JPH11307488A - Semiconductor device, its manufacture, process guide and its processing device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To eliminate chipping or cracking of a substrate when the semiconductor substrate is carried to the next step. SOLUTION: A protecting tape 2 is sticked to a main face 1b of a wafer 1, and a periphery of the tape 2 is sticked to a processing guide ring 3, and the tape 2 is cut along the outer periphery of the processing guide ring 3. And, in this state, each is processed in a grinding step and a polishing step, and also in this state, each is carried to a dicing step. Thus, the processing guide ring 3 is provided in the outer periphery of the wafer 1, and as, in this state, each is carried to the next step, an outer force at the time of carrying is hard to be directly applied to the wafer 1 and cracking or chipping of the wafer 1 is eliminated during carrying.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device, a method of manufacturing the same, a processing guide, and a processing apparatus thereof, and more particularly to a technique which is effective when applied to an extremely thin semiconductor device.

[0002]

2. Description of the Related Art Since semiconductor chips used for IC cards are as thin as 10 to 200 .mu.m, there arises a problem of strength or rigidity of a substrate in a semiconductor substrate processing process. For this reason, conventionally, as shown in Japanese Patent Application Laid-Open No. 9-21595, a protective tape is applied to the element forming surface (main surface) of a semiconductor substrate of about 550 to 725 μm in which the wafer process is completed, After the thickness is reduced by grinding with a grinding device, the back surface of the semiconductor substrate is pasted on the dicing tape fixed to the frame (guide) with the back surface facing, and then the protective tape on the main surface is peeled off, It is known that a semiconductor substrate is cut into chips by dicing from the main surface side.

[0003]

In the prior art, however, the strength or rigidity of the semiconductor substrate after mechanical grinding has been completed is extremely thin, and the strength or rigidity of the semiconductor substrate has been reduced. If a force is directly applied when the substrate is transported to a process, for example, a polishing process, an etching process, a dicing process, or the like, there is a problem that the substrate is easily chipped or cracked.

The present invention has been made in view of the above-mentioned problems, and has been made in consideration of the above-described problems, and has the following features: a semiconductor device capable of eliminating chipping or cracking of a substrate when transporting the semiconductor substrate to a next step; It is an object to provide the processing device.

[0005]

According to the first aspect of the present invention, the main surface of the semiconductor substrate is connected to a processing guide having a larger opening than the semiconductor substrate through a protective tape coated with an adhesive. Support, in this supported state,
It has a structure in which the thickness of the semiconductor substrate is reduced from the back side of the semiconductor substrate and then separated into chips. This allows
Since the semiconductor substrate is already supported by the processing guide before the thickness of the semiconductor substrate is reduced, the semiconductor substrate can be provided with an extremely thin thickness, and is excellent in that it is suitable for use in a thin IC card. effective.

According to the second aspect of the present invention, a protective tape is attached to the main surface of the semiconductor substrate, and the periphery of the tape is attached to a processing guide, so that the semiconductor substrate is supported by the processing guide. And a thin processing step of reducing the thickness of the semiconductor substrate supported by the processing guide via the tape from the back side of the semiconductor substrate. As a result, the semiconductor substrate is supported on the processing guide by tape before the thin processing is performed, and after the processing, the semiconductor substrate can be transported to the next process in this supported state, so that a force acts directly on the semiconductor substrate. There is an excellent effect that the semiconductor substrate can be transported so as not to be broken, and chipping or cracking of the semiconductor substrate can be prevented.

[0007] In the above, the next step of being transported in a supported state may be a chip separation step of separating chips. The thinning step may be a grinding step of grinding the back surface of the semiconductor substrate with a grindstone (Claim 4), a polishing step of polishing the back surface of the semiconductor substrate with a polishing cloth (Claim 5), or both processes. May be sequentially performed (claim 6).

