TWI524991B - A laminated body, a method for producing a laminated body, and a method for manufacturing the flexible electronic device - Google Patents

A laminated body, a method for producing a laminated body, and a method for manufacturing the flexible electronic device Download PDF

Info

Publication number
TWI524991B
TWI524991B TW103103257A TW103103257A TWI524991B TW I524991 B TWI524991 B TW I524991B TW 103103257 A TW103103257 A TW 103103257A TW 103103257 A TW103103257 A TW 103103257A TW I524991 B TWI524991 B TW I524991B
Authority
TW
Taiwan
Prior art keywords
polymer film
film
inorganic substrate
coupling agent
laminate
Prior art date
Application number
TW103103257A
Other languages
Chinese (zh)
Other versions
TW201434629A (en
Inventor
Tetsuo Okuyama
Toshiyuki Tsuchiya
Katsuki Nakase
Satoshi Maeda
Original Assignee
Toyo Boseki
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toyo Boseki filed Critical Toyo Boseki
Publication of TW201434629A publication Critical patent/TW201434629A/en
Application granted granted Critical
Publication of TWI524991B publication Critical patent/TWI524991B/en

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J5/00Adhesive processes in general; Adhesive processes not provided for elsewhere, e.g. relating to primers
    • C09J5/06Adhesive processes in general; Adhesive processes not provided for elsewhere, e.g. relating to primers involving heating of the applied adhesive
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B17/00Layered products essentially comprising sheet glass, or glass, slag, or like fibres
    • B32B17/06Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material
    • B32B17/10Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/12Mountings, e.g. non-detachable insulating substrates
    • H01L23/14Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
    • H01L23/145Organic substrates, e.g. plastic
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/46Manufacturing multilayer circuits
    • H05K3/4611Manufacturing multilayer circuits by laminating two or more circuit boards
    • H05K3/4626Manufacturing multilayer circuits by laminating two or more circuit boards characterised by the insulating layers or materials
    • H05K3/4635Manufacturing multilayer circuits by laminating two or more circuit boards characterised by the insulating layers or materials laminating flexible circuit boards using additional insulating adhesive materials between the boards
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00Additional features of adhesives in the form of films or foils
    • C09J2301/40Additional features of adhesives in the form of films or foils characterized by the presence of essential components
    • C09J2301/416Additional features of adhesives in the form of films or foils characterized by the presence of essential components use of irradiation
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2400/00Presence of inorganic and organic materials
    • C09J2400/10Presence of inorganic materials
    • C09J2400/12Ceramic
    • C09J2400/123Ceramic in the substrate
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2400/00Presence of inorganic and organic materials
    • C09J2400/10Presence of inorganic materials
    • C09J2400/14Glass
    • C09J2400/143Glass in the substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/38Improvement of the adhesion between the insulating substrate and the metal
    • H05K3/389Improvement of the adhesion between the insulating substrate and the metal by the use of a coupling agent, e.g. silane

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Laminated Bodies (AREA)
  • Adhesives Or Adhesive Processes (AREA)

Description

疊層體、疊層體之製造方法、及可撓性電子元件之製造方法 Laminate, method of manufacturing laminate, and method of manufacturing flexible electronic component

本發明係關於在剛性的暫時支撐用無機基板上暫時固定可撓性的高分子薄膜而作成疊層體,其次在高分子薄膜上形成各種電子元件後,將高分子薄膜連同電子元件部剝離,得到可撓性電子元件之製造技術及該疊層體。 In the present invention, a flexible polymer film is temporarily fixed on a rigid temporary support inorganic substrate to form a laminate, and then a plurality of electronic components are formed on the polymer film, and then the polymer film is separated from the electronic component portion. A manufacturing technique of the flexible electronic component and the laminate are obtained.

作為資訊通訊器材(播放設備、行動無線、行動通訊設備等)、雷達、高速資訊處理裝置等之電子零件,使用半導體元件、MEMS元件、顯示器元件等功能元件(元件),此等以往一般係形成或搭載於玻璃、矽晶圓、陶瓷基材等無機基板上。然而,近年來要求電子零件的輕量化、小型‧薄型化、可撓化,已有人嘗試在高分子薄膜上形成各種功能元件。 As electronic components such as information communication equipment (playing equipment, mobile radio, mobile communication equipment, etc.), radar, and high-speed information processing equipment, functional components (components) such as semiconductor components, MEMS components, and display components are used. Or mounted on an inorganic substrate such as glass, germanium wafer or ceramic substrate. However, in recent years, it has been required to reduce the weight, size, thickness, and flexibility of electronic components, and attempts have been made to form various functional elements on polymer films.

在高分子薄膜表面形成各種功能元件,係以利用高分子薄膜特性之可撓性的所謂捲繞式製程(roll to roll process)加工為理想。然而,在半導體產業、MEMS產業、顯示器產業等業界中,至今係以將晶圓基底或玻璃基板基底等剛性的平面基板作為對象之製程技術為主流。因此,為了利用既有的基本架構以在高分子薄膜表面形成各種功能元件,設計了將高分子薄膜貼合於由無機物(玻璃板、陶瓷板、矽晶圓、金屬板等)所構成之剛性的支撐體,在形成所欲的元件後自支撐體剝離之製程。 It is preferable to form various functional elements on the surface of the polymer film by a so-called roll-to-roll process using flexibility of polymer film characteristics. However, in the semiconductor industry, the MEMS industry, the display industry, and the like, a process technology that targets a rigid planar substrate such as a wafer substrate or a glass substrate substrate has been mainstream. Therefore, in order to form various functional elements on the surface of the polymer film by using the existing basic structure, it is designed to bond the polymer film to a rigidity composed of inorganic materials (glass plate, ceramic plate, tantalum wafer, metal plate, etc.). The support is a process of stripping from the support after forming the desired component.

一般在形成功能元件之步驟中,大多採用較高的溫度。例如,形成多晶矽或氧化物半導體等功能元件係採用200~500℃左右的溫度範圍。為了去氫化,製作低溫多晶矽薄膜電晶體有需要450℃左右的加熱之情形。製作 氫化非晶矽薄膜亦需要200~300℃左右的溫度範圍。在此所例示之溫度範圍,雖然對於無機材料而言並非太高的溫度,然而對於高分子薄膜、或一般高分子薄膜之貼合所利用之接著劑而言可說是相當高的溫度。在將先前所述之高分子薄膜貼合於無機基板,並且於形成功能元件後進行剝離之手法中,其為所用之高分子薄膜或貼合所用之接著劑、黏著劑亦要求充分耐熱性之原因,然而以現實問題而言,目前在該高溫區域可供實用的高分子薄膜有限,又,以往的貼合用接著劑、黏著劑則無具有充分的耐熱性者。 Generally, in the step of forming a functional element, a relatively high temperature is often employed. For example, a functional element such as a polycrystalline germanium or an oxide semiconductor is formed in a temperature range of about 200 to 500 °C. In order to dehydrogenate, it is necessary to heat a low temperature polycrystalline germanium film transistor at about 450 °C. Production The hydrogenated amorphous germanium film also requires a temperature range of about 200 to 300 °C. The temperature range exemplified herein is not too high a temperature for the inorganic material, but it is a relatively high temperature for the adhesive used for bonding the polymer film or the general polymer film. In the method of bonding a polymer film as described above to an inorganic substrate and performing peeling after forming a functional element, it is required to use a polymer film or an adhesive or adhesive for bonding, which is required to have sufficient heat resistance. The reason is that, in practical terms, the polymer film which is currently available in the high temperature region is limited, and the conventional bonding adhesive and the adhesive do not have sufficient heat resistance.

由於無法得到在無機基板暫時貼附高分子薄膜之耐熱接著方法,在該用途中,已知在無機基板上塗佈高分子薄膜之溶液或前驅物溶液,並且使其在無機基板上乾燥‧硬化而進行薄膜化以使用於該用途之技術。然而,藉由該方法所得之高分子膜脆弱而易裂,因此多有在從無機基板剝離時破壞功能元件之情形。尤其剝離大面積之元件的難度極高,幾乎不可能得到滿足工業需求的產率。 Since a heat-resistant adhesive method for temporarily attaching a polymer film to an inorganic substrate cannot be obtained, in this application, it is known to apply a solution of a polymer film or a precursor solution on an inorganic substrate, and dry it on an inorganic substrate. Thinning is carried out to use the technology for this purpose. However, since the polymer film obtained by this method is fragile and easily cracked, there are many cases where the functional element is broken when peeled off from the inorganic substrate. In particular, it is extremely difficult to peel off a large-area component, and it is almost impossible to obtain a yield that satisfies industrial demand.

本發明者等鑑於如此事態,提案一種將耐熱性優異、強韌且可薄膜化之聚醯亞胺薄膜,隔著偶合劑貼合於由無機物所構成之支撐體(無機層)而成的疊層體,作為用於形成功能元件之高分子薄膜與支撐體的疊層體(專利文獻1~3)。 In view of such a situation, the inventors of the present invention proposed a laminate of a polyimide film which is excellent in heat resistance, strong and thin, and which is bonded to a support (inorganic layer) made of an inorganic material via a coupling agent. The layer body is a laminate of a polymer film and a support for forming a functional element (Patent Documents 1 to 3).

[先前技術文獻] [Previous Technical Literature] [專利文獻] [Patent Literature]

[專利文獻1]日本特開2010-283262號公報 [Patent Document 1] Japanese Patent Laid-Open Publication No. 2010-283262

[專利文獻2]日本特開2011-011455號公報 [Patent Document 2] Japanese Patent Laid-Open Publication No. 2011-011455

[專利文獻3]日本特開2011-245675號公報 [Patent Document 3] Japanese Patent Laid-Open Publication No. 2011-245675

根據上述專利文獻1~3所記載之疊層體,可不使用所謂接著劑、黏著劑之類的要素而貼合高分子薄膜與無機基板,並且即使將該疊層體暴露於 製作薄膜元件所必要的高溫,亦不會發生高分子薄膜之剝離。因此藉由將該疊層體供予以往的在玻璃板或矽晶圓等無機物的基板上直接形成電子元件之製程,可以在高分子薄膜上製作電子元件,並且可藉由將高分子薄膜從無機基板剝離來實現可撓性的電子元件。 According to the laminates described in the above Patent Documents 1 to 3, the polymer film and the inorganic substrate can be bonded without using an element such as an adhesive or an adhesive, and the laminate can be exposed to the laminate. The high temperature necessary for the production of the thin film element does not cause peeling of the polymer film. Therefore, by manufacturing the laminate directly on the substrate on which an inorganic material such as a glass plate or a germanium wafer is formed, an electronic component can be fabricated on the polymer film, and the polymer film can be removed from the polymer film. The inorganic substrate is peeled off to realize a flexible electronic component.

然而,該技術尚餘如下所示之工業生產上的課題。 However, this technology still has the problems in industrial production as shown below.

尤其當進行高精細電子元件之製作時,產率成為課題。當高分子薄膜與無機基板間混入異物時,在異物上及其周邊,會產生將異物比擬為支柱的帳篷狀結構。這會在高分子薄膜與無機基板之間產生空隙,產生部分未接著處。被關在該空隙之氣體,由於在加熱環境下或減壓環境下會膨脹,因此成為膨脹缺陷(亦稱為起泡)之原因。又,由於空隙部分未接著,當巨觀上掌握接著強度時,接著強度之變動變大。 Especially when producing high-definition electronic components, productivity is a problem. When a foreign matter is mixed between the polymer film and the inorganic substrate, a tent-like structure in which the foreign matter is compared as a pillar is generated on and around the foreign matter. This creates a void between the polymer film and the inorganic substrate, resulting in a portion that is not followed. The gas that is trapped in the gap is a cause of expansion defects (also referred to as foaming) due to swelling in a heated environment or a reduced pressure environment. Further, since the gap portion is not followed, when the strength is grasped on the giant view, the fluctuation of the strength becomes large.

存在異物的附近,高分子薄膜本身成為隆起之狀態,尤其當實施光蝕刻法之圖案形成、或如微接觸印刷(microcontact printing)之高精細圖案時,會成為阻礙要素,而發生無法進行良好的電子元件形成之情形。 In the vicinity of the foreign matter, the polymer film itself is in a state of bulging, and in particular, when patterning by photolithography or high-definition pattern such as microcontact printing is performed, it becomes a hindrance element, and it is impossible to perform good. The situation in which electronic components are formed.

該異物可藉由無機基板表面與高分子薄膜表面之清淨化、以及作業環境之純淨化而減少。然而,以該技術之本質上的問題點而言,有時起因於矽烷偶合劑本身而產生異物。在所例示之先前技術中,記載有在無機基板以液狀直接塗佈矽烷偶合劑之溶劑溶液的例子。本案發明者等發現矽烷偶合劑會受到操作環境所存在的水分等之影響,容易生成凝集體,在所例示之直接塗佈方法中,亦會在無機基板塗佈於溶液中等非故意生成之矽烷偶合劑的凝集體,結果成為該凝集體作為異物、與矽烷偶合劑一同散布於無機基板上之狀態。該異物所致之負面影響如先前所述。 The foreign matter can be reduced by the purification of the surface of the inorganic substrate and the surface of the polymer film, and the purification of the working environment. However, in the nature of the technical problem, foreign matter is sometimes caused by the decane coupling agent itself. In the prior art exemplified, an example in which a solvent solution of a decane coupling agent is directly applied to an inorganic substrate in a liquid state is described. The inventors of the present invention found that the decane coupling agent is affected by moisture or the like existing in the operating environment, and it is easy to form an aggregate. In the direct coating method exemplified, the non-intentionally formed decane is also applied to the inorganic substrate. As a result, the aggregate of the coupling agent is in a state in which the aggregate is dispersed as a foreign matter on the inorganic substrate together with the decane coupling agent. The negative effects caused by this foreign matter are as previously described.

本發明係著眼於如上所述之情形所完成者,其係藉由根本性地改變矽烷偶合劑之塗佈方法,而防止矽烷偶合劑的凝集體附著於無機基板,並供給外觀品質優異、高分子薄膜/無機基板間之接著力經均質化之疊層體,解決工業生產上之課題者。 The present invention has been made in view of the above-described circumstances, by fundamentally changing the coating method of the decane coupling agent, thereby preventing the aggregate of the decane coupling agent from adhering to the inorganic substrate, and providing the appearance quality excellent and high. A laminate in which the adhesion between the molecular film and the inorganic substrate is homogenized to solve problems in industrial production.

再者,根據本發明,高分子薄膜剝離後之無機基板表面的粗糙度小, 可在簡單的洗淨操作後再塗佈矽烷偶合劑而作為基板活用,顯著地提升無機基板的再生性。 Furthermore, according to the present invention, the surface roughness of the inorganic substrate after the polymer film is peeled off is small, The decane coupling agent can be applied as a substrate after a simple cleaning operation, and the reproducibility of the inorganic substrate can be remarkably improved.

本發明者等為了解決前述課題而專心檢討,結果發現藉由以氣相進行對無機基板之矽烷偶合劑塗佈,可提供高分子薄膜與無機基板之間未插入異物之良好的疊層體,以結果而言可製作產率良好之高精細可撓性電子元件,並且改善無機基板之再生性,而完成本發明。 In order to solve the above problems, the inventors of the present invention have intensively reviewed and found that by applying a decane coupling agent to an inorganic substrate in a vapor phase, it is possible to provide a good laminate in which a foreign material is not inserted between the polymer film and the inorganic substrate. As a result, a high-fine-flexible electronic component having a good yield can be produced, and the reproducibility of the inorganic substrate can be improved, and the present invention has been completed.

換言之,本發明包含以下構成。 In other words, the present invention includes the following constitution.

1.一種疊層體,其係高分子薄膜與無機基板隔著矽烷偶合劑層接合之疊層體,其中存在於該高分子薄膜與該無機基板之間的長徑10μm以上之異物個數為3個/cm2以下,且該高分子薄膜與該無機基板之接著強度為高分子薄膜之破裂強度的1/2以下。 A laminate comprising a laminate of a polymer film and an inorganic substrate via a decane coupling agent layer, wherein the number of foreign matter having a major axis of 10 μm or more between the polymer film and the inorganic substrate is 3 pieces/cm 2 or less, and the adhesive strength of the polymer film and the inorganic substrate is 1/2 or less of the breaking strength of the polymer film.

2.如1.所記載之疊層體,其中前述異物為包含矽原子之異物。 2. The laminate according to 1. wherein the foreign matter is a foreign matter containing a ruthenium atom.

3.如1.或2.所記載之疊層體,其中前述高分子薄膜為厚度3μm以上之聚醯亞胺薄膜。 3. The laminate according to 1. or 2. wherein the polymer film is a polyimide film having a thickness of 3 μm or more.

4.如1.至3.中任一項所記載之疊層體,其中前述無機基板為面積1000cm2以上之玻璃板。 4. The laminate according to any one of the above aspects, wherein the inorganic substrate is a glass plate having an area of 1000 cm 2 or more.

5.如1.至4.中任一項所記載之疊層體,其中前述矽烷偶合劑為每一分子具有1個矽原子之化學結構。 5. The laminate according to any one of 1 to 4, wherein the decane coupling agent is a chemical structure having one fluorene atom per molecule.

6.如1.至5.中任一項所記載之疊層體,其係高分子薄膜與無機基板隔著矽烷偶合劑層接合之疊層體,其中具有該高分子薄膜與該無機基板之間的接著強度相異的良好接著部分與易剝離部分,且該良好接著部分與該易剝離部分形成規定的圖案。 The laminate according to any one of the aspects of the present invention, wherein the polymer film and the inorganic substrate are bonded to each other via a layer of a decane coupling agent, wherein the polymer film and the inorganic substrate are provided. The good subsequent portions of the subsequent strengths are different from the easily peelable portions, and the good subsequent portions form a prescribed pattern with the easily peelable portions.

7.一種疊層體之製造方法,其特徵為具有下述(1)~(3)之步驟:(1)藉由使無機基板暴露於汽化之矽烷偶合劑,在無機基板上形成矽烷偶合劑層之步驟;(2)在該矽烷偶合劑層重疊表面經活性化處理之高分子薄膜之步驟; (3)藉由加熱加壓而接著兩者之步驟。 A method for producing a laminate, comprising the steps of (1) to (3): (1) forming a decane coupling agent on an inorganic substrate by exposing the inorganic substrate to a vaporized decane coupling agent. a step of layering; (2) a step of activating the polymer film on the overlapping surface of the decane coupling agent layer; (3) A step of heating both by heating and pressurization.

