TW201509242A - Transparent-circuit-board manufacturing method - Google Patents

Transparent-circuit-board manufacturing method Download PDF

Info

Publication number
TW201509242A
TW201509242A TW103115999A TW103115999A TW201509242A TW 201509242 A TW201509242 A TW 201509242A TW 103115999 A TW103115999 A TW 103115999A TW 103115999 A TW103115999 A TW 103115999A TW 201509242 A TW201509242 A TW 201509242A
Authority
TW
Taiwan
Prior art keywords
adhesion layer
temporary fixing
transparent
support
low
Prior art date
Application number
TW103115999A
Other languages
Chinese (zh)
Inventor
Daisuke Uenda
Akira Suzuki
Original Assignee
Nitto Denko Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nitto Denko Corp filed Critical Nitto Denko Corp
Publication of TW201509242A publication Critical patent/TW201509242A/en

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J179/00Adhesives based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen, with or without oxygen, or carbon only, not provided for in groups C09J161/00 - C09J177/00
    • C09J179/04Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
    • C09J179/08Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00Layered products comprising a layer of synthetic resin
    • B32B27/28Layered products comprising a layer of synthetic resin comprising synthetic resins not wholly covered by any one of the sub-groups B32B27/30 - B32B27/42
    • B32B27/281Layered products comprising a layer of synthetic resin comprising synthetic resins not wholly covered by any one of the sub-groups B32B27/30 - B32B27/42 comprising polyimides
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B3/00Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar shape; Layered products comprising a layer having particular features of form
    • B32B3/02Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar shape; Layered products comprising a layer having particular features of form characterised by features of form at particular places, e.g. in edge regions
    • B32B3/04Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar shape; Layered products comprising a layer having particular features of form characterised by features of form at particular places, e.g. in edge regions characterised by at least one layer folded at the edge, e.g. over another layer ; characterised by at least one layer enveloping or enclosing a material
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B7/00Layered products characterised by the relation between layers; Layered products characterised by the relative orientation of features between layers, or by the relative values of a measurable parameter between layers, i.e. products comprising layers having different physical, chemical or physicochemical properties; Layered products characterised by the interconnection of layers
    • B32B7/04Interconnection of layers
    • B32B7/05Interconnection of layers the layers not being connected over the whole surface, e.g. discontinuous connection or patterned connection
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B7/00Layered products characterised by the relation between layers; Layered products characterised by the relative orientation of features between layers, or by the relative values of a measurable parameter between layers, i.e. products comprising layers having different physical, chemical or physicochemical properties; Layered products characterised by the interconnection of layers
    • B32B7/04Interconnection of layers
    • B32B7/06Interconnection of layers permitting easy separation
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B7/00Layered products characterised by the relation between layers; Layered products characterised by the relative orientation of features between layers, or by the relative values of a measurable parameter between layers, i.e. products comprising layers having different physical, chemical or physicochemical properties; Layered products characterised by the interconnection of layers
    • B32B7/04Interconnection of layers
    • B32B7/12Interconnection of layers using interposed adhesives or interposed materials with bonding properties
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/10Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • C08G73/1042Copolyimides derived from at least two different tetracarboxylic compounds or two different diamino compounds
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/10Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • C08G73/1046Polyimides containing oxygen in the form of ether bonds in the main chain
    • C08G73/105Polyimides containing oxygen in the form of ether bonds in the main chain with oxygen only in the diamino moiety
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/10Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • C08G73/1075Partially aromatic polyimides
    • C08G73/1082Partially aromatic polyimides wholly aromatic in the tetracarboxylic moiety
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/007Manufacture or processing of a substrate for a printed circuit board supported by a temporary or sacrificial carrier
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2307/00Properties of the layers or laminate
    • B32B2307/40Properties of the layers or laminate having particular optical properties
    • B32B2307/412Transparent
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2307/00Properties of the layers or laminate
    • B32B2307/70Other properties
    • B32B2307/748Releasability
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2457/00Electrical equipment
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2457/00Electrical equipment
    • B32B2457/08PCBs, i.e. printed circuit boards
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/03Use of materials for the substrate
    • H05K1/0386Paper sheets
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/01Dielectrics
    • H05K2201/0104Properties and characteristics in general
    • H05K2201/0108Transparent
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/16Inspection; Monitoring; Aligning
    • H05K2203/163Monitoring a manufacturing process

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Polymers & Plastics (AREA)
  • Medicinal Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Liquid Crystal (AREA)
  • Joining Of Glass To Other Materials (AREA)
  • Structure Of Printed Boards (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Laminated Bodies (AREA)

Abstract

This invention provides a transparent-circuit-board manufacturing method that makes it possible to perform desired patterning in a clean fashion while reducing outgassing due to a temporary affixing material even if a high-temperature treatment with a temperature of 200 DEG C or more, for example, is performed. This invention is a transparent-circuit-board manufacturing method that includes the following steps: a laminate-preparation step in which a laminate comprising a transparent workpiece temporarily affixed to a support with a temporary affixing material interposed therebetween is prepared; a patterning step in which patterning that includes a heat treatment using a temperature of 200 DEG C or more is used to form a pattern on the transparent workpiece, yielding a transparent circuit board; and a separation step in which the transparent circuit board is separated from the temporary affixing material. If the temporary affixing material is subjected to simultaneous differential thermal and thermogravimetric measurement with the temperature raised to 400 DEG C at a rate of 5 DEG C/min, said temporary affixing material exhibits a weight decrease percentage of less than 1% at temperatures less than or equal to 200 DEG C.

Description

透明電路基板之製造方法 Transparent circuit substrate manufacturing method

本發明係關於一種透明電路基板之製造方法。 The present invention relates to a method of manufacturing a transparent circuit substrate.

近年來,作為電子裝置或顯示器中之構件,例如開發有TFT(驅動電路)、濾色器、觸控面板之電路基板等輕量且具有耐衝擊性、且薄型的玻璃基板。 In recent years, as a member of an electronic device or a display, for example, a glass substrate which is lightweight, has impact resistance, and is thin, such as a circuit board of a TFT (drive circuit), a color filter, and a touch panel, has been developed.

然而,隨著玻璃基板之薄型化之發展,有作為加工對象之玻璃板之強度降低或產生彎曲而於製造過程中操作變困難、或作業效率降低的情況。作為用以應對上述情況之玻璃基板之製造方法,提出有如下技術:將薄壁玻璃基板經由接著劑固定於作為補強材之支持基板後,將透明電極膜成膜於薄壁玻璃基板之表面(專利文獻1)。 However, as the thickness of the glass substrate is reduced, the strength of the glass sheet to be processed is lowered or bent, which makes it difficult to operate during the manufacturing process or the work efficiency is lowered. As a method for producing a glass substrate to cope with the above, a technique is disclosed in which a thin glass substrate is fixed to a support substrate as a reinforcing material via an adhesive, and a transparent electrode film is formed on the surface of the thin glass substrate ( Patent Document 1).

[先前技術文獻] [Previous Technical Literature] [專利文獻] [Patent Literature]

[專利文獻1]日本專利特開2010-285324號公報 [Patent Document 1] Japanese Patent Laid-Open Publication No. 2010-285324

於上述技術中,使薄壁玻璃基板、作為暫時固定材之接著劑、及支持基板一體地進行圖案形成,因此接著劑亦受到此時之加熱處理之影響。該接著劑雖具有耐熱性,但並不充分,若無法無視加熱處理之影響,則有時產生來自接著劑之釋氣而污染玻璃基板或無法形成所需之圖案。 In the above technique, the thin-walled glass substrate, the adhesive as the temporary fixing material, and the support substrate are integrally patterned, and therefore the adhesive is also affected by the heat treatment at this time. Although the adhesive has heat resistance, it is not sufficient. If the influence of the heat treatment cannot be ignored, the outgas of the adhesive may be contaminated to contaminate the glass substrate or the desired pattern may not be formed.

本發明係解決製造透明電路基板時所發現之上述課題者,其目的在於提供一種即便進行例如200℃以上之高溫處理,亦可減少來自暫時固定材之釋氣之產生、並且可乾淨地實施所需之圖案加工的透明電路基板之製造方法。 The present invention has been made in view of the above problems found in the production of a transparent circuit board, and an object of the invention is to provide a method for reducing the generation of outgassing from a temporary fixing material even when subjected to a high temperature treatment of, for example, 200 ° C or higher. A method of manufacturing a transparent circuit substrate that requires pattern processing.

本案發明者等人進行努力研究,結果發現,藉由採用下述構成可達成上述目的,從而完成本發明。 As a result of intensive studies, the inventors of the present invention have found that the above object can be attained by the following constitution, and the present invention has been completed.

本發明係一種透明電路基板之製造方法,其包括:積層體準備步驟,其係準備將透明工件經由暫時固定材而暫時固定於支持體上的成之積層體,加工步驟,其係藉由包括200℃以上之加熱處理的圖案加工而於上述透明工件形成圖案而製作透明電路基板,及剝離步驟,其係將上述透明電路基板自上述暫時固定材剝離;且針對上述暫時固定材以升溫速度5℃/min升溫至400℃而進行示差熱-熱重量同步測定時,上述暫時固定材於200℃下之重量減少率未達1%。 The present invention relates to a method of manufacturing a transparent circuit substrate, comprising: a laminate preparation step of preparing a laminated body in which a transparent workpiece is temporarily fixed to a support via a temporary fixing member, and a processing step is included Forming a pattern of heat treatment at 200° C. or higher to form a transparent circuit substrate on the transparent workpiece, and a peeling step of peeling off the transparent circuit substrate from the temporary fixing material; and raising temperature of the temporary fixing member by 5 When the temperature was raised to 400 ° C and the differential thermal-thermal weight simultaneous measurement was carried out, the weight reduction rate of the temporary fixing material at 200 ° C was less than 1%.

於該製造方法中,因使用200℃以下之高溫下之重量減少率未達1%之高耐熱性的暫時固定材而固定透明工件,故即便進行包括200℃以上之加熱處理之圖案加工,亦可充分抑制來自暫時固定材之釋氣之產生,其結果,可於乾淨狀態下進行圖案加工,而可形成所需之圖案。再者,重量減少率之測定方法係依據實施例之記載。 In this manufacturing method, since a transparent workpiece is fixed by using a temporary fixing material having a high heat resistance of less than 1% at a high temperature of 200 ° C or lower, even if pattern processing including heat treatment at 200 ° C or higher is performed, The generation of outgas from the temporary fixing material can be sufficiently suppressed, and as a result, pattern processing can be performed in a clean state, and a desired pattern can be formed. Further, the method for measuring the weight reduction rate is based on the description of the examples.

於該製造方法中,上述暫時固定材較佳為具備:高黏著層,其對玻璃板具有0.05N/20mm以上且10N/20mm以下之黏著力,與低黏著層,其對玻璃板具有0N/20mm以上且未達0.05N/20mm之黏著力。藉由此種構成,可高效率地同時實現透明工件之加工時之保持性與加工後之剝離性。 In the manufacturing method, the temporary fixing member preferably includes a high-adhesion layer having an adhesion force of 0.05 N/20 mm or more and 10 N/20 mm or less to the glass plate, and a low adhesion layer having 0 N/for the glass plate. Adhesive force of 20mm or more and less than 0.05N/20mm. According to this configuration, the removability at the time of processing of the transparent workpiece and the peelability after the processing can be simultaneously achieved with high efficiency.

於上述圖案形成後之上述積層體之俯視中,上述透明工件上之圖案加工區域之外周較佳為位於較上述低黏著層之外周內側。藉此,即便於將透明電路基板之圖案加工區域之外周部切下之情形、或將透明電路基板逐個圖案加工區域單片化之情形時,亦可將低黏著層分配於切出之透明電路基板,而可容易地進行自支持體之剝離。再者,對應1塊低黏著層之圖案加工區域之數量可為1個,亦可為複數個。於將複數個圖案加工區域分配於1塊低黏著層之情形時,位於最外周之圖案加工區域之外周位於低黏著層之外周的內側即可。 In the plan view of the laminated body after the pattern formation, the outer periphery of the pattern processing region on the transparent workpiece is preferably located on the inner side of the outer periphery of the lower adhesive layer. Thereby, even when the peripheral portion of the transparent circuit substrate is cut out, or when the transparent circuit substrate is singulated one by one, the low-adhesive layer can be distributed to the cut-out transparent circuit. The substrate can be easily peeled off from the support. Furthermore, the number of pattern processing regions corresponding to one low adhesion layer may be one or plural. When a plurality of pattern processing regions are allocated to one low-adhesion layer, the outer periphery of the pattern processing region at the outermost periphery may be located inside the outer periphery of the low-adhesion layer.

於上述積層體中,上述低黏著層較佳為配置於上述透明工件與上述支持體之間,上述高黏著層較佳為以將上述透明電路基板之外周側面與上述支持體之外周側面連結之方式配置。藉此,高黏著層未附著於透明工件之加工區域,因此可將透明工件於乾淨狀態下進行加工。又,於透明工件自支持體剝離時,因僅將位於外周之高黏著層之部分剝離或切下即可,故可謀求生產效率之提高。 In the above laminated body, the low-adhesion layer is preferably disposed between the transparent workpiece and the support, and the high-adhesion layer is preferably connected to the outer peripheral side surface of the transparent circuit substrate and the outer peripheral side surface of the support. Mode configuration. Thereby, the high adhesive layer is not attached to the processing region of the transparent workpiece, so that the transparent workpiece can be processed in a clean state. Further, when the transparent workpiece is peeled off from the support, only a portion of the high-adhesion layer located on the outer periphery can be peeled off or cut off, so that the production efficiency can be improved.

於將高黏著層配置於積層體之外周側面之情形時,上述積層體之側視中,上述高黏著層之高度較佳為上述積層體之高度之50%以上且未達100%。藉此,可使透明工件牢牢地固定於支持體,並且防止高黏著層向透明工件之加工面折入,而可乾淨地加工透明工件。 In the case where the high-adhesion layer is disposed on the outer peripheral side of the laminated body, the height of the high-adhesion layer is preferably 50% or more and less than 100% of the height of the laminated body in the side view of the laminated body. Thereby, the transparent workpiece can be firmly fixed to the support, and the high adhesive layer can be prevented from being folded into the processing surface of the transparent workpiece, and the transparent workpiece can be cleanly processed.

10、40‧‧‧積層體 10, 40‧‧‧ layered body

11、21、31、41‧‧‧暫時固定材 11, 21, 31, 41‧‧‧ temporary fixtures

11a、21a、31a、41a‧‧‧高黏著層 11a, 21a, 31a, 41a‧‧‧ high adhesion layer

11b、21b、31b、41b‧‧‧低黏著層 11b, 21b, 31b, 41b‧‧‧ low adhesion layer

11C、21C‧‧‧暫時固定材之中央部 11C, 21C‧‧‧ the central part of temporary fixtures

11P、21P‧‧‧暫時固定材之周緣部 11P, 21P‧‧‧ Peripheral parts of temporary fixtures

12、42‧‧‧支持體 12. 42‧‧‧ Support

13、43‧‧‧透明工件 13, 43‧‧‧ transparent workpiece

14、44‧‧‧圖案 14, 44‧‧‧ patterns

15、45‧‧‧透明電路基板 15, 45‧‧‧ Transparent circuit substrate

h‧‧‧高黏著層之高度 H‧‧‧ Height of high adhesion layer

H‧‧‧積層體之高度 H‧‧‧ height of laminated body

圖1A係本發明之一實施形態之暫時固定材之局部透視俯視圖。 Fig. 1A is a partial perspective plan view of a temporary fixing member according to an embodiment of the present invention.

