ATE344530T1 - Verfahren zum messen der leistung eine raster- elektronenmikroskops - Google Patents

Verfahren zum messen der leistung eine raster- elektronenmikroskops

Info

Publication number
ATE344530T1
ATE344530T1 AT02751492T AT02751492T ATE344530T1 AT E344530 T1 ATE344530 T1 AT E344530T1 AT 02751492 T AT02751492 T AT 02751492T AT 02751492 T AT02751492 T AT 02751492T AT E344530 T1 ATE344530 T1 AT E344530T1
Authority
AT
Austria
Prior art keywords
sub
surface areas
electron microscope
scanning electron
sem
Prior art date
Application number
AT02751492T
Other languages
English (en)
Inventor
Peter Dirksen
Rene J G Elfrink
Casparus A H Juffermans
Original Assignee
Koninkl Philips Electronics Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninkl Philips Electronics Nv filed Critical Koninkl Philips Electronics Nv
Application granted granted Critical
Publication of ATE344530T1 publication Critical patent/ATE344530T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/261—Details
    • H01J37/263—Contrast, resolution or power of penetration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26—Electron or ion microscopes
    • H01J2237/282—Determination of microscope properties
    • H01J2237/2823—Resolution

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Electron Sources, Ion Sources (AREA)
AT02751492T 2001-07-26 2002-07-19 Verfahren zum messen der leistung eine raster- elektronenmikroskops ATE344530T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP01202856 2001-07-26

Publications (1)

Publication Number Publication Date
ATE344530T1 true ATE344530T1 (de) 2006-11-15

Family

ID=8180710

Family Applications (1)

Application Number Title Priority Date Filing Date
AT02751492T ATE344530T1 (de) 2001-07-26 2002-07-19 Verfahren zum messen der leistung eine raster- elektronenmikroskops

Country Status (9)

Country Link
US (1) US6960764B2 (de)
EP (1) EP1415320B1 (de)
JP (1) JP2004537142A (de)
KR (1) KR20040028623A (de)
CN (1) CN1305100C (de)
AT (1) ATE344530T1 (de)
DE (1) DE60215821T2 (de)
TW (1) TW571335B (de)
WO (1) WO2003010792A1 (de)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4263416B2 (ja) * 2001-08-24 2009-05-13 株式会社日立製作所 荷電粒子顕微鏡評価システム
DE10250893B4 (de) * 2002-10-31 2008-04-03 Advanced Micro Devices, Inc., Sunnyvale Verfahren und Vorrichtung zum Bestimmen der Abmessung eines Strukturelements durch Variieren eines die Auflösung bestimmenden Parameters
US7358493B2 (en) * 2005-06-08 2008-04-15 Infineon Technologies Richmond, Lp Method and apparatus for automated beam optimization in a scanning electron microscope
GB0519066D0 (en) * 2005-09-19 2005-10-26 Aion Diagnostics Analytical device
DE102006061978A1 (de) * 2006-12-21 2008-06-26 Forschungszentrum Jülich GmbH Elektronenmikroskop und Verfahren zur Messung der Defokusstreuung
CN101964289B (zh) * 2010-08-25 2012-05-30 北京中科科仪技术发展有限责任公司 一种用于透射电镜的加速极的制造方法及其陶瓷环
JP5723249B2 (ja) * 2011-09-13 2015-05-27 日本電子株式会社 信号処理方法、及び信号処理装置
CN104266572B (zh) * 2014-09-16 2017-08-11 电子科技大学 一种测量扫描电子显微镜电子束斑尺寸的方法
US10366862B2 (en) * 2015-09-21 2019-07-30 KLA-Tencor Corporaton Method and system for noise mitigation in a multi-beam scanning electron microscopy system
DE102018201411A1 (de) * 2018-01-30 2019-08-01 Robert Bosch Gmbh Verfahren zum Ermitteln eines zeitlichen Verlaufs einer Messgröße, Prognosesystem, Aktorsteuerungssystem, Verfahren zum Trainieren des Aktorsteuerungssystems,Trainingssystem, Computerprogramm und maschinenlesbares Speichermedium
CN111447364B (zh) * 2020-04-15 2021-11-26 上海华力集成电路制造有限公司 一种cdsem图像处理方法及其装置
CN114765113B (zh) * 2021-01-15 2024-07-05 长鑫存储技术有限公司 半导体结构尺寸的测量方法及设备
CN121762174B (zh) * 2026-03-03 2026-05-01 西北工业大学 基于电解氢气泡的随体piv边界层流场测试系统及测试方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4335189A (en) * 1980-07-28 1982-06-15 International Business Machines Corp. Resolution standard for scanning electron microscope comprising palladium spines on a metal substrate
JP3490490B2 (ja) * 1994-01-28 2004-01-26 株式会社東芝 パターン画像処理装置及び画像処理方法
JPH07272664A (ja) * 1994-03-30 1995-10-20 Hitachi Ltd 走査電子顕微鏡の分解能評価用試料の作製方法
JP2671860B2 (ja) * 1995-03-30 1997-11-05 日本電気株式会社 フラッシュメモリ用ファイルシステム
JP3250721B2 (ja) * 1995-12-12 2002-01-28 キヤノン株式会社 Ｓｏｉ基板の製造方法
US6107637A (en) * 1997-08-11 2000-08-22 Hitachi, Ltd. Electron beam exposure or system inspection or measurement apparatus and its method and height detection apparatus
US6757645B2 (en) * 1997-09-17 2004-06-29 Numerical Technologies, Inc. Visual inspection and verification system
US7107571B2 (en) * 1997-09-17 2006-09-12 Synopsys, Inc. Visual analysis and verification system using advanced tools
JPH11224640A (ja) * 1998-02-10 1999-08-17 Hitachi Ltd 電子顕微鏡およびその分解能評価方法並びにそれを用いた半導体製造方法
US6827979B2 (en) * 1999-01-07 2004-12-07 Northwestern University Methods utilizing scanning probe microscope tips and products therefor or produced thereby
US6825480B1 (en) * 1999-06-23 2004-11-30 Hitachi, Ltd. Charged particle beam apparatus and automatic astigmatism adjustment method
US6657431B2 (en) * 2000-06-06 2003-12-02 Brown University Research Foundation Scanning magnetic microscope having improved magnetic sensor

Also Published As

Publication number Publication date
CN1305100C (zh) 2007-03-14
DE60215821D1 (de) 2006-12-14
US20040173748A1 (en) 2004-09-09
KR20040028623A (ko) 2004-04-03
TW571335B (en) 2004-01-11
EP1415320A1 (de) 2004-05-06
WO2003010792A1 (en) 2003-02-06
EP1415320B1 (de) 2006-11-02
US6960764B2 (en) 2005-11-01
CN1476627A (zh) 2004-02-18
DE60215821T2 (de) 2007-09-06
JP2004537142A (ja) 2004-12-09

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