8.一種疊層體之製造方法,其特徵為具有下述(1)~(3)之步驟:(1)藉由使無機基板暴露於汽化之矽烷偶合劑,在無機基板上形成矽烷偶合劑層之步驟;(2)在該矽烷偶合劑層上塗佈高分子之溶液或高分子前驅物溶液之步驟;(3)乾燥‧加熱該高分子溶液或該高分子前驅物溶液以作成高分子薄膜而得到疊層體之步驟。 A method of producing a laminate, comprising the steps of (1) to (3): (1) forming a decane coupling agent on an inorganic substrate by exposing the inorganic substrate to a vaporized decane coupling agent. a step of layering; (2) a step of coating a polymer solution or a polymer precursor solution on the layer of the decane coupling agent; (3) drying ‧ heating the polymer solution or the polymer precursor solution to form a polymer The step of obtaining a laminate by a film.

9.如7.或8.所記載之疊層體之製造方法,其中前述(1)之步驟係在約略大氣壓下進行。 9. The method for producing a laminate according to the above, wherein the step (1) is carried out at about atmospheric pressure.

10.如7.或8.所記載之疊層體之製造方法,其中前述(1)之步驟係在減壓下進行。 10. The method for producing a laminate according to the above, wherein the step (1) is carried out under reduced pressure.

11.如7.至10.中任一項所記載之疊層體之製造方法,其中前述疊層體具有前述高分子薄膜與前述無機基板之間的接著強度相異的良好接著部分與易剝離部分,且該良好接著部分與該易剝離部分形成規定的圖案。 The method for producing a laminate according to any one of the above aspects, wherein the laminate has a good adhesion portion and an easy peeling strength between the polymer film and the inorganic substrate. And the good subsequent portion forms a prescribed pattern with the easily peelable portion.

12.如11.所記載之疊層體之製造方法,其中藉由在形成前述矽烷偶合劑層時,遮蔽前述無機基板的一部分,前述良好接著部分與前述易剝離部分形成規定的圖案。 12. The method for producing a laminate according to 11, wherein, when the decane coupling agent layer is formed, a part of the inorganic substrate is shielded, and the good adhesion portion and the easily peelable portion form a predetermined pattern.

13.如11.所記載之疊層體之製造方法,其中藉由在形成前述矽烷偶合劑層後,在矽烷偶合劑層的一部分照射活性能量射線,前述良好接著部分與前述易剝離部分形成規定的圖案。 13. The method for producing a laminate according to claim 11, wherein after the formation of the decane coupling agent layer, a part of the decane coupling agent layer is irradiated with an active energy ray, and the good adhesion portion and the easily peelable portion are formed into a predetermined specification. picture of.

14.一種可撓性電子元件之製造方法,其特徵為使用以如7.至10.中任一項所記載之製造方法所得之疊層體,在該疊層體之高分子薄膜上形成電子元件,其次,將該高分子薄膜連同該電子元件從無機基板剝離。 A method for producing a flexible electronic component, characterized in that a laminate obtained by the production method according to any one of the items 7 to 10. is used to form an electron on the polymer film of the laminate. Element, and second, the polymer film is peeled off from the inorganic substrate together with the electronic component.

15.一種可撓性電子元件之製造方法,其特徵為使用以如11.至13.中任一項所記載之製造方法所得之疊層體,在該疊層體之高分子薄膜中相當於前述易剝離部分的部分之上形成電子元件,其次,沿著該疊層體之該易剝離部分的外圍,在該高分子薄膜作出切 口,將該高分子薄膜連同電子元件從無機基板剝離。 A method for producing a flexible electronic component, which is characterized in that the laminate obtained by the production method according to any one of the items 11. to 13 is used in a polymer film of the laminate. Forming an electronic component on a portion of the easy-peelable portion, and second, cutting the polymer film along a periphery of the easily peelable portion of the laminate The polymer film is peeled off from the inorganic substrate together with the electronic component.

根據本發明,可得到在高分子薄膜與無機基板之間未插入異物之良好的疊層體,以結果而言均質化了高分子薄膜與無機基板之接著強度。 According to the present invention, a good laminate in which foreign matter is not inserted between the polymer film and the inorganic substrate can be obtained, and as a result, the bonding strength between the polymer film and the inorganic substrate is homogenized.

再者,根據本發明,對於矽烷偶合劑層,可在形成該矽烷偶合劑時以規定的圖案遮蔽無機基板的一部分,或者在形成矽烷偶合劑層後,對於矽烷偶合劑層的一部分沿著規定的圖案照射活性能量射線照射,有意地得到接著力的有/無、或強/弱,而可在形成電子元件時,利用所欲的圖案區分作成具有在元件形成製程時不發生高分子薄膜的剝離的程度的充分接著力的良好接著部分、以及可較容易地剝離高分子薄膜之易剝離部分,沿著該易剝離部分周邊作出切口,能剝離該區域所形成之功能元件部分。 Further, according to the present invention, a portion of the inorganic substrate may be masked in a predetermined pattern with respect to the decane coupling agent layer, or a part of the decane coupling agent layer may be formed after the formation of the decane coupling agent layer. The pattern is irradiated with active energy ray irradiation to intentionally obtain the presence/absence of the adhesion force, or strong/weak, and can be formed by using the desired pattern when the electronic component is formed, so that the polymer film does not occur during the component formation process. A good adhesion portion of the sufficient adhesion of the degree of peeling, and an easily peelable portion which can peel the polymer film relatively easily, and a slit is formed along the periphery of the easily peelable portion, and the functional element portion formed in the region can be peeled off.

此外,本發明之高分子薄膜剝離後的無機基板表面具有高度的平滑性,亦具有可藉由較簡單的洗淨操作,再度形成矽烷偶合層,而作為疊層體之材料使用之效果。 Further, the surface of the inorganic substrate after the peeling of the polymer film of the present invention has a high degree of smoothness, and has an effect of being able to form a decane coupling layer by a relatively simple washing operation and using it as a material of the laminate.

更佳為在本發明中,若使用具有高耐熱性之高分子薄膜,則可不使用耐熱性差的接著劑或黏著劑而貼合,在形成功能元件時使用180℃以上、較佳為230℃以上、進一步更佳為260℃以上的高溫來形成元件。一般而言,由於半導體、介電體等係在高溫形成時較能得到薄膜品質良好的薄膜,因此可期待形成更高性能的功能元件。根據本發明,可有利於製造在薄膜基材上形成介電體元件、半導體元件、MEMS元件、顯示器元件、發光元件、光電轉換元件、壓電轉換元件、熱電轉換元件等元件之可撓性電子元件。 More preferably, in the present invention, when a polymer film having high heat resistance is used, it can be bonded without using an adhesive or an adhesive having poor heat resistance, and when the functional element is formed, 180 ° C or higher, preferably 230 ° C or higher is used. Further, it is more preferably a high temperature of 260 ° C or higher to form an element. In general, since a semiconductor, a dielectric, or the like is capable of obtaining a film having a good film quality at a high temperature, it is expected to form a functional element having higher performance. According to the present invention, it is advantageous to manufacture a flexible electronic device that forms a dielectric element, a semiconductor element, a MEMS element, a display element, a light-emitting element, a photoelectric conversion element, a piezoelectric conversion element, a thermoelectric conversion element, and the like on a film substrate. element.

(疊層體及製造方法) (Laminate and manufacturing method)

本發明之疊層體係至少使用無機基板、矽烷偶合劑及高分子薄膜,而 由此等所構成之疊層體。 The laminated system of the present invention uses at least an inorganic substrate, a decane coupling agent, and a polymer film, and The laminate thus formed.

<無機基板> <Inorganic substrate>

在本發明中,使用無機基板作為高分子薄膜之支撐體。無機基板只要是可作為由無機物所構成之基板使用的板狀物即可,例如可列舉以玻璃板、陶瓷板、半導體晶圓、金屬等為主體者,以及積層成為此等玻璃板、陶瓷板、矽晶圓、金屬之複合體、分散有此等者、含有此等之纖維者等。 In the present invention, an inorganic substrate is used as a support for the polymer film. The inorganic substrate may be a plate material which can be used as a substrate made of an inorganic material, and examples thereof include a glass plate, a ceramic plate, a semiconductor wafer, a metal, and the like, and a laminate of these glass plates and ceramic plates. , a composite of a wafer, a metal, a dispersion of these, and the like, and the like.

作為前述玻璃板,包含石英玻璃、高矽酸玻璃(96%二氧化矽)、鈉鈣玻璃、鉛玻璃、鋁硼矽酸玻璃、硼矽酸玻璃(PYREX(註冊商標))、硼矽酸玻璃(無鹼)、硼矽酸玻璃(微薄板(microsheet))、鋁矽酸鹽玻璃等。此等之中又以線膨脹係數為5ppm/K以下者為較佳,市售物則以液晶用玻璃之Corning公司製的「Corning(註冊商標)7059」或「Corning(註冊商標)1737」、「EAGLE」、旭硝子公司製的「AN100」、日本電氣硝子公司製的「OA10」、SCHOTT公司製的「AF32」等較理想。 As the glass plate, quartz glass, perrhenic acid glass (96% ceria), soda lime glass, lead glass, aluminoborosilicate glass, borosilicate glass (PYREX (registered trademark)), borosilicate glass (alkali-free), borosilicate glass (microsheet), aluminosilicate glass, and the like. Among these, it is preferable that the coefficient of linear expansion is 5 ppm/K or less, and the commercially available product is "Corning (registered trademark) 7059" or "Corning (registered trademark) 1737" manufactured by Corning Co., Ltd. for liquid crystal glass. "EAGLE", "AN100" manufactured by Asahi Glass Co., Ltd., "OA10" manufactured by Nippon Electric Glass Co., Ltd., and "AF32" manufactured by SCHOTT Co., Ltd. are preferable.

作為前述陶瓷板,包含Al2O3、莫來石、AlN、SiC、Si3N4、BN、結晶化玻璃、堇青石、鋰輝石、Pb-BSG+CaZrO3+Al2O3、結晶化玻璃+Al2O3、結晶化Ca-BSG、BSG+石英、BSG+石英、BSG+Al2O3、Pb+BSG+Al2O3、玻璃陶瓷、微晶玻璃(zerodur)材料等基板用陶瓷、TiO2、鈦酸鍶、鈦酸鈣、鈦酸鎂、氧化鋁、MgO、凍石(steatite)、BaTi4O9、BaTiO3、BaTi4+CaZrO3、BaSrCaZrTiO3、Ba(TiZr)O3、PMN-PT或PFN-PFW等電容材料、PbNb2O6、Pb0.5Be0.5Nb2O6、PbTiO3、BaTiO3、PZT、0.855PZT-95PT-0.5BT、0.873PZT-0.97PT-0.3BT、PLZT等壓電材料。 The ceramic plate includes Al 2 O 3 , mullite, AlN, SiC, Si 3 N 4 , BN, crystallized glass, cordierite, spodumene, Pb-BSG+CaZrO 3 +Al 2 O 3 , and crystallization. Ceramics for substrates such as glass + Al 2 O 3 , crystallized Ca-BSG, BSG + quartz, BSG + quartz, BSG + Al 2 O 3 , Pb + BSG + Al 2 O 3 , glass ceramics, and glass ceramics (zerodur) TiO 2 , barium titanate, calcium titanate, magnesium titanate, alumina, MgO, stearite, BaTi 4 O 9 , BaTiO 3 , BaTi 4 +CaZrO 3 , BaSrCaZrTiO 3 , Ba(TiZr)O 3 , Capacitor materials such as PMN-PT or PFN-PFW, PbNb 2 O 6 , Pb 0.5 Be 0.5 Nb 2 O 6 , PbTiO 3 , BaTiO 3 , PZT, 0.855PZT-95PT-0.5BT, 0.873PZT-0.97PT-0.3BT, Piezoelectric materials such as PLZT.

作為前述半導體晶圓,可使用矽晶圓、半導體晶圓、化合物半導體晶圓等,以矽晶圓而言包含將單結晶或多結晶之矽加工於薄板上者、摻雜為n型或p型之矽晶圓、本質矽晶圓(intrinsic silicon wafer)等全部,又,亦包含在矽晶圓的表面沉積有氧化矽層或各種薄膜之矽晶圓,矽晶圓以外亦可使用鍺、矽-鍺、鎵-砷、鋁-鎵-銦、氮-磷-砷-銻、SiC、InP(銦燐)、InGaAs、 GaInNAs、LT、LN、ZnO(氧化鋅)或CdTe(碲化鎘)、ZnSe(硒化鋅)等半導體晶圓、化合物半導體晶圓等。 As the semiconductor wafer, a germanium wafer, a semiconductor wafer, a compound semiconductor wafer, or the like can be used, and in the case of a germanium wafer, a single crystal or a polycrystalline tantalum is processed on a thin plate, and doped with n-type or p. Types of wafers, intrinsic silicon wafers, etc., and also include germanium oxide or various thin films deposited on the surface of germanium wafers.矽-锗, gallium-arsenic, aluminum-gallium-indium, nitrogen-phosphorus-arsenic-tellurium, SiC, InP (indium germanium), InGaAs, Semiconductor wafers such as GaInNAs, LT, LN, ZnO (zinc oxide) or CdTe (cadmium telluride), ZnSe (zinc selenide), and compound semiconductor wafers.

作為前述金屬,包含W、Mo、Pt、Fe、Ni、Au等單一元素金屬、英高鎳(Inconel)、蒙鎳(Monel)、鎳鉻立克(Nimonic)、碳銅、Fe-Ni系恆範鋼(invar steel)合金、超恆範鋼(super invar steel)合金之類的合金等。又,亦包含在此等金屬附加其它金屬層、陶瓷層而成之多層金屬板。此時,若與附加層之全體的CTE為低,則亦可將Cu、Al等用於主金屬層。以作為附加金屬層所使用之金屬而言,若為使與聚醯亞胺薄膜之密合性牢固者、或具有不擴散、耐藥品性或耐熱性良好等特性者則未限定,而可列舉鉻、鎳、TiN、含有Mo之Cu作為較佳例。 The metal includes a single element metal such as W, Mo, Pt, Fe, Ni, or Au, Inconel, Monel, Nimonic, carbon copper, and Fe-Ni. Alloys such as invar steel alloys and super invar steel alloys. Further, a multilayer metal plate in which another metal layer or a ceramic layer is added to the metal is also included. At this time, if the CTE of the entire additional layer is low, Cu, Al, or the like may be used for the main metal layer. The metal to be used as the additional metal layer is not limited as long as it has a good adhesion to the polyimide film or has properties such as non-diffusion, chemical resistance, or heat resistance. Chromium, nickel, TiN, and Cu containing Mo are preferred examples.

前述無機基板之平面部分係以充分平坦為較佳。具體而言係表面粗糙度之P-V值為50nm以下、更佳為20nm以下、進一步更佳為5nm以下。若較其粗糙,則有高分子薄膜與無機基板之接著強度不充分之情形。 It is preferable that the planar portion of the inorganic substrate is sufficiently flat. Specifically, the P-V value of the surface roughness is 50 nm or less, more preferably 20 nm or less, still more preferably 5 nm or less. If it is rough, the bonding strength between the polymer film and the inorganic substrate may be insufficient.

前述無機基板之厚度並未特別限制,而由操作性之觀點來看係以10mm以下之厚度為較佳、3mm以下為更佳、1.3mm以下為進一步更佳。關於厚度之恰當值並未特別限制,而以0.07mm以上、較佳為0.15mm以上、更佳為0.3mm以上為適合使用。 The thickness of the inorganic substrate is not particularly limited, but is preferably 10 mm or less, more preferably 3 mm or less, and still more preferably 1.3 mm or less from the viewpoint of workability. The appropriate value of the thickness is not particularly limited, and is suitably used in an amount of 0.07 mm or more, preferably 0.15 mm or more, more preferably 0.3 mm or more.

前述無機基板之面積,由疊層體或可撓性電子元件之生產效率‧成本的觀點來看,係以大面積為較佳。1000cm2以上為較佳、1500cm2為更佳、2000cm2為進一步更佳。 The area of the inorganic substrate is preferably a large area from the viewpoint of the production efficiency of the laminate or the flexible electronic component. More preferably, it is more preferably 1000 cm 2 or more, more preferably 1500 cm 2 , and still more preferably 2000 cm 2 .

<矽烷偶合劑> <decane coupling agent>

本發明之矽烷偶合劑係指物理或化學性介於暫時支撐體與高分子薄膜之間,具有提高兩者間的接著力之作用的化合物。 The decane coupling agent of the present invention refers to a compound which is physically or chemically interposed between a temporary support and a polymer film and has an effect of improving the adhesion between the two.

作為矽烷偶合劑之較佳具體例,可列舉N-2-(胺基乙基)-3-胺基丙基甲基二甲氧基矽烷、N-2-(胺基乙基)-3-胺基丙基三甲氧基矽烷、N-2-(胺基乙基)-3-胺基丙基三乙氧基矽烷、3-胺基丙基三甲氧基矽烷、3-胺基丙基三乙 氧基矽烷、3-三乙氧基矽基-N-(1,3-二甲基-亞丁基)丙胺、2-(3,4-環氧環己基)乙基三甲氧基矽烷、3-環氧丙氧基丙基三甲氧基矽烷、3-環氧丙氧基內基甲基二乙氧基矽烷、3-環氧丙氧基丙基三乙氧基矽烷、乙烯基三氯矽烷、乙烯基三甲氧基矽烷、乙烯基三乙氧基矽烷、3-環氧丙氧基丙基三甲氧基矽烷、3-環氧丙氧基丙基甲基二乙氧基矽烷、3-環氧丙氧基丙基三乙氧基矽烷、對苯乙烯基三甲氧基矽烷、3-甲基丙烯醯氧基丙基甲基二甲氧基矽烷、3-甲基丙烯醯氧基丙基三甲氧基矽烷、3-甲基丙烯醯氧基丙基甲基二乙氧基矽烷、3-甲基丙烯醯氧基丙基三乙氧基矽烷、3-丙烯醯氧基丙基三甲氧基矽烷、N-苯基-3-胺基丙基三甲氧基矽烷、N-(乙烯基苄基)-2-胺基乙基-3-胺基丙基三甲氧基矽烷鹽酸鹽、3-脲基丙基三乙氧基矽烷、3-氯丙基三甲氧基矽烷、3-巰基丙基甲基二甲氧基矽烷、3-巰基丙基三甲氧基矽烷、雙(三乙氧基矽基丙基)四硫醚、3-異氰酸酯丙基三乙氧基矽烷、參-(3-三甲氧基矽基丙基)異三聚氰酸酯、氯甲基苯乙基三甲氧基矽烷、氯甲基三甲氧基矽烷、胺苯基三甲氧基矽烷、胺苯乙基三甲氧基矽烷、胺苯基胺基甲基苯乙基三甲氧基矽烷、六甲基二矽氮烷等。 Preferred examples of the decane coupling agent include N-2-(aminoethyl)-3-aminopropylmethyldimethoxydecane and N-2-(aminoethyl)-3- Aminopropyltrimethoxydecane, N-2-(aminoethyl)-3-aminopropyltriethoxydecane, 3-aminopropyltrimethoxydecane, 3-aminopropyltri B Oxydecane, 3-triethoxyindolyl-N-(1,3-dimethyl-butylene)propylamine, 2-(3,4-epoxycyclohexyl)ethyltrimethoxydecane, 3- Glycidoxypropyltrimethoxydecane, 3-glycidoxy-n-methyldimethyldimethoxydecane, 3-glycidoxypropyltriethoxydecane, vinyltrichloromethane, Vinyl trimethoxy decane, vinyl triethoxy decane, 3-glycidoxypropyl trimethoxy decane, 3-glycidoxypropyl methyl diethoxy decane, 3-epoxy Propoxypropyltriethoxydecane, p-styryltrimethoxydecane, 3-methylpropenyloxypropylmethyldimethoxydecane, 3-methylpropenyloxypropyltrimethoxy Baseline, 3-methylpropenyloxypropylmethyldiethoxydecane, 3-methylpropenyloxypropyltriethoxydecane, 3-propenyloxypropyltrimethoxydecane, N-phenyl-3-aminopropyltrimethoxydecane, N-(vinylbenzyl)-2-aminoethyl-3-aminopropyltrimethoxydecane hydrochloride, 3-ureido Propyltriethoxydecane, 3-chloropropyltrimethoxydecane, 3-mercaptopropylmethyldimethoxyindole , 3-mercaptopropyltrimethoxydecane, bis(triethoxymethylpropyl)tetrasulfide, 3-isocyanatepropyltriethoxydecane, gins-(3-trimethoxydecylpropyl) Isocyanurate, chloromethylphenethyltrimethoxydecane, chloromethyltrimethoxydecane, amine phenyltrimethoxydecane, amine phenethyltrimethoxydecane, amine phenylaminomethyl Phenylethyltrimethoxynonane, hexamethyldioxane, and the like.

作為本發明可使用之矽烷偶合劑,除了上述以外亦可使用正丙基三甲氧基矽烷、丁基三氯矽烷、2-氰基乙基三乙氧基矽烷、環己基三氯矽烷、癸基三氯矽烷、二乙醯氧基二甲基矽烷、二乙氧基二甲基矽烷、二甲氧基二甲基矽烷、二甲氧基二苯基矽烷、二甲氧基甲基苯基矽烷、十二基三氯矽烷、十二基三甲氧基矽烷、乙基三氯矽烷、己基三甲氧基矽烷、十八基三乙氧基矽烷、十八基三甲氧基矽烷、正辛基三氯矽烷、正辛基三乙氧基矽烷、正辛基三甲氧基矽烷、三乙氧基乙基矽烷、三乙氧基甲基矽烷、三甲氧基甲基矽烷、三甲氧基苯基矽烷、戊基三乙氧基矽烷、戊基三氯矽烷、三乙醯氧基甲基矽烷、三氯己基矽烷、三氯甲基矽烷、三氯十八基矽烷、三氯丙基矽烷、三氯十四基矽烷、三甲氧基丙基矽烷、烯丙基三氯矽烷、烯丙基三乙氧基矽烷、烯丙基三甲氧基矽烷、二乙氧基甲基乙烯基矽烷、二甲氧基甲基乙烯基矽烷、三氯乙烯基矽烷、三乙氧基乙烯基矽烷、乙烯基參(2-甲氧基乙氧基)矽烷、三氯-2-氰基乙基矽烷、二乙氧基(3-環氧丙基氧丙基)甲基矽烷、3-環氧丙基氧丙基(二甲氧基)甲基矽烷、3-環氧丙基氧丙基 三甲氧基矽烷等。 As the decane coupling agent which can be used in the present invention, in addition to the above, n-propyltrimethoxydecane, butyltrichlorodecane, 2-cyanoethyltriethoxydecane, cyclohexyltrichlorodecane, fluorenyl group can also be used. Trichlorodecane, diethyl methoxy dimethyl decane, diethoxy dimethyl decane, dimethoxy dimethyl decane, dimethoxy diphenyl decane, dimethoxymethyl phenyl decane , dodecyltrichlorodecane, dodecyltrimethoxydecane, ethyltrichlorodecane, hexyltrimethoxydecane,octadecyltriethoxydecane,octadecyltrimethoxydecane, n-octyltrichloro Decane, n-octyltriethoxydecane, n-octyltrimethoxydecane, triethoxyethyldecane, triethoxymethyldecane, trimethoxymethylnonane, trimethoxyphenylnonane, pentane Triethoxy decane, pentyl trichloro decane, triethoxy methoxymethyl decane, trichlorohexyl decane, trichloromethyl decane, trichlorooctadecyl decane, trichloropropyl decane, trichlorotetradecane Base decane, trimethoxy propyl decane, allyl trichloro decane, allyl triethoxy decane, allyl tri Oxy decane, diethoxymethyl vinyl decane, dimethoxymethyl vinyl decane, trichlorovinyl decane, triethoxy vinyl decane, vinyl ginseng (2-methoxy ethoxy group) ) decane, trichloro-2-cyanoethyl decane, diethoxy (3-epoxypropyloxypropyl) methyl decane, 3-epoxypropyloxypropyl (dimethoxy) methyl Decane, 3-epoxypropyloxypropyl Trimethoxy decane and the like.

在該矽烷偶合劑之中,本發明所適合使用之矽烷偶合劑係以偶合劑的每一分子具有1個矽原子之化學結構的矽烷偶合劑為較佳。 Among the decane coupling agents, a decane coupling agent which is suitably used in the present invention is preferably a decane coupling agent having a chemical structure of one fluorene atom per molecule of the coupling agent.

作為本發明中特佳之矽烷偶合劑,可列舉N-2-(胺基乙基)-3-胺基丙基甲基二甲氧基矽烷、N-2-(胺基乙基)-3-胺基丙基三甲氧基矽烷、N-2-(胺基乙基)-3-胺基丙基三乙氧基矽烷、3-胺基丙基三甲氧基矽烷、3-胺基丙基三乙氧基矽烷、3-三乙氧基矽基-N-(1,3-二甲基-亞丁基)丙胺、2-(3,4-環氧環己基)乙基三甲氧基矽烷、3-環氧丙氧基丙基三甲氧基矽烷、3-環氧丙氧基丙基甲基二乙氧基矽烷、3-環氧丙氧基丙基三乙氧基矽烷、胺苯基三甲氧基矽烷、胺苯乙基三甲氧基矽烷、胺苯基胺基甲基苯乙基三甲氧基矽烷等。當製程尤其要求高耐熱性時,係以Si與胺基之間以芳香族基連結者為較佳。 Preferred examples of the decane coupling agent in the present invention include N-2-(aminoethyl)-3-aminopropylmethyldimethoxydecane and N-2-(aminoethyl)-3- Aminopropyltrimethoxydecane, N-2-(aminoethyl)-3-aminopropyltriethoxydecane, 3-aminopropyltrimethoxydecane, 3-aminopropyltri Ethoxy decane, 3-triethoxyindolyl-N-(1,3-dimethyl-butylene)propylamine, 2-(3,4-epoxycyclohexyl)ethyltrimethoxydecane, 3 - glycidoxypropyltrimethoxydecane, 3-glycidoxypropylmethyldiethoxydecane, 3-glycidoxypropyltriethoxydecane, amine phenyltrimethoxy Base decane, amine phenethyl trimethoxy decane, amine phenylaminomethyl phenethyl trimethoxy decane, and the like. When the process particularly requires high heat resistance, it is preferred to use an aromatic group to bond between Si and an amine group.

此外,本發明因應需要,亦可併用磷系偶合劑、鈦酸酯系偶合劑等。 Further, the present invention may be used in combination with a phosphorus-based coupling agent, a titanate-based coupling agent, or the like.

<矽烷偶合劑之塗佈方法> <Coating method of decane coupling agent>

在以往的技術中,矽烷偶合劑之塗佈係在將矽烷偶合劑以醇等溶媒稀釋之溶液狀態下進行。然而,本發明具有隔著氣相進行該矽烷偶合劑塗佈步驟之特徵。亦即,本發明係藉由使無機基板暴露於矽烷偶合劑的蒸氣、即實質上為氣體狀態的矽烷偶合劑來進行塗佈。矽烷偶合劑的蒸氣可藉由將液體狀態的矽烷偶合劑加溫至40℃~矽烷偶合劑之沸點為止的溫度來得到。矽烷偶合劑之沸點因化學結構而異,大約為100~250℃之範圍。惟200℃以上的加熱有引起矽烷偶合劑之有機基側的副反應之虞而不佳。 In the prior art, the coating of the decane coupling agent is carried out in a state in which the decane coupling agent is diluted with a solvent such as an alcohol. However, the present invention is characterized by the step of coating the decane coupling agent through a vapor phase. That is, the present invention is applied by exposing an inorganic substrate to a vapor of a decane coupling agent, that is, a substantially gaseous decane coupling agent. The vapor of the decane coupling agent can be obtained by heating the liquid decane coupling agent to a temperature of 40 ° C to the boiling point of the decane coupling agent. The boiling point of the decane coupling agent varies depending on the chemical structure, and is approximately in the range of 100 to 250 °C. However, heating at 200 ° C or higher has a side effect of causing side reactions on the organic side of the decane coupling agent.

加溫矽烷偶合劑之環境可在加壓下、約略常壓下、減壓下之任一者,而當促進矽烷偶合劑之汽化時係以約略常壓下或減壓下為較佳。由於大多數的矽烷偶合劑係可燃性液體,因此在密閉容器內、較佳為容器內以非活性氣體取代後進行汽化作業為較佳。 The environment for heating the decane coupling agent may be any one under pressure, about normal pressure, or reduced pressure, and it is preferred to promote vaporization of the decane coupling agent at about atmospheric pressure or under reduced pressure. Since most of the decane coupling agents are flammable liquids, it is preferred to carry out the vaporization operation after replacing them with a non-reactive gas in a sealed container, preferably a container.

使無機基板暴露於矽烷偶合劑之時間並未特別限制,而為20小時以內、較佳為60分鐘以內、進一步更佳為15分鐘以內、再進一步更佳為1分鐘以內。 The time for exposing the inorganic substrate to the decane coupling agent is not particularly limited, but is within 20 hours, preferably within 60 minutes, further preferably within 15 minutes, and still more preferably within 1 minute.

使無機基板暴露於矽烷偶合劑期間的無機基板溫度,依據矽烷偶合劑 的種類、與所求之矽烷偶合劑層的厚度而控制於-50℃至200℃之間的適當溫度為較佳。 Exposure of the inorganic substrate to the temperature of the inorganic substrate during the decane coupling agent, depending on the decane coupling agent A suitable temperature for controlling the type between the range of -50 ° C and 200 ° C and the thickness of the desired decane coupling agent layer is preferred.

經暴露於矽烷偶合劑之無機基板,較佳為在暴露後加熱至70℃~200℃、進一步更佳為加熱至75℃~150℃。藉由該加熱,無機基板表面的羥基等、與矽烷偶合劑的烷氧基或矽氮烷基反應,而完成矽烷偶合劑處理。加熱所需時間係10秒以上10分鐘左右以內。當溫度過高或時間過長時,有發生偶合劑之劣化的情形。又,若過短則無法得到處理效果。此外,當暴露於矽烷偶合劑中的基板溫度已為80℃以上時,可省略事後的加熱。 The inorganic substrate exposed to the decane coupling agent is preferably heated to 70 ° C to 200 ° C after exposure, and more preferably heated to 75 ° C to 150 ° C. By this heating, a hydroxyl group or the like on the surface of the inorganic substrate is reacted with an alkoxy group or a decyl group of a decane coupling agent to complete the treatment with a decane coupling agent. The time required for heating is within 10 seconds or more and 10 minutes or less. When the temperature is too high or the time is too long, there is a case where the deterioration of the coupling agent occurs. Moreover, if it is too short, the processing effect cannot be obtained. Further, when the temperature of the substrate exposed to the decane coupling agent is already 80 ° C or more, the subsequent heating can be omitted.

本發明係以無機基板的矽烷偶合劑塗佈面以朝下固持而暴露於矽烷偶合劑蒸氣為較佳。塗佈矽烷偶合劑之溶液的以往方法,由於在塗佈中及塗佈前後,無機基板的塗佈面必為朝上,因此無法否定作業環境下的飄浮異物等沉降於無機基板表面之可能性。然而本發明由於可使無機基板朝下固持,因此可大幅減少環境中的異物附著。 In the present invention, it is preferred that the decane coupling agent coated surface of the inorganic substrate is held downward to be exposed to the decane coupling agent vapor. In the conventional method of applying a solution of a decane coupling agent, since the coated surface of the inorganic substrate is always facing upward during and after the application, it is impossible to deny the possibility that the floating foreign matter in the working environment settles on the surface of the inorganic substrate. . However, in the present invention, since the inorganic substrate can be held downward, the adhesion of foreign matter in the environment can be greatly reduced.

此外,藉由短波長UV/臭氧照射等方法清淨化矽烷偶合劑處理前之無機基板表面,或者以液體洗淨劑清淨化等,為較佳的操作。 Further, it is preferred to clean the surface of the inorganic substrate before the treatment with the decane coupling agent by short-wavelength UV/ozone irradiation or the like, or to purify it with a liquid detergent.

關於偶合劑之塗佈量、厚度,理論上只要有1分子層即足夠,而在機械設計上為可忽略之程度的厚度即已足夠。一般而言係小於400nm(小於0.4μm)、200nm以下(0.2μm以下)為較佳、進一步實用上係以100nm以下(0.1μm以下)為較佳、更佳為50nm以下、進一步更佳為10nm以下。惟推測若計算上落在5nm以下之區域則偶合劑無法作成均勻的塗膜,而會以團簇狀存在之情況,而較不佳。 The coating amount and thickness of the coupling agent are theoretically sufficient as long as one molecular layer is sufficient, and a thickness which is negligible in mechanical design is sufficient. In general, it is preferably less than 400 nm (less than 0.4 μm) and 200 nm or less (0.2 μm or less), more preferably 100 nm or less (0.1 μm or less), more preferably 50 nm or less, still more preferably 10 nm. the following. However, it is presumed that the coupling agent cannot be formed into a uniform coating film if it is calculated to fall below 5 nm, but it may be in the form of clusters, which is less preferable.

偶合劑層之膜厚,可由橢圓偏振法或塗佈時之偶合劑溶液的濃度與塗佈量來計算求得。 The film thickness of the coupling agent layer can be calculated from the ellipsometry method or the concentration and coating amount of the coupling agent solution at the time of coating.

<無機基板側之圖案化處理> <Patterning Processing on the Side of Inorganic Substrate>

在本發明中,可在無機基板側進行圖案化處理。在此,圖案化係指有意地製作操作偶合劑之塗佈量或活性度等之區域。藉此,疊層體中具有無機基板與高分子薄膜之間的接著強度相異的良好接著部分與易剝離部分, 且該良好接著部分與該易剝離部分可形成規定的圖案。作為圖案化處理,可例示在進行矽烷偶合劑塗佈時,使用事先以規定的圖案準備之光罩,而操作矽烷偶合劑之塗佈量的方法。又,亦可在矽烷偶合劑之塗佈面照射活性能量射線,而在此時藉由併用遮蔽或掃描操作等手法來圖案化。在此,照射活性能量射線係包含照射紫外線、電子束、X射線等能量射線之操作,進一步包含兼具如極短波長之紫外線照射處理般的紫外線照射光效果、與同時在照射面附近發生之臭氧氣體暴露效果者。再者,此等以外,亦可藉由電暈處理、真空電漿處理、常壓電漿處理、噴砂處理等來進行圖案化處理。 In the present invention, the patterning treatment can be performed on the inorganic substrate side. Here, the patterning means an area in which the coating amount, activity, and the like of the operation coupling agent are intentionally produced. Thereby, the laminate has a good adhesion portion and an easily peelable portion in which the bonding strength between the inorganic substrate and the polymer film is different. And the good adhesion portion and the easily peelable portion can form a prescribed pattern. As the patterning treatment, a method of operating the coating of the decane coupling agent by using a mask prepared in a predetermined pattern in the case of applying the decane coupling agent can be exemplified. Further, the active energy ray may be irradiated onto the coated surface of the decane coupling agent, and at this time, patterning may be performed by a method such as masking or scanning operation. Here, the irradiation active energy ray includes an operation of irradiating an energy ray such as an ultraviolet ray, an electron beam, or an X-ray, and further includes an ultraviolet ray irradiation effect such as an ultraviolet ray irradiation treatment of a very short wavelength, and simultaneously occurring in the vicinity of the irradiation surface. Ozone gas exposure effect. Further, in addition to these, patterning treatment may be performed by corona treatment, vacuum plasma treatment, normal piezoelectric slurry treatment, sandblasting treatment, or the like.

