WO2014041614A1 - Organic el device - Google Patents

Organic el device Download PDF

Info

Publication number
WO2014041614A1
WO2014041614A1 PCT/JP2012/073236 JP2012073236W WO2014041614A1 WO 2014041614 A1 WO2014041614 A1 WO 2014041614A1 JP 2012073236 W JP2012073236 W JP 2012073236W WO 2014041614 A1 WO2014041614 A1 WO 2014041614A1
Authority
WO
WIPO (PCT)
Prior art keywords
organic
substrate
wiring
region
mask
Prior art date
Application number
PCT/JP2012/073236
Other languages
French (fr)
Japanese (ja)
Inventor
青木 謙治
弘務 奈良
Original Assignee
パイオニア株式会社
東北パイオニア株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by パイオニア株式会社, 東北パイオニア株式会社 filed Critical パイオニア株式会社
Priority to PCT/JP2012/073236 priority Critical patent/WO2014041614A1/en
Publication of WO2014041614A1 publication Critical patent/WO2014041614A1/en

Links

Images

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80Constructional details
    • H10K59/88Dummy elements, i.e. elements having non-functional features
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10OLED displays
    • H10K59/17Passive-matrix OLED displays
    • H10K59/173Passive-matrix OLED displays comprising banks or shadow masks
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10OLED displays
    • H10K59/17Passive-matrix OLED displays
    • H10K59/179Interconnections, e.g. wiring lines or terminals

Definitions

  • the present invention relates to an organic EL device.
  • a method for forming a desired pattern by mask vapor deposition is known. For example, in a case where a plurality of organic EL elements having different emission colors are formed on one substrate to perform color display or white illumination, a plurality of masks having an opening pattern corresponding to a deposition pattern for each emission color are used, and electrodes In addition, a deposition pattern for each emission color is sequentially formed on the substrate on which the wiring is formed. At this time, if the mask placed facing the substrate comes into contact with the previously formed vapor deposition film, the vapor deposition film may be damaged. Therefore, a spacer is interposed between the mask and the substrate so that the mask and the vapor deposition film on the substrate In general, avoiding the contact is performed (see, for example, Patent Document 1 below).
  • the substrate and the mask In order to suppress the aforementioned evaporation blur, it is necessary to arrange the substrate and the mask as close as possible.
  • As means for arranging the substrate and the mask close to each other it has been proposed to provide a protrusion in the vicinity of the opening of the mask or to support the mask using the cathode partition of the organic EL element.
  • the mask in the organic EL element formation region (hereinafter referred to as element formation region), the mask can be disposed close to the substrate without bringing the mask into contact with the substrate surface.
  • the edge portion of the mask easily comes into contact with the wiring (for example, the lead wiring) formed outside the element formation region.
  • the mask for forming a uniform vapor deposition film over the entire area of the element formation region is not supported in the element formation area because the entire area of the element formation area is opened.
  • the present invention is an example of a problem to deal with such a problem. That is, in an organic EL device that forms an organic layer by mask vapor deposition, it is an object of the present invention to suppress vapor deposition blur, suppress damage to wiring on a substrate, and the like.
  • the organic EL device according to the present invention has at least the following configuration.
  • FIGS. 3A and 3B are explanatory views showing a specific arrangement and form of protrusions in an organic EL device according to an embodiment of the present invention (FIG. 3A is a plan view, FIG. 3B is a cross-sectional view taken along line X1-X1, FIG. 3C is a sectional view taken along line X2-X2.
  • FIG. 1 is an explanatory plan view showing a substrate of an organic EL device according to an embodiment of the present invention
  • FIG. 2 is an explanatory sectional view showing a part of the organic EL device according to an embodiment of the present invention. is there.
  • the organic EL device 1 is formed outside the substrate 10, one or more organic EL elements 1 ⁇ / b> U formed on the substrate 10, and a region where the organic EL element 1 ⁇ / b> U is formed on the substrate 10 (element formation region A).
  • Wiring 20 is provided.
  • wiring formation region B In the region of the substrate 10 where the wiring 20 is formed (wiring formation region B), a protruding portion 30 that protrudes at least to a position higher than the surface of the wiring 20 is provided.
  • the mask and the substrate 10 can be disposed close to each other by bringing the mask into contact with the protruding portion 30. Thereby, the vapor deposition pattern of the organic layer which suppressed vapor deposition blur can be formed.
  • the peripheral portion of the mask contacts the protruding portion 30, it is possible to avoid the edge portion of the mask from contacting the wiring 20. As a result, damage to the wiring 20 due to contact with the mask can be suppressed.
  • the wiring 20 described above includes extraction wirings 20X and 20Y drawn from the electrodes of the organic EL element 1U. Further, the wiring 20 includes a dummy wiring 20Z formed in a region where the lead wirings 20X and 20Y are not formed.
  • the protrusion 30 is provided in the region where the lead wirings 20X and 20Y are formed and the region where the dummy wiring 20Z is formed, so that the mask can be stably supported by the protrusion 30. It is possible to prevent the edge portion of the mask from coming into contact with the lead-out wirings 20X and 20Y and the dummy wiring Z.
  • the mask and the substrate 10 can be stably disposed close to each other even if the mask has an opening corresponding to the entire region of the element formation region A. Can be made.
  • a plurality of organic EL elements 1U are formed in a dot matrix in the element formation region A.
  • the organic EL element 1U may be a single element or an arbitrary one. It may be arranged in segments of the pattern.
  • the organic EL element 1U includes a lower electrode 11, an organic layer 12, and an upper electrode 13.
  • the lower electrode 11 and the upper electrode 13 are juxtaposed in a stripe shape in a direction intersecting each other, and a plurality of organic EL elements 1U are formed at positions where the lower electrode 11 and the upper electrode 13 intersect. .
  • the driving method of the organic EL element 1U is not limited to this, and active matrix driving may be used.
  • the lower electrode 11 is an electrode divided for each organic EL element 1U
  • the upper electrode is an electrode formed so as to be common to the plurality of organic EL elements 1U.
  • an insulating film 14 is provided to ensure insulation between the electrodes.
  • the insulating film 14 is formed so as to fill in the space between the patterns of the lower electrode 11 and partially cover the side end portion (side surface where the adjacent lower electrodes face each other), and the organic EL elements 1U are arranged in a dot matrix.
  • the organic EL element 1U is formed in a lattice shape having openings.
  • the partition wall 16 is provided between the organic EL elements 1U in the element formation region A.
  • the partition 16 is formed in a stripe shape in a direction intersecting the lower electrode 11 in order to form a pattern of the upper electrode 13 without using a mask or the like or to completely electrically insulate the adjacent upper electrode 13. ing.
  • the protrusion 30 described above can be formed by the same material and the same process as the partition wall 16. In this case, since the partition wall 16 is formed in a reverse tapered cross-sectional shape (a shape in which the side surface has a downward tapered surface), the cross section of the protruding portion 30 is also formed in the same shape. Further, in this case, the protruding portion 30 has substantially the same height as the partition wall 16.
  • the organic EL element 1U is sealed by a sealing substrate 17.
  • the substrate 10 and the sealing substrate 17 are bonded to each other through an adhesive 17A in an adhesive region S surrounding the element formation region A.
  • the protrusion part 30 is provided in this adhesion
  • the protrusions 30 in the bonding region S are arranged in an annular shape.
  • a plurality of protrusions 30 are arranged in a scattered manner, and the plurality of protrusions 30 are arranged in a staggered manner.
  • one protrusion 30 is disposed between a pair of adjacent protrusions 30, and in the direction in which the lower electrode 11 extends, the pair of protrusions 30 are substantially the same.
  • the protrusions 30 disposed at the same position and disposed between the pair of protrusions 30 are disposed at different positions with respect to the pair of protrusions 30.
  • the protrusions 30 are interspersed in the bonding region, so that an effect of suppressing the spread when the adhesive 17A is applied can be obtained, and the adhesive 17A can be applied to the desired region with high accuracy. .
  • FIG. 3 is an explanatory diagram showing a specific arrangement and form of protrusions in the organic EL device according to the embodiment of the present invention
  • FIG. 3 (a) is a plan view
  • FIG. 3 (b) is X1- X1 sectional view
  • FIG. 3C is an X2-X2 sectional view
  • the protrusion 30 is formed in the formation region of the wiring 20 outside the element formation region A.
  • the protrusions 30 are arranged in a dotted manner along the application pattern of the adhesive 17A in the adhesive region S where the adhesive 17A is applied.
  • the width of the adhesion region S is formed larger than the width of the protruding portion 30.
  • the protrusions 30 in the bonding region S are scattered with a sufficient interval, so that the protrusions 30 can be arranged without affecting the ultraviolet curing of the adhesive 17A.
  • the upper surface of the protrusion 30 has a substantially rectangular shape that is long along the direction in which the partition 16 extends (the direction of the dashed line L).
  • the longitudinal section of the protrusion 30 and the cross section intersecting with it are inversely tapered as shown in FIGS. 3 (b) and 3 (c), respectively.
  • the taper angle ⁇ in the longitudinal section shown in FIG. 3A is the same as or smaller than the taper angle ⁇ in the section intersecting the longitudinal section shown in FIG.
  • the substrate 10 is light transmissive in the case of a bottom emission method in which light is extracted from the substrate 10 side, and is formed of a base material that can support the organic EL element 1U, such as glass or plastic.
  • One of the lower electrode 11 and the upper electrode 13 functions as an anode and the other functions as a cathode.
  • a material having a work function larger than that of the cathode is selected for the anode.
  • the lower electrode 11 and the upper electrode 13 are formed of a transparent conductive film on the side from which light is extracted.
  • the lower electrode 11 is a transparent conductive film
  • the upper electrode 13 is a transparent conductive film.
  • a transparent metal oxide such as ITO (Indium Tin Oxide), IZO (Indium Zinc Oxide), zinc oxide-based transparent conductive film, SnO 2 -based transparent conductive film, or titanium dioxide-based transparent conductive film is used. Can do.
  • the upper electrode 13 serves as a cathode and has a work function smaller than that of the anode (for example, 4 eV or less) (metal, metal oxide, metal fluoride, alloy, etc.) ) Is used.
  • metal films such as aluminum (Al), indium (In), magnesium (Mg), amorphous semiconductors such as doped polyaniline and doped polyphenylene vinylene, Cr 2 O 3 , NiO, Mn 2 An oxide such as O 5 can be used.
  • a single layer structure made of a metal material, a laminated structure such as LiO 2 / Al, or the like can be adopted.
  • the insulating film 14 is made of a material such as polyimide resin, acrylic resin, silicon oxide, or silicon nitride.
  • the insulating film 14 is formed by depositing the material of the insulating film 14 on the substrate 10 on which the lower electrode 11 is patterned, and then forming an opening for forming a light emitting region for each organic EL element 1U on the lower electrode 11. Patterning is performed. Specifically, an opening pattern of the organic EL element 1U is formed by forming a film on the substrate 10 on which the lower electrode 11 is formed to have a predetermined coating thickness, and performing exposure processing and development processing using an exposure mask. A layer of the insulating film 14 having a shape is formed.
  • the partition wall 16 is made of an insulating material such as a photosensitive resin on the insulating film 14 described above by spin coating or the like so as to be thicker than the total thickness of the organic layer 12 and the upper electrode 13 forming the organic EL element 1U.
  • the photosensitive resin film is irradiated with ultraviolet rays or the like through a photomask having a stripe pattern intersecting the lower electrode 11, and a difference in development speed caused by a difference in exposure amount in the thickness direction of the layer.
  • the protruding portion 30 can be formed by the same material and the same process as the partition wall 16.
  • the organic layer 12 has a laminated structure of light emitting functional layers including a light emitting layer.
  • a hole injection layer and a hole transport are sequentially formed from the anode side.
  • a layer, a light emitting layer, an electron transport layer, an electron injection layer, and the like are selectively formed.
  • NPB N, N-di (naphtalence) -N, N-dipheneyl-benzidene
  • This hole transport layer has a function of transporting holes injected from the anode to the light emitting layer.
  • the hole transport layer may be a single layer or a stack of two or more layers.
  • the hole transport layer is not formed by a single material, but a single layer may be formed by a plurality of materials, and a guest material having a high charge donating (accepting) property may be formed on a host material having a high charge transport capability. Doping may be performed.
  • red (R), green (G), and blue (B) light-emitting layers are formed in respective film formation regions by using a resistance heating vapor deposition method using a coating mask.
  • red (R) an organic material that emits red light such as a styryl dye such as DCM1 (4- (dicyanomethylene) -2-methyl-6- (4'-dimethylaminostyryl) -4H-pyran) is used.
  • An organic material that emits green light such as aluminum quinolinol complex (Alq3), is used as green (G).
  • blue (B) an organic material emitting blue light such as a distyryl derivative or a triazole derivative is used.
  • the emission form may be a fluorescent light emitting material or a phosphorescent light emitting material.
  • the electron transport layer formed on the light emitting layer is formed by using various materials such as an aluminum quinolinol complex (Alq3) by various film forming methods such as resistance heating vapor deposition.
  • the electron transport layer has a function of transporting electrons injected from the cathode to the light emitting layer.
  • This electron transport layer may have a multilayer structure in which only one layer is stacked or two or more layers are stacked.
  • the electron transport layer may be formed of a plurality of materials instead of a single material, and a guest material having a high charge donating (accepting) property may be formed on a host material having a high charge transport capability. It may be formed by doping.
  • the sealing member that seals the organic EL element 1U is, for example, the sealing substrate 17 bonded to the substrate 10 via the adhesive 17A, and the organic EL element is interposed between the substrate 10 and the sealing substrate 17.
  • a sealing space for sealing 1U is formed.
  • the sealing substrate 17 a glass substrate or a metal substrate can be used.
  • a sealing film covering the organic EL element 1U can also be adopted.
  • a metal or silicon oxide, nitride, or acid formed by an atomic layer growth method can be used.
  • a single layer or multilayer film of nitride can be used.
  • alkyl metal such as TMA (trimethylaluminum), TEA (triethylaluminum), DMAH (dimethylaluminum hydride)
  • Al 2 O 3 film An aluminum oxide film (for example, Al 2 O 3 film) obtained, a silicon oxide film (for example, SiO 2 film) obtained by a reaction between a vaporized gas of a silicon-based material and a vaporized gas of water can be used. .
  • the lead-out wiring 20X is electrically connected to the lower electrode 11
  • the lead-out wiring 20Y is electrically connected to the upper electrode 13.
  • the wiring 20 is patterned in the same process as the lower electrode 11.
  • the wiring 20 can have, for example, a multilayer structure in which metal electrodes are stacked using a transparent conductive film as a base layer.

Landscapes

  • Electroluminescent Light Sources (AREA)

Abstract

The present invention is provided with: a substrate (10); one or more organic EL elements (1U) formed at the substrate (10); and wiring (20) formed at the outside of the region (element formation region (A)) at which the organic EL elements (1U) are formed at the substrate (10). At the region (wiring formation region (B)) at which the wiring (20) is formed of the substrate (10), a protruding section (30) is provided protruding at least to a position higher than the surface of the wiring (20).

Description

有機EL装置Organic EL device
 本発明は、有機EL装置に関するものである。 The present invention relates to an organic EL device.
 有機EL装置において有機層を形成する方法の一つに、マスク蒸着によって所望のパターンを形成する方法が知られている。例えば、一つの基板上に発光色の異なる複数の有機EL素子を形成してカラー表示や白色照明を行うものでは、発光色毎の蒸着パターンに対応した開口パターンを有する複数のマスクを用い、電極や配線が形成された基板上に発光色毎の蒸着パターンを順次形成する。この際、基板に対面して設置するマスクが先に形成した蒸着膜に接触すると蒸着膜が損傷する不具合が生じるので、マスクと基板の間にスペーサを介在させてマスクと基板上の蒸着膜との接触を避けることが一般に行われている(例えば、下記特許文献1参照)。 As a method for forming an organic layer in an organic EL device, a method for forming a desired pattern by mask vapor deposition is known. For example, in a case where a plurality of organic EL elements having different emission colors are formed on one substrate to perform color display or white illumination, a plurality of masks having an opening pattern corresponding to a deposition pattern for each emission color are used, and electrodes In addition, a deposition pattern for each emission color is sequentially formed on the substrate on which the wiring is formed. At this time, if the mask placed facing the substrate comes into contact with the previously formed vapor deposition film, the vapor deposition film may be damaged. Therefore, a spacer is interposed between the mask and the substrate so that the mask and the vapor deposition film on the substrate In general, avoiding the contact is performed (see, for example, Patent Document 1 below).
特開2010-275598号公報JP 2010-275598 A
 前述した従来技術のように、基板とマスクとの間にスペーサを介在させる方法では、基板とマスクの間に比較的大きい間隙が形成されることになるので、蒸着した有機材料が開口パターンの外側に回り込んで蒸着ボケが生じ易くなる。基板上に多数の有機EL素子を形成する場合には、蒸着ボケが抑制された高精細な蒸着パターンが必要になる。 In the method of interposing a spacer between the substrate and the mask as in the prior art described above, a relatively large gap is formed between the substrate and the mask. Vapor deposition blur easily occurs. When a large number of organic EL elements are formed on a substrate, a high-definition vapor deposition pattern in which vapor deposition blur is suppressed is necessary.
 前述した蒸着ボケを抑制するためには基板とマスクをできるだけ近接配置することが必要になる。基板とマスクを近接配置するための手段としては、マスクの開口部の近傍に突起を設けることや、有機EL素子の陰極隔壁を利用したマスク支持などが提案されている。これらの手段によると、有機EL素子の形成領域(以下、素子形成領域という)においては、マスクと基板表面を接触させること無くマスクを基板に近接配置することが可能になる。 In order to suppress the aforementioned evaporation blur, it is necessary to arrange the substrate and the mask as close as possible. As means for arranging the substrate and the mask close to each other, it has been proposed to provide a protrusion in the vicinity of the opening of the mask or to support the mask using the cathode partition of the organic EL element. According to these means, in the organic EL element formation region (hereinafter referred to as element formation region), the mask can be disposed close to the substrate without bringing the mask into contact with the substrate surface.
 しかしながら、マスクと基板とを近接配置した場合には、マスクのエッジ部が素子形成領域の外側に形成された配線(例えば引出配線)に接触しやすくなる。特に、素子形成領域の全域に一様な蒸着膜を形成する場合のマスクは素子形成領域の全域が開口されているので、素子形成領域内でマスクを支持することができない。このようなマスクを基板と近接配置する場合には、マスクのエッジ部が素子形成領域の外側に形成された配線に接触して配線が損傷する不具合が起こり易くなる問題があった。 However, when the mask and the substrate are arranged close to each other, the edge portion of the mask easily comes into contact with the wiring (for example, the lead wiring) formed outside the element formation region. In particular, the mask for forming a uniform vapor deposition film over the entire area of the element formation region is not supported in the element formation area because the entire area of the element formation area is opened. When such a mask is arranged close to the substrate, there is a problem that the edge portion of the mask is in contact with the wiring formed outside the element formation region and the wiring is easily damaged.
 本発明は、このような問題に対処することを課題の一例とするものである。すなわち、マスク蒸着によって有機層を形成する有機EL装置において、蒸着ボケを抑制すること、基板上の配線の損傷を抑止すること、等が本発明の目的である。 The present invention is an example of a problem to deal with such a problem. That is, in an organic EL device that forms an organic layer by mask vapor deposition, it is an object of the present invention to suppress vapor deposition blur, suppress damage to wiring on a substrate, and the like.
 このような目的を達成するために、本発明による有機EL装置は、以下の構成を少なくとも具備するものである。 In order to achieve such an object, the organic EL device according to the present invention has at least the following configuration.
 基板と、前記基板に形成された単数又は複数の有機EL素子と、前記基板における前記有機EL素子が形成された領域の外側に形成された配線とを備え、前記基板における前記配線が形成された領域には、少なくとも前記配線の表面より高い位置まで突出した突出部が設けられていることを特徴とする有機EL装置。 A substrate, one or a plurality of organic EL elements formed on the substrate, and wiring formed outside the region where the organic EL element is formed on the substrate, the wiring on the substrate being formed The organic EL device, wherein the region is provided with a protruding portion that protrudes at least to a position higher than the surface of the wiring.
本発明の実施形態に係る有機EL装置の基板上を示した平面説明図である。It is plane explanatory drawing which showed on the board | substrate of the organic electroluminescent apparatus which concerns on embodiment of this invention. 本発明の実施形態に係る有機EL装置の一部を示した断面説明図である。It is a section explanatory view showing a part of an organic EL device concerning an embodiment of the present invention. 本発明の実施形態に係る有機EL装置における突出部の具体的な配置及び形態例を示した説明図である(図3(a)が平面図、図3(b)がX1-X1断面図、図3(c)がX2-X2断面図)。FIGS. 3A and 3B are explanatory views showing a specific arrangement and form of protrusions in an organic EL device according to an embodiment of the present invention (FIG. 3A is a plan view, FIG. 3B is a cross-sectional view taken along line X1-X1, FIG. 3C is a sectional view taken along line X2-X2.
 以下、図面を参照しながら本発明の実施形態を説明する。図1は、本発明の実施形態に係る有機EL装置の基板上を示した平面説明図であり、図2は、本発明の実施形態に係る有機EL装置の一部を示した断面説明図である。有機EL装置1は、基板10と、基板10に形成された単数又は複数の有機EL素子1Uと、基板10における有機EL素子1Uが形成された領域(素子形成領域A)の外側に形成された配線20とを備えている。そして、基板10における配線20が形成された領域(配線形成領域B)には、少なくとも配線20の表面より高い位置まで突出した突出部30が設けられている。 Hereinafter, embodiments of the present invention will be described with reference to the drawings. FIG. 1 is an explanatory plan view showing a substrate of an organic EL device according to an embodiment of the present invention, and FIG. 2 is an explanatory sectional view showing a part of the organic EL device according to an embodiment of the present invention. is there. The organic EL device 1 is formed outside the substrate 10, one or more organic EL elements 1 </ b> U formed on the substrate 10, and a region where the organic EL element 1 </ b> U is formed on the substrate 10 (element formation region A). Wiring 20 is provided. In the region of the substrate 10 where the wiring 20 is formed (wiring formation region B), a protruding portion 30 that protrudes at least to a position higher than the surface of the wiring 20 is provided.
 このような有機EL装置1によると、有機EL素子1Uにおける有機層をマスク蒸着する際に、マスクを突出部30に当接させることで、マスクと基板10を近接配置させることができる。これによって蒸着ボケを抑制した有機層の蒸着パターンを形成することができる。また、マスクの周縁部が突出部30に当接することで、マスクのエッジ部が配線20に接触することを回避することができる。これによってマスクの接触による配線20の損傷を抑止することができる。 According to such an organic EL device 1, when the organic layer in the organic EL element 1 </ b> U is subjected to mask vapor deposition, the mask and the substrate 10 can be disposed close to each other by bringing the mask into contact with the protruding portion 30. Thereby, the vapor deposition pattern of the organic layer which suppressed vapor deposition blur can be formed. In addition, since the peripheral portion of the mask contacts the protruding portion 30, it is possible to avoid the edge portion of the mask from contacting the wiring 20. As a result, damage to the wiring 20 due to contact with the mask can be suppressed.
 前述した配線20は、有機EL素子1Uの電極から引き出された引出配線20X,20Yを含んでいる。また、配線20は、引出配線20X,20Yが形成されない領域に形成されるダミー配線20Zを含んでいる。図1に示した例では、引出配線20X,20Yが形成された領域とダミー配線20Zが形成された領域に突出部30を設けているので、突出部30によってマスクを安定して支持することができ、マスクのエッジ部が引出配線20X,20Yとダミー配線Zに接触するのを抑止することができる。また、突出部30を素子形成領域Aの外側周囲に設けているので、マスクが素子形成領域Aの全域に対応する開口を有するものであっても、マスクと基板10とを安定的に近接配置させることができる。 The wiring 20 described above includes extraction wirings 20X and 20Y drawn from the electrodes of the organic EL element 1U. Further, the wiring 20 includes a dummy wiring 20Z formed in a region where the lead wirings 20X and 20Y are not formed. In the example shown in FIG. 1, the protrusion 30 is provided in the region where the lead wirings 20X and 20Y are formed and the region where the dummy wiring 20Z is formed, so that the mask can be stably supported by the protrusion 30. It is possible to prevent the edge portion of the mask from coming into contact with the lead-out wirings 20X and 20Y and the dummy wiring Z. Further, since the protrusions 30 are provided on the outer periphery of the element formation region A, the mask and the substrate 10 can be stably disposed close to each other even if the mask has an opening corresponding to the entire region of the element formation region A. Can be made.
 図1に示した例では、素子形成領域A内にはドットマトリクス状に複数の有機EL素子1Uが形成されているが、これに限らず、有機EL素子1Uは単一であっても、任意のパターンのセグメント状に配列されたものなどであってもよい。また、図1及び図2においては、有機EL素子1Uは、下部電極11、有機層12、上部電極13を備えている。図示の例では、下部電極11と上部電極13は互いに交差する方向にそれぞれストライプ状に並列されており、下部電極11と上部電極13の交差する位置に複数の有機EL素子1Uが形成されている。ここでは、有機EL素子1Uをパッシブマトリクス駆動する例を示しているが、有機EL素子1Uの駆動方式はこれに限らず、アクティブマトリクス駆動するものであってもよい。この場合は、下部電極11は有機EL素子1U毎に区分された電極になり、上部電極は複数の有機EL素子1Uに共通するように成膜された電極になる。 In the example shown in FIG. 1, a plurality of organic EL elements 1U are formed in a dot matrix in the element formation region A. However, the present invention is not limited to this, and the organic EL element 1U may be a single element or an arbitrary one. It may be arranged in segments of the pattern. 1 and 2, the organic EL element 1U includes a lower electrode 11, an organic layer 12, and an upper electrode 13. In the illustrated example, the lower electrode 11 and the upper electrode 13 are juxtaposed in a stripe shape in a direction intersecting each other, and a plurality of organic EL elements 1U are formed at positions where the lower electrode 11 and the upper electrode 13 intersect. . Here, an example in which the organic EL element 1U is passively matrix driven is shown, but the driving method of the organic EL element 1U is not limited to this, and active matrix driving may be used. In this case, the lower electrode 11 is an electrode divided for each organic EL element 1U, and the upper electrode is an electrode formed so as to be common to the plurality of organic EL elements 1U.
 図1及び図2に示すように下部電極11が複数の電極にパターン形成されている場合は、各電極間の絶縁性を確保するために絶縁膜14が設けられる。この絶縁膜14は、下部電極11のパターン間を埋めると共にその側端部分(隣接する下部電極が対向しあう側面)を一部覆うように形成され、有機EL素子1Uをドットマトリクス状に配置する場合は、有機EL素子1Uの形成される部分を開口した格子状に形成される。 As shown in FIGS. 1 and 2, when the lower electrode 11 is patterned on a plurality of electrodes, an insulating film 14 is provided to ensure insulation between the electrodes. The insulating film 14 is formed so as to fill in the space between the patterns of the lower electrode 11 and partially cover the side end portion (side surface where the adjacent lower electrodes face each other), and the organic EL elements 1U are arranged in a dot matrix. In this case, the organic EL element 1U is formed in a lattice shape having openings.
 図示の例では、素子形成領域Aには有機EL素子1U間に隔壁16を設けている。隔壁16は、マスク等を用いることなく上部電極13のパターンを形成するため、或いは隣り合う上部電極13を完全に電気的に絶縁するために、下部電極11と交差する方向にストライプ状に形成されている。前述した突出部30は、この隔壁16と同材料・同工程で形成することができる。この場合、隔壁16は逆テーパー断面形状(側面が下向きのテーパー面を有する形状)に形成されるので、突出部30の断面も同様の形状に形成される。またこの場合、突出部30は隔壁16と略同じ高さになる。 In the illustrated example, the partition wall 16 is provided between the organic EL elements 1U in the element formation region A. The partition 16 is formed in a stripe shape in a direction intersecting the lower electrode 11 in order to form a pattern of the upper electrode 13 without using a mask or the like or to completely electrically insulate the adjacent upper electrode 13. ing. The protrusion 30 described above can be formed by the same material and the same process as the partition wall 16. In this case, since the partition wall 16 is formed in a reverse tapered cross-sectional shape (a shape in which the side surface has a downward tapered surface), the cross section of the protruding portion 30 is also formed in the same shape. Further, in this case, the protruding portion 30 has substantially the same height as the partition wall 16.
 図示の例では、有機EL素子1Uは、封止基板17によって封止されている。基板10と封止基板17とは素子形成領域Aを囲む接着領域Sにて接着剤17Aを介して接着されている。そして、図示の例では、この接着領域S内に突出部30が設けられている。接着領域S内における突出部30の配置は、図1に示すように、環状に配置されている。また、図示の例では、突出部30は複数点在して配置されており、複数の突出部30は千鳥状に配置されている。また、隔壁16が延在する方向において、隣接する一対の突出部30の間に、一の突出部30が配置され、下部電極11が延在する方向において、前述の一対の突出部30は略同じ位置に配置され、これら一対の突出部30の間に配置される突出部30は、一対の突出部30に対して異なる位置に配置されている。このように、突出部30を接着領域内に点在させることで、接着剤17Aの塗布時の広がりを抑制する作用が得られ、接着剤17Aを所望の領域内に精度良く塗布することができる。また、複数の突出部30を千鳥状に配置して、液溜まり部を形成しないようにすることで、フォトリソ工程で隔壁16及び突出部30を形成する際のエッチング液の排出を良好にし、隔壁16及び突出部30を均一に形成することができる。 In the illustrated example, the organic EL element 1U is sealed by a sealing substrate 17. The substrate 10 and the sealing substrate 17 are bonded to each other through an adhesive 17A in an adhesive region S surrounding the element formation region A. And in the example of illustration, the protrusion part 30 is provided in this adhesion | attachment area | region S. FIG. As shown in FIG. 1, the protrusions 30 in the bonding region S are arranged in an annular shape. In the illustrated example, a plurality of protrusions 30 are arranged in a scattered manner, and the plurality of protrusions 30 are arranged in a staggered manner. Further, in the direction in which the partition wall 16 extends, one protrusion 30 is disposed between a pair of adjacent protrusions 30, and in the direction in which the lower electrode 11 extends, the pair of protrusions 30 are substantially the same. The protrusions 30 disposed at the same position and disposed between the pair of protrusions 30 are disposed at different positions with respect to the pair of protrusions 30. As described above, the protrusions 30 are interspersed in the bonding region, so that an effect of suppressing the spread when the adhesive 17A is applied can be obtained, and the adhesive 17A can be applied to the desired region with high accuracy. . Further, by arranging a plurality of protrusions 30 in a staggered manner so as not to form a liquid reservoir, it is possible to improve the drainage of the etching liquid when forming the partition walls 16 and the protrusions 30 in the photolithography process, and the partition walls 16 and the protrusion 30 can be formed uniformly.
 図3は、本発明の実施形態に係る有機EL装置における突出部の具体的な配置及び形態例を示した説明図である(図3(a)が平面図、図3(b)がX1-X1断面図、図3(c)がX2-X2断面図)。図3(a)に示す例でも、突出部30は素子形成領域Aの外側における配線20の形成領域内に形成されている。また、突出部30は、接着剤17Aが塗布される接着領域S内で、接着剤17Aの塗布パターンに沿って点在して配置されている。この場合、接着領域Sの幅は、突出部30の幅より大きく形成される。図示のように接着領域S内の突出部30が十分に間隔を空けて点在していることで、接着剤17Aの紫外線硬化に影響なく、突出部30を配置することができる。 FIG. 3 is an explanatory diagram showing a specific arrangement and form of protrusions in the organic EL device according to the embodiment of the present invention (FIG. 3 (a) is a plan view, and FIG. 3 (b) is X1- X1 sectional view, FIG. 3C is an X2-X2 sectional view). Also in the example shown in FIG. 3A, the protrusion 30 is formed in the formation region of the wiring 20 outside the element formation region A. Further, the protrusions 30 are arranged in a dotted manner along the application pattern of the adhesive 17A in the adhesive region S where the adhesive 17A is applied. In this case, the width of the adhesion region S is formed larger than the width of the protruding portion 30. As shown in the drawing, the protrusions 30 in the bonding region S are scattered with a sufficient interval, so that the protrusions 30 can be arranged without affecting the ultraviolet curing of the adhesive 17A.
 突出部30の上面は、図3(a)に示すように、隔壁16が延在する方向(一点破線Lの方向)に沿って長い略矩形状である。隔壁16が露光マスクをずらした2回露光によって形成される場合には、突出部30の長手方向断面及びそれに交差する断面はそれぞれ図3(b)及び図3(c)に示すような逆テーパー形状になる。その際、前述した2回露光によって図3(a)に示した長手方向断面におけるテーパー角度αがそれに交差する方向の断面におけるテーパー角度βに比べて同じ又は小さくなる。突出部30の上面を一方向に長くすることで、突出部30自身の転倒を防止して、マスクを安定して支持することができる。 As shown in FIG. 3A, the upper surface of the protrusion 30 has a substantially rectangular shape that is long along the direction in which the partition 16 extends (the direction of the dashed line L). When the partition 16 is formed by double exposure with the exposure mask shifted, the longitudinal section of the protrusion 30 and the cross section intersecting with it are inversely tapered as shown in FIGS. 3 (b) and 3 (c), respectively. Become a shape. At this time, the taper angle α in the longitudinal section shown in FIG. 3A is the same as or smaller than the taper angle β in the section intersecting the longitudinal section shown in FIG. By making the upper surface of the protrusion 30 longer in one direction, the protrusion 30 itself can be prevented from falling and the mask can be stably supported.
 以下に、有機EL装置1の構成要素について具体的な形成例を示す。 Hereinafter, specific examples of forming the constituent elements of the organic EL device 1 will be described.
 基板10は、基板10側から光を取り出すボトムエミッション方式の場合には光透過性であり、ガラスやプラスチックなど、有機EL素子1Uを支持することができる基材によって形成される。下部電極11と上部電極13は、一方が陽極、他方が陰極として機能する。そして、陽極は陰極より仕事関数が大きい材料が選択される。また、下部電極11と上部電極13は、光を取り出す側の電極が透明導電膜で形成される。ボトムエミッション方式の場合には、下部電極11が透明導電膜になり、トップエミッション方式の場合には、上部電極13が透明導電膜になる。透明導電膜は、例えば、ITO(Indium Tin Oxide),IZO(Indium Zinc Oxide),酸化亜鉛系透明導電膜,SnO2系透明導電膜,二酸化チタン系透明導電膜などの透明金属酸化物を用いることができる。 The substrate 10 is light transmissive in the case of a bottom emission method in which light is extracted from the substrate 10 side, and is formed of a base material that can support the organic EL element 1U, such as glass or plastic. One of the lower electrode 11 and the upper electrode 13 functions as an anode and the other functions as a cathode. A material having a work function larger than that of the cathode is selected for the anode. The lower electrode 11 and the upper electrode 13 are formed of a transparent conductive film on the side from which light is extracted. In the case of the bottom emission method, the lower electrode 11 is a transparent conductive film, and in the case of the top emission method, the upper electrode 13 is a transparent conductive film. For the transparent conductive film, for example, a transparent metal oxide such as ITO (Indium Tin Oxide), IZO (Indium Zinc Oxide), zinc oxide-based transparent conductive film, SnO 2 -based transparent conductive film, or titanium dioxide-based transparent conductive film is used. Can do.
 ボトムエミッション方式で下部電極11側を陽極とする場合には、上部電極13はこちらが陰極となり、陽極より仕事関数の小さい(例えば4eV以下)材料(金属,金属酸化物,金属フッ化物,合金等)を用いる。具体的には、アルミニウム(Al),インジウム(In),マグネシウム(Mg)等の金属膜、ドープされたポリアニリンやドープされたポリフェニレンビニレン等の非晶質半導体、Cr23,NiO,Mn25等の酸化物を使用できる。構造としては、金属材料による単層構造、LiO2/Al等の積層構造等が採用できる。 When the bottom electrode 11 side is used as an anode in the bottom emission method, the upper electrode 13 serves as a cathode and has a work function smaller than that of the anode (for example, 4 eV or less) (metal, metal oxide, metal fluoride, alloy, etc.) ) Is used. Specifically, metal films such as aluminum (Al), indium (In), magnesium (Mg), amorphous semiconductors such as doped polyaniline and doped polyphenylene vinylene, Cr 2 O 3 , NiO, Mn 2 An oxide such as O 5 can be used. As the structure, a single layer structure made of a metal material, a laminated structure such as LiO 2 / Al, or the like can be adopted.
 絶縁膜14は、ポリイミド樹脂,アクリル系樹脂,酸化シリコン,窒化シリコンなどの材料が用いられる。絶縁膜14の形成は、絶縁膜14の材料を下部電極11がパターン形成された基板10上に成膜した後、下部電極11上に有機EL素子1U毎の発光領域を形成する開口を形成するパターニングがなされる。具体的には、下部電極11が形成された基板10に所定の塗布厚となるように膜を形成し、露光マスクを用いて露光処理,現像処理を施すことにより、有機EL素子1Uの開口パターン形状を有する絶縁膜14の層が形成される。 The insulating film 14 is made of a material such as polyimide resin, acrylic resin, silicon oxide, or silicon nitride. The insulating film 14 is formed by depositing the material of the insulating film 14 on the substrate 10 on which the lower electrode 11 is patterned, and then forming an opening for forming a light emitting region for each organic EL element 1U on the lower electrode 11. Patterning is performed. Specifically, an opening pattern of the organic EL element 1U is formed by forming a film on the substrate 10 on which the lower electrode 11 is formed to have a predetermined coating thickness, and performing exposure processing and development processing using an exposure mask. A layer of the insulating film 14 having a shape is formed.
 隔壁16は、前述した絶縁膜14の上に感光性樹脂等の絶縁材料を、有機EL素子1Uを形成する有機層12と上部電極13の膜厚の総和より厚い膜厚にスピンコート法等で塗布形成した後、この感光性樹脂膜上に下部電極11に交差するストライプ状パターンを有するフォトマスクを介して紫外線等を照射し、層の厚さ方向の露光量の違いから生じる現像速度の差を利用して、側部が下向きのテーパー面を有する隔壁16を形成する。突出部30は、この隔壁16と同材料・同工程で形成することができる。 The partition wall 16 is made of an insulating material such as a photosensitive resin on the insulating film 14 described above by spin coating or the like so as to be thicker than the total thickness of the organic layer 12 and the upper electrode 13 forming the organic EL element 1U. After coating and forming, the photosensitive resin film is irradiated with ultraviolet rays or the like through a photomask having a stripe pattern intersecting the lower electrode 11, and a difference in development speed caused by a difference in exposure amount in the thickness direction of the layer. Is used to form the partition wall 16 having a tapered surface with its side facing downward. The protruding portion 30 can be formed by the same material and the same process as the partition wall 16.
 有機層12は、発光層を含む発光機能層の積層構造を有し、下部電極11と上部電極13の一方を陽極とし他方を陰極とすると、陽極側から順次、正孔注入層、正孔輸送層、発光層、電子輸送層、電子注入層などが選択的に形成される。 The organic layer 12 has a laminated structure of light emitting functional layers including a light emitting layer. When one of the lower electrode 11 and the upper electrode 13 is an anode and the other is a cathode, a hole injection layer and a hole transport are sequentially formed from the anode side. A layer, a light emitting layer, an electron transport layer, an electron injection layer, and the like are selectively formed.
 有機層12の形成例を以下に説明する。例えば先ず、NPB(N,N-di(naphtalence)-N,N-dipheneyl-benzidene)を正孔輸送層として成膜する。この正孔輸送層は、陽極から注入される正孔を発光層に輸送する機能を有する。この正孔輸送層は、1層だけ積層したものでも2層以上積層したものであってもよい。また正孔輸送層は、単一の材料による成膜ではなく、複数の材料により一つの層を形成しても良く、電荷輸送能力の高いホスト材料に電荷供与(受容)性の高いゲスト材料をドーピングしてもよい。 An example of forming the organic layer 12 will be described below. For example, first, NPB (N, N-di (naphtalence) -N, N-dipheneyl-benzidene) is formed as a hole transport layer. This hole transport layer has a function of transporting holes injected from the anode to the light emitting layer. The hole transport layer may be a single layer or a stack of two or more layers. In addition, the hole transport layer is not formed by a single material, but a single layer may be formed by a plurality of materials, and a guest material having a high charge donating (accepting) property may be formed on a host material having a high charge transport capability. Doping may be performed.
 次に、正孔輸送層の上に発光層を成膜する。一例としては、抵抗加熱蒸着法により、赤(R)、緑(G)、青(B)の発光層を、塗分け用マスクを利用してそれぞれの成膜領域に成膜する。赤(R)としてDCM1(4-(ジシアノメチレン)-2-メチル-6-(4’-ジメチルアミノスチリル)-4H-ピラン)等のスチリル色素等の赤色を発光する有機材料を用いる。緑(G)としてアルミキノリノール錯体(Alq3) 等の緑色を発光する有機材料を用いる。青(B)としてジスチリル誘導体、トリアゾール誘導体等の青色を発光する有機材料を用いる。勿論、他の材料でも、ホスト-ゲスト系の層構成でも良く、発光形態も蛍光発光材料を用いてもりん光発光材料を用いたものであってもよい。 Next, a light emitting layer is formed on the hole transport layer. As an example, red (R), green (G), and blue (B) light-emitting layers are formed in respective film formation regions by using a resistance heating vapor deposition method using a coating mask. As red (R), an organic material that emits red light such as a styryl dye such as DCM1 (4- (dicyanomethylene) -2-methyl-6- (4'-dimethylaminostyryl) -4H-pyran) is used. An organic material that emits green light, such as aluminum quinolinol complex (Alq3), is used as green (G). As the blue (B), an organic material emitting blue light such as a distyryl derivative or a triazole derivative is used. Of course, other materials or a host-guest layer structure may be used, and the emission form may be a fluorescent light emitting material or a phosphorescent light emitting material.
 発光層の上に成膜される電子輸送層は、抵抗加熱蒸着法等の各種成膜方法により、例えばアルミキノリノール錯体(Alq3 )等の各種材料を用いて成膜する。電子輸送層は、陰極から注入される電子を発光層に輸送する機能を有する。この電子輸送層は、1層だけ積層したものでも2層以上積層した多層構造を有してもよい。また、電子輸送層は、単一の材料による成膜ではなく、複数の材料により一つの層を形成しても良く、電荷輸送能力の高いホスト材料に電荷供与(受容)性の高いゲスト材料をドーピングして形成してもよい。 The electron transport layer formed on the light emitting layer is formed by using various materials such as an aluminum quinolinol complex (Alq3) by various film forming methods such as resistance heating vapor deposition. The electron transport layer has a function of transporting electrons injected from the cathode to the light emitting layer. This electron transport layer may have a multilayer structure in which only one layer is stacked or two or more layers are stacked. In addition, the electron transport layer may be formed of a plurality of materials instead of a single material, and a guest material having a high charge donating (accepting) property may be formed on a host material having a high charge transport capability. It may be formed by doping.
 有機EL素子1Uを封止する封止部材は、一例としては、基板10と接着剤17Aを介して貼り合わせられる封止基板17であり、基板10と封止基板17との間に有機EL素子1Uを封止する封止空間が形成される。封止基板17としては、ガラス基板又は金属基板を用いることができる。 The sealing member that seals the organic EL element 1U is, for example, the sealing substrate 17 bonded to the substrate 10 via the adhesive 17A, and the organic EL element is interposed between the substrate 10 and the sealing substrate 17. A sealing space for sealing 1U is formed. As the sealing substrate 17, a glass substrate or a metal substrate can be used.
 また、封止部材としては、有機EL素子1Uを覆う封止膜を採用することもできる、封止膜としては、原子層成長法によって成膜される金属やケイ素の酸化物,窒化物,酸窒化物の単層又は多層膜を用いることができ、TMA(トリメチルアルミニウム)やTEA(トリエチルアルミニウム)、DMAH(ジメチルアルミニウム水素化物)等のアルキル系金属と、水や酸素、アルコール類との反応で得られるアルミニウム酸化物膜(例えば、Al23膜)、ケイ素系材料の気化ガスと水の気化ガスとの反応で得られるケイ素酸化物膜(例えば、SiO2膜)などを用いることができる。 Further, as the sealing member, a sealing film covering the organic EL element 1U can also be adopted. As the sealing film, a metal or silicon oxide, nitride, or acid formed by an atomic layer growth method can be used. A single layer or multilayer film of nitride can be used. By reaction of alkyl metal such as TMA (trimethylaluminum), TEA (triethylaluminum), DMAH (dimethylaluminum hydride) with water, oxygen, or alcohols. An aluminum oxide film (for example, Al 2 O 3 film) obtained, a silicon oxide film (for example, SiO 2 film) obtained by a reaction between a vaporized gas of a silicon-based material and a vaporized gas of water can be used. .
 配線形成領域Bに形成される配線20のうち、引出配線20Xは下部電極11に導通しており、引出配線20Yは上部電極13に導通している。配線20は、下部電極11と同工程でパターン形成される。配線20は、例えば、透明導電膜を下地層として金属電極を積層した多層構造にすることができる。 Among the wirings 20 formed in the wiring forming region B, the lead-out wiring 20X is electrically connected to the lower electrode 11, and the lead-out wiring 20Y is electrically connected to the upper electrode 13. The wiring 20 is patterned in the same process as the lower electrode 11. The wiring 20 can have, for example, a multilayer structure in which metal electrodes are stacked using a transparent conductive film as a base layer.
 以上、本発明の実施の形態について図面を参照して詳述してきたが、具体的な構成はこれらの実施の形態に限られるものではなく、本発明の要旨を逸脱しない範囲の設計の変更等があっても本発明に含まれる。上述の各図で示した実施の形態は、その目的及び構成等に特に矛盾や問題がない限り、互いの記載内容を組み合わせることが可能である。また、各図の記載内容はそれぞれ独立した実施形態になり得るものであり、本発明の実施形態は各図を組み合わせた一つの実施形態に限定されるものではない。 As described above, the embodiments of the present invention have been described in detail with reference to the drawings. However, the specific configuration is not limited to these embodiments, and the design can be changed without departing from the scope of the present invention. Is included in the present invention. The embodiments described in the above drawings can be combined with each other as long as there is no particular contradiction or problem in the purpose, configuration, or the like. Moreover, the description content of each figure can become independent embodiment, respectively, and embodiment of this invention is not limited to one embodiment which combined each figure.

Claims (9)

  1.  基板と、前記基板に形成された単数又は複数の有機EL素子と、前記基板における前記有機EL素子が形成された領域の外側に形成された配線とを備え、
     前記基板における前記配線が形成された領域には、少なくとも前記配線の表面より高い位置まで突出した突出部が設けられていることを特徴とする有機EL装置。
    A substrate, one or a plurality of organic EL elements formed on the substrate, and wiring formed outside the region where the organic EL element is formed on the substrate,
    In the organic EL device, a region of the substrate where the wiring is formed is provided with a protruding portion that protrudes at least to a position higher than the surface of the wiring.
  2.  前記配線は前記有機EL素子の電極から引き出された引出配線であることを特徴とする請求項1記載の有機EL装置。 2. The organic EL device according to claim 1, wherein the wiring is a lead wiring drawn from an electrode of the organic EL element.
  3.  前記有機EL素子が形成された領域には、前記有機EL素子間に隔壁が設けられ、前記突出部は前記隔壁と略同じ高さであることを特徴とする請求項1記載の有機EL装置。 2. The organic EL device according to claim 1, wherein a partition wall is provided between the organic EL elements in a region where the organic EL element is formed, and the protruding portion has substantially the same height as the partition wall.
  4.  前記突出部は環状に配置されていることを特徴とする請求項3記載の有機EL装置。 4. The organic EL device according to claim 3, wherein the protrusions are arranged in a ring shape.
  5.  前記突出部は複数点在していることを特徴とする請求項4記載の有機EL装置。 5. The organic EL device according to claim 4, wherein a plurality of the protrusions are scattered.
  6.  複数の前記突出部は千鳥状に配置されていることを特徴とする請求項5記載の有機EL装置。 6. The organic EL device according to claim 5, wherein the plurality of protrusions are arranged in a staggered pattern.
  7.  前記突出部の上面は、前記隔壁が延在する方向に沿って長い略矩形状であることを特徴とする請求項6記載の有機EL装置。 The organic EL device according to claim 6, wherein the upper surface of the protruding portion has a substantially rectangular shape that is long along a direction in which the partition wall extends.
  8.  前記基板と前記有機EL素子を封止する封止基板とが前記有機EL素子が形成された領域を囲む接着領域にて接着されており、前記接着領域内に前記突出部が設けられていることを特徴とする請求項7記載の有機EL装置。 The substrate and a sealing substrate for sealing the organic EL element are bonded to each other in an adhesive region surrounding the region where the organic EL element is formed, and the protruding portion is provided in the adhesive region. The organic EL device according to claim 7.
  9.  前記接着領域の幅は前記突出部の幅より大きいことを特徴とする請求項8記載の有機EL装置。 9. The organic EL device according to claim 8, wherein a width of the adhesion region is larger than a width of the protruding portion.
PCT/JP2012/073236 2012-09-11 2012-09-11 Organic el device WO2014041614A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
PCT/JP2012/073236 WO2014041614A1 (en) 2012-09-11 2012-09-11 Organic el device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2012/073236 WO2014041614A1 (en) 2012-09-11 2012-09-11 Organic el device

Publications (1)

Publication Number Publication Date
WO2014041614A1 true WO2014041614A1 (en) 2014-03-20

Family

ID=50277772

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2012/073236 WO2014041614A1 (en) 2012-09-11 2012-09-11 Organic el device

Country Status (1)

Country Link
WO (1) WO2014041614A1 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016152148A (en) * 2015-02-18 2016-08-22 日本精機株式会社 Organic el panel
WO2020065955A1 (en) * 2018-09-28 2020-04-02 シャープ株式会社 Display device and method for manufacturing same

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003257650A (en) * 2002-03-05 2003-09-12 Sanyo Electric Co Ltd Method of manufacturing organic electro-luminescence panel, organic electro-luminescence element, and mask
WO2007088690A1 (en) * 2006-01-31 2007-08-09 Kyocera Corporation El device
JP2010277856A (en) * 2009-05-28 2010-12-09 Tdk Corp Organic el display device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003257650A (en) * 2002-03-05 2003-09-12 Sanyo Electric Co Ltd Method of manufacturing organic electro-luminescence panel, organic electro-luminescence element, and mask
WO2007088690A1 (en) * 2006-01-31 2007-08-09 Kyocera Corporation El device
JP2010277856A (en) * 2009-05-28 2010-12-09 Tdk Corp Organic el display device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016152148A (en) * 2015-02-18 2016-08-22 日本精機株式会社 Organic el panel
WO2016132948A1 (en) * 2015-02-18 2016-08-25 日本精機株式会社 Organic el panel
CN107251651A (en) * 2015-02-18 2017-10-13 日本精机株式会社 Organic el panel
WO2020065955A1 (en) * 2018-09-28 2020-04-02 シャープ株式会社 Display device and method for manufacturing same
CN112753060A (en) * 2018-09-28 2021-05-04 夏普株式会社 Display device and method for manufacturing the same

Similar Documents

Publication Publication Date Title
KR102315094B1 (en) Organic Light Emitting Diode Display Having High Aperture Ratio And Method For Manufacturing The Same
US9252398B2 (en) Organic light emitting diode display device and method of fabricating the same
US9627645B2 (en) Mask plate, organic light-emitting diode (OLED) transparent display panel and manufacturing method thereof
KR102193886B1 (en) Organic Light Emitting Diode Display Having High Aperture Ratio And Method For Manufacturing The Same
JP6160499B2 (en) Display device, display device manufacturing method, and electronic apparatus
KR102166341B1 (en) Organic Light Emitting Diode Display Having High Aperture Ratio And Method For Manufacturing The Same
CN103515413B (en) Organic light-emitting diode (OLED) display apparatus and manufacture method thereof
JP2005268062A (en) Organic electroluminescent display
KR20100004221A (en) Top emission type organic electro-luminescence device
KR102263261B1 (en) Organic light emitting display device and method for manufacturing the same
JP4786893B2 (en) Organic electroluminescence display
KR102315824B1 (en) Organic light emitting display device and method of fabricating the same
KR100949509B1 (en) Display apparatus and method of producing the same
CN108878495B (en) Display panel, manufacturing method thereof and display device
JP2008146026A (en) Light-emitting apparatus and production method thereof
KR20140090458A (en) Organic light emitting diode display and manufacturing method thereof
KR20130024712A (en) Oganic electro-luminesence display panel and manufactucring method of the same
WO2014041614A1 (en) Organic el device
KR20140041315A (en) Method for manufacturing of organic light emitting display device
US7652420B2 (en) Organic electroluminescent device and method for fabricating the same
KR100658341B1 (en) Electroluminescent device and method of manufacturing thereof
KR102008513B1 (en) Organic Light Emitting Diode Display And Method For Manufacturing The Same
JP5058690B2 (en) Organic light emitting device
JP6205663B2 (en) Display panel and manufacturing method thereof
JP7412999B2 (en) Organic EL display panel and method for manufacturing organic EL display panel

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 12884646

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 12884646

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: JP