TWI720190B - Processing method of electronic parts - Google Patents

Abstract

The resin film for temporary fixation of the present invention includes: a first layer including a first thermoplastic resin having a glass transition temperature of -50°C to 50°C; and a second layer including a second layer having a glass transition temperature of -50°C to 50°C Thermoplastic resin and curable components.

Description

Processing method of electronic parts

The present invention relates to a resin film for temporary fixation.

With the multi-functionalization of electronic devices such as smart phones and tablet PCs, stacked multi-chip packages (MCP) in which multilayer semiconductor elements are stacked and high-capacity are becoming popular . In the mounting of semiconductor elements, a film-like adhesive that is advantageous in the mounting step is widely used as an adhesive for die bonding. However, despite the tendency to become multifunctional as described above, the current connection method of semiconductor elements using wire bonding has a limit in the processing speed of data, and therefore there is a tendency for the operation of electronic equipment to slow down. In addition, there is an increasing demand for keeping the power consumption low so that it can be used for a longer period of time without charging. Therefore, power saving is also required. From this point of view, in recent years, for the purpose of further speeding up and saving power, electronic equipment with a new structure in which semiconductor elements are connected by means of through electrodes instead of wire bonding has also been developed.

Although electronic equipment with a new structure has been developed as described above, there is still a demand for higher capacity, and the development of a technology that allows more layers of semiconductor elements to be stacked regardless of the package structure is being developed. However, in order to stack more semiconductor elements in a limited space, stable thinning of semiconductor elements is essential.

For example, the current polishing step for thinning semiconductor elements Among them, a case where a support tape called a so-called BG tape is attached to a semiconductor element and polished in a supported state has become the mainstream. However, the thinned semiconductor element is easily warped due to the influence of the circuit applied on the surface. Therefore, the BG tape, which is a tape material that is easily deformed, gradually cannot sufficiently support thinned semiconductor elements.

Based on this background, a thinning process for semiconductor devices using silicon wafers or glass as a support, which is a harder raw material than the BG tape, has been proposed, and it has also been proposed to bond the semiconductor device to the support of the silicon wafer or glass. s material. In such an adhesive, it is required as an important characteristic to be able to peel off the polished semiconductor element from the support without causing damage. Therefore, a peeling method to satisfy these characteristics has been studied diligently. Examples of the peeling method include: a method of dissolving the adhesive with a solvent; a method of improving the releasability by removing the adhesive by heating; and modifying the adhesive by laser irradiation Or disappearing methods, etc. (Patent Document 1 and Patent Document 2). However, the dissolution of the adhesive by a solvent takes time, so productivity tends to decrease. In addition, in the method of using heating to remove adhesiveness, there is a concern that heating will affect the semiconductor element, and the heat resistance is poor, so it cannot be used for process applications such as forming through electrodes. On the other hand, in the method of modifying or disappearing the adhesive by laser irradiation, expensive laser equipment must be introduced, and the application of this process requires considerable investment.

[Prior Art Literature]

[Patent Literature]

Patent Document 1: Japanese Patent No. 4565804

Patent Document 2: Japanese Patent No. 4936667

In recent years, the thinning of electronic parts such as semiconductor elements has been promoted for the purpose of increasing the capacity of electronic equipment, and adhesives have been developed to fix electronic parts to supports such as silicon wafers and glass during processing. However, from the viewpoint of workability and the necessity of high equipment investment, the adhesive has room for further improvement. In particular, most of these adhesives are in liquid form, and they are applied to electronic parts or supports by spin coating, etc., and used for film formation by heating, ultraviolet (UV) irradiation, or the like. However, in this case, there are problems such as the following: due to the unevenness of the adhesive during coating, it is easy to produce unevenness in the thickness of the processed electronic parts in each electronic part. In addition, in spin coating, it is necessary to discard Material scattered due to rotation during coating.

In addition, the electronic components to be processed are not limited to those with high smoothness, and there is a tendency to increase the processing of wafers that have solder balls on the circuit surface and have surface irregularities exceeding 80 μm. In the case of a surface having large irregularities as described above, if the irregularities are sufficiently filled, on the other hand, it is difficult to peel the adhesive from the surface. In addition, when the adhesive strength of the solder balls is insufficient, when the adhesive is peeled off, the solder balls may fall off.

When the electronic parts and support are peeled from the adhesive after processing, if the peel strength of the electronic part surface of the adhesive is similar to the peel strength of the support surface of the adhesive, the electronic parts are likely to be damaged or bonded. The tendency of the agent to break. Due to the fracture of the adhesive, residue of the adhesive will be generated on both the semiconductor element and the support after peeling.

The present invention has been made in view of the above circumstances, and its object is to provide a resin film for temporary fixation that can perform processing of electronic components well and can be easily peeled off from the processed electronic components and the support.

The present invention provides a resin film for temporary fixation, comprising: a first layer including a first thermoplastic resin having a glass transition temperature of -50°C to 50°C; and a second layer including a glass transition temperature of -50°C to 50°C The second thermoplastic resin and curable component.

According to the resin film for temporary fixation of the present invention, by having the two layers of the first layer and the second layer, electronic parts can be processed well and can be easily peeled off from the processed electronic parts and the support. That is, since the resin film is provided with two layers, the peel strength with respect to the surface of the electronic component and the peel strength with respect to the surface of the support body can be adjusted separately, and the breakage of the electronic component or the breakage of the adhesive can be prevented. In addition, by attaching the second layer having the specific composition to the surface of the support, the physical properties necessary for processing (for example, shear viscosity) and the releasability from the support can be coexisted. Furthermore, by being in the form of a film, the film thickness can be easily controlled, and the thickness unevenness between individual electronic components can be reduced. In addition, the resin film for temporary fixation of the present invention can be attached to an electronic component or a support by a simple method such as lamination, and has excellent workability.

In the resin film for temporary fixation of the present invention, the content of the curable component in the second layer may be 10 parts by mass to 500 parts by mass relative to 100 parts by mass of the second thermoplastic resin. If the content of the curable component in the second layer is within the above range, the resin film for temporary fixation can have a high level of low-temperature adhesion, heat resistance, curability, and peeling properties. Detached.

In the resin film for temporary fixation of the present invention, the thickness of the first layer may be 10 μm to 350 μm, and the thickness of the second layer may be 10 μm to 350 μm. If the thickness of the resin film for temporary fixation is within the above-mentioned range, the unevenness of the surface of the electronic component such as a semiconductor element can be easily and sufficiently filled, and the electronic component and the support can be fixed more reliably.

In the resin film for temporary fixation of the present invention, the thickness of the first layer and the thickness of the second layer may satisfy the relationship of the following formula (1).

(1/10)a≦b≦10a...(1)

[In formula (1), a represents the thickness of the first layer, b represents the thickness of the second layer]

If the ratio of the thickness is within the above range, the peel strength of the electronic component surface of the adhesive and the peel strength of the support surface of the adhesive can be easily adjusted.

In the resin film for temporary fixation of the present invention, the first thermoplastic resin and/or the second thermoplastic resin may be a thermoplastic resin having a crosslinkable functional group and having a weight average molecular weight of 100,000 to 1.2 million. In this case, the first layer and the second layer can show better releasability.

In the resin film for temporary fixation of the present invention, the curable component may be a thermosetting resin.

In the resin film for temporary fixation of the present invention, the first layer and/or the second layer may further include a silicone compound.

In the resin film for temporary fixation of the present invention, the first layer and/or the second layer may be It also contains hardening accelerators.

According to the present invention, it is possible to provide a resin film for temporary fixation that can perform processing of electronic components well and can be easily peeled off from the processed electronic components and the support.

1, 4: Resin diaphragm for temporary fixation

2: The first resin sheet

3: The second resin sheet

10: Support film

20: Resin film for temporary fixation

21: first layer

22: second layer

30: Protective film

40: Temporarily fix the material

41: first layer

42: second layer

50: Support

52: peeling layer

60: Electronic parts

70: Temporarily fix the material

71: first layer

72: second layer

80: electronic parts

82: Through electrode

84: cutting line

86: Through electrode

90: Grinding machine

100: Semiconductor components

110: Wiring board

120: Electronic equipment

Fig. 1(A) is a plan view showing an embodiment of a resin film for temporary fixation having a first layer and a second layer, and Fig. 1(B) is a schematic cross-sectional view taken along the line I-I of Fig. 1(A).

Fig. 2(A) is a plan view showing an embodiment of the first resin sheet, and Fig. 2(B) is a schematic cross-sectional view taken along the line II-II of Fig. 2(A).

Fig. 3(A) is a plan view showing an embodiment of a second resin sheet, and Fig. 3(B) is a schematic cross-sectional view taken along the line III-III of Fig. 3(A).

Fig. 4(A) is a plan view showing another embodiment of the resin film for temporary fixation of the present invention, and Fig. 4(B) is a schematic cross-sectional view taken along the line IV-IV of Fig. 4(A).

5(A), 5(B), and 5(C) are schematic cross-sectional views for explaining an embodiment of the processing method of electronic parts, and FIG. 5(D) shows the electronic components after processing, for example, after grinding. Top view of the part.

6(A) to 6(C) are schematic cross-sectional views for explaining one embodiment of the separation step of separating the processed electronic component from the support and the resin film for temporary fixation.

Fig. 7(A) and Fig. 7(B) are schematic cross-sectional views for explaining one embodiment of the manufacturing method of the electronic equipment device.

Hereinafter, a suitable embodiment of the present invention will be described in detail with reference to the drawings. In addition, in the drawings, the same or corresponding parts are denoted with the same symbols, and repeated descriptions are omitted. In addition, the size ratio of the drawing is not limited to the ratio shown in the figure. However, the present invention is not limited to the following embodiments.

[Resin Film for Temporary Fixation]

The resin film for temporary fixation of this embodiment is equipped with the 1st layer containing the 1st thermoplastic resin, and the 2nd layer containing the 2nd thermoplastic resin and a curable component.

Fig. 1(A) is a plan view showing an embodiment of a resin film for temporary fixation of the present embodiment, and Fig. 1(B) is a schematic cross-sectional view taken along the line I-I of Fig. 1(A).

The resin film 1 for temporary fixation shown in FIG. 1(A) and FIG. 1(B) sequentially includes a support film 10, a first layer 21, a second layer 22, and a support film 10, and includes a first layer 21 and The resin film 20 for temporary fixation of the second layer 22.

The resin film for temporary fixation of this embodiment has two layers with different compositions. The peeling strength of the electronic part surface of the adhesive and the peeling strength of the support surface of the adhesive can be adjusted. Both the electronic component fixed to the support and the support are peeled off by the resin film for fixing. In addition, because it is a film-like adhesive, it is easier to control the film thickness and reduce the thickness unevenness between various electronic parts. In addition, the resin film for temporary fixation of this embodiment can be laminated and other simple methods It is attached to electronic parts or supports and has excellent workability.

(level one)

The first layer contains a first thermoplastic resin (hereinafter, also referred to as (a1) thermoplastic resin). (A1) The thermoplastic resin can be used without particular limitation as long as it has thermoplasticity at least before the film is laminated on the electronic component or the support. The thermoplastic resin may also be a resin that forms a cross-linked structure by heating or the like.

(A1) As the thermoplastic resin, a polymer having a crosslinkable functional group can be used. Examples of polymers having crosslinkable functional groups include thermoplastic polyimide resins, (meth)acrylic copolymers having crosslinkable functional groups, urethane resins, polyphenylene ether resins, and polyether resins. Imine resin, phenoxy resin, modified polyphenylene ether resin, etc. Among these, a (meth)acrylic copolymer having a crosslinkable functional group is preferred. In addition, in this specification, the term "(meth)acrylic acid" is used in any meaning of acrylic acid or methacrylic acid. A thermoplastic resin may be used individually by 1 type, and may be used in combination of 2 or more types.

The (meth)acrylic copolymer having a crosslinkable functional group can be obtained by a polymerization method such as pearl polymerization and solution polymerization, or a commercially available product can also be used.

The polymer having a crosslinkable functional group may have a crosslinkable functional group in the polymer chain, or may have a crosslinkable functional group at the end of the polymer chain. As a crosslinkable functional group, an epoxy group, an alcoholic hydroxyl group, a phenolic hydroxyl group, a carboxyl group, etc. are mentioned. A crosslinkable functional group may be used individually by 1 type, and may be used in combination of 2 or more types.

(a1) The glass transition temperature of the thermoplastic resin (hereinafter, sometimes also expressed ("Tg") is preferably -50°C to 50°C, more preferably -30°C to 20°C. If the Tg is in this range, the tack force of the first layer can be prevented from becoming too high and the workability is degraded, and at the same time, more sufficient fluidity can be obtained, and the elasticity of the cured sheet can be further reduced. Modulus, so the peel strength can be further suppressed from becoming too high.

Tg is an intermediate point glass transition temperature value when a thermoplastic resin is measured using a differential scanning calorimeter (Differential Scanning Calorimeter (DSC), for example, "Thermo Plus 2" manufactured by Rigaku Corporation). Specifically, the Tg is the midpoint glass transition temperature calculated by measuring the heat change under the conditions of a heating rate of 10°C/min and a measurement temperature of -80°C to 80°C, and calculated by a method based on JIS K 7121:1987 .

(a1) The weight average molecular weight of the thermoplastic resin is not particularly limited, but is preferably 100,000 to 1.2 million, more preferably 200,000 to 1 million. If the weight average molecular weight of the thermoplastic resin is in such a range, it is easier to ensure film-forming properties and fluidity. The weight average molecular weight is a polystyrene conversion value obtained by using a calibration curve based on a standard polystyrene using Gel Penetration Chromatography (GPC).

In addition to the (a1) thermoplastic resin, the first layer may optionally contain a silicone compound (hereinafter, sometimes referred to as (a2) silicone compound) and a hardening accelerator (hereinafter, sometimes also referred to as (a3) hardening accelerator Agent) and other ingredients.

(A2) The silicone compound can be used without particular limitation as long as it has a polysiloxane structure. For example, silicone modified resins, straight silicone oils, non-reactive modified silicone oils, reactive modified silicone oils, and the like can be cited. Silicone The compound can be used alone or in combination of two or more.

Since the first layer contains the silicone compound, when the resin film for temporary fixation is peeled from the semiconductor wafer, the sealing body, and the support, it can be easily peeled without using a solvent even at a low temperature of 100° C. or less.

When the silicone compound used in this embodiment is a silicone modified resin, there is no particular limitation as long as it is a resin modified by silicone. As the silicone-modified resin, a silicone-modified alkyd resin is preferable. Since the first layer contains a silicone-modified alkyd resin, when the temporary fixing resin film is peeled from the electronic component, it can be peeled more easily without using a solvent.

Examples of methods for obtaining silicone-modified alkyd resins include: (i) the usual synthesis reaction for obtaining alkyd resins, that is, when a polyhydric alcohol is reacted with a fatty acid, a polybasic acid, etc., an organopolysiloxane As a method of simultaneous reaction of the alcohol component; (ii) a method of reacting a common alkyd resin synthesized in advance with an organopolysiloxane.

Examples of polyols used as raw materials for alkyd resins include ethylene glycol, diethylene glycol, triethylene glycol, propylene glycol, 1,3-propanediol, 1,4-butanediol, neopentyl glycol, etc. Dihydric alcohol; trihydric alcohols such as glycerol, trimethylolethane, trimethylolpropane, etc.; diglycerol, triglycerol, pentaerythritol, dipentaerythritol, mannite, sorbit, and other quaternary or more Of polyols. These can be used individually by 1 type, and can also be used in combination of 2 or more types.

Examples of polybasic acids used as raw materials for alkyd resins include aromatic polybasic acids such as phthalic anhydride, terephthalic acid, isophthalic acid, and trimellitic anhydride. Acid; succinic acid, adipic acid, sebacic acid and other aliphatic saturated polybasic acids; maleic acid, maleic anhydride, fumaric acid, itaconic acid, citraconic acid anhydride and other aliphatic unsaturated polybasic acids Acid; cyclopentadiene-maleic anhydride adduct, terpene-maleic anhydride adduct, rosin-maleic anhydride adduct, etc. are based on Diels. Alder (Diels-Alder) reaction of polybasic acid. These can be used individually by 1 type, and can also be used in combination of 2 or more types.

Alkyd resins can also contain modifiers or crosslinking agents.

Modifiers can use caprylic acid, lauric acid, palmitic acid, stearic acid, oleic acid, linoleic acid, linoleic acid, elenic acid, ricinoleic acid, dehydrated ricinoleic acid, coconut oil, linseed Oil, tung oil, castor oil, dehydrated castor oil, soybean oil, safflower seed oil, and these fatty acids. These can be used individually by 1 type, and can also be used in combination of 2 or more types.

Examples of the crosslinking agent include amino resins such as melamine resins and urea resins, urethane resins, epoxy resins, and phenol resins. Among these, the amino resin is preferable because an amino alkyd resin crosslinked by the amino resin can be obtained. One type of crosslinking agent may be used alone, or two or more types may be used in combination.

Silicone-modified alkyd resin can be used in combination with an acid catalyst as a hardening catalyst. The acid catalyst is not particularly limited, and it can be appropriately selected and used from acid catalysts known as crosslinking reaction catalysts of alkyd resins. As such an acidic catalyst, organic acidic catalysts, such as p-toluenesulfonic acid and methanesulfonic acid, are suitable, for example. The acid catalyst may be used alone or in combination of two or more.

As the above-mentioned silicone modified alkyd resin, for example, Tesfine TA31-209E (Hitachi Kasei Polymer) (Stock) Manufacturing, trade name).

When the silicone compound used in this embodiment is modified silicone oil, it is preferably polyether modified silicone, alkyl modified silicone, and epoxy modified silicone.

As the above-mentioned silicone, as long as it is compatible with a high-molecular-weight body, it can be used without particular limitation. As the silicone, Toray. SH3773M, L-7001, SH-550, SH-710 manufactured by Toray. Dow Corning (stock), X-22-163, KF-105, X-22-163B, manufactured by Shin-Etsu Silicone (stock) X-22-163C, BYK-UV3500 manufactured by BYK, etc.

The compounding amount of the (a2) silicone compound in the first layer is preferably 0 parts by mass to 100 parts by mass, and more preferably 2 parts by mass to 80 parts by mass relative to 100 parts by mass of the thermoplastic resin (a1). (A2) If the blending amount of the silicone compound is within the above-mentioned range, the adhesiveness during processing of electronic parts and the releasability after processing can be coexisted at a higher level.

(A3) Hardening accelerators include, for example, imidazoles, dicyandiamide derivatives, dihydrazine dicarboxylic acid, triphenylphosphine, tetraphenylphosphonium tetraphenylborate, 2-ethyl-4-methyl Imidazole-tetraphenylborate, 1,8-diazabicyclo[5.4.0]undecene-7-tetraphenylborate, etc. These may be used individually by 1 type, and may be used in combination of 2 or more types.

In the first layer, when (a1) the thermoplastic resin contains an epoxy-containing (meth)acrylic copolymer, it preferably contains a hardening accelerator that promotes hardening of the epoxy group contained in the acrylic copolymer. Agent.

The blending amount of the (a3) hardening accelerator in the first layer is preferably 0.01 to 2.0 parts by mass relative to 100 parts by mass of the thermoplastic resin (a1). If relative to (a1) 100 parts by mass of the thermoplastic resin and (a3) at least 0.01 parts by mass of the hardening accelerator, the first layer can be sufficiently hardened during the thermal history in the manufacturing process of the semiconductor element, so it can be fixed more reliably Electronic parts and supports. If the blending amount of (a3) hardening accelerator is 2.0 parts by mass or less relative to 100 parts by mass of (a1) thermoplastic resin, the melt viscosity of the resin film for temporary fixation is unlikely to increase due to heating in the manufacturing process, and the film may be preserved The tendency of stability to become better.

Examples of other components include inorganic fillers, organic fillers, silane coupling agents, curable components, and the like.

Examples of inorganic fillers include metal fillers such as silver powder, gold powder, and copper powder; silica, alumina, boron nitride, titania, glass, iron oxide, and ceramic ) And other non-metal inorganic fillers. The inorganic filler can be selected according to the desired function. The metal filler may be added for the purpose of imparting thixotropy to the film. Non-metal inorganic fillers can be added for the purpose of imparting low thermal expansion and low hygroscopicity to the film. One kind of inorganic filler may be used alone, or two or more kinds may be used in combination.

The inorganic filler is preferably one having an organic group on the surface. By modifying the surface of the inorganic filler with an organic group, it is easy to improve the dispersibility in an organic solvent when preparing a resin composition for forming a film, and the adhesiveness and heat resistance of the film.

An inorganic filler having an organic group on the surface can be obtained, for example, by mixing a silane coupling agent represented by the following general formula (B-1) with an inorganic filler and stirring at a temperature of 30°C or higher. The surface of the inorganic filler is modified by organic groups and can be measured by ultraviolet (UV), infrared (Infrared Radiation, IR), X-ray light Electron spectroscopy (X-ray photoelectron spectroscopy, XPS) measurement and other confirmation.

In formula (B-1), X represents selected from phenyl, glycidoxy, acryl, methacryl, mercapto, amino, vinyl, isocyanate, and methacryloxy. In the organic group in the group, s represents 0 or an integer of 1 to 10, and R ¹¹ , R ¹² and R ¹³ each independently represent an alkyl group having 1 to 10 carbon atoms. Examples of the alkyl group having 1 to 10 carbon atoms include methyl, ethyl, propyl, butyl, pentyl, hexyl, heptyl, octyl, nonyl, decyl, isopropyl, and isobutyl. From the viewpoint of easy availability, the alkyl group having 1 to 10 carbon atoms is preferably a methyl group, an ethyl group, and a pentyl group. From the viewpoint of heat resistance, X is preferably an amino group, a glycidyloxy group, a mercapto group, and an isocyanate group, and more preferably a glycidyloxy group and a mercapto group. From the viewpoint of suppressing film fluidity during high heat and improving heat resistance, s in the formula (B-1) is preferably 0 to 5, and more preferably 0 to 4.

Preferred silane coupling agents include, for example, trimethoxyphenylsilane, dimethyldimethoxyphenylsilane, triethoxyphenylsilane, dimethoxymethylphenylsilane, vinyl trimethoxy Silane, vinyl triethoxy silane, vinyl tris(2-methoxyethoxy) silane, N-(2-aminoethyl)-3-aminopropyl methyl dimethoxy silane Alkyl, N-(2-aminoethyl)-3-aminopropyltrimethoxysilane, 3-aminopropyltriethoxysilane, 3-aminopropyltrimethoxysilane, 3-condensation Glyceryloxypropyltrimethoxysilane, 3-glycidoxypropylmethyldimethoxysilane, 2-(3,4-epoxycyclohexyl)ethyltrimethoxysilane, 3-isocyanatopropyl Triethoxysilane, 3-methacryloxypropyltrimethoxysilane, 3-mercaptopropyltrimethoxysilane, 3-ureidopropyltriethoxysilane, N-(1,3 -Dimethylbutylene)-3-(triethoxysilyl)-1-propylamine, N,N'-bis(3-(trimethoxysilyl)propyl)ethylenediamine, polyoxyethylene propylene Trialkoxysilane, polyethoxydimethylsiloxane. Among these, preferred are 3-aminopropyltriethoxysilane, 3-glycidoxypropyltrimethoxysilane, 3-isocyanatopropyltriethoxysilane, 3-mercaptopropyl Trimethoxysilane, more preferably trimethoxyphenylsilane, 3-glycidoxypropyltrimethoxysilane, 3-mercaptopropyltrimethoxysilane. The silane coupling agent may be used alone or in combination of two or more.

Regarding the amount of the silane coupling agent used, from the viewpoint of achieving a balance between the effect of improving heat resistance and storage stability, it is preferably 0.01 to 50 parts by mass relative to 100 parts by mass of the inorganic filler, and more preferably It is 0.05 parts by mass to 20 parts by mass, and from the viewpoint of improving heat resistance, it is more preferably 0.5 parts by mass to 10 parts by mass.

Regarding the blending amount of the inorganic filler in the first layer, in terms of improving the handleability of the resin film for temporary fixation in the B-stage state and improving the low thermal expansion, it is compared with (a1) thermoplastic resin 100 parts by mass, preferably 300 parts by mass or less, more preferably 200 parts by mass or less, and still more preferably 100 parts by mass or less. The lower limit of the content of the inorganic filler is not particularly limited. Compared with the thermoplastic resin 100 parts by mass is preferably 5 parts by mass or more. By setting the content of the inorganic filler in the above range, there is a tendency that the adhesiveness of the first layer can be sufficiently ensured, and the desired function can be imparted.

Examples of organic fillers include carbon, rubber-based fillers, silicone-based fine particles, polyamide fine particles, and polyimide fine particles. The blending amount of the organic filler is preferably 300 parts by mass or less, more preferably 200 parts by mass or less, and still more preferably 100 parts by mass or less with respect to 100 parts by mass of the thermoplastic resin (a1). The lower limit of the content of the organic filler is not particularly limited, but it is preferably 5 parts by mass or more with respect to 100 parts by mass of the thermoplastic resin.

In addition, the first layer may contain curable components such as epoxy resin, phenol resin, and bismaleimide resin.

The thickness of the first layer 21 is not particularly limited. From the viewpoint of sufficiently filling the irregularities on the surface of electronic parts such as semiconductor elements, the thickness after drying is preferably equal to or less than the irregularities on the surface of electronic parts such as semiconductor elements. The thickness is preferably 10 μm to 350 μm. If the thickness is 10 μm or more, the unevenness of the thickness at the time of coating is reduced. In addition, since the thickness is sufficient, the strength of the film or the cured product of the film is good, and the irregularities on the surface of electronic parts such as semiconductor elements can be more fully buried. If the thickness is 350μm or less, it is difficult to be crushed when it is bonded to the second layer 22, so it is difficult to produce unevenness in the thickness of the resin film for temporary fixation, and it is easy to reduce the residual solvent in the film by sufficient drying. The amount can further reduce blistering when heating the cured product of the film.

(Second floor)

The second layer contains a second thermoplastic resin (hereinafter, also referred to as (b1) thermoplastic resin) and a curable component (hereinafter, also referred to as (b2) curable component).

(B1) The thermoplastic resin can be used without particular limitation as long as it has thermoplasticity at least before the film is laminated on the electronic component or the support. The thermoplastic resin may also be a resin that forms a cross-linked structure by heating or the like.

(B1) The thermoplastic resin used in this embodiment can use a polymer having a crosslinkable functional group. Examples of polymers having crosslinkable functional groups include thermoplastic polyimide resins, (meth)acrylic copolymers having crosslinkable functional groups, urethane resins, polyphenylene ether resins, and polyether resins. Imine resin, phenoxy resin, modified polyphenylene ether resin, etc. Among these, a (meth)acrylic copolymer having a crosslinkable functional group is preferred. The resin may be used singly, or two or more of them may be used in combination.

The (meth)acrylic copolymer having a crosslinkable functional group can be obtained by a polymerization method such as bead polymerization or solution polymerization, or a commercially available product can also be used.

The polymer having a crosslinkable functional group may have a crosslinkable functional group in the polymer chain, or may have a crosslinkable functional group at the end of the polymer chain. As a specific example of a crosslinkable functional group, an epoxy group, an alcoholic hydroxyl group, a phenolic hydroxyl group, a carboxyl group, etc. are mentioned. Among the crosslinkable functional groups, a carboxyl group is preferred. The carboxyl group can be introduced into the polymer chain by using acrylic acid.

As the polymer having a crosslinkable functional group, a (meth)acrylic copolymer having a carboxyl group is preferably used. For example, a (meth)acrylate copolymer having a carboxyl group and a (meth)acrylic copolymer having a carboxyl group are mentioned. Among these, those having a carboxyl group are preferred (Meth)acrylate copolymer.

Examples of the (meth)acrylic copolymer include those having acrylate as a main component, and examples include copolymers of butyl acrylate and/or ethyl acrylate and acetonitrile.

(b1) The Tg of the thermoplastic resin is preferably -50°C to 50°C, more preferably -40°C to 20°C. If the Tg is in this range, the viscosity of the second layer can be suppressed from becoming too high and the workability is degraded, and at the same time, more sufficient fluidity can be obtained, and the elastic modulus of the second layer after hardening can be further reduced. Therefore, the peel strength can be further suppressed from becoming too high.

(b1) The weight average molecular weight of the thermoplastic resin is not particularly limited, but is preferably 100,000 to 1.2 million, more preferably 300,000 to 1 million. If the weight average molecular weight of the thermoplastic resin is in such a range, it is easy to ensure film-forming properties and fluidity.

(b2) The curable component is not particularly limited, but a thermosetting resin is preferred.

Examples of thermosetting resins include epoxy resins, acrylic resins, silicone resins, phenol resins, thermosetting polyimide resins, polyurethane resins, melamine resins, and urea resins. These resins may be used alone. It can be used, or two or more of them can be used in combination. In particular, from the viewpoint of obtaining a second layer excellent in heat resistance, workability, and reliability, the thermosetting resin is preferably an epoxy resin.

The epoxy resin is not particularly limited as long as it has a heat-resistant effect for curing. As the epoxy resin, bifunctional epoxy resins such as bisphenol A epoxy resin; novolac epoxy resins such as phenol novolac epoxy resin and cresol novolac epoxy resin can be used. In addition, epoxy resins can be applied to polyfunctional epoxy resins, glycidylamine epoxy resins, heterocyclic epoxy resins, alicyclic epoxy resins, etc. Known resin.

