WO2009104839A1 - The differential vco and quadrature vco using center-tapped cross-coupling of transformer - Google Patents
The differential vco and quadrature vco using center-tapped cross-coupling of transformer Download PDFInfo
- Publication number
- WO2009104839A1 WO2009104839A1 PCT/KR2008/003331 KR2008003331W WO2009104839A1 WO 2009104839 A1 WO2009104839 A1 WO 2009104839A1 KR 2008003331 W KR2008003331 W KR 2008003331W WO 2009104839 A1 WO2009104839 A1 WO 2009104839A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- variable capacitance
- node
- differential
- vco
- capacitance units
- Prior art date
Links
- 238000006880 cross-coupling reaction Methods 0.000 title claims abstract description 11
- 230000010355 oscillation Effects 0.000 claims abstract description 20
- 230000003321 amplification Effects 0.000 claims description 16
- 238000003199 nucleic acid amplification method Methods 0.000 claims description 16
- 230000008878 coupling Effects 0.000 claims description 5
- 238000010168 coupling process Methods 0.000 claims description 5
- 238000005859 coupling reaction Methods 0.000 claims description 5
- 239000000758 substrate Substances 0.000 abstract description 9
- 238000010586 diagram Methods 0.000 description 12
- 230000007423 decrease Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 1
- 230000001149 cognitive effect Effects 0.000 description 1
- 230000010339 dilation Effects 0.000 description 1
- 230000006855 networking Effects 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
- H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
- H03B5/1228—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device the amplifier comprising one or more field effect transistors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B27/00—Generation of oscillations providing a plurality of outputs of the same frequency but differing in phase, other than merely two anti-phase outputs
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
- H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
- H03B5/1206—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification
- H03B5/1212—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification the amplifier comprising a pair of transistors, wherein an output terminal of each being connected to an input terminal of the other, e.g. a cross coupled pair
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
- H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
- H03B5/1237—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator
- H03B5/124—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the means comprising a voltage dependent capacitance
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
- H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
- H03B5/1237—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator
- H03B5/1293—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator having means for achieving a desired tuning characteristic, e.g. linearising the frequency characteristic across the tuning voltage range
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
- H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
- H03B5/1296—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device the feedback circuit comprising a transformer
Definitions
- the first and second variable capacitance units may have the same capacitance, and the third and fourth variable capacitance units may have the same capacitance which is different from that of the first and second variable capacitance units. That is, the first and second variable capacitance units and the third and fourth variable capacitance units may have a different frequency tuning range.
- variable capacitance units for frequency variation are divided into variable capacitance units for coarse tuning and variable capacitance units for fine tuning. Therefore, it is possible to obtain a wide tuning range while a voltage os- dilation gain is reduced.
- FIG. 3 is a circuit diagram for explaining a current reuse structure of the VCO shown in FIG. 2.
- the first NMOS transistor NMl is connected between a third node N3 and a fifth node N5, and the second NMOS transistor NM2 is connected between a fourth node N4 and the fifth node N5.
- the third variable capacitance unit CV3 is connected between the second control voltage VC2 and the third node N3, and the fourth variable capacitance unit CV4 is connected between the second control voltage VC2 and the fourth node N4.
- a third NMOS transistor NM3 for supplying a bias current is connected between the fifth node N5 and a ground terminal GND.
- the first PMOS transistor PMl and the second PMS transistor PM2 are differentially cross-coupled to the second NMOS transistor NM2 and the first NMOS transistor NMl, respectively. This will be specifically described as follows.
- the first NMOS transistor NMl and the second NMOS transistor NM2 are cross-coupled to the second PMOS transistor PM2 and the first PMOS transistor PMl, respectively, through the transformer 231.
- FIG. 3 is a circuit diagram for explaining the current reuse structure of the VCO shown in FIG. 2.
- -g ac tive represents the sum of negative transconductances [(-gn)+(-gp)] when the first and second NMOS transistors NMl and NM2 and the first and second PMOS transistors PMl and PM2 are connected in series.
- FIG. 4(a) is a circuit diagram showing a structure in which one or more resistors are connected between the first and second variable capacitance units CVl and CV2 and between the third and fourth variable capacitance units CV3 and CV4, such that the variable capacitance units shown in FIG. 2 operate linearly.
- FIG. 4(b) is a diagram showing a variable capacitance range of the variable capacitance units shown in FIG. 4(a).
Abstract
Description
Claims
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010541380A JP5087680B2 (en) | 2008-02-21 | 2008-06-13 | Differential voltage controlled oscillator and quadrature voltage controlled oscillator using transformer coupling |
US12/867,798 US8212625B2 (en) | 2008-02-21 | 2008-06-13 | Differential VCO and quadrature VCO using center-tapped cross-coupling of transformer |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2008-0015749 | 2008-02-21 | ||
KR20080015749 | 2008-02-21 | ||
KR1020080043936A KR100952424B1 (en) | 2008-02-21 | 2008-05-13 | The Differential VCO and quadrature VCO using center-tapped cross-coupling of transformer |
KR10-2008-0043936 | 2008-05-13 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2009104839A1 true WO2009104839A1 (en) | 2009-08-27 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/KR2008/003331 WO2009104839A1 (en) | 2008-02-21 | 2008-06-13 | The differential vco and quadrature vco using center-tapped cross-coupling of transformer |
Country Status (1)
Country | Link |
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WO (1) | WO2009104839A1 (en) |
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2011031389A3 (en) * | 2009-09-10 | 2011-05-19 | Intel Corporation | A low phase noise voltage controlled oscillator |
US20110148535A1 (en) * | 2009-12-21 | 2011-06-23 | Electronics And Telecommunications Research Institute | Voltage controlled oscillator |
CN102195592A (en) * | 2010-03-17 | 2011-09-21 | 精工爱普生株式会社 | Circuit device, electronic apparatus and power supply circuit |
US9819307B2 (en) | 2015-06-19 | 2017-11-14 | Qualcomm Incorporated | Low power current re-using transformer-based dual-band voltage controlled oscillator |
US9900060B1 (en) * | 2015-05-12 | 2018-02-20 | Superlative Semiconductor, LLC | Tunable microwave network and application to transmit leakage cancellation circuit in an RFID interrogator |
CN108631730A (en) * | 2017-03-16 | 2018-10-09 | 英飞凌科技股份有限公司 | System and method for double-core VCO |
CN110719070A (en) * | 2019-09-29 | 2020-01-21 | 天津大学 | Low-power consumption voltage-controlled oscillator based on dynamic threshold technology |
CN111342775A (en) * | 2018-12-19 | 2020-06-26 | 天津大学青岛海洋技术研究院 | Dual-core oscillator based on current multiplexing and transformer coupling buffer amplifier |
CN111641391A (en) * | 2020-05-09 | 2020-09-08 | 上海华虹宏力半导体制造有限公司 | Differential quadrature output low noise amplifier |
US10972150B2 (en) | 2017-12-04 | 2021-04-06 | Superlative Semiconductor, LLC | Low-cost software-defined RFID interrogator with active transmit leakage cancellation |
CN115037283A (en) * | 2022-08-12 | 2022-09-09 | 山东华翼微电子技术股份有限公司 | High-speed phase jitter physical random source circuit and working method thereof |
Citations (5)
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---|---|---|---|---|
US5912596A (en) * | 1998-01-26 | 1999-06-15 | International Business Machines Corporation | Apparatus and method for frequency tuning an LC oscillator in a integrated clock circuit |
US6121850A (en) * | 1998-08-19 | 2000-09-19 | International Business Machines Corporation | Digitally adjustable inductive element adaptable to frequency tune an LC oscillator |
US6456167B1 (en) * | 2000-07-13 | 2002-09-24 | Industrial Technology Research Institute | Quadrature oscillator |
US6621363B2 (en) * | 2001-11-20 | 2003-09-16 | Samsung Electronics Co., Ltd. | Differential type voltage controlled oscillator |
KR20050034345A (en) * | 2003-10-09 | 2005-04-14 | 한국과학기술원 | Quadrature voltage controled push-push oscillator with transformer based lc-resonators and pinch-off clipping |
-
2008
- 2008-06-13 WO PCT/KR2008/003331 patent/WO2009104839A1/en active Application Filing
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
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US5912596A (en) * | 1998-01-26 | 1999-06-15 | International Business Machines Corporation | Apparatus and method for frequency tuning an LC oscillator in a integrated clock circuit |
US6121850A (en) * | 1998-08-19 | 2000-09-19 | International Business Machines Corporation | Digitally adjustable inductive element adaptable to frequency tune an LC oscillator |
US6456167B1 (en) * | 2000-07-13 | 2002-09-24 | Industrial Technology Research Institute | Quadrature oscillator |
US6621363B2 (en) * | 2001-11-20 | 2003-09-16 | Samsung Electronics Co., Ltd. | Differential type voltage controlled oscillator |
KR20050034345A (en) * | 2003-10-09 | 2005-04-14 | 한국과학기술원 | Quadrature voltage controled push-push oscillator with transformer based lc-resonators and pinch-off clipping |
Cited By (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7961056B2 (en) | 2009-09-10 | 2011-06-14 | Intel Corporation | Low phase noise voltage controlled oscillator |
WO2011031389A3 (en) * | 2009-09-10 | 2011-05-19 | Intel Corporation | A low phase noise voltage controlled oscillator |
US20110148535A1 (en) * | 2009-12-21 | 2011-06-23 | Electronics And Telecommunications Research Institute | Voltage controlled oscillator |
US8436689B2 (en) * | 2009-12-21 | 2013-05-07 | Electronics And Telecommunications Research Institute | Multiple phase voltage controlled oscillator including a resonant circuit and negative resistance circuit |
CN102195592A (en) * | 2010-03-17 | 2011-09-21 | 精工爱普生株式会社 | Circuit device, electronic apparatus and power supply circuit |
JP2011199385A (en) * | 2010-03-17 | 2011-10-06 | Seiko Epson Corp | Circuit device, electronic equipment, and power supply circuit |
US10187120B1 (en) | 2015-05-12 | 2019-01-22 | Superlative Semiconductor, LLC | Tunable microwave network and application to transmit leakage cancellation circuit in an RFID interrogator |
US9900060B1 (en) * | 2015-05-12 | 2018-02-20 | Superlative Semiconductor, LLC | Tunable microwave network and application to transmit leakage cancellation circuit in an RFID interrogator |
US9819307B2 (en) | 2015-06-19 | 2017-11-14 | Qualcomm Incorporated | Low power current re-using transformer-based dual-band voltage controlled oscillator |
CN108631730A (en) * | 2017-03-16 | 2018-10-09 | 英飞凌科技股份有限公司 | System and method for double-core VCO |
CN108631730B (en) * | 2017-03-16 | 2022-04-15 | 英飞凌科技股份有限公司 | System and method for dual core VCO |
US10972150B2 (en) | 2017-12-04 | 2021-04-06 | Superlative Semiconductor, LLC | Low-cost software-defined RFID interrogator with active transmit leakage cancellation |
CN111342775A (en) * | 2018-12-19 | 2020-06-26 | 天津大学青岛海洋技术研究院 | Dual-core oscillator based on current multiplexing and transformer coupling buffer amplifier |
CN111342775B (en) * | 2018-12-19 | 2023-07-14 | 天津大学青岛海洋技术研究院 | Dual-core oscillator based on current multiplexing and transformer coupling buffer amplifier |
CN110719070A (en) * | 2019-09-29 | 2020-01-21 | 天津大学 | Low-power consumption voltage-controlled oscillator based on dynamic threshold technology |
CN110719070B (en) * | 2019-09-29 | 2023-05-12 | 天津大学 | Low-power consumption voltage-controlled oscillator based on dynamic threshold technology |
CN111641391A (en) * | 2020-05-09 | 2020-09-08 | 上海华虹宏力半导体制造有限公司 | Differential quadrature output low noise amplifier |
CN115037283A (en) * | 2022-08-12 | 2022-09-09 | 山东华翼微电子技术股份有限公司 | High-speed phase jitter physical random source circuit and working method thereof |
CN115037283B (en) * | 2022-08-12 | 2022-10-21 | 山东华翼微电子技术股份有限公司 | High-speed phase jitter physical random source circuit and working method thereof |
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