ATE431002T1 - Halbleiterlaser mit einem sättigbaren bragg- refektorspiegel - Google Patents
Halbleiterlaser mit einem sättigbaren bragg- refektorspiegelInfo
- Publication number
- ATE431002T1 ATE431002T1 AT00943033T AT00943033T ATE431002T1 AT E431002 T1 ATE431002 T1 AT E431002T1 AT 00943033 T AT00943033 T AT 00943033T AT 00943033 T AT00943033 T AT 00943033T AT E431002 T1 ATE431002 T1 AT E431002T1
- Authority
- AT
- Austria
- Prior art keywords
- refector
- mirror
- semiconductor laser
- saturable bragg
- mode
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/11—Mode locking; Q-switching; Other giant-pulse techniques, e.g. cavity dumping
- H01S3/1106—Mode locking
- H01S3/1112—Passive mode locking
- H01S3/1115—Passive mode locking using intracavity saturable absorbers
- H01S3/1118—Semiconductor saturable absorbers, e.g. semiconductor saturable absorber mirrors [SESAMs]; Solid-state saturable absorbers, e.g. carbon nanotube [CNT] based
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/0601—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium comprising an absorbing region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/065—Mode locking; Mode suppression; Mode selection ; Self pulsating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/14—External cavity lasers
- H01S5/141—External cavity lasers using a wavelength selective device, e.g. a grating or etalon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
- H01S5/0265—Intensity modulators
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
- H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
- H01S5/06253—Pulse modulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/065—Mode locking; Mode suppression; Mode selection ; Self pulsating
- H01S5/0657—Mode locking, i.e. generation of pulses at a frequency corresponding to a roundtrip in the cavity
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1028—Coupling to elements in the cavity, e.g. coupling to waveguides adjacent the active region, e.g. forward coupled [DFC] structures
- H01S5/1032—Coupling to elements comprising an optical axis that is not aligned with the optical axis of the active region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
- H01S5/1206—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers having a non constant or multiplicity of periods
- H01S5/1212—Chirped grating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2004—Confining in the direction perpendicular to the layer structure
- H01S5/2018—Optical confinement, e.g. absorbing-, reflecting- or waveguide-layers
- H01S5/2022—Absorbing region or layer parallel to the active layer, e.g. to influence transverse modes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2004—Confining in the direction perpendicular to the layer structure
- H01S5/2018—Optical confinement, e.g. absorbing-, reflecting- or waveguide-layers
- H01S5/2027—Reflecting region or layer, parallel to the active layer, e.g. to modify propagation of the mode in the laser or to influence transverse modes
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Nanotechnology (AREA)
- Plasma & Fusion (AREA)
- Lasers (AREA)
- Semiconductor Lasers (AREA)
- Optical Elements Other Than Lenses (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/338,458 US6449301B1 (en) | 1999-06-22 | 1999-06-22 | Method and apparatus for mode locking of external cavity semiconductor lasers with saturable Bragg reflectors |
