WO2014031374A1 - Processing of flexible glass substrates and substrate stacks including flexible glass substrates and carrier substrates - Google Patents

Processing of flexible glass substrates and substrate stacks including flexible glass substrates and carrier substrates Download PDF

Info

Publication number
WO2014031374A1
WO2014031374A1 PCT/US2013/054479 US2013054479W WO2014031374A1 WO 2014031374 A1 WO2014031374 A1 WO 2014031374A1 US 2013054479 W US2013054479 W US 2013054479W WO 2014031374 A1 WO2014031374 A1 WO 2014031374A1
Authority
WO
WIPO (PCT)
Prior art keywords
bonding layer
flexible glass
substrate
glass substrate
carrier substrate
Prior art date
Application number
PCT/US2013/054479
Other languages
French (fr)
Inventor
Steven Bruce Dawes
Sean Matthew Garner
Original Assignee
Corning Incorporated
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Corning Incorporated filed Critical Corning Incorporated
Priority to KR20157007086A priority Critical patent/KR20150046219A/en
Priority to JP2015528516A priority patent/JP6329540B2/en
Priority to CN201380044389.3A priority patent/CN104919591A/en
Publication of WO2014031374A1 publication Critical patent/WO2014031374A1/en

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B7/00—Layered products characterised by the relation between layers; Layered products characterised by the relative orientation of features between layers, or by the relative values of a measurable parameter between layers, i.e. products comprising layers having different physical, chemical or physicochemical properties; Layered products characterised by the interconnection of layers
    • B32B7/04—Interconnection of layers
    • B32B7/06—Interconnection of layers permitting easy separation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B17/00—Layered products essentially comprising sheet glass, or glass, slag, or like fibres
    • B32B17/06—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/1262—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate
    • H01L27/1266—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate the substrate on which the devices are formed not being the final device substrate, e.g. using a temporary substrate

