ATA815379A - Freitragende maske, verfahren zur herstellung derselben und verfahren zum maskieren von substraten - Google Patents

Freitragende maske, verfahren zur herstellung derselben und verfahren zum maskieren von substraten

Info

Publication number
ATA815379A
ATA815379A AT0815379A AT815379A ATA815379A AT A815379 A ATA815379 A AT A815379A AT 0815379 A AT0815379 A AT 0815379A AT 815379 A AT815379 A AT 815379A AT A815379 A ATA815379 A AT A815379A
Authority
AT
Austria
Prior art keywords
producing
same
supporting mask
masking substrates
masking
Prior art date
Application number
AT0815379A
Other languages
English (en)
Other versions
AT371947B (de
Original Assignee
Rudolf Sacher Ges M B H
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rudolf Sacher Ges M B H filed Critical Rudolf Sacher Ges M B H
Priority to AT0815379A priority Critical patent/AT371947B/de
Priority to DE19803044257 priority patent/DE3044257A1/de
Priority to US06/217,064 priority patent/US4370556A/en
Priority to GB8041219A priority patent/GB2067785B/en
Priority to FR8027456A priority patent/FR2475787A1/fr
Priority to JP18496080A priority patent/JPS56120129A/ja
Publication of ATA815379A publication Critical patent/ATA815379A/de
Application granted granted Critical
Publication of AT371947B publication Critical patent/AT371947B/de

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/20—Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
    • G21K1/10—Scattering devices; Absorbing devices; Ionising radiation filters

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Electron Beam Exposure (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
AT0815379A 1979-12-27 1979-12-27 Freitragende maske, verfahren zur herstellung derselben und verfahren zum maskieren von substraten AT371947B (de)

Priority Applications (6)

Application Number Priority Date Filing Date Title
AT0815379A AT371947B (de) 1979-12-27 1979-12-27 Freitragende maske, verfahren zur herstellung derselben und verfahren zum maskieren von substraten
DE19803044257 DE3044257A1 (de) 1979-12-27 1980-11-25 Freitragende maske, verfahren zur herstellung sowie verwendung derselben
US06/217,064 US4370556A (en) 1979-12-27 1980-12-16 Self-supporting mask, method for production as well as use of same
GB8041219A GB2067785B (en) 1979-12-27 1980-12-23 Masks
FR8027456A FR2475787A1 (fr) 1979-12-27 1980-12-24 Masque en porte-a-faux et procedes de fabrication et d'application de ce dernier, en particulier pour le traitement des substrats par irradiation ou flux de particules
JP18496080A JPS56120129A (en) 1979-12-27 1980-12-25 Mask without support and method of manufacturing same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
AT0815379A AT371947B (de) 1979-12-27 1979-12-27 Freitragende maske, verfahren zur herstellung derselben und verfahren zum maskieren von substraten

Publications (2)

Publication Number Publication Date
ATA815379A true ATA815379A (de) 1982-12-15
AT371947B AT371947B (de) 1983-08-10

Family

ID=3603035

Family Applications (1)

Application Number Title Priority Date Filing Date
AT0815379A AT371947B (de) 1979-12-27 1979-12-27 Freitragende maske, verfahren zur herstellung derselben und verfahren zum maskieren von substraten

Country Status (6)

