ATE212435T1 - Photonendetektor und verfahren zur herstellung des photonendetektors - Google Patents

Photonendetektor und verfahren zur herstellung des photonendetektors

Info

Publication number
ATE212435T1
ATE212435T1 AT97924964T AT97924964T ATE212435T1 AT E212435 T1 ATE212435 T1 AT E212435T1 AT 97924964 T AT97924964 T AT 97924964T AT 97924964 T AT97924964 T AT 97924964T AT E212435 T1 ATE212435 T1 AT E212435T1
Authority
AT
Austria
Prior art keywords
photon detector
producing
organo
metallic compounds
composite material
Prior art date
Application number
AT97924964T
Other languages
English (en)
Inventor
Hans Wilfried Peter Koops
Alexander Kaya
Original Assignee
Deutsche Telekom Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE19720926A external-priority patent/DE19720926A1/de
Application filed by Deutsche Telekom Ag filed Critical Deutsche Telekom Ag
Application granted granted Critical
Publication of ATE212435T1 publication Critical patent/ATE212435T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/085—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors the device being sensitive to very short wavelength, e.g. X-ray, Gamma-rays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Light Receiving Elements (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Measurement Of Radiation (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Apparatus For Radiation Diagnosis (AREA)
AT97924964T 1996-05-24 1997-05-21 Photonendetektor und verfahren zur herstellung des photonendetektors ATE212435T1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE19621175 1996-05-24
DE19720926A DE19720926A1 (de) 1996-05-24 1997-05-20 Photonendetektor und Verfahren zur Herstellung des Photonendetektors
PCT/EP1997/002576 WO1997045710A1 (de) 1996-05-24 1997-05-21 Photonendetektor und verfahren zur herstellung des photonendetektors

Publications (1)

Publication Number Publication Date
ATE212435T1 true ATE212435T1 (de) 2002-02-15

Family

ID=26026051

Family Applications (1)

Application Number Title Priority Date Filing Date
AT97924964T ATE212435T1 (de) 1996-05-24 1997-05-21 Photonendetektor und verfahren zur herstellung des photonendetektors

Country Status (8)

Country Link
US (1) US6246055B1 (de)
EP (1) EP0901613B1 (de)
JP (1) JP3953525B2 (de)
AT (1) ATE212435T1 (de)
CA (1) CA2255862C (de)
ES (1) ES2171944T3 (de)
PL (1) PL183653B1 (de)
WO (1) WO1997045710A1 (de)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7594443B2 (en) 2006-10-09 2009-09-29 The Board Of Regents, University Of Texas System Mechanically tunable optical-encoded force sensor
CN104756221B (zh) * 2012-09-07 2017-05-03 哈维尔克有限责任公司 纳米颗粒材料（ngm）材料、用于制造所述材料的方法和装置及包括所述材料的电部件

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4234671C2 (de) 1992-10-14 1997-06-05 Marquardt Peter Dr Ein- und mehrkomponentige lockere Netzwerkstrukturen aus Nanokristallen und ihre Verwendung als Detektoren, Sensoren und Wandler
US5446286A (en) * 1994-08-11 1995-08-29 Bhargava; Rameshwar N. Ultra-fast detectors using doped nanocrystal insulators
US5759230A (en) * 1995-11-30 1998-06-02 The United States Of America As Represented By The Secretary Of The Navy Nanostructured metallic powders and films via an alcoholic solvent process

Also Published As

Publication number Publication date
JP3953525B2 (ja) 2007-08-08
EP0901613A1 (de) 1999-03-17
WO1997045710A1 (de) 1997-12-04
CA2255862C (en) 2005-03-22
CA2255862A1 (en) 1997-12-04
JP2000511346A (ja) 2000-08-29
ES2171944T3 (es) 2002-09-16
PL183653B1 (pl) 2002-06-28
PL330083A1 (en) 1999-04-26
US6246055B1 (en) 2001-06-12
EP0901613B1 (de) 2002-01-23

Similar Documents

Publication Publication Date Title
AU721374B2 (en) Method and device for the deposit of at least one film of intrinsic microcrystalline or nanocrystalline hydrogenated silicon and photovoltaic cell obtained by this method
ATE395705T1 (de) Kohlenstoffmaterial zur herstellung von elektrisch leitfähigen materialien sowie deren verwendung
EP0175980A3 (de) Glimmentladung Verfahren zur Herstellung eines Kohlstoffüberzuges auf einem Substrat und die so hergestellten Überzüge
EP0863520A3 (de) Verfahren zur Herstellung einer Elektrode und dadurch hergestellte Durchflusskapazität
CA2289782A1 (en) Alkoxysilane/organic polymer composition for use in producing an insulating thin film and use thereof
DE69823532D1 (de) Plasma unterstütze chemische dampfabscheidung aus rohstoffen mit niedrigem dampfdruck
DE59408077D1 (de) Verfahren zur herstellung korrosionsgeschützter metallischer werkstoffe
AU2328399A (en) Apparatus and method for depositing a semiconductor material
EP0756334A3 (de) Lichtemittierende Vorrichtung, elektrische Vorrichtung, die diese lichtemittierende Vorrichtung enthält, und Methode zu deren Herstellung
CA2265968A1 (en) Plasma-treated carbon fibrils and method of making same
EP0986085A3 (de) Herstellungsverfahren für eine Kathode, eine Elektronenquelle und ein Bildereugungsgerät
Beilby et al. A pyrolytic carbon film electrode for voltammetry: Part V. characterization and comparison with the glassy carbon electrode by electrochemical pretreatment in basic solution
TW374770B (en) Method for depositing substituted fluorocarbon polymeric layers
EP0798102A3 (de) Selbstklebendes Prepreg, Verfahren zu seiner Herstellung und seine Verwendung
TW351770B (en) Shield layer, method for forming shield layer and producing substrate
ATE212435T1 (de) Photonendetektor und verfahren zur herstellung des photonendetektors
KR960034479A (ko) 산화물박막의 제조방법 및 그것에 사용되는 화학증착장치
TW367591B (en) Nanoporous dielectric films with graded density and process for making such films
ATE120439T1 (de) Verfahren zur abscheidung von dünnschichten.
AU7525587A (en) Process for the manufacture of floor or wall coverings incorporating pebbles, product obtained and plant intended for this purpose
DE3466883D1 (en) Tcnq complexes containing organic polymers stabilized against the emission of hcn
TW200506115A (en) Method for producing diamond film
JPH0421638B2 (de)
DK1169492T3 (da) Method of producing thin, poorly soluble coatings
Chen et al. Effect of surface reconstruction on the adsorption of Ge on clean Si (111)