JP2017204612A - Electronic component support member - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an electronic component support member which makes possible to fix an electronic component regardless of a surface geometric condition of the electronic component without forming any gap, to achieve a thin electronic component reduced in thickness by grinding and to perform a heat treatment, and which can be detached from the electronic component after the above processes readily.SOLUTION: An electronic component support member comprises (A)a resin film base material, and (B)a resin layer on the side of one face of the resin film base material (A). The resin layer (B) includes: (C)a release layer having, as a principal face, a face of the resin layer (B) on the opposite side to the resin film base material (A); and (D)a high-elastic modulus layer provided between the release layer (C) and the resin film base material (A). The release layer (C) comprises a thermoplastic resin composition including (C1)a thermoplastic resin and (C2)a silicone-modified resin. The high-elastic modulus layer (D) comprises a curable resin composition including (D1)a thermoplastic resin, (D2)a curable component, and (D3)a curing accelerator.SELECTED DRAWING: Figure 1

Description

  The present invention relates to an electronic component support member. More specifically, the present invention includes, for example, an electronic component fixing step for fixing to an electronic component, an electronic component thinning step for thinning the electronic component, and a process involving heating at 150 ° C. or higher on the surface where the electronic component is thinned. The present invention relates to an electronic component support member that can be used in an electronic component heat treatment step for applying the support member and a support member peeling step for peeling the support member from the electronic component.

  With the multi-functionalization of electronic devices such as smartphones and tablet PCs, stacked MCPs (Multi Chip Packages) with multi-layered semiconductor elements and increased capacity have become widespread. Advantageous film adhesives are widely used as adhesives for die bonding. However, in spite of such a trend toward multi-functionality, the current connection method of semiconductor elements using wire bonds tends to slow down the operation of electronic devices due to the limited data processing speed. It is in. In addition, since there is a growing need to keep power consumption low and to use the battery for a longer time without charging, power saving is also being demanded. From such a viewpoint, in recent years, electronic device apparatuses having a new structure in which semiconductor elements are connected not by wire bonding but by through electrodes have been developed for the purpose of further speeding up and power saving.

  Although electronic device devices having a new structure have been developed as described above, there is still a demand for higher capacity, and a technology capable of stacking semiconductor elements in more stages is being developed regardless of the package structure. However, in order to stack a large number of semiconductor elements in a limited space, it is desired to stably reduce the thickness of the semiconductor elements. For this reason, it has been necessary to reduce the thickness of electronic parts, which has conventionally been about 350 μm, to a thickness of 50 to 100 μm or less. At the time of back surface grinding, a surface protection sheet is stuck on the circuit surface to protect the circuit surface and fix the electronic components, and back surface grinding is performed. Thereafter, a semiconductor device is manufactured through various processes such as dicing, pick-up, die bonding, and resin sealing through processing steps such as circuit formation and sealing on the ground surface.

  There are an increasing number of semiconductor device manufacturing processes such as circuit formation and sealing on the ground surface after back surface grinding of electronic parts, circuit surface protection and fixing of electronic components, back surface grinding, processing processes Electronic component support members that can withstand heat treatment processes have become indispensable.

  For example, at present, in a grinding process for thinning a semiconductor element, it is a mainstream to attach a support tape called a so-called BG tape to the semiconductor element and perform grinding in a supported state. However, the conventional BG tape cannot withstand the heat treatment process in the processing process, and there is a problem that peeling or the like occurs, and the ground electronic component is damaged. It has become known that it cannot be used.

  Against this background, it is essential to develop an electronic component support member that can withstand heat compared to conventional BG tapes.

Japanese Patent No. 4841802 Japanese Patent No. 5008999

  In recent years, for the purpose of increasing the capacity of electronic equipment, electronic components such as semiconductor elements have been reduced in thickness, and semiconductor manufacturing methods are changing. For example, electronic parts to be processed are not limited to those having high smoothness, and there is an increasing tendency to process wafers with surface irregularities exceeding 80 μm equipped with solder balls on the circuit surface. It is relatively difficult to peel the pressure-sensitive adhesive from such a large uneven surface, and when the adhesive strength of the solder ball is insufficient, there is a concern that the solder ball is missing when the pressure-sensitive adhesive is peeled off. . In addition, since semiconductor manufacturing methods that have undergone a processing step such as a heat treatment step after grinding the back surface of the electronic component have been applied, the electronic component can cope with the thinning of the electronic component and can withstand the heat treatment step. Support members are becoming essential.

  Conventional support tapes, such as BG tapes, have surface irregularities that tend to generate gaps between the surface irregularities and the BG tape. It is difficult to hold, and there is a concern that the electronic component will be damaged.

  In addition, there is a concern that in the heat treatment process after grinding of the electronic component, a gap is generated between the surface irregularities and the BG tape, so that the gap is caused and peeling occurs due to heating, and the ground electronic component is damaged. Arise.

  Moreover, when the conventional support tape is peeled from the electronic component after a processing step such as a heat treatment step, adhesive residue of the support tape is likely to be generated on the electronic component.

  The present invention has been made in view of the above circumstances, and an electronic component fixing step for fixing an electronic component with surface irregularities without a gap, an electronic component thinning step for thinning the electronic component, and an electronic component thinning It is an object of the present invention to provide an electronic component support member that can be used in an electronic component heat treatment process in which a process involving heating at 150 ° C. or higher is applied to the surface and a support member peeling process in which the support member is peeled from the electronic component.

An electronic component support member that can fix an electronic component without a gap and that can be easily peeled off from the electronic component after processing the electronic component. (A) Resin film substrate and (A) One surface side of the resin film substrate (B) a resin layer, and an electronic component support member,
(B) The resin layer has (C) a release layer having a surface opposite to the (A) resin film base of the (B) resin layer as a main surface, (C) the release layer, and (A) the resin (D) a high elastic modulus layer provided between the film substrate and
(C) the release layer is (C1) a thermoplastic resin, (C2) a thermoplastic resin composition containing a silicone-modified resin, (D) the high modulus layer is (D1) a thermoplastic resin, and (D2) An electronic component support member comprising: a curable component; and (D3) a curable resin composition containing a curing accelerator,
The wafer processing method performs an electronic component fixing step of fixing the support member to the electronic component, an electronic component thinning step of thinning the electronic component, and a process involving heating at 150 ° C. or more on the thinned surface of the electronic component. An electronic component heat treatment step, and a support member peeling step for peeling the support member from the electronic component,
The silicon mirror of the resin layer after the heat treatment when the heat treatment is performed in order of heating at 130 ° C. for 30 minutes and at 170 ° C. for 60 minutes in a state of being attached to the silicon mirror wafer. The present invention relates to an electronic component supporting member characterized in that a 90 ° peel strength with respect to a wafer is 300 N / m or less when measured at a rate of 300 mm / min at 25 ° C., and there is no residue on the wafer after peeling.

  In the present invention, the (D) high elastic modulus layer is subjected to heat treatment when the (D) high elastic modulus layer and the (C) release layer are heat-treated according to the heating conditions. The (D) high elastic modulus layer is preferably a layer whose storage elastic modulus at 25 ° C. is higher than the storage elastic modulus at 25 ° C. of the (C) release layer after the heat treatment.

  In the present invention, (C) the shear viscosity at 120 ° C. of the release layer is 20000 Pa · s or less, and (D) the shear viscosity at 120 ° C. of the high modulus layer is 200 to 30000 Pa · s. preferable.

  In the present invention, it is preferable that the (C1) thermoplastic resin has a high molecular weight component having a weight average molecular weight of 100000 to 1200000 and a glass transition temperature of −50 ° C. to 50 ° C. and having a crosslinkable functional group. .

  In the present invention, (D1) the thermoplastic resin preferably has a high molecular weight component having a weight average molecular weight of 100000 to 1200000 and a glass transition temperature of −50 ° C. to 50 ° C. and having a crosslinkable functional group. .

  In the present invention, the (A) resin film substrate preferably has a storage elastic modulus at 25 ° C. of 1000 MPa or more.

  In the present invention, the 1% mass reduction temperature after the heating of the (B) resin layer is preferably 150 ° C. or higher.

In the present invention, it is preferable that the (C) release layer further contains (C3) a curing accelerator.

According to the present invention, an electronic component such as a silicon wafer can be sufficiently fixed without a gap regardless of the surface unevenness state of the electronic component, and the electronic component can be ground and thinned. Processing such as processing can be performed, and the electronic component support member can be easily peeled from the processed electronic component.

FIG. 1 (A) is a top view showing an embodiment of a (B) resin layer (single layer) sheet according to the present invention, and FIG. 1 (B) is taken along line II in FIG. 1 (A). It is the schematic cross section along. FIG. 2A is a top view showing an embodiment of the (B) resin layer (laminated) sheet according to the present invention, and FIG. 2B is taken along line I-I in FIG. FIG. FIG. 3A is a top view showing one embodiment of the electronic component supporting member sheet according to the present invention, and FIG. 3B is a schematic cross-sectional view taken along the line II of FIG. It is. FIG. 4 is a top view illustrating another embodiment of the electronic component supporting member sheet according to the present invention, and FIG. 4B is a schematic cross-sectional view taken along the line II-II in FIG. . 5 (A) and 5 (B) are schematic cross-sectional views for explaining an embodiment of a method for processing an electronic component. FIG. 5 (D) shows an electronic component after processing, for example, after grinding. FIG. FIG. 6 is a schematic cross-sectional view for explaining an embodiment of a separation step for separating the processed electronic component from the electronic component support member. FIG. 7 is a schematic cross-sectional view for explaining an embodiment of a method for manufacturing an electronic device.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the drawings. In the drawings, the same or corresponding parts are denoted by the same reference numerals, and redundant description is omitted. Further, the dimensional ratios in the drawings are not limited to the illustrated ratios. However, the present invention is not limited to the following embodiments.

[Resin film substrate]
The (A) resin film substrate according to the present embodiment is not particularly limited. For example, a polyester film, a polypropylene film (such as an OPP film), a polyethylene terephthalate film, a polyimide film, a polyetherimide film, a polyether naphthalate film, Examples include methylpentene film.

  (A) It is preferable that the storage elastic modulus in 25 degreeC of a resin film base material is 1000 Mpa or more. If it is less than 1000 MPa, the resin film base material is likely to be deformed by heat in the processing step, and the electronic component cannot be sufficiently fixed.

  A storage elastic modulus means the measured value at the time of measuring, using a dynamic viscoelasticity measuring apparatus (made by UBM Co., Ltd.) while raising the temperature at a rate of temperature rise of 3 ° C./min.

(A) The thickness of a resin film base material can be 12.5-200 micrometers. In order to remarkably enhance the supportability of supporting the thinned electronic component without breaking, the thickness of the resin film substrate may be 17.5 to 150 μm, or 20 to 100 μm.

[Resin layer composition]
The (B) resin layer of the electronic component supporting member according to the present embodiment is (B) a resin layer including (C) a release layer and (D) a high elastic modulus layer, and (C) the release layer. (C1) a thermoplastic resin, (C2) a thermoplastic resin composition containing a silicone-modified resin, (D) a high elastic modulus layer (D1) a thermoplastic resin, (D2) a curable component, D3) An electronic component supporting member provided with (B) a resin layer, which is a curable resin composition containing a curing accelerator.

  The (C1) thermoplastic resin used in the present embodiment is not particularly limited as long as it is a resin having thermoplasticity or a resin that has thermoplasticity at least in an uncured state and forms a crosslinked structure after heating.

  As the (C1) thermoplastic resin used in the present embodiment, a polymer having a crosslinkable functional group can be used. Examples of the polymer include polyimide resin, (meth) acrylic copolymer, urethane resin polyphenylene ether resin, polyetherimide resin, phenoxy resin, and modified polyphenylene ether resin. Among these, a (meth) acrylic copolymer having a crosslinkable functional group is preferable. In the present specification, (meth) acryl is used to mean either acrylic or methacrylic. The above resins may be used alone or in combination of two or more.

  As the above-mentioned (meth) acrylic copolymer having a crosslinkable functional group, one obtained by a polymerization method such as pearl polymerization or solution polymerization may be used, or a commercially available product may be used.

  The polymer may have a crosslinkable functional group in the polymer chain or at the end of the polymer chain. Specific examples of the crosslinkable functional group include an epoxy group, an alcoholic hydroxyl group, a phenolic hydroxyl group, and a carboxyl group. One of the above crosslinkable functional groups may be used alone, or two or more thereof may be used in combination.

  The glass transition temperature (hereinafter referred to as “Tg”) of the thermoplastic resin is preferably −50 ° C. to 50 ° C., and more preferably −30 ° C. to 20 ° C. When Tg is in such a range, it is possible to obtain sufficient fluidity while suppressing deterioration of handleability due to excessive increase in tack force after being formed into a sheet, and further, the elastic modulus after curing is increased. It can be made low and it can suppress that peeling strength becomes high too much.

  The glass transition temperature is measured using a DSC (thermal differential scanning calorimeter) (for example, “Thermo Plus 2” manufactured by Rigaku Corporation).

  Although the weight average molecular weight of a thermoplastic resin is not specifically limited, Preferably it is 100,000-1.2 million, More preferably, it is 200,000-1 million. When the weight average molecular weight of the thermoplastic resin is within such a range, it becomes easy to ensure film formability and fluidity.

  The weight average molecular weight is a polystyrene conversion value using a standard polystyrene calibration curve by gel permeation chromatography (GPC).

  The (C2) silicone-modified resin used in the present embodiment is not particularly limited as long as it is a resin modified with silicone.

  As the silicone compound, a silicone-modified alkyd resin is preferable.

  When the film-like pressure-sensitive adhesive contains a silicone-modified alkyd resin, the film-like pressure-sensitive adhesive can be easily peeled off without using a solvent when peeling from the electronic component.

  As a method for obtaining a silicone-modified alkyd resin, for example, (i) a normal synthesis reaction for obtaining an alkyd resin, that is, when reacting a polyhydric alcohol with a fatty acid, a polybasic acid, etc., the organopolysiloxane is simultaneously reacted as an alcohol component. And (ii) a method of reacting a general alkyd resin synthesized in advance with an organopolysiloxane.

  Examples of the polyhydric alcohol used as a raw material for the alkyd resin include dihydric alcohols such as ethylene glycol, diethylene glycol, triethylene glycol, propylene glycol, trimethylene glycol, tetramethylene glycol, and neopentyl glycol, glycerin, trimethylolethane, Examples thereof include trihydric alcohols such as trimethylolpropane, and tetrahydric or higher polyhydric alcohols such as diglycerin, triglycerin, pentaerythritol, dipentaerythritol, mannitol, and sorbit. These may be used individually by 1 type and may be used in combination of 2 or more type.

  Examples of the polybasic acid used as a raw material for the alkyd resin include aromatic polybasic acids such as phthalic anhydride, terephthalic acid, isophthalic acid, and trimetic anhydride, and aliphatic saturated polybasic acids such as succinic acid, adipic acid, and sebacic acid. Aliphatic unsaturated polybasic acids such as basic acid, maleic acid, maleic anhydride, fumaric acid, itaconic acid, citraconic anhydride, cyclopentadiene-maleic anhydride adduct, terpene-maleic anhydride adduct, rosin-maleic anhydride Examples thereof include polybasic acids by Diels-Alder reaction such as acid adducts. These may be used individually by 1 type and may be used in combination of 2 or more type.

  The alkyd resin may further contain a modifier or a crosslinking agent.

  Examples of the modifier include octylic acid, lauric acid, palmitic acid, stearic acid, oleic acid, linoleic acid, linolenic acid, eleostearic acid, ricinoleic acid, dehydrated ricinoleic acid, or coconut oil, linseed oil, kiri oil, castor Oil, dehydrated castor oil, soybean oil, safflower oil, and these fatty acids can be used. These may be used individually by 1 type and may be used in combination of 2 or more type.

  Examples of the crosslinking agent include amino resins such as melamine resins and urea resins, urethane resins, epoxy resins, and phenol resins. Among these, when an amino resin is used, an amino alkyd resin crosslinked with an amino resin is preferably obtained. A crosslinking agent may be used individually by 1 type, and may be used in combination of 2 or more type.

  In the silicone-modified alkyd resin, an acidic catalyst can be used as a curing catalyst. There is no restriction | limiting in particular as an acidic catalyst, It can select suitably from well-known acidic catalysts as a crosslinking reaction catalyst of an alkyd resin, and can use it. As such an acidic catalyst, for example, an organic acidic catalyst such as p-toluenesulfonic acid and methanesulfonic acid is suitable. An acidic catalyst may be used individually by 1 type, and may be used in combination of 2 or more type.

  Examples of the silicone-modified alkyd resin as described above include Tesfine TA31-209E (trade name, manufactured by Hitachi Chemical Co., Ltd.).

  In the present embodiment, it is preferable to use a combination of a silicone-modified alkyd resin and a polyether-modified silicone, an alkyl-modified silicone, an epoxy-modified silicone and the like from the viewpoint of easy peeling.

  Examples of the silicone as described above include SH3773M, L-7001, SH-550, SH-710 manufactured by Toray Dow Corning Co., Ltd., X-22-163, KF-105, and X-22 manufactured by Shin-Etsu Silicone Co., Ltd. 163B, X-22-163C, etc. are mentioned, but there is no particular limitation as long as it is compatible with the high molecular weight substance.

  The blending amount of the (C2) silicone-modified resin in the (C) release layer composition according to this embodiment is preferably 1 to 100 parts by mass, and 2 to 80 parts by mass with respect to 100 parts by mass of the (C1) thermoplastic resin. Part is more preferred. (C2) When the blending amount of the silicone-modified resin is within the above range, it is possible to achieve both adhesiveness at the time of electronic component processing and peelability after processing. When the blending amount is less than 1 part by mass, the peelability is deteriorated, and when it is more than 100 parts by mass, the heat resistance is deteriorated.

  The (D1) thermoplastic resin used in the present embodiment is not particularly limited as long as it is a resin having thermoplasticity or a resin that has thermoplasticity at least in an uncured state and forms a crosslinked structure after heating.

  As the (D1) thermoplastic resin used in this embodiment, a polymer having a crosslinkable functional group can be used. Examples of the polymer include polyimide resin, (meth) acrylic copolymer, urethane resin polyphenylene ether resin, polyetherimide resin, phenoxy resin, and modified polyphenylene ether resin. Among these, a (meth) acrylic copolymer having a crosslinkable functional group is preferable. In the present specification, (meth) acryl is used to mean either acrylic or methacrylic. The above resins may be used alone or in combination of two or more.

  As the above-mentioned (meth) acrylic copolymer having a crosslinkable functional group, one obtained by a polymerization method such as pearl polymerization or solution polymerization may be used, or a commercially available product may be used.

  The polymer may have a crosslinkable functional group in the polymer chain or at the end of the polymer chain. Specific examples of the crosslinkable functional group include an epoxy group, an alcoholic hydroxyl group, a phenolic hydroxyl group, and a carboxyl group. One of the above crosslinkable functional groups may be used alone, or two or more thereof may be used in combination.

