ATA662077A - Verfahren zum verringern der dicke von siliziumscheiben durch chemisches aetzen - Google Patents
Verfahren zum verringern der dicke von siliziumscheiben durch chemisches aetzenInfo
- Publication number
- ATA662077A ATA662077A AT662077A AT662077A ATA662077A AT A662077 A ATA662077 A AT A662077A AT 662077 A AT662077 A AT 662077A AT 662077 A AT662077 A AT 662077A AT A662077 A ATA662077 A AT A662077A
- Authority
- AT
- Austria
- Prior art keywords
- reducing
- thickness
- chemical etching
- windows
- silicone
- Prior art date
Links
- 238000003486 chemical etching Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 229920001296 polysiloxane Polymers 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
Landscapes
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- General Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Weting (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| HU77EE2503A HU174296B (hu) | 1977-05-18 | 1977-05-18 | Sposob khimicheskogo travlenija kremnistoj poverkhnosti |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| ATA662077A true ATA662077A (de) | 1984-09-15 |
| AT377868B AT377868B (de) | 1985-05-10 |
Family
ID=10995727
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT662077A AT377868B (de) | 1977-05-18 | 1977-09-14 | Verfahren zum verringern der dicke von siliziumscheiben durch chemisches aetzen |
Country Status (2)
| Country | Link |
|---|---|
| AT (1) | AT377868B (de) |
| HU (1) | HU174296B (de) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3728693A1 (de) * | 1987-08-27 | 1989-03-09 | Wacker Chemitronic | Verfahren und vorrichtung zum aetzen von halbleiteroberflaechen |
-
1977
- 1977-05-18 HU HU77EE2503A patent/HU174296B/hu not_active IP Right Cessation
- 1977-09-14 AT AT662077A patent/AT377868B/de not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| AT377868B (de) | 1985-05-10 |
| HU174296B (hu) | 1979-12-28 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ELJ | Ceased due to non-payment of the annual fee |