TW594488B - Single-chip flash memory control system by using common bus to turn on the external ROM - Google Patents

Single-chip flash memory control system by using common bus to turn on the external ROM Download PDF

Info

Publication number
TW594488B
TW594488B TW92109938A TW92109938A TW594488B TW 594488 B TW594488 B TW 594488B TW 92109938 A TW92109938 A TW 92109938A TW 92109938 A TW92109938 A TW 92109938A TW 594488 B TW594488 B TW 594488B
Authority
TW
Taiwan
Prior art keywords
memory
read
flash memory
external
control
Prior art date
Application number
TW92109938A
Other languages
Chinese (zh)
Other versions
TW200422842A (en
Inventor
Soo-Ching Ng
Chee-Kong Awyong
Original Assignee
Phison Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Phison Electronics Corp filed Critical Phison Electronics Corp
Priority to TW92109938A priority Critical patent/TW594488B/en
Application granted granted Critical
Publication of TW594488B publication Critical patent/TW594488B/en
Publication of TW200422842A publication Critical patent/TW200422842A/en

Links

Landscapes

  • Read Only Memory (AREA)

Abstract

A single-chip flash memory control system by using common bus to turn on the external ROM is introduced. It comprises an external ROM for program code storage, at least a flash memory to be a data storage unit and a single-chip flash memory control IC that at least consists of a switch module and microprocessor. The external ROM and each flash memory connect the switch module through the same data and address buses, and the switch module connects the microprocessor to let the microprocessor control the switch module. The microprocessor is connected to the ROM channel, so it can read the program code stored in the external ROM. Or, the control switch module is controlled to connect the microprocessor and flash memory channel to access the data of flash memory. Therefore, through the common data and the address buses between the external ROM and flash memory, no additional pins are needed for connecting the single-chip IC with the external ROM. Production cost is reduced and the die size of the single-chip IC is not increased.

Description

594488 五、發昀說明(〗)594488 Fifth, the description of hair bun (〗)