  The glass transition temperature (hereinafter referred to as “Tg”) of the thermoplastic resin is preferably −50 ° C. to 50 ° C., and more preferably −30 ° C. to 20 ° C. When Tg is in such a range, it is possible to obtain sufficient fluidity while suppressing deterioration of handleability due to excessive increase in tack force after being formed into a sheet, and further, the elastic modulus after curing is increased. It can be made low and it can suppress that peeling strength becomes high too much.

  The glass transition temperature is measured using a DSC (thermal differential scanning calorimeter) (for example, “Thermo Plus 2” manufactured by Rigaku Corporation).

  Although the weight average molecular weight of a thermoplastic resin is not specifically limited, Preferably it is 100,000-1.2 million, More preferably, it is 200,000-1 million. When the weight average molecular weight of the thermoplastic resin is within such a range, it becomes easy to ensure film formability and fluidity.

The weight average molecular weight is a polystyrene conversion value using a standard polystyrene calibration curve by gel permeation chromatography (GPC).

  Although there is no restriction | limiting in particular as (D2) curable component used by this embodiment, A thermosetting resin is preferable.

  Examples of the thermosetting resin include an epoxy resin, an acrylic resin, a silicone resin, a phenol resin, a thermosetting polyimide resin, a polyurethane resin, a melamine resin, and a urea resin. These may be used alone or in combination of two or more. Can also be used. In particular, it is preferable to use an epoxy resin in that (D) a high elastic modulus layer composition excellent in heat resistance, workability and reliability can be obtained. When using an epoxy resin as the thermosetting resin, it is preferable to use an epoxy resin curing agent together.

  The epoxy resin is not particularly limited as long as it is cured and has a heat resistance. Bifunctional epoxy resins such as bisphenol A type epoxy, novolac type epoxy resins such as phenol novolac type epoxy resin and cresol novolac type epoxy resin, and the like can be used. Moreover, what is generally known, such as a polyfunctional epoxy resin, a glycidyl amine type epoxy resin, a heterocyclic ring-containing epoxy resin, or an alicyclic epoxy resin, can be applied.

  Examples of the bisphenol A type epoxy resin include Epicoat Series (Epicoat 807, Epicoat 815, Epicoat 825, Epicoat 827, Epicoat 828, Epicoat 834, Epicoat 1001, Epicoat 1004, Epicoat 1007, Epicoat 1009, ("Epicoat 1009"). "Is a registered trademark)), manufactured by Dow Chemical Company, DER-330, DER-301, DER-361, and Nippon Steel & Sumikin Chemical Co., Ltd., YD8125, YDF8170, and the like. Examples of the phenol novolac type epoxy resin include Epicoat 152 and Epicoat 154 manufactured by Japan Epoxy Resin Co., Ltd., EPPN-201 manufactured by Nippon Kayaku Co., Ltd., DEN-438 manufactured by Dow Chemical Company, and the like. Examples of the o-cresol novolac type epoxy resin include EOCN-102S, EOCN-103S, EOCN-104S, EOCN-1012, EOCN-1025, and EOCN-1027 manufactured by Nippon Kayaku Co., Ltd., YDCN701, manufactured by Nippon Steel & Sumikin Chemical Co., Ltd. , YDCN702, YDCN703, and YDCN704. As the polyfunctional epoxy resin, Epon 1031S manufactured by Japan Epoxy Resin Co., Ltd., Araldite 0163 manufactured by Ciba Specialty Chemicals Co., Ltd., Denacol EX-611, EX-614, EX-614B, EX-622 manufactured by Nagase ChemteX Corporation. , EX-512, EX-521, EX-421, EX-411, EX-321 and the like ("Araldite" and "Denacol" are registered trademarks). As an amine type epoxy resin, Epicoat 604 manufactured by Japan Epoxy Resin Co., Ltd., YH-434 manufactured by Toto Kasei Co., Ltd., TETRAD-X and TETRAD-C manufactured by Mitsubishi Gas Chemical Co., Ltd., ELM- manufactured by Sumitomo Chemical Co., Ltd. 120 etc. are mentioned. Examples of the heterocyclic ring-containing epoxy resin include Araldite PT810 manufactured by Ciba Specialty Chemicals, ERL4234, ERL4299, ERL4221, and ERL4206 manufactured by UCC. These epoxy resins can be used alone or in combination of two or more.

  When using an epoxy resin, it is preferable to use an epoxy resin curing agent.

  As the epoxy resin curing agent, known curing agents that are usually used can be used. For example, amines, polyamides, acid anhydrides, polysulfides, boron trifluoride, bisphenol A, bisphenol F, and bisphenol S can be used. Examples thereof include bisphenols having two or more such phenolic hydroxyl groups in one molecule, phenol resins such as phenol novolac resins, bisphenol A novolac resins, and cresol novolac resins. Phenol resins such as phenol novolac resin, bisphenol A novolac resin, and cresol novolac resin are particularly preferable in terms of excellent electric corrosion resistance during moisture absorption.

  Preferable examples of the phenol resin curing agent include, for example, trade names: Phenolite LF2882, Phenolite LF2822, Phenolite TD-2090, Phenolite TD-2149, Phenolite VH-4150, Phenolite. Light VH4170, manufactured by Meiwa Kasei Co., Ltd., trade name: H-1, manufactured by Japan Epoxy Resin Co., Ltd., trade name: EpiCure MP402FPY, EpiCure YL6065, EpiCure YLH129B65, and Mitsui Chemicals, trade name: Mirex XL, Mirex XLC, Millex RN, Millex RS, and Millex VR are listed ("Phenolite", "Epicure", and "Millex" are registered trademarks).

The blending amount of the (D2) curable component in the (D) high elastic modulus layer composition according to this embodiment is preferably 1 to 500 parts by mass, and 5 to 300 parts per 100 parts by mass of the (D1) thermoplastic resin. Part by mass is more preferable. When the blending amount of the curable component is within the above range, sufficient low-temperature sticking property, heat resistance and curability can be compatible. When the blending amount is less than 1 part by mass, the heat resistance is deteriorated, and when the blending amount is more than 500 parts by mass, the viscosity is low before curing. It becomes easy to enter the surface irregularities of the part, and since it has a high elastic modulus after curing, it cannot be peeled off due to the anchor effect at the time of peeling.

  Examples of the (D3) curing accelerator used in the present embodiment include imidazoles, dicyandiamide derivatives, dicarboxylic acid dihydrazide, triphenylphosphine, tetraphenylphosphonium tetraphenylborate, 2-ethyl-4-methylimidazole-tetraphenylborate, 1,8-diazabicyclo [5,4,0] undecene-7-tetraphenylborate and the like. These can be used alone or in combination of two or more.

  When (D) high elastic modulus layer composition which concerns on this embodiment contains the (meth) acryl copolymer which has an epoxy group, the hardening accelerator which accelerates | stimulates hardening of the epoxy group contained in the acrylic copolymer which concerns It is preferable to contain.

If the amount of curing accelerator added is too small, it will be difficult to completely cure the film adhesive due to the heat history in the manufacturing process of the semiconductor element, and it may not be possible to securely fix the electronic component and the support. There is. On the other hand, when the addition amount of the curing accelerator is too large, not only does the melt viscosity of the film-like pressure-sensitive adhesive easily increase due to heating during the production process, but the storage stability of the film tends to deteriorate. From such a viewpoint, the blending amount of the (D3) curing accelerator in the film-like pressure-sensitive adhesive according to this embodiment is preferably 0.01 to 2.0 parts by mass with respect to (D1) 100 parts by mass of the thermoplastic resin. .

The (B) resin layer of the electronic component supporting member according to the present embodiment includes (C) a release resin layer containing (C1) a thermoplastic resin, (C2) a thermoplastic resin composition containing a silicone-modified resin, and (D) The high elastic modulus layer is an electronic component supporting member film comprising (D1) a thermoplastic resin, (D2) a curable component, and (D3) a curable resin composition containing a curing accelerator. If necessary, (C) the release layer can contain (C3) a curing accelerator and other components, and (D) the high modulus layer can contain other components as needed. it can.

  Examples of the (C3) curing accelerator used in the present embodiment include imidazoles, dicyandiamide derivatives, dicarboxylic acid dihydrazide, triphenylphosphine, tetraphenylphosphonium tetraphenylborate, 2-ethyl-4-methylimidazole-tetraphenylborate, 1,8-diazabicyclo [5,4,0] undecene-7-tetraphenylborate and the like. These can be used alone or in combination of two or more.

  When the (C) release layer composition according to this embodiment contains a (meth) acrylic copolymer having an epoxy group, it contains a curing accelerator that accelerates the curing of the epoxy group contained in the acrylic copolymer. It is preferable to do.

If the amount of curing accelerator added is too small, it will be difficult to completely cure the film adhesive due to the heat history in the manufacturing process of the semiconductor element, and it may not be possible to securely fix the electronic component and the support. There is. On the other hand, when the addition amount of the curing accelerator is too large, not only does the melt viscosity of the film-like pressure-sensitive adhesive easily increase due to heating during the production process, but the storage stability of the film tends to deteriorate. From such a viewpoint, the blending amount of the (C3) curing accelerator in the film-like pressure-sensitive adhesive according to this embodiment is preferably 0.01 to 2.0 parts by mass with respect to 100 parts by mass of the (C1) thermoplastic resin. .

  (C) As another component of a release layer composition, an inorganic filler and a silane coupling agent are mentioned.

