ATE323328T1 - Herstellungsverfahren für optische vorrichtungen und verbesserungen - Google Patents

Herstellungsverfahren für optische vorrichtungen und verbesserungen

Info

Publication number
ATE323328T1
ATE323328T1 AT02716203T AT02716203T ATE323328T1 AT E323328 T1 ATE323328 T1 AT E323328T1 AT 02716203 T AT02716203 T AT 02716203T AT 02716203 T AT02716203 T AT 02716203T AT E323328 T1 ATE323328 T1 AT E323328T1
Authority
AT
Austria
Prior art keywords
optical
dielectric layer
body portion
integrated circuit
layer
Prior art date
Application number
AT02716203T
Other languages
English (en)
Inventor
John Haig Marsh
Stewart Duncan Mcdougall
Craig James Hamilton
Olek Peter Kowalski
Original Assignee
Univ Glasgow
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ Glasgow filed Critical Univ Glasgow
Application granted granted Critical
Publication of ATE323328T1 publication Critical patent/ATE323328T1/de

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
    • H01S5/2063—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion obtained by particle bombardment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
    • H01S5/2068—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion obtained by radiation treatment or annealing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3413—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers comprising partially disordered wells or barriers
    • H01S5/3414—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers comprising partially disordered wells or barriers by vacancy induced interdiffusion

Landscapes

  • Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Optics & Photonics (AREA)
  • Biophysics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Semiconductor Lasers (AREA)
  • Glass Compositions (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
AT02716203T 2001-02-01 2002-02-01 Herstellungsverfahren für optische vorrichtungen und verbesserungen ATE323328T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB0102536A GB2371919B (en) 2001-02-01 2001-02-01 Method of manufacturing optical devices and related improvements

Publications (1)

Publication Number Publication Date
ATE323328T1 true ATE323328T1 (de) 2006-04-15

Family

ID=9907921

Family Applications (1)

Application Number Title Priority Date Filing Date
AT02716203T ATE323328T1 (de) 2001-02-01 2002-02-01 Herstellungsverfahren für optische vorrichtungen und verbesserungen

Country Status (10)

Country Link
EP (1) EP1364392B1 (de)
JP (1) JP4210741B2 (de)
CN (1) CN1287424C (de)
AT (1) ATE323328T1 (de)
AU (1) AU2002226593A1 (de)
CA (1) CA2435964A1 (de)
DE (1) DE60210587T2 (de)
GB (1) GB2371919B (de)
RU (1) RU2291519C2 (de)
WO (1) WO2002061814A2 (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7723139B2 (en) * 2007-10-01 2010-05-25 Corning Incorporated Quantum well intermixing
EP2214272B1 (de) * 2007-11-21 2021-06-02 The Furukawa Electric Co., Ltd. Verfahren zur herstellung eines halbleiterbauelements, halbleiterbauelement, kommunikationsgerät und halbleiterlaser
WO2016118132A1 (en) 2015-01-22 2016-07-28 Hewlett Packard Enterprise Development Lp Monolithic wdm vcsel arrays by quantum well intermixing
US10868407B2 (en) 2015-06-04 2020-12-15 Hewlett Packard Enterprise Development Lp Monolithic WDM VCSELS with spatially varying gain peak and fabry perot wavelength
CN105390936B (zh) * 2015-11-26 2018-06-15 深圳瑞波光电子有限公司 一种外延结构及其制造方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5618388A (en) * 1988-02-08 1997-04-08 Optical Coating Laboratory, Inc. Geometries and configurations for magnetron sputtering apparatus
GB2372148A (en) * 2001-01-23 2002-08-14 Univ Glasgow A Method of Manufacturing an Optical Device

Also Published As

Publication number Publication date
EP1364392A2 (de) 2003-11-26
WO2002061814A2 (en) 2002-08-08
EP1364392B1 (de) 2006-04-12
CN1287424C (zh) 2006-11-29
GB2371919B (en) 2003-03-19
RU2291519C2 (ru) 2007-01-10
GB0102536D0 (en) 2001-03-21
JP4210741B2 (ja) 2009-01-21
DE60210587D1 (de) 2006-05-24
WO2002061814A3 (en) 2003-09-18
JP2004527106A (ja) 2004-09-02
CA2435964A1 (en) 2002-08-08
RU2003126493A (ru) 2005-02-20
DE60210587T2 (de) 2007-01-25
GB2371919A (en) 2002-08-07
CN1496579A (zh) 2004-05-12
AU2002226593A1 (en) 2002-08-12

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Legal Events

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