The processing guide may be fixed away from the grindstone during the grinding step (claim 7) or may be fixed away from the polishing cloth during the polishing step (claim 8). ). Further, the processing guide may be formed of a material that does not contaminate the semiconductor substrate (claim 9) or may be formed of a stainless steel material (claim 10), and the thickness thereof may be greater than that of the semiconductor substrate. (Claim 11) The thickness may be such that it can be accommodated in a carrying case for accommodating and transporting a plurality of semiconductor wafers (Claim 15), and the outer diameter may be slightly larger than the outer diameter of the semiconductor substrate. (Claim 13). Further, a positioning portion for determining a position in a circumferential direction may be formed in the processing guide.
2).

In the above invention, when the outer diameter of the semiconductor substrate is 6 inches (150 mm), the outer diameter of the processing guide is 8 inches (200 mm), and the outer diameter of the semiconductor substrate is 8 inches (200 mm). In some cases, the outer diameter of the processing guide is 1
It may be 2 inches (300 mm).
4). In the above invention, the thickness of the tape may be greater than the thickness of the semiconductor substrate (claim 16), and the tape may be formed of a polyolefin material (claim 17). Further, an adhesive may be applied to the entire surface of at least one side of the tape (Claim 18), or may be formed by a dicing tape used for dicing (Claim 1).
9).

In the above invention, the semiconductor substrate may be formed of a silicon substrate, and a semiconductor element which functions electrically may be formed in advance on the main surface side of the semiconductor substrate.
0). Further, after the above-mentioned thin processing step, the semiconductor substrate thinned in the thin processing step is cut by cutting a tape on the outer peripheral portion of the semiconductor substrate, so that the semiconductor substrate is taped on the main surface side of the semiconductor substrate. Removing a processing guide from the semiconductor substrate, and then attaching a second tape to the back surface opposite to the main surface of the semiconductor substrate, and supporting the semiconductor substrate on the second processing guide via the second tape. The opposite surface supporting step, and a main surface exposing step of exposing the main surface of the semiconductor substrate by peeling off the tape on the main surface side of the semiconductor substrate after that,
A dicing step of dicing from the main surface side of the semiconductor substrate supported by the second processing guide via the second tape (claim 21).

In addition, before the substrate supporting step, a groove forming step of forming a groove in advance from the main surface side of the semiconductor substrate is provided, and the semiconductor substrate is thinned until the groove is exposed from the back side of the semiconductor substrate by the thinning step. By doing so, the semiconductor substrate may be separated into chips. At this time, the depth of the groove may be larger than the thickness of the chip.

Next, in the invention according to claim 24,
A processing guide that supports the outer periphery of the semiconductor substrate via a tape, the processing guide has an opening that is larger than the outer diameter of the semiconductor substrate, and a flat portion having a predetermined area for the adhesive of the tape to adhere, It has. Thereby, the processing guide supports the semiconductor substrate in a state of being located on the outer periphery of the semiconductor substrate, so that it is possible to protect the semiconductor substrate so that a force is not directly applied to the semiconductor substrate, and to prevent chipping or cracking of the semiconductor substrate. There is an excellent effect that you can.

The processing guide according to the present invention may be annular (claim 25) or may be formed of a material that is attracted to the magnet (claim 26). Further, in the invention according to claim 27 (or claim 30), the semiconductor substrate is fixed to the table, and the grindstone (or polishing cloth) that moves relatively to the semiconductor substrate is in contact with the main surface of the semiconductor substrate. In a grinding device (or a polishing device) that contacts and grinds (or polishes) the opposite back surface, a processing guide that supports a semiconductor substrate via a tape is fixed on the outer periphery of the table, and the processing guide is a whetstone. (Or a polishing cloth) is provided with a fixing means for separating them so as not to contact with them.

Thus, it is possible to prevent unnecessary members other than the semiconductor substrate from being ground (or polished) during the grinding (or polishing), so that the object to be ground (or polished) is limited to the semiconductor substrate only. There is an excellent effect that grinding (or polishing) can be performed with high-precision control. The fixing means in the above invention may be a plurality of magnets installed on the outer periphery of the table and attracting the processing guide (claim 28 or claim 31), and a stay for fixing the processing guide from the outer circumference of the processing guide. (Claim 29 or claim 32).

[0015]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A preferred embodiment of the present invention will be described below with reference to the drawings. In this embodiment, a case will be described in which the present invention is applied to a method for processing a thin wall of a wafer on which an IC chip built in an IC card is mounted. (First Embodiment) FIG. 1 is a process diagram showing a manufacturing process of a semiconductor device according to a first embodiment of the present invention. Hereinafter, the first embodiment will be described in accordance with the process sequence shown in FIG. In addition,
In each embodiment, the semiconductor substrate is referred to as a wafer, the surface on which the elements are formed (mirror surface) is referred to as a main surface, and the surface opposite to the main surface (the surface to be ground or polished) is referred to as a back surface.

In FIG. 1 (a), a wafer (semiconductor substrate) 1 is 500-800 μm thick and has an outer diameter of 6 inches (150 mm) on which a wafer process has been completed and elements have been formed.
Made of single crystal silicon. First, as preparation for grinding machining of the back surface 1a of the wafer 1, the main surface 1
In order to protect b from damage and contamination during processing, and to improve strength and rigidity after grinding, a protective tape 2 made of resin or the like is attached to the main surface 1b of the wafer 1, and the periphery of the tape 2 is processed. The tape 2 is attached to the guide ring 3 and the tape 2 is cut along the outer periphery of the processing guide ring 3.

Specifically, as shown in FIG. 1 (b), a wafer mounter 15 is used to set a wafer 1 on a vacuum suction type table 16 such that the main surface 1b of the wafer 1 faces upward. The processing guide ring 3 is set in. The table 16 is supported by a spring and is movable in the vertical direction. And the plane part 3 of the processing guide ring 3
The upper surface of the wafer 1 is set at a position slightly higher than d, and the tape 2 is simultaneously attached to the wafer 1 and the processing guide ring 3 from above. At this time, the tape 2 comes into close contact with the entire surface of the wafer 1 by the action of the spring. The step shown in FIG. 1B corresponds to the substrate supporting step in claim 2.

As the tape 2, a base material thicker than the thickness of the processed wafer 1 is used to maintain the strength or rigidity of the thinned wafer 1 after the mechanical processing. The base material is a resin or the like, and is preferably polyolefin, polyethylene terephthalate, or the like. In addition, as the other base material, polyvinyl chloride may be used if it is a vinyl type, and ethylene / vinyl acetate copolymer may be used if it is a polyethylene type.

As the tape 2, a dicing tape for fixing the wafer to the processing guide frame at the time of dicing may be used. An adhesive 2b is applied to the entire surface of the tape 2, and the adhesive 2b whose adhesive strength is reduced by ultraviolet irradiation or heating is used. Machining guide ring 3
Is made of stainless steel so as to prevent contamination of the wafer 1 and to enable fixing with a magnet. The thickness is larger than that of the wafer 1 in order to improve the strength or rigidity, and is set to a thickness that can be stored in a carrying case that stores and transports a plurality of wafers. The outer diameter of the processing guide ring 3 is the outer diameter of the wafer 1 that can be purchased (6 inches, 8 inches, 1 inch).
The size is 8 inches (200 mm) so as to be the same as one size larger than the size of a commercially available wafer so that an automatic transfer line adjusted to 2 inches can be passed.

As shown in FIGS. 13 and 14, the processing guide ring 3 is annular, and has an opening 3c larger than the outer diameter of the wafer 1 for supporting around the wafer 1;
And a flat portion 3d having a predetermined area for causing the pressure-sensitive adhesive 2b to adhere and exhibit a predetermined adhesive force. Also,
Similar to the orientation flat (notch for positioning) 1d of the wafer 1, an orientation flat 3e is formed on the outer periphery of the processing guide ring 3. The orientation flat 3e is used, for example, when dicing the wafer 1, and aligns both orientation flats when attaching the wafer 1 to the guide ring 3. Also,
As shown in FIG. 14, the wafer 1 has the notch 1 for positioning.
In the case of e, a notch 3f is also formed in the processing guide ring 3.

With the wafer 1 attached to the processing guide ring 3, the wafer 1 is housed in a carrying case (not shown) and transported to the next grinding step. Next, as shown in FIG. 1C, the wafer 1 is sucked on the vacuum suction type grinding table 4 with the tape 2 side down. Thereafter, the processing guide ring 3 is pressed down from above using the elasticity of the tape 2 so that the processing guide ring 3 is positioned below the back surface 1a of the wafer 1 and is separated so that the grindstone 5 does not hit during grinding. Then, the processing guide ring 3 is fixed to the outer periphery of the grinding table 4 by the stay 13.

In order to fix the machining guide ring 3 on the outer periphery of the grinding table 4, a plurality of magnets may be provided on the outer periphery of the grinding table 4. Thus, the fixing and removal of the processing guide ring 3 by the magnet is easier than the case of fixing by the stay 13. In this manner, the wafer 1 is sucked and the processing guide ring 3 is fixed, and the wafer 1 is ground to a thickness of 100 μm to be thin.

Next, as shown in FIG. 1 (d), the wafer 1 is sucked on the vacuum suction type polishing table 6 above with the tape 2 side up. Thereafter, by utilizing the elasticity of the tape 2 to press the processing guide ring 3 upward, the processing guide ring 3 is positioned above the back surface 1a of the wafer 1 and is separated so that the polishing pad 9 does not hit during polishing. In this state, the processing guide ring 3 is fixed to the outer periphery of the polishing table 6 by the stay 14.

In order to polish the processing guide ring 3 on the outer periphery of the polishing table 4, a plurality of magnets may be provided on the outer periphery of the polishing table 6. By doing so, the fixing and removal of the machining guide ring 3 by the magnet becomes easier than when the stay is fixed by the stay 14. Further, it may be fixed with screws or the like instead of the magnet and the stay. Then, the usual polishing (chemical, mechanical,
Polishing) removes irregularities (streaks) and a crushed layer on the main surface due to the grinding machine processing. For example, 3
Remove μm by polishing. 1 (c) to 1 (d).
The step shown in (2) corresponds to the thin wall processing step in claim 2.

Next, as shown in FIG. 1 (e) and FIG. 2 (a) to FIG. 2 (e) showing subsequent steps after FIG. 1 (e), a guide frame for dicing is formed from the machining guide ring 3. 3
1 is transferred to the wafer 1. Specifically, the tape 2 attached to the ground and polished wafer 1 is sucked down on the vacuum suction type table 17 of the wafer mounter device (FIG. 1 (e)), and the tape 2 is held in this state. Cut along the outer periphery of the wafer 1 and remove the processing guide ring 3 (FIG. 2).
(A)). The step shown in FIG.
Corresponds to the removing step.

Then, a guide frame 31 for dicing is set around the wafer 1 in the suction state, and a dicing tape 21 coated with an adhesive 21b is adhered to the back surface of the wafer 1 and the guide frame 31 at the same time. The dicing tape 21 is cut on the guide frame 31 along the frame 31 (FIG. 2B). Next, it is inverted (FIG. 2)
(C)), the protective tape 2 on the main surface 1b side of the wafer 1 is peeled off (FIG. 2 (d)). At this time, a temperature is applied by a heater while the back surface side of the wafer 1 is attracted, or the adhesive force of the adhesive of the tape 2 is reduced by ultraviolet irradiation, and the tape 2 is peeled off. The step shown in FIG. 2B corresponds to the opposite surface supporting step in claim 21, and the step shown in FIG. 2D corresponds to the main surface exposing step in claim 21.

When the guide frame 31 for dicing is made of the same member as the processing guide ring 3, there is no need to prepare a plurality of guides, and there is a practical advantage. Further, if the tape 2 and the dicing tape 21 are made of the same material, there is no need to prepare a plurality of tapes, and there is a practical advantage. Next, as shown in FIG. 2E, the wafer 1 is cut into chip units of a predetermined size by a dicing blade 7. The magnet 46 is for fixing the guide frame 31. The step shown in FIG. 2E corresponds to the chip separating step in claim 3 and the dicing step in claim 21.

As described above, the wafer 1 is machined.
When the thickness of the wafer 1 is reduced, the wafer 1 is thinned while being supported by the tape 2 and the processing guide ring 3, so that the thickness of the wafer 1 is reduced to 10 to 100 μm, and further to about 50 μm without causing cracks or chipping. Can be processed. In addition, when the wafer 1 is transported using the processing guide ring 3 even after the wafer 1 is transported to the next step or the like after the processing even though the wafer 1 is thinned, stress during the transport is less likely to be applied to the wafer 1. Therefore, the wafer 1 is not broken or chipped during transportation. Further, even if the wafer 1 is partially broken, the other parts can be processed or assembled as non-defective products, so that the yield is improved.

(Second Embodiment) FIG. 3 is a process diagram showing a manufacturing process of a semiconductor device according to a second embodiment of the present invention.
Hereinafter, only the portions of the second embodiment that are different from those of the first embodiment will be described in accordance with the process sequence shown in FIG. First, FIG.
Before grinding the back surface of the wafer 1 on which the elements are formed as shown in FIG. 1, the main surface (the element surface) is used as a cutting reference (dicing reference surface) when dicing is performed from the back surface of the wafer 1. The edge 10 of the wafer 1 is cut along the x and y axes at a fixed distance from the scribe line on the (formation surface) and parallel to the scribe line.

Next, as shown in FIG. 3B, the wafer 1 is supported on the processing guide ring 3 by the tape 2 as in the first embodiment (b), and thereafter, the same as in the first embodiment. A grinding step and a polishing step are performed. Then, as shown in FIG. 3C, the dicing guide frame 31 is fixed with the magnet 46, and the wafer 1 is fixed to a predetermined dicing reference surface of the end portion 10 of the wafer 1 which has been previously inserted. Dicing to chip size. At this time, the dicing blade 7
It is desirable to cut in consideration of the tooth width.

(Third Embodiment) FIG. 4 is a process chart showing a manufacturing process of a semiconductor device according to a third embodiment of the present invention.
Hereinafter, only the portions of the third embodiment that are different from the first embodiment will be described in accordance with the process sequence shown in FIG. First, FIG.
As shown in FIG. 3B, after the wafer 1 is attached to the processing guide ring 3 with the tape 2 and before grinding the back surface of the wafer 1, a mark serving as a reference for cutting during dicing is formed. A dicing reference line (x, y) is marked on the tape 2 between the wafer 1 and the processing guide ring 3. At this time, it is desirable to determine a reference position such as a dicing blade width.

Then, a grinding step and a polishing step are performed as in the first embodiment. Then, in the dicing step, the wafer 1 is diced along a pre-marked dicing reference line (x, y) of the tape 2 to a predetermined chip size. At this time, accurate positioning can be performed by cutting according to the reference line marked on the tape.

(Fourth Embodiment) FIG. 5 is a process chart showing a manufacturing process of a semiconductor device according to a fourth embodiment of the present invention.
Hereinafter, the fourth embodiment will be described with respect to only portions different from the first embodiment in accordance with the process sequence shown in FIG. First, similarly to the first embodiment, a tape attaching step, a grinding step, and a polishing step are performed.

Next, as shown in FIG. 5, an alignment mark on the main surface (element forming surface) side of the wafer 1 is read by the detector 11 by transmitting infrared light or the like from the back surface side, and is read along the scribe line. To perform dicing, and cut to a predetermined chip size. At this time, it is desirable that the alignment mark can be parallelized to the substrate in the xy directions by a dicing microscope lens.

(Fifth Embodiment) FIG. 6 is a process chart showing a manufacturing process of a semiconductor device according to a fifth embodiment of the present invention.
Hereinafter, the fifth embodiment will be described with respect to only the portions different from the first embodiment in accordance with the process sequence shown in FIG. First, FIG.
As shown in (a), before grinding the back surface of the wafer 1, a groove 18 having a predetermined depth is formed in advance along a scribe line on the main surface (element formation surface) side of the wafer 1. Groove 1
The depth 8 may be shallower or deeper than the final chip thickness.

Next, as shown in FIGS. 6B to 6C, the back surface of the wafer 1 is ground while the main surface (element forming surface) side of the wafer 1 is adhered to the tape 2. And polishing. As a result, as shown in FIG. 6C, a wafer 1 divided into chips after polishing can be obtained. At this time, if the depth of the groove 18 formed in advance on the wafer 1 is shallow, the tape is peeled off, the wafer 1 is cut open and the wafer 1 is divided into chips, and if the depth of the groove 18 is deep, polishing is performed. The groove 18 is exposed to form a chip-like state in the polishing process.

(Sixth Embodiment) FIG. 7 is a process chart showing a manufacturing process of a semiconductor device according to a sixth embodiment of the present invention.
Hereinafter, only the portions of the sixth embodiment that are different from the first embodiment will be described in accordance with the process sequence shown in FIG. First, FIG.
As shown in (a), after forming a groove 19 in a scribe line on the main surface (element formation surface), the inside of the groove 19 is buried with a material 20 soluble in an organic solvent. This material 20 is, for example, wax, resist, or the like.

Then, as shown in FIGS. 7 (b) to 7 (c), the back surface of the wafer 1 is ground while the main surface (element forming surface) side of the wafer 1 is adhered to the tape 2. Perform processing and polishing. As a result, as shown in FIG.
After the polishing, a substrate divided into chips can be obtained. In this case, the tape 2 may be peeled off, the wall may be opened, and the tape 2 may be divided into chip units. Further, the polishing may be performed until the material 20 in which the grooves 19 are buried is exposed on the back surface of the wafer 1, and then the material 20 may be dissolved in an organic solvent to be divided into chips.

Next, still another embodiment will be described.
In the third embodiment, the dicing reference (x, y) is marked on the tape 2 between the wafer 1 and the processing guide ring 3.
As shown in FIG. 8, a dicing reference (x, y) may be provided in advance on the processing guide ring 3 itself.
The use of such a processing guide ring 3 facilitates positioning of the wafer 1 during dicing. Further, as shown in FIG. 12, a dicing reference (x, y) may be marked on the back side of the wafer 1.

Further, in each of the above embodiments, the case where a tape coated with an adhesive on one side is used as the tape 2 has been described, but as shown in FIG. Any double-sided adhesive tape may be used. In FIG. 9, the back surface of the wafer 1 is attached to the front surface of the double-sided tape 22, and the back surface of the double-sided tape 22 is attached to the processing guide ring 3, and the wafer 1 is supported by the processing guide ring 3. In this state, the wafer 1 is placed on the table 41 for polishing and the processing guide ring 3 is placed on the table 41.
To the outer periphery of Therefore, the machining guide ring 3
Are located on the back side of the double-sided tape 22, so that they are spaced apart without directly contacting the grinding wheel.

Further, in each of the above embodiments, the case where the processing guide ring 3 is thicker than the wafer 1 has been described. However, as shown in FIG. Good. That is, FIG.
Since the processing guide ring 31 is thinner than the wafer 1, the processing guide ring 31 does not contact the grindstone when the wafer 1 is ground. In addition, machining guide ring 3
Numeral 1 is set thinner than the thickness of the wafer 1 after polishing, and is made of stainless steel or ceramic in order to maintain its strength.

Further, as shown in FIG. 11, a double-sided tape 23 is used as a tape, a processing guide ring 31 thinner than the wafer 1 is used as a processing guide, and a reinforcing ring 33 of the processing guide ring 31 is further interposed through the double-sided tape 23. May be provided on the opposite surface. This makes it possible to provide a machining guide ring that can be easily fixed and has improved strength or rigidity.

In FIG. 1, if the diameter of the table 4 and the diameter of the outer circumference of the tape 2 and the processing guide ring 3 are matched, the processing guide ring 3 can be easily fixed.

[Brief description of the drawings]

FIG. 1 is a process chart showing a first embodiment of the present invention.

FIG. 2 is a process drawing showing a continuation of the first embodiment.

FIG. 3 is a process chart showing a second embodiment of the present invention.

FIG. 4 is a process chart showing a third embodiment of the present invention.

FIG. 5 is a process chart showing a fourth embodiment of the present invention.

FIG. 6 is a process chart showing a fifth embodiment of the present invention.

FIG. 7 is a process chart showing a sixth embodiment of the present invention.

FIG. 8 is a process chart showing another embodiment relating to the dicing standard of the present invention.

FIG. 9 is a process chart showing another embodiment of the tape of the present invention.

FIG. 10 is a process drawing showing another embodiment of the processing guide ring of the present invention.

FIG. 11 is a process chart showing still another embodiment of the processing guide ring of the present invention.

FIG. 12 is a process chart showing still another embodiment relating to the dicing standard of the present invention.

FIG. 13 is a structural diagram showing a shape of a processing guide ring in the present invention.

FIG. 14 is a structural view showing another shape of the processing guide ring in the present invention.

[Explanation of symbols]

 Reference Signs List 1 wafer 2 tape 3 processing guide ring 4 grinding table 5 grinding wheel 7 dicing blade

──────────────────────────────────────────────────の Continued on the front page (51) Int.Cl. ⁶ Identification code FI H01L 21/78 N (72) Inventor Toshifumi Izumi 1-chome, Showa-cho, Kariya-shi, Aichi Prefecture Inside DENSO Corporation (72) Inventor Fumiyoshi Kano 1-1-1, Showa-cho, Kariya-shi, Aichi Prefecture Inside DENSO Corporation

Claims (32)