Definitions

  • the present invention relates to apparatuses and methods for processing flexible glass substrates on carrier substrates.
  • TFTs Thin Film Transistors
  • Traditional flexible electronic devices associated with PV, OLED, LCDs and patterned Thin Film Transistors (TFTs) are manufactured by processing of device structures on surfaces of glass substrates. Thicknesses of these substrates may be, for example, between 0.3 mm and 0.7 mm. Significant capital investment has been made by LCD panel device manufacturers on equipment for producing these device structures on the surfaces of the glass substrates in the 0.3 mm and 0.7 mm thickness range.
  • Glass substrates in flexible electronic applications are becoming thinner and lighter. Glass substrates having thicknesses lower than 0.5 mm, such as less than 0.3 mm, such as 0.1 mm or even thinner can be desirable for certain display applications, especially portable electronic devices such as laptop computers, handheld devices and the like.
  • Such low thickness glass substrates are typically formed by fabricating the device structures on a thicker glass substrate and then further processing the glass substrate (e.g., though chemical and/or mechanical etching) to thin the glass substrate. While this thinning process is effective, it would be desirable to fabricate the device structures directly onto the thinner glass substrates, thus eliminating any glass thinning step after the device structures are formed on the glass substrates.
  • the present concept involves bonding a thin sheet, for example, a flexible glass substrate, to a carrier substrate using a carbon bonding layer that changes structure upon its receiving an energy input, such as thermal energy and/or that is brittle, which can facilitate crack propagation through the carbon bonding layer for de-lamination of the flexible glass substrate from the carrier substrate.
  • a carbon bonding layer that changes structure upon its receiving an energy input, such as thermal energy and/or that is brittle, which can facilitate crack propagation through the carbon bonding layer for de-lamination of the flexible glass substrate from the carrier substrate.
  • PV photo-voltaic
  • OLED organic light emitting diodes
  • LCDs liquid crystal displays
  • TFT Thin Film Transistor
  • a method of processing a flexible glass substrate comprises:
  • aspect 1 or aspect 2 further comprising providing an energy input to the carbon bonding layer thereby introducing a structural change in the carbon bonding layer.
  • the method of aspect 3 wherein the energy input is thermal energy, comprising heating the carbon bonding layer to a temperature of at least about 250 °C.
  • the method of any one of aspects 1-10 wherein the flexible glass substrate has a thickness that is no greater than about 0.3 mm.
  • the carrier substrate has a thickness that is greater than a thickness of the flexible glass substrate.
  • a method of processing a flexible glass substrate comprises:
  • the method of aspect 14 further comprising providing an energy input to the carbon bonding layer for changing the structure of the carbon bonding layer and reducing a bond strength between the flexible glass substrate and the carrier substrate.
  • the carbon bonding layer is heated locally using an LED or flashlamp optical source.
  • the method of any one of aspects 14-20 wherein the flexible glass substrate has a thickness that is no greater than about 0.3 mm.
  • a substrate stack comprises:
  • the carbon bonding layer being brittle to facilitate crack propagation through the carbon bonding layer.
  • the substrate stack of aspect 22 wherein the flexible glass substrate has a thickness that is no greater than about 0.3 mm.
  • FIG. 1 is a side view of an embodiment of a substrate stack including a flexible glass substrate that is carried by a carrier substrate;
  • FIG. 2 is an exploded, perspective view of the substrate stack of FIG. 1 ;
  • FIG. 3 illustrates an embodiment of a method of processing the flexible glass substrate and substrate stack of FIG. 1 ;
  • FIG. 4 is a top view of an embodiment of a substrate stack with a flexible glass substrate and carrier substrate having different sizes;
  • FIG. 5 is a top view of another embodiment of a substrate stack with a flexible glass substrate and carrier substrate having different shapes
  • FIG. 6 is a top view of an embodiment of a substrate stack having a bonding layer applied over a glass support surface of the carrier substrate;
  • FIG. 7 is a top view of another embodiment of a substrate stack having a bonding layer applied over a glass support surface of the carrier substrate;
  • FIG. 8 is a top view of another embodiment of a substrate stack having a bonding layer applied over a glass support surface of the carrier substrate;
  • FIG. 9 illustrates absorbance of a carbon-based bonding layer
  • FIG. 10 is a top view of an embodiment of a substrate stack having a bonding layer applied over a glass support surface of the carrier substrate;
  • FIG. 11 is a top view of an embodiment of a substrate stack for forming a plurality of desired parts.
  • FIG. 12 illustrates an embodiment of a method of releasing a flexible glass substrate from a carrier substrate.
  • Embodiments described herein generally relate to processing of flexible glass substrates, sometimes referred to herein as device substrates.
  • the flexible glass substrates may be part of a substrate stack that generally includes a carrier substrate and the flexible glass substrate bonded thereto by an inorganic bonding layer.
  • inorganic materials refers to compounds that are not hydrocarbons or their derivatives.
  • the bonding layer includes an inorganic bonding material that provides a brittle or otherwise relatively easily separable bonding layer that is compatible with device (e.g., TFT) processing and provides a peel strength that enables separation of the flexible glass substrate from the carrier substrate.
  • a substrate stack 10 includes a carrier substrate 12 and a flexible glass substrate 20.
  • the carrier substrate 12 has a glass support surface 14, an opposite support surface 16 and a periphery 18.
  • the flexible glass substrate 20 has a first broad surface 22, an opposite, second broad surface 24 and a periphery 26.
  • the flexible glass substrate 20 may be "ultra-thin" having a thickness 28 of about 0.3 mm or less including but not limited to thicknesses of, for example, about 0.01-0.05 mm, about 0.05-0.1 mm, about 0.1-0.15 mm and about 0.15-0.3 mm.
  • the flexible glass substrate 20 is bonded at its first broad surface 22 to the glass support surface 14 of the carrier substrate 12 using a bonding layer 30.
  • the bonding layer may be an inorganic bonding layer comprising an inorganic bonding material.
  • the combined thickness 25 of the substrate stack 10 may be the same as single glass substrate having increased thickness as compared to the thickness of the flexible glass substrate 20 alone, which may be suitable for use with existing device processing infrastructure.
  • thickness 32 of the carrier substrate 12 may be selected to be something no greater than 0.4 mm, depending, for example, on thickness of the bonding layer 30.
  • the carrier substrate 12 may be of any suitable material including glass, glass- ceramic or ceramic, as examples, and may or may not be transparent. If made of glass, the carrier substrate 12 may be of any suitable composition including alumino-silicate, boro- silicate, alumino-boro-silicate, soda-lime-silicate, and may be either alkali containing or alkali-free depending upon its ultimate application.
  • the thickness 32 of the carrier substrate 12 may be from about 0.2 to 3 mm, for example, 0.2, 0.3, 0.4, 0.5, 0.6, 0.65, 0.7, 1.0, 2.0, or 3 mm, and may depend upon the thickness 28 of the flexible glass substrate 20, as noted above. Additionally, the carrier substrate 12 may be made of one layer, as shown, or multiple layers (including multiple thin sheets) that are bonded together to form a part of the substrate stack 10.
  • the flexible glass substrate 20 may be formed of any suitable material including glass, glass-ceramic or ceramic, as examples, and may or may not be transparent.
  • the flexible glass substrate 20 may be of any suitable composition, including alumino-silicate, boro-silicate, alumino-boro-silicate, soda- lime-silicate, and may be either alkali containing or alkali free depending upon its ultimate application.
  • the thickness 28 of the flexible glass substrate 20 may be about 0.3 mm or less, such as about 0.2 mm or less, such as about 0.1 mm, as noted above.
  • the flexible glass substrate 20 may be the same size and/or shape or of a different size and/or shape as the carrier substrate 12.
  • a releasable bonding method 40 is illustrated as part of the processing of the flexible glass substrate 20.
  • the carrier substrate 12 and the flexible glass substrate 20 are selected based on, for example, their sizes, thicknesses, materials and/or end uses.
  • the bonding layer 30 may be applied to one or both of the glass support surface 14 and the first broad surface 22 of the flexible glass substrate 20 at step 44. Any suitable methods may be used for applying the bonding layer 30, such as one or more of a pressurized application, such as through a nozzle, spreading, melting, spin casting, spraying, dipping, vacuum or atmospheric deposition, etc.
  • the flexible glass substrate 20 is adhered or otherwise bonded to the carrier substrate 12 using the bonding layer 30.
  • bonding material forming the bonding layer 30 may be heated, cooled, dried, mixed with other materials, reaction induced, pressure may be applied, etc.
  • bond strength refers to any one or more of dynamic shear strength, dynamic peel strength, static shear strength, static peel strength and combinations thereof. Peel strength, for example, is the force per unit width necessary to initiate failure (static) and/or maintain a specified rate of failure (dynamic) by means of a stress applied to one or both of the flexible glass substrate and carrier substrate in a peeling mode.
  • Shear strength is the force per unit width necessary to initiate failure (static) and/or maintain a specified rate of failure (dynamic) by means of a stress applied to one or both of the flexible glass substrate and carrier substrate in a shear mode. Any suitable methods can be used to determine bond strength including any suitable peel and/or shear strength test.
  • Steps 48 and 50 relate to releasing or de-bonding the flexible glass substrate 20 from the carrier substrate 12 so that the flexible glass substrate 20 can be removed from the carrier substrate 12.
  • the flexible glass substrate 20 may be processed, for example, in the formation of a display device, such as an LCD, OLED or TFT electronics.
  • electrical components or color filters may be applied to the second broad surface 24 of the flexible glass substrate 20.
  • final electronic components can be assembled or combined with the flexible glass substrate 20 before its release from the carrier substrate 20.
  • additional films or glass substrates can be laminated to the surface of the flexible glass substrate 12 or electrical components such as flex circuits or ICs can be bonded.
  • an energy input 47 may be applied to the bonding layer 30 that changes a structure of the bonding layer 30 at step 48.
  • the structure change decreases the bond strength of the bonding layer 30 to facilitate separation of the flexible glass substrate 20 from the carrier substrate 12 as compared to before the energy input at step 46.
  • the bonding layer 30 may include an inorganic material that does not undergo a structural change, but forms a bonding layer 30 susceptible to, for example, fracture to facilitate debonding of the flexible glass substrate 20.
  • the flexible glass substrate 20 is removed from the carrier substrate 12. The extraction may be accomplished, for example, by peeling the flexible glass substrate 20 or a portion thereof from the carrier substrate 20. A peel force is generated by applying a force F to one or both of the substrates at an angle to a plane P extending through the bonding layer 30.
  • the carrier substrate 12 and the flexible glass substrate 20 may be formed of the same, similar or of different materials.
  • the carrier substrate 12 and the flexible glass substrate 20 are formed of glass, a glass ceramic or a ceramic material.
  • the carrier substrate 12 and the flexible glass substrate 14 may be formed using the same, similar or different forming processes.
  • a fusion process e.g., downdraw process
  • forms high quality thin glass sheets that can be used in a variety of devices such as flat panel displays.
  • it may be desirable to match coefficient of thermal expansion values. Glass sheets produced in a fusion process have surfaces with superior flatness and smoothness when compared to glass sheets produced by other methods. The fusion process is described in U.S. Patent Serial Nos.
  • the flexible glass substrate 20 may also include temporary or permanent protective or other type of coating layers on one or both of its first and second broad surfaces 22 and 24.
  • One or more of the dimensions and/or shapes of the carrier substrate 12 and flexible glass substrate 20 may be about the same and/or different.
  • a carrier substrate 12 is illustrated having substantially the same shape as the flexible glass substrate 20, but having one or more dimensions that are greater than the flexible glass substrate 20.
  • Such an arrangement allows a peripheral area 52 of the carrier substrate 12 to extend outwardly beyond the flexible glass substrate 20 about an entire or at least a portion of a periphery 26 of the flexible glass substrate 20.
  • FIG. 5 illustrates an embodiment where the flexible glass substrate 20 is a different shape, having different dimensions than the carrier substrate 12.
