ATE421788T1 - F2-zweikammerlasersystem mit linienauswahl - Google Patents
F2-zweikammerlasersystem mit linienauswahlInfo
- Publication number
- ATE421788T1 ATE421788T1 AT04011567T AT04011567T ATE421788T1 AT E421788 T1 ATE421788 T1 AT E421788T1 AT 04011567 T AT04011567 T AT 04011567T AT 04011567 T AT04011567 T AT 04011567T AT E421788 T1 ATE421788 T1 AT E421788T1
- Authority
- AT
- Austria
- Prior art keywords
- pulse
- portions
- laser
- laser system
- line selection
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/02—Constructional details
- H01S3/03—Constructional details of gas laser discharge tubes
- H01S3/036—Means for obtaining or maintaining the desired gas pressure within the tube, e.g. by gettering, replenishing; Means for circulating the gas, e.g. for equalising the pressure within the tube
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/02—Constructional details
- H01S3/03—Constructional details of gas laser discharge tubes
- H01S3/038—Electrodes, e.g. special shape, configuration or composition
- H01S3/0385—Shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/22—Gases
- H01S3/223—Gases the active gas being polyatomic, i.e. containing two or more atoms
- H01S3/225—Gases the active gas being polyatomic, i.e. containing two or more atoms comprising an excimer or exciplex
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/005—Optical devices external to the laser cavity, specially adapted for lasers, e.g. for homogenisation of the beam or for manipulating laser pulses, e.g. pulse shaping
- H01S3/0057—Temporal shaping, e.g. pulse compression, frequency chirping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/13—Stabilisation of laser output parameters, e.g. frequency or amplitude
- H01S3/131—Stabilisation of laser output parameters, e.g. frequency or amplitude by controlling the active medium, e.g. by controlling the processes or apparatus for excitation
- H01S3/134—Stabilisation of laser output parameters, e.g. frequency or amplitude by controlling the active medium, e.g. by controlling the processes or apparatus for excitation in gas lasers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/22—Gases
- H01S3/223—Gases the active gas being polyatomic, i.e. containing two or more atoms
- H01S3/225—Gases the active gas being polyatomic, i.e. containing two or more atoms comprising an excimer or exciplex
- H01S3/2251—ArF, i.e. argon fluoride is comprised for lasing around 193 nm
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/22—Gases
- H01S3/223—Gases the active gas being polyatomic, i.e. containing two or more atoms
- H01S3/225—Gases the active gas being polyatomic, i.e. containing two or more atoms comprising an excimer or exciplex
- H01S3/2258—F2, i.e. molecular fluoride is comprised for lasing around 157 nm
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Optics & Photonics (AREA)
- General Physics & Mathematics (AREA)
- Lasers (AREA)
- Optical Radar Systems And Details Thereof (AREA)
- Laser Surgery Devices (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (8)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/943,343 US6567450B2 (en) | 1999-12-10 | 2001-08-29 | Very narrow band, two chamber, high rep rate gas discharge laser system |
US09/970,503 US20020071468A1 (en) | 1999-09-27 | 2001-10-03 | Injection seeded F2 laser with pre-injection filter |
US10/000,991 US6795474B2 (en) | 2000-11-17 | 2001-11-14 | Gas discharge laser with improved beam path |
US10/006,913 US6535531B1 (en) | 2001-11-29 | 2001-11-29 | Gas discharge laser with pulse multiplier |
US10/012,002 US6625191B2 (en) | 1999-12-10 | 2001-11-30 | Very narrow band, two chamber, high rep rate gas discharge laser system |
US10/036,676 US6882674B2 (en) | 1999-12-27 | 2001-12-21 | Four KHz gas discharge laser system |
US10/036,727 US6865210B2 (en) | 2001-05-03 | 2001-12-21 | Timing control for two-chamber gas discharge laser system |
