WO2008114644A1 - レジストパターン形成方法及びそれに用いるレジストパターン不溶化樹脂組成物 - Google Patents

レジストパターン形成方法及びそれに用いるレジストパターン不溶化樹脂組成物 Download PDF

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Publication number
WO2008114644A1
WO2008114644A1 PCT/JP2008/054343 JP2008054343W WO2008114644A1 WO 2008114644 A1 WO2008114644 A1 WO 2008114644A1 JP 2008054343 W JP2008054343 W JP 2008054343W WO 2008114644 A1 WO2008114644 A1 WO 2008114644A1
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WO
WIPO (PCT)
Prior art keywords
resist pattern
resin composition
insolubilizing
resist
composition capable
Prior art date
Application number
PCT/JP2008/054343
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English (en)
French (fr)
Inventor
Atsushi Nakamura
Tomoki Nagai
Takayoshi Abe
Tomohiro Kakizawa
Original Assignee
Jsr Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
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Application filed by Jsr Corporation filed Critical Jsr Corporation
Priority to US12/526,045 priority Critical patent/US20100323292A1/en
Priority to JP2009505143A priority patent/JPWO2008114644A1/ja
Priority to EP08721759A priority patent/EP2128706A4/en
Publication of WO2008114644A1 publication Critical patent/WO2008114644A1/ja
Priority to US13/489,683 priority patent/US20120244478A1/en

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70466—Multiple exposures, e.g. combination of fine and coarse exposures, double patterning or multiple exposures for printing a single feature
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0035—Multiple processes, e.g. applying a further resist layer on an already in a previously step, processed pattern or textured surface
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Materials For Photolithography (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

　（１）第一のレジスト層にマスクを介して選択的に露光した後、現像して第一のレジストパターンを形成する工程と、（２）第一のレジストパターン上に、第一のレジストパターンを不要化することが可能なレジストパターン不溶化樹脂組成物を塗布し、ベーク又はＵＶキュア後、現像して、第一のレジストパターンを不溶化レジストパターンとする工程と、（３）不溶化レジストパターン上に第二のレジスト層を形成し、第二のレジスト層にマスクを介して選択的に露光する工程と、（４）現像して第二のレジストパターンを形成する工程と、を含むレジストパターン形成方法である。
PCT/JP2008/054343 2007-03-16 2008-03-11 レジストパターン形成方法及びそれに用いるレジストパターン不溶化樹脂組成物 WO2008114644A1 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
US12/526,045 US20100323292A1 (en) 2007-03-16 2008-03-11 Resist pattern formation method, and resin composition capable of insolubilizing resist pattern
JP2009505143A JPWO2008114644A1 (ja) 2007-03-16 2008-03-11 レジストパターン形成方法及びそれに用いるレジストパターン不溶化樹脂組成物
EP08721759A EP2128706A4 (en) 2007-03-16 2008-03-11 METHOD FOR FORMING RESIST PATTERN AND RESIN COMPOSITION CAPABLE OF INSOLUBILIZING RESIST PATTERN
US13/489,683 US20120244478A1 (en) 2007-03-16 2012-06-06 Resist pattern formation method

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2007-069238 2007-03-16
JP2007069238 2007-03-16
JP2007246843 2007-09-25
JP2007-246843 2007-09-25

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US13/489,683 Division US20120244478A1 (en) 2007-03-16 2012-06-06 Resist pattern formation method

Publications (1)

Publication Number Publication Date
WO2008114644A1 true WO2008114644A1 (ja) 2008-09-25

Family

ID=39765752

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/054343 WO2008114644A1 (ja) 2007-03-16 2008-03-11 レジストパターン形成方法及びそれに用いるレジストパターン不溶化樹脂組成物

Country Status (6)

Country Link
US (2) US20100323292A1 (ja)
EP (1) EP2128706A4 (ja)
JP (1) JPWO2008114644A1 (ja)
KR (1) KR20100014831A (ja)
TW (1) TW200903582A (ja)
WO (1) WO2008114644A1 (ja)

Cited By (32)

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JP2009069817A (ja) * 2007-08-22 2009-04-02 Shin Etsu Chem Co Ltd パターン形成方法及びこれに用いるパターン表面コート材
WO2009093686A1 (ja) * 2008-01-24 2009-07-30 Jsr Corporation レジストパターン形成方法及びレジストパターン微細化樹脂組成物
WO2009126490A1 (en) * 2008-04-11 2009-10-15 Sandisk 3D Llc Double patterning method
JP2010066489A (ja) * 2008-09-10 2010-03-25 Jsr Corp ポジ型感放射線性樹脂組成物及びそれを用いたレジストパターン形成方法
JP2010096992A (ja) * 2008-10-16 2010-04-30 Jsr Corp レジストパターン形成方法及びそれに用いるポジ型感放射線性樹脂組成物
WO2010073390A1 (ja) * 2008-12-26 2010-07-01 富士通株式会社 パターンの形成方法及び半導体装置の製造方法、並びにレジストパターンの被覆層の形成材料
US7759201B2 (en) 2007-12-17 2010-07-20 Sandisk 3D Llc Method for fabricating pitch-doubling pillar structures
US20100183851A1 (en) * 2009-01-21 2010-07-22 Yi Cao Photoresist Image-forming Process Using Double Patterning
JP2010171039A (ja) * 2009-01-20 2010-08-05 Toshiba Corp 半導体装置の製造方法
US7786015B2 (en) 2008-04-28 2010-08-31 Sandisk 3D Llc Method for fabricating self-aligned complementary pillar structures and wiring
JP2010210751A (ja) * 2009-03-09 2010-09-24 Jsr Corp レジストパターンコーティング剤及びそれを用いたレジストパターン形成方法
JP2010250263A (ja) * 2009-03-25 2010-11-04 Jsr Corp レジストパターン形成方法及びそれに用いるレジストパターン不溶化樹脂組成物
KR20100127184A (ko) 2009-05-25 2010-12-03 신에쓰 가가꾸 고교 가부시끼가이샤 레지스트 변성용 조성물 및 패턴 형성 방법
KR20110014531A (ko) 2009-08-05 2011-02-11 신에쓰 가가꾸 고교 가부시끼가이샤 패턴 형성 방법, 화학 증폭 포지티브형 레지스트 재료, 및, 레지스트 변성용 조성물
JP2011039491A (ja) * 2009-05-19 2011-02-24 Rohm & Haas Electronic Materials Llc 多重露光フォトリソグラフィーのための組成物および方法
JP2011059583A (ja) * 2009-09-14 2011-03-24 Jsr Corp 微細パターン形成用樹脂組成物および微細パターン形成方法、ならびに重合体
WO2011034007A1 (ja) * 2009-09-16 2011-03-24 Jsr株式会社 感放射線性樹脂組成物及びレジストパターン形成方法
JP2011081041A (ja) * 2009-10-02 2011-04-21 Jsr Corp レジストパターンコーティング剤及びレジストパターン形成方法
US20110123936A1 (en) * 2008-09-19 2011-05-26 Jsr Corporation Resist pattern coating agent and resist pattern-forming method
US7981592B2 (en) 2008-04-11 2011-07-19 Sandisk 3D Llc Double patterning method
JP2011180385A (ja) * 2010-03-01 2011-09-15 Jsr Corp 感放射線性組成物及びレジストパターン形成方法
US8026178B2 (en) 2010-01-12 2011-09-27 Sandisk 3D Llc Patterning method for high density pillar structures
JP2011197150A (ja) * 2010-03-17 2011-10-06 Jsr Corp 感放射線性組成物及びそれを用いたレジストパターン形成方法
EP2378362A1 (en) * 2008-10-21 2011-10-19 JSR Corporation Resist pattern coating agent and resist pattern forming method using the same
EP2230552A3 (en) * 2009-03-11 2011-11-02 Dongjin Semichem Co., Ltd Method for forming fine pattern in semiconductor device
JPWO2010061833A1 (ja) * 2008-11-28 2012-04-26 Jsr株式会社 レジストパターンコーティング剤およびレジストパターン形成方法
US8367310B2 (en) 2009-02-18 2013-02-05 Shin-Etsu Chemical Co., Ltd. Pattern forming process and resist-modifying composition
US8426105B2 (en) 2009-05-25 2013-04-23 Shin-Etsu Chemical Co., Ltd. Resist-modifying composition and pattern forming process
JP2013092797A (ja) * 2013-01-07 2013-05-16 Fujitsu Ltd パターンの形成方法及び半導体装置の製造方法
CN103226285A (zh) * 2008-12-26 2013-07-31 富士通株式会社 图案形成方法和半导体装置的制造方法
JP2016006510A (ja) * 2011-02-28 2016-01-14 富士フイルム株式会社 パターン形成方法、感活性光線性又は感放射線性樹脂組成物及びレジスト膜
JP2016048374A (ja) * 2010-03-31 2016-04-07 Jsr株式会社 感放射線性樹脂組成物