  • Such an arrangement can allow for only portions 54 of the periphery 18 of the carrier substrate 12 to extend outwardly beyond the periphery 26 of the flexible glass substrate 20. While rectangles and circular shapes are illustrated, any suitable shapes including irregular shapes may be used depending on the desired stack configuration. Further, the carrier substrate 12 may have its edges rounded, finished and/or ground to tolerate impacts and to facilitate handling. Surface features such as grooves and/or pores may also be provided on the carrier substrate 12. The grooves, pores and/or other surface features may facilitate and/or inhibit bonding material location and/or adhesion. Selection and Application of the Bonding Layer
  • the bonding layer 30 may include one or more bonding materials that undergo a structural change upon receipt of an energy input.
  • the bonding layer 30 may include inorganic materials, and may include materials such as glass, glass ceramics, ceramics and carbon containing materials.
  • the bonding layer 30 may consist of carbon forming a carbon bonding layer.
  • Any suitable methods may be used for applying the bonding layer 30, such as one or more of a pressurized application, such as through a nozzle, spreading, melting, spin casting, spraying, dipping, vacuum or atmospheric deposition, etc.
  • the bonding layer 30 may be applied in any suitable pattern and/or shape.
  • the bonding layer 30 is applied over an area Ai of the glass support surface 14 that is at least about 50 percent of an area A2 covered by the flexible glass substrate 20, such as substantially all of the area A 2 .
  • Ai may be less than about 50 percent of A 2 , such as no more than about 25 percent of A 2 .
  • the bonding layer 30 may extend beyond the perimeter of the flexible glass substrate 20 or the bonding layer 30 may be contained within the perimeter of the flexible glass substrate 20.
  • the bonding layer 30 may be applied continuously along a predetermined path, such as area A3 that extends about a periphery of A 2 (i.e., a continuous perimeter bond), leaving an unbonded region R that is bounded by the bonding layer 30.
  • the bonding layer 30 may be formed of discrete bonding segments 60 that are spaced from each other.
  • the discrete bonding segments are in the form of individual lines. Any other suitable shapes may be used, such as circles, dots, random shapes and
  • An energy input may be provided to the bonding layer 30 that changes or is used to change a structure of the bonding layer 30.
  • the structure change decreases the bond strength of the bonding layer 30 as compared to before the energy input to facilitate separation of the flexible glass substrate 20 from the carrier substrate 12.
  • the type of the energy input depends, at least in part, on the bonding material used in the bonding layer 30. The following provides non-limiting examples of bonding materials used for providing the bonding layer 30 and input energies and are not meant to be limiting.
  • a bonding layer including carbon was formed from a phenolic resin solution. This process utilized a phenol-formaldehyde copolymer and created samples with a spin casting and thermal cure process. The process steps included:
  • the device substrates were bonded to the carrier substrates that survived shear pull tests and could be separated when a peeling force was applied due, at least in part, to the carbon bonding layer left behind after heating and the increased porosity formed in the bonding layer during the heating.
  • Both the device substrate and the carrier substrate were formed of EAGLE2000® (trade name for an alkali- free, alumino-boro-silicate glass, available from Corning Incorporated, Corning, NY) (8 cm x 12 cm) substrates 0.7 mm in thickness.
  • the bond strength between a flexible glass substrate 20 and a carrier substrate 12 can be reduced by oxidizing the carbon-based bonding layer.
  • Heating of the bonding layer 30, such as in the Example, in the presence of oxygen to a temperature of about 500 °C can cause the carbon to oxidize.
  • oxidation of the carbon bonding layer can occur at temperatures less than 500 °C. While it may not be acceptable to heat a fully assembled device substrate to up to 500 °C, in some embodiments, the bonding layer may be heated locally with a laser to a temperature that promotes oxidation.
  • absorbance of a carbon-based bonding layer 30 is illustrated.
  • a laser may be used to locally heat and oxidize the carbon-based bonding layer 30 (or any one or more of the bonding materials described herein).
  • the carbon-based bonding layer 30 may be applied as a perimeter bond (FIGS. 7 and 8) to facilitate the localized heating of the carbon-based bonding layer 30 by the laser, providing greater access to the carbon-based bonding layer 30 due to its proximity to the perimeter of the flexible glass substrate 20.
  • FIG. 9 illustrates the absorption spectrum for the carbon-based bonding layer 30 resulting from the phenolic resin described in the Example above. As can be seen, absorbance increases in the visible and UV spectrum, enabling heating of the bonding material useful for thermal oxidation. Dopants may be added to the bonding layer to increase the amount of radiation that is absorbed.
  • a bonding material may be selected having a de- bond thermal exposure of greater than 250 °C or more, such as 350 °C or more, such as 450 °C or more to reduce any likelihood of unintended de-bonding.
  • the thermal exposure should be selected to be below that which may damage any device electronics or other components.
  • de-bonding materials can be optimized for different device fabrication scenarios.
  • the application of energy 47 to the bonding layer 30 can be localized to the bonding layer 30, itself.
  • the energy source can be optimized so that the bonding layer 30 absorbs most of the energy 47 which results in lower thermal effect on the flexible substrate 20, carrier substrate 12, or any device layers on the flexible substrate 20.
  • the bonding layer 30 may include an inorganic material that does not undergo a structural change resulting in a reduction in bond strength (e.g., between about 250 °C and about 450 °C), but forms a bonding layer 30 susceptible to, for example, fracture to facilitate debonding of the flexible glass substrate 20.
  • a reduction in bond strength e.g., between about 250 °C and about 450 °C
  • two types of fracture include ductile fracture and brittle fracture. In applications where a strong, lasting bond is important between substrates, ductile fracture is often preferred given the plastic deformation that accompanies use of ductile materials, which often slows crack propagation through the ductile material.
  • brittle fracture typically results in rapid crack propagation through the brittle materials or along the interface between the bonding layer 30 and the flexible glass substrate 20 and/or the carrier substrate 12, often nearly perpendicular to the direction of the applied stress.
  • brittle fracture may be preferred with the associated rapid crack
  • a brittle bonding layer may be one where the size of the plastic zone formed around a crack tip within the bonding layer is small (e.g., no more than about 25 percent or less) compared to the thickness of the bonding layer 30 (e.g., at most about 100 ⁇ , such as at most about 50 ⁇ , such as at most about 25 ⁇ , such as at most about 10 ⁇ , such as at most about 5 ⁇ , such as between about 5 ⁇ and about 50 ⁇ ).
  • Some materials, such as glass may have a plastic zone at or nearly zero, and thus constitute a brittle bonding layer.
  • Another exemplary brittle bonding layer may be a carbon bonding layer, for example, formed in a fashion similar to that described in the Example above utilizing a phenol- formaldehyde copolymer and a thermal cure process.
  • any suitable methods may be utilized for releasing the flexible glass substrate 20 from the carrier substrate 12.
  • stresses for de-lamination may occur due to a shift in the overall tensile-compressive neutral axis during formation of the final device that utilizes the flexible glass substrate 20.
  • bonding the flexible glass substrate 20 and the carrier substrate 12 together may initially place the bond plane close to the stress neutral axis. When the bond is near the neutral axis, mechanical tensile stresses may be minimized.
  • the stress neutral axis can shift, which can drastically increase the tensile and bend stresses along the bond plane leading to at least some de-lamination.
  • De-lamination may also be initiated and/or completed using any number of devices such as pry plates, lasers, knives, score wheels, etchants and/or the flexible glass substrate may be removed manually.
  • FIG. 10 illustrates a plan view of a stack 100 includes the flexible glass substrate 20 that is bonded to the carrier substrate 12 as described above.
  • the bonding layer (represented by area Ai) may be applied over the entire (or less than the entire) footprint of the flexible glass substrate 20 on glass support surface 14 of the carrier substrate 12.
  • the flexible glass substrate 20 is subdivided into device units 102 (also represented by areas A 2 ) for further processing having perimeters 104.
  • a plurality of flexible glass substrates 20 may be bonded to one carrier substrate 12 or to multiple carrier substrates 12. In these cases, the carrier substrate 12 may be separated from the multiple flexible glass substrates 20 simultaneously or in some suitable sequential fashion.
  • any number of the device units 102 may be separated from any number of the other device units 102 by cutting along the perimeters 104. Venting may be provided to reduce any bulging of or other undesired effects on the flexible glass substrate 20.
  • a laser or other cutting device may be used for cutting the individual device units 102 from the flexible glass sheet 20. Additionally, the cutting may be performed such that only the flexible glass substrate 20 is cut or scored and not the carrier substrate 12 to enable re-use of the carrier substrate 12. Etching and/or any other cleaning process may be used to remove any residue left by the bonding layer 30. Etching may also be used to aid in the removal of the flexible glass substrate 20 from the carrier substrate 12.
  • FIG. 11 an embodiment of a method for removing a device unit 140 of the flexible glass substrate 20, e.g., that unit having electrical devices 145 or other desired structure formed thereon, from the carrier substrate 12 is shown.
  • Any number of device units 140 may be made from a flexible glass substrate 20 bonded to a carrier substrate, depending upon the size of the flexible glass substrate 20 and the size of the device units 140.
  • the flexible glass substrate may be of a Gen 2 size or larger, for example, Gen 3, Gen 4, Gen 5, Gen 8 or larger (e.g., sheet sizes from 100 mm x 100 mm to 3 meters x 3 meters or greater).
  • the flexible glass substrate 20 may be supplied as shown in FIG. 1 1. More specifically, there is provided a substrate stack 10 having a flexible glass substrate 20 and a carrier substrate 12. The flexible glass substrate 20 is bonded to the carrier substrate 12 in a bonded area 142 that surrounds a non-bonded area 144.
  • the bonded area 142 is disposed at the perimeter of the flexible glass substrate 20, completely surrounding the non-bonded area 144.
  • This continuous bonded area 142 can be used to seal any gap between the flexible glass substrate 20 and carrier substrate 12 at the perimeter of the flexible glass substrate 20 so that process fluids are not trapped as otherwise trapped process fluids may contaminate a subsequent process through which the substrate stack 10 is conveyed.
  • a discontinuous bonded area may be used.
  • a CO2 laser beam may be used to cut a perimeter 146 of the desired parts 140.
  • the CO2 laser enables full body cut (100 percent of the thickness) of the flexible glass substrate 20.
  • a laser beam is focused into a circular beam shape of small diameter on the surface 24 of the flexible glass substrate 20, and moves along the required trajectory and may be followed by a coolant nozzle.
  • the coolant nozzle may be an air nozzle, for example, which delivers a compressed air stream onto the surface of the thin sheet through a small diameter orifice. Use of water or of air- liquid mist may also be used.
  • the bonding layer 30 may be formed as a perimeter bond 152 forming a bonded area 154 and a non-bonded area 156.
  • a laser 158 directs a laser beam 160 (e.g., with between about 400 nm and 750 nm wavelength) between the flexible glass substrate 162 and the carrier substrate 12 to locally heat portions of the bonding layer 30.
  • the laser 158 may be used to locally heat and oxidize a carbon-based bonding layer 30.
  • the perimeter bond 152 can facilitate the localized heating of the carbon-based bonding layer 30 by the laser 158, providing greater access to the carbon-based bonding layer 30 due to its proximity to the perimeter of the flexible glass substrate 20 and relatively small cross- sectional area (e.g., compared to a bond across the entire width of the flexible glass substrate 12).
  • the above-described bonding layers can provide an inorganic adhesion approach that enables use of thin flexible glass substrates within existing equipment and fabrication conditions.
  • the carrier substrates can be reused with different flexible glass substrates.
  • the stacks including the carrier substrates, flexible glass substrates and bonding layers may be assembled and then shipped for further processing. Alternatively, some or none of the stacks may be assembled prior to shipping.
  • the carrier substrates need not be pristine for use as a carrier substrate.
  • the carrier substrates may have been subjected to excessive cord or streak rendering them unsuitable for use as a display device.
  • the use of the carrier substrate can avoid issues of using thin substrate directly, such as dimpling around vacuum holes and increased electrostatic issues.
  • Height of the bonding layer may be thin (e.g., about 10 ⁇ or less or between about 1 to 100 ⁇ ), which can minimize flatness issues, such as sag and facilitates use as a continuously applied film across the entire carrier substrate or applied locally, such as around the perimeter.

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Laminated Bodies (AREA)
  • Electroluminescent Light Sources (AREA)
  • Joining Of Glass To Other Materials (AREA)

Abstract

A method of processing a flexible glass substrate includes providing a substrate stack comprising the flexible glass substrate bonded to a carrier substrate using a carbon bonding layer. The flexible glass substrate is then separated from the carrier substrate.

Description

PROCESSING OF FLEXIBLE GLASS SUBSTRATES AND SUBSTRATE STACKS INCLUDING FLEXIBLE GLASS SUBSTRATES AND CARRIER SUBSTRATES
[0001] This application claims the benefit of priority under 35 U.S.C. § 119 of U.S. Provisional Application Serial No. 61/691899 filed on August 22, 2012 the content of which is relied upon and incorporated herein by reference in its entirety.
TECHNICAL FIELD
[0002] The present invention relates to apparatuses and methods for processing flexible glass substrates on carrier substrates.
BACKGROUND
[0003] Traditional flexible electronic devices associated with PV, OLED, LCDs and patterned Thin Film Transistors (TFTs) are manufactured by processing of device structures on surfaces of glass substrates. Thicknesses of these substrates may be, for example, between 0.3 mm and 0.7 mm. Significant capital investment has been made by LCD panel device manufacturers on equipment for producing these device structures on the surfaces of the glass substrates in the 0.3 mm and 0.7 mm thickness range.
[0004] Glass substrates in flexible electronic applications are becoming thinner and lighter. Glass substrates having thicknesses lower than 0.5 mm, such as less than 0.3 mm, such as 0.1 mm or even thinner can be desirable for certain display applications, especially portable electronic devices such as laptop computers, handheld devices and the like. Such low thickness glass substrates are typically formed by fabricating the device structures on a thicker glass substrate and then further processing the glass substrate (e.g., though chemical and/or mechanical etching) to thin the glass substrate. While this thinning process is effective, it would be desirable to fabricate the device structures directly onto the thinner glass substrates, thus eliminating any glass thinning step after the device structures are formed on the glass substrates.
[0005] What is desired is a carrier approach that utilizes the existing capital infrastructure of the manufacturers and enables processing of thin, flexible glass substrates, i.e., glass having a thickness no greater than about 0.3 mm thick.
SUMMARY
[0006] The present concept involves bonding a thin sheet, for example, a flexible glass substrate, to a carrier substrate using a carbon bonding layer that changes structure upon its receiving an energy input, such as thermal energy and/or that is brittle, which can facilitate crack propagation through the carbon bonding layer for de-lamination of the flexible glass substrate from the carrier substrate.
[0007] One commercial advantage to the present approach is that manufacturers will be able to utilize their existing capital investment in processing equipment while gaining the advantages of the thin glass sheets for photo-voltaic (PV), organic light emitting diodes (OLED), liquid crystal displays (LCDs), touch sensors and patterned Thin Film Transistor (TFT) electronics, for example.
[0008] According to a first aspect, a method of processing a flexible glass substrate comprises:
providing a substrate stack comprising the flexible glass substrate bonded to a carrier substrate using a carbon bonding layer; and
separating the flexible glass substrate from the carrier substrate.
[0009] According to a second aspect, there is provided the method of aspect 1 , wherein the carbon bonding layer is brittle, the method further comprising initiating a crack within the carbon bonding layer.
[0010] According to a third aspect, there is provided the method of aspect 1 or aspect 2, further comprising providing an energy input to the carbon bonding layer thereby introducing a structural change in the carbon bonding layer.
[0011] According to a fourth aspect, there is provided the method of aspect 3, wherein the energy input is thermal energy, comprising heating the carbon bonding layer to a temperature of at least about 250 °C.
[0012] According to a fifth aspect, there is provided the method of aspect 3 or aspect 4, wherein the energy input is optical energy heating the carbon bonding layer to a temperature of at least about 250 °C.
[0013] According to a sixth aspect, there is provided the method of any one of aspects 3-5, wherein the structural change includes increasing a porosity of the carbon bonding layer.
[0014] According to a seventh aspect, there is provided the method of any one of aspects 1-
6, wherein the carbon bonding layer is located along a perimeter of the flexible glass substrate.
[0015] According to an eighth aspect, there is provided the method of any one of aspects 1-
7, wherein the carbon bonding layer is heated locally using a laser.
[0016] According to a ninth aspect, there is provided the method of any one of aspects 1-8, wherein the carbon bonding layer is heated using an LED or flashlamp optical source.
[0017] According to a tenth aspect, there is provided the method of any one of aspects 1-9, further comprising applying an electrical component to the flexible glass substrate.
[0018] According to an eleventh aspect, there is provided the method of any one of aspects 1-10, wherein the flexible glass substrate has a thickness that is no greater than about 0.3 mm.
[0019] According to a twelfth aspect, there is provided the method of any one of aspects 1 - 1 1, wherein the carrier substrate comprises glass.
[0020] According to a thirteenth aspect, there is provided the method of any one of aspects 1-12, wherein the carrier substrate has a thickness that is greater than a thickness of the flexible glass substrate.
[0021] According to a fourteenth aspect, a method of processing a flexible glass substrate comprises:
providing a carrier substrate having a glass support surface;
providing a flexible glass substrate having first and second broad surfaces;
bonding the first broad surface of the flexible glass substrate to the glass support surface of the carrier substrate using a carbon bonding layer; and
initiating a crack in the carbon bonding layer for removing the flexible glass substrate from the carrier substrate.
[0022] According to a fifteenth aspect, there is provided the method of aspect 14, further comprising providing an energy input to the carbon bonding layer for changing the structure of the carbon bonding layer and reducing a bond strength between the flexible glass substrate and the carrier substrate.
[0023] According to a sixteenth aspect, there is provided the method of aspect 15, wherein the energy input is thermal energy, the method comprising heating the carbon bonding layer to a temperature of at least about 250 °C.
[0024] According to a seventeenth aspect, there is provided the method of aspect 15 or aspect 16, wherein the energy input is optical energy resulting in heating the carbon bonding layer to a temperature of at least about 250 °C.
[0025] According to an eighteenth aspect, there is provided the method of any one of aspects 14-17, wherein the carbon bonding layer is located along a perimeter of the flexible glass substrate.
[0026] According to a nineteenth aspect, there is provided the method of any one of aspects 14-18, wherein the carbon bonding layer is heated locally using a laser.
[0027] According to a twentieth aspect, there is provided the method of any one of aspects
14-20, wherein the carbon bonding layer is heated locally using an LED or flashlamp optical source. [0028] According to a twenty- first aspect, there is provided the method of any one of aspects 14-20, wherein the flexible glass substrate has a thickness that is no greater than about 0.3 mm.
[0029] According to a twenty-second aspect, a substrate stack comprises:
a carrier substrate having a glass support surface;
a flexible glass substrate supported by the glass support surface of the carrier substrate; and
a carbon bonding layer that bonds the flexible glass substrate to the carrier substrate, the carbon bonding layer being brittle to facilitate crack propagation through the carbon bonding layer.
[0030] According to a twenty-third aspect, there is provided the substrate stack of aspect 22, wherein the flexible glass substrate has a thickness that is no greater than about 0.3 mm.
[0031] According to a twenty- fourth aspect, there is provided the substrate stack of any one of aspect 22 or aspect 23, wherein the carbon bonding layer has a thickness of no greater than about 0.1 mm.
[0032] Additional features and advantages will be set forth in the detailed description which follows, and in part will be readily apparent to those skilled in the art from the description or recognized by practicing the invention as exemplified in the written description and the appended drawings and as defined in the appended claims. It is to be understood that both the foregoing general description and the following detailed description are merely exemplary of the invention, and are intended to provide an overview or framework to understanding the nature and character of the invention as it is claimed.
[0033] The accompanying drawings are included to provide a further understanding of principles of the invention, and are incorporated in and constitute a part of this specification. The drawings illustrate one or more embodiment(s), and together with the description serve to explain, by way of example, principles and operation of the invention. It is to be understood that various features of the invention disclosed in this specification and in the drawings can be used in any and all combinations.
BRIEF DESCRIPTION OF THE DRAWINGS
[0034] FIG. 1 is a side view of an embodiment of a substrate stack including a flexible glass substrate that is carried by a carrier substrate;
[0035] FIG. 2 is an exploded, perspective view of the substrate stack of FIG. 1 ;
[0036] FIG. 3 illustrates an embodiment of a method of processing the flexible glass substrate and substrate stack of FIG. 1 ; [0037] FIG. 4 is a top view of an embodiment of a substrate stack with a flexible glass substrate and carrier substrate having different sizes;
[0038] FIG. 5 is a top view of another embodiment of a substrate stack with a flexible glass substrate and carrier substrate having different shapes;
[0039] FIG. 6 is a top view of an embodiment of a substrate stack having a bonding layer applied over a glass support surface of the carrier substrate;
[0040] FIG. 7 is a top view of another embodiment of a substrate stack having a bonding layer applied over a glass support surface of the carrier substrate;
[0041] FIG. 8 is a top view of another embodiment of a substrate stack having a bonding layer applied over a glass support surface of the carrier substrate;
[0042] FIG. 9 illustrates absorbance of a carbon-based bonding layer;
[0043] FIG. 10 is a top view of an embodiment of a substrate stack having a bonding layer applied over a glass support surface of the carrier substrate;
[0044] FIG. 11 is a top view of an embodiment of a substrate stack for forming a plurality of desired parts; and
[0045] FIG. 12 illustrates an embodiment of a method of releasing a flexible glass substrate from a carrier substrate.
DETAILED DESCRIPTION
[0046] Embodiments described herein generally relate to processing of flexible glass substrates, sometimes referred to herein as device substrates. The flexible glass substrates may be part of a substrate stack that generally includes a carrier substrate and the flexible glass substrate bonded thereto by an inorganic bonding layer. As used herein, the term "inorganic materials" refers to compounds that are not hydrocarbons or their derivatives. As will be described in greater detail, the bonding layer includes an inorganic bonding material that provides a brittle or otherwise relatively easily separable bonding layer that is compatible with device (e.g., TFT) processing and provides a peel strength that enables separation of the flexible glass substrate from the carrier substrate.
[0047] Referring to FIGS. 1 and 2, a substrate stack 10 includes a carrier substrate 12 and a flexible glass substrate 20. The carrier substrate 12 has a glass support surface 14, an opposite support surface 16 and a periphery 18. The flexible glass substrate 20 has a first broad surface 22, an opposite, second broad surface 24 and a periphery 26. The flexible glass substrate 20 may be "ultra-thin" having a thickness 28 of about 0.3 mm or less including but not limited to thicknesses of, for example, about 0.01-0.05 mm, about 0.05-0.1 mm, about 0.1-0.15 mm and about 0.15-0.3 mm. [0048] The flexible glass substrate 20 is bonded at its first broad surface 22 to the glass support surface 14 of the carrier substrate 12 using a bonding layer 30. The bonding layer may be an inorganic bonding layer comprising an inorganic bonding material. When the carrier substrate 12 and the flexible glass substrate 20 are bonded to one another by the bonding layer 30, the combined thickness 25 of the substrate stack 10 may be the same as single glass substrate having increased thickness as compared to the thickness of the flexible glass substrate 20 alone, which may be suitable for use with existing device processing infrastructure. For example, if the processing equipment of a device processing infrastructure is designed for a 0.7 mm sheet, and the flexible glass substrate 20 has a thickness 28 of 0.3 mm, then thickness 32 of the carrier substrate 12 may be selected to be something no greater than 0.4 mm, depending, for example, on thickness of the bonding layer 30.
[0049] The carrier substrate 12 may be of any suitable material including glass, glass- ceramic or ceramic, as examples, and may or may not be transparent. If made of glass, the carrier substrate 12 may be of any suitable composition including alumino-silicate, boro- silicate, alumino-boro-silicate, soda-lime-silicate, and may be either alkali containing or alkali-free depending upon its ultimate application. The thickness 32 of the carrier substrate 12 may be from about 0.2 to 3 mm, for example, 0.2, 0.3, 0.4, 0.5, 0.6, 0.65, 0.7, 1.0, 2.0, or 3 mm, and may depend upon the thickness 28 of the flexible glass substrate 20, as noted above. Additionally, the carrier substrate 12 may be made of one layer, as shown, or multiple layers (including multiple thin sheets) that are bonded together to form a part of the substrate stack 10.
[0050] The flexible glass substrate 20 may be formed of any suitable material including glass, glass-ceramic or ceramic, as examples, and may or may not be transparent. When made of glass, the flexible glass substrate 20 may be of any suitable composition, including alumino-silicate, boro-silicate, alumino-boro-silicate, soda- lime-silicate, and may be either alkali containing or alkali free depending upon its ultimate application. The thickness 28 of the flexible glass substrate 20 may be about 0.3 mm or less, such as about 0.2 mm or less, such as about 0.1 mm, as noted above. As noted herein, the flexible glass substrate 20 may be the same size and/or shape or of a different size and/or shape as the carrier substrate 12.
[0051] Referring to FIG. 3, a releasable bonding method 40 is illustrated as part of the processing of the flexible glass substrate 20. At step 42, the carrier substrate 12 and the flexible glass substrate 20 are selected based on, for example, their sizes, thicknesses, materials and/or end uses. Once the carrier substrate 12 and the flexible glass substrate 20 are selected, the bonding layer 30 may be applied to one or both of the glass support surface 14 and the first broad surface 22 of the flexible glass substrate 20 at step 44. Any suitable methods may be used for applying the bonding layer 30, such as one or more of a pressurized application, such as through a nozzle, spreading, melting, spin casting, spraying, dipping, vacuum or atmospheric deposition, etc.
[0052] At step 46, the flexible glass substrate 20 is adhered or otherwise bonded to the carrier substrate 12 using the bonding layer 30. To achieve a desired bond strength between the flexible glass substrate 20 and the carrier substrate 12, bonding material forming the bonding layer 30 may be heated, cooled, dried, mixed with other materials, reaction induced, pressure may be applied, etc. As used herein, "bond strength" refers to any one or more of dynamic shear strength, dynamic peel strength, static shear strength, static peel strength and combinations thereof. Peel strength, for example, is the force per unit width necessary to initiate failure (static) and/or maintain a specified rate of failure (dynamic) by means of a stress applied to one or both of the flexible glass substrate and carrier substrate in a peeling mode. Shear strength is the force per unit width necessary to initiate failure (static) and/or maintain a specified rate of failure (dynamic) by means of a stress applied to one or both of the flexible glass substrate and carrier substrate in a shear mode. Any suitable methods can be used to determine bond strength including any suitable peel and/or shear strength test.
[0053] Steps 48 and 50 relate to releasing or de-bonding the flexible glass substrate 20 from the carrier substrate 12 so that the flexible glass substrate 20 can be removed from the carrier substrate 12. Before and/or after releasing the flexible glass substrate 20 from the carrier substrate 12, the flexible glass substrate 20 may be processed, for example, in the formation of a display device, such as an LCD, OLED or TFT electronics. For example, electrical components or color filters may be applied to the second broad surface 24 of the flexible glass substrate 20. Additionally, final electronic components can be assembled or combined with the flexible glass substrate 20 before its release from the carrier substrate 20. For example, additional films or glass substrates can be laminated to the surface of the flexible glass substrate 12 or electrical components such as flex circuits or ICs can be bonded. Once the flexible glass substrate is processed, an energy input 47 may be applied to the bonding layer 30 that changes a structure of the bonding layer 30 at step 48. As will be described below, the structure change decreases the bond strength of the bonding layer 30 to facilitate separation of the flexible glass substrate 20 from the carrier substrate 12 as compared to before the energy input at step 46. Alternatively, which will also be described below, the bonding layer 30 may include an inorganic material that does not undergo a structural change, but forms a bonding layer 30 susceptible to, for example, fracture to facilitate debonding of the flexible glass substrate 20. At step 50, the flexible glass substrate 20 is removed from the carrier substrate 12. The extraction may be accomplished, for example, by peeling the flexible glass substrate 20 or a portion thereof from the carrier substrate 20. A peel force is generated by applying a force F to one or both of the substrates at an angle to a plane P extending through the bonding layer 30.
Carrier Substrate and Flexible Glass Sheet Selection
[0054] The carrier substrate 12 and the flexible glass substrate 20 may be formed of the same, similar or of different materials. In some embodiments, the carrier substrate 12 and the flexible glass substrate 20 are formed of glass, a glass ceramic or a ceramic material. The carrier substrate 12 and the flexible glass substrate 14 may be formed using the same, similar or different forming processes. For example, a fusion process (e.g., downdraw process) forms high quality thin glass sheets that can be used in a variety of devices such as flat panel displays. Where different materials are used, it may be desirable to match coefficient of thermal expansion values. Glass sheets produced in a fusion process have surfaces with superior flatness and smoothness when compared to glass sheets produced by other methods. The fusion process is described in U.S. Patent Serial Nos. 3,338,696 and 3,682,609. Other suitable glass sheet forming methods include a float process, re-draw process and slot draw method. The flexible glass substrate 20 (and/or the carrier substrate 12) may also include temporary or permanent protective or other type of coating layers on one or both of its first and second broad surfaces 22 and 24.
[0055] One or more of the dimensions and/or shapes of the carrier substrate 12 and flexible glass substrate 20 may be about the same and/or different. For example, referring briefly to FIG. 4, a carrier substrate 12 is illustrated having substantially the same shape as the flexible glass substrate 20, but having one or more dimensions that are greater than the flexible glass substrate 20. Such an arrangement allows a peripheral area 52 of the carrier substrate 12 to extend outwardly beyond the flexible glass substrate 20 about an entire or at least a portion of a periphery 26 of the flexible glass substrate 20. As another example, FIG. 5 illustrates an embodiment where the flexible glass substrate 20 is a different shape, having different dimensions than the carrier substrate 12. Such an arrangement can allow for only portions 54 of the periphery 18 of the carrier substrate 12 to extend outwardly beyond the periphery 26 of the flexible glass substrate 20. While rectangles and circular shapes are illustrated, any suitable shapes including irregular shapes may be used depending on the desired stack configuration. Further, the carrier substrate 12 may have its edges rounded, finished and/or ground to tolerate impacts and to facilitate handling. Surface features such as grooves and/or pores may also be provided on the carrier substrate 12. The grooves, pores and/or other surface features may facilitate and/or inhibit bonding material location and/or adhesion. Selection and Application of the Bonding Layer
[0056] The bonding layer 30 may include one or more bonding materials that undergo a structural change upon receipt of an energy input. For example, the bonding layer 30 may include inorganic materials, and may include materials such as glass, glass ceramics, ceramics and carbon containing materials. In some embodiments, the bonding layer 30 may consist of carbon forming a carbon bonding layer. Various exemplary bonding materials are described below. Any suitable methods may be used for applying the bonding layer 30, such as one or more of a pressurized application, such as through a nozzle, spreading, melting, spin casting, spraying, dipping, vacuum or atmospheric deposition, etc.
[0057] The bonding layer 30 may be applied in any suitable pattern and/or shape.
Referring to FIG. 6, the bonding layer 30 is applied over an area Ai of the glass support surface 14 that is at least about 50 percent of an area A2 covered by the flexible glass substrate 20, such as substantially all of the area A2. In some embodiments, Ai may be less than about 50 percent of A2, such as no more than about 25 percent of A2. The bonding layer 30 may extend beyond the perimeter of the flexible glass substrate 20 or the bonding layer 30 may be contained within the perimeter of the flexible glass substrate 20. Referring to FIG. 7, the bonding layer 30 may be applied continuously along a predetermined path, such as area A3 that extends about a periphery of A2 (i.e., a continuous perimeter bond), leaving an unbonded region R that is bounded by the bonding layer 30. Referring to FIG. 8, the bonding layer 30 may be formed of discrete bonding segments 60 that are spaced from each other. In the embodiment of FIG. 8, the discrete bonding segments are in the form of individual lines. Any other suitable shapes may be used, such as circles, dots, random shapes and
combinations of the various shapes.
[0058] An energy input may be provided to the bonding layer 30 that changes or is used to change a structure of the bonding layer 30. The structure change decreases the bond strength of the bonding layer 30 as compared to before the energy input to facilitate separation of the flexible glass substrate 20 from the carrier substrate 12. The type of the energy input depends, at least in part, on the bonding material used in the bonding layer 30. The following provides non-limiting examples of bonding materials used for providing the bonding layer 30 and input energies and are not meant to be limiting.
Example
[0059] A bonding layer including carbon was formed from a phenolic resin solution. This process utilized a phenol-formaldehyde copolymer and created samples with a spin casting and thermal cure process. The process steps included:
a. Spin casting a diluted phenolic resin solution of 70 wt% resin and 30 wt% DI water at 3 krpm for 30 seconds onto the carrier substrate resulting in a bonding layer of no more than 10 μιη thickness.
b. Placing the carrier substrate with the bonding layer and device substrate placed thereon on a hot plate at room temperature. A weight was applied that produced a maximum bonding pressure of greater than 100 kPa.
c. Heating the hot plate to 150 °C and holding for about 10 minutes and then cooling back to room temperature.
d. Cycling the stack in a furnace in air up to 400 °C for one hour and then cooling.
[0060] Using this process, the device substrates were bonded to the carrier substrates that survived shear pull tests and could be separated when a peeling force was applied due, at least in part, to the carbon bonding layer left behind after heating and the increased porosity formed in the bonding layer during the heating. Both the device substrate and the carrier substrate were formed of EAGLE2000® (trade name for an alkali- free, alumino-boro-silicate glass, available from Corning Incorporated, Corning, NY) (8 cm x 12 cm) substrates 0.7 mm in thickness.
[0061] Additional screening tests were performed on stacks formed in accordance with the Example. The stacks were cycled in a 500 °C furnace in air for one hour, which resulted in severe oxidation of the bonding layer. This oxidation of the carbon bonding layer can be used to de-bond the device substrate from the carrier substrate. Because the oxidized carbon vaporizes, the carbon bonding layer can be easily removed to clean the carrier substrate for re-use.
[0062] The bond strength between a flexible glass substrate 20 and a carrier substrate 12 can be reduced by oxidizing the carbon-based bonding layer. Heating of the bonding layer 30, such as in the Example, in the presence of oxygen to a temperature of about 500 °C can cause the carbon to oxidize. In the presence of ozone, oxidation of the carbon bonding layer can occur at temperatures less than 500 °C. While it may not be acceptable to heat a fully assembled device substrate to up to 500 °C, in some embodiments, the bonding layer may be heated locally with a laser to a temperature that promotes oxidation.
[0063] Referring to FIG. 9, absorbance of a carbon-based bonding layer 30 is illustrated. A laser may be used to locally heat and oxidize the carbon-based bonding layer 30 (or any one or more of the bonding materials described herein). The carbon-based bonding layer 30 may be applied as a perimeter bond (FIGS. 7 and 8) to facilitate the localized heating of the carbon-based bonding layer 30 by the laser, providing greater access to the carbon-based bonding layer 30 due to its proximity to the perimeter of the flexible glass substrate 20. FIG. 9 illustrates the absorption spectrum for the carbon-based bonding layer 30 resulting from the phenolic resin described in the Example above. As can be seen, absorbance increases in the visible and UV spectrum, enabling heating of the bonding material useful for thermal oxidation. Dopants may be added to the bonding layer to increase the amount of radiation that is absorbed.