US10/056,619 US6801560B2 (en) | 1999-05-10 | 2002-01-23 | Line selected F2 two chamber laser system |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE421788T1 true ATE421788T1 (de) | 2009-02-15 |
Family
ID=21723234
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT04011567T ATE421788T1 (de) | 2001-08-29 | 2002-08-19 | F2-zweikammerlasersystem mit linienauswahl |
Country Status (4)
Country | Link |
---|---|
US (1) | US6535531B1 (de) |
JP (1) | JP2008294477A (de) |
AT (1) | ATE421788T1 (de) |
DE (1) | DE60230999D1 (de) |
Families Citing this family (76)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6625191B2 (en) * | 1999-12-10 | 2003-09-23 | Cymer, Inc. | Very narrow band, two chamber, high rep rate gas discharge laser system |
US7039086B2 (en) * | 2001-04-09 | 2006-05-02 | Cymer, Inc. | Control system for a two chamber gas discharge laser |
US7079564B2 (en) * | 2001-04-09 | 2006-07-18 | Cymer, Inc. | Control system for a two chamber gas discharge laser |
US7009140B2 (en) * | 2001-04-18 | 2006-03-07 | Cymer, Inc. | Laser thin film poly-silicon annealing optical system |
US7061959B2 (en) * | 2001-04-18 | 2006-06-13 | Tcz Gmbh | Laser thin film poly-silicon annealing system |
US7415056B2 (en) * | 2006-03-31 | 2008-08-19 | Cymer, Inc. | Confocal pulse stretcher |
US7372056B2 (en) * | 2005-06-29 | 2008-05-13 | Cymer, Inc. | LPP EUV plasma source material target delivery system |
US6928093B2 (en) * | 2002-05-07 | 2005-08-09 | Cymer, Inc. | Long delay and high TIS pulse stretcher |
US20050259709A1 (en) | 2002-05-07 | 2005-11-24 | Cymer, Inc. | Systems and methods for implementing an interaction between a laser shaped as a line beam and a film deposited on a substrate |
US7598509B2 (en) * | 2004-11-01 | 2009-10-06 | Cymer, Inc. | Laser produced plasma EUV light source |
US7465946B2 (en) * | 2004-03-10 | 2008-12-16 | Cymer, Inc. | Alternative fuels for EUV light source |
US7439530B2 (en) | 2005-06-29 | 2008-10-21 | Cymer, Inc. | LPP EUV light source drive laser system |
US7378673B2 (en) * | 2005-02-25 | 2008-05-27 | Cymer, Inc. | Source material dispenser for EUV light source |
US7830934B2 (en) * | 2001-08-29 | 2010-11-09 | Cymer, Inc. | Multi-chamber gas discharge laser bandwidth control through discharge timing |
US20050100072A1 (en) * | 2001-11-14 | 2005-05-12 | Rao Rajasekhar M. | High power laser output beam energy density reduction |
WO2004012308A2 (en) * | 2002-07-31 | 2004-02-05 | Cymer, Inc. | Control system for a two chamber gas discharge laser |
US7741639B2 (en) * | 2003-01-31 | 2010-06-22 | Cymer, Inc. | Multi-chambered excimer or molecular fluorine gas discharge laser fluorine injection control |
US7217941B2 (en) * | 2003-04-08 | 2007-05-15 | Cymer, Inc. | Systems and methods for deflecting plasma-generated ions to prevent the ions from reaching an internal component of an EUV light source |
US7277188B2 (en) * | 2003-04-29 | 2007-10-02 | Cymer, Inc. | Systems and methods for implementing an interaction between a laser shaped as a line beam and a film deposited on a substrate |
US7813406B1 (en) | 2003-10-15 | 2010-10-12 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Temporal laser pulse manipulation using multiple optical ring-cavities |
US7321468B2 (en) * | 2003-12-15 | 2008-01-22 | Carl Zeiss Laser Optics Gmbh | Method and optical arrangement for beam guiding of a light beam with beam delay |
US7486707B2 (en) * | 2003-12-15 | 2009-02-03 | Carl Zeiss Laser Optics Gmbh | Optical delay module for lenghtening the propagation path of a light beam and pulse multiplication or elongation module |
US7035012B2 (en) * | 2004-03-01 | 2006-04-25 | Coherent, Inc. | Optical pulse duration extender |
US7196342B2 (en) * | 2004-03-10 | 2007-03-27 | Cymer, Inc. | Systems and methods for reducing the influence of plasma-generated debris on the internal components of an EUV light source |
US7006547B2 (en) * | 2004-03-31 | 2006-02-28 | Cymer, Inc. | Very high repetition rate narrow band gas discharge laser system |
US7522650B2 (en) * | 2004-03-31 | 2009-04-21 | Cymer, Inc. | Gas discharge laser chamber improvements |
