ATE475196T1 - Verfahren zum thermischen abgleichen eines elektrischen widerstandes in zwei richtungen - Google Patents

Verfahren zum thermischen abgleichen eines elektrischen widerstandes in zwei richtungen

Info

Publication number
ATE475196T1
ATE475196T1 AT04760183T AT04760183T ATE475196T1 AT E475196 T1 ATE475196 T1 AT E475196T1 AT 04760183 T AT04760183 T AT 04760183T AT 04760183 T AT04760183 T AT 04760183T AT E475196 T1 ATE475196 T1 AT E475196T1
Authority
AT
Austria
Prior art keywords
pulses
trimming
directions
parameters
electrical resistance
Prior art date
Application number
AT04760183T
Other languages
English (en)
Inventor
Oleg Grudin
Leslie Landsberger
Gennadiy Frolov
Original Assignee
Microbridge Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Microbridge Technologies Inc filed Critical Microbridge Technologies Inc
Application granted granted Critical
Publication of ATE475196T1 publication Critical patent/ATE475196T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/40—Resistors
    • H10D1/47—Resistors having no potential barriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
    • H01C17/22—Apparatus or processes specially adapted for manufacturing resistors adapted for trimming
    • H01C17/26—Apparatus or processes specially adapted for manufacturing resistors adapted for trimming by converting resistive material
    • H01C17/265—Apparatus or processes specially adapted for manufacturing resistors adapted for trimming by converting resistive material by chemical or thermal treatment, e.g. oxydation, reduction, annealing
    • H01C17/267—Apparatus or processes specially adapted for manufacturing resistors adapted for trimming by converting resistive material by chemical or thermal treatment, e.g. oxydation, reduction, annealing by passage of voltage pulses or electric current
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
    • H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
    • H10D84/209—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only resistors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49082—Resistor making
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49082—Resistor making
    • Y10T29/49085—Thermally variable

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Apparatuses And Processes For Manufacturing Resistors (AREA)
  • Measurement Of Resistance Or Impedance (AREA)
  • Investigating Or Analyzing Materials Using Thermal Means (AREA)
  • Measuring Volume Flow (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Non-Adjustable Resistors (AREA)
AT04760183T 2003-03-20 2004-03-19 Verfahren zum thermischen abgleichen eines elektrischen widerstandes in zwei richtungen ATE475196T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US45588703P 2003-03-20 2003-03-20
PCT/CA2004/000398 WO2004097859A2 (en) 2003-03-20 2004-03-19 Bidirectional thermal trimming of electrical resistance

Publications (1)

Publication Number Publication Date
ATE475196T1 true ATE475196T1 (de) 2010-08-15

Family

ID=33418072

Family Applications (1)

Application Number Title Priority Date Filing Date
AT04760183T ATE475196T1 (de) 2003-03-20 2004-03-19 Verfahren zum thermischen abgleichen eines elektrischen widerstandes in zwei richtungen

Country Status (8)

Country Link
US (2) US7667156B2 (de)
EP (1) EP1609185B1 (de)
JP (1) JP2006520532A (de)
AT (1) ATE475196T1 (de)
CA (1) CA2519690A1 (de)
DE (1) DE602004028225D1 (de)
TW (1) TW200506974A (de)
WO (1) WO2004097859A2 (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7714694B2 (en) 2004-09-21 2010-05-11 Microbridge Technologies Canada, Inc. Compensating for linear and non-linear trimming-induced shift of temperature coefficient of resistance
WO2009111890A1 (en) * 2008-03-14 2009-09-17 Microbridge Technologies Inc. A method of stabilizing thermal resistors
US8940598B2 (en) * 2010-11-03 2015-01-27 Texas Instruments Incorporated Low temperature coefficient resistor in CMOS flow
US8723637B2 (en) 2012-04-10 2014-05-13 Analog Devices, Inc. Method for altering electrical and thermal properties of resistive materials
JP6073705B2 (ja) * 2013-02-26 2017-02-01 エスアイアイ・セミコンダクタ株式会社 ヒューズ回路及び半導体集積回路装置
US9570538B2 (en) 2014-03-19 2017-02-14 International Business Machines Corporation Methods of manufacturing polyresistors with selected TCR
US20150302957A1 (en) * 2014-04-18 2015-10-22 Ohmite Manufacturing Co. Method of laser trimming at low and high temperatures

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2639246A (en) * 1951-11-29 1953-05-19 Gen Electric Method for stabilizing semiconductor material
US3723257A (en) * 1970-03-30 1973-03-27 Western Electric Co Methods and apparatus for trimming thin-film devices to value by means of a computer-controlled anodization process
US3649801A (en) * 1970-04-29 1972-03-14 Gen Electric Film resistor trimmer
US3916142A (en) * 1973-03-29 1975-10-28 Gte Automatic Electric Lab Inc Method of static trimming of film deposited resistors
US4782202A (en) * 1986-12-29 1988-11-01 Mitsubishi Denki Kabushiki Kaisha Method and apparatus for resistance adjustment of thick film thermal print heads
GB2258356B (en) * 1991-07-31 1995-02-22 Metron Designs Ltd Method and apparatus for conditioning an electronic component having a characteristic subject to variation with temperature
US5466484A (en) * 1993-09-29 1995-11-14 Motorola, Inc. Resistor structure and method of setting a resistance value
JPH08224879A (ja) * 1994-12-19 1996-09-03 Xerox Corp 液滴エジェクタ閾値調整方法
US5679275A (en) * 1995-07-03 1997-10-21 Motorola, Inc. Circuit and method of modifying characteristics of a utilization circuit
US6306718B1 (en) * 2000-04-26 2001-10-23 Dallas Semiconductor Corporation Method of making polysilicon resistor having adjustable temperature coefficients
US6958523B2 (en) * 2000-09-15 2005-10-25 Texas Instruments Incorporated On chip heating for electrical trimming of polysilicon and polysilicon-silicon-germanium resistors and electrically programmable fuses for integrated circuits
CA2459902A1 (en) * 2001-09-10 2003-03-20 Microbridge Technologies Inc. Method for trimming resistors
US6911361B2 (en) * 2003-03-10 2005-06-28 Sharp Laboratories Of America, Inc. Low temperature processing of PCMO thin film on Ir substrate for RRAM application
EP1606830A1 (de) * 2003-03-20 2005-12-21 Microbridge Technologies Inc. Trimmen des temperaturkoeffizienten von elektronischen bauelementen und schaltungen
EP1649496B1 (de) * 2003-07-14 2007-04-25 Microbrige Technologies Inc. Einstellung analoger elektrischer schaltungsausgangssignale

Also Published As

Publication number Publication date
EP1609185B1 (de) 2010-07-21
DE602004028225D1 (de) 2010-09-02
US7667156B2 (en) 2010-02-23
TW200506974A (en) 2005-02-16
WO2004097859A2 (en) 2004-11-11
US20100101077A1 (en) 2010-04-29
WO2004097859A3 (en) 2004-12-29
JP2006520532A (ja) 2006-09-07
US20070034608A1 (en) 2007-02-15
EP1609185A2 (de) 2005-12-28
CA2519690A1 (en) 2004-11-11

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