ATE373623T1 - Metallverdrahtungsverfahren für unterschnittene löcher - Google Patents

Metallverdrahtungsverfahren für unterschnittene löcher

Info

Publication number
ATE373623T1
ATE373623T1 AT03256418T AT03256418T ATE373623T1 AT E373623 T1 ATE373623 T1 AT E373623T1 AT 03256418 T AT03256418 T AT 03256418T AT 03256418 T AT03256418 T AT 03256418T AT E373623 T1 ATE373623 T1 AT E373623T1
Authority
AT
Austria
Prior art keywords
metal wiring
undercut
wiring method
undercut holes
milling
Prior art date
Application number
AT03256418T
Other languages
English (en)
Inventor
Ci-Moo Shong
Seok-Whan Chung
Seok-Jin Kang
Moon-Chul Lee
Kyu-Dong Jung
Jong-Seok Kim
Chan-Bong Jun
Seog-Woo Hong
Jung-Ho Kang
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Application granted granted Critical
Publication of ATE373623T1 publication Critical patent/ATE373623T1/de

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81BMICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00Microstructural systems; Auxiliary parts of microstructural devices or systems
    • B81B7/0006Interconnects
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877Filling of holes, grooves or trenches, e.g. vias, with conductive material
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/52Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5226Via connections in a multilevel interconnection structure
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Micromachines (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Coating With Molten Metal (AREA)
AT03256418T 2002-10-17 2003-10-10 Metallverdrahtungsverfahren für unterschnittene löcher ATE373623T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR10-2002-0063608A KR100461002B1 (ko) 2002-10-17 2002-10-17 언더컷 메탈 배선방법

Publications (1)

Publication Number Publication Date
ATE373623T1 true ATE373623T1 (de) 2007-10-15

Family

ID=36592652

Family Applications (1)

Application Number Title Priority Date Filing Date
AT03256418T ATE373623T1 (de) 2002-10-17 2003-10-10 Metallverdrahtungsverfahren für unterschnittene löcher

Country Status (9)

Country Link
US (1) US6835594B2 (de)
EP (1) EP1411025B1 (de)
JP (1) JP2004136435A (de)
KR (1) KR100461002B1 (de)
AT (1) ATE373623T1 (de)
DE (1) DE60316394T2 (de)
DK (1) DK1411025T3 (de)
ES (1) ES2294247T3 (de)
TW (1) TWI233917B (de)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA2621103C (en) * 2005-09-06 2015-11-03 Nantero, Inc. Nanotube fabric-based sensor systems and methods of making same
US7915696B2 (en) * 2007-10-24 2011-03-29 General Electric Company Electrical connection through a substrate to a microelectromechanical device

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH047836A (ja) * 1990-04-26 1992-01-13 Toshiba Corp 半導体装置及びその製造方法
US5198390A (en) * 1992-01-16 1993-03-30 Cornell Research Foundation, Inc. RIE process for fabricating submicron, silicon electromechanical structures
US5468595A (en) * 1993-01-29 1995-11-21 Electron Vision Corporation Method for three-dimensional control of solubility properties of resist layers
US5363021A (en) * 1993-07-12 1994-11-08 Cornell Research Foundation, Inc. Massively parallel array cathode
EP0735577A3 (de) * 1994-12-14 1997-04-02 Applied Materials Inc Abscheidungsverfahren und Einrichtung dafür
US5610431A (en) * 1995-05-12 1997-03-11 The Charles Stark Draper Laboratory, Inc. Covers for micromechanical sensors and other semiconductor devices
KR100442824B1 (ko) * 1997-05-12 2004-09-18 삼성전자주식회사 마이크로구조물소자및그제조방법
US6333560B1 (en) * 1999-01-14 2001-12-25 International Business Machines Corporation Process and structure for an interlock and high performance multilevel structures for chip interconnects and packaging technologies
EP1050905B1 (de) * 1999-05-07 2017-06-21 Shinko Electric Industries Co. Ltd. Verfahren zur Herstellung einer Halbleitervorrichtung mit isolierender Schicht
KR100314622B1 (ko) * 1999-06-15 2001-11-17 이형도 마이크로 센서 및 그 패키지방법
JP3872936B2 (ja) * 2000-06-30 2007-01-24 株式会社東芝 磁気抵抗効果素子の製造方法と強磁性トンネル接合素子
JP2002043317A (ja) * 2000-07-27 2002-02-08 Sony Corp 半導体装置の製造方法
US6566274B1 (en) * 2001-11-28 2003-05-20 Unaxis Balzer Limited Lithography process for transparent substrates

Also Published As

Publication number Publication date
TW200426110A (en) 2004-12-01
EP1411025A3 (de) 2004-11-03
DE60316394T2 (de) 2008-01-17
EP1411025A2 (de) 2004-04-21
TWI233917B (en) 2005-06-11
KR100461002B1 (ko) 2004-12-09
DE60316394D1 (de) 2007-10-31
US20040203186A1 (en) 2004-10-14
ES2294247T3 (es) 2008-04-01
EP1411025B1 (de) 2007-09-19
DK1411025T3 (da) 2007-11-05
JP2004136435A (ja) 2004-05-13
US6835594B2 (en) 2004-12-28
KR20040034949A (ko) 2004-04-29

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Legal Events

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