<高分子薄膜> <Polymer film>

作為本發明之高分子薄膜,可使用聚乙烯、聚丙烯、聚對苯二甲酸乙二酯、聚對苯二甲酸丁二酯、聚萘二甲酸乙二酯、全芳香族聚酯、其它共聚合聚酯、聚甲基丙烯酸甲酯、其它共聚合丙烯酸酯、聚碳酸酯、聚醯胺、聚碸、聚醚碸、聚醚酮、聚醯胺醯亞胺、聚醚醯亞胺、芳香族聚醯亞胺、脂環族聚醯亞胺、氟化聚醯亞胺、乙酸纖維素、硝酸纖維素、芳香族聚醯胺、聚氯乙烯、聚酚、聚芳香酯、聚苯硫醚、聚苯醚、聚苯乙烯等薄膜。本發明中效果尤其顯著‧有用者為耐熱性為100℃以上之高分子,即所謂工程塑膠之薄膜。在此,耐熱性係指玻璃轉移溫度或熱變形溫度。 As the polymer film of the present invention, polyethylene, polypropylene, polyethylene terephthalate, polybutylene terephthalate, polyethylene naphthalate, wholly aromatic polyester, and the like can be used. Polymeric polyester, polymethyl methacrylate, other copolymerized acrylates, polycarbonates, polyamines, polyfluorenes, polyether oximes, polyether ketones, polyamidoximines, polyether oximines, aromatics Polyimine, alicyclic polyimine, fluorinated polyimine, cellulose acetate, nitrocellulose, aromatic polyamine, polyvinyl chloride, polyphenol, polyaryl ester, polyphenylene sulfide , polyphenylene ether, polystyrene and other films. The effect of the present invention is particularly remarkable. A useful one is a polymer having a heat resistance of 100 ° C or higher, that is, a film of a so-called engineering plastic. Here, heat resistance means a glass transition temperature or a heat distortion temperature.

本發明之高分子薄膜在前述高分子材料之中,關於熱塑性之高分子材料,可藉由熔融延伸法來得到薄膜。又,關於非熱塑性之高分子主要採用溶液製膜法。又,作為本發明之特殊例,可採用在無機基板上塗佈乾燥高分子材料其本身、或者塗佈乾燥前驅物之溶液而進行薄膜化之手法。 In the polymer film of the present invention, among the polymer materials, a thermoplastic polymer material can be obtained by a melt extension method. Further, the non-thermoplastic polymer is mainly a solution film forming method. Further, as a specific example of the present invention, a method of applying a dried polymer material to an inorganic substrate or applying a solution of a dried precursor to thin the film may be employed.

本發明之高分子薄膜之厚度係以3μm以上為較佳、11μm以上為更佳、進一步以24μm以上為較佳、更進一步以45μm以上為較佳。高分子薄膜之厚度的上限並未特別限制,而由作為可撓性電子元件之要求而言以250μm以下為較佳、進一步為150μm以下、更進一步以90μm以下為較佳。 The thickness of the polymer film of the present invention is preferably 3 μm or more, more preferably 11 μm or more, still more preferably 24 μm or more, and still more preferably 45 μm or more. The upper limit of the thickness of the polymer film is not particularly limited, but is preferably 250 μm or less, more preferably 150 μm or less, and still more preferably 90 μm or less as required for the flexible electronic component.

本發明特別適合使用的高分子薄膜係聚醯亞胺薄膜,可使用芳香族聚醯亞胺、脂環族聚醯亞胺、聚醯胺醯亞胺、聚醚醯亞胺等。當將本發明特別使用於製造可撓性顯示器元件時,係以使用具有無色透明性之聚醯亞胺系樹脂薄膜為較佳,而當形成反射型、或自發光型的顯示器之背面元件時,則未特別限於此。 The polymer film-based polyimine film which is particularly suitable for use in the present invention may be an aromatic polyimine, an alicyclic polyimine, a polyamidimide or a polyether quinone. When the present invention is particularly used for the manufacture of a flexible display element, it is preferable to use a polyimide film having colorless transparency, and when forming a back surface element of a reflective or self-luminous type display. , is not particularly limited to this.

一般而言,聚醯亞胺薄膜係將在溶媒中使二胺類與四羧酸類反應所得之聚醯胺酸(聚醯亞胺前驅物)溶液,塗佈於聚醯亞胺薄膜製作用支撐體,乾燥而作成生坯薄膜(亦稱為「前驅物薄膜」或「聚醯胺酸薄膜」),進一步在聚醯亞胺薄膜製作用支撐體上、或者在自該支撐體剝離之狀態下高溫熱處理生坯薄膜而使其進行脫水閉環反應,藉此得到。 In general, a polyimide film is a polyacrylamide (polyimine precursor) solution obtained by reacting a diamine with a tetracarboxylic acid in a solvent, and is applied to a support for producing a polyimide film. The body is dried to form a green film (also referred to as "precursor film" or "poly-proline film"), and further on the support for producing a polyimide film or in a state of being peeled off from the support The green film is heat-treated at a high temperature to carry out a dehydration ring-closure reaction, thereby obtaining.

作為構成聚醯胺酸之二胺類,並無特別限制,可使用通常用於聚醯亞胺合成之芳香族二胺類、脂肪族二胺類、脂環式二胺類等。從耐熱性之觀點,以芳香族二胺類為較佳,在芳香族二胺類之中,以具有苯并唑結構之芳香族二胺類為更佳。若使用具有苯并唑結構之芳香族二胺類,則在顯現高耐熱性的同時,可顯現高彈性係數、低熱收縮性、低線膨脹係數。二胺類可單獨使用亦可併用二種以上。 The diamine constituting the polyamic acid is not particularly limited, and an aromatic diamine, an aliphatic diamine or an alicyclic diamine which is generally used for the synthesis of polyimine can be used. From the viewpoint of heat resistance, aromatic diamines are preferred, and among aromatic diamines, benzo has The aromatic diamines of the azole structure are more preferred. If using benzo The aromatic diamines of the azole structure exhibit high heat resistance, low heat shrinkage, and low linear expansion coefficient while exhibiting high heat resistance. The diamines may be used alone or in combination of two or more.

作為具有苯并唑結構之芳香族二胺類,並無特別限定,例如可列舉5-胺基-2-(對胺苯基)苯并唑、6-胺基-2-(對胺苯基)苯并唑、5-胺基-2-(間胺苯基)苯并唑、6-胺基-2-(間胺苯基)苯并唑、2,2’-對伸苯基雙(5-胺基苯并唑)、2,2’-對伸苯基雙(6-胺基苯并唑)、1-(5-胺基苯并唑)-4-(6-胺基苯并唑)苯、2,6-(4,4’-二胺基二苯基)苯并[1,2-d:5,4-d’]雙唑、2,6-(4,4’-二胺基二苯基)苯并[1,2-d:4,5-d’]雙唑、2,6-(3,4’-二胺基二苯基)苯并[1,2-d:5,4-d’]雙唑、2,6-(3,4’-二胺基二苯基)苯并[1,2-d:4,5-d’]雙唑、2,6-(3,3’-二胺基二苯基)苯并[1,2-d:5,4-d’]雙唑、2,6-(3,3’-二胺基二苯基)苯并[1,2-d:4,5-d’]雙唑等。 Benzene The aromatic diamine of the azole structure is not particularly limited, and examples thereof include 5-amino-2-(p-aminophenyl)benzo. Azole, 6-amino-2-(p-aminophenyl)benzo Azole, 5-amino-2-(m-aminophenyl)benzo Azole, 6-amino-2-(m-aminophenyl)benzo Azole, 2,2'-p-phenylene bis(5-aminobenzo) Oxazole), 2,2'-p-phenylene bis(6-aminobenzo) Oxazole), 1-(5-aminobenzophenone Azole)-4-(6-aminobenzone) Benzene, 2,6-(4,4'-diaminodiphenyl)benzo[1,2-d:5,4-d'] Azole, 2,6-(4,4'-diaminodiphenyl)benzo[1,2-d:4,5-d'] Azole, 2,6-(3,4'-diaminodiphenyl)benzo[1,2-d:5,4-d'] Azole, 2,6-(3,4'-diaminodiphenyl)benzo[1,2-d:4,5-d'] Azole, 2,6-(3,3'-diaminodiphenyl)benzo[1,2-d:5,4-d'] Azole, 2,6-(3,3'-diaminodiphenyl)benzo[1,2-d:4,5-d'] Oxazole and the like.

作為上述之具有苯并唑結構之芳香族二胺類以外的芳香族二胺類, 例如可列舉2,2’-二甲基-4,4’-二胺基聯苯、1,4-雙[2-(4-胺苯基)-2-丙基]苯(雙苯胺)、1,4-雙(4-胺基-2-三氟甲基苯氧基)苯、2,2’-二三氟甲基-4,4’-二胺基聯苯、4,4’-雙(4-胺基苯氧基)聯苯、4,4’-雙(3-胺基苯氧基)聯苯、雙[4-(3-胺基苯氧基)苯基]酮、雙[4-(3-胺基苯氧基)苯基]硫醚、雙[4-(3-胺基苯氧基)苯基]碸、2,2-雙[4-(3-胺基苯氧基)苯基]丙烷、2,2-雙[4-(3-胺基苯氧基)苯基]-1,1,1,3,3,3-六氟丙烷、間苯二胺、鄰苯二胺、對苯二胺、間胺基苄基胺、對胺基苄基胺、3,3’-二胺基二苯基醚、3,4’-二胺基二苯基醚、4,4’-二胺基二苯基醚、3,3’-二胺基二苯基硫醚、3,3’-二胺基二苯基亞碸、3,4’-二胺基二苯基亞碸、4,4’-二胺基二苯基亞碸、3,3’-二胺基二苯基碸、3,4’-二胺基二苯基碸、4,4’-二胺基二苯基碸、3,3’-二胺基二苯甲酮、3,4’-二胺基二苯甲酮、4,4’-二胺基二苯甲酮、3,3’-二胺基二苯基甲烷、3,4’-二胺基二苯基甲烷、4,4’-二胺基二苯基甲烷、雙[4-(4-胺基苯氧基)苯基]甲烷、1,1-雙[4-(4-胺基苯氧基)苯基]乙烷、1,2-雙[4-(4-胺基苯氧基)苯基]乙烷、1,1-雙[4-(4-胺基苯氧基)苯基]丙烷、1,2-雙[4-(4-胺基苯氧基)苯基]丙烷、1,3-雙[4-(4-胺基苯氧基)苯基]丙烷、2,2-雙[4-(4-胺基苯氧基)苯基]丙烷、1,1-雙[4-(4-胺基苯氧基)苯基]丁烷、1,3-雙[4-(4-胺基苯氧基)苯基]丁烷、1,4-雙[4-(4-胺基苯氧基)苯基]丁烷、2,2-雙[4-(4-胺基苯氧基)苯基]丁烷、2,3-雙[4-(4-胺基苯氧基)苯基]丁烷、2-[4-(4-胺基苯氧基)苯基]-2-[4-(4-胺基苯氧基)-3-甲基苯基]丙烷、2,2-雙[4-(4-胺基苯氧基)-3-甲基苯基]丙烷、2-[4-(4-胺基苯氧基)苯基]-2-[4-(4-胺基苯氧基)-3,5-二甲基苯基]丙烷、2,2-雙[4-(4-胺基苯氧基)-3,5-二甲基苯基]丙烷、2,2-雙[4-(4-胺基苯氧基)苯基]-1,1,1,3,3,3-六氟丙烷、1,4-雙(3-胺基苯氧基)苯、1,3-雙(3-胺基苯氧基)苯、1,4-雙(4-胺基苯氧基)苯、4,4’-雙(4-胺基苯氧基)聯苯、雙[4-(4-胺基苯氧基)苯基]酮、雙[4-(4-胺基苯氧基)苯基]硫醚、雙[4-(4-胺基苯氧基)苯基]亞碸、雙[4-(4-胺基苯氧基)苯基]碸、雙[4-(3-胺基苯氧基)苯基]醚、雙[4-(4-胺基苯氧基)苯基]醚、1,3-雙[4-(4-胺基苯氧基)苯甲醯基]苯、1,3-雙[4-(3-胺基苯氧基)苯甲醯基]苯、1,4-雙[4-(3-胺基苯氧基)苯甲醯基]苯、4,4’-雙[(3-胺基苯氧基)苯甲醯基]苯、1,1-雙[4-(3-胺基苯氧基)苯基]丙烷、1,3-雙[4-(3-胺基苯氧基)苯基]丙烷、3,4’-二胺基二苯基硫醚、2,2-雙[3-(3-胺基苯氧基)苯基]-1,1,1,3,3,3-六氟丙烷、雙[4-(3-胺基苯氧基)苯基]甲烷、1,1-雙[4-(3-胺基苯氧基)苯基]乙烷、1,2-雙[4-(3-胺基苯氧基)苯基]乙 烷、雙[4-(3-胺基苯氧基)苯基]亞碸、4,4’-雙[3-(4-胺基苯氧基)苯甲醯基]二苯基醚、4,4’-雙[3-(3-胺基苯氧基)苯甲醯基]二苯基醚、4,4’-雙[4-(4-胺基-α,α-二甲基苄基)苯氧基]二苯甲酮、4,4’-雙[4-(4-胺基-α,α-二甲基苄基)苯氧基]二苯基碸、雙[4-{4-(4-胺基苯氧基)苯氧基}苯基]碸、1,4-雙[4-(4-胺基苯氧基)苯氧基-α,α-二甲基苄基]苯、1,3-雙[4-(4-胺基苯氧基)苯氧基-α,α-二甲基苄基]苯、1,3-雙[4-(4-胺基-6-三氟甲基苯氧基)-α,α-二甲基苄基]苯、1,3-雙[4-(4-胺基-6-氟苯氧基)-α,α-二甲基苄基]苯、1,3-雙[4-(4-胺基-6-甲基苯氧基)-α,α-二甲基苄基]苯、1,3-雙[4-(4-胺基-6-氰基苯氧基)-α,α-二甲基苄基]苯、3,3’-二胺基-4,4’-二苯氧基二苯甲酮、4,4’-二胺基-5,5’-二苯氧基二苯甲酮、3,4’-二胺基-4,5’-二苯氧基二苯甲酮、3,3’-二胺基-4-苯氧基二苯甲酮、4,4’-二胺基-5-苯氧基二苯甲酮、3,4’-二胺基-4-苯氧基二苯甲酮、3,4’-二胺基-5’-苯氧基二苯甲酮、3,3’-二胺基-4,4’-二聯苯氧基二苯甲酮、4,4’-二胺基-5,5’-二聯苯氧基二苯甲酮、3,4’-二胺基-4,5’-二聯苯氧基二苯甲酮、3,3’-二胺基-4-聯苯氧基二苯甲酮、4,4’-二胺基-5-聯苯氧基二苯甲酮、3,4’-二胺基-4-聯苯氧基二苯甲酮、3,4’-二胺基-5’-聯苯氧基二苯甲酮、1,3-雙(3-胺基-4-苯氧基苯甲醯基)苯、1,4-雙(3-胺基-4-苯氧基苯甲醯基)苯、1,3-雙(4-胺基-5-苯氧基苯甲醯基)苯、1,4-雙(4-胺基-5-苯氧基苯甲醯基)苯、1,3-雙(3-胺基-4-聯苯氧基苯甲醯基)苯、1,4-雙(3-胺基-4-聯苯氧基苯甲醯基)苯、1,3-雙(4-胺基-5-聯苯氧基苯甲醯基)苯、1,4-雙(4-胺基-5-聯苯氧基苯甲醯基)苯、2,6-雙[4-(4-胺基-α,α-二甲基苄基)苯氧基]苯并腈、及上述芳香族二胺之芳香環上的氫原子之一部分或全部取代為鹵素原子、碳數1~3之烷基或烷氧基、氰基、或者烷基或烷氧基的氫原子之一部分或全部取代為鹵素原子之碳數1~3的鹵化烷基或烷氧基之芳香族二胺等。 Benzene as the above Examples of the aromatic diamines other than the aromatic diamines of the azole structure include 2,2'-dimethyl-4,4'-diaminobiphenyl and 1,4-bis[2-(4- Aminophenyl)-2-propyl]benzene (diphenylamine), 1,4-bis(4-amino-2-trifluoromethylphenoxy)benzene, 2,2'-ditrifluoromethyl- 4,4'-diaminobiphenyl, 4,4'-bis(4-aminophenoxy)biphenyl, 4,4'-bis(3-aminophenoxy)biphenyl, double [4 -(3-Aminophenoxy)phenyl]one, bis[4-(3-aminophenoxy)phenyl] sulfide, bis[4-(3-aminophenoxy)phenyl] Bismuth, 2,2-bis[4-(3-aminophenoxy)phenyl]propane, 2,2-bis[4-(3-aminophenoxy)phenyl]-1,1,1 ,3,3,3-hexafluoropropane, m-phenylenediamine, o-phenylenediamine, p-phenylenediamine, m-aminobenzylamine, p-aminobenzylamine, 3,3'-diaminodiphenyl Ether, 3,4'-diaminodiphenyl ether, 4,4'-diaminodiphenyl ether, 3,3'-diaminodiphenyl sulfide, 3,3'-diamine Diphenylarylene, 3,4'-diaminodiphenylarylene, 4,4'-diaminodiphenylarylene, 3,3'-diaminodiphenylanthracene, 3, 4'-Diaminodiphenylphosphonium, 4,4'-diaminodiphenylanthracene, 3,3'-diaminobenzophenone, 3,4'-diaminobenzophenone, 4,4'-diaminobenzophenone, 3,3'-diaminodiphenylmethane, 3,4'-diaminodiphenylmethane, 4,4'-diaminodiphenyl Methane, bis[4-(4-aminophenoxy)phenyl]methane, 1,1-bis[4-(4-aminophenoxy)phenyl]ethane, 1,2-double [4] -(4-Aminophenoxy)phenyl]ethane, 1,1-bis[4-(4-aminophenoxy)phenyl]propane, 1,2-bis[4-(4-amine Phenoxy)phenyl]propane, 1,3-bis[4-(4-aminophenoxy)phenyl]propane, 2,2-bis[4-(4-aminophenoxy)benzene Propane, 1,1-bis[4-(4-aminophenoxy)phenyl]butane, 1,3-bis[4-(4-aminophenoxy)phenyl]butane, 1,4-bis[4-(4-aminophenoxy)phenyl]butane, 2,2-bis[4-(4-aminophenoxy)phenyl]butane, 2,3- Bis[4-(4-aminophenoxy)phenyl]butane, 2-[4-(4-aminophenoxy)phenyl]-2-[4-(4-aminophenoxy) )-3-methylphenyl]propane, 2,2-bis[4-(4-aminophenoxy)-3-methylphenyl]propane, 2-[4-(4-aminophenoxyl) Phenyl]-2-[4-(4-aminophenoxy)-3,5-dimethylphenyl]propane, 2,2-bis[4-(4-aminophenoxy) -3,5-dimethylphenyl]propane, 2,2-bis[4-(4-aminophenoxy)phenyl]-1,1,1,3,3,3-hexafluoropropane , 1,4-bis(3-aminophenoxy)benzene, 1,3-bis(3-aminophenoxy)benzene, 1,4-bis(4-aminophenoxy)benzene, 4 , 4'-bis(4-aminophenoxy)biphenyl, bis[4-(4-aminophenoxy)phenyl]one, bis[4-(4-aminophenoxy)phenyl Thiol, bis[4-(4-aminophenoxy)phenyl]anthracene, bis[4-(4-aminophenoxy)phenyl]anthracene, bis[4-(3-amino) Phenoxy)phenyl]ether, bis[4-(4-aminophenoxy)phenyl]ether, 1,3-bis[4-(4-aminophenoxy)benzylidene]benzene , 1,3-bis[4-(3-aminophenoxy)benzylidene]benzene, 1,4-bis[4-(3-aminophenoxy)benzylidene]benzene, 4 , 4'-bis[(3-aminophenoxy)benzylidene]benzene, 1,1-bis[4-(3-aminophenoxy)phenyl]propane, 1,3-double [ 4-(3-Aminophenoxy)phenyl]propane, 3,4'-diaminodiphenyl sulfide, 2,2-bis[3-(3-aminophenoxy)phenyl] -1,1,1,3,3,3-hexafluoropropane, bis[4-(3-aminophenoxy)phenyl]methane, 1,1-bis[4-(3-aminophenoxyl) Phenyl]ethane, 1,2-bis[4-(3-aminophenoxy)phenyl]ethane, bis[4-(3-aminophenoxy)phenyl]arene, 4,4'-bis[3-(4-aminophenoxy)benzylidene]diphenyl ether, 4,4'-bis[3-(3-amino group) Oxy) benzhydryl diphenyl ether, 4,4'-bis[4-(4-amino-α,α-dimethylbenzyl)phenoxy]benzophenone, 4,4 '-Bis[4-(4-Amino-α,α-dimethylbenzyl)phenoxy]diphenylanthracene, bis[4-{4-(4-aminophenoxy)phenoxy }phenyl]anthracene, 1,4-bis[4-(4-aminophenoxy)phenoxy-α,α-dimethylbenzyl]benzene, 1,3-bis[4-(4- Aminophenoxy)phenoxy-α,α-dimethylbenzyl]benzene, 1,3-bis[4-(4-amino-6-trifluoromethylphenoxy)-α,α - dimethylbenzyl]benzene, 1,3-bis[4-(4-amino-6-fluorophenoxy)-α,α-dimethylbenzyl]benzene, 1,3-bis[4 -(4-Amino-6-methylphenoxy)-α,α-dimethylbenzyl]benzene, 1,3-bis[4-(4-amino-6-cyanophenoxy) -α,α-dimethylbenzyl]benzene, 3,3'-diamino-4,4'-diphenoxybenzophenone, 4,4'-diamino-5,5'- Diphenoxybenzophenone, 3,4'-diamino-4,5'-diphenoxybenzophenone, 3,3'-diamino-4-phenoxybenzophenone , 4,4'-diamino-5-phenoxybenzophenone, 3,4'-diamino-4-phenoxybenzophenone, 3,4'-diamino-5' -phenoxybenzophenone, 3,3'-diamino-4,4'-diphenoxybenzophenone, 4,4'-diamino-5 , 5'-diphenoxybenzophenone, 3,4'-diamino-4,5'-diphenoxybenzophenone, 3,3'-diamino-4-linkage Phenoxybenzophenone, 4,4'-diamino-5-biphenoxybenzophenone, 3,4'-diamino-4-biphenoxybenzophenone, 3, 4'-Diamino-5'-biphenoxybenzophenone, 1,3-bis(3-amino-4-phenoxybenzylidene)benzene, 1,4-bis(3- Amino-4-phenoxybenzhydryl)benzene, 1,3-bis(4-amino-5-phenoxybenzylidene)benzene, 1,4-bis(4-amino-5) -phenoxybenzhydryl)benzene, 1,3-bis(3-amino-4-biphenoxybenzylidene)benzene, 1,4-bis(3-amino-4-biphenyl) Oxylbenzylidene)benzene, 1,3-bis(4-amino-5-biphenoxybenzylidene)benzene, 1,4-bis(4-amino-5-biphenoxy) Benzopyridyl)benzene, 2,6-bis[4-(4-amino-α,α-dimethylbenzyl)phenoxy]benzonitrile, and an aromatic ring of the above aromatic diamine The carbon number of one or all of a hydrogen atom partially or wholly substituted with a halogen atom, an alkyl group having 1 to 3 carbon atoms or an alkoxy group, a cyano group, or a hydrogen atom of an alkyl group or an alkoxy group is partially or wholly substituted with a halogen atom. A halogenated alkyl group or an alkoxy aromatic diamine or the like.

作為前述脂肪族二胺類,例如可列舉1,2-二胺基乙烷、1,4-二胺基丁烷、1,5-二胺基戊烷、1,6-二胺基己烷、1,8-二胺基辛烷等。 Examples of the aliphatic diamines include 1,2-diaminoethane, 1,4-diaminobutane, 1,5-diaminopentane, and 1,6-diaminohexane. 1,8-diaminooctane and the like.

作為前述脂環式二胺類,例如可列舉1,4-二胺基環己烷、4,4’-亞甲基雙(2,6-二甲基環己基胺)等。 Examples of the alicyclic diamines include 1,4-diaminocyclohexane and 4,4'-methylenebis(2,6-dimethylcyclohexylamine).

芳香族二胺類以外之二胺(脂肪族二胺類及脂環式二胺類)的合計量係以全部二胺類之20質量%以下為較佳、更佳為10質量%以下、進一步更佳 為5質量%以下。換言之,芳香族二胺類係以全部二胺類之80質量%以上為較佳、更佳為90質量%以上、進一步更佳為95質量%以上。 The total amount of the diamines (aliphatic diamines and alicyclic diamines) other than the aromatic diamines is preferably 20% by mass or less, more preferably 10% by mass or less, based on the total of the diamines. Better It is 5% by mass or less. In other words, the aromatic diamine is preferably 80% by mass or more, more preferably 90% by mass or more, and still more preferably 95% by mass or more based on all the diamines.

作為構成聚醯胺酸之四羧酸類,可使用通常用於聚醯亞胺合成之芳香族四羧酸類(包含其酸酐)、脂肪族四羧酸類(包含其酸酐)、脂環族四羧酸類(包含其酸酐)。其中又以芳香族四羧酸酐類、脂環族四羧酸酐類為較佳,從耐熱性之觀點來看以芳香族四羧酸酐類為更佳,從透光性之觀點來看以脂環族四羧酸類為更佳。當此等為酸酐時,分子內可具有1個或2個酐結構,而較佳為具有2個酐結構者(二酐)。四羧酸類可單獨使用,亦可併用二種以上。 As the tetracarboxylic acid constituting the polyamic acid, an aromatic tetracarboxylic acid (including an acid anhydride thereof) generally used for the synthesis of polyimine, an aliphatic tetracarboxylic acid (including an acid anhydride thereof), or an alicyclic tetracarboxylic acid can be used. (including its anhydride). Among them, aromatic tetracarboxylic anhydrides and alicyclic tetracarboxylic anhydrides are preferable, and aromatic tetracarboxylic anhydrides are more preferable from the viewpoint of heat resistance, and alicyclic rings are used from the viewpoint of light transmittance. Group tetracarboxylic acids are more preferred. When these are anhydrides, they may have one or two anhydride structures in the molecule, and preferably have two anhydride structures (dianhydrides). The tetracarboxylic acids may be used singly or in combination of two or more.

作為脂環族四羧酸類,例如可列舉環丁烷四羧酸、1,2,4,5-環己烷四羧酸、3,3’,4,4’-雙環己基四羧酸等脂環族四羧酸、及此等之酸酐。此等之中又以具有2個酐結構之二酐(例如環丁烷四羧酸二酐、1,2,4,5-環己烷四羧酸二酐、3,3’,4,4’-雙環己基四羧酸二酐等)為較佳。此外,脂環族四羧酸類可單獨使用,亦可併用二種以上。 Examples of the alicyclic tetracarboxylic acid include a lipid such as cyclobutane tetracarboxylic acid, 1,2,4,5-cyclohexanetetracarboxylic acid, and 3,3',4,4'-dicyclohexyltetracarboxylic acid. a cyclotetracarboxylic acid, and an anhydride thereof. Among these, a dianhydride having two anhydride structures (for example, cyclobutane tetracarboxylic dianhydride, 1,2,4,5-cyclohexanetetracarboxylic dianhydride, 3,3', 4, 4) '-Dicyclohexyltetracarboxylic dianhydride or the like) is preferred. Further, the alicyclic tetracarboxylic acids may be used singly or in combination of two or more.

當重視透明性時,脂環式四羧酸類係例如以全部四羧酸類之80質量%以上為較佳、更佳為90質量%以上、進一步更佳為95質量%以上。 When the transparency is important, the alicyclic tetracarboxylic acid is preferably 80% by mass or more, more preferably 90% by mass or more, and still more preferably 95% by mass or more based on all the tetracarboxylic acids.

作為芳香族四羧酸類,並未特別限定,而以苯均四酸殘基(即具有來自苯均四酸之結構者)為較佳、其酸酐為更佳。作為這種芳香族四羧酸類,例如可列舉苯均四酸二酐、3,3’,4,4’-聯苯四羧酸二酐、4,4’-氧二鄰苯二甲酸二酐、3,3’,4,4’-二苯甲酮四羧酸二酐、3,3’,4,4’-二苯基碸四羧酸二酐、2,2-雙[4-(3,4-二羧基苯氧基)苯基]丙烷酸酐等。 The aromatic tetracarboxylic acid is not particularly limited, and a pyromellinic acid residue (that is, a structure having a structure derived from pyromellitic acid) is preferred, and an acid anhydride thereof is more preferable. Examples of such an aromatic tetracarboxylic acid include pyromellitic dianhydride, 3,3',4,4'-biphenyltetracarboxylic dianhydride, and 4,4'-oxydiphthalic dianhydride. , 3,3',4,4'-benzophenonetetracarboxylic dianhydride, 3,3',4,4'-diphenylphosphonium tetracarboxylic dianhydride, 2,2-bis[4-( 3,4-Dicarboxyphenoxy)phenyl]propane anhydride or the like.

當重視耐熱性時,芳香族四羧酸類係例如以全四羧酸類之80質量%以上為較佳、更佳為90質量%以上、進一步更佳為95質量%以上。 When the heat resistance is emphasized, the aromatic tetracarboxylic acid is preferably 80% by mass or more, more preferably 90% by mass or more, and still more preferably 95% by mass or more, based on the total tetracarboxylic acid.

本發明之聚醯亞胺薄膜係以玻璃轉移溫度為250℃以上、較佳為300℃以上、進一步更佳為350℃以上,或者在500℃以下之區域中未觀測到玻璃轉移點為較佳。本發明之玻璃轉移溫度係藉由微差熱分析(DSC)所求得者。 The polyimine film of the present invention has a glass transition temperature of 250 ° C or higher, preferably 300 ° C or higher, more preferably 350 ° C or higher, or preferably no glass transition point is observed in a region of 500 ° C or lower. . The glass transition temperature of the present invention is determined by differential thermal analysis (DSC).

本發明之高分子薄膜的線膨脹係數(CTE)較佳為-5ppm/K~+20ppm/K、更佳為-5ppm/K~+15ppm/K、進一步更佳為1ppm/K~+10ppm/K。若CTE為前述範圍,則可將與一般支撐體之線膨脹係數的差保持在較小數值,即使供予加熱之製程亦可避免聚醯亞胺薄膜與由無機物所構成之支撐體剝離。 The linear expansion coefficient (CTE) of the polymer film of the present invention is preferably -5 ppm/K to +20 ppm/K, more preferably -5 ppm/K to +15 ppm/K, still more preferably 1 ppm/K to +10 ppm/ K. If the CTE is in the above range, the difference in linear expansion coefficient from the general support can be kept to a small value, and even if the heating is applied, the polyimide film can be prevented from peeling off from the support composed of the inorganic material.

本發明之高分子薄膜的破裂強度係60MPa以上、較佳為120MP以上、進一步更佳為240MPa以上。破裂強度的上限並未限制,而事實上為小於1000MPa左右。此外,在此,前述高分子薄膜的破裂強度係指高分子薄膜之縱向與橫向的平均值。 The polymer film of the present invention has a breaking strength of 60 MPa or more, preferably 120 MP or more, and more preferably 240 MPa or more. The upper limit of the burst strength is not limited, but is actually less than about 1000 MPa. Here, the breaking strength of the polymer film refers to the average value of the longitudinal direction and the transverse direction of the polymer film.

本發明之高分子薄膜與無機基板的接著強度必須為前述高分子薄膜的破裂強度之1/2以下。 The bonding strength between the polymer film of the present invention and the inorganic substrate must be 1/2 or less of the breaking strength of the polymer film.

假定在使用厚度10μm之薄膜的本發明之疊層體中,薄膜的接著強度為0.5N/cm。 It is assumed that in the laminate of the present invention using a film having a thickness of 10 μm, the film has a bonding strength of 0.5 N/cm.

施加於寬度10mm之薄膜的破裂力,係0.5N/(10μm×10mm)=0.5N/0.1mm2=5MPa。此時,若薄膜上有其10倍左右、即50MPa以上之破裂強度,則可在剝離薄膜時無阻礙地進行剝離操作。 The breaking force applied to the film having a width of 10 mm was 0.5 N / (10 μm × 10 mm) = 0.5 N / 0.1 mm 2 = 5 MPa. At this time, if the film has a fracture strength of about 10 times, that is, 50 MPa or more, the peeling operation can be performed without any hindrance when the film is peeled off.

該接著強度較佳為前述高分子薄膜的破裂強度之1/3以下、更佳為1/4以下。 The bonding strength is preferably 1/3 or less, more preferably 1/4 or less, of the breaking strength of the polymer film.

本發明之良好接著部分係指無機基板與聚醯亞胺薄膜之接著強度較強的部分,而本發明之易剝離部分係指無機基板與聚醯亞胺薄膜之接著強度較弱的部分。前述易剝離部分之接著強度係以良好接著部分之接著強度的1/2以下為較佳、更佳為1/3以下、進一步更佳為1/4以下。接著強度的下限值並未特別限制,而以前述良好接著部分為0.5N/cm以上、前述易剝離部分為0.01N/cm以上為較佳。 A good adhesive portion of the present invention refers to a portion having a stronger bonding strength between the inorganic substrate and the polyimide film, and the easily peelable portion of the present invention means a portion having a weaker bonding strength between the inorganic substrate and the polyimide film. The adhesion strength of the easily peelable portion is preferably 1/2 or less of the adhesion strength of the good adhesion portion, more preferably 1/3 or less, still more preferably 1/4 or less. The lower limit of the strength is not particularly limited, and is preferably 0.5 N/cm or more in the above-mentioned good adhesion portion and 0.01 N/cm or more in the above-mentioned easily peelable portion.

本發明之高分子薄膜之厚度不均係以20%以下為較佳、更佳為12%以下、進一步更佳為7%以下、特佳為4%以下。若厚度不均大於20%,則有 難以適用於狹小部之傾向。此外,薄膜之厚度不均可例如以接觸式膜厚計自被測定薄膜隨意抽出10點左右的位置來測定薄膜厚度,並且基於下式求得。 The thickness unevenness of the polymer film of the present invention is preferably 20% or less, more preferably 12% or less, still more preferably 7% or less, and particularly preferably 4% or less. If the thickness unevenness is greater than 20%, then there is It is difficult to apply to the tendency of the narrow part. Further, the thickness of the film may not be measured by, for example, a contact film thickness gauge from a position where the film to be measured is randomly drawn at about 10 o'clock, and the film thickness is measured, and is obtained based on the following formula.

薄膜之厚度不均(%)=100×(最大薄膜厚-最小薄膜厚)÷平均薄膜厚 Film thickness unevenness (%) = 100 × (maximum film thickness - minimum film thickness) ÷ average film thickness

本發明之高分子薄膜係以在其製造時捲繞成寬度300mm以上、長度10m以上之長形聚醯亞胺薄膜之形態下獲得者為較佳,而以在捲繞在捲繞芯成為輥狀聚醯亞胺薄膜之形態者為更佳。 The polymer film of the present invention is preferably obtained by winding into a long polyimine film having a width of 300 mm or more and a length of 10 m or more at the time of production, and is obtained by winding on a winding core into a roll. The form of the polyimine film is more preferred.

在高分子薄膜中,為了確保處理性及生產性,係以在薄膜中添加‧含有潤滑材料(粒子),而於高分子薄膜表面賦予細微的凹凸以確保滑動性為較佳。前述潤滑材料(粒子)較佳為由無機物所構成之微粒,可使用由金屬、金屬氧化物、金屬氮化物、金屬碳化物、金屬酸鹽、磷酸鹽、碳酸鹽、滑石、雲母、黏土、其它黏土礦物等所構成之粒子。較佳為氧化矽、磷酸鈣、磷酸氫鈣、磷酸二氫鈣、焦磷酸鈣、羥磷灰石(hydroxyapatite)、碳酸鈣、玻璃填料等金屬氧化物、磷酸鹽、碳酸鹽。潤滑材料可僅為1種,亦可為2種以上。 In the polymer film, in order to ensure handleability and productivity, it is preferable to add ‧ a lubricating material (particles) to the film to impart fine unevenness on the surface of the polymer film to ensure slidability. The lubricating material (particles) is preferably a fine particle composed of an inorganic material, and may be used of a metal, a metal oxide, a metal nitride, a metal carbide, a metal salt, a phosphate, a carbonate, a talc, a mica, a clay, or the like. Particles composed of clay minerals, etc. Preferred are metal oxides, phosphates, and carbonates such as cerium oxide, calcium phosphate, calcium hydrogen phosphate, calcium dihydrogen phosphate, calcium pyrophosphate, hydroxyapatite, calcium carbonate, and glass filler. The lubricating material may be used alone or in combination of two or more.

前述潤滑材料(粒子)之體積平均粒徑通常為0.001~10μm、較佳為0.03~2.5μm、更佳為0.05~0.7μm、進一步更佳為0.05~0.3μm。該體積平均粒徑係以光散射法所得之測定值為基準。若粒徑小於下限則高分子薄膜之工業性生產變得困難,又,若大於上限則表面的凹凸變得過大而貼附強度變弱,而有造成實用上之阻礙之虞。 The volume average particle diameter of the lubricating material (particles) is usually 0.001 to 10 μm, preferably 0.03 to 2.5 μm, more preferably 0.05 to 0.7 μm, still more preferably 0.05 to 0.3 μm. The volume average particle diameter is based on the measured value obtained by the light scattering method. When the particle diameter is less than the lower limit, the industrial production of the polymer film becomes difficult, and if it is larger than the upper limit, the unevenness of the surface becomes excessively large and the adhesion strength becomes weak, which may cause practical trouble.

前述潤滑材料之添加量,係以相對於高分子薄膜中之高分子成分的添加量而言為0.02~50質量%、較佳為0.04~3質量%、更佳為0.08~1.2質量%。若潤滑材料之添加量過少則難以期待潤滑材料的添加效果,有無法充分確保滑動性而造成高分子薄膜製造之阻礙之情形,若過多則薄膜的表面凹凸變得過大,而有導致即使確保滑動性亦會引起平滑性降低、引起高分 子薄膜之破裂強度或破裂伸長度降低、引起CTE上升等課題之情形。 The amount of the lubricating material to be added is 0.02 to 50% by mass, preferably 0.04 to 3% by mass, and more preferably 0.08 to 1.2% by mass, based on the amount of the polymer component in the polymer film. When the amount of the lubricating material added is too small, it is difficult to expect the effect of adding the lubricating material, and the slidability may not be sufficiently ensured, which may hinder the production of the polymer film. If the amount is too large, the surface unevenness of the film may become excessively large, and even if the sliding is ensured Sex also causes smoothness and high scores The problem that the fracture strength or the elongation at break of the sub-film is lowered, causing a rise in CTE or the like.

當在高分子薄膜添加‧含有潤滑材料(粒子)時,可作成潤滑材料均勻分散之單層高分子薄膜,而亦可作成例如其中一面由含有潤滑材料之高分子薄膜所構成,另一面由不含潤滑材料、或即使含有亦為少量的潤滑材料含量之高分子薄膜所構成之多層高分子薄膜。在這種多層高分子薄膜中,可在其中一層(薄膜)表面賦予細微的凹凸而利用該層(薄膜)確保滑動性,以確保良好的處理性和生產性。 When a polymer film is added and contains a lubricating material (particles), it can be used as a single-layer polymer film in which a lubricating material is uniformly dispersed, and it can also be formed, for example, in which one side is composed of a polymer film containing a lubricating material, and the other side is not A multilayer polymer film comprising a lubricating material or a polymer film containing a small amount of a lubricating material. In such a multilayer polymer film, fine unevenness can be imparted to the surface of one of the layers (film), and the layer (film) can be used to ensure slidability to ensure good handleability and productivity.

當多層高分子薄膜係以熔融延伸製膜法所製造之薄膜時,例如可藉由首先使用不含潤滑材料之高分子薄膜原料來進行薄膜化,在該步驟途中至少於薄膜的一面塗佈含有潤滑材料之樹脂層而得到。當然亦可相反地,使用含有潤滑材料之高分子薄膜原料來進行薄膜化,在該步驟途中、或完成薄膜化之後,塗佈不含潤滑材料之高分子薄膜原料而得到薄膜。 When the multilayer polymer film is a film produced by a melt-stretch film forming method, for example, it can be formed by first using a polymer film material containing no lubricating material, and at least one side of the film is coated in the middle of the step. It is obtained by lubricating the resin layer of the material. Alternatively, conversely, a thin film of a polymer film material containing a lubricating material may be used, and in the middle of the step or after the film formation, the polymer film material containing no lubricating material may be applied to obtain a film.

如聚醯亞胺薄膜般採用溶液製膜法所得之高分子薄膜的情形也一樣,例如作為聚醯胺酸溶液(聚醯亞胺的前驅物溶液),可使用相對於聚醯胺酸溶液中之高分子固體成分,含有潤滑材料(較佳為平均粒徑0.05~2.5μm左右)0.02質量%~50質量%(較佳為0.04~3質量%、更佳為0.08~1.2質量%)之聚醯胺酸溶液,與不含潤滑材料或其含量為少量(較佳為相對於聚醯胺酸溶液中之高分子固體成分為小於0.02質量%、更佳為小於0.01質量%)之2種聚醯胺酸溶液來製造。 The same applies to the polymer film obtained by the solution film forming method, such as a polyimide film, for example, as a polyaminic acid solution (precursor solution of polyimine), which can be used in a polyamic acid solution. The polymer solid component contains a lubricating material (preferably having an average particle diameter of about 0.05 to 2.5 μm) of 0.02% by mass to 50% by mass (preferably 0.04 to 3% by mass, more preferably 0.08 to 1.2% by mass). The proline acid solution and the non-lubricating material or a small amount thereof (preferably less than 0.02% by mass, more preferably less than 0.01% by mass relative to the polymer solid content in the polyaminic acid solution) Manufactured by a proline solution.

多層高分子薄膜之多層化(積層)方法只要兩層的密合不產生問題,則無特別限定,並且只要是未隔著接著劑層等而密合者即可。 The method of laminating (layering) the multilayer polymer film is not particularly limited as long as the adhesion between the two layers is not problematic, and it is only required to be adhered without interposing an adhesive layer or the like.

聚醯亞胺薄膜之情形,例如可例示i)在製作其中一種聚醯亞胺薄膜後,在該聚醯亞胺薄膜上連續地塗佈另一種聚醯胺酸溶液而醯亞胺化之方法;ii)在流延其中一種聚醯胺酸溶液以製作聚醯胺酸薄膜後,在該聚醯胺酸薄膜上連續地塗佈另一種聚醯胺酸溶液後,進行醯亞胺化之方法;iii)藉由共擠製之方法;iv)在以不含潤滑材料或其含量為少量之聚醯胺酸溶液所形成之薄膜上,利用噴塗、T模塗佈等來塗佈含有大量潤滑材料之聚醯胺酸溶液而 醯亞胺化之方法等。本發明係以採用上述i)或上述ii)之方法為較佳。 In the case of a polyimide film, for example, i) a method in which another polyaminic acid solution is continuously coated on the polyimide film after the preparation of one of the polyimide films, and the imidization is carried out ; ii) after casting one of the polyaminic acid solutions to form a poly-proline film, after continuously coating another poly-proline solution on the poly-proline film, the method of imidization ; iii) by co-extrusion method; iv) coating on a film formed of a polyamic acid solution containing no lubricating material or a small amount thereof, by spraying, T-die coating or the like to coat a large amount of lubrication a polylysine solution of the material The method of imidization and the like. The present invention is preferably a method using the above i) or the above ii).

多層高分子薄膜中各層之厚度的比率並未特別限定,而若將大量含有潤滑材料之高分子層設為(a)層、將不含潤滑材料或其含量為少量之高分子層設為(b)層,則(a)層/(b)層係以0.05~0.95為較佳。若(a)層/(b)層大於0.95則極易失去(b)層之平滑性,另一方面,當小於0.05時,則有表面特性的改良效果不足而失去易滑性之情形。 The ratio of the thickness of each layer in the multilayer polymer film is not particularly limited, and a polymer layer containing a large amount of a lubricating material is (a) layer, and a polymer layer containing no lubricating material or a small amount thereof is used as ( b) layer, then (a) layer / (b) layer is preferably 0.05 ~ 0.95. If the layer (a)/(b) is larger than 0.95, the smoothness of the layer (b) is easily lost. On the other hand, when it is less than 0.05, the effect of improving the surface characteristics is insufficient and the slipperiness is lost.

<高分子薄膜之表面活性化處理> <Surface activation treatment of polymer film>

對於本發明所用之高分子薄膜宜進行表面活性化處理為較佳。藉由該表面活性化處理,高分子薄膜表面改質為存在官能基之狀態(即活性化之狀態),對無機基板之接著性提升。 It is preferred that the polymer film used in the present invention is surface-activated. By the surface activation treatment, the surface of the polymer film is modified to a state in which a functional group is present (that is, in a state of being activated), and the adhesion to the inorganic substrate is improved.

本發明之表面活性化處理係指乾式或濕式的表面處理。作為本發明之乾式處理,可採用在表面照射紫外線、電子束、X射線等活性能量射線之處理、電暈處理、真空電漿處理、常壓電漿處理、火燄處理、ITRO處理等。以濕式處理而言,可例示使薄膜表面接觸酸或鹼溶液之處理。本發明中適合使用的表面活性化處理係電漿處理,且為電漿處理與濕式之酸處理之組合。 The surface activation treatment of the present invention refers to a dry or wet surface treatment. As the dry treatment of the present invention, treatment of active energy rays such as ultraviolet rays, electron beams, and X-rays, corona treatment, vacuum plasma treatment, normal piezoelectric slurry treatment, flame treatment, and ITRO treatment may be employed. In the case of wet treatment, a treatment of bringing the surface of the film into contact with an acid or alkali solution can be exemplified. The surface activation treatment which is suitably used in the present invention is a plasma treatment and is a combination of a plasma treatment and a wet acid treatment.

電漿處理並未特別限定,有在真空中之RF電漿處理、微波電漿處理、微波ECR電漿處理、大氣壓電漿處理、電暈處理等,亦包含含氟氣體處理、使用離子源之離子注入處理、使用PBII法之處理、暴露於熱電漿之火燄處理、ITRO處理等。此等之中又以在真空中之RF電漿處理、微波電漿處理、大氣壓電漿處理為較佳。 The plasma treatment is not particularly limited, and there are RF plasma treatment, microwave plasma treatment, microwave ECR plasma treatment, atmospheric piezoelectric slurry treatment, corona treatment, etc. in a vacuum, and also includes fluorine gas treatment, using an ion source. Ion implantation treatment, treatment using PBII method, flame treatment exposed to hot plasma, ITRO treatment, and the like. Among them, RF plasma treatment, microwave plasma treatment, and atmospheric piezoelectric slurry treatment in a vacuum are preferred.

作為電漿處理之適當條件,係以氧氣電漿、CF4、C2F6等含氟電漿等已知化學蝕刻效果高的電漿、或如Ar電漿將物理能量賦予高分子表面而物理蝕刻之效果高的電漿所進行之處理為較佳。又,附加CO2、H2、N2等電漿及此等之混合氣體,或進一步附加水蒸氣者亦較佳。當以短時間之處理為目標時,以電漿的能量密度高、電漿中的離子所具有之運動能量高者,活 性物質之數量密度高之電漿為較佳。從該觀點來看,微波電漿處理、微波ECR電漿處理、易於注入高能量離子之離子源所致之電漿照射、PBII法等亦為較佳。 As a suitable condition for the plasma treatment, a plasma having a high chemical etching effect such as a fluorine plasma such as oxygen plasma, CF 4 or C 2 F 6 or a plasma having a high chemical etching effect or an Ar plasma is applied to the surface of the polymer. The treatment by the plasma having a high physical etching effect is preferred. Further, it is also preferable to add a plasma such as CO 2 , H 2 or N 2 or a mixed gas thereof or to further add water vapor. When the treatment for a short period of time is aimed at, the plasma having a high energy density of plasma and having high kinetic energy of ions in the plasma is preferable because the plasma having a high density of the active material is preferable. From this point of view, microwave plasma treatment, microwave ECR plasma treatment, plasma irradiation by ion source that is easy to inject high-energy ions, PBII method, and the like are also preferable.

該表面活性化處理係清淨化高分子表面,進一步生成活性的官能基。生成之官能基係與偶合劑層藉由氫鍵或化學反應結合,而可使高分子薄膜層與偶合劑層牢固地接著。 This surface activation treatment purifies the surface of the polymer to further form an active functional group. The resulting functional group and the coupling agent layer are bonded by hydrogen bonding or chemical reaction, and the polymer film layer and the coupling agent layer can be firmly adhered.

電漿處理亦可得到蝕刻高分子薄膜表面之效果。尤其在包含較多潤滑材料粒子之高分子薄膜中,潤滑材料所致的突起有時會阻礙薄膜與無機基板之接著。此時,若藉由電漿處理而薄薄地蝕刻高分子薄膜表面,使潤滑材料粒子的一部分露出而進一步以氟酸進行處理,則可去除薄膜表面附近的潤滑材料粒子。 The plasma treatment also has the effect of etching the surface of the polymer film. In particular, in a polymer film containing a large amount of lubricating material particles, protrusions caused by the lubricating material may hinder the adhesion of the film to the inorganic substrate. At this time, if the surface of the polymer film is thinly etched by the plasma treatment, a part of the lubricant particles is exposed and further treated with hydrofluoric acid, the lubricant particles in the vicinity of the surface of the film can be removed.

表面活性化處理可僅施加於高分子薄膜的單面,而亦可施加於兩面。在單面進行電漿處理之情形,可藉由以利用平行平板型電極之電漿處理將高分子薄膜接觸並設置在單側的電極上,而僅對於高分子薄膜之未與電極連接之側的一面施加電漿處理。又,若在2片電極間之空間以電性浮起的狀態設置高分子薄膜,則可在兩面進行電漿處理。又,可藉由在高分子薄膜的單面貼有保護薄膜之狀態下進行電漿處理而完成單面處理。此外,作為保護薄膜,可使用附有黏著劑之PET薄膜或烯烴薄膜等。 The surface activation treatment may be applied to only one side of the polymer film, or may be applied to both sides. In the case of performing plasma treatment on one side, the polymer film may be contacted and disposed on one side of the electrode by plasma treatment using a parallel plate type electrode, and only for the side of the polymer film not connected to the electrode One side is applied with a plasma treatment. Further, when the polymer film is provided in a state in which the space between the two electrodes is electrically floated, the plasma treatment can be performed on both surfaces. Further, the single-sided treatment can be completed by performing plasma treatment in a state in which a protective film is attached to one surface of the polymer film. Further, as the protective film, a PET film or an olefin film to which an adhesive is attached can be used.

<薄膜側之圖案化處理> <Patterning processing on the film side>

在本發明中,可在高分子薄膜側進行圖案化處理。在此,圖案化係指有意地製作操作表面活性化處理之活性度等之區域。藉此,疊層體具有無機基板與高分子薄膜之間的接著強度相異之良好接著部分與易剝離部分,且該良好接著部分與該易剝離部分可形成規定的圖案。作為圖案化處理,可例示在進行表面活性化處理時,使用事先以規定的圖案準備之光罩,而操作表面活性化處理量之方法。又,在進行表面活性化處理時,亦可藉由併用遮蔽或掃描操作等手法來進行圖案化。亦可在表面活性化後之高分子薄膜表面,進一步進行併用遮蔽或掃描其它活性能量射線處理,而實現活 性度的強弱。在此,活性能量射線照射係指照射紫外線、電子束、X射線等能量射線之操作,進一步包含兼具如極短波長之紫外線照射處理般的紫外線照射光效果、與同時在照射面附近所發生之臭氧氣體暴露效果者。再者,此等以外,亦可藉由電暈處理、真空電漿處理、常壓電漿處理、噴砂處理等來進行圖案化處理。 In the present invention, the patterning treatment can be performed on the polymer film side. Here, the patterning means an area in which the degree of activity of the surface activation treatment or the like is intentionally produced. Thereby, the laminate has a good adhesion portion and an easily peelable portion in which the bonding strength between the inorganic substrate and the polymer film is different, and the good adhesion portion and the easily peelable portion can form a predetermined pattern. As the patterning treatment, a method of operating the surface activation treatment amount by using a mask prepared in a predetermined pattern in advance when performing the surface activation treatment can be exemplified. Further, when the surface activation treatment is performed, patterning may be performed by a method such as masking or scanning operation. It can also be further processed by masking or scanning other active energy ray on the surface of the surface of the polymer film after activation. The strength of sexuality. Here, the active energy ray irradiation refers to an operation of irradiating an energy ray such as an ultraviolet ray, an electron beam, or an X-ray, and further includes an ultraviolet ray irradiation effect such as an ultraviolet ray irradiation treatment of a very short wavelength, and occurs in the vicinity of the irradiation surface at the same time. The ozone gas exposure effect. Further, in addition to these, patterning treatment may be performed by corona treatment, vacuum plasma treatment, normal piezoelectric slurry treatment, sandblasting treatment, or the like.

<薄膜疊層方法> <Film lamination method>

本發明係採用以規定的圖案形成矽烷偶合劑層薄膜之無機基板作為暫時支撐體,藉由隔著矽烷偶合劑層貼合或乾燥製膜高分子薄膜而得到疊層體。在貼合高分子薄膜之情形,藉由在形成矽烷偶合劑層之暫時支撐用無機基板重疊高分子薄膜並加熱‧加壓活性化面而得到疊層體。 In the present invention, an inorganic substrate in which a decane coupling agent layer film is formed in a predetermined pattern is used as a temporary support, and a laminate is obtained by laminating or drying a film-forming polymer film through a decane coupling agent layer. In the case of bonding a polymer film, a laminate is obtained by laminating a polymer film on a temporary supporting inorganic substrate on which a decane coupling agent layer is formed and heating the pressure-activated surface.

加壓‧加熱處理係例如在大氣壓環境下或真空中,一邊加熱一邊進行加壓、層合、輥層合等即可。又,亦可應用在放入可撓性的袋子之狀態下進行加壓加熱之方法。從提高生產性、或高生產性所帶來的低加工成本化之觀點來看,係以在大氣環境下之加壓或輥層合為較佳,尤其以使用輥來進行之方法(輥層合等)為較佳。 The pressurization and the heat treatment may be carried out by pressurization, lamination, roll lamination, or the like while heating, for example, under an atmospheric pressure atmosphere or in a vacuum. Further, a method of applying pressure heating in a state in which a flexible bag is placed may be applied. From the viewpoint of improving productivity and high productivity due to low productivity, it is preferred to pressurize or roll laminate in an atmospheric environment, especially by using a roll (roller layer). Combination) is preferred.