【發明所屬之技術領域J 本發明為提供一種以共用匯流排方式啟動外部唯讀— 憶體之單晶片快閃記憶體控制系統,尤指系統之外部^ = 記憶體與儲存資料之快閃記憶體,透過相同之資料及位『 匯流排與該系統之微處理器相接,令該系統不需另增加^ 各快閃記憶體連接之接腳,而可降低生產成本及不合拎:、 原來之體積使用。 曰“ϋ 【先前技術】 按,現今隨著科技曰新月異及半導體技術的進 電路系統都可以整合包含在同一個積體電大 二具多功能之單晶片積體電路的出現,使得採用 =, 體芦幅地降低了生產成本,且朝— 體積更小、更巧、更便宜的方向邁進。 朝向 -個===路用Γ片之方塊示意圖, 種途徑讀取微處理器的程式上之:處?21為可透過兩 電路10内部所建立之線:碼亩ί::利用該單晶片積體 2 (…)所預先設i;程部唯讀記憶體! 積體電路! 0之外接接腳(pf:腳厂”過該單晶片 記憶體1 3 ( R Ο Μ),以利处J *接到外部唯讀 之程式瑪,然而在某些特=;取夕部唯讀記憶體" 1 3是不可避免的,例 二邮、接外部唯讀記憶體 足應用,或是内部唯二憶:部唯讀記憶體"之記憶不 做έ周弟欠你:ΛΆ _ ·,_·_! ' 594488 五、發明說明(2) 接到外部唯讀記憶體± 3 ,以雄 ^程式碼,因此,大部份之星=調整後之微處理器1 1 連接外部唯讀記憶體"之途:。積體電路1 〇都保留有 一般而言,單晶片積髀雷二α 為可重複寫入之快閃讀所採用之唯讀記憶體可分 及不可重複寫入之體(F L A s H R〇Μ) ),而使用快閃唯讀記憶妒::巧體(MASK R〇M 於它可因麻心體之早阳片積體電路,其好處在 而可以彳ρ =同Γ況需求來調整或更新微處理器程式碼, 價格#二二2進仃產品的升級,惟,此種快閃唯讀記憶體 之單S = 奋易增加生產成本;而使用遮蔽式唯讀記憶體 但杲β積體電路’其好處在於它製造成本及價格低廉, 厅疋無法更替微處理器程式碼。 |^|在匕,、夢 . 4去 二圖所_遏有一種結合上述優點之解決方法,請參閱第 片他門=i係為另一習用單晶片之方塊示意圖,即在單晶 I己恤體積體電路2 〇内部使用成本低之遮蔽式唯讀 接^ I1 (MASK ROM),同時藉由外接途徑連 ,以掩亡部快閃唯讀記憶體2 2 ( F L A S H R Ο Μ ) 此—^,原有單^片快閃記憶體積體電路2 0之功能,女 體2丄,在一般情況下可以使用較廉價之遮蔽式唯讀記精 2 0之功t特殊狀況且欲增進單晶片快閃記憶體積體電與 新微處;里ί:,便可利用外部的快閃唯讀記憶體2 2來! 電路Ρ η = 2 3之程式碼,以增進單晶片快閃記憶體積觉 然υ原有之功能。 、 …、’該單晶片快閃記憶體積體電路2 0除了連接主 明人有 體電路 各種解 於開發 憶體之 先前技 主要目 憶體控 唯讀記 動外部 之目的 料及位 腳(Ρ 鑑於前述習 之製造經驗 決的方法, 设什出本發 單晶片快閃 藝之諸多缺 的,係提供 制系統可以 憶體,在存 唯讀記憶體 ,外部唯讀 址匯流排, I Ν 腳), 2上P I N腳)外,尚需連接到複數個 =閃記憶體2 5 (FLASH 巧 體二卜接接腳(p J N腳),以及連接外部 m m之接腳(Ρ Ϊ N腳),如此,便使單 ^體電路20之接腳(piN腳)數目不 ^ :相當數量之接腳(P I N腳),才能同 、外部的快閃唯讀記憶體2 2及各快閃 檢^使它必須採用更大型之晶片封裝,即造 =°、體積增加且亦佔用較大之使用空間之 疋〇 用早晶片 和技術累 在經過不 明之以共 記憶體控 失。 一種共用 利用同一 取快閃記 的運作方 記憶體與 即共同使 同時微處 五、發明說明(3) 機端2 4之接 資料儲存單位[Technical field to which the invention belongs J. The present invention is to provide a single-chip flash memory control system that enables external read-only-memory in a shared bus mode, especially outside the system ^ = flash memory of memory and stored data The system uses the same data and bits to connect the bus to the microprocessor of the system, so that the system does not need to add additional pins for each flash memory connection, which can reduce production costs and incompatibility: Its volume use. "Previous technology" By now, with the advancement of science and technology and the advancement of semiconductor technology, circuit systems can be integrated with the emergence of multifunctional single-chip integrated circuits included in the same integrated circuit sophomore so that =, Body reed reduces production cost, and moves towards—smaller, more compact, and cheaper. Toward a block diagram of === road Γ slice, a way to read the program of the microprocessor Upper: Department? 21 is a line that can be established through the two circuits 10: Code Mu ί :: Using the single chip integrated body 2 (...) preset i; Chengbu read-only memory! Integrated circuit! 0 External pins (pf: pin factory) pass the single-chip memory 1 3 (R Ο Μ), in order to facilitate the J * received external read-only program, but in some special =; Memory " 1 3 is unavoidable. For example, post two, external read-only memory application, or internal only memory: the memory of the read-only memory is not done. Brother owes you: ΛΆ _ ·, _ · _! '594488 V. Description of the invention (2) Received external read-only memory ± 3 to the male ^ code, so, Part of the star = Adjusted microprocessor 1 1 The way to connect to the external read-only memory ". The integrated circuit 1 0 is reserved. Generally speaking, the single chip integrated Thunder II α is rewritable. The read-only memory used by flash read is detachable and non-rewriteable (FLA s HROM), and the use of flash read-only memory is jealous: Qiaoti (MASK ROM can be used for numbness) The early positive chip integrated circuit of the mind and body has the advantage that it can be adjusted or updated based on the requirements of Γρ. The price of # 22 is for upgrading the product. However, this flash only Read memory list S = Fenyi increases production cost; while using the shielded read-only memory but the β integrated circuit 'its advantage lies in its low manufacturing cost and low price, the department can not replace the microprocessor code. | ^ | Dagger, and dream. 4Go to the second picture_ There is a solution that combines the above advantages. Please refer to the first block diagram of other doors = i is a conventional single-chip block diagram, that is, the volume of the single-crystal I-shirt Body circuit 2 〇 Low-cost internal read-only connection ^ I1 (MASK ROM) In addition, the flash-only read-only memory 2 2 (FLASHR 〇 Μ) of the shelter is used for this ^, the function of the original single ^ flash memory volume body circuit 20, the female body 2 丄, which can be used under normal circumstances Cheaper read-only memory of the power of 20 special circumstances and want to improve the single chip flash memory volume and new micro-electronics; here: you can use external flash read-only memory 2 2 to ! The code of the circuit P η = 2 3 to enhance the original function of the single-chip flash memory volume.…… The single-chip flash memory volume body circuit 2 0 In addition to the main body circuit The various previous technologies that are mainly used in the development of memory are mainly designed to control the body and read only the external materials and positions (P. In view of the manufacturing experience of the previous practice, it is necessary to explain the many shortcomings of the chip's flash technology. The system can provide memory. In addition to the read-only memory, the external read-only bus, I Ν pin), 2 on the PIN pin), you need to connect to a plurality of = flash memory 2 5 (FLASH smart Body pin (p JN pin), and pin (P Ϊ) N pin), so that the number of pins (piN pin) of the single body circuit 20 is not ^: a considerable number of pins (PIN pin) can be the same as the external flash read-only memory 2 2 and each Flash inspection ^ makes it necessary to use a larger chip package, that is, manufacturing = °, increase in volume and also take up a larger use of space 疋 using early chips and technology to accumulate lost memory through unknown memory. A type of operating system that uses the same flash memory to share the same memory with the same processor at the same time. V. Description of the invention (3) Connection to the machine terminal

Memory 快閃唯讀記憶 晶片快閃記憶 足,而需另外 時連接主機端 記憶體2 5, 成生產成本之 諸點缺失與不 【發明内容】 是故,發 乃依其從事積 缺失悉心研究 與改良後,終 動外部唯讀記 生,俾能摒除 本發明之 式,令快閃記 記憶體及外部 ’仍能提供啟 根據前述 使用相同之資 址匯流排之接 之缺失與不足, 積,特針對上述 斷的研究、實驗 用匯流排方式啟 制糸統的發明誕 匯流排之使用方 匯流排連接快,閃 憶體資料的同時 式。 各快閃記憶體將 用該等資料及位 理器在運作上,Memory Flash-read-only memory chip Flash memory is sufficient, and it is necessary to connect the host-side memory 2 5 at the same time, which is the lack of production cost points [Inventive content] Therefore, according to its careful research and improvement Afterwards, the external read-only recording will not be able to eliminate the form of the present invention, so that the flash memory and the external 'can still provide the lack and deficiency of the connection using the same address bus according to the foregoing. The above-mentioned researches and experiments used the bus method to start the system's invention. The user of the bus was connected quickly, and the flash memory data was synchronized. Each flash memory will use this data and the processor in operation,

594488 五、發明說明(4) .____ =開外部唯讀記憶體與各快閃記憶體t啟動時間,令_ :器=取外部唯讀記憶體之程式瑪時,不啟動快;= ,,在存取㈣記㈣之資料,錢處理^於等以 二不讀取外部唯讀記憶體之程式碼,#此-來,單曰曰、 」S己憶體控制系統即不需大幅增加接㈣(p工n腳曰)曰 月b ^備與外部唯讀記憶體、各快閃記憶體連接之 「二:S影響該系統之單晶片的封裝規劃。 ^ L貫施方式】 奘蓄為It /貝審查委員能對本發明之目的、形狀、構造、 ^ n入徵及其功效,做更進一步之認識與瞭解,茲舉實 施例配合圖示詳細說明如下。 鉍牛只 )、2二,一、四圖所不,係為本發明之方塊示意圖(一 A^ :^ ’其包括有快閃記憶體控制積體電路3 0、作 ;f ^:;石唯讀記憶體31 (如快閃唯讀記憶體 …=丄。:;少:個作為【料儲存單位 .. ^ ^ ^ L A S H MEMORY);豆中 料1位I ^己,體3 1與各快閃記憶體3 2為透過相同之資 模…與該快閃記憶體控制積體電路3 〇之切換 ϊ?〇1=:,Γ模組3 9與快閃記憶體控制積體電 紛ο u之微處理益3 4相接。 、 部唯況下,其微處理器3 4需時時讀取外 二1中預先設定之微處理器程式,,因此, -、“t思體控制積體電路3 〇操控内部邏輯電路3 5將594488 V. Description of the invention (4). ____ = Turn on the external read-only memory and the flash memory t to activate the time, so _: device = when the program memory of the external read-only memory is taken, do not start fast; = ,,, When accessing the data of ㈣ 记 ㈣, the money is processed ^ wait for not to read the code of the external read-only memory, # this-come, single said, "S the memory control system does not need to significantly increase access ㈣ (p work n foot) 曰 month b ^ Preparation of connection with external read-only memory, each flash memory "two: S affects the packaging planning of the single chip of the system. ^ L implementation method] It / Beijing reviewers can further understand and understand the purpose, shape, structure, entry and effect of the present invention, and the examples are described in detail with the illustrations below. Bismuth cattle), 22, Figures 1 and 4 are not schematic diagrams of the present invention (a A ^: ^ ', which includes flash memory control integrated circuit 30, operation; f ^ :; Shi Wei read memory 31 (such as fast Flash read-only memory ... = 丄.:; Less: one as [material storage unit .. ^ ^ ^ LASH MEMORY); bean material 1 bit I ^ self, body 3 1 and each fast The flash memory 3 2 is the same as the flash memory control integrated circuit 3 and the switching of the flash memory control integrated circuit 3 〇 1 = :, Γ module 39 and the flash memory controlled integrated circuit are different. U The micro processing benefits 34 are connected. Under the circumstances, the microprocessor 3 4 takes time to read the preset microprocessor program in the external 2 1. Therefore,-, "t think of the control product Circuit 3 〇 Control internal logic circuit 3 5 will

第8頁 五、發明 切換模組3 3切換至 之通道相連通的位置 ,3 1、外部唯讀記 讓微處理器3 4可自 袄式碼;再者,當微 資料時,其快閃記憶 3 4與外部唯讀記憶 之等待狀態控制電路 ,不再讀取外部唯讀 冗憶體控制積體電路 組3 3切換至快閃記 路3 0之内部暫存器 模組3 9相連接,使 快閃記憶體3 2中存 呂己憶體控制積體電路 模組3 3之切換動作 憶體3 1之通道相連 4,進而觸發微處理 體3 1中之程式碼。 快閃記憶體3 2共用 该糸統不需另增加與 Ρ I Ν腳),因此, 體積。 請參閱四、五圖 微處理器3 ,而使微處 憶體模組3 外部唯讀記 處理器3 4 體控制積體 體3 1之通 3 7 ’令微 記憶體3 1 3 0操控内 憶體3 2與Page 8 V. Invent the switching module 3 3 The position to which the channel is connected. 3 1. The external read-only memory allows the microprocessor 3 4 to self-code. Furthermore, when micro data is used, it flashes quickly. The memory 3 4 is connected to the external read-only memory waiting state control circuit, and the external read-only redundant memory control integrated circuit group 3 3 is switched to the internal register module 3 9 of the flash memory path 30. The flash memory 31 is connected with the switching operation of the Lu Jiyi body control integrated circuit module 3 3 and the channel of the memory body 31 is connected to 4, thereby triggering the program code in the microprocessor 31. The flash memory 32 is shared by the system, and there is no need to add another pin (P IN pin), so the size. Please refer to Figures 4 and 5 for the microprocessor 3, so that the micro memory module 3 is externally read-only processor 3 4 The body controls the integrated body 3 1 through 3 7 'makes the micro memory 3 1 3 0 controlled inside Memories 3 2 with

3 6 ( B U 微處理器3 取資料;待 3 0之内部 ’令回復微 通,並傳送 益3 4繼績 如此,透過 相同之資料 各快閃記憶 可降低生產 4與外部唯 理器3 4與 8之通道保 憶體3 1中 欲存取快閃 電路3 0將 道,並操控 處理器3 4 之程式碼, 部邏輯電路 該快閃記憶 F F E R ) 4能經由暫 存取動作結 邏輯電路3 處理器3 4 一恢復訊號 執行及讀取 外部唯讀記 及位址匯流 體3 2連接 成本,亦不 讀記憶 外部唯 持暢通 讀取其 記憶體 中斷微 微處理 處於等 同時’ 3 5將 體控制 、快閃 存器3 束後, 5會操 與外部 至微處 外部唯 憶體3 排的方 之接腳 會增加 體3 1 讀記憶 ’進而 内存之 3 2中 處理器 器3 4 待模式 該快閃 切換模 積體電 記憶體 6而自 該快閃 控切換 唯讀記 理器3 讀記憶 1與各 式,令 ( 整體之 所示,係為本發明之方塊示意圖3 6 (BU microprocessor 3 fetches data; waits for the internal '30 to make the reply micro-pass and transmit benefits 3 4 Following this, through the same data each flash memory can reduce production 4 and external processors 3 4 and The channel memory 8 of 8 wants to access the flash circuit 3 0, and controls the code of the processor 3 4, the logic circuit of the flash memory FFER) 4 The logic circuit 3 can be completed through the temporary access action 3 Processor 3 4 One resumes signal execution and reads external read-only records and address sinks. 3 2 connection cost, also does not read memory. External only keeps reading. Its memory is interrupted. Pico processing is waiting at the same time. 3, fast flash memory, 5 will be connected to the external memory to the external memory of the 3 rows of square pins will increase the body 3 1 read memory 'and then the memory 3 2 processor processor 3 4 standby mode should be fast The flash-switched modular electrical memory 6 is switched from the flash-controlled read-only register 3 to read the memory 1 and various types, so (shown as a whole, it is a block diagram of the present invention

第9頁 594488 制 憶 理 發明課明(6) 及動作流 積體電路 體3 1中 5 0 1) 圖(--) J Jr τ-, Q ) ’ 在正常情況下,其快閃記憶體控 3 0為使微處理器3 4保持在讀取外部唯讀記 預先α又疋之私式碼,並將依下列之步驟進行處 憶 下 5 0 2 ) 5 0 3 ) 請參閱 體3 2中 列之步驟6 0 1) 0 2 6 0 首先,該快閃記憶 内部邏輯電路3 $ 理器3 4與外部唯 之位置; 令微處理器3 4與 保持暢通; 其微處理器3 4可 取其内存之程式碼 四、六圖所示,當 資料時,其快閃記 進行處理: 首先,該快閃記憶 處理^§ 3 4與外部 操控微處理器3 4 令微處理器3 4處 唯讀記憶體3 1之 再操控内部邏輯電 至快閃記憶體3 2 接, 開啟快閃記憶體3 體控制積體電路3 0為操控 將切換模組3 3切換至微處 讀記憶體3 1之通道相連通 外部唯讀記憶體3 1之通道 自外部唯讀記憶體3 1中讀 ,嗣,結束。 微處理器3 4欲存取快閃記 憶體控制積體電路3 〇將依 體控制積體電路3 〇中斷微 唯讀記憶體3 1之通道,並 之等待狀態控制電路3 7, 於等待模式,不再讀取外部 程式碼; 路3 5將切換模、組3 3切換 與快閃記憶體模組3 9相連 2到快閃記憶體控制積體電Page 9 594488 Memories of Invention and Inventory (6) and Action Flow Integration Circuit Body 3 1 in 5 0 1) Figure (-) J Jr τ-, Q) 'Under normal circumstances, its flash memory Control 3 0 is to keep the microprocessor 3 4 from reading the external read-only pre-α private code, and it will be remembered according to the following steps: 5 0 2) 5 0 3) See body 3 2 Step 6 in the list 6 0 1) 0 2 6 0 First, the flash memory internal logic circuit 3 $ processor 3 4 and the external only position; keep the microprocessor 3 4 and open; its microprocessor 3 4 is desirable The memory code is shown in Figures 4 and 6. When data is stored, its flash memory is processed: First, the flash memory is processed ^ § 3 4 and the externally controlled microprocessor 3 4 makes the microprocessor 34 read-only Memory 3 1 and then control the internal logic to flash memory 3 2 and turn on flash memory 3 to control the integrated circuit 3 0 to switch the switching module 3 3 to micro-read memory 3 1 The channels are connected to the external read-only memory 31, and the channel is read from the external read-only memory 31, and it is finished. The microprocessor 3 4 wants to access the flash memory control integrated circuit 3 〇 will control the integrated integrated circuit 3 〇 interrupt the channel of the micro read-only memory 31 and wait for the state control circuit 37 in the wait mode , No longer read external code; Road 3 5 will switch mode, group 3 3 switch and flash memory module 3 9 2 to flash memory control integrated circuit

第10頁Page 10

4 ο Ο Ο 此 外 路3 Ο之内部暫存器3 令快閃記憶體3 2之資 快閃記憶體3 2與内部 B U F F E R )間相互 能經由暫存器3 6而存 待存取動作結束後,關 道,並將切換模組3 3 外部唯讀記憶體3 1、 3 8之通道相連通; 啟動微處理器3 4與外 通道,並傳送^一恢復訊 觸發微處理器3 4回復 束。 其快閃記憶體3 2可進 6的通道; 料可以通過此通道 暫存器3 6 ( 傳輸,使微處理器 取此資料; 閉快閃記憶體3 2 切換回微處理器3 外部唯讀記憶體模 部唯讀記憶體3 1 號至微處理器3 4 至原工作模式,嗣 ,在 3 4 之通4與 間之 ,以 ,結 步為快閃記憶體陣列 。 以上戶斤述,僅為本發明最佳具體實施例而已,惟,本 發明之構造特徵並不侷限於此,任何熟悉該項技藝者在本 發明領域内,可輕易思及之變化或修飾,皆可涵蓋在以下 本案之專利範圍。4 ο Ο Ο In addition, the internal register 3 of the external channel 3 0 enables the flash memory 32 to be used for mutual storage between the flash memory 3 2 and the internal BUFFER) via the register 36 and to be stored after the access operation ends , Close the channel, and connect the channel of the external read-only memory 3 3, 3 8 of the switch module 3; start the microprocessor 3 4 and the external channel, and send a recovery signal to trigger the microprocessor 3 4 response beam . Its flash memory 3 2 can enter 6 channels; materials can be transmitted through this channel register 36 (to enable the microprocessor to access this data; closed flash memory 3 2 switch back to microprocessor 3 external read-only The memory module only reads the memory No. 31 to the microprocessor 3 4 to the original working mode. Alas, the pass from 3 to 4 is in between, and the step is the flash memory array. It is only the best embodiment of the present invention. However, the structural features of the present invention are not limited to this. Any changes or modifications that can be easily considered by those skilled in the art in the field of the present invention can be covered in the following. The patent scope of this case.

第11頁 594488 圖式簡單說明 . 【圖式簡單說明】 第一圖 係為習用單晶片之方塊示意圖。 第二圖 係為另一習用單晶片之方塊示意圖。 第三圖 係為本發明之方塊示意圖(一)。 第四圖 係為本發明之方塊示意圖(二)。 第五圖 係為本發明之動作流程圖(一)。 第六圖 係為本發明之動作流程圖(二)。 【元件符號說明】 1 0、單晶片積體電路 1 1、微處理器 1 2、内部唯讀記憶體(R〇Μ ) 1 3、外部唯讀記憶體(R〇Μ ) 2 0、單晶片快閃記憶體積體電路 2 1 、遮蔽式唯讀記憶體(M A S K ROM) 2 2、外部快閃唯讀記憶體 2 3、微處理器 2 4、主機端 — ’ 2 5、快閃記憶體 3 0、快閃記憶體控制積體電路Page 11 594488 Schematic illustration. [Schematic description] The first diagram is a block diagram of a conventional single chip. The second figure is a block diagram of another conventional single chip. The third diagram is a block diagram (1) of the present invention. The fourth diagram is a block diagram (two) of the present invention. The fifth figure is the operation flowchart (1) of the present invention. The sixth diagram is the operation flowchart (2) of the present invention. [Description of component symbols] 1 0, single-chip integrated circuit 1 1, microprocessor 1, 2. internal read-only memory (ROM) 1 3. external read-only memory (ROM) 2 0, single chip Flash memory volume circuit 2 1, Masked read-only memory (MASK ROM) 2 2, External flash read-only memory 2 3, Microprocessor 2 4, Host-side — '2 5, Flash memory 3 0.Flash memory control integrated circuit

第12頁 594488 圖式簡單說明 3 1、外部唯讀記憶體 3 2、快閃記憶體 3 3、切換模組 3 4、微處理器 35、内部邏輯電路 3 6 、内部暫存器 3 7、等待狀態控制電路 3 8、外部唯讀記憶體模組 3 9、快閃記憶體模組Page 12 594488 Simple description of the diagram 3 1. External read-only memory 3 2. Flash memory 3 3. Switching module 3 4. Microprocessor 35. Internal logic circuit 3 6. Internal register 3. 7. Waiting state control circuit 3 8, external read-only memory module 3 9, flash memory module

Claims (1)

六、申請專到範圍 1、一種以共 快閃記憶 、作為儲 資料儲存 該外部唯 及位址匯 相連接, 之微處理 控制積體 處理器與 處理器與 處理器可 當微處理 體控制積 通道,並 理器處於 碼,同時 電路將切 之内部暫 快閃記憶 記憶體控 之切換動 道相連通 處理器繼 用匯流排 體控制系 存程式碼 單位之快 讀記憶體 流排與快 而切換模 器相接, 電路操控 外部唯讀 外部唯讀 自外部唯 器欲存取 體電路將 操控微處 等待模式 ,該快閃 換模組切 存器相連 體中存取 制積體電 作,令回 ,並傳送 續執行及 方式啟動 統,係包 之外部唯 閃記憶體 與各快閃 閃記憶體 組則與該 而可於正 内部邏輯 記憶體之 記憶體之 讀記憶體 快閃記憶 中斷微處 理器之等 ,不再讀 記憶體控 換至快閃 接,使微 資料;待 路之内部 復微處理 一恢復訊 讀取外部 外部唯 括有快 讀記憶 ;其中 記憶體 控制積 快閃記 常情況 電路將 通道相 通道保 中讀取 體中資 理器與 待狀態 取外部 制積體 記憶體 處理器 存取動 邏輯電 器與外 號至微 唯讀記 讀記憶體之單晶片 閃記憶體控制晶片 體及至少一個作為 為透過相同 體電路之切 憶體控制積 下,使快閃 切換模組切 連通之位置 持暢通,進 其内存之程 料時,其快 外部唯讀記 控制電路, 唯讀記憶體 電路操控内 與該控制積 能經由暫存 作結束後, 球會操控切 部唯讀記憶 處理器,以 憶體中之程 之資料 換模組 體電路 記憶體 換至微 ,讓微 而使微 式碼; 閃記憶 憶體之 令微處 之程式 部邏輯 體電路 器而,自 該快閃 換模組 體之通 觸發微 式碼。VI. Application specific scope 1. A kind of micro-processing control integrated processor and processor and processor which can be used as a micro-processor control product by using a common flash memory as the storage data to store the external only address pool. The channel and the processor are in the code, and the circuit connects the internal flash memory with the switching control of the flash memory. The processor continues to use the bus to control the fast-read memory stream of the code unit. The switching module is connected, the circuit controls the external read only, and the external read only reads from the external device. The circuit that will access the micro controller will control the micro-wait mode. Order back, and send the resumption of execution and the way to start the system. The external flash memory and the fast flash memory groups included in the package are the same as those that can be read in the memory of the internal logical memory. The flash memory is interrupted. Processor, etc., no longer read the memory control and switch to flash connection to enable micro data; the internal micro-processing of the path to wait for recovery information to read the external external only fast-read memory; Intermediate memory control, flash memory, normal condition circuit, channel phase, channel protection, read processor, standby status, external memory processor, access to logic appliances and nicknames The single-chip flash memory control chip body of the body and at least one of the chips are controlled by the same body circuit to keep the flash switching module open and closed. When it enters its memory, it is fast. External read-only memory control circuit. After the read-only memory circuit is controlled and the control product can be temporarily stored, the club will control the cut-only read-only memory processor to exchange the data in the memory for the module circuit. The memory is changed to micro, and the micro is used to make the micro code; the flash memory is used to program the logic part of the logic department, and the micro code is triggered from the flash module. 594488 六、申請專利範圍 2、 如申請專利範圍第1項所述之以共用匯流排方式啟動 外部唯讀記憶體之單晶片快閃記憶體控制系統,其中 該快閃記憶體亦可進一步為快閃記憶體陣列。 3、 如申請專利範圍第1項所述之以共用匯流排方式啟動 外部唯讀記憶體之單晶片快閃記憶體控制系統,其中 該外部唯讀記憶體可為一快閃唯讀記憶體。594488 VI. Application for Patent Scope 2. Single-chip flash memory control system for activating external read-only memory by using a shared bus as described in item 1 of the scope of patent application, where the flash memory can be further Flash memory array. 3. The single-chip flash memory control system for activating external read-only memory as described in item 1 of the scope of patent application, wherein the external read-only memory can be a flash-read-only memory.
TW92109938A 2003-04-28 2003-04-28 Single-chip flash memory control system by using common bus to turn on the external ROM TW594488B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW92109938A TW594488B (en) 2003-04-28 2003-04-28 Single-chip flash memory control system by using common bus to turn on the external ROM

