TW201830398A - Ternary content addressable memory device for software defined networking and method thereof - Google Patents

Ternary content addressable memory device for software defined networking and method thereof Download PDF

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TW201830398A
TW201830398A TW106104227A TW106104227A TW201830398A TW 201830398 A TW201830398 A TW 201830398A TW 106104227 A TW106104227 A TW 106104227A TW 106104227 A TW106104227 A TW 106104227A TW 201830398 A TW201830398 A TW 201830398A
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bits
bit
ternary content
addressed memory
search data
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TW106104227A
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吳安宇
陳庭笙
李鼎元
劉宗德
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國立臺灣大學
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Abstract

A ternary content addressable memory (TCAM) device for software defined networking and method thereof is disclosed. By storing M bits of each forwarding rule as a first part into a NAND-Type TCAM, and storing N bits of the same forwarding rule as a second part into a NOR-Type TCAM. Then comparing the M bits of a searching data to the first part to generate a first matching result, comparing the N bits of the searching data to the second part to generate a second matching result after the first matching result is match, and disabling comparing process of the second part when the first matching result is mismatched. The mechanism is help to improve the words length elasticity of the TCAM and to reduce power consumption.

Description

適用於軟體定義網路的三元內容定址記憶體裝置及其方法Ternary content addressed memory device and method thereof for software defined network

本發明涉及一種三元內容定址記憶體裝置及其方法,特別是將轉送規則分為兩部分,並以不同類型的三元內容定址記憶體進行過濾及搜尋之適用於軟體定義網路的三元內容定址記憶體裝置及其方法。The invention relates to a ternary content addressing memory device and a method thereof, in particular, a ternary suitable for a software-defined network, which divides a transfer rule into two parts and filters and searches with different types of ternary content-addressed memory. Content addressed memory device and method therefor.

近年來,隨著網路的普及與蓬勃發展,網路的流量與資訊量非常可觀,如何有效管理日益龐大的網路便成為各家廠商亟欲解決的問題之一。其中,又以軟體定義網路(Software Defined Networking, SDN)的技術最受矚目。In recent years, with the popularity and boom of the Internet, the amount of traffic and information on the Internet is very impressive. How to effectively manage the growing network has become one of the problems that various vendors are trying to solve. Among them, the technology of Software Defined Networking (SDN) is the most popular.

簡單來說,傳統的網路是由本地端的路由器或交換器各自管理自己本身的封包轉送規則,而軟體定義網路則是集中管理封包轉送規則,透過軟體定義網路可以在不更動硬體裝置的前提下,以集中管理的方式使用程式重新規劃網路,並且快速找出封包轉送的最佳路徑。在實際實施上,軟體定義網路基於「OpenFlow」的通信協定,其具有較長、可變的字串長度、隨意位元(Don’t care bit)可分散等特性。然而,這些特性難以適用於傳統固定字串長度的三元內容定址記憶體(Ternary Content Addressable Memory, TCAM)。In simple terms, the traditional network is managed by the local router or switch to manage its own packet forwarding rules, while the software-defined network is to centrally manage the packet forwarding rules. The software can define the network without changing the hardware device. Under the premise, use the program to centrally manage the network and quickly find the best path for packet forwarding. In practical implementation, the software definition network is based on the "OpenFlow" communication protocol, which has long, variable string length, and random dot (Don't care bit) dispersion. However, these characteristics are difficult to apply to the traditional fixed string length of Ternary Content Addressable Memory (TCAM).

除此之外,三元內容定址記憶體的耗電量非常的大,因為在一次的搜尋當中,對每一條匹配線(Math Line, ML)都先預先充電,接著再把比對錯誤的匹配線放電,由於比對錯誤的匹配線遠比正確的多,因此大多數的匹配線都被放電了,這造成了很大的功率消耗。所以傳統的三元內容定址記憶體除了在字串長度上具有彈性不佳的問題之外,還具有耗電量大的問題。In addition, the power consumption of the ternary content-addressed memory is very large, because in each search, each match line (Math Line, ML) is pre-charged, and then the matching error is matched. Line discharge, because the matching line of the error is much more accurate than correct, most of the matching lines are discharged, which results in a large power consumption. Therefore, the conventional ternary content-addressed memory has a problem of large power consumption in addition to the problem of poor elasticity in the length of the string.

有鑑於此,便有廠商提出降低匹配線的耗電之技術手段,藉由低耗電的匹配線來降低功率消耗。然而,此一方式仍然無法改變搜尋資料的字串長度,換而言之,字串長度仍然是短的且不可改變,具有字串長度的彈性不佳之問題。In view of this, some manufacturers have proposed to reduce the power consumption of the matching line, and reduce the power consumption by using a low-power matching line. However, this method still cannot change the string length of the search data. In other words, the string length is still short and unchangeable, and has the problem of poor elasticity of the string length.

綜上所述,可知先前技術中長期以來一直存在三元內容定址記憶體具有耗電及字串長度的彈性不佳之問題,因此實有必要提出改進的技術手段,來解決此一問題。In summary, it can be seen that in the prior art, there has been a long-standing problem that the ternary content addressed memory has poor power consumption and string length. Therefore, it is necessary to propose an improved technical means to solve this problem.

本發明揭露一種適用於軟體定義網路的三元內容定址記憶體裝置及其方法。The invention discloses a ternary content addressed memory device and a method thereof suitable for a software defined network.

