AT349530B - Feldeffekt-transistoranordnung mit wider- standsschicht - Google Patents
Feldeffekt-transistoranordnung mit wider- standsschichtInfo
- Publication number
- AT349530B AT349530B AT746773A AT746773A AT349530B AT 349530 B AT349530 B AT 349530B AT 746773 A AT746773 A AT 746773A AT 746773 A AT746773 A AT 746773A AT 349530 B AT349530 B AT 349530B
- Authority
- AT
- Austria
- Prior art keywords
- field effect
- effect transistor
- resistor layer
- transistor arrangement
- arrangement
- Prior art date
Links
- 230000005669 field effect Effects 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/435—Resistive materials for field effect devices, e.g. resistive gate for MOSFET or MESFET
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Junction Field-Effect Transistors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8595072A JPS4941081A (ko) | 1972-08-28 | 1972-08-28 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| ATA746773A ATA746773A (de) | 1978-09-15 |
| AT349530B true AT349530B (de) | 1979-04-10 |
Family
ID=13873026
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT746773A AT349530B (de) | 1972-08-28 | 1973-08-28 | Feldeffekt-transistoranordnung mit wider- standsschicht |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JPS4941081A (ko) |
| AT (1) | AT349530B (ko) |
| DE (1) | DE2343206A1 (ko) |
| GB (1) | GB1432989A (ko) |
| NL (1) | NL7311854A (ko) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| IL50821A (en) * | 1975-12-03 | 1978-10-31 | Hughes Aircraft Co | Resistive gate mos switch |
| DE10350702B4 (de) * | 2003-10-30 | 2007-08-09 | Infineon Technologies Ag | Halbleiterbauelement mit einer kapazitiven, gegenüber Fehlern einer Dielektrikusschicht robusten Struktur |
-
1972
- 1972-08-28 JP JP8595072A patent/JPS4941081A/ja active Pending
-
1973
- 1973-08-27 DE DE19732343206 patent/DE2343206A1/de active Granted
- 1973-08-28 NL NL7311854A patent/NL7311854A/xx not_active Application Discontinuation
- 1973-08-28 AT AT746773A patent/AT349530B/de not_active IP Right Cessation
- 1973-08-28 GB GB4043973A patent/GB1432989A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| DE2343206A1 (de) | 1974-03-14 |
| NL7311854A (ko) | 1974-03-04 |
| GB1432989A (en) | 1976-04-22 |
| DE2343206C2 (ko) | 1987-05-21 |
| JPS4941081A (ko) | 1974-04-17 |
| ATA746773A (de) | 1978-09-15 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ELA | Expired due to lapse of time |