US20150326326A1 - RF Transmit Path Calibration via On-Chip Dummy Load - Google Patents

RF Transmit Path Calibration via On-Chip Dummy Load Download PDF

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Publication number
US20150326326A1
US20150326326A1 US14/272,387 US201414272387A US2015326326A1 US 20150326326 A1 US20150326326 A1 US 20150326326A1 US 201414272387 A US201414272387 A US 201414272387A US 2015326326 A1 US2015326326 A1 US 2015326326A1
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switch
signal
transmit
output
terminating
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US14/272,387
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Dan William Nobbe
David Kovac
Chris Olson
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PSemi Corp
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Peregrine Semiconductor Corp
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Priority claimed from US13/828,121 external-priority patent/US9595923B2/en
Priority claimed from US14/042,312 external-priority patent/US9276527B2/en
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Priority to US14/272,387 priority Critical patent/US20150326326A1/en
Assigned to PEREGRINE SEMICONDUCTOR CORPORATION reassignment PEREGRINE SEMICONDUCTOR CORPORATION ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: KOVAC, DAVID, NOBBE, DAN WILLIAM, OLSON, CHRIS
Publication of US20150326326A1 publication Critical patent/US20150326326A1/en
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    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04BTRANSMISSION
    • H04B17/00Monitoring; Testing
    • H04B17/10Monitoring; Testing of transmitters
    • H04B17/11Monitoring; Testing of transmitters for calibration
    • H04B17/12Monitoring; Testing of transmitters for calibration of transmit antennas, e.g. of the amplitude or phase
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04BTRANSMISSION
    • H04B7/00Radio transmission systems, i.e. using radiation field
    • H04B7/02Diversity systems; Multi-antenna system, i.e. transmission or reception using multiple antennas
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F1/00Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/30Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
    • H03F1/301Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in MOSFET amplifiers
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F1/00Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/30Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189High frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/193High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189High frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/195High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/213Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only in integrated circuits
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04BTRANSMISSION
    • H04B1/00Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/06Receivers
    • H04B1/16Circuits
    • H04B1/18Input circuits, e.g. for coupling to an antenna or a transmission line
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04BTRANSMISSION
    • H04B1/00Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/38Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
    • H04B1/40Circuits
    • H04B1/44Transmit/receive switching
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04BTRANSMISSION
    • H04B1/00Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/38Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
    • H04B1/40Circuits
    • H04B1/50Circuits using different frequencies for the two directions of communication
    • H04B1/52Hybrid arrangements, i.e. arrangements for transition from single-path two-direction transmission to single-direction transmission on each of two paths or vice versa
    • H04B1/525Hybrid arrangements, i.e. arrangements for transition from single-path two-direction transmission to single-direction transmission on each of two paths or vice versa with means for reducing leakage of transmitter signal into the receiver
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04BTRANSMISSION
    • H04B15/00Suppression or limitation of noise or interference
    • H04B15/005Reducing noise, e.g. humm, from the supply
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04BTRANSMISSION
    • H04B7/00Radio transmission systems, i.e. using radiation field
    • H04B7/015Reducing echo effects
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04LTRANSMISSION OF DIGITAL INFORMATION, e.g. TELEGRAPHIC COMMUNICATION
    • H04L27/00Modulated-carrier systems
    • H04L27/18Phase-modulated carrier systems, i.e. using phase-shift keying
    • H04L27/20Modulator circuits; Transmitter circuits
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F2200/00Indexing scheme relating to amplifiers
    • H03F2200/18Indexing scheme relating to amplifiers the bias of the gate of a FET being controlled by a control signal
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F2200/00Indexing scheme relating to amplifiers
    • H03F2200/451Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F2200/00Indexing scheme relating to amplifiers
    • H03F2200/456A scaled replica of a transistor being present in an amplifier
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F2200/00Indexing scheme relating to amplifiers
    • H03F2200/471Indexing scheme relating to amplifiers the voltage being sensed
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F2200/00Indexing scheme relating to amplifiers
    • H03F2200/555A voltage generating circuit being realised for biasing different circuit elements
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/04Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only

Definitions

  • the present application may be related to U.S. Pat. No. 6,804,502, issued on Oct. 12, 2004 and entitled “Switch Circuit and Method of Switching Radio Frequency Signals”, the disclosure of which is incorporated herein by reference in its entirety.
  • the present application may also be related to U.S. Pat. No. 7,910,993, issued on Mar. 22, 2011 and entitled “Method and Apparatus for use in Improving Linearity of MOSFET' s using an Accumulated Charge Sink”, the disclosure of which is incorporated herein by reference in its entirety.
  • the present application may also be related to U.S. patent application Ser. No. 13/797,779 entitled “Scalable Periphery Tunable Matching Power Amplifier”, filed on Mar.
  • the present application may also be related to International Application No. PCT/US2009/001358, entitled “Method and Apparatus for use in digitally tuning a capacitor in an integrated circuit device”, filed on Mar. 2, 2009, the disclosure of which is incorporated herein by reference in its entirety.
  • the present application may also be related to U.S. patent application Ser. No. 13/595,893, entitled “Methods and Apparatuses for Use in Tuning Reactance in a Circuit Device”, filed on Aug. 27, 2012, the disclosure of which is incorporated herein by reference in its entirety.
  • the present application may also be related to U.S. patent application Ser. No. 14/042,312, filed on Sep.
  • the present teachings relate to RF (radio frequency) circuits. More particularly, the present teachings relate to methods and apparatuses for calibration of an RF transmit path via on-chip dummy load.
  • RF devices such as cell phone transmitters
  • RF devices are becoming increasingly complex due to additional frequency bands, more complex modulation schemes, higher modulation bandwidths, and the introduction of efficiency improvement schemes such as envelope tracking.
  • the transmitter lineup in a transceiver commonly employs calibration techniques to improve modulator performance, remove DC offsets, calibrate power levels, and so on. This is done at phone power up, and even periodically to remove temperature and frequency variations.
  • the full transmit path through an associated power amplifier (PA) and even through associated filters and antenna switch(es), is usually calibrated only in an RF device production test environment, then not ever again.
  • PA power amplifier
  • New transceivers are implementing a full receive path to monitor the PA output so it can make updates to track out performance shifts due to frequency, temperature, and battery voltage variations.
  • This receive path requires the RF device (e.g. cell phone) to be in a call to carry out the closed loop updates, however, the transmission quality must meet system requirements before the closed loop corrections can be implemented.
  • a radio frequency (RF) circuital arrangement configured to transmit an RF signal at an output RF transmit port via one or more RF transmit paths, wherein a transmit path of the one or more transmit RF paths comprises: one or more adjustable RF devices configured during operation to affect one or more characteristics of the RF signal; and a terminating switch positioned between an adjustable RF device of the one or more adjustable RF devices and the output RF transmit port, wherein: during a first mode of operation of the RF transmit path, the terminating switch is configured to couple the RF signal to the output RF transmit port, and during a second mode of operation of the RF transmit path, the terminating switch is configured to isolate the RF signal from the output RF transmit port and terminate the RF signal into a terminating load connected to a terminating terminal of the terminating switch.
  • RF radio frequency
  • a monolithically integrated radio frequency (RF) circuit comprising: an RF switch comprising a common terminal and a plurality of switching terminals, wherein during operation the switch is adapted to connect a selected switching terminal of the plurality of switching terminals to the common terminal, and a resistor connected via a first terminal of the resistor, to a terminating switching terminal of the plurality of switching terminals, wherein the RF switch and the resistor are monolithically integrated on a same integrated circuit.
  • RF radio frequency
  • a method for calibrating a transmit path of a radio frequency (RF) front-end stage comprising: providing a switchable load impedance in a transmit path; during a calibration of the transmit path, terminating the transmit path at the switchable load impedance; based on the terminating, reducing an output RF signal power at an output antenna of the transmit path; based on the terminating, measuring an RF signal characteristic at the switchable load impedance; based on the measuring, adjusting an adjustable RF device of the transmit path, and based on the adjusting, calibrating the transmit path, wherein the reducing provides an output RF signal power at the output antenna of the transmit path lower than a desired RF transmission power.
  • RF radio frequency
  • a method for calibrating a transmit path of a radio frequency (RF) front-end stage comprising: providing an RF front-end stage comprising one or more transmit paths, wherein each transmit path of the one or more transmit paths is adapted to be connected to a transmit port via an output RF switch; providing one or more RF switches, wherein an RF switch of the one or more RF switches is adapted to provide a series connection between two RF components of a transmit path of the plurality of transmit paths via a common terminal of the RF switch and a first switching terminal of the RF switch; selecting a transmit path of the plurality of transmit paths for transmission of an RF signal at the transmit port; configuring the output switch to connect the selected transmit path to the output port; configuring at least a subset of the one or more RF switches to provide series connections between two RF components of the selected transmit path; providing the RF signal to the selected transmit path; transmitting the RF signal based on the providing of the RF signal
  • FIG. 1 shows a block diagram of a multi-band and multi-channel RF front-end stage of an RF device, as used, for example, in a cellular phone.
  • the RF stage comprises transmit and receive paths for high frequency bands and low frequency bands.
  • FIG. 2A shows a transmit path and a receive path of the RF stage depicted in FIG. 1 .
  • FIG. 2B shows a configurable power amplifier module.
  • FIG. 3A and FIG. 3B show exemplary embodiments according to the present disclosure of a switchable dummy load in a transmit path which can be used to monitor an RF signal in the transmit path during a calibration step.
  • the switchable dummy load of FIG. 3A is positioned prior to an antenna switch of the RF stage.
  • FIG. 3C shows a relative position according to an embodiment of the present disclosure of a switchable dummy load within a transmit path of the RF front-end stage of FIG. 1 .
  • FIG. 3D shows a monolithically integrated switchable dummy load according to an embodiment of the present disclosure.
  • FIG. 3E shows an exemplary embodiment according to the present disclosure of a plurality of dummy loads in a transmit path which can each be used to monitor an RF signal in the transmit path during a calibration step.
  • Each switchable dummy load is positioned after an adjustable RF component of the transmit path.
  • FIG. 3F shows a monolithically integrated power amplifier module comprising an integrated switchable dummy load.
  • FIG. 4A shows an exemplary embodiment according to the present disclosure of a switchable dummy load in a transmit path which can be used to monitor the RF signal in the transmit path during a calibration step.
  • the switchable dummy load of FIG. 4A is positioned after the antenna switch of the RF stage.
  • FIG. 4B shows the embodiment of FIG. 4A with an added switch for a higher signal isolation with respect to an antenna.
  • FIG. 4C and FIG. 4D show a monolithically integrated antenna switch with built-in switchable dummy load according to an embodiment of the present disclosure.
  • FIG. 5 shows an exemplary embodiment according to the present disclosure of a switchable dummy load in a transmit path which can be used to monitor the RF signal in the transmit path during a calibration step.
  • the switchable dummy load of FIG. 5 is positioned after the antenna switch of the RF stage.
  • a signal coupler used to monitor the RF signal, switches in and out of the transmit path together with the dummy load.
  • FIG. 6A shows an equivalent AC signal circuit of a transmit path of the RF front-end stage of FIG. 1 .
  • FIG. 6B shows an exemplary embodiment according to the present disclosure of a switchable monitor impedance which can be used to monitor a transmitted RF signal in a transmit path while transmitting.
  • FIG. 6C shows a monolithically integrated antenna switch with built-in switchable monitor impedance of FIG. 6B .
  • FIG. 7 shows an exemplary embodiment according to the present disclosure of a switch with stacked transistors.
  • switch ON and “activate” may be used interchangeably and can refer to making a particular circuit element electronically operational.
  • switch OFF and “deactivate” may be used interchangeably and can refer to making a particular circuit element electronically non-operational.
  • amplifier and “power amplifier” may be used interchangeably and can refer to a device that is configured to amplify a signal input to the device to produce an output signal of greater magnitude than the magnitude of the input signal.
  • the present disclosure describes electrical circuits in electronics devices (e.g., cell phones, radios) having a plurality of devices, such as for example, transistors (e.g., MOSFETs).
  • transistors e.g., MOSFETs
  • Such electrical circuits comprising transistors can be arranged as amplifiers.
  • a plurality of such amplifiers can be arranged in a so-called “scalable periphery” (SP) architecture of amplifiers where a total number (e.g., 64) of amplifier segments are provided.
  • SP scalable periphery
  • the number of active devices e.g., 64, 32, etc.
  • a portion of the total number of amplifiers e.g. 1/64, 2/64, 40% of 64, etc.
  • the electronic device may desire to output a certain amount of power, which in turn, may require 32 of 64 SP amplifier segments to be used.
  • a lower amount of output power may be desired, in which case, for example, only 16 of 64 SP amplifier segments are used.
  • the number of amplifier segments used can be inferred by a nominal desired output power as a function of the maximum output power (e.g. when all the segments are activated).
  • the scalable periphery amplifier devices can be connected to corresponding impedance matching circuits.
  • the number of amplifier segments of the scalable periphery amplifier device that are turned on or turned off at a given moment can be according to a modulation applied to an input RF signal, a desired output power, a desired linearity requirement of the amplifier or any number of other requirements.
  • amplifier as used in the present disclosure is intended to refer to amplifiers comprising single or stacked transistors configured as amplifiers, and can be used interchangeably with the term “power amplifier (PA)”.
  • PA power amplifier
  • Such terms can refer to a device that is configured to amplify a signal input to the device to produce an output signal of greater magnitude than the magnitude of the input signal.
  • Stacked transistor amplifiers are described for example in U.S. Pat. No. 7,248,120, issued on Jul. 24, 2007, entitled “Stacked Transistor Method and Apparatus”, the disclosure of which is incorporated herein by reference in its entirety.
  • Such amplifier and power amplifiers can be applicable to amplifiers and power amplifiers of any stages (e.g., pre-driver, driver, final), known to those skilled in the art.
  • the term “mode” can refer to a wireless standard and its attendant modulation and coding scheme or schemes. As different modes may require different modulation schemes, these may affect required channel bandwidth as well as affect the peak-to-average-ratio (PAR), also referred to as peak-to-average-power-ratio (PAPR), as well as other parameters known to the skilled person.
  • PAR peak-to-average-ratio
  • PAPR peak-to-average-power-ratio
  • wireless standards include Global System for Mobile Communications (GSM), code division multiple access (CDMA), Worldwide Interoperability for Microwave Access (WiMAX), Long Term Evolution (LTE), as well as other wireless standards identifiable to a person skilled in the art.
  • modulation and coding schemes include binary phase-shift keying (BPSK), quadrature phase-shift keying (QPSK), quadrature amplitude modulation (QAM), 8-QAM, 64-QAM, as well as other modulation and coding schemes identifiable to a person skilled in the art.
  • BPSK binary phase-shift keying
  • QPSK quadrature phase-shift keying
  • QAM quadrature amplitude modulation
  • 8-QAM 8-QAM
  • 64-QAM 64-QAM
  • channel and band are used interchangeably and can refer to a frequency range. More in particular, the terms “channel” and “band” as used herein refers to a frequency range that can be defined by a wireless standard such as, but not limited to, wideband code division multiple access (WCDMA) and long term evolution (LTE).
  • WCDMA wideband code division multiple access
  • LTE long term evolution
  • a more integrated RF front-end where one or more components are adjustable can be reduced in size and complexity compared to a discrete RF front-end with multiple elements that can be switched between in order to accommodate different modes and different bands.
  • One component that can enable such integration is an amplifier that can be dynamically adjusted during operation of a cellular phone or wireless device that comprises the adjustable amplifier.
  • An RF front-end comprising such an adjustable amplifier could not need to switch between multiple fixed amplifiers (e.g. as in many RF front-ends currently available), but could rather use a smaller number of (or even one of) the adjustable amplifiers to achieve desired performance characteristics (e.g. linearity, data throughput, multimode multiband operation, and so on).
  • a received RF signal by the antenna ( 140 ) can be passed through the antenna switch ( 130 ) which connects the antenna to one of the plurality of transmit/receive paths, a duplexer unit (D 1 -D 7 ) which can reject frequency bands outside a desired frequency band (e.g. reject a transmit signal band), and then fed to the transceiver unit ( 110 ) for further processing.
  • An input component of the transceiver unit ( 110 ) for a receive path can comprise an adjustable low noise amplifier (LNA) (Rx 1 -Rx 7 ) designed to amplify a received RF signal in a specified receive frequency band.
  • LNA adjustable low noise amplifier
  • the transceiver unit ( 110 ) can further down convert the received amplified signal to an intermediate frequency (IF) signal used for decoding of the information (e.g. voice, data) in the received RF signal.
  • IF intermediate frequency
  • RF 1 can comprise a power amplifier (PA 5 -PA 6 ), a low pass filter (F 5 -F 6 ) designed to limit the high frequency content of the amplified RF signal, the antenna switch ( 130 ) which connects the LB transmit path to the common antenna ( 140 ) for final transmission of the RF signal to the air.
  • PA 5 -PA 6 power amplifier
  • F 5 -F 6 low pass filter
  • the RF front-end stage ( 100 ) of FIG. 1 comprises four power amplifiers (PA 1 -PA 4 ), it comprises seven different transmit paths, six of which share a same power amplifier (PA 1 -PA 3 ) and a same filter (F 1 -F 3 ).
  • a switch (SW 1 -SW 3 ) can be used to select a duplexer fit to the corresponding transmission mode and/or frequency band.
  • PA 1 can be used for transmission of a specific mode and covering two distinct channels (e.g.
  • switch SW 1 routes the RF signal to be transmitted to duplexer D 1 while the PA 1 is adjusted for the specific mode and (first) channel of operation (e.g. via controls sent by transceiver unit ( 110 ).
  • switch SW 1 routes the RF signal to be transmitted to duplexer D 2 while the PA 2 is configured (e.g. adjusted) to operate in the specific mode and (second) channel.
  • the various configurable elements of the RF front-end stage ( 100 ) can be controlled via associated controlling signals by an RF signal-aware processor, such as, for example, the transceiver unit ( 110 ), and according to a desired mode of operation (e.g. transmit, receive), a desired signal mode (e.g. GMSK, EDGE, WCDMA, etc.) and a desired channel (e.g. frequency band). More information on controlling a configuration of a power amplifier according to desired operation characteristics (e.g.
  • FIG. 2A shows a configuration of the RF front-end stage ( 100 ) of FIG. 1 for a specific simultaneous activation of a transmit path and a receive path.
  • the receive path of FIG. 2A comprises the amplifier T 1 of the transceiver unit ( 110 ), the filter F 1 , the power amplifier PA 1 , the switch SW 1 , a transmit filter of the duplexer D 1 , the antenna switch ( 130 ) and the antenna ( 140 ).
  • the power amplifier PA 1 can be a module comprising one or more power amplifiers, such as, for example, a driver ( 250 ) and a final ( 260 ).
  • one or more power amplifiers of the power amplifier module PA 1 can be a scalable periphery amplifier, such as described, for example, in U.S. patent application Ser. No. 13/797,779.
  • tunable match elements can be coupled to an input and/or output of the one or more power amplifiers such as to provide further tuning capability of the design with respect to various operating parameters, such as described in, for example, U.S. patent application Ser. No. 13/797,779, U.S. patent application Ser. No. 13/967,866 and U.S. patent application Ser. No. 13/797,686.
  • the one or more power amplifiers can comprise envelope tracking amplifiers such as to provide a wider flexibility in operation with respect to, for example, linearity and output power of the amplifier, and as described in, for example, U.S. patent application Ser. No. 13/829,946 and U.S. patent application Ser. No. 13/830,555.
  • FIG. 2B shows a power amplifier module PA 1 which can be used in a transmit path of the RF front-end stage ( 100 ) of FIG. 1 and comprising the various embodiments described in the previous section.
  • amplifiers ( 250 , 260 ) can be envelope tracking (ET) amplifiers ( 250 , 260 ) and can be biased via an envelope tracking power supply (not shown in the figure) under control of an envelope tracking control signal which can be generated by an RF signal-aware processor, such as, for example, the transceiver unit ( 110 ).
  • the power amplifier module PA 1 can comprise tunable matching elements ( 270 , 280 , 290 ) coupled to the respective input and output of constituent amplifiers ( 250 , 260 ).
  • transceiver units such as transceiver unit ( 110 ) depicted in FIG.
  • the subject of the present disclosure is to provide means (e.g. methods and devices) to calibrate an RF transmit path during operation of the RF front-end stage without violating the various regulations governing unintentional RF transmission powers.
  • a switchable load impedance (e.g. a switchable dummy load) is provided to a transmission path of the RF front-end stage ( 100 ) as depicted in FIG. 3A .
  • the switchable impedance RL ( 330 ) is provided through a switch ( 320 ) which can provide an additional (e.g. alternate) termination path to the RF signal prior to the duplexer unit ( 210 ).
  • the switch can terminate the RF transmit path at the impedance RL ( 330 ) and can decouple (e.g.
  • a signal coupling device ( 310 ) inserted in the transmit path right before the switch ( 320 ), can be used to monitor (e.g. during a calibration phase) a fraction of the RF signal at that point ( 340 ) in the transmit path, the fraction being representative of the full scale RF signal at the same point of the transmit path.
  • the RF signal detected by the signal coupling device ( 310 ) can be provided via a monitor terminal ( 340 ) for subsequent measuring by, for example, dedicated measurement circuitry or even the transceiver unit ( 110 ).
  • a calibration phase e.g.
  • characteristics of the monitored RF signal can be used to further adjust components within the RF transmit path, such as, for example, a configurable power amplifier (e.g. PA 1 ) and/or associated tunable match components as depicted in FIG. 2B , and as a consequence align/calibrate the transmit path to obtain an RF signal with the desired characteristic at the monitoring point.
  • a configurable power amplifier e.g. PA 1
  • associated tunable match components as depicted in FIG. 2B
  • the signal coupling device ( 310 ) can be a directional coupler which functions by sending a fractional portion of an input power (coupling factor, for example 15-25 dB lower than a main input power) to a first coupled port, and can also send a fractional part of a reflected power to a second coupled port.
  • the coupled power e.g. at first/second coupled port
  • a detector such as, for example, a diode detector, which detects the peak voltages associated with the detected powers.
  • a directional coupler e.g. coupled line coupler or a broadside coupler.
  • a simple capacitive tap can be used for signal coupling, although such tap does not provide the benefit of directivity and therefore cannot separate a forward signal from a reflected signal.
  • the switch ( 320 ) allows coupling of the RF signal to the antenna ( 140 ) via the antenna switch ( 130 ).
  • the switch ( 320 ) provides a level of isolation of the RF signal with respect to the antenna switch ( 130 ). This means that a small residual RF signal can be present at an input terminal (e.g. S 1 ) of the antenna switch ( 130 ) which can be provided to the antenna for transmission to the air.
  • added isolation of the RF signal to the antenna ( 140 ) can be provided, during a calibration phase of the transmit path as depicted in FIG. 3A , by disconnecting, via the antenna switch ( 130 ), connection to the transmit path being calibrated. This is depicted in FIG.
  • the switch ( 320 ) can provide an isolation equal to or greater than about 25 dB, and the combined isolation provided by the antenna switch ( 130 ) and the switch ( 320 ) can be equal to or greater than about 57 dB.
  • an isolation can be defined by an attenuation, in dB, between an RF signal power level at a common terminal of the switch, and an RF power level at a switching terminal of the switch, when the switching terminal is not connected via the switch to the common terminal.
  • Such calibration scheme as provided by the embodiments depicted in FIGS. 3A and 3B and described in the previous sections of the present disclosure, can allow to feed various calibration RF signals (e.g. patterns) to an RF transmit path, at various levels of powers, as required by a calibration routine run during the calibration phase, with minimum transmitted RF power at the antenna ( 140 ), such as not to violate the various regulations governing unintentional RF transmission powers.
  • Such calibration routine and associated calibration RF signals can be provided, for example, by the transceiver unit ( 110 ) or other dedicated signal processor.
  • a switchable load impedance whose function can be provided by a combination of a switch (e.g. 320 ) and a terminating impedance (e.g. resistor 330 ), and the signal coupling device (e.g. 310 ), can be inserted at any point of the various transmit paths of the RF front-end stage ( 100 ) of FIG. 1 .
  • such combination can be inserted after an adjusting element ( 360 ) of a transmission path, such as to allow performing some adjustment of the RF signal as being monitored.
  • the adjusting element ( 360 ) can be a power amplifier (PA 1 -PA 6 ), a filter (F 1 -F 6 ), or a duplexer (D 1 -D 7 ), all of which are readily available elements of the RF front-end stage ( 100 ) depicted in FIG. 1 .
  • such elements can be made adjustable.
  • filters can be made adjustable by using adjustable reactive components, such as, for example, digitally tunable capacitors and digitally tunable inductors as described in the International Application No. PCT/US2009/001358 and in the U.S. patent application Ser. No. 13/595,893, some implementation of which are described in, for example, the U.S.
  • a power amplifier can be made adjustable by using, for example, the previously discussed configuration provided in FIG. 2B , or a scalable periphery amplifier with optional tunable matching elements coupled to its input and/or output, as described in, for example, U.S. patent application Ser. No. 13/797,779, U.S. patent application Ser. No. 14/042,312, U.S. patent application Ser. No. 13/967,866 and U.S. patent application Ser. No. 13/797,686.
  • 3D can be any of the adjusting components of the power amplifier, such as, for example, any of ( 250 , 260 , 270 , 280 and 290 ) of FIG. 2B .
  • several combination switchable load impedances ( 310 , 320 ) can be inserted each following one of the adjustable elements ( 250 , 260 , 270 , 280 and 290 ) of the configuration depicted in FIG. 2B , such as depicted in FIG. 3E .
  • FIG. 3E In the exemplary embodiment according to the present disclosure as depicted in FIG.
  • each of the switchable load impedances ( 370 ) can be used to terminate the transmit path at a point of the switchable load and allow to monitor via an associated RF coupling device ( 310 ) the terminated RF signal at that point. Furthermore, adjustments to an adjustable element ( 360 ) of the transmit path (e.g. placed prior to the switch 370 and the coupling device 310 ) by a controller can allow to calibrate the transmit path up to the point of termination provided by the switchable load. As such, calibration of the transmit path at various points of the transmit path is provided via the plurality of the switchable load impedances.
  • FIG. 4A depicts a configuration wherein the switchable load impedance (e.g. 420 and 330 ) is provided after the antenna switch ( 130 ).
  • the switchable load impedance is provided in a portion of the transmission path common to all the transmit paths of the RF front-end ( 100 ).
  • This configuration allows to calibrate all transmit paths in their entirety (e.g. except the actual antenna load) using a same switchable load impedance ( 420 , 330 ) and a signal coupling device ( 310 ). For example, to calibrate an RF transmit path using the configuration depicted in FIG.
  • the switching load ( 330 ) can be first inserted into the common transmit path and consequently isolating the antenna from the transmit path, then activating a transmit path to be calibrated via the various controlling elements as depicted in the RF front-end stage of FIG. 1 , such as the various switches and power amplifiers, and finally performing the calibration of the selected transmit path by feeding various calibration signals to the activated transmit path and adjusting the various adjustable elements of the selected transmit path using the feedback provided by the monitoring RF signal (e.g. at terminal 440 ) provided by the RF signal coupling device ( 310 ).
  • the monitoring RF signal e.g. at terminal 440
  • the RF signal coupling device ( 310 ) In order to allow calibration of all transmit paths of the RF front-end stage ( 100 ) using the configuration depicted in FIG. 3B , a same switchable load impedance ( 320 , 330 ) and signal coupling device ( 310 ) must be provided for each of the transmit paths.
  • the embodiment according to the present disclosure as depicted in FIG. 4A can minimize the number of switchable impedance loads ( 420 , 330 ) and signal coupling devices ( 310 ) required to calibrate the various transmit paths of the RF front-end stage ( 100 ) of FIG. 1 . It can also allow for a higher precision of calibration, as the calibration is performed on the RF signal right at the antenna ( 140 ), as opposed to an RF signal at a point further away from the antenna ( 140 ), as measured, for example, by number of active and passive elements of the transmission path between the antenna and the calibration point.
  • the configuration according to the present disclosure and as depicted in FIG. 4A includes the duplexer ( 210 ) and antenna switch ( 130 ) as part of a calibration and tuning adjustment based on a signal provided at terminal ( 440 ).
  • isolation of the calibration RF signal into the antenna ( 140 ) can be further increased by adding more switches between the antenna and the switchable load impedance.
  • a single switch ( 420 ) provides the isolation between the RF calibration signal into the terminating load ( 330 ) and the antenna ( 140 ). Further isolation can be provided by inserting another switch between the antenna ( 140 ) and the terminating load ( 330 ) as depicted in FIG. 4B .
  • the RF signal coupling device ( 310 ) can affect an amplitude of the RF signal being transmitted, it may be desirable not to have the coupling device as integral part of the transmit path. It follows that according to an embodiment of the present disclosure, the RF signal coupling device ( 310 ) can be switched into the transmit path only during a calibration phase, such as depicted in FIG. 5 . In the embodiment according to the present disclosure depicted in FIG. 5 , the RF signal coupling device ( 310 ) is switched into the transmit path at the same time as the terminating load ( 330 ) via the switch ( 420 ).
  • FIG. 6A shows an equivalent AC signal circuit of a transmit path of the RF front-end stage ( 100 ), comprising an AC voltage source ( 610 ) which provides a signal to a load impedance ( 620 ) over a transmit path ( 605 ) of nominal impedance (e.g. same value as the load impedance).
  • the load impedance can represent the antenna ( 140 ) of the RF front-end stage ( 100 ), the voltage source can be the equivalent circuital representation of a power amplifier module (PA 1 -PA 7 ) of the RF front-end stage ( 100 ), and the transmit path can represent the combination of all other components in the path.
  • PA 1 -PA 7 power amplifier module
  • PA 1 -PA 7 power amplifier module
  • the transmit path can represent the combination of all other components in the path.
  • the skilled person will know that providing a branch of impedance ( 630 ) sufficiently higher than the nominal transmit path impedance (e.g. >1K Ohms) can have a negligible impact on the RF signal integrity at the load ( 620 ) (e.g. antenna) of the transmit path depicted in FIG. 6A , while providing a sample of the RF signal at the end of the branch (e.g. terminal 640 ).
  • FIG. 6B depicts an RF signal monitoring scheme according to an embodiment of the present disclosure which can be used during an active transmission phase of the RF front-end stage with minimal impact on the integrity of the transmitted RF signal.
  • the RF signal sampled by the sampling resistor ( 630 ) and provided at the terminal ( 640 ) can be monitored during a transmission phase and adjustments to the various adjustable elements in a corresponding active transmit path can be made accordingly, as discussed in prior sections.
  • the switch ( 420 ) can be provided to decouple, if needed, the sampling resistor ( 630 ) from the transmit path.
  • the switch ( 420 ) and/or the sampling resistor ( 630 ) can be monolithically integrated with the antenna switch ( 130 ), as depicted by module ( 650 ) of FIG. 6C .
  • the switching impedance load ( 330 ) can present a 50 ⁇ impedance, which is a common standard in RF circuit design.
  • any switch or switching circuitry of the present disclosure such as switches ( 130 , 320 , 420 , 420 a ) shown in the various figures of the present disclosure can be implemented using transistors, stacked transistors (FETs), diodes, or any other devices or techniques known to or which can be envisioned by a person skilled in the art.
  • FETs stacked transistors
  • switching circuitry can be constructed using CMOS technology and various architectures known to the skilled person, such as, for example, architecture presented in U.S. Pat. No. 7,910,993, issued on Mar.
  • FIG. 7 shows an exemplary embodiment of a single-pole single-throw switch with stacked transistors, which the skilled person can use as an elementary component of the various switches used in the various embodiments according to the present disclosure.
  • FETs e.g. MOSFETs
  • MOSFETs transistor and stacked transistor switches used in the various embodiments of the present disclosure
  • P-type or N-type MOSFETs may be used.
  • BJTs bipolar junction transistors
  • a person skilled in the art will also appreciate the advantage of stacking more than two transistors, such as three, four, five or more, provide on the voltage handling performance of the switch.
  • the various switches used in the various embodiments of the present disclosure can be constructed using CMOS, silicon germanium (SiGe), gallium arsenide (GaAs), gallium nitride (GaN), bipolar transistors, or any other viable semiconductor technology and architecture known, including micro-electro-mechanical (MEM) modules. Additionally, different device sizes and types can be used within a stacked transistor switch such as to accommodate various current handling capabilities of the switch.
  • a switch configured to terminate a transmit path at a calibration point with a load equivalent to what the transmit path sees at the calibration point during normal operation (e.g. RF signal transmission), is inserted at the calibration point of the transmit path of an RF front-end stage.
  • the switch is coupled to the terminating load, and the terminating load may be external to the switch or internal (e.g. monolithically integrated with the switch), as depicted by the various figures of the present disclosure.
  • a configuration with an external terminating load to the switch can provide the flexibility of easier power handing as larger size resistors can be used for enhanced power dissipation.
  • the terminating load of the switchable impedance load can be monolithically integrated with the switch, such as to provide a more compact profile of the assembly.
  • FIG. 3D Such monolithic integration of the switch and the terminating load is depicted in FIG. 3D , wherein the switchable impedance load module ( 370 ) comprises the switch ( 320 ) and the terminating load ( 330 ).
  • the RF signal coupling device ( 310 ) may also be monolithically integrated within the module ( 370 ).
  • the skilled person knows of various circuitries adapted to function as the RF signal coupling device, such as, for example, a directional coupler or a capacitive coupler.
  • the switchable impedance load can be monolithically integrated within a power amplifier, such as, for example, a power amplifier (SP 1 , . . . , SP 6 ) of the RF front-end stage ( 100 ) of FIG. 1 .
  • a power amplifier such as, for example, a power amplifier (SP 1 , . . . , SP 6 ) of the RF front-end stage ( 100 ) of FIG. 1 .
  • FIG. 3F depicts such embodiment according to the present disclosure, wherein the RF signal coupling device ( 310 ), the switch ( 320 ) and the terminating load impedance ( 330 ) are monolithically integrated in a power amplifier module ( 390 ), which further comprises power amplifier stages ( 250 ) and ( 260 ).
  • the terminating load ( 330 ) of the amplifier module ( 390 ) can be provided external to the amplifier module ( 390 ), such as to provide more flexibility in size (e.g. power dissipation) of the terminating load ( 330 ).
  • the antenna switch ( 130 ) of the RF front-end stage ( 110 ) and the switchable impedance load ( 420 , 330 ) can be monolithically integrated, as depicted by module ( 470 ) of FIG. 4B .
  • the RF signal coupling device is placed in front of the antenna switch ( 130 ), and thus the monitor signal detected at terminal ( 440 ) of FIG. 4C does not include an effect of the switch ( 130 ) on the transmit path terminated at the switched load ( 330 ).
  • a further exemplary embodiment of the present disclosure can comprise the RF signal coupling device ( 310 ) monolithically integrated within the antenna switch ( 130 ), as depicted by module ( 480 ) of FIG. 4D .

