ATE348329T1 - Vorrichtung und verfahren zur zerstörungsfreien messung der eigenschaften eines halbleitersubstrats - Google Patents

Vorrichtung und verfahren zur zerstörungsfreien messung der eigenschaften eines halbleitersubstrats

Info

Publication number
ATE348329T1
ATE348329T1 AT03447186T AT03447186T ATE348329T1 AT E348329 T1 ATE348329 T1 AT E348329T1 AT 03447186 T AT03447186 T AT 03447186T AT 03447186 T AT03447186 T AT 03447186T AT E348329 T1 ATE348329 T1 AT E348329T1
Authority
AT
Austria
Prior art keywords
semiconductor substrate
properties
destructive measuring
components
laser
Prior art date
Application number
AT03447186T
Other languages
English (en)
Inventor
Trudo Clarysse
Wilfried Vandervorst
Original Assignee
Imec Inter Uni Micro Electr
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Imec Inter Uni Micro Electr filed Critical Imec Inter Uni Micro Electr
Application granted granted Critical
Publication of ATE348329T1 publication Critical patent/ATE348329T1/de

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
    • G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
    • G01N21/636—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited using an arrangement of pump beam and probe beam; using the measurement of optical non-linear properties
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/1717—Systems in which incident light is modified in accordance with the properties of the material investigated with a modulation of one or more physical properties of the sample during the optical investigation, e.g. electro-reflectance
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/1717—Systems in which incident light is modified in accordance with the properties of the material investigated with a modulation of one or more physical properties of the sample during the optical investigation, e.g. electro-reflectance
    • G01N2021/1719—Carrier modulation in semiconductors

Landscapes

  • Health & Medical Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Pathology (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
  • Nonlinear Science (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
AT03447186T 2002-07-19 2003-07-17 Vorrichtung und verfahren zur zerstörungsfreien messung der eigenschaften eines halbleitersubstrats ATE348329T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US39756602P 2002-07-19 2002-07-19

Publications (1)

Publication Number Publication Date
ATE348329T1 true ATE348329T1 (de) 2007-01-15

Family

ID=29780543

Family Applications (1)

Application Number Title Priority Date Filing Date
AT03447186T ATE348329T1 (de) 2002-07-19 2003-07-17 Vorrichtung und verfahren zur zerstörungsfreien messung der eigenschaften eines halbleitersubstrats

Country Status (4)

Country Link
US (1) US7133128B2 (de)
EP (1) EP1382958B1 (de)
AT (1) ATE348329T1 (de)
DE (1) DE60310318T2 (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006030156A (ja) * 2004-06-15 2006-02-02 Olympus Corp 反応容器及びその反応容器を用いた反応装置並びに検出装置
GB0518200D0 (en) * 2005-09-07 2005-10-19 Imec Inter Uni Micro Electr A method and device to quantify active carrier profiles in ultra-shallow semiconductor structures
US7714999B2 (en) * 2006-12-06 2010-05-11 Applied Materials Israel, Ltd. High resolution wafer inspection system
CN103080725B (zh) * 2010-07-21 2016-08-10 Imec公司 用于确定有效掺杂物分布的方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4211488A (en) * 1978-10-03 1980-07-08 Rca Corporation Optical testing of a semiconductor
US5042952A (en) * 1984-05-21 1991-08-27 Therma-Wave, Inc. Method and apparatus for evaluating surface and subsurface and subsurface features in a semiconductor
IL96483A (en) * 1990-11-27 1995-07-31 Orbotech Ltd Optical inspection method and apparatus
US5966019A (en) * 1996-04-24 1999-10-12 Boxer Cross, Inc. System and method for measuring properties of a semiconductor substrate in a fabrication line
US6049220A (en) * 1998-06-10 2000-04-11 Boxer Cross Incorporated Apparatus and method for evaluating a wafer of semiconductor material
US6323951B1 (en) * 1999-03-22 2001-11-27 Boxer Cross Incorporated Apparatus and method for determining the active dopant profile in a semiconductor wafer
US6392756B1 (en) * 1999-06-18 2002-05-21 N&K Technology, Inc. Method and apparatus for optically determining physical parameters of thin films deposited on a complex substrate

Also Published As

Publication number Publication date
DE60310318T2 (de) 2007-05-16
DE60310318D1 (de) 2007-01-25
EP1382958A2 (de) 2004-01-21
US7133128B2 (en) 2006-11-07
EP1382958A3 (de) 2004-05-12
EP1382958B1 (de) 2006-12-13
US20040064263A1 (en) 2004-04-01

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Legal Events

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RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties