CN111342775A - Dual-core oscillator based on current multiplexing and transformer coupling buffer amplifier - Google Patents

Dual-core oscillator based on current multiplexing and transformer coupling buffer amplifier Download PDF

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CN111342775A
CN111342775A CN201811557862.9A CN201811557862A CN111342775A CN 111342775 A CN111342775 A CN 111342775A CN 201811557862 A CN201811557862 A CN 201811557862A CN 111342775 A CN111342775 A CN 111342775A
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transformer
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transistor
oscillator
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CN111342775B (en
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李英男
马建国
郑玉学
周绍华
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Tianjin University Marine Technology Research Institute
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H03B5/1228—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device the amplifier comprising one or more field effect transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B2200/00—Indexing scheme relating to details of oscillators covered by H03B
    • H03B2200/006—Functional aspects of oscillators
    • H03B2200/0062—Bias and operating point
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B2200/00—Indexing scheme relating to details of oscillators covered by H03B
    • H03B2200/006—Functional aspects of oscillators
    • H03B2200/0082—Lowering the supply voltage and saving power
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B2200/00—Indexing scheme relating to details of oscillators covered by H03B
    • H03B2200/006—Functional aspects of oscillators
    • H03B2200/0088—Reduction of noise
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
    • Y02D30/00—Reducing energy consumption in communication networks
    • Y02D30/70—Reducing energy consumption in communication networks in wireless communication networks

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Abstract

A dual-core oscillator based on current multiplexing and transformer coupling buffer amplifiers is composed of three parts, namely a cross-coupled oscillator core 1, a core 2 and an output buffer amplifier, wherein the two parts have the same structure, the cross-coupled oscillator core 1 and the core 2 are positioned at the bottom of a voltage-controlled oscillator, and the output buffer amplifier is positioned at the top; the three sections are coupled together by a three-coil strong coupling transformer T. By adopting a current multiplexing technology and a dual-core structure, the three-coil strong coupling transformer is coupled with the two VCO oscillation cores and the buffer amplifier, so that the output power of the voltage-controlled oscillator is greatly increased, and the phase noise of the oscillator is reduced.

Description

Dual-core oscillator based on current multiplexing and transformer coupling buffer amplifier
Technical Field
The invention relates to the field of radio frequency integrated circuits, in particular to a dual-core oscillator based on current multiplexing and transformer coupling buffer amplifiers, which has high output power and low phase noise.
Background
One of the important challenges facing the design of rf front-end modules is to implement a fully integrated, low power consumption, low phase noise Voltage Controlled Oscillator (VCO). In recent years, doppler radar systems have been applied to wireless sensors, such as position and distance sensing, automotive anti-collision radar, heart beat monitoring and detection. High efficiency circuits are critical for long-term operation of the radar under battery power. Over the past decades, many approaches have been proposed to reduce the power consumption of oscillators, with low voltage operation being one of the most promising solutions. However, the reduction in operating voltage limits the amplitude of the signal, resulting in degradation of VCO phase noise. This will severely degrade the performance of the receiver.
In general, a VCO is used to drive up/down converter mixers in a radio frequency transceiver. Design parameters to be considered are many, such as tuning range, phase noise, output power and efficiency. High frequency oscillators can be implemented in SiGe processes because they have superior power handling and higher fTAnd fmax[1]. However, such a process is not easily integrated with standard CMOS circuitry. Document [2 ]]The tuning range is expanded by using a switch inductor, but three commonly used source amplifiers are needed to improve the output power. Therefore, it will require more dc power. [3]-[5]The drain-source transformer feedback VCO is reported in. The method can obtain larger voltage fluctuation under low power supply voltage. However, the parasitic capacitance of the transformer limits the tuning range.
To address this challenge, some researchers have combined standard CMOS processes with non-conventional processes, such as thick metallization inductors or external high Q inductors [6 ]]. The oscillation condition of the oscillator is gm RTANK≧ 1, where gm is the transconductance of the oscillator, RTANKIs the equivalent resistance of the capacitance-inductance resonant cavity when in resonance. If a high Q capacitance-to-inductance resonator is used, RTANKIt will increase, thereby reducing the minimum gm value required for oscillation and consequently resulting in a smaller leakage current requirement. Since the phase noise of an oscillator is inversely proportional to the quality factor of its cavity, not only can low power consumption be achieved, but also low phase noise characteristics can result. However, high Q passive components cannot be easily integrated into CMOS platforms, so this approach does not meet the market demand for miniaturized, low cost, low power communication devices.
[ REFERENCE ] to
[1]N. Mahalingam, K. Ma, K. S. Yeo, and W. M. Lim, “K -band high-PAEwide-tuning-range VCO using triple-coupled LC tanks,” IEEE Trans. CircuitsSyst. II, Exp. Briefs, vol. 60, no. 11, pp. 736–740, Nov. 2013.
[2]J. Zhang, N. Sharma, and K. K. O, “21.5-to-33.4 GHz voltage-controlled oscillator using NMOS switched inductors in CMOS,” IEEE Microw.Wireless Compon. Lett., vol. 24, no. 7, pp. 478–480, Jul. 2014.
[3]C.-A. Lin, J.-L. Kuo, K.-Y. Lin, and H. Wang, “A 24 GHz low power VCOwith transformer feedback,” in Proc. IEEE Radio Freq. Integr. Circuits Symp.,Jun. 2009, pp. 75–78. [4]S. L. Liu, X. C. Tian, Y. Hao, and A. Chin, “Abias-varied low-power K-band VCO in 90 nm CMOS technology,” IEEE Microw.Wireless Compon. Lett., vol. 22, no. 6, pp. 321–323, Jun. 2012. [5]J. Yang,C.-Y. Kim, D.-W. Kim, and S. Hong, “Design of a 24-GHz CMOS VCO with anasymmetric-width transformer,” IEEE Trans. Circuits Syst. II, Exp. Briefs,vol. 57, no. 3, pp. 173–177, Mar. 2010.
[6]B. P. Otis and J. M. Rabaey, “A 300 W 1.9-GHz CMOS oscillatorutilizing micromachined resonators,” IEEE J. Solid-State Circuits, vol. 38,no. 7, pp. 1271–1274, Jul. 2003。
Disclosure of Invention
In order to solve the problems of low output power and high phase noise of the millimeter wave voltage-controlled oscillator, the invention provides a dual-core oscillator based on current multiplexing and transformer coupling buffer amplifiers. By adopting a current multiplexing technology and a dual-core structure, the three-coil strong coupling transformer is coupled with the two VCO oscillation cores and the buffer amplifier, so that the output power of the voltage-controlled oscillator is greatly increased, and the phase noise of the oscillator is reduced.
The voltage-controlled oscillator comprises three parts, namely a cross-coupled oscillator core 1, a cross-coupled oscillator core 2 and an output buffer amplifier, wherein the cross-coupled oscillator core 1 and the cross-coupled oscillator core 2 are in the same structure, the cross-coupled oscillator core 1 and the cross-coupled oscillator core 2 are positioned at the bottom of the voltage-controlled oscillator, and the output buffer amplifier is positioned at the top; the three sections are coupled together by a three-coil strong coupling transformer T.
The core 1 comprises varactors Cv1, Cv2, transistors M1 and M2 and a secondary coil L2 of a transformer T; the gate of the transistor M1 is connected with the drain of the transistor M2, and the gate of the transistor M2 is connected with the drain of the transistor M1 to form a cross-coupled core transistor pair generating negative resistance; the sources of the transistors M1 and M2 are grounded, respectively. Positive terminals of the varactors Cv1 and Cv2 are butted back to back, and negative terminals of the two varactors Cv1 and Cv2 are connected with a secondary coil L2 of the transformer T, so that the two varactors Cv1 and Cv2 are connected with the secondary coil L2 of the transformer T in parallel to form a resonant cavity of the core 1.
The core 2 comprises varactors Cv3, Cv4, transistors M3 and M4 and a tertiary coil L3 of a transformer T. The gate of the transistor M3 is connected with the drain of the transistor M4, and the gate of the transistor M4 is connected with the drain of the transistor M3 to form a cross-coupled core transistor pair generating negative resistance; the sources of the transistors M3 and M4 are grounded respectively; positive terminals of the varactors Cv3 and Cv4 are in back-to-back butt joint, and negative terminals of the two varactors Cv3 and Cv4 are connected with a tertiary coil L3 of the transformer T, so that the two varactors Cv3 and Cv4 are connected with the tertiary coil L3 of the transformer T in parallel to form a resonant cavity of the core 2.
The output buffer amplifier comprises inductors L4 and L5, transistors M5 and M6 and a primary coil L1 of a transformer T; the drains of the transistors M5 and M6 are respectively connected with a power supply VDD through inductors L4 and L5; the sources of the transistors M5 and M6 are connected to the center taps of the secondary and tertiary coil transformers of the VCO at the point X, so that the reuse of the direct current is realized, the power consumption of the system is reduced, and the purpose of high efficiency is achieved; the gates of transistors M5, M6 are connected to bias voltage Vb via the center tap of primary coil L1.
Further, the drains of the transistors M5 and M6 output a set of differential signals Vn and Vp, respectively.
Furthermore, tuning voltages V are connected among the varactors Cv1, Cv2, Cv3 and Cv4TAnd performing frequency tuning.
Based on the technical scheme, the dual-core oscillator based on the current multiplexing and transformer coupling buffer amplifier has the following innovation and beneficial effects:
1. the current multiplexing technique is used, and a center-tapped transformer is used to integrate the cross-coupled pairs and the buffer amplifier. The conventional design would be at VA buffer amplifier is connected directly after the CO to increase the power, however, the overall efficiency obtained with this method is not good. The advantage of the connection method provided by the invention is that the bias (Vb) of the buffer amplifier can be directly set through the center tap of the primary coil of the transformer, so that the bias of the buffer amplifier can not depend on the working condition of the voltage-controlled oscillator any more. Simulation verifies that the peak output power of the VCO can reach more than 4dBm (as shown in figure 1), the power consumption is 8.4mW, and the formula shows that
Figure RE-RE-DEST_PATH_IMAGE002
The calculated peak efficiency can reach about 30%.
2. The dual core structure is adopted to improve the phase noise performance. From the angle of the overall structure of the oscillator, a dual-core structure (namely, two oscillator topology cores are coupled) is adopted, and each oscillator core has a local resonant cavity, so that high resonant current of each capacitance-inductance resonant cavity only circulates locally. In this case, the capacitance value of the capacitor in parallel is doubled, the inductance value in parallel is halved, the oscillation frequency is kept unchanged, but the equivalent resistance of the parallel resonant cavity is halved, and the phase noise is reduced by 3dB theoretically. The combination of the two methods can greatly break through the design bottleneck that the output power and the phase noise of the existing microwave radio frequency voltage-controlled oscillator are mutually contained.
Drawings
FIG. 1 is a graph of simulation results of output power at different frequencies;
fig. 2 is a schematic diagram of a dual-core oscillator architecture based on current multiplexing and transformer coupling.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is further described in detail below with reference to the accompanying drawings in combination with specific examples. For those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.
As shown in fig. 2, the voltage-controlled oscillator of the present invention is composed of three parts, i.e., a cross-coupled oscillator core 1, a cross-coupled oscillator core 2 and an output buffer amplifier, which have the same structure, wherein the cross-coupled oscillator core 1 and the cross-coupled oscillator core 2 are located at the bottom of the voltage-controlled oscillator, and the output buffer amplifier is located at the top; the three sections are coupled together by a three-coil strong coupling transformer T.
The core 1 comprises varactors Cv1, Cv2, transistors M1 and M2 and a secondary coil L2 of a transformer T. The drains of the transistors M1 and M2 are connected to two ends of the secondary coil L2 of the transformer, respectively. The gate of the transistor M1 is connected to the drain of the transistor M2, and the gate of the transistor M2 is connected to the drain of the transistor M1, forming a cross-coupling. The positive electrodes of the varactors Cv1 and Cv2 are connected, and the negative electrodes are respectively connected with the drains of the transistors M1 and M2.
The core 2 comprises varactors Cv3, Cv4, transistors M3 and M4 and a tertiary coil L3 of a transformer T. The drains of the transistors M3 and M4 are respectively connected to two ends of the transformer tertiary winding L3. The gate of the transistor M3 is connected to the drain of the transistor M4, and the gate of the transistor M4 is connected to the drain of the transistor M3, forming a cross-coupling. The positive electrodes of the varactors Cv3 and Cv4 are connected, and the negative electrodes are respectively connected with the drains of the transistors M3 and M4.
The buffer amplifier includes transistors M5 and M6, and inductors L4 and L5. The gates of the buffer amplifiers M5 and M6 are connected to both ends of the primary coil L1 of the transformer, respectively, and the sources are connected to the center taps of the secondary coil L2 and the tertiary coil L3 of the transformer.

Claims (3)

1. A dual-core oscillator based on current multiplexing and transformer coupled buffer amplifiers, characterized by:
the cross-coupled oscillator comprises a cross-coupled oscillator core 1, a cross-coupled oscillator core 2 and an output buffer amplifier, wherein the cross-coupled oscillator core 1 and the cross-coupled oscillator core 2 are in the same structure and are positioned at the bottom of a voltage-controlled oscillator, and the output buffer amplifier is positioned at the top; the three parts are coupled by a three-coil strong coupling transformer T;
the core 1 comprises varactors Cv1, Cv2, transistors M1 and M2 and a secondary coil L2 of a transformer T; the gate of the transistor M1 is connected with the drain of the transistor M2, and the gate of the transistor M2 is connected with the drain of the transistor M1 to form a cross-coupled core transistor pair generating negative resistance; the sources of the transistors M1 and M2 are grounded respectively; positive ends of the varactors Cv1 and Cv2 are butted back to back, and negative ends of the two varactors Cv1 and Cv2 are connected with a secondary coil L2 of the transformer T, so that the two varactors Cv1 and Cv2 are connected with the secondary coil L2 of the transformer T in parallel to form a resonant cavity of the core 1;
the core 2 comprises varactors Cv3, Cv4, transistors M3 and M4 and a tertiary coil L3 of a transformer T; the gate of the transistor M3 is connected with the drain of the transistor M4, and the gate of the transistor M4 is connected with the drain of the transistor M3 to form a cross-coupled core transistor pair generating negative resistance; the sources of the transistors M3 and M4 are grounded respectively; positive ends of the varactors Cv3 and Cv4 are butted back to back, and negative ends of the two varactors Cv3 and Cv4 are connected with a tertiary coil L3 of the transformer T, so that the two varactors Cv3 and Cv4 are connected with the tertiary coil L3 of the transformer T in parallel to form a resonant cavity of the core 2;
the output buffer amplifier comprises inductors L4 and L5, transistors M5 and M6 and a primary coil L1 of a transformer T; the drains of the transistors M5 and M6 are respectively connected with a power supply VDD through inductors L4 and L5; the sources of the transistors M5 and M6 are connected to the center taps of the secondary and tertiary coil transformers of the VCO at the point X, so that the reuse of the direct current is realized, the power consumption of the system is reduced, and the purpose of high efficiency is achieved; the gates of transistors M5, M6 are connected to bias voltage Vb via the center tap of primary coil L1.
2. The dual-core oscillator based on the current multiplexing and transformer coupled buffer amplifier of claim 1, wherein: the drains of the transistors M5, M6 output a set of differential signals Vn and Vp, respectively.
3. The dual-core oscillator based on the current multiplexing and transformer coupled buffer amplifier of claim 1, wherein: tuning voltage V is connected between Cv1, Cv2 and Cv3, Cv4TAnd performing frequency tuning.
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Cited By (3)

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Publication number Priority date Publication date Assignee Title
CN112152566A (en) * 2020-09-16 2020-12-29 清华大学 Doherty power amplifier based on dynamic power distribution
CN112671343A (en) * 2020-12-25 2021-04-16 清华大学 Voltage controlled oscillator
CN115932748A (en) * 2023-03-02 2023-04-07 北京大有半导体有限责任公司 On-chip radio frequency radar transmitting system and on-chip radio frequency radar

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112152566A (en) * 2020-09-16 2020-12-29 清华大学 Doherty power amplifier based on dynamic power distribution
CN112152566B (en) * 2020-09-16 2022-07-05 清华大学 Doherty power amplifier based on dynamic power distribution
CN112671343A (en) * 2020-12-25 2021-04-16 清华大学 Voltage controlled oscillator
CN115932748A (en) * 2023-03-02 2023-04-07 北京大有半导体有限责任公司 On-chip radio frequency radar transmitting system and on-chip radio frequency radar
CN115932748B (en) * 2023-03-02 2023-10-24 北京大有半导体有限责任公司 On-chip radio frequency radar transmitting system and on-chip radio frequency radar

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