ATE511212T1 - CIRCUIT ARRANGEMENT - Google Patents

CIRCUIT ARRANGEMENT

Info

Publication number
ATE511212T1
ATE511212T1 AT01130144T AT01130144T ATE511212T1 AT E511212 T1 ATE511212 T1 AT E511212T1 AT 01130144 T AT01130144 T AT 01130144T AT 01130144 T AT01130144 T AT 01130144T AT E511212 T1 ATE511212 T1 AT E511212T1
Authority
AT
Austria
Prior art keywords
terminals
circuit arrangement
negative
positive
circuit board
Prior art date
Application number
AT01130144T
Other languages
German (de)
Inventor
Christian Goebl
Juergen Steger
Paul Mourick
Peter Beckedahl
Werner Tursky
Original Assignee
Semikron Elektronik Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE10141114A external-priority patent/DE10141114C1/en
Application filed by Semikron Elektronik Gmbh filed Critical Semikron Elektronik Gmbh
Application granted granted Critical
Publication of ATE511212T1 publication Critical patent/ATE511212T1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H01L25/162—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits the devices being mounted on two or more different substrates
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    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • H01L2224/0601—Structure
    • H01L2224/0603—Bonding areas having different sizes, e.g. different heights or widths
    • H—ELECTRICITY
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
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    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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    • H01L2224/4846—Connecting portions with multiple bonds on the same bonding area
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    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
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    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
    • H01L2224/49111—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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    • H01L2224/491—Disposition
    • H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
    • H01L2224/49113—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting different bonding areas on the semiconductor or solid-state body to a common bonding area outside the body, e.g. converging wires
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49175—Parallel arrangements
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    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367—Cooling facilitated by shape of device
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    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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    • H01L2924/1305—Bipolar Junction Transistor [BJT]
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    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
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    • H01L2924/14—Integrated circuits
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    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19041—Component type being a capacitor
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    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19043—Component type being a resistor
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    • H01L2924/30—Technical effects
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    • H01L2924/30107—Inductance

Abstract

The circuit device (10) has a base body (12), incorporating at least one substrate (16) provided with electrical and/or electronic components connected to conductor paths, an intermediate circuit board (24) with at least one capacitor connected between positive and negative DC terminals (46,48), a clamping device and a driver circuit. The positive and negative DC terminals and AC terminals (20) of the intermediate circuit board each have contact elements for connection with the substrate conductor paths.
AT01130144T 2001-06-08 2001-12-19 CIRCUIT ARRANGEMENT ATE511212T1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10127947A DE10127947C1 (en) 2001-08-22 2001-06-08 Circuit device for power semiconductor module has intermediate circuit board with DC and AC terminals coupled to conductor paths of substrate incorporated in base body
DE10141114A DE10141114C1 (en) 2001-06-08 2001-08-22 Circuit device has AC terminal element of circuit substrate cooled via terminal pin of base body thermally connected to heat sink

Publications (1)

Publication Number Publication Date
ATE511212T1 true ATE511212T1 (en) 2011-06-15

Family

ID=7696231

Family Applications (1)

Application Number Title Priority Date Filing Date
AT01130144T ATE511212T1 (en) 2001-06-08 2001-12-19 CIRCUIT ARRANGEMENT

Country Status (2)

Country Link
AT (1) ATE511212T1 (en)
DE (1) DE10127947C1 (en)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10134187B4 (en) * 2001-07-13 2006-09-14 Semikron Elektronik Gmbh & Co. Kg Cooling device for semiconductor modules
DE10159119B4 (en) * 2001-12-01 2005-02-17 Semikron Elektronik Gmbh Inverter in pressure contact
DE102005036105B3 (en) 2005-08-01 2006-11-16 Semikron Elektronik Gmbh & Co. Kg Electrical component e.g. insulated gate bipolar transistor module, has knob projecting from base surface of bus bar, and fastening unit provided for fixed connection contacting of external bus bar unit to contact surface of knob
DE102006006424B4 (en) * 2006-02-13 2011-11-17 Semikron Elektronik Gmbh & Co. Kg Arrangement with at least one power semiconductor module and a cooling component and associated manufacturing method
DE102006006425B4 (en) * 2006-02-13 2009-06-10 Semikron Elektronik Gmbh & Co. Kg Power semiconductor module in pressure contact design
DE102006006423B4 (en) 2006-02-13 2009-06-10 Semikron Elektronik Gmbh & Co. Kg Power semiconductor module and associated manufacturing method
DE102006027481C5 (en) * 2006-06-14 2012-11-08 Semikron Elektronik Gmbh & Co. Kg Power semiconductor module with mutually electrically insulated connection elements
DE102007007224B4 (en) 2007-02-14 2009-06-10 Semikron Elektronik Gmbh & Co. Kg Power semiconductor module with a housing
DE102007026768A1 (en) 2007-06-09 2008-12-11 Semikron Elektronik Gmbh & Co. Kg Pressure-contacted three-phase converter module
DE102007054709B4 (en) 2007-11-16 2014-11-13 Semikron Elektronik Gmbh & Co. Kg Power semiconductor module with a substrate and with a printing device
DE102008014112A1 (en) 2008-03-13 2009-10-01 Semikron Elektronik Gmbh & Co. Kg Power semiconductor module for use on cooling component, has contact elements with contact section exhibiting deformation turned away from other contact section and forming contact surface for contacting with paths
DE102008014113B4 (en) 2008-03-13 2014-04-03 Semikron Elektronik Gmbh & Co. Kg Power semiconductor module in pressure contact design
DE102008018793B3 (en) * 2008-04-15 2009-11-12 Semikron Elektronik Gmbh & Co. Kg Arrangement in pressure contact design with a power semiconductor module
DE102009024369B4 (en) 2009-06-09 2011-12-29 Semikron Elektronik Gmbh & Co. Kg Power electronic system
DE102011076325B4 (en) * 2011-05-24 2016-05-04 Semikron Elektronik Gmbh & Co. Kg Cooling arrangement for a power electronic component with subsystems and a cooling device
DE102011076324B4 (en) * 2011-05-24 2014-04-10 Semikron Elektronik Gmbh & Co. Kg Power electronic system with connection means of first and second subsystems
DE102011076323B4 (en) 2011-05-24 2014-04-10 Semikron Elektronik Gmbh & Co. Kg Power electronic system with first and second subsystem
DE102017129707A1 (en) 2017-12-13 2019-06-13 Semikron Elektronik Gmbh & Co. Kg Method for producing a power electronic system
DE102019115498B4 (en) * 2019-06-07 2022-06-02 Semikron Elektronik Gmbh & Co. Kg Power electronic submodule with direct and alternating potential connection areas and arrangement herewith

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19522173C1 (en) * 1995-06-19 1996-10-17 Eupec Gmbh & Co Kg Power semiconductor module
DE10037533C1 (en) * 2000-08-01 2002-01-31 Semikron Elektronik Gmbh Low-inductance circuit arrangement

Also Published As

Publication number Publication date
DE10127947C1 (en) 2002-10-17

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