[0064] It should be noted that optimization of the bonding material should occur for the specific device fabrication process used. For example, for an a-Si or p-Si TFT process with a fabrication temperature of about 250 °C or more, such as about 350 °C or more, such as between about 250 °C and about 450 °C, a bonding material may be selected having a de- bond thermal exposure of greater than 250 °C or more, such as 350 °C or more, such as 450 °C or more to reduce any likelihood of unintended de-bonding. However, the thermal exposure should be selected to be below that which may damage any device electronics or other components. In some embodiments, there may be substantially no or little (e.g., less than about 50 percent, such as less than about 25 percent, such as less than about 10 percent, such as less than about 5 percent, such as less than about 1 percent) reduction in the bond strength of the bonding layer 30 up to the target de-bond thermal exposure. Thus, de-bonding materials can be optimized for different device fabrication scenarios. Also, the application of energy 47 to the bonding layer 30 can be localized to the bonding layer 30, itself. For example, the energy source can be optimized so that the bonding layer 30 absorbs most of the energy 47 which results in lower thermal effect on the flexible substrate 20, carrier substrate 12, or any device layers on the flexible substrate 20.
[0065] The bonding layer 30 may include an inorganic material that does not undergo a structural change resulting in a reduction in bond strength (e.g., between about 250 °C and about 450 °C), but forms a bonding layer 30 susceptible to, for example, fracture to facilitate debonding of the flexible glass substrate 20. Without wishing to be bound by theory, two types of fracture include ductile fracture and brittle fracture. In applications where a strong, lasting bond is important between substrates, ductile fracture is often preferred given the plastic deformation that accompanies use of ductile materials, which often slows crack propagation through the ductile material. On the other hand, brittle fracture typically results in rapid crack propagation through the brittle materials or along the interface between the bonding layer 30 and the flexible glass substrate 20 and/or the carrier substrate 12, often nearly perpendicular to the direction of the applied stress. Thus, in the releasable applications described herein, brittle fracture may be preferred with the associated rapid crack
propagation. As used herein, a brittle bonding layer may be one where the size of the plastic zone formed around a crack tip within the bonding layer is small (e.g., no more than about 25 percent or less) compared to the thickness of the bonding layer 30 (e.g., at most about 100 μιη, such as at most about 50 μιη, such as at most about 25 μιη, such as at most about 10 μιη, such as at most about 5 μιη, such as between about 5 μιη and about 50 μιη). Some materials, such as glass, may have a plastic zone at or nearly zero, and thus constitute a brittle bonding layer. Another exemplary brittle bonding layer may be a carbon bonding layer, for example, formed in a fashion similar to that described in the Example above utilizing a phenol- formaldehyde copolymer and a thermal cure process.
Releasing the Flexible Glass Substrate
[0066] Any suitable methods may be utilized for releasing the flexible glass substrate 20 from the carrier substrate 12. As one example, stresses for de-lamination may occur due to a shift in the overall tensile-compressive neutral axis during formation of the final device that utilizes the flexible glass substrate 20. For example, bonding the flexible glass substrate 20 and the carrier substrate 12 together may initially place the bond plane close to the stress neutral axis. When the bond is near the neutral axis, mechanical tensile stresses may be minimized. After a device is fully assembled with the flexible glass substrate 20 bonded to the carrier substrate 12, potentially with a cover glass, the stress neutral axis can shift, which can drastically increase the tensile and bend stresses along the bond plane leading to at least some de-lamination. De-lamination may also be initiated and/or completed using any number of devices such as pry plates, lasers, knives, score wheels, etchants and/or the flexible glass substrate may be removed manually.
[0067] Referring now to FIG. 10, an exemplary bonding layer 30 application pattern is illustrated where the flexible glass substrate 20 is to be divided or diced into multiple segments, sometimes referred to as device units. FIG. 10 illustrates a plan view of a stack 100 includes the flexible glass substrate 20 that is bonded to the carrier substrate 12 as described above. The bonding layer (represented by area Ai) may be applied over the entire (or less than the entire) footprint of the flexible glass substrate 20 on glass support surface 14 of the carrier substrate 12. In the illustrated embodiment, the flexible glass substrate 20 is subdivided into device units 102 (also represented by areas A2) for further processing having perimeters 104. By applying the bonding layer Ai beneath the device units 102, leakage of process fluids into regions defined by the device units 102, which may contaminate subsequent processes, or may prematurely separate the flexible glass substrate 20 (or at least a portion thereof) from the carrier substrate 12 can be minimized or prevented.
[0068] Although shown as having one flexible glass substrate 20 bonded to the carrier substrate 12, a plurality of flexible glass substrates 20 may be bonded to one carrier substrate 12 or to multiple carrier substrates 12. In these cases, the carrier substrate 12 may be separated from the multiple flexible glass substrates 20 simultaneously or in some suitable sequential fashion.
[0069] Any number of the device units 102 may be separated from any number of the other device units 102 by cutting along the perimeters 104. Venting may be provided to reduce any bulging of or other undesired effects on the flexible glass substrate 20. A laser or other cutting device may be used for cutting the individual device units 102 from the flexible glass sheet 20. Additionally, the cutting may be performed such that only the flexible glass substrate 20 is cut or scored and not the carrier substrate 12 to enable re-use of the carrier substrate 12. Etching and/or any other cleaning process may be used to remove any residue left by the bonding layer 30. Etching may also be used to aid in the removal of the flexible glass substrate 20 from the carrier substrate 12.
[0070] Referring to FIG. 11, an embodiment of a method for removing a device unit 140 of the flexible glass substrate 20, e.g., that unit having electrical devices 145 or other desired structure formed thereon, from the carrier substrate 12 is shown. Any number of device units 140 may be made from a flexible glass substrate 20 bonded to a carrier substrate, depending upon the size of the flexible glass substrate 20 and the size of the device units 140. For example, the flexible glass substrate may be of a Gen 2 size or larger, for example, Gen 3, Gen 4, Gen 5, Gen 8 or larger (e.g., sheet sizes from 100 mm x 100 mm to 3 meters x 3 meters or greater). In order to allow a user to determine an arrangement of device units 140— in terms of size, number, and shape, of the device units 140, for example - that one would like to produce from one flexible glass substrate 20 as bonded to a carrier substrate 12, the flexible glass substrate 20 may be supplied as shown in FIG. 1 1. More specifically, there is provided a substrate stack 10 having a flexible glass substrate 20 and a carrier substrate 12. The flexible glass substrate 20 is bonded to the carrier substrate 12 in a bonded area 142 that surrounds a non-bonded area 144.
[0071] The bonded area 142 is disposed at the perimeter of the flexible glass substrate 20, completely surrounding the non-bonded area 144. This continuous bonded area 142 can be used to seal any gap between the flexible glass substrate 20 and carrier substrate 12 at the perimeter of the flexible glass substrate 20 so that process fluids are not trapped as otherwise trapped process fluids may contaminate a subsequent process through which the substrate stack 10 is conveyed. However, in other embodiments, a discontinuous bonded area may be used.
[0072] A CO2 laser beam may be used to cut a perimeter 146 of the desired parts 140. The CO2 laser enables full body cut (100 percent of the thickness) of the flexible glass substrate 20. For the CO2 laser cutting, a laser beam is focused into a circular beam shape of small diameter on the surface 24 of the flexible glass substrate 20, and moves along the required trajectory and may be followed by a coolant nozzle. The coolant nozzle may be an air nozzle, for example, which delivers a compressed air stream onto the surface of the thin sheet through a small diameter orifice. Use of water or of air- liquid mist may also be used. Once the perimeter 146 of the device unit 140 is cut, the device unit 140 may be removed from the remaining flexible glass substrate 20. An energy input may then be applied to the bonding layer 30 that changes a structure of the bonding layer 30. The structure change decreases the bond strength of the bonding layer 30 to facilitate separation of the remaining flexible glass substrate 20 from the carrier substrate 12.
[0073] Referring to FIG. 12, an embodiment of a method of releasing the flexible glass substrate 20 from the carrier substrate 12 is illustrated. Once the flexible glass substrate 20 is processed to include the desired devices 150 (e.g., LCD, OLED or TFT electronics) and, for example, the device units 140 are removed, the remaining flexible glass substrate 20 (or the entire flexible glass substrate 20) is released from the carrier substrate 12. In this embodiment, the bonding layer 30 may be formed as a perimeter bond 152 forming a bonded area 154 and a non-bonded area 156. A laser 158 directs a laser beam 160 (e.g., with between about 400 nm and 750 nm wavelength) between the flexible glass substrate 162 and the carrier substrate 12 to locally heat portions of the bonding layer 30. LED and flashlamp sources are also possible that are tuned to the bonding layer 30 absorption. For example, the laser 158 may be used to locally heat and oxidize a carbon-based bonding layer 30. The perimeter bond 152 can facilitate the localized heating of the carbon-based bonding layer 30 by the laser 158, providing greater access to the carbon-based bonding layer 30 due to its proximity to the perimeter of the flexible glass substrate 20 and relatively small cross- sectional area (e.g., compared to a bond across the entire width of the flexible glass substrate 12).
[0074] The above-described bonding layers can provide an inorganic adhesion approach that enables use of thin flexible glass substrates within existing equipment and fabrication conditions. The carrier substrates can be reused with different flexible glass substrates. The stacks including the carrier substrates, flexible glass substrates and bonding layers may be assembled and then shipped for further processing. Alternatively, some or none of the stacks may be assembled prior to shipping. The carrier substrates need not be pristine for use as a carrier substrate. For example, the carrier substrates may have been subjected to excessive cord or streak rendering them unsuitable for use as a display device. The use of the carrier substrate can avoid issues of using thin substrate directly, such as dimpling around vacuum holes and increased electrostatic issues. Height of the bonding layer may be thin (e.g., about 10 μιη or less or between about 1 to 100 μιη), which can minimize flatness issues, such as sag and facilitates use as a continuously applied film across the entire carrier substrate or applied locally, such as around the perimeter.
[0075] In the previous detailed description, for purposes of explanation and not limitation, example embodiments disclosing specific details are set forth to provide a thorough understanding of various principles of the present invention. However, it will be apparent to one having ordinary skill in the art, having had the benefit of the present disclosure, that the present invention may be practiced in other embodiments that depart from the specific details disclosed herein. Moreover, descriptions of well-known devices, methods and materials may be omitted so as not to obscure the description of various principles of the present invention. Finally, wherever applicable, like reference numerals refer to like elements.
[0076] Directional terms as used herein - for example up, down, right, left, front, back, top, bottom - are made only with reference to the figures as drawn and are not intended to imply absolute orientation.
[0077] It should be emphasized that the above-described embodiments of the present invention, particularly any "preferred" embodiments, are merely possible examples of implementations, merely set forth for a clear understanding of various principles of the invention. Many variations and modifications may be made to the above-described embodiments of the invention without departing substantially from the spirit and various principles of the invention. All such modifications and variations are intended to be included herein within the scope of this disclosure and the following claims.