  Examples of the inorganic filler include metal fillers such as silver powder, gold powder, and copper powder; non-metallic inorganic fillers such as silica, alumina, boron nitride, titania, glass, iron oxide, and ceramic. The inorganic filler can be selected according to the desired function. For example, the metal filler can be added for the purpose of imparting thixotropy to the (C) release layer composition, and the nonmetallic inorganic filler can be added to the (C) release layer composition with low thermal expansion and low hygroscopicity. Can be added for the purpose of imparting. An inorganic filler can be used individually by 1 type or in combination of 2 or more types.

  The inorganic filler preferably has an organic group on the surface. Since the surface of the inorganic filler is modified with an organic group, (C) dispersibility in an organic solvent when preparing a release layer composition, and (C) an electronic component formed from the release layer composition It becomes easy to improve the adhesiveness and heat resistance of the support member film.

  The inorganic filler having an organic group on the surface can be obtained, for example, by mixing a silane coupling agent represented by the following general formula (B-1) and an inorganic filler and stirring at a temperature of 30 ° C. or higher. . The modification of the surface of the inorganic filler with an organic group can be confirmed by UV (ultraviolet) measurement, IR (infrared) measurement, XPS (X-ray photoelectron spectroscopy) measurement, or the like.

In formula (B-1), X represents an organic group selected from the group consisting of a phenyl group, a glycidoxy group, an acryloyl group, a methacryloyl group, a mercapto group, an amino group, a vinyl group, an isocyanate group, and a methacryloxy group, and s Represents an integer of 0 or 1 to 10, and R ¹¹ , R ¹² and R ¹³ each independently represents an alkyl group having 1 to 10 carbon atoms. Examples of the alkyl group having 1 to 10 carbon atoms include methyl group, ethyl group, propyl group, butyl group, pentyl group, hexyl group, heptyl group, octyl group, nonyl group, decyl group, isopropyl group and isobutyl group. It is done. A methyl group, an ethyl group, and a pentyl group are preferable because they are easily available. X is preferably an amino group, a glycidoxy group, a mercapto group, or an isocyanate group, and more preferably a glycidoxy group or a mercapto group, from the viewpoint of heat resistance. S in formula (B-1) is preferably 0 to 5, and more preferably 0 to 4 from the viewpoint of suppressing film fluidity during high heat and improving heat resistance.

  Preferred silane coupling agents include, for example, trimethoxyphenylsilane, dimethyldimethoxyphenylsilane, triethoxyphenylsilane, dimethoxymethylphenylsilane, vinyltrimethoxysilane, vinyltriethoxysilane, vinyltris (2-methoxyethoxy) silane, N -(2-aminoethyl) -3-aminopropylmethyldimethoxysilane, N- (2-aminoethyl) -3-aminopropyltrimethoxysilane, 3-aminopropyltriethoxysilane, 3-aminopropyltrimethoxysilane, 3 -Glycidoxypropyltrimethoxysilane, 3-glycidoxypropylmethyldimethoxysilane, 2- (3,4-epoxycyclohexyl) ethyltrimethoxysilane, 3-isocyanatopropyltriethoxy Lan, 3-methacryloxypropyltrimethoxysilane, 3-mercaptopropyltrimethoxysilane, 3-ureidopropyltriethoxysilane, N- (1,3-dimethylbutylidene) -3- (triethoxysilyl) -1-propane Examples include amine, N, N′-bis (3- (trimethoxysilyl) propyl) ethylenediamine, polyoxyethylenepropyltrialkoxysilane, and polyethoxydimethylsiloxane. Among these, 3-aminopropyltriethoxysilane, 3-glycidoxypropyltrimethoxysilane, 3-isocyanatopropyltriethoxysilane, and 3-mercaptopropyltrimethoxysilane are preferable, and trimethoxyphenylsilane, 3-glycidoxy Propyltrimethoxysilane and 3-mercaptopropyltrimethoxysilane are more preferable. A silane coupling agent can be used individually by 1 type or in combination of 2 or more types.

  The amount of the coupling agent used is preferably 0.01 to 50 parts by weight, and 0.05 parts by weight with respect to 100 parts by weight of the inorganic filler, from the viewpoint of balancing the effect of improving heat resistance and storage stability. Part-20 mass parts is more preferable, and 0.5-10 mass parts is still more preferable from a viewpoint of heat resistance improvement.

  The blending amount of the inorganic filler in the (C) release layer composition according to this embodiment is (C1) thermoplastic from the viewpoint of improving the handling property of the electronic component supporting member film in the B-stage state and improving the low thermal expansion. 300 mass parts or less are preferable with respect to 100 mass parts of resin, 200 mass parts or less are more preferable, and 100 mass parts or less are still more preferable. Although there is no restriction | limiting in particular in content of an inorganic filler, It is preferable that it is 5 mass parts or more with respect to 100 mass parts of thermoplastic resins. By making content of an inorganic filler into the said range, a desired function can be provided, ensuring sufficient adhesiveness of the electronic component support member film formed from (C) mold release layer composition.

  An organic filler can further be mix | blended with the (C) mold release layer composition which concerns on this embodiment. Examples of the organic filler include carbon, rubber filler, silicone fine particles, polyamide fine particles, and polyimide fine particles. The blending amount of the organic filler is preferably 300 parts by mass or less, more preferably 200 parts by mass or less, and still more preferably 100 parts by mass or less, relative to 100 parts by mass of the (C1) thermoplastic resin. Although there is no restriction | limiting in particular in content of an inorganic filler, It is preferable that it is 5 mass parts or more with respect to 100 mass parts of thermoplastic resins.

  The release layer composition (C) according to this embodiment may be further diluted with an organic solvent as necessary. The organic solvent is not particularly limited, but can be determined in consideration of the volatility during film formation from the boiling point. Specifically, for example, a solvent having a relatively low boiling point such as methanol, ethanol, 2-methoxyethanol, 2-ethoxyethanol, 2-butoxyethanol, methyl ethyl ketone, acetone, methyl isobutyl ketone, toluene, and xylene is a film during film formation. This is preferable in that the curing of the resin does not proceed. For the purpose of improving the film forming property, it is preferable to use a solvent having a relatively high boiling point such as dimethylacetamide, dimethylformamide, N-methylpyrrolidone, and cyclohexanone. These solvents can be used alone or in combination of two or more.

Moreover, the (C) mold release layer composition which concerns on this embodiment can contain curable components, such as an epoxy resin, a phenol resin, and a bismaleimide resin.

  (D) Examples of other components of the high elastic modulus layer composition include inorganic fillers and silane coupling agents.

  Examples of the inorganic filler include metal fillers such as silver powder, gold powder, and copper powder; non-metallic inorganic fillers such as silica, alumina, boron nitride, titania, glass, iron oxide, and ceramic. The inorganic filler can be selected according to the desired function. For example, the metal filler can be added for the purpose of imparting thixotropy to the (D) high elastic modulus layer composition, and the nonmetallic inorganic filler can be added to the (D) high elastic modulus layer composition. It can be added for the purpose of imparting low hygroscopicity. An inorganic filler can be used individually by 1 type or in combination of 2 or more types.

  The inorganic filler preferably has an organic group on the surface. The surface of the inorganic filler is modified with an organic group, so that (D) dispersibility in an organic solvent when preparing a high elastic modulus layer composition, and (D) formed from the high elastic modulus layer composition It becomes easy to improve the heat resistance of the electronic component supporting member.

  The inorganic filler having an organic group on the surface can be obtained, for example, by mixing a silane coupling agent represented by the following general formula (B-1) and an inorganic filler and stirring at a temperature of 30 ° C. or higher. . The modification of the surface of the inorganic filler with an organic group can be confirmed by UV (ultraviolet) measurement, IR (infrared) measurement, XPS (X-ray photoelectron spectroscopy) measurement, or the like.

In formula (B-1), X represents an organic group selected from the group consisting of a phenyl group, a glycidoxy group, an acryloyl group, a methacryloyl group, a mercapto group, an amino group, a vinyl group, an isocyanate group, and a methacryloxy group, and s Represents an integer of 0 or 1 to 10, and R ¹¹ , R ¹² and R ¹³ each independently represents an alkyl group having 1 to 10 carbon atoms. Examples of the alkyl group having 1 to 10 carbon atoms include methyl group, ethyl group, propyl group, butyl group, pentyl group, hexyl group, heptyl group, octyl group, nonyl group, decyl group, isopropyl group and isobutyl group. It is done. A methyl group, an ethyl group, and a pentyl group are preferable because they are easily available. X is preferably an amino group, a glycidoxy group, a mercapto group, or an isocyanate group, and more preferably a glycidoxy group or a mercapto group, from the viewpoint of heat resistance. S in formula (B-1) is preferably 0 to 5, and more preferably 0 to 4 from the viewpoint of suppressing film fluidity during high heat and improving heat resistance.

  Preferred silane coupling agents include, for example, trimethoxyphenylsilane, dimethyldimethoxyphenylsilane, triethoxyphenylsilane, dimethoxymethylphenylsilane, vinyltrimethoxysilane, vinyltriethoxysilane, vinyltris (2-methoxyethoxy) silane, N -(2-aminoethyl) -3-aminopropylmethyldimethoxysilane, N- (2-aminoethyl) -3-aminopropyltrimethoxysilane, 3-aminopropyltriethoxysilane, 3-aminopropyltrimethoxysilane, 3 -Glycidoxypropyltrimethoxysilane, 3-glycidoxypropylmethyldimethoxysilane, 2- (3,4-epoxycyclohexyl) ethyltrimethoxysilane, 3-isocyanatopropyltriethoxy Lan, 3-methacryloxypropyltrimethoxysilane, 3-mercaptopropyltrimethoxysilane, 3-ureidopropyltriethoxysilane, N- (1,3-dimethylbutylidene) -3- (triethoxysilyl) -1-propane Examples include amine, N, N′-bis (3- (trimethoxysilyl) propyl) ethylenediamine, polyoxyethylenepropyltrialkoxysilane, and polyethoxydimethylsiloxane. Among these, 3-aminopropyltriethoxysilane, 3-glycidoxypropyltrimethoxysilane, 3-isocyanatopropyltriethoxysilane, and 3-mercaptopropyltrimethoxysilane are preferable, and trimethoxyphenylsilane, 3-glycidoxy Propyltrimethoxysilane and 3-mercaptopropyltrimethoxysilane are more preferable. A silane coupling agent can be used individually by 1 type or in combination of 2 or more types.

  The amount of the coupling agent used is preferably 0.01 to 50 parts by weight, and 0.05 parts by weight with respect to 100 parts by weight of the inorganic filler, from the viewpoint of balancing the effect of improving heat resistance and storage stability. Part-20 mass parts is more preferable, and 0.5-10 mass parts is still more preferable from a viewpoint of heat resistance improvement.

  The blending amount of the inorganic filler in the (D) high elastic modulus layer composition according to the present embodiment is the viewpoint of improving the handling property of the electronic component supporting member film in the B stage state, improving the low thermal expansion, and improving the elastic modulus. From (D1) 100 parts by mass of the thermoplastic resin, 300 parts by mass or less is preferable, 200 parts by mass or less is more preferable, and 100 parts by mass or less is even more preferable. Although there is no restriction | limiting in particular in content of an inorganic filler, It is preferable that it is 5 mass parts or more with respect to 100 mass parts of thermoplastic resins. By setting the content of the inorganic filler in the above range, the desired function is imparted while sufficiently securing the elastic modulus of the (D) high elastic modulus layer formed from the (D) high elastic modulus layer composition. be able to.

  An organic filler can further be mix | blended with (D) high elastic modulus layer composition which concerns on this embodiment. Examples of the organic filler include carbon, rubber filler, silicone fine particles, polyamide fine particles, and polyimide fine particles. The blending amount of the organic filler is preferably 300 parts by mass or less, more preferably 200 parts by mass or less, and still more preferably 100 parts by mass or less with respect to (D1) 100 parts by mass of the thermoplastic resin. Although there is no restriction | limiting in particular in content of an inorganic filler, It is preferable that it is 5 mass parts or more with respect to 100 mass parts of thermoplastic resins.

  The (D) high elastic modulus layer composition according to this embodiment may be further diluted with an organic solvent as necessary. The organic solvent is not particularly limited, but can be determined in consideration of the volatility during film formation from the boiling point. Specifically, for example, a solvent having a relatively low boiling point such as methanol, ethanol, 2-methoxyethanol, 2-ethoxyethanol, 2-butoxyethanol, methyl ethyl ketone, acetone, methyl isobutyl ketone, toluene, and xylene is a film during film formation. This is preferable in that the curing of the resin does not proceed. For the purpose of improving the film forming property, it is preferable to use a solvent having a relatively high boiling point such as dimethylacetamide, dimethylformamide, N-methylpyrrolidone, and cyclohexanone. These solvents can be used alone or in combination of two or more.

[Electronic component support member sheet]
The electronic component support member according to the present embodiment is formed by forming the (C) release layer composition and (D) the high elastic modulus layer composition according to the present embodiment in a film form on the (A) resin film substrate. It is made.

  The (C) release layer composition and (D) high modulus layer composition according to this embodiment are prepared by mixing and kneading the above-described components in an organic solvent, respectively, It can form by the method of apply | coating the produced varnish on a support film, and drying.

  The above mixing and kneading can be performed by using a normal stirrer, a raking machine, a three-roller, a ball mill, or other disperser and appropriately combining them. The above-mentioned heat drying is not particularly limited as long as the solvent used is sufficiently volatilized, but it can be usually performed by heating at 60 ° C. to 200 ° C. for 0.1 to 90 minutes.

  The organic solvent for producing the varnish is not particularly limited as long as it can uniformly dissolve, knead or disperse the above components, and a conventionally known one can be used. Examples of such solvents include ketone solvents such as acetone, methyl ethyl ketone, methyl isobutyl ketone, and cyclohexanone, dimethylformamide, dimethylacetamide, N methylpyrrolidone, toluene, xylene, and the like. It is preferable to use methyl ethyl ketone, cyclohexanone, etc. in terms of fast drying speed and low price. In that case, it is preferable that solid content concentration is 10-80 mass%.

  A protective film can be attached to the (C) release layer and the (D) high elastic modulus layer provided on the support film, if necessary. In this case, (C) a release layer sheet or (D) a high modulus layer having a three-layer structure comprising a support film, (C) a release layer or (D) a high modulus layer and a protective film, which will be described later. A sheet can be obtained.

The thus obtained (C) release layer sheet or (D) high modulus layer sheet can be easily stored by, for example, winding it into a roll. Moreover, a roll-shaped film can be cut out into a suitable size and stored in a sheet shape.

  FIG. 1A is a top view showing an embodiment of (B) a resin layer (single layer) sheet 20 of this embodiment, that is, (C) a release layer sheet 21 or (D) a high elastic modulus layer sheet 22. FIG. 1B is a schematic cross-sectional view taken along the line II in FIG.

  An electronic component support member film sheet 1 shown in FIG. 1 includes a support film 10, a (B) resin layer film 20 provided on the support film 10, and a (B) resin layer film 20 opposite to the support film 10. And a protective film 30 provided on the surface.

  The support film 10 is not particularly limited, and examples thereof include polyethylene terephthalate, polybutylene terephthalate, polyethylene naphthalate, polyethylene, polypropylene, polyamide, and polyimide. Among these, polyethylene terephthalate, polybutylene terephthalate, polyethylene naphthalate, polypropylene, polyamide, and polyimide are preferable from the viewpoints of flexibility and toughness. Moreover, it is preferable to use as a support film the film by which the mold release process was performed by the silicone type compound, the fluorine-type compound, etc. from a viewpoint of peelability improvement with (D) high elastic modulus layer sheet.

  The thickness of the support film 10 may be appropriately changed depending on the intended flexibility, but is preferably 3 to 350 μm. If it is 3 μm or more, the film strength is sufficient, and if it is 350 μm or less, sufficient flexibility is obtained. From such a viewpoint, the thickness of the support film 10 is more preferably 5 to 200 μm, and particularly preferably 7 to 150 μm.

  The thickness of the (B) resin layer 20 of the present embodiment is not particularly limited, but the thickness after drying (C) the release layer 21 is a semiconductor from the viewpoint of sufficiently embedding surface irregularities of a semiconductor element or the like. A thickness equal to or less than the unevenness of the surface of the element or the like is preferable, and is preferably 10 to 350 μm. (D) It is preferable that the high elastic modulus layer 22 is 10-350 micrometers from a viewpoint of fully fixing an electronic component and the support body for conveyance. (C) If the release layer 21 is 10 μm or more, the thickness is sufficient because the thickness of the film or the cured product of the film is sufficient, and the unevenness on the surface of a semiconductor element or the like can be sufficiently embedded, and 350 μm or less. If so, it becomes easy to reduce the amount of residual solvent in the film by sufficient drying, and foaming can be reduced when the cured product of the film is heated. If the thickness is 10 μm or less, thickness variation at the time of coating tends to occur, and if it is 350 μm or more, it tends to be crushed when laminated with the (D) high elastic modulus layer 22, and thickness variation tends to occur. (D) If the high elastic modulus layer 22 is 10 μm or more, the film or the cured product of the film has sufficient strength because the thickness is sufficient, and the electronic component can be sufficiently fixed in the electronic component processing step. If it is 350 μm or less, it becomes easy to reduce the amount of residual solvent in the film by sufficient drying, and foaming can be reduced when the cured product of the film is heated. If the thickness is 10 μm or less, the thickness accuracy at the time of coating tends to be non-uniform, and if it is 350 μm or more, the film tends to be crushed when laminated with the (C) release layer 21 and thickness variations are likely to occur.

When manufacturing a thick film, a plurality of previously formed films having a thickness of 100 μm or less may be bonded together. By using the films bonded in this manner, the residual solvent when the thick film is produced can be easily reduced.

  The (C) release layer 21 according to this embodiment preferably has a shear viscosity before curing of 20000 Pa · s or less at 120 ° C. When the shear viscosity at 120 ° C. is 20000 Pa · s or less, for example, electronic components without generating voids under the conditions of 70 to 150 ° C./0.02 to 0.2 MPa / 1 to 5 minutes / 5 to 15 mbar. It is possible to crimp to. Furthermore, when the shear viscosity at 120 ° C. is 20000 Pa · s or less, sufficient fluidity can be obtained and the generation of voids can be suppressed when vacuum-bonded to an electronic component under the above conditions.

  The (D) high elastic modulus layer 22 according to the present embodiment preferably has a shear viscosity before curing of 200 to 30000 Pa · s at 120 ° C. from the viewpoints of handling of the film and adhesion to a support. If it is smaller than 200 Pa · s, it is too soft, and the film is difficult to handle. If it is larger than 30000 Pa · s, it is too hard, and (C) the release layer 21 does not follow the surface irregularities when vacuum-bonded to an electronic component. Embeddability cannot be obtained.

  The above-mentioned shear viscosity is measured using ARES (manufactured by Rheometric Scientific) and measured while raising the temperature at a heating rate of 20 ° C./min while giving 5% strain to the film to be measured. means.