PCT/US2000/017127 WO2000079657A1 (en) | 1999-06-22 | 2000-06-21 | A semiconductor laser having a reflecting mirror which comprises a saturable bragg reflector |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE431002T1 true ATE431002T1 (de) | 2009-05-15 |
Family
ID=23324892
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT00943033T ATE431002T1 (de) | 1999-06-22 | 2000-06-21 | Halbleiterlaser mit einem sättigbaren bragg- refektorspiegel |
Country Status (6)
Country | Link |
---|---|
US (1) | US6449301B1 (de) |
EP (1) | EP1188207B1 (de) |
JP (1) | JP2003521106A (de) |
AT (1) | ATE431002T1 (de) |
DE (1) | DE60042157D1 (de) |
WO (1) | WO2000079657A1 (de) |
Families Citing this family (59)
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US20060241574A1 (en) * | 1995-08-31 | 2006-10-26 | Rizoiu Ioana M | Electromagnetic energy distributions for electromagnetically induced disruptive cutting |
US20090143775A1 (en) * | 1995-08-31 | 2009-06-04 | Rizoiu Ioana M | Medical laser having controlled-temperature and sterilized fluid output |
US6288499B1 (en) * | 1997-06-12 | 2001-09-11 | Biolase Technology, Inc. | Electromagnetic energy distributions for electromagnetically induced mechanical cutting |
US7320594B1 (en) * | 1995-08-31 | 2008-01-22 | Biolase Technology, Inc. | Fluid and laser system |
US20060240381A1 (en) | 1995-08-31 | 2006-10-26 | Biolase Technology, Inc. | Fluid conditioning system |
US20050281887A1 (en) * | 1995-08-31 | 2005-12-22 | Rizoiu Ioana M | Fluid conditioning system |
US20100125291A1 (en) * | 1995-08-31 | 2010-05-20 | Rizoiu Ioana M | Drill and flavored fluid particles combination |
US6393035B1 (en) * | 1999-02-01 | 2002-05-21 | Gigatera Ag | High-repetition rate passively mode-locked solid-state laser |
US6647046B1 (en) * | 1999-11-23 | 2003-11-11 | Corning Lasertron, Inc. | Mode-selective facet layer for pump laser |
US6885683B1 (en) | 2000-05-23 | 2005-04-26 | Imra America, Inc. | Modular, high energy, widely-tunable ultrafast fiber source |
US20080157690A1 (en) * | 2001-05-02 | 2008-07-03 | Biolase Technology, Inc. | Electromagnetic energy distributions for electromagnetically induced mechanical cutting |
US20020176473A1 (en) * | 2001-05-23 | 2002-11-28 | Aram Mooradian | Wavelength selectable, controlled chirp, semiconductor laser |
JP2003090792A (ja) * | 2001-09-20 | 2003-03-28 | Fuji Photo Film Co Ltd | 光断層画像化装置 |
EP1517415A1 (de) | 2003-09-18 | 2005-03-23 | Leica Geosystems AG | Geodätisches Gerät mit einer Laserquelle |
US20100151406A1 (en) * | 2004-01-08 | 2010-06-17 | Dmitri Boutoussov | Fluid conditioning system |
WO2005094275A2 (en) | 2004-03-25 | 2005-10-13 | Imra America, Inc. | Optical parametric amplification, optical parametric generation, and optical pumping in optical fibers systems |
JP2008508034A (ja) * | 2004-07-27 | 2008-03-21 | バイオレーズ テクノロジー インコーポレイテッド | 触覚的フィードバックの先端部フェルールを有するコントラ・アングル回転型のハンドピース |
US7970030B2 (en) * | 2004-07-27 | 2011-06-28 | Biolase Technology, Inc. | Dual pulse-width medical laser with presets |
JP2006053690A (ja) * | 2004-08-10 | 2006-02-23 | Ricoh Co Ltd | 画像処理装置、画像処理方法、画像処理プログラムおよび記録媒体 |
EP1782511B1 (de) * | 2004-08-13 | 2015-04-29 | Biolase, Inc. | Medizinischer dualimpulsbreitenlaser mit voreinstellungen |
WO2014079478A1 (en) | 2012-11-20 | 2014-05-30 | Light In Light Srl | High speed laser processing of transparent materials |
US8724666B1 (en) * | 2013-01-04 | 2014-05-13 | Alcon Lensx, Inc. | Self starting mode-locked laser oscillator |
EP2754524B1 (de) | 2013-01-15 | 2015-11-25 | Corning Laser Technologies GmbH | Verfahren und Vorrichtung zum laserbasierten Bearbeiten von flächigen Substraten, d.h. Wafer oder Glaselement, unter Verwendung einer Laserstrahlbrennlinie |
US9701564B2 (en) | 2013-01-15 | 2017-07-11 | Corning Incorporated | Systems and methods of glass cutting by inducing pulsed laser perforations into glass articles |
EP2781296B1 (de) | 2013-03-21 | 2020-10-21 | Corning Laser Technologies GmbH | Vorrichtung und verfahren zum ausschneiden von konturen aus flächigen substraten mittels laser |
US9701563B2 (en) | 2013-12-17 | 2017-07-11 | Corning Incorporated | Laser cut composite glass article and method of cutting |
US9815730B2 (en) | 2013-12-17 | 2017-11-14 | Corning Incorporated | Processing 3D shaped transparent brittle substrate |
US9850160B2 (en) | 2013-12-17 | 2017-12-26 | Corning Incorporated | Laser cutting of display glass compositions |
US20150165560A1 (en) | 2013-12-17 | 2015-06-18 | Corning Incorporated | Laser processing of slots and holes |
US11556039B2 (en) | 2013-12-17 | 2023-01-17 | Corning Incorporated | Electrochromic coated glass articles and methods for laser processing the same |
US9687936B2 (en) | 2013-12-17 | 2017-06-27 | Corning Incorporated | Transparent material cutting with ultrafast laser and beam optics |
US9517963B2 (en) | 2013-12-17 | 2016-12-13 | Corning Incorporated | Method for rapid laser drilling of holes in glass and products made therefrom |
US10442719B2 (en) | 2013-12-17 | 2019-10-15 | Corning Incorporated | Edge chamfering methods |
US9676167B2 (en) | 2013-12-17 | 2017-06-13 | Corning Incorporated | Laser processing of sapphire substrate and related applications |
EP3166895B1 (de) | 2014-07-08 | 2021-11-24 | Corning Incorporated | Verfahren und vorrichtung zur laserbearbeitung von materialien |
JP6788571B2 (ja) | 2014-07-14 | 2020-11-25 | コーニング インコーポレイテッド | 界面ブロック、そのような界面ブロックを使用する、ある波長範囲内で透過する基板を切断するためのシステムおよび方法 |
US9617180B2 (en) | 2014-07-14 | 2017-04-11 | Corning Incorporated | Methods and apparatuses for fabricating glass articles |
EP3169635B1 (de) | 2014-07-14 | 2022-11-23 | Corning Incorporated | Verfahren und system zur herstellung von perforationen |
WO2016010943A2 (en) | 2014-07-14 | 2016-01-21 | Corning Incorporated | Method and system for arresting crack propagation |
KR20170028943A (ko) * | 2014-07-14 | 2017-03-14 | 코닝 인코포레이티드 | 조정가능한 레이저 빔 촛점 라인을 사용하여 투명한 재료를 처리하는 방법 및 시스템 |
US10047001B2 (en) | 2014-12-04 | 2018-08-14 | Corning Incorporated | Glass cutting systems and methods using non-diffracting laser beams |
WO2016115017A1 (en) | 2015-01-12 | 2016-07-21 | Corning Incorporated | Laser cutting of thermally tempered substrates using the multi photon absorption method |
EP3274306B1 (de) | 2015-03-24 | 2021-04-14 | Corning Incorporated | Laserschneiden und verarbeiten von anzeigeglaszusammensetzungen |
WO2016160391A1 (en) | 2015-03-27 | 2016-10-06 | Corning Incorporated | Gas permeable window and method of fabricating the same |
US11186060B2 (en) | 2015-07-10 | 2021-11-30 | Corning Incorporated | Methods of continuous fabrication of holes in flexible substrate sheets and products relating to the same |
MY194570A (en) | 2016-05-06 | 2022-12-02 | Corning Inc | Laser cutting and removal of contoured shapes from transparent substrates |
US10410883B2 (en) | 2016-06-01 | 2019-09-10 | Corning Incorporated | Articles and methods of forming vias in substrates |
US10794679B2 (en) | 2016-06-29 | 2020-10-06 | Corning Incorporated | Method and system for measuring geometric parameters of through holes |
JP7090594B2 (ja) | 2016-07-29 | 2022-06-24 | コーニング インコーポレイテッド | レーザ加工するための装置および方法 |
EP3507057A1 (de) | 2016-08-30 | 2019-07-10 | Corning Incorporated | Laserbearbeitung von transparenten materialien |
KR102078294B1 (ko) | 2016-09-30 | 2020-02-17 | 코닝 인코포레이티드 | 비-축대칭 빔 스폿을 이용하여 투명 워크피스를 레이저 가공하기 위한 기기 및 방법 |
WO2018081031A1 (en) | 2016-10-24 | 2018-05-03 | Corning Incorporated | Substrate processing station for laser-based machining of sheet-like glass substrates |
US10752534B2 (en) | 2016-11-01 | 2020-08-25 | Corning Incorporated | Apparatuses and methods for laser processing laminate workpiece stacks |
US10688599B2 (en) | 2017-02-09 | 2020-06-23 | Corning Incorporated | Apparatus and methods for laser processing transparent workpieces using phase shifted focal lines |
WO2018205087A1 (zh) * | 2017-05-08 | 2018-11-15 | 深圳大学 | 一种异质结可饱和吸收镜及其制备方法、脉冲光纤激光器 |
US10580725B2 (en) | 2017-05-25 | 2020-03-03 | Corning Incorporated | Articles having vias with geometry attributes and methods for fabricating the same |
US11078112B2 (en) | 2017-05-25 | 2021-08-03 | Corning Incorporated | Silica-containing substrates with vias having an axially variable sidewall taper and methods for forming the same |
US10626040B2 (en) | 2017-06-15 | 2020-04-21 | Corning Incorporated | Articles capable of individual singulation |
US11554984B2 (en) | 2018-02-22 | 2023-01-17 | Corning Incorporated | Alkali-free borosilicate glasses with low post-HF etch roughness |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62128587A (ja) * | 1985-11-29 | 1987-06-10 | Matsushita Electric Ind Co Ltd | 半導体レ−ザ |
US5345454A (en) * | 1991-11-06 | 1994-09-06 | At&T Bell Laboratories | Antiresonant Fabry-Perot p-i-n modulator |
US5257276A (en) * | 1992-04-03 | 1993-10-26 | California Institute Of Technology | Strained layer InP/InGaAs quantum well laser |
JP3080831B2 (ja) * | 1994-02-03 | 2000-08-28 | 日本電気株式会社 | 多重量子井戸半導体レーザ |
US5627854A (en) * | 1995-03-15 | 1997-05-06 | Lucent Technologies Inc. | Saturable bragg reflector |
JPH09199799A (ja) * | 1996-01-19 | 1997-07-31 | Hitachi Ltd | モード同期レーザ |
US5701327A (en) * | 1996-04-30 | 1997-12-23 | Lucent Technologies Inc. | Saturable Bragg reflector structure and process for fabricating the same |
IT1286140B1 (it) * | 1996-07-02 | 1998-07-07 | Cselt Centro Studi Lab Telecom | Procedimento e dispositivo per la generazione di impulsi ottici ultracorti. |
JP3022437B2 (ja) * | 1997-09-25 | 2000-03-21 | 日本電気株式会社 | モード同期半導体レーザ |
-
1999
- 1999-06-22 US US09/338,458 patent/US6449301B1/en not_active Expired - Fee Related
-
2000
- 2000-06-21 EP EP00943033A patent/EP1188207B1/de not_active Expired - Lifetime
- 2000-06-21 DE DE60042157T patent/DE60042157D1/de not_active Expired - Lifetime
- 2000-06-21 AT AT00943033T patent/ATE431002T1/de not_active IP Right Cessation
- 2000-06-21 WO PCT/US2000/017127 patent/WO2000079657A1/en active Application Filing
- 2000-06-21 JP JP2001505117A patent/JP2003521106A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
EP1188207A4 (de) | 2005-09-21 |
JP2003521106A (ja) | 2003-07-08 |
DE60042157D1 (de) | 2009-06-18 |
EP1188207A1 (de) | 2002-03-20 |
EP1188207B1 (de) | 2009-05-06 |
US6449301B1 (en) | 2002-09-10 |
WO2000079657A1 (en) | 2000-12-28 |
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