ATE484074T1 - Halbleitervorrichtung und verfahren zu deren herstellung - Google Patents
Halbleitervorrichtung und verfahren zu deren herstellungInfo
- Publication number
- ATE484074T1 ATE484074T1 AT05759736T AT05759736T ATE484074T1 AT E484074 T1 ATE484074 T1 AT E484074T1 AT 05759736 T AT05759736 T AT 05759736T AT 05759736 T AT05759736 T AT 05759736T AT E484074 T1 ATE484074 T1 AT E484074T1
- Authority
- AT
- Austria
- Prior art keywords
- emitter
- conductivity type
- semiconductor body
- region
- semiconductor device
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title abstract 6
- 239000002070 nanowire Substances 0.000 abstract 2
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0804—Emitter regions of bipolar transistors
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
- H01L29/0665—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body the shape of the body defining a nanostructure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
- H01L29/0665—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body the shape of the body defining a nanostructure
- H01L29/0669—Nanowires or nanotubes
- H01L29/0673—Nanowires or nanotubes oriented parallel to a substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
- H01L29/0665—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body the shape of the body defining a nanostructure
- H01L29/0669—Nanowires or nanotubes
- H01L29/0676—Nanowires or nanotubes oriented perpendicular or at an angle to a substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0821—Collector regions of bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/737—Hetero-junction transistors
- H01L29/7371—Vertical transistors
- H01L29/7378—Vertical transistors comprising lattice mismatched active layers, e.g. SiGe strained layer transistors
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/902—Specified use of nanostructure
- Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
- Y10S977/936—Specified use of nanostructure for electronic or optoelectronic application in a transistor or 3-terminal device
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP04103458 | 2004-07-20 | ||
PCT/IB2005/052263 WO2006011069A1 (en) | 2004-07-20 | 2005-07-07 | Semiconductor device and method of manufacturing the same |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE484074T1 true ATE484074T1 (de) | 2010-10-15 |
Family
ID=34972658
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT05759736T ATE484074T1 (de) | 2004-07-20 | 2005-07-07 | Halbleitervorrichtung und verfahren zu deren herstellung |
Country Status (9)
Country | Link |
---|---|
US (1) | US7915709B2 (de) |
EP (1) | EP1771884B1 (de) |
JP (1) | JP2008507837A (de) |
KR (1) | KR20070026826A (de) |
CN (2) | CN100521229C (de) |
AT (1) | ATE484074T1 (de) |
DE (1) | DE602005024001D1 (de) |
TW (1) | TW200618284A (de) |
WO (1) | WO2006011069A1 (de) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7645701B2 (en) * | 2007-05-21 | 2010-01-12 | International Business Machines Corporation | Silicon-on-insulator structures for through via in silicon carriers |
US7868426B2 (en) * | 2007-07-26 | 2011-01-11 | University Of Delaware | Method of fabricating monolithic nanoscale probes |
CN104835817B (zh) * | 2014-02-08 | 2018-03-30 | 中芯国际集成电路制造(上海)有限公司 | 一种半导体器件及其制造方法 |
US10332972B2 (en) * | 2017-11-20 | 2019-06-25 | International Business Machines Corporation | Single column compound semiconductor bipolar junction transistor fabricated on III-V compound semiconductor surface |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE69107779T2 (de) * | 1990-10-31 | 1995-09-21 | Ibm | Transistor mit selbstjustierender epitaxialer Basis und dessen Herstellungsverfahren. |
JP2731089B2 (ja) * | 1991-10-02 | 1998-03-25 | 三菱電機株式会社 | 高速動作半導体装置およびその製造方法 |
US6559468B1 (en) * | 1999-03-29 | 2003-05-06 | Hewlett-Packard Development Company Lp | Molecular wire transistor (MWT) |
JP4932981B2 (ja) * | 2000-01-11 | 2012-05-16 | ルネサスエレクトロニクス株式会社 | バイポーラトランジスタおよびその製造方法 |
EP2360298A3 (de) * | 2000-08-22 | 2011-10-05 | President and Fellows of Harvard College | Verfahren zur Abscheidung eines halbleitenden Nanodrahtes |
TW554388B (en) * | 2001-03-30 | 2003-09-21 | Univ California | Methods of fabricating nanostructures and nanowires and devices fabricated therefrom |
US6656811B2 (en) * | 2001-12-21 | 2003-12-02 | Texas Instruments Incorporated | Carbide emitter mask etch stop |
US7335908B2 (en) * | 2002-07-08 | 2008-02-26 | Qunano Ab | Nanostructures and methods for manufacturing the same |
DE10250830B4 (de) * | 2002-10-31 | 2015-02-26 | Qimonda Ag | Verfahren zum Herstellung eines Schaltkreis-Arrays |
US20070108435A1 (en) * | 2005-02-07 | 2007-05-17 | Harmon Eric S | Method of making nanowires |
-
2005
- 2005-07-07 AT AT05759736T patent/ATE484074T1/de not_active IP Right Cessation
- 2005-07-07 CN CNB2005800244221A patent/CN100521229C/zh active Active
- 2005-07-07 KR KR1020077001236A patent/KR20070026826A/ko not_active Application Discontinuation
- 2005-07-07 CN CNB2005800243816A patent/CN100505298C/zh not_active Expired - Fee Related
- 2005-07-07 DE DE602005024001T patent/DE602005024001D1/de active Active
- 2005-07-07 JP JP2007522075A patent/JP2008507837A/ja not_active Withdrawn
- 2005-07-07 US US11/658,228 patent/US7915709B2/en not_active Expired - Fee Related
- 2005-07-07 WO PCT/IB2005/052263 patent/WO2006011069A1/en active Application Filing
- 2005-07-07 EP EP05759736A patent/EP1771884B1/de active Active
- 2005-07-15 TW TW094124196A patent/TW200618284A/zh unknown
Also Published As
Publication number | Publication date |
---|---|
CN101015067A (zh) | 2007-08-08 |
US20090200641A1 (en) | 2009-08-13 |
EP1771884A1 (de) | 2007-04-11 |
US7915709B2 (en) | 2011-03-29 |
CN100521229C (zh) | 2009-07-29 |
CN1989621A (zh) | 2007-06-27 |
JP2008507837A (ja) | 2008-03-13 |
TW200618284A (en) | 2006-06-01 |
DE602005024001D1 (de) | 2010-11-18 |
KR20070026826A (ko) | 2007-03-08 |
WO2006011069A1 (en) | 2006-02-02 |
CN100505298C (zh) | 2009-06-24 |
EP1771884B1 (de) | 2010-10-06 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |