TW202133245A - Method for processing wafers - Google Patents

Method for processing wafers Download PDF

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TW202133245A
TW202133245A TW109105481A TW109105481A TW202133245A TW 202133245 A TW202133245 A TW 202133245A TW 109105481 A TW109105481 A TW 109105481A TW 109105481 A TW109105481 A TW 109105481A TW 202133245 A TW202133245 A TW 202133245A
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Taiwan
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wafer
composite
processing method
frame
polished
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TW109105481A
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Chinese (zh)
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林詳然
楊榮文
洪泰源
陳志偉
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力成科技股份有限公司
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Abstract

A method for processing a wafer, comprising following steps: providing a wafer having a first surface with a wafer identification (wafer ID) and a second surface without the wafer ID; adhering the wafer to a first wafer frame and forming a first identification tag over the first wafer frame to form a first composite wafer; grinding the second surface of the wafer of the first composite wafer to reduce a thickness of the wafer; transferring a grinded wafer of the first composite wafer from the first wafer frame to adhere thereof to a second wafer frame, forming a second composite wafer; and cutting the grinded wafer of the second composite wafer into a plurality of separated dies from the first surface of the grinded wafer.

Description

晶圓處理方法Wafer processing method

本發明係關於積體電路封裝製程,且特別是關於適用於積體電路封裝製程之一種晶圓處理方法。The present invention relates to an integrated circuit packaging process, and particularly relates to a wafer processing method suitable for an integrated circuit packaging process.

於現今積體電路封裝製程中,對於供給晶圓之識別與檢查是由操作人員採目視方式比對晶圓供應商提供的晶圓資料及生產工單的紙本資料所達成,倘若操作人員沒有比對或是出現比對錯誤,便會造成積體電路封裝製程的執行錯誤問題,進而降低製程準確率。In the current integrated circuit packaging process, the identification and inspection of the supplied wafers is achieved by the operator visually comparing the wafer data provided by the wafer supplier and the paper data of the production work order. If the operator does not The comparison or the occurrence of a comparison error will cause the execution error of the integrated circuit packaging process, thereby reducing the accuracy of the process.

此外,採目視方式的晶圓識別與檢查極為耗時,不利於積體電路封裝製程的效率提升。In addition, the visual wafer identification and inspection is extremely time-consuming, which is not conducive to the improvement of the efficiency of the integrated circuit packaging process.

有鑑於此,本發明提供了適用於積體電路封裝製程之一種晶圓處理方法,藉由製程管理系統及識別標籤的搭配,可提升積體電路封裝製程的製造效率與準確率。In view of this, the present invention provides a wafer processing method suitable for the integrated circuit packaging process. With the combination of the process management system and the identification label, the manufacturing efficiency and accuracy of the integrated circuit packaging process can be improved.

依據一實施例,本發明之晶圓處理方法,包括以下步驟:提供一晶圓,其中該晶圓具有標示有一晶圓編號之第一表面及未標示有該晶圓編號之一第二表面;透過一貼片膠膜黏附該晶圓與一第一晶圓框架並於該第一晶圓框架上標示一第一識別標籤,以形成一第一複合晶圓,其中該貼片膠膜覆蓋該晶圓之該第一表面,該第一識別標籤包括該晶圓編號;研磨該第一複合晶圓內之該晶圓之該第二表面,以減少該晶圓之厚度;透過一切割膠膜將該第一複合晶園內之經研磨之該晶圓自該第一晶圓框架轉移並黏附至一第二晶圓框架並移除該貼片膠膜與該第一晶圓框架,以形成一第二複合晶圓,其中該切割膠膜覆蓋該晶圓之該第二表面,而經研磨的該晶圓之該第一表面的該晶圓編號為露出;以及自經研磨後該晶圓之該第一表面切割該第二複合晶圓內經研磨的該晶圓成為分隔的複數個晶粒。According to one embodiment, the wafer processing method of the present invention includes the following steps: providing a wafer, wherein the wafer has a first surface marked with a wafer number and a second surface not marked with the wafer number; Adhere the wafer and a first wafer frame through a patch adhesive film and mark a first identification label on the first wafer frame to form a first composite wafer, wherein the patch adhesive film covers the On the first surface of the wafer, the first identification label includes the wafer number; grinding the second surface of the wafer in the first composite wafer to reduce the thickness of the wafer; The polished wafer in the first composite wafer is transferred from the first wafer frame and adhered to a second wafer frame, and the patch film and the first wafer frame are removed to form a A second composite wafer, wherein the dicing film covers the second surface of the wafer, and the wafer number of the first surface of the polished wafer is exposed; and since the polished wafer The first surface cuts the ground wafer in the second composite wafer into a plurality of separated dies.

依據一實施例,係藉由一貼膠模機將該晶圓透過該貼片膠膜黏附於該第一晶圓框架並於該第一晶圓框架上標示該第一識別標籤。According to an embodiment, the wafer is adhered to the first wafer frame through the die attach film by an adhesive die machine, and the first identification label is marked on the first wafer frame.

依據一實施例,該第一識別標籤更包括一製程編號。According to an embodiment, the first identification label further includes a process number.

依據一實施例,係藉由一晶圓研磨機依據該第一識別標籤之該製程編號選定一研磨製程,以研磨該第一複合晶圓內之該晶圓之該第二表面。According to an embodiment, a polishing process is selected by a wafer polishing machine according to the process number of the first identification label to polish the second surface of the wafer in the first composite wafer.

依據一實施例,係藉由一去膠模機自該第一晶圓框架移除該貼片膠膜並藉由該貼膠模機轉移並透過該切割膠膜黏附經研磨之該晶圓與該第二晶圓框架,以形成該第二複合晶圓。According to one embodiment, the die attach film is removed from the first wafer frame by a die remover and transferred by the die die machine, and the polished wafer and the wafer are adhered through the dicing die. The second wafer frame to form the second composite wafer.

依據一實施例,係藉由一晶圓切割機辨識經研磨的該晶圓之露出的該第一表面的該晶圓編號以選定一切割製程,自經研磨後之該晶圓之該第一表面切割該第二複合晶圓內經研磨的該晶圓成為分隔的複數個晶粒。According to an embodiment, a wafer number of the exposed first surface of the polished wafer is identified by a wafer dicing machine to select a dicing process, since the first of the polished wafer The polished wafer in the second composite wafer is surface-cut into a plurality of separated dies.

依據一實施例,該晶圓處理方法還包括選取該些晶粒之一進行一封裝製程以形成一積體電路封裝物之步驟。According to an embodiment, the wafer processing method further includes the step of selecting one of the dies to perform a packaging process to form an integrated circuit package.

依據一實施例,該第一識別標籤為一無線射頻辨識標籤、一雷射標籤或一條碼。According to an embodiment, the first identification tag is a radio frequency identification tag, a laser tag or a code.

依據一實施例,該第一識別標籤係由一製程管理系統所建立。According to an embodiment, the first identification tag is established by a process management system.

依據一實施例,該晶圓之該第一表面為形成有複數個積體電路元件之主動表面,而該晶圓之該第二表面為未形成有任何積體電路元件之非主動表面。According to an embodiment, the first surface of the wafer is an active surface on which a plurality of integrated circuit elements are formed, and the second surface of the wafer is a non-active surface on which any integrated circuit elements are not formed.

請參照第1圖所示之示意圖,顯示了依據本發明一實施例之一種晶圓處理方法之流程圖,該晶圓處理方法適用於積體電路封裝製程,包括步驟S1-S6。Please refer to the schematic diagram shown in FIG. 1, which shows a flowchart of a wafer processing method according to an embodiment of the present invention. The wafer processing method is suitable for an integrated circuit packaging process and includes steps S1-S6.

首先,於步驟S1中,提供一晶圓具有標示有一晶圓編號(wafer ID)之第一表面及未標示有該晶圓編號之一第二表面,其中該第一表面與該第二表面為相對表面。First, in step S1, a wafer having a first surface marked with a wafer ID and a second surface not marked with the wafer ID is provided, wherein the first surface and the second surface are Relative surface.

於一實施例中,該晶圓之該第一表面為設置有複數個積體電路元件之主動表面(或稱晶圓正面),而該晶圓之該第二表面為未設置有任何半導體積體電路元件之非主動表面(或稱晶圓背面)。該晶圓為來一晶圓供應商所提供之待封裝晶圓,其藉由具分檢(sorting)與影像辨識(image identification)功能之一倉儲機台(stocker)所提供。於步驟S1施行之前,晶圓供應商預先提供了存放於一第一晶圓盒內的該晶圓及標示有該晶圓擬進行之封裝製程之製程編號之流程工作卡(run card),故具分檢與影像辨識功能之該倉儲機台可將該晶圓接收入庫並同時輸入與上傳該流程工作卡上所載之該晶圓擬進行之封裝製程至與該倉儲機台訊號連結之一生產管理系統。如此,於後續步驟S1施行時,便可藉由該倉儲機台出庫該晶圓並將之傳輸至一第二晶圓盒內以進行後續處理步驟。In one embodiment, the first surface of the wafer is an active surface (or the front side of the wafer) provided with a plurality of integrated circuit elements, and the second surface of the wafer is not provided with any semiconductor products. The inactive surface of the bulk circuit component (or the backside of the wafer). The wafer is a wafer to be packaged provided by a wafer supplier, which is provided by a stocker with sorting and image identification functions. Before the implementation of step S1, the wafer supplier provided the wafer stored in a first wafer cassette and a process work card (run card) marked with the process number of the packaging process to be performed on the wafer in advance, so The warehouse machine with sub-inspection and image recognition functions can receive the wafer into the warehouse and simultaneously input and upload the package process to be carried out by the wafer contained on the process work card to one of the signal links with the warehouse machine Production management system. In this way, when the subsequent step S1 is performed, the wafer can be taken out of the warehouse by the warehouse machine and transferred to a second wafer cassette for subsequent processing steps.

接著,於步驟S2中,透過一貼片膠膜黏附該晶圓與一第一晶圓框架(wafer frame)並於該第一晶圓框架上標示一第一識別標籤,以形成一第一複合晶圓。該貼片膠膜覆蓋該晶圓之該第一表面以於後續研磨該晶圓之該第二表面時保護該第一表面,而該第一識別標籤包括該晶圓編號。第2圖為一示意圖,显示了依據本發明一實施例之第一複合晶圓之上視示意圖,其中第一複合晶圓100包括該晶圓10、該第一晶圓框架20、該貼面膠膜30及該第一識別標籤40。Then, in step S2, the wafer and a first wafer frame are adhered through an adhesive film and a first identification label is marked on the first wafer frame to form a first composite Wafer. The patch adhesive film covers the first surface of the wafer to protect the first surface when the second surface of the wafer is subsequently polished, and the first identification label includes the wafer number. Figure 2 is a schematic diagram showing a schematic top view of a first composite wafer according to an embodiment of the present invention, wherein the first composite wafer 100 includes the wafer 10, the first wafer frame 20, and the veneer The adhesive film 30 and the first identification label 40.

於一實施例中,可採用人工或無人搬運車(AGV)等方式,將完成步驟S1的該第二晶圓盒傳輸至一貼膠模機,並藉由該貼膠膜機執行步驟S2。該貼膠膜機具備條碼標籤印製、雷射刻印及貼合等功能,可根據該生產管理系統內的生產派工資訊,於該第一晶圓框架上標示該第一識別標籤。該第一識別標籤例如為一無線射頻辨識標籤、一雷射標籤或一條碼標籤。該第一標示標籤除了包括該晶圓之該晶圓編號外,可選擇性地包括一製程編號及/或該第二晶圓盒之一晶圓盒編號。該第一識別標籤可藉由貼合或雷射刻印方式標示於該第一晶圓框架上。In one embodiment, manual or unmanned transport vehicle (AGV) may be used to transfer the second wafer cassette that has completed step S1 to an adhesive die attaching machine, and step S2 is performed by the adhesive film attaching machine. The film sticking machine has functions such as barcode label printing, laser marking and sticking, and can mark the first identification label on the first wafer frame according to the production dispatch information in the production management system. The first identification tag is, for example, a radio frequency identification tag, a laser tag or a code tag. In addition to the wafer number of the wafer, the first marking label can optionally include a process number and/or a cassette number of the second wafer cassette. The first identification label can be marked on the first wafer frame by laminating or laser marking.

接著,於步驟S3中,研磨該第一複合晶圓內之該晶圓之該第二表面,以減少該晶圓之厚度。Next, in step S3, the second surface of the wafer in the first composite wafer is ground to reduce the thickness of the wafer.

於一實施例中,可採用人工或無人搬運車(AGV)等方式,將完成步驟S2的該第二晶圓盒傳輸至一晶圓研磨機,並藉由該晶圓研磨機執行步驟S3,研磨該第一複合晶圓內中未為該貼片膠膜所黏附之該晶圓之該第二表面。該晶圓研磨機經由辨識該第一識別標籤後,選定並執行對應之研磨製程以研磨該晶圓之該第二表面,以減少該晶圓之厚度至一預定厚度,並得到研磨後之該晶圓。In one embodiment, the second wafer cassette that has completed step S2 can be transferred to a wafer grinder by manual or unmanned guided vehicle (AGV), and step S3 is performed by the wafer grinder. Grinding the second surface of the wafer in the first composite wafer that is not adhered by the patch adhesive film. After identifying the first identification label, the wafer grinder selects and executes a corresponding grinding process to grind the second surface of the wafer, so as to reduce the thickness of the wafer to a predetermined thickness, and obtain the polished Wafer.

接著,於步驟S4中,透過一切割膠膜將該第一複合晶園內之經研磨之該晶圓自該第一晶圓框架轉移並黏附至一第二晶圓框架並移除該貼片膠膜,以形成一第二複合晶圓,其中該切割膠膜覆蓋該晶圓之該第二表面,而經研磨的該晶圓之該第一表面的該晶圓編號為露出。第3圖為一示意圖,显示了依據本發明一實施例之第二複合晶圓之上視示意圖,其中第二複合晶圓200包括經研磨後之該晶圓10’、該第二晶圓框架50、該切割膠膜60及該晶圓編號70。Then, in step S4, the polished wafer in the first composite wafer is transferred from the first wafer frame through a dicing adhesive film and adhered to a second wafer frame, and the patch adhesive is removed Film to form a second composite wafer, wherein the dicing glue film covers the second surface of the wafer, and the wafer number of the first surface of the polished wafer is exposed. Figure 3 is a schematic diagram showing a schematic top view of a second composite wafer according to an embodiment of the present invention, wherein the second composite wafer 200 includes the polished wafer 10' and the second wafer frame 50. The dicing film 60 and the wafer number 70.

於一實施例中,可採用人工或無人搬運車(AGV)等方式,將完成步驟S3的該第二晶圓盒傳輸至一膠帶轉貼機 (Remounter) ,並藉由該膠帶轉貼機執行步驟S4,透過該切割膠膜將該第一複合晶園內之經研磨之該晶圓自該第一晶圓框架轉移並黏附至該第二晶圓框架並移除該貼片膠膜,以形成該第二複合晶圓。此時,因已移除該貼片膠膜,故經研磨的該晶圓之該第一表面的該晶圓編號為露出的,於後續步驟中可使用該晶圓編號做為晶圓與製程之辨識之用。In one embodiment, the second wafer cassette that has completed step S3 can be transferred to a tape remounter (Remounter) by manual or unmanned guided vehicle (AGV), and step S4 is performed by the tape remounter. , Transfer the ground wafer in the first composite wafer from the first wafer frame through the dicing film and adhere to the second wafer frame and remove the patch film to form the The second composite wafer. At this time, because the patch film has been removed, the wafer number on the first surface of the polished wafer is exposed, and the wafer number can be used as a wafer and process in subsequent steps The use of identification.

接著,於步驟S5中,自經研磨後之該晶圓之該第一表面切割該第二複合晶圓內經研磨的該晶圓成為分隔的複數個晶粒。Next, in step S5, the polished wafer in the second composite wafer is cut from the first surface of the polished wafer to become a plurality of separated dies.

於一實施例中,可採用人工或無人搬運車(AGV)等方式,將完成步驟S4的該第二晶圓盒傳輸至一晶圓切割機,並藉由該晶圓切割機執行步驟S5,辨識經研磨的該晶圓之露出的該第一表面的該晶圓編號以選定一切割製程,自經研磨後之該晶圓之該第一表面切割該第二複合晶圓內經研磨的該晶圓成為分隔的複數個晶粒。值得注意的是,於步驟S5之後,該些晶粒仍穩定的貼合於該切割膠膜上,以留待後續封裝製程的使用。In one embodiment, the second wafer cassette that has completed step S4 can be transferred to a wafer dicing machine by manual or unmanned transport vehicle (AGV), and step S5 is performed by the wafer dicing machine. Identify the wafer number of the exposed first surface of the polished wafer to select a dicing process, and cut the polished crystal in the second composite wafer from the first surface of the polished wafer The circle becomes a plurality of separated crystal grains. It is worth noting that after step S5, the dies are still stably attached to the dicing film for use in the subsequent packaging process.

接著,可選擇性施行步驟S6,選取該些晶粒之一進行一封裝製程,以形成一積體電路封裝物。Then, step S6 can be optionally performed to select one of the dies to perform a packaging process to form an integrated circuit package.

於一實施例中,可採用人工或無人搬運車(AGV)等方式,將完成步驟S5的該第二晶圓盒傳輸至另一倉儲機台,並將包括分隔的該些晶粒的第二複合晶圓存入該倉儲機台備用,並視後續封裝製程之需求選取該些晶粒之一進行如打線接合或覆晶接合之一封裝製程,以形成一積體電路封裝物。In one embodiment, manual or unmanned transport vehicles (AGV) may be used to transfer the second wafer cassette that has completed step S5 to another storage machine, and transfer the second wafer cassette including the separated dies. The composite wafer is stored in the storage machine for later use, and one of the dies is selected for a packaging process such as wire bonding or flip chip bonding according to the requirements of the subsequent packaging process to form an integrated circuit package.

於上述步驟S2-S5中所使用的貼膠模機、晶圓研磨機、膠帶轉貼機、及晶圓切割機等製程機台皆分別與該製程管理系統訊號連結,該些步驟S2-S5亦藉由該製程管理系統依據標示有該晶圓擬進行之封裝製程之製程編號之流程工作卡(run card)於負責執行該些步驟S2-S5中不同製程機台之間進行晶圓的傳輸以及合適製程的執行。如此,本發明提供了適用於積體電路封裝製程之一晶圓處理方法,其藉由製程管理系統及識別標籤的搭配,並採用全自動的晶圓識別與製程執行方式,避免了傳統目視方式的晶圓識別與檢查可能遭遇問題,具有提升並確保積體電路封裝製程的製造效率與準確率之技術功效。本發明之晶圓處理方法除了適用於處裡常見的矽晶圓外,亦適用於處裡如砷化鎵之其他類型半導體晶圓,故於相關實施例中不再詳述該晶圓處理方法所處理之半導體晶圓的詳細實施樣態。Process machines such as the glue die attaching machine, wafer grinder, tape transfer machine, and wafer dicing machine used in the above steps S2-S5 are respectively connected to the process management system signal, and these steps S2-S5 are also The process management system is responsible for performing the transfer of wafers between different process machines in the steps S2-S5 according to the process number of the packaging process that the wafer is intended to perform according to the process work card (run card) and The execution of the appropriate manufacturing process. In this way, the present invention provides a wafer processing method suitable for the integrated circuit packaging process, which uses a process management system and identification label matching, and adopts a fully automatic wafer identification and process execution method, which avoids the traditional visual method. The wafer identification and inspection may encounter problems, and it has the technical effect of improving and ensuring the manufacturing efficiency and accuracy of the integrated circuit packaging process. The wafer processing method of the present invention is not only applicable to common silicon wafers in the field, but also applicable to other types of semiconductor wafers such as gallium arsenide in the field. Therefore, the wafer processing method will not be described in detail in the related embodiments. Detailed implementation of the processed semiconductor wafer.

綜上所述,雖然本發明已用較佳實施例揭露如上,然其並非用以限定本發明,本發明所屬技術領域中具有通常知識者,在不脫離本發明之精神和範圍內,當可作各種之更動與潤飾,因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。In summary, although the present invention has been disclosed in the above with preferred embodiments, it is not intended to limit the present invention. Those with ordinary knowledge in the technical field to which the present invention pertains can be used without departing from the spirit and scope of the present invention. Various changes and modifications are made. Therefore, the scope of protection of the present invention shall be subject to the scope of the attached patent application.

S1、S2、S3、S4、S5、S6:步驟 10:晶圓 10’:經研磨後之晶圓 20:第一晶圓框架 30:貼面膠膜 40:第一識別標籤 50:第二晶圓框架 60….切割膠膜 70:晶圓編號 100:第一複合晶圓 200:第二複合晶圓S1, S2, S3, S4, S5, S6: steps 10: Wafer 10’: Wafer after grinding 20: The first wafer frame 30: Veneer film 40: The first identification label 50: second wafer frame 60.... Cutting film 70: Wafer number 100: The first composite wafer 200: second composite wafer

第1圖顯示了依據本發明一實施例之一種晶圓處理方法之一示意流程圖。 第2圖顯示了依據本發明一實施例之第一複合晶圓之上視示意圖。 第3圖為一示意圖,顯示了依據本發明一實施例之第二複合晶圓之上視示意圖。FIG. 1 shows a schematic flowchart of a wafer processing method according to an embodiment of the present invention. FIG. 2 shows a schematic top view of a first composite wafer according to an embodiment of the present invention. FIG. 3 is a schematic diagram showing a schematic top view of a second composite wafer according to an embodiment of the present invention.

S1、S2、S3、S4、S5、S6:步驟S1, S2, S3, S4, S5, S6: steps

Claims (10)