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KR20140095541A (ko) * 2007-05-23 2014-08-01 제이에스알 가부시끼가이샤 패턴 형성 방법 및 그 방법에 사용하는 수지 조성물
TWI452444B (zh) 2008-07-14 2014-09-11 Jsr Corp 光阻圖型不溶化樹脂組成物及使用其之光阻圖型形成方法
US8084186B2 (en) 2009-02-10 2011-12-27 Az Electronic Materials Usa Corp. Hardmask process for forming a reverse tone image using polysilazane
KR101096163B1 (ko) 2010-03-10 2011-12-19 주식회사 하이닉스반도체 반도체장치 제조 방법
US8211807B2 (en) * 2010-10-19 2012-07-03 Taiwan Semiconductor Manufacturing Company, Ltd. Double patterning technology using single-patterning-spacer-technique
US8448120B2 (en) 2011-05-09 2013-05-21 Taiwan Semiconductor Manufacturing Co., Ltd. RC extraction for single patterning spacer technique
US20130213894A1 (en) * 2012-02-17 2013-08-22 Jsr Corporation Cleaning method of immersion liquid, immersion liquid cleaning composition, and substrate
JP6531397B2 (ja) * 2014-03-07 2019-06-19 Jsr株式会社 パターン形成方法及びこれに用いられる組成物
US10061199B2 (en) * 2015-06-24 2018-08-28 Tokyo Electron Limited Methods of forming a mask for substrate patterning

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Cited By (49)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009069817A (ja) * 2007-08-22 2009-04-02 Shin Etsu Chem Co Ltd パターン形成方法及びこれに用いるパターン表面コート材
US7759201B2 (en) 2007-12-17 2010-07-20 Sandisk 3D Llc Method for fabricating pitch-doubling pillar structures
WO2009093686A1 (ja) * 2008-01-24 2009-07-30 Jsr Corporation レジストパターン形成方法及びレジストパターン微細化樹脂組成物
US8206894B2 (en) 2008-01-24 2012-06-26 Takayoshi Abe Resist pattern-forming method and resist pattern miniaturizing resin composition
WO2009126490A1 (en) * 2008-04-11 2009-10-15 Sandisk 3D Llc Double patterning method
US8178286B2 (en) 2008-04-11 2012-05-15 Sandisk 3D Llc Double patterning method
US7713818B2 (en) 2008-04-11 2010-05-11 Sandisk 3D, Llc Double patterning method
US7981592B2 (en) 2008-04-11 2011-07-19 Sandisk 3D Llc Double patterning method
US7786015B2 (en) 2008-04-28 2010-08-31 Sandisk 3D Llc Method for fabricating self-aligned complementary pillar structures and wiring
JP2010066489A (ja) * 2008-09-10 2010-03-25 Jsr Corp ポジ型感放射線性樹脂組成物及びそれを用いたレジストパターン形成方法
US20110123936A1 (en) * 2008-09-19 2011-05-26 Jsr Corporation Resist pattern coating agent and resist pattern-forming method
JP2010096992A (ja) * 2008-10-16 2010-04-30 Jsr Corp レジストパターン形成方法及びそれに用いるポジ型感放射線性樹脂組成物
EP2378362A4 (en) * 2008-10-21 2012-07-04 Jsr Corp RESISTANCE STRUCTURES AND METHOD FOR FORMING A RESISTANCE STRUCTURE THEREWITH
EP2378362A1 (en) * 2008-10-21 2011-10-19 JSR Corporation Resist pattern coating agent and resist pattern forming method using the same
JPWO2010061833A1 (ja) * 2008-11-28 2012-04-26 Jsr株式会社 レジストパターンコーティング剤およびレジストパターン形成方法
CN103226285A (zh) * 2008-12-26 2013-07-31 富士通株式会社 图案形成方法和半导体装置的制造方法
CN102265221B (zh) * 2008-12-26 2014-03-19 富士通株式会社 图案形成方法和半导体装置的制造方法、以及抗蚀剂图案的被覆层的形成材料
CN102265221A (zh) * 2008-12-26 2011-11-30 富士通株式会社 图案形成方法和半导体装置的制造方法、以及抗蚀剂图案的被覆层的形成材料
JP5240297B2 (ja) * 2008-12-26 2013-07-17 富士通株式会社 パターンの形成方法及び半導体装置の製造方法、並びにレジストパターンの被覆層の形成材料
US8906598B2 (en) 2008-12-26 2014-12-09 Fujitsu Limited Pattern forming method, method for manufacturing semiconductor device, and material for forming coating layer of resist pattern
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JP2010171039A (ja) * 2009-01-20 2010-08-05 Toshiba Corp 半導体装置の製造方法
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