首先,本發明揭露一種適用於軟體定義網路的三元內容定址記憶體裝置,此裝置包含:搜尋資料暫存器、預過濾模組、搜尋模組及管線暫存模組。其中,搜尋資料暫存器用以暫存二進制的搜尋資料,此搜尋資料由L個位元組成,其中,L為正整數;預過濾模組與搜尋資料暫存器電性連接,並且包含反及閘型(NAND-Type)三元內容定址記憶體儲存每一轉送規則的第一部分,所述第一部分為M個位元,以及將搜尋資料的M個位元與第一部分進行比對以輸出第一匹配結果,其中,M為正整數且M<L;搜尋模組與該搜尋資料暫存器電性連接,並且包含至少一反或閘型(NOR-Type)三元內容定址記憶體儲存每一轉送規則的一第二部分,該第二部分為N個位元,以及在第一匹配結果為匹配後,將搜尋資料的N個位元與同一轉送規則的第二部分進行比對以輸出第二匹配結果,其中,N為正整數且N=L-M;管線暫存模組電性連接在預過濾模組及搜尋模組之間,用以預充電降低能量延遲,並且以場效電晶體與搜尋模組電性連接,當第一匹配結果為不匹配時,場效電晶體導通放電至接地以禁能第二搜尋模組。First, the present invention discloses a ternary content addressed memory device suitable for a software-defined network. The device includes: a search data temporary register, a pre-filter module, a search module, and a pipeline temporary storage module. The search data register is used for temporarily storing binary search data, and the search data is composed of L bits, wherein L is a positive integer; the pre-filter module is electrically connected to the search data register, and includes a reverse A NAND-Type ternary content addressing memory stores a first portion of each forwarding rule, the first portion being M bits, and comparing the M bits of the search data with the first portion to output a a matching result, wherein M is a positive integer and M<L; the search module is electrically connected to the search data register, and includes at least one inverse OR gate type (NOR-Type) ternary content address memory storage per a second part of the forwarding rule, the second part is N bits, and after the first matching result is matched, the N bits of the search data are compared with the second part of the same forwarding rule to output The second matching result, wherein N is a positive integer and N=LM; the pipeline temporary storage module is electrically connected between the pre-filter module and the search module for pre-charging to reduce the energy delay, and the field effect transistor Electrically connected to the search module, First matching result is a mismatch, the field effect transistor is turned discharged to the ground to disable a second search module.

另外,本發明揭露一種適用於軟體定義網路的三元內容定址記憶體方法,其步驟包括:暫存二進制的搜尋資料,此搜尋資料由L個位元組成,其中,L為正整數;提供反及閘型(NAND-Type)三元內容定址記憶體儲存每一轉送規則的第一部分,所述第一部分為M個位元,其中,M為正整數且M<L;提供反或閘型(NOR-Type)三元內容定址記憶體儲存每一轉送規則的第二部分,所述第二部分為N個位元,其中,N為正整數且N=L-M;將搜尋資料的M個位元與第一部分進行比對以輸出第一匹配結果;在第一匹配結果為匹配後,進行預充電以降低能量延遲,並將搜尋資料的N個位元與第二部分進行比對以輸出第二匹配結果,當第一匹配結果為不匹配時,導通場效電晶體放電至接地以禁能搜尋資料的N個位元與第二部分之比對。In addition, the present invention discloses a ternary content addressed memory method suitable for a software-defined network, the steps comprising: temporarily storing binary search data, the search data consisting of L bits, wherein L is a positive integer; NAND-Type ternary content-addressed memory stores a first portion of each forwarding rule, the first portion being M bits, where M is a positive integer and M < L; providing an inverse or gate type (NOR-Type) ternary content addressing memory stores a second portion of each forwarding rule, the second portion being N bits, where N is a positive integer and N = LM; M bits of the search data will be searched The element is compared with the first part to output a first matching result; after the first matching result is matched, pre-charging is performed to reduce the energy delay, and the N bits of the search data are compared with the second part to output the first The result of the two matching, when the first matching result is a mismatch, the conductive field effect transistor is discharged to the ground to disable the comparison of the N bits of the search data with the second portion.

本發明所揭露之裝置與方法如上,與先前技術的差異在於本發明是透過反及閘型(NAND-Type)三元內容定址記憶體儲存每一轉送規則的M個位元作為第一部分,以及由反或閘型(NOR-Type)三元內容定址記憶體儲存同一轉送規則的N個位元作為第二部分,接著將搜尋資料的M個位元與第一部分進行比對以輸出第一匹配結果,並且在第一匹配結果為匹配後,將搜尋資料的N個位元與第二部分進行比對以輸出第二匹配結果,當第一匹配結果為不匹配時,禁能第二部分之比對。The apparatus and method disclosed in the present invention are as above, and the difference from the prior art is that the present invention stores the M bits of each transfer rule as the first part through the NAND-type ternary content addressed memory, and The N-bit content-addressed memory stores N bits of the same transfer rule as the second part, and then compares the M bits of the search data with the first part to output the first match. As a result, and after the first matching result is a match, the N bits of the search data are compared with the second part to output a second matching result, and when the first matching result is not matched, the second part is disabled. Comparison.

透過上述的技術手段,本發明可以達成提升三元內容定址記憶體在字串長度上的彈性及降低功耗之技術功效。Through the above technical means, the present invention can achieve the technical effect of improving the flexibility of the ternary content addressed memory in the string length and reducing the power consumption.

以下將配合圖式及實施例來詳細說明本發明之實施方式,藉此對本發明如何應用技術手段來解決技術問題並達成技術功效的實現過程能充分理解並據以實施。The embodiments of the present invention will be described in detail below with reference to the drawings and embodiments, so that the application of the technical means to solve the technical problems and achieve the technical effects can be fully understood and implemented.

在說明本發明所揭露之適用於軟體定義網路的三元內容定址記憶體裝置及其方法之前,先對本發明作簡要說明,本發明係改良三元內容定址記憶體,在其中的每一記憶單元中增加兩個電晶體以搭配遮罩單元進行禁能/致能的控制,並且使用管線暫存模組將轉送規則的搜尋分成兩階段,當第一階段的搜尋比對相匹配後再進行第二階段的搜尋比對,反之當第一階段的搜尋比對不匹配則不用進行第二階段的搜尋比對,最後根據在兩階段皆匹配的轉送規則轉送封包,藉由上述技術達成省電的功效,以及使用多組包含預過濾模組、管線暫存模組及搜尋模組的不同組合或至少其中之一來實現字串長度的調整,稍後將配合圖式做詳細說明。Before describing the ternary content addressed memory device and method thereof for a software-defined network disclosed in the present invention, the present invention is briefly described. The present invention is an improved ternary content addressed memory in which each memory Two transistors are added to the unit to control the disable/enable control with the mask unit, and the pipeline temporary storage module is used to divide the search of the transfer rule into two stages, and then the matching of the first stage is matched. The second stage of the search comparison, and vice versa, when the first stage of the search is not matched, the second stage search comparison is not needed, and finally the packet is forwarded according to the transfer rules matched in both stages, and the above technology is used to achieve power saving. The effect of the string and the use of multiple sets of pre-filter modules, pipeline buffer modules and search modules, or at least one of them to achieve string length adjustment, will be described in detail later with the schema.

以下配合圖式對本發明適用於軟體定義網路的三元內容定址記憶體裝置及其方法做進一步說明,請先參閱「第1圖」,「第1圖」為本發明適用於軟體定義網路的三元內容定址記憶體裝置的裝置方塊圖,此裝置包含:搜尋資料暫存器110、預過濾模組120、搜尋模組130及管線暫存模組140。其中,搜尋資料暫存器110用以暫存二進制的搜尋資料,此搜尋資料係由L個位元組成,其中,L為正整數。在實際實施上,L可為144至576,也就是說,搜尋資料可以是144位元至576位元。The following is a description of the ternary content-addressed memory device and the method thereof for the software-defined network according to the present invention. Please refer to "FIG. 1", "FIG. 1" for the software-defined network. The device block diagram of the ternary content addressing memory device includes: a search data register 110, a pre-filter module 120, a search module 130, and a pipeline temporary storage module 140. The search data register 110 is configured to temporarily store binary search data, and the search data is composed of L bits, where L is a positive integer. In practical implementation, L can be 144 to 576, that is, the search data can be 144 bits to 576 bits.

預過濾模組112與搜尋資料暫存器110電性連接,並且包含反及閘型(NAND-Type)三元內容定址記憶體儲存每一個轉送規則的第一部分,此第一部分為M個位元,以及將搜尋資料的M個位元與第一部分進行比對以輸出第一匹配結果,其中,M為正整數且M<L。在實際實施上,M可為9至36,也就是說,第一部分可為9位元至36位元。另外,反及閘型(NAND-Type)三元內容定址記憶體的位元與第一部分的位元相同,舉例來說,第一部分為9位元時,反及閘型(NAND-Type)三元內容定址記憶體同樣為9位元;第二部分為18位元時,反及閘型(NAND-Type)三元內容定址記憶體同樣為18位元,並以此類推。所述反及閘型(NAND-Type)三元內容定址記憶體的每一位元皆電性連接一個遮罩單元用以將相應的位元設為隨意位元(Don’t care bit),當遮罩單元設為邏輯1時,禁能相應位元之比對。The pre-filter module 112 is electrically connected to the search data register 110, and includes a NAND-type ternary content-addressed memory to store a first part of each transfer rule, the first part being M bits. And comparing the M bits of the search material with the first portion to output a first matching result, where M is a positive integer and M < L. In practical implementation, M can be 9 to 36, that is, the first portion can be 9 to 36 bits. In addition, the NAND-Type ternary content-addressed memory has the same bit as the first-part bit. For example, when the first part is 9-bit, the NAND-Type III The meta-content address memory is also 9 bits; when the second part is 18 bits, the NAND-type ternary content address memory is also 18 bits, and so on. Each bit of the NAND-type ternary content-addressed memory is electrically connected to a mask unit for setting the corresponding bit to a random bit (Don't care bit). When the mask unit is set to logic 1, the alignment of the corresponding bits is disabled.

搜尋模組113與搜尋資料暫存器110電性連接,並且包含反或閘型(NOR-Type)三元內容定址記憶體儲存每一個轉送規則的第二部分,此第二部分為N個位元,以及在第一匹配結果為匹配後,將搜尋資料的N個位元與同一轉送規則的第二部分進行比對以輸出第二匹配結果,其中,N為正整數且N=L-M。舉例來說,假設L為144、M為9,那麼N為「144-9=135」,在實際實施上,N可為135至540,也就是說,第二部分可為135位元至540位元。另外,反或閘型(NOR-Type)三元內容定址記憶體的位元與第二部分的位元相同,舉例來說,第二部分為135位元時,反或閘型(NOR-Type)三元內容定址記憶體同樣為135位元;第二部分為270位元時,反或閘型(NOR-Type)三元內容定址記憶體同樣為270位元,並以此類推。同樣地,反或閘型(NOR-Type)三元內容定址記憶體的每一位元皆電性連接一個遮罩單元用以將相應的位元設為隨意位元,當遮罩單元設為邏輯1時,禁能相應位元之比對。The search module 113 is electrically connected to the search data register 110, and includes a NOR-Type ternary content address memory to store a second portion of each transfer rule, and the second portion is N bits. And, after the first matching result is matched, comparing the N bits of the search data with the second portion of the same forwarding rule to output a second matching result, where N is a positive integer and N=LM. For example, if L is 144 and M is 9, then N is "144-9=135". In practice, N can be 135 to 540, that is, the second part can be 135 to 540. Bit. In addition, the bit of the NOR-Type ternary content-addressed memory is the same as the bit of the second part. For example, when the second part is 135-bit, the inverse or gate type (NOR-Type) The ternary content address memory is also 135 bits; when the second part is 270 bits, the NOR-Type ternary content address memory is also 270 bits, and so on. Similarly, each bit of the NOR-Type ternary content-addressed memory is electrically connected to a mask unit for setting the corresponding bit to a random bit when the mask unit is set to When the logic is 1, the comparison of the corresponding bits is disabled.

管線暫存模組140電性連接在預過濾模組120及搜尋模組130之間,用以預充電降低能量延遲,並且以一個場效電晶體與搜尋模組130電性連接,當第一匹配結果為不匹配時,所述場效電晶體會導通放電至接地以禁能第二搜尋模組130,如此一來,即可達到省電的目的。在實際實施上,管線暫存模組140還可增加突波抑制電路來避免突波(Glitch),稍後將配合圖式做詳細說明。The pipeline temporary storage module 140 is electrically connected between the pre-filter module 120 and the search module 130 for pre-charging to reduce the energy delay, and is electrically connected to the search module 130 by a field effect transistor. When the matching result is a mismatch, the field effect transistor is turned on to ground to disable the second search module 130, so that power saving can be achieved. In practical implementation, the pipeline temporary storage module 140 can also add a surge suppression circuit to avoid the glitch, which will be described in detail later with the drawings.