圖1B係圖1之X-X線剖面圖。 Fig. 1B is a cross-sectional view taken along line X-X of Fig. 1.

圖2A係用以說明本發明之一實施形態之透明電路基板之製造方法的剖面模式圖。 Fig. 2A is a schematic cross-sectional view showing a method of manufacturing a transparent circuit board according to an embodiment of the present invention.

圖2B係用以說明本發明之一實施形態之透明電路基板之製造方法的剖面模式圖。 Fig. 2B is a schematic cross-sectional view showing a method of manufacturing a transparent circuit board according to an embodiment of the present invention.

圖2C係用以說明本發明之一實施形態之透明電路基板之製造方 法的剖面模式圖。 2C is a view for explaining the manufacture of a transparent circuit substrate according to an embodiment of the present invention; Sectional pattern diagram of the law.

圖2D係用以說明本發明之一實施形態之透明電路基板之製造方法的剖面模式圖。 2D is a schematic cross-sectional view for explaining a method of manufacturing a transparent circuit substrate according to an embodiment of the present invention.

圖3係表示本發明之另一實施形態之暫時固定材的剖面模式圖。 Fig. 3 is a cross-sectional schematic view showing a temporary fixing member according to another embodiment of the present invention.

圖4係表示本發明之進而另一實施形態之暫時固定材的剖面模式圖。 Fig. 4 is a cross-sectional schematic view showing a temporary fixing member according to still another embodiment of the present invention.

圖5係表示本發明之又一實施形態之暫時固定材的剖面模式圖。 Fig. 5 is a cross-sectional schematic view showing a temporary fixing member according to still another embodiment of the present invention.

本發明之透明電路基板之製造方法包括:積層體準備步驟,其係準備將透明工件經由暫時固定材而暫時固定於支持體上而成的積層體;加工步驟,其係藉由包括200℃以上之加熱處理的圖案加工而於上述透明工件形成圖案而製作透明電路基板;及剝離步驟,其係將上述透明電路基板自上述暫時固定材剝離,且針對上述暫時固定材以升溫速度5℃/min升溫至400℃而進行示差熱-熱重量同步測定時,上述暫時固定材於200℃下之重量減少率未達1%。 A method for producing a transparent circuit board according to the present invention includes a laminate preparation step of preparing a laminate in which a transparent workpiece is temporarily fixed to a support via a temporary fixing member, and a processing step of including a temperature of 200 ° C or higher Forming a pattern of the heat treatment to form a transparent circuit substrate on the transparent workpiece; and a peeling step of peeling the transparent circuit substrate from the temporary fixing material, and heating the substrate at a temperature increase rate of 5 ° C/min When the temperature was raised to 400 ° C and the differential thermal-thermal weight synchronization measurement was performed, the weight reduction rate of the temporary fixing material at 200 ° C was less than 1%.

首先,對於本發明之一實施形態之透明電路基板之製造方法,以下一面參照圖式一面進行說明。再者,圖中省略無需說明之部分,又有為了便於說明而進行擴大或縮小等而進行圖示之部分。又,本說明書中所使用之「上表面」、「下表面」等表示上下等位置關係之用語只是為了便於說明而用以表示圖中之各構成構件之位置關係,並非限定暫時固定材或半導體裝置之實際狀態或位置關係。 First, a method of manufacturing a transparent circuit substrate according to an embodiment of the present invention will be described below with reference to the drawings. In addition, in the drawings, portions that are not described are omitted, and portions that are enlarged or reduced for convenience of explanation are shown. In addition, the terms "upper surface" and "lower surface" used in the present specification are used to indicate the positional relationship of each constituent member in the drawing for convenience of explanation, and are not limited to temporary fixing materials or semiconductors. The actual state or positional relationship of the device.

<第1實施形態> <First embodiment>

[積層體準備步驟] [Layer preparation step]

積層體準備步驟中,準備將透明工件經由暫時固定材而暫時固 定於支持體上而成之積層體。以下,對各構件進行說明後,對積層體之形成進行說明。 In the laminate preparation step, the transparent workpiece is temporarily fixed by the temporary fixing material. A layered body that is set on the support. Hereinafter, each member will be described, and the formation of the laminated body will be described.

(暫時固定材) (temporary fixing material)

圖1A係本發明之一實施形態之暫時固定材的局部透視俯視圖,圖1B係其X-X線剖面圖。如圖1B所示,暫時固定材11中,周緣部11P由高黏著層11a形成,並且較周緣部11P內側之中央部11C係由高黏著層11a與黏著力低於該高黏著層11a之低黏著層11b積層而形成。即,暫時固定材11具有低黏著層11b、與於低黏著層11b上以覆蓋低黏著層11b之上表面及側面之態樣積層之高黏著層11a。低黏著層11b之黏著力低於高黏著層11a之黏著力。再者,於將暫時固定材11貼合於支持體時,暫時固定材11係以低黏著層11b露出側之面作為貼合面而貼合於支持體(參照圖2A)。 Fig. 1A is a partial perspective plan view of a temporary fixing member according to an embodiment of the present invention, and Fig. 1B is a cross-sectional view taken along line X-X. As shown in Fig. 1B, in the temporary fixing member 11, the peripheral portion 11P is formed of the high-adhesion layer 11a, and the central portion 11C on the inner side of the peripheral portion 11P is made of the high-adhesion layer 11a and the adhesive force is lower than that of the high-adhesion layer 11a. The adhesive layer 11b is formed by lamination. That is, the temporary fixing member 11 has a low-adhesion layer 11b and a high-adhesion layer 11a which is laminated on the low-adhesion layer 11b so as to cover the upper surface and the side surface of the low-adhesion layer 11b. The adhesion of the low adhesion layer 11b is lower than the adhesion of the high adhesion layer 11a. When the temporary fixing material 11 is bonded to the support, the temporary fixing material 11 is bonded to the support by the surface on the exposed side of the low-adhesion layer 11b as a bonding surface (see FIG. 2A).

暫時固定材11中,黏著力高於低黏著層11b之高黏著層11a存在於周緣部,因此該部分可牢牢地貼合於支持體。又,並非僅具有高黏著層11a,亦具有黏著力低於高黏著層11a之低黏著層11b,因此於下述之剝離步驟中,可藉由外力而容易地將支持體與透明電路基板上下分離。 In the temporary fixing member 11, the high adhesive layer 11a having an adhesive force higher than that of the low-adhesion layer 11b exists in the peripheral portion, so that the portion can be firmly adhered to the support. Further, it is not only the high-adhesion layer 11a but also the low-adhesion layer 11b having a lower adhesive force than the high-adhesion layer 11a. Therefore, in the peeling step described below, the support and the transparent circuit substrate can be easily moved up and down by an external force. Separation.

又,於暫時固定材11,於僅高黏著層11a露出之面可更牢固地固定暫時固定材11上所配置之透明工件。又,中央部11C係由高黏著層11a與低黏著層11b積層而形成。因此,由高黏著層11a與低黏著層11b積層而形成之中央部11C與僅由高黏著層11a形成之周緣部11P相比,黏著力相對較低。藉此,可藉由施加外力而容易地將支持體與透明電路基板上下分離。又,低黏著層11b亦與支持體連接,因此於剝離步驟後,容易將該暫時固定材11自支持體剝離。因此,容易再利用支持體。又,高黏著層11a形成於暫時固定材11之周緣部11P,故於下述之剝離步驟中,利用溶劑使高黏著層11a溶解,或利用切割器或雷射等 而物理性地切出切口,藉此可阻斷周緣部11P對中央部11C之黏著力,而可更容易地將暫時固定材11自支持體12剝離。 Further, in the temporary fixing member 11, the transparent workpiece placed on the temporary fixing member 11 can be more firmly fixed to the surface on which only the high-adhesion layer 11a is exposed. Further, the central portion 11C is formed by laminating a high adhesion layer 11a and a low adhesion layer 11b. Therefore, the central portion 11C formed by laminating the high-adhesion layer 11a and the low-adhesion layer 11b has a relatively low adhesive force as compared with the peripheral portion 11P formed only of the high-adhesion layer 11a. Thereby, the support can be easily separated from the transparent circuit substrate by applying an external force. Further, since the low-adhesion layer 11b is also connected to the support, the temporary fixing member 11 is easily peeled off from the support after the peeling step. Therefore, it is easy to reuse the support. Further, since the high-adhesion layer 11a is formed on the peripheral edge portion 11P of the temporary fixing member 11, the high-adhesion layer 11a is dissolved by a solvent in the peeling step described below, or a cutter or a laser is used. Further, the slit is physically cut, whereby the adhesion of the peripheral portion 11P to the central portion 11C can be blocked, and the temporary fixing member 11 can be more easily peeled off from the support 12.

對於暫時固定材11,以升溫速度5℃/min升溫至400℃而進行示差熱-熱重量同步測定,此時暫時固定材11於200℃下之重量減少率較佳為未達1%,更佳為0.8%以下,進而較佳為0.6%以下。上述重量減少率之下限越低越佳,較佳為0%以上,但亦可為0.01%以上。藉由上述重量減少率處於上述範圍內,而可充分抑制來自暫時固定材之釋氣之產生,可於乾淨狀態下進行圖案加工而可形成所需之圖案。 The temporary fixing material 11 is subjected to differential thermal-thermal weight synchronous measurement at a temperature increase rate of 5 ° C/min to 400 ° C. At this time, the weight reduction rate of the temporary fixing material 11 at 200 ° C is preferably less than 1%. Preferably, it is 0.8% or less, and further preferably 0.6% or less. The lower limit of the weight reduction rate is preferably as low as possible, and is preferably 0% or more, but may be 0.01% or more. When the weight reduction rate is within the above range, the generation of outgas from the temporary fixing material can be sufficiently suppressed, and the pattern can be processed in a clean state to form a desired pattern.

暫時固定材11之厚度並無特別限定,其下限例如為5μm以上,較佳為10μm以上。若為5μm以上,則可追隨支持體表面或透明工件表面之凹凸,而可藉由暫時固定材無間隙地對支持體與透明工件之間進行填充。又,暫時固定材11之厚度之上限例如為500μm以下,較佳為200μm以下。若為500μm以下,則可抑制厚度不均或加熱時之收縮、膨脹。 The thickness of the temporary fixing member 11 is not particularly limited, and the lower limit thereof is, for example, 5 μm or more, and preferably 10 μm or more. When the thickness is 5 μm or more, the surface of the support or the surface of the transparent workpiece can follow the irregularities, and the support and the transparent workpiece can be filled with the temporary fixing material without a gap. Further, the upper limit of the thickness of the temporary fixing member 11 is, for example, 500 μm or less, preferably 200 μm or less. When it is 500 μm or less, thickness unevenness or shrinkage and expansion at the time of heating can be suppressed.

中央部11C中之高黏著層11a之厚度可適當設定,其下限較佳為0.1μm以上,更佳為0.5μm以上,進而較佳為1μm以上。又,該厚度之上限較佳為300μm以下,更佳為200μm以下。又,中央部11C中之低黏著層11b之厚度可以與高黏著層11a相同之厚度適當設定。 The thickness of the high-adhesion layer 11a in the central portion 11C can be appropriately set, and the lower limit thereof is preferably 0.1 μm or more, more preferably 0.5 μm or more, and still more preferably 1 μm or more. Further, the upper limit of the thickness is preferably 300 μm or less, more preferably 200 μm or less. Further, the thickness of the low-adhesion layer 11b in the central portion 11C can be appropriately set to the same thickness as that of the high-adhesion layer 11a.

如圖1A所示,暫時固定材11於俯視時之形狀為矩形。暫時固定材11之俯視尺寸並無特別限定,根據加工之透明工件之尺寸適當設定即可。例如,暫時固定材11之一邊之長度較佳為相對於支持體中所對應之邊之長度+1.0~-1.0mm。 As shown in FIG. 1A, the temporary fixing member 11 has a rectangular shape in plan view. The plan view size of the temporary fixing member 11 is not particularly limited, and may be appropriately set depending on the size of the processed transparent workpiece. For example, the length of one side of the temporary fixing member 11 is preferably +1.0 to -1.0 mm with respect to the length of the corresponding side in the support.

又,於俯視暫時固定材11時,低黏著層11b之形狀為矩形。俯視暫時固定材11時之低黏著層11b之面積相對於俯視暫時固定材11時之暫時固定材11之面積,較佳為10%以上,更佳為20%以上,進而較佳為50%以上。若為10%以上,則容易將透明電路基板與支持體分離。 又,低黏著層11b之面積較佳為99.95%以下,更佳為99.9%以下。若為99.95%以下,則可將透明工件牢牢地固定於支持體。 Further, when the temporary fixing member 11 is viewed in plan, the shape of the low-adhesion layer 11b is rectangular. The area of the low-adhesion layer 11b when the temporary fixing member 11 is viewed from above is preferably 10% or more, more preferably 20% or more, and still more preferably 50% or more with respect to the area of the temporary fixing member 11 when the temporary fixing member 11 is viewed from above. . When it is 10% or more, it is easy to separate a transparent circuit board and a support. Further, the area of the low-adhesion layer 11b is preferably 99.95% or less, more preferably 99.9% or less. If it is 99.95% or less, the transparent workpiece can be firmly fixed to the support.

(高黏著層) (high adhesion layer)

關於高黏著層11a之黏著力,例如於溫度23±2℃、剝離速度300mm/min之條件下對玻璃板之90°剝離力較佳為0.05N/20mm以上,更佳為0.10N/20mm以上。若為0.05N/20mm以上,則可將支持體與暫時固定材11更牢固地固定。又,該90°剝離力之上限並無特別限定,越大越佳,但例如為10N/20mm以下,較佳為5N/20mm以下。 Regarding the adhesion of the high-adhesion layer 11a, for example, at a temperature of 23±2° C. and a peeling speed of 300 mm/min, the 90° peeling force to the glass plate is preferably 0.05 N/20 mm or more, and more preferably 0.10 N/20 mm or more. . When it is 0.05 N/20 mm or more, the support and the temporary fixing material 11 can be fixed more firmly. Further, the upper limit of the 90° peeling force is not particularly limited, and is preferably as large as possible, but is, for example, 10 N/20 mm or less, preferably 5 N/20 mm or less.

作為構成高黏著層11a之接著劑組合物,並無特別限定,可較佳地使用具有醯亞胺基且至少一部分具有來自具有烷基醚結構之二胺之結構單元或來自直鏈伸烷基二胺之結構單元的聚醯亞胺樹脂或聚醯胺醯亞胺樹脂。又,亦可較佳地使用聚矽氧樹脂。其中,就耐熱性、耐化學品性、糊劑殘留性方面而言,較佳為上述聚醯亞胺樹脂。 The adhesive composition constituting the high-adhesion layer 11a is not particularly limited, and a structural unit having a fluorenylene group and at least a part having a diamine derived from an alkyl ether structure or a linear alkyl group can be preferably used. A polyimine resin or a polyamidoximine resin of a structural unit of a diamine. Further, a polyoxynoxy resin can also be preferably used. Among them, the above polyimine resin is preferred in terms of heat resistance, chemical resistance, and paste residue.

上述聚醯亞胺樹脂通常可藉由使作為其前驅物之聚醯胺酸醯亞胺化(脫水縮合)而獲得。作為使聚醯胺酸醯亞胺化之方法,例如可採用先前公知之加熱醯亞胺化法、共沸脫水法、化學醯亞胺化法等。其中,較佳為加熱醯亞胺化法。於採用加熱醯亞胺化法之情形時,為了防止聚醯亞胺樹脂因氧化而劣化,較佳為於氮氣環境下或真空中等惰性氣體環境下進行加熱處理。 The above polyimine resin can be usually obtained by imidization (dehydration condensation) of polyphosphonium amide as its precursor. As a method of imidizing polyphosphonium amide, for example, a conventionally known heating hydrazine imidation method, azeotropic dehydration method, chemical hydrazine imidation method, or the like can be employed. Among them, a heated hydrazine imidation method is preferred. In the case of using the heated hydrazine imidation method, in order to prevent deterioration of the polyimide resin by oxidation, it is preferred to carry out heat treatment in an inert gas atmosphere under a nitrogen atmosphere or a vacuum.

上述聚醯胺酸係可於適當選擇之溶劑中,將酸酐與二胺(包含具有烷基醚結構之二胺及直鏈伸烷基二胺(亦將兩者合稱為「特定二胺」)、以及該等以外之二胺(以下亦稱為「其他二胺」)中之任一者)以實質上成為等莫耳比之方式進行添加,並使該等反應而獲得。 The above polylysine may be an acid anhydride and a diamine (including a diamine having an alkyl ether structure and a linear alkylenediamine) in a solvent selected as appropriate (also referred to as "specific diamine" And any one of these diamines (hereinafter also referred to as "other diamines") is added in such a manner as to be substantially equal to the molar ratio, and these reactions are obtained.

上述具有烷基醚結構之二胺只要為具有烷基醚結構、且具有至少2個具有胺結構之末端的化合物,則無特別限定。例如可列舉:具有亞甲基骨架及鍵結於其之醚基之二胺等。 The diamine having an alkyl ether structure is not particularly limited as long as it has a compound having an alkyl ether structure and having at least two terminals having an amine structure. For example, a diamine having a methylene skeleton and an ether group bonded thereto may be mentioned.

作為上述具有亞甲基骨架及鍵結於其之醚基的二胺,例如可列舉:具有聚丙二醇結構且於兩末端各具有1個胺基之二胺、具有聚乙二醇結構且於兩末端各具有1個胺基之二胺、具有聚丁二醇結構且於兩末端各具有1個胺基之二胺等具有伸烷基二醇之二胺。又,可列舉組合具有複數個該等亞甲基骨架及鍵結於其之醚基、且於兩末端各具有1個胺基的二胺。 The diamine having a methylene skeleton and an ether group bonded thereto may, for example, be a diamine having a polypropylene glycol structure and having one amine group at both ends, and having a polyethylene glycol structure and A diamine having an amine group and a diamine having a polybutylene glycol structure and having one amine group at both ends. Further, a diamine having a plurality of such methylene skeletons and an ether group bonded thereto and having one amine group at both ends may be mentioned.

上述具有醚結構之二胺之分子量較佳為100~5000之範圍內,更佳為150~4800。若上述具有醚結構之二胺之分子量為100~5000之範圍內,則容易獲得取得高黏著力且輕剝離性之高黏著層11a。 The molecular weight of the above diamine having an ether structure is preferably in the range of from 100 to 5,000, more preferably from 150 to 4,800. When the molecular weight of the diamine having an ether structure is in the range of 100 to 5,000, it is easy to obtain a high-adhesion layer 11a having high adhesion and light peeling property.

關於上述直鏈伸烷基二胺,可列舉具有直鏈伸烷基結構、且兩末端各具有1個胺基的二胺。作為上述直鏈伸烷基二胺,例如可列舉:乙二胺、己二胺、1,8-辛二胺、1,10-癸二胺、1,12-十二烷二胺、1,14-十四烷二胺、1,16-十六烷二胺、1,20-二十烷二胺等。上述直鏈伸烷基二胺之分子量通常為50~1,000,000,較佳為100~30,000。 The linear alkylenediamine may be a diamine having a linear alkylene group structure and having one amine group at each terminal. Examples of the linear alkylene diamine include ethylenediamine, hexamethylenediamine, 1,8-octanediamine, 1,10-decanediamine, 1,12-dodecanediamine, and 1, 14-tetradecanediamine, 1,16-hexadecyldiamine, 1,20-eicosanediamine, and the like. The linear alkylene diamine has a molecular weight of usually from 50 to 1,000,000, preferably from 100 to 30,000.

於上述聚醯亞胺樹脂之形成中,亦可併用特定二胺以外之其他二胺。作為其他二胺,可列舉芳香族二胺。藉由併用其他二胺,可控制與被黏著體之密接力。 In the formation of the above polyimine resin, a diamine other than a specific diamine may be used in combination. As another diamine, an aromatic diamine is mentioned. By using other diamines in combination, the adhesion to the adherend can be controlled.

作為芳香族二胺,例如可列舉:4,4'-二胺基二苯醚、3,4'-二胺基二苯醚、3,3'-二胺基二苯醚、間苯二胺、對苯二胺、4,4'-二胺基二苯基丙烷、3,3'-二胺基二苯基甲烷、4,4'-二胺基二苯硫醚、3,3'-二胺基二苯硫醚、4,4'-二胺基二苯基碸、3,3'-二胺基二苯基碸、1,4-雙(4-胺基苯氧基)苯、1,3-雙(4-胺基苯氧基)苯、1,3-雙(3-胺基苯氧基)苯、1,3-雙(4-胺基苯氧基)-2,2-二甲基丙烷、4,4'-二胺基二苯甲酮等。上述芳香族二胺之分子量通常為50~1000,較佳為100~500。於本說明書中,二胺之分子量係指藉由GPC(凝膠滲透層析法)進行測定並由聚苯乙烯換算而算出之值(重量平均分子量)。 Examples of the aromatic diamine include 4,4'-diaminodiphenyl ether, 3,4'-diaminodiphenyl ether, 3,3'-diaminodiphenyl ether, and m-phenylenediamine. , p-phenylenediamine, 4,4'-diaminodiphenylpropane, 3,3'-diaminodiphenylmethane, 4,4'-diaminodiphenyl sulfide, 3,3'- Diaminodiphenyl sulfide, 4,4'-diaminodiphenylanthracene, 3,3'-diaminodiphenylanthracene, 1,4-bis(4-aminophenoxy)benzene, 1,3-bis(4-aminophenoxy)benzene, 1,3-bis(3-aminophenoxy)benzene, 1,3-bis(4-aminophenoxy)-2,2 - dimethylpropane, 4,4'-diaminobenzophenone, and the like. The molecular weight of the above aromatic diamine is usually from 50 to 1,000, preferably from 100 to 500. In the present specification, the molecular weight of the diamine means a value (weight average molecular weight) measured by GPC (gel permeation chromatography) and calculated from polystyrene.

於併用具有烷基醚結構之二胺與其他二胺之情形時,兩者之調配比例以莫耳比計較佳為處於50:50~20:80之範圍內,更佳為20:80~50:50,進而較佳為25:75~45:55。若特定二胺與其他二胺之調配比例處於上述範圍內,則耐熱性與剝離性均更為優異。 When a diamine having an alkyl ether structure and other diamines are used in combination, the blending ratio of the two is preferably in the range of 50:50 to 20:80, more preferably 20:80 to 50 in terms of molar ratio. : 50, further preferably 25:75 to 45:55. When the ratio of the specific diamine to the other diamine is in the above range, both heat resistance and peelability are more excellent.

又,於併用直鏈伸烷基二胺與其他二胺之情形時,兩者之調配比例以莫耳比計較佳為處於100:0~20:80之範圍內,更佳為95:5~40:60,進而較佳為90:10~50:50。若特定二胺與其他二胺之調配比例處於上述範圍內,則耐熱性與剝離性均更為優異。 Further, when a linear alkyl diamine and other diamines are used in combination, the ratio of the two is preferably in the range of 100:0 to 20:80, more preferably 95:5. 40:60, and further preferably 90:10 to 50:50. When the ratio of the specific diamine to the other diamine is in the above range, both heat resistance and peelability are more excellent.

作為上述酸酐,例如可列舉:3,3',4,4'-聯苯四羧酸二酐、2,2',3,3'-聯苯四羧酸二酐、3,3',4,4'-二苯甲酮四羧酸二酐、2,2',3,3'-二苯甲酮四羧酸二酐、4,4'-氧二鄰苯二甲酸二酐、2,2-雙(2,3-二羧基苯基)六氟丙烷二酐、2,2-雙(3,4-二羧基苯基)六氟丙烷二酐(6FDA)、雙(2,3-二羧基苯基)甲烷二酐、雙(3,4-二羧基苯基)甲烷二酐、雙(2,3-二羧基苯基)碸二酐、雙(3,4-二羧基苯基)碸二酐、均苯四甲酸二酐、乙二醇雙偏苯三甲酸二酐等。該等可單獨使用,亦可併用2種以上。 Examples of the acid anhydride include 3,3',4,4'-biphenyltetracarboxylic dianhydride, 2,2',3,3'-biphenyltetracarboxylic dianhydride, and 3,3',4. , 4'-benzophenone tetracarboxylic dianhydride, 2,2',3,3'-benzophenonetetracarboxylic dianhydride, 4,4'-oxydiphthalic dianhydride, 2, 2-bis(2,3-dicarboxyphenyl)hexafluoropropane dianhydride, 2,2-bis(3,4-dicarboxyphenyl)hexafluoropropane dianhydride (6FDA), double (2,3-di) Carboxyphenyl)methane dianhydride, bis(3,4-dicarboxyphenyl)methane dianhydride, bis(2,3-dicarboxyphenyl)ruthenic anhydride, bis(3,4-dicarboxyphenyl)anthracene Di-anhydride, pyromellitic dianhydride, ethylene glycol trimellitic acid dianhydride, and the like. These may be used alone or in combination of two or more.

作為使上述酸酐與上述二胺反應時之溶劑,可列舉:N,N-二甲基乙醯胺、N-甲基-2-吡咯啶酮、N,N-二甲基甲醯胺、環戊酮等。該等可單獨使用,亦可混合複數種使用。又,為了調整原材料或樹脂之溶解性,亦可適當混合甲苯或二甲苯等非極性溶劑而使用。 Examples of the solvent for reacting the above acid anhydride with the above diamine include N,N-dimethylacetamide, N-methyl-2-pyrrolidone, N,N-dimethylformamide, and a ring. Pentanone and the like. These may be used singly or in combination of plural kinds. Further, in order to adjust the solubility of the raw material or the resin, a nonpolar solvent such as toluene or xylene may be appropriately mixed and used.

作為上述聚矽氧樹脂,例如可列舉:過氧化物交聯型聚矽氧系黏著劑、加成反應型聚矽氧系黏著劑、脫氫反應型聚矽氧系黏著劑、濕氣硬化型聚矽氧系黏著劑等。上述聚矽氧樹脂可單獨使用1種,亦可併用2種以上。若使用上述聚矽氧樹脂,則耐熱性變高,而高溫下之儲存模數或黏著力可成為適當值。上述聚矽氧樹脂中,就雜質較少方面而言,較佳為加成反應型聚矽氧系黏著劑。 Examples of the polyoxyxylene resin include a peroxide cross-linking type polyoxynoxy adhesive, an addition reaction type polyoxynoxy adhesive, a dehydrogenation type polyoxynoxy adhesive, and a moisture curing type. Polyoxygenated adhesives, etc. The above polysiloxane resin may be used singly or in combination of two or more. When the above polyoxyxylene resin is used, the heat resistance becomes high, and the storage modulus or adhesion at a high temperature can be an appropriate value. Among the above polyoxyxylene resins, an addition reaction type polyoxo-based adhesive is preferred in terms of less impurities.

構成高黏著層11a之接著劑組合物亦可含有其他添加劑。作為此 種其他添加劑,例如可列舉:阻燃劑、矽烷偶合劑、離子捕捉劑等。作為阻燃劑,例如可列舉:三氧化二銻、五氧化二銻、溴化環氧樹脂等。作為矽烷偶合劑,例如可列舉:β-(3,4-環氧環己基)乙基三甲氧基矽烷、γ-縮水甘油氧基丙基三甲氧基矽烷、γ-縮水甘油氧基丙基甲基二乙氧基矽烷等。作為離子捕捉劑,例如可列舉:水滑石類、氫氧化鉍等。上述其他添加劑可僅1種,亦可為2種以上。 The adhesive composition constituting the high-adhesion layer 11a may also contain other additives. As this Examples of other additives include a flame retardant, a decane coupling agent, and an ion scavenger. Examples of the flame retardant include antimony trioxide, antimony pentoxide, and brominated epoxy resin. Examples of the decane coupling agent include β-(3,4-epoxycyclohexyl)ethyltrimethoxydecane, γ-glycidoxypropyltrimethoxydecane, and γ-glycidoxypropyl group. Diethoxy decane and the like. Examples of the ion scavenger include hydrotalcites and barium hydroxide. The other additives may be used alone or in combination of two or more.

(低黏著層) (low adhesion layer)

作為構成低黏著層11b之接著劑組合物,並無特別限定,可較佳地使用具有醯亞胺基、且至少一部分具有來自上述其他二胺之結構單元的聚醯亞胺樹脂。藉由不使用上述特定二胺而僅使用上述其他二胺,而可使黏著力適當地降低。關於低黏著層11b之組成或形成方法,除不使用上述高黏著層項中之上述特定二胺而僅使用其他二胺作為二胺方面外,可採用與高黏著層相同之組成及形成方法。 The adhesive composition constituting the low-adhesion layer 11b is not particularly limited, and a polyimide having a quinone imine group and having at least a part of a structural unit derived from the other diamine described above can be preferably used. By using only the above-mentioned other diamine without using the above specific diamine, the adhesion can be appropriately lowered. Regarding the composition or formation method of the low-adhesion layer 11b, the same composition and formation method as the high-adhesion layer can be employed except that the above-mentioned specific diamine in the above-mentioned high-adhesion layer is not used and only the other diamine is used as the diamine.