Country Link
US (1) US4370556A (de)
JP (1) JPS56120129A (de)
AT (1) AT371947B (de)
DE (1) DE3044257A1 (de)
FR (1) FR2475787A1 (de)
GB (1) GB2067785B (de)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2159322A (en) * 1984-05-18 1985-11-27 Philips Electronic Associated Electron image projector
ATA331085A (de) * 1985-11-13 1994-05-15 Ims Ionen Mikrofab Syst Teilchen- oder strahlenbelastbare maske und verfahren zur herstellung derselben
ATA331185A (de) * 1985-11-13 1994-05-15 Ims Ionen Mikrofab Syst Verfahren zum stabilisieren von masken
DE3601632A1 (de) * 1986-01-21 1987-07-23 Leybold Heraeus Gmbh & Co Kg Verfahren zum herstellen von extraktionsgittern fuer ionenquellen und durch das verfahren hergestellte extraktionsgitter
AT393333B (de) * 1986-11-27 1991-09-25 Ims Ionen Mikrofab Syst Ionenprojektionseinrichtung fuer schattenprojektion
JPH052560Y2 (de) * 1987-04-15 1993-01-21
US4827138A (en) * 1988-02-26 1989-05-02 Texas Instruments Incorporated Filled grid mask
GB2241795A (en) * 1989-10-21 1991-09-11 British Aerospace Mask and method for the production of grooves or ribs in or on a surface.
GB2277998A (en) * 1993-05-13 1994-11-16 Marconi Gec Ltd Mask and apparatus for producing microlenses
AU2002951005A0 (en) * 2002-08-27 2002-09-12 Shell Internationale Research Maatschappij B.V. Method of removing carbon dioxide fouling from cryogenic equipment
JP4037809B2 (ja) * 2003-08-20 2008-01-23 日本電子株式会社 イオンミーリング試料作製装置用マスクおよび試料作製装置
DE102006051550B4 (de) * 2006-10-30 2012-02-02 Fhr Anlagenbau Gmbh Verfahren und Vorrichtung zum Strukturieren von Bauteilen unter Verwendung eines Werkstoffs auf der Basis von Siliziumoxid
JP2010113315A (ja) * 2008-10-10 2010-05-20 Jsr Corp フォトマスク
DE102010015124A1 (de) * 2010-04-16 2011-10-20 Karlsruher Institut für Technologie Röntgenlithographiemaske aus Nickel oder einer Nickelbasislegierung

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB610228A (en) * 1945-03-31 1948-10-13 Marconi Wireless Telegraph Co Improvements relating to the manufacture of fine mesh screens
US3227880A (en) * 1963-08-29 1966-01-04 Bbc Brown Boveri & Cie Collimator for beams of high-velocity electrons
US3529960A (en) * 1967-01-24 1970-09-22 Hilbert Sloan Methods of treating resist coatings
NL6807091A (de) * 1968-05-18 1969-11-20
JPS5013833Y2 (de) * 1971-08-27 1975-04-26
US3742230A (en) * 1972-06-29 1973-06-26 Massachusetts Inst Technology Soft x-ray mask support substrate
DE2416186C3 (de) * 1974-04-03 1978-12-21 Siemens Ag, 1000 Berlin Und 8000 Muenchen Maske zur Strukturierung dünner Schichten
DE2643811C2 (de) * 1975-10-28 1981-10-15 Hughes Aircraft Co., Culver City, Calif. Lithographie-Maske mit einer für Strahlung durchlässigen Membran und Verfahren zu ihrer Herstellung
US4037111A (en) * 1976-06-08 1977-07-19 Bell Telephone Laboratories, Incorporated Mask structures for X-ray lithography
GB1578259A (en) * 1977-05-11 1980-11-05 Philips Electronic Associated Methods of manufacturing solid-state devices apparatus for use therein and devices manufactured thereby
JPS53144676A (en) * 1977-05-23 1978-12-16 Nippon Telegr & Teleph Corp <Ntt> Electron beam mask and production of the same
US4171489A (en) * 1978-09-13 1979-10-16 Bell Telephone Laboratories, Incorporated Radiation mask structure

Also Published As

Publication number Publication date
JPS6331099B2 (de) 1988-06-22
AT371947B (de) 1983-08-10
US4370556A (en) 1983-01-25
FR2475787A1 (fr) 1981-08-14
DE3044257A1 (de) 1981-07-02
GB2067785B (en) 1984-03-14
GB2067785A (en) 1981-07-30
JPS56120129A (en) 1981-09-21

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Legal Events

Date Code Title Description
EIH Change in the person of patent owner
ELJ Ceased due to non-payment of the annual fee