US7564888B2 (en) * | 2004-05-18 | 2009-07-21 | Cymer, Inc. | High power excimer laser with a pulse stretcher |
US20050286599A1 (en) | 2004-06-29 | 2005-12-29 | Rafac Robert J | Method and apparatus for gas discharge laser output light coherency reduction |
US7355191B2 (en) * | 2004-11-01 | 2008-04-08 | Cymer, Inc. | Systems and methods for cleaning a chamber window of an EUV light source |
US7432517B2 (en) * | 2004-11-19 | 2008-10-07 | Asml Netherlands B.V. | Pulse modifier, lithographic apparatus, and device manufacturing method |
US7408714B2 (en) * | 2005-02-11 | 2008-08-05 | Coherent, Inc. | Method and apparatus for coupling laser beams |
US7482609B2 (en) * | 2005-02-28 | 2009-01-27 | Cymer, Inc. | LPP EUV light source drive laser system |
US20060222034A1 (en) * | 2005-03-31 | 2006-10-05 | Cymer, Inc. | 6 Khz and above gas discharge laser system |
US7180083B2 (en) * | 2005-06-27 | 2007-02-20 | Cymer, Inc. | EUV light source collector erosion mitigation |
US7365349B2 (en) * | 2005-06-27 | 2008-04-29 | Cymer, Inc. | EUV light source collector lifetime improvements |
US7633989B2 (en) * | 2005-06-27 | 2009-12-15 | Cymer, Inc. | High pulse repetition rate gas discharge laser |
US7394083B2 (en) | 2005-07-08 | 2008-07-01 | Cymer, Inc. | Systems and methods for EUV light source metrology |
US7326948B2 (en) * | 2005-08-15 | 2008-02-05 | Asml Netherlands B.V. | Beam modifying device, lithographic projection apparatus, method of treating a beam, and device manufacturing method |
US7679029B2 (en) * | 2005-10-28 | 2010-03-16 | Cymer, Inc. | Systems and methods to shape laser light as a line beam for interaction with a substrate having surface variations |
US7317179B2 (en) * | 2005-10-28 | 2008-01-08 | Cymer, Inc. | Systems and methods to shape laser light as a homogeneous line beam for interaction with a film deposited on a substrate |
US7453077B2 (en) * | 2005-11-05 | 2008-11-18 | Cymer, Inc. | EUV light source |
US8803027B2 (en) * | 2006-06-05 | 2014-08-12 | Cymer, Llc | Device and method to create a low divergence, high power laser beam for material processing applications |
US7400658B1 (en) * | 2007-03-08 | 2008-07-15 | Coherent, Inc. | Quasi-CW UV laser with low peak pulse-power |
US7403550B1 (en) | 2007-03-08 | 2008-07-22 | Coherent, Inc. | Quasi-CW UV laser with low peak pulse-power |
US7620080B2 (en) * | 2007-08-23 | 2009-11-17 | Corning Incorporated | Laser pulse conditioning |
US7961764B2 (en) * | 2007-09-12 | 2011-06-14 | Howard Hughes Medical Institute | Nonlinear imaging using passive pulse splitters and related technologies |
US20090080467A1 (en) * | 2007-09-24 | 2009-03-26 | Andrei Starodoumov | Pulse repetition frequency-multipler for fiber lasers |
US20090180731A1 (en) * | 2008-01-07 | 2009-07-16 | Southern Methodist University | Photonic coupler |
US7720120B2 (en) * | 2008-10-21 | 2010-05-18 | Cymer, Inc. | Method and apparatus for laser control in a two chamber gas discharge laser |
US7751453B2 (en) * | 2008-10-21 | 2010-07-06 | Cymer, Inc. | Method and apparatus for laser control in a two chamber gas discharge laser |
US7756171B2 (en) * | 2008-10-21 | 2010-07-13 | Cymer, Inc. | Method and apparatus for laser control in a two chamber gas discharge laser |
NL2004483A (nl) * | 2009-05-26 | 2010-11-30 | Asml Holding Nv | Pulse stretcher with reduced energy density on optical components. |
US9793673B2 (en) | 2011-06-13 | 2017-10-17 | Kla-Tencor Corporation | Semiconductor inspection and metrology system using laser pulse multiplier |
US10197501B2 (en) | 2011-12-12 | 2019-02-05 | Kla-Tencor Corporation | Electron-bombarded charge-coupled device and inspection systems using EBCCD detectors |
US8755122B2 (en) | 2011-12-12 | 2014-06-17 | Corning Incorporated | Laser pulse stretching unit and method for using same |
US8724203B2 (en) | 2011-12-12 | 2014-05-13 | Corning Incorporated | Variable pulse stretching length by variable beamsplitter reflectivity |