又,作為上述其他二胺,亦可較佳地使用2,2'-雙(三氟甲基)聯苯胺、1,1'-雙(三氟甲基)聯苯胺等含氟芳香族二胺。 Further, as the other diamine, a fluorine-containing aromatic diamine such as 2,2'-bis(trifluoromethyl)benzidine or 1,1'-bis(trifluoromethyl)benzidine can be preferably used. .

作為低黏著層11b,除使用如上述之樹脂而形成之層以外,只要為具有較高黏著層11a之黏著力低之黏著力、且具有耐熱性之層,則可無特別限定而使用。作為此種層,例如可列舉:鋁等金屬、或陶瓷等無機材料之薄膜、其他聚醯亞胺或聚醚醚酮等其他耐熱性有機材料之薄膜等。作為無機材料之薄膜之形成法,可列舉:蒸鍍法、濺鍍法、化學氣相沈積法、溶膠-凝膠法等。 The low-adhesive layer 11b is not particularly limited as long as it is a layer having a high adhesive force of the adhesive layer 11a and a heat-resistant layer, in addition to the layer formed of the above-mentioned resin. Examples of such a layer include a metal such as aluminum, a film of an inorganic material such as ceramics, and a film of another heat-resistant organic material such as polyimide or polyetheretherketone. Examples of the method for forming the film of the inorganic material include a vapor deposition method, a sputtering method, a chemical vapor deposition method, and a sol-gel method.

低黏著層11b之黏著力低於高黏著層11a之黏著力。關於低黏著層11b之黏著力,例如於溫度23±2℃、剝離速度300mm/min之條件下對玻璃板之90°剝離力較佳為未達0.05N/20mm,更佳為0.01N/20mm以下。若未達0.05N/20mm,則可容易地剝離低黏著層11b。該90°剝離力之下限越低越佳,較佳為0N/20mm以上,更佳為0.001N/20mm以 上,進而較佳為0.0015N/20mm以上。 The adhesion of the low adhesion layer 11b is lower than the adhesion of the high adhesion layer 11a. Regarding the adhesion of the low-adhesion layer 11b, for example, at a temperature of 23±2° C. and a peeling speed of 300 mm/min, the 90° peeling force to the glass plate is preferably less than 0.05 N/20 mm, more preferably 0.01 N/20 mm. the following. If it is less than 0.05 N/20 mm, the low-adhesion layer 11b can be easily peeled off. The lower limit of the 90° peeling force is preferably as low as possible, preferably 0 N/20 mm or more, more preferably 0.001 N/20 mm. Further, it is preferably 0.0015 N/20 mm or more.

(暫時固定材之其他特性) (Other characteristics of temporary fixing materials)

上述暫時固定材於3%之氫氧化四甲基銨(TMAH)水溶液中於室溫下浸漬5分鐘後的重量減少率較佳為未達1重量%,更佳為未達0.9重量%,進而較佳為未達0.8重量%。又,上述重量減少率越小越佳。因此,上述重量減少率之下限較佳為0重量%以上,但亦可為0.001重量%以上。若浸漬於TMAH水溶液後重量減少率為上述範圍,則可提高耐溶劑性(尤其是對TMAH水溶液之耐溶劑性)。暫時固定材之上述重量減少率例如可利用所使用之二胺之組成(二胺對TMAH水溶液之溶解性)進行控制。上述重量減少率之測定方法係依據實施例之記載。 The weight reduction rate of the temporary fixing material after immersion in a 3% aqueous solution of tetramethylammonium hydroxide (TMAH) at room temperature for 5 minutes is preferably less than 1% by weight, more preferably less than 0.9% by weight, and further It is preferably less than 0.8% by weight. Further, the weight reduction rate is preferably as small as possible. Therefore, the lower limit of the weight reduction rate is preferably 0% by weight or more, but may be 0.001% by weight or more. When the weight reduction rate after immersion in the TMAH aqueous solution is in the above range, the solvent resistance (especially the solvent resistance to the TMAH aqueous solution) can be improved. The above weight reduction rate of the temporary fixing material can be controlled, for example, by the composition of the diamine used (the solubility of the diamine in the TMAH aqueous solution). The method for measuring the weight reduction rate described above is based on the description of the examples.

上述暫時固定材於10%之硫酸水溶液中於室溫下浸漬5分鐘後的重量減少率較佳為未達1重量%,更佳為未達0.9重量%,進而較佳為未達0.8重量%。又,上述重量減少率越小越佳。因此,上述重量減少率之下限較佳為0重量%以上,但亦可為0.001重量%以上。若浸漬於硫酸水溶液後之重量減少率為上述範圍,則可提高耐酸性(尤其是對硫酸水溶液之耐酸性)。暫時固定材之上述重量減少率例如可利用所使用之二胺之組成(二胺對硫酸水溶液之溶解性)進行控制。上述重量減少率之測定方法係依據實施例之記載。 The weight reduction rate of the temporary fixing material after immersion in a 10% sulfuric acid aqueous solution at room temperature for 5 minutes is preferably less than 1% by weight, more preferably less than 0.9% by weight, and even more preferably less than 0.8% by weight. . Further, the weight reduction rate is preferably as small as possible. Therefore, the lower limit of the weight reduction rate is preferably 0% by weight or more, but may be 0.001% by weight or more. When the weight reduction rate after immersing in the aqueous sulfuric acid solution is in the above range, the acid resistance (especially the acid resistance to the sulfuric acid aqueous solution) can be improved. The above weight reduction rate of the temporary fixing material can be controlled, for example, by using the composition of the diamine used (the solubility of the diamine in the aqueous sulfuric acid solution). The method for measuring the weight reduction rate described above is based on the description of the examples.

上述暫時固定材於10%之氫氧化鈉水溶液中於室溫下浸漬5分鐘後的重量減少率較佳為未達1重量%,更佳為未達0.9重量%,進而較佳為未達0.8重量%。又,上述重量減少率越小越佳。因此,上述重量減少率之下限較佳為0重量%以上,但亦可為0.001重量%以上。若浸漬於氫氧化鈉水溶液後之重量減少率為上述範圍,則可提高耐鹼性(尤其是對氫氧化鈉水溶液之耐鹼性)。暫時固定材之上述重量減少率例如可利用所使用之二胺之組成(二胺對氫氧化鈉水溶液之溶解性)進行控制。上述重量減少率之測定方法係依據實施例之記載。 The weight reduction rate of the temporary fixing material after immersion in a 10% sodium hydroxide aqueous solution at room temperature for 5 minutes is preferably less than 1% by weight, more preferably less than 0.9% by weight, and even more preferably less than 0.8%. weight%. Further, the weight reduction rate is preferably as small as possible. Therefore, the lower limit of the weight reduction rate is preferably 0% by weight or more, but may be 0.001% by weight or more. When the weight reduction rate after immersing in the aqueous sodium hydroxide solution is in the above range, alkali resistance (especially alkali resistance to an aqueous sodium hydroxide solution) can be improved. The above weight reduction rate of the temporary fixing material can be controlled, for example, by the composition of the diamine used (the solubility of the diamine in the aqueous sodium hydroxide solution). The method for measuring the weight reduction rate described above is based on the description of the examples.

上述暫時固定材於100mL之N-甲基吡咯啶酮(NMP)中於室溫下浸漬5分鐘後的重量減少率較佳為未達1重量%,更佳為未達0.9重量%,進而較佳為未達0.8重量%。又,上述重量減少率越小越佳。因此,上述重量減少率之下限較佳為0重量%以上,但亦可為0.001重量%以上。若浸漬於NMP後之重量減少率為上述範圍,則可提高耐溶劑性(尤其是對NMP之耐溶劑性)。暫時固定材之上述重量減少率例如可利用所使用之二胺之組成(二胺對NMP之溶解性)進行控制。上述重量減少率之測定方法可依據其他耐化學品性評價之測定程序而進行。 The weight reduction rate of the temporary fixing material after immersion in 100 mL of N-methylpyrrolidone (NMP) at room temperature for 5 minutes is preferably less than 1% by weight, more preferably less than 0.9% by weight, and further Jia is less than 0.8% by weight. Further, the weight reduction rate is preferably as small as possible. Therefore, the lower limit of the weight reduction rate is preferably 0% by weight or more, but may be 0.001% by weight or more. When the weight reduction rate after immersion in NMP is in the above range, solvent resistance (especially resistance to NMP) can be improved. The above weight reduction rate of the temporary fixing material can be controlled, for example, by the composition of the diamine used (the solubility of the diamine to NMP). The method for measuring the weight reduction rate described above can be carried out in accordance with other measurement procedures for chemical resistance evaluation.

(暫時固定材之製造方法) (Method of manufacturing temporary fixing materials)

暫時固定材11之製造方法並無特別限定。作為第1方法,例如可藉由如下方式製造:將包含用以形成低黏著層11b之組合物的溶液塗佈於間隔件上,進行乾燥而形成塗佈層,進而將包含用以形成高黏著層11a之組合物的溶液塗佈於低黏著層11b上及其周圍,進行乾燥而形成塗佈層。亦可於高黏著層11a上貼合保護用之間隔件。於該方法中,形成於低黏著層11b周圍之塗佈層成為周緣部11P之高黏著層11a。作為第2方法,可採用如下程序:預先將高黏著層11a及低黏著層11b分別形成於不同間隔件上,最後將兩者貼合。於該情形時,藉由使高黏著層11a之俯視尺寸大於低黏著層11b之俯視尺寸,而可於低黏著層11b之周圍形成作為周緣部11P之高黏著層11a。作為第3方法,可採用如下程序:將形成於間隔件上之低黏著層11b貼合於支持體12,並於其上貼合另外形成於間隔件上之高黏著層11a。於該情形時,亦可藉由使高黏著層11a之俯視尺寸大於低黏著層11b之俯視尺寸,而於低黏著層11b周圍形成作為周緣部11P之高黏著層11a。進而,於使用上述無機薄膜或其他耐熱性有機薄膜等作為低黏著層11b之情形時,作為第4方法,可採用如下程序:利用蒸鍍或貼合等而於支持體12形成低黏著層11b,並於其上貼合另外形成於間隔件上之高 黏著層11a;或者作為第5方法,可採用如下程序:利用蒸鍍或貼合而於高黏著層11a上形成由無機薄膜等形成之低黏著層11b,並以低黏著層11b露出之面作為貼合面而將其貼合於支持體12。塗佈之溶液之黏度或塗佈量適當設定即可。 The method for producing the temporary fixing member 11 is not particularly limited. As a first method, for example, it can be produced by applying a solution containing a composition for forming the low-adhesion layer 11b to a spacer, drying it to form a coating layer, and further comprising containing it to form a high adhesion. A solution of the composition of the layer 11a is applied onto and around the low-adhesion layer 11b, and dried to form a coating layer. The spacer for protection can also be attached to the high-adhesion layer 11a. In this method, the coating layer formed around the low-adhesion layer 11b becomes the high-adhesion layer 11a of the peripheral edge portion 11P. As a second method, a procedure may be employed in which the high-adhesion layer 11a and the low-adhesion layer 11b are respectively formed on different spacers, and finally the two are bonded together. In this case, by making the planar view of the high-adhesion layer 11a larger than the plan view size of the low-adhesion layer 11b, the high-adhesion layer 11a as the peripheral edge portion 11P can be formed around the low-adhesion layer 11b. As a third method, a procedure may be employed in which the low-adhesion layer 11b formed on the spacer is bonded to the support 12, and the high-adhesion layer 11a additionally formed on the spacer is bonded thereto. In this case, the high-adhesion layer 11a as the peripheral edge portion 11P may be formed around the low-adhesion layer 11b by making the planar view of the high-adhesion layer 11a larger than the plan view size of the low-adhesion layer 11b. Further, when the inorganic thin film or another heat resistant organic thin film or the like is used as the low-adhesion layer 11b, as a fourth method, a procedure may be employed in which the low-adhesion layer 11b is formed on the support 12 by vapor deposition or bonding. And attached to it and additionally formed on the spacer The adhesive layer 11a or the fifth method may be a method in which a low-adhesion layer 11b formed of an inorganic thin film or the like is formed on the high-adhesion layer 11a by vapor deposition or bonding, and the surface of the low-adhesion layer 11b is exposed. The surface is bonded to the support 12. The viscosity or coating amount of the applied solution may be appropriately set.

(透明工件) (transparent workpiece)

作為透明工件13(參照圖2A),只要為具有透明性及耐熱性之材料,則無特別限定,例如可列舉:聚對苯二甲酸乙二酯、聚萘二甲酸乙二酯等聚酯,聚碳酸酯、聚醯亞胺、聚醚醯亞胺、聚醯胺、聚醯胺醯亞胺、全芳香族聚醯胺、聚苯硫醚、芳族聚醯胺(紙)、玻璃、玻璃布、氟樹脂、聚矽氧樹脂、金屬(箔)、紙、FRP(fiber reinforced plastics,纖維強化塑膠)、極薄玻璃、物理強化玻璃、化學強化玻璃等。其中,透明工件較佳為實質上不具有可撓性。所謂實質上不具有可撓性,係指於依據JIS R 1601之3點彎曲試驗中彎曲模數於500MPa以上時被破壞。 The transparent workpiece 13 (see FIG. 2A) is not particularly limited as long as it is a material having transparency and heat resistance, and examples thereof include polyesters such as polyethylene terephthalate and polyethylene naphthalate. Polycarbonate, polyimine, polyetherimide, polyamine, polyamidimide, wholly aromatic polyamine, polyphenylene sulfide, aromatic polyamide (paper), glass, glass Cloth, fluororesin, polyoxyxylene resin, metal (foil), paper, FRP (fiber reinforced plastics, fiber reinforced plastic), ultra-thin glass, physical tempered glass, chemically strengthened glass, and the like. Among them, the transparent workpiece preferably has substantially no flexibility. The term "substantially non-flexible" means that the bending modulus is broken at 500 MPa or more in the three-point bending test according to JIS R 1601.

透明工件13之厚度根據加工後之透明電路基板所組入之器件的設計進行設定即可,但作為厚度之上限,較佳為5mm以下,更佳為1mm以下。又,透明工件之厚度之下限就強度或耐久性之觀點而言,較佳為0.01mm以上,更佳為0.05mm以上。 The thickness of the transparent workpiece 13 may be set according to the design of the device in which the transparent circuit substrate is processed. However, the upper limit of the thickness is preferably 5 mm or less, more preferably 1 mm or less. Further, the lower limit of the thickness of the transparent workpiece is preferably 0.01 mm or more, and more preferably 0.05 mm or more from the viewpoint of strength or durability.