Claims

What is claimed is:
1. A method of processing a flexible glass substrate, the method comprising:
providing a substrate stack comprising the flexible glass substrate bonded to a carrier substrate using a carbon bonding layer; and
separating the flexible glass substrate from the carrier substrate.
2. The method of claim 1 , wherein the carbon bonding layer is brittle, the method further comprising initiating a crack within the carbon bonding layer.
3. The method of claim 1 further comprising providing an energy input to the carbon bonding layer thereby introducing a structural change in the carbon bonding layer.
4. The method of claim 3 , wherein the energy input is optical energy heating the carbon bonding layer to a temperature of at least 250 °C.
5. The method of claim 3, wherein the structural change includes increasing a porosity of the carbon bonding layer.
6. The method of claim 3, wherein the carbon bonding layer is heated using a laser, an LED or flashlamp optical source.
7. The method of any one of claims 1-6 further comprising applying an electrical component to the flexible glass substrate.
8. A substrate stack comprising:
a carrier substrate having a glass support surface;
a flexible glass substrate supported by the glass support surface of the carrier substrate; and
a carbon bonding layer that bonds the flexible glass substrate to the carrier substrate, the carbon bonding layer being brittle to facilitate crack propagation through the carbon bonding layer.
9. The substrate stack of claim 8, wherein the flexible glass substrate has a thickness that is no greater than about 0.3 mm.
10. The substrate stack of claim 8 or claim 9, wherein the carbon bonding layer has a thickness of no greater than about 0.1 mm.
PCT/US2013/054479 2012-08-22 2013-08-12 Processing of flexible glass substrates and substrate stacks including flexible glass substrates and carrier substrates WO2014031374A1 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
KR20157007086A KR20150046219A (en) 2012-08-22 2013-08-12 Rocessing of flexible glass substrates and substrate stacks including flexible glass substrates and carrier substrates
JP2015528516A JP6329540B2 (en) 2012-08-22 2013-08-12 Processing of flexible glass substrate and substrate laminate including flexible glass substrate and carrier substrate
CN201380044389.3A CN104919591A (en) 2012-08-22 2013-08-12 Processing of flexible glass substrates and substrate stacks including flexible glass substrates and carrier substrates

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201261691899P 2012-08-22 2012-08-22
US61/691,899 2012-08-22

Publications (1)

Publication Number Publication Date
WO2014031374A1 true WO2014031374A1 (en) 2014-02-27

Family

ID=49029224

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2013/054479 WO2014031374A1 (en) 2012-08-22 2013-08-12 Processing of flexible glass substrates and substrate stacks including flexible glass substrates and carrier substrates

Country Status (5)

Country Link
JP (1) JP6329540B2 (en)
KR (1) KR20150046219A (en)
CN (1) CN104919591A (en)
TW (1) TW201412554A (en)
WO (1) WO2014031374A1 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016112082A1 (en) * 2015-01-06 2016-07-14 Corning Incorporated A glass-carrier assembly and methods for processing a flexible glass sheet
EP3245263A1 (en) * 2015-01-14 2017-11-22 EV Group E. Thallner GmbH Method and device for detaching a substrate from a substrate stack
CN107771168A (en) * 2015-04-22 2018-03-06 康宁股份有限公司 The method that edge finishing is carried out to laminated glass construction
WO2018098430A1 (en) * 2016-11-28 2018-05-31 Ares Materials Inc. Temporary bonding layer for flexible electronics fabrication

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101673417B1 (en) 2015-07-14 2016-11-07 에스피텍 주식회사 Manufacturing Method for Reducing Thickness Deflection of Ultra-Thin Type Glass Plate
KR101661278B1 (en) 2015-07-14 2016-09-29 에스피텍 주식회사 Manufacturing Method of Ultra-Thin Type Glass Plate
TWI767948B (en) 2016-10-31 2022-06-21 美商康寧公司 Layered bendable puncture resistant glass article and method of making
CN112313790A (en) * 2018-03-20 2021-02-02 深圳市柔宇科技股份有限公司 Flexible member, electronic device, and method for peeling flexible cover
KR20220052123A (en) 2020-10-20 2022-04-27 동우 화인켐 주식회사 Treating apparatus for ultra thin glass and manufaturing method of ultra thin glass using the same
JP2023005724A (en) * 2021-06-29 2023-01-18 日本電気硝子株式会社 Manufacturing method of assembly, and manufacturing apparatus of assembly

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050001201A1 (en) * 2003-07-03 2005-01-06 Bocko Peter L. Glass product for use in ultra-thin glass display applications
US20080053604A1 (en) * 2006-08-30 2008-03-06 Gi Heon Kim Method of stacking flexible substrate
US20090266471A1 (en) * 2008-04-29 2009-10-29 Myung-Hwan Kim Method of fabricating flexible display device
WO2011089963A1 (en) * 2010-01-21 2011-07-28 電気化学工業株式会社 Process for producing laminate of light-transmitting rigid plates and device for laminating light-transmitting rigid plates
EP2351718A1 (en) * 2008-10-23 2011-08-03 Asahi Glass Company Limited Glass substrate laminated device and method for producing laminate glass substrate
US20120009703A1 (en) * 2009-01-09 2012-01-12 Feinstein Casey J Thin glass processing using a carrier
WO2012056867A1 (en) * 2010-10-29 2012-05-03 東京応化工業株式会社 Stacked body and method for detaching stacked body