  Although there is no restriction | limiting in particular as the protective film 30, For example, a polyethylene terephthalate, a polybutylene terephthalate, a polyethylene naphthalate, polyethylene, a polypropylene etc. are mentioned. Among these, polyethylene terephthalate, polyethylene, and polypropylene are preferable from the viewpoints of flexibility and toughness. Moreover, it is preferable to use as a protective film the film by which the mold release process was given with the silicone type compound, the fluorine-type compound, etc. from a viewpoint of peelability improvement with (C) mold release layer.

The thickness of the protective film 30 can be appropriately set depending on the intended flexibility, but is preferably 10 to 350 μm. If it is 10 μm or more, the film strength is sufficient, and if it is 350 μm or less, sufficient flexibility is obtained. From such a viewpoint, the thickness of the protective film 30 is more preferably 15 to 200 μm, and particularly preferably 20 to 150 μm.

  The obtained (C) release layer sheet and (D) high elastic modulus layer sheet can be bonded to each other at 60 to 120 ° C. by roll lamination or the like, thereby forming a (B) resin layer sheet. Fig. 2 (A) is a top view showing an embodiment of the resin layer sheet of (B) of this embodiment, and Fig. 2 (B) is a schematic cross-sectional view taken along line II of Fig. 3 (A). It is.

  The (D) high elastic modulus layer side of the (B) resin layer sheet and the (A) resin film substrate are bonded together at 60 to 120 ° C. by roll lamination or the like, whereby an electronic component supporting member sheet can be obtained. FIG. 3A is a top view showing one embodiment of the electronic material indicating member sheet of the present embodiment, and FIG. 3B is a schematic cross-sectional view taken along the line II in FIG. 3A. is there.

  (A) A (D) high elastic modulus layer is directly applied to a resin film substrate, and then (D) a release layer sheet is roll-laminated at 60 to 120 ° C. on the high elastic modulus layer side. You may produce an electronic component support member sheet | seat by bonding. In addition, (A) the (D) high modulus layer is directly applied to the resin film substrate, and then (D) the release layer sheet is coated on the (D) high modulus layer side to support the electronic component. A member sheet may be produced. There is no restriction | limiting in particular in the preparation methods of an electronic component support member sheet | seat.

  FIG. 4A is a top view showing another embodiment of the electronic component supporting member sheet according to the present invention, and FIG. 4B is a schematic cross-sectional view taken along the line II-II in FIG. It is.

  The (B) resin layer sheet 4 shown in FIG. 4 is an electronic component support except that (B) the resin layer sheet 20 and (A) the resin film substrate 50 are cut in advance according to the shape of the member to be fixed. The structure is the same as that of the member 3. In FIG. 4, the outer edges of the cut (B) resin layer sheet 20 and (A) resin film substrate 50 are removed, but according to the shape of the member to be fixed, (B) the resin layer sheet and (A) The resin film base material may be provided with a cut and the outer edge portion may be left.

[Processing method of electronic parts]
The electronic component processing method according to the present embodiment is roughly divided into the following four steps. (A) a step of fixing the electronic component and the electronic component support member; (b) a processing step of processing the electronic component fixed to the electronic component support member; and (c) a processed electronic component from the electronic component support member. A separation step of separating, and (d) a washing step of washing when there is a residue in the electronic component.

  5 (A), 5 (B), and 5 (C) are schematic cross-sectional views for explaining an embodiment of a method for processing an electronic component, and FIG. 5 (D) shows an electron after processing. It is a top view which shows components.

<(A) Temporary fixing step>
5A shows a film-like (B) formed on the electronic component 60 from the electronic component support member 45 according to the present embodiment, that is, the (A) resin film substrate 50 and the (B) resin layer composition. ) A step of fixing the resin layer 40 is shown.

  The thickness of the electronic component 60 is not particularly limited, but can be 600 to 800 μm.

<(A-1) Formation of electronic component support member on electronic component 60>
It can be fixed by laminating a resin layer of an electronic component support member on the electronic component 60 using a roll laminator, a vacuum laminator, or the like.

The material of the electronic component of the present embodiment is not particularly selected, but a substrate such as a silicon wafer, a glass wafer, or a quartz wafer can be used.

  In the case of using a vacuum laminator, for example, a vacuum laminator LM-50 × 50-S (trade name) manufactured by NPC Corporation, or a vacuum laminator V130 (trade name) manufactured by Nichigo Morton Co., Ltd. is used. Temperature 40 ° C. to 180 ° C., preferably 60 ° C. to 150 ° C., laminating pressure 0.01 to 0.5 MPa, preferably 0.1 to 0.5 MPa, holding time 1 second to 600 seconds, preferably 30 seconds to 300 seconds. Then, the electronic component supporting member can be fixed by laminating the (B) resin layer 40 on the (C) release layer 41 side.

<(A-2) Curing of resin layer>
After fixing the electronic component 60 and the electronic component support member 45, the (B) resin layer 40 of the electronic component support member 45 is cured.
The curing method is not particularly limited as long as the film is cured, and there is a method by heat or radiation irradiation. Among these, curing by heat is preferable. The curing conditions are preferably 10 to 300 minutes at 100 to 200 ° C., more preferably 20 to 210 minutes. When the temperature is 100 ° C. or lower, the film is not cured and a problem occurs in the processing step. When the temperature is 200 ° C. or higher, outgas is generated during the curing and the film may be peeled off. Further, if the curing is 10 minutes or less, there is a problem in the processing step, and if it is 240 minutes or more, the curing time is long and the working efficiency is deteriorated.

  The (B) resin layer 40 according to this embodiment preferably has a storage elastic modulus of 10 MPa or more at 25 ° C. after being cured. When the storage elastic modulus at 25 ° C. is 10 MPa or less, the electronic component cannot be sufficiently fixed when the electronic component is thinned.

  A storage elastic modulus means the measured value at the time of measuring, using a dynamic viscoelasticity measuring apparatus (made by UBM Co., Ltd.) while raising the temperature at a rate of temperature rise of 3 ° C./min.

  When the electronic component support member having the above-described configuration is used, the electronic component can be processed at a high temperature, and the electronic component support member can be peeled off from the electronic component without residual adhesive at room temperature after the processing.

<(B) Processing step>
The processing steps include grinding, electrode formation, metal wiring formation, protective film formation and the like used at the wafer level. There is no restriction | limiting in particular in a grinding system, A well-known grinding system can be utilized. The grinding is preferably performed while cooling the electronic component and a grindstone (such as diamond) with water.

  For example, as shown in FIG. 4B, the back surface of the electronic component 80, that is, the surface opposite to the side in contact with the resin layer 70 of the electronic component 80 is ground by the grinder 90, and the thickness of about 700 μm, for example, is 100 μm or less. Thinning up to

  As an apparatus for grinding, for example, DGP-8761 (trade name) manufactured by DISCO Co., Ltd. can be cited, and the cutting conditions in this case can be arbitrarily selected according to the thickness of the desired electronic component and the grinding state.

  Specifically, other processes include metal sputtering for forming electrodes, etc., wet etching for etching metal sputtering layers, application of resist for masking the formation of metal wiring, pattern formation by exposure / development, resist coating Known processes such as peeling, dry etching, formation of metal plating, silicon etching for TSV formation, and formation of an oxide film on the silicon surface can be mentioned.

  The 1% mass reduction temperature after the heating of the (B) resin layer 70 according to the present embodiment is preferably 150 ° C. or higher. When the 1% mass reduction temperature is lower than 150 ° C., the resin layer deteriorates due to the heat of the processing step, and the electronic component member cannot be peeled off from the electronic component without residual adhesive at room temperature after processing.

The 1% mass reduction temperature was precisely weighed in 10 mg in an aluminum pan after the heating, and using a thermal analyzer (TG / DTA6300, manufactured by SII Nano Technology Co., Ltd.), the rate of temperature increase: 10 ° C./min, measurement temperature : 40 to 500 ° C., air flow rate: The temperature dependence of thermal mass loss was measured under the conditions of 300 mL / min, and 1% mass loss temperature was estimated.

  In FIG. 5C, processing such as dry ion etching or Bosch process is performed on the back surface side of the thinned electronic component 80 to form a through hole, and then processing such as copper plating is performed to form the through electrode 82. An example is shown.

  In this way, the electronic component 80 is subjected to predetermined processing. FIG. 5D is a top view of the electronic component 80 after processing. The processed electronic component 80 is further separated into semiconductor elements by dicing along a dicing line 84.

<(C) Separation process>
FIG. 6 is a schematic cross-sectional view for explaining an embodiment of a separation step for separating the processed electronic component from the electronic component support member.
The separation step according to this embodiment is a step of peeling the electronic component processed in the processing step from the electronic component support member, that is, after performing various processing on the thinned electronic component and before dicing It is the process of peeling from. Examples of the peeling method include a method in which a protective film is attached to the ground surface of the electronic component, and the electronic component and the protective film are peeled off by a peel method.

The present embodiment can be applied to all of these peeling methods, but a method in which a processed electronic component is horizontally fixed as shown in FIG. 6A and peeled in a peel method is more suitable. The electronic component 80 can be obtained (see FIG. 6B). In this embodiment, by forming a film-like pressure-sensitive adhesive using the film-like pressure-sensitive adhesive composition according to this embodiment, a processed electronic component in which residues such as adhesive residue are sufficiently reduced is easily obtained. be able to.
These peeling methods are usually performed at room temperature, but may be performed at a temperature at which there is no damage to the electronic components at about 40 to 100 ° C.