Abstract

Methods and devices are described for calibrating RF transmit paths of an RF front-end stage with minimum transmitted RF power at an output port of the RF front-end stage. Furthermore, an integrated RF switch with a terminating switchable load is presented which can be used to terminate a transmit path at the point of termination for measuring an RF signal at that point.

Description

    CROSS REFERENCE TO RELATED APPLICATIONS
  • The present application is related to U.S. patent application Ser. No. ______ entitled “Mismatch Detection Using Replica Circuit” (Attorney Docket No. PER-068-PAP) filed on even date herewith and incorporated herein by reference in its entirety.
  • The present application may be related to U.S. Pat. No. 6,804,502, issued on Oct. 12, 2004 and entitled “Switch Circuit and Method of Switching Radio Frequency Signals”, the disclosure of which is incorporated herein by reference in its entirety. The present application may also be related to U.S. Pat. No. 7,910,993, issued on Mar. 22, 2011 and entitled “Method and Apparatus for use in Improving Linearity of MOSFET' s using an Accumulated Charge Sink”, the disclosure of which is incorporated herein by reference in its entirety. The present application may also be related to U.S. patent application Ser. No. 13/797,779 entitled “Scalable Periphery Tunable Matching Power Amplifier”, filed on Mar. 12, 2013, the disclosure of which is incorporated herein by reference in its entirety. The present application may also be related to International Application No. PCT/US2009/001358, entitled “Method and Apparatus for use in digitally tuning a capacitor in an integrated circuit device”, filed on Mar. 2, 2009, the disclosure of which is incorporated herein by reference in its entirety. The present application may also be related to U.S. patent application Ser. No. 13/595,893, entitled “Methods and Apparatuses for Use in Tuning Reactance in a Circuit Device”, filed on Aug. 27, 2012, the disclosure of which is incorporated herein by reference in its entirety. The present application may also be related to U.S. patent application Ser. No. 14/042,312, filed on Sep. 30, 2013, entitled “Methods and Devices for Impedance Matching in Power Amplifier Circuits”, the disclosure of which is incorporated herein by reference in its entirety. The present application may also be related to U.S. Pat. No. 7,248,120, issued on Jul. 24, 2007, entitled “Stacked Transistor Method and Apparatus”, the disclosure of which is incorporated herein by reference in its entirety. The present application may also be related to U.S. patent application Ser. No. 13/828,121, filed on Mar. 14, 2013, entitled “Systems and Methods for Optimizing Amplifier Operations”, the disclosure of which is incorporated herein by reference in its entirety. The present application may also be related to U.S. patent application Ser. No. 13/967,866 entitled “Tunable Impedance Matching Network”, filed on Aug. 15, 2013, the disclosure of which is incorporated herein by reference in its entirety. The present application may also be related to U.S. patent application Ser. No. 13/797,686 entitled “Variable Impedance Match and Variable Harmonic Terminations for Different Modes and Frequency Bands”, filed on Mar. 12, 2013, the disclosure of which is incorporated herein by reference in its entirety. The present application may also be related to U.S. patent application Ser. No. 14/042,331 entitled “Methods and Devices for Thermal Control in Power Amplifier Circuits”, filed on Sep. 30, 2013, the disclosure of which is incorporated herein by reference in its entirety. The present application may also be related to U.S. patent application Ser. No. 13/829,946 entitled “Amplifier Dynamic Bias Adjustment for Envelope Tracking, filed on Mar. 14, 2013, the disclosure of which is incorporated herein by reference in its entirety. The present application may also be related to U.S. patent application Ser. No. 13/830,555 entitled “Control Systems and Methods for Power Amplifiers Operating in Envelope Tracking Mode”, filed on Mar. 14, 2013, the disclosure of which is incorporated herein in its entirety.
  • BACKGROUND
  • 1. Field
  • The present teachings relate to RF (radio frequency) circuits. More particularly, the present teachings relate to methods and apparatuses for calibration of an RF transmit path via on-chip dummy load.
  • 2. Description of Related Art
  • RF devices, such as cell phone transmitters, are becoming increasingly complex due to additional frequency bands, more complex modulation schemes, higher modulation bandwidths, and the introduction of efficiency improvement schemes such as envelope tracking. The transmitter lineup in a transceiver commonly employs calibration techniques to improve modulator performance, remove DC offsets, calibrate power levels, and so on. This is done at phone power up, and even periodically to remove temperature and frequency variations.
  • However, the full transmit path, through an associated power amplifier (PA) and even through associated filters and antenna switch(es), is usually calibrated only in an RF device production test environment, then not ever again. This is because due to local regulations, a transmitter cannot perform the task of transmitting over the air without a channel being assigned to the transmission, a task which is required for calibration of the transmit path. New transceivers are implementing a full receive path to monitor the PA output so it can make updates to track out performance shifts due to frequency, temperature, and battery voltage variations. This receive path requires the RF device (e.g. cell phone) to be in a call to carry out the closed loop updates, however, the transmission quality must meet system requirements before the closed loop corrections can be implemented.
  • SUMMARY
  • According to a first aspect of the present disclosure, a radio frequency (RF) circuital arrangement is presented, wherein the RF circuital arrangement is configured to transmit an RF signal at an output RF transmit port via one or more RF transmit paths, wherein a transmit path of the one or more transmit RF paths comprises: one or more adjustable RF devices configured during operation to affect one or more characteristics of the RF signal; and a terminating switch positioned between an adjustable RF device of the one or more adjustable RF devices and the output RF transmit port, wherein: during a first mode of operation of the RF transmit path, the terminating switch is configured to couple the RF signal to the output RF transmit port, and during a second mode of operation of the RF transmit path, the terminating switch is configured to isolate the RF signal from the output RF transmit port and terminate the RF signal into a terminating load connected to a terminating terminal of the terminating switch.
  • According to a second aspect of the present disclosure, a radio frequency (RF) circuital arrangement is presented, wherein the RF circuital arrangement is configured to transmit an RF signal at an output RF transmit port, the RF circuital arrangement comprising: an output switch comprising a plurality of switching terminals and a common terminal, wherein the common terminal is operatively coupled to the output RF transmit port; a plurality of RF transmit paths comprising one or more adjustable RF devices and configured, during operation, to transmit the RF signal, wherein the plurality of RF transmit paths are coupled to the plurality of switching terminals; and a terminating switch positioned between an adjustable RF device of the one or more adjustable RF devices and the output RF transmit port, wherein: during a first mode of operation of the RF circuital arrangement, the terminating switch is configured to couple the RF signal to the output RF transmit port, and during a second mode of operation of the RF circuital arrangement, the terminating switch is configured to isolate the RF signal from the output RF transmit port and terminate the RF signal into a terminating load connected to a terminating terminal of the terminating switch.
  • According to a third aspect of the present disclosure, a monolithically integrated radio frequency (RF) circuit is presented, wherein the RF circuit comprises: an RF switch comprising a common terminal and a plurality of switching terminals, wherein during operation the switch is adapted to connect a selected switching terminal of the plurality of switching terminals to the common terminal, and a resistor connected via a first terminal of the resistor, to a terminating switching terminal of the plurality of switching terminals, wherein the RF switch and the resistor are monolithically integrated on a same integrated circuit.
  • According to a fourth aspect of the present disclosure, a method for calibrating a transmit path of a radio frequency (RF) front-end stage is presented, the method comprising: providing a switchable load impedance in a transmit path; during a calibration of the transmit path, terminating the transmit path at the switchable load impedance; based on the terminating, reducing an output RF signal power at an output antenna of the transmit path; based on the terminating, measuring an RF signal characteristic at the switchable load impedance; based on the measuring, adjusting an adjustable RF device of the transmit path, and based on the adjusting, calibrating the transmit path, wherein the reducing provides an output RF signal power at the output antenna of the transmit path lower than a desired RF transmission power.
  • According to a fifth aspect of the present disclosure, a method for calibrating a transmit path of a radio frequency (RF) front-end stage is presented, the method comprising: providing an RF front-end stage comprising one or more transmit paths, wherein each transmit path of the one or more transmit paths is adapted to be connected to a transmit port via an output RF switch; providing one or more RF switches, wherein an RF switch of the one or more RF switches is adapted to provide a series connection between two RF components of a transmit path of the plurality of transmit paths via a common terminal of the RF switch and a first switching terminal of the RF switch; selecting a transmit path of the plurality of transmit paths for transmission of an RF signal at the transmit port; configuring the output switch to connect the selected transmit path to the output port; configuring at least a subset of the one or more RF switches to provide series connections between two RF components of the selected transmit path; providing the RF signal to the selected transmit path; transmitting the RF signal based on the providing of the RF signal; calibrating the selected transmit path by performing the following steps: configuring an RF switch of the one or more RF switches to disable a series connection between two RF components of the selected transmit path, based on the configuring, terminating the selected transmit path at a resistor load connected to a second switching terminal of the RF switch, sensing an RF signal at the resistor load, based on the sensing, adjusting an adjustable RF component of the selected transmit path, and configuring the RF switch of the one or more RF switches to provide series connection between the two RF components of the transmit path; and based on the calibrating, obtaining a desired signal characteristic of the transmitted RF signal.
  • BRIEF DESCRIPTION OF DRAWINGS
  • The accompanying drawings, which are incorporated into and constitute a part of this specification, illustrate one or more embodiments of the present disclosure and, together with the description of example embodiments, serve to explain the principles and implementations of the disclosure.
  • FIG. 1 shows a block diagram of a multi-band and multi-channel RF front-end stage of an RF device, as used, for example, in a cellular phone. The RF stage comprises transmit and receive paths for high frequency bands and low frequency bands.
  • FIG. 2A shows a transmit path and a receive path of the RF stage depicted in FIG. 1.
  • FIG. 2B shows a configurable power amplifier module.
  • FIG. 3A and FIG. 3B show exemplary embodiments according to the present disclosure of a switchable dummy load in a transmit path which can be used to monitor an RF signal in the transmit path during a calibration step. The switchable dummy load of FIG. 3A is positioned prior to an antenna switch of the RF stage.
  • FIG. 3C shows a relative position according to an embodiment of the present disclosure of a switchable dummy load within a transmit path of the RF front-end stage of FIG. 1.
  • FIG. 3D shows a monolithically integrated switchable dummy load according to an embodiment of the present disclosure.
  • FIG. 3E shows an exemplary embodiment according to the present disclosure of a plurality of dummy loads in a transmit path which can each be used to monitor an RF signal in the transmit path during a calibration step. Each switchable dummy load is positioned after an adjustable RF component of the transmit path.
  • FIG. 3F shows a monolithically integrated power amplifier module comprising an integrated switchable dummy load.
  • FIG. 4A shows an exemplary embodiment according to the present disclosure of a switchable dummy load in a transmit path which can be used to monitor the RF signal in the transmit path during a calibration step. The switchable dummy load of FIG. 4A is positioned after the antenna switch of the RF stage.
  • FIG. 4B shows the embodiment of FIG. 4A with an added switch for a higher signal isolation with respect to an antenna.
  • FIG. 4C and FIG. 4D show a monolithically integrated antenna switch with built-in switchable dummy load according to an embodiment of the present disclosure.
  • FIG. 5 shows an exemplary embodiment according to the present disclosure of a switchable dummy load in a transmit path which can be used to monitor the RF signal in the transmit path during a calibration step. The switchable dummy load of FIG. 5 is positioned after the antenna switch of the RF stage. In the exemplary embodiment depicted in FIG. 5, a signal coupler, used to monitor the RF signal, switches in and out of the transmit path together with the dummy load.
  • FIG. 6A shows an equivalent AC signal circuit of a transmit path of the RF front-end stage of FIG. 1.
  • FIG. 6B shows an exemplary embodiment according to the present disclosure of a switchable monitor impedance which can be used to monitor a transmitted RF signal in a transmit path while transmitting.
  • FIG. 6C shows a monolithically integrated antenna switch with built-in switchable monitor impedance of FIG. 6B.
  • FIG. 7 shows an exemplary embodiment according to the present disclosure of a switch with stacked transistors.
  • DETAILED DESCRIPTION
  • Throughout this description, embodiments and variations are described for the purpose of illustrating uses and implementations of the inventive concept. The illustrative description should be understood as presenting examples of the inventive concept, rather than as limiting the scope of the concept as disclosed herein.
  • As used in the present disclosure, the terms “switch ON” and “activate” may be used interchangeably and can refer to making a particular circuit element electronically operational. As used in the present disclosure, the terms “switch OFF” and “deactivate” may be used interchangeably and can refer to making a particular circuit element electronically non-operational. As used in the present disclosure, the terms “amplifier” and “power amplifier” may be used interchangeably and can refer to a device that is configured to amplify a signal input to the device to produce an output signal of greater magnitude than the magnitude of the input signal.
  • The present disclosure describes electrical circuits in electronics devices (e.g., cell phones, radios) having a plurality of devices, such as for example, transistors (e.g., MOSFETs). Persons skilled in the art will appreciate that such electrical circuits comprising transistors can be arranged as amplifiers. As described in a previous disclosure (U.S. patent application Ser. No. 13/797,779), a plurality of such amplifiers can be arranged in a so-called “scalable periphery” (SP) architecture of amplifiers where a total number (e.g., 64) of amplifier segments are provided. Depending on the specific requirements of an application, the number of active devices (e.g., 64, 32, etc.), or a portion of the total number of amplifiers (e.g. 1/64, 2/64, 40% of 64, etc.), can be changed for each application. For example, in some instances, the electronic device may desire to output a certain amount of power, which in turn, may require 32 of 64 SP amplifier segments to be used. In yet another application of the electronic device, a lower amount of output power may be desired, in which case, for example, only 16 of 64 SP amplifier segments are used. According to some embodiments, the number of amplifier segments used can be inferred by a nominal desired output power as a function of the maximum output power (e.g. when all the segments are activated). For example, if 30% of the maximum output power is desired, then a portion of the total amplifier segments corresponding to 30% of the total number of segments can be enabled. The scalable periphery amplifier devices can be connected to corresponding impedance matching circuits. The number of amplifier segments of the scalable periphery amplifier device that are turned on or turned off at a given moment can be according to a modulation applied to an input RF signal, a desired output power, a desired linearity requirement of the amplifier or any number of other requirements.
  • The term “amplifier” as used in the present disclosure is intended to refer to amplifiers comprising single or stacked transistors configured as amplifiers, and can be used interchangeably with the term “power amplifier (PA)”. Such terms can refer to a device that is configured to amplify a signal input to the device to produce an output signal of greater magnitude than the magnitude of the input signal. Stacked transistor amplifiers are described for example in U.S. Pat. No. 7,248,120, issued on Jul. 24, 2007, entitled “Stacked Transistor Method and Apparatus”, the disclosure of which is incorporated herein by reference in its entirety. Such amplifier and power amplifiers can be applicable to amplifiers and power amplifiers of any stages (e.g., pre-driver, driver, final), known to those skilled in the art.
  • As used in the present disclosure, the term “mode” can refer to a wireless standard and its attendant modulation and coding scheme or schemes. As different modes may require different modulation schemes, these may affect required channel bandwidth as well as affect the peak-to-average-ratio (PAR), also referred to as peak-to-average-power-ratio (PAPR), as well as other parameters known to the skilled person. Examples of wireless standards include Global System for Mobile Communications (GSM), code division multiple access (CDMA), Worldwide Interoperability for Microwave Access (WiMAX), Long Term Evolution (LTE), as well as other wireless standards identifiable to a person skilled in the art. Examples of modulation and coding schemes include binary phase-shift keying (BPSK), quadrature phase-shift keying (QPSK), quadrature amplitude modulation (QAM), 8-QAM, 64-QAM, as well as other modulation and coding schemes identifiable to a person skilled in the art.
  • As used in the present disclosure, the terms “channel” and “band” are used interchangeably and can refer to a frequency range. More in particular, the terms “channel” and “band” as used herein refers to a frequency range that can be defined by a wireless standard such as, but not limited to, wideband code division multiple access (WCDMA) and long term evolution (LTE).
  • A more integrated RF front-end where one or more components are adjustable can be reduced in size and complexity compared to a discrete RF front-end with multiple elements that can be switched between in order to accommodate different modes and different bands. One component that can enable such integration is an amplifier that can be dynamically adjusted during operation of a cellular phone or wireless device that comprises the adjustable amplifier. An RF front-end comprising such an adjustable amplifier could not need to switch between multiple fixed amplifiers (e.g. as in many RF front-ends currently available), but could rather use a smaller number of (or even one of) the adjustable amplifiers to achieve desired performance characteristics (e.g. linearity, data throughput, multimode multiband operation, and so on). A scalable periphery tunable matching amplifier (SPTM) amplifier can serve as an adjustable amplifier. An SPTM amplifier can be adjusted during operation for different output power levels and other characteristics (e.g. different output impedances, different frequencies of operation, and so forth). Additionally, an SPTM can be adjusted to compensate for manufacturing/production tolerances of related components, such as to provide uniform performance across all production samples. An SPTM amplifier can comprise a scalable periphery amplifier whose output is connected to a tunable impedance matching network.
  • FIG. 1 shows a block diagram of an RF front-end stage (100) which can be used for RF transmission and reception of multiple modes and multiple frequency bands signals via a common antenna (140). In the RF front-end stage (100) of FIG. 1, a plurality of transmit and receive paths are used to transmit and receive the RF signals of the multiple modes and multiple frequency bands. An antenna switch (130) is used to switch an RF signal to be transmitted by a transmit path to the antenna, or to switch a received RF signal by the antenna to a receive path for further processing by a transceiver unit (110). In a receive mode, a received RF signal by the antenna (140) can be passed through the antenna switch (130) which connects the antenna to one of the plurality of transmit/receive paths, a duplexer unit (D1-D7) which can reject frequency bands outside a desired frequency band (e.g. reject a transmit signal band), and then fed to the transceiver unit (110) for further processing. An input component of the transceiver unit (110) for a receive path can comprise an adjustable low noise amplifier (LNA) (Rx1-Rx7) designed to amplify a received RF signal in a specified receive frequency band. Once the received signal is amplified, the transceiver unit (110) can further down convert the received amplified signal to an intermediate frequency (IF) signal used for decoding of the information (e.g. voice, data) in the received RF signal.
  • During a transmit mode of the RF front-end stage (100) of FIG. 1, an RF signal generated by the transceiver unit (110) and amplified (e.g. buffered) by a corresponding output stage amplifier (T1-T7) can be passed through a high band (HB) transmit path or a low band (LB) transmit path. The HB transmit path can comprise a filter (F1-F4) designed to reject frequency bands outside a desired frequency band, a power amplifier (PA1-PA4) designed to amplify the RF signal within a desired frequency band, a duplexer unit (D1-D7) which can reject frequency bands outside a desired frequency band (e.g. reject a receive signal band), the antenna switch (130) which connects the HB transmit/receive path to the antenna (140) for final transmission of the RF signal to the air. The HB transmit path can be used for transmission of higher frequency RF signals, such as used in, for example, saturated GMSK mode and linear EDGE and linear WCDMA modes, where various RF frequency ranges from 1.70 GHz to 2.10 GHz are used. For transmission of lower frequency signals (e.g. 700-900 MHz), such as used in, for example, GSM and some 3G bands, the LB transmit path can be used. The LB transmit path of the RF front-end stage of FIG. 1 can comprise a power amplifier (PA5-PA6), a low pass filter (F5-F6) designed to limit the high frequency content of the amplified RF signal, the antenna switch (130) which connects the LB transmit path to the common antenna (140) for final transmission of the RF signal to the air.
  • It should be noted that although the RF front-end stage (100) of FIG. 1 comprises four power amplifiers (PA1-PA4), it comprises seven different transmit paths, six of which share a same power amplifier (PA1-PA3) and a same filter (F1-F3). This can be made possible due to an adjustable feature of the power amplifiers, which as described previously can be adjusted to cater to one of several specific transmission modes and/or frequency bands. A switch (SW1-SW3) can be used to select a duplexer fit to the corresponding transmission mode and/or frequency band. For example, PA1 can be used for transmission of a specific mode and covering two distinct channels (e.g. frequency bands), one channel using a transmission filter defined by the duplexer D1 and the other channel using a transmission filter as defined by the duplexer D2. During a transmission of the specific mode at the first channel, switch SW1 routes the RF signal to be transmitted to duplexer D1 while the PA1 is adjusted for the specific mode and (first) channel of operation (e.g. via controls sent by transceiver unit (110). During a transmission of an RF signal corresponding to the specific mode at the second channel, switch SW1 routes the RF signal to be transmitted to duplexer D2 while the PA2 is configured (e.g. adjusted) to operate in the specific mode and (second) channel.
  • Although not shown in FIG. 1 and as understood by the skilled person, the various configurable elements of the RF front-end stage (100) (e.g. PA1-PA3, SW1-SW3, antenna switch 130) can be controlled via associated controlling signals by an RF signal-aware processor, such as, for example, the transceiver unit (110), and according to a desired mode of operation (e.g. transmit, receive), a desired signal mode (e.g. GMSK, EDGE, WCDMA, etc.) and a desired channel (e.g. frequency band). More information on controlling a configuration of a power amplifier according to desired operation characteristics (e.g. output power, frequency, linearity, thermal compensation, operating parameter variation, etc.) can be found, for example, in U.S. patent application Ser. No. 13/828,121, filed on Mar. 14, 2013, entitled “Systems and Methods for Optimizing Amplifier Operations”, U.S. patent application Ser. No. 13/797,779 entitled “Scalable Periphery Tunable Matching Power Amplifier”, filed on Mar. 12, 2013, U.S. patent application Ser. No. 13/967,866 entitled “Tunable Impedance Matching Network”, filed on Aug. 15, 2013, U.S. patent application Ser. No. 13/797,686 entitled “Variable Impedance Match and Variable Harmonic Terminations for Different Modes and Frequency Bands”, filed on Mar. 12, 2013, U.S. patent application Ser. No., 14/042,331 entitled “Methods and Devices for Thermal Control in Power Amplifier Circuits”, filed on Sep. 30, 2013, U.S. patent application Ser. No. 13/829,946 entitled “Amplifier Dynamic Bias Adjustment for Envelope Tracking”, filed on Mar. 14, 2013, and U.S. patent application Ser. No. 13/830,555 entitled “Control Systems and Methods for Power Amplifiers Operating in Envelope Tracking Mode”, filed on Mar. 14, 2013, the disclosures of which are incorporated herein in their entirety.
  • FIG. 2A shows a configuration of the RF front-end stage (100) of FIG. 1 for a specific simultaneous activation of a transmit path and a receive path. The receive path of FIG. 2A comprises the amplifier T1 of the transceiver unit (110), the filter F1, the power amplifier PA1, the switch SW1, a transmit filter of the duplexer D1, the antenna switch (130) and the antenna (140). As shown in FIG. 2A, the power amplifier PA1 can be a module comprising one or more power amplifiers, such as, for example, a driver (250) and a final (260). According to some embodiments, one or more power amplifiers of the power amplifier module PA1 can be a scalable periphery amplifier, such as described, for example, in U.S. patent application Ser. No. 13/797,779. According to further embodiments, tunable match elements can be coupled to an input and/or output of the one or more power amplifiers such as to provide further tuning capability of the design with respect to various operating parameters, such as described in, for example, U.S. patent application Ser. No. 13/797,779, U.S. patent application Ser. No. 13/967,866 and U.S. patent application Ser. No. 13/797,686. According to yet further embodiments, the one or more power amplifiers can comprise envelope tracking amplifiers such as to provide a wider flexibility in operation with respect to, for example, linearity and output power of the amplifier, and as described in, for example, U.S. patent application Ser. No. 13/829,946 and U.S. patent application Ser. No. 13/830,555.
  • FIG. 2B shows a power amplifier module PA1 which can be used in a transmit path of the RF front-end stage (100) of FIG. 1 and comprising the various embodiments described in the previous section. In an exemplary implementation, amplifiers (250, 260) can be envelope tracking (ET) amplifiers (250, 260) and can be biased via an envelope tracking power supply (not shown in the figure) under control of an envelope tracking control signal which can be generated by an RF signal-aware processor, such as, for example, the transceiver unit (110). As seen in FIG. 2B, the power amplifier module PA1 can comprise tunable matching elements (270, 280, 290) coupled to the respective input and output of constituent amplifiers (250, 260).
  • Given the complexity of an RF front-end stage (100) as depicted in FIG. 1, the complexity of each associated transmit path (200) as depicted in FIG. 2A and the complexity of a corresponding power amplifier (PA1) used for amplifying an RF signal for transmission, calibration of the RF signal at various points in the transmission path can become of paramount importance, as operating variables, such as battery power, component aging, operating temperature and the like can negatively impact performance of the transmission as measured, for example, by RF power level, DC content of the RF signal, linearity (e.g. frequency harmonic content, adjacent leakage channel ratio ACLR) and the like. Although such calibration is typical during a production test of the front-end stage, wherein calibration of the RF signal can be performed at various points of the transmit paths under a controlled environment and controlled input RF signals (e.g. using RF test signals of known and variable/controllable amplitude, phase, modulation, etc.), such calibration is not possible during normal (e.g. customer) usage of the RF front-end stage in a cellular device due to various regulations governing unintentional (e.g. unassigned channel) RF transmission powers which can be transmitted during such calibration. It should be noted that transceiver units, such as transceiver unit (110) depicted in FIG. 1, typically perform a calibration routine during a power up stage of the RF front-end stage (100) and even periodically during operation of the stage. However, such calibration performed by a transceiver unit is limited to the RF signal output by the transceiver unit and cannot take into account variations in a full transmit path used to transmit the RF signal. Accordingly, the subject of the present disclosure is to provide means (e.g. methods and devices) to calibrate an RF transmit path during operation of the RF front-end stage without violating the various regulations governing unintentional RF transmission powers.
  • It follows that according to an embodiment of the present disclosure, a switchable load impedance (e.g. a switchable dummy load) is provided to a transmission path of the RF front-end stage (100) as depicted in FIG. 3A. According to the embodiment of the present disclosure as depicted in FIG. 3A, the switchable impedance RL (330) is provided through a switch (320) which can provide an additional (e.g. alternate) termination path to the RF signal prior to the duplexer unit (210). During a calibration phase, the switch can terminate the RF transmit path at the impedance RL (330) and can decouple (e.g. isolate) the RF signal from the remainder of the RF path which leads to the antenna switch (130). At the same time, a signal coupling device (310) inserted in the transmit path right before the switch (320), can be used to monitor (e.g. during a calibration phase) a fraction of the RF signal at that point (340) in the transmit path, the fraction being representative of the full scale RF signal at the same point of the transmit path. The RF signal detected by the signal coupling device (310) can be provided via a monitor terminal (340) for subsequent measuring by, for example, dedicated measurement circuitry or even the transceiver unit (110). During a calibration phase (e.g. RF power conducted to the load impedance RL), characteristics of the monitored RF signal (e.g. deviation from desired RF signal characteristics) can be used to further adjust components within the RF transmit path, such as, for example, a configurable power amplifier (e.g. PA1) and/or associated tunable match components as depicted in FIG. 2B, and as a consequence align/calibrate the transmit path to obtain an RF signal with the desired characteristic at the monitoring point. The signal coupling device (310) can be a directional coupler which functions by sending a fractional portion of an input power (coupling factor, for example 15-25 dB lower than a main input power) to a first coupled port, and can also send a fractional part of a reflected power to a second coupled port. The coupled power (e.g. at first/second coupled port) is typically measured with a detector, such as, for example, a diode detector, which detects the peak voltages associated with the detected powers. The person skilled in the art readily knows of various methods and devices for implementing the signal coupling device (310), such as, for example, a directional coupler (e.g. coupled line coupler or a broadside coupler). Alternatively, a simple capacitive tap can be used for signal coupling, although such tap does not provide the benefit of directivity and therefore cannot separate a forward signal from a reflected signal. During a normal operation phase of the circuit presented in FIG. 3A, the switch (320) allows coupling of the RF signal to the antenna (140) via the antenna switch (130).
  • In the embodiment according to the present disclosure as depicted by FIG. 3A, the switch (320) provides a level of isolation of the RF signal with respect to the antenna switch (130). This means that a small residual RF signal can be present at an input terminal (e.g. S1) of the antenna switch (130) which can be provided to the antenna for transmission to the air. According to another embodiment of the present disclosure, added isolation of the RF signal to the antenna (140) can be provided, during a calibration phase of the transmit path as depicted in FIG. 3A, by disconnecting, via the antenna switch (130), connection to the transmit path being calibrated. This is depicted in FIG. 3B, wherein the transmission path is being calibrated and the RF signal conducted into the termination load (330) is isolated from the antenna (140) via switch (320) and switch (130). For example, a typical transmitted output power for a universal mobile telecommunications system (UMTS) or a long term evolution (LTE) channel is around +24 dBm and a maximum allowed transmit power for a radio not transmitting can be around −33 dBm. Therefore, in such configuration a switch isolation requirement can be defined to be greater than 24+33 dB=57 dB, which can be provided by the combination isolation provided by the antenna switch (130) and the switch (320) as depicted in FIG. 3B. The switch (320) can provide an isolation equal to or greater than about 25 dB, and the combined isolation provided by the antenna switch (130) and the switch (320) can be equal to or greater than about 57 dB. As used herein, an isolation can be defined by an attenuation, in dB, between an RF signal power level at a common terminal of the switch, and an RF power level at a switching terminal of the switch, when the switching terminal is not connected via the switch to the common terminal.
  • Such calibration scheme as provided by the embodiments depicted in FIGS. 3A and 3B and described in the previous sections of the present disclosure, can allow to feed various calibration RF signals (e.g. patterns) to an RF transmit path, at various levels of powers, as required by a calibration routine run during the calibration phase, with minimum transmitted RF power at the antenna (140), such as not to violate the various regulations governing unintentional RF transmission powers. Such calibration routine and associated calibration RF signals can be provided, for example, by the transceiver unit (110) or other dedicated signal processor.
  • The combination of a switchable load impedance, whose function can be provided by a combination of a switch (e.g. 320) and a terminating impedance (e.g. resistor 330), and the signal coupling device (e.g. 310), can be inserted at any point of the various transmit paths of the RF front-end stage (100) of FIG. 1. According to some embodiments of the present disclosure and as depicted in FIG. 3C, such combination can be inserted after an adjusting element (360) of a transmission path, such as to allow performing some adjustment of the RF signal as being monitored. The adjusting element (360) can be a power amplifier (PA1-PA6), a filter (F1-F6), or a duplexer (D1-D7), all of which are readily available elements of the RF front-end stage (100) depicted in FIG. 1. As previously discussed in the present disclosure, and as further explained in the various references previously mentioned, such elements can be made adjustable. For example, filters can be made adjustable by using adjustable reactive components, such as, for example, digitally tunable capacitors and digitally tunable inductors as described in the International Application No. PCT/US2009/001358 and in the U.S. patent application Ser. No. 13/595,893, some implementation of which are described in, for example, the U.S. patent application Ser. No. 13/595,893 and the U.S. patent application Ser. No. 13/967,866. Also, a power amplifier can be made adjustable by using, for example, the previously discussed configuration provided in FIG. 2B, or a scalable periphery amplifier with optional tunable matching elements coupled to its input and/or output, as described in, for example, U.S. patent application Ser. No. 13/797,779, U.S. patent application Ser. No. 14/042,312, U.S. patent application Ser. No. 13/967,866 and U.S. patent application Ser. No. 13/797,686. The adjusting element (360) of FIG. 3D can be any of the adjusting components of the power amplifier, such as, for example, any of (250, 260, 270, 280 and 290) of FIG. 2B. Furthermore, several combination switchable load impedances (310, 320) can be inserted each following one of the adjustable elements (250, 260, 270, 280 and 290) of the configuration depicted in FIG. 2B, such as depicted in FIG. 3E. In the exemplary embodiment according to the present disclosure as depicted in FIG. 3E, each of the switchable load impedances (370) can be used to terminate the transmit path at a point of the switchable load and allow to monitor via an associated RF coupling device (310) the terminated RF signal at that point. Furthermore, adjustments to an adjustable element (360) of the transmit path (e.g. placed prior to the switch 370 and the coupling device 310) by a controller can allow to calibrate the transmit path up to the point of termination provided by the switchable load. As such, calibration of the transmit path at various points of the transmit path is provided via the plurality of the switchable load impedances.
  • According to an embodiment of the present disclosure, FIG. 4A depicts a configuration wherein the switchable load impedance (e.g. 420 and 330) is provided after the antenna switch (130). In the configuration depicted by FIG. 4A, the switchable load impedance is provided in a portion of the transmission path common to all the transmit paths of the RF front-end (100). This configuration allows to calibrate all transmit paths in their entirety (e.g. except the actual antenna load) using a same switchable load impedance (420, 330) and a signal coupling device (310). For example, to calibrate an RF transmit path using the configuration depicted in FIG. 4A, the switching load (330) can be first inserted into the common transmit path and consequently isolating the antenna from the transmit path, then activating a transmit path to be calibrated via the various controlling elements as depicted in the RF front-end stage of FIG. 1, such as the various switches and power amplifiers, and finally performing the calibration of the selected transmit path by feeding various calibration signals to the activated transmit path and adjusting the various adjustable elements of the selected transmit path using the feedback provided by the monitoring RF signal (e.g. at terminal 440) provided by the RF signal coupling device (310). In contrast, in order to allow calibration of all transmit paths of the RF front-end stage (100) using the configuration depicted in FIG. 3B, a same switchable load impedance (320, 330) and signal coupling device (310) must be provided for each of the transmit paths.
  • The embodiment according to the present disclosure as depicted in FIG. 4A can minimize the number of switchable impedance loads (420, 330) and signal coupling devices (310) required to calibrate the various transmit paths of the RF front-end stage (100) of FIG. 1. It can also allow for a higher precision of calibration, as the calibration is performed on the RF signal right at the antenna (140), as opposed to an RF signal at a point further away from the antenna (140), as measured, for example, by number of active and passive elements of the transmission path between the antenna and the calibration point. For example, the configuration according to the present disclosure and as depicted in FIG. 4A includes the duplexer (210) and antenna switch (130) as part of a calibration and tuning adjustment based on a signal provided at terminal (440).
  • Furthermore, and according to an embodiment of the present disclosure, isolation of the calibration RF signal into the antenna (140) can be further increased by adding more switches between the antenna and the switchable load impedance. For instance, in the embodiment depicted by FIG. 4A, a single switch (420) provides the isolation between the RF calibration signal into the terminating load (330) and the antenna (140). Further isolation can be provided by inserting another switch between the antenna (140) and the terminating load (330) as depicted in FIG. 4B.
  • As the RF signal coupling device (310) can affect an amplitude of the RF signal being transmitted, it may be desirable not to have the coupling device as integral part of the transmit path. It follows that according to an embodiment of the present disclosure, the RF signal coupling device (310) can be switched into the transmit path only during a calibration phase, such as depicted in FIG. 5. In the embodiment according to the present disclosure depicted in FIG. 5, the RF signal coupling device (310) is switched into the transmit path at the same time as the terminating load (330) via the switch (420).
  • The various active and passive elements in the various transmit paths of the RF front-end stage (100) of FIG. 1 can be designed for a nominal working impedance of 50 Ohms. FIG. 6A shows an equivalent AC signal circuit of a transmit path of the RF front-end stage (100), comprising an AC voltage source (610) which provides a signal to a load impedance (620) over a transmit path (605) of nominal impedance (e.g. same value as the load impedance). The load impedance can represent the antenna (140) of the RF front-end stage (100), the voltage source can be the equivalent circuital representation of a power amplifier module (PA1-PA7) of the RF front-end stage (100), and the transmit path can represent the combination of all other components in the path. The skilled person will know that providing a branch of impedance (630) sufficiently higher than the nominal transmit path impedance (e.g. >1K Ohms) can have a negligible impact on the RF signal integrity at the load (620) (e.g. antenna) of the transmit path depicted in FIG. 6A, while providing a sample of the RF signal at the end of the branch (e.g. terminal 640). Accordingly and pursuant to another embodiment of the present disclosure, FIG. 6B depicts an RF signal monitoring scheme according to an embodiment of the present disclosure which can be used during an active transmission phase of the RF front-end stage with minimal impact on the integrity of the transmitted RF signal. The RF signal sampled by the sampling resistor (630) and provided at the terminal (640) can be monitored during a transmission phase and adjustments to the various adjustable elements in a corresponding active transmit path can be made accordingly, as discussed in prior sections. The switch (420) can be provided to decouple, if needed, the sampling resistor (630) from the transmit path. If desired, and according to further embodiments of the present disclosure, the switch (420) and/or the sampling resistor (630) can be monolithically integrated with the antenna switch (130), as depicted by module (650) of FIG. 6C.
  • By way of further example and not limitation, the switching impedance load (330) can present a 50Ω impedance, which is a common standard in RF circuit design. Furthermore, any switch or switching circuitry of the present disclosure, such as switches (130, 320, 420, 420 a) shown in the various figures of the present disclosure can be implemented using transistors, stacked transistors (FETs), diodes, or any other devices or techniques known to or which can be envisioned by a person skilled in the art. In particular, such switching circuitry can be constructed using CMOS technology and various architectures known to the skilled person, such as, for example, architecture presented in U.S. Pat. No. 7,910,993, issued on Mar. 22, 2011 and entitled “Method and Apparatus for use in Improving Linearity of MOSFET's using an Accumulated Charge Sink”, and in U.S. Pat. No. 6,804,502, issued on Oct. 12, 2004 and entitled “Switch Circuit and Method of Switching Radio Frequency Signals”, both incorporated herein by reference in their entirety. FIG. 7 shows an exemplary embodiment of a single-pole single-throw switch with stacked transistors, which the skilled person can use as an elementary component of the various switches used in the various embodiments according to the present disclosure.
  • Although FETs (e.g. MOSFETs) can be used to describe transistor and stacked transistor switches used in the various embodiments of the present disclosure, a person skilled in the art would recognize that either P-type or N-type MOSFETs may be used. The skilled person would also recognize that other types of transistors such as, for example, bipolar junction transistors (BJTs) can be used instead or in combination with the N-type or P-type MOSFETs. Furthermore, a person skilled in the art will also appreciate the advantage of stacking more than two transistors, such as three, four, five or more, provide on the voltage handling performance of the switch. This can for example be achieved when using non bulk-silicon technology, such as insulated silicon on sapphire (SOS) technology and silicon on insulated (SOI) technology. In general, the various switches used in the various embodiments of the present disclosure, including when monolithically integrated with the dummy load and other components (e.g. as discussed later), can be constructed using CMOS, silicon germanium (SiGe), gallium arsenide (GaAs), gallium nitride (GaN), bipolar transistors, or any other viable semiconductor technology and architecture known, including micro-electro-mechanical (MEM) modules. Additionally, different device sizes and types can be used within a stacked transistor switch such as to accommodate various current handling capabilities of the switch.
  • According to the various embodiments of the switchable impedance load, a switch configured to terminate a transmit path at a calibration point with a load equivalent to what the transmit path sees at the calibration point during normal operation (e.g. RF signal transmission), is inserted at the calibration point of the transmit path of an RF front-end stage. The switch is coupled to the terminating load, and the terminating load may be external to the switch or internal (e.g. monolithically integrated with the switch), as depicted by the various figures of the present disclosure. A configuration with an external terminating load to the switch can provide the flexibility of easier power handing as larger size resistors can be used for enhanced power dissipation.
  • According to an embodiment of the present disclosure, the terminating load of the switchable impedance load can be monolithically integrated with the switch, such as to provide a more compact profile of the assembly. Such monolithic integration of the switch and the terminating load is depicted in FIG. 3D, wherein the switchable impedance load module (370) comprises the switch (320) and the terminating load (330). Although not shown in the FIG. 3D, according to a further embodiment of the present disclosure, the RF signal coupling device (310) may also be monolithically integrated within the module (370). The skilled person knows of various circuitries adapted to function as the RF signal coupling device, such as, for example, a directional coupler or a capacitive coupler.
  • According to a further embodiment of the present disclosure, the switchable impedance load can be monolithically integrated within a power amplifier, such as, for example, a power amplifier (SP1, . . . , SP6) of the RF front-end stage (100) of FIG. 1. Accordingly, FIG. 3F depicts such embodiment according to the present disclosure, wherein the RF signal coupling device (310), the switch (320) and the terminating load impedance (330) are monolithically integrated in a power amplifier module (390), which further comprises power amplifier stages (250) and (260). As previously mentioned, more than one such switchable impedance load can be provided, for example following an adjustable element of the amplifier stage (250, 260) (e.g. as depicted in FIG. 2B). According to further embodiments of the present disclosure, the terminating load (330) of the amplifier module (390) can be provided external to the amplifier module (390), such as to provide more flexibility in size (e.g. power dissipation) of the terminating load (330).
  • According to another exemplary embodiment of the present disclosure, the antenna switch (130) of the RF front-end stage (110) and the switchable impedance load (420, 330) can be monolithically integrated, as depicted by module (470) of FIG. 4B. In the exemplary embodiment presented in FIG. 4C, the RF signal coupling device is placed in front of the antenna switch (130), and thus the monitor signal detected at terminal (440) of FIG. 4C does not include an effect of the switch (130) on the transmit path terminated at the switched load (330). Accordingly, a further exemplary embodiment of the present disclosure can comprise the RF signal coupling device (310) monolithically integrated within the antenna switch (130), as depicted by module (480) of FIG. 4D.
  • The examples set forth above are provided to give those of ordinary skill in the art a complete disclosure and description of how to make and use the embodiments of the present disclosure, and are not intended to limit the scope of what the inventors regard as their disclosure. Modifications of the above described modes for carrying out the disclosure may be used by persons of skill in the art, and are intended to be within the scope of the following claims. All patents and publications mentioned in the specification may be indicative of the levels of skill of those skilled in the art to which the disclosure pertains. All references cited in this disclosure are incorporated by reference to the same extent as if each reference had been incorporated by reference in its entirety individually.
  • It is to be understood that the disclosure is not limited to particular methods or systems, which can, of course, vary. It is also to be understood that the terminology used herein is for the purpose of describing particular embodiments only, and is not intended to be limiting. As used in this specification and the appended claims, the singular forms “a”, “an”, and “the” include plural referents unless the content clearly dictates otherwise. The term “plurality” includes two or more referents unless the content clearly dictates otherwise. Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which the disclosure pertains.
  • A number of embodiments of the disclosure have been described. Nevertheless, it will be understood that various modifications may be made without departing from the spirit and scope of the present disclosure. Accordingly, other embodiments are within the scope of the following claims.