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4405246B2 (en) * 2003-11-27 2010-01-27 スリーエム イノベイティブ プロパティズ カンパニー Manufacturing method of semiconductor chip
JP4930161B2 (en) * 2006-05-08 2012-05-16 旭硝子株式会社 Thin glass laminated body, display device manufacturing method using thin glass laminated body, and supporting glass substrate
JP4866210B2 (en) * 2006-11-08 2012-02-01 信越化学工業株式会社 Method for producing single crystal silicon solar cell
WO2009128359A1 (en) * 2008-04-17 2009-10-22 旭硝子株式会社 Glass laminate, display panel with support, method for producing glass laminate and method for manufacturing display panel with support
TW201033000A (en) * 2009-01-09 2010-09-16 Asahi Glass Co Ltd Glass laminate and manufacturing method therefor
CN102596565B (en) * 2009-08-27 2014-09-10 旭硝子株式会社 Multilayer structure with flexible base material and support, panel for use in electronic device provided with support and production method for panel for use in electronic device
JP5562597B2 (en) * 2009-08-28 2014-07-30 荒川化学工業株式会社 SUPPORT, GLASS SUBSTRATE LAMINATE, DISPLAY DEVICE PANEL WITH SUPPORT AND METHOD FOR PRODUCING DISPLAY DEVICE PANEL
CN102574371B (en) * 2009-10-20 2015-10-07 旭硝子株式会社 Glass laminate, the display unit panel being with supporting mass, display unit panel, display unit and their manufacture method
WO2012060199A1 (en) * 2010-11-05 2012-05-10 旭硝子株式会社 Laminate body, panel for use in display device with support board, panel for use in display device, and display device
JP6006569B2 (en) * 2012-07-23 2016-10-12 東京応化工業株式会社 Laminate and method for producing laminate

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050001201A1 (en) * 2003-07-03 2005-01-06 Bocko Peter L. Glass product for use in ultra-thin glass display applications
US20080053604A1 (en) * 2006-08-30 2008-03-06 Gi Heon Kim Method of stacking flexible substrate
US20090266471A1 (en) * 2008-04-29 2009-10-29 Myung-Hwan Kim Method of fabricating flexible display device
EP2351718A1 (en) * 2008-10-23 2011-08-03 Asahi Glass Company Limited Glass substrate laminated device and method for producing laminate glass substrate
US20120009703A1 (en) * 2009-01-09 2012-01-12 Feinstein Casey J Thin glass processing using a carrier
WO2011089963A1 (en) * 2010-01-21 2011-07-28 電気化学工業株式会社 Process for producing laminate of light-transmitting rigid plates and device for laminating light-transmitting rigid plates
US20120298285A1 (en) * 2010-01-21 2012-11-29 Denki Kagaku Kogyo Kabushiki Kaisha Method of manufacturing translucent rigid substrate laminate and translucent rigid substrate bonding apparatus
WO2012056867A1 (en) * 2010-10-29 2012-05-03 東京応化工業株式会社 Stacked body and method for detaching stacked body
US20130213582A1 (en) * 2010-10-29 2013-08-22 Tokyo Ohka Kogyo Co., Ltd. Laminate and method for separating the same

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
CHOE C R ET AL: "Effect of processing parameters on the mechanical properties of carbonized phenolic resin", CARBON, ELSEVIER, OXFORD, GB, vol. 30, no. 2, 1 January 1992 (1992-01-01), pages 247 - 249, XP024357137, ISSN: 0008-6223, [retrieved on 19920101], DOI: 10.1016/0008-6223(92)90086-C *
KATSUYA INOMATA ET AL: "Activation-free preparation of porous carbon by carbonizing phenolic resin containing pore-forming substance", ENERGY PROCEDIA, vol. 14, 8 March 2012 (2012-03-08), pages 626 - 631, XP028466706, ISSN: 1876-6102, [retrieved on 20120308], DOI: 10.1016/J.EGYPRO.2011.12.986 *
LAUSEVIC Z ET AL: "Mechanical properties and chemistry of carbonization of Phenol formaldehyde resin", CARBON, ELSEVIER, OXFORD, GB, vol. 24, no. 5, 1 January 1986 (1986-01-01), pages 575 - 580, XP024032166, ISSN: 0008-6223, [retrieved on 19860101], DOI: 10.1016/0008-6223(86)90148-X *
YAMASHITA Y ET AL: "A study on carbonization of phenol-formaldehyde resin labelled with deuterium and <13>C", CARBON, ELSEVIER, OXFORD, GB, vol. 19, no. 2, 1 January 1981 (1981-01-01), pages 89 - 94, XP024034333, ISSN: 0008-6223, [retrieved on 19810101], DOI: 10.1016/0008-6223(81)90112-3 *

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016112082A1 (en) * 2015-01-06 2016-07-14 Corning Incorporated A glass-carrier assembly and methods for processing a flexible glass sheet
CN107406294A (en) * 2015-01-06 2017-11-28 康宁股份有限公司 For processing the glass carrier component and method of flexible glass plate
TWI689416B (en) * 2015-01-06 2020-04-01 美商康寧公司 A glass-carrier assembly and methods for processing a flexible glass sheet
EP3245263A1 (en) * 2015-01-14 2017-11-22 EV Group E. Thallner GmbH Method and device for detaching a substrate from a substrate stack
CN107567655A (en) * 2015-01-14 2018-01-09 Ev 集团 E·索尔纳有限责任公司 For the method and apparatus from substrate heap separation substrate
US20180022079A1 (en) * 2015-01-14 2018-01-25 Ev Group E. Thallner Gmbh Method and device for detaching a substrate from a substrate stack
JP2018507539A (en) * 2015-01-14 2018-03-15 エーファウ・グループ・エー・タルナー・ゲーエムベーハー Method and apparatus for peeling a substrate from a substrate stack
CN107771168A (en) * 2015-04-22 2018-03-06 康宁股份有限公司 The method that edge finishing is carried out to laminated glass construction
US20180154493A1 (en) * 2015-04-22 2018-06-07 Corning Incorporated Methods of edge finishing laminated glass structures
WO2018098430A1 (en) * 2016-11-28 2018-05-31 Ares Materials Inc. Temporary bonding layer for flexible electronics fabrication
US10840120B2 (en) 2016-11-28 2020-11-17 Ares Materials Inc. Temporary bonding layer for flexible electronics fabrication

Also Published As

Publication number Publication date
TW201412554A (en) 2014-04-01
JP2015534528A (en) 2015-12-03
JP6329540B2 (en) 2018-05-23
KR20150046219A (en) 2015-04-29
CN104919591A (en) 2015-09-16

Similar Documents

Publication Publication Date Title
WO2014031374A1 (en) Processing of flexible glass substrates and substrate stacks including flexible glass substrates and carrier substrates
TWI617440B (en) Method of manufacturing display panel
WO2013151075A1 (en) Glass film fracturing method and glass film laminate body
JP2009535664A (en) Porous processing carrier for flexible substrates
WO2014031372A1 (en) Processing flexible glass substrates
TW201206697A (en) Glass laminate, glass laminate manufacturing method, display panel manufacturing method, and display panel obtained by means of display panel manufacturing method
US20110026236A1 (en) Glass laminate, display panel with support, method for producing glass laminate and method for manufacturing display panel with support
WO2015190418A1 (en) Method for manufacturing glass film, and method for manufacturing electronic device including glass film
KR102267241B1 (en) Glass film laminate and liquid crystal panel manufacturing method
WO2011071067A1 (en) Glass film laminate, glass roll of the laminate, and method for producing glass roll
WO2014030521A1 (en) Method for cutting composite sheet, method for cutting glass sheet, and cut piece of composite sheet
JP2010018505A (en) Glass laminate, panel for display device with supporting body, panel for display device, display device, and methods for manufacturing them
JP2014166944A (en) Method of producing glass film
WO2017045202A1 (en) Method of manufacturing flexible display device
TW201434653A (en) An electronic device and fabricating method thereof
TW201632359A (en) A glass-carrier assembly and methods for processing a flexible glass sheet
JP2019537265A (en) How to process a substrate
KR102254291B1 (en) Method for manufacturing glass film laminate, glass film laminate, and method for manufacturing electronic device
TWI526316B (en) A method for removing the resin film and a method for producing the layered product
KR102133780B1 (en) Method for processing laminated sheet and processed laminated sheet
WO2017018136A1 (en) Method for producing glass film, and method for producing electronic device including glass film
JP2016096218A (en) Method of manufacturing lamination substrate, and method of manufacturing electronic device
WO2017066924A1 (en) Method for post-processing of bonded article
WO2014179137A1 (en) Temperature assisted processing of flexible glass substrates
JP6327580B2 (en) Glass film laminate and method for producing electronic device

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 13752765

Country of ref document: EP

Kind code of ref document: A1

ENP Entry into the national phase

Ref document number: 2015528516

Country of ref document: JP

Kind code of ref document: A

NENP Non-entry into the national phase

Ref country code: DE

ENP Entry into the national phase

Ref document number: 20157007086

Country of ref document: KR

Kind code of ref document: A

122 Ep: pct application non-entry in european phase

Ref document number: 13752765

Country of ref document: EP

Kind code of ref document: A1