ATE412269T1 - Architektur und verfahren zur berechnung mit rekonfigurierbaren widerstands-crossbar-switches im nanometerbereich - Google Patents

Architektur und verfahren zur berechnung mit rekonfigurierbaren widerstands-crossbar-switches im nanometerbereich

Info

Publication number
ATE412269T1
ATE412269T1 AT05748148T AT05748148T ATE412269T1 AT E412269 T1 ATE412269 T1 AT E412269T1 AT 05748148 T AT05748148 T AT 05748148T AT 05748148 T AT05748148 T AT 05748148T AT E412269 T1 ATE412269 T1 AT E412269T1
Authority
AT
Austria
Prior art keywords
nanometer scale
architecture
crossbar switches
calculation
methods
Prior art date
Application number
AT05748148T
Other languages
English (en)
Inventor
Gregory Snider
Original Assignee
Hewlett Packard Development Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hewlett Packard Development Co filed Critical Hewlett Packard Development Co
Application granted granted Critical
Publication of ATE412269T1 publication Critical patent/ATE412269T1/de

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K19/00Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K19/00Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/701Organic molecular electronic devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K19/00Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
    • H10K19/202Integrated devices comprising a common active layer
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00Nanotechnology
    • Y10S977/70Nanostructure
    • Y10S977/701Integrated with dissimilar structures on a common substrate
    • Y10S977/708Integrated with dissimilar structures on a common substrate with distinct switching device

Landscapes

  • Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Computing Systems (AREA)
  • Theoretical Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • Logic Circuits (AREA)
  • Complex Calculations (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
AT05748148T 2004-05-10 2005-05-10 Architektur und verfahren zur berechnung mit rekonfigurierbaren widerstands-crossbar-switches im nanometerbereich ATE412269T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/842,762 US7203789B2 (en) 2004-05-10 2004-05-10 Architecture and methods for computing with reconfigurable resistor crossbars

Publications (1)

Publication Number Publication Date
ATE412269T1 true ATE412269T1 (de) 2008-11-15

Family

ID=34969577

Family Applications (1)

Application Number Title Priority Date Filing Date
AT05748148T ATE412269T1 (de) 2004-05-10 2005-05-10 Architektur und verfahren zur berechnung mit rekonfigurierbaren widerstands-crossbar-switches im nanometerbereich

Country Status (6)

Country Link
US (1) US7203789B2 (de)
EP (1) EP1745549B1 (de)
JP (1) JP4615012B2 (de)
AT (1) ATE412269T1 (de)
DE (1) DE602005010567D1 (de)
WO (1) WO2005112264A1 (de)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7525833B2 (en) * 2005-10-21 2009-04-28 Hewlett-Packard Development Company, L.P. Nanoscale shift register and signal demultiplexing using microscale/nanoscale shift registers
US7902867B2 (en) * 2006-04-03 2011-03-08 Blaise Laurent Mouttet Memristor crossbar neural interface
US20070233761A1 (en) * 2006-04-03 2007-10-04 Mouttet Blaise L Crossbar arithmetic processor
US8183554B2 (en) * 2006-04-03 2012-05-22 Blaise Laurent Mouttet Symmetrical programmable memresistor crossbar structure
US7576565B2 (en) * 2006-04-03 2009-08-18 Blaise Laurent Mouttet Crossbar waveform driver circuit
US7302513B2 (en) * 2006-04-03 2007-11-27 Blaise Laurent Mouttet Programmable crossbar signal processor
US9965251B2 (en) * 2006-04-03 2018-05-08 Blaise Laurent Mouttet Crossbar arithmetic and summation processor
US8254049B2 (en) * 2007-08-20 2012-08-28 Agere Systems Inc. Systems and methods for improved synchronization between an asynchronously detected signal and a synchronous operation
US20100090189A1 (en) * 2008-09-15 2010-04-15 Savransky Semyon D Nanoscale electrical device
WO2010068221A1 (en) * 2008-12-12 2010-06-17 Hewlett-Packard Development Company, L.P. Memristive device
US8780606B2 (en) * 2008-12-23 2014-07-15 Hewlett-Packard Development Company, L.P. Memristive device having a porous dopant diffusion element
US8582344B2 (en) 2008-12-30 2013-11-12 Hewlett-Packard Development Company, L.P. Multiplexer/de-multiplexer memristive device
US8891283B2 (en) * 2009-01-05 2014-11-18 Hewlett-Packard Development Company, L.P. Memristive device based on current modulation by trapped charges
US8787064B2 (en) * 2009-01-13 2014-07-22 Hewlett-Packard Development Company, L.P. Programmable bipolar electronic device
US8614432B2 (en) 2009-01-15 2013-12-24 Hewlett-Packard Development Company, L.P. Crystalline silicon-based memristive device with multiple mobile dopant species
US8471234B2 (en) 2009-01-20 2013-06-25 Hewlett-Packard Development Company, L.P. Multilayer memristive devices
US9715655B2 (en) 2013-12-18 2017-07-25 The United States Of America As Represented By The Secretary Of The Air Force Method and apparatus for performing close-loop programming of resistive memory devices in crossbar array based hardware circuits and systems
CN106463171A (zh) 2014-04-28 2017-02-22 慧与发展有限责任合伙企业 多模态忆阻器存储器
US10452585B2 (en) 2016-09-16 2019-10-22 Hewlett Packard Enterprise Development Lp Crossbar switch with pipeline delay registers
US10719296B2 (en) * 2018-01-17 2020-07-21 Macronix International Co., Ltd. Sum-of-products accelerator array

