CN111342775B - Dual-core oscillator based on current multiplexing and transformer coupling buffer amplifier - Google Patents

Dual-core oscillator based on current multiplexing and transformer coupling buffer amplifier Download PDF

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CN111342775B
CN111342775B CN201811557862.9A CN201811557862A CN111342775B CN 111342775 B CN111342775 B CN 111342775B CN 201811557862 A CN201811557862 A CN 201811557862A CN 111342775 B CN111342775 B CN 111342775B
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transformer
core
transistor
transistors
buffer amplifier
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CN111342775A (en
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李英男
马建国
郑玉学
周绍华
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Tianjin University Marine Technology Research Institute
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    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03BGENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H03B5/1228Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device the amplifier comprising one or more field effect transistors
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03BGENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B2200/00Indexing scheme relating to details of oscillators covered by H03B
    • H03B2200/006Functional aspects of oscillators
    • H03B2200/0062Bias and operating point
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03BGENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B2200/00Indexing scheme relating to details of oscillators covered by H03B
    • H03B2200/006Functional aspects of oscillators
    • H03B2200/0082Lowering the supply voltage and saving power
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03BGENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B2200/00Indexing scheme relating to details of oscillators covered by H03B
    • H03B2200/006Functional aspects of oscillators
    • H03B2200/0088Reduction of noise
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02DCLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
    • Y02D30/00Reducing energy consumption in communication networks
    • Y02D30/70Reducing energy consumption in communication networks in wireless communication networks

Abstract

The dual-core oscillator based on the current multiplexing and transformer coupling buffer amplifier consists of two cross coupling oscillator cores 1 and 2 with the same structure and an output buffer amplifier, wherein the cross coupling oscillator cores 1 and 2 are positioned at the bottom of the voltage-controlled oscillator, and the output buffer amplifier is positioned at the top; the three parts are coupled by a three-coil strong coupling transformer T. By adopting a current multiplexing technology and a dual-core structure, the two VCO oscillation cores and the buffer amplifier are coupled through the three-coil strong coupling transformer, so that the output power of the voltage-controlled oscillator is greatly increased, and meanwhile, the phase noise of the oscillator is reduced.

Description

Dual-core oscillator based on current multiplexing and transformer coupling buffer amplifier
Technical Field
The invention relates to the field of radio frequency integrated circuits, in particular to a dual-core oscillator with high output power and low phase noise based on a current multiplexing and transformer coupling buffer amplifier.
Background
Implementing a fully integrated low power, low phase noise voltage controlled oscillator (Voltage controlled oscillator, VCO) is one of the important challenges faced by rf front end module design. In recent years, doppler radar systems have been applied to wireless sensors such as position and distance sensing, car collision avoidance radar, heart beat monitoring and detection. In order for radar to operate for long periods of time on battery power, a high efficiency circuit is critical. In the last decades, many approaches to reduce the power consumption of oscillators have been proposed, with low voltage operation being one of the most promising solutions. However, the reduction of the operating voltage limits the amplitude of the signal, resulting in deterioration of VCO phase noise. This will severely degrade the performance of the receiver.
In general, VCOs are used in radio frequency transceiversThe up/down converter mixer is driven. There are many design parameters that need to be considered, such as tuning range, phase noise, output power and efficiency. High frequency oscillators can be implemented in SiGe processes because they have superior power handling and higher f T And f max [1]. However, such a process is not easily integrated with standard CMOS circuitry. Document [2 ]]In (2) by using a switching inductance, three commonly used source amplifiers are required to increase the output power. It will therefore require more dc power. [3]-[5]Drain-source transformer feedback VCO is reported. The method can obtain larger voltage fluctuation under low power supply voltage. However, the parasitic capacitance of the transformer limits the tuning range.
To address this challenge, some researchers have combined standard CMOS processes with non-conventional processes, such as thick metallization inductors or external high Q inductors [6 ]]. The oscillation condition of the oscillator is gm x R TANK 1, where gm is the transconductance of the oscillator, R TANK Is the equivalent resistance of the capacitive-inductive resonant cavity when resonating. If a high Q capacitance-inductance resonant cavity is used, R TANK The minimum gm value required for oscillation is increased and therewith the leakage current requirement is reduced. Since the phase noise of an oscillator is inversely proportional to the quality factor of its resonant cavity, not only low power consumption can be obtained, but also low phase noise characteristics can be caused. However, high Q passive components cannot be easily integrated onto CMOS platforms, so this approach does not meet the market demands for miniaturized, low cost, low power consumption communication devices.
[ reference ] to
[1] N. Mahalingam, K. Ma,K. S. Yeo, and W. M. Lim, “K -band high-PAE wide-tuning-range VCO using triple-coupled LC tanks,” IEEE Trans. Circuits Syst. II, Exp. Briefs, vol.60, no. 11, pp. 736–740, Nov. 2013.
[2] J. Zhang, N. Sharma,and K. K. O, “21.5-to-33.4 GHz voltage-controlled oscillator using NMOS switched inductors in CMOS,” IEEE Microw. Wireless Compon. Lett., vol. 24,no. 7, pp. 478–480, Jul. 2014.
[3] C.-A. Lin, J.-L. Kuo,K.-Y. Lin, and H. Wang, “A 24 GHz low power VCO with transformer feedback,” in Proc. IEEE Radio Freq. Integr. Circuits Symp., Jun. 2009, pp. 75–78. [4]S. L. Liu, X. C. Tian, Y. Hao, and A. Chin, “A bias-varied low-powerK-band VCO in 90 nm CMOS technology,” IEEE Microw. Wireless Compon. Lett., vol. 22, no. 6, pp. 321–323, Jun. 2012. [5]J. Yang, C.-Y. Kim, D.-W. Kim, and S. Hong, “Design of a 24-GHz CMOSVCO with an asymmetric-width transformer,” IEEE Trans. Circuits Syst. II, Exp. Briefs, vol. 57, no. 3, pp. 173–177, Mar. 2010.
[6] B. P. Otis and J. M.Rabaey, “A 300 W 1.9-GHz CMOS oscillator utilizing micromachined resonators,” IEEE J. Solid-State Circuits, vol. 38, no. 7, pp. 1271–1274, Jul.2003。
Disclosure of Invention
In order to solve the problems of low output power and high phase noise of the millimeter wave voltage-controlled oscillator, the invention provides a dual-core oscillator based on current multiplexing and a transformer coupling buffer amplifier. By adopting a current multiplexing technology and a dual-core structure, the two VCO oscillation cores and the buffer amplifier are coupled through the three-coil strong coupling transformer, so that the output power of the voltage-controlled oscillator is greatly increased, and meanwhile, the phase noise of the oscillator is reduced.
The voltage-controlled oscillator comprises two cross-coupled oscillator cores 1 and 2 with the same structure and an output buffer amplifier, wherein the cross-coupled oscillator cores 1 and 2 are positioned at the bottom of the voltage-controlled oscillator, and the output buffer amplifier is positioned at the top; the three parts are coupled by a three-coil strong coupling transformer T.
The core 1 comprises varactors Cv1, cv2, transistors M1 and M2 and a secondary winding L2 of the transformer T; the grid electrode of the transistor M1 is connected with the drain electrode of the transistor M2, and the grid electrode of the transistor M2 is connected with the drain electrode of the transistor M1 to form a cross-coupled core transistor pair generating negative resistance; the sources of the transistors M1, M2 are grounded, respectively. The positive ends of the varactors Cv1 and Cv2 are in back-to-back butt joint, and the negative ends of the two varactors Cv1 and Cv2 are connected with the secondary coil L2 of the transformer T so that the two varactors Cv1 and Cv2 and the secondary coil L2 of the transformer T are connected in parallel to form a resonant cavity of the core 1.
