ATE304223T1 - BIPOLAR TRANSISTOR AND METHOD FOR THE PRODUCTION THEREOF - Google Patents

BIPOLAR TRANSISTOR AND METHOD FOR THE PRODUCTION THEREOF

Info

Publication number
ATE304223T1
ATE304223T1 AT99964430T AT99964430T ATE304223T1 AT E304223 T1 ATE304223 T1 AT E304223T1 AT 99964430 T AT99964430 T AT 99964430T AT 99964430 T AT99964430 T AT 99964430T AT E304223 T1 ATE304223 T1 AT E304223T1
Authority
AT
Austria
Prior art keywords
bipolar transistor
cap layer
high frequency
base
good high
Prior art date
Application number
AT99964430T
Other languages
German (de)
Inventor
Bernd Heinemann
Karl-Ernst Ehwald
Dieter Knoll
Original Assignee
Ihp Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ihp Gmbh filed Critical Ihp Gmbh
Application granted granted Critical
Publication of ATE304223T1 publication Critical patent/ATE304223T1/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/01—Manufacture or treatment
    • H10D10/021—Manufacture or treatment of heterojunction BJTs [HBT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/80—Heterojunction BJTs
    • H10D10/821—Vertical heterojunction BJTs
    • H10D10/891—Vertical heterojunction BJTs comprising lattice-mismatched active layers, e.g. SiGe strained-layer transistors

Landscapes

  • Bipolar Transistors (AREA)

Abstract

The aim of the invention is to provide for a bipolar transistor and a method for producing the same. Said bipolar transistor should have minimal base-emitter capacities and very good high frequency characteristics. The static characteristics, especially the base current ideality and the low frequency noise, of a bipolar transistor with weakly doped cap layer (116) should not significantly deteriorate and process complexity should not increase. According to the invention, the problem is solved by inserting a special doping profile in a cap layer (116) (cap doping) which has been produced epitaxially. A minimal base emitter capacity and very good high frequency characteristics can be obtained by means of said doping profile. At the same time, the efficiency of the generation/recombination active boundary surface between the cap layer (116) and the isolator (117) in the polysilicon overlapping area in the relevant working area of the transistor is reduced and the base current ideality is improved. The section at the base side in the cap layer (116) has a preferred thickness of between 20 nm and 70 nm and is only doped weakly, preferably less than 5.10<16 >cm<-3>. Said section is crucial for the good high frequency characteristics.
AT99964430T 1998-12-14 1999-12-08 BIPOLAR TRANSISTOR AND METHOD FOR THE PRODUCTION THEREOF ATE304223T1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19857640A DE19857640A1 (en) 1998-12-14 1998-12-14 Bipolar transistor and process for its manufacture
PCT/DE1999/003961 WO2000036653A1 (en) 1998-12-14 1999-12-08 Bipolar transistor and method for producing same

Publications (1)

Publication Number Publication Date
ATE304223T1 true ATE304223T1 (en) 2005-09-15

Family

ID=7891035

Family Applications (1)

Application Number Title Priority Date Filing Date
AT99964430T ATE304223T1 (en) 1998-12-14 1999-12-08 BIPOLAR TRANSISTOR AND METHOD FOR THE PRODUCTION THEREOF

Country Status (6)

Country Link
US (1) US6740560B1 (en)
EP (1) EP1153437B1 (en)
JP (1) JP2002532904A (en)
AT (1) ATE304223T1 (en)
DE (2) DE19857640A1 (en)
WO (1) WO2000036653A1 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6426265B1 (en) * 2001-01-30 2002-07-30 International Business Machines Corporation Incorporation of carbon in silicon/silicon germanium epitaxial layer to enhance yield for Si-Ge bipolar technology
DE10231407B4 (en) * 2002-07-11 2007-01-11 Infineon Technologies Ag bipolar transistor
US20100286626A1 (en) * 2007-12-21 2010-11-11 Petersen Scott R Longitudinally incompressible, laterally flexible interior shaft for catheter