[Claims] 1. A main surface side of a semiconductor substrate is supported by a processing guide having an opening larger than the semiconductor substrate via a protective tape coated with an adhesive, and the semiconductor substrate is supported in this state. A semiconductor device used for an IC card, wherein the thickness of the semiconductor substrate is reduced from the back side and then separated into chips. 2. A substrate supporting step of attaching a protective tape to a main surface side of a semiconductor substrate and attaching a periphery of the tape to a processing guide, thereby supporting the semiconductor substrate on the processing guide; A process of reducing the thickness of the semiconductor substrate supported on the semiconductor substrate via the tape from the back surface side of the semiconductor substrate. 3. The semiconductor device according to claim 2, further comprising, after the thinning step, a chip separating step of separating a semiconductor substrate supported by the processing guide via the tape into chips. Manufacturing method. 4. The method for manufacturing a semiconductor device according to claim 2, wherein the thinning step is a grinding step of grinding a back surface of the semiconductor substrate with a grindstone. 5. The method of manufacturing a semiconductor device according to claim 2, wherein the thinning step is a polishing step of polishing a back surface of the semiconductor substrate with a polishing cloth. 6. The polishing method according to claim 2, wherein the thinning step includes: a grinding step of grinding a back surface of the semiconductor substrate with a grindstone; and a polishing step of polishing the back surface of the semiconductor substrate with a polishing cloth after the grinding step. And a method for manufacturing a semiconductor device. 7. The method for manufacturing a semiconductor device according to claim 4, wherein the processing guide is fixed to be separated from the grindstone during the grinding step. 8. The method for manufacturing a semiconductor device according to claim 5, wherein the processing guide is fixed to the polishing cloth so as to be separated during the polishing step. 9. The method according to claim 2, wherein the processing guide is made of a material that does not contaminate the semiconductor substrate. 10. The method according to claim 2, wherein the processing guide is made of a stainless material. 11. The method according to claim 2, wherein a thickness of the processing guide is larger than a thickness of the semiconductor substrate. 12. The method for manufacturing a semiconductor device according to claim 2, wherein a positioning portion for determining a position in a circumferential direction is formed in the processing guide. 13. The method of manufacturing a semiconductor device according to claim 2, wherein an outer diameter of the processing guide is slightly larger than an outer diameter of the semiconductor substrate. 14. The semiconductor device according to claim 13, wherein when the outer diameter of the semiconductor substrate is 6 inches (150 mm), the outer diameter of the processing guide is 8 inches (200 mm), and the outer diameter of the semiconductor substrate is 8 inches. (200 mm), wherein the outer diameter of the processing guide is 12 inches (300 mm). 15. The method according to claim 2, wherein the thickness of the processing guide is a thickness that can be stored in a carrying case that stores and transports a plurality of semiconductor wafers. 16. The method according to claim 2, wherein a thickness of the tape is larger than a thickness of the semiconductor substrate supported by the processing guide. 17. The method according to claim 2, wherein the tape is made of a polyolefin material. 18. The method according to claim 2, wherein:
A method for manufacturing a semiconductor device, wherein an adhesive is applied to at least one entire surface. 19. The method according to claim 2, wherein the tape is a dicing tape used for dicing. 20. The semiconductor device according to claim 2, wherein the semiconductor substrate is a silicon substrate, and a semiconductor element that functions electrically is formed in advance on a main surface side of the semiconductor substrate. Production method. 21. The semiconductor substrate according to claim 2, wherein after the thinning step, the semiconductor substrate thinned in the thinning step is:
By cutting the tape of the outer peripheral portion of the semiconductor substrate,
A removing step of removing the processing guide from the semiconductor substrate in a state where the tape is adhered to the main surface side of the semiconductor substrate, and thereafter, on a back surface side opposite to the main surface side of the semiconductor substrate,
Attaching a second tape, supporting the semiconductor substrate on a second processing guide via the second tape, and supporting the semiconductor substrate, and thereafter, peeling off the tape on the main surface side of the semiconductor substrate. A main surface exposing step of exposing a main surface of the semiconductor substrate; and a dicing step of dicing from a main surface side of the semiconductor substrate supported by the second processing guide via the second tape. A method for manufacturing a semiconductor device, comprising: 22. The semiconductor device according to claim 2, further comprising, before the substrate supporting step, a groove forming step of forming a groove in advance from a main surface side of the semiconductor substrate, and the thin processing step starts from a back surface side of the semiconductor substrate. A method of manufacturing a semiconductor device, comprising: separating the semiconductor substrate into chips by thinning the semiconductor substrate until the groove is exposed. 23. The method according to claim 22, wherein the depth of the groove is larger than the thickness of the chip. 24. A processing guide for supporting an outer periphery of a semiconductor substrate via a tape, wherein the processing guide has an opening larger than an outer diameter of the semiconductor substrate and a predetermined portion for adhering an adhesive of the tape. A processing guide, comprising: a flat portion having an area; 25. The processing guide according to claim 24, wherein the processing guide is annular. 26. The processing guide according to claim 24, wherein the processing guide is made of a material that is attracted to a magnet. 27. A grinding apparatus in which a semiconductor substrate is fixed to a table, and a grindstone that moves relatively to the semiconductor substrate contacts and grinds a back surface opposite to a main surface of the semiconductor substrate. A grinding apparatus, comprising: a fixing means for fixing a processing guide for supporting the semiconductor substrate via a tape on an outer periphery of a table and separating the processing guide from a grinding stone so as not to contact the processing guide. 28. A grinding machine according to claim 27, wherein said fixing means is a magnet installed on an outer periphery of said table and attracting said machining guide. 29. A grinding machine according to claim 27, wherein said fixing means is a stay for fixing said processing guide from an outer periphery of said processing guide. 30. A polishing apparatus in which a semiconductor substrate is fixed to a table, and a polishing cloth which moves relatively to the semiconductor substrate contacts and polishes a back surface opposite to a main surface of the semiconductor substrate, A polishing apparatus, comprising: a fixing means for fixing a processing guide supporting the semiconductor substrate via a tape on an outer periphery of the table, and separating the processing guide from the polishing cloth so as not to contact the polishing guide. 31. A polishing apparatus according to claim 30, wherein said fixing means is a magnet installed on an outer periphery of said table and attracting said processing guide. 32. An apparatus according to claim 30, wherein said fixing means is a stay for fixing said processing guide from an outer periphery of said processing guide.