The core 2 comprises varactors Cv3, cv4, transistors M3 and M4 and a tertiary winding L3 of a transformer T. The grid electrode of the transistor M3 is connected with the drain electrode of the transistor M4, and the grid electrode of the transistor M4 is connected with the drain electrode of the transistor M3 to form a cross-coupled core transistor pair generating negative resistance; sources of the transistors M3 and M4 are grounded respectively; the positive ends of the varactors Cv3 and Cv4 are in back-to-back butt joint, and the negative ends of the two varactors Cv3 and Cv4 are connected with the three-stage coil L3 of the transformer T so that the two varactors Cv3 and Cv4 are connected with the three-stage coil L3 of the transformer T in parallel to form a resonant cavity of the core 2.
The output buffer amplifier comprises inductors L4 and L5, transistors M5 and M6 and a primary coil L1 of a transformer T; the drains of the transistors M5 and M6 are connected with a power supply VDD through inductors L4 and L5 respectively; the sources of the transistors M5 and M6 are connected to the center taps of the secondary coil transformer and the tertiary coil transformer of the VCO at the X point, thereby realizing the reutilization of direct current, reducing the power consumption of the system and achieving the purpose of high efficiency; the gates of the transistors M5, M6 are connected to the bias voltage Vb via the center tap of the primary winding L1.
Further, the drains of transistors M5 and M6 output a set of differential signals Vn and Vp, respectively.
Further, tuning voltage V is connected among varactors Cv1, cv2, cv3 and Cv4 T Frequency tuning is performed.
Based on the technical scheme, the dual-core oscillator based on the current multiplexing and transformer coupling buffer amplifier has the following innovation and beneficial effects:
1. the cross-coupled pair and buffer amplifier are integrated with a center tapped transformer using current multiplexing techniques. Conventional designs have a buffer amplifier connected directly after the VCO to increase power, however, this approach does not give good overall efficiency. The method has the advantages that the bias (Vb) of the buffer amplifier can be set directly through the center tap of the primary coil of the transformer, so the bias of the buffer amplifier can not depend on the work of the voltage-controlled oscillatorAnd (3) the situation. Simulation shows that the peak output power of VCO can reach more than 4dBm (as shown in figure 1), the power consumption is 8.4mW, and the method is as follows
Figure SMS_1
The peak efficiency can reach about 30% by calculation.
2. The dual-core structure is adopted to improve the phase noise performance. From the perspective of the overall architecture of the oscillator, a dual-core structure (i.e. coupling two topological cores of the oscillator) is adopted, and each oscillator core has a local resonant cavity, so that the high resonant current of each capacitive inductance resonant cavity only locally flows. In this case, the capacitance parallel capacitance is doubled, the inductance parallel inductance is halved, the oscillation frequency is kept unchanged but the equivalent resistance of the parallel resonant cavity is halved, and the phase noise is reduced by 3dB in theory. The combination of the two methods can greatly break through the design bottleneck that the output power and the phase noise of the existing microwave radio frequency voltage-controlled oscillator are mutually limited.
Drawings
FIG. 1 is a graph of simulation results of output power at different frequencies;
fig. 2 is a schematic diagram of a dual-core oscillator architecture based on current multiplexing and transformer coupling.
Detailed Description
The present invention will be further described in detail below with reference to specific examples and with reference to the accompanying drawings, in order to make the objects, technical solutions and advantages of the present invention more apparent. Other figures may be made by those of ordinary skill in the art without undue burden from the drawings.
As shown in fig. 2, the voltage-controlled oscillator in the invention is composed of two cross-coupled oscillator cores 1 and 2 with the same structure and an output buffer amplifier, wherein the cross-coupled oscillator cores 1 and 2 are positioned at the bottom of the voltage-controlled oscillator, and the output buffer amplifier is positioned at the top; the three parts are coupled by a three-coil strong coupling transformer T.
The core 1 comprises varactors Cv1, cv2, transistors M1 and M2 and a secondary winding L2 of the transformer T. The drains of the transistors M1 and M2 are respectively connected with two ends of the secondary coil L2 of the transformer. The gate of the transistor M1 is connected to the drain of the transistor M2, and the gate of the transistor M2 is connected to the drain of the transistor M1, thereby forming cross coupling. Positive electrodes of the varactors Cv1 and Cv2 are connected, and negative electrodes of the varactors are connected with drains of the transistors M1 and M2 respectively.
The core 2 comprises varactors Cv3, cv4, transistors M3 and M4 and a tertiary winding L3 of a transformer T. The drains of the transistors M3 and M4 are respectively connected with two ends of the three-stage coil L3 of the transformer. The gate of the transistor M3 is connected to the drain of the transistor M4, and the gate of the transistor M4 is connected to the drain of the transistor M3, thereby forming cross coupling. Positive poles of the varactors Cv3 and Cv4 are connected, and negative poles of the varactors are respectively connected with drains of the transistors M3 and M4.
The buffer amplifier comprises transistors M5 and M6, inductances L4, L5. The gates of the buffer amplifier transistors M5 and M6 are connected to both ends of the primary winding L1 of the transformer, respectively, and the sources are connected to center taps of the secondary winding L2 and the tertiary winding L3 of the transformer.

Claims (3)

1. A dual-core oscillator based on current multiplexing and transformer coupling buffer amplifier, characterized in that:
the cross-coupled oscillator comprises two cross-coupled oscillator cores 1 and 2 with the same structure and an output buffer amplifier, wherein the cross-coupled oscillator cores 1 and 2 are positioned at the bottom of the voltage-controlled oscillator, and the output buffer amplifier is positioned at the top; three parts are coupled through a three-coil strong coupling transformer T;
the core 1 comprises varactors Cv1, cv2, transistors M1 and M2 and a secondary winding L2 of the transformer T; the grid electrode of the transistor M1 is connected with the drain electrode of the transistor M2, and the grid electrode of the transistor M2 is connected with the drain electrode of the transistor M1 to form a cross-coupled core transistor pair generating negative resistance; sources of the transistors M1 and M2 are respectively grounded; the positive ends of the varactors Cv1 and Cv2 are in back-to-back butt joint, and the negative ends of the two varactors Cv1 and Cv2 are connected with the secondary coil L2 of the transformer T so that the two varactors Cv1 and Cv2 and the secondary coil L2 of the transformer T are connected in parallel to form a resonant cavity of the core 1;
the core 2 comprises varactors Cv3, cv4, transistors M3 and M4 and a tertiary winding L3 of a transformer T; the grid electrode of the transistor M3 is connected with the drain electrode of the transistor M4, and the grid electrode of the transistor M4 is connected with the drain electrode of the transistor M3 to form a cross-coupled core transistor pair generating negative resistance; sources of the transistors M3 and M4 are grounded respectively; the positive ends of the varactors Cv3 and Cv4 are in back-to-back butt joint, and the negative ends of the two varactors Cv3 and Cv4 are connected with the three-stage coil L3 of the transformer T so that the two varactors Cv3 and Cv4 are connected with the three-stage coil L3 of the transformer T in parallel to form a resonant cavity of the core 2;
the output buffer amplifier comprises inductors L4 and L5, transistors M5 and M6 and a primary coil L1 of a transformer T; the drains of the transistors M5 and M6 are connected with a power supply VDD through inductors L4 and L5 respectively; the sources of the transistors M5 and M6 are respectively connected to the center taps of the secondary coil L2 and the tertiary coil L3 of the transformer T at the X point, so that the reutilization of direct current is realized, the power consumption of the system is reduced, and the aim of high efficiency is fulfilled; the gates of the transistors M5, M6 are connected to the bias voltage Vb via the center tap of the primary winding L1.
2. A dual-core oscillator based on current multiplexing and transformer coupled buffer amplifier according to claim 1, wherein: the drains of transistors M5, M6 output a set of differential signals Vn and Vp, respectively.
3. A dual-core oscillator based on current multiplexing and transformer coupled buffer amplifier according to claim 1, wherein: the tuning voltage VT is connected between the varactors Cv1, cv2 and Cv3, cv4, and frequency tuning is performed.
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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200934098A (en) * 2008-01-17 2009-08-01 Univ Nat Taiwan Transistor voltage-controlled oscillator
WO2009104839A1 (en) * 2008-02-21 2009-08-27 Electronics And Telecommunications Research Institute The differential vco and quadrature vco using center-tapped cross-coupling of transformer
CN103023460A (en) * 2012-11-28 2013-04-03 上海高清数字科技产业有限公司 Novel radio frequency receiving tuner system
CN104660290A (en) * 2015-03-11 2015-05-27 武汉大学苏州研究院 Current-reusable low-power-consumption radio frequency front-end receiving circuit

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10367452B2 (en) * 2017-03-16 2019-07-30 Infineon Technologies Ag System and method for a dual-core VCO

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200934098A (en) * 2008-01-17 2009-08-01 Univ Nat Taiwan Transistor voltage-controlled oscillator
WO2009104839A1 (en) * 2008-02-21 2009-08-27 Electronics And Telecommunications Research Institute The differential vco and quadrature vco using center-tapped cross-coupling of transformer
CN103023460A (en) * 2012-11-28 2013-04-03 上海高清数字科技产业有限公司 Novel radio frequency receiving tuner system
CN104660290A (en) * 2015-03-11 2015-05-27 武汉大学苏州研究院 Current-reusable low-power-consumption radio frequency front-end receiving circuit

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
F.Barale,等."A 60 GHz-Standard Compatible Programmable 50 GHz Phase-Locked Loop in 90 nm CMOS".《IEEE MIRCROWAVE AND WIRELESS COMPONENTS LETTERS》.2010,第20卷(第20期),全文. *
Luca Fanori,等."A 2.4-to-5.3GHz dual-core CMOS VCO with concentric 8-shaped coils".《2014 IEEE International Solid-State Circuits Conference Digest of Technical Papers(ISSCC)》.2014,全文. *

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