Examples of bisphenol A epoxy resins include the Epikote series (Epikote 807, Epikote) manufactured by Japan Epoxy Resin Co., Ltd. 815, Epikote 825, Epikote 827, Epikote 828, Epikote 834, Epikote 1001, Epikote Epikote 1004, Epikote 1007, Epikote 1009, "Epikote" is a registered trademark); DER- manufactured by Dow Chemical 330, DER-301 and DER-361; and YD8125, YDF8170, etc. manufactured by Nippon Steel & Sumikin Chemical Co., Ltd. Examples of phenol novolak type epoxy resins include Epikote 152 manufactured by Japan Epoxy Resin Co., Ltd., Epikote 154 manufactured by Japan Epoxy Resin Co., Ltd., and Nippon Kayaku Co., Ltd. EPPN-201, DEN-438 manufactured by Dow Chemical, etc. Examples of o-cresol novolak type epoxy resins include EOCN-102S, EOCN-103S, EOCN-104S, EOCN-1012, EOCN-1025, EOCN-1027, Nippon Steel & Sumikin Chemicals manufactured by Nippon Kayaku Co., Ltd. YDCN701, YDCN702, YDCN703, YDCN704, etc. manufactured by Co., Ltd. Examples of multifunctional epoxy resins include Epon 1031S manufactured by Japan Epoxy Resin Co., Ltd.; Araldite 0163 manufactured by Ciba Specialty Chemicals. ; Denacol EX-611, EX-614, EX-614B, EX-622, EX-512, EX-521, EX-421, manufactured by Nagase ChemteX Co., Ltd. EX-411 and EX-321, etc. ("Araldite" and "Denacol" are registered trademarks). Examples of amine epoxy resins include Epikote 604 manufactured by Japan Epoxy Resin Co., Ltd.; YH-434 manufactured by Toto Chemical Co., Ltd.; Mitsubishi Gas Chemical ) TETRAD-X and TETRAD-C manufactured by Co., Ltd.; ELM-120 manufactured by Sumitomo Chemical Co., Ltd., etc. Examples of the heterocyclic ring-containing epoxy resin include Araldite PT810 manufactured by Ciba Specialty Chemicals; ERL4234, ERL4299, ERL4221, ERL4206 manufactured by UCC, etc. These epoxy resins may be used singly, or two or more of them may be used in combination.

When an epoxy resin is used as the thermosetting resin, it is preferable to use an epoxy resin curing agent in combination.

As the epoxy resin curing agent, a known curing agent generally used can be used. Examples of epoxy resin hardeners include amines; polyamides; acid anhydrides; polysulfides; boron trifluoride; bisphenol A, bisphenol F, bisphenol S, etc. having two or more phenolic properties in one molecule Hydroxy bisphenols; phenol resins such as phenol novolak resin, bisphenol A novolak resin, and cresol novolak resin. In particular, from the viewpoint of excellent electrical corrosion resistance during moisture absorption, the epoxy resin curing agent is preferably a phenol resin such as a phenol novolak resin, a bisphenol A novolak resin, and a cresol novolak resin.

As a preferable one among the phenol resin hardeners, for example, the trade names manufactured by DIC Co., Ltd.: Phenolite LF2882, Phenolite LF2822, and Phenolite LF2822 Special (Phenolite) TD-2090, Phenolite TD-2149, Phenolite VH-4150, Phenolite VH4170, product name manufactured by Minghe Chemical Co., Ltd.: H-1, Japan Trade names manufactured by Japan Epoxy Resin Co., Ltd.: Epi-Cure MP402FPY, Epi-Cure YL6065, Epi-Cure YLH129B65 and Mitsui Chemicals Co., Ltd. Product names manufactured by the company: Milex XL, Milex XLC, Milex RN, Milex RS, Milex VR ("Phenolite" , "Epi-Cure" and "Milex" are registered trademarks).

With respect to 100 parts by mass of the (b1) thermoplastic resin, the blending amount of the (b2) curable component in the second layer is preferably 10 parts by mass to 500 parts by mass, more preferably 50 parts by mass to 300 parts by mass. If the blending amount of the curable component is within the above-mentioned range, the resin film for temporary fixation can have sufficient low-temperature adhesion, heat resistance, curability, and releasability. If the blending amount is 10 parts by mass or more, the adhesion to the support and the heat resistance are improved, and the retention during back grinding is also improved, and the wafer tends to be difficult to crack. On the other hand, if the blending amount is 500 parts by mass or less, the viscosity before hardening is difficult to become too low, it can be hardened in a relatively short time, and it can make the electronic parts on the support and self-supporting The tendency of coexistence of peelability.

In addition to the (b1) thermoplastic resin and (b2) curable component, the second layer may optionally contain a silicone compound (hereinafter, sometimes referred to as (b3) silicone compound), a curing accelerator (hereinafter, sometimes also Called (b4) hardening accelerator) and other ingredients.

(b3) The silicone compound mentioned above as (a2) silicone compound can be used.

Since the second layer contains the silicone compound, when the resin film for temporary fixation is peeled from the semiconductor wafer, the sealing body, and the support, it can be easily peeled without using a solvent even at a low temperature of 100° C. or less.

The compounding amount of the (b3) silicone compound in the second layer is preferably 0 parts by mass to 100 parts by mass, and more preferably 2 parts by mass to 80 parts by mass relative to 100 parts by mass of the thermoplastic resin (b1). (B3) If the blending amount of the silicone compound is within the above-mentioned range, it is possible to coexist the adhesiveness during processing of electronic parts and the releasability after processing.

(b4) The hardening accelerator can use those exemplified as (a3) the hardening accelerator. In the second layer, when (b1) the thermoplastic resin contains an epoxy-containing (meth)acrylic copolymer, it preferably contains a hardening accelerator that promotes hardening of the epoxy group contained in the acrylic copolymer. Agent.

The blending amount of the (b4) hardening accelerator in the second layer is preferably 0.01 parts by mass to 2.0 parts by mass relative to 100 parts by mass of the thermoplastic resin (b1). If the blending amount of (b4) hardening accelerator is 0.01 parts by mass or more with respect to 100 parts by mass of the thermoplastic resin (b1), the second layer can be sufficiently hardened during the thermal history in the manufacturing steps of the semiconductor element, so it can be more Securely fix electronic components and supports. If the blending amount of (b4) hardening accelerator is 2.0 parts by mass or less relative to 100 parts by mass of (b1) thermoplastic resin, the melt viscosity of the resin film for temporary fixation is unlikely to increase due to heating in the manufacturing step, and the film may be preserved The tendency of stability to become better.

As other ingredients, inorganic fillers, organic fillers, silane coupling 剂 etc.

As the inorganic filler, those described above can be used. Regarding the blending amount of the inorganic filler in the second layer, from the viewpoints of improving the handleability of the resin film for temporary fixation in the B-stage state and improving the low thermal expansion, it is preferably relative to 100 parts by mass of the (b1) thermoplastic resin It is 300 parts by mass or less, more preferably 200 parts by mass or less, and still more preferably 100 parts by mass or less. The lower limit of the content of the inorganic filler is not particularly limited, but it is preferably 5 parts by mass or more with respect to 100 parts by mass of the (b1) thermoplastic resin. By setting the content of the inorganic filler in the above range, there is a tendency that the adhesiveness of the second layer can be sufficiently ensured, and the desired function can be imparted.

As the organic filler, those described above can be used. The compounding amount of the organic filler is preferably 300 parts by mass or less, more preferably 200 parts by mass or less, and still more preferably 100 parts by mass or less with respect to 100 parts by mass of the thermoplastic resin (b1). The lower limit of the content of the organic filler is not particularly limited, but it is preferably 5 parts by mass or more with respect to 100 parts by mass of the thermoplastic resin.

The thickness of the second layer 22 is not particularly limited, but it is preferably 10 μm to 350 μm from the viewpoint of sufficiently fixing the electronic component and the support for transportation. If the thickness is 10 μm or more, the unevenness of the thickness at the time of coating is reduced. In addition, since the thickness is sufficient, the strength of the film or the cured product of the film is good, and the electronic components and the support for transportation can be more adequately fixed. If the thickness is 350μm or less, it is difficult to be flattened when bonded to the first layer 21, so it is difficult to produce unevenness in the thickness of the resin film for temporary fixation, and it is easy to reduce the residual solvent in the film by sufficient drying The amount can further reduce blistering when heating the cured product of the film.

In this embodiment, the ratio of the thickness of the first layer 21 to the second layer 22 preferably satisfies the relationship of formula (1), and more preferably satisfies the relationship of formula (2).

(1/10)a≦b≦10a...(1)

(1/5)a≦b≦6a...(2)

In the formula, a represents the thickness of the first layer 21, and b represents the thickness of the second layer 22.

If the ratio of the thickness of the first layer 21 to the second layer 22 is within the above range, the temporary fixing resin film can sufficiently fill the irregularities on the surface of the electronic parts such as semiconductor elements, and the electronic parts can be sufficiently fixed and transported. The propensity to use.

The shear viscosity of the first layer 21 before hardening is preferably 20000 Pa at 120°C. s or less, more preferably 18000Pa. s or less. If the shear viscosity at 120°C is 20000Pa. s or less, for example, when a pressure of 0.02 MPa to 0.2 MPa is applied for 1 minute to 5 minutes under the conditions of 70°C to 150°C and 5 mbar to 15 mbar, sufficient fluidity can be obtained, so it has unevenness such as bumps. The filling property of electronic parts is more excellent, and it is easier to perform crimping to electronic parts without creating voids. The shear viscosity at 120°C can also be 500Pa. s above.

From the viewpoint of film handling or adhesion to the support, the shear viscosity of the second layer 22 before curing is preferably 200 Pa at 120°C. s~30000Pa. s, more preferably 400Pa. s~27000Pa. s. If the shear viscosity is 200Pa. s or more, the operability of the film is further improved, if it is 30000Pa. s or less, it is easy to obtain sufficient adhesion.

The shear viscosity refers to the measured value under the following conditions: using Advanced Rheometric Expansion System (ARES) (manufactured by Rheometric Scientific), while imparting to the resin film for temporary fixation The deformation of 5% was measured while raising the temperature at a heating rate of 20°C/min.

The storage elastic modulus of the first layer 21 after curing is preferably 0.1 MPa to 1000 MPa, more preferably 1 MPa to 900 MPa at 25°C. If the storage elastic modulus at 25°C is 0.1 MPa or more, it is difficult to produce residual glue in the electronic parts during the peeling step. If the elastic modulus at 25°C is 1000 MPa or less, it will have bumps during the peeling step. It is difficult for electronic parts such as bumps and bumps to break the bumps and bumps. That is, in this embodiment, the first layer may be a layer attached to the electronic component.

The storage elastic modulus of the second layer 22 after curing is preferably 100 MPa or more at 25° C., more preferably 200 MPa or more. If the storage elastic modulus at 25° C. is 100 MPa or more, when the electronic component is thinned, there is a tendency that the electronic component and the support can be sufficiently fixed. The storage elastic modulus after curing can be 6000MPa or less at 25°C.

The relationship between the storage elastic modulus of the first layer 21 after curing and the storage elastic modulus of the second layer 22 after curing is preferably that the storage elastic modulus of the second layer 22 after curing is higher than that of the first layer 21 after curing. The storage elastic modulus is large. If the storage elastic modulus after curing is in this relationship, the possibility of residual glue in the electronic parts during the peeling step can be further reduced, and the bumps and other bumps on the electronic parts can be further prevented from being damaged. When the parts are thinned, the electronic parts can be fixed more firmly and Support body.

The storage elastic modulus refers to a measured value when a dynamic viscoelasticity measuring device (manufactured by UBM Co., Ltd.) is used to measure while raising the temperature at a temperature increase rate of 3°C/min.

The 30° peel strength of the first layer 21 with respect to electronic components such as silicon wafers at 25° C. is preferably 500 N/m or less, more preferably 450 N/m or less. If the 30° peeling strength is 500 N/m or less, the first layer can be peeled from the electronic component further without adhesive residue, and there is a tendency that the possibility of cracking of the electronic component during peeling can be reduced. The 30° peel strength can be 10N/m or more.

The 30° peel strength can be measured as follows. On the surface of a silicone mirror wafer (6 inches) with a thickness of 625 μm, grooves with a width of 40 μm and a depth of 40 μm were formed by blade dicing at 100 μm intervals. The silicon mirror wafer with a step difference manufactured in this way is placed on the platform of a vacuum laminator (manufactured by NPC (stock), LM-50X50-S) so that the step The temporary fixing resin film is set so that the first layer is attached to the side of the stepped silicon mirror wafer. It was heated and pressurized for 2 minutes at a temperature of 120° C. and a pressure of 0.1 MPa under the condition of 15 mbar, and vacuum lamination was performed to prepare a sample for measurement. The obtained measurement sample was hardened and cut into a width of 10 mm. The peeling test was performed on the peeling test machine at a speed of 300 mm/min with a peeling angle of 30°, and the peeling strength at this time was set to 30° peeling strength.

The 90° peel strength of the second layer 22 relative to the support, such as a silicon mirror wafer, at 25° C. is preferably 5N/m~200N/m, more preferably 6N/m~180N/m. If When the 90° peel strength is within the above range, the second layer can be peeled off from the support without further glue residue. If the 90° peel strength is 5N/m or more, the electronic parts and the support can be more firmly fixed in the polishing process. If it is 200N/m or less, the temporary fixing resin film can be peeled from the support. The second layer and the support can be peeled off without residual glue, which can further reduce the possibility of film remaining on the support.

The 90° peel strength can be measured as follows. Place a silicon mirror wafer (6 inches) with a thickness of 625μm on the platform of a vacuum laminator (manufactured by NPC (stock), LM-50X50-S), and set the temporary fixing resin film of this embodiment to the second The layer is attached to the side of the silicon mirror wafer. It was heated and pressurized for 2 minutes at a temperature of 120° C. and a pressure of 0.1 MPa under the condition of 15 mbar, and vacuum lamination was performed to prepare a sample for measurement. The obtained measurement sample was hardened and cut into a width of 10 mm. The peeling test was performed on the peeling test machine at a speed of 300 mm/min with a peeling angle of 90°, and the peeling strength at this time was set to 90° peeling strength.

[Manufacturing method of resin film for temporary fixation]

The resin film 1 for temporary fixation of this embodiment can be manufactured from the 1st resin sheet 2 shown in FIG. 2 and the 2nd resin sheet 3 shown in FIG. 3, for example.

Fig. 2(A) is a plan view showing an embodiment of the first resin sheet, and Fig. 2(B) is a schematic cross-sectional view taken along the line II-II of Fig. 2(A).

The first resin sheet 2 shown in FIG. 2 includes: a support film 10 having mold releasability, a first layer 21 provided on the support film 10, and a protective film provided on the side of the first layer 21 opposite to the support film 10 30.

Fig. 3(A) is a plan view showing an embodiment of a second resin sheet, Fig. 3(B) is a schematic cross-sectional view taken along the line III-III of Fig. 3(A).

The second resin sheet 3 shown in FIG. 3 includes: a support film 10 having mold releasability, a second layer 22 provided on the support film 10, and a protective film provided on the side opposite to the support film 10 of the second layer 22 30.

The resin film 1 for temporary fixation can be, for example, peeled off the protective film 30 from the first resin sheet 2 and the second resin sheet 3, and the first resin film can be laminated at 60°C to 120°C by roll laminate or the like. The layer 21 surface and the second layer 22 surface are bonded to each other to be manufactured.

The first layer 21 and the second layer 22 of this embodiment can be prepared by mixing and kneading the components in an organic solvent to prepare a varnish, and coating the prepared varnish on the support film 10 and drying it. form. In this way, the resin sheet 2 and the resin sheet 3 provided with the first layer 21 or the second layer 22 on the support film 10 can be manufactured separately.

The organic solvent is not particularly limited, and can be determined from the boiling point in consideration of volatility during film formation. Specifically, from the viewpoint that it is difficult to harden the film during film formation, methanol, ethanol, 2-methoxyethanol, 2-ethoxyethanol, 2-butoxyethanol, and methyl ethyl are preferred. Solvents with relatively low boiling points such as base ketone, acetone, methyl isobutyl ketone, toluene, and xylene. In addition, for the purpose of improving film forming properties, etc., it is preferable to use a solvent with a relatively high boiling point, such as dimethylacetamide, dimethylformamide, N-methylpyrrolidone, and cyclohexanone. These solvents may be used alone or in combination of two or more. The solid content concentration in the varnish is preferably 10% by mass to 80% by mass.

The mixing and kneading can be performed in appropriate combination using a dispersing machine such as a general mixer, a crusher, a three-rod roll mill, or a bead mill. The heating and drying are not special as long as the solvent used is fully volatilized. Don't limit it, usually it can be heated at 60℃~200℃ for 0.1 minute to 90 minutes.

The protective film 30 may be attached to the first layer 21 or the second layer 22 provided on the supporting film 10 as needed. In this case, the above-mentioned first resin sheet 2 or second resin sheet 3 having a three-layer structure including the support film 10, the first layer 21 or the second layer 22, and the protective film 30 can be obtained.

The first resin sheet 2 or the second resin sheet 3 thus obtained can be easily stored, for example, by being wound into a roll shape. In addition, the roll-shaped film may be cut into a suitable size, made into a sheet, and stored. In addition, the resin film 1 for temporary fixation of this embodiment obtained by bonding these films together can also be easily stored by winding up in a roll shape in the same way.

The support film 10 is not particularly limited, and examples thereof include polyethylene terephthalate, polybutylene terephthalate, polyethylene naphthalate, polyethylene, polypropylene, polyamide, and polyamide. Imine. From the viewpoint of excellent flexibility and toughness, the support film 10 is preferably polyethylene terephthalate, polybutylene terephthalate, polyethylene naphthalate, polypropylene, and polyamide. Or polyimide. In addition, from the viewpoint of improving the releasability from the resin film (resin layer), it is preferable to use a film subjected to a mold release treatment with a silicone compound, a fluorine compound, or the like as the supporting film.

The thickness of the supporting film 10 can be appropriately changed according to the target flexibility, and is preferably 3 μm to 350 μm. If the thickness is 3 μm or more, the film strength is sufficient, and if it is 350 μm or less, there is a tendency that sufficient flexibility can be obtained. From this viewpoint, the thickness of the support film 10 is more preferably 5 μm to 200 μm, and still more preferably 7 μm to 150 μm.

The protective film 30 is not particularly limited, and examples thereof include polyethylene terephthalate, polybutylene terephthalate, polyethylene naphthalate, polyethylene, and polybutylene terephthalate. Propylene. From the viewpoint of flexibility and toughness, the protective film 30 is preferably polyethylene terephthalate, polyethylene, or polypropylene. In addition, from the viewpoint of improving the releasability from the resin film (resin layer) for temporary fixation, it is preferable to use a film subjected to a mold release treatment with a silicone compound, a fluorine compound, or the like as the protective film 30.

The thickness of the protective film 30 can be appropriately set according to the target flexibility, for example, it is preferably 10 μm to 350 μm. If the thickness is 10 μm or more, the film strength is better, and if it is 350 μm or less, flexibility can be further obtained. From this viewpoint, the thickness of the protective film 30 is more preferably 15 μm to 200 μm, and still more preferably 20 μm to 150 μm.

As another embodiment of the resin film for temporary fixation, there are those shown in Figs. 4(A) and 4(B). The resin film sheet 4 for temporary fixation shown in FIGS. 4(A) and 4(B) except that the resin film for temporary fixation 20 and the support film 10 on the second layer 22 side are pre-cut according to the shape of the temporarily fixed member. It has the same structure as the resin film 1 for temporary fixation. In addition, in FIGS. 4(A) and 4(B), the cut-out resin film for temporary fixation 20 and the outer edge of the support film 10 are removed, but the resin film for temporary fixation may also be used in accordance with the shape of the temporarily fixed member. A slit is provided in the film and the supporting film, leaving the outer edge portion.

In addition, as another embodiment, a resin film group including the first resin sheet 2 and the second resin sheet 3 can be cited. According to the resin film group of this embodiment, when using (processing an electronic component), the 1st layer and the 2nd layer of these resin sheets can be bonded together, and can be used as a resin film for temporary fixation.

If you use the resin film for temporary fixation with the structure described above, it can be used in The processing of electronic parts is performed well at high temperature, and it can be easily peeled off from the processed electronic parts and supports even at room temperature, and it can prevent the residual glue on the electronic parts and supports.