接著,請參閱「第2圖」,「第2圖」為本發明適用於軟體定義網路的三元內容定址記憶體方法的方法流程圖,其步驟包括:暫存二進制的搜尋資料,此搜尋資料由L個位元組成,其中,L為正整數(步驟210);提供反及閘型(NAND-Type)三元內容定址記憶體儲存每一轉送規則的第一部分,此第一部分為M個位元,其中,M為正整數且M<L(步驟220);提供反或閘型(NOR-Type)三元內容定址記憶體儲存每一轉送規則的第二部分,此第二部分為N個位元,其中,N為正整數且N=L-M(步驟230);將搜尋資料的M個位元與第一部分進行比對以輸出第一匹配結果(步驟240);在第一匹配結果為匹配後,進行預充電以降低能量延遲,並將搜尋資料的N個位元與第二部分進行比對以輸出第二匹配結果,當第一匹配結果為不匹配時,導通場效電晶體放電至接地以禁能搜尋資料的N個位元與第二部分之比對(步驟250)。透過上述步驟,即可透過反及閘型(NAND-Type)三元內容定址記憶體儲存每一轉送規則的M個位元作為第一部分,以及由反或閘型(NOR-Type)三元內容定址記憶體儲存同一轉送規則的N個位元作為第二部分,接著將搜尋資料的M個位元與第一部分進行比對以輸出第一匹配結果,並且在第一匹配結果為匹配後,將搜尋資料的N個位元與第二部分進行比對以輸出第二匹配結果,當第一匹配結果為不匹配時,禁能第二部分之比對。Next, please refer to "Fig. 2", which is a flowchart of a method for applying the ternary content addressed memory method of the software definition network, the steps including: temporarily storing binary search data, the search The data consists of L bits, where L is a positive integer (step 210); the NAND-Type ternary content addressed memory is stored to store the first part of each forwarding rule, the first part being M a bit, where M is a positive integer and M < L (step 220); providing a NOR-Type ternary content addressed memory storing a second portion of each forwarding rule, the second portion being N a bit, where N is a positive integer and N = LM (step 230); comparing the M bits of the search data with the first portion to output a first match result (step 240); After matching, pre-charging is performed to reduce the energy delay, and the N bits of the search data are compared with the second part to output a second matching result, and when the first matching result is not matched, the field-effect transistor discharge is turned on. N to the ground to disable the search for data Yuan and match (step 250) a second portion. Through the above steps, the M-bits of each transfer rule can be stored as the first part through the NAND-type ternary content-addressed memory, and the ternary content by the inverse OR gate type (NOR-Type) The address memory stores N bits of the same transfer rule as the second part, and then compares the M bits of the search data with the first part to output the first matching result, and after the first matching result is matched, The N bits of the search data are compared with the second part to output a second matching result, and when the first matching result is not matched, the comparison of the second part is disabled.

以下配合「第3圖」至「第8圖」以實施例的方式進行如下說明,請先參閱「第3圖」,「第3圖」為本發明的反及閘型(NAND-Type)三元內容定址記憶體之電路示意圖。在實際實施上,預過濾模組120使用反及閘型(NAND-Type)三元內容定址記憶體,其使用XNOR邏輯閘單元310(XNOR Cell)儲存資料,並且搭配遮罩單元320(Mask Cell)控制在隨意位元時不進行比對以節省電源。其中,XNOR邏輯閘單元310在內部使用兩個電晶體(S-PG)由遮罩單元320來控制,無須以外部拉線的方式進行控制。當遮罩單元320為邏輯1時,能夠控制電晶體(S-PG)關閉XNOR邏輯閘單元310,有助於減少漏電流。反之,當遮罩單元320為邏輯0時,XNOR邏輯閘單元310進行常規的運作。要補充說明的是,電晶體(S-PG)可以是N通道的金屬氧化物半導體場效電晶體(以下簡稱NMOS)或P通道的金屬氧化物半導體場效電晶體(以下簡稱PMOS)。The following is a description of the following examples in conjunction with "3" to "8". Please refer to "3" and "3" for the NAND-Type III of the present invention. A schematic diagram of the circuit of the meta-addressed memory. In practical implementation, the pre-filter module 120 uses a NAND-type ternary content-addressed memory, which uses XNOR logic gate unit 310 (XNOR Cell) to store data, and is matched with a mask unit 320 (Mask Cell). Control is not compared at random bits to save power. The XNOR logic gate unit 310 is internally controlled by the mask unit 320 using two transistors (S-PG), and does not need to be controlled by an external cable. When the mask unit 320 is logic 1, the transistor (S-PG) can be controlled to turn off the XNOR logic gate unit 310, helping to reduce leakage current. Conversely, when the mask unit 320 is logic 0, the XNOR logic gate unit 310 performs conventional operations. It should be additionally noted that the transistor (S-PG) may be an N-channel metal oxide semiconductor field effect transistor (hereinafter referred to as NMOS) or a P-channel metal oxide semiconductor field effect transistor (hereinafter referred to as PMOS).

請參閱「第4圖」,「第4圖」為本發明的反或閘型(NOR-Type)三元內容定址記憶體之電路示意圖。在實際實施上,搜尋模組130使用反或閘型(NOR-Type)三元內容定址記憶體,其使用XOR邏輯閘單元410(XOR Cell)儲存資料,並且搭配遮罩單元420控制在隨意位元時不進行比對以節省電源。其中,XOR邏輯閘單元410在內部同樣使用兩個電晶體(S-PG)由遮罩單元420來控制,無須以外部拉線的方式進行控制。當遮罩單元420為邏輯1時,能夠控制電晶體(S-PG)關閉XOR邏輯閘單元410,有助於減少漏電流。反之,當遮罩單元420為邏輯0時,XOR邏輯閘單元410進行常規的運作。同樣地,電晶體(S-PG)可以是NMOS或PMOS。Please refer to "Fig. 4", which is a circuit diagram of the NOR-Type ternary content addressed memory of the present invention. In practical implementation, the search module 130 uses an inverse OR gate type (NOR-Type) ternary content addressing memory, which uses XOR logic gate unit 410 (XOR Cell) to store data, and is controlled with random mask unit 420 in random bits. Do not compare the yuan to save power. The XOR logic gate unit 410 is internally controlled by the mask unit 420 using two transistors (S-PG) as well, and does not need to be controlled by an external cable. When the mask unit 420 is logic 1, the transistor (S-PG) can be controlled to turn off the XOR logic gate unit 410, helping to reduce leakage current. Conversely, when the mask unit 420 is logic 0, the XOR logic gate unit 410 performs conventional operations. Likewise, the transistor (S-PG) can be either NMOS or PMOS.

如「第5圖」所示意,「第5圖」為本發明的預過濾模組之電路示意圖。前面提到,預過濾模組120使用反及閘型(NAND-Type)三元內容定址記憶體,其使用XNOR邏輯閘單元310儲存資料。當MLPre為邏輯1時,透過PMOS P2預先充電至高電位,搜尋資料傳送至XNOR邏輯閘單元310,並且NMOS N1關閉以避免短路至接地。當MLPre為邏輯0時,PMOS P2停止為充電。假設輸入的資料與儲存的轉送規則相互匹配,那麼,匹配線將放電至接地。遮罩單元320可以總是導通預過濾模組120的通道電晶體而不管XNOR邏輯閘單元310的匹配結果。As shown in "figure 5", "figure 5" is a circuit diagram of the pre-filter module of the present invention. As previously mentioned, the pre-filter module 120 uses NAND-type ternary content addressed memory that uses XNOR logic gate unit 310 to store data. When MLPre is logic 1, Precharged to a high potential through PMOS P2, the search data is transferred to XNOR logic gate unit 310, and NMOS N1 is turned off to avoid short circuit to ground. When MLPre is logic 0, PMOS P2 stops charging. Assuming that the input data matches the stored transfer rules, the match line will be discharged to ground. The mask unit 320 can always turn on the channel transistor of the pre-filter module 120 regardless of the matching result of the XNOR logic gate unit 310.

請參閱「第6圖」,「第6圖」為本發明的管線暫存模組之電路示意圖。由於使用OpenFlow的路由器或交換器,其隨意位元可能是不連續的,即:出現在預過濾模組120,所以本發明使用反及閘型(NAND-Type)三元內容定址記憶體(NAND-TCAM)取代反及閘型(NAND-Type)內容定址記憶體(NAND-CAM),並且可在一個時間週期完成搜尋。因此,為了提高吞吐量(Throughput),本發明在預過濾模組120及搜尋模組130之間加入管線暫存模組140,並且可以將搜尋分成二階段。假設在第一階段輸出的第一匹配結果為匹配時,為邏輯0,並且第一匹配結果會先儲存在管線暫存模組140內的左側再傳輸至右側,PMOS P3將導通以在後續的時間週期預先充電。反之,假設第一匹配結果為不匹配,那麼,PMOS P3將關閉直到預過濾模組120輸出的第一匹配結果再次成為匹配為止。其中,PMOS P3是由控制,且。另外,由於基體效應(Body Effect),NMOS N2的閾值電壓大於NMOS N3,因為管線暫存模組140的傳遞延遲,第一匹配結果會比MLPre慢到達,為了避免突波導致不必要的功率消耗,可透過突波抑制電路610使MLPre電性連接NMOS N2且Match 電性連接至NMOS N3。特別要說明的是,倘若NMOS N2和N3接反,因為NMOS N2放電速度比NMOS N3慢,會因為NMOS N2放電較慢而導致不必要的功率消耗。Please refer to "Figure 6", "Figure 6" is a circuit diagram of the pipeline temporary storage module of the present invention. Because of the use of OpenFlow routers or switches, the random bits may be discontinuous, ie, appear in the pre-filter module 120, so the present invention uses NAND-Type ternary content addressed memory (NAND) -TCAM) replaces NAND-Type content-addressed memory (NAND-CAM) and can complete the search in one time period. Therefore, in order to improve throughput (Throughput), the present invention adds a pipeline temporary storage module 140 between the pre-filter module 120 and the search module 130, and can divide the search into two stages. Assuming that the first match result output in the first phase is a match, It is a logic 0, and the first matching result is first stored in the left side of the pipeline temporary storage module 140 and then transmitted to the right side, and the PMOS P3 will be turned on to be pre-charged in a subsequent time period. On the contrary, assuming that the first matching result is a mismatch, the PMOS P3 will be turned off until the first matching result output by the pre-filtering module 120 becomes a match again. Among them, PMOS P3 is composed of Control, and . In addition, due to the body effect, the threshold voltage of the NMOS N2 is greater than that of the NMOS N3. Because of the transfer delay of the pipeline temporary storage module 140, the first matching result is slower than the MLPre, in order to avoid unnecessary power consumption caused by the surge. The MLPre can be electrically connected to the NMOS N2 through the surge suppression circuit 610 and the Match is electrically connected to the NMOS N3. In particular, if NMOS N2 and N3 are reversed, because NMOS N2 discharges at a slower rate than NMOS N3, Unnecessary power consumption due to slower NMOS N2 discharge.

請參閱「第7圖」,「第7圖」為本發明的搜尋模組之電路示意圖。在實際實施上,搜尋模組130包含具有時脈閘控的匹配線感測放大器710(ML Sense Amplifier, MLSA),假設匹配發生在第一階段(即第一匹配結果為匹配),ML_NOR將被預先充電至VDD,同時,匹配線感測放大器710將被導通且ML_SENSE將被設為邏輯1。假設搜尋模組130輸出的第二匹配結果為不匹配,那麼,匹配線感測放大器710會感測到不匹配的狀況,並且一旦ML_NOR放電至臨界電壓(|Vtp |)時,將下拉ML_SENSE至接地。另一方面,假設在第一階段不匹配時,那麼,匹配線感測放大器710不會被導通以減少不必要的功率消耗。換句話說,不同於反及閘型(NAND-Type)三元內容定址記憶體在所有位元皆匹配時下拉匹配線,反或閘型(NOR-Type)三元內容定址記憶體會在任一個位元不匹配的情況下放電匹配線至接地。其中,遮罩單元420可關閉搜尋模組130的下拉電晶體。Please refer to "Figure 7", "Figure 7" is a circuit diagram of the search module of the present invention. In practical implementation, the search module 130 includes a ML Sense Amplifier (MLSA) with clock gating. Assuming that the matching occurs in the first phase (ie, the first matching result is a match), the ML_NOR will be Precharged to VDD while the match line sense amplifier 710 will be turned on and ML_SENSE will be set to logic 1. Assuming that the second matching result output by the search module 130 is a mismatch, the match line sense amplifier 710 senses a mismatch condition, and once ML_NOR is discharged to the threshold voltage (| Vtp |), ML_SENSE is pulled down to Ground. On the other hand, assuming that the first phase does not match, then the match line sense amplifier 710 will not be turned on to reduce unnecessary power consumption. In other words, unlike the NAND-Type ternary content-addressed memory, the match line is pulled down when all the bits match, and the NOR-Type ternary content-addressed memory is at any position. Discharge the match line to ground with a mismatch. The mask unit 420 can turn off the pull-down transistor of the search module 130.

請參閱「第8圖」,「第8圖」為應用本發明適用不同字串長度之電路示意圖。其中,可清楚看到具有四個預過濾模組120、四個搜尋模組130及四個管線暫存模組140,在實際實施上,可以分為四組,每一組皆具有一個預過濾模組120、一個搜尋模組130及一個管線暫存模組140用以比對每一個144位元以內的轉送規則。甚至,這四組可組合成兩組以比對每一個288(144 * 2)位元以內的轉送規則,以及這四組可組合成一組以比對每一個576(144 * 4)位元以內的轉送規則,實現適用於不同字串長度的情況。具體來說,其具有三個模式,模式一代表四組分別比對來自搜尋資料暫存器110的四個獨立的144位元的轉送規則,並且使用位移暫存器810將輸出結果位移至ML_Out。在模式二時,第一組及第二組成一組,以及第三組及第四組組成另一組,所以模式二可比對288位元以內的轉送規則,預過濾模組120比對轉送規則的前18(9 * 2)位元,並且於匹配時再由搜尋模組130比對轉送規則的後270(135 * 2)位元。在模式三時,將四組組合成一組,用以比對每一個576位元以內的轉送規則,預過濾模組120比對前36位元,並且於匹配時再由搜尋模組130比對轉送規則的後540位元。其組合方式可如「第8圖」所示意透過多個多工器及邏輯閘實現,並且透過多工器設定使用的模式,以模式二為例,訊號經過的導線、多工器及邏輯閘如「第8圖」以粗體黑線進行示意。特別要說明的是,為了同時處理多個路由表,這四組還可以視為一個單位(576位元)並擴充成多個單位(例如:64個)形成三元內容定址記憶體陣列(例如:576 * 64),因此,在模式一時可比對256 * 144位元、在模式二可比對128 * 288位元以及在模式三可比對64 * 576位元。Please refer to Figure 8 and Figure 8 is a schematic diagram of a circuit for applying different string lengths according to the present invention. Among them, it can be clearly seen that there are four pre-filter modules 120, four search modules 130 and four pipeline temporary storage modules 140. In practice, they can be divided into four groups, each of which has a pre-filter. The module 120, a search module 130 and a pipeline temporary storage module 140 are used to compare the transfer rules within each 144 bits. Even these four groups can be combined into two groups to compare the transfer rules within each 288 (144 * 2) bits, and the four groups can be combined into one group to compare each 576 (144 * 4) bits. The transfer rule implements the case for different string lengths. Specifically, it has three modes, mode one represents four sets of transfer rules for comparing four independent 144-bits from the search data register 110, and uses the displacement register 810 to shift the output to ML_Out. . In mode 2, the first group and the second group, and the third group and the fourth group form another group, so the mode 2 can compare the transfer rules within 288 bits, and the pre-filter module 120 compares the transfer rules. The first 18 (9 * 2) bits, and the matching module 301 then compares the last 270 (135 * 2) bits of the forwarding rule. In mode 3, the four groups are combined into one group for comparing the transfer rules within 576 bits, and the pre-filter module 120 compares the first 36 bits, and is matched by the search module 130 when matching. The last 540 bits of the forwarding rule. The combination can be realized by multiple multiplexers and logic gates as shown in Figure 8, and the mode used by the multiplexer is set. In the mode 2, the wires, multiplexers and logic gates through which the signals pass are used. For example, "Fig. 8" is indicated by a bold black line. In particular, in order to process multiple routing tables simultaneously, the four groups can also be treated as one unit (576 bits) and expanded into multiple units (for example: 64) to form a ternary content addressed memory array (eg :576 * 64), therefore, in mode one, 256 * 144 bits can be compared, in mode two can be compared to 128 * 288 bits, and in mode three can be compared to 64 * 576 bits.

綜上所述,可知本發明與先前技術之間的差異在於透過反及閘型(NAND-Type)三元內容定址記憶體儲存每一轉送規則的M個位元作為第一部分,以及由反或閘型(NOR-Type)三元內容定址記憶體儲存同一轉送規則的N個位元作為第二部分,接著將搜尋資料的M個位元與第一部分進行比對以輸出第一匹配結果,並且在第一匹配結果為匹配後,將搜尋資料的N個位元與第二部分進行比對以輸出第二匹配結果,當第一匹配結果為不匹配時,禁能第二部分之比對,藉由此一技術手段可以解決先前技術所存在的問題,進而達成提升三元內容定址記憶體在字串長度上的彈性及降低功耗之技術功效。In summary, it can be seen that the difference between the present invention and the prior art is that the NAND-Type ternary content addressed memory stores M bits of each transfer rule as the first part, and The gate type (NOR-Type) ternary content address memory stores N bits of the same transfer rule as the second part, and then compares the M bits of the search data with the first part to output the first matching result, and After the first matching result is a match, the N bits of the search data are compared with the second part to output a second matching result, and when the first matching result is not matched, the comparison of the second part is disabled. The technical problem can be solved by the prior art, and the technical effect of improving the flexibility of the ternary content-addressed memory in the string length and reducing the power consumption is achieved.

雖然本發明以前述之實施例揭露如上,然其並非用以限定本發明,任何熟習相像技藝者,在不脫離本發明之精神和範圍內,當可作些許之更動與潤飾,因此本發明之專利保護範圍須視本說明書所附之申請專利範圍所界定者為準。While the present invention has been described above in the foregoing embodiments, it is not intended to limit the invention, and the invention may be modified and modified without departing from the spirit and scope of the invention. The scope of patent protection shall be subject to the definition of the scope of the patent application attached to this specification.