  The peeling force of the (B) resin layer according to this embodiment is preferably 300 N / m or less at a 90 ° peeling strength of 25 ° C. with respect to a support, for example, a silicon mirror wafer. If it is 300 N / m or less, it is possible to peel (B) the resin layer and the electronic component without any adhesive residue. If it is 300 N / m or more, when the electronic component supporting member is peeled from the electronic component, (B) it is not possible to peel without any adhesive residue between the resin layer and the electronic component, and a film may remain on the electronic component. There is sex.

The 90 ° peel strength was measured as follows.
A 625 μm-thick silicon mirror wafer (6 inches) is placed on the stage of a vacuum laminator (manufactured by NPC, LM-50X50-S), and the film-like adhesive obtained above is placed under layer (B). Then, it was placed so as to stick to the silicon mirror wafer side, and vacuum laminated at 15 mbar at 120 ° C./0.1 MPa / 2 minutes. The obtained sample was cured and cut into a width of 10 mm. This was subjected to a peel test at a speed of 300 mm / min with a peel tester set so that the peel angle was 90 °, and the peel strength at that time was recorded.

<(D) Cleaning step>
A part of the resin layer tends to remain on the circuit forming surface of the electronic component. When a part of the resin layer remains on the circuit forming surface of the peeled electronic component, a cleaning process for removing the resin layer can be provided. The removal of the resin layer can be performed, for example, by washing the electronic component.

  The cleaning liquid to be used is not particularly limited as long as it can remove a partially remaining resin layer, and examples thereof include the organic solvents that can be used for dilution of the resin layer composition. These organic solvents can be used individually by 1 type or in combination of 2 or more types.

  In addition, when it is difficult to remove the remaining resin layer, bases and acids may be added to the organic solvent. Examples of bases that can be used include amines such as ethanolamine, diethanolamine, triethanolamine, triethylamine, and ammonia; and ammonium salts such as tetramethylammonium hydroxide. As the acids, organic acids such as acetic acid, oxalic acid, benzenesulfonic acid, and dodecylbenzenesulfonic acid can be used. The addition amount is preferably 0.01 to 10% by mass in terms of the concentration in the cleaning liquid. In order to improve the removability of the residue, an existing surfactant may be added.

  Although there is no restriction | limiting in particular as a washing | cleaning method, For example, the method of washing | cleaning with a paddle using the said washing | cleaning liquid, the washing | cleaning method by spraying, and the method of immersing in a washing | cleaning-liquid tank are mentioned. The temperature is preferably 10 to 80 ° C., and preferably 15 to 65 ° C. Finally, washing with water or alcohol is performed, followed by drying to obtain a thin electronic component 80.

  Note that, as described above, according to the resin layer composition according to the present embodiment, residues such as adhesive residue can be sufficiently reduced, so that the cleaning step can be omitted.

  The processed electronic component 80 is formed with through electrodes 82 in the same manner as described above, and further separated into semiconductor elements by dicing along a dicing line 84 (see FIG. 3D).

  In the present embodiment, the electronic device can be manufactured by connecting the obtained semiconductor element to another semiconductor element or a semiconductor element mounting substrate.

  FIG. 5 is a schematic cross-sectional view for explaining an embodiment of a method for manufacturing an electronic device. First, the semiconductor element 100 in which the through electrode 86 is formed and separated into pieces by the above-described method is prepared (FIG. 5A). Then, by stacking a plurality of semiconductor elements 100 over the wiring substrate 110, the electronic device device 120 can be obtained (FIG. 5B).

  As mentioned above, although preferred embodiment of the manufacturing method of the electronic component support member which concerns on this invention, and the thinned electronic component was described, this invention is not necessarily limited to embodiment mentioned above, It does not deviate from the meaning. You may change suitably in the range.

  EXAMPLES Hereinafter, although an Example and a comparative example demonstrate this invention further more concretely, this invention is not limited to a following example.

(Examples 1-7, Comparative Examples 1-4)
[Preparation of varnish (film adhesive composition)]
In the composition of parts by mass shown in Tables 1 and 2, (C) the release layer comprises (C1) a thermoplastic resin, (C2) a silicone-modified resin, (C3) a curing accelerator, and a solvent, (D) The high elastic modulus layer was prepared by blending (D1) a thermoplastic resin, (D2) a curable component, (D3) a curing accelerator, and a solvent.

（（Ｂ）樹脂層の配合単位；質量部）

((B) Compounding unit of resin layer; part by mass)

（（Ｂ）樹脂層の配合単位；質量部）

((B) Compounding unit of resin layer; part by mass)

Details of each component in Tables 1 and 2 are as follows.
Q83-50: Polyethylene naphthalate (PEN) film (trade name, manufactured by Teijin DuPont Films, Inc., thickness: 50 μm)
25SGA: polyimide film (manufactured by Ube Industries, thickness: 25 μm)
G2-50: Polyethylene terephthalate (PET) film (manufactured by Teijin DuPont Films Ltd., thickness: 50 μm)
HTR-280-CHN: Acrylic rubber (manufactured by Nagase ChemteX Corporation) having a weight average molecular weight of 900,000 and Tg-28 ° C. by GPC
HTR-280-Mw1: Acrylic rubber (manufactured by Nagase ChemteX Corporation) having a weight average molecular weight of 600,000 by GPC and Tg-28 ° C.
HTR-860P-3CSP: Acrylic rubber (manufactured by Nagase ChemteX Corporation) having a weight average molecular weight of 800,000 by GPC and Tg of 12 ° C.
HTR-860P-3CSP-30B: Acrylic rubber (manufactured by Nagase ChemteX Corporation) having a weight average molecular weight of 300,000 by GPC and Tg of 12 ° C.
YDCN-700-10: Klenovo type polyfunctional epoxy resin (manufactured by Nippon Steel & Sumikin Chemical Co., Ltd.)
YDF-8170C: Bis F type bifunctional epoxy resin (manufactured by Nippon Steel & Sumikin Chemical Co., Ltd.)
XLC-LL: Phenol aralkyl resin (Mitsui Chemicals)
KF105: Epoxy-modified silicone compound (Shin-Etsu Silicone Co., Ltd.)
SH550: methyl phenyl silicone compound (manufactured by Toray Dow Chemical Co., Ltd.)
SH3773M: polyether-modified silicone compound (Toray Dow Chemical Co., Ltd.)
TA31-209E: Silicone-modified alkyd resin (manufactured by Hitachi Chemical Co., Ltd.)
2PZ-CN: Imidazole-based curing accelerator (manufactured by Shikoku Kasei Kogyo Co., Ltd.)
SC2050-HLG: Silica filler (manufactured by Admatechs Co., Ltd.)

(Comparative Examples 3 and 4)
[Synthesis of Polyimide Resin PI-1]
In a flask equipped with a stirrer, a thermometer, a nitrogen displacement device (nitrogen inflow pipe), and a reflux condenser with a moisture receiver, diamine, BAPP (trade name, 2, 2 manufactured by Tokyo Chemical Industry Co., Ltd.) -Bis [4- (4-aminophenoxy) phenyl] propane), molecular weight 410.51) and 10.26 g (0.025 mol) of 1,4-butanediol bis (3-aminopropyl) ether (Tokyo Chemical Industry Co., Ltd.) Company-made, trade name: B-12, molecular weight: 204.31) 5.10 g (0.025 mol) and solvent, N-methyl-2-pyrrolidone (NMP) 100 g, were charged and stirred to give the diamine. Dissolved in solvent. While cooling the flask in an ice bath, 26.11 g (0.05 mol) of decamethylene bistrimellitic dianhydride (DBTA) was added little by little to the solution in the flask. After completion of the addition, the solution was heated to 180 ° C. while blowing nitrogen gas, and kept for 5 hours to obtain polyimide resin PI-1. The weight average molecular weight of polyimide resin PI-1 was 50000, and Tg was 70 ° C.

A varnish for forming a film was prepared by dissolving and mixing the polyimide resin PI-1 in an NMP solvent so that the solid concentration was 50% by mass.
Using this varnish, a resin layer (B) was obtained in the same manner as described above.

[Evaluation of film adhesive]
The prepared varnish was applied onto the release-treated surface of a polyethylene terephthalate film (Teijin DuPont Films Co., Ltd., A31, thickness 38 μm) that had been subjected to release treatment, and dried by heating at 90 ° C. for 5 minutes and 140 ° C. for 5 minutes. Thus, a (B) resin layer with a protective film and a support film was obtained. (A) Resin film base material and (B) resin layer were bonded together by roll lamination at 60 ° C. to obtain an electronic component supporting member. Using the prepared film adhesives of Examples 1 to 7 and Comparative Examples 1 to 3,
According to the method shown below, the viscosity, the heat resistance evaluation at 150 ° C., the 5% mass reduction temperature, the elastic modulus after curing, the 90 ° peel strength and the peelability were evaluated.
The evaluation results are summarized in Tables 3 and 4.

[Shear viscosity measurement]
The shear viscosity of the single layer of (C) release layer and (D) high elastic modulus layer was evaluated by the following method.
(C) The release layer and (D) the high elastic modulus layer are laminated at 80 ° C. to make each thickness 120 μm, and a rotary viscoelasticity measuring device (ARES, manufactured by T.A. Instruments Inc.) is used. The measuring method is a parallel plate, the measuring jig is a circle with a diameter of 8 mm, the measuring mode is a dynamic temperature ramp, the frequency is 1 Hz, and a temperature rise rate of 20 ° C./min. The temperature was raised and the viscosity at 120 ° C. was measured.