Claims (36)

1. A radio frequency (RF) circuital arrangement configured to transmit an RF signal at an output RF transmit port via one or more RF transmit paths, wherein a transmit path of the one or more transmit RF paths comprises:
one or more adjustable RF devices configured during operation to affect one or more characteristics of the RF signal; and
a terminating switch positioned between an adjustable RF device of the one or more adjustable RF devices and the output RF transmit port,
wherein:
during a first mode of operation of the RF transmit path, the terminating switch is configured to couple the RF signal to the output RF transmit port, and
during a second mode of operation of the RF transmit path, the terminating switch is configured to isolate the RF signal from the output RF transmit port and terminate the RF signal into a terminating load connected to a terminating terminal of the terminating switch.
2. The RF circuital arrangement of claim 1, further comprising an output switch, wherein the output switch is configured to couple a selected RF transmit path of the plurality of RF transmit paths to the output RF transmit port and isolate a remaining RF transmit paths of the plurality of RF transmit paths from the output RF transmit port.
3. The RF circuital arrangement of claim 1, wherein an isolation provided by the terminating switch with respect to the output RF transmit port during the second mode of operation is equal to or greater than about 25 dB.
4. The RF circuital arrangement of claim 2, wherein a combined isolation provided by the terminating switch and the output switch during the second mode of operation of the RF transmit path of the plurality of RF transmit paths with respect to the output RF transmit port is equal to or greater than about 57 dB when the output switch isolates the transmit path from the output RF transmit port.
5. The RF circuital arrangement of claim 1, wherein during the first mode of operation of the RF transmit path the terminating switch connects the RF signal at a common terminal of the terminating switch to a switching terminal of the terminating switch such as to provide a low resistance conduction path to the output RF transmit port, and wherein during the second mode of operation of the RF transmit path the terminating switch connects the RF signal at the common terminal of the terminating switch to the terminating terminal.
6. The RF circuital arrangement of claim 4, further comprising an RF coupling device operatively coupled to the transmit path of the plurality of transmit paths at a coupling point between the terminating switch and the adjustable RF device, wherein the RF coupling device is configured to sense an RF signal at the coupling point.
7. The RF circuital arrangement of claim 6, further comprising a controller unit configured to select a mode of operation of the RF transmit path and adjust the one or more adjustable RF devices based on a characteristic of the one or more characteristics of a sensed RF signal during the second mode of operation, wherein the mode of operation comprises the first mode of operation and the second mode of operation.
8. The RF circuital arrangement of claim 7, wherein the controller unit is further configured to control the output switch.
9. The RF circuital arrangement of claim 7, wherein the second mode of operation is a calibration mode used to calibrate the selected transmit path and wherein the sensed RF signal is based on an RF test signal of one or more RF test signals suitable for detecting the characteristic of the one or more characteristics of the sensed RF signal.
10. The RF circuital arrangement of claim 9, wherein the controller unit is further configured to generate the one or more RF test signals, and to select, during the calibration mode, the RF test signal of the one or more RF test signals.
11. The RF circuital arrangement of claim 9, wherein an adjustment of the one or more adjustable RF devices during the calibration mode of the selected transmit path provides a desired operating characteristic of the one or more adjustable RF devices for the first mode of operation, wherein the desired operating characteristic is in correspondence of a desired characteristic of the one or more characteristics of the RF signal during the first mode of operation.
12. The RF circuital arrangement of claim 9, wherein during the second mode of operation the controller unit is further configured to control the output switch to isolate the RF transmit path from the output RF transmit port.
13. The RF circuital arrangement of claim 9, wherein the characteristic of the sensed RF signal comprises one or more of: a) an amplitude, b) a power level, c) a DC content, d) linearity, e) a phase shift, f) a harmonic frequency content, and g) an adjacent channel leakage ratio (ACLR) of the sensed RF signal.
14. A radio frequency (RF) circuital arrangement configured to transmit an RF signal at an output RF transmit port, the RF circuital arrangement comprising:
an output switch comprising a plurality of switching terminals and a common terminal, wherein the common terminal is operatively coupled to the output RF transmit port;
a plurality of RF transmit paths comprising one or more adjustable RF devices and configured, during operation, to transmit the RF signal, wherein the plurality of RF transmit paths are coupled to the plurality of switching terminals; and
a terminating switch positioned between an adjustable RF device of the one or more adjustable RF devices and the output RF transmit port,
wherein:
during a first mode of operation of the RF circuital arrangement, the terminating switch is configured to couple the RF signal to the output RF transmit port, and
during a second mode of operation of the RF circuital arrangement, the terminating switch is configured to isolate the RF signal from the output RF transmit port and terminate the RF signal into a terminating load connected to a terminating terminal of the terminating switch.
15. The RF circuital arrangement of claim 14, wherein an isolation provided by the terminating switch during the second mode of operation with respect to the output transmit port is equal to or greater than about 25 dB.
16. The RF circuital arrangement of claim 14, wherein during the first mode of operation the output switch is configured to couple the RF signal to the output RF transmit port, and during the second mode of operation the output switch is configured to isolate the RF signal from the RF transmit port.
17. The RF circuital arrangement of claim 16, wherein a combined isolation provided by the terminating switch and the output switch with respect to the output RF transmit port during the second mode of operation is equal to or greater than about 57 dB.
18. The RF circuital arrangement of claim 14, wherein the terminating switch is positioned between the common terminal of the output switch and the output RF transmit port.
19. The RF circuital arrangement of claim 18, further comprising an RF coupling device operatively coupled to the terminating switch at a coupling point, wherein the RF coupling device is configured to sense an RF signal at the coupling point.
20. The RF circuital arrangement of claim 19, wherein the coupling point is positioned between the terminating terminal of the terminating switch and the terminating load.
21. The RF circuital arrangement of claim 19, wherein the coupling point is positioned between the common terminal of the output switch and the common terminal of the terminating switch.
22. The RF circuital arrangement of claim 18, further comprising an isolation switch positioned between the terminating switch and the output RF transmit port.
23. The RF circuital arrangement of claim 22, wherein the terminating switch and the isolation switch combined provide an isolation with respect to the output RF transmit port equal to or greater than about 57 dB.
24. A monolithically integrated radio frequency (RF) circuit comprising:
an RF switch comprising a common terminal and a plurality of switching terminals, wherein during operation the switch is adapted to connect a selected switching terminal of the plurality of switching terminals to the common terminal, and
a resistor connected via a first terminal of the resistor, to a terminating switching terminal of the plurality of switching terminals, wherein the RF switch and the resistor are monolithically integrated on a same integrated circuit.
25. The monolithically integrated RF circuit of claim 24, further comprising one or more RF devices comprising of: a) an RF power amplifier, and b) an RF filter network.
26. The monolithically integrated RF circuit of claim 25, wherein an RF device of the one or more RF devices is adjustable.
27. An RF circuital arrangement comprising the monolithically integrated RF circuit of claim 24.
28. The RF circuital arrangement of claim 27, wherein a second terminal of the resistor is connected to one of: a) ground, and b) a measuring device.
29. The monolithically integrated RF circuit of claim 24, wherein the monolithically integrated RF circuit is fabricated using a technology comprising one of: a) silicon on sapphire, b) silicon on insulator, and c) bulk-silicon.
30. A method for calibrating a transmit path of a radio frequency (RF) front-end stage, the method comprising:
providing a switchable load impedance in a transmit path;
during a calibration of the transmit path, terminating the transmit path at the switchable load impedance;
based on the terminating, reducing an output RF signal power at an output antenna of the transmit path;
based on the terminating, measuring an RF signal characteristic at the switchable load impedance;
based on the measuring, adjusting an adjustable RF device of the transmit path, and
based on the adjusting, calibrating the transmit path,
wherein the reducing provides an output RF signal power at the output antenna of the transmit path lower than a desired RF transmission power.
31. The method of claim 30, wherein the desired RF transmission power is a locally regulated unintentional RF transmission power.
32. The method of claim 30, wherein the reducing provides an output RF signal power at the output antenna of at least 57 dB below an output RF signal power at the output antenna when the transmit path is not terminated at the switchable load impedance.
33. The method of claim 32, wherein the terminating further comprises switching an antenna switch such as further reducing the output RF signal power at the output antenna.
34. A method for calibrating a transmit path of a radio frequency (RF) front-end stage, the method comprising:
providing an RF front-end stage comprising one or more transmit paths, wherein each transmit path of the one or more transmit paths is adapted to be connected to a transmit port via an output RF switch;
providing one or more RF switches, wherein an RF switch of the one or more RF switches is adapted to provide a series connection between two RF components of a transmit path of the plurality of transmit paths via a common terminal of the RF switch and a first switching terminal of the RF switch;
selecting a transmit path of the plurality of transmit paths for transmission of an RF signal at the transmit port;
configuring the output switch to connect the selected transmit path to the output port;
configuring at least a subset of the one or more RF switches to provide series connections between two RF components of the selected transmit path;
providing the RF signal to the selected transmit path;
transmitting the RF signal based on the providing of the RF signal;
calibrating the selected transmit path by performing the following steps:
i) configuring an RF switch of the one or more RF switches to disable a series connection between two RF components of the selected transmit path,
ii) based on the configuring, terminating the selected transmit path at a resistor load connected to a second switching terminal of the RF switch,
iii) sensing an RF signal at the resistor load,
iv) based on the sensing, adjusting an adjustable RF component of the selected transmit path, and
v) configuring the RF switch of the one or more RF switches to provide series connection between the two RF components of the transmit path; and
based on the calibrating, obtaining a desired signal characteristic of the transmitted RF signal.
35. The method of claim 34, further comprising maintaining the desired signal characteristic by repeating the calibrating of the selected transmit path.
36. The method of claim 34, wherein the desired signal characteristic comprises one or more of: a) an amplitude, b) a power level, c) a DC content, d) linearity, e) a phase shift, 0 a harmonic frequency content, and g) an adjacent channel leakage ratio (ACLR) of the transmitted RF signal.
US14/272,387 2013-03-14 2014-05-07 RF Transmit Path Calibration via On-Chip Dummy Load Abandoned US20150326326A1 (en)

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US14/195,701 Active US10038409B2 (en) 2013-03-14 2014-03-03 RF switch with integrated tuning
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Cited By (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9535110B2 (en) 2013-09-30 2017-01-03 Peregrine Semiconductor Corporation Mismatch detection using replica circuit
US20170047666A1 (en) * 2015-08-12 2017-02-16 Qorvo Us, Inc. Radio frequency front end architecture with a switch topology for routing filter circuits while substantially reducing variations in the reactive loading at common ports
US20170146591A1 (en) * 2013-09-30 2017-05-25 Peregrine Semiconductor Corporation Mismatch Detection Using Replica Circuit
US20180091187A1 (en) * 2015-06-03 2018-03-29 Murata Manufacturing Co., Ltd. High-frequency front-end circuit
US20180123621A1 (en) * 2016-10-28 2018-05-03 Airoha Technology Corp. Multi-mode multi-band transceiver, radio frequency front-end circuit and radio frequency system using the same
US20180131453A1 (en) * 2016-06-28 2018-05-10 Peregrine Semiconductor Corporation Integrated Circuit Calibration Architecture
WO2018084889A1 (en) 2016-11-02 2018-05-11 Peregrine Semiconductor Corporation Mismatch detection using replica circuit
US9973173B2 (en) 2015-06-30 2018-05-15 Qorvo Us, Inc. Switch topology for switching filters multiplexers
US10056874B1 (en) 2017-02-28 2018-08-21 Psemi Corporation Power amplifier self-heating compensation circuit
US10128963B2 (en) 2016-06-28 2018-11-13 Psemi Corporation Integrated circuit calibration architecture
WO2019005385A1 (en) * 2017-06-28 2019-01-03 Qualcomm Incorporated Systems and methods for reducing transmit and receive power via a t/r switch
CN109196372A (en) * 2016-04-08 2019-01-11 雷声公司 Changeable transmission/reception (T/R) module
US10236836B1 (en) 2017-12-01 2019-03-19 Psemi Corporation Tuned amplifier matching based on band switch setting
WO2019107899A1 (en) * 2017-11-28 2019-06-06 Samsung Electronics Co., Ltd. Method for configuring power in wireless communication system and apparatus thereof
US10439562B2 (en) 2017-02-28 2019-10-08 Psemi Corporation Current mirror bias compensation circuit
US10439563B2 (en) 2017-02-28 2019-10-08 Psemi Corporation Positive temperature coefficient bias compensation circuit
US10720954B2 (en) 2018-11-20 2020-07-21 Honeywell International Inc. System and method to share single antenna between two L-band receiver/transmitters
CN112928996A (en) * 2019-12-06 2021-06-08 矽利康实验室公司 System and method for mitigating interference caused by coupling a power amplifier to a voltage controlled oscillator
US11394406B2 (en) * 2020-03-27 2022-07-19 Murata Manufacturing Co., Ltd. Radio frequency module and communication device
US11394407B2 (en) * 2020-03-27 2022-07-19 Murata Manufacturing Co., Ltd. Radio frequency module and communication device
US20230120605A1 (en) * 2017-11-23 2023-04-20 Apple Inc. Apparatuses and methods for wireless communication

Families Citing this family (72)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7719343B2 (en) 2003-09-08 2010-05-18 Peregrine Semiconductor Corporation Low noise charge pump method and apparatus
EP1774620B1 (en) * 2004-06-23 2014-10-01 Peregrine Semiconductor Corporation Integrated rf front end
EP2568608B1 (en) 2008-02-28 2014-05-14 Peregrine Semiconductor Corporation Method and Apparatus for use in Digitally Tuning a Capacitor in an Integrated Circuit Device
US20150236748A1 (en) 2013-03-14 2015-08-20 Peregrine Semiconductor Corporation Devices and Methods for Duplexer Loss Reduction
US9673155B2 (en) 2014-02-14 2017-06-06 Peregrine Semiconductor Corporation Integrated tunable filter architecture
US9438196B2 (en) 2014-02-14 2016-09-06 Peregrine Semiconductor Corporation Integrated tunable filter architecture
US9762274B2 (en) * 2014-05-29 2017-09-12 Qualcomm Incorporated Feedback receive path with RF filter
KR102301680B1 (en) * 2014-07-16 2021-09-14 삼성전자주식회사 Diversity Amp Module and Apparatus comprising the same
US10483641B2 (en) * 2014-09-30 2019-11-19 Skyworks Solutions, Inc. Antenna switch modules and methods of making the same
US9825660B2 (en) * 2014-10-31 2017-11-21 Skyworks Solutions, Inc. Systems, devices and methods related to diversity receivers
US9571037B2 (en) 2014-10-31 2017-02-14 Skyworks Solutions, Inc. Diversity receiver front end system with impedance matching components
US9893752B2 (en) 2014-10-31 2018-02-13 Skyworks Solutions, Inc. Diversity receiver front end system with variable-gain amplifiers
US9813137B2 (en) * 2014-10-31 2017-11-07 Skyworks Solutions, Inc. Diversity receiver front end system with flexible routing
US10050694B2 (en) * 2014-10-31 2018-08-14 Skyworks Solution, Inc. Diversity receiver front end system with post-amplifier filters
KR102364233B1 (en) * 2014-10-31 2022-02-16 스카이워크스 솔루션즈, 인코포레이티드 Dynamic switch controller
US9559644B2 (en) * 2014-11-03 2017-01-31 Qorvo Us, Inc. Low noise amplifier
US20160134566A1 (en) * 2014-11-06 2016-05-12 Entropic Communications, Inc. Multi-band transceiver front-end architecture with reduced switch insertion loss
US9363794B1 (en) * 2014-12-15 2016-06-07 Motorola Solutions, Inc. Hybrid antenna for portable radio communication devices
US10009054B2 (en) 2015-05-28 2018-06-26 Skyworks Solutions, Inc. Impedance matching integrous signal combiner
GB2562823A (en) * 2015-06-01 2018-11-28 Skyworks Solutions Inc Systems, devices and methods related to diversity receivers
US9735952B2 (en) * 2015-09-22 2017-08-15 Intel IP Corporation Calibration of dynamic error in high resolution digital-to-time converters
US20170093032A1 (en) * 2015-09-29 2017-03-30 Silicon Laboratories Inc. Radio-Frequency Apparatus With Integrated Antenna Control and Associated Methods
US9721652B2 (en) * 2015-11-17 2017-08-01 Sandisk Technologies Llc State dependent sensing for wordline interference correction
KR102556605B1 (en) * 2015-12-07 2023-07-17 가부시키가이샤 와이솔재팬 Duplexer device
JP2017163197A (en) * 2016-03-07 2017-09-14 パナソニック株式会社 Power amplifier circuit
US10181820B2 (en) * 2016-05-17 2019-01-15 Skyworks Solutions, Inc. Power amplification system with envelope-based bias
US10148249B2 (en) * 2016-08-05 2018-12-04 Murata Manufacturing Co., Ltd. High frequency circuit and communication apparatus
GB2598237B (en) * 2016-08-29 2022-06-01 Skyworks Solutions Inc Multi-standard radio switchable multiplexer
US9843293B1 (en) 2016-09-16 2017-12-12 Peregrine Semiconductor Corporation Gate drivers for stacked transistor amplifiers
US9837965B1 (en) 2016-09-16 2017-12-05 Peregrine Semiconductor Corporation Standby voltage condition for fast RF amplifier bias recovery
US10250199B2 (en) 2016-09-16 2019-04-02 Psemi Corporation Cascode amplifier bias circuits
US9882531B1 (en) 2016-09-16 2018-01-30 Peregrine Semiconductor Corporation Body tie optimization for stacked transistor amplifier
JP2018050159A (en) * 2016-09-21 2018-03-29 株式会社村田製作所 Transmission reception module
US10397811B2 (en) * 2016-10-14 2019-08-27 At&T Intellectual Property I, L.P. Wireless channel sounder with fast measurement speed and wide dynamic range
US10305433B2 (en) 2017-02-28 2019-05-28 Psemi Corporation Power amplifier self-heating compensation circuit
WO2018168653A1 (en) * 2017-03-14 2018-09-20 株式会社村田製作所 High frequency module
US10038418B1 (en) 2017-04-04 2018-07-31 Psemi Corporation Optimized multi gain LNA enabling low current and high linearity including highly linear active bypass
US11881828B2 (en) 2017-04-04 2024-01-23 Psemi Corporation Tunable effective inductance for multi-gain LNA with inductive source degeneration
US10276371B2 (en) 2017-05-19 2019-04-30 Psemi Corporation Managed substrate effects for stabilized SOI FETs
US10672726B2 (en) 2017-05-19 2020-06-02 Psemi Corporation Transient stabilized SOI FETs
US10498212B2 (en) * 2017-05-26 2019-12-03 Dialog Semiconductor (Uk) Limited Gate driver
US10483921B2 (en) 2017-05-26 2019-11-19 Psemi Corporation Clockless frequency detector
US10355729B2 (en) 2017-06-09 2019-07-16 Qualcomm Incorporated Single receiver intra-band non-contiguous carrier aggregation
US10772052B2 (en) * 2017-06-16 2020-09-08 Qualcomm Incorporated Controlling coexistent radio systems in a wireless device
US10355674B2 (en) * 2017-07-24 2019-07-16 Arm Limited Clock gating circuit
US10305453B2 (en) * 2017-09-11 2019-05-28 Apple Inc. Electronic device antennas having multiple operating modes
US10263566B1 (en) * 2017-09-28 2019-04-16 Raytheon Company Radio frequency power amplifier
US10454426B2 (en) * 2017-11-30 2019-10-22 Texas Instruments Incorporated Methods and apparatus providing high efficiency power amplifiers for both high and low output power levels
US10979021B2 (en) 2017-12-07 2021-04-13 Infineon Technologies Ag System and method for a radio frequency filter
WO2019131077A1 (en) * 2017-12-25 2019-07-04 株式会社村田製作所 Switch module and communication device
US10581409B2 (en) 2017-12-27 2020-03-03 Psemi Corporation Clocked frequency detector RF auto-tuning system
US10164618B1 (en) * 2017-12-28 2018-12-25 Micron Technology, Inc. Jitter cancellation with automatic performance adjustment
US10381991B1 (en) * 2018-02-02 2019-08-13 Psemi Corporation Drain sharing split LNA
US10965021B2 (en) * 2018-03-05 2021-03-30 Skyworks Solutions, Inc. Radio frequency systems with tunable filter
US10659086B2 (en) * 2018-06-13 2020-05-19 Qorvo Us, Inc. Multi-mode radio frequency circuit
US10658386B2 (en) 2018-07-19 2020-05-19 Psemi Corporation Thermal extraction of single layer transfer integrated circuits
WO2020054388A1 (en) * 2018-09-11 2020-03-19 株式会社村田製作所 High frequency front end module and communication device
CN113228501A (en) * 2019-01-10 2021-08-06 天工方案公司 Apparatus and method for biasing of power amplifier
US11082021B2 (en) 2019-03-06 2021-08-03 Skyworks Solutions, Inc. Advanced gain shaping for envelope tracking power amplifiers
JP2021044654A (en) * 2019-09-10 2021-03-18 株式会社村田製作所 High-frequency circuit and communication device
US11239800B2 (en) 2019-09-27 2022-02-01 Skyworks Solutions, Inc. Power amplifier bias modulation for low bandwidth envelope tracking
JP2021087035A (en) * 2019-11-25 2021-06-03 株式会社村田製作所 High-frequency signal transmission and reception circuit
US11799502B2 (en) * 2020-01-09 2023-10-24 Skyworks Solutions, Inc. Mobile device front end architecture for multiple frequency bands
US11184039B1 (en) * 2020-05-22 2021-11-23 Qualcomm Incorporated Method of combining LTE-UHB+LAA+sub6-5G LNA ports
US11855595B2 (en) 2020-06-05 2023-12-26 Skyworks Solutions, Inc. Composite cascode power amplifiers for envelope tracking applications
US11482975B2 (en) * 2020-06-05 2022-10-25 Skyworks Solutions, Inc. Power amplifiers with adaptive bias for envelope tracking applications
JP2021197647A (en) * 2020-06-16 2021-12-27 株式会社村田製作所 Power amplifier module
US11611338B2 (en) * 2020-09-25 2023-03-21 Apple Inc. Transistor aging reversal using hot carrier injection
US11831279B2 (en) * 2021-04-12 2023-11-28 Infineon Technologies Ag Millimeter-wave power amplifier
IT202100013181A1 (en) * 2021-05-20 2022-11-20 St Microelectronics Srl PROCESS OF COLLECTING SIGNALS DETECTED FROM DETECTION TRANSISTORS, CORRESPONDING SENSOR DEVICE AND IMAGING CAMERA
JP2023003542A (en) * 2021-06-24 2023-01-17 太陽誘電株式会社 Filter and multiplexer
US20230142322A1 (en) * 2021-11-10 2023-05-11 Psemi Corporation Variable width for rf neighboring stacks

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5973363A (en) * 1993-07-12 1999-10-26 Peregrine Semiconductor Corp. CMOS circuitry with shortened P-channel length on ultrathin silicon on insulator
US20020021687A1 (en) * 2000-06-14 2002-02-21 Kazuya Toki Time-division multiplexing radio system
US6812885B2 (en) * 2002-05-24 2004-11-02 Honeywell International Inc. Radio altimeter test method and apparatus
US20070284724A1 (en) * 2006-06-09 2007-12-13 Robert Mark Englekirk Mounting integrated circuit dies for high frequency signal isolation
US7353020B2 (en) * 2003-11-17 2008-04-01 Hitachi Communication Technologies, Ltd. Radio access point testing apparatus and method of testing radio access point
US20090180403A1 (en) * 2008-01-11 2009-07-16 Bogdan Tudosoiu Multi-band and multi-mode radio frequency front-end module architecture
US20100112962A1 (en) * 2006-07-11 2010-05-06 Paulus Thomas Maria Van Zeijl Calibration of transmit signals in fdd-transceivers
US8112043B2 (en) * 2008-04-11 2012-02-07 Infineon Technologies Ag Radio frequency communication devices and methods