一種晶圓處理方法,包括: 提供一晶圓,其中該晶圓具有標示有一晶圓編號之第一表面及未標示有該晶圓編號之一第二表面; 透過一貼片膠膜黏附該晶圓與一第一晶圓框架並於該第一晶圓框架上標示一第一識別標籤,以形成一第一複合晶圓,其中該貼片膠膜覆蓋該晶圓之該第一表面,該第一識別標籤包括該晶圓編號; 研磨該第一複合晶圓內之該晶圓之該第二表面,以減少該晶圓之厚度; 透過一切割膠膜將該第一複合晶園內之經研磨之該晶圓自該第一晶圓框架轉移並黏附至一第二晶圓框架並移除該貼片膠膜,以形成一第二複合晶圓,其中該切割膠膜覆蓋該晶圓之該第二表面,而經研磨的該晶圓之該第一表面的該晶圓編號為露出;以及 自經研磨後該晶圓之該第一表面切割該第二複合晶圓內經研磨的該晶圓成為分隔的複數個晶粒。A wafer processing method includes: Providing a wafer, wherein the wafer has a first surface marked with a wafer number and a second surface not marked with the wafer number; Adhere the wafer and a first wafer frame through a patch adhesive film and mark a first identification label on the first wafer frame to form a first composite wafer, wherein the patch adhesive film covers the On the first surface of the wafer, the first identification label includes the wafer number; Grinding the second surface of the wafer in the first composite wafer to reduce the thickness of the wafer; The polished wafer in the first composite wafer is transferred from the first wafer frame through a dicing film and adhered to a second wafer frame and the patch film is removed to form a second A composite wafer, wherein the dicing film covers the second surface of the wafer, and the wafer number of the first surface of the polished wafer is exposed; and After the first surface of the wafer is polished, the polished wafer in the second composite wafer is cut into a plurality of separated dies. 如申請專利範圍第1項所述之晶圓處理方法,其中係藉由一貼膠模機將該晶圓透過該貼片膠膜黏附於該第一晶圓框架並於該第一晶圓框架上標示該第一識別標籤。The wafer processing method described in claim 1, wherein the wafer is adhered to the first wafer frame through the chip adhesive film by a die attaching machine and placed on the first wafer frame The first identification label is marked on it. 如申請專利範圍第2項所述之晶圓處理方法,其中該第一識別標籤更包括一製程編號。In the wafer processing method described in item 2 of the scope of patent application, the first identification label further includes a process number. 如申請專利範圍第3項所述之晶圓處理方法,其中係藉由一晶圓研磨機依據該第一識別標籤之該製程編號選定一研磨製程,以研磨該第一複合晶圓內之該晶圓之該第二表面。The wafer processing method described in item 3 of the scope of patent application, wherein a polishing process is selected by a wafer polishing machine according to the process number of the first identification label to polish the first composite wafer The second surface of the wafer. 如申請專利範圍第3項所述之晶圓處理方法,其中係藉由一膠帶轉貼機,透過該切割膠膜將該第一複合晶園內之經研磨之該晶圓自該第一晶圓框架轉移並黏附至該第二晶圓框架並移除該貼片膠膜,以形成該第二複合晶圓。The wafer processing method described in item 3 of the scope of patent application, wherein the ground wafer in the first composite wafer is removed from the first wafer through the dicing film by a tape transfer machine The frame is transferred and adhered to the second wafer frame and the adhesive film is removed to form the second composite wafer. 如申請專利範圍第3項所述之晶圓處理方法,其中係藉由一晶圓切割機辨識經研磨的該晶圓之露出的該第一表面的該晶圓編號以選定一切割製程,自經研磨後之該晶圓之該第一表面切割該第二複合晶圓內經研磨的該晶圓成為分隔的複數個晶粒。The wafer processing method described in item 3 of the scope of patent application, wherein a wafer number of the exposed first surface of the polished wafer is identified by a wafer dicing machine to select a dicing process. The first surface of the polished wafer cuts the polished wafer in the second composite wafer into a plurality of separated dies. 如申請專利範圍第1項所述之晶圓處理方法,還包括選取該些晶粒之一進行一封裝製程,以形成一積體電路封裝物。The wafer processing method described in item 1 of the scope of the patent application further includes selecting one of the dies to perform a packaging process to form an integrated circuit package. 如申請專利範圍第1項所述之晶圓處理方法,其中該第一識別標籤為一無線射頻辨識標籤、一雷射標籤或一條碼標籤。In the wafer processing method described in item 1 of the scope of patent application, the first identification tag is a radio frequency identification tag, a laser tag or a code tag. 如申請專利範圍第1項所述之晶圓處理方法,其中該第一識別標籤係由一製程管理系統所建立。In the wafer processing method described in claim 1, wherein the first identification label is established by a process management system. 如申請專利範圍第1項所述之晶圓處理方法,其中該晶圓之該第一表面為形成有複數個積體電路元件之主動表面,而該晶圓之該第二表面為未形成有任何積體電路元件之非主動表面。In the wafer processing method described in claim 1, wherein the first surface of the wafer is an active surface on which a plurality of integrated circuit elements are formed, and the second surface of the wafer is not formed on The non-active surface of any integrated circuit component.
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