作為加壓加熱處理時之壓力,係以1MPa~20MPa為較佳、進一步更佳為3MPa~10MPa。若壓力過高,則有支撐體破損之虞;若壓力過低,則有產生未密合之部分,接著變得不充分之情形。作為加壓加熱處理時之溫度,係在未超過所用之高分子薄膜的耐熱溫度之範圍進行。非熱塑性之聚醯亞胺薄膜的情形係以在150℃~400℃、進一步更佳為在250℃~350℃處理為較佳。 The pressure at the time of the pressure heat treatment is preferably 1 MPa to 20 MPa, and more preferably 3 MPa to 10 MPa. If the pressure is too high, there is a problem that the support body is broken; if the pressure is too low, there is a case where an unadhesive portion is generated and then becomes insufficient. The temperature at the time of the pressure heat treatment is carried out in a range not exceeding the heat resistant temperature of the polymer film to be used. The non-thermoplastic polyimide film is preferably treated at 150 ° C to 400 ° C, more preferably at 250 ° C to 350 ° C.

又,加壓加熱處理亦可如上述般在大氣壓環境中進行,而為了得到全面的安定接著強度,係以在真空下進行為較佳。此時,真空度係以一般的油旋轉式幫浦所產生的真空度即充分,只要為10Torr以下左右即充分。 Further, the pressure heat treatment may be carried out in an atmospheric pressure atmosphere as described above, and it is preferred to carry out the vacuum under pressure in order to obtain a comprehensive stability. In this case, the degree of vacuum generated by the general oil rotary pump is sufficient for the degree of vacuum, and it is sufficient as long as it is about 10 Torr or less.

作為可使用於加壓加熱處理之裝置,進行在真空中之加壓例如可使用井元製作所製的「11FD」等;進行在真空中藉由輥式薄膜層合機或在作成真空後藉由薄橡膠膜在玻璃全面一口氣施加壓力之薄膜層合機等真空層合,例如可使用名機製作所製的「MVLP」等。 As a device which can be used for the pressurization and heat treatment, for example, "11FD" manufactured by a well element can be used for pressurization in a vacuum, or by thin film laminator in a vacuum or after being vacuumed. The rubber film is vacuum laminated such as a film laminator that applies pressure to the glass in one go, and for example, "MVLP" manufactured by a famous machine can be used.

前述加壓加熱處理可分離為加壓製程與加熱製程來進行。此時,首先以較低溫(例如小於120℃、更佳為95℃以下之溫度)加壓高分子薄膜與無機基板(較佳為0.2~50MPa左右)以確保兩者的密合,此後,在低壓(較佳為小於0.2MPa、更佳為0.1MPa以下)或常壓下以較高溫(例如120℃以上、更佳為120~250℃、進一步更佳為150~230℃)加熱,藉此可促進密合界面的化學反應而將高分子薄膜與暫時支撐用無機基板疊層。 The aforementioned pressurized heat treatment can be carried out by separating into a pressurization process and a heating process. In this case, first, the polymer film and the inorganic substrate (preferably about 0.2 to 50 MPa) are pressed at a relatively low temperature (for example, a temperature of less than 120 ° C, more preferably 95 ° C or less) to ensure adhesion between the two, and thereafter, Heating at a low pressure (preferably less than 0.2 MPa, more preferably 0.1 MPa or less) or at a relatively high temperature (for example, 120 ° C or higher, more preferably 120 to 250 ° C, still more preferably 150 to 230 ° C) The chemical reaction of the adhesion interface can be promoted to laminate the polymer film with the inorganic substrate for temporary support.

<利用溶液塗佈‧乾燥形成高分子薄膜層> <Using solution coating ‧ drying to form a polymer film layer>

作為本發明之疊層體之製造方法,可在形成矽烷偶合劑層之無機基板上,藉由塗佈高分子之溶液或高分子前驅物溶液並乾燥‧製膜而形成高分子薄膜層。作為溶液的塗佈方法,可採用浸塗、旋塗、簾塗、狹縫鑄模塗佈等周知的手法。 As a method for producing a laminate of the present invention, a polymer film layer can be formed by coating a polymer solution or a polymer precursor solution on a inorganic substrate on which a decane coupling agent layer is formed and drying the film. As a coating method of the solution, a well-known method such as dip coating, spin coating, curtain coating, or slit casting coating can be employed.

在聚醯亞胺系之樹脂中,將聚醯亞胺樹脂之原料的二胺類與四羧酸或其酸酐於溶液中聚縮合所得之聚醯胺酸溶液,以成為規定的厚度之方式塗佈於本發明之暫時支撐用無機基板,並且進行乾燥、熱處理或化學醯亞胺化處理,而在暫時支撐用無機基板上形成聚醯亞胺膜。此時,較佳的膜厚為7~100μm、更佳為15~80μm、進一步更佳為23~45μm之範圍。 In the polyimide-based resin, a polyamine liquid solution obtained by polycondensing a diamine of a raw material of a polyimide resin with a tetracarboxylic acid or an anhydride thereof in a solution is applied in a predetermined thickness. The inorganic substrate for temporary support of the present invention is subjected to drying, heat treatment or chemical imidization treatment to form a polyimide film on the temporary support inorganic substrate. In this case, a preferable film thickness is in the range of 7 to 100 μm, more preferably 15 to 80 μm, still more preferably 23 to 45 μm.

通常,以這種手法所得之聚醯亞胺樹脂層較脆弱,在剝離途中發生撕裂的情形並不少,而多有難以從無機基板剝離之情形,然而在本發明中,由於存在於矽烷偶合劑層之異物或凝集物少,因此不易發生基於該缺點的薄膜撕裂,結果大幅改善剝離時之產率。 In general, the polyimine resin layer obtained by such a method is relatively fragile, and tearing occurs in the middle of peeling, and there are many cases where it is difficult to peel off from the inorganic substrate. However, in the present invention, it is present in decane. Since the coupling agent layer has a small amount of foreign matter or agglomerates, film tearing based on the disadvantage is less likely to occur, and as a result, the yield at the time of peeling is greatly improved.

<可撓性電子元件之製造方法> <Method of Manufacturing Flexible Electronic Component>

若使用本發明之疊層體,則可利用既有的電子元件製造用設備、製程而在疊層體的高分子薄膜上形成電子元件,並且藉由自疊層體連同高分子薄膜剝離,可以製作可撓性的電子元件。 When the laminate of the present invention is used, an electronic component can be formed on the polymer film of the laminate by using an existing device for manufacturing an electronic component, and the process can be separated from the laminate by the polymer film. Create flexible electronic components.

本發明之電子元件係指包含載持電氣線路之配線基板、電晶體、二極體等主動元件、電阻、電容、電感等被動元件之電子電路,另外還有感測壓力、溫度、光、濕度等之感測元件、發光元件、液晶顯示、電泳顯示、 自發光顯示等影像顯示元件、無線、有線之通訊元件、運算元件、記憶元件、MEMS元件、太陽能電池、薄膜電晶體等。 The electronic component of the present invention refers to an electronic circuit including a wiring board carrying an electric circuit, an active component such as a transistor or a diode, a passive component such as a resistor, a capacitor, an inductor, and the like, and sensing a pressure, a temperature, a light, and a humidity. Such as sensing elements, light-emitting elements, liquid crystal display, electrophoretic display, Image display elements such as self-luminous display, wireless, wired communication elements, arithmetic elements, memory elements, MEMS elements, solar cells, thin film transistors, and the like.

作為從疊層體剝離高分子薄膜之方法,可例示從無機基板側照射強光,使無機基板與高分子薄膜間之接著部位熱分解或光分解而剝離之方法;事先減弱接著強度,以小於高分子薄膜之彈性強度極限值的力量剝除高分子薄膜之方法;暴露於加熱水、加熱蒸氣等,減弱無機基板與高分子薄膜界面之結合強度而使其剝離之方法等。 As a method of peeling a polymer film from a laminated body, the method of irradiating a strong light from an inorganic substrate side and thermally-decomposing or photo-decomposing the junction between an inorganic substrate and a polymer film, and the peeling- A method of removing a polymer film by a force of a limit value of an elastic strength of a polymer film; a method of exposing the bonding strength between an inorganic substrate and a polymer film to be peeled off by exposure to heated water, heating of a vapor, or the like.

在本發明中,當在無機基板側或高分子薄膜側、甚至在兩側進行圖案化處理時,在藉由圖案化處理而降低高分子薄膜與無機基板之接著力的區域(稱為易剝離部)形成電子元件,其次,在該區域的外圍部作出切口,將形成有高分子薄膜之電子元件的區域從無機基板剝離,藉此可得到可撓性電子元件。藉由該方法,高分子薄膜與無機基板的剝離變得更容易。 In the present invention, when patterning is performed on the side of the inorganic substrate or the side of the polymer film or even on both sides, the area where the adhesion between the polymer film and the inorganic substrate is lowered by the patterning process (referred to as easy peeling) The electronic component is formed. Next, a slit is formed in the peripheral portion of the region, and a region in which the electronic component of the polymer film is formed is peeled off from the inorganic substrate, whereby a flexible electronic component can be obtained. By this method, peeling of a polymer film and an inorganic substrate becomes easier.

以沿著疊層體之易剝離部的外圍在高分子薄膜作出切口的方法,可採用藉由刀具等切削工具而切斷高分子薄膜之方法;藉由使雷射與疊層體相對向地掃描而切斷高分子薄膜之方法;藉由使水刀與疊層體相對向地掃描而切斷高分子薄膜之方法;藉由半導體晶片之切割裝置切入至部分玻璃層而切斷高分子薄膜之方法等。又,亦可適宜地採用此等方法之組合;或於切削工具重疊超音波,增加來回動作或上下動作等而提升切削性能等之手法。 A method of cutting a polymer film along a periphery of an easily peelable portion of the laminate, and cutting the polymer film by a cutting tool such as a cutter; by using the laser to face the laminate a method of cutting a polymer film by scanning; a method of cutting a polymer film by scanning a water jet and a laminate; and cutting a polymer film by cutting a semiconductor wafer into a portion of the glass layer Method and so on. Further, a combination of these methods may be suitably employed; or a method in which the cutting tool overlaps the ultrasonic wave and increases the cutting performance by increasing the back and forth motion or the up and down motion.

當在疊層體之易剝離部外圍的高分子薄膜作出切口時,只要切入切口的位置至少包含易剝離部的一部分即可,基本上根據規定的圖案來切斷即可,而依據誤差的吸收、生產性的觀點等作適宜判斷即可。 When a slit is formed in the polymer film on the periphery of the easily peelable portion of the laminate, the position at which the slit is cut may include at least a part of the easily peelable portion, and may be cut according to a predetermined pattern, and may be absorbed according to an error. The production viewpoint can be judged appropriately.

作為將高分子薄膜從支撐體剝離之方法,並無特別限制,可採用利用鑷子等自邊緣捲起之方法;在附有元件之高分子薄膜的切口部分之1邊貼合黏著膠帶後,從該膠帶部分捲起之方法;真空吸附附有元件之高分子薄膜的切口部分之1邊後,自該部分捲起之方法等。此外,在剝離時,若在 附有元件之高分子薄膜的切口部分產生曲率小的彎曲,則有對該部分之元件施加應力而破壞元件之虞,因此係以在曲率儘可能大的狀態下剝除為較佳。例如一邊捲繞在大曲率的輥一邊捲起,或者使用如曲率大的輥會位於剝離部分之構成的機械來捲起為較佳。 The method of peeling the polymer film from the support is not particularly limited, and a method of winding up from the edge by a tweezers or the like may be employed. After the adhesive tape is attached to one side of the slit portion of the polymer film with the element, A method of partially rolling up the tape; a method of vacuum-adsorbing one side of the slit portion of the polymer film to which the element is attached, and rolling up from the portion. In addition, when peeling off, if When the slit portion of the polymer film with the element is bent to have a small curvature, stress is applied to the element of the portion to break the element, and therefore it is preferable to remove it with the curvature as large as possible. For example, it is preferable to wind up while winding on a roll having a large curvature, or to wind up a machine in which a roller having a large curvature is located in a peeling portion.

又,剝離之部分事先貼附於其它補強基材,連同補強基材剝離之方法亦為有用。當剝離之可撓性電子元件為顯示元件之底板時,亦可事先貼附顯示元件之前板,在無機基板上一體化後同時剝除兩者,得到可撓性的顯示元件。 Further, it is also useful that the peeled portion is attached to other reinforcing substrates in advance, together with the method of peeling the reinforcing substrate. When the peeled flexible electronic component is the bottom plate of the display element, the front plate of the display element may be attached in advance, and after being integrated on the inorganic substrate, both are peeled off to obtain a flexible display element.

<無機基板之再生> <Regeneration of inorganic substrate>

在本發明中,藉由自剝離目標的電子元件後之支撐基板完全去除殘存的高分子薄膜,並且進行簡易的洗淨處理等,而可再利用無機基板。以往藉由液狀塗佈而形成矽烷偶合劑層之情形,由於矽烷偶合劑之凝集物或其它異物之附著,在高分子薄膜剝離後的無機基板表面,存在有凹凸或矽烷偶合劑層之厚度不均等,為了再利用而必須研磨無機基板表面層以確保平面。根據本發明之塗佈法,高分子薄膜剝離後的無機基板表面之外觀品質良好而不需要再研磨。 In the present invention, the inorganic substrate can be reused by completely removing the remaining polymer film from the support substrate after the target electronic component is removed, and performing a simple cleaning treatment or the like. In the case where a decane coupling agent layer is formed by liquid coating, the thickness of the uneven or decane coupling agent layer exists on the surface of the inorganic substrate after the polymer film is peeled off due to the adhesion of the argon coupling agent or other foreign matter. Inequality, the surface layer of the inorganic substrate must be ground for reuse to ensure a flat surface. According to the coating method of the present invention, the surface quality of the surface of the inorganic substrate after the peeling of the polymer film is good without re-grinding.

[實施例] [Examples]

以下顯示實施例及比較例以更具體地說明本發明,惟本發明並不限於以下的實施例。此外,以下的實施例之物性評價方法如下述。 The present invention will be more specifically illustrated by the following examples and comparative examples, but the present invention is not limited to the following examples. Further, the physical property evaluation methods of the following examples are as follows.

<聚醯胺酸溶液之還原黏度> <Reductive viscosity of poly-proline solution>

針對以高分子濃度成為0.2g/dl的方式溶解於N,N-二甲基乙醯胺之溶液,使用烏別洛特型的黏度管於30℃測定。 A solution of N,N-dimethylacetamide dissolved in a polymer concentration of 0.2 g/dl was measured at 30 ° C using a Ubbelt type viscosity tube.

<高分子薄膜之厚度> <thickness of polymer film>

高分子薄膜之厚度係採用測微計(Feinpruf公司製「Millitron 1245D」)來測定。 The thickness of the polymer film was measured using a micrometer ("Millitron 1245D" manufactured by Feinpruf Co., Ltd.).

<高分子薄膜之厚度不均> <The thickness of the polymer film is uneven>

高分子薄膜之厚度不均係採用測微計(Feinpruf公司製「Millitron 1245D」),從被測定薄膜隨機抽出10點來測定薄膜厚度,由所得之10個值的最大值(最大薄膜厚度)、最小值(最小薄膜厚度)、及平均值(平均薄膜厚度),基於下式算出。 The thickness unevenness of the polymer film was measured by a micrometer ("Millitron 1245D" manufactured by Feinpruf Co., Ltd.), and the thickness of the film was measured by randomly extracting 10 points from the film to be measured, and the maximum value (maximum film thickness) of the obtained 10 values, The minimum value (minimum film thickness) and the average value (average film thickness) were calculated based on the following formula.

薄膜之厚度不均(%)=100×(最大薄膜厚-最小薄膜厚)÷平均薄膜厚 Film thickness unevenness (%) = 100 × (maximum film thickness - minimum film thickness) ÷ average film thickness

<高分子薄膜之拉伸彈性係數、拉伸強度及拉伸破裂伸長度> <Tensile modulus, tensile strength and tensile elongation at break of polymer film>

自測定對象之高分子薄膜切出流動方向(MD方向)及寬度方向(TD方向)分別為100mm×10mm之長條形的試驗片,採用拉伸試驗機(島津製作所公司製「Autograph(註冊商標);機種名AG-5000A」),在拉伸速度50mm/分、夾具間距離40mm之條件下,分別針對MD方向、TD方向測定拉伸彈性係數、拉伸強度及拉伸破裂伸長度。 A test piece of a strip shape in which the flow direction (MD direction) and the width direction (TD direction) of the measurement target were 100 mm × 10 mm, respectively, and a tensile tester ("Autograph (registered trademark) manufactured by Shimadzu Corporation) was used. ); the model name AG-5000A"), the tensile modulus, the tensile strength, and the tensile elongation at break were measured for the MD direction and the TD direction under the conditions of a tensile speed of 50 mm/min and a distance between the clamps of 40 mm.

<高分子薄膜之線膨脹係數(CTE)> <Linear expansion coefficient (CTE) of polymer film>

針對測定對象之高分子薄膜的流動方向(MD方向)及寬度方向(TD方向),在下述條件下測定伸縮率,測定15℃間隔(30℃~45℃、45℃~60℃、...)之伸縮率/溫度,進行該測定直到300℃,算出MD方向及TD方向所測定之全部測定值的平均值作為線膨脹係數(CTE)。 The expansion ratio of the polymer film to be measured in the flow direction (MD direction) and the width direction (TD direction) was measured under the following conditions, and the interval of 15 ° C was measured (30 ° C to 45 ° C, 45 ° C to 60 ° C, ... The expansion ratio/temperature of the measurement was performed until 300 ° C, and the average value of all the measured values measured in the MD direction and the TD direction was calculated as the linear expansion coefficient (CTE).

機器名:MAC Science公司製「TMA4000S」 Machine name: "TMA4000S" made by MAC Science

試料長度:20mm Sample length: 20mm

試料寬度:2mm Sample width: 2mm

升溫開始溫度:25℃ Heating start temperature: 25 ° C

升溫結束溫度:400℃ Temperature rise temperature: 400 ° C

升溫速度:5℃/分 Heating rate: 5 ° C / min

氣體環境:氬氣 Gas environment: argon

初始荷重:34.5g/mm2 Initial load: 34.5g/mm 2

<玻璃轉移溫度> <glass transition temperature>

使用DSC微差熱分析裝置,從自室溫至500℃為止之範圍的起因於結 構變化之吸放熱的有無,求出高分子薄膜之玻璃轉移溫度。 Using a DSC differential thermal analysis device, the range from room temperature to 500 ° C is caused by the knot The presence or absence of the absorption and exothermic change of the structure changes the glass transition temperature of the polymer film.