110‧‧‧搜尋資料暫存器110‧‧‧Search data register

120‧‧‧預過濾模組120‧‧‧Pre-filter module

130‧‧‧搜尋模組130‧‧‧Search Module

140‧‧‧管線暫存模組140‧‧‧ Pipeline temporary storage module

310‧‧‧XNOR邏輯閘單元310‧‧‧XNOR logic gate unit

320‧‧‧遮罩單元320‧‧‧Mask unit

410‧‧‧XOR邏輯閘單元410‧‧‧XOR logic gate unit

420‧‧‧遮罩單元420‧‧‧Mask unit

610‧‧‧突波抑制電路610‧‧‧ Surge suppression circuit

710‧‧‧匹配線感測放大器710‧‧‧Matching line sense amplifier

810‧‧‧位移暫存器810‧‧‧Displacement register

步驟210‧‧‧暫存二進制的一搜尋資料,該搜尋資料由L個位元組成,其中,L為正整數Step 210‧‧‧ temporarily stores a search data of binary, the search data is composed of L bits, wherein L is a positive integer

步驟220‧‧‧提供至少一反及閘型(NAND-Type)三元內容定址記憶體儲存每一轉送規則的一第一部分,該第一部分為M個位元,其中,M為正整數且M<LStep 220 ‧ ‧ provides at least one NAND-Type ternary content addressed memory storing a first portion of each transfer rule, the first portion being M bits, where M is a positive integer and M <L

步驟230‧‧‧提供至少一反或閘型(NOR-Type)三元內容定址記憶體儲存每一轉送規則的一第二部分,該第二部分為N個位元,其中,N為正整數且N=L-MStep 230‧ ‧ provides at least one NOR-Type ternary content addressing memory to store a second portion of each forwarding rule, the second portion being N bits, where N is a positive integer And N=LM

步驟240‧‧‧將該搜尋資料的M個位元與該第一部分進行比對以輸出一第一匹配結果Step 240‧‧‧ align the M bits of the search data with the first portion to output a first matching result

步驟250‧‧‧在該第一匹配結果為匹配後,進行預充電以降低能量延遲,並將該搜尋資料的N個位元與該第二部分進行比對以輸出一第二匹配結果,當該第一匹配結果為不匹配時,導通一場效電晶體放電至接地以禁能該搜尋資料的N個位元與該第二部分之比對Step 250‧‧‧ After the first matching result is a match, pre-charging is performed to reduce the energy delay, and the N bits of the search data are compared with the second part to output a second matching result. When the first matching result is a mismatch, turning on a potential transistor discharge to ground to disable the comparison between the N bits of the search data and the second portion

第1圖為本發明適用於軟體定義網路的三元內容定址記憶體裝置的裝置方塊圖。 第2圖為本發明適用於軟體定義網路的三元內容定址記憶體方法的方法流程圖。 第3圖為本發明的反及閘型(NAND-Type)三元內容定址記憶體之電路示意圖。 第4圖為本發明的反或閘型(NOR-Type)三元內容定址記憶體之電路示意圖。 第5圖為本發明的預過濾模組之電路示意圖。 第6圖為本發明的管線暫存模組之電路示意圖。 第7圖為本發明的搜尋模組之電路示意圖。 第8圖為應用本發明適用不同字串長度之電路示意圖。1 is a block diagram of a device for applying a ternary content addressed memory device to a software-defined network. 2 is a flow chart of a method for applying a ternary content addressed memory method of a software-defined network according to the present invention. FIG. 3 is a circuit diagram of the NAND-type ternary content addressed memory of the present invention. Figure 4 is a circuit diagram of the inverse OR gate type (NOR-Type) ternary content addressed memory of the present invention. Figure 5 is a circuit diagram of the pre-filter module of the present invention. Figure 6 is a circuit diagram of the pipeline temporary storage module of the present invention. Figure 7 is a circuit diagram of the search module of the present invention. Figure 8 is a circuit diagram showing the application of the present invention to different string lengths.

Claims (10)

