AT348020B - Verfahren zum dotieren eines siliziumkristalls durch eindiffundieren von bor bzw. von phosphor - Google Patents

Verfahren zum dotieren eines siliziumkristalls durch eindiffundieren von bor bzw. von phosphor

Info

Publication number
AT348020B
AT348020B AT1072370A AT1072370A AT348020B AT 348020 B AT348020 B AT 348020B AT 1072370 A AT1072370 A AT 1072370A AT 1072370 A AT1072370 A AT 1072370A AT 348020 B AT348020 B AT 348020B
Authority
AT
Austria
Prior art keywords
bor
diffusing
doping
phosphorus
silicon crystal
Prior art date
Application number
AT1072370A
Other languages
English (en)
Other versions
ATA1072370A (de
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of ATA1072370A publication Critical patent/ATA1072370A/de
Application granted granted Critical
Publication of AT348020B publication Critical patent/AT348020B/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/02—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion materials in the solid state
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H10P95/00—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/043—Dual dielectric
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/049—Equivalence and options
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/151—Simultaneous diffusion
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/914—Doping
    • Y10S438/92—Controlling diffusion profile by oxidation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Formation Of Insulating Films (AREA)
AT1072370A 1970-02-16 1970-11-27 Verfahren zum dotieren eines siliziumkristalls durch eindiffundieren von bor bzw. von phosphor AT348020B (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2006994A DE2006994C3 (de) 1970-02-16 1970-02-16 Verfahren zum Dotieren eines Siliciumkristalls mit Bor oder Phosphor

Publications (2)

Publication Number Publication Date
ATA1072370A ATA1072370A (de) 1978-06-15
AT348020B true AT348020B (de) 1979-01-25

Family

ID=5762409

Family Applications (1)

Application Number Title Priority Date Filing Date
AT1072370A AT348020B (de) 1970-02-16 1970-11-27 Verfahren zum dotieren eines siliziumkristalls durch eindiffundieren von bor bzw. von phosphor

Country Status (10)

Country Link
US (1) US3764412A (de)
JP (1) JPS5412790B1 (de)
AT (1) AT348020B (de)
CA (1) CA965689A (de)
CH (1) CH544577A (de)
DE (1) DE2006994C3 (de)
FR (1) FR2078594A5 (de)
GB (1) GB1328925A (de)
NL (1) NL7102049A (de)
SE (1) SE373757B (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1503017A (en) * 1974-02-28 1978-03-08 Tokyo Shibaura Electric Co Method of manufacturing semiconductor devices
US6300228B1 (en) * 1999-08-30 2001-10-09 International Business Machines Corporation Multiple precipitation doping process
WO2007020833A1 (ja) * 2005-08-12 2007-02-22 Sharp Kabushiki Kaisha マスキングペースト、その製造方法およびマスキングペーストを用いた太陽電池の製造方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3391035A (en) * 1965-08-20 1968-07-02 Westinghouse Electric Corp Method of making p-nu-junction devices by diffusion

Also Published As

Publication number Publication date
DE2006994B2 (de) 1977-12-29
JPS5412790B1 (de) 1979-05-25
FR2078594A5 (de) 1971-11-05
DE2006994C3 (de) 1978-08-24
SE373757B (de) 1975-02-17
NL7102049A (de) 1971-08-18
ATA1072370A (de) 1978-06-15
US3764412A (en) 1973-10-09
DE2006994A1 (de) 1971-09-02
CH544577A (de) 1973-11-30
CA965689A (en) 1975-04-08
GB1328925A (en) 1973-09-05

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Legal Events

Date Code Title Description
ELJ Ceased due to non-payment of the annual fee