TW574234B - Thermally cured underlayer for lithographic application - Google Patents

Thermally cured underlayer for lithographic application Download PDF

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TW574234B
TW574234B TW91104609A TW91104609A TW574234B TW 574234 B TW574234 B TW 574234B TW 91104609 A TW91104609 A TW 91104609A TW 91104609 A TW91104609 A TW 91104609A TW 574234 B TW574234 B TW 574234B
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Binod B De
Sanjay Malik
Gregory Spaziano
John Joseph Biafore
Patrick Foster
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Arch Spec Chem Inc
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    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F212/00Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
    • C08F212/02Monomers containing only one unsaturated aliphatic radical
    • C08F212/32Monomers containing only one unsaturated aliphatic radical containing two or more rings
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/09Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/094Multilayer resist systems, e.g. planarising layers
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/09Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement

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  • Medicinal Chemistry (AREA)
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  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Materials For Photolithography (AREA)

Description

574234 A7 ____________ B7 五、發明説明(1 ) 發明之技術頜谈 本發明係有用於製造半導體之深紫外線微影技術,及 更詳細地係有關用於化學放大型雙層阻劑系統之底塗層。 發明之背景說明 積體電路之製造,端賴使用光微影方法以界定微電子 裝置上之活性元件與互連結構。直到最近,才在大部分的 微影應用上使用g-line(436奈米)與I-line(365奈米)波長的 光。然而’為達到更小尺寸的解析度,已將用於半導體製 造之微米微影技術中之光波長,降至254奈米與193奈米之 深紫外線區。使用深紫外線波長所面臨之問題,在於在較 高波長所用的阻劑之吸光性過高及感度過低。因此,為使 用深紫外線波長,需要具有低吸光性及增進的感度之阻劑 物質。 最近經由使用酸不安定性聚合物而發展出化學放大型 阻劑物質,以符合上述標準。其等顯示在增加解析度方面 極具潛力。然而,化學放大型阻劑系統具有許多缺點。其 中之一個問題係駐波效應,其係當曝光期間單色光自反射 f生基材的表面反射之時發生。若在阻劑中形成駐波現象, 將降低解析度及造成線寬之變動。例如,在正型阻劑中之 駐波,具有在阻劑/基材介面形成一底腳(F〇〇t)之傾向,而 降低該阻劑之解析度。 此外,化學放大型阻劑的特性與解析度,可能因基材 毒害效應而改變。更詳細地,該效應係當基材具有一氮化 物層之時發生。據信氮化物薄膜中的殘餘邮鍵,將位於 本紙張尺度適用中國國家標準(CNS) A4規格(21〇χ297公釐) 4 …参… / - (請先閱讀背面之注意事項再填寫本頁) 、\吞. 574234 五、發明説明(2 氮化物/阻劑介面之酸予以去活化。就一正型阻劑而言,其 造成一不可溶區域,及於氮化物/阻劑介面產生阻劑浮污或 底腳。 更進一步,微影弦徑比需要使用薄的化學放大型阻劑 (如約0.5微米以下),以印刷〇.18微米以下的輪廓。其進而 需要使用具有極佳的抗電漿蝕刻性之阻劑,藉此可將阻劑 圖案輪廓轉移至下方的基材。然而,為減低化學放大型阻 劑之吸光度,已將如酚醛樹脂中之該等芳香族基移除,此 進而降低抗蝕刻性。 在施用化學放大型薄膜之前,在基材上放置一底層或 底塗層薄膜,可減少上述的問題。該底塗層吸收大部分的 深紫外光,而減弱駐波效應。此外,底塗層防止在阻劑/ 基材介面之酸催化劑的去活化作用。更進一步,底塗層 含有一些芳香族基,以提供抗蝕刻性。 在典型的雙層阻劑方法中,底塗層係施用於基材_ 上。然後在底塗層上施用化學放大型阻劑,其暴露於深紫 外光,然後經顯影而在化學放大型阻劑的表塗層形成 案。然後將雙層阻劑置於一氧電漿餘刻環境中,以韻刻 於已藉由顯影作用除去化學放大型阻劑的區域之底塗層 在雙層系統中之化學放大型阻劑典型地含有矽,因而可 由將矽轉化為二氧化矽而耐受氧電漿蝕刻作用,二氧化矽 則可耐受蝕刻製程。在底部層經蝕刻處理之後,阻劑系 可用於後續的加工處理,諸如用於移除下方基材之非氧 漿蝕刻化學製程。 可 之 圖 位 藉 統 電 本紙張尺度適用中國國家標準(CNS) A4規格(21〇χ297公楚) 574234 A7 _ B7 1 — -__— _ 五、發明説明(3 ) 雖然底塗層可減弱駐波與基材毒害效應,其亦引發其 他問題。首先,一些底塗層可溶於化學放大型阻劑溶劑組 /[刀。右在表塗層與底塗層之間存在互相摻混現象,將損及 表面阻劑層之解析度與感度。 此外,若化學放大型阻劑與底塗層之折射率差異大, 光將從底塗層反射而造成阻劑中之駐波效應。因此,必須 使該二層的折射率之實際部份“ n,,成為實質相符,或使其等 之差異減至最低;及必須將該二層的折射率之假想部份”k,, 加以最佳化,以減少反射效應。 底塗層之另一問題,在於其等因納入芳香族基而具有 過高的吸光性。一些用於製造半導體的深紫外線曝光器 具,係在光阻曝光及在將曝光光罩對準於光阻下方的層之 製程中,使用相同波長的光。若底塗層之吸光性過高,對 準作用所需的反射光將過度弱化而無法適用。然而,若底 塗層之吸光性不足,則可能發生駐波。配方設計者必須在 該二競爭性目標之間取得平衡。 此外,一些底塗層對於蝕刻化學製程之抗電漿蝕刻性 極差。底塗層之抗蝕刻性應與酚醛樹脂的蝕刻率相當,方 能具有商業適用性。 更進一步,一些底塗層需要紫外線曝光處理以形成交 聯,然後方可施用對輕射敏感的阻劑表塗層。紫夕卜線交聯 性綠層之問題,在於其等需要長時間的曝光,方能形成 足里的父聯作用。長的時間曝光將使產出嚴重地受限,及 增加製造積體電路的成本。同時,紫外線器具並不提供均 本紙張尺度適^瞻鲜(⑽)A4規格(2K)X2J^J7--—574234 A7 ____________ B7 V. Description of the invention (1) Technical invention of the invention The invention relates to the deep ultraviolet lithography technology used in the manufacture of semiconductors, and more specifically to the primer coating for chemically amplified double-layer resist systems . BACKGROUND OF THE INVENTION The fabrication of integrated circuits relies on the use of photolithography to define active components and interconnect structures on microelectronic devices. Until recently, g-line (436 nm) and I-line (365 nm) light were used in most lithography applications. However, in order to achieve a smaller resolution, the wavelength of light in the microlithography technology used in semiconductor manufacturing has been reduced to the deep ultraviolet region of 254 nm and 193 nm. The problem with using deep UV wavelengths is that the resist used at higher wavelengths has too high light absorption and too low sensitivity. Therefore, in order to use a deep ultraviolet wavelength, a resist substance having low light absorption and improved sensitivity is required. Recently, chemically amplified resist substances have been developed through the use of acid-labile polymers to meet the aforementioned standards. These have shown great potential for increasing resolution. However, chemically amplified resist systems have many disadvantages. One of these problems is the standing wave effect, which occurs when monochromatic light is reflected from the surface of a green substrate during exposure. If a standing wave phenomenon is formed in the resist, the resolution will be reduced and the line width will be changed. For example, a standing wave in a positive resist has a tendency to form a foot (Fot) at the resist / substrate interface, and reduces the resolution of the resist. In addition, the characteristics and resolution of chemically amplified resists may change due to the toxic effects of the substrate. In more detail, the effect occurs when the substrate has a nitride layer. It is believed that the residual postal bonds in the nitride film will be located on this paper scale and apply the Chinese National Standard (CNS) A4 specification (21 × 297 mm) 4… see ... /-(Please read the precautions on the back before filling this page ), \ Swallow. 574234 V. Description of the invention (2 The acid of the nitride / resistor interface is deactivated. In the case of a positive resist, it causes an insoluble region, and it causes resistance at the nitride / resistor interface. Smearing or footing of the agent. Furthermore, the lithography chord ratio requires the use of a thin chemically amplified resist (eg, about 0.5 microns or less) to print a profile below 0.18 microns. It further requires the use of an excellent Resistant to plasma etching, which can transfer the resist pattern profile to the underlying substrate. However, in order to reduce the absorbance of chemically amplified resists, such aromatic groups as phenolic resins have been removed This further reduces the resistance to etching. Before applying the chemically amplified film, placing a primer or primer film on the substrate can reduce the above problems. The primer coating absorbs most of the deep ultraviolet light and weakens the Wave effect. Also, the bottom The coating prevents deactivation of the acid catalyst at the resist / substrate interface. Furthermore, the undercoat layer contains some aromatic groups to provide resistance to etching. In a typical two-layer resist method, the undercoat layer is It is applied on the substrate. Then, a chemically amplified resist is applied on the undercoat layer, which is exposed to deep ultraviolet light, and then developed to form a surface coating on the chemically amplified resist. Then a double-layered resist is formed. The chemically amplified resist in a two-layer system, which is placed in an oxygen plasma remaining environment and is engraved on the area where the chemically amplified resist has been removed by development, typically contains silicon, so it can be changed by Convert silicon into silicon dioxide to withstand oxygen plasma etching. Silicon dioxide can withstand the etching process. After the bottom layer is etched, the resist can be used for subsequent processing, such as for removing the bottom Chemical process for non-oxygen slurry etching of substrates. The available maps are based on the standard of Chinese paper (CNS) A4 (21〇297297). 574234 A7 _ B7 1 — -__— _ 5. Description of the invention (3) Although the bottom The layer can reduce the toxic effect of standing waves and the substrate, which also causes other problems. First, some primer coatings are soluble in the chemically amplified resist solvent group / [knife. There is a mutual interaction between the top coating and the base coating. The mixing phenomenon will damage the resolution and sensitivity of the surface resist layer. In addition, if the refractive index difference between the chemically amplified resist and the undercoat layer is large, light will reflect from the undercoat layer and cause standing waves in the resist. Therefore, the actual part of the refractive index of the two layers "n, must be substantially consistent, or the difference between them must be minimized; and the imaginary part of the refractive index of the two layers" k, It is optimized to reduce the reflection effect. Another problem of the undercoat layer is that it has an excessively high light absorption due to the inclusion of aromatic groups. Some deep ultraviolet exposure devices used in the manufacture of semiconductors are based on photoresist In the process of exposing and aligning the exposure mask to the layer under the photoresist, light of the same wavelength is used. If the light absorption of the undercoat layer is too high, the reflected light required for the alignment effect will be excessively weakened and cannot be applied. However, if the light absorption of the undercoat layer is insufficient, standing waves may occur. The formulator must strike a balance between these two competing goals. In addition, some primers are extremely poor in plasma etch resistance for etching chemical processes. The etch resistance of the undercoat layer should be comparable to that of the phenolic resin to be commercially applicable. Furthermore, some undercoats require UV exposure to form crosslinks before applying light-sensitive resist topcoats. The problem with the cross-linking green layer of the purple line is that it requires a long time exposure before it can form a paternal effect. Prolonged exposure will severely limit output and increase the cost of manufacturing integrated circuits. At the same time, UV appliances do not provide uniform paper sizes. Appropriate (⑽) A4 size (2K) X2J ^ J7 ---

f: - (請先閲讀背面之注意事項再填寫本頁) .訂丨 574234 A7 B7 五、發明説明(4 ) (請先閲讀背面之注意事項再填寫本頁) 一的曝光程度,藉此底塗層的部份區域之交聯程度可能高 於底塗層的其他區域。此外,紫外線交聯曝光器具非常昂 貴,及通常因成本與空間限制之故而未納入大部分的光阻 塗蓋器具中。 一些底塗層係藉由加熱而進行交聯。然而,該等底塗 層的問題在於其等需要高固化溫度高及長固化時間,然後 方能施用頂層。為具有商業適用性,底塗層應在低於250 °C之溫度固化,及固化時間應少於180秒。在固化之後,底 塗層應具有高的玻璃轉化溫度,以耐受後續的高溫加工處 理及避免與光阻層摻混。 因此,最近曾提議在深紫外線微影製程中使用熱固化 底塗層,其係使用含有特定的羥基官能化聚合物、熱酸生 成化合物及胺交聯劑之組成物。提議用於該等熱固化底塗 層組成物中之羥基官能化聚合物,係聯苯基甲基丙烯酸酯 (BPMA)與2-羥基乙基甲基丙烯酸酯(hema)之共聚物,其 一般與一熱酸生成化合物(TAG)及一胺交聯劑併用。 然而,所提議之該熱固化底塗層(TCU)組成物,面臨 下列議題: (a) 目前的248奈米TCU世代在一般晶邊清除(EBR)溶 劑(諸如丙二醇單甲基醚乙酸酯(PGMEA)、乳酸乙酯(EL)、 乙基乙氧基丙酸g旨(EEP)等)中之溶解度與相容性; (b) 駐波,可能歸因於底塗層與基材及圖案層(IL)之光 參數(η與k)未能具有最佳的相符程度之故;及 (c) 在TCU/圖案層(IL)介面之浮污。 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公爱) η 574234 A7 B7 五、發明説明(5 ) 在所提議的熱固化底塗層(TCU)組成物中,雖然可促 使光學常數具有合理的相符程度,但無法完全地消弭駐波 及丁CU/圖案層(IL)介面之浮污。此外,雖然曾提議甲基甲 氧基丙酸酯(MMP)係適用於溶解TCU聚合物及因應晶邊清 除特徵,但MMP並非一般可接受的微影溶劑。 fcg之概要說明 因此,本發明之一目標係提供適於作為一底塗層組成 物之一種與晶邊清除劑(EBR)相容的熱固化聚合物及熱固 化聚合物層,其可避免或減少前述之缺點。本發明之另一 目標係提供該種熱固化聚合物,以提供以少於約3分鐘之時 間在低於2 5 0 C之溫度固化之一底塗層。本發明進一步的目 標係提供一底塗層,其不溶於表面阻劑之溶劑系統,其減 少反射效應’及其蝕刻率與酚醛樹脂相當。 自下列說明中’可暸解本發明之其他目標、優點與特 性。 本發明係有關一種與晶邊清除劑(EBR)相容的熱固化 聚合物組成物,其包括一種新穎的含羥基聚合物、一種胺 基交聯劑及一種熱酸生成劑。該熱固化聚合物組成物可溶 於一溶劑,及適於在深紫外線微影製程中作為一底塗層。 此外,本發明亦有關一種光微影塗覆基材,其包括: 一基材、位於基材上之一熱固化聚合物組成物、位於熱固 化聚合物組成物上之一種對輻射敏感的阻劑表塗層。更進 一步,本發明亦有關在凸紋結構的製造作用中使用該光微 影塗覆基材之一方法。 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐) ........ • - (請先閲讀背面之注意事項再填寫本頁) •許·f:-(Please read the notes on the back before filling this page). Order 丨 574234 A7 B7 V. Description of the invention (4) (Please read the notes on the back before filling this page) Part of the coating may have a higher degree of crosslinking than other areas of the basecoat. In addition, UV cross-linked exposure equipment is very expensive and is often not included in most photoresist coating equipment due to cost and space constraints. Some primer coatings are crosslinked by heating. However, the problem with these primer coatings is that they require high curing temperatures and long curing times before they can be applied to the top layer. For commercial applicability, the base coat should be cured at temperatures below 250 ° C, and the cure time should be less than 180 seconds. After curing, the base coat should have a high glass transition temperature to withstand subsequent high temperature processing and avoid blending with the photoresist layer. Therefore, it has recently been proposed to use a heat-curable undercoating in a deep ultraviolet lithography process, which uses a composition containing a specific hydroxyl-functional polymer, a thermal acid-generating compound, and an amine cross-linking agent. The hydroxy-functional polymers proposed for use in these heat-curable undercoating compositions are copolymers of biphenyl methacrylate (BPMA) and 2-hydroxyethyl methacrylate (hema). Used in combination with a hot acid generating compound (TAG) and a monoamine cross-linking agent. However, the proposed thermosetting undercoating (TCU) composition faces the following issues: (a) The current 248nm TCU generation is in common crystal edge removal (EBR) solvents such as propylene glycol monomethyl ether acetate (PGMEA), ethyl lactate (EL), ethyl ethoxypropionic acid (EEP), etc.); (b) standing waves, which may be attributed to the base coating and the substrate and The light parameters (η and k) of the pattern layer (IL) do not have the best degree of correspondence; and (c) the stain on the TCU / pattern layer (IL) interface. This paper size applies the Chinese National Standard (CNS) A4 specification (210X297 public love) η 574234 A7 B7 V. Description of the invention (5) In the proposed thermosetting undercoating (TCU) composition, although the optical constant can be promoted to have Reasonable degree of conformity, but it can not completely eliminate the floating of the standing CU / pattern layer (IL) interface. In addition, although it has been proposed that methyl methoxypropionate (MMP) is suitable for dissolving TCU polymers and removing features based on crystal edges, MMP is not a generally acceptable lithographic solvent. Summary of fcg Therefore, it is an object of the present invention to provide a thermosetting polymer and a thermosetting polymer layer which are suitable as a primer coating composition and compatible with crystal edge scavenger (EBR), which can avoid or Reduce the aforementioned disadvantages. Another object of the present invention is to provide such a thermosetting polymer to provide an undercoat layer which cures at a temperature of less than 250 ° C in less than about 3 minutes. A further object of the present invention is to provide a primer coating, which is insoluble in a surface resist solvent system, which reduces the reflection effect 'and its etching rate is comparable to that of a phenolic resin. Other objects, advantages and features of the present invention will be understood from the following description. The present invention relates to a thermosetting polymer composition compatible with crystal edge scavenger (EBR), which includes a novel hydroxyl-containing polymer, an amine cross-linking agent, and a thermal acid generator. The heat-curable polymer composition is soluble in a solvent and is suitable as a primer layer in a deep ultraviolet lithography process. In addition, the present invention also relates to a photolithographic coating substrate comprising: a substrate, a thermosetting polymer composition on the substrate, and a radiation-sensitive resist on the thermosetting polymer composition. Agent surface coating. Furthermore, the present invention also relates to a method for coating the substrate using the photolithography in the manufacture of the relief structure. This paper size applies to China National Standard (CNS) A4 specification (210X297 mm) .....--(Please read the precautions on the back before filling this page)

η 574234 五、發明説明(6 ) 般適用於本發明之聚合物,將具有下列通式化學式 、OfR4〇tR5 ”中R為氫或甲基,R2為被取代或未被取代的C6_Ci4芳基 ^烯酸酯基或C6_CM芳基甲基丙烯酸酯基,其中該取代基 可為苯基、C!_4烷基或Cl_4烷氧基;R3係一經羥基官能化的 烷基丙烯酸酯、甲基丙烯酸酯基或C6_CM芳基;R4係 Ci-C1Q直鏈或分支亞烷基;p為自1至5之一整數,前提在 於[β4〇-]Ρ中之碳原子數目不超過30 ; R5係一 Ci_Ci〇直鏈、 分支或環狀烷基,被取代或未被取代的c6_Ci4芳基或為被 取代或未被取代的CVC1S脂環烴;及⑺為約4〇至7〇,n為約 15至35,及〇為約15至25。較佳的莫耳百分比範圍為 m=60-68,n=15-20及〇=15-20。在上述定義中之芳基較佳為 C6-C1G芳基,更佳為苯基。本發明的聚合物之分子量一般 約 8,0〇〇至 100,000,較佳約 1〇,〇〇〇至24,000。 當施用作為一熱固化底塗層(TCU)材料時,組份m 與0賦予吸光、溶解性及交聯功能。各單體單元係著重於上 列三種功能中之一者,但可能對一種以上的功能具有影 響。該影響係依所用的特定單體單元而定。改變化學式中 由m所代表之早體夏’可變更抗電裝姓刻性與吸光度,盆 將顯著地改變光參數k,而其影響係在於TCU材料的反射作 本紙張尺度適用中國國家標準(CNS) Α4規格(210X297公釐)η 574234 5. Description of the invention (6) Generally applicable to the polymer of the present invention, R will be hydrogen or methyl, and R2 is a substituted or unsubstituted C6_Ci4 aryl group having the following general chemical formula, OfR40tR5. Enoate or C6_CM aryl methacrylate, wherein the substituent may be phenyl, C! _4 alkyl or Cl_4 alkoxy; R3 is a hydroxy-functional alkyl acrylate, methacrylate Or C6_CM aryl; R4 is Ci-C1Q straight or branched alkylene; p is an integer from 1 to 5, provided that the number of carbon atoms in [β4〇-] P does not exceed 30; R5 is a Ci_Ci 〇 linear, branched, or cyclic alkyl, substituted or unsubstituted c6_Ci4 aryl, or substituted or unsubstituted CVC1S alicyclic hydrocarbon; and ⑺ is about 40 to 70, n is about 15 to 35, and 0 are about 15 to 25. The preferred mole percentage ranges are m = 60-68, n = 15-20, and 0 = 15-20. The aryl group in the above definition is preferably C6-C1G aromatic. It is more preferably a phenyl group. The molecular weight of the polymer of the present invention is generally about 8,000 to 100,000, preferably about 10,000 to 24,000. When applied as a heat-curing undercoat layer ( TCU) materials, the components m and 0 impart light absorption, solubility and cross-linking functions. Each monomer unit is focused on one of the three functions listed above, but may have an effect on more than one function. The effect is based on It depends on the specific monomer unit used. Changing the early body Xia 'represented by m in the chemical formula can change the engraving and absorbance of the anti-resistance device, the pot will significantly change the light parameter k, and its effect is due to the reflection of the TCU material The paper size is applicable to China National Standard (CNS) Α4 (210X297 mm)

(請先閲讀背面之注意事項再填寫本頁) 9 574234 A7 B7 五、發明説明(7 ) 用之控制上。可藉由選擇適宜的單體η與〇,而最佳化溶解 度與抗#刻性。交聯率係由化學式中由m所代表之單體量 決定之。一般而言,對於248奈米的微米微影製程而言,折 射率(η)與複合指數(k)之最佳範圍分別約為1.56至1.76及 0.125^0.275 〇 發明之詳細說明與具體例 如本發明,吾等藉由提供聚合物中經設計用以改良溶 解度/吸光度特徵之單體單元,而獲得該等與晶邊清除劑 (EBR)相容的熱固化聚合物。在聚合物中所提供之該等單 體單元,係選自具有下列三個化學式之乙二醇二環戊烯基 甲基丙烯酸酯(EGDCPMA)單體、聯苯基甲基丙烯酸酯 (BPMA)單體單元及羥基苯乙烯(HS): (請先閲讀背面之注意事項再填寫本頁)(Please read the notes on the back before filling this page) 9 574234 A7 B7 V. Description of Invention (7) It is used for control. You can optimize the solubility and resistance to corrosion by choosing the appropriate monomers η and 〇. The crosslinking rate is determined by the amount of monomer represented by m in the chemical formula. In general, for a 248 nm micron lithography process, the optimal ranges of the refractive index (η) and the composite index (k) are about 1.56 to 1.76 and 0.125 ^ 0.275, respectively. The detailed description and specific examples of the invention Invented, we obtain these thermosetting polymers compatible with crystal edge scavenger (EBR) by providing monomer units in the polymer that are designed to improve solubility / absorbance characteristics. The monomer units provided in the polymer are selected from ethylene glycol dicyclopentenyl methacrylate (EGDCPMA) monomers, biphenyl methacrylate (BPMA) having the following three chemical formulas: Monomer unit and hydroxystyrene (HS): (Please read the notes on the back before filling this page)

一般而言,藉由以乙醯苯乙烯(AcSt)作為聚合反應混合物 中之聚合單體,In general, by using AcSt as the polymerization monomer in the polymerization reaction mixture,

OAc AcSt 及在聚合反應發生之後,以甲醇與位於甲醇中之甲醇鈉(如 10%溶液)稀釋該反應混合物以進行甲醇分解作用,而提供 10 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐) 574234 A7 ___ B7_ 五、發明説明(8 ) 羥基苯乙烯(HS)單元。 於PHS中之酚式羥基促成與三聚氰醯胺或脲基類型的 交聯劑之交聯反應;而EGDCPMA中之乙二醇基及phs中之 酚式官能基,可促進在二醇單甲基醚乙酸酯(PGMEA)、乳 酸乙酯(EL)、乙基乙氧基丙酸酯(EEP)等中之溶解度。可藉 由調整聯苯基甲基丙烯酸酯、乙醯苯乙稀與乙二醇官能化 單體之間之比例,經由三聚作用而控制在248奈米之吸光 度。 熱固化聚合物組成物包括一含羥基單體單元。可使用 任一含羥基聚合物,諸如包括羥基苯乙烯、羥基烷基丙烯 酸酯或羥基烷基甲基丙烯酸酯的單體單元之聚合物。適宜 的羥基烷基丙烯酸酯或曱基丙烯酸酯單體單元之實例為2_ 羥基乙基丙烯酸酯或甲基丙烯酸酯、3_羥基丙基丙烯酸酯 或甲基丙烯酸酯、4-羥基丁基丙烯酸酯或甲基丙烯酸酯、 5-經基戊基丙烯酸酯或曱基丙烯酸酯及6-羥基己基丙稀酸 酉曰或甲基丙稀酸酯。雖然亦可使用仲醇羥基與叔醇羥基、 伯醇羥基與仲醇羥基之混合物或伯醇羥基、仲醇羥基與叔 醇基之混合物,該經基丙婦酸酯或甲基丙烯酸酯單體單 疋較佳含有伯醇羥基。仲醇之適宜實例為2_羥基丙基丙烯 酸酯或甲基丙烯酸酯、3-羥基丁基丙烯酸酯或曱基丙烯酸 酯、4-羥基戊基丙烯酸酯或甲基丙烯酸酯、5_羥基己基丙 烯酸酯或曱基丙烯酸酯等。較佳的羥基烷基丙烯酸酯或曱 基丙烯酸酯為2-羥基乙基丙烯酸酯或甲基丙烯酸酯。 含羥基聚合物應包含芳香族單體單元,以平衡阻劑2η 標準(CNS) Α4規格(210X297公釐) ~ΤΓΖ- -------------------------- * - (請先閲讀背面之注意事項再填寫本頁) 許丨 574234 A7 __________B7______ 五、發明説明(9 ) 與k ’較佳者為聯苯基丙稀酸醋或曱基丙稀酸醋、萘基丙稀 酸酿或甲基丙烯酸酯及蒽基丙烯酸酯或曱基丙烯酸酯。此 外,熱固化聚合物組成物亦可進一步包括乙二醇的丙烯酸 酯或甲基丙烯酸酯單體單元,以製造可溶性較高的聚合 物。該單體單元之適宜實例包括乙二醇甲基醚丙烯酸酯與 甲基丙烯酸酯、乙二醇苯基醚丙烯酸酯與曱基丙烯酸酯、 一乙一醇曱基丙婦酸酯與曱基丙稀酸酯等。包含經基苯 乙烯、聯苯基甲基丙烯酸酯與2-(二環戊烯基氧)醚丙烯酸 酷與甲基丙烯酸酯單元之聚合物,其數目平均分子量較佳 約為 8,000 至 40,000,更佳為 ι〇,〇〇〇 至 24,000。 用於底塗層之適宜溶劑包括酮類、醚類與酯類,諸如 2-庚酮、環己酮、丙二醇單乙基醚乙酸酯、丙二醇甲基喊 乙酸酯、乳酸甲酯、乳酸乙酯、甲基3_甲氧基丙酸酯、N_ 甲基-2-吡咯烷酮、乙二醇單異丙基醚、二乙二醇單乙基 醚、二乙二醇二甲基醚等。 本發明係有關一種與晶邊清除劑(EBR)相容的熱固化 聚合物組成物,其可在深紫外線微影製程中用於形成一底 塗層。該熱固化聚合物組成物包含一含羥基聚合物、一胺 基交聯劑及一熱酸生成劑以及溶劑。當加熱該組成物時, 该熱酸生成劑產生一酸,其使多官能胺基交聯劑質子化, 而產生一個非常強的親電子基。該基與含羥基聚合物上之 一羥基反應,而形成一固化交聯聚合物基質。 本發明可使用任一適宜的胺基交聯劑,諸如經甲基化 及/或羥甲基化與醚化三聚氰醯胺、羥甲基化及/或經甲基 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公楚) 12 (請先閱讀背面之注意事項再填寫本頁)OAc AcSt and after the polymerization reaction, the reaction mixture is diluted with methanol and sodium methoxide (such as 10% solution) in methanol to carry out methanol decomposition, and 10 paper sizes are applicable to Chinese National Standard (CNS) A4 specifications ( 210X297 mm) 574234 A7 ___ B7_ 5. Description of the invention (8) Hydroxystyrene (HS) unit. The phenolic hydroxyl group in PHS promotes the cross-linking reaction with melamine or urea-based cross-linking agents; and the ethylene glycol group in EGDCPMA and the phenolic functional group in phs can promote the Solubility in methyl ether acetate (PGMEA), ethyl lactate (EL), ethyl ethoxypropionate (EEP), etc. It is possible to control the absorbance at 248 nanometers by trimerization by adjusting the ratio between biphenyl methacrylate, acetophenone and ethylene glycol functional monomers. The thermosetting polymer composition includes a hydroxyl-containing monomer unit. Any hydroxy-containing polymer may be used, such as a polymer of monomer units including hydroxystyrene, hydroxyalkylacrylate, or hydroxyalkylmethacrylate. Examples of suitable hydroxyalkyl acrylate or fluorenyl acrylate monomer units are 2-hydroxyethyl acrylate or methacrylate, 3-hydroxypropyl acrylate or methacrylate, 4-hydroxybutyl acrylate Or methacrylate, 5-methylpentyl acrylate or fluorenyl acrylate and 6-hydroxyhexyl acrylate or methacrylic acid ester. Although it is also possible to use a secondary alcohol hydroxyl group and a tertiary alcohol hydroxyl group, a mixture of a primary alcohol hydroxyl group and a secondary alcohol hydroxyl group, or a mixture of a primary alcohol hydroxyl group, a secondary alcohol hydroxyl group, and a tertiary alcohol group, the trimethylpropionate or methacrylate monomer Monofluorene preferably contains a primary alcohol hydroxyl group. Suitable examples of secondary alcohols are 2-hydroxypropyl acrylate or methacrylate, 3-hydroxybutyl acrylate or fluorenyl acrylate, 4-hydroxypentyl acrylate or methacrylate, 5-hydroxyhexyl acrylate Esters or fluorenyl acrylates. The preferred hydroxyalkyl acrylate or fluorenyl acrylate is 2-hydroxyethyl acrylate or methacrylate. The hydroxyl-containing polymer should contain aromatic monomer units to balance the resist 2η standard (CNS) A4 specification (210X297 mm) ~ ΤΓZ- ------------------- ------- *-(Please read the precautions on the back before filling this page) Xu 丨 574234 A7 __________B7______ V. Description of the invention (9) and k 'The better is biphenyl acrylic acid vinegar or 曱Acrylic acid, naphthyl acrylic acid or methacrylate and anthracene acrylate or fluorenyl acrylate. In addition, the heat-curable polymer composition may further include an acrylate or methacrylate monomer unit of ethylene glycol to produce a polymer with higher solubility. Suitable examples of the monomer unit include ethylene glycol methyl ether acrylate and methacrylate, ethylene glycol phenyl ether acrylate and fluorenyl acrylate, monoethylene glycol fluorenyl propionate and fluorenyl propylene Esters and so on. The number average molecular weight of the polymer containing acrylstyrene, biphenyl methacrylate, and 2- (dicyclopentenyloxy) ether acrylic acid and methacrylate units is preferably about 8,000 to 40,000, more It is preferably ι〇, 000 to 24,000. Suitable solvents for undercoating include ketones, ethers and esters such as 2-heptanone, cyclohexanone, propylene glycol monoethyl ether acetate, propylene glycol methyl acetate, methyl lactate, lactic acid Ethyl ester, methyl 3-methoxypropionate, N-methyl-2-pyrrolidone, ethylene glycol monoisopropyl ether, diethylene glycol monoethyl ether, diethylene glycol dimethyl ether, and the like. The present invention relates to a heat-curable polymer composition compatible with crystal edge scavenger (EBR), which can be used to form a primer layer in a deep ultraviolet lithography process. The thermosetting polymer composition includes a hydroxyl-containing polymer, a amine-based cross-linking agent, a thermal acid generator, and a solvent. When the composition is heated, the thermal acid generator generates an acid, which protonates the polyfunctional amine cross-linking agent and generates a very strong electrophilic group. This group reacts with a hydroxyl group on the hydroxyl-containing polymer to form a cured crosslinked polymer matrix. The present invention can use any suitable amine-based cross-linking agent, such as methylated and / or methylolated and etherified melamine, methylolated and / or methylated paper. Applicable to Chinese countries Standard (CNS) A4 specification (210X297). 12 (Please read the precautions on the back before filling this page)

574234 A7 B7 五、發明説明(10 ) 化與醚化二聚氰一胺等。較佳的胺基交聯劑具有下列通式 化學式: R7/574234 A7 B7 V. Description of the invention (10) Dimerization and etherification of melamine and the like. A preferred amine-based crosslinking agent has the following general formula: R7 /

N ,ΝγΝ丫Ν Υ /R8 其中Υ為NR1%11,或為被取代或未被取代的c6_c“芳基或 C^-C:8烷基;R6至R11係獨立地為一氫或具化學式_CH2〇H4 -CH2〇R之一基’其中R12係具有約1至&個碳原子之一烧 基。 適宜的三聚氰醯胺交聯劑之實例為甲氧基烷基三聚氰 驢胺’諸如六曱氧基曱基三聚氰醢胺、三甲氧基甲基三聚 氰醯胺、六曱氧基乙基三聚氰醞胺、四曱氧基乙基三聚氰 醢胺、六甲氧基丙基三聚氰醯胺、五甲氧基丙基三聚氰醢 月女專。較佳的的二t氧酿胺父聯劑為來自Sanwa化學公司 (曰本金澤區Cymel 303)之MW100LM三聚氰醯胺交聯劑, 及來自Cytec Industries公司(美國紐澤西州西派特森(躲^ Patterson))之Powderlink 〇 本發明之熱酸生成劑具有下列通式化學式··N, NγΝγΝ Υ / R8 where Υ is NR1% 11, or is a substituted or unsubstituted c6_c "aryl or C ^ -C: 8 alkyl group; R6 to R11 are independently a hydrogen or have a chemical formula _CH2〇H4 -CH2OR is one of the groups wherein R12 is an alkyl group having about 1 to & carbon atoms. An example of a suitable melamine crosslinker is methoxyalkyl melamine Donkey amines such as hexamethylol melamine, trimethoxymethyl melamine, hexamethyl ethyl melamine, tetramethyl ethyl melamine , Hexamethoxypropyl melamine, pentamethoxypropyl melamine, women's college. The preferred di-t-oxyamine conjugate parent agent is from Sanwa Chemical Company (Cymel 303, Kanazawa District, Japan) ) Of MW100LM melamine crosslinker, and Powderlink from Cytec Industries (Patterson, New Jersey, USA). The thermal acid generator of the present invention has the following general chemical formula ...

本紙張尺度適用中國國家標準(CNs) A4規格(210X297公釐) (請先閱讀背面之注意事項再填寫本頁) #丨 参- 五、發明説明(11) 其中R13為被取代或未被取代的烷基、環烷基或芳香 基,其中取代基為函素、烧氧基、芳香基、石肖基或胺基; 而R至R係獨立地為氫、直鏈或分支^至匕烷基、烷氧 基、胺基、烧基胺基、芳香基、稀基、齒素、酿基氧、環 烷基或環化環烷基、芳香族基或雜環基。較佳的熱酸生成 劑為環己基對-甲苯磺酸酯、甲基對-甲苯磺酸酯、冰片基 對甲笨%酸g曰、環己基二異丙基苯石黃酸酯、環己基甲氧 基苯磺酸酯。更佳的熱酸生成劑為環己基對-甲苯磺酸酯、 甲基對·甲苯磺酸酯、及環己基2,4,6•三異丙基苯磺酸酯。 環化一凋係指该環烧基、芳香族基或雜環係與熱酸 生成劑的苯環連接,諸如下列所示之環化芳香族:This paper size applies to Chinese National Standards (CNs) A4 specifications (210X297 mm) (Please read the precautions on the back before filling out this page) # 丨 ref-5. Description of the invention (11) where R13 is substituted or unsubstituted Alkyl, cycloalkyl or aromatic, wherein the substituents are functional groups, alkoxy groups, aromatic groups, stone groups or amine groups; and R to R are independently hydrogen, straight chain or branched to alkyl, Alkoxy, amine, alkylamino, aromatic, dilute, haloyl, alkoxy, cycloalkyl or cyclic cycloalkyl, aromatic or heterocyclic. The preferred thermal acid generators are cyclohexyl p-toluenesulfonate, methyl p-toluenesulfonate, norbornyl p-toluene% acid, cyclohexyl diisopropylbenzoate xanthate, cyclohexyl Methoxybenzenesulfonate. More preferred thermal acid generators are cyclohexyl p-toluenesulfonate, methyl p-toluenesulfonate, and cyclohexyl 2,4,6 • triisopropylbenzenesulfonate. Cyclized-withered refers to the ring, aromatic or heterocyclic system connected to the benzene ring of the thermal acid generator, such as the following cyclized aromatics:

環化芳香族 不應將上述之熱酸生成劑視為光酸生成劑。熱酸生成 劑對於紫外光之敏感度非常差,及其等實際上無法如光酸 生成劑一般地用於光微影製程中。 熱固化聚合物組成物較佳含有75至95重量%(以總固 體物為基礎)之含羥基聚合物,更佳約為82至95重量%。熱 固化聚合物組成物中之胺基交聯劑的含量,較佳約3至2〇 重1 %,更佳約為3至6重量〇/〇。熱固化聚合物組成物中之 熱酸生成劑的含量,較佳約0·5至5重量%,更佳約為2至4 重量%。 本發明之熱固化聚合物組成物在達到約5〇°c之一溫度Cyclic aromatics The above-mentioned thermal acid generators should not be regarded as photoacid generators. Thermal acid generators are very insensitive to ultraviolet light, and they cannot actually be used in photolithography processes as photoacid generators. The heat-curable polymer composition preferably contains 75 to 95% by weight (based on the total solids) of the hydroxyl-containing polymer, and more preferably about 82 to 95% by weight. The content of the amine-based crosslinking agent in the heat-curable polymer composition is preferably about 3 to 20% by weight, and more preferably about 3 to 6% by weight. The content of the thermal acid generator in the heat-curable polymer composition is preferably about 0.5 to 5% by weight, and more preferably about 2 to 4% by weight. The heat-curable polymer composition of the present invention reaches a temperature of about 50 ° C.

574234 A7 B7 五、發明説明(Π) .............卜…:f: *·W (請先閲讀背面之注意事項再填寫本頁) 之前,不應開始進行顯著的交聯作用。在5〇。〇以下之交聯 作用,可能導致在室溫中形成凝膠,其將減少貨架壽命。 當使用熱固化聚合物組成物作為微米微影製程之一底塗層 日才,凝膠形成作用將造成整個基材之塗層不均及線寬變化。 本發明亦有關光微影塗覆基材,其包括:一基材、位 於基材上之一熱固化底塗層組成物、位於熱固化底塗層組 成物上之一具輻射敏感性之阻劑表塗層。該熱固化底塗層 組成物包括熱固化聚合物組成物,其包含一含羥基聚合 物、一胺基交聯劑及經加熱形成一交聯基質之一熱酸生成 劑。上述聚合物中之任一者,皆可作為含羥基聚合物。 .訂_ 本發明進一步有關使用該光微影塗覆基材以製造凸紋 結構之一種方法,其步驟包括:提供該光微影塗覆基材, 將具輻射敏感性之阻劑表塗層以成影像方式暴露於光化輻 射;及藉由以一顯影劑顯影該具輻射敏感性之阻劑表塗 層,在該具輻射敏感性之阻劑表塗層上形成開放區域,而 形成一光阻圖案。此外,可藉由任一適宜方法(諸如氧電漿 餘刻),在經顯影之具輻射敏感性的阻劑表塗層之開放區域 移除熱固化底塗層組成物,以在熱固化底塗層組成物形成 一圖案。 熱固化聚合物組成物之一優點,在於其能以少於約i 8〇 fy之時間在低於2 5 0 C之溫度固化。此項優點使其特別適於 作為阻劑系統之底塗層,對於該阻劑系統之商業適用性而 言,溫度與時間限制均屬重要。熱固化聚合物組成物較佳 係於介於150至250 C之一溫度固化,更佳在介於18〇至22〇574234 A7 B7 V. Description of Invention (Π) ............. b ...: f: * · W (Please read the notes on the back before filling this page) Significant cross-linking effect. At 50. 〇 Cross-linking below may cause gel formation at room temperature, which will reduce shelf life. When the thermosetting polymer composition is used as an undercoating layer in the microlithography process, gel formation will cause uneven coating and line width variation of the entire substrate. The present invention also relates to a photolithographic coating substrate, which includes a substrate, a heat-curable undercoating composition on the substrate, and a radiation-sensitive resist on the heat-curing undercoating composition. Agent surface coating. The heat-curable undercoating composition includes a heat-curable polymer composition including a hydroxyl-containing polymer, an amine-based cross-linking agent, and a thermal acid generator which forms a cross-linked matrix upon heating. Any of the above polymers can be used as a hydroxyl-containing polymer. . Order_ The present invention further relates to a method for coating a substrate using the photolithography to manufacture a relief structure, the steps include: providing the photolithography coating substrate, and coating a radiation-sensitive resist surface Imagewise exposure to actinic radiation; and by developing the radiation-sensitive resist surface coating with a developer, forming an open area on the radiation-sensitive resist surface coating to form a Photoresist pattern. In addition, the heat-curable undercoating composition can be removed by any suitable method (such as an oxygen plasma epitaxy) in the open area of the developed radiation-sensitive resist surface coating, in order to The coating composition forms a pattern. One advantage of the heat-curable polymer composition is that it can be cured at a temperature of less than 250 ° C. in a time of less than about 80 fy. This advantage makes it particularly suitable for use as a primer for a resist system, where both temperature and time limitations are important for the commercial applicability of the resist system. The heat-curable polymer composition is preferably cured at a temperature between 150 and 250 C, and more preferably between 180 and 22 °.

五、發明説明(η ) c之一溫度。固化時間較佳約自3〇至18〇秒,更佳約自⑼ 至120秒。 底主層與具輻射敏感性的組成物均藉由已知的塗覆方 法,均一地施用於一基材。該組成物係溶於一有機溶劑中, 該塗層可藉由旋塗、浸塗、刮塗、層壓、刷塗、喷塗及逆 輥塗覆作用而施用之。塗層厚度一般自約01至10微米以 上;就具輻射敏感性的阻劑之情況而言,更佳約01至15 微米;而就底塗層之情況而言,更佳約03至3 0微米。在 塗覆操作之後,一般藉由固化或乾燥而除去溶劑。 同時適用於底塗層與表層的具輻射敏感性組成物之溶 劑,包括酮類、醚類與酯類,諸如甲基乙基酮、甲基異丙 基酮、2-庚酮、環戊酮、環己酮、2_甲氧基-丨―丙稀乙酸酯、 2-甲氧基乙醇、2-乙氧基乙醇、孓乙氧基乙酸酯、^甲氧基 -2-丙基乙酸酯、ι,2-二甲氧基乙烷乙酸乙酯、乙酸溶纖劑、 丙一醇單乙基醚乙酸酯、丙二醇甲基醚乙酸酯、乳酸甲酯、 乳酸乙酯、丙酮酸甲酯、丙酮酸乙酯、乙基3_甲氧基丙酸 酯、N-甲基-2-吡咯烷酮、ι,4-二噁烷、乙二醇單異丙基醚、 二乙二醇單乙基醚、二乙二醇單甲基醚、二乙二醇二甲基 _專。用於底塗層與表層光阻組成物之溶劑,將參照其等 與底塗層與表層光阻組成物的聚合物樹脂之相容性而加以 遥擇。例如’用於光阻組成物的溶劑及其濃度之選擇,主 要係依在酸不安定性聚合物中所納入的官能性類型、光酸 生成劑及塗覆方法而定。該溶劑應為惰性,應溶於光阻中 之所有組份,應該不和該組份進行任一化學反應,及應可 A4規格(210X297公釐) 本紙張尺度適用中國國家標準(CNS) 574234 A7 I---- B7____ 五、發明説明(14 ) 在塗覆後之乾燥期間再度被除去。 纟發明之具輻射敏感性的阻劑表塗層,可為任一適宜 敏感性之阻劑。其典型地為對於深紫外線區的輕 射敏感之化學放大型阻劑,諸如第5,492,793號與第 5,747,622號美國專利中所論及者。就雙層阻劑系統而言, 胃具__性的阻劑應含㈣,簡護其免於氧電聚姓 刻。 具輻射敏感性的阻劑亦含有一光酸生成(pAG)化合 物。PAG化合物可為任—適宜形式,諸如硫鐵或蛾鐵鹽、 石肖料基1旨、亞胺姐酉旨等。典型地,PAG將以聚合物重 量之1至10%之一量存在。 在光阻組成物中可使用任一適宜的光酸生成劑化合 物。光酸生成化合物係為人熟知的,及包括鏘鹽類(諸如重 氮、硫鏘、氧化硫鏘及碘鏘鹽)及二颯。適宜的光酸生成劑 化合物係揭露於例如第5,558,978號與第5,468,589號美國 專利’其等在此併入本案以為參考資料。 適宜的光酸生成劑之實例為:苯甲醯甲基對-甲基苯磺 酸酯、苯偶姻對-甲苯磺酸酯、α _(對-甲苯磺醯基氧)甲基 苯偶姻、3-(對_曱苯磺醯基氧)_2-羥基-笨基_1β苯基丙基 醚、Ν-(對-十二烷基苯磺醯基氧卜^ —萘二甲醯亞胺及ν_(苯 基-磺酿基氧)-1,8_萘二甲醯亞胺。 /、他適且的化合物係為鄰_确基笨甲盤,其在光化轄射 之際重排而得鄰-硝基苯甲酸,鄰-硝基苯甲醛諸如1_硝基 苯甲醛與2,6_硝基苯甲醛;鹵代醯基苯酮,諸如α,α, ^^翻 ) Μ規格(210X297公釐) -~ΤΓΤ-5. Description of the invention (η) One of the temperatures of c. The curing time is preferably from about 30 to 180 seconds, and more preferably from about ⑼ to 120 seconds. Both the bottom main layer and the radiation-sensitive composition are uniformly applied to a substrate by a known coating method. The composition is dissolved in an organic solvent, and the coating can be applied by spin coating, dip coating, blade coating, lamination, brush coating, spray coating, and reverse roll coating. The coating thickness is generally from about 01 to 10 microns or more; in the case of a radiation-sensitive resist, it is more preferably about 01 to 15 microns; and in the case of an undercoating layer, it is more preferably about 03 to 30. Microns. After the coating operation, the solvent is generally removed by curing or drying. Solvents for radiation-sensitive compositions of the undercoat and surface layers, including ketones, ethers and esters, such as methyl ethyl ketone, methyl isopropyl ketone, 2-heptanone, cyclopentanone , Cyclohexanone, 2-methoxy-propionic acetate, 2-methoxyethanol, 2-ethoxyethanol, ammonium ethoxyacetate, ^ methoxy-2-propyl Acetate, ι, 2-dimethoxyethane ethyl acetate, acetic acid cellosolve, glycerol monoethyl ether acetate, propylene glycol methyl ether acetate, methyl lactate, ethyl lactate, Methyl pyruvate, ethyl pyruvate, ethyl 3-methoxypropionate, N-methyl-2-pyrrolidone, ι, 4-dioxane, ethylene glycol monoisopropyl ether, diethylene glycol Alcohol monoethyl ether, diethylene glycol monomethyl ether, diethylene glycol dimethyl. The solvent used for the undercoat layer and the surface photoresist composition will be remotely selected with reference to the compatibility with the polymer resin of the undercoat layer and the surface photoresist composition. For example, the choice of the solvent used for the photoresist composition and its concentration is mainly determined by the type of functionality incorporated in the acid-labile polymer, the photoacid generator, and the coating method. The solvent should be inert, should be soluble in all components of the photoresist, should not undergo any chemical reaction with the component, and should be A4 size (210X297 mm). The paper size applies to Chinese National Standard (CNS) 574234 A7 I ---- B7____ 5. Description of the invention (14) It is removed again during the drying period after coating. The invention's radiation-sensitive resist surface coating can be any suitable sensitive resist. It is typically a chemically amplified resist that is sensitive to light in the deep ultraviolet region, such as discussed in U.S. Patent Nos. 5,492,793 and 5,747,622. As far as the double-layer resist system is concerned, stomach-type resists should contain tritium to protect them from oxygen and electricity. Radiation-sensitive resists also contain a photoacid-generating (pAG) compound. The PAG compound can be in any suitable form, such as iron sulfide or moth iron salt, stilbene group, imine compound, and the like. Typically, PAG will be present in an amount of 1 to 10% by weight of the polymer. Any appropriate photoacid generator compound can be used in the photoresist composition. Photoacid-generating compounds are well known and include phosphonium salts (such as diazonium, thiosulfurium, thiosulfurium oxide, and iodonium salts) and diphosphonium salts. Suitable photoacid generator compounds are disclosed, for example, in U.S. Patent Nos. 5,558,978 and 5,468,589 ', which are incorporated herein by reference. Examples of suitable photoacid generators are: benzamidine methyl p-toluenesulfonate, benzoin p-toluenesulfonate, α_ (p-toluenesulfonyloxy) methylbenzoin , 3- (p-_benzenebenzenesulfonyloxy) _2-hydroxy-benzyl_1βphenylpropyl ether, N- (p-dodecylbenzenesulfonyloxy) ^-naphthalenedimethylimide And ν_ (phenyl-sulfonyloxy) -1,8_naphthalenedimethylimide. /, Other suitable compounds are o-Cyclylbenzidine, which rearranges at the time of photochemical administration And o-nitrobenzoic acid, o-nitrobenzaldehyde such as 1-nitrobenzaldehyde and 2,6_nitrobenzaldehyde; halogenated fluorenyl benzophenone, such as α, α, ^^) M specifications (210X297 mm)-~ ΤΓΤ-

•、可I (請先閲讀背面之注意事項再填寫本頁) 15 ^,“,“·三氯苯乙酮:及鄰· 574234 五、發明説明( α -三氯苯乙顚]及對_特· 丁基_ 羥基醯基苯酮之磺酸酯,諸‘ ? ^ ^ 夂軸诸如2·羥基二苯甲酮甲磺酸酯及 2,4-羥基二苯甲酮雙(甲磺酸酯)。 適宜的光酸生成劑之其他實例為:漠化三苯基硫鐵、 氣化三苯基硫鏘、碘化三苯基硫鑽、三苯基硫鏘六氟磷酸 酯、三苯基硫鏺六氟砷酸酯、三苯基硫鏘三氟甲磺酸酯、 氣化二苯基乙基硫鏘、氣化苯甲醯甲基二甲基硫鍇、氣化 苯甲醯甲基四氫噻吩鏘、氯化4_硝基苯甲醯甲基四氫噻吩 鏘及氣化4-經基-2_曱基苯基六氫硫代咕喃鏘。 適用於本發明的光酸生成劑之其他實例為:雙(對_甲 苯石黃醯基)重氮甲烷、甲基續醯基對-甲苯石黃醯基重氮甲 烷、1-環·己基磺醯基-1-(1,1-二甲基乙基磺醯基)重氮甲 烧、雙(1,1-二甲基乙基石黃醯基)重氮甲烧、雙(丨-曱基乙基 石黃醯基)重氮甲烧、雙(環己基續醯基)重氮甲烧、1_對_甲苯 石黃醯基-1_環己基魏基重氮曱烧、2-甲基-2-(對-甲苯續醯基) 苯丙顔I、2-甲石黃醢基-2-曱基-4-甲基硫代苯丙嗣、2,4-甲基 -2_(對-甲苯石黃醯基)戊-3-酮、2-重氮基-1-曱基石黃醯基-4-苯 基-2-丁酮、2-(環己基羰基)-2-(對-甲苯磺醯基)丙烷、丨-環 己基磺醯基-1-環己基羰基重氮甲烷、1-重氮基-1-環己基磺 醯基-3,3-二甲基-2-丁酮、1-重氮基-1-(1,1-二甲基乙基磺醯 基)-3,3-二甲基-2-丁酮、1_乙醯基-1-(1-甲基乙基磺醯基) 重氮曱烷、1-重氮基-1-(對-曱苯磺醯基)-3,3-二曱基-2-丁 酮、1-重氮基-1-苯磺醯基-3,3-二甲基-2-丁酮、1-重氮基 -1-(對·曱苯磺醯基)-3·甲基-2-丁酮、環己基2-重氮基-2-(對 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公爱) (請先閲讀背面之注意事項再填寫本頁)• 、 可 I (Please read the notes on the back before filling out this page) 15 ^, "," · Teclophenone: and o · 574234 V. Description of the Invention (α-Trichloroacetophenone) and _ Tetrabutyl hydroxy hydroxy benzophenone sulfonate, '^ ^ 夂 axis such as 2. hydroxybenzophenone mesylate and 2,4-hydroxybenzophenone bis (mesylate) ). Other examples of suitable photoacid generators are: desertified triphenylsulfide, vaporized triphenylsulfide, triphenylsulfide iodide, triphenylsulfide hexafluorophosphate, triphenyl Thiohexafluoroarsinate, triphenylthiosulfan triflate, vaporized diphenylethylsulfanium, vaporized benzamidinemethyldimethylsulfanil, vaporized benzamidinemethyl Tetrahydrothiophene fluorene, 4-nitrobenzyl chloromethyltetrahydrothiophene fluorene, and vaporized 4-acryl-2_fluorenylphenylhexahydrothiosulfuranil. Photoacid generation suitable for use in the present invention Other examples of the agent are: bis (p-toluene xanthanyl) diazomethane, methylcontinyl p-tolylite xanthenyldiazomethane, 1-cyclo · hexylsulfonyl-1- (1,1-dimethyl Ethyl sulfonyl) diazomethane, bis (1,1- Methyl ethyl stilbene) diazomethane, bis (丨 -fluorenylethyl stilbene) diazomethane, bis (cyclohexyl difluorenyl) diazomethane, 1_p-toluene stilbene-1_cyclo Hexyl-Weiyldiazopyrene, 2-methyl-2- (p-toluenesulfenyl) phenylpropanyl I, 2-methythanthenyl-2-fluorenyl-4-methylthiophenylpropionamidine, 2 , 4-methyl-2_ (p-toluene luteinyl) pentan-3-one, 2-diazo-1-fluorenyl luteinyl-4-phenyl-2-butanone, 2- (cyclohexylcarbonyl)- 2- (p-toluenesulfonyl) propane, 丨 -cyclohexylsulfonyl-1-cyclohexylcarbonyldiazomethane, 1-diazo-1-cyclohexylsulfonyl-3,3-dimethyl 2-butanone, 1-diazo-1- (1,1-dimethylethylsulfonyl) -3,3-dimethyl-2-butanone, 1-ethanyl-1- (1-methylethylsulfonyl) diazonium, 1-diazo-1- (p-toluenesulfonyl) -3,3-difluorenyl-2-butanone, 1-diethyl Amino-1-benzenesulfonyl-3,3-dimethyl-2-butanone, 1-diazo-1- (p-fluorenylbenzenesulfonyl) -3 · methyl-2-butanone 、 Cyclohexyl 2-diazo-based 2- (Applicable to Chinese paper (CNS) A4 specification (210X297 public love) for this paper size (Please read first Note the surface to fill out this page)

574234 五、發明説明(i6) -甲本%醯基)乙酸酯、特_丁基2_重氮基·2_苯磺醯基乙酸 酉曰異丙基重氮基-2_甲磺醯基乙酸酯、環己基重氮 基甲磺醯基乙酸醋、特-丁基2-重氮基-2-(對-甲苯磺醯基) ^酸酯、2-硝基苄基對_甲苯磺酸醋、2,6_二硝基苄基對_甲 苯石頁酸酯、2,4-二硝基苄基對_三氟甲基苯磺酸酯。 光生成劑之其他適宜實例為六氟四溴_雙酚A、^,卜 三(3,5·5二溴_4_羥基苯基)乙烷及n_(2,4,6-三溴苯 基)-Ν’-(對-甲苯磺醯基)尿素。 光酸生成劑化合物的典型用量係為聚合物固體重量之 約0.0001至20%,較佳為聚合物固體重量之約1%至1〇%。 在另外的一具體例中,可在光阻組成物中添加鹼添加 劑。鹼添加劑之目的,係在光化輻射照射之前,清除存在 於光阻中之質子。鹼可阻止非所欲的酸之攻擊與切開酸不 安定性基團之作用,藉此增進該阻劑之性能與安定性。鹼 於该組成物中之百分比,應顯著低於光酸生成劑之百分 比,因為在光阻組成物受到照射之後,鹼對於酸不安定性 基團的切開作用之干預則非所欲者。當存在時,鹼化合物 之車父佳範圍係為光酸生成劑重量之約3%至5〇%。驗添加劑 之適宜貫例為2-曱基咪唑、三異丙基胺、4-二曱基胺基〇比 啶、4,4’-二胺基苯基醚、2,4,5-三苯基咪唑及丨,5-重氮基二 環[4.3_0]壬-5-烯。 可在光阻中添加染料,以增加該組成物對於光化輻射 波長之吸光度。該染料必須對於該組成物不構成毒害,及 必須耐受製程條件(包括任一熱處理)。適宜的染料實例為 (請先閲讀背面之注意事項再填寫本頁) 訂丨 •磬_ 574234 A7574234 V. Description of the invention (i6)-methylbenzyl fluorenyl acetate, t-butyl 2-diazo group, 2-benzenesulfonyl acetate, isopropyldiazo group, 2-methylsulfonium Methyl acetate, cyclohexyldiazomethanesulfonyl acetate, t-butyl 2-diazo-2- (p-toluenesulfonyl) ester, 2-nitrobenzyl p-toluene Sulfonic acid vinegar, 2,6-dinitrobenzyl p-toluene phyllate, 2,4-dinitrobenzyl p-trifluoromethylbenzenesulfonate. Other suitable examples of the light generating agent are hexafluorotetrabromo_bisphenol A, ^, butris (3,5 · 5 dibromo_4_hydroxyphenyl) ethane and n_ (2,4,6-tribromobenzene ) -N '-(p-tosylsulfonyl) urea. The photoacid generator compound is typically used in an amount of about 0.0001 to 20% by weight of the polymer solids, preferably about 1% to 10% by weight of the polymer solids. In another specific example, a base additive may be added to the photoresist composition. The purpose of the alkali additive is to remove protons existing in the photoresist before irradiation with actinic radiation. Alkali can prevent the attack of undesired acids and cut the action of acid-labile groups, thereby improving the performance and stability of the resist. The percentage of the base in the composition should be significantly lower than the percentage of the photoacid generator, because after the photoresist composition is irradiated, the intervention of the base to cut the acid-labile groups is undesirable. When present, a preferred range for the car base is about 3% to 50% by weight of the photoacid generator. Suitable examples of test additives are 2-fluorenimidazole, triisopropylamine, 4-difluorenylamino, 0-pyridine, 4,4'-diaminophenyl ether, 2,4,5-triphenyl Imidazole and 丨, 5-diazobicyclo [4.3_0] non-5-ene. A dye may be added to the photoresist to increase the absorbance of the composition for the wavelength of actinic radiation. The dye must not be toxic to the composition and must be resistant to process conditions, including any heat treatment. Examples of suitable dyes are (please read the notes on the back before filling this page) Order 丨 • 磬 574234 A7

五、發明説明(π) 苟酮何生物、I衍生物絲二萘衍生物。其他適用於光阻 、且成物中之特定染料’係述於第5,593,812號美國專利。 光阻組成物可進一步包括習知添加劑,諸如增黏劑與 表面活H劑。嫻熟技藝者將能夠選擇所欲的適宜添加劑及 其濃度。 本t明另外係有關用於在一基材上形成一圖案之一種 方法,其包括下列方法步驟:在該基材上施用包含上述组 成物中之者之一光阻塗層;以成影像方式將該塗層暴 於光化輻射;以一鹼性含水顯影劑處理該塗層直至暴露 幸田射之塗層區域自該基材溶出為止,而在該基材上留下 圖案之光阻結構塗層。 為製造凸紋結構,以成影像方式將具輻射敏感性之^ 劑暴露於光化輻射。‘‘以成影像方式曝光,,一詞,係同時指 經由含有一預定圖案之一光罩之曝光作用;藉由任一適宜 光化輻射源(諸如在經塗覆的基材表面移動之一電腦控制 的雷射光束)之曝光作用;藉由電腦控制的電子束之曝光作 用,及藉由X光或紫外光通過一對應光罩之曝光作用。 〜像方式之曝光作用在阻劑的曝光區域產生酸,其切開 不女疋性基團而產生一水溶性聚合物。典型地,在成影体 方式之曝光作用之後,將對於化學放大型阻劑施予曝光後 力熱處理,其貫際上完成光酸生成劑與酸不安定性基團 之反應。 在該材料之成影像方式的曝光作用與任一熱處理之 後,典型地藉由溶於一含水顯影劑,而除去表層具輻射敏 露 於 具 阻 成 酸 像V. Description of the invention (π) Goubenone, I derivative Silk perylene derivatives. Other specific dyes suitable for use in photoresists are described in U.S. Patent No. 5,593,812. The photoresist composition may further include conventional additives such as a tackifier and a surface active agent. Skilled artisans will be able to select the appropriate additives and their concentrations as desired. The present invention also relates to a method for forming a pattern on a substrate, which comprises the following method steps: applying a photoresist coating comprising one of the above-mentioned compositions on the substrate; The coating was exposed to actinic radiation; the coating was treated with an alkaline aqueous developer until the exposed area of the coating of Kota Shot was dissolved from the substrate, and a patterned photoresist structure was left on the substrate Floor. In order to produce a relief structure, the radiation-sensitive agent is exposed to actinic radiation in an imagewise manner. '' Photographic exposure, '' the term, also refers to exposure through a mask containing a predetermined pattern; by any suitable source of actinic radiation, such as moving one on the surface of a coated substrate Computer controlled laser beam) exposure; computer controlled electron beam exposure; and X-ray or ultraviolet light exposure through a corresponding mask. ~ Exposure in the manner described above generates an acid in the exposed area of the resist, which cuts off non-sexual groups to produce a water-soluble polymer. Typically, the chemical amplification type resist is subjected to a post-exposure heat treatment after the exposure in the image forming mode, which completes the reaction between the photoacid generator and the acid-labile group. After the exposure of the material into an image and any heat treatment, the surface layer is typically radiation-sensitive by dissolving in an aqueous developer and exposed to a resistive acid image.

(請先閲讀背面之注意事項再填寫本頁) 訂| 18 五、發明説明 =劑=Γ。特定顯影劑之選擇,係依光阻的類 而定。顯影劑;包聚合物樹脂或光解產物之性質 或其混合物。特佳2旦水溶液,在其中已添加有機溶劑 包括驗金含水的鹼性溶液。其等例如 特 +戈派氫氧化物與碳酸鹽之水溶液, 之水^四貌基錢(更佳為氯氧化四甲基録(⑽網) ‘之右為所欲者,亦可在該等溶 的潤濕劑及/或有機溶劑。 人用於上述雙層方法中之具輻射敏感性的阻劑,典型地 2有石^或在顯影之後在阻劑中納入石夕。在具輕射敏感性 ’阻,成圖案之後,將基材置於含氧之電槳㈣環境 中,藉此移除無阻劑保護區域之底塗層。當暴露於氧電漿 時’在具㈣敏感性的阻劑中所納人之石夕將形成二氧化 石夕,而保護阻劑免於姓刻作用,藉此在底塗層形成凸紋結 構。 在氧電漿之後,具有雙層凸紋結構之基材通常進行至 y 個進一步的處理步驟,其改變位於未受雙層塗層覆蓋 的區域之基材。典型地,.該步驟可為植入摻質、在基材上 澱積另一物質或蝕刻該基材。在該步驟之後,通常藉由氟/ 氧電製餘刻而自該基材移除阻劑塗層。 前所提及包含聯苯基甲基丙烯酸酯(BPMA)與2-羥基 乙基甲基丙嫦酸酯(HEMA)之共聚物,係不溶於與晶邊清除 劑(EBR)相容的大部分溶劑及微影溶劑(諸如丙二醇單甲基 醚乙酸酯(PGMEA)、乳酸乙酯(EL)等)中。HEMA之經基係 574234 A7 B7 五、發明説明(19) 作為交聯官能基。在本發明之較佳的三元共聚物中,亦即 包含聯苯基甲基丙烯酸酯(BPMA)、乙醯苯乙烯(AcSt)(其進 一步進行甲醇分解而成為對-羥基苯乙烯(HS))及乙二醇二 環戊烯基甲基丙烯酸酯(EGDCPMA)之三元共聚物,該聚合 物中之BPMA單元有助於最佳化底塗層的η與k數值。該聚 合物中之PHS單元除了在吸光度與抗蝕刻性方面所扮演的 角色之外,尚具有二種功能。其提供用於交聯之官能度, 其效用優於HEMA中之羥基官能度。再者,因為PHS的乙 醯氧基苯乙醯先質以無規方式與BPMA共聚,而改變在聚 合物微結構中之BPMA嵌段性質及增進該聚合物之溶解 度。第三個單體一具有至少一個醚鍵之酯類,其增進聚合 物的溶解度及增加聚合物的抗蝕刻性。該聚合物系統係與 晶邊清除劑(EBR)溶劑相容。 本發明係有關一聚合物組成物,其包含可高度溶於與 晶邊清除劑(EBR)相容的所有溶劑之一熱交聯基。本發明 提供一熱固化聚合物組成物,其適於作為深紫外線微影製 程之底塗層。該底塗層聚合物能以少於約2分鐘之時間在低 於220°C之溫度固化。該,底塗層不溶於表層阻劑的溶劑系 統,及其蝕刻率與酚醛樹脂相當。可藉由最佳化該組成物 以減少圖案層/底塗層介面之反射作用,而調整本發明的底 塗層聚合物組成物之折射率(η與k),及可藉由調整配方物 中之交聯劑量而完全除去浮污與底腳。 本發明係由下列實例加以說明但不侷限於該等實例, 其中之部份與百分比係以重量為基礎,除非另外說明之。 本紙張尺度適用中國國家標準(CNS) Α4規格(210X297公釐) 22 (請先閲讀背面之注意事項再填寫本頁)(Please read the notes on the back before filling out this page) Order | 18 V. Description of the invention = 剂 = Γ. The choice of a particular developer depends on the type of photoresist. Developer; properties of polymer resins or photolysis products, or mixtures thereof. Particularly preferred is a 2 denier aqueous solution to which organic solvents have been added, including aqueous alkaline solutions for gold testing. For example, the aqueous solution of Te + Gepai hydroxide and carbonate, the water ^ tetramethyl group (more preferably tetramethyl oxychloride (⑽ 网)) The right is what you want, but also in these Soluble wetting agents and / or organic solvents. Radiation-sensitive resists that are used by humans in the above-mentioned two-layer method, typically 2 have stone ^ or include stone eve in the resist after development. Sensitivity. After patterning, the substrate is placed in an oxygen-containing electric paddle environment to remove the primer coating on the unprotected area. When exposed to oxygen plasma, The stone of the people contained in the resist will form the stone of the dioxide, and the resist is protected from the engraving effect, thereby forming a relief structure in the undercoat layer. After the oxygen plasma, it has a double-layer relief structure. The substrate is usually subjected to y further processing steps, which change the substrate located in an area not covered by the double-layer coating. Typically, this step may be implanting a dopant and depositing another substance on the substrate Or etching the substrate. After this step, the resist coating is usually removed from the substrate by fluorine / oxygen electrocuting. The previously mentioned copolymers containing biphenyl methacrylate (BPMA) and 2-hydroxyethyl methylpropionate (HEMA) are insoluble in large compatible with crystal edge scavenger (EBR) Part of the solvents and lithographic solvents (such as propylene glycol monomethyl ether acetate (PGMEA), ethyl lactate (EL), etc.). The warp system of HEMA is 574234 A7 B7 V. Description of the invention (19) As a cross-linking functional group In the preferred terpolymer of the present invention, that is, biphenyl methacrylate (BPMA) and acetyl styrene (AcSt) (which is further subjected to methanol decomposition to become p-hydroxystyrene (HS )) And a terpolymer of ethylene glycol dicyclopentenyl methacrylate (EGDCPMA). The BPMA unit in the polymer helps to optimize the η and k values of the undercoat layer. In addition to its role in absorbance and etch resistance, the PHS unit has two functions. It provides functionality for cross-linking, and its utility is better than the hydroxyl functionality in HEMA. Furthermore, because of PHS The ethoxylated acetophenone precursor was copolymerized with BPMA in a random manner, which changed the polymer microstructure. BPMA block properties in the structure and improve the solubility of the polymer. The third monomer-an ester with at least one ether bond, which enhances the solubility of the polymer and increases the polymer's resistance to etching. The polymer system is Compatible with crystal edge scavenger (EBR) solvent. The present invention relates to a polymer composition containing a thermal cross-linking group which is highly soluble in all solvents compatible with crystal edge scavenger (EBR). The present invention A heat-curable polymer composition is provided, which is suitable as an undercoat for deep ultraviolet lithography. The undercoat polymer can be cured at a temperature below 220 ° C in less than about 2 minutes. The primer system is insoluble in the surface resist solvent system, and its etching rate is equivalent to that of phenolic resin. The primer can be adjusted by optimizing the composition to reduce the reflection effect of the pattern layer / primer interface. The refractive index (η and k) of the polymer composition of the layer, and the stains and feet can be completely removed by adjusting the crosslinking amount in the formulation. The invention is illustrated by, but not limited to, the following examples, parts and percentages of which are based on weight unless otherwise specified. This paper size applies to China National Standard (CNS) Α4 specification (210X297 mm) 22 (Please read the precautions on the back before filling this page)

574234 A7 __ B7_ 五、發明説明(20) 如下敘述藉由在四氫呋喃中之聚合作用而製得本發明 聚合物之通用合成程序。 在氮氣流下,在配備有一迴流冷凝器與一氣體入口之 一圓底燒瓶中,將單體、引發劑與鏈轉移劑之混合物溶於 150克四氫呋喃中。在攪拌下,將該混合物加熱至65°C,及 在氮氣下在該同一溫度維持20小時。之後,將反應混合物 冷卻至室’溫,及取一整份進行凝膠滲透層析(GPC)。以60 毫升甲醇稀釋該反應混合物,及於其中添加位於甲醇中的 甲醇鈉(10%溶液)以進行甲醇分解作用。該混合物進行迴 流,藉由進行共沸蒸餾作用4小時及使用狄恩-史達克 (Dean-Stark)截流器而持續地移除副產物乙酸曱酯。在冷卻 至室溫之後,在混合物中添加20克Amberlyst 15樹脂(自羅 門哈斯(Rohm & Haas)公司可取得之離子交換樹脂),以進 行鈉之離子交換及攪拌3小時。過濾該樹脂,及將該溶液緩 慢地倒入4公升的蒸餾水中。藉由過濾作用分離固態聚合 物,及再度溶於300毫升四氫呋喃中。該聚合物沈澱於2公 升異丙醇中。在過濾之後,該固體物在真空下於60°C乾燥 24小時。 所用的通用分析程序如下。 分子量與分子量分布之測量,係使用華特斯(Waters) 公司的液態層析(折射率偵測作用、GPC V軟體 Millennium),其配備有下列P-10、7·8 X 250毫米管柱: 10-4A、500A與50A(來自Phenomena公司)及四氫口夫喃洗提 液。熱分解測量(TGA)係以柏金-愛默(Perkin-Elmer)熱解重 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐) 23 (請先閲讀背面之注意事項再填寫本頁) .# 574234 A7 __ B7___ 五、發明説明(21 ) 量分析器進行之。使用加熱速度為1(TC/分鐘之柏金_愛默 (Perkin-Elmer) Pyris 1差示掃描量熱計,測量聚合物的玻璃 轉化溫度(Tg)。使用布魯克(Bruker) 400 MHz NMR-光譜 儀,藉由13C NMR而分析聚合物的結構與組成。 第1例聚合物 依據上述的通用程序,將單體[4-聯苯基曱基丙烯酸酯 (72.37克,0.303莫耳)、乙醯氧基苯乙烯(10·56克,〇 〇65莫 耳)與乙二醇二環戊烯基醚甲基丙烯酸酯(17.07克,〇.〇65莫 耳)]、引發劑VAZO 67(6.00克,6.0重量%相對於單體)及鏈 轉移劑1_十二烷硫羥(1.80克,30重量%相對於引發劑)之混 合物加以聚合。轉酯基作用使用4·〇克甲醇鈉溶液。產量: 91.3 克,94%。Mw4 14,666 ; MW/MJ 1.92。在 310。〇具有 5%重量損失,玻璃轉化溫度(Tg)為128°C。聚合物組成(莫 耳%) : 69%聯苯基甲基丙稀酸酯單元;ι6%經基苯乙稀單 元;及15%乙二醇二環戊烯基醚曱基丙烯酸酯單元。 第2例聚合物 依據上述的通用程序,將單體[4_聯苯基甲基丙烯酸酯 (62.74克,0.263莫耳)、乙醯氧基苯乙烯(ι4·23克,莫 耳)與乙二醇二環戊烯基醚甲基丙烯酸酯(23 〇3克,〇 〇87莫 耳)]、引發劑乂八2〇 67(6.00克,0.0重量%相對於單體)及鏈 轉移劑1-十二烷硫羥(1·80克,30重量%相對於引發劑)之混 合物加以聚合。轉酯基作用使用5_〇克曱醇鈉溶液。產量: 91_5克,95%。Μ413,715 ;吣紙為197。熱分解測量 (TGA):在305°C具有5%重量損失,玻璃轉化溫度(Tg)為124 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐) 24 (請先閲讀背面之注意事項再填寫本頁) •訂· 豢| 574234 A7 __ B7_ 五、發明説明(22) °c。聚合物:組成(莫耳%) : 60%聯苯基甲基丙烯酸酯單元; 19%羥基苯乙烯單元;及21%乙二醇二環戊烯基醚甲基丙 烯酸酯單元。 第3例聚合物 依據上述的通用程序,將單體[4_聯苯基甲基丙烯酸酯 (54.09克’ 0.227莫耳)、乙醯氧基苯乙烯(22.09克,0.136莫 耳)與乙二醇二環戊烯基醚甲基丙烯酸酯(23.82克,〇.〇9莫 耳)]、引發劑\^\20 67(6.00克,6.0重量0/〇相對於單體)及鏈 轉移劑1-十二烷硫羥(1·8〇克,3〇重量%相對於引發劑)之混 合物加以聚合。轉酯基作用使用6 · 〇克甲醇納溶液。產量: 85.5克,91%。1為11,262/1.88 ; Mw/Mn為 1.88。熱分解測 罝(TGA):在300°C具有5%重量損失,玻璃轉化溫度(Tg) 為118°C。聚合物組成(莫耳: 51%聯苯基曱基丙烯酸酯 單元;28%經基苯乙烯單元;及21%乙二醇二環戊烯基醚 甲基丙烯酸酯單元。 第4例聚合物 在氮氣流下,在配備有一迴流冷凝器與一氣體入口之 一個500毫升圓底燒瓶中,將單體[4_聯苯基曱基丙烯酸酯 (BPMA)(37.74克,0.158莫耳)、乙醯氧基苯乙烯(8 54克, 0.0527莫耳)與乙二醇二環戊烯基醚甲基丙烯酸酯(1382 克,0.0527莫耳)]及鏈轉移劑^十二烷硫羥(1〇8克,引發劑 之30重量%)之混合物,溶於83 6克丙二醇單曱基醚乙酸酯 (PGMEA)(40%固體物)中。將混合物加熱至7〇π。然後, 以15分鐘之時間在該反應混合物中緩慢添加位於6.4克 本紙張尺度適用中國國家標準(CNS) Α4規格(210X297公楚) -25 - (請先閲讀背面之注意事項再填寫本頁) 、τ 574234 A7 ___B7 五、發明説明(23) (請先閲讀背面之注意事項再填寫本頁) PGMEA中之VAZ0 67® [自由基引發劑,杜邦(Dup〇nt)公司 產品,2,2 -偶氮一(2-甲基丁万)](3·6克,所用單體之6重量 %)’及於氮氣下擾拌24小時。使用設定於254奈米之紫外 線偵測器,藉由GPC偵測ΒΡΜΑ之消失。在24小時之後, ΒΡΜΑ小於0 · 1 %。將反應混合物冷卻至室溫。然後在燒瓶 中添加位於甲醇中的2·0克甲醇鈉(1 〇%溶液)與$〇毫升甲 醇。該反應混合物進行迴流3小時,及使用狄恩—史達克 (Dean-Stark)截流器而藉由共沸蒸餾作用除去約25毫升甲 醇。將溶液冷卻至室溫’及添加10·0克Amberlyst 1 5樹脂。 攪拌該反應混合物2小時,及藉由過濾作用分離該樹脂。在 真空下及低於60 C之温度,將溶液蒸餾剩下一半的體積, 以除去甲醇與副產物丙二醇甲基_。最後,藉由在其中添 加PGMEA而製得30重量%的固體物溶液。為15,700 ; Mw/Mn為1.95 ;及聚合物組成(莫耳%) : 59%聯苯基甲基丙 稀酸酯單元;20%經基苯乙稀單元;及21%乙二醇二環戊 烯基醚曱基丙烯酸酯單元。 第5例聚合物 在氮氣流下’在配備有一迴流冷凝器與一氣體入口之 一個500毫升圓底燒瓶中,將單體[4-聯苯基甲基丙烯酸酯 (BPMA)(37.74克,0.158莫耳)、乙醯氧基苯乙烯(8.54克, 0.0527莫耳)與乙二醇二環戊烯基醚甲基丙烯酸酯(1382 克,0.0527莫耳)]及鏈轉移劑^十二烷硫羥〇 〇8克,引發劑 之30重量%)之混合物,溶於83 6克丙二醇單甲基醚乙酸酯 (PGMEA)(40%固體物)中。將混合物加熱至7(rc。然後, 本紙張尺度適用中國國家標準(CNS) A4規格公爱) -26 - 574234 A7 ___B7_ 五、發明説明(24) 以15分鐘之時間在該反應混合物中緩慢添加位於6.4克 PGMEA中之VAZ0 67® [自由基引發劑,杜邦(Dupont)公司 產品’ 2,2、偶氮二(2-甲基丁万)](3.6克,所用單體之6重量 %)。然後,將溫度逐漸增加至80°C,及於氮氣下攪拌4小 時。使用設定於254奈米之紫外線偵測器,藉由GPC偵測 BPMA之消失。在3小時之後,BPMA小於0.1〇/〇。將混合物 冷卻至室溫。然後在燒瓶中添加位於甲醇中的2〇克甲醇鈉 (10%溶液)與50毫升曱醇。該反應混合物進行迴流3小時, 及使用狄恩·史達克(Dean-Stark)截流器而藉由共(弗蒸顧作 用除去約25毫升甲醇。將溶液冷卻至室溫,及添加1〇 〇克 Amberlyst 15樹脂。攪拌該反應混合物2小時,及藉由過濾 作用分離該樹脂。在真空下及低於6〇。(:之溫度,將溶液蒸 餾剩下一半的體積,以除去甲醇與副產物丙二醇曱基醚。 最後’藉由在其中添加PGMEA而製得30重量%的固體物溶 液。……為11,〇44 ; Mw/Mn為2.11 ;及聚合物組成(莫耳%): 60%聯苯基甲基丙烯酸酯單元;19〇/〇羥基苯乙烯單元;及 21%乙一醇二環戊稀基崎甲基丙婦酸酉旨單元。 在下列實例中配製第至5例聚合物之底塗層配方物。 第1例底塗層 將14.02克第1例聚合物、4.0克]\4\^1001^(三聚氰醯胺 父聯劑’來自日本金澤區Sanwa化學公司)溶液(位於丙二醇 單曱基醚乙酸酯(PGMEA)中之20重量%溶液)及1 _875克環 己基曱苯磺酸化熱酸生成劑溶液(位於PGMEA中之20重量 %溶液)混合,及溶於80.丨克丙二醇單甲基醚乙酸酯 本紙張尺度適用中國國家標準(CNS) Α4規格(21〇χ297公釐) 27 (請先閲讀背面之注意事項再填寫本頁) :?τ— 蒙, 574234 A7 ____B7_ 五、發明説明(25) (PGMEA)中,而得1〇〇克底塗層溶液(總共15重量%固體 物)。將該混合物(聚合物/交聯劑/TAG二93.5/4.0/2.5%)滾動 過夜,及將該底塗層溶液過濾通過0.1微米鐵氟龍過濾器二 次0 第2例底塗層 將14.02克第2例聚合物、4.0克MW100LM交聯劑溶液 (位於PGMEA中之20重量%溶液)及1.875克環己基甲苯磺 酸化熱酸生成劑溶液(位於PGMEA中之20重量%溶液)混 合,及溶於80.1克丙二醇單曱基醚乙酸酯(PGMEA)中,而 得100克底塗層溶液(總共15重量%固體物)。將該混合物(聚 合物/交聯劑/TAG=93.5/4.0/2.5%)滾動過夜,及將該底塗層 溶液過濾通過0.1微米鐵氟龍過濾器二次。 第3例底塗層 將14.02克第3例聚合物、4.0克MW100LM交聯劑溶液 (位於PGMEA中之20重量%溶液)及1.875克環己基甲苯磺 酸化熱酸生成劑溶液(位於PGMEA中之20重量%溶液)混 合,及溶於80.1克丙二醇單曱基醚乙酸酯(PGMEA)中,而 得100克底塗層溶液(總共.15重量%固體物)。將該混合物(聚 合物/交聯劑/TAG二93.5/4.0/2.5%)滾動過夜,及將該底塗層 溶液過濾通過0.1微米鐵氟龍過濾器二次。 第4例底塗層 將46.75克第4例聚合物、4.0克MW100LM交聯劑溶液 (位於PGMEA中之20重量%溶液)及1.875克環己基甲笨石黃 酸化熱酸生成劑溶液(位於PGMEA中之20重量%溶液)混 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐) -28 - (請先閲讀背面之注意事項再填寫本頁) -·訂- 574234 A7 B7 五、發明説明(26) 合,及溶於47.4克丙二醇單甲基醚乙酸酯(PGMEA)中,而 得100克底塗層溶液(總共15重量%固體物)。將該混合物(聚 合物/交聯劑/TAG=93.5/4.0/2.5%)滾動過夜,及將該底塗層 溶液過濾通過0.1微米鐵氟龍過濾器二次。 第5例底塗層 將46.75克第5例聚合物、4.0克MW100LM交聯劑溶液 (位於PGMEA中之20重量%溶液)及1.875克環己基甲苯磺 酸化熱酸生成劑溶液(位於PGMEA中之20重量%溶液)混 合,及溶於47.4克丙二醇單甲基醚乙酸酯(PGMEA)中,而 得100克底塗層溶液(總共15重量%固體物)。將該混合物(聚 合物/交聯劑/TAG=93.5/4.0/2.5%)滾動過夜,及將該底塗層 溶液過濾通過0.1微米鐵氟龍過濾器二次。 第6例底塗層 將14.33克第1例聚合物、2.0克1^冒1001^^4交聯劑溶液 (位於PGMEA中之20重量%溶液)及1.875克環己基甲苯磺 酸化熱酸生成劑溶液(位於PGMEA中之20重量%溶液)混 合,及溶於81.8克丙二醇單甲基醚乙酸酯(PGMEA)中,而 得100克底塗層溶液(總共,15重量%固體物)。將該混合物(聚 合物/交聯劑/TAG=95.5/2.0/2.5%)滾動過夜,及將該底塗層 溶液過濾通過0.1微米鐵氟龍過濾器二次。 第7例底塗層 將14.18克第1例聚合物、3.0克MW100LM交聯劑溶液 (位於PGMEA中之20重量%溶液)及1.875克環己基甲苯石黃 酸化熱酸生成劑溶液(位於PGMEA中之20重量%溶液)混 29 (請先閲讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐) 574234 A7 __ B7_ 五、發明説明(27 ) 合,及溶於81.〇克丙二醇單曱基醚乙酸酯(PGMEA)中,而 得100克底塗層溶液(總共15重量%固體物)。將該混合物(聚 合物/交聯劑/TAG=94.5/3.0/2.5%)滾動過夜,及將該底塗層 溶液過濾通過0.1微米鐵氟龍過濾器二次。 第8例底塗層 將13.83克第1例聚合物、6.0克]\4〜1001^]^交聯劑溶液 (位於PGMEA中之20重量%溶液)及1.875克環己基甲苯石黃 酸化熱酸生成劑溶液(位於PGMEA中之20重量%溶液)混 合,及溶於78.4克丙二醇單甲基醚乙酸酯(PGMEA)中,而 得100克底塗層溶液(總共15重量%固體物)。將該混合物(聚 合物/交聯劑/TAG=91.5/6.0/2.5%)滾動過夜,及將該底塗層 溶液過濾通過0.1微米鐵氟龍過濾器二次。 第9例底塗層 將13.13克第1例聚合物、10.0克]^11^1001^]^交聯劑溶液 (位於PGMEA中之20重量%溶液)及1.875克環己基甲苯磺 酸化熱酸生成劑溶液(位於PGMEA中之20重量%溶液)混 合,及溶於75.0克丙二醇單甲基醚乙酸酯(PGMEA)中,而 得100克底塗層溶液(總共.15重量%固體物)。將該混合物(聚 合物/交聯劑/TAG=87.5/10.0/2.5%)滾動過夜,及將該底塗 層溶液過濾通過0.1微米鐵氟龍過濾器二次。 第10例底塗層 將14.02克第1例聚合物、4.0克Powderlink交聯劑溶液 (位於PGMEA中之20重量%溶液)及1.875克環己基甲苯磺 酸化熱酸生成劑溶液(位於PGMEA中之20重量%溶液)混 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐) 30 (請先閱讀背面之注意事項再填寫本頁) -訂- ,0m, 574234 A7 _ B7___ 五、發明説明(28 ) 合,及溶於80_1克丙二醇單甲基醚乙酸酯(PGMEA)中,而 得100克底塗層溶液(總共15重量%固體物)。將該混合物(聚 合物/交聯劑/TAG=93.5/4.0/2.5%)滾動過夜,及將該底塗層 溶液過濾通過0.1微米鐵氟龍過濾器二次。 第11例底塗層 將14.10克第1例聚合物、4.0克?4^^1001^1^交聯劑溶液 (位於PGMEA中之20重量%溶液)及1.5克環己基甲苯磺酸 化熱酸生成劑溶液(位於PGMEA中之20重量%溶液)混合, 及溶於80.4克丙二醇單甲基醚乙酸酯(PGMEA)中,而得100 克底塗層溶液(總共15重量%固體物)。將該混合物(聚合物/ 交聯劑/TAG=94.0/4.0/2.0%)滾動過夜,及將該底塗層溶液 過濾通過0.1微米鐵氟龍過濾器二次。 第12例底塗層 將13.95克第1例聚合物、4·0克MW100LM交聯劑溶液 (位於PGMEA中之20重量%溶液)及2.25克環己基甲苯磺酸 化熱酸生成劑溶液(位於PGMEA中之20重量%溶液)混合, 及溶於79.8克丙二醇單曱基醚乙酸酯(PGMEA)中,而得100 克底塗層溶液(總共15重量%固體物)。將該混合物(聚合物/ 交聯劑/TAG=93.0/4.0/3.0%)滾動過夜,及將該底塗層溶液 過濾通過0.1微米鐵氟龍過濾器二次。 第13例底塗層 將13.80克第1例聚合物、4.0克MW100LM交聯劑溶液 (位於PGMEA中之20重量。/〇溶液)及3.0克環己基甲苯石黃酸 化熱酸生成劑溶液(位於PGMEA中之20重量%溶液)混合, 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐) -31 - (請先閲讀背面之注意事項再填寫本頁) ·訂— 574234 A7 B7 五、發明説明(29) 及溶於79_2克丙二醇單甲基醚乙酸酯(PGMEA)中,而得100 克底塗層溶液(總共15重量%固體物)。將該混合物(聚合物/ 交聯劑/TAG=93.0/4.0/4.0%)滾動過夜,及將該底塗層溶液 過濾通過0.1微米鐵氟龍過濾器二次。 第14例底塗層 將13.65克第1例聚合物、4.0克厘\^1001^河交聯劑溶液 (位於PGMEA中之20重量%溶液)及3.75克環己基甲苯磺酸 化熱酸生成劑溶液(位於PGMEA中之20重量%溶液)混合, 及溶於78.6克丙二醇單曱基醚乙酸酯(PGMEA)中,而得100 克底塗層溶液(總共15重量%固體物)。將該混合物(聚合物/ 交聯劑/TAG=91.0/4.0/5.0%)滾動過夜,及將該底塗層溶液 過濾通過0.1微米鐵氟龍過濾器二次。 用於微影試驗底塗層配方物之通用程序如下。 在一石夕晶圓上旋塗來自一底塗層配方物之底塗層,及 於205°C烘烤90秒,而得0.50微米厚的一薄膜。在底塗層上 旋塗圖案層(TIS2000,來自Arch化學公司(美國康乃迪克州 諾華克(Norwalk))之一化學放大型雙層阻劑),及於135°C烘 烤1分鐘,而得0.25微米厚.的一薄膜。然後使用Ultratech 248 奈米步進機,將經塗覆的晶圓以成影像方式曝光。在曝光 之後,該晶圓於125°C烘烤1分鐘,及於0.262 N含水氫氧化 四甲基銨(TMAH)中混拌顯影60秒。以去離子水清洗晶圓, 及予以旋乾。藉由掃描式電子顯微法(SEM)分析圖案。來 自SEM之影像顯示該雙層阻劑可解析小至0.13微米之輪 廓。 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐) 32 (請先閲讀背面之注意事項再填寫本頁) -、τ 574234 A7B7 五、發明説明(3Q) 本發明妁TIS-2000組成物之一般微影性能為: 光速度範圍:30至40 (mJ/cm2); 解析度範圍:0.120至0.130 (微米);及 焦點深度:0.70至1.0 (0.130微米輪廓)。 該組成物之微影試驗結果,係示於下列第1表中。 第1表:底塗層配方物之配方與圖案品質評估摘要 實例 聚合物 聚合物 (克) 交聯劑 交聯劑 (克) 20wt°/〇 固體物 熱酸生成劑 (克) 20wt% 固體物 PGMEA (克) 解析度 分離線 (0.13微米) 光阻/底塗層(DL/UL) 介面品質 1 聚合物1 14.02 MW100 LM 4.0 1.875 80.1 在IL/UL介面無底腳 2 聚合物2 14.02 MW100 LM 4.0 1.875 80.1 在IL/UL介面無底腳 3 聚合物3 14.02 MW100 LM 4.0 1.875 80.1 在EL/UL介面有浮污 4 聚合物4 14.02 MW100 LM 4.0 1.875 80.1 在EL/UL介面無底腳 5 聚合物5 14.02 MW100 LM 4.0 1.875 80.1 在IL/UL介面無底腳 6 聚合物1 14.3 MW100 LM 2.0 1.875 81.8 線圖案潰散 7 聚合物1 14.18 MW100 LM 3.0 1.875 81.0 底腳 8 聚合物1 13.83 MW100· LM 6.0 1.875 78.4 在IL/UL介面無底腳 9 聚合物1 13.13 MW100 LM 10.0 1.875 75.0 底腳 10 聚合物1 14.02 Powder- link 4.0 1.875 80.1 在IL/UL介面無底腳 11 聚合物1 14.10 MW 100 LM 4.0 1.5 80.4 在IL/UL介面無底腳 12 聚合物1 13.95 MW 100 LM 4.0 2.5 79.8 在IL/UL介面無底腳 13 聚合物1 13.80 MW100 LM 4.0 3.0 79.2 在IL/UL介面無底腳 14 聚合物1 13.65 MW 100 LM 4.0 3.75 78.6 T型頂 33 (請先閲讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐) 574234 A7 ____B7 _ 五、發明説明(31) 掃描式電子顯微法(SEM)的結果顯示,在具有高交聯 位址(羥基苯乙烯)聚合物的配方物之光阻/底塗層介面,具 有浮污或底腳。類似地,SEM結果顯示在低濃度的三聚氰 醯胺交聯劑之情況下,線圖案潰散,其可能歸因於底塗層 固化作用之不足,而導致在光阻/底塗層介面之互相摻混現 象。在具有高濃度交聯劑之情況下,觀察到浮污之形成及 底腳輪廓。 雖然本發明在此係參照特定具體例而加以說明,應瞭 解可進行修改、改良與變化,而不偏離此所揭露之本發明 觀心的精神與範脅。因此,意欲涵蓋位於所附申請專利範 圍的精神與範疇内之所有的該等修改、改良與變化。軌 (請先閲讀背面之注意事項再填寫本頁) 、\二 口 ^0574234 A7 __ B7_ V. Description of the invention (20) The general synthetic procedure for preparing the polymer of the present invention by polymerization in tetrahydrofuran is described below. Under a stream of nitrogen, in a round bottom flask equipped with a reflux condenser and a gas inlet, a mixture of monomer, initiator and chain transfer agent was dissolved in 150 g of tetrahydrofuran. The mixture was heated to 65 ° C with stirring and maintained at the same temperature for 20 hours under nitrogen. After that, the reaction mixture was cooled to room temperature, and an entire portion was subjected to gel permeation chromatography (GPC). The reaction mixture was diluted with 60 ml of methanol, and sodium methoxide (10% solution) in methanol was added thereto for methanolysis. The mixture was refluxed and the by-product acetic acid acetate was continuously removed by performing an azeotropic distillation for 4 hours and using a Dean-Stark interceptor. After cooling to room temperature, 20 g of Amberlyst 15 resin (ion exchange resin available from Rohm & Haas) was added to the mixture for ion exchange of sodium and stirring for 3 hours. The resin was filtered, and the solution was slowly poured into 4 liters of distilled water. The solid polymer was separated by filtration and redissolved in 300 ml of tetrahydrofuran. The polymer was precipitated in 2 liters of isopropanol. After filtration, the solid was dried under vacuum at 60 ° C for 24 hours. The general analysis procedure used is as follows. The molecular weight and molecular weight distribution were measured using liquid chromatography (refractive index detection, GPC V software Millennium) from Waters, which was equipped with the following P-10, 7.8 x 250 mm column: 10-4A, 500A and 50A (from Phenomena Company) and Tetrahydrooran extract. Thermal Decomposition Measurement (TGA) is based on Perkin-Elmer pyrolysis. The paper size is applicable to China National Standard (CNS) A4 (210X297 mm) 23 (Please read the precautions on the back before filling in this (Page). # 574234 A7 __ B7___ V. Description of the invention (21) The quantity analyzer performs it. The glass transition temperature (Tg) of the polymer was measured using a Perkin-Elmer Pyris 1 differential scanning calorimeter with a heating rate of 1 (TC / minute). A Bruker 400 MHz NMR-spectrometer was used The structure and composition of the polymer were analyzed by 13C NMR. The first example polymer was based on the general procedure described above. The monomers [4-biphenylfluorenyl acrylate (72.37 g, 0.303 mole), and acetoxyl were used. Styrene (10.56 g, 0.055 mol) and ethylene glycol dicyclopentenyl ether methacrylate (17.07 g, 0.065 mol)], initiator VAZO 67 (6.00 g, 6.0% by weight relative to monomer) and a chain transfer agent 1-dodecanethiol (1.80g, 30% by weight relative to initiator) were polymerized. Transesterification was performed using 4.0 g of sodium methoxide solution. Yield : 91.3 g, 94%. Mw4 14,666; MW / MJ 1.92. With 35% weight loss at 310 °. Glass transition temperature (Tg) is 128 ° C. Polymer composition (mol%): 69% biphenyl Methacrylic acid ester units; 6% acetylene units; and 15% ethylene glycol dicyclopentenyl ether fluorenyl acrylate units. Two polymers were prepared according to the general procedure described above. The monomers [4-biphenyl methacrylate (62.74 g, 0.263 moles), ethoxylated styrene (42.23 g, moles), and ethylene glycol were used. Alcohol dicyclopentenyl ether methacrylate (230.3 g, 0.0087 mol)], initiator 28067 (6.00 g, 0.0% by weight relative to monomer) and chain transfer agent 1- A mixture of dodecanethiol (1.80 g, 30% by weight relative to the initiator) was polymerized. Transesterification was performed using 5-0 g of sodium alkoxide solution. Yield: 91_5 g, 95%. M413,715; The paper is 197. Thermal decomposition measurement (TGA): 5% weight loss at 305 ° C, glass transition temperature (Tg) is 124 This paper is applicable to China National Standard (CNS) A4 specification (210X297 mm) 24 (Please Read the notes on the back before filling this page) • Order · 豢 | 574234 A7 __ B7_ V. Description of the invention (22) ° c. Polymer: Composition (mole%): 60% biphenyl methacrylate unit 19% hydroxystyrene units; and 21% ethylene glycol dicyclopentenyl ether methacrylate units. The third example polymer follows the general procedure described above The monomer [4-biphenyl methacrylate (54.09 g '0.227 mole), ethoxylated styrene (22.09 g, 0.136 mole) and ethylene glycol dicyclopentenyl ether methacrylate (23.82 g, 0.09 mole)], initiator \ ^ \ 20 67 (6.00 g, 6.0 weight 0 / 〇 relative to the monomer) and chain transfer agent 1-dodecanethiol (1.8 G, 30% by weight relative to the initiator) was polymerized. For transesterification, 6.0 g of sodium methoxide solution was used. Yield: 85.5 grams, 91%. 1 is 11,262 / 1.88; Mw / Mn is 1.88. Thermal decomposition test (TGA): 5% weight loss at 300 ° C, glass transition temperature (Tg) is 118 ° C. Polymer composition (Mole: 51% biphenylfluorenyl acrylate units; 28% warp-styrene units; and 21% ethylene glycol dicyclopentenyl ether methacrylate units. The fourth example polymer was Under a stream of nitrogen, in a 500 ml round bottom flask equipped with a reflux condenser and a gas inlet, the monomer [4-biphenylfluorenyl acrylate (BPMA) (37.74 g, 0.158 mol), acetamidine Styrene (8.54 g, 0.0527 mole) and ethylene glycol dicyclopentenyl ether methacrylate (1382 g, 0.0527 mole)] and chain transfer agent dodecanethiol (108 g , 30% by weight of the initiator) was dissolved in 836 g of propylene glycol monofluorenyl ether acetate (PGMEA) (40% solids). The mixture was heated to 70 π. Then, in 15 minutes Slowly add 6.4 grams of this paper to the reaction mixture. Applicable Chinese National Standard (CNS) A4 specification (210X297). -25-(Please read the precautions on the back before filling this page). Τ 574234 A7 ___B7 V. Description of the Invention (23) (Please read the notes on the back before filling this page) VAZ0 67® in PGMEA [ Based on the initiator, Dupont's product, 2,2-Azo- (2-methylbutane)] (3.6 grams, 6% by weight of the monomer used) 'and interference under nitrogen Stir for 24 hours. Use a UV detector set at 254 nm to detect the disappearance of BPMA by GPC. After 24 hours, the BPMA is less than 0.1%. The reaction mixture is cooled to room temperature. Then added to the flask 2.0 g of sodium methoxide (10% solution) in methanol and $ 0 ml of methanol. The reaction mixture was refluxed for 3 hours, and azeotropic using a Dean-Stark interceptor. About 25 ml of methanol was removed by distillation. The solution was cooled to room temperature 'and 10.0 g of Amberlyst 15 resin was added. The reaction mixture was stirred for 2 hours, and the resin was separated by filtration. Under vacuum and below 60 C At the temperature, the solution was distilled with half the volume left to remove methanol and propylene glycol methyl by-product. Finally, a 30% by weight solid solution was prepared by adding PGMEA to it. It was 15,700; Mw / Mn was 1.95 ; And polymer composition (mol%): 59% biphenyl methyl acrylate Units: 20% styrene-based units; and 21% ethylene glycol dicyclopentenyl ether fluorenyl acrylate units. Example 5: A polymer under a nitrogen stream is equipped with a reflux condenser and a gas inlet. In a 500-ml round-bottomed flask, the monomers [4-biphenylmethacrylate (BPMA) (37.74 g, 0.158 mol), ethoxylated styrene (8.54 g, 0.0527 mol), and ethylene glycol Dicyclopentenyl ether methacrylate (1382 g, 0.0527 mole)] and a chain transfer agent (dodecanethiol (2008 g, 30% by weight of initiator)), dissolved in 83.6 g of propylene glycol Monomethyl ether acetate (PGMEA) (40% solids). Heat the mixture to 7 (rc. Then, this paper size applies Chinese National Standard (CNS) A4 specifications) -26-574234 A7 ___B7_ V. Description of the invention (24) Add slowly to the reaction mixture in 15 minutes VAZ0 67® [Free radical initiator, Dupont's product '2, 2, Azobis (2-methylbutane)] in 6.4 grams of PGMEA (3.6 grams, 6 weight percent of monomer used) . Then, the temperature was gradually increased to 80 ° C and stirred under nitrogen for 4 hours. The UV detector set at 254 nm was used to detect the disappearance of BPMA by GPC. After 3 hours, the BPMA was less than 0.10 / 0. The mixture was cooled to room temperature. 20 g of sodium methoxide (10% solution) in methanol and 50 ml of methanol were then added to the flask. The reaction mixture was refluxed for 3 hours, and about 25 ml of methanol was removed by co-evaporation using a Dean-Stark interceptor. The solution was cooled to room temperature, and 100% was added. Grams of Amberlyst 15 resin. The reaction mixture was stirred for 2 hours, and the resin was separated by filtration. Under vacuum and below 60 ° C., the solution was distilled at half the volume to remove methanol and by-products. Propylene glycol fluorenyl ether. Finally, a 30% by weight solid matter solution was prepared by adding PGMEA to it .... 11,044; Mw / Mn was 2.11; and polymer composition (mole%): 60% Biphenyl methacrylate units; 19/0 hydroxystyrene units; and 21% ethylene glycol dicyclopentyl succinic acid methyl hydrazine units. In the following examples, the following polymers were prepared: Undercoating Formulation: The first undercoating layer is 14.02g of the first polymer, 4.0g] \ 4 \ ^ 1001 ^ (melamine conjugate parent agent 'from Sanwa Chemical Co., Ltd., Kanazawa, Japan) solution ( 20% by weight solution in propylene glycol monofluorenyl ether acetate (PGMEA) and 1 to 875 grams Hexyl benzene sulfonate thermal acid generator solution (20% by weight solution in PGMEA) was mixed and dissolved in 80. 丨 grams of propylene glycol monomethyl ether acetate. This paper applies Chinese National Standard (CNS) A4 specifications ( 21〇χ297mm) 27 (Please read the notes on the back before filling this page):? Τ— Mongolia, 574234 A7 ____B7_ 5. In the description of the invention (25) (PGMEA), 100 grams of undercoating was obtained. Solution (total 15% by weight solids). The mixture (Polymer / Crosslinker / TAG II 93.5 / 4.0 / 2.5%) was rolled overnight, and the basecoat solution was filtered through a 0.1 micron Teflon filter II Times 0 The second example of the undercoat layer is 14.02 grams of the second polymer, 4.0 grams of a MW100LM crosslinker solution (a 20% by weight solution in PGMEA) and 1.875 grams of a cyclohexyltoluene sulfonated thermal acid generator solution (located in PGMEA 20% by weight of the solution) was mixed and dissolved in 80.1 g of propylene glycol monofluorenyl ether acetate (PGMEA) to obtain 100 g of an undercoating solution (a total of 15% by weight of solids). This mixture (polymer /Crosslinker/TAG=93.5/4.0/2.5%) rolling overnight, and the base coating solution Filtered through a 0.1 micron Teflon filter twice. The third undercoat layer contained 14.02 grams of the third polymer, 4.0 grams of the MW100LM crosslinker solution (a 20% by weight solution in PGMEA), and 1.875 grams of cyclohexyl toluene. The sulfonated hot acid generator solution (20% by weight solution in PGMEA) was mixed and dissolved in 80.1 g of propylene glycol monofluorenyl ether acetate (PGMEA) to obtain 100 g of an undercoating solution (total .15 weight % Solids). The mixture (polymer / crosslinker / TAG 2 93.5 / 4.0 / 2.5%) was rolled overnight, and the undercoat solution was filtered through a 0.1 micron Teflon filter twice. The fourth example of the undercoat layer was 46.75 grams of the fourth polymer, 4.0 grams of a MW100LM crosslinker solution (a 20% by weight solution in PGMEA), and 1.875 grams of a cyclohexylmethanite yellowing thermal acid generator solution (in PGMEA). 20% by weight solution) The size of the mixed paper is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) -28-(Please read the precautions on the back before filling this page)-· Order-574234 A7 B7 V. Description of the invention (26) is combined and dissolved in 47.4 g of propylene glycol monomethyl ether acetate (PGMEA) to obtain 100 g of an undercoating solution (15 wt% solids in total). The mixture (polymer / crosslinker / TAG = 93.5 / 4.0 / 2.5%) was rolled overnight, and the primer solution was filtered through a 0.1 micron Teflon filter twice. The fifth example of the undercoat layer was 46.75 grams of the fifth polymer, 4.0 grams of a MW100LM crosslinker solution (a 20% by weight solution in PGMEA), and 1.875 grams of a cyclohexyl toluene sulfonate thermal acid generator solution (in a PGMEA solution). 20 wt% solution) was mixed and dissolved in 47.4 g of propylene glycol monomethyl ether acetate (PGMEA) to obtain 100 g of an undercoating solution (total 15 wt% solids). The mixture (polymer / crosslinker / TAG = 93.5 / 4.0 / 2.5%) was rolled overnight, and the primer solution was filtered twice through a 0.1 micron Teflon filter. The sixth example of the undercoat layer is 14.33 g of the polymer of the first example, 2.0 g of 1 ^ 1001 ^^ 4 crosslinker solution (a 20% by weight solution in PGMEA), and 1.875 g of cyclohexyltoluene sulfonate thermal acid generator. The solution (a 20% by weight solution in PGMEA) was mixed and dissolved in 81.8 grams of propylene glycol monomethyl ether acetate (PGMEA) to obtain 100 grams of an undercoating solution (total, 15% by weight solids). The mixture (polymer / crosslinker / TAG = 95.5 / 2.0 / 2.5%) was rolled overnight, and the primer solution was filtered through a 0.1 micron Teflon filter twice. The seventh example of the undercoat layer is 14.18 g of the first example polymer, 3.0 g of a MW100LM crosslinker solution (a 20% by weight solution in PGMEA), and 1.875 g of a cyclohexyltoluene xanthate thermal acid generator solution (in PGMEA). 20% by weight solution) mixed 29 (please read the precautions on the back before filling this page) This paper size applies Chinese National Standard (CNS) A4 specification (210X297mm) 574234 A7 __ B7_ V. Description of the invention (27) And dissolved in 81.0 g of propylene glycol monofluorenyl ether acetate (PGMEA) to obtain 100 g of an undercoating solution (15 wt% solids in total). The mixture (polymer / crosslinker / TAG = 94.5 / 3.0 / 2.5%) was rolled overnight, and the undercoat solution was filtered through a 0.1 micron Teflon filter twice. The 8th undercoat layer will be 13.83g of the polymer of the 1st example, 6.0g] \ 4 ~ 1001 ^] ^ crosslinker solution (20% by weight solution in PGMEA) and 1.875g of cyclohexyltoluene xanthophyll acid. The generator solution (20% by weight solution in PGMEA) was mixed and dissolved in 78.4 g of propylene glycol monomethyl ether acetate (PGMEA) to obtain 100 g of an undercoating solution (total 15 weight% solids). The mixture (polymer / crosslinker / TAG = 91.5 / 6.0 / 2.5%) was rolled overnight, and the undercoat solution was filtered through a 0.1 micron Teflon filter twice. The ninth example undercoat layer produced 13.13 g of the first example polymer, 10.0 g] ^ 11 ^ 1001 ^] ^ crosslinker solution (20% by weight solution in PGMEA) and 1.875 g of cyclohexyltoluene sulfonated hot acid to generate The solvent solution (a 20% by weight solution in PGMEA) was mixed and dissolved in 75.0 g of propylene glycol monomethyl ether acetate (PGMEA) to obtain 100 g of an undercoating solution (total .15% by weight solids). The mixture (polymer / crosslinker / TAG = 87.5 / 10.0 / 2.5%) was rolled overnight, and the base coating solution was filtered through a 0.1 micron Teflon filter twice. In the tenth base coat, 14.02 g of the first polymer, 4.0 g of a Powderlink crosslinker solution (a 20% by weight solution in PGMEA), and 1.875 g of a cyclohexyl toluene sulfonate thermal acid generator solution (in a PGMEA) 20% by weight solution) The paper size of this paper applies Chinese National Standard (CNS) A4 specification (210X297 mm) 30 (Please read the precautions on the back before filling this page)-Order-, 0m, 574234 A7 _ B7___ V. Invention Explanation (28), and dissolving in 80_1 g of propylene glycol monomethyl ether acetate (PGMEA) to obtain 100 g of the undercoating solution (a total of 15% by weight of solids). The mixture (polymer / crosslinker / TAG = 93.5 / 4.0 / 2.5%) was rolled overnight, and the primer solution was filtered through a 0.1 micron Teflon filter twice. The 11th undercoat layer produced 14.10 g of the first polymer, 4.0 g of 4 ^^ 1001 ^ 1 ^ crosslinking agent solution (a 20% by weight solution in PGMEA), and 1.5 g of cyclohexyltoluene sulfonated hot acid. The agent solution (a 20% by weight solution in PGMEA) was mixed and dissolved in 80.4 g of propylene glycol monomethyl ether acetate (PGMEA) to obtain 100 g of an undercoating solution (a total of 15 weight% solids). The mixture (polymer / crosslinker / TAG = 94.0 / 4.0 / 2.0%) was rolled overnight, and the undercoat solution was filtered twice through a 0.1 micron Teflon filter. The twelfth example of the undercoat layer was 13.95 grams of the first example polymer, 4.0 grams of the MW100LM crosslinker solution (a 20% by weight solution in PGMEA) and 2.25 grams of a cyclohexyl toluene sulfonate thermal acid generator solution (located in PGMEA 20% by weight of the solution) were mixed and dissolved in 79.8 g of propylene glycol monofluorenyl ether acetate (PGMEA) to obtain 100 g of an undercoating solution (a total of 15% by weight of solids). The mixture (polymer / crosslinker / TAG = 93.0 / 4.0 / 3.0%) was rolled overnight, and the undercoat solution was filtered through a 0.1 micron Teflon filter twice. The thirteenth undercoat layer was 13.80 g of the first polymer, 4.0 g of a MW100LM crosslinker solution (a 20 wt.% Solution in PGMEA) and 3.0 g of a cyclohexyltoluene xanthate thermal acid generator solution (located 20% by weight solution in PGMEA), this paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm) -31-(Please read the precautions on the back before filling this page) · Order — 574234 A7 B7 5 2. Description of the invention (29) and dissolving in 79_2 g of propylene glycol monomethyl ether acetate (PGMEA) to obtain 100 g of an undercoating solution (a total of 15% by weight of solids). The mixture (polymer / crosslinker / TAG = 93.0 / 4.0 / 4.0%) was rolled overnight, and the undercoat solution was filtered twice through a 0.1 micron Teflon filter. In the 14th undercoat layer, 13.65 g of the polymer of the 1st example, 4.0 g of the polymer solution (20% by weight of the solution in PGMEA), and 3.75 g of the cyclohexyltoluene sulfonated hot acid generator solution (20 wt% solution in PGMEA) was mixed and dissolved in 78.6 g of propylene glycol monofluorenyl ether acetate (PGMEA) to obtain 100 g of a base coat solution (total 15 wt% solids). The mixture (polymer / crosslinker / TAG = 91.0 / 4.0 / 5.0%) was rolled overnight, and the undercoat solution was filtered twice through a 0.1 micron Teflon filter. The general procedure for lithographic test primer coating formulations is as follows. An undercoat layer from an undercoating formulation was spin-coated on a stone wafer and baked at 205 ° C for 90 seconds to obtain a thin film of 0.50 micron thickness. A pattern layer (TIS2000, a chemically amplified double-layer resist from Arch Chemical Corporation (Norwalk, Connecticut, USA)) was spin-coated on the undercoat layer, and baked at 135 ° C for 1 minute, and A 0.25 micron thick film was obtained. The coated wafer is then imaged using an Ultratech 248 nm stepper. After exposure, the wafer was baked at 125 ° C for 1 minute and mixed and developed in 0.262 N aqueous tetramethylammonium hydroxide (TMAH) for 60 seconds. Wash the wafer with deionized water and spin dry. The pattern was analyzed by scanning electron microscopy (SEM). Images from the SEM show that the bilayer resist can resolve profiles as small as 0.13 microns. This paper size applies Chinese National Standard (CNS) A4 specification (210X297 mm) 32 (Please read the notes on the back before filling out this page)-, τ 574234 A7B7 V. Description of the invention (3Q) Composition of the invention 妁 TIS-2000 General lithographic properties of objects are: light speed range: 30 to 40 (mJ / cm2); resolution range: 0.120 to 0.130 (micrometers); and focal depth: 0.70 to 1.0 (0.130 micrometer contour). The lithography test results of this composition are shown in Table 1 below. Table 1: Summary of formula and pattern quality evaluation examples of basecoat formulations Polymer polymer (g) Crosslinking agent Crosslinking agent (g) 20wt ° / 〇 Solids Thermal acid generator (g) 20wt% solids PGMEA (g) Resolution separation line (0.13 microns) Photoresist / undercoating (DL / UL) Interface quality 1 Polymer 1 14.02 MW100 LM 4.0 1.875 80.1 No footing at the IL / UL interface 2 Polymer 2 14.02 MW100 LM 4.0 1.875 80.1 No feet on the IL / UL interface 3 polymer 3 14.02 MW100 LM 4.0 1.875 80.1 Fouling on the EL / UL interface 4 polymer 4 14.02 MW100 LM 4.0 1.875 80.1 No feet on the EL / UL interface 5 polymer 5 14.02 MW100 LM 4.0 1.875 80.1 No feet on IL / UL interface 6 Polymer 1 14.3 MW100 LM 2.0 1.875 81.8 Line pattern collapse 7 Polymer 1 14.18 MW100 LM 3.0 1.875 81.0 Foot 8 Polymer 1 13.83 MW100 · LM 6.0 1.875 78.4 No feet on IL / UL interface 9 Polymer 1 13.13 MW100 LM 10.0 1.875 75.0 Feet 10 polymer 1 14.02 Powder-link 4.0 1.875 80.1 No feet on IL / UL interface 11 Polymer 1 14.10 MW 100 LM 4.0 1.5 80.4 No footing on the IL / UL interface 12 Aggregation 1 13.95 MW 100 LM 4.0 2.5 79.8 No feet on the IL / UL interface 13 Polymer 1 13.80 MW100 LM 4.0 3.0 79.2 No feet on the IL / UL interface 14 Polymer 1 13.65 MW 100 LM 4.0 3.75 78.6 T-top 33 ( Please read the notes on the back before filling this page.) This paper size is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) 574234 A7 ____B7 _ V. Description of the invention (31) Scanning electron microscopy (SEM) The results show that the photoresist / primer interface of the formulation with a high cross-linking site (hydroxystyrene) polymer has stains or feet. Similarly, SEM results show that in the case of a low concentration of melamine crosslinker, the line pattern collapses, which may be due to the insufficient curing effect of the undercoat layer, which may result in the photoresist / undercoat layer interface. Blending phenomenon. With a high concentration of the cross-linking agent, the formation of floating stains and the outline of the feet were observed. Although the present invention is described herein with reference to specific examples, it should be understood that modifications, improvements, and changes can be made without departing from the spirit and scope of the inventive concept disclosed herein. Therefore, it is intended to cover all such modifications, improvements and changes which fall within the spirit and scope of the scope of the appended patent applications. Track (Please read the notes on the back before filling this page), \ 二 口 ^ 0

Claims (1)

經濟部智慧財產局員工消費合作社印製Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 574234— I m 4^25574234-- I m 4 ^ 25 補无I六、申請專利範圍 第9H04609號專利申請案申請號專利範圍修正本92年4月25曰 1· 一種含羥基聚合物,其包括具有下列化學式之111、11與〇 單元: R' R·Supplement No. VI. Patent Application No. 9H04609 Patent Application Application No. Patent Scope Amendment April 25, 1992 1. A hydroxyl-containing polymer including units 111, 11, and 0 having the following chemical formula: R 'R · 〇 十 R4〇4rR: 其中R1係選自氫或曱基所組成之群組;112係一單價基團 以致於具有下標m之單體單元係選自被取代或未被取 代的CVCu芳基丙烯酸酯基及(:6_(:14芳基甲基丙婦酸酉旨 基所組成之群組,其中該取代基係選自苯基、Cl_4烷基 或匸^4烧氧基;R3係一單價基團以致於具有下標η之單 體單元係選自下列基團所組成之群組:經經基官能化的 CrCs烷基丙烯酸酯、曱基丙烯酸酯基及c6_Cl4芳基; R4係一 CVCio直鏈或分支亞烧基;p為整數1至5,其限 制條件為:[-R40-]p中之碳原子數目不超過30 ; R5係選 自下列基團所組成之群組:Ci-Cio直鏈、分支或環狀焼 基、被取代或未被取代的<:6-(:14芳基及被取代或未被取 代的(:7-(:15脂環烴;及m為40至70,η為15至35,及〇為 15至25。 2·如申請專利範圍第丨項之聚合物,其中該具有下標m之 單體單元係聯苯基丙烯酸酯或曱基丙烯酸酯單元, R5為二環戊烯基。 及 閱 讀 背 之 注 意 事 項 Ιΐ •訂 # 本紙張尺度適用中國國家標準(CNS)A4規格(21〇 x 297公釐) 35 574234 、申凊專利範圍 3·如申請專利範圍第丨項之聚合物,其中該具有下標n之單 體單元係一羥基苯乙烯單元,及R5為二環戊烯基。 4·如申請專利範圍第旧之聚合物^中該具有下標⑽之 單體單元係耳葬苯基丙烯酸醋或甲基丙婦酸醋單元;該具 有下標η之單體單元係羥基苯乙烯單元;及具有下標〇 之單體單7L係乙二醇二環戊烯基丙烯酸酯或曱基丙烯 酸酯單元。 5·如申凊專利範圍第4項之聚合物,其中該具有下標〇之單 體單元係一乙二醇二環戊烯基甲基丙烯酸酯單元,該具 有下標m之單體單元係聯苯基甲基丙烯酸酯單元。 •訂 6·如申請專利範圍第4項之聚合物,其具有自10,000至 24,〇〇〇之數目平均分子量。 7· —種熱固化聚合物組成物,其包含一含羥基聚合物、一 胺基交聯劑及一熱酸生成劑,其中該含羥基聚合物係包 括具下列化學式之m、η與〇單元之一聚合物·· R· R* R1〇 十 R4〇4rR: where R1 is selected from the group consisting of hydrogen or fluorenyl; 112 is a monovalent group such that the monomer unit with the subscript m is selected from substituted or unsubstituted CVCu aryl A group consisting of an acrylate group and a (: 6 _ (: 14arylmethylpropionate) group, wherein the substituent is selected from the group consisting of phenyl, Cl_4 alkyl, or ^^ alkyl; R3 is a Monovalent groups such that the monomer units with the subscript η are selected from the group consisting of: CrCs alkyl acrylates functionalized with fluorenyl groups, fluorenyl acrylates, and c6_Cl4 aryl groups; R4 is a CVCio straight chain or branched alkylene group; p is an integer of 1 to 5, the limitation is: the number of carbon atoms in [-R40-] p does not exceed 30; R5 is selected from the group consisting of: Ci -Cio linear, branched or cyclic fluorenyl, substituted or unsubstituted <: 6-(: 14 aryl and substituted or unsubstituted (: 7-(: 15 alicyclic hydrocarbons); and m It is 40 to 70, η is 15 to 35, and 0 is 15 to 25. 2. The polymer according to item 丨 of the patent application range, wherein the monomer unit having the subscript m is biphenyl acrylate or fluorenyl C The acrylate unit, R5 is dicyclopentenyl. And the note for reading Ιΐ • Order # This paper size is applicable to China National Standard (CNS) A4 specification (21 × 297 mm) 35 574234, applying for patent scope 3. The polymer according to item 丨 of the patent application, wherein the monomer unit having the subscript n is a hydroxystyrene unit, and R5 is a dicyclopentenyl group. 4. The polymer according to the oldest application of the patent application. ^ The monomer unit with the subscript 系 is an otor phenyl acrylate or methacrylic acid vinegar unit; the monomer unit with the subscript η is a hydroxystyrene unit; and the monomer with the subscript 0 Single 7L is ethylene glycol dicyclopentenyl acrylate or fluorenyl acrylate unit. 5. The polymer of item 4 of the patent application, wherein the monomer unit with a subscript 0 is ethylene glycol di Cyclopentenyl methacrylate unit, the monomer unit with the subscript m is a biphenyl methacrylate unit. • Order 6. If the polymer of item 4 of the patent application scope, it has from 10,000 to 24 , 〇〇〇 number average molecular weight. 7 · — A thermosetting polymer composition comprising a hydroxyl-containing polymer, an amine-based cross-linking agent, and a thermal acid generator, wherein the hydroxyl-containing polymer comprises one of m, η, and 0 units having the following chemical formula: ··· R · R * R1 O-t-R O^rR' 經濟部智慧財產局員工消費合作社印製 其中R1係選自氫或甲基所組成之群組;R2係一單價基 團,具有下標m之單體單元係選自被取代或未被取代的 C6-Cu芳基丙烯酸酯基及(:6-(:14芳基甲基丙烯酸酯基所 組成之群組,其中該取代基係選自苯基、Ch4烷基或Cl-4 本紙張尺度適用中國國家標準(CNS)A4規格(21〇 x 297公釐) 574234OtR O ^ rR 'Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs where R1 is selected from the group consisting of hydrogen or methyl; R2 is a monovalent group, and the monomer unit with the subscript m is selected from the substituted Or an unsubstituted C6-Cu aryl acrylate group and (: 6- (: 14 aryl methacrylate group), wherein the substituent is selected from phenyl, Ch4 alkyl, or Cl- 4 This paper size is applicable to China National Standard (CNS) A4 (21 × 297 mm) 574234 經濟部智慧財產局員工消費合作社印製Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 燒氧基;R3係-單價基團,具有下標仏單體單元係選 自下列基團所組成之群組:經羥基官能化的Ci_c8烷基 丙烯酸酯、甲基丙烯酸酯基及C6_Cm芳基;R4係一 直^或分支亞烷基;p為整數1至5,其限制條件為: [-ν〇-]ρ中之碳原子數目不超過30 ; R5係選自下列基團 所組成之群組·· 直鏈、分支或環狀烷基、被取代 或未被取代的C0-CM芳基及被取代或未被取代的^/^ 脂環煙;及m為40至70,η為15至35,及〇為15至25。 8·如申請專利範圍第7項之組成物,其中該具有下標 單體單元係聯苯基丙烯酸酯或甲基丙烯酸酯單元,及 R5為二環戊烯基。 9·如申請專利範圍第7項之組成物,其中該具有下標n之單 體單元係一經基苯乙稀單元,及R5為二環戊稀基。 10·如申請專利範圍第9項之組成物,其中該具有下標爪之 單體單元係聯苯基丙烯酸酯或甲基丙烯酸酯單元;該具 有下“η之早體单元係經基苯乙稀單元;及具有下標〇 之單體單元係乙二醇二環戊烯基丙烯酸酯或甲基丙烯 酸酯單元。 11 ·如申請專利範圍第9項之組成物,其中該具有下標〇之單 體單元係一乙二醇二環戊稀基甲基丙烯酸酯單元,該具 有下標m之單體單元係聯苯基甲基丙婦酸醋單元。 12. 如申請專利範圍第5項之組成物,其中該含經基聚合物 具有自10,000至24,000之分子量。 13. —種具光微影敏感性之經塗覆基材,其包括: 本紙張尺度適用中國國家標準(CNS)A4規格(2〗0 X 297公釐)R3 group-monovalent group with subscript 仏 monomer unit is selected from the group consisting of: Ci_c8 alkyl acrylate functionalized with hydroxy, methacrylate and C6_Cm aryl ; R4 is always ^ or branched alkylene; p is an integer of 1 to 5, the restrictions are: the number of carbon atoms in [-ν〇-] ρ does not exceed 30; R5 is selected from the group consisting of the following groups Group ·· Linear, branched or cyclic alkyl, substituted or unsubstituted CO-CM aryl, and substituted or unsubstituted alicyclic smoke; and m is 40 to 70, and η is 15 To 35, and 0 to 15 to 25. 8. The composition according to item 7 of the scope of patent application, wherein the monomer unit having a subscript is a biphenylacrylate or methacrylate unit, and R5 is a dicyclopentenyl group. 9. The composition according to item 7 in the scope of the patent application, wherein the monomer unit having the subscript n is a phenylethene unit and R5 is a dicyclopentyl group. 10. The composition according to item 9 in the scope of the patent application, wherein the monomer unit with a subscript claw is a biphenyl acrylate or methacrylate unit; the early body unit with a "η" Diluted units; and monomer units with a subscript 0 are ethylene glycol dicyclopentenyl acrylate or methacrylate units. 11 · The composition according to item 9 of the scope of patent application, wherein the subunit with a subscript 0 The monomer unit is an ethylene glycol dicyclopentyl methacrylate unit, and the monomer unit having the subscript m is a biphenylmethylpropionate unit. 12. As described in item 5 of the scope of patent application The composition, wherein the warp-containing polymer has a molecular weight from 10,000 to 24,000. 13. —A kind of coated substrate with photolithographic sensitivity, including: The paper size is applicable to Chinese National Standard (CNS) A4 specifications (2〗 0 X 297 mm) 574234 A8 B8 C8574234 A8 B8 C8 、申請專利範圍 經 濟 部 智 慧 財 產 局 員 工 消 費 合 作 社 印 製 (a) —基材; (b) 位於該基材上之一熱固化底塗層;及 (c) 位於該底塗層上之一具輻射敏感性之阻劑表塗 層’其中該熱固化底塗層包括一熱固化組成物,其包含 一含羥基聚合物、一胺基交聯劑及一熱酸生成劑,及其 中該含羥基聚合物係包括具下列化學式之m、η與〇單元 之一聚合物:Scope of patent application: Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs (a)-substrate; (b) a heat-curing primer coating on the substrate; and (c) a mold coating on the primer coating Radiation-sensitive resist surface coating 'wherein the heat-curing primer layer includes a heat-curing composition, which includes a hydroxyl-containing polymer, an amine-based crosslinking agent, and a thermal acid generator, and the hydroxyl-containing The polymer system includes a polymer having one of m, η, and 0 units of the following chemical formula: 其中R1係選自氫或甲基所組成之群組;r2係一單價基 團’具有下標m之單體單元係選自被取代或未被取代的 芳基丙烯酸酯基及c6-C14芳基曱基丙烯酸酯基所 組成之群組,其中該取代基係選自苯基、Cl_4烷基或Cl_4 烧氧基;R3係一單價基團,具有下標n之單體單元係選 自下列基團所組成之群組··經羥基官能化的(^-(:8烷基 丙烯酸酯、甲基丙烯酸酯基及c6_Cl4芳基;R4係一Ci-Ci〇 直鏈或分支亞烷基;p為整數1至5,其限制條件為: [-R40-]p*之碳原子數目不超過30 ; R5係選自下列基團 所組成之群組:Ci-Cio直鍵、分支或環狀统基、被取代 或未被取代的C^-Ci4芳基及被取代或未被取代的c7_c15 脂環烴;及m為40至70,η為15至35,及〇為15至25。 氏張尺度適用中關家標準(CNS)A4規格⑵G χ 297公爱) —:---:--------裝---------T---τ I----- (請先閱讀背面之注意事項再填寫本頁) 38 574234 經濟部智慧財產局員工消費合作社印製 &8 C8 ~^—--— D8____ 、申請專利範圍 14·如申請專利範圍第13項之經塗覆基材,其中該具有下標 瓜之單體單元係聯苯基丙稀酸s旨或甲基_酸醋單 70,及R5為二環戊烯基。 15.如申請專利範圍第13項之經塗覆基材,其中該具有下標 11之單體單元係一羥基苯乙烯單元,及R5為二環戊烯基。 16·如申請專利範圍第13項之經塗覆基材,其中該具有下標 111之單體單元係聯苯基丙烯酸酯或甲基丙烯酸酯單 元;該具有下標η之單體單元係羥基苯乙烯單元;及具 有下標〇之單體單元係乙二醇二環戊烯基丙烯酸酯或曱 基丙烯酸酯單元。 17·如申請專利範圍第16項之經塗覆基材,其中該具有下標 〇之單體單元係一乙二醇二環戊烯基甲基丙烯酸酯單 元,該具有下標m之單體單元係聯苯基甲基丙烯酸酯單 元。 18·如申請專利範圍第16項之經塗覆基材,其中該含羥基聚 合物具有自10,000至24,000之數目平均分子量。 19· 一種製造凸紋結構之方法,其步驟包括: (a)形成一經塗覆基材,其中該經塗覆基材包括: (1) 一基材, (2) 位於該基材上之一熱固化底塗層,及 (3) 位於該底塗層上之一具輻射敏感性之阻劑表塗層, 其中該熱固化底塗層包括一熱固化組成物,其包含一含 羥基聚合物、一胺基交聯劑及一熱酸生成劑,及其中該 含羥基聚合物係包括具下列化學式之m、η與〇單元之一 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公爱) 39 „ --------^---7 —----- (請先閱讀背面之注意事項再填寫本頁) -A. 574234 A8 B8 C8 D8 經濟部智慧財產局員工消費合作社印製 、申請專利範圍 聚合物: R, R* R丨Wherein R1 is selected from the group consisting of hydrogen or methyl; r2 is a monovalent group 'monomer unit with a subscript m is selected from substituted or unsubstituted aryl acrylate and c6-C14 aromatic A group consisting of a methyl acrylate group, wherein the substituent is selected from the group consisting of phenyl, Cl_4 alkyl, or Cl_4 alkoxy; R3 is a monovalent group, and the monomer unit having the subscript n is selected from the following Groups composed of groups · · hydroxyl-functionalized (^-(: 8 alkyl acrylate, methacrylate and c6_Cl4 aryl groups; R4 is a Ci-Cio linear or branched alkylene group; p is an integer from 1 to 5, and its limiting conditions are: [-R40-] p * has a carbon number of not more than 30; R5 is selected from the group consisting of Ci-Cio straight bonds, branches, or rings Lithium group, substituted or unsubstituted C ^ -Ci4 aryl group, and substituted or unsubstituted c7_c15 alicyclic hydrocarbon; and m is 40 to 70, η is 15 to 35, and 0 is 15 to 25. The scale is applicable to the Zhongguanjia Standard (CNS) A4 specification ⑵G χ 297 public love) —: ---: -------- install --------- T --- τ I-- --- (Please read the notes on the back before filling out this page) 38 574234 Printed by the Consumer Cooperatives of the Ministry of Intellectual Property Bureau & 8 C8 ~ ^ ----D8____, the scope of application for patents 14. If coated substrates for the scope of the patent application No. 13, among which the single unit with subscript melon It is biphenylpropionic acid or methyl-acid acetate 70, and R5 is dicyclopentenyl. 15. The coated substrate according to item 13 of the patent application scope, wherein the The monomer unit is a monohydroxystyrene unit, and R5 is a dicyclopentenyl group. 16. The coated substrate according to item 13 of the application, wherein the monomer unit having the subscript 111 is biphenylacrylic acid An ester or methacrylate unit; the monomer unit having a subscript η is a hydroxystyrene unit; and the monomer unit having a subscript 0 is an ethylene glycol dicyclopentenyl acrylate or a fluorenyl acrylate unit. 17. The coated substrate according to item 16 of the application, wherein the monomer unit with a subscript 0 is a glycol dicyclopentenyl methacrylate unit, and the monomer with a subscript m The unit is a biphenyl methacrylate unit. A coated substrate, wherein the hydroxyl-containing polymer has a number average molecular weight from 10,000 to 24,000. 19. A method of manufacturing a relief structure, the steps comprising: (a) forming a coated substrate, wherein the coated substrate The cover substrate includes: (1) a substrate, (2) a thermally-cured primer coating on the substrate, and (3) a radiation-sensitive resist surface coating on the primer. The heat-curing primer layer includes a heat-curing composition including a hydroxyl-containing polymer, an amine-based cross-linking agent, and a thermal acid generator, and the hydroxyl-containing polymer includes m having the following chemical formula: One of the units of η and 〇 This paper size is applicable to China National Standard (CNS) A4 specification (210 X 297 public love) 39 „-------- ^ --- 7 —----- (please first Read the notes on the back and fill out this page) -A. 574234 A8 B8 C8 D8 Printed and patented by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economy Polymers: R, R * R 丨 其中R1係選自氫或甲基所組成之群組;R2係一單價基 團,具有下標m之單體單元係選自被取代或未被取代的 C6-C14芳基丙烯酸酯基及C6-C14芳基曱基丙烯酸酯基所 組成之群組,其中該取代基係選自苯基、Cm烷基或Cm 烷氧基;R3係一單價基團,具有下標η之單體單元係選 自下列基團所組成之群組:經羥基官能化的(^-(:8烷基 丙烯酸酯、甲基丙烯酸酯基及C6-C14芳基;R4係一 Cl_Cl〇 直鏈或分支亞烷基;p為整數1至5,其限制條件為: [-R40-]pt之碳原子數目不超過30 ; R5係選自下列基團 所組成之群組· CrCio直鏈、分支或環狀烧基、被取代 或未被取代的C6_Ci4方基及被取代或未被取代的c7_c 1 $ 脂環烴;及m為40至70,η為15至35,及〇為15至25。 (b) 該具輻射敏感性之表塗層以成影像方式暴露於光化 輻射;及 (c) 藉由以一顯影劑顯影该具輻射敏感性之表塗層,而 形成一阻劑圖案。 20.如申請專利範圍第19項之方法,其中該具有下標爪之單 體單元係聯苯基丙烯酸酯或曱基丙烯酸酯單元,及r5 ^紙張尺度適用中國國家標準(CNS)A4規格(21〇 X 297公 • —"---^----------------訂---Γ ------ (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 C8 ^---— D8__ 、申請專利範圍 ~~^ --- 為二環戊烯基。 21.如申請專利範圍第19項之方法,其中該具有下標n之單 體單元係—減笨乙稀單m5為二環戊烯基。 仏如申請專利範圍第19項之方法,其中該具有下標m之單 體單元係聯苯基丙制^基丙締_單元;該具有 下標η之單體單元係羥基苯乙烯單元;及具有下標〇之單 體單元係乙二醇二環戊烯基丙烯酸酯或甲基丙烯酸酯 單元。 23.如申请專利範圍第22項之方法,其中該具有下標〇之單 體單元係一乙二醇二環戊烯基甲基丙烯酸酯單元,該具 有下標m之單體單元係聯苯基曱基丙稀酸酯單元。Where R1 is selected from the group consisting of hydrogen or methyl; R2 is a monovalent group, and the monomer unit with the subscript m is selected from substituted or unsubstituted C6-C14 aryl acrylate groups and C6 -A group consisting of -C14 arylfluorenyl acrylate, wherein the substituent is selected from phenyl, Cm alkyl or Cm alkoxy; R3 is a monovalent group, a monomer unit having a subscript η Selected from the group consisting of: hydroxyl-functionalized (^-(: 8 alkyl acrylate, methacrylate, and C6-C14 aryl groups; R4 is a Cl_Cl〇 linear or branched alkylene P is an integer from 1 to 5, with the following restrictions: [-R40-] pt The number of carbon atoms does not exceed 30; R5 is selected from the group consisting of: CrCio linear, branched or cyclic Group, substituted or unsubstituted C6_Ci4 square group, and substituted or unsubstituted c7_c 1 $ alicyclic hydrocarbon; and m is 40 to 70, η is 15 to 35, and 0 is 15 to 25. (b) The radiation-sensitive topcoat is imagewise exposed to actinic radiation; and (c) a resist pattern is formed by developing the radiation-sensitive topcoat with a developer 20. The method according to item 19 of the scope of patent application, wherein the monomer unit with a subscript claw is a biphenyl acrylate or a fluorenyl acrylate unit, and the r5 ^ paper size applies the Chinese National Standard (CNS) A4 specification (21〇X 297 male • — " --- ^ ---------------- Order --- Γ ------ (Please read the precautions on the back before (Fill in this page) The C8 printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs ^ ---- D8__, the scope of patent application ~~ ^ --- is a dicyclopentenyl. Wherein, the monomer unit with subscript n-dibenzylene m5 is dicyclopentenyl. 仏 For example, the method in the scope of patent application No. 19, wherein the monomer unit with subscript m is biphenyl. Cyl ^ allyl units; the monomer units with subscript η are hydroxystyrene units; and the monomer units with subscript 0 are ethylene glycol dicyclopentenyl acrylate or methacrylate units 23. The method according to item 22 of the scope of patent application, wherein the monomer unit with a subscript 0 is a monoethylene glycol dicyclopentenyl methacrylate monoester The subscript m has the biphenyl-based monomer units of acrylic ester units Yue-yl. ί — L-------,¾ (請先閱讀背面之注意事項再填寫本頁) 訂—— 24·如申請專利範圍第22項之方法,其中該含羥基聚合物具 有自10,000至24,000之數目平均分子量。ί — L -------, ¾ (Please read the notes on the back before filling out this page) Order —— 24 · If the method of applying for the scope of patent No. 22, the hydroxyl-containing polymer has from 10,000 to Number average molecular weight of 24,000. -«^1 ϋ 1^^ — 本紙張尺度適用中國國家標準(CNS)A4規格(2〗〇 χ 297公釐)-«^ 1 ϋ 1 ^^ — This paper size applies to China National Standard (CNS) A4 (2〗 〇 χ 297 mm)
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