AT272427B - Thermoelectric semiconductor device - Google Patents

Thermoelectric semiconductor device

Info

Publication number
AT272427B
AT272427B AT403065A AT403065A AT272427B AT 272427 B AT272427 B AT 272427B AT 403065 A AT403065 A AT 403065A AT 403065 A AT403065 A AT 403065A AT 272427 B AT272427 B AT 272427B
Authority
AT
Austria
Prior art keywords
semiconductor device
thermoelectric semiconductor
thermoelectric
semiconductor
Prior art date
Application number
AT403065A
Other languages
German (de)
Original Assignee
Plessey Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Plessey Co Ltd filed Critical Plessey Co Ltd
Application granted granted Critical
Publication of AT272427B publication Critical patent/AT272427B/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/185Joining of semiconductor bodies for junction formation
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/01Manufacture or treatment
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/10Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
    • H10N10/17Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the structure or configuration of the cell or thermocouple forming the device
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80Constructional details
    • H10N10/85Thermoelectric active materials
    • H10N10/851Thermoelectric active materials comprising inorganic compositions
    • H10N10/855Thermoelectric active materials comprising inorganic compositions comprising compounds containing boron, carbon, oxygen or nitrogen
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80Constructional details
    • H10N10/85Thermoelectric active materials
    • H10N10/851Thermoelectric active materials comprising inorganic compositions
    • H10N10/8556Thermoelectric active materials comprising inorganic compositions comprising compounds containing germanium or silicon

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Powder Metallurgy (AREA)
  • Silicon Compounds (AREA)
AT403065A 1964-05-01 1965-05-03 Thermoelectric semiconductor device AT272427B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB18161/64A GB1118183A (en) 1964-05-01 1964-05-01 Improvements in or relating to thermoelectric devices

Publications (1)

Publication Number Publication Date
AT272427B true AT272427B (en) 1969-07-10

Family

ID=10107694

Family Applications (1)

Application Number Title Priority Date Filing Date
AT403065A AT272427B (en) 1964-05-01 1965-05-03 Thermoelectric semiconductor device

Country Status (6)

Country Link
AT (1) AT272427B (en)
CH (1) CH435391A (en)
DE (1) DE1489277A1 (en)
FR (1) FR1440199A (en)
GB (1) GB1118183A (en)
NL (1) NL6505569A (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT1042975B (en) * 1975-09-30 1980-01-30 Snam Progetti METHOD FOR THE CONSTRUCTION OF A THERMOELECTRIC MODULE AND MODULE SO OBTAINED
JPH0628246B2 (en) * 1988-07-08 1994-04-13 コマツ電子金属株式会社 Method for producing silicon-germanium alloy
EP1780807B1 (en) * 2004-07-01 2013-02-27 Universal Entertainment Corporation Thermoelectric conversion module
DE102012205098B4 (en) * 2012-03-29 2020-04-02 Evonik Operations Gmbh Thermoelectric components based on dry pressed powder precursors
PL3196951T3 (en) 2016-01-21 2019-07-31 Evonik Degussa Gmbh Rational method for the powder metallurgical production of thermoelectric components

Also Published As

Publication number Publication date
FR1440199A (en) 1966-05-27
NL6505569A (en) 1965-11-02
DE1489277A1 (en) 1969-01-02
CH435391A (en) 1967-05-15
GB1118183A (en) 1968-06-26

Similar Documents

Publication Publication Date Title
FR1460816A (en) Semiconductor device
AT268404B (en) Thermoelectric device
CH432661A (en) Semiconductor device
AT263105B (en) Thermoelectric device
AT263084B (en) Semiconductor device
CH470085A (en) Semiconductor device
AT264589B (en) Semiconductor device
CH428009A (en) Semiconductor element
AT269217B (en) Semiconductor device
BR6571096D0 (en) SEMICONDUCTOR DEVICES
FR1423235A (en) Semiconductor device
CH437539A (en) Semiconductor device
FR1440443A (en) Semiconductor device
CH424995A (en) Semiconductor device
AT268405B (en) Thermoelectric device
FR1454612A (en) Semiconductor device
AT272427B (en) Thermoelectric semiconductor device
FI42348C (en) Unilaterally cooled semiconductor device
AT273227B (en) Semiconductor device
CH422168A (en) Semiconductor device
AT264623B (en) Semiconductor thermoelectric device
AT254987B (en) Semiconductor device
CH443492A (en) Semiconductor device
FR1440927A (en) semiconductor element
FR1440576A (en) Semiconductor device