(支持體) (support)

作為支持體12(參照圖2A),並無特別限定,可較佳地列舉SUS板、玻璃板、塑膠板等。作為塑膠板之材料,例如亦可使用低密度聚乙烯、直鏈狀聚乙烯、中密度聚乙烯、高密度聚乙烯、超低密度聚乙烯、無規共聚聚丙烯、嵌段共聚聚丙烯、均聚丙烯、聚丁烯、聚甲基戊烯等聚烯烴、乙烯-乙酸乙烯酯共聚物、離子聚合物樹脂、乙烯-(甲基)丙烯酸共聚物、乙烯-(甲基)丙烯酸酯(無規、交替)共聚物、乙烯-丁烯共聚物、乙烯-己烯共聚物、聚胺基甲酸酯、聚對苯二甲酸乙二 酯、聚萘二甲酸乙二酯等聚酯、聚碳酸酯、聚醯亞胺、聚醚醚酮、聚醯亞胺、聚醚醯亞胺、聚醯胺、全芳香族聚醯胺、聚苯硫醚、芳族聚醯胺(紙)、玻璃、玻璃布、氟樹脂、聚氯乙烯、聚偏二氯乙烯、纖維素系樹脂、聚矽氧樹脂、紙等。 The support 12 (see FIG. 2A) is not particularly limited, and a SUS plate, a glass plate, a plastic plate or the like can be preferably used. As a material of the plastic plate, for example, low density polyethylene, linear polyethylene, medium density polyethylene, high density polyethylene, ultra low density polyethylene, random copolymer polypropylene, block copolymer polypropylene, and both can be used. Polyolefins such as polypropylene, polybutene, polymethylpentene, ethylene-vinyl acetate copolymer, ionic polymer resin, ethylene-(meth)acrylic acid copolymer, ethylene-(meth)acrylate (random , alternating) copolymer, ethylene-butene copolymer, ethylene-hexene copolymer, polyurethane, polyethylene terephthalate Polyesters such as esters, polyethylene naphthalates, polycarbonates, polyimines, polyetheretherketones, polyimines, polyetherimine, polyamines, wholly aromatic polyamines, poly Phenylene sulfide, aromatic polyamine (paper), glass, glass cloth, fluororesin, polyvinyl chloride, polyvinylidene chloride, cellulose resin, polyoxyl resin, paper, and the like.

支持體12可單獨使用,亦可組合2種以上使用。支持體之厚度並無特別限定,通常為約10μm~20mm。 The support 12 can be used singly or in combination of two or more. The thickness of the support is not particularly limited and is usually about 10 μm to 20 mm.

(積層體之形成) (formation of laminated body)

以下,對使用圖1A及1B所示之暫時固定材11之情形進行說明。圖2A~2D係用以說明本發明之一實施形態之透明電路基板之製造方法的剖面模式圖。利用上述第1或第2方法製作暫時固定材11之情形時,自所製作之暫時固定材11剝離間隔件,並以暫時固定材11之下表面作為貼合面而貼合於支持體12(參照圖2A)。貼合方法並無特別限定,較佳為利用壓接之方法。壓接通常藉由壓接輥等擠壓機構一面進行擠壓一面進行壓接。作為壓接之條件,較佳為20℃~150℃、0.01MPa~10MPa、1mm/sec~100mm/sec。如上所述,暫時固定材11因黏著力高於低黏著層11b之高黏著層11a於下表面露出,故可牢牢地貼合於支持體1。於利用上述第3至第5方法製作暫時固定材11之情形時,因暫時固定材11於貼合於支持體12上之狀態下被製作,故可直接用於下一步驟。 Hereinafter, a case where the temporary fixing member 11 shown in FIGS. 1A and 1B is used will be described. 2A to 2D are schematic cross-sectional views for explaining a method of manufacturing a transparent circuit substrate according to an embodiment of the present invention. When the temporary fixing material 11 is produced by the above-described first or second method, the spacer is peeled off from the temporarily fixed material 11 to be produced, and the lower surface of the temporary fixing member 11 is used as a bonding surface to be bonded to the support 12 ( Refer to Figure 2A). The bonding method is not particularly limited, and a method using pressure bonding is preferred. The crimping is usually performed by pressing while being pressed by a pressing mechanism such as a crimping roller. The conditions for the pressure bonding are preferably 20 ° C to 150 ° C, 0.01 MPa to 10 MPa, and 1 mm / sec to 100 mm / sec. As described above, since the temporary fixing member 11 is exposed on the lower surface of the lower adhesive layer 11a having a higher adhesive force than the low-adhesion layer 11b, it can be firmly adhered to the support 1. In the case where the temporary fixing member 11 is produced by the above-described third to fifth methods, since the temporary fixing member 11 is produced in a state of being bonded to the support 12, it can be directly used in the next step.

繼而,可藉由於暫時固定材11上貼合透明工件13而形成積層體10。貼合方法並無特別限定,較佳為壓接。壓接通常藉由壓接輥或加壓機等擠壓機構而進行擠壓。就凹凸追隨性、被黏著體、支持體之總厚之觀點而言,較理想為加壓方式。作為壓接之條件,較佳為:溫度:40℃~200℃、擠壓:0.1kg/cm2~100kg/cm2、減壓環境:1~100torr(1.33×102Pa~1.33×104Pa)、時間:60~600s。 Then, the laminated body 10 can be formed by bonding the transparent workpiece 13 to the temporary fixing member 11. The bonding method is not particularly limited, and is preferably pressure bonding. The crimping is usually performed by a pressing mechanism such as a crimping roller or a press machine. From the viewpoint of the unevenness of the irregularities, the thickness of the adherend, and the total thickness of the support, it is preferred to be a pressurization method. As a condition for crimping, it is preferably: temperature: 40 ° C to 200 ° C, extrusion: 0.1 kg / cm 2 to 100 kg / cm 2 , decompression environment: 1 to 100 torr (1.33 × 10 2 Pa ~ 1.33 × 10 4 Pa), time: 60~600s.

[加工步驟] [Processing steps]

如圖2B所示般,於加工步驟中,藉由包括200℃以上之加熱處理的圖案加工而於上述透明工件13形成圖案14而製作透明電路基板15。 As shown in FIG. 2B, in the processing step, the transparent circuit substrate 15 is formed by forming the pattern 14 on the transparent workpiece 13 by pattern processing including heat treatment at 200 ° C or higher.

作為對透明工件13之加工,並無特別限定,可根據加工後之透明電路基板15所應用之裝置設計而採用先前公知之製程,代表性情況下可列舉圖案形成。作為圖案14,可列舉為了將透明工件用於作為其用途之軟性電路基板(FPC)或有機EL面板之基底基板、或電子紙、LCD、以有機EL為顯示部之顯示器之驅動電路、濾色器、以及觸控面板之電路基板或太陽能電池之製膜製程等用途而必需之形成於該透明工件上的電路或薄膜、元件等。作為該圖案,為上述用途所必需者即可,圖案之形狀或材質可適當選擇。 The processing of the transparent workpiece 13 is not particularly limited, and a conventionally known process can be employed depending on the device design applied to the processed transparent circuit substrate 15, and representative examples thereof include pattern formation. Examples of the pattern 14 include a transparent substrate for use as a base substrate of a flexible circuit board (FPC) or an organic EL panel, or an electronic paper, an LCD, a display circuit using an organic EL as a display portion, and a color filter. Circuits, films, components, and the like formed on the transparent workpiece, which are necessary for applications such as a circuit board of a touch panel or a film forming process of a solar cell. The pattern may be required for the above-described use, and the shape or material of the pattern may be appropriately selected.

作為透明電路基板,於製成形成有TFT(驅動電路)或濾色器等之電路基板的構件之情形時,可藉由經過公知之光微影步驟而製作電路基板。作為代表性之光微影步驟,可藉由反覆有機或無機薄膜之形成、光阻組合物之塗佈、光阻塗膜之烘乾、曝光、光阻塗膜之蝕刻、上述薄膜之蝕刻、光阻膜之去除等程序而形成所需之圖案電路。 When a transparent circuit board is used as a member in which a circuit board such as a TFT (drive circuit) or a color filter is formed, a circuit board can be produced by a known photolithography process. As a representative photolithography step, the formation of the organic or inorganic thin film, the coating of the photoresist composition, the drying of the photoresist film, the exposure, the etching of the photoresist film, the etching of the above film, A process such as removal of the photoresist film forms a desired pattern circuit.

於該加工步驟中,因如上述般進行薄膜之形成、光阻膜之烘乾或蝕刻後之清洗及乾燥等,故暫時固定材11要求光阻膜或鍍敷配線形成時之耐化學品性、薄膜形成或烘乾、乾燥時之耐熱性、及利用濺鍍等形成薄膜(配線)時之耐真空性。先前,由於如上述之加熱處理或真空處理而由暫時固定材11產生釋氣,於暫時固定材11與透明工件13之界面或暫時固定材11與支持體13之界面產生氣泡、或產生由釋氣引起之薄膜形成不良,或者由於如上述之化學處理而暫時固定材11改性或變形,因此有時無法進行所需之圖案形成。本發明中使用耐熱性、耐化學品性、耐真空性之暫時固定材11,因此可進行目標之圖案形成。 In the processing step, since the film formation, the drying of the photoresist film, or the cleaning and drying after the etching are performed as described above, the temporary fixing member 11 is required to have chemical resistance when the photoresist film or the plating wiring is formed. The heat resistance during film formation or drying, drying, and the vacuum resistance when forming a film (wiring) by sputtering or the like. Previously, due to the heat treatment or the vacuum treatment as described above, the outgas is generated by the temporary fixing member 11, and the interface between the temporary fixing member 11 and the transparent workpiece 13 or the interface between the temporary fixing member 11 and the support 13 generates bubbles or generates a release. The formation of a film due to gas is poor, or the temporary fixing member 11 is modified or deformed by the chemical treatment as described above, and thus the desired pattern formation may not be performed. In the present invention, the temporary fixing member 11 having heat resistance, chemical resistance, and vacuum resistance is used, so that the target pattern can be formed.

作為透明電路基板,可製成單面電路、雙面電路、多層電路等之各透明電路基板,不僅可形成電路,亦可安裝元件等。於透明工件 之兩面形成電路時,可採用如下方法:於單面形成電路後,將該電路形成面經由暫時固定材而固定於支持體,並於另一面形成電路。 As the transparent circuit substrate, each of the transparent circuit substrates such as a single-sided circuit, a double-sided circuit, and a multilayer circuit can be formed, and not only a circuit but also a component can be mounted. Transparent workpiece When the circuit is formed on both sides, a method may be employed in which the circuit forming surface is fixed to the support via a temporary fixing member and the circuit is formed on the other surface after forming the circuit on one side.

於透明工件上形成例如有機電晶體之情形時,作為其材料,並無特別限定,可使用低分子系有機半導體材料、高分子系有機半導體材料、有機/無機混合半導體材料,作為閘極絕緣材料,可使用有機聚合物材料或無機材料。 In the case where an organic transistor is formed on a transparent workpiece, for example, a material thereof is not particularly limited, and a low molecular organic semiconductor material, a polymer organic semiconductor material, or an organic/inorganic hybrid semiconductor material can be used as the gate insulating material. An organic polymer material or an inorganic material can be used.

作為形成有機電晶體之方法,可列舉轉印法等,電極或配線可藉由於膜上直接繪製而形成。作為該等之材料,可採用含有銀等金屬奈米粒子之金屬奈米膏或墨水、含有金屬氧化物之奈米粒子之膏或墨水。又,亦可採用導電性聚合物之溶液等。作為上述電晶體、電極/配線之繪製方法,可採用噴墨法、網版印刷法、凹版印刷、軟版印刷、奈米印刷技術。進而亦可藉由轉印而於膜上形成TFT電路等。 As a method of forming an organic transistor, a transfer method or the like can be cited, and an electrode or a wiring can be formed by directly drawing on a film. As such materials, a metal nanopaste or ink containing metal nanoparticles such as silver, or a paste or ink containing metal oxide-containing nanoparticles can be used. Further, a solution of a conductive polymer or the like can also be used. As the method of drawing the above-mentioned transistor and electrode/wiring, an inkjet method, a screen printing method, a gravure printing, a flexographic printing, or a nano printing technique can be employed. Further, a TFT circuit or the like can be formed on the film by transfer.

於以上述方式製造之軟性電路基板上,可進而形成用以形成液晶顯示器或有機EL顯示器等之顯示層而必需的層,且以成為各顯示器所對應之層結構之方式進行加工。 On the flexible circuit board manufactured as described above, a layer necessary for forming a display layer such as a liquid crystal display or an organic EL display can be further formed, and processing can be performed so as to have a layer structure corresponding to each display.

如圖2B所示般,於形成有透明電路基板15之積層體10之俯視中,上述透明工件13上之圖案加工區域之外周(圖案14之最外周)較佳為位於較上述低黏著層11b之外周內側。藉此,即便於將透明電路基板之圖案加工區域之外周部切下之情形、或將透明電路基板逐個圖案加工區域單片化之情形時,亦可將低黏著層11b分配於切下之透明電路基板,而可容易地進行自支持體12之剝離。 As shown in FIG. 2B, in the plan view of the laminated body 10 on which the transparent circuit substrate 15 is formed, the outer periphery of the pattern processing region on the transparent workpiece 13 (the outermost periphery of the pattern 14) is preferably located on the lower adhesive layer 11b. Outside the inner circumference. Therefore, even when the peripheral portion of the transparent circuit substrate is cut out, or when the transparent circuit substrate is diced one by one, the low-adhesion layer 11b can be distributed to the transparent portion. The circuit board can be easily peeled off from the support 12.

[剝離步驟] [Peeling step]

繼而,將透明電路基板15自上述暫時固定材11剝離。具體而言,首先如圖2C及2D所示般,以暫時固定材11之支持體12側之面為界面,將支持體12與暫時固定材11剝離。如上所述,暫時固定材11不僅具有高黏著層11a,亦具有黏著力低於高黏著層11a之低黏著層11b, 因此可藉由外力而容易地將支持體與透明電路基板上下分離。 Then, the transparent circuit board 15 is peeled off from the temporary fixing member 11. Specifically, first, as shown in FIGS. 2C and 2D, the support 12 and the temporary fixing member 11 are peeled off with the surface of the temporary fixing member 11 on the side of the support 12 as an interface. As described above, the temporary fixing member 11 has not only the high adhesive layer 11a but also the low adhesive layer 11b having a lower adhesive force than the high adhesive layer 11a. Therefore, the support can be easily separated from the transparent circuit substrate by an external force.

