ATE232013T1 - Kathodenbogenquelle - Google Patents

Kathodenbogenquelle

Info

Publication number
ATE232013T1
ATE232013T1 AT97932940T AT97932940T ATE232013T1 AT E232013 T1 ATE232013 T1 AT E232013T1 AT 97932940 T AT97932940 T AT 97932940T AT 97932940 T AT97932940 T AT 97932940T AT E232013 T1 ATE232013 T1 AT E232013T1
Authority
AT
Austria
Prior art keywords
cathode arc
arc source
target
macroparticles
microns
Prior art date
Application number
AT97932940T
Other languages
English (en)
Inventor
Xu Shi
Beng Kang Tay
Hong Siang Tan
David Ian Flynn
Original Assignee
Filplas Vacuum Technology Pte
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Filplas Vacuum Technology Pte filed Critical Filplas Vacuum Technology Pte
Application granted granted Critical
Publication of ATE232013T1 publication Critical patent/ATE232013T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32055—Arc discharge
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0605—Carbon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
    • C23C14/325—Electric arc evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J27/00—Ion beam tubes
    • H01J27/02—Ion sources; Ion guns
    • H01J27/08—Ion sources; Ion guns using arc discharge
    • H01J27/14—Other arc discharge ion sources using an applied magnetic field
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32614—Consumable cathodes for arc discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Combustion & Propulsion (AREA)
  • Physical Vapour Deposition (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Microwave Tubes (AREA)
  • Cold Cathode And The Manufacture (AREA)
AT97932940T 1996-07-24 1997-07-24 Kathodenbogenquelle ATE232013T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GBGB9615548.6A GB9615548D0 (en) 1996-07-24 1996-07-24 Cathode arc source and graphite target
PCT/GB1997/001992 WO1998003988A2 (en) 1996-07-24 1997-07-24 Cathode arc source and graphite target

Publications (1)

Publication Number Publication Date
ATE232013T1 true ATE232013T1 (de) 2003-02-15

Family

ID=10797435

Family Applications (1)

Application Number Title Priority Date Filing Date
AT97932940T ATE232013T1 (de) 1996-07-24 1997-07-24 Kathodenbogenquelle

Country Status (9)

Country Link
US (1) US6761805B1 (de)
EP (2) EP1267384A3 (de)
JP (1) JP2000514950A (de)
CN (1) CN1132219C (de)
AT (1) ATE232013T1 (de)
AU (1) AU3630397A (de)
DE (1) DE69718794D1 (de)
GB (1) GB9615548D0 (de)
WO (1) WO1998003988A2 (de)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB9722650D0 (en) * 1997-10-24 1997-12-24 Univ Nanyang Cathode ARC source with target feeding apparatus
US6903511B2 (en) * 2003-05-06 2005-06-07 Zond, Inc. Generation of uniformly-distributed plasma
JP4373252B2 (ja) * 2004-03-16 2009-11-25 浩史 滝川 プラズマ生成装置
US20060177610A1 (en) * 2005-02-09 2006-08-10 Arrow International Limited Sealing of Plastic Containers
US7498587B2 (en) * 2006-05-01 2009-03-03 Vapor Technologies, Inc. Bi-directional filtered arc plasma source
CN100451160C (zh) * 2006-12-19 2009-01-14 哈尔滨工业大学 一种含有掺杂剂元素的石墨靶材的制备方法
CN101346030B (zh) * 2008-08-25 2011-09-14 哈尔滨工业大学 可控多元阴极弧等离子体形成装置及方法
DE102008057020A1 (de) * 2008-11-12 2010-05-20 Oerlikon Trading Ag, Trübbach Zündvorrichtung für Arc Quellen
US20100190036A1 (en) * 2009-01-27 2010-07-29 Kyriakos Komvopoulos Systems and Methods for Surface Modification by Filtered Cathodic Vacuum Arc
CN101494151B (zh) * 2009-03-05 2013-11-13 苏州晶能科技有限公司 高效率的一维线性等离子体清洗磁控阴极装置
JP5649308B2 (ja) * 2009-04-28 2015-01-07 株式会社神戸製鋼所 成膜速度が速いアーク式蒸発源及びこのアーク式蒸発源を用いた皮膜の製造方法
JP5868017B2 (ja) * 2010-04-14 2016-02-24 キヤノン株式会社 光学素子成形用型の製造方法および光学素子成形用型
JP5903818B2 (ja) * 2011-09-26 2016-04-13 富士通株式会社 化合物半導体装置及びその製造方法
SG10201705059TA (en) 2016-06-24 2018-01-30 Veeco Instr Inc Enhanced cathodic arc source for arc plasma deposition
US11926890B2 (en) * 2019-03-15 2024-03-12 Nanofilm Technologies International Limited Cathode arc source
CN113365402B (zh) * 2020-03-06 2023-04-07 上海宏澎能源科技有限公司 限制等离子束的装置
IL281747B2 (en) * 2021-03-22 2024-04-01 N T Tao Ltd System and method for creating plasma with high efficiency

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3517092A (en) * 1968-04-15 1970-06-23 Atomic Energy Commission Process for preparing high-density isotropic graphite structures
WO1985003954A1 (en) * 1984-03-02 1985-09-12 Regents Of The University Of Minnesota Controlled vacuum arc material deposition, method and apparatus
US5298136A (en) * 1987-08-18 1994-03-29 Regents Of The University Of Minnesota Steered arc coating with thick targets
US5336520A (en) * 1990-06-18 1994-08-09 The United States Of America As Represented By The United States Department Of Energy High density-high purity graphite prepared by hot isostatic pressing in refractory metal containers
JPH04124265A (ja) * 1990-09-12 1992-04-24 Anelva Corp スパッタリング装置および膜作製方法
JPH04236770A (ja) * 1991-01-17 1992-08-25 Kobe Steel Ltd 真空アーク蒸着のアークスポットの制御方法及び蒸発源
CA2065581C (en) * 1991-04-22 2002-03-12 Andal Corp. Plasma enhancement apparatus and method for physical vapor deposition
US5279723A (en) * 1992-07-30 1994-01-18 As Represented By The United States Department Of Energy Filtered cathodic arc source
US5539274A (en) * 1993-09-07 1996-07-23 Tokyo Electron Limited Electron beam excited plasma system
US5468363A (en) * 1994-04-25 1995-11-21 Regents Of The University Of California Magnetic-cusp, cathodic-arc source
KR100230279B1 (ko) * 1997-03-31 1999-11-15 윤종용 음극 아크 방전을 이용한 박막 증착장치
GB9722649D0 (en) * 1997-10-24 1997-12-24 Univ Nanyang Cathode ARC source for metallic and dielectric coatings
US6103074A (en) * 1998-02-14 2000-08-15 Phygen, Inc. Cathode arc vapor deposition method and apparatus

Also Published As

Publication number Publication date
GB9615548D0 (en) 1996-09-04
WO1998003988A2 (en) 1998-01-29
CN1132219C (zh) 2003-12-24
EP1267384A2 (de) 2002-12-18
JP2000514950A (ja) 2000-11-07
CN1235695A (zh) 1999-11-17
DE69718794D1 (de) 2003-03-06
EP1267384A3 (de) 2006-07-19
US6761805B1 (en) 2004-07-13
WO1998003988A3 (en) 1998-03-26
EP0914670B1 (de) 2003-01-29
AU3630397A (en) 1998-02-10
EP0914670A2 (de) 1999-05-12

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Legal Events

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