US9496425B2 (en) | 2012-04-10 | 2016-11-15 | Kla-Tencor Corporation | Back-illuminated sensor with boron layer |
US9601299B2 (en) | 2012-08-03 | 2017-03-21 | Kla-Tencor Corporation | Photocathode including silicon substrate with boron layer |
US9151940B2 (en) * | 2012-12-05 | 2015-10-06 | Kla-Tencor Corporation | Semiconductor inspection and metrology system using laser pulse multiplier |
US9529182B2 (en) | 2013-02-13 | 2016-12-27 | KLA—Tencor Corporation | 193nm laser and inspection system |
JP6270820B2 (ja) | 2013-03-27 | 2018-01-31 | 国立大学法人九州大学 | レーザアニール装置 |
US9748294B2 (en) | 2014-01-10 | 2017-08-29 | Hamamatsu Photonics K.K. | Anti-reflection layer for back-illuminated sensor |
US9525265B2 (en) | 2014-06-20 | 2016-12-20 | Kla-Tencor Corporation | Laser repetition rate multiplier and flat-top beam profile generators using mirrors and/or prisms |
US9767986B2 (en) | 2014-08-29 | 2017-09-19 | Kla-Tencor Corporation | Scanning electron microscope and methods of inspecting and reviewing samples |
US9748729B2 (en) | 2014-10-03 | 2017-08-29 | Kla-Tencor Corporation | 183NM laser and inspection system |
JP5965454B2 (ja) * | 2014-10-14 | 2016-08-03 | 株式会社アマダホールディングス | ダイレクトダイオードレーザ加工装置及びこれを用いた板金の加工方法 |
US9860466B2 (en) | 2015-05-14 | 2018-01-02 | Kla-Tencor Corporation | Sensor with electrically controllable aperture for inspection and metrology systems |
US10748730B2 (en) | 2015-05-21 | 2020-08-18 | Kla-Tencor Corporation | Photocathode including field emitter array on a silicon substrate with boron layer |
US10462391B2 (en) | 2015-08-14 | 2019-10-29 | Kla-Tencor Corporation | Dark-field inspection using a low-noise sensor |
US10778925B2 (en) | 2016-04-06 | 2020-09-15 | Kla-Tencor Corporation | Multiple column per channel CCD sensor architecture for inspection and metrology |
US10313622B2 (en) | 2016-04-06 | 2019-06-04 | Kla-Tencor Corporation | Dual-column-parallel CCD sensor and inspection systems using a sensor |
US10175555B2 (en) | 2017-01-03 | 2019-01-08 | KLA—Tencor Corporation | 183 nm CW laser and inspection system |
US11114489B2 (en) | 2018-06-18 | 2021-09-07 | Kla-Tencor Corporation | Back-illuminated sensor and a method of manufacturing a sensor |
US10943760B2 (en) | 2018-10-12 | 2021-03-09 | Kla Corporation | Electron gun and electron microscope |
US11114491B2 (en) | 2018-12-12 | 2021-09-07 | Kla Corporation | Back-illuminated sensor and a method of manufacturing a sensor |
US11848350B2 (en) | 2020-04-08 | 2023-12-19 | Kla Corporation | Back-illuminated sensor and a method of manufacturing a sensor using a silicon on insulator wafer |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4948212A (en) * | 1988-08-22 | 1990-08-14 | California Institute Of Technology | Optical processing in III-V and II-VI compound semiconductors |
US4945220A (en) * | 1988-11-16 | 1990-07-31 | Prometrix Corporation | Autofocusing system for microscope having contrast detection means |
US5489984A (en) * | 1994-04-01 | 1996-02-06 | Imra America, Inc. | Differential ranging measurement system and method utilizing ultrashort pulses |
US6330261B1 (en) * | 1997-07-18 | 2001-12-11 | Cymer, Inc. | Reliable, modular, production quality narrow-band high rep rate ArF excimer laser |
JP2000058944A (ja) * | 1998-05-20 | 2000-02-25 | Cymer Inc | 高信頼性・モジュラ製造高品質狭帯域高繰り返しレ―トf2レ―ザ |
WO2000011766A1 (en) * | 1998-08-20 | 2000-03-02 | Orbotech Ltd. | Laser repetition rate multiplier |
US6067311A (en) * | 1998-09-04 | 2000-05-23 | Cymer, Inc. | Excimer laser with pulse multiplier |
-
2001
- 2001-11-29 US US10/006,913 patent/US6535531B1/en not_active Expired - Lifetime
-
2002
- 2002-08-19 AT AT04011567T patent/ATE421788T1/de not_active IP Right Cessation
- 2002-08-19 DE DE60230999T patent/DE60230999D1/de not_active Expired - Fee Related
-
2008
- 2008-08-25 JP JP2008215610A patent/JP2008294477A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
DE60230999D1 (de) | 2009-03-12 |
JP2008294477A (ja) | 2008-12-04 |
US6535531B1 (en) | 2003-03-18 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |