KR20100004221A - Top emission type organic electro-luminescence device - Google Patents

Abstract

PURPOSE: A top emission type organic electroluminescent device is provided to implement high brightness by forming an auxiliary electrode on a black matrix of a non-pixel region. CONSTITUTION: A first substrate(101) and a second substrates(102) have a pixel region and a non-pixel region. A first electrode(120) is formed in each pixel region. A bank is formed in the non-pixel region between the first electrodes. A column spacer is formed on the bank. An organic light emitting layer(125) is formed on the overall surface of the first substrate including the column spacer. A second electrode(127) is formed on the organic light emitting layer. Red, green, blue filters are formed on one side of the second substrate. The black matrix is formed on the non-pixel region corresponding to the boundary between the red, green, and blue filters. An auxiliary electrode(200) is formed on the black matrix.

Description

Top emission type organic electroluminescence device

The present invention relates to a top emission type organic light emitting display device, and more particularly, to an auxiliary electrode for preventing voltage drop of a second electrode.

Until recently, cathode ray tubes (CRT) have been mainly used as display devices. However, in recent years, flat panel such as plasma display panel (PDP), liquid crystal display device (LCD), organic electro-luminescence device (OLED), which can replace CRT Display devices are widely researched and used.

Among the flat panel display devices as described above, the organic light emitting display device (hereinafter referred to as OLED) is a self-light emitting device, and since the backlight used in the liquid crystal display device which is a non-light emitting device is not necessary, a light weight can be achieved.

In addition, the viewing angle and contrast ratio are superior to the liquid crystal display device, and it is advantageous in terms of power consumption. It is also possible to drive DC low voltage, has a fast response speed, and the internal components are solid, so it is strong against external shock and has a wide temperature range. It has advantages.

In particular, since the manufacturing process is simple, there is an advantage that can reduce the production cost more than the conventional liquid crystal display device.

OLEDs having these characteristics are largely divided into a passive matrix type and an active matrix type. The passive matrix type forms a device in a matrix form while crossing signal lines, whereas an active matrix type is a pixel. A thin film transistor, which is a switching element that turns on / off, is positioned for each pixel.

In recent years, the passive matrix type has many limited elements such as resolution, power consumption, and lifespan. Accordingly, active matrix type OLEDs capable of realizing high resolution and large screens have been actively studied.

1 is a view schematically showing a cross section of a general active matrix type OLED.

As shown, the OLED 10 is composed of a first substrate 1 and a second substrate 2 facing the first substrate 1, and the first and second substrates 1, 2 are connected to each other. The edges thereof are spaced apart and sealed through a failure pattern 20.

In detail, the driving thin film transistor DTr is formed in each pixel area on the first substrate 1, and the first electrode 3 and the first electrode connected to each driving thin film transistor DTr are formed. The organic light emitting layer 5 which emits light of a specific color on the upper part of (3) and the second electrode 7 are formed on the organic light emitting layer 5.

The organic light emitting layer 5 expresses colors of red, green, and blue. In general, separate organic materials 5a, 5b, and 5c emitting red, green, and blue colors are used for each pixel.

The first and second electrodes 3 and 7 and the organic light emitting layer 5 formed therebetween form an organic light emitting diode. In this case, the OLED 10 having such a structure configures the first electrode 3 as an anode and the second electrode 7 as a cathode.

On the other hand, a moisture absorbent 13 is formed on the inner surface of the second substrate 2 to block external moisture.

The OLED 10 is divided into a top emission type and a bottom emission type according to the transmission direction of light emitted through the organic light emitting layer 5, and the bottom emission method has stability and a process. While there is a high degree of freedom and limited aperture ratio, there is a problem that it is difficult to apply to high resolution products.

Therefore, in recent years, research into the top emission method having high opening ratio and high resolution has been actively conducted, but the top emission method has a narrow selection of materials as a cathode is usually positioned on the organic light emitting layer 5, and thus transmittance is high. There is a problem in that the light efficiency is lowered.

In particular, a thick transparent conductive material is deposited on the semi-transparent metal film in which a thin metal material having a low work function is deposited as the second electrode 7, which is a cathode, and the second electrode 7 is used for the organic light emitting layer 5. Since it is formed on the upper side is formed by low temperature deposition in order to minimize the damage of the organic light emitting layer (5) by heat or plasma. As a result, the second electrode 7 has a poor film quality and a high specific resistance.

Here, the high resistivity of the second electrode 7 does not apply the same cathode voltage for each pixel position, but causes a voltage difference to occur in a region close to and far from the region where the voltage is input by the IR drop. do.

This, in turn, causes nonuniformity in brightness or image characteristics, and causes a problem of increasing power consumption.

The present invention has been made in view of the above problems, and a first object of the present invention is to provide an organic light emitting device capable of preventing a voltage drop.

Accordingly, the second object is to improve the luminance and image characteristics by providing a uniform signal.

In order to achieve the object as described above, the present invention provides a pixel region and a non-pixel region, the first and second substrates facing each other; A driving thin film transistor star formed on one surface of the first substrate facing the second substrate; A first electrode connected to the driving thin film transistor and formed in each pixel area; Banks formed in the non-pixel regions between the first electrodes corresponding to the pixel regions; A column spacer formed on the bank; An organic light emitting layer formed on an entire surface of the first substrate including the column spacers; A second electrode formed on the organic light emitting layer; A red, green, and blue color filter independently configured for each pixel area on one surface of the second substrate facing the first substrate; A black matrix formed in the non-pixel region corresponding to the boundary of the red, green, and blue color filters; It is formed on the black matrix, and includes an auxiliary electrode in electrical contact with the second electrode, the light emitted from the organic light emitting layer is provided to the organic light emitting device is driven in a top light emitting method that passes through the second electrode. do.

In this case, the second electrode is characterized by consisting of a semi-transparent metal film and a transparent conductive material layer, the black matrix and the auxiliary electrode is characterized in that the double layer pattern structure.

In addition, the auxiliary electrode is characterized in that the metal material having a lower specific resistance than the second electrode, the organic light emitting layer is characterized in that the monochromatic organic light emitting layer.

The driving thin film transistor may include a semiconductor layer, a gate electrode, a source, and a drain electrode, and the first electrode may be in electrical contact with the drain electrode.

The present invention also includes forming a driving thin film transistor on one surface of a first substrate in which the pixel region and the non-pixel region are defined; Forming a first electrode electrically connected to the driving thin film transistor; Forming a bank between the first electrode corresponding to the non-pixel region; Forming a column spacer on top of the bank; Forming an organic light emitting layer on an entire surface of the substrate including the column spacers; Forming a second electrode on the organic light emitting layer; Forming a black matrix and an auxiliary electrode on one surface of the second substrate facing the first substrate corresponding to the non-pixel region; Forming red, green, and blue color filters corresponding to the pixel region with the black matrix and the auxiliary electrode interposed therebetween; It provides a method of manufacturing an organic light emitting display device comprising the step of vacuum bonding the first and second substrate such that the second electrode is in electrical contact with the auxiliary electrode.

In this case, the second electrode has a first and on a surface of a semi-transparent metal film and the transparent conductive material layer double-layer structure consisting of, and being driven in the top emission type, the black matrix and the second substrate, the auxiliary electrode After sequentially depositing the second material layer, the first and second material layers are simultaneously patterned through a mask process.

In addition, the first material layer is an opaque resin or one selected from chromium (Cr) and chromium compounds (Cr / CrOX), and the second material layer is molybdenum (Mo), titanium (Ti), silver-indium-tin -Oxide (Ag-ITO) is characterized in that one of the materials selected.

In this case, the forming of the driving thin film transistor may include forming a semiconductor layer; Forming a gate electrode and a gate electrode on the semiconductor layer; Forming an active layer and an ohmic contact layer by implanting ions into the semiconductor layer; Forming an interlayer insulating film having first and second semiconductor layer contact holes exposing the ohmic contact layer; Forming source and drain electrodes in contact with the ohmic contact layer through the first and second semiconductor layer contact holes; It provides an organic light emitting device manufacturing method comprising the step of forming a protective layer for exposing the drain electrode.

As described above, according to the present invention, the auxiliary electrode is formed on the black matrix of the second substrate on which the color filter layer is formed in the top emission type organic light emitting diode, thereby preventing the voltage drop of the cathode electrode. .

As a result, a uniform signal can be applied to the organic light emitting display device, whereby luminance and image characteristics can be made uniform.

In particular, since the auxiliary electrode is formed on the black matrix of the non-pixel region, high brightness can be realized without affecting the aperture ratio of the emission region.

Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

FIG. 2 is a cross-sectional view of one pixel including a driving thin film transistor and an organic light emitting diode as a part of a top emitting OLED according to an exemplary embodiment of the present invention.

In this case, for convenience of description, the region where the driving thin film transistor DTr is formed is referred to as the driving region DA, the region where the non-pixel region NP corresponding to the driving region DA and the organic light emitting diode E are formed. This is defined as the light emitting area PA. Although not shown in the drawing, an area in which the switching thin film transistor is formed is defined as a switching area.

As shown, the OLED 100 includes a first substrate 101 on which a driving thin film transistor DTr, a switching thin film transistor (not shown), and an organic light emitting diode E are formed, and color filters 131a, 131b, and 131c. The second substrates 102 on which) are formed face each other and face each other.

Here, the semiconductor layer 105 is formed on the first substrate 101. The semiconductor layer 105 is made of silicon corresponding to the driving region DA, and the center portion of the active region 105a and the active region form a channel. (105a) Source and drain regions 105b and 105c doped with a high concentration of impurities on both sides.

The gate insulating layer 108 is formed on the semiconductor layer 105.

A gate electrode 109 and a gate wiring extending in one direction are formed above the gate insulating film 108 to correspond to the semiconductor layer 105a.

In addition, an interlayer insulating film 111 is formed on the entire upper surface of the gate electrode 109 and the gate wiring (not shown), and the interlayer insulating film 111 and the gate insulating film 108 below it are formed on both sides of the active region 105a. And first and second semiconductor layer contact holes 111a and 111b exposing the located source and drain regions 105b and 105c, respectively.

Next, an upper portion of the interlayer insulating layer 111 including the first and second semiconductor layer contact holes 111a and 111b is spaced apart from each other in correspondence to the driving area DA, and the first and second semiconductor layer contact holes 111a and 111b. Source and drain electrodes 115 and 117 are formed in contact with the source and drain regions 105b and 105c exposed through, respectively.

A protective layer 119 is formed on the interlayer insulating layer 111 exposed between the source and drain electrodes 115 and 117 and the two electrodes 115 and 117.

In this case, the gate insulating layer formed on the semiconductor layer 105 and the semiconductor layer 105 including the source and drain electrodes 115 and 117 and the source and drain regions 105b and 105c in contact with the electrodes 115 and 117. 108 and the gate electrode 109 form a driving thin film transistor DTr.

Although not shown in the drawing, a data line (not shown) defining the pixel area P is formed to cross the gate line (not shown), and the switching thin film transistor has the same shape as the driving thin film transistor DTr in the switching area. (Not shown) is also formed.

In this case, the switching thin film transistor (not shown) is connected to the driving thin film transistor DTr, the gate line (not shown), and the data line (not shown), and the data line (not shown) is a source of the switching thin film transistor (not shown). It is connected to an electrode (not shown).

In addition, a material that is connected to the drain electrode 117 of the driving thin film transistor DTr and has a relatively high work function, for example, in the area where the image is substantially displayed above the passivation layer 119, that is, the light emitting area PA. As a component of the organic light emitting diode E, a first electrode 120 forming an anode is formed.

The first electrode 120 is formed for each pixel region, and a bank 121 is positioned between the first electrodes 120 formed for each pixel region P. FIG.

That is, the first electrode 120 is formed in a structure in which the bank 121 is used as a boundary of each pixel region P, and the pixel regions P are separated.

The column spacer 123 is formed on the bank 121, and the column spacer 123 may be easily formed on the bank 121 because the column spacer 123 is formed of an organic material.

The column spacer 123 is a connection pattern for allowing the first and second substrates 101 and 102 to be electrically connected to each other.

Next, the organic light emitting layer 125 is formed on the entire surface of the substrate 101 including the column spacer 123.

Here, the organic light emitting layer 125 may be composed of a single layer made of a light emitting material, and in order to increase the light emitting efficiency, a hole injection layer, a hole transporting layer, an emitting material layer, an electron It may be composed of multiple layers of an electron transporting layer and an electron injection layer.

In addition, a second electrode 127 forming a cathode on the entire surface of the organic light emitting layer 125 is formed.

The first and second electrodes 120 and 127 and the organic light emitting layer 125 formed therebetween form an organic light emitting diode (E).

In this case, the second electrode 127 has a double layer structure, and a double layer structure in which a transparent conductive material is thickly deposited on a semitransparent metal film in which a thin metal material having a low work function is deposited.

Therefore, the light emitted from the organic light emitting layer 125 is driven by the upper light emitting method emitted toward the second electrode 127.

On the other hand, the red (R), green (G), and blue (B) color filters 131a, 131b, and each of the pixel areas P are disposed on the second substrate 102 facing and facing the first substrate 101. 131c is repeatedly arranged in order, and a black matrix (NP) is formed in the non-pixel area NP including the boundary of each color of the red (R), green (G), and blue (B) color filters 131a, 131b, and 131c. 133 is formed.

Here, the black matrix 133 may be formed by using an opaque resin or stacking chromium (Cr) and chromium compound (Cr / CrOX).

Thus, the organic light emitting layer 125 formed on the first substrate 101 may be formed of a single color light emitting layer, and may be formed of, for example, a white light emitting layer.

In particular, the present invention is characterized in that the auxiliary electrode 200 is further formed on the black matrix 133. That is, the auxiliary electrode 200 for preventing the voltage drop of the second electrode 127, which is the cathode electrode of the organic light emitting diode E, is formed between the light emitting regions PA, which are non-pixel regions NP. will be.

Accordingly, the second electrode 127 of the organic light emitting diode E of each emission area PA is electrically connected to the auxiliary electrode 200 due to the column spacer 123 on the first substrate 101.

When the OLED 100 emits light, the light emitted from the organic light emitting layer 125 passes through the second electrode 127 and is irradiated to the entire surface. In this case, the organic light emitting layer 125 is disposed on the second electrode 127. In order to minimize damage of the organic light emitting layer 125 in the process of forming the upper portion, the second electrode 127 has a high specific resistance, so that the same voltage is not applied for each position of the pixel region P, but a voltage drop (IR drop) is applied. ), A voltage difference occurs in a region near and far from a voltage input region.

As a result, unevenness in brightness and image characteristics may occur, and power consumption may be increased. In the present invention, the second electrode 127 may be electrically connected to the auxiliary electrode 200 for each pixel region P. FIG. As a result, the voltage drop of the second electrode 127 can be prevented.

Here, the auxiliary electrode 200 is molybdenum (Mo), titanium (Ti), silver-indium-tin-oxide having a lower specific resistance than the second electrode 127 to minimize the voltage drop of the second electrode 127. Formed from (Ag-ITO) material.

In this case, when the second electrode 127 is made of ITO, the auxiliary electrode 200 is selected from a metal material which does not generate galvanic corrosion with ITO, and aluminum (Al) -based metal material is preferably excluded. Do.

The OLED 100 according to the embodiment of the present invention described above includes a first substrate 101 having a switching and driving thin film transistor DTr and an organic light emitting diode E, and color filters 131a and 131b of red, green, and blue. After the second substrates 102 having 131c are formed separately, the two substrates 101 and 102 are bonded to each other to complete the OLED 100.

When a predetermined voltage is applied to the first electrode 120 and the second electrode 127 according to the selected color signal, the OLED 100 is formed from holes and second electrodes 127 injected from the first electrode 120. The provided electrons are transported to the organic light emitting layer 125 to form excitons, and when these excitons transition from the excited state to the ground state, light is generated and emitted in the form of visible light.

At this time, since the emitted light passes through the transparent second electrode 127 to the outside, the OLED 100 implements an arbitrary image.

In this process, since the second electrode 127 is electrically connected to the auxiliary electrode 200, it is possible to prevent the voltage drop due to the distance from the voltage application portion.

As a result, the luminance and image characteristics can be made uniform.

In particular, since the auxiliary electrode 200 is formed on the black matrix 133 of the non-pixel region NP, the opening ratio of the auxiliary electrode 200 is not affected.

On the other hand, the OLED 100 according to an embodiment of the present invention is largely the first substrate 101 (hereinafter, referred to as an organic electroluminescent diode substrate) and the color filter (131a, 131b, 131c) is formed of an organic light emitting diode (E) After forming each of the second substrate 102 (hereinafter referred to as a color filter substrate) is formed by bonding through a vacuum bonding process.

At this time, the auxiliary electrode 200 formed on the black matrix 133 can be formed without an additional mask process, which will be described in more detail with reference to FIGS. 3A to 3J and FIGS. 4A to 4B.

3A to 3J are cross-sectional views of manufacturing an organic light emitting diode substrate of a top emitting OLED according to an embodiment of the present invention.

As illustrated, each pixel area P is defined as a driving area DA in which a driving thin film transistor is formed.

First, as shown in FIG. 3A, after depositing amorphous silicon on the first substrate 101, application of photoresist, exposure through a mask, development of the exposed photoresist, and exposure to the outside of the photoresist remaining after development A silicon pattern 205 is formed by performing a series of processes called etching through the amorphous silicon layer and masking such as ashing or stripping of the remaining photoresist.

In this case, the method may further include crystallizing polysilicon by heat treatment after dehydrogenation of the silicon pattern 205.

It is preferable that the first substrate 101 be one of a glass substrate, a plastic substrate, and a flexible substrate.

Next, as shown in FIG. 3B, the second insulating material and the first metal layer are sequentially deposited on the substrate 101 on which the silicon pattern 205 is formed, and then the silicon pattern 205 is formed through a mask process as described above. The second insulating material is formed as a gate insulating film 108 in the center of the c).

The first metal layer is formed as the gate electrode 109 using the gate insulating layer 108 as a lower layer.

Here, it is preferable that the second insulating material is any one of silicon nitride (SiNx) or silicon oxide (Si0 ₂ ), which is an inorganic insulating material.

The first metal layer is formed by depositing one or two or more materials selected from metal materials such as aluminum (Al) or aluminum alloy (AlNd), molybdenum (Mo), nickel (Ni), tungsten (W), and the like. It is preferable to set it as.

In this case, although not shown in the drawing, a gate wiring in one direction connected to the gate electrode 109 and defining the pixel region P together with the data wiring is formed, and a power electrode connected to the power supply wiring may be formed together.

Next, as shown in FIG. 3C, in the substrate 101 on which the silicon pattern 205 is formed, the gate insulating layer exposed to the outside of the gate electrode 109 and the gate wiring (not shown) and the power electrode (not shown) 108 is etched and removed, and then n + or p + doping is performed by ion implantation having an appropriate dose on the substrate 101.

At this time, the portion of the silicon pattern 205 of the driving region DA where the ion implantation is blocked by the gate electrode 109 forms the active region 105a, and the other ion implanted active region is the source and the drain. The regions 105b and 105c are formed.

This completes the semiconductor layer 105 including the active region 105a and the source and drain regions 105b and 105c.

Next, as shown in FIG. 3D, an inorganic insulating material is deposited on the exposed source and drain regions 105b and 105c including the gate electrode 109 and patterned by performing a mask process. An interlayer insulating film 111 having first and second semiconductor layer contact holes 111a and 111b exposing portions of the source and drain regions 105b and 105c on both sides of the gate electrode 109 is formed.

Next, as illustrated in FIG. 3E, a metal material is deposited on the entire surface of the substrate 101 having the first and second semiconductor layer contact holes 111a and 111b formed thereon, and then patterned by performing a mask process. In the driving area DA, source and drain electrodes 115 and 117 are formed in contact with the source and drain regions 105b and 105c through the first and second semiconductor layer contact holes 111a and 111b, respectively.

In this case, the source and drain electrodes 115 and 117 are spaced apart from each other with the gate electrode 109 interposed therebetween.

Next, as shown in FIG. 3F, an organic insulating material is coated on the entire surface of the substrate 101 on which the source and drain electrodes 115 and 117 are formed and patterned through a mask process, thereby protecting the protective layer 119 on the entire surface of the substrate 101. ).

In this case, the passivation layer 119 has a drain electrode contact hole 119a exposing the drain electrode 117, and the organic light emitting diode E is disposed above the driving region DA of the passivation layer 119. The first electrode 120 constituting the anode is formed as one component constituting the ().

Next, as shown in FIG. 3G, the first electrode 120 may be coated with a photosensitive organic insulating material, for example, photo acryl or benzocyclobutene (BCB), and patterned on the first electrode 120. 120, the bank 121 is formed on the upper side.

The bank 121 is formed in a matrix type having a lattice structure as a whole to distinguish the pixel areas P from each other.

Next, as illustrated in FIG. 3H, an organic material is deposited on the bank 121 and patterned, thereby forming a column spacer 123 having a wide bottom surface close to the bank 121 and narrowing upward. .

Next, as illustrated in FIG. 3I, the organic light emitting layer 125 is formed by applying or depositing an organic light emitting material on the bank 121 and the column spacer 123.

In this case, the organic light emitting material may be coated or sprayed using a nozzle coating device, a dispensing device, or an inkjet device to form an organic light emitting layer 125 for each pixel area P, and using a shadow mask. The organic light emitting layer 125 may be formed for each pixel region P by thermally depositing an organic light emitting material.

The organic light emitting layer 125 may be composed of a single layer made of a light emitting material, and in order to increase the light emitting efficiency, a hole injection layer, a hole transporting layer, an emitting material layer, an electron transporting layer It may be composed of multiple layers of an electron transporting layer and an electron injection layer.

Here, the organic light emitting layer 125 of the present invention is composed of a monochromatic light emitting layer.

Next, as illustrated in FIG. 3J, a second electrode 127 having a thick transparent conductive material deposited thereon is formed on the semi-transparent metal film having a thin work function deposited on the organic light emitting layer 125. The organic light emitting diode substrate of the top emitting OLED according to the present invention is completed.

4A to 4B are cross-sectional views of manufacturing a color filter substrate of an upper emission type OLED according to an exemplary embodiment of the present invention.

As shown in FIG. 4A, a pixel region P corresponding to each pixel region P of the organic light emitting diode substrate is defined on the second substrate 102, which is an insulating substrate.

Here, the second substrate 102 is also preferably made of either a glass substrate, a plastic substrate, or a flexible substrate.

The first and second material layers are sequentially deposited on the second substrate 102, and then patterned through a mask process to form a black matrix 133 in the non-pixel region NP including the boundary of the pixel region P. FIG. ) And the auxiliary electrode 200.

In this case, the black matrix 133 is preferably made of any one of an opaque resin or chromium (Cr) and chromium compound (Cr / CrOX).

In addition, the auxiliary electrode 200 has a low specific resistance of molybdenum (Mo), titanium (Ti), and silver-indium in order to minimize the voltage drop of the second electrode (127 of FIG. 3J) formed on the organic light emitting diode substrate. It is preferred to form with one selected from tin-oxide (Ag-ITO).

Next, as shown in FIG. 4B, a color resin layer is formed by coating photosensitive color resins representing red, green, and blue color resins on the entire surface of the second substrate 102 on which the black matrix 133 and the auxiliary electrode 200 are formed. After forming the pattern, a color filter 131 of red, green, and blue is sequentially formed through a mask process, thereby completing the color filter substrate of the top emitting OLED according to the present invention.

Subsequently, although not shown in the drawings, a seal pattern is formed along an edge of one of the organic light emitting diode substrate and the color filter substrate, which are completed through the above-described process.

Next, after the two substrates are opposed to each other, nitrogen, which is a vacuum or an inert gas, is brought into contact with the second electrode (127 of FIG. 3J) and the auxiliary electrode 200 formed on the column spacer 123 of FIG. 3J. The upper emission type OLED (100 in FIG. 2) is completed by bonding in an atmosphere.

At this time, the absorbent (not shown) is formed inside the failure turn (not shown), the absorbent (not shown) is provided to block the external moisture, which is the organic light emitting layer (125 in Figure 3j) oxygen and moisture This is to prevent this because of the easily deteriorated characteristics when exposed to.

As described above, the auxiliary electrode 200 is formed on the black matrix 133 of the second substrate 102 on which the color filter layer is formed in the top emission type OLED (100 in FIG. 2), and thus the second electrode serving as the cathode electrode. The voltage drop at 127 in FIG. 3J can be prevented.

Through this, the luminance and image characteristics of the OLED (100 in FIG. 2) can be made uniform.

In particular, since the auxiliary electrode 200 is formed on the black matrix 133 of the non-pixel region NP, the opening ratio of the auxiliary electrode 200 is not affected.

The present invention is not limited to the above embodiments, and various modifications can be made without departing from the spirit of the present invention.

1 is a schematic cross-sectional view of a typical active matrix OLED.

2 is a cross-sectional view showing a portion of a top-emitting OLED according to an embodiment of the present invention.

3A to 3J are cross-sectional views of manufacturing an organic light emitting diode substrate of a top emitting OLED according to an embodiment of the present invention.

Figures 4a to 4b is a cross-sectional view of the manufacturing step of the color filter substrate of the top-emitting OLED according to an embodiment of the present invention.

Claims (11)

First and second substrates defining pixel regions and non-pixel regions and facing each other; A driving thin film transistor star formed on one surface of the first substrate facing the second substrate; A first electrode connected to the driving thin film transistor and formed in each pixel area; Banks formed in the non-pixel regions between the first electrodes corresponding to the pixel regions; A column spacer formed on the bank; An organic light emitting layer formed on an entire surface of the first substrate including the column spacers; A second electrode formed on the organic light emitting layer; A red, green, and blue color filter independently configured for each pixel area on one surface of the second substrate facing the first substrate; A black matrix formed in the non-pixel region corresponding to the boundary of the red, green, and blue color filters; An auxiliary electrode formed on the black matrix and in electrical contact with the second electrode; The light emitting device of claim 1, wherein the light emitted from the organic light emitting layer is driven by an upper light emitting method that passes through the second electrode. The method of claim 1, And the second electrode comprises a translucent metal film and a transparent conductive material layer. The method of claim 1, And the black matrix and the auxiliary electrode have a double layer pattern structure. The method of claim 3, wherein The auxiliary electrode is an organic light emitting display device, characterized in that the metal material having a lower specific resistance than the second electrode. The method of claim 1, The organic light emitting layer is characterized in that the organic light emitting layer is a monochromatic organic light emitting layer. The method of claim 1, The driving thin film transistor may include a semiconductor layer, a gate electrode, a source, and a drain electrode, and the first electrode may be in electrical contact with the drain electrode. Forming a driving thin film transistor on one surface of the first substrate in which the pixel region and the non-pixel region are defined; Forming a first electrode electrically connected to the driving thin film transistor; Forming a bank between the first electrode corresponding to the non-pixel region; Forming a column spacer on top of the bank; Forming an organic light emitting layer on an entire surface of the substrate including the column spacers; Forming a second electrode on the organic light emitting layer; Forming a black matrix and an auxiliary electrode on one surface of the second substrate facing the first substrate corresponding to the non-pixel region; Forming red, green, and blue color filters corresponding to the pixel region with the black matrix and the auxiliary electrode interposed therebetween; Vacuum bonding the first and second substrates such that the second electrode is in electrical contact with the auxiliary electrode Organic electroluminescent device manufacturing method comprising a. The method of claim 7, wherein The second electrode has a double layer structure consisting of a semi-transparent metal film and the transparent conductive material layer, a method of manufacturing the organic electroluminescent device characterized in that the drive to the top emission system. The method of claim 7, wherein The black matrix and the auxiliary electrode sequentially deposit the first and second material layers on one surface of the second substrate, and then simultaneously pattern the first and second material layers through a mask process. Light emitting device manufacturing method. The method of claim 8, The first material layer is an opaque resin or one selected from chromium (Cr) and chromium compounds (Cr / CrOX), and the second material layer is molybdenum (Mo), titanium (Ti), silver-indium-tin-oxide An organic light emitting display device, characterized in that the material is one selected from (Ag-ITO). The method of claim 7, wherein The forming of the driving thin film transistor may include forming a semiconductor layer; Forming a gate electrode and a gate electrode on the semiconductor layer; Forming an active layer and an ohmic contact layer by implanting ions into the semiconductor layer; Forming an interlayer insulating film having first and second semiconductor layer contact holes exposing the ohmic contact layer; Forming source and drain electrodes in contact with the ohmic contact layer through the first and second semiconductor layer contact holes; Forming a protective layer for exposing the drain electrode.

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