Family Cites Families (18)

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Publication number Priority date Publication date Assignee Title
US6002268A (en) * 1993-01-08 1999-12-14 Dynachip Corporation FPGA with conductors segmented by active repeaters
JPH09307428A (ja) * 1996-05-14 1997-11-28 Hitachi Ltd 可変論理集積回路
US6256767B1 (en) 1999-03-29 2001-07-03 Hewlett-Packard Company Demultiplexer for a molecular wire crossbar network (MWCN DEMUX)
US6518156B1 (en) 1999-03-29 2003-02-11 Hewlett-Packard Company Configurable nanoscale crossbar electronic circuits made by electrochemical reaction
US7030408B1 (en) 1999-03-29 2006-04-18 Hewlett-Packard Development Company, L.P. Molecular wire transistor (MWT)
US6459095B1 (en) 1999-03-29 2002-10-01 Hewlett-Packard Company Chemically synthesized and assembled electronics devices
US6314019B1 (en) 1999-03-29 2001-11-06 Hewlett-Packard Company Molecular-wire crossbar interconnect (MWCI) for signal routing and communications
US6128214A (en) * 1999-03-29 2000-10-03 Hewlett-Packard Molecular wire crossbar memory
ATE481745T1 (de) 1999-07-02 2010-10-15 Harvard College Nanoskopischen draht enthaltende anordnung, logische felder und verfahren zu deren herstellung
US6518796B1 (en) * 2000-06-30 2003-02-11 Intel Corporation Dynamic CMOS circuits with individually adjustable noise immunity
WO2002009117A1 (en) * 2000-07-25 2002-01-31 Wm. Marsh Rice University Programmable molecular device
US6512119B2 (en) 2001-01-12 2003-01-28 Hewlett-Packard Company Bistable molecular mechanical devices with an appended rotor activated by an electric field for electronic switching, gating and memory applications
US6663797B2 (en) 2000-12-14 2003-12-16 Hewlett-Packard Development Company, L.P. Stabilization of configurable molecular mechanical devices
US6674932B1 (en) 2000-12-14 2004-01-06 Hewlett-Packard Development Company, L.P. Bistable molecular mechanical devices with a middle rotating segment activated by an electric field for electronic switching, gating, and memory applications
US6541309B2 (en) * 2001-03-21 2003-04-01 Hewlett-Packard Development Company Lp Fabricating a molecular electronic device having a protective barrier layer
US6432740B1 (en) * 2001-06-28 2002-08-13 Hewlett-Packard Company Fabrication of molecular electronic circuit by imprinting
US6586965B2 (en) * 2001-10-29 2003-07-01 Hewlett Packard Development Company Lp Molecular crossbar latch
US8004876B2 (en) * 2002-08-30 2011-08-23 Hewlett-Packard Development Company, L.P. Configurable molecular switch array

Also Published As

Publication number Publication date
DE602005010567D1 (de) 2008-12-04
JP4615012B2 (ja) 2011-01-19
EP1745549B1 (de) 2008-10-22
JP2007537678A (ja) 2007-12-20
WO2005112264A1 (en) 2005-11-24
EP1745549A1 (de) 2007-01-24
US7203789B2 (en) 2007-04-10
US20050258872A1 (en) 2005-11-24

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Legal Events

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