JPS4941081A - - Google Patents

Info

Publication number
JPS4941081A
JPS4941081A JP8595072A JP8595072A JPS4941081A JP S4941081 A JPS4941081 A JP S4941081A JP 8595072 A JP8595072 A JP 8595072A JP 8595072 A JP8595072 A JP 8595072A JP S4941081 A JPS4941081 A JP S4941081A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8595072A
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP8595072A priority Critical patent/JPS4941081A/ja
Priority to DE19732343206 priority patent/DE2343206A1/de
Priority to NL7311854A priority patent/NL7311854A/xx
Priority to GB4043973A priority patent/GB1432989A/en
Priority to AT746773A priority patent/AT349530B/de
Publication of JPS4941081A publication Critical patent/JPS4941081A/ja
Priority to US05/504,503 priority patent/US3999210A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/435—Resistive materials for field effect devices, e.g. resistive gate for MOSFET or MESFET

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Junction Field-Effect Transistors (AREA)
JP8595072A 1972-08-28 1972-08-28 Pending JPS4941081A (ko)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP8595072A JPS4941081A (ko) 1972-08-28 1972-08-28
DE19732343206 DE2343206A1 (de) 1972-08-28 1973-08-27 Feldeffekt-transistoranordnung
NL7311854A NL7311854A (ko) 1972-08-28 1973-08-28
GB4043973A GB1432989A (en) 1972-08-28 1973-08-28 Field effect transistors
AT746773A AT349530B (de) 1972-08-28 1973-08-28 Feldeffekt-transistoranordnung mit wider- standsschicht
US05/504,503 US3999210A (en) 1972-08-28 1974-09-09 FET having a linear impedance characteristic over a wide range of frequency

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8595072A JPS4941081A (ko) 1972-08-28 1972-08-28

Publications (1)

Publication Number Publication Date
JPS4941081A true JPS4941081A (ko) 1974-04-17

Family

ID=13873026

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8595072A Pending JPS4941081A (ko) 1972-08-28 1972-08-28

Country Status (5)

Country Link
JP (1) JPS4941081A (ko)
AT (1) AT349530B (ko)
DE (1) DE2343206A1 (ko)
GB (1) GB1432989A (ko)
NL (1) NL7311854A (ko)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IL50821A (en) * 1975-12-03 1978-10-31 Hughes Aircraft Co Resistive gate mos switch
DE10350702B4 (de) * 2003-10-30 2007-08-09 Infineon Technologies Ag Halbleiterbauelement mit einer kapazitiven, gegenüber Fehlern einer Dielektrikusschicht robusten Struktur

Also Published As

Publication number Publication date
AT349530B (de) 1979-04-10
ATA746773A (de) 1978-09-15
DE2343206C2 (ko) 1987-05-21
DE2343206A1 (de) 1974-03-14
NL7311854A (ko) 1974-03-04
GB1432989A (en) 1976-04-22

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