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW92109938A TW594488B (en) 2003-04-28 2003-04-28 Single-chip flash memory control system by using common bus to turn on the external ROM

Publications (2)

Publication Number Publication Date
TW594488B true TW594488B (en) 2004-06-21
TW200422842A TW200422842A (en) 2004-11-01

Family

ID=34076131

Family Applications (1)

Application Number Title Priority Date Filing Date
TW92109938A TW594488B (en) 2003-04-28 2003-04-28 Single-chip flash memory control system by using common bus to turn on the external ROM

Country Status (1)

Country Link
TW (1) TW594488B (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100359544C (en) * 2005-05-10 2008-01-02 友达光电股份有限公司 Display drive chip and method for transmitting data thereof
TWI472915B (en) * 2007-05-23 2015-02-11 Samsung Electronics Co Ltd Semiconductor memory system having volatile memory and non-volatile memory that share bus, and method of controlling operation of non-volatile memory
US9881158B2 (en) 2011-10-21 2018-01-30 Insyde Software Corp. Secure option ROM control

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100359544C (en) * 2005-05-10 2008-01-02 友达光电股份有限公司 Display drive chip and method for transmitting data thereof
TWI472915B (en) * 2007-05-23 2015-02-11 Samsung Electronics Co Ltd Semiconductor memory system having volatile memory and non-volatile memory that share bus, and method of controlling operation of non-volatile memory
US9881158B2 (en) 2011-10-21 2018-01-30 Insyde Software Corp. Secure option ROM control

Also Published As

Publication number Publication date
TW200422842A (en) 2004-11-01

Similar Documents

Publication Publication Date Title
JPH0472255B2 (en)
WO1984002222A1 (en) Multiple simultaneous access memory
EP2425346B1 (en) Multi-port memory devices and methods
JP3157932B2 (en) Interface circuit for IC card
US4458163A (en) Programmable architecture logic
CN100357870C (en) Method of proceeding access multikind storage on chip select outer unibus
TW594488B (en) Single-chip flash memory control system by using common bus to turn on the external ROM
US20080059687A1 (en) System and method of connecting a processing unit with a memory unit
US9083340B1 (en) Memory matrix
JPS61250739A (en) Data source system
JP2000215108A (en) Semiconductor integrated circuit
JP2002140284A (en) Micro-controller
CN1328646C (en) Semiconductor device containing changeable detdcting circuit and its starting method
US6700402B2 (en) Output control circuit and output control method
US5862408A (en) Microprocessor system having multiplexor disposed in first and second read paths between memory CPU and DMA for selecting data from either read path
US8656116B2 (en) Integrating plurality of processors with shared memory on the same circuit based semiconductor
JPS6348688A (en) Memory device
JPH03214275A (en) Semiconductor integrated circuit
JPS58129669A (en) Two-chip microcomputer
JPS62109285A (en) Switching circuit for ram bank of microcomputer
JP2008287571A (en) Shared memory switching circuit and switching method
JPH03238855A (en) Custom lsi
JPH01266651A (en) Semiconductor memory device
JPH05241946A (en) Random access memory device with built-in rom
JP2001222899A (en) Semiconductor integrated circuit

Legal Events

Date Code Title Description
MK4A Expiration of patent term of an invention patent