Family Cites Families (526)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1192119A (en) * 1967-11-11 1970-05-20 Tamaki Ohashi High-frequency Receiver Tuning Devices
US3470443A (en) 1967-12-07 1969-09-30 Nasa Positive dc to negative dc converter
US3654537A (en) 1970-04-29 1972-04-04 Westinghouse Electric Corp High efficiency power supply for charging capacitors in steps
US3646361A (en) 1970-10-16 1972-02-29 Hughes Aircraft Co High-speed sample and hold signal level comparator
US3699359A (en) 1971-04-20 1972-10-17 Philco Ford Corp Electronic latching device
US3731112A (en) 1971-12-15 1973-05-01 A Smith Regulated power supply with diode capacitor matrix
US3943428A (en) 1973-11-23 1976-03-09 General Electric Company DC to DC Voltage converter
US3942047A (en) 1974-06-03 1976-03-02 Motorola, Inc. MOS DC Voltage booster circuit
US3988727A (en) 1974-06-24 1976-10-26 P. R. Mallory & Co., Inc. Timed switching circuit
US3955353A (en) 1974-07-10 1976-05-11 Optel Corporation Direct current power converters employing digital techniques used in electronic timekeeping apparatus
US3975671A (en) 1975-02-24 1976-08-17 Intel Corporation Capacitive voltage converter employing CMOS switches
CH1057575A4 (en) 1975-08-14 1977-03-15
JPS5855685B2 (en) 1975-09-03 1983-12-10 株式会社日立製作所 Zoufuku Cairo
US4053916A (en) 1975-09-04 1977-10-11 Westinghouse Electric Corporation Silicon on sapphire MOS transistor
IT1073440B (en) 1975-09-22 1985-04-17 Seiko Instr & Electronics VOLTAGE LIFT CIRCUIT MADE IN MOS-FET
US4047091A (en) 1976-07-21 1977-09-06 National Semiconductor Corporation Capacitive voltage multiplier
US4079336A (en) 1976-12-22 1978-03-14 National Semiconductor Corporation Stacked transistor output amplifier
US4106086A (en) 1976-12-29 1978-08-08 Rca Corporation Voltage multiplier circuit
JPS5393350A (en) 1977-01-27 1978-08-16 Canon Inc Booster circuit
US4145719A (en) 1977-09-28 1979-03-20 Gte Sylvania Incorporated Multi-channel video switch using dual-gate MOS-FETS
US4139826A (en) 1977-12-27 1979-02-13 Rca Corporation Crystal overtone oscillator using cascade connected transistors
JPS54152845A (en) 1978-05-24 1979-12-01 Hitachi Ltd High dielectric strength mosfet circuit
JPS5574168A (en) 1978-11-28 1980-06-04 Oki Electric Ind Co Ltd Pnpn switch
DE2851789C2 (en) 1978-11-30 1981-10-01 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Circuit for switching and transmitting alternating voltages
US4256977A (en) 1978-12-26 1981-03-17 Honeywell Inc. Alternating polarity power supply control apparatus
US4241316A (en) 1979-01-18 1980-12-23 Lawrence Kavanau Field effect transconductance amplifiers
JPS6033314B2 (en) 1979-11-22 1985-08-02 富士通株式会社 Substrate bias voltage generation circuit
US4367421A (en) 1980-04-21 1983-01-04 Reliance Electric Company Biasing methods and circuits for series connected transistor switches
US4321661A (en) 1980-12-23 1982-03-23 Gte Laboratories Incorporated Apparatus for charging a capacitor
US4739191A (en) 1981-04-27 1988-04-19 Signetics Corporation Depletion-mode FET for the regulation of the on-chip generated substrate bias voltage
US4460952A (en) 1982-05-13 1984-07-17 Texas Instruments Incorporated Electronic rectifier/multiplier/level shifter
US4485433A (en) 1982-12-22 1984-11-27 Ncr Corporation Integrated circuit dual polarity high voltage multiplier for extended operating temperature range
DE3371961D1 (en) 1983-05-27 1987-07-09 Itt Ind Gmbh Deutsche Mos push-pull bootstrap driver
JPS6066504A (en) 1983-09-22 1985-04-16 Oki Electric Ind Co Ltd Bias generating circuit
JPS6148197A (en) 1984-08-13 1986-03-08 Fujitsu Ltd Charge-up circuit
US4748485A (en) 1985-03-21 1988-05-31 Hughes Aircraft Company Opposed dual-gate hybrid structure for three-dimensional integrated circuits
US4621315A (en) 1985-09-03 1986-11-04 Motorola, Inc. Recirculating MOS charge pump
US4777577A (en) 1985-10-01 1988-10-11 Maxim Integrated Products, Inc. Integrated dual charge pump power supply and RS-232 transmitter/receiver
US4679134A (en) 1985-10-01 1987-07-07 Maxim Integrated Products, Inc. Integrated dual charge pump power supply and RS-232 transmitter/receiver
US4897774A (en) 1985-10-01 1990-01-30 Maxim Integrated Products Integrated dual charge pump power supply and RS-232 transmitter/receiver
JPS62104173A (en) 1985-10-31 1987-05-14 Fujitsu Ltd Semiconductor device
JPH0434980Y2 (en) 1986-06-30 1992-08-19
US4769784A (en) 1986-08-19 1988-09-06 Advanced Micro Devices, Inc. Capacitor-plate bias generator for CMOS DRAM memories
US4736169A (en) 1986-09-29 1988-04-05 Hughes Aircraft Company Voltage controlled oscillator with frequency sensitivity control
JPS63238716A (en) 1986-11-14 1988-10-04 Nec Corp Switching circuit
US4752699A (en) 1986-12-19 1988-06-21 International Business Machines Corp. On chip multiple voltage generation using a charge pump and plural feedback sense circuits
US4825145A (en) 1987-01-14 1989-04-25 Hitachi, Ltd. Constant current circuit
JPS63290159A (en) 1987-05-20 1988-11-28 Matsushita Electric Ind Co Ltd Booster circuit
US4746960A (en) 1987-07-27 1988-05-24 General Motors Corporation Vertical depletion-mode j-MOSFET
US5081706A (en) 1987-07-30 1992-01-14 Texas Instruments Incorporated Broadband merged switch
US4847519A (en) 1987-10-14 1989-07-11 Vtc Incorporated Integrated, high speed, zero hold current and delay compensated charge pump
GB2214017A (en) 1987-12-22 1989-08-23 Philips Electronic Associated Ring oscillator
US4849651A (en) 1988-02-24 1989-07-18 Hughes Aircraft Company Two-state, bilateral, single-pole, double-throw, half-bridge power-switching apparatus and power supply means for such electronic power switching apparatus
JPH01254014A (en) 1988-04-04 1989-10-11 Toshiba Corp Power amplifier
JPH024011A (en) 1988-06-21 1990-01-09 Nec Corp Analog switch circuit
JPH0666443B2 (en) 1988-07-07 1994-08-24 株式会社東芝 Semiconductor memory cell and semiconductor memory
US4906587A (en) 1988-07-29 1990-03-06 Texas Instruments Incorporated Making a silicon-on-insulator transistor with selectable body node to source node connection
JPH077912B2 (en) 1988-09-13 1995-01-30 株式会社東芝 Boost circuit
JP2507567B2 (en) 1988-11-25 1996-06-12 三菱電機株式会社 MOS field effect transistor formed in semiconductor layer on insulator substrate
US4929855A (en) 1988-12-09 1990-05-29 Grumman Corporation High frequency switching device
US4939485A (en) 1988-12-09 1990-07-03 Varian Associates, Inc. Microwave field effect switch
US5313083A (en) 1988-12-16 1994-05-17 Raytheon Company R.F. switching circuits
US5001528A (en) 1989-01-31 1991-03-19 The United States Of America As Represented By The Secretary Of The Air Force Radiation hardened CMOS on SOI or SOS devices
JPH02215154A (en) 1989-02-16 1990-08-28 Toshiba Corp Voltage control circuit
US5105164A (en) 1989-02-28 1992-04-14 At&T Bell Laboratories High efficiency uhf linear power amplifier
US4893070A (en) 1989-02-28 1990-01-09 The United States Of America As Represented By The Secretary Of The Air Force Domino effect shunt voltage regulator
US4890077A (en) 1989-03-28 1989-12-26 Teledyne Mec FET monolithic microwave integrated circuit variable attenuator
US5012123A (en) 1989-03-29 1991-04-30 Hittite Microwave, Inc. High-power rf switching system
US4984040A (en) 1989-06-15 1991-01-08 Xerox Corporation High voltage thin film transistor with second gate
JP2879763B2 (en) 1989-06-27 1999-04-05 ソニー株式会社 PLL charge pump circuit
US5107152A (en) 1989-09-08 1992-04-21 Mia-Com, Inc. Control component for a three-electrode device
US5283457A (en) 1989-10-02 1994-02-01 Texas Instruments Incorporated Semiconductor on insulator transistor
US5095348A (en) 1989-10-02 1992-03-10 Texas Instruments Incorporated Semiconductor on insulator transistor
US5032799A (en) 1989-10-04 1991-07-16 Westinghouse Electric Corp. Multistage cascode radio frequency amplifier
US5350957A (en) 1989-10-20 1994-09-27 Texas Instrument Incorporated Electronic switch controlled by plural inputs
US5023494A (en) 1989-10-20 1991-06-11 Raytheon Company High isolation passive switch
US4999585A (en) 1989-11-06 1991-03-12 Burr-Brown Corporation Circuit technique for cancelling non-linear capacitor-induced harmonic distortion
US5038325A (en) 1990-03-26 1991-08-06 Micron Technology Inc. High efficiency charge pump circuit
US5061911A (en) 1990-04-03 1991-10-29 Motorola, Inc. Single fault/tolerant MMIC switches
JP3147395B2 (en) 1990-05-07 2001-03-19 セイコーエプソン株式会社 Integrated circuits and electronic equipment
IT1239781B (en) 1990-05-08 1993-11-15 Texas Instruments Italia Spa CIRCUIT AND METHOD TO SELECTIVELY SWITCH NEGATIVE VOLTAGES IN CMOS INTEGRATED CIRCUITS
US5345422A (en) 1990-07-31 1994-09-06 Texas Instruments Incorporated Power up detection circuit
US5081371A (en) 1990-11-07 1992-01-14 U.S. Philips Corp. Integrated charge pump circuit with back bias voltage reduction
JPH0732335B2 (en) 1990-11-16 1995-04-10 日本電信電話株式会社 High frequency amplifier
US5041797A (en) 1990-11-19 1991-08-20 Harris Corporation Micro-power gain lattice
US5111375A (en) 1990-12-20 1992-05-05 Texas Instruments Incorporated Charge pump
US5124762A (en) 1990-12-31 1992-06-23 Honeywell Inc. Gaas heterostructure metal-insulator-semiconductor integrated circuit technology
US5061907A (en) 1991-01-17 1991-10-29 National Semiconductor Corporation High frequency CMOS VCO with gain constant and duty cycle compensation
US6064872A (en) 1991-03-12 2000-05-16 Watkins-Johnson Company Totem pole mixer having grounded serially connected stacked FET pair
KR940006998B1 (en) 1991-05-28 1994-08-03 삼성전자 주식회사 Data output driver producing high output gain
US5126590A (en) 1991-06-17 1992-06-30 Micron Technology, Inc. High efficiency charge pump
US5274343A (en) 1991-08-06 1993-12-28 Raytheon Company Plural switch circuits having RF propagation networks and RF terminations
US5212456A (en) 1991-09-03 1993-05-18 Allegro Microsystems, Inc. Wide-dynamic-range amplifier with a charge-pump load and energizing circuit
EP0531125B1 (en) 1991-09-04 1997-01-29 Nec Corporation Radio transceiver
US5392186A (en) 1992-10-19 1995-02-21 Intel Corporation Providing various electrical protections to a CMOS integrated circuit
JPH0770245B2 (en) 1991-11-06 1995-07-31 株式会社大阪サイレン製作所 Rotation warning light
US5392205A (en) 1991-11-07 1995-02-21 Motorola, Inc. Regulated charge pump and method therefor
US5285367A (en) 1992-02-07 1994-02-08 Power Integrations, Inc. Linear load circuit to control switching power supplies under minimum load conditions
US5208557A (en) 1992-02-18 1993-05-04 Texas Instruments Incorporated Multiple frequency ring oscillator
US5182529A (en) 1992-03-06 1993-01-26 Micron Technology, Inc. Zero crossing-current ring oscillator for substrate charge pump
US5272457A (en) 1992-03-10 1993-12-21 Harris Corporation High isolation integrated switch circuit
JPH07106937B2 (en) 1992-03-16 1995-11-15 日本碍子株式会社 β-alumina solid electrolyte
US5477184A (en) 1992-04-15 1995-12-19 Sanyo Electric Co., Ltd. Fet switching circuit for switching between a high power transmitting signal and a lower power receiving signal
US5306954A (en) 1992-06-04 1994-04-26 Sipex Corporation Charge pump with symmetrical +V and -V outputs
US5807772A (en) 1992-06-09 1998-09-15 Semiconductor Energy Laboratory Co., Ltd. Method for forming semiconductor device with bottom gate connected to source or drain
US5317181A (en) 1992-09-10 1994-05-31 United Technologies Corporation Alternative body contact for fully-depleted silicon-on-insulator transistors
FR2696598B1 (en) 1992-10-01 1994-11-04 Sgs Thomson Microelectronics Charge pump type voltage booster circuit with bootstrap oscillator.
US5530722A (en) 1992-10-27 1996-06-25 Ericsson Ge Mobile Communications Inc. Quadrature modulator with integrated distributed RC filters
JPH06152334A (en) 1992-11-06 1994-05-31 Mitsubishi Electric Corp Ring oscillator and constant voltage generating circuit
JP3321899B2 (en) 1992-12-04 2002-09-09 株式会社デンソー Semiconductor device
JPH0799251A (en) 1992-12-10 1995-04-11 Sony Corp Semiconductor memory cell
US5335200A (en) 1993-01-05 1994-08-02 Texas Instruments Incorporated High voltage negative charge pump with low voltage CMOS transistors
FR2702317A1 (en) 1993-03-03 1994-09-09 Philips Composants Low consumption, low noise charge pump circuit and frequency synthesizer equipped with such a circuit.
JPH07118666B2 (en) 1993-04-28 1995-12-18 日本電気株式会社 Portable wireless device
GB9308944D0 (en) 1993-04-30 1993-06-16 Inmos Ltd Ring oscillator
JP3243892B2 (en) 1993-05-21 2002-01-07 ソニー株式会社 Signal switch
KR0132641B1 (en) 1993-05-25 1998-04-16 세끼모또 타다히로 Substrate circuit
US5446367A (en) 1993-05-25 1995-08-29 Micron Semiconductor, Inc. Reducing current supplied to an integrated circuit
JPH0721790A (en) 1993-07-05 1995-01-24 Mitsubishi Electric Corp Semiconductor integrated circuit
US5930638A (en) 1993-07-12 1999-07-27 Peregrine Semiconductor Corp. Method of making a low parasitic resistor on ultrathin silicon on insulator
US5863823A (en) 1993-07-12 1999-01-26 Peregrine Semiconductor Corporation Self-aligned edge control in silicon on insulator
US5973382A (en) 1993-07-12 1999-10-26 Peregrine Semiconductor Corporation Capacitor on ultrathin semiconductor on insulator
US5572040A (en) 1993-07-12 1996-11-05 Peregrine Semiconductor Corporation High-frequency wireless communication system on a single ultrathin silicon on sapphire chip
US5416043A (en) 1993-07-12 1995-05-16 Peregrine Semiconductor Corporation Minimum charge FET fabricated on an ultrathin silicon on sapphire wafer
US5422586A (en) 1993-09-10 1995-06-06 Intel Corporation Apparatus for a two phase bootstrap charge pump
US5442586A (en) 1993-09-10 1995-08-15 Intel Corporation Method and apparatus for controlling the output current provided by a charge pump circuit
JP3362931B2 (en) 1993-09-30 2003-01-07 ソニー株式会社 Attenuator circuit
US5349306A (en) 1993-10-25 1994-09-20 Teledyne Monolithic Microwave Apparatus and method for high performance wide-band power amplifier monolithic microwave integrated circuits
US5965452A (en) 1996-07-09 1999-10-12 Nanogen, Inc. Multiplexed active biologic array
JP3488730B2 (en) 1993-11-05 2004-01-19 株式会社ルネサステクノロジ Semiconductor integrated circuit device
KR0169157B1 (en) 1993-11-29 1999-02-01 기다오까 다까시 Semiconductor circuit and mos-dram
US5375257A (en) 1993-12-06 1994-12-20 Raytheon Company Microwave switch
US5493249A (en) 1993-12-06 1996-02-20 Micron Technology, Inc. System powered with inter-coupled charge pumps
JP3417630B2 (en) 1993-12-17 2003-06-16 株式会社日立製作所 Semiconductor integrated circuit device, flash memory and nonvolatile storage device
JPH07211916A (en) 1994-01-19 1995-08-11 Sony Corp Transistor element and its manufacture
JP3085073B2 (en) 1994-01-24 2000-09-04 富士通株式会社 Static RAM
US5452473A (en) 1994-02-28 1995-09-19 Qualcomm Incorporated Reverse link, transmit power correction and limitation in a radiotelephone system
US5553295A (en) 1994-03-23 1996-09-03 Intel Corporation Method and apparatus for regulating the output voltage of negative charge pumps
US5475335A (en) 1994-04-01 1995-12-12 National Semiconductor Corporation High voltage cascaded charge pump
CN1136529C (en) 1994-05-31 2004-01-28 夏普株式会社 Sampling circuit, signal amplifier, and image display
US5442327A (en) 1994-06-21 1995-08-15 Motorola, Inc. MMIC tunable biphase modulator
US5594371A (en) 1994-06-28 1997-01-14 Nippon Telegraph And Telephone Corporation Low voltage SOI (Silicon On Insulator) logic circuit
US5405795A (en) 1994-06-29 1995-04-11 International Business Machines Corporation Method of forming a SOI transistor having a self-aligned body contact
US5677649A (en) 1994-08-17 1997-10-14 Micron Technology, Inc. Frequency-variable oscillator controlled high efficiency charge pump
JP3169775B2 (en) 1994-08-29 2001-05-28 株式会社日立製作所 Semiconductor circuit, switch and communication device using the same
US5559368A (en) 1994-08-30 1996-09-24 The Regents Of The University Of California Dynamic threshold voltage mosfet having gate to body connection for ultra-low voltage operation
EP0700169B1 (en) 1994-08-30 2003-03-12 Matsushita Electric Industrial Co., Ltd. Transmit-receive switch circuit for radiocommunication apparatus
JPH08148949A (en) 1994-11-18 1996-06-07 Fujitsu Ltd High frequency amplifier
US5630223A (en) * 1994-12-07 1997-05-13 American Nucleonics Corporation Adaptive method and apparatus for eliminating interference between radio transceivers
US5903178A (en) 1994-12-16 1999-05-11 Matsushita Electronics Corporation Semiconductor integrated circuit
JPH08204528A (en) 1995-01-23 1996-08-09 Sony Corp Switch circuit and composite switch circuit
JPH08204530A (en) 1995-01-23 1996-08-09 Sony Corp Switch circuit
JP3175521B2 (en) 1995-01-27 2001-06-11 日本電気株式会社 Silicon-on-insulator semiconductor device and bias voltage generation circuit
US5670907A (en) 1995-03-14 1997-09-23 Lattice Semiconductor Corporation VBB reference for pumped substrates
JP3085130B2 (en) 1995-03-22 2000-09-04 日本電気株式会社 Driver circuit
US5672992A (en) 1995-04-11 1997-09-30 International Rectifier Corporation Charge pump circuit for high side switch
US5821769A (en) 1995-04-21 1998-10-13 Nippon Telegraph And Telephone Corporation Low voltage CMOS logic circuit with threshold voltage control
JP3441236B2 (en) 1995-04-24 2003-08-25 ソニー株式会社 Semiconductor integrated circuit device
DE69615914T2 (en) 1995-05-16 2002-04-04 Matsushita Electric Ind Co Ltd Radio transmission device for time division multiple access system
US5889428A (en) 1995-06-06 1999-03-30 Ramtron International Corporation Low loss, regulated charge pump with integrated ferroelectric capacitors
US5591650A (en) 1995-06-08 1997-01-07 Taiwan Semiconductor Manufacturing Company Ltd. Method of making a body contacted SOI MOSFET
JP2770846B2 (en) 1995-06-16 1998-07-02 日本電気株式会社 FET switch circuit
US5576647A (en) 1995-06-22 1996-11-19 Marvell Technology Group, Ltd. Charge pump for phase lock loop
US5694308A (en) 1995-07-03 1997-12-02 Motorola, Inc. Method and apparatus for regulated low voltage charge pump
JPH0927736A (en) 1995-07-13 1997-01-28 Japan Radio Co Ltd Fet switch
US5519360A (en) 1995-07-24 1996-05-21 Micron Technology, Inc. Ring oscillator enable circuit with immediate shutdown
JP3332194B2 (en) 1995-08-10 2002-10-07 ソニー株式会社 Switch semiconductor integrated circuit and communication terminal device
JP3568644B2 (en) 1995-09-01 2004-09-22 シャープ株式会社 Liquid crystal display device and driving method thereof
JP3249393B2 (en) 1995-09-28 2002-01-21 株式会社東芝 Switch circuit
US5698877A (en) 1995-10-31 1997-12-16 Gonzalez; Fernando Charge-pumping to increase electron collection efficiency
US5793246A (en) 1995-11-08 1998-08-11 Altera Corporation High voltage pump scheme incorporating an overlapping clock
JP3561060B2 (en) 1995-12-08 2004-09-02 三菱電機株式会社 Negative voltage generation circuit
US5892400A (en) 1995-12-15 1999-04-06 Anadigics, Inc. Amplifier using a single polarity power supply and including depletion mode FET and negative voltage generator
FR2742942B1 (en) 1995-12-26 1998-01-16 Sgs Thomson Microelectronics HIGH VOLTAGE SLOT GENERATOR
JP3031227B2 (en) 1995-12-27 2000-04-10 日本電気株式会社 Semiconductor switch
US5681761A (en) 1995-12-28 1997-10-28 Philips Electronics North America Corporation Microwave power SOI-MOSFET with high conductivity metal gate
JPH09200021A (en) 1996-01-22 1997-07-31 Mitsubishi Electric Corp Integrated circuit
US5917362A (en) 1996-01-29 1999-06-29 Sony Corporation Switching circuit
US5777530A (en) 1996-01-31 1998-07-07 Matsushita Electric Industrial Co., Ltd. Switch attenuator
JP3759648B2 (en) 1996-03-04 2006-03-29 株式会社ルネサステクノロジ Semiconductor memory device
US5734291A (en) 1996-03-11 1998-03-31 Telcom Semiconductor, Inc. Power saving technique for battery powered devices
JP3347571B2 (en) 1996-03-12 2002-11-20 富士通株式会社 Radar equipment
JP3484462B2 (en) 1996-04-11 2004-01-06 株式会社ルネサステクノロジ Method for estimating lifetime of floating SOI-MOSFET
JP3732884B2 (en) 1996-04-22 2006-01-11 株式会社ルネサステクノロジ Internal power supply voltage generation circuit, internal voltage generation circuit, and semiconductor device
US5689144A (en) 1996-05-15 1997-11-18 Siliconix Incorporated Four-terminal power MOSFET switch having reduced threshold voltage and on-resistance
US5821575A (en) 1996-05-20 1998-10-13 Digital Equipment Corporation Compact self-aligned body contact silicon-on-insulator transistor
JPH09326642A (en) 1996-06-06 1997-12-16 Mitsubishi Electric Corp Integrated circuit device
JP3082671B2 (en) 1996-06-26 2000-08-28 日本電気株式会社 Transistor element and method of manufacturing the same
US5767549A (en) 1996-07-03 1998-06-16 International Business Machines Corporation SOI CMOS structure
US5818289A (en) 1996-07-18 1998-10-06 Micron Technology, Inc. Clocking scheme and charge transfer switch for increasing the efficiency of a charge pump or other circuit
US5874849A (en) 1996-07-19 1999-02-23 Texas Instruments Incorporated Low voltage, high current pump for flash memory
KR100418001B1 (en) 1996-08-05 2004-02-11 미쓰비시덴키 가부시키가이샤 High-frequency integrated circuit for high-frequency radio transmitter-receiver suppressed in influence of high-frequency power leakage
JPH1079467A (en) 1996-09-04 1998-03-24 Mitsubishi Electric Corp Semiconductor device
US5874836A (en) 1996-09-06 1999-02-23 International Business Machines Corporation High reliability I/O stacked fets
JP3689197B2 (en) 1996-09-06 2005-08-31 三菱電機株式会社 Level shift circuit
JPH1093471A (en) 1996-09-11 1998-04-10 Murata Mfg Co Ltd Signal changeover switch
US5774411A (en) 1996-09-12 1998-06-30 International Business Machines Corporation Methods to enhance SOI SRAM cell stability
JPH10150204A (en) 1996-09-19 1998-06-02 Toshiba Corp Semiconductor device and its manufacture
US5818099A (en) 1996-10-03 1998-10-06 International Business Machines Corporation MOS high frequency switch circuit using a variable well bias
JP3195256B2 (en) 1996-10-24 2001-08-06 株式会社東芝 Semiconductor integrated circuit
US5920233A (en) 1996-11-18 1999-07-06 Peregrine Semiconductor Corp. Phase locked loop including a sampling circuit for reducing spurious side bands
US6188590B1 (en) 1996-12-18 2001-02-13 Macronix International Co., Ltd. Regulator system for charge pump circuits
US5753955A (en) 1996-12-19 1998-05-19 Honeywell Inc. MOS device having a gate to body connection with a body injection current limiting feature for use on silicon on insulator substrates
IT1290168B1 (en) 1996-12-23 1998-10-19 Consorzio Eagle NEGATIVE VOLTAGE CHARGE PUMP FOR FLASH EEPROM MEMORIES
JP3545583B2 (en) 1996-12-26 2004-07-21 株式会社ルネサステクノロジ Semiconductor device and manufacturing method thereof
JPH10201222A (en) 1996-12-27 1998-07-31 Fujitsu Ltd Voltage boosting circuit and semiconductor device using the same
JP3357807B2 (en) 1997-01-13 2002-12-16 株式会社東芝 Receiver and phase shifter
EP0855788B1 (en) 1997-01-23 2005-06-22 STMicroelectronics S.r.l. NMOS negative charge pump
US5821800A (en) 1997-02-11 1998-10-13 Advanced Micro Devices, Inc. High-voltage CMOS level shifter
JPH10242829A (en) 1997-02-24 1998-09-11 Sanyo Electric Co Ltd Switch circuit device
US5912560A (en) 1997-02-25 1999-06-15 Waferscale Integration Inc. Charge pump circuit for voltage boosting in integrated semiconductor circuits
JP3378457B2 (en) 1997-02-26 2003-02-17 株式会社東芝 Semiconductor device
JP2964975B2 (en) 1997-02-26 1999-10-18 日本電気株式会社 High frequency switch circuit
JP3441330B2 (en) 1997-02-28 2003-09-02 株式会社東芝 Semiconductor device and manufacturing method thereof
US5818766A (en) 1997-03-05 1998-10-06 Integrated Silicon Solution Inc. Drain voltage pump circuit for nonvolatile memory device
US5883541A (en) 1997-03-05 1999-03-16 Nec Corporation High frequency switching circuit
JP3715066B2 (en) 1997-03-25 2005-11-09 三菱電機株式会社 Current mode logic circuit
US5920093A (en) 1997-04-07 1999-07-06 Motorola, Inc. SOI FET having gate sub-regions conforming to t-shape
US5880620A (en) 1997-04-22 1999-03-09 Xilinx, Inc. Pass gate circuit with body bias control
US6160292A (en) 1997-04-23 2000-12-12 International Business Machines Corporation Circuit and methods to improve the operation of SOI devices
JP3258930B2 (en) 1997-04-24 2002-02-18 東芝マイクロエレクトロニクス株式会社 Transmission gate
US6033974A (en) 1997-05-12 2000-03-07 Silicon Genesis Corporation Method for controlled cleaving process
US6245161B1 (en) 1997-05-12 2001-06-12 Silicon Genesis Corporation Economical silicon-on-silicon hybrid wafer assembly
JPH10335901A (en) 1997-06-04 1998-12-18 Nippon Telegr & Teleph Corp <Ntt> Semiconductor switch
US5784311A (en) 1997-06-13 1998-07-21 International Business Machines Corporation Two-device memory cell on SOI for merged logic and memory applications
US6218892B1 (en) 1997-06-20 2001-04-17 Intel Corporation Differential circuits employing forward body bias
US6411156B1 (en) 1997-06-20 2002-06-25 Intel Corporation Employing transistor body bias in controlling chip parameters
JPH1126776A (en) 1997-07-02 1999-01-29 Mitsubishi Electric Corp Dual gate fet and high frequency circuit using the same
US5909618A (en) 1997-07-08 1999-06-01 Micron Technology, Inc. Method of making memory cell with vertical transistor and buried word and body lines
US6122185A (en) 1997-07-22 2000-09-19 Seiko Instruments R&D Center Inc. Electronic apparatus
US6081165A (en) 1997-07-25 2000-06-27 Texas Instruments Incorporated Ring oscillator
AU9296098A (en) 1997-08-29 1999-03-16 Sharon N. Farrens In situ plasma wafer bonding method
JP3144477B2 (en) 1997-09-01 2001-03-12 日本電気株式会社 Switch circuit and semiconductor device
US6130570A (en) 1997-09-18 2000-10-10 Samsung Electronics Co., Ltd. MESFET circuit utilizing only positive power supplies
JPH1196761A (en) 1997-09-25 1999-04-09 Oki Micro Design Miyazaki Co Ltd Semiconductor integrated circuit
JP3811557B2 (en) 1997-10-21 2006-08-23 松下電器産業株式会社 Multiple frequency band high efficiency linear power amplifier
JPH11136111A (en) 1997-10-30 1999-05-21 Sony Corp High frequency circuit
JPH11163704A (en) 1997-11-25 1999-06-18 Sharp Corp High frequency switch circuit
JP2978865B2 (en) 1997-11-28 1999-11-15 新潟日本電気株式会社 Image forming device
JP3542476B2 (en) 1997-12-01 2004-07-14 三菱電機株式会社 CMOS circuit with SOI structure
JP3657412B2 (en) 1997-12-01 2005-06-08 日本電信電話株式会社 High frequency circuit
DE19800647C1 (en) 1998-01-09 1999-05-27 Siemens Ag SOI HV switch with FET structure
JP3711193B2 (en) 1998-01-16 2005-10-26 三菱電機株式会社 Transmission / reception switching circuit
US6020848A (en) 1998-01-27 2000-02-01 The Boeing Company Monolithic microwave integrated circuits for use in low-cost dual polarization phased-array antennas
JPH11214662A (en) 1998-01-29 1999-08-06 Mitsubishi Electric Corp Semiconductor device
US5945879A (en) 1998-02-05 1999-08-31 The Regents Of The University Of California Series-connected microwave power amplifiers with voltage feedback and method of operation for the same
US5969571A (en) 1998-02-17 1999-10-19 Harris Corporation Pulse duration amplifier system
US6215360B1 (en) 1998-02-23 2001-04-10 Motorola, Inc. Semiconductor chip for RF transceiver and power output circuit therefor
US5990580A (en) 1998-03-05 1999-11-23 The Whitaker Corporation Single pole double throw switch
US6365488B1 (en) 1998-03-05 2002-04-02 Industrial Technology Research Institute Method of manufacturing SOI wafer with buried layer
JPH11274804A (en) 1998-03-19 1999-10-08 Sharp Corp High frequency switch
US6137367A (en) 1998-03-24 2000-10-24 Amcom Communications, Inc. High power high impedance microwave devices for power applications
US6239657B1 (en) 1998-03-27 2001-05-29 Rohde & Schwarz Gmbh & Co. Kg Method and device for measuring the distortion of a high-frequency power amplifier and method and means for automatically equalizing a high-frequency power amplifier
KR100259097B1 (en) 1998-04-02 2000-06-15 김영환 Semiconductor device and method for fabricating the same
US6064253A (en) 1998-04-20 2000-05-16 Endgate Corporation Multiple stage self-biasing RF transistor circuit
JP3534624B2 (en) 1998-05-01 2004-06-07 沖電気工業株式会社 Method for manufacturing semiconductor device
DE59904377D1 (en) 1998-06-04 2003-04-03 Infineon Technologies Ag LOGIC GATE
US6249027B1 (en) 1998-06-08 2001-06-19 Sun Microsystems, Inc. Partially depleted SOI device having a dedicated single body bias means
JPH11355123A (en) 1998-06-11 1999-12-24 Mitsubishi Electric Corp Buffer using dynamic threshold value mos transistor
KR100268887B1 (en) 1998-06-17 2000-10-16 김영환 Charge pump circuit
US5986518A (en) 1998-06-30 1999-11-16 Motorola, Inc. Distributed MMIC active quadrature hybrid and method for providing in-phase and quadrature-phase signals
JP2000022160A (en) 1998-07-06 2000-01-21 Hitachi Ltd Semiconductor integrated circuit and fabrication thereof
US6218890B1 (en) 1998-07-14 2001-04-17 Sanyo Electric Co., Ltd. Switching circuit device and semiconductor device
US6387739B1 (en) 1998-08-07 2002-05-14 International Business Machines Corporation Method and improved SOI body contact structure for transistors
JP4360702B2 (en) 1998-08-07 2009-11-11 株式会社ルネサステクノロジ Semiconductor device
JP3280623B2 (en) 1998-08-11 2002-05-13 沖電気工業株式会社 Drive control circuit for charge pump circuit
DE69925078T2 (en) 1998-08-29 2006-03-09 International Business Machines Corp. SOI transistor with a substrate contact and method for its production
US5959335A (en) 1998-09-23 1999-09-28 International Business Machines Corporation Device design for enhanced avalanche SOI CMOS
US6061267A (en) 1998-09-28 2000-05-09 Texas Instruments Incorporated Memory circuits, systems, and methods with cells using back bias to control the threshold voltage of one or more corresponding cell transistors
US6100564A (en) 1998-09-30 2000-08-08 International Business Machines Corporation SOI pass-gate disturb solution
US6356536B1 (en) 1998-09-30 2002-03-12 Ericsson Inc. Protective and decoupling shunt switch at LNA input for TDMA/TDD transceivers
US6191653B1 (en) 1998-11-18 2001-02-20 Ericsson Inc. Circuit and method for linearizing amplitude modulation in a power amplifier
US6281737B1 (en) 1998-11-20 2001-08-28 International Business Machines Corporation Method and apparatus for reducing parasitic bipolar current in a silicon-on-insulator transistor
JP3408762B2 (en) 1998-12-03 2003-05-19 シャープ株式会社 Semiconductor device having SOI structure and method of manufacturing the same
JP2000183353A (en) 1998-12-14 2000-06-30 Mitsubishi Electric Corp Semiconductor integrated circuit
JP2000188501A (en) 1998-12-22 2000-07-04 Mitsubishi Electric Corp Semiconductor switch
JP4540146B2 (en) 1998-12-24 2010-09-08 ルネサスエレクトロニクス株式会社 Manufacturing method of semiconductor device
JP2000208614A (en) 1999-01-14 2000-07-28 Mitsubishi Electric Corp Semiconductor device and production thereof
US6107885A (en) 1999-01-25 2000-08-22 General Instrument Corporation Wideband linear GaAsFET ternate cascode amplifier
US6188247B1 (en) 1999-01-29 2001-02-13 International Business Machines Corporation Method and apparatus for elimination of parasitic bipolar action in logic circuits for history removal under stack contention including complementary oxide semiconductor (CMOS) silicon on insulator (SOI) elements
JP2000223713A (en) 1999-02-02 2000-08-11 Oki Electric Ind Co Ltd Semiconductor element and its manufacture
US6300796B1 (en) 1999-02-19 2001-10-09 Zilog, Inc. High voltage PMOS level shifter
JP2000277703A (en) 1999-03-25 2000-10-06 Sanyo Electric Co Ltd Switch circuit device
JP2000294786A (en) 1999-04-05 2000-10-20 Nippon Telegr & Teleph Corp <Ntt> High-frequency switch
AUPP964499A0 (en) 1999-04-08 1999-04-29 Bhp Steel (Jla) Pty Limited Casting strip
US6239649B1 (en) 1999-04-20 2001-05-29 International Business Machines Corporation Switched body SOI (silicon on insulator) circuits and fabrication method therefor
US6171965B1 (en) 1999-04-21 2001-01-09 Silicon Genesis Corporation Treatment method of cleaved film for the manufacture of substrates
JP2000311986A (en) 1999-04-27 2000-11-07 Mitsubishi Electric Corp Digital high frequency analog hybrid ic chip, ic package and digital high frequency analog hybrid ic
US6172378B1 (en) 1999-05-03 2001-01-09 Silicon Wave, Inc. Integrated circuit varactor having a wide capacitance range
US6118343A (en) 1999-05-10 2000-09-12 Tyco Electronics Logistics Ag Power Amplifier incorporating single drain switch and single negative voltage generator
US6111778A (en) 1999-05-10 2000-08-29 International Business Machines Corporation Body contacted dynamic memory
US6871059B1 (en) 1999-06-16 2005-03-22 Skyworks Solutions, Inc. Passive balun FET mixer
JP4138158B2 (en) 1999-06-21 2008-08-20 セイコーエプソン株式会社 SOI structure MOS field effect transistor and method of manufacturing the same
US7202734B1 (en) 1999-07-06 2007-04-10 Frederick Herbert Raab Electronically tuned power amplifier
US6320225B1 (en) 1999-07-13 2001-11-20 International Business Machines Corporation SOI CMOS body contact through gate, self-aligned to source- drain diffusions
US6169444B1 (en) 1999-07-15 2001-01-02 Maxim Integrated Products, Inc. Pulse frequency operation of regulated charge pumps
JP3589102B2 (en) 1999-07-27 2004-11-17 セイコーエプソン株式会社 SOI structure MOS field effect transistor and method of manufacturing the same
EP1939932A1 (en) 1999-08-10 2008-07-02 Silicon Genesis Corporation A substrate comprising a stressed silicon germanium cleave layer
US6396352B1 (en) 1999-08-27 2002-05-28 Texas Instruments Incorporated CMOS power amplifier for driving low impedance loads
JP4207328B2 (en) 1999-09-14 2009-01-14 ソニー株式会社 Antenna switching circuit and communication device using the same
JP3926975B2 (en) 1999-09-22 2007-06-06 株式会社東芝 Stacked MOS transistor protection circuit
JP2001089448A (en) 1999-09-24 2001-04-03 Yamanouchi Pharmaceut Co Ltd Amide derivative
US6288458B1 (en) 1999-09-30 2001-09-11 Honeywell International Inc. Power stealing solid state switch
JP3587443B2 (en) 1999-10-19 2004-11-10 日本電信電話株式会社 Selection circuit and logic circuit using the same
US7082293B1 (en) 1999-10-21 2006-07-25 Broadcom Corporation Adaptive radio transceiver with CMOS offset PLL
KR100343288B1 (en) 1999-10-25 2002-07-15 윤종용 An SOI semiconductor integrated circuit for eliminating floating body effect in SOI MOSFETs and method of fabricating the same
US6521959B2 (en) 1999-10-25 2003-02-18 Samsung Electronics Co., Ltd. SOI semiconductor integrated circuit for eliminating floating body effects in SOI MOSFETs and method of fabricating the same
FR2800532B1 (en) 1999-10-28 2002-01-04 Pixtech Sa VERY HIGH VOLTAGE SWITCH
KR100350575B1 (en) 1999-11-05 2002-08-28 주식회사 하이닉스반도체 Silicon on insulator having source-body-substrate contact and method for fabricating the same
JP3770008B2 (en) 1999-11-05 2006-04-26 株式会社日立製作所 Semiconductor power converter
US6429723B1 (en) 1999-11-18 2002-08-06 Texas Instruments Incorporated Integrated circuit with charge pump and method
JP2001157487A (en) 1999-11-26 2001-06-08 Nissan Motor Co Ltd Controller for electric rotating machine
JP3520973B2 (en) 1999-11-30 2004-04-19 Necエレクトロニクス株式会社 Semiconductor device
US6396325B2 (en) 1999-12-03 2002-05-28 Fairchild Semiconductor Corporation High frequency MOSFET switch
JP3608456B2 (en) 1999-12-08 2005-01-12 セイコーエプソン株式会社 Manufacturing method of SOI structure MIS field effect transistor
US6449465B1 (en) 1999-12-20 2002-09-10 Motorola, Inc. Method and apparatus for linear amplification of a radio frequency signal
US6684065B2 (en) 1999-12-20 2004-01-27 Broadcom Corporation Variable gain amplifier for low voltage applications
JP2001186007A (en) 1999-12-24 2001-07-06 Sharp Corp Metal oxide film semiconductor transistor circuit and semiconductor integrated circuit using it
US6684055B1 (en) 2000-01-18 2004-01-27 Otis Elevator Company System for remotely communicating voice and data to and from an elevator controller
US6201761B1 (en) 2000-01-26 2001-03-13 Advanced Micro Devices, Inc. Field effect transistor with controlled body bias
US6504212B1 (en) 2000-02-03 2003-01-07 International Business Machines Corporation Method and apparatus for enhanced SOI passgate operations
US6222394B1 (en) 2000-02-03 2001-04-24 International Business Machines Corporation SOI CMOS sense amplifier with enhanced matching characteristics and sense point tolerance
US6429632B1 (en) 2000-02-11 2002-08-06 Micron Technology, Inc. Efficient CMOS DC-DC converters based on switched capacitor power supplies with inductive current limiters
JP3637830B2 (en) 2000-02-22 2005-04-13 株式会社村田製作所 SPDT switch and communication device using the same
WO2001067602A2 (en) 2000-03-03 2001-09-13 Alpha Industries, Inc. Electronic switch
US6433587B1 (en) 2000-03-17 2002-08-13 International Business Machines Corporation SOI CMOS dynamic circuits having threshold voltage control
JP2001274264A (en) 2000-03-24 2001-10-05 Mitsubishi Electric Corp Semiconductor device and manufacturing method therefor
JP2001274265A (en) 2000-03-28 2001-10-05 Mitsubishi Electric Corp Semiconductor device
JP2001284576A (en) 2000-03-30 2001-10-12 Toshiba Corp High electron mobility transistor and method of manufacturing the same
JP3504212B2 (en) 2000-04-04 2004-03-08 シャープ株式会社 Semiconductor device with SOI structure
US6801076B1 (en) 2000-04-28 2004-10-05 Micron Technology, Inc. High output high efficiency low voltage charge pump
US6466082B1 (en) 2000-05-17 2002-10-15 Advanced Micro Devices, Inc. Circuit technique to deal with floating body effects
EP1156635B1 (en) 2000-05-17 2006-10-18 Alcatel Multiplier arrangement, signal modulator and transmitter
JP3696125B2 (en) 2000-05-24 2005-09-14 株式会社東芝 Potential detection circuit and semiconductor integrated circuit
US6297696B1 (en) 2000-06-15 2001-10-02 International Business Machines Corporation Optimized power amplifier
JP2002033399A (en) 2000-07-13 2002-01-31 Toshiba Corp Semiconductor integrated circuit and its manufacturing method
US6461902B1 (en) 2000-07-18 2002-10-08 Institute Of Microelectronics RF LDMOS on partial SOI substrate
JP2002033484A (en) 2000-07-18 2002-01-31 Mitsubishi Electric Corp Semiconductor device
JP2002043862A (en) 2000-07-26 2002-02-08 Yrp Kokino Idotai Tsushin Kenkyusho:Kk Pre-distortion circuit
AU2001283169A1 (en) 2000-08-10 2002-02-25 University Of Southern California Multiphase resonant pulse generators
US6816016B2 (en) 2000-08-10 2004-11-09 Tropian, Inc. High-efficiency modulating RF amplifier
KR100381262B1 (en) 2000-08-10 2003-04-26 엘지전자 주식회사 Total Internal Reflection Prism System using the Digital Micromirror Device
TW501227B (en) 2000-08-11 2002-09-01 Samsung Electronics Co Ltd SOI MOSFET having body contact for preventing floating body effect and method of fabricating the same
US6816000B2 (en) 2000-08-18 2004-11-09 Texas Instruments Incorporated Booster circuit
US6249446B1 (en) 2000-08-23 2001-06-19 Intersil Americas Inc. Cascadable, high efficiency charge pump circuit and related methods
US6310508B1 (en) 2000-08-24 2001-10-30 Agilent Technologies, Inc. High frequency switch
US6512269B1 (en) 2000-09-07 2003-01-28 International Business Machines Corporation High-voltage high-speed SOI MOSFET
JP3666805B2 (en) 2000-09-19 2005-06-29 ローム株式会社 DC / DC converter
US6496074B1 (en) 2000-09-28 2002-12-17 Koninklijke Philips Electronics N.V. Cascode bootstrapped analog power amplifier circuit
JP2002111449A (en) 2000-09-29 2002-04-12 Mitsubishi Electric Corp Voltage control oscillating circuit and phase synchronization loop circuit provided with the same
US6559689B1 (en) 2000-10-02 2003-05-06 Allegro Microsystems, Inc. Circuit providing a control voltage to a switch and including a capacitor
US6978437B1 (en) 2000-10-10 2005-12-20 Toppan Photomasks, Inc. Photomask for eliminating antenna effects in an integrated circuit and integrated circuit manufacture with same
US6947720B2 (en) 2000-10-17 2005-09-20 Rf Micro Devices, Inc. Low noise mixer circuit with improved gain
US6509799B1 (en) 2000-11-09 2003-01-21 Intel Corporation Electrically tuned integrated amplifier for wireless communications
US6831847B2 (en) 2000-11-20 2004-12-14 Artesyn Technologies, Inc. Synchronous rectifier drive circuit and power supply including same
US6711397B1 (en) 2000-11-20 2004-03-23 Ami Semiconductor, Inc. Structures and methods for direct conversion from radio frequency modulated signals to baseband signals
US6411531B1 (en) 2000-11-21 2002-06-25 Linear Technology Corporation Charge pump DC/DC converters with reduced input noise
JP2002164441A (en) 2000-11-27 2002-06-07 Matsushita Electric Ind Co Ltd High frequency switch circuit device
JP4434474B2 (en) 2000-11-29 2010-03-17 Necエレクトロニクス株式会社 MOS transistor simulation test method
US6518829B2 (en) 2000-12-04 2003-02-11 United Memories, Inc. Driver timing and circuit technique for a low noise charge pump circuit
JP4138229B2 (en) 2000-12-07 2008-08-27 新日本無線株式会社 Switch semiconductor integrated circuit
US6636119B2 (en) 2000-12-21 2003-10-21 Koninklijke Philips Electronics N.V. Compact cascode radio frequency CMOS power amplifier
US6380802B1 (en) 2000-12-29 2002-04-30 Ericsson Inc. Transmitter using input modulation for envelope restoration scheme for linear high-efficiency power amplification
AU2002240055A1 (en) 2001-01-25 2002-08-06 Regents Of The University Of Minnesota High linearity circuits and methods regarding same
US6677641B2 (en) 2001-10-17 2004-01-13 Fairchild Semiconductor Corporation Semiconductor structure with improved smaller forward voltage loss and higher blocking capability
US7345342B2 (en) 2001-01-30 2008-03-18 Fairchild Semiconductor Corporation Power semiconductor devices and methods of manufacture
US6784813B2 (en) 2001-02-12 2004-08-31 Matrics, Inc. Method, system, and apparatus for remote data calibration of a RFID tag population
JP2002246942A (en) 2001-02-19 2002-08-30 Sony Corp Switching device and portable communication terminal device
JP3616343B2 (en) 2001-03-27 2005-02-02 松下電器産業株式会社 High frequency switch circuit and communication terminal device using the same
KR100363554B1 (en) 2001-03-30 2002-12-05 삼성전자 주식회사 Soi type semiconductor device and method of forming the same
US6433589B1 (en) 2001-04-12 2002-08-13 International Business Machines Corporation Sense amplifier and method for sensing signals in a silicon-on-insulator integrated circuit
US6670655B2 (en) 2001-04-18 2003-12-30 International Business Machines Corporation SOI CMOS device with body to gate connection
TW530455B (en) 2001-04-19 2003-05-01 Sanyo Electric Co Switch circuit device of compound semiconductor
DE60228914D1 (en) 2001-05-25 2008-10-30 Toshiba Kk High frequency switching device with inserted inverter circuit
TWI230392B (en) 2001-06-18 2005-04-01 Innovative Silicon Sa Semiconductor device
US6819938B2 (en) 2001-06-26 2004-11-16 Qualcomm Incorporated System and method for power control calibration and a wireless communication device
US6646305B2 (en) 2001-07-25 2003-11-11 International Business Machines Corporation Grounded body SOI SRAM cell
JP2003051751A (en) 2001-08-07 2003-02-21 Hitachi Ltd Electronic component and wireless communication device
KR100906356B1 (en) 2001-08-10 2009-07-06 히타치 긴조쿠 가부시키가이샤 Bypass filter
JP3986780B2 (en) 2001-08-17 2007-10-03 三菱電機株式会社 Complementary push-pull amplifier
US6698082B2 (en) 2001-08-28 2004-03-02 Texas Instruments Incorporated Micro-electromechanical switch fabricated by simultaneous formation of a resistor and bottom electrode
US7071792B2 (en) 2001-08-29 2006-07-04 Tropian, Inc. Method and apparatus for impedance matching in an amplifier using lumped and distributed inductance
US6486511B1 (en) 2001-08-30 2002-11-26 Northrop Grumman Corporation Solid state RF switch with high cutoff frequency
US6414863B1 (en) 2001-08-30 2002-07-02 Texas Instruments Incorporated Frequency control circuit for unregulated inductorless DC/DC converters
JP2003101407A (en) 2001-09-21 2003-04-04 Sharp Corp Semiconductor integrated circuit
US6804502B2 (en) 2001-10-10 2004-10-12 Peregrine Semiconductor Corporation Switch circuit and method of switching radio frequency signals
US7796969B2 (en) 2001-10-10 2010-09-14 Peregrine Semiconductor Corporation Symmetrically and asymmetrically stacked transistor group RF switch
US6714065B2 (en) 2001-10-26 2004-03-30 Renesas Technology Corp. Semiconductor device including power supply circuit conducting charge pumping operation
JP2003143004A (en) 2001-11-06 2003-05-16 Matsushita Electric Ind Co Ltd Level shifter circuit
DE60134477D1 (en) 2001-11-09 2008-07-31 St Microelectronics Srl Charge pump circuit with low power
US6971004B1 (en) 2001-11-19 2005-11-29 Cypress Semiconductor Corp. System and method of dynamically reconfiguring a programmable integrated circuit
JP2003167615A (en) 2001-11-30 2003-06-13 Toyota Motor Corp Production plan making device and method
US6717458B1 (en) 2001-12-03 2004-04-06 National Semiconductor Corporation Method and apparatus for a DC-DC charge pump voltage converter-regulator circuit
JP3813869B2 (en) 2001-12-20 2006-08-23 松下電器産業株式会社 Field effect transistor switch circuit
US6608789B2 (en) 2001-12-21 2003-08-19 Motorola, Inc. Hysteresis reduced sense amplifier and method of operation
JP2003198248A (en) 2001-12-26 2003-07-11 Sharp Corp Antenna-integrated package
US6608785B2 (en) 2002-01-07 2003-08-19 International Business Machines Corporation Method and apparatus to ensure functionality and timing robustness in SOI circuits
US20030160515A1 (en) 2002-01-15 2003-08-28 Luke Yu Controllable broad-spectrum harmonic filter (cbf) for electrical power systems
JP3865689B2 (en) 2002-01-15 2007-01-10 松下電器産業株式会社 Level shift circuit
US6677645B2 (en) 2002-01-31 2004-01-13 International Business Machines Corporation Body contact MOSFET
US6934520B2 (en) 2002-02-21 2005-08-23 Semiconductor Components Industries, L.L.C. CMOS current mode RF detector and method
JP2003318405A (en) 2002-04-25 2003-11-07 Mitsubishi Electric Corp Semiconductor device and manufacturing method therefor
DE10219371B4 (en) 2002-04-30 2006-01-12 Infineon Technologies Ag A signal generating device for a charge pump and integrated circuit provided therewith
JP2003332583A (en) 2002-05-15 2003-11-21 Sony Corp Semiconductor device and its manufacturing method
JP4009553B2 (en) 2002-05-17 2007-11-14 日本電気株式会社 High frequency switch circuit
US6960810B2 (en) 2002-05-30 2005-11-01 Honeywell International Inc. Self-aligned body tie for a partially depleted SOI device structure
JP4262933B2 (en) 2002-05-30 2009-05-13 Necエレクトロニクス株式会社 High frequency circuit element
JP4050096B2 (en) 2002-05-31 2008-02-20 松下電器産業株式会社 High frequency switch circuit and mobile communication terminal device
GB2412513B (en) 2002-05-31 2006-03-08 Renesas Tech Corp Apparatus for radio telecommunication system and method of building up output power
US7189606B2 (en) 2002-06-05 2007-03-13 Micron Technology, Inc. Method of forming fully-depleted (FD) SOI MOSFET access transistor
US6933744B2 (en) 2002-06-11 2005-08-23 The Regents Of The University Of Michigan Low-leakage integrated circuits and dynamic logic circuits
JP4137528B2 (en) 2002-06-13 2008-08-20 セイコーインスツル株式会社 Power conversion circuit
US6642578B1 (en) 2002-07-22 2003-11-04 Anadigics, Inc. Linearity radio frequency switch with low control voltage
US6891234B1 (en) 2004-01-07 2005-05-10 Acorn Technologies, Inc. Transistor with workfunction-induced charge layer
US7212788B2 (en) 2002-08-13 2007-05-01 Atheros Communications, Inc. Method and apparatus for signal power loss reduction in RF communication systems
US6677803B1 (en) 2002-08-21 2004-01-13 Oki Electric Industry Co., Ltd. Semiconductor integrated circuit device
US7608927B2 (en) 2002-08-29 2009-10-27 Micron Technology, Inc. Localized biasing for silicon on insulator structures
US7092677B1 (en) 2002-09-05 2006-08-15 Analog Devices, Inc. 2V SPDT switch for high power RF wireless applications
US6803680B2 (en) 2002-09-13 2004-10-12 Mia-Com, Inc. Apparatus, methods, and articles of manufacture for a switch having sharpened control voltage
US6788130B2 (en) 2002-09-25 2004-09-07 Texas Instruments Incorporated Efficient charge pump capable of high voltage operation
JP2004147045A (en) 2002-10-24 2004-05-20 Matsushita Electric Ind Co Ltd High-frequency switch
JP3445608B2 (en) 2002-10-25 2003-09-08 株式会社東芝 Digital information management system including video information
JP4052923B2 (en) 2002-10-25 2008-02-27 株式会社ルネサステクノロジ Semiconductor device
JP2004166470A (en) 2002-11-13 2004-06-10 Hitachi Lighting Ltd Inverter system
JP4154578B2 (en) 2002-12-06 2008-09-24 日本電気株式会社 Semiconductor device and manufacturing method thereof
JP2004199950A (en) 2002-12-17 2004-07-15 Shin Kobe Electric Mach Co Ltd Manufacturing method of positive electrode plate for lead-acid storage battery
US7515882B2 (en) 2002-12-17 2009-04-07 Kelcourse Mark F Apparatus, methods and articles of manufacture for a multi-band switch
US20040204013A1 (en) 2002-12-23 2004-10-14 Qing Ma Communication unit and switch unit
JP2004205301A (en) 2002-12-25 2004-07-22 Nec Corp Evaluation device and circuit designing method used therefor
US7132873B2 (en) 2003-01-08 2006-11-07 Emosyn America, Inc. Method and apparatus for avoiding gated diode breakdown in transistor circuits
US6774701B1 (en) 2003-02-19 2004-08-10 Raytheon Company Method and apparatus for electronic switching with low insertion loss and high isolation
US6975271B2 (en) 2003-02-26 2005-12-13 Matsushita Electric Industrial Co., Ltd. Antenna switch module, all-in-one communication module, communication apparatus and method for manufacturing antenna switch module
US6903596B2 (en) 2003-03-17 2005-06-07 Mitsubishi Electric & Electronics U.S.A., Inc. Method and system for impedance matched switching
US6954623B2 (en) 2003-03-18 2005-10-11 Skyworks Solutions, Inc. Load variation tolerant radio frequency (RF) amplifier
JP2004288978A (en) 2003-03-24 2004-10-14 Seiko Epson Corp Semiconductor integrated device
US6825730B1 (en) 2003-03-31 2004-11-30 Applied Micro Circuits Corporation High-performance low-noise charge-pump for voltage controlled oscillator applications
US6897701B2 (en) 2003-05-13 2005-05-24 Texas Instruments Incorporated Method and structure for improving the linearity of MOS switches
US7638841B2 (en) 2003-05-20 2009-12-29 Fairchild Semiconductor Corporation Power semiconductor devices and methods of manufacture
JP2005006072A (en) 2003-06-12 2005-01-06 Matsushita Electric Ind Co Ltd High frequency switch apparatus and semiconductor device
JP2005006143A (en) 2003-06-13 2005-01-06 Matsushita Electric Ind Co Ltd High frequency switch circuit and semiconductor device
US7023260B2 (en) 2003-06-30 2006-04-04 Matrix Semiconductor, Inc. Charge pump circuit incorporating corresponding parallel charge pump stages and method therefor
JP4202852B2 (en) 2003-08-27 2008-12-24 株式会社ルネサステクノロジ Communication electronic parts and transmission / reception switching semiconductor device
DE10340846A1 (en) 2003-09-04 2005-05-04 Infineon Technologies Ag Transistor arrangement for reducing noise, integrated circuit and method for reducing the noise of field effect transistors
US7719343B2 (en) 2003-09-08 2010-05-18 Peregrine Semiconductor Corporation Low noise charge pump method and apparatus
JP2005136948A (en) 2003-10-08 2005-05-26 Renesas Technology Corp Antenna switch circuit
JP4000103B2 (en) 2003-10-09 2007-10-31 三菱電機株式会社 High frequency switch device and high frequency switch structure
US6830963B1 (en) 2003-10-09 2004-12-14 Micron Technology, Inc. Fully depleted silicon-on-insulator CMOS logic
US7045873B2 (en) 2003-12-08 2006-05-16 International Business Machines Corporation Dynamic threshold voltage MOSFET on SOI
US7068096B2 (en) 2003-12-08 2006-06-27 Northrop Grumman Corporation EER modulator with power amplifier having feedback loop providing soft output impedance
US6953738B2 (en) 2003-12-12 2005-10-11 Freescale Semiconductor, Inc. Method and apparatus for forming an SOI body-contacted transistor
DE10358713A1 (en) 2003-12-15 2005-08-11 Infineon Technologies Ag Transistor arrangement for reducing noise, integrated circuit and method for reducing the noise of field effect transistors
US7109532B1 (en) 2003-12-23 2006-09-19 Lee Zachary K High Ion/Ioff SOI MOSFET using body voltage control
JP4024762B2 (en) 2004-01-16 2007-12-19 ユーディナデバイス株式会社 High frequency switch
JP4342970B2 (en) 2004-02-02 2009-10-14 株式会社東芝 Semiconductor memory device and manufacturing method thereof
JP4868433B2 (en) 2004-02-09 2012-02-01 ソニー・エリクソン・モバイルコミュニケーションズ株式会社 Distortion compensation apparatus and power amplification apparatus with distortion compensation function
US7042044B2 (en) 2004-02-18 2006-05-09 Koucheng Wu Nor-type channel-program channel-erase contactless flash memory on SOI
US7072217B2 (en) 2004-02-24 2006-07-04 Micron Technology, Inc. Multi-state memory cell with asymmetric charge trapping
JP2005251931A (en) 2004-03-03 2005-09-15 Seiko Epson Corp Terminating circuit
JP4321359B2 (en) 2004-05-31 2009-08-26 パナソニック株式会社 Semiconductor switch
JP4559772B2 (en) 2004-05-31 2010-10-13 パナソニック株式会社 Switch circuit
EP1774620B1 (en) 2004-06-23 2014-10-01 Peregrine Semiconductor Corporation Integrated rf front end
US7248120B2 (en) 2004-06-23 2007-07-24 Peregrine Semiconductor Corporation Stacked transistor method and apparatus
US7098507B2 (en) 2004-06-30 2006-08-29 Intel Corporation Floating-body dynamic random access memory and method of fabrication in tri-gate technology
JP2006025062A (en) 2004-07-07 2006-01-26 Matsushita Electric Ind Co Ltd High frequency switch circuit
US7738877B2 (en) 2004-07-19 2010-06-15 Cisco Technology, Inc. Wireless network management with antenna control
US20060022526A1 (en) 2004-07-27 2006-02-02 David Cartalade Asymmetric radio-frequency switch
US7391282B2 (en) 2004-11-17 2008-06-24 Matsushita Electric Industrial Co., Ltd. Radio-frequency switch circuit and semiconductor device
DE102004056435A1 (en) 2004-11-23 2006-06-01 Universität Stuttgart Power amplifier for amplifying radio frequency (RF) signals
EP1829229B1 (en) * 2004-12-22 2019-01-23 Nokia Technologies Oy Interoperability improvement between receivers and transmitters in a mobile station
US7546089B2 (en) 2004-12-23 2009-06-09 Triquint Semiconductor, Inc. Switchable directional coupler for use with RF devices
US20060161520A1 (en) 2005-01-14 2006-07-20 Microsoft Corporation System and method for generating alternative search terms
US8081928B2 (en) 2005-02-03 2011-12-20 Peregrine Semiconductor Corporation Canceling harmonics in semiconductor RF switches
US7129545B2 (en) 2005-02-24 2006-10-31 International Business Machines Corporation Charge modulation network for multiple power domains for silicon-on-insulator technology
JP2006332416A (en) 2005-05-27 2006-12-07 Nec Electronics Corp Semiconductor device
US7359677B2 (en) 2005-06-10 2008-04-15 Sige Semiconductor Inc. Device and methods for high isolation and interference suppression switch-filter
KR100603721B1 (en) 2005-06-11 2006-07-24 삼성전자주식회사 Body biasing structuer of soi
US7402850B2 (en) 2005-06-21 2008-07-22 Micron Technology, Inc. Back-side trapped non-volatile memory device
US20080076371A1 (en) 2005-07-11 2008-03-27 Alexander Dribinsky Circuit and method for controlling charge injection in radio frequency switches
US7890891B2 (en) 2005-07-11 2011-02-15 Peregrine Semiconductor Corporation Method and apparatus improving gate oxide reliability by controlling accumulated charge
US7910993B2 (en) 2005-07-11 2011-03-22 Peregrine Semiconductor Corporation Method and apparatus for use in improving linearity of MOSFET's using an accumulated charge sink
US8742502B2 (en) 2005-07-11 2014-06-03 Peregrine Semiconductor Corporation Method and apparatus for use in improving linearity of MOSFETs using an accumulated charge sink-harmonic wrinkle reduction
US20070023833A1 (en) 2005-07-28 2007-02-01 Serguei Okhonin Method for reading a memory cell having an electrically floating body transistor, and memory cell and array implementing same
US7266014B2 (en) 2005-08-01 2007-09-04 Macronix International Co., Ltd Method of operating non-volatile memory device
US20070045697A1 (en) 2005-08-31 2007-03-01 International Business Machines Corporation Body-contacted semiconductor structures and methods of fabricating such body-contacted semiconductor structures
WO2007033045A2 (en) 2005-09-12 2007-03-22 Idaho Research Foundation, Inc. Stacked mosfets
US20070082617A1 (en) * 2005-10-11 2007-04-12 Crestcom, Inc. Transceiver with isolation-filter compensation and method therefor
US8195103B2 (en) 2006-02-15 2012-06-05 Texas Instruments Incorporated Linearization of a transmit amplifier
JP2008011503A (en) 2006-05-31 2008-01-17 Matsushita Electric Ind Co Ltd High-frequency switching circuit, high-frequency switching device and transmission module device
JP2008035487A (en) 2006-06-19 2008-02-14 Renesas Technology Corp Rf power amplifier
US7894779B2 (en) * 2006-06-22 2011-02-22 Honeywell International Inc. Apparatus and method for transmitting and receiving multiple radio signals over a single antenna
US7639199B2 (en) * 2006-09-22 2009-12-29 Broadcom Corporation Programmable antenna with programmable impedance matching and methods for use therewith
US7808342B2 (en) 2006-10-02 2010-10-05 Skyworks Solutions, Inc. Harmonic phase tuning filter for RF switches
FR2906893B1 (en) 2006-10-06 2009-01-16 Thales Sa METHOD AND DEVICE FOR MONITORING THE INTEGRITY OF INFORMATION DELIVERED BY AN INS / GNSS HYBRID SYSTEM
US20080191788A1 (en) 2007-02-08 2008-08-14 International Business Machines Corporation Soi mosfet device with adjustable threshold voltage
US7960772B2 (en) 2007-04-26 2011-06-14 Peregrine Semiconductor Corporation Tuning capacitance to enhance FET stack voltage withstand
US7817966B2 (en) 2007-07-13 2010-10-19 Skyworks Solutions, Inc. Switching device with reduced intermodulation distortion
EP2568608B1 (en) 2008-02-28 2014-05-14 Peregrine Semiconductor Corporation Method and Apparatus for use in Digitally Tuning a Capacitor in an Integrated Circuit Device
US20100330938A1 (en) 2008-03-13 2010-12-30 Freescale Semiconductor, Inc. Power detector
US7868683B2 (en) 2008-08-12 2011-01-11 Infineon Technologies Ag Switch using an accelerating element
JP5299995B2 (en) 2008-08-26 2013-09-25 アルパイン株式会社 Map display device
KR100905948B1 (en) 2008-08-28 2009-07-06 (주)카이로넷 Doherty amplifier and signal amplification system having the same, method for amplifying signal
US8682260B1 (en) * 2008-10-28 2014-03-25 Rf Micro Devices, Inc. Power amplifier with tunable bandpass and notch filter
US8103226B2 (en) 2008-10-28 2012-01-24 Skyworks Solutions, Inc. Power amplifier saturation detection
US8131225B2 (en) 2008-12-23 2012-03-06 International Business Machines Corporation BIAS voltage generation circuit for an SOI radio frequency switch
US8022772B2 (en) * 2009-03-19 2011-09-20 Qualcomm Incorporated Cascode amplifier with protection circuitry
US7786807B1 (en) 2009-04-23 2010-08-31 Broadcom Corporation Cascode CMOS RF power amplifier with programmable feedback cascode bias under multiple supply voltages
US8232627B2 (en) 2009-09-21 2012-07-31 International Business Machines Corporation Integrated circuit device with series-connected field effect transistors and integrated voltage equalization and method of forming the device
EP2339746B1 (en) 2009-12-15 2013-02-20 Nxp B.V. Doherty amplifier with composed transfer characteristic having multiple peak amplifiers
US8111104B2 (en) 2010-01-25 2012-02-07 Peregrine Semiconductor Corporation Biasing methods and devices for power amplifiers
US8552816B2 (en) * 2010-03-23 2013-10-08 Rf Micro Devices, Inc. Multiband simultaneous transmission and reception front end architecture
US9154178B2 (en) * 2010-05-17 2015-10-06 Tyco Electronics Services Gmbh Duplexer with enhanced isolation
US8792836B2 (en) 2010-06-03 2014-07-29 Broadcom Corporation Front end module with compensating duplexer
JP6006219B2 (en) 2010-10-20 2016-10-12 ペレグリン セミコンダクター コーポレイション Method and apparatus used to improve MOSFET linearity using stored charge sinks-Suppression of harmonic wrinkles
US9112570B2 (en) * 2011-02-03 2015-08-18 Rf Micro Devices, Inc. Femtocell tunable receiver filtering system
US8427241B2 (en) 2011-05-24 2013-04-23 Amcom Communications, Inc. High efficiency, high frequency amplifiers
US9002309B2 (en) * 2011-05-27 2015-04-07 Qualcomm Incorporated Tunable multi-band receiver
US9124265B2 (en) 2011-07-13 2015-09-01 Peregrine Semiconductor Corporation Method and apparatus for transistor switch isolation
US8729948B2 (en) 2012-01-20 2014-05-20 Samsung Electro-Mechanics Co., Ltd. High frequency switch
US8977216B2 (en) * 2012-03-19 2015-03-10 Qualcomm Incorporated Limited Q factor tunable front end using tunable circuits and microelectromechanical system (MEMS)
US20140028521A1 (en) 2012-07-27 2014-01-30 Rf Micro Devices, Inc. Tuner topology for wide bandwidth
US9124355B2 (en) * 2012-08-22 2015-09-01 Google Technology Holdings LLC Tunable notch filtering in multi-transmit applications
US9608577B2 (en) 2012-09-23 2017-03-28 Dsp Group Ltd. Radio frequency front end module circuit incorporating an efficient high linearity power amplifier
US9413298B2 (en) 2012-12-28 2016-08-09 Peregrine Semiconductor Corporation Amplifier dynamic bias adjustment for envelope tracking
US9602063B2 (en) 2013-03-12 2017-03-21 Peregrine Semiconductor Corporation Variable impedance match and variable harmonic terminations for different modes and frequency bands
US20150236748A1 (en) 2013-03-14 2015-08-20 Peregrine Semiconductor Corporation Devices and Methods for Duplexer Loss Reduction
US9595923B2 (en) 2013-03-14 2017-03-14 Peregrine Semiconductor Corporation Systems and methods for optimizing amplifier operations

