ATA86897A - Feldeffekttransistor mit injektionsbegrenzendem sourcekontakt - Google Patents

Feldeffekttransistor mit injektionsbegrenzendem sourcekontakt

Info

Publication number
ATA86897A
ATA86897A AT86897A AT86897A ATA86897A AT A86897 A ATA86897 A AT A86897A AT 86897 A AT86897 A AT 86897A AT 86897 A AT86897 A AT 86897A AT A86897 A ATA86897 A AT A86897A
Authority
AT
Austria
Prior art keywords
injection
field effect
effect transistor
source contact
limiting source
Prior art date
Application number
AT86897A
Other languages
English (en)
Other versions
AT407451B (de
Inventor
Hartwig Dipl Ing Dr Thim
Kurt Dipl Ing Dr Luebke
Original Assignee
Hartwig Dipl Ing Dr Thim
Kurt Dipl Ing Dr Luebke
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hartwig Dipl Ing Dr Thim, Kurt Dipl Ing Dr Luebke filed Critical Hartwig Dipl Ing Dr Thim
Priority to AT86897A priority Critical patent/AT407451B/de
Publication of ATA86897A publication Critical patent/ATA86897A/de
Application granted granted Critical
Publication of AT407451B publication Critical patent/AT407451B/de

Links

AT86897A 1997-05-22 1997-05-22 Feldeffekttransistor mit injektionsbegrenzendem sourcekontakt AT407451B (de)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AT86897A AT407451B (de) 1997-05-22 1997-05-22 Feldeffekttransistor mit injektionsbegrenzendem sourcekontakt

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
AT86897A AT407451B (de) 1997-05-22 1997-05-22 Feldeffekttransistor mit injektionsbegrenzendem sourcekontakt

Publications (2)

Publication Number Publication Date
ATA86897A true ATA86897A (de) 2000-07-15
AT407451B AT407451B (de) 2001-03-26

Family

ID=3501666

Family Applications (1)

Application Number Title Priority Date Filing Date
AT86897A AT407451B (de) 1997-05-22 1997-05-22 Feldeffekttransistor mit injektionsbegrenzendem sourcekontakt

Country Status (1)

Country Link
AT (1) AT407451B (de)

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3740666A (en) * 1970-12-16 1973-06-19 H Thim Circuit for suppressing the formation of high field domains in an overcritically doped gunn-effect diode
JPH0496375A (ja) * 1990-08-14 1992-03-27 Fujitsu Ltd 半導体装置
JPH0496374A (ja) * 1990-08-14 1992-03-27 Fujitsu Ltd 半導体装置
JP2731089B2 (ja) * 1991-10-02 1998-03-25 三菱電機株式会社 高速動作半導体装置およびその製造方法
US5179037A (en) * 1991-12-24 1993-01-12 Texas Instruments Incorporated Integration of lateral and vertical quantum well transistors in the same epitaxial stack

Also Published As

Publication number Publication date
AT407451B (de) 2001-03-26

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