ATE524829T1 - Halbleiterbauelement zur multi-spektralen detektion von strahlung und verwendung des halbleiterbauelements - Google Patents

Halbleiterbauelement zur multi-spektralen detektion von strahlung und verwendung des halbleiterbauelements

Info

Publication number
ATE524829T1
ATE524829T1 AT05300994T AT05300994T ATE524829T1 AT E524829 T1 ATE524829 T1 AT E524829T1 AT 05300994 T AT05300994 T AT 05300994T AT 05300994 T AT05300994 T AT 05300994T AT E524829 T1 ATE524829 T1 AT E524829T1
Authority
AT
Austria
Prior art keywords
layer
semiconductor component
layers
doping
type
Prior art date
Application number
AT05300994T
Other languages
English (en)
Inventor
Johan Rothman
Original Assignee
Commissariat Energie Atomique
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat Energie Atomique filed Critical Commissariat Energie Atomique
Application granted granted Critical
Publication of ATE524829T1 publication Critical patent/ATE524829T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/109—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN heterojunction type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PIN type

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Light Receiving Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)
AT05300994T 2004-12-17 2005-12-02 Halbleiterbauelement zur multi-spektralen detektion von strahlung und verwendung des halbleiterbauelements ATE524829T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0453034A FR2879818B1 (fr) 2004-12-17 2004-12-17 Photodetecteur a semi-conducteur, dispositif de detection multi-spectrale d'un rayonnement electromagnetique mettant en oeuvre un tel photodetecteur, et procede de mise en oeuvre d'un tel dispositif

Publications (1)

Publication Number Publication Date
ATE524829T1 true ATE524829T1 (de) 2011-09-15

Family

ID=34954152

Family Applications (1)

Application Number Title Priority Date Filing Date
AT05300994T ATE524829T1 (de) 2004-12-17 2005-12-02 Halbleiterbauelement zur multi-spektralen detektion von strahlung und verwendung des halbleiterbauelements

Country Status (4)

Country Link
US (1) US7619240B2 (de)
EP (1) EP1672696B1 (de)
AT (1) ATE524829T1 (de)
FR (1) FR2879818B1 (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100012849A1 (en) * 2008-07-21 2010-01-21 United States Of America As Represented By The Administrator Of The National Aeronautics And Spac Detector for dual band ultraviolet detection
FR2941564B1 (fr) * 2009-01-29 2011-07-01 Commissariat Energie Atomique Photodiode et detecteur de rayonnement electromagnetique
KR101605424B1 (ko) 2010-03-19 2016-03-22 인비사지 테크놀로지스, 인크. 감지성 반도체 다이오드를 채용한 이미지 센서

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU7731575A (en) * 1974-01-18 1976-07-15 Nat Patent Dev Corp Heterojunction devices
US4390889A (en) * 1980-10-09 1983-06-28 Bell Telephone Laboratories, Incorporated Photodiode having an InGaAs layer with an adjacent InGaAsP p-n junction
GB8828348D0 (en) * 1988-12-05 1989-01-05 Secr Defence Photodetector
US5113076A (en) 1989-12-19 1992-05-12 Santa Barbara Research Center Two terminal multi-band infrared radiation detector
US5650635A (en) * 1995-07-14 1997-07-22 Northwestern University Multiple stacked Sb-based heterostructures
US5627112A (en) * 1995-11-13 1997-05-06 Rockwell International Corporation Method of making suspended microstructures
US5731621A (en) * 1996-03-19 1998-03-24 Santa Barbara Research Center Three band and four band multispectral structures having two simultaneous signal outputs
US6034407A (en) 1998-07-31 2000-03-07 Boeing North American, Inc. Multi-spectral planar photodiode infrared radiation detector pixels
DE10037103A1 (de) * 2000-07-27 2002-02-14 Aeg Infrarot Module Gmbh Multispektrale Photodiode
US7045833B2 (en) * 2000-09-29 2006-05-16 Board Of Regents, The University Of Texas System Avalanche photodiodes with an impact-ionization-engineered multiplication region
GB0030204D0 (en) * 2000-12-12 2001-01-24 Secr Defence Reduced noise semiconductor photodetector
US6803557B1 (en) * 2002-09-27 2004-10-12 Raytheon Company Photodiode having voltage tunable spectral response
US6831309B2 (en) * 2002-12-18 2004-12-14 Agilent Technologies, Inc. Unipolar photodiode having a schottky junction contact

Also Published As

Publication number Publication date
EP1672696A1 (de) 2006-06-21
EP1672696B1 (de) 2011-09-14
US7619240B2 (en) 2009-11-17
FR2879818B1 (fr) 2007-04-20
FR2879818A1 (fr) 2006-06-23
US20060131579A1 (en) 2006-06-22

Similar Documents

Publication Publication Date Title
IL174844A0 (en) A unipolar semiconductor photodetector with suppressed dark current and method for producting the same
TW200614528A (en) Multijunction solar cell having a lattice-mismatched griii-grv-x layer and a composition-graded buffer layer
WO2012042452A3 (en) Wavelength converted light emitting device
TW200703632A (en) Photoelectric conversion device and manufacturing method thereof
ATE434835T1 (de) Halbleiterphotodiode und herstellungsverfahren dafür
WO2013006703A3 (en) Power mosfet with integrated gate resistor and diode-connected mosfet
DE602004017612D1 (de) Verarmungszonelose photodiode mit unterdrücktem photostrom
WO2009037121A8 (de) Organischer photodetektor zur detektion infraroter strahlung, verfahren zur herstellung dazu und verwendung
TW200705714A (en) Semiconductor light emitting circuits including light emitting diodes and four layer semiconductor shunt devices
TW200707613A (en) Damage evaluation method of compound semiconductor member, production method of compound semiconductor member, gallium nitride compound semiconductor member, and gallium nitride compound semiconductor membrane
WO2011129856A3 (en) Transparent silicon detector and multimode seeker using the detector
FR2954853B1 (fr) Photodetecteur a structure plasmon
ATE524829T1 (de) Halbleiterbauelement zur multi-spektralen detektion von strahlung und verwendung des halbleiterbauelements
ATE438200T1 (de) Mehrfarben-photonendetektor
US8901678B2 (en) Light-assisted biochemical sensor
WO2008029161A3 (en) Photovoltaic devices
WO2009041631A1 (ja) ＺｎＯ系半導体及びＺｎＯ系半導体素子
Dyakonova et al. Low frequency noise in p-InAsSbP/n-InAs infrared photodiodes
WO2002029904A1 (fr) Systeme optique de reception et dispositif optique a semiconducteur equipe de ce dernier
Yang et al. Polarization engineering of back-illuminated separate absorption and multiplication AlGaN avalanche photodiodes
Gao Investigation of back-illuminated AlGaN avalanche photodiodes with p-type graded Al _ x Ga _ 1-x N Al x Ga 1-x N layer
WO2005045884A3 (en) Optical amplification in semiconductors
Wang et al. GaN-Based Very Narrow Band-Pass pin Ultraviolet A Photodetectors
Bai et al. Design and simulation of 4H-SiC MESFET ultraviolet photodetector with gain
Wang et al. Study of monolithic integrated solar blind GaN-based photodetectors

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties