WO2009104839A1 - The differential vco and quadrature vco using center-tapped cross-coupling of transformer - Google Patents

The differential vco and quadrature vco using center-tapped cross-coupling of transformer Download PDF

Info

Publication number
WO2009104839A1
WO2009104839A1 PCT/KR2008/003331 KR2008003331W WO2009104839A1 WO 2009104839 A1 WO2009104839 A1 WO 2009104839A1 KR 2008003331 W KR2008003331 W KR 2008003331W WO 2009104839 A1 WO2009104839 A1 WO 2009104839A1
Authority
WO
WIPO (PCT)
Prior art keywords
variable capacitance
node
differential
vco
capacitance units
Prior art date
Application number
PCT/KR2008/003331
Other languages
French (fr)
Inventor
Young Jae Lee
Cheon Soo Kim
Original Assignee
Electronics And Telecommunications Research Institute
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020080043936A external-priority patent/KR100952424B1/en
Application filed by Electronics And Telecommunications Research Institute filed Critical Electronics And Telecommunications Research Institute
Priority to JP2010541380A priority Critical patent/JP5087680B2/en
Priority to US12/867,798 priority patent/US8212625B2/en
Publication of WO2009104839A1 publication Critical patent/WO2009104839A1/en

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03BGENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H03B5/1228Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device the amplifier comprising one or more field effect transistors
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03BGENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B27/00Generation of oscillations providing a plurality of outputs of the same frequency but differing in phase, other than merely two anti-phase outputs
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03BGENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H03B5/1206Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification
    • H03B5/1212Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification the amplifier comprising a pair of transistors, wherein an output terminal of each being connected to an input terminal of the other, e.g. a cross coupled pair
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03BGENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H03B5/1237Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator
    • H03B5/124Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the means comprising a voltage dependent capacitance
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03BGENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H03B5/1237Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator
    • H03B5/1293Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator having means for achieving a desired tuning characteristic, e.g. linearising the frequency characteristic across the tuning voltage range
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03BGENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H03B5/1296Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device the feedback circuit comprising a transformer

Definitions

  • the first and second variable capacitance units may have the same capacitance, and the third and fourth variable capacitance units may have the same capacitance which is different from that of the first and second variable capacitance units. That is, the first and second variable capacitance units and the third and fourth variable capacitance units may have a different frequency tuning range.
  • variable capacitance units for frequency variation are divided into variable capacitance units for coarse tuning and variable capacitance units for fine tuning. Therefore, it is possible to obtain a wide tuning range while a voltage os- dilation gain is reduced.
  • FIG. 3 is a circuit diagram for explaining a current reuse structure of the VCO shown in FIG. 2.
  • the first NMOS transistor NMl is connected between a third node N3 and a fifth node N5, and the second NMOS transistor NM2 is connected between a fourth node N4 and the fifth node N5.
  • the third variable capacitance unit CV3 is connected between the second control voltage VC2 and the third node N3, and the fourth variable capacitance unit CV4 is connected between the second control voltage VC2 and the fourth node N4.
  • a third NMOS transistor NM3 for supplying a bias current is connected between the fifth node N5 and a ground terminal GND.
  • the first PMOS transistor PMl and the second PMS transistor PM2 are differentially cross-coupled to the second NMOS transistor NM2 and the first NMOS transistor NMl, respectively. This will be specifically described as follows.
  • the first NMOS transistor NMl and the second NMOS transistor NM2 are cross-coupled to the second PMOS transistor PM2 and the first PMOS transistor PMl, respectively, through the transformer 231.
  • FIG. 3 is a circuit diagram for explaining the current reuse structure of the VCO shown in FIG. 2.
  • -g ac tive represents the sum of negative transconductances [(-gn)+(-gp)] when the first and second NMOS transistors NMl and NM2 and the first and second PMOS transistors PMl and PM2 are connected in series.
  • FIG. 4(a) is a circuit diagram showing a structure in which one or more resistors are connected between the first and second variable capacitance units CVl and CV2 and between the third and fourth variable capacitance units CV3 and CV4, such that the variable capacitance units shown in FIG. 2 operate linearly.
  • FIG. 4(b) is a diagram showing a variable capacitance range of the variable capacitance units shown in FIG. 4(a).

Abstract

Provided are a differential voltage-controlled oscillator (VCO) and a quadrature VCO using center-tapped cross-coupling of a transformer. The differential VCO and the quadrature VCO can be driven by low power through a current reuse structure and have an excellent phase noise characteristic by center-tapped cross-coupling through a transformer. Further, variable capacitance units for frequency variation are divided into variable capacitance units for coarse tuning and variable capacitance units for fine tuning. Therefore, it is possible to obtain a wide tuning range while voltage oscillation gain is reduced. Further, the differential VCO and the quadrature VCO are configured in such a manner that the respective variable capacitance units operate linearly throughout the entire capacitance region due to control voltage distribution by resistors. Accordingly, it is possible to obtain a linear control voltage-oscillation frequency characteristic. The quadrature VCO according to the present invention can output four-phase quadrature signals while having an excellent phase noise characteristic, without substrate loss and current consumption caused by the switching transistors.

Description

Description
THE DIFFERENTIAL VCO AND QUADRATURE VCO USING CENTER-TAPPED CROSS-COUPLING OF TRANSFORMER
Technical Field
[1] The present invention relates to a differential voltage-controlled oscillator (VCO) and a quadrature VCO using center-tapped cross-coupling of a transformer, and more specifically, a VCO which exhibits low-power and excellent phase noise characteristics by using center-tapped cross-coupling of a transformer, and has a wide oscillation frequency range and a linear control voltage-oscillation frequency characteristic.
[2] This work was supported by the IT R&D program of MIC/IITA [2006-S-070-02, Development of Cognitive Wireless Home Networking System]. Background Art
[3] In general, a VCO is an oscillator with a variable capacitor whose capacitance is changed through voltage adjustment, to thereby adjust the frequency. Such a VCO is an essential component of all electrical communication systems and may be used for up-converting or down-converting a frequency of a predetermined signal.
[4] FIG. 1 is a circuit diagram of a conventional LC VCO.
[5] Referring to FIG. 1, the conventional LC VCO 100 includes an LC resonant circuit
130 which oscillates at a frequency depending on a control voltage VC, and an amplification circuit 150 which amplifies the oscillation frequency output from the LC resonant circuit 130.
[6] In the conventional LC VCO 100 configured in such a manner, an NMOS transistor
NM and a PMOS transistor PM are connected in series to both ends of an inductor L so as to form one current path. Therefore, the VCO can oscillate while reducing current consumption by one half.
[7] In the LC VCO 100, however, since the NMOS transistor NM and the PMOS transistor PM are not exactly symmetrical with each other, an output is unbalanced. To solve this problem, a resistor Rs is connected to an output stage to equalize output levels. However, the magnitude of a supply voltage should be increased as much as a voltage drop caused by the resistor Rs.
[8] Meanwhile, when a quadrature VCO is implemented by connecting two such LC
VCOs through a switching transistor, the switching transistor is additionally connected to an oscillation load such that current consumption increases.
[9] Further, the switching transistor and a substrate are easily coupled to each other such that a parasitic component of the substrate is directly fed-back to the oscillation load. This degrades a phase noise characteristic. Disclosure of Invention
Technical Problem
[10] In order to solve the foregoing and/or other problems, it is an objective of the present invention to provide a VCO which exhibits low-power and excellent phase noise characteristics, and has a wide oscillation frequency range and a linear control voltage- oscillation frequency characteristic.
[11] It is another objective of the present invention to provide a quadrature VCO which has an excellent phase noise characteristic without substrate loss and current consumption caused by switching transistors. Technical Solution
[12] In one aspect, the present invention is directed to a differential voltage-controlled oscillator (VCO) using center-tapped cross-coupling of a transformer, the differential VCO comprising a resonant circuit including: a transformer having a primary coil connected between a first node and a third node, and a secondary coil connected between a second node and a fourth node; first and second variable capacitance units connected between a first control voltage and the first and second nodes, respectively; and third and fourth variable capacitance units connected between a second control voltage and the third and fourth nodes, respectively, wherein the resonant circuit oscillates a frequency depending on the first and second control voltages; a first amplification circuit including first and second PMOS transistors connected between a power supply and the first node and between the power supply and the second node, respectively, and differentially amplifying and outputting the oscillation frequency output from the resonant circuit; and a second amplification circuit including first and second NMOS transistors connected between the third node and a fifth node and between the fourth node and the fifth node, respectively, and differentially amplifying and outputting the oscillation frequency output from the resonant circuit.
[13] The first NMOS transistor and the second NMOS transistor are differentially cross- coupled to the second PMOS transistor and the first PMOS transistor, respectively, through the transformer.
[14] Here, center taps of the primary and secondary coils of the transformer may be connected to each other, and the first and second NMOS transistors and the first and second PMOS transistors may be connected in series through the center taps so as to form one current path.
[15] The first and second variable capacitance units may have the same capacitance, and the third and fourth variable capacitance units may have the same capacitance which is different from that of the first and second variable capacitance units. That is, the first and second variable capacitance units and the third and fourth variable capacitance units may have a different frequency tuning range.
[16] Therefore, either the pair of the first and second variable capacitance units or the pair of the third and fourth variable capacitance units may be used for coarse tuning while the other pair is used for fine tuning.
[17] Further, each of the first to fourth variable capacitance units may be composed of a plurality of varactor diodes, and one or more resistors for distributing the first and second control voltages may be connected between the first and second variable capacitance units and between the third and fourth variable capacitance units, respectively. Therefore, when the first control voltage is applied to the first and second variable capacitance units, the first control voltage may be distributed by the resistors such that the capacitance of the first and second variable capacitance units varies linearly throughout the entire capacitance region. When the second control voltage is applied to the third and fourth variable capacitance units, the second control voltage may be distributed by the resistors such that the capacitance of the third and fourth variable capacitance units varies linearly throughout the entire capacitance region.
[18] In another aspect, the present invention is directed to a quadrature VCO using center- tapped cross-coupling of a transformer, the quadrature VCO comprising first and second differential VCOs that are connected to each other through first to fourth switching transistors so as to output four-phase quadrature signals. The sources of the first and second switching transistors connected to the first differential VCO are connected to body gates of first and second NMOS transistors or body gates of first and second PMOS transistors composing an amplification circuit of the first differential VCO, respectively, and the sources of the third and fourth switching transistors connected to the second differential VCO are connected to body gates of first and second NMOS transistors or body gates of first and second PMOS transistors composing an amplification circuit of the second differential VCO, respectively.
Advantageous Effects
[19] First, the differential VCO and the quadrature VCO according to the present invention can be driven by low power through the current reuse structure.
[20] Second, the differential VCO and the quadrature VCO according to the present invention have an excellent phase noise characteristic by center-tapped cross-coupling through the transformer.
[21] Third, in the differential VCO and the quadrature VCO according to the present invention, the variable capacitance units for frequency variation are divided into variable capacitance units for coarse tuning and variable capacitance units for fine tuning. Therefore, it is possible to obtain a wide tuning range while a voltage os- dilation gain is reduced.
[22] Fourth, the differential VCO and the quadrature VCO according to the present invention are configured in such a manner that the respective variable capacitance units operate linearly throughout the entire capacitance region through the control voltage distribution of the resistors. Accordingly, it is possible to obtain a linear control voltage-oscillation frequency characteristic.
[23] Fifth, the quadrature VCO according to the present invention can output four-phase quadrature signals while having an excellent phase characteristic, without substrate loss and current consumption caused by the switching transistors. Brief Description of the Drawings
[24] The foregoing and other objects, features and advantages of the present invention will be apparent from the more particular description of preferred embodiments of the present invention, as illustrated in the accompanying drawings. The drawings are not necessarily to scale, emphasis instead being placed upon illustrating the principles of the present invention.
[25] FIG. 1 is a circuit diagram of a conventional LC VCO.
[26] FIG. 2 is a circuit diagram of a differential VCO according to the present invention.
[27] FIG. 3 is a circuit diagram for explaining a current reuse structure of the VCO shown in FIG. 2.
[28] FIG. 4(a) is a circuit diagram showing one or more resistors connected between first and second variable capacitance units and between third and fourth variable capacitance units, such that the variable capacitance units shown in FIG. 2 operate linearly.
[29] FIG. 4(b) is a diagram showing a variable capacitance range of the variable capacitance units shown in FIG. 4(a).
[30] FIG. 5 is a graph of results obtained by performing frequency tuning while adjusting the first and second control voltages in the VCO shown in FIG. 2.
[31] FIG. 6 is a graph of simulated differential output voltage with respect to input voltage in the VCO shown in FIG. 2.
[32] FIG. 7 is a circuit diagram of a quadrature VCO according to the present invention.
Mode for the Invention
[33] Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.
[34] FIG. 2 is a circuit diagram of a differential VCO according to the present invention.
[35] Referring to FIG. 2, the VCO 200 according to the present invention includes a resonant circuit 230 which oscillates a frequency depending on first and second control voltages VCl and VC2 and first and second amplification circuits 250A and 250B which differentially amplify the oscillation frequency output from the resonant circuit 230.
[36] The first amplification circuit 250A includes first and second PMOS transistors PMl and PM2, the second amplification circuit 250B includes first and second NMOS transistors NMl and NM2, and the resonant circuit 230 includes a transformer 231 and first to fourth variable capacitance units CVl and CV4 connected to the transformer 231.
[37] The connections among the components will be described in detail as follows.
[38] The first PMOS transistor PMl is connected between a power supply VDD and a first node Nl, and the second PMOS transistor PM2 is connected between the power supply VDD and a second node N2. The first variable capacitance unit CVl is connected between the first control voltage VCl and the first node Nl, and the second variable capacitance unit CV2 is connected between the first control voltage VCl and the second node N2.
[39] The first NMOS transistor NMl is connected between a third node N3 and a fifth node N5, and the second NMOS transistor NM2 is connected between a fourth node N4 and the fifth node N5. The third variable capacitance unit CV3 is connected between the second control voltage VC2 and the third node N3, and the fourth variable capacitance unit CV4 is connected between the second control voltage VC2 and the fourth node N4. Further, a third NMOS transistor NM3 for supplying a bias current is connected between the fifth node N5 and a ground terminal GND.
[40] The first PMOS transistor PMl and the second PMS transistor PM2 are differentially cross-coupled to the second NMOS transistor NM2 and the first NMOS transistor NMl, respectively. This will be specifically described as follows.
[41] The drain of the first NMOS transistor NMl is connected to the gate of the second
PMOS transistor PM2, and the drain of the second NMOS transistor NM2 is connected to the gate of the first PMOS transistor PMl. Further, the drain of the first PMOS transistor PMl is connected to the gate of the second NMOS transistor NM2, and the drain of the second PMOS transistor PM2 is connected to the gate of the first NMOS transistor NMl.
[42] That is, the first NMOS transistor NMl and the second NMOS transistor NM2 are cross-coupled to the second PMOS transistor PM2 and the first PMOS transistor PMl, respectively, through the transformer 231.
[43] Both ends of a primary coil 23 Ia of the transformer 231 are connected between the first node Nl and the third node N3, and both ends of a secondary coil 231b of the transformer 231 are connected between the second node N2 and the fourth node N4. Further, center taps 231c of the primary and secondary coils 231a and 231b of the transformer 231 are connected to each other. [44] The differential VCO 200 configured in such a manner has the following features: (1) a current reuse structure is adopted in the differential VCO 200 such that the differential VCO 200 can be driven by low power, (2) an excellent phase noise characteristic can be obtained by coupling through the transformer 231, (3) a wide-band tuning range can be obtained by the variable capacitance units CVl to CV4 which can perform coarse tuning and fine tuning, and (4) a control voltage-oscillation frequency characteristic is linear because a control voltage is distributed by resistors. These features will be described in detail as follows.
[45] First, the differential VCO 200 according to the present invention has the same current reuse structure as the conventional LC VCO shown in FIG. 1. Therefore, the differential VCO 200 can be driven by low power.
[46] Referring to FIG. 3, the current reuse structure will be described in more detail.
[47] FIG. 3 is a circuit diagram for explaining the current reuse structure of the VCO shown in FIG. 2. In FIG. 3, -gactive represents the sum of negative transconductances [(-gn)+(-gp)] when the first and second NMOS transistors NMl and NM2 and the first and second PMOS transistors PMl and PM2 are connected in series.
[48] As shown in FIG. 3, in the differential VCO according to the present invention, a first current path Pl directed to the secondary coil 231b through the center tap 231c from the primary coil 231a and a second current path P2 directed to the primary coil 231a through the center tap 231c from the secondary coil 231b are formed depending on the switching operations of the first and second NMOS transistor NMl and NM2 and the first and second PMOS transistors PMl and PM2.
[49] That is, the first and second NMOS transistors NM 1 and NM2 and the first and second PMOS transistors PMl and PM2 are connected in series so as to form one current path. In such a current reuse structure, current consumption can be reduced by one half during oscillation.
[50] Further, since the primary and second coils 23 Ia and 23 Ib of the transformer 231 are connected through the center tap 231c, UQ output levels can be equalized, even though the first and second NMOS transistors NMl and NM2 are not exactly symmetrical with the first and second PMOS transistors PMl and PM2. Further, AC signals of the first and second current paths Pl and P2 are coupled to each other such that a quality factor and a phase noise characteristic are enhanced.
[51] Second, the differential VCO 200 according to the present invention has a structure in which the first NMOS transistor NMl and the second NMOS transistor NM2 are cross-coupled to the second PMOS transistor PM2 and the first PMOS transistor PMl through the transformer 231. Accordingly, it is possible to obtain an excellent phase noise characteristic.
[52] More specifically, as shown in FIG. 2, the drains of the first PMOS transistor PMl and the first NMOS transistor NMl are connected to both ends of the primary coil 231a of the transformer 231, and the drains of the second PMOS transistor PM2 and the second NMOS transistor NM2 are connected to both ends of the secondary coil 231b. As a result, the gate and drain of the first NMOS transistor NMl are connected to the drain and gate of the second PMOS transistor PM2, respectively, and the gate and drain of the second NMOS transistor NM2 are connected to the drain and gate of the first PMOS transistor PMl, respectively, with the transformer 231 being set therebetween.
[53] The connection structure of the first and second NMOS transistors NMl and NM2 and the first and second PMOS transistors PMl and PM2 may have an effect upon voltage oscillation performance. In the present invention, as the first NMOS transistor NMl and the second NMOS transistor NM2 are cross-coupled to the second PMOS transistor PM2 and the first PMOS transistor PMl through the transformer 231, the connection structure enhances a phase noise characteristic.
[54] Third, the differential VCO 200 according to the present invention has a structure in which one pair of the first and second variable capacitance units CVl and CV2 and the other pair of the third and fourth variable capacitance units CV3 and CV4 performs coarse tuning while the other pair performs fine tuning. Accordingly, while a voltage oscillation gain is reduced, a wide-band tuning range can be obtained.
[55] More specifically, the first and second variable capacitance units CVl and CV2 have a different capacitance from the third and fourth variable capacitance units CV3 and CV4. Therefore, when the capacitance Cl of the first and second variable capacitance units CVl and CV2 is adjusted to perform coarse tuning and the capacitance C2 of the third and fourth variable capacitance units CV3 and CV4 is adjusted to perform fine tuning, it is possible to obtain a wide -band tuning range while a voltage oscillation gain is reduced.
[56] Here, it is preferable that the first and second variable capacitance units CVl and
CV2 have the same capacitance, and the third and fourth variable capacitance units CV3 and CV4 have the same capacitance. Further, as described above, one pair of the variable capacitance units is used for coarse tuning while the other pair of the variable capacitance units is used for fine tuning.
[57] Fourth, a control voltage-oscillation frequency characteristic of the differential VCO
200 according to the present invention is linear.
[58] In a typical VCO, a variable capacitance unit is composed of a varactor diode.
However, the varactor diode locally has a nonlinear characteristic in a variable capacitance region such that voltage oscillation gain is not constant.
[59] To solve this problem, one or more resistors are connected between the first and second variable capacitance units CVl and CV2 and between the third and fourth variable capacitance units CV3 and CV4 such that the nonlinear characteristic of the first to fourth variable capacitance units CVl to CV4 is linearized. This will be described in detail with reference to FIGS. 4(a) and 4(b).
[60] FIG. 4(a) is a circuit diagram showing a structure in which one or more resistors are connected between the first and second variable capacitance units CVl and CV2 and between the third and fourth variable capacitance units CV3 and CV4, such that the variable capacitance units shown in FIG. 2 operate linearly. FIG. 4(b) is a diagram showing a variable capacitance range of the variable capacitance units shown in FIG. 4(a).
[61] Referring to FIG. 4(a), each of the first to fourth variable capacitance units CVl to
CV4 is composed of three-staged varactor diodes CO which are each connected to a resistor R.
[62] In the respective varactor diodes CO, a change in capacitance with respect to a control voltage VC of 0~ Vc is nonlinear. However, when the resistors R are connected to the respective varactor diodes CO as shown in FIG. 4(a) and a control voltage Vc is applied, the control voltage Vc is distributed across the resistors R.
[63] Accordingly, as shown in FIG. 4(b), a capacitance range which is varied in each of the varactor diodes CO differs. The capacitance range which is finally varied is (Ca+Cb)~(Ca+Cb+Cc). Therefore, since the capacitance which is actually varied is Cc, it can be found that the overall change in capacitance is linear.
[64] That is, the capacitance change of the first to fourth variable capacitance units CVl to CV4 is linearized by the control voltage distribution through the resistors. Accordingly, it is possible to obtain a linear control voltage-oscillation frequency characteristic.
[65] In this embodiment, the variable capacitance range is divided into three parts by using three-staged varactor diodes. However, the variable capacitance range can be further divided by using a larger number of varactor diodes. In this case, as the variable capacitance range is further divided, the entire variable capacitance range may decrease, so that a frequency tuning range is likely to decrease. Therefore, it is preferable that the variable capacitance range is divided only to such a degree that the frequency tuning range does not decrease.
[66] FIG. 5 is a graph of results obtained by performing frequency tuning while adjusting the first and second control voltages CVl and CV2 in the VCO shown in FIG. 2.
[67] As shown in FIG. 5, when the second control voltage VC2 of the third and fourth variable capacitance units CV3 and CV4 was controlled to perform fine tuning while the first control voltage VCl of the first and second variable capacitance units CVl and CV2 for coarse tuning was varied in 0.2V steps, the differential VCO had a wideband characteristic where the oscillation frequency range was more than 1.5 GHz. [68] FIG. 6 is a graph showing a simulation result of output voltages at four output nodes
Nl to N4 in the differential VCO shown in FIG. 2.
[69] Referring to FIG. 6, it can be found that first differential output voltages +Vo1 and -V oi output from the amplification circuit 250B have a different amplitude from second differential output voltages +V02 and -V02 output from the amplification circuit 250A. Such a difference in amplitude is caused by a difference in capacitance between the variable capacitance units connected to the respective output terminals. As the capacitance of a variable capacitance unit connected to an output terminal increases, the amplitude of an output voltage increases. As the capacitance decreases, the amplitude of an output voltage decreases.
[70] Further, it can be found that the first negative differential output voltage -VOi has a different phase from the second negative differential output voltage -V02, and the first positive differential output voltage +Vo1 has a different phase from the second positive differential output voltage +V02- Such a phase difference is caused by coupling through the transformer 231. That is, the phase difference can be adjusted through coupling by the transformer 231.
[71] Therefore, between the first differential output voltages +Vθi and -VOi and the second differential output voltages +V02 and -V02 output from the differential VCO, any one pair of output voltages having a desirable magnitude and phase may be selected.
[72] Meanwhile, when two VCOs are connected through switching transistors so as to implement a quadrature VCO, current consumption may increase due to the switching transistors, and substrate loss (phase noise) may occur.
[73] To solve this problem, a quadrature VCO is configured which can output a quadrature signal without substrate loss and current consumption caused by switching transistors. This will be described in more detail with reference to FIG. 7.
[74] FIG. 7 is a circuit diagram of a quadrature VCO according to the present invention.
[75] Referring to FIG. 7, the quadrature VCO according to the present invention has a structure in which first and second VCOs 200a and 200b are connected through first to fourth switching transistors M81 to M84. The first and second VCOs 200a and 200b have the same configuration as the VCO shown in FIG. 2.
[76] In the first VCO 200a, the sources of the first and second switching transistors M81 and M82 are connected to body gates of first and second NMOS transistors NMl and NM2, respectively. Similarly, in the second VCO 200b, the sources of the third and fourth switching transistors M83 and M84 are connected to body gates of fifth and sixth NMOS transistors NM5 and NM6, respectively.
[77] In such a connection structure, a current does not flow in the first to fourth switching transistors M81 to M84, which makes it possible to reduce current consumption. Further, since the first to fourth switching transistors M81 to M84 are not coupled to a substrate, it is possible to obtain four-phase quadrature signals without phase noise caused by a parasitic component of the substrate.
[78] In this embodiment, the quadrature VCO using coupling of the transformer 231 has been taken as an example. However, the connection structure of the switching transistors can also be applied to the conventional quadrature VCO using an inductor.
[79] Exemplary embodiments of the present invention have been disclosed herein and, although specific terms are employed, they are used and are to be interpreted in a generic and descriptive sense only and not for purposes of limitation. Accordingly, it will be understood by those of ordinary skill in the art that various changes in form and details may be made without departing from the spirit and scope of the present invention as set forth in the following claims.

Claims

Claims
[1] A differential voltage-controlled oscillator (VCO) using center-tapped cross- coupling of a transformer, comprising: a resonant circuit including: a transformer having a primary coil connected between a first node and a third node, and a secondary coil connected between a second node and a fourth node; first and second variable capacitance units connected between a first control voltage and the first and second nodes, respectively; and third and fourth variable capacitance units connected between a second control voltage and the third and fourth nodes, respectively, wherein the resonant circuit oscillates a frequency depending on the first and second control voltages; a first amplification circuit including first and second PMOS transistors connected between a power supply and the first node and between the power supply and the second node, respectively, and differentially amplifying and outputting the oscillation frequency output from the resonant circuit; and a second amplification circuit including first and second NMOS transistors connected between the third node and a fifth node and between the fourth node and the fifth node, respectively, and differentially amplifying and outputting the oscillation frequency output from the resonant circuit, wherein the first NMOS transistor and the second NMOS transistor are differentially cross-coupled to the second PMOS transistor and the first PMOS transistor, respectively, through the transformer.
[2] The differential VCO according to claim 1, wherein the gate and drain of the first
NMOS transistor are connected to the drain and gate of the second PMOS transistor, respectively.
[3] The differential VCO according to claim 1, wherein the gate and drain of the second NMOS transistor are connected to the drain and gate of the first PMOS transistor, respectively.
[4] The differential VCO according to claim 1, wherein center taps of the primary and secondary coils of the transformer are connected to each other.
[5] The differential VCO according to claim 4, wherein the first and second NMOS transistors and the first and second PMOS transistors are connected in series through the center taps so as to form one current path.
[6] The differential VCO according to claim 1, wherein the amplitudes and phases of differential output voltages output from the first and second nodes are the same, and the amplitudes and phases of differential output voltages output from the third and fourth nodes are the same.
[7] The differential VCO according to claim 1, wherein the phases of differential output voltages output from the first and second nodes and the phases of differential output voltages output from the third and fourth nodes are adjusted by coupling adjustment of the transformer.
[8] The differential VCO according to claim 1, wherein the first and second variable capacitance units have the same capacitance, and the third and fourth variable capacitance units have the same capacitance which is different from that of the first and second variable capacitance units.
[9] The differential VCO according to claim 1, wherein the first and second variable capacitance units have a different frequency tuning range from the third and fourth variable capacitance units, such that the first and second variable capacitance units are used for coarse tuning and the third and fourth variable capacitance units are used for fine tuning.
[10] The differential VCO according to claim 1, wherein the first and second variable capacitance units have a different frequency tuning range from the third and fourth variable capacitance units, such that the first and second variable capacitance units are used for fine tuning and the third and fourth variable capacitance units are used for coarse tuning.
[11] The differential VCO according to claim 1, wherein each of the first to fourth variable capacitance units is composed of a plurality of varactor diodes, and one or more resistors for distributing the first and second control voltages are connected between the first and second variable capacitance units and between the third and fourth variable capacitance units, respectively.
[12] The differential VCO according to claim 11, wherein when the first control voltage is applied to the first and second variable capacitance units, the first control voltage is distributed by the resistors such that the capacitance of the first and second variable capacitance units varies linearly throughout the entire capacitance region, and when the second control voltage is applied to the third and fourth variable capacitance units, the second control voltage is distributed by the resistors such that the capacitance of the third and fourth variable capacitance units varies linearly throughout the entire capacitance region.
[13] The differential VCO according to claim 1, wherein a third NMOS transistor for supplying a bias current is connected between the fifth node and a ground terminal.
[14] A quadrature VCO using center- tapped cross-coupling of a transformer, comprising: first and second differential VCOs that are connected to each other through first to fourth switching transistors so as to output four-phase quadrature signals, wherein the sources of the first and second switching transistors connected to the first differential VCO are connected to body gates of first and second NMOS transistors or body gates of first and second PMOS transistors composing an amplification circuit of the first differential VCO, respectively, and the sources of the third and fourth switching transistors connected to the second differential VCO are connected to body gates of first and second NMOS transistors or body gates of first and second PMOS transistors composing an amplification circuit of the second differential VCO, respectively.
[15] The quadrature VCO according to claim 14, wherein each of the first and second differential VCOs comprises: a resonant circuit including: a transformer having a primary coil connected between a first node and a third node, and a secondary coil connected between a second node and a fourth node; first and second variable capacitance units connected between a first control voltage and the first and second nodes, respectively; and third and fourth variable capacitance units connected between a second control voltage and the third and fourth nodes, respectively, wherein the resonant circuit oscillates a frequency depending on the first and second control voltages; a first amplification circuit including first and second PMOS transistors connected between a power supply and the first node and between the power supply and the second node, respectively, and differentially amplifying and outputting the oscillation frequency output from the resonant circuit; and a second amplification circuit including first and second NMOS transistors connected between the third node and a fifth node and between the fourth node and the fifth node, respectively, and differentially amplifying and outputting the oscillation frequency output from the resonant circuit, wherein the first NMOS transistor and the second NMOS transistor are differentially cross-coupled to the second PMOS transistor and the first PMOS transistor, respectively, through the transformer.
PCT/KR2008/003331 2008-02-21 2008-06-13 The differential vco and quadrature vco using center-tapped cross-coupling of transformer WO2009104839A1 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2010541380A JP5087680B2 (en) 2008-02-21 2008-06-13 Differential voltage controlled oscillator and quadrature voltage controlled oscillator using transformer coupling
US12/867,798 US8212625B2 (en) 2008-02-21 2008-06-13 Differential VCO and quadrature VCO using center-tapped cross-coupling of transformer

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR10-2008-0015749 2008-02-21
KR20080015749 2008-02-21
KR1020080043936A KR100952424B1 (en) 2008-02-21 2008-05-13 The Differential VCO and quadrature VCO using center-tapped cross-coupling of transformer
KR10-2008-0043936 2008-05-13

Publications (1)

Publication Number Publication Date
WO2009104839A1 true WO2009104839A1 (en) 2009-08-27

Family

ID=40985696

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2008/003331 WO2009104839A1 (en) 2008-02-21 2008-06-13 The differential vco and quadrature vco using center-tapped cross-coupling of transformer

Country Status (1)

Country Link
WO (1) WO2009104839A1 (en)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011031389A3 (en) * 2009-09-10 2011-05-19 Intel Corporation A low phase noise voltage controlled oscillator
US20110148535A1 (en) * 2009-12-21 2011-06-23 Electronics And Telecommunications Research Institute Voltage controlled oscillator
CN102195592A (en) * 2010-03-17 2011-09-21 精工爱普生株式会社 Circuit device, electronic apparatus and power supply circuit
US9819307B2 (en) 2015-06-19 2017-11-14 Qualcomm Incorporated Low power current re-using transformer-based dual-band voltage controlled oscillator
US9900060B1 (en) * 2015-05-12 2018-02-20 Superlative Semiconductor, LLC Tunable microwave network and application to transmit leakage cancellation circuit in an RFID interrogator
CN108631730A (en) * 2017-03-16 2018-10-09 英飞凌科技股份有限公司 System and method for double-core VCO
CN110719070A (en) * 2019-09-29 2020-01-21 天津大学 Low-power consumption voltage-controlled oscillator based on dynamic threshold technology
CN111342775A (en) * 2018-12-19 2020-06-26 天津大学青岛海洋技术研究院 Dual-core oscillator based on current multiplexing and transformer coupling buffer amplifier
CN111641391A (en) * 2020-05-09 2020-09-08 上海华虹宏力半导体制造有限公司 Differential quadrature output low noise amplifier
US10972150B2 (en) 2017-12-04 2021-04-06 Superlative Semiconductor, LLC Low-cost software-defined RFID interrogator with active transmit leakage cancellation
CN115037283A (en) * 2022-08-12 2022-09-09 山东华翼微电子技术股份有限公司 High-speed phase jitter physical random source circuit and working method thereof

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5912596A (en) * 1998-01-26 1999-06-15 International Business Machines Corporation Apparatus and method for frequency tuning an LC oscillator in a integrated clock circuit
US6121850A (en) * 1998-08-19 2000-09-19 International Business Machines Corporation Digitally adjustable inductive element adaptable to frequency tune an LC oscillator
US6456167B1 (en) * 2000-07-13 2002-09-24 Industrial Technology Research Institute Quadrature oscillator
US6621363B2 (en) * 2001-11-20 2003-09-16 Samsung Electronics Co., Ltd. Differential type voltage controlled oscillator
KR20050034345A (en) * 2003-10-09 2005-04-14 한국과학기술원 Quadrature voltage controled push-push oscillator with transformer based lc-resonators and pinch-off clipping

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5912596A (en) * 1998-01-26 1999-06-15 International Business Machines Corporation Apparatus and method for frequency tuning an LC oscillator in a integrated clock circuit
US6121850A (en) * 1998-08-19 2000-09-19 International Business Machines Corporation Digitally adjustable inductive element adaptable to frequency tune an LC oscillator
US6456167B1 (en) * 2000-07-13 2002-09-24 Industrial Technology Research Institute Quadrature oscillator
US6621363B2 (en) * 2001-11-20 2003-09-16 Samsung Electronics Co., Ltd. Differential type voltage controlled oscillator
KR20050034345A (en) * 2003-10-09 2005-04-14 한국과학기술원 Quadrature voltage controled push-push oscillator with transformer based lc-resonators and pinch-off clipping

Cited By (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7961056B2 (en) 2009-09-10 2011-06-14 Intel Corporation Low phase noise voltage controlled oscillator
WO2011031389A3 (en) * 2009-09-10 2011-05-19 Intel Corporation A low phase noise voltage controlled oscillator
US20110148535A1 (en) * 2009-12-21 2011-06-23 Electronics And Telecommunications Research Institute Voltage controlled oscillator
US8436689B2 (en) * 2009-12-21 2013-05-07 Electronics And Telecommunications Research Institute Multiple phase voltage controlled oscillator including a resonant circuit and negative resistance circuit
CN102195592A (en) * 2010-03-17 2011-09-21 精工爱普生株式会社 Circuit device, electronic apparatus and power supply circuit
JP2011199385A (en) * 2010-03-17 2011-10-06 Seiko Epson Corp Circuit device, electronic equipment, and power supply circuit
US10187120B1 (en) 2015-05-12 2019-01-22 Superlative Semiconductor, LLC Tunable microwave network and application to transmit leakage cancellation circuit in an RFID interrogator
US9900060B1 (en) * 2015-05-12 2018-02-20 Superlative Semiconductor, LLC Tunable microwave network and application to transmit leakage cancellation circuit in an RFID interrogator
US9819307B2 (en) 2015-06-19 2017-11-14 Qualcomm Incorporated Low power current re-using transformer-based dual-band voltage controlled oscillator
CN108631730A (en) * 2017-03-16 2018-10-09 英飞凌科技股份有限公司 System and method for double-core VCO
CN108631730B (en) * 2017-03-16 2022-04-15 英飞凌科技股份有限公司 System and method for dual core VCO
US10972150B2 (en) 2017-12-04 2021-04-06 Superlative Semiconductor, LLC Low-cost software-defined RFID interrogator with active transmit leakage cancellation
CN111342775A (en) * 2018-12-19 2020-06-26 天津大学青岛海洋技术研究院 Dual-core oscillator based on current multiplexing and transformer coupling buffer amplifier
CN111342775B (en) * 2018-12-19 2023-07-14 天津大学青岛海洋技术研究院 Dual-core oscillator based on current multiplexing and transformer coupling buffer amplifier
CN110719070A (en) * 2019-09-29 2020-01-21 天津大学 Low-power consumption voltage-controlled oscillator based on dynamic threshold technology
CN110719070B (en) * 2019-09-29 2023-05-12 天津大学 Low-power consumption voltage-controlled oscillator based on dynamic threshold technology
CN111641391A (en) * 2020-05-09 2020-09-08 上海华虹宏力半导体制造有限公司 Differential quadrature output low noise amplifier
CN115037283A (en) * 2022-08-12 2022-09-09 山东华翼微电子技术股份有限公司 High-speed phase jitter physical random source circuit and working method thereof
CN115037283B (en) * 2022-08-12 2022-10-21 山东华翼微电子技术股份有限公司 High-speed phase jitter physical random source circuit and working method thereof

Similar Documents

Publication Publication Date Title
US8212625B2 (en) Differential VCO and quadrature VCO using center-tapped cross-coupling of transformer
WO2009104839A1 (en) The differential vco and quadrature vco using center-tapped cross-coupling of transformer
US7375596B2 (en) Quadrature voltage controlled oscillator
JP6072120B2 (en) Transformer-based CMOS oscillator
US7209017B2 (en) Symmetrical linear voltage controlled oscillator
US6995626B2 (en) Tunable capacitive component, and LC oscillator with the component
US9425735B2 (en) Voltage-controlled oscillator
US20120001699A1 (en) System and method for extending vco output voltage swing
US20080012654A1 (en) Linearized variable-capacitance module and lc resonance circuit using the same
US9379663B1 (en) LC oscillator circuit with wide tuning range
US7675374B2 (en) Voltage controlled oscillator with switching bias
JP2009284329A (en) Semiconductor integrated circuit device
US20110018646A1 (en) Lc voltage-controlled oscillator
US9252705B2 (en) Oscillator having dual topology
US20050046494A1 (en) Low power quadrature voltage controlled oscillator using back gate
US8717112B2 (en) Inductance-capacitance (LC) oscillator
US9559702B1 (en) Circuits and methods for flicker noise upconversion minimization in an oscillator
US20090128245A1 (en) Oscillator Circuit
Kampe et al. An LC-VCO with one octave tuning range
US11750199B2 (en) Quadrature oscillator circuitry and circuitry comprising the same
US10432141B2 (en) Multimode voltage controlled oscillator
Wang et al. A 0.18 μm 1V 5GHz LC VCO designed for WSN applications
CN110868158B (en) Miniaturized radio frequency oscillator with wide linear frequency modulation range
WO2007036849A1 (en) Varactor-less oscillator with enhanced tuning capability
KR100884114B1 (en) Quadrature voltage controlled oscillator with low power and low phase noise

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 08766293

Country of ref document: EP

Kind code of ref document: A1

WWE Wipo information: entry into national phase

Ref document number: 2010541380

Country of ref document: JP

WWE Wipo information: entry into national phase

Ref document number: 12867798

Country of ref document: US

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 08766293

Country of ref document: EP

Kind code of ref document: A1