又,暫時固定材11之中央部11C係由高黏著層11a與低黏著層11b積層而形成。因此,由高黏著層11a與低黏著層11b積層而形成之中央部11C與僅由高黏著層11a形成之周緣部11P相比,黏著力相對較低。藉此,可藉由施加外力而容易地將支持體與透明電路基板上下分離。又,因於暫時固定材11之周緣部11P形成有高黏著層11a,故可藉由利用溶劑使高黏著層11a溶解、或利用切割器或雷射等而物理性地切出切口,而阻斷周緣部11P對中央部11C之黏著力,而可更容易地將暫時固定材11自支持體12剝離。作為阻斷高黏著層11a之黏著力或使該黏著力降低之方法,可列舉:利用溶劑使高黏著層11a溶解而阻斷黏著力之方法、利用切割器或雷射等於高黏著層11a上物理性地切出切口而阻斷黏著力之方法、預先由藉由加熱而黏著力降低之材料形成高黏著層11a並藉由加熱而使黏著力降低的方法等。於圖2C中,於剝離前,於較中央部11C之外周稍微內側之位置物理性地切出切口。藉此,阻斷周緣部11P對中央部11C之黏著力,於中央部11C變得僅低黏著層11b對支持體具有黏著力,因此可使中央部11C自支持體12之剝離變得更容易。 Further, the central portion 11C of the temporary fixing member 11 is formed by laminating a high-adhesion layer 11a and a low-adhesion layer 11b. Therefore, the central portion 11C formed by laminating the high-adhesion layer 11a and the low-adhesion layer 11b has a relatively low adhesive force as compared with the peripheral portion 11P formed only of the high-adhesion layer 11a. Thereby, the support can be easily separated from the transparent circuit substrate by applying an external force. Further, since the high-adhesion layer 11a is formed on the peripheral edge portion 11P of the temporary fixing member 11, the high-adhesion layer 11a can be dissolved by a solvent or the slit can be physically cut by a cutter or a laser. The adhesion of the peripheral portion 11P to the central portion 11C is broken, and the temporary fixing member 11 can be more easily peeled off from the support 12. As a method of blocking the adhesion of the high-adhesion layer 11a or reducing the adhesion, a method of dissolving the high-adhesion layer 11a by a solvent to block the adhesion, and using a cutter or a laser to be equal to the high-adhesion layer 11a A method of physically cutting out a slit to block an adhesive force, a method of forming a high-adhesion layer 11a by a material whose adhesion is lowered by heating, and lowering an adhesive force by heating. In Fig. 2C, before the peeling, the slit is physically cut at a position slightly inside the outer circumference of the central portion 11C. Thereby, the adhesion of the peripheral portion 11P to the central portion 11C is blocked, and only the low-adhesion layer 11b has an adhesive force to the support in the central portion 11C, so that the separation of the central portion 11C from the support 12 can be made easier. .

繼而,如圖2D所示般,可藉由將透明電路基板15與暫時固定材11一併自支持體12剝離而回收透明電路基板15。包含形成有圖案14之圖案加工區域的透明電路基板15位於低黏著層11b之上方,因此可容易地進行透明電路基板15自支持體12之剝離。再者,於圖2A~2D中,表示於暫時固定材11上製作1個透明電路基板15之態樣,但並不限定於此,亦可採用如下程序:於暫時固定材11上貼合複數個透明工件,對各透明工件進行圖案加工而製作複數個透明電路基板,其後進行如上述之高黏著層11a之黏著力之遮斷,而回收各透明電路基板。或者,亦可採用如下程序:對1個透明工件形成複數個圖案加工區 域,逐個圖案加工區域進行切割等,藉此製作複數個透明電路基板,其後進行如上述之高黏著層11a之黏著力之遮斷,而回收各透明電路基板。 Then, as shown in FIG. 2D, the transparent circuit substrate 15 can be recovered by peeling the transparent circuit substrate 15 together with the temporary fixing member 11 from the support 12. The transparent circuit substrate 15 including the pattern processing region in which the pattern 14 is formed is positioned above the low-adhesion layer 11b, so that the peeling of the transparent circuit substrate 15 from the support 12 can be easily performed. 2A to 2D, a state in which one transparent circuit substrate 15 is formed on the temporary fixing member 11, but the present invention is not limited thereto, and a procedure may be employed in which a plurality of temporary fixing members 11 are attached to each other. Each of the transparent workpieces is patterned to form a plurality of transparent circuit substrates, and then the adhesive force of the high-adhesion layer 11a is blocked as described above to recover the transparent circuit substrates. Alternatively, the following procedure may be employed: forming a plurality of pattern processing zones for one transparent workpiece In the field, a plurality of transparent circuit substrates are formed by patterning each of the pattern processing regions, and thereafter, the adhesion of the high-adhesion layer 11a as described above is blocked, and the respective transparent circuit substrates are recovered.

於與暫時固定材11一併剝離之透明電路基板15中,暫時固定材可不實施特別處理而藉由剝離自透明電路基板15取下暫時固定材11。 In the transparent circuit board 15 which is peeled off together with the temporary fixing material 11, the temporary fixing material 11 can be removed from the transparent circuit board 15 without being subjected to special treatment.

<第2實施形態> <Second embodiment>

本發明之暫時固定材並不限定於暫時固定材11之形狀。圖3係表示本發明之第2實施形態之暫時固定材之剖面模式圖。如圖3所示般,暫時固定材21中,周緣部21P由高黏著層21a形成,並且較周緣部21P內側之中央部21C由低黏著層21b形成。低黏著層21b之黏著力低於高黏著層21a之黏著力。 The temporary fixing material of the present invention is not limited to the shape of the temporary fixing member 11. Fig. 3 is a schematic cross-sectional view showing a temporary fixing member according to a second embodiment of the present invention. As shown in FIG. 3, in the temporary fixing member 21, the peripheral edge portion 21P is formed of the high-adhesion layer 21a, and the central portion 21C on the inner side of the peripheral edge portion 21P is formed of the low-adhesion layer 21b. The adhesion of the low adhesion layer 21b is lower than the adhesion of the high adhesion layer 21a.

於暫時固定材21中,因中央部21C由低黏著層21b形成,故於剝離步驟中,可藉由外力而容易地將支持體與透明電路基板上下分離。 In the temporary fixing member 21, since the central portion 21C is formed of the low-adhesion layer 21b, the support and the transparent circuit substrate can be easily separated up and down by an external force in the peeling step.

暫時固定材21之中央部21C由低黏著層21b形成,且低黏著層21b亦與支持體連接,因此於剝離步驟時,容易將該暫時固定材21自支持體剝離。因此,容易再利用支持體。又,因高黏著層21a形成於暫時固定材21之周緣部21P,故於剝離步驟中,利用溶劑使高黏著層21a溶解,或利用切割器或雷射等而物理性地切出切口,從而阻斷高黏著層21a對中央部21C之黏著力,而可更容易地將暫時固定材21自支持體剝離。 The central portion 21C of the temporary fixing member 21 is formed of the low-adhesion layer 21b, and the low-adhesion layer 21b is also connected to the support. Therefore, in the peeling step, the temporary fixing member 21 is easily peeled off from the support. Therefore, it is easy to reuse the support. Further, since the high-adhesion layer 21a is formed on the peripheral edge portion 21P of the temporary fixing member 21, the high-adhesion layer 21a is dissolved by a solvent in the peeling step, or the slit is physically cut by a cutter or a laser. The adhesion of the high-adhesion layer 21a to the central portion 21C is blocked, and the temporary fixing member 21 can be more easily peeled off from the support.

關於包括暫時固定材21之組成等之其他事項,可設為與第1實施形態相同。 Other matters including the composition of the temporary fixing member 21 and the like can be the same as in the first embodiment.

<第3實施形態> <Third embodiment>

本發明之暫時固定材並不限定於暫時固定材11、21之形狀。圖4係表示本發明之第3實施形態之暫時固定材的剖面模式圖。如圖4所示般,暫時固定材31係由高黏著層31a與低黏著層31b積層而形成。低黏 著層31b之黏著力低於高黏著層31a之黏著力。 The temporary fixing material of the present invention is not limited to the shape of the temporary fixing members 11, 21. Fig. 4 is a cross-sectional schematic view showing a temporary fixing member according to a third embodiment of the present invention. As shown in Fig. 4, the temporary fixing member 31 is formed by laminating a high-adhesion layer 31a and a low-adhesion layer 31b. Low viscosity The adhesion of the layer 31b is lower than the adhesion of the high adhesion layer 31a.

於暫時固定材31中存在高黏著層31a,因此於加工步驟等中可將透明電路基板固定於支持體。又,不僅具有高黏著層31a,亦具有黏著力低於高黏著層31a之低黏著層31b,因此於剝離步驟中,可藉由外力而容易地將支持體與透明電路基板上下分離。 Since the high-adhesion layer 31a is present in the temporary fixing member 31, the transparent circuit board can be fixed to the support in the processing step or the like. Further, not only the high-adhesion layer 31a but also the low-adhesion layer 31b having a lower adhesive force than the high-adhesion layer 31a is provided. Therefore, in the peeling step, the support and the transparent circuit substrate can be easily separated from each other by an external force.

高黏著層31a之厚度並無特別限定,例如為10μm以上,較佳為20μm以上。若為10μm以上,則可追隨透明工件表面之凹凸,而可將暫時固定材31無間隙地填充於透明工件與支持體之間。又,高黏著層31a之厚度例如為100μm以下,較佳為50μm以下。若為100μm以下,則可抑制或防止厚度不均或加熱時之收縮/膨脹。 The thickness of the high-adhesion layer 31a is not particularly limited, and is, for example, 10 μm or more, and preferably 20 μm or more. When the thickness is 10 μm or more, the unevenness of the surface of the transparent workpiece can be followed, and the temporary fixing member 31 can be filled between the transparent workpiece and the support without a gap. Further, the thickness of the high-adhesion layer 31a is, for example, 100 μm or less, preferably 50 μm or less. When it is 100 μm or less, thickness unevenness or shrinkage/expansion upon heating can be suppressed or prevented.

低黏著層31b之厚度並無特別限定,例如為1μm以上,較佳為5μm以上。若為1μm以上,則可追隨支持體表面之凹凸,而可將暫時固定材31無間隙地填充於透明工件與支持體之間。又,低黏著層31b之厚度例如為50μm以下,較佳為20μm以下。若為50μm以下,則可抑制或防止厚度不均或加熱時之收縮/膨脹。 The thickness of the low-adhesion layer 31b is not particularly limited, and is, for example, 1 μm or more, and preferably 5 μm or more. When it is 1 μm or more, the unevenness of the surface of the support can be followed, and the temporary fixing material 31 can be filled between the transparent workpiece and the support without a gap. Further, the thickness of the low-adhesion layer 31b is, for example, 50 μm or less, preferably 20 μm or less. When it is 50 μm or less, thickness unevenness or shrinkage/expansion during heating can be suppressed or prevented.

關於低黏著層31b之黏著力,例如於溫度23±2℃、剝離速度300mm/min之條件下對玻璃板之90°剝離力較佳為未達0.05N/20mm,更佳為0.04N/20mm以下。若未達0.05N/20mm,則可容易地將透明電路基板自支持體分離。另一方面,該90°剝離力之下限較佳為0.01N/20mm以上,更佳為0.02N/20mm以上,進而較佳為0.03N/20mm以上。若為0.01N/20mm以上,則可將透明工件良好地固定於支持體,而可良好地進行圖案加工。 Regarding the adhesion of the low-adhesion layer 31b, for example, at a temperature of 23±2° C. and a peeling speed of 300 mm/min, the 90° peeling force to the glass plate is preferably less than 0.05 N/20 mm, more preferably 0.04 N/20 mm. the following. If it is less than 0.05 N/20 mm, the transparent circuit substrate can be easily separated from the support. On the other hand, the lower limit of the 90° peeling force is preferably 0.01 N/20 mm or more, more preferably 0.02 N/20 mm or more, and still more preferably 0.03 N/20 mm or more. When it is 0.01 N/20 mm or more, the transparent workpiece can be favorably fixed to the support, and the pattern processing can be performed favorably.

關於包括暫時固定材31之組成等之其他事項,可設為與第1實施形態相同。 Other matters including the composition of the temporary fixing member 31 and the like can be the same as in the first embodiment.

<第4實施形態> <Fourth embodiment>

本發明之暫時固定材並不限定於暫時固定材11、21、31之形狀。 圖5係表示本發明之第4實施形態之暫時固定材的剖面模式圖。如圖5所示,於積層體40中,低黏著層41b係配置於透明工件43與支持體42之間,高黏著層41a係以將透明工件43之外周側面與支持體42之外周側面連結之方式配置。藉此,高黏著層41a並未附著於透明工件43之形成有圖案44之圖案加工區域,而可將透明工件43於乾淨狀態下進行加工。又,於透明工件43自支持體42之剝離中,僅將位於外周之高黏著層41a之部分剝離或切下即可,因此可謀求生產效率之提高。 The temporary fixing material of the present invention is not limited to the shape of the temporary fixing members 11, 21, and 31. Fig. 5 is a cross-sectional schematic view showing a temporary fixing member according to a fourth embodiment of the present invention. As shown in FIG. 5, in the laminated body 40, the low-adhesion layer 41b is disposed between the transparent workpiece 43 and the support 42, and the high-adhesion layer 41a is connected to the outer peripheral side of the transparent workpiece 43 and the outer peripheral side of the support 42. The way it is configured. Thereby, the high-adhesion layer 41a is not attached to the pattern processing region in which the pattern 44 of the transparent workpiece 43 is formed, and the transparent workpiece 43 can be processed in a clean state. Further, in the peeling of the transparent workpiece 43 from the support 42, only the portion of the high-adhesion layer 41a located on the outer periphery can be peeled off or cut off, so that the production efficiency can be improved.

於高黏著層41a配置於積層體40之外周側面之情形時,於積層體40之側視中,高黏著層41a之高度h較佳為積層體之高度H之50%以上且未達100%,較佳為60%以上且未達90%。藉此,可使透明工件43牢牢地固定於支持體42,並且防止高黏著層41a向透明工件43之加工面折入,而可乾淨地加工透明工件43。 When the high-adhesion layer 41a is disposed on the outer peripheral side surface of the laminated body 40, the height h of the high-adhesion layer 41a is preferably 50% or more and less than 100% of the height H of the laminated body in the side view of the laminated body 40. Preferably, it is 60% or more and less than 90%. Thereby, the transparent workpiece 43 can be firmly fixed to the support body 42, and the high-adhesion layer 41a can be prevented from being folded into the machined surface of the transparent workpiece 43, and the transparent workpiece 43 can be cleanly processed.

高黏著層41a之厚度(自積層體40之外周側面之突出量)並無特別限定,其上限較佳為500μm以下,更佳為200μm以下。藉此,可防止高黏著層41a向圖案加工區域折入,或者防止於較理想為高黏著層41a不向支持體42附著之情形時而高黏著層41a向支持體42附著。又,上述厚度之下限較佳為5μm以上,更佳為10μm以上。藉此,可使透明工件43向支持體42之固定變得更為牢固。 The thickness of the high-adhesion layer 41a (the amount of protrusion from the outer peripheral side surface of the laminated body 40) is not particularly limited, and the upper limit thereof is preferably 500 μm or less, and more preferably 200 μm or less. Thereby, it is possible to prevent the high-adhesion layer 41a from being folded into the pattern processing region, or to prevent the high-adhesion layer 41a from adhering to the support 42 when the high-adhesion layer 41a is not attached to the support 42. Further, the lower limit of the thickness is preferably 5 μm or more, and more preferably 10 μm or more. Thereby, the fixing of the transparent workpiece 43 to the support body 42 can be made stronger.

包含暫時固定材41之積層體40之形成方法例如可採用如下程序:將形成於間隔件上之低黏著層41b貼合於支持體42,於低黏著層41b上貼合透明工件43而製成低黏著積層體,此後,以遍及低黏著積層體之外周側面(即,透明工件43之外周側面之一部分、低黏著層41b之外周側面、及支持體42之外周側面之一部分)之方式形成高黏著層41a。作為高黏著層41a向低黏著積層體之外周側面之形成方法,可採用如下程序:將高黏著層41a形成用之組合物溶液塗佈於該外周側面。 For example, a method of forming the laminated body 40 including the temporary fixing member 41 may be performed by bonding the low-adhesion layer 41b formed on the spacer to the support member 42, and bonding the transparent workpiece 43 to the low-adhesion layer 41b. The low-adhesive laminated body is thereafter formed to be high over the outer peripheral side of the low-adhesive laminated body (that is, one portion of the outer peripheral side of the transparent workpiece 43, the outer peripheral side of the low-adhesion layer 41b, and one of the outer peripheral sides of the support 42). Adhesive layer 41a. As a method of forming the high-adhesion layer 41a toward the outer peripheral side surface of the low-adhesion layered body, a procedure may be employed in which a composition solution for forming the high-adhesion layer 41a is applied to the outer peripheral side surface.

關於包括暫時固定材41之組成等之其他事項,可設為與第1實施形態相同。 Other matters including the composition of the temporary fixing member 41 and the like can be the same as in the first embodiment.

<其他實施形態> <Other Embodiments>

俯視暫時固定材時高黏著層及低黏著層之形狀並不限定於矩形,亦可分別獨立為圓形、多角形、橢圓形等其他形狀。 The shape of the high-adhesion layer and the low-adhesion layer when the temporary fixing material is viewed from above is not limited to a rectangular shape, and may be independently formed into other shapes such as a circle, a polygon, and an ellipse.

以上,已對本實施形態之透明電路基板之製造方法之一例進行說明,但本發明之透明電路基板之製造方法並不限定於上述例,可於本發明之主旨之範圍內適當變更。 In the above, the method of manufacturing the transparent circuit board of the present embodiment has been described. However, the method of manufacturing the transparent circuit board of the present invention is not limited to the above examples, and can be appropriately changed within the scope of the gist of the invention.

[實施例] [Examples]

以下,針對本發明使用實施例詳細地進行說明,只要本發明不偏離其主旨,則並不限定於以下之實施例。 Hereinafter, the embodiments of the present invention will be described in detail, and the present invention is not limited to the following embodiments as long as the present invention does not deviate from the gist of the invention.

實施例中所使用之成分如下所述。 The ingredients used in the examples are as follows.

PMDA:均苯四甲酸二酐(分子量:218.1) PMDA: pyromellitic dianhydride (molecular weight: 218.1)

ELASMER1000:Ihara Chemical Industry公司製造之具有烷基醚結構之二胺(分子量:1229.7) ELASMER1000: Diamine with alkyl ether structure manufactured by Ihara Chemical Industry Co., Ltd. (molecular weight: 1229.7)

Dymer1075:Croda Japan公司製造之直鏈伸烷基二胺(分子量:537.0) Dymer 1075: Linear alkyl diamine manufactured by Croda Japan Co., Ltd. (molecular weight: 537.0)

TFMB:2,2'-雙(三氟甲基)聯苯胺(分子量:320.2) TFMB: 2,2'-bis(trifluoromethyl)benzidine (molecular weight: 320.2)

DDE:4,4'-二胺基二苯醚(分子量:200.2) DDE: 4,4'-diaminodiphenyl ether (molecular weight: 200.2)

NMP:N-甲基-2-吡咯啶酮 NMP: N-methyl-2-pyrrolidone

DMAc:N,N-二甲基乙醯胺 DMAc: N,N-dimethylacetamide

市售聚醯亞胺片材:東麗杜邦公司製造之聚醯亞胺膜「Kapton(註冊商標)20EN」 Commercially available polyimine sheet: Polyethylenimine film manufactured by Toray Dupont Co., Ltd. "Kapton (registered trademark) 20EN"

(實施例1) (Example 1)

於氮氣流下之環境下,將ELASMER1000 33.95g、DDE 17.42g、及PMDA 25g分別於80℃下混合於305.5g之NMP中,進行反應,而獲 得高黏著層用之聚醯胺酸溶液A1。又,依據表1之低黏著層用之組成,利用與聚醯胺酸溶液A1相同之方法而獲得聚醯胺酸溶液A2。將所獲得之聚醯胺酸溶液A1進行冷卻直至成為23℃,塗佈於間隔件,於90℃下乾燥3分鐘,而獲得厚度10μm之聚醯胺酸片材A1(高黏著層之前驅物)。同樣地利用聚醯胺酸溶液A2而獲得厚度5μm之聚醯胺酸片材A2(低黏著層之前驅物)。 Under the nitrogen flow, ELASMER1000 33.95g, DDE 17.42g, and PMDA 25g were mixed in 305.5g of NMP at 80 ° C, respectively, to obtain the reaction. A polyamic acid solution A1 for a high adhesion layer is obtained. Further, according to the composition for the low-adhesion layer of Table 1, the poly-proline solution A2 was obtained by the same method as the polyamic acid solution A1. The obtained polyaminic acid solution A1 was cooled to 23 ° C, applied to a separator, and dried at 90 ° C for 3 minutes to obtain a polyacrylic acid sheet A1 having a thickness of 10 μm (high adhesion layer precursor) ). Similarly, a polyaminic acid sheet A2 (low adhesion layer precursor) having a thickness of 5 μm was obtained by using polyamic acid solution A2.

將聚醯胺酸片材A2形成120mm×120mm之尺寸,並於90℃下以相互重心大致一致之方式貼合於形成200mm×200mm之尺寸之聚醯胺酸片材A1上,而獲得聚醯胺酸片材A。使所獲得之聚醯胺酸片材A於10Pa以下之真空環境下、於350℃×1.5hr之條件下醯亞胺化,而獲得作為高黏著層之聚醯亞胺片材A1與作為低黏著層之聚醯亞胺片材A2的積層體,即暫時固定材A。 The polyamic acid sheet A2 was formed into a size of 120 mm × 120 mm, and bonded to a polylysine sheet A1 having a size of 200 mm × 200 mm at a temperature substantially coincident with each other at 90 ° C to obtain a polyfluorene sheet. Amino acid sheet A. The polyamic acid sheet A obtained is imidized under a vacuum atmosphere of 10 Pa or less at 350 ° C for 1.5 hr to obtain a polyimine sheet A1 as a high adhesion layer and as a low The laminate of the adhesive layer of the polyimide sheet A2, that is, the temporary fixing material A.

將所獲得之暫時固定材A於90℃下以聚醯亞胺片材A2之部分處於中央的方式貼合於長150mm×寬150mm×厚1mm之玻璃板,沿著玻璃板之外周部切下暫時固定材A,而獲得附帶玻璃板之暫時固定材A。 The obtained temporary fixing material A was bonded to a glass plate having a length of 150 mm × a width of 150 mm × a thickness of 1 mm at a temperature of 90 ° C at a central portion of the polyimide film A2, and cut along the outer periphery of the glass plate. The material A is temporarily fixed, and the temporary fixing material A with the glass plate is obtained.

(實施例2) (Example 2)

使高黏著層及低黏著層之各層之組成及厚度依據表1,除此以外,以與實施例1相同之方式獲得暫時固定材B及附帶玻璃板之暫時固定材B。 The temporary fixing material B and the temporary fixing material B with the glass plate were obtained in the same manner as in the first embodiment except that the composition and thickness of each of the high-adhesive layer and the low-adhesive layer were in accordance with Table 1.

(實施例3) (Example 3)

依據表1之組成,以與實施例1相同之程序獲得作為高黏著層之前驅物的厚度10μm之聚醯胺酸片材C1。 According to the composition of Table 1, a polyacetic acid sheet C1 having a thickness of 10 μm as a precursor of the high adhesion layer was obtained by the same procedure as in Example 1.

另外,於長150mm×寬150mm×厚1mm之玻璃板形成120mm×120mm×厚50nm之鋁蒸鍍膜C2(蒸鍍裝置:ULVAC公司製造之「UPC-410」,條件:70A、10s),設為低黏著層。 In addition, an aluminum vapor-deposited film C2 of 120 mm × 120 mm × 50 nm thick was formed on a glass plate having a length of 150 mm × a width of 150 mm × a thickness of 1 mm (a vapor deposition device: "UPC-410" manufactured by ULVAC Co., Ltd., conditions: 70 A, 10 s), and was set to Low adhesion layer.

將形成200mm×200mm尺寸之聚醯胺酸片材C1於90℃下以相互 重心大致一致之方式貼合於所形成之鋁蒸鍍膜C2上。繼而,使貼合之聚醯胺酸片材C1於350℃×1.5hr之條件下、於10Pa以下之真空環境下醯亞胺化,而獲得作為聚醯亞胺片材C1與鋁蒸鍍膜C2之積層體的暫時固定材C。 Polyacrylic acid sheet C1 of 200 mm × 200 mm size will be formed at 90 ° C to each other The aluminum vapor deposited film C2 is bonded to the formed aluminum foil in a manner that the center of gravity is substantially uniform. Then, the laminated polylysic acid sheet C1 was imidized under vacuum at 350 ° C × 1.5 hr in a vacuum environment of 10 Pa or less to obtain a polytheneimide sheet C1 and an aluminum vapor-deposited film C2. The temporary fixing material C of the laminated body.

最後,沿著玻璃板之外周部切下暫時固定材C,而獲得附帶玻璃板之暫時固定材C。 Finally, the temporary fixing material C was cut along the outer peripheral portion of the glass sheet to obtain a temporary fixing material C attached to the glass sheet.

(實施例4) (Example 4)

依據表1之組成,以與實施例1相同之程序獲得作為高黏著層之前驅物的厚度20μm之聚醯胺酸片材D1。將市售聚醯亞胺片材(Kapton(註冊商標))D2形成為120mm×120mm之尺寸,並於90℃下以相互重心大致一致之方式貼合於形成為200mm×200mm之尺寸之聚醯胺酸片材D1,而獲得聚醯胺酸片材D。使所獲得之聚醯胺酸片材D於10Pa以下之真空環境下、於350℃×1.5hr之條件下醯亞胺化,而獲得作為高黏著層之聚醯亞胺片材D1與作為低黏著層之市售聚醯亞胺片材D2的積層體,即暫時固定材D。 According to the composition of Table 1, a polyphthalic acid sheet D1 having a thickness of 20 μm as a precursor of the high adhesion layer was obtained in the same procedure as in Example 1. A commercially available polyimine sheet (Kapton (registered trademark)) D2 was formed into a size of 120 mm × 120 mm, and adhered to a size of 200 mm × 200 mm in a manner to substantially coincide with each other at 90 ° C. The amino acid sheet D1 was obtained to obtain a poly-proline sheet D. The obtained polyamic acid sheet D is imidized under a vacuum atmosphere of 10 Pa or less at 350 ° C × 1.5 hr to obtain a polyimine sheet D1 as a high adhesive layer and as a low The laminated body of the commercially available polyimine sheet D2 of the adhesive layer, that is, the temporary fixing material D.

將所獲得之暫時固定材D於150℃下以市售聚醯亞胺片材D2之部分處於中央的方式貼合於長150mm×寬150mm×厚1mm之玻璃板,沿著玻璃板之外周部切下暫時固定材D,而獲得附帶玻璃板之暫時固定材D。 The obtained temporary fixing material D was bonded to a glass plate having a length of 150 mm × a width of 150 mm × a thickness of 1 mm at a temperature of 150 ° C at a central portion of the commercially available polyimide film D2, along the outer periphery of the glass plate. The temporary fixing material D was cut out, and the temporary fixing material D with the glass plate was obtained.

(比較例1) (Comparative Example 1)

依據表1之組成,以與實施例1相同之程序獲得厚度20μm之聚醯胺酸片材E1。使所獲得之聚醯胺酸片材E1於10Pa以下之真空環境下、於350℃×1.5hr之條件下醯亞胺化,而獲得由單層聚醯亞胺片材E1形成之暫時固定材E。 According to the composition of Table 1, a polyacrylic acid sheet E1 having a thickness of 20 μm was obtained by the same procedure as in Example 1. The obtained polyamic acid sheet E1 is imidized under a vacuum environment of 10 Pa or less under conditions of 350 ° C × 1.5 hr to obtain a temporary fixing material formed of a single-layer polyimine sheet E1. E.

將所獲得之暫時固定材E於90℃下貼合於長150mm×寬150mm×厚1mm之玻璃板,沿著玻璃板之外周部切下暫時固定材E,而獲得附 帶玻璃板之暫時固定材E。 The obtained temporary fixing material E was bonded to a glass plate having a length of 150 mm × a width of 150 mm × a thickness of 1 mm at 90 ° C, and the temporary fixing material E was cut out along the outer periphery of the glass plate to obtain an attached Temporary fixing material E with glass plate.

[高黏著層及低黏著層之黏著力之測定] [Determination of Adhesion of High Adhesive Layer and Low Adhesive Layer]

將僅由各實施例及比較例之聚醯胺酸片材A1~E1形成之層及僅由聚醯胺酸片材A2~B2形成之層分別貼合於玻璃板,使其等於氮氣環境下、於300℃下1.5小時之條件下醯亞胺化,而獲得作為高黏著層及低黏著層單體之附帶玻璃板之聚醯亞胺片材。再者,實施例3中,於玻璃板形成鋁蒸鍍膜C2而設為低黏著層,於實施例4,將Kapton(註冊商標)聚醯亞胺片材D2直接設為低黏著層,分別貼合於玻璃板。將附帶玻璃板之高黏著層A1~E1及附帶玻璃板之低黏著層A2~D2分別加工成20mm寬、100mm長,使用拉伸試驗機(島津製作所製造,Autograph AGS-H),以溫度23℃、300mm/min進行90°剝離力評價。將結果示於表2。 The layer formed only of the polyamic acid sheets A1 to E1 of the respective examples and comparative examples and the layer formed only of the polyamic acid sheets A2 to B2 were respectively bonded to a glass plate to be equal to a nitrogen atmosphere. The yttrium imidization was carried out at 300 ° C for 1.5 hours to obtain a polyimide sheet attached to a glass plate as a high adhesion layer and a low adhesion layer monomer. In the third embodiment, the aluminum vapor-deposited film C2 was formed on the glass plate to form a low-adhesion layer. In the fourth embodiment, the Kapton (registered trademark) polyimide sheet D2 was directly set as a low-adhesive layer, and each was attached. Combined with a glass plate. The high-adhesive layer A1~E1 with the glass plate and the low-adhesive layer A2~D2 with the glass plate were processed into 20 mm wide and 100 mm long, respectively, using a tensile tester (manufactured by Shimadzu Corporation, Autograph AGS-H) at a temperature of 23 The 90° peel force evaluation was performed at °C and 300 mm/min. The results are shown in Table 2.