[Processing method of electronic parts]

The processing method of the electronic component using the resin film for temporary fixation of this embodiment is roughly divided and has the following four steps. Equipped with: (a) the step of temporarily fixing the electronic part and the support via the temporary fixing resin film; (b) the processing step of processing the electronic part temporarily fixed on the support; (c) the processed electronic part The separation step of separating the self-supporting body and the resin film for temporary fixation; and (d) the cleaning step of cleaning when there is residue on the electronic part.

5(A), 5(B), and 5(C) are schematic cross-sectional views for explaining an embodiment of the processing method of the electronic component, and FIG. 5(D) is a plan view showing the processed electronic component.

<(a) Temporary fixing step>

FIG. 5(A) shows that a film-like temporary fixing material 40 composed of two layers of the first layer 41 and the second layer 42 is interposed between the support 50 and the electronic component 60 to temporarily fix the electronic component 60 to the support 50 On the steps. At this time, the temporary fixing material 40 in the form of a film is arranged such that the first layer 41 contacts the electronic component 60 side and the second layer 42 contacts the support 50 side.

The thickness of the electronic component 60 is not particularly limited, and it can be set to 600 μm to 800 μm.

(a-1) Form the temporary fixing material 40 on the support 50

The second layer 22 side of the resin film 20 for temporary fixation is laminated on the support 50 using a roll laminator, a vacuum laminator, etc., whereby a film-like temporary fixation material 40 can be provided.

The material of the support in this embodiment is not particularly limited, and substrates such as silicon wafers, glass wafers, and quartz wafers can be used.

The support may be peeled off, and the peeling layer 52 may be formed by peeling off all or a part of the surface of the support 50 as shown in FIG. 5(A). The peeling agent used in the peeling treatment is not particularly limited. For example, surface modifiers with fluorine elements, polyolefin waxes and silicone oils, silicone oils containing reactive groups, and silicone modified alkyd resins have excellent releasability. good.

(a-2) Attachment of electronic parts 60

Next, on a wafer bonding apparatus or a vacuum laminator, a support 50 formed with a film-like temporary fixing material 40 is set, and the electronic component 60 is pressed by a press to be attached to the first layer 41 side.

In the case of using a wafer bonding device, for example, use a vacuum press EVG520IS (trade name) manufactured by EVG Company, at an air pressure of 1hPa or less, a crimping pressure of 1MPa, a crimping temperature of 60°C to 200°C, and a holding time of 100 seconds to 300 Under the second condition, the electronic component 60 and the support 50 are temporarily fixed via the film-shaped temporary fixing material 40.

In the case of using a vacuum laminator, for example, the vacuum laminator LM-50X50-S (trade name) manufactured by NPC Co., Ltd., and the vacuum laminator manufactured by Nichigo-Morton Co., Ltd. can be used. Machine V130 (commodity name). Pressure is below 1hPa; crimping temperature is 40℃~180℃, preferably 60℃~150℃; lamination pressure is 0.01MPa~0.5MPa, preferably 0.1MPa~0.5MPa; holding time is 1 second to 600 seconds, more Preferably, under the pressing condition of 30 seconds to 300 seconds, the electronic component 60 and the support 50 are temporarily fixed via the film-shaped temporary fixing material 40.

As an electronic component, a semiconductor element etc. are mentioned. The material of electronic parts is not particularly limited, and substrates such as silicon wafers, glass wafers, quartz wafers, and semiconductor wafers can be used.

(a-3) Curing of resin film for temporary fixation

After the electronic component 60 and the support 50 are temporarily fixed via the film-shaped temporary fixing material 40, the film-shaped temporary fixing material 40 is cured. As long as the film can be hardened, the hardening method is not particularly limited, and there is a method by heat or radiation irradiation. As the hardening method, among them, hardening by heat is preferred. In the case of curing by heat, the curing conditions are preferably curing at 100°C to 200°C for 10 minutes to 300 minutes, more preferably 20 minutes to 210 minutes. If the temperature is 100°C or higher, the film is sufficiently hardened and difficult to cause problems in the processing steps, and if the temperature is 200°C or lower, outgassing is unlikely to be generated during curing of the film, and peeling of the film can be further suppressed. In addition, if the curing time is 10 minutes or more, it is difficult to cause problems in the processing steps, and if it is 300 minutes or less, the work efficiency is unlikely to deteriorate. The temporary fixing material 40 is cured to become a temporary fixing material 70 having a hardened first layer 71 and a hardened second layer 72.

<(b) Processing Steps>

The processing steps include grinding, electrode formation, and metal matching used at the wafer level. Line formation, protective film formation, etc. The polishing method is not particularly limited, and a known polishing method can be used. The polishing is preferably performed while cooling the electronic parts and abrasives (diamonds, etc.) with water.

For example, as shown in FIG. 5(B), the back surface of the electronic component 80, that is, the surface of the electronic component 80 opposite to the side in contact with the film-shaped temporary fixing material 70, is polished by the grinder 90, for example, The thickness of about 700 μm is reduced to 100 μm or less.

As a device for grinding processing, for example, DGP-8761 (trade name) manufactured by DISCO Co., Ltd., etc., and the cutting conditions in this case can be arbitrarily selected according to the thickness and grinding state of the electronic parts required select.

Specifically, other steps include: metal sputtering to form electrodes, wet etching to etch the metal sputtered layer, coating of resist to cover when forming metal wiring, and exposure. Pattern formation of development, stripping of resist, dry etching, formation of metal plating, silicon etching to form TSV, formation of oxide film on silicon surface, etc. are well-known processes.

FIG. 5(C) shows an example in which dry ion etching or Bosch process is performed on the back side of the thinned semiconductor wafer 80 to form through holes and then copper plating is performed to form through electrodes 82 .

In this way, the predetermined processing is performed on the electronic component 80. FIG. 5(D) is a plan view of the electronic component 80 after processing. The processed electronic component 80 is further singulated into semiconductor elements by cutting along the cutting line 84.

<(c) Separation step>

6(A), FIG. 6(B), and FIG. 6(C) are schematic cross-sectional views for explaining one embodiment of the separation step of separating the processed electronic component from the support and the film-like temporary fixing material. The separation step of the present embodiment includes a first peeling step of peeling the electronic component from the support, and a second peeling step of peeling the film-shaped temporary fixing material from the support. The first peeling step is a step of peeling the electronic component processed in the processing step from the support, that is, the step of peeling the electronic component that has been thinned from the support before cutting. As a peeling method, one can fix one of the electronic part or the support horizontally, and lift the other at a certain angle from the horizontal direction; and stick a protective film on the polished surface of the electronic part to attach the electronic part and The method in which the protective film is peeled from the support in a tear-and-pull manner, etc., can be used without particular limitation.

In this embodiment, any of these peeling methods can be applied. As a peeling method, among them, the following method is more suitable: as shown in FIG. 6(A), one of the electronic component 80 or the support 50 is fixed horizontally, and the other is lifted from the horizontal direction at a certain angle, etc. In this way, an electronic component 80 can be obtained (refer to FIG. 6(C)). In this embodiment, by forming a film-like temporary fixing material by using the resin film for temporary fixing of this embodiment, it is possible to easily obtain an electronic component in which residues such as glue residue are sufficiently reduced. These peeling methods are usually carried out at room temperature, but can also be carried out at a temperature of about 40°C to 100°C that does not cause damage to electronic parts. For mechanical disassembly, for example, a Debonder (manufactured by SUSS Co., Ltd., DB12T), a De-Bonding device (manufactured by EVG, EVG805EZD), etc. can be used.

In the second peeling step, for example, as shown in FIG. 6(B), the electronic component 80 is fixed horizontally, and the end of the film-like temporary fixing material 70 is lifted at a certain angle from the horizontal direction, thereby obtaining a temporary The electronic component 80 with peeled material is fixed, and the support can be recycled.

<(d) Cleaning step>

Part of the temporary fixing material is likely to remain on the circuit forming surface of the electronic component. When a part of the temporary fixing material remains on the circuit forming surface of the peeled electronic component, a cleaning step to remove it can be provided. The removal of the temporary fixing material can be performed, for example, by cleaning the electronic parts.

The cleaning liquid is not particularly limited as long as it can remove a part of the remaining temporary fixing resin film. As such a cleaning liquid, the above-mentioned organic solvents which can be used for diluting the resin film composition for temporary fixation are mentioned, for example. These organic solvents may be used alone or in combination of two or more.

In addition, when the remaining resin film for temporary fixation is difficult to remove, alkalis and acids may be added to the organic solvent. As examples of bases, amines such as ethanolamine, diethanolamine, triethanolamine, triethylamine, and ammonia; and ammonium salts such as tetramethylammonium hydroxide can be used. As the acid, organic acids such as acetic acid, oxalic acid, benzenesulfonic acid, and dodecylbenzenesulfonic acid can be used. The addition amount is based on the concentration in the cleaning solution, and is preferably 0.01% by mass to 10% by mass. In addition, in order to improve the removability of residues, an existing surfactant may be added to the cleaning solution.

The cleaning method is not particularly limited, and examples thereof include: a method of cleaning with a liquid coating method using the cleaning liquid, a cleaning method using spray spray, and immersion in The method of cleaning the tank. The temperature is suitably 10°C to 80°C, preferably 15°C to 65°C, and finally water washing or alcohol washing is performed, and drying treatment is performed to obtain a thin electronic component 80.

In addition, as described above, according to the resin composition for temporary fixation of this embodiment, residues such as glue residue can be sufficiently reduced, so the cleaning step can be omitted.

Regarding the processed electronic component 80, the through electrode 82 is formed in the same manner as described above, and is further diced along the cutting line 84 to be singulated into semiconductor elements (see FIG. 6(D)).

In this embodiment, by connecting the obtained semiconductor element to another semiconductor element or a substrate for mounting a semiconductor element, an electronic device can be manufactured.

Fig. 7(A) and Fig. 7(B) are schematic cross-sectional views for explaining one embodiment of the manufacturing method of the electronic equipment device. First, by the method described above, a semiconductor element 100 in which through electrodes 86 are formed and singulated is prepared (FIG. 7(A) ). Then, a plurality of semiconductor elements 100 are laminated on the wiring board 110, thereby obtaining an electronic device 120 (FIG. 7(B)).