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5973363A (en) * 1993-07-12 1999-10-26 Peregrine Semiconductor Corp. CMOS circuitry with shortened P-channel length on ultrathin silicon on insulator
US20020021687A1 (en) * 2000-06-14 2002-02-21 Kazuya Toki Time-division multiplexing radio system
US6812885B2 (en) * 2002-05-24 2004-11-02 Honeywell International Inc. Radio altimeter test method and apparatus
US7353020B2 (en) * 2003-11-17 2008-04-01 Hitachi Communication Technologies, Ltd. Radio access point testing apparatus and method of testing radio access point
US20070284724A1 (en) * 2006-06-09 2007-12-13 Robert Mark Englekirk Mounting integrated circuit dies for high frequency signal isolation
US20100112962A1 (en) * 2006-07-11 2010-05-06 Paulus Thomas Maria Van Zeijl Calibration of transmit signals in fdd-transceivers
US20090180403A1 (en) * 2008-01-11 2009-07-16 Bogdan Tudosoiu Multi-band and multi-mode radio frequency front-end module architecture
US8112043B2 (en) * 2008-04-11 2012-02-07 Infineon Technologies Ag Radio frequency communication devices and methods

Cited By (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20170146591A1 (en) * 2013-09-30 2017-05-25 Peregrine Semiconductor Corporation Mismatch Detection Using Replica Circuit
US9864000B2 (en) * 2013-09-30 2018-01-09 Peregrine Semiconductor Corporation Mismatch detection using replica circuit
US9535110B2 (en) 2013-09-30 2017-01-03 Peregrine Semiconductor Corporation Mismatch detection using replica circuit
US10184973B2 (en) * 2014-05-07 2019-01-22 Psemi Corporation Mismatch detection using replica circuit
US11519956B2 (en) 2014-05-07 2022-12-06 Psemi Corporation Mismatch detection using replica circuit
US10768218B2 (en) 2014-05-07 2020-09-08 Psemi Corporation Mismatch detection using replica circuit
US20180091187A1 (en) * 2015-06-03 2018-03-29 Murata Manufacturing Co., Ltd. High-frequency front-end circuit
US10498387B2 (en) * 2015-06-03 2019-12-03 Murata Manufacturing Co., Ltd. High-frequency front-end circuit
US9973173B2 (en) 2015-06-30 2018-05-15 Qorvo Us, Inc. Switch topology for switching filters multiplexers
US9705203B2 (en) * 2015-08-12 2017-07-11 Qorvo Us, Inc. Radio frequency front end architecture with a switch topology for routing filter circuits while substantially reducing variations in the reactive loading at common ports
US20170047666A1 (en) * 2015-08-12 2017-02-16 Qorvo Us, Inc. Radio frequency front end architecture with a switch topology for routing filter circuits while substantially reducing variations in the reactive loading at common ports
US10578708B2 (en) * 2016-04-08 2020-03-03 Raytheon Company Switchable transmit/receive (T/R) module
CN109196372A (en) * 2016-04-08 2019-01-11 雷声公司 Changeable transmission/reception (T/R) module
US10250339B2 (en) 2016-06-28 2019-04-02 Psemi Corporation Integrated circuit calibration architecture
US10142039B2 (en) * 2016-06-28 2018-11-27 Psemi Corporation Integrated circuit calibration architecture
US10128963B2 (en) 2016-06-28 2018-11-13 Psemi Corporation Integrated circuit calibration architecture
US9991973B2 (en) * 2016-06-28 2018-06-05 Psemi Corporation Integrated circuit calibration architecture
US20180131453A1 (en) * 2016-06-28 2018-05-10 Peregrine Semiconductor Corporation Integrated Circuit Calibration Architecture
US20180123621A1 (en) * 2016-10-28 2018-05-03 Airoha Technology Corp. Multi-mode multi-band transceiver, radio frequency front-end circuit and radio frequency system using the same
WO2018084889A1 (en) 2016-11-02 2018-05-11 Peregrine Semiconductor Corporation Mismatch detection using replica circuit
US10056874B1 (en) 2017-02-28 2018-08-21 Psemi Corporation Power amplifier self-heating compensation circuit
US11451205B2 (en) 2017-02-28 2022-09-20 Psemi Corporation Power amplifier self-heating compensation circuit
US10873308B2 (en) 2017-02-28 2020-12-22 Psemi Corporation Power amplifier self-heating compensation circuit
US10439562B2 (en) 2017-02-28 2019-10-08 Psemi Corporation Current mirror bias compensation circuit
US10439563B2 (en) 2017-02-28 2019-10-08 Psemi Corporation Positive temperature coefficient bias compensation circuit
US10361745B2 (en) 2017-06-28 2019-07-23 Qualcomm Incorporated Systems and methods for reducing transmit and receive power via a T/R switch
WO2019005385A1 (en) * 2017-06-28 2019-01-03 Qualcomm Incorporated Systems and methods for reducing transmit and receive power via a t/r switch
US20230120605A1 (en) * 2017-11-23 2023-04-20 Apple Inc. Apparatuses and methods for wireless communication
US10658978B2 (en) 2017-11-28 2020-05-19 Samsung Electronics Co., Ltd. Method for configuring power in wireless communication system and apparatus thereof
WO2019107899A1 (en) * 2017-11-28 2019-06-06 Samsung Electronics Co., Ltd. Method for configuring power in wireless communication system and apparatus thereof
US10924065B2 (en) 2017-11-28 2021-02-16 Samsung Electronics Co., Ltd. Method for configuring power in wireless communication system and apparatus thereof
US10236836B1 (en) 2017-12-01 2019-03-19 Psemi Corporation Tuned amplifier matching based on band switch setting
US10720954B2 (en) 2018-11-20 2020-07-21 Honeywell International Inc. System and method to share single antenna between two L-band receiver/transmitters
EP3657686A3 (en) * 2018-11-20 2020-08-05 Honeywell International Inc. System and method to share single antenna between two l-band receiver/transmitters
US20210175855A1 (en) * 2019-12-06 2021-06-10 Silicon Laboratories Inc. System and method of mitigating interference caused by coupling from power amplifier to voltage-controlled oscillator
CN112928996A (en) * 2019-12-06 2021-06-08 矽利康实验室公司 System and method for mitigating interference caused by coupling a power amplifier to a voltage controlled oscillator
US11394406B2 (en) * 2020-03-27 2022-07-19 Murata Manufacturing Co., Ltd. Radio frequency module and communication device
US11394407B2 (en) * 2020-03-27 2022-07-19 Murata Manufacturing Co., Ltd. Radio frequency module and communication device
US20220311456A1 (en) * 2020-03-27 2022-09-29 Murata Manufacturing Co., Ltd. Radio frequency module and communication device
US11881876B2 (en) * 2020-03-27 2024-01-23 Murata Manufacturing Co., Ltd. Radio frequency module and communication device

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US20150249479A1 (en) 2015-09-03
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US20150236748A1 (en) 2015-08-20
US20150280655A1 (en) 2015-10-01

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