[耐化學品性評價] [Chemical resistance evaluation]

將實施例及比較例之暫時固定材A~E之中心附近切下50mm見方而製成測定樣品,於控制為25℃、20%Rh之乾燥器內進行24小時乾燥後,對測定樣品之重量進行測定,記作重量1。其後,使測定樣品於100ml之10%氫氧化鈉(NaOH)水溶液中於室溫下浸漬5分鐘,利用 超純水充分清洗後,再次利用乾燥器乾燥24小時,測定重量2。將該重量1與重量2代入下述式1,算出重量減少率,並對耐鹼性進行評價。 The measurement samples were prepared by cutting 50 mm squares near the center of the temporary fixing materials A to E of the examples and the comparative examples, and drying the samples in a desiccator controlled at 25 ° C and 20% Rh for 24 hours. The measurement was carried out and recorded as weight 1. Thereafter, the measurement sample was immersed in 100 ml of a 10% aqueous sodium hydroxide (NaOH) solution at room temperature for 5 minutes, and utilized. After the ultrapure water was sufficiently washed, it was again dried by a drier for 24 hours, and the weight 2 was measured. This weight 1 and weight 2 were substituted into the following formula 1, and the weight reduction rate was calculated, and the alkali resistance was evaluated.

重量減少率(%)={(重量1-重量2)/重量1}×100 式1 Weight reduction rate (%) = {(weight 1 - weight 2) / weight 1} × 100

同樣地,使各樣品於100ml之10%硫酸水溶液(室溫)中浸漬5分鐘而評價耐酸性,使各樣品於100ml之3%氫氧化四甲基銨(室溫)中浸漬5分鐘而評價耐溶劑性。耐鹼性、耐酸性、耐溶劑性之評價均將重量減少率未達1%之情形評價為「○」,將重量減少率為1%以上之情形評價為「×」。將結果示於表2。 Similarly, each sample was immersed in 100 ml of a 10% sulfuric acid aqueous solution (room temperature) for 5 minutes to evaluate acid resistance, and each sample was immersed in 100 ml of 3% tetramethylammonium hydroxide (room temperature) for 5 minutes to evaluate. Solvent resistance. The evaluation of the alkali resistance, the acid resistance, and the solvent resistance was evaluated as "○" when the weight reduction rate was less than 1%, and "x" when the weight reduction rate was 1% or more. The results are shown in Table 2.

(利用示差熱-熱重量同步測定之重量減少率之測定) (Measurement of weight reduction rate by differential thermal-thermal weight simultaneous measurement)

將各樣品採取約10mg後,使用示差熱-熱重量同步測定計(RIGAKU公司製造,「TMA-8310」),於氮氣環境中(流量:100ml/min)以溫度範圍25~400℃以5℃/min之升溫速度對樣品進行加熱。根據此時之初始重量與200℃下之重量200基於下述式而測定200℃下之重量減少率(%)。 After taking about 10 mg of each sample, a differential heat-thermal weight synchronous meter ("TMA-8310", manufactured by RIGAKU Co., Ltd.) was used in a nitrogen atmosphere (flow rate: 100 ml/min) at a temperature range of 25 to 400 ° C at 5 ° C. The sample is heated at a heating rate of /min. In this case the initial weight of the weight at 200 ℃ 200 measured weight reduction rate (%) at the 200 ℃ based on the following formula according to.

重量減少率(%)={(初始重量-重量200)/初始重量}×100 Weight reduction rate (%) = {(initial weight - weight 200 ) / initial weight} × 100

[耐處理性評價] [Resistance evaluation]

將100mm×60mm之強化玻璃(Corning公司製造,「Gorilla Glass」)於120℃、4.5kN、3000Pa、60秒之條件下貼合於附帶玻璃板之暫時固定材A~E。其後,實施於300℃、5Pa之環境中暴露3小時之真空高溫處理,將未見強化玻璃之剝離或暫時固定材自玻璃板之剝離的情形評價為「○」,將可見之情形評價為「×」。將結果示於表2。 A tempered glass of 100 mm × 60 mm ("Gorilla Glass" manufactured by Corning Co., Ltd.) was bonded to temporary fixing materials A to E with glass plates at 120 ° C, 4.5 kN, 3000 Pa, and 60 seconds. Then, it was subjected to vacuum high temperature treatment for 3 hours in an environment of 300 ° C and 5 Pa, and the peeling of the tempered glass or the peeling of the temporary fixing material from the glass plate was evaluated as "○", and the visible case was evaluated as "X". The results are shown in Table 2.

[對玻璃板剝離性之評價] [Evaluation of the peelability of glass sheets]

以耐處理性評價之程序,於距離貼合有強化玻璃之附帶玻璃板之暫時固定材A~E之玻璃板外周部20mm內側,自暫時固定材之正上方切入切口直至到達玻璃板,形成可見玻璃板之狀態。切入切口後, 使用真空鑷子將強化玻璃向上方吸附。將可藉由吸附而將強化玻璃與暫時固定材自玻璃板剝離之情形評價為「○」,將無法剝離之情形評價為「×」。將結果示於表2。 In the process of evaluation of the resistance to the treatment, the inside of the outer peripheral portion of the glass plate of the temporary fixing material A to E of the glass plate to which the tempered glass is attached is placed, and the slit is cut from the directly above the temporary fixing material until it reaches the glass plate, and the visible is formed. The state of the glass plate. After cutting into the incision, The tempered glass is adsorbed upward using vacuum tweezers. The case where the tempered glass and the temporary fixing material were peeled off from the glass plate by adsorption was evaluated as "○", and the case where peeling could not be peeled off was evaluated as "x". The results are shown in Table 2.

[對強化玻璃剝離性之評價] [Evaluation of tempered glass peelability]

以耐處理性評價之程序,實施強化玻璃與暫時固定材A~E之貼合及真空高溫處理後,將黏著帶(No.315B,日東電工公司製造)貼合於暫時固定材表面後,使用拉伸試驗機(島津製作所製造,Autograph AGS-H),於溫度23℃、300mm/min下使用5N之荷重元以90°剝離力將暫時固定材與強化玻璃剝離,將可將暫時固定材自強化玻璃剝離之情形評價為「○」,將於設定溫度設為100℃下可剝離之情形評價為「△」,將無法剝離之情形評價為「×」。將結果示於表2。 After the bonding of the tempered glass to the temporary fixing material A to E and the vacuum high temperature treatment, the adhesive tape (No. 315B, manufactured by Nitto Denko Corporation) is attached to the surface of the temporary fixing material, and then used. Tensile testing machine (Autograph AGS-H, manufactured by Shimadzu Corporation), using a load of 5N at a temperature of 23 ° C and 300 mm/min to peel off the temporary fixing material and the tempered glass at a peeling force of 90°, which will temporarily fix the material. The case where the tempered glass was peeled off was evaluated as "○", and the case where peeling was performed at a set temperature of 100 ° C was evaluated as "Δ", and the case where peeling could not be performed was evaluated as "x". The results are shown in Table 2.

根據表1可知,實施例之暫時固定材結果為強化玻璃加工時之保持性與加工後之剝離性、耐化學品性、耐熱性(釋氣之抑制)均良好。比較例之暫時固定材雖耐化學品性良好,但無法保持強化玻璃,而無法進行強化玻璃之加工。 As can be seen from Table 1, the results of the temporary fixing materials of the examples were good in the retention properties during tempered glass processing, peelability after processing, chemical resistance, and heat resistance (suppression of outgassing). Although the temporary fixing material of the comparative example has good chemical resistance, the tempered glass cannot be held, and the tempered glass cannot be processed.

11‧‧‧暫時固定材 11‧‧‧ Temporary fixtures

11a‧‧‧高黏著層 11a‧‧‧High adhesion layer

11b‧‧‧低黏著層 11b‧‧‧Low adhesive layer

11C‧‧‧暫時固定材之中央部 11C‧‧‧The central part of temporary fixtures

11P‧‧‧暫時固定材之周緣部 11P‧‧‧ Peripheral parts of temporary fixtures

Claims (5)

一種透明電路基板之製造方法,其包括:積層體準備步驟,其係準備將透明工件經由暫時固定材而暫時固定於支持體上而成的積層體,加工步驟,其係藉由包括200℃以上之加熱處理的圖案加工而於上述透明工件形成圖案而製作透明電路基板,及剝離步驟,其係將上述透明電路基板自上述暫時固定材剝離;且針對上述暫時固定材以升溫速度5℃/min升溫至400℃而進行示差熱-熱重量同步測定時,上述暫時固定材於200℃下之重量減少率未達1%。 A method for manufacturing a transparent circuit substrate, comprising: a laminate preparation step of preparing a laminate in which a transparent workpiece is temporarily fixed to a support via a temporary fixing member, and the processing step is performed by including 200 ° C or higher Forming a heat-treated pattern to form a transparent circuit substrate on the transparent workpiece, and a peeling step of peeling the transparent circuit substrate from the temporary fixing material; and heating the substrate at a temperature increase rate of 5 ° C/min When the temperature was raised to 400 ° C and the differential thermal-thermal weight synchronization measurement was performed, the weight reduction rate of the temporary fixing material at 200 ° C was less than 1%. 如請求項1之透明電路基板之製造方法,其中上述暫時固定材具備:高黏著層,其對玻璃板具有0.05N/20mm以上且10N/20mm以下之黏著力,與低黏著層,其對玻璃板具有0N/20mm以上且未達0.05N/20mm之黏著力。 The method of manufacturing a transparent circuit substrate according to claim 1, wherein the temporary fixing material comprises: a high-adhesion layer having an adhesion force of 0.05 N/20 mm or more and 10 N/20 mm or less to the glass plate, and a low adhesion layer to the glass The board has an adhesion of 0 N/20 mm or more and less than 0.05 N/20 mm. 如請求項2之透明電路基板之製造方法,其中於上述圖案形成後之上述積層體之俯視中,上述透明工件上之圖案加工區域之外周位於較上述低黏著層之外周更內側。 The method of manufacturing a transparent circuit substrate according to claim 2, wherein in the plan view of the laminated body after the pattern formation, the outer periphery of the pattern processing region on the transparent workpiece is located further inside than the outer periphery of the low adhesive layer. 如請求項2之透明電路基板之製造方法,其中於上述積層體中,上述低黏著層配置於上述透明工件與上述支持體之間,上述高黏著層以將上述透明工件之外周側面與上述支持體之外周側面連結之方式配置。 The method of manufacturing a transparent circuit substrate according to claim 2, wherein in the laminated body, the low adhesion layer is disposed between the transparent workpiece and the support, and the high adhesion layer is configured to support the outer peripheral side of the transparent workpiece and the support The outer side of the body is connected to the side. 如請求項4之透明電路基板之製造方法,其中於上述積層體之側 視中,上述高黏著層之高度為上述積層體之高度之50%以上且未達100%。 A method of manufacturing a transparent circuit substrate according to claim 4, wherein the side of the laminate is In view of the above, the height of the high adhesion layer is 50% or more of the height of the laminate and is less than 100%.
TW103115999A 2013-05-08 2014-05-05 Transparent-circuit-board manufacturing method TW201509242A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013098091A JP2014218394A (en) 2013-05-08 2013-05-08 Manufacturing method of transparent circuit board

Publications (1)

Publication Number Publication Date
TW201509242A true TW201509242A (en) 2015-03-01

Family

ID=51867140

Family Applications (1)

Application Number Title Priority Date Filing Date
TW103115999A TW201509242A (en) 2013-05-08 2014-05-05 Transparent-circuit-board manufacturing method

Country Status (3)

Country Link
JP (1) JP2014218394A (en)
TW (1) TW201509242A (en)
WO (1) WO2014181658A1 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI601104B (en) * 2015-04-02 2017-10-01 元太科技工業股份有限公司 Display panel
JP7164841B2 (en) * 2017-01-12 2022-11-02 ナニワ化工株式会社 Sheet substrate for temporary fixing of electronic parts
KR102608548B1 (en) * 2017-09-27 2023-12-04 닛산 가가쿠 가부시키가이샤 Composition for forming a temporary adhesive layer and temporary adhesive layer

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007251080A (en) * 2006-03-20 2007-09-27 Fujifilm Corp Fixing method for plastic substrate, circuit substrate, and manufacturing method therefor
JP2010161167A (en) * 2009-01-07 2010-07-22 Three M Innovative Properties Co Adhesive tape and method of manufacturing laminate including the same
JP5255525B2 (en) * 2009-06-15 2013-08-07 古河電気工業株式会社 Adhesive tape for semiconductor wafer processing and manufacturing method thereof
JP2012033737A (en) * 2010-07-30 2012-02-16 Shin Etsu Polymer Co Ltd Method for handling semiconductor wafer
JP5548109B2 (en) * 2010-11-30 2014-07-16 リンテック株式会社 Method for producing substrate film for pressure-sensitive adhesive sheet, substrate film for pressure-sensitive adhesive sheet, and pressure-sensitive adhesive sheet

Also Published As

Publication number Publication date
JP2014218394A (en) 2014-11-20
WO2014181658A1 (en) 2014-11-13

Similar Documents

Publication Publication Date Title
US8609229B2 (en) Glass/resin laminate, and electronic device using same
TWI709481B (en) Silane coupling agent laminated layer polymer film and its manufacturing method, laminated body and its manufacturing method, and flexible electronic device manufacturing method
TWI524991B (en) A laminated body, a method for producing a laminated body, and a method for manufacturing the flexible electronic device
JP5531781B2 (en) LAMINATE, ELECTRIC CIRCUIT-ADDED LAMINATE, SEMICONDUCTOR-ADDED LAMINATE, AND METHOD FOR PRODUCING THE SAME
TWI574843B (en) Laminate and method for manufacturing the same, and method for manufacturing device structure using the same
JP6601693B2 (en) Laminated body with metal wiring layer formed and method for manufacturing the same
JP5742725B2 (en) Polyimide film, production method thereof, and laminate production method
CN106486497B (en) Polyimide-based plate film with functional layer, method for producing same, and long polyimide laminate
TW201518108A (en) Rigid composite laminate plate, method for manufacturing same, laminate, and method for manufacturing device using laminate
JP6638415B2 (en) Method for manufacturing flexible electronic device
KR102476038B1 (en) Manufacturing method of polymer film laminated substrate and flexible electronic device
TW201509243A (en) Transparent-circuit-board manufacturing method
US20140249269A1 (en) Thermally-detachable sheet
TW201509242A (en) Transparent-circuit-board manufacturing method
TWI786055B (en) Polyimide precursor and polyimide generated from said polyimide precursor
JP2013153122A (en) Method for manufacturing semiconductor device
CN112512792B (en) Laminate and method for producing laminate
WO2013058054A1 (en) Thermally-detachable sheet
US20140004683A1 (en) Method of manufacturing semiconductor element
TW201417162A (en) Method for manufacturing semiconductor device and bonding sheet
JP2014072440A (en) Semiconductor device manufacturing method and adhesive sheet
TW201324685A (en) Thermally-detachable sheet
US20230173800A1 (en) Multilayer body comprising highly heat-resistant transparent film
CN115551714A (en) Laminate comprising transparent highly heat-resistant film
JP2014072438A (en) Semiconductor device manufacturing method and adhesive sheet