As mentioned above, suitable embodiments of the resin film for temporary fixation of the present invention and the method of manufacturing thinned electronic parts using the resin film for temporary fixation have been described. However, the present invention is not necessarily limited to the above-mentioned embodiments, and may be Make appropriate changes within the scope of deviating from its purpose.

[Example]

Hereinafter, the present invention will be further specifically described with examples and comparative examples, but the present invention is not limited to the following examples.

[Synthesis of polyimide resin PI-1]

Add BAPP (trade name, manufactured by Tokyo Chemical Industry Co., Ltd., 2,2-bis[4-() as a diamine into a flask equipped with a stirrer, a thermometer, a nitrogen replacement device (nitrogen inflow tube), and a reflux cooler with a water receiver. 4-aminophenoxy)phenyl]propane, molecular weight: 410.51) 10.26g (0.025mol) and 1,4-butanediol bis(3-aminopropyl)ether (manufactured by Tokyo Chemical Industry, trade name: B -12, molecular weight: 204.31) 5.10g (0.025mol), and 100g of N-Methyl-2-pyrrolidone (NMP) as a solvent, and stir to dissolve the diamine in the solvent in. While cooling the flask in an ice bath, 26.11 g (0.05 mol) of decamethylene bistrimellitate dianhydride (DBTA) was added to the solution in the flask in small amounts. After the addition was completed, the solution was heated up to 180°C and kept for 5 hours while blowing in nitrogen, thereby obtaining polyimide resin PI-1. Polyimide resin PI-1 is a thermoplastic resin with a weight average molecular weight of 50,000 and a Tg of 70°C. The polyimide resin PI-1 was prepared and used so that the solid content concentration in NMP became 50% by mass. In addition, the compounding amount of PI-1 shown in Table 1 and Table 2 is the mass part of solid content.

[Synthesis of Acrylic Rubber K-1]

In a 500 cc separable flask equipped with a stirrer, a thermometer, a nitrogen replacement device (nitrogen inflow pipe) and a reflux cooler with a water catcher, 200 g of deionized water, 60 g of butyl acrylate, 10 g of methyl methacrylate, and a 10 g of 2-hydroxy ethyl acrylate, 20 g of glycidyl methacrylate, 1.94 g of 1.8% polyvinyl alcohol aqueous solution, 0.2 g of lauryl peroxide, and 0.08 g of n-octyl mercaptan. Then, after blowing N ₂ gas into the flask for 60 minutes to remove the air in the system, the temperature in the system was increased to 65° C. to perform polymerization for 5 hours. Furthermore, the temperature in the system was increased to 90°C and stirring was continued for 2 hours to complete the polymerization. The transparent beads obtained by the polymerization reaction were separated by filtration, washed with deionized water, and then dried with a vacuum dryer at 50° C. for 6 hours to obtain acrylic rubber K-1. The acrylic rubber K-1 was measured by GPC. As a result, the weight average molecular weight of the acrylic rubber K-1 was 300,000 in terms of polystyrene. In addition, the Tg of acrylic rubber K-1 is -20°C.

[Synthesis of Acrylic Rubber K-2]

In a 500 cc separable flask equipped with a stirrer, a thermometer, a nitrogen replacement device (nitrogen inflow tube), and a reflux cooler with a water catcher, 200 g of deionized water, 70 g of butyl acrylate, 10 g of methyl methacrylate, and a 10 g of 2-hydroxy ethyl acrylate, 10 g of glycidyl methacrylate, 1.94 g of 1.8% polyvinyl alcohol aqueous solution, 0.2 g of lauryl peroxide, and 0.06 g of n-octyl mercaptan. Then, after blowing N ₂ gas into the flask for 60 minutes to remove air in the system, the temperature in the system was increased to 65° C. to perform polymerization for 5 hours. Furthermore, the temperature in the system was increased to 90°C and stirring was continued for 2 hours to complete the polymerization. The transparent beads obtained by the polymerization reaction were separated by filtration, washed with deionized water, and then dried with a vacuum dryer at 50° C. for 6 hours to obtain acrylic rubber K-2. The acrylic rubber K-2 was measured by GPC. As a result, the weight average molecular weight of the acrylic rubber K-2 was 400,000 in terms of polystyrene. In addition, the Tg of acrylic rubber K-2 is -28°C.

(Example 1~Example 11, Comparative Example 1~Comparative Example 2)

[Preparation of Resin Film for Temporary Fixation]

Prepared with the composition of the mass parts shown in Table 1 to Table 3 to form the first layer and the first layer Two-layer varnish. Coating the prepared varnish on the release-treated surface of a release-treated polyethylene terephthalate film (manufactured by Teijin-Dupont Film Co., Ltd., A31, thickness 38μm), Heat and dry at 90°C for 5 minutes and at 140°C for 5 minutes. Then, the film is further attached to the resin layer as a protective film to obtain a first resin sheet and a second resin sheet with a protective film and a supporting film, respectively. The protective film was peeled off from each resin sheet, and the first layer and the second layer were bonded by roll lamination at 60°C to obtain each resin film for temporary fixation.

[Table 1]

The details of each component in Table 1 to Table 3 are as follows.

. Thermoplastic resin

HTR-280-CHN: Acrylic rubber with a weight average molecular weight of 900,000 and Tg-28°C obtained by GPC (manufactured by Nagase ChemteX Co., Ltd.)

HTR-280-Mw1: The weight average molecular weight obtained by GPC is 600,000, Acrylic rubber with Tg-28°C (manufactured by Nagase ChemteX Co., Ltd.)

HTR-860P-3CSP: Acrylic rubber with a weight average molecular weight of 800,000 and a Tg of 12°C obtained by GPC (manufactured by Nagase ChemteX Co., Ltd.)

HTR-860P-3CSP-30B: Acrylic rubber with a weight average molecular weight of 300,000 and a Tg of 12°C obtained by GPC (manufactured by Nagase ChemteX Co., Ltd.)

Acrylic rubber K-1: acrylic rubber synthesized in the above (weight average molecular weight obtained by GPC is 300,000, Tg-20°C)

Acrylic rubber K-2: Acrylic rubber synthesized in the above (weight average molecular weight obtained by GPC is 400,000, Tg-28°C)

Polyimide resin PI-1: The polyimide resin synthesized above (weight average molecular weight obtained by GPC is 50,000, Tg 70°C)

. Hardening ingredients

YDCN-700-10: Cresol novolac type multifunctional epoxy resin (manufactured by Nippon Steel & Sumikin Chemical Co., Ltd.)

YDF-8170C: Bisphenol F type bifunctional epoxy resin (manufactured by Nippon Steel & Sumikin Chemical Co., Ltd.)

XLC-LL: Phenol aralkyl resin (manufactured by Mitsui Chemicals Co., Ltd.)

. Silicone compound

KF105: Epoxy modified silicone compound (manufactured by Shin-Etsu Silicone Co., Ltd.)

SH550: Methyl phenyl silicone compound (manufactured by Toray Dow Chemical Co., Ltd.)

SH3773M: Polyether modified silicone compound (manufactured by Toray Dow Corning Co., Ltd.)

TA31-209E: Silicone modified alkyd resin (manufactured by Hitachi Chemical Polymer Co., Ltd.)

BYK-UV3500: Polyether. Acrylic modified silicone compound (manufactured by BYK)

. Hardening accelerator

2PZ-CN: Imidazole-based hardening accelerator (manufactured by Shikoku Chemical Industry Co., Ltd.)

. filler

SC2050-HLG: Silica filler (manufactured by Admatechs Co., Ltd.)

Regarding the prepared resin films for temporary fixation of the examples and comparative examples, the shear viscosity, step filling properties, heat resistance at 200°C, elastic modulus after curing, and the first layer of the resin film were evaluated according to the methods shown below. 30° peel strength, 90° peel strength and peelability of the second layer. The evaluation results are shown in Table 4 and Table 5.

[Measurement of Shear Viscosity Before Hardening]

Regarding the first layer and the second layer in the resin film for temporary fixation, the shear viscosity before curing was evaluated by the following method. Regarding the single-layer film for measurement in which either the first layer or the second layer is adjusted to a thickness of 120 μm, it is laminated at 80°C and a rotary type is used A viscoelasticity measuring device (manufactured by TA Instruments Co., Ltd., ARES) measures the shear viscosity. The measurement method is "parall plate", the measurement jig is a circular jig with a diameter of 8mm, the measurement mode is "Dynamic temperature ramp", and the frequency is 1Hz, while at 35°C. While imparting a 5% deformation to the single-layer film for measurement, the temperature was increased to 120°C at a temperature increase rate of 20°C/min, and the viscosity of the film for measurement when it reached 120°C was measured.

[Gradability Landfill]

The step filling property of the resin film for temporary fixation was evaluated by the following method. On the surface of a silicon mirror wafer (6 inches) with a thickness of 625μm, the second layer side of the resin film for temporary fixation was laminated by roll lamination at 80°C to obtain a wafer with a resin film for temporary fixation. Next, on the surface of a silicon mirror wafer (6 inches) with a thickness of 625 μm, the grooves with a width of 40 μm and a depth of 40 μm are formed by blade dicing at 100 μm intervals. Put the silicon mirror wafer with step difference produced in this way on the platform of a vacuum laminator (manufactured by NPC (stock), LM-50X50-S) with the step difference as the top, and make the above The wafer with the resin film for temporary fixation is set so that the first layer of the resin film for temporary fixation is attached to the side of the stepped silicon mirror wafer with the surface of the temporary fixation resin film facing down. It was heated and pressurized for 2 minutes at a temperature of 120° C. and a pressure of 0.1 MPa under the condition of 15 mbar, and vacuum lamination was performed.

Thereafter, an ultrasonic microscope (SAM, manufactured by Insight Co., Ltd., Insight-300) was used to confirm the state of the resin film for temporary fixation. The evaluation criteria for landfill properties are as follows.

A: The proportion of voids is less than 5%.

B: The ratio of voids is 5% or more.