一種適用於軟體定義網路的三元內容定址記憶體裝置,該裝置包含: 一搜尋資料暫存器,用以暫存二進制的一搜尋資料,該搜尋資料由L個位元組成,其中,L為正整數; 一預過濾模組,該預過濾模組與該搜尋資料暫存器電性連接,並且包含至少一反及閘型(NAND-Type)三元內容定址記憶體儲存每一轉送規則的一第一部分,該第一部分為M個位元,以及將該搜尋資料的M個位元與該第一部分進行比對以輸出一第一匹配結果,其中,M為正整數且M<L; 一搜尋模組,該搜尋模組與該搜尋資料暫存器電性連接,並且包含至少一反或閘型(NOR-Type)三元內容定址記憶體儲存每一轉送規則的一第二部分,該第二部分為N個位元,以及在該第一匹配結果為匹配後,將該搜尋資料的N個位元與同一該轉送規則的該第二部分進行比對以輸出一第二匹配結果,其中,N為正整數且N=L-M;以及 一管線暫存模組,該管線暫存模組電性連接在該預過濾模組及該搜尋模組之間,用以預充電降低能量延遲,並且以一場效電晶體與該搜尋模組電性連接,當該第一匹配結果為不匹配時,該場效電晶體導通放電至接地以禁能該第二搜尋模組。A ternary content addressed memory device suitable for a software-defined network, the device comprising: a search data register for temporarily storing a binary search data, the search data consisting of L bits, wherein, L a pre-filter module, the pre-filter module is electrically connected to the search data register, and includes at least one NAND-type ternary content address memory to store each transfer rule. a first portion, the first portion is M bits, and the M bits of the search data are compared with the first portion to output a first matching result, where M is a positive integer and M < L; a search module, the search module is electrically connected to the search data register, and includes at least one NOR-Type ternary content address memory to store a second portion of each transfer rule. The second part is N bits, and after the first matching result is matched, the N bits of the search data are compared with the second part of the same forwarding rule to output a second matching result. Where N is a positive integer N=LM; and a pipeline temporary storage module electrically connected between the pre-filter module and the search module for pre-charging to reduce energy delay, and The search module is electrically connected. When the first matching result is a mismatch, the field effect transistor is electrically discharged to ground to disable the second search module. 根據申請專利範圍第1項之適用於軟體定義網路的三元內容定址記憶體裝置,其中所述反及閘型(NAND-Type)三元內容定址記憶體為M個位元,所述反或閘型(NOR-Type)三元內容定址記憶體為N個位元,其中,每一位元皆電性連接一遮罩單元用以將相應的位元設為隨意位元(Don’t care bit)。A ternary content addressed memory device for a software-defined network according to the first aspect of the patent application, wherein the NAND-type ternary content addressed memory is M bits, and the inverse Or NOR-Type ternary content-addressed memory is N bits, wherein each bit is electrically connected to a mask unit to set the corresponding bit to a random bit (Don't Care bit). 根據申請專利範圍第2項之適用於軟體定義網路的三元內容定址記憶體裝置,其中該遮罩單元設為邏輯1時,禁能相應的該位元之比對。According to the ternary content-addressed memory device applicable to the software-defined network according to Item 2 of the patent application scope, when the mask unit is set to logic 1, the corresponding alignment of the bit is disabled. 根據申請專利範圍第1項之適用於軟體定義網路的三元內容定址記憶體裝置,其中該搜尋資料可以是144位元至576位元,所述反及閘型(NAND-Type)三元內容定址記憶體可以是9位元至36位元,所述反或閘型(NOR-Type)三元內容定址記憶體可以是135位元至540位元。A ternary content addressed memory device suitable for a software-defined network according to claim 1 of the scope of the patent application, wherein the search data may be 144-bit to 576-bit, and the NAND-Type ternary The content-addressed memory may be 9-bit to 36-bit, and the NOR-Type ternary content-addressed memory may be 135-bit to 540-bit. 根據申請專利範圍第1項之適用於軟體定義網路的三元內容定址記憶體裝置,其中該管線暫存模組包含一突波抑制電路以防止突波。A ternary content addressed memory device for a software-defined network according to the first aspect of the patent application, wherein the pipeline temporary storage module includes a surge suppression circuit to prevent glitch. 一種適用於軟體定義網路的三元內容定址記憶體方法,其步驟包括: 暫存二進制的一搜尋資料,該搜尋資料由L個位元組成,其中,L為正整數; 提供至少一反及閘型(NAND-Type)三元內容定址記憶體儲存每一轉送規則的一第一部分,該第一部分為M個位元,其中,M為正整數且M<L; 提供至少一反或閘型(NOR-Type)三元內容定址記憶體儲存每一轉送規則的一第二部分,該第二部分為N個位元,其中,N為正整數且N=L-M; 將該搜尋資料的M個位元與該第一部分進行比對以輸出一第一匹配結果;以及 在該第一匹配結果為匹配後,進行預充電以降低能量延遲,並將該搜尋資料的N個位元與該第二部分進行比對以輸出一第二匹配結果,當該第一匹配結果為不匹配時,導通一場效電晶體放電至接地以禁能該搜尋資料的N個位元與該第二部分之比對。A ternary content addressed memory method suitable for a software-defined network, the steps comprising: temporarily storing a search data of a binary, the search data consisting of L bits, wherein L is a positive integer; providing at least one inverse A NAND-Type ternary content addressed memory stores a first portion of each forwarding rule, the first portion being M bits, where M is a positive integer and M < L; providing at least one inverse or gate type (NOR-Type) ternary content-addressed memory stores a second portion of each forwarding rule, the second portion being N bits, where N is a positive integer and N=LM; M of the search data Comparing the bit with the first portion to output a first matching result; and after the first matching result is a match, performing precharging to reduce the energy delay, and comparing the N bits of the search data with the second Partially aligning to output a second matching result, when the first matching result is a mismatch, turning on a potential transistor discharge to ground to disable the comparison of the N bits of the search data with the second portion . 根據申請專利範圍第6項之適用於軟體定義網路的三元內容定址記憶體方法,其中所述反及閘型(NAND-Type)三元內容定址記憶體為M個位元,所述反或閘型(NOR-Type)三元內容定址記憶體為N個位元,其中,每一位元皆電性連接一遮罩單元用以將相應的位元設為隨意位元(Don’t care bit)。The ternary content addressed memory method applicable to a software-defined network according to claim 6 of the scope of the patent application, wherein the NAND-type ternary content addressed memory is M bits, and the inverse Or NOR-Type ternary content-addressed memory is N bits, wherein each bit is electrically connected to a mask unit to set the corresponding bit to a random bit (Don't Care bit). 根據申請專利範圍第7項之適用於軟體定義網路的三元內容定址記憶體方法,其中該遮罩單元設為邏輯1時,禁能相應的該位元之比對。The ternary content addressed memory method applicable to a software-defined network according to item 7 of the patent application scope, wherein when the mask unit is set to logic 1, the corresponding alignment of the bits is disabled. 根據申請專利範圍第6項之適用於軟體定義網路的三元內容定址記憶體方法,其中該搜尋資料可以是144位元至576位元,所述反及閘型(NAND-Type)三元內容定址記憶體可以是9位元至36位元,所述反或閘型(NOR-Type)三元內容定址記憶體可以是135位元至540位元。The ternary content addressed memory method applicable to a software-defined network according to claim 6 of the scope of the patent application, wherein the search data may be 144-bit to 576-bit, and the NAND-Type ternary The content-addressed memory may be 9-bit to 36-bit, and the NOR-Type ternary content-addressed memory may be 135-bit to 540-bit. 根據申請專利範圍第6項之適用於軟體定義網路的三元內容定址記憶體方法,其中該進行預充電以降低能量延遲的步驟更包含以一突波抑制電路以防止突波。The ternary content addressed memory method applicable to a software-defined network according to claim 6 of the scope of the patent application, wherein the step of precharging to reduce the energy delay further comprises a surge suppression circuit to prevent glitch.
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11875850B2 (en) 2022-04-27 2024-01-16 Macronix International Co., Ltd. Content addressable memory device, content addressable memory cell and method for data searching with a range or single-bit data

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