AT269218B - Gunn-Effekt-Vorrichtung - Google Patents

Gunn-Effekt-Vorrichtung

Info

Publication number
AT269218B
AT269218B AT807266A AT807266A AT269218B AT 269218 B AT269218 B AT 269218B AT 807266 A AT807266 A AT 807266A AT 807266 A AT807266 A AT 807266A AT 269218 B AT269218 B AT 269218B
Authority
AT
Austria
Prior art keywords
effect device
gunn effect
gunn
effect
Prior art date
Application number
AT807266A
Other languages
German (de)
English (en)
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Application granted granted Critical
Publication of AT269218B publication Critical patent/AT269218B/de

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N80/00Bulk negative-resistance effect devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N80/00Bulk negative-resistance effect devices
    • H10N80/10Gunn-effect devices
    • H10W20/40
    • H10W72/90
    • H10W72/536
    • H10W72/5522
    • H10W72/59
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/05Etch and refill
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/056Gallium arsenide
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/085Isolated-integrated
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/15Silicon on sapphire SOS
AT807266A 1965-08-26 1966-08-25 Gunn-Effekt-Vorrichtung AT269218B (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB36655/65A GB1161782A (en) 1965-08-26 1965-08-26 Improvements in Semiconductor Devices.

Publications (1)

Publication Number Publication Date
AT269218B true AT269218B (de) 1969-03-10

Family

ID=10390066

Family Applications (1)

Application Number Title Priority Date Filing Date
AT807266A AT269218B (de) 1965-08-26 1966-08-25 Gunn-Effekt-Vorrichtung

Country Status (11)

Country Link
US (1) US3443169A (show.php)
AT (1) AT269218B (show.php)
BE (1) BE686070A (show.php)
CH (1) CH455960A (show.php)
DE (1) DE1541505A1 (show.php)
DK (1) DK117164B (show.php)
ES (1) ES330535A1 (show.php)
FR (1) FR1517751A (show.php)
GB (1) GB1161782A (show.php)
NL (1) NL6611943A (show.php)
SE (1) SE338106B (show.php)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3534267A (en) * 1966-12-30 1970-10-13 Texas Instruments Inc Integrated 94 ghz. local oscillator and mixer
US3691481A (en) * 1967-08-22 1972-09-12 Kogyo Gijutsuin Negative resistance element
US3518749A (en) * 1968-02-23 1970-07-07 Rca Corp Method of making gunn-effect devices
NL6809255A (show.php) * 1968-06-29 1969-12-31
US3967305A (en) * 1969-03-27 1976-06-29 Mcdonnell Douglas Corporation Multichannel junction field-effect transistor and process
US3660733A (en) * 1969-10-29 1972-05-02 Fernando Zhozevich Vilf Homogeneous semiconductor with interrelated antibarrier contacts
US3755752A (en) * 1971-04-26 1973-08-28 Raytheon Co Back-to-back semiconductor high frequency device
US4238763A (en) * 1977-08-10 1980-12-09 National Research Development Corporation Solid state microwave devices with small active contact and large passive contact
DE2837283C2 (de) * 1978-08-25 1980-08-28 Siemens Ag, 1000 Berlin Und 8000 Muenchen Planare, in eine Wellenleitung eingefügte Schottky-Diode für hohe Grenzfrequenz
CN107017310B (zh) * 2017-03-17 2020-01-07 山东大学 一种高功率低噪音的平面耿氏二极管及其制备方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL121810C (show.php) * 1955-11-04
US3065391A (en) * 1961-01-23 1962-11-20 Gen Electric Semiconductor devices
GB1070261A (en) * 1963-06-10 1967-06-01 Ibm A semiconductor device
US3290753A (en) * 1963-08-19 1966-12-13 Bell Telephone Labor Inc Method of making semiconductor integrated circuit elements
US3359504A (en) * 1964-03-25 1967-12-19 Westinghouse Electric Corp Inductanceless frequency selective signal system utilizing transport delay
US3322581A (en) * 1965-10-24 1967-05-30 Texas Instruments Inc Fabrication of a metal base transistor

Also Published As

Publication number Publication date
SE338106B (show.php) 1971-08-30
GB1161782A (en) 1969-08-20
US3443169A (en) 1969-05-06
BE686070A (show.php) 1967-02-27
NL6611943A (show.php) 1967-02-27
CH455960A (de) 1968-05-15
DE1541505A1 (de) 1970-04-02
DK117164B (da) 1970-03-23
FR1517751A (fr) 1968-03-22
ES330535A1 (es) 1967-09-16

Similar Documents

Publication Publication Date Title
AT294304B (de) Injektionsvorrichtung
NL155130B (nl) Halfgeleiderinrichting.
CH457284A (de) Trocknungsvorrichtung
AT263084B (de) Halbleitervorrichtung
AT308391B (de) Vorplastifiziervorrichtung
CH439617A (de) Tragvorrichtung
AT264589B (de) Halbleiteranordnung
AT269217B (de) Halbleitervorrichtung
CH437539A (de) Halbleiteranordnung
AT269218B (de) Gunn-Effekt-Vorrichtung
BR6683665D0 (pt) Riscador
AT278718B (de) Mischvorrichtung
AT273227B (de) Halbleitervorrichtung
AT275934B (de) Rauchspitz
AT268093B (de) Rasiermesserförmiges Gerät
AT254987B (de) Halbleiteranordnung
DE6602334U (de) Transistor
AT282421B (de) Ringlaeufer
CH443492A (de) Halbleiteranordnung
CH453401A (fr) Calorifère
CH460184A (de) Transistor
AT291341B (de) Gunn-Effekt Vorrichtung
AT262637B (de) Zeichengerät
CH407339A (fr) Transistor
FR1471636A (fr) Structure de transistor