[Evaluation of heat resistance at 200°C]

The 200°C heat resistance of the resin film for temporary fixation was evaluated by the following method. A silicon mirror wafer (6 inches) with a thickness of 625μm is diced by a blade into small pieces into a 25mm square. At 80°C, the second layer side of the resin film for temporary fixation was attached to the surface of the small-piece silicon mirror wafer to perform roll lamination. Next, at 80°C, a glass slide with a thickness of 0.1 mm to 0.2 mm and a size of about 18 mm square was laminated on the first layer side of the resin film for temporary fixation by roll-laminating to make the resin film for temporary fixation made of silicon A laminate sample held between a wafer and a glass slide. The obtained sample was heated at 130°C for 30 minutes, then heated at 170°C for 1 minute to harden the resin film for temporary fixation, and thereafter heated at 200°C for 30 minutes. The sample thus obtained was observed from the surface of the slide glass, and the image was analyzed using software such as Phtoshop (registered trademark), and the heat resistance at 200°C was evaluated based on the proportion of voids in the entire area of the resin film for temporary fixation. The evaluation criteria are as follows.

A: The ratio of voids is less than 5%.

B: The ratio of voids is 5% or more.

[Storage elastic modulus after curing]

Regarding the first layer and the second layer in the resin film for temporary fixation, the storage elastic modulus after curing was evaluated by the following method. The single-layer film for measurement in which either the first layer or the second layer was adjusted to a thickness of 120 μm was laminated at 80°C. This was heated in an oven at 110°C for 30 minutes, and further heated at 170°C for 1 hour to harden the film, and then cut into a thickness direction of 4 mm in width and 33 mm in length. Will be cut out The single-layer film for measurement is set on a dynamic viscoelastic device (product name: Rheogel-E4000, manufactured by UMB (stock)), and a tensile load is applied. The measurement is performed at a frequency of 10 Hz and a heating rate of 3°C/min. The storage modulus of elasticity.

[30°Peel strength]

The 30° peel strength between the silicon wafer and the resin film for temporary fixation (first layer) was evaluated by the following method. On the surface of a silicon mirror wafer (6 inches) with a thickness of 625 μm, grooves with a width of 40 μm and a depth of 40 μm were formed by cutting with a blade at 100 μm intervals. Place the silicon mirror wafer with a step difference made in this way on the platform of a vacuum laminator (manufactured by NPC (stock), LM-50X50-S) so that the step difference becomes above, and it will be temporarily fixed for use The resin film is set so that the first layer is attached to the side of the silicon mirror wafer with a step difference, heated and pressurized at a temperature of 120° C. and a pressure of 0.1 MPa for 2 minutes under the condition of 15 mbar, and vacuum lamination is performed. The obtained sample was heated at 130°C for 30 minutes, and then heated at 170°C for 1 hour to harden it. After this was further heated at 200°C for 30 minutes, it was cut into a width of 10 mm to prepare a film for measurement. A peel test was performed on the film for measurement at a speed of 300 mm/min by a peel tester with a peel angle of 30°, and the peel strength at this time was set to 30° peel strength.

[90°Peel Strength]

The 90° peel strength between the silicon mirror wafer and the temporary fixing resin film (second layer) was evaluated by the following method. Place a silicon mirror wafer (6 inches) with a thickness of 625μm on the platform of a vacuum laminator (manufactured by NPC (stock), LM-50X50-S), and set the resin film for temporary fixation as the second layer to be attached to The silicon mirror wafer side is heated and pressurized for 2 minutes at a temperature of 120°C and a pressure of 0.1 MPa under the condition of 15 mbar. Vacuum lamination. The obtained sample was heated at 130°C for 30 minutes, and then heated at 170°C for 1 hour to harden it. After this was further heated at 200°C for 30 minutes, it was cut into a width of 10 mm to prepare a film for measurement. A peel test was performed on the film for measurement at a speed of 300 mm/min by a peel tester with a peel angle of 90°, and the peel strength at this time was set to 90° peel strength.

[Peelability]

The releasability of the resin film for temporary fixation by a peeling device was evaluated by the following method. A silicon mirror wafer is used as a support, and the resin film for temporary fixation is attached by roll lamination to the silicon mirror wafer with the second layer side attached to the silicon mirror wafer at 80°C to obtain temporary fixation. Support with resin film. Next, on the surface of a silicon mirror wafer (8 inches) with a thickness of 725 μm, a groove with a width of 40 μm and a depth of 40 μm was formed at 100 μm intervals by blade cutting to prepare a silicon wafer with a step difference on the surface. The first layer of the resin film for temporary fixation with the support of the resin film for temporary fixation is bonded so that the first layer of the resin film for temporary fixation is in contact with the step side of the silicon wafer. It is manufactured by a vacuum bonding device (AYUMI) VE07-14), heated and pressurized for 2 minutes at a temperature of 120°C and a pressure of 0.1 MPa under the condition of 5 mbar to obtain a laminate. The laminate thus obtained was heated at 130°C for 30 minutes, and then heated at 170°C for 1 hour, thereby curing the resin film for temporary fixation. Then, after heating it at 200°C for 30 minutes, a sharp-tip tweezers were inserted between the step side of the silicon wafer and the first layer side of the temporary fixing resin film, and the tweezers were moved along the outer edge. The silicon wafer and the support that can be peeled without cracking are set to A, and the one that cannot be peeled or the damage is visible is set to B.

[Table 4]

[table 5]

As shown in Table 4 and Table 5, the resin film for temporary fixation of the Example is excellent in the step filling property and heat resistance to a silicon wafer. In addition, it was confirmed that the 30° peel strength between the silicon wafer and the first layer side of the temporary fixing resin film was low, and the 90° peel strength between the silicon mirror wafer and the second layer side of the temporary fixing resin film was also low. Low, so good peelability.

[Industrial availability]

According to the present invention, it is possible to provide a resin film for temporary fixation that can perform processing of electronic components well and can be easily peeled off from the processed electronic components and the support.

Claims (14)

A method of processing electronic parts, comprising: (a) a step of temporarily fixing an electronic part and a support via a resin film for temporary fixing, and the resin film for temporary fixing used in the step (a) includes : The first layer includes a first thermoplastic resin with a glass transition temperature of -50°C to 50°C; and the second layer includes a second thermoplastic resin with a glass transition temperature of -50°C to 50°C and a curable component; (b) ) A processing step of processing the electronic component temporarily fixed on the support; (c) a separation step of separating the processed electronic component from the support and the temporary fixing resin film, so The separation step includes the step of peeling the processed electronic component and the temporary fixing resin film including the first layer and the second layer from the support in the processing step. A first peeling step, and a second peeling step of peeling the electronic component from the temporary fixing resin film including the first layer and the second layer in a tear-and-pull manner. The method for processing electronic parts as described in the first item of the patent application, wherein the resin film for temporary fixation in the step (a) is heated at 110°C for 30 minutes, and then at 170°C for 1 hour The storage elastic modulus of the first layer after heating to harden the film is 0.1 MPa to 1000 MPa at 25°C; Heating at 110°C for 30 minutes, and further heating at 170°C for 1 hour, so that the storage elastic modulus of the second layer after the film is cured is 100 MPa or more at 25°C; the second layer after curing The storage modulus of elasticity is greater than the storage modulus of the first layer after hardening. The method for processing electronic parts as described in item 1 or item 2 of the scope of patent application, wherein in the resin film for temporary fixation in the step (a), the shear viscosity of the first layer is 120°C Below is 20000Pa. s or less; the shear viscosity of the second layer is 200Pa at 120°C. s~30000Pa. s. The method for processing electronic parts as described in item 1 or item 2 of the scope of patent application, wherein in the resin film for temporary fixation in the step (a), relative to 100 parts by mass of the second thermoplastic resin, The content of the curable component in the second layer is 10 parts by mass to 500 parts by mass. The method for processing electronic parts as described in item 1 or item 2 of the scope of patent application, wherein in the resin film for temporary fixation in step (a), the thickness of the first layer is 10 μm to 350 μm, The thickness of the second layer is 10 μm to 350 μm. The method for processing an electronic component as described in claim 1 or 2, wherein in the resin film for temporary fixation in the step (a), the thickness of the first layer and the second The thickness of the layer satisfies the relationship of the following formula (1); (1/10) a≦b≦10a...(1) In formula (1), a represents the thickness of the first layer, and b represents the thickness of the second layer. The method for processing electronic parts as described in item 1 or item 2 of the scope of patent application, wherein in the resin film for temporary fixation in the step (a), the first thermoplastic resin has a cross-linking function Based on thermoplastic resin with a weight average molecular weight of 100,000 to 1.2 million. The method for processing electronic parts as described in item 1 or item 2 of the scope of the patent application, wherein in the resin film for temporary fixation in the step (a), the second thermoplastic resin has a crosslinkable function Based on thermoplastic resin with a weight average molecular weight of 100,000 to 1.2 million. The method for processing an electronic component according to the first or second patent application, wherein in the resin film for temporary fixation in the step (a), the curable component is a thermosetting resin. The method for processing an electronic component according to item 1 or item 2 of the scope of patent application, wherein in the resin film for temporary fixation in the step (a), the first layer further contains a silicone compound. The resin film for temporary fixation according to item 1 or item 2 of the scope of patent application, wherein in the resin film for temporary fixation in the step (a), the second layer further contains a silicone compound. The method for processing electronic parts as described in item 1 or item 2 of the scope of patent application, wherein in the resin film for temporary fixation in the step (a), the silicone compound in the first layer is formulated Amount, relative to the first thermoplastic 100 parts by mass of the resin is 2 parts by mass to 100 parts by mass; the blending amount of the silicone compound in the second layer is 2 parts by mass to 100 parts by mass relative to 100 parts by mass of the second thermoplastic resin Copies. The method for processing an electronic component according to item 1 or item 2 of the scope of patent application, wherein in the resin film for temporary fixation in the step (a), the first layer further contains a hardening accelerator. The resin film for temporary fixation as described in item 1 or item 2 of the scope of patent application, wherein in the resin film for temporary fixation in the step (a), the second layer further contains a hardening accelerator.

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