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6037105A (en) 1983-08-09 1985-02-26 Kawasaki Steel Corp Unidirectional electromagnetic steel plate having low iron loss and manufacture thereof
JPS6221067A (en) 1985-07-19 1987-01-29 Koichi Yoshida Contact-type probe
US5648294A (en) * 1989-11-29 1997-07-15 Texas Instruments Incorp. Integrated circuit and method
US5250448A (en) * 1990-01-31 1993-10-05 Kabushiki Kaisha Toshiba Method of fabricating a miniaturized heterojunction bipolar transistor
JPH0541385A (en) * 1991-05-24 1993-02-19 Mitsubishi Electric Corp Semiconductor device and manufacture thereof
US5162243A (en) * 1991-08-30 1992-11-10 Trw Inc. Method of producing high reliability heterojunction bipolar transistors
JPH05182980A (en) * 1992-01-07 1993-07-23 Toshiba Corp Heterojunction bipolar transistor
US5177025A (en) * 1992-01-24 1993-01-05 Hewlett-Packard Company Method of fabricating an ultra-thin active region for high speed semiconductor devices
JP2582519B2 (en) * 1992-07-13 1997-02-19 インターナショナル・ビジネス・マシーンズ・コーポレイション Bipolar transistor and method of manufacturing the same
FR2693839B1 (en) * 1992-07-17 1994-09-02 Thomson Csf Method for producing a bipolar transistor.
US5298438A (en) * 1992-08-31 1994-03-29 Texas Instruments Incorporated Method of reducing extrinsic base-collector capacitance in bipolar transistors
DE4240738A1 (en) * 1992-12-03 1993-08-26 Siemens Ag Bipolar transistor prodn. for long service life - by forming base in surface of substrate, short term temp. adjusting, and forming emitter
JP3278493B2 (en) * 1993-05-24 2002-04-30 三菱電機株式会社 Semiconductor device and manufacturing method thereof
US5583059A (en) * 1994-06-01 1996-12-10 International Business Machines Corporation Fabrication of vertical SiGe base HBT with lateral collector contact on thin SOI
US5548158A (en) * 1994-09-02 1996-08-20 National Semiconductor Corporation Structure of bipolar transistors with improved output current-voltage characteristics
US5581115A (en) * 1994-10-07 1996-12-03 National Semiconductor Corporation Bipolar transistors using isolated selective doping to improve performance characteristics
US5620907A (en) * 1995-04-10 1997-04-15 Lucent Technologies Inc. Method for making a heterojunction bipolar transistor
JPH09181091A (en) * 1995-12-12 1997-07-11 Lucent Technol Inc Method for manufacturing heterojunction bipolar transistor
DE19609933A1 (en) * 1996-03-14 1997-09-18 Daimler Benz Ag Method of manufacturing a heterobipolar transistor
EP0818829A1 (en) * 1996-07-12 1998-01-14 Hitachi, Ltd. Bipolar transistor and method of fabricating it
JP3836189B2 (en) 1996-07-22 2006-10-18 シチズン時計株式会社 Semiconductor device, inspection method thereof, and electronic timepiece using the same
DE19755979A1 (en) * 1996-12-09 1999-06-10 Inst Halbleiterphysik Gmbh Silicon germanium heterobipolar transistor
US6020246A (en) * 1998-03-13 2000-02-01 National Semiconductor Corporation Forming a self-aligned epitaxial base bipolar transistor

Also Published As

Publication number Publication date
DE59912536D1 (en) 2005-10-13
WO2000036653A1 (en) 2000-06-22
EP1153437A1 (en) 2001-11-14
US6740560B1 (en) 2004-05-25
EP1153437B1 (en) 2005-09-07
DE19857640A1 (en) 2000-06-15
JP2002532904A (en) 2002-10-02

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