[Step embedding]
The step embedding property of the electronic component support member was evaluated by the following method.
Grooves having a width of 40 μm and a depth of 40 μm were formed at 100 μm intervals on the surface of a 625 μm thick silicon mirror wafer (6 inches) by blade dicing. Place the stepped silicon mirror wafer on the stage of a vacuum laminator (manufactured by NP Co., Ltd., LM-50X50-S) so that the level difference of the silicon mirror wafer with the level difference is the top surface. It was installed so as to be attached to the attached silicon mirror wafer side, and was vacuum-laminated at 15 mbar at 120 ° C./0.1 MPa / 2 minutes.
Then, the state of the electronic component support member sheet | seat was confirmed using the ultrasonic microscope (SAM, Insight Inc. make, Insight-300). The evaluation criteria for embeddability are as follows.
○: Void ratio is less than 5%.
X: Void ratio is 5% or more.

[Evaluation of heat resistance at 150 ° C]
(B) The heat resistance at 150 ° C. of the resin layer was evaluated by the following method.
A 625 μm thick silicon mirror wafer (6 inches) was cut into 25 mm square pieces by blade dicing. The (C) release layer side of the (B) resin layer was roll-laminated at 80 ° C. on the surface of the silicon mirror wafer that had been cut into pieces. Next, a slide glass having a thickness of 0.1 to 0.2 mm and a size of about 18 mm square is roll-laminated at 80 ° C. on the (D) high elastic modulus layer side, and (B) the resin layer sheet is made of a silicon wafer. A laminated product sandwiched between slide glasses (slide glass, (D) a layer having a high elastic modulus, (C) a release layer, and a laminated product having a silicon mirror wafer) was produced. The obtained sample was heated at 130 ° C. for 30 minutes, then heated at 170 ° C. for 1 hour to cure the (B) resin layer sheet, and then heated at 150 ° C. for 30 minutes.
The sample thus obtained was observed from the slide glass surface, the image was analyzed with a soft wafer such as Photoshop (registered trademark), and the heat resistance at 150 ° C. was determined from the proportion of voids in the total area of the film adhesive. Evaluated. The evaluation criteria are as follows.
○: Void ratio is less than 5%.
X: Void ratio is 5% or more.

[1% mass reduction temperature]
The 1% mass reduction temperature of the single layer of (C) release layer and (D) high elastic modulus layer was evaluated by the following method.
The single layers of (C) release layer sheet and (D) high modulus layer sheet obtained above were each heated in an oven at 130 ° C. for 30 minutes and further at 170 ° C. for 1 hour. Thereafter, 10 mg of the obtained sample was precisely weighed in an aluminum pan having a diameter of 5.2 mm × 2.5 mm, and the temperature rising rate was 10 ° C. using a thermal analyzer (TG / DTA6300, manufactured by SII Nano Technology Co., Ltd.). / Min, measurement temperature: 40 to 500 ° C., air flow rate: 300 mL / min, the temperature dependence of thermal mass reduction was measured, and 1% mass reduction temperature was estimated.

[Storage modulus after curing]
The storage elastic modulus of the single layer of (C) mold release layer and (D) high elastic modulus layer was evaluated by the following method.
Single layers of the (C) release layer sheet and (D) high modulus layer sheet obtained above were roll-laminated at 80 ° C. to obtain a single layer laminated film having a thickness of 120 μm. After heating in an oven at 110 ° C. for 30 minutes and further at 170 ° C. for 1 hour, it was cut into a width of 4 mm and a length of 33 mm. The support film of the laminated film was peeled off. The obtained sample was set in a dynamic viscoelastic device (product name: Rheogel-E4000, manufactured by UBM Co., Ltd.), applied with a tensile load, measured at a frequency of 10 Hz and a temperature rising rate of 3 ° C./min, and 25 ° C. The measured value at was recorded.

[90 ° peel strength]
The 90 ° peel strength between the silicon mirror wafer and the (B) resin layer was evaluated by the following method.
Grooves having a width of 40 μm and a depth of 40 μm were formed at 100 μm intervals on the surface of a 625 μm thick silicon mirror wafer (6 inches) by blade dicing. An electronic component obtained as described above is placed on the stage of a vacuum laminator (LM-50X50-S, manufactured by NPC Co., Ltd.) so that the level difference of the silicon mirror wafer with a level difference is the top surface. The support member sheet was placed so as to stick to the stepped silicon mirror wafer side, and vacuum laminated at 15 mbar at 120 ° C./0.1 MPa / 2 minutes. The obtained sample was heated at 130 ° C. for 30 minutes, then heated at 170 ° C. for 1 hour to be cured, then heated at 200 ° C. for 30 minutes, and then cut into a width of 10 mm. This was subjected to a peel test at a speed of 300 mm / min in a 25 ° C. atmosphere with a peel tester set so that the peel angle was 90 °, and the peel strength at that time was recorded.

[Residue]
The peelability of the silicon mirror wafer and (B) resin layer was evaluated by the following method.
A 625 μm-thick silicon mirror wafer (6 inches) was placed on the stage of a vacuum laminator (manufactured by NPC, LM-50X50-S), and the silicon mirror with the (B) resin layer obtained above facing down It was installed so as to stick to the wafer side, and vacuum laminated at 120 ° C./0.1 MPa / 2 minutes at 15 mbar. The obtained sample was heated at 130 ° C. for 30 minutes, subsequently heated at 170 ° C. for 1 hour to be cured, then heated at 150 ° C. for 2 hours, and then cut into a width of 10 mm. This was subjected to a peel test at a speed of 300 mm / min in a 25 ° C. atmosphere with a peel tester set so that the peel angle was 90 °, and the presence or absence of a film residue was visually observed on the silicon mirror wafer. did.
○: No film residue visually.
X: There is a film residue visually.

  As shown in Tables 3 and 4, the electronic component support members of Examples 1 to 7 are excellent in the step embedding property and heat resistance of the silicon wafer, and the stepped silicon wafer and the electronic component support member (C) are released. It was confirmed that the 90 ° peel strength between the layers was low and the peelability was good with no residue.

DESCRIPTION OF SYMBOLS 1 ... (B) Resin layer (single layer) sheet, 2 ... (B) Resin layer (lamination | stacking) sheet, 3 ... Electronic component support member sheet, 4 ... Electronic component support member sheet, 10 ... Support film, 20 ... (B ) Resin layer sheet, 21 ... (C) Release layer, 22 ... (D) High elastic modulus layer, 30 ... Protective film, 40 ... (B) Resin layer, 41 ... (C) Release layer, 42 ... ( D) High elastic modulus layer, 45 ... electronic component support member, 50 ... (A) resin film substrate, 60 ... electronic component, 70 ... (B) resin layer, 71 ... (C) release layer, 72 ... ( D) High elastic modulus layer, 75 ... electronic component support member, 80 ... electronic component, 82 ... through electrode, 84 ... dicing line, 86 ... through electrode, 90 ... grinder, 100 ... semiconductor element, 110 ... wiring substrate, 120 ... electronic equipment.

Claims (8)

An electronic component support member that can fix an electronic component without a gap and that can be easily peeled off from the electronic component after processing the electronic component. (A) Resin film substrate and (A) One surface side of the resin film substrate (B) a resin layer, and an electronic component support member,
(B) The resin layer has (C) a release layer, (C) a release layer, and (A) a resin, the main surface of which is the opposite side of the (B) resin layer to the (A) resin film substrate. (D) a high elastic modulus layer provided between the film substrate and
(C) the release layer is (C1) a thermoplastic resin, (C2) a thermoplastic resin composition containing a silicone-modified resin, (D) the high modulus layer is (D1) a thermoplastic resin, and (D2) An electronic component support member comprising: a curable component; and (D3) a curable resin composition containing a curing accelerator,
The wafer processing method performs an electronic component fixing step of fixing the support member to the electronic component, an electronic component thinning step of thinning the electronic component, and a process involving heating at 150 ° C. or more on the thinned surface of the electronic component. An electronic component heat treatment step, and a support member peeling step for peeling the support member from the electronic component,
The silicon mirror of the resin layer after the heat treatment when the heat treatment is performed in order of heating at 130 ° C. for 30 minutes and at 170 ° C. for 60 minutes in a state of being attached to the silicon mirror wafer. An electronic component supporting member, characterized in that a 90 ° peel strength with respect to a wafer is 300 N / m or less when measured at a rate of 300 mm / min at 25 ° C., and there is no residue on the wafer after peeling.   The (D) high elastic modulus layer is subjected to the heat treatment when the (D) high elastic modulus layer and the (C) release layer are heat-treated according to the heating conditions. The electronic component support according to claim 1, wherein the storage elastic modulus at 25 ° C. of the high elastic modulus layer is a layer higher than the storage elastic modulus at 25 ° C. of the release layer (C) after the heat treatment. Element.   (C) The shear viscosity at 120 ° C. of the release layer is 20000 Pa · s or less, and (D) the shear viscosity at 120 ° C. of the high elastic modulus layer is 200 to 30000 Pa · s. The electronic component support member according to 1.   (C1) The thermoplastic resin has a high molecular weight component having a weight average molecular weight of 100000 to 1200000 and a glass transition temperature of -50 ° C to 50 ° C and having a crosslinkable functional group. The electronic component support member according to any one of the above.   (D1) The thermoplastic resin has a high molecular weight component having a weight average molecular weight of 100,000 to 1200,000 and a glass transition temperature of -50 ° C to 50 ° C and having a crosslinkable functional group. The electronic component support member according to any one of the above.   (A) The electronic component support member according to any one of claims 1 to 5, wherein the storage elastic modulus of the resin film substrate at 25 ° C is 1000 MPa or more.   (B) The electronic component support member according to any one of claims 1 to 6, wherein a 1% mass reduction temperature after the heating of the resin layer is 150 ° C or higher.   The electronic component support member according to claim 1, further comprising (C3) a curing accelerator in the release layer.

Images