<高分子薄膜之評價:滑動性> <Evaluation of polymer film: slidability>

將2片高分子薄膜以不同的面彼此重合(即,非相同的面,而是捲成薄膜捲時的捲繞外側面與捲繞內側面重合),以拇指與食指夾起重合之聚醯亞胺薄膜並且輕輕折合時,將高分子薄膜與高分子薄膜滑動的情形評價為「○」或「良好」,將不會滑動的情形評價為「×」或「不良」。此外,雖然亦有捲繞外側面與捲繞外側面、或捲繞內側面與捲繞內側面不會滑動之情形,其並不作為評價項目。 The two polymer films are superposed on each other with different faces (ie, the non-identical faces, but the wound outer side when the film roll is wound and the inner side of the winding), and the overlapping of the thumb and the index finger When the imine film was lightly folded, the case where the polymer film and the polymer film were slid was evaluated as "○" or "good", and the case where the film was not slipped was evaluated as "x" or "poor". Further, although the outer side surface of the winding and the outer side surface of the winding, or the inner side surface of the winding and the inner side surface of the winding do not slide, it is not an evaluation item.

<偶合劑層之厚度> <thickness of coupler layer>

偶合劑層(SC層)之厚度(nm)係在另外洗淨的Si晶圓上以與各實施例、比較例同樣的方法製作塗佈乾燥偶合劑所得之樣品,關於形成在該Si晶圓上之偶合劑層的膜厚,係以橢圓偏振法,利用分光橢圓偏光計(Photal公司製「FE-5000」)在下述條件下測定。 The thickness (nm) of the coupling agent layer (SC layer) was prepared by applying a dry coupling agent to the separately cleaned Si wafer in the same manner as in each of the examples and the comparative examples, and the Si wafer was formed on the Si wafer. The film thickness of the upper coupling agent layer was measured by an ellipsometry method using a spectroscopic ellipsometer ("FE-5000" manufactured by Photal Co., Ltd.) under the following conditions.

反射角度範圍:45°~80° Reflecting angle range: 45°~80°

波長範圍:250nm~800nm Wavelength range: 250nm~800nm

波長分解能量:1.25nm Wavelength decomposition energy: 1.25nm

圓點直徑:1mm Dot diameter: 1mm

tanΨ:測定精度±0.01 TanΨ: measurement accuracy ±0.01

cos△:測定精度±0.01 Cos△: Measurement accuracy ±0.01

測定方式:旋轉檢偏鏡法 Measuring method: rotary analyzer

偏光鏡角度:45° Polarizer angle: 45°

入射角度:70°固定 Incidence angle: fixed at 70°

檢偏鏡:每隔11.25°,檢測0~360° Polarization mirror: 0~360° every 11.25°

波長:250nm~800nm Wavelength: 250nm~800nm

利用非線性最小平方法之擬合(fitting)算出膜厚。此時係以Air/薄膜/Si之模型作為模型,以下式求出波長關連性C1~C6。 The film thickness was calculated by fitting with a nonlinear least squares method. At this time, the model of Air/film/Si was used as a model, and the wavelength correlation C1 to C6 was obtained by the following equation.

n=C3/λ4+C2/λ2+C1 n=C3/λ4+C2/λ2+C1

k=C6/λ4+C5/λ2+C4 k=C6/λ4+C5/λ2+C4

<接著強度> <Continue strength>

以規定的方法將矽烷偶合劑塗佈於暫時支撐用無機基板,其次經過規定的製程來層合高分子薄膜,根據JIS C6471所記載之180度剝離法,在下述條件下測定暫時支撐用無機基板與高分子薄膜之接著強度。此外,供予該測定之樣品係對於120mm×120mm之正方形的基板遮蔽一半的60mm×120mm,而在所剩之一半的區域進行薄膜加工,作成評價用的暫時支撐用無機基板。此外,在高分子薄膜層合時將薄膜的尺寸設為110mm×200mm,於單側設置聚醯亞胺薄膜之未接著部分,將該部分用於「裸端(exposed core)」,在測定樣品之薄膜部分以刀具作出切口,以寬度成為10mm的方式進行測定。 The decane coupling agent is applied to the inorganic substrate for temporary support by a predetermined method, and the polymer film is laminated by a predetermined process, and the inorganic substrate for temporary support is measured under the following conditions according to the 180-degree peeling method described in JIS C6471. The strength of the bond with the polymer film. In addition, the sample to be subjected to the measurement was masked by half a 60 mm × 120 mm on a square substrate of 120 mm × 120 mm, and film processing was performed in one of the remaining half areas to prepare an inorganic substrate for temporary support for evaluation. Further, when the polymer film is laminated, the size of the film is set to 110 mm × 200 mm, and the unbonded portion of the polyimide film is provided on one side, and the portion is used for "exposed core" in the measurement sample. The film portion was cut with a cutter and measured in such a manner that the width was 10 mm.

裝置名:島津製作所公司製「Autograph(註冊商標)AG-IS」 Device name: "Autograph (registered trademark) AG-IS" manufactured by Shimadzu Corporation

測定溫度:室溫 Measuring temperature: room temperature

剝離速度:50mm/分 Peeling speed: 50mm/min

氣體環境:大氣 Gas environment: atmosphere

測定樣品寬度:10mm Measuring sample width: 10mm

<外觀> <Appearance>

關於外觀品質,係以目視檢查疊層體全體之結果。 Regarding the appearance quality, the result of the entire laminate was visually inspected.

<異物密度> <foreign density>

取樣30mm×30mm之區域,利用100倍放大的附有測定長度功能之顯微鏡觀察取樣區域,針對以100倍觀察所確認到的異物,進一步將放大倍率設為400倍,測定長徑長度,將10μm以上者的個數作為係數,除以觀察面積作為異物密度。 The area of 30 mm × 30 mm was sampled, and the sampling area was observed with a microscope having a function of measuring the length of 100 times magnification. The foreign matter confirmed by 100-fold observation was further set to a magnification of 400 times, and the length of the long diameter was measured, and 10 μm was measured. The number of the above is taken as a coefficient divided by the observed area as the foreign matter density.

<聚醯亞胺薄膜之製造> <Manufacture of Polyimine Film> [製造例1] [Manufacturing Example 1] (聚醯胺酸溶液之製備) (Preparation of poly-proline solution)

將具備氮氣導入管、溫度計、攪拌棒之反應容器內以氮氣取代後,將3,3',4,4'-聯苯四羧酸二酐(BPDA)398質量份、與對苯二胺(PDA)147質量份溶解於4600質量份的N,N-二甲基乙醯胺後添加,將作為潤滑材料之膠體二 氧化矽分散於二甲基乙醯胺而成之分散體(日產化學工業製「Snowtex(註冊商標)DMAC-ST30」)以二氧化矽(潤滑材料)相對於聚醯胺酸溶液中之高分子固體成分總量成為0.15質量%的方式添加,在25℃之反應溫度攪拌24小時,得到具有表1所示之還原黏度的褐色黏稠聚醯胺酸溶液V1。 After substituting nitrogen gas in a reaction vessel equipped with a nitrogen gas introduction tube, a thermometer, and a stir bar, 398 parts by mass of 3,3',4,4'-biphenyltetracarboxylic dianhydride (BPDA) and p-phenylenediamine ( PDA) 147 parts by mass dissolved in 4,600 parts by mass of N,N-dimethylacetamide and added as a colloidal material for lubricating materials A dispersion of cerium oxide dispersed in dimethylacetamide ("Snowtex (registered trademark) DMAC-ST30" manufactured by Nissan Chemical Industries Co., Ltd.) with cerium oxide (lubricating material) relative to a polymer in a polyaminic acid solution The total amount of the solid content was 0.15 mass%, and the mixture was stirred at a reaction temperature of 25 ° C for 24 hours to obtain a brown viscous polyaminic acid solution V1 having the reduced viscosity shown in Table 1.

(聚醯亞胺薄膜之製作) (Production of polyimine film)

將上述所得之聚醯胺酸溶液V1,利用狹縫鑄模而以最終膜厚(醯亞胺化後之膜厚)成為25μm的方式塗佈於寬度1050mm之長的聚酯薄膜(東洋紡績股份有限公司製「A-4100」)之平滑面(無潤滑材料面)上,於105℃乾燥20分鐘後,從聚酯薄膜剝離,得到寬度920mm的自支撐性之聚醯胺酸薄膜。 The polyamic acid solution V1 obtained above was applied to a polyester film having a width of 1050 mm by a slit casting method so that the final film thickness (film thickness after yttrium imidation) was 25 μm (Toyobo Co., Ltd. limited) The smooth surface (non-lubricated material surface) of the company "A-4100") was dried at 105 ° C for 20 minutes, and then peeled off from the polyester film to obtain a self-supporting polyglycolic acid film having a width of 920 mm.

其次,藉由針梳拉幅機,使所得之自支撐性聚醯胺酸薄膜在150℃~420℃之溫度範圍階段性地升溫(第1段180℃×5分、第2段270℃×10分、第3段420℃×5分鐘)並實施熱處理而使其醯亞胺化,以狹縫去除兩端的針梳握持部分,得到寬度850mm之長形聚醯亞胺薄膜F1(1000m捲)。將所得之薄膜F1的特性示於表1。 Next, the obtained self-supporting poly-proline film is heated stepwise in a temperature range of 150 ° C to 420 ° C by a pin comb tenter (first segment 180 ° C × 5 minutes, second segment 270 ° C × 10 minutes, 3rd stage 420 ° C × 5 minutes) and heat treatment to imidize the yttrium, and remove the needle comb holding portions at both ends with a slit to obtain a long polyimine film F1 (1000 m roll) having a width of 850 mm. ). The characteristics of the obtained film F1 are shown in Table 1.

[製造例2] [Manufacturing Example 2] (聚醯胺酸溶液之製備) (Preparation of poly-proline solution)

將具備氮氣導入管、溫度計、攪拌棒之反應容器內以氮氣取代後,添加5-胺基-2-(對胺苯基)苯并唑(DAMBO)223質量份、與N,N-二甲基乙醯胺4416質量份並且使其完全溶解,其次,將作為潤滑材料之膠體二氧化矽分散於二甲基乙醯胺而成之分散體(日產化學工業製「Snowtex(註冊商標)DMAC-ST30」)以二氧化矽(潤滑材料)成為以聚醯胺酸溶液中之高分子固體成分總量而言為0.12質量%的方式,與苯均四酸二酐(PMDA)217質量份一同添加,於25℃之反應溫度攪拌24小時,得到具有表1所示之還原黏度的褐色黏稠聚醯胺酸溶液V2。 Adding 5-amino-2-(p-aminophenyl)benzene to a reaction vessel equipped with a nitrogen gas introduction tube, a thermometer, and a stir bar, followed by nitrogen substitution 223 parts by mass of azole (DAMBO), and 4416 parts by mass of N,N-dimethylacetamide, and completely dissolved, and secondly, a colloidal cerium oxide as a lubricating material is dispersed in dimethylacetamide. The dispersion ("Snowtex (registered trademark) DMAC-ST30" manufactured by Nissan Chemical Industries Co., Ltd.) has a cerium oxide (lubricating material) of 0.12% by mass based on the total amount of the polymer solid content in the polyaminic acid solution. It was added together with 217 parts by mass of pyromellitic dianhydride (PMDA), and stirred at a reaction temperature of 25 ° C for 24 hours to obtain a brown viscous polyamine solution V2 having the reduced viscosity shown in Table 1.

(聚醯亞胺薄膜之製作) (Production of polyimine film)

取代聚醯胺酸溶液V1,使用上述所得之聚醯胺酸溶液V2,藉由針梳拉幅機(第1段150℃×5分、第2段220℃×5分、第3段485℃×10分鐘)實 施熱處理使其醯亞胺化,以狹縫去除兩端的針梳握持部分,得到寬度850mm之長的聚醯亞胺薄膜F2(1000m捲)。將所得之薄膜F2的特性示於表1。 Instead of the polyaminic acid solution V1, the polyamic acid solution V2 obtained above was used, and the needle carding machine was used (the first stage 150 ° C × 5 points, the second stage 220 ° C × 5 points, the third stage 485 ° C ×10 minutes) The heat treatment was carried out to imidize the oxime, and the needle-clamping portions at both ends were removed by slits to obtain a polyimide film F2 (1000 m roll) having a width of 850 mm. The properties of the obtained film F2 are shown in Table 1.

[製造例3] [Manufacturing Example 3] (聚醯胺酸溶液之製備) (Preparation of poly-proline solution)

在製造例2中,除了未添加膠體二氧化矽分散於二甲基乙醯胺而成之分散體(日產化學工業製「Snowtex(註冊商標)DMAC-ST30」)以外,同樣地進行操作,得到聚醯胺酸溶液V3。 In the production example 2, except that a dispersion in which colloidal cerium oxide was dispersed in dimethylacetamide ("Snowtex (registered trademark) DMAC-ST30" manufactured by Nissan Chemical Industries, Ltd.) was added, the same operation was carried out. Polylysine solution V3.

(聚醯亞胺薄膜之製作) (Production of polyimine film)

將上述所得之聚醯胺酸溶液V3,利用缺角輪塗佈機(comma coater)而以最終膜厚(醯亞胺化後之膜厚)成為相當於5μm的方式塗佈於寬度1050mm之長的聚酯薄膜(東洋紡績股份有限公司製「A-4100」)之平滑面(無潤滑材料面)上,其次使用狹縫鑄模以最終膜厚包含V3係成為38μm的方式塗佈聚醯胺酸溶液V2,於105℃乾燥25分鐘後,自聚酯薄膜剝離,得到寬度920mm的自支撐性之聚醯胺酸薄膜。其次,藉由針梳拉幅機(第1段180℃×5分、第2段220℃×5分、第3段495℃×10分鐘)使所得之自支撐性聚醯胺酸薄膜施加熱處理並使其醯亞胺化,以狹縫去除兩端的針梳握持部分,得到寬度850mm之長的聚醯亞胺薄膜F3(1000m捲)。將所得之薄膜F3的特性示於表1。 The polyamic acid solution V3 obtained above was applied to a width of 1050 mm by a comma coater so that the final film thickness (film thickness after yttrium imidation) became 5 μm. On the smooth surface (non-lubricated material surface) of the polyester film ("A-4100" manufactured by Toyobo Co., Ltd.), the polyether acid was applied to the final film thickness so that the V3 system became 38 μm in the final film thickness. The solution V2 was dried at 105 ° C for 25 minutes, and then peeled off from the polyester film to obtain a self-supporting polyglycolic acid film having a width of 920 mm. Next, the obtained self-supporting polyglycolic acid film was heat-treated by a needle card tenter (first stage 180 ° C × 5 minutes, second stage 220 ° C × 5 minutes, third stage 495 ° C × 10 minutes) Further, the oxime was imidized, and the needle-clamping portions at both ends were removed by slits to obtain a polyimine film F3 (1000 m roll) having a width of 850 mm. The properties of the obtained film F3 are shown in Table 1.

<電漿處理薄膜之製造> <Manufacture of plasma treated film>

在製造例1所得之聚醯亞胺薄膜F1的單面施加真空電漿處理,得到電漿處理聚醯亞胺薄膜P1。將所得之薄膜P1的特性示於表2。 A vacuum plasma treatment was applied to one surface of the polyimide film F1 obtained in Production Example 1 to obtain a plasma-treated polyimide film P1. The characteristics of the obtained film P1 are shown in Table 2.

作為真空電漿處理,採用使用平行平板型之電極的RIE模式、藉由RF電漿之處理,將氮氣導入真空腔室內,導入13.54MHz的高頻電力,處理時間設為3分鐘。 As a vacuum plasma treatment, nitrogen gas was introduced into a vacuum chamber by a RIE mode using an electrode of a parallel plate type, and treated with RF plasma, and high frequency electric power of 13.54 MHz was introduced, and the treatment time was set to 3 minutes.

除了替換聚醯亞胺薄膜F1,使用製造例2所得之聚醯亞胺薄膜F2以外,同樣地進行操作,得到電漿處理聚醯亞胺薄膜P2。進一步在薄膜F3不含潤滑材料之層側的單面同樣地進行電漿處理,作成薄膜P3。 The plasma-treated polyimide film P2 was obtained in the same manner except that the polyimide film F1 was replaced with the polyimide film F2 obtained in Production Example 2. Further, plasma treatment was performed on the single side of the layer side of the film F3 containing no lubricating material in the same manner to form a film P3.

替換聚醯亞胺薄膜F1而使用100μm厚的聚對苯二甲酸乙二酯薄膜A4100(東洋紡股份有限公司製),得到電漿處理薄膜P4。 A polyimide film F4 was obtained by using a polyethylene terephthalate film A4100 (manufactured by Toyobo Co., Ltd.) having a thickness of 100 μm instead of the polyimide film F1.

同樣地替換聚醯亞胺薄膜F1而使用100μm厚的聚萘二甲酸乙二酯薄膜「Teonex」(帝人股份有限公司製),得到電漿處理薄膜P5。 In the same manner, the polyimine film F1 was replaced, and a polyethylene naphthalate film "Teonex" (manufactured by Teijin Co., Ltd.) having a thickness of 100 μm was used to obtain a plasma-treated film P5.

在使用聚醯亞胺薄膜F2所得之電漿處理聚醯亞胺薄膜P2,重疊1mm厚的不鏽鋼板製之規定的遮罩,利用LAN TECHNICAL SERVICE公司製的UV/臭氧照射裝置,進行120秒的UV/臭氧照射,得到圖案化電漿處理薄膜PP2。 The polyimine film P2 was treated with a plasma obtained by using a polyimide film F2, and a predetermined mask made of a stainless steel plate having a thickness of 1 mm was placed thereon, and a UV/ozone irradiation device manufactured by LAN TECHNICAL SERVICE Co., Ltd. was used for 120 seconds. UV/ozone irradiation gave a patterned plasma treated film PP2.

將所得之電漿處理薄膜以及圖案化電漿處理薄膜的特性示於表2。 The properties of the obtained plasma-treated film and patterned plasma-treated film are shown in Table 2.

<形成對無機基板之偶合劑層> <Formation of a coupling layer to an inorganic substrate> <塗佈例1> <Coating Example 1>

利用具有加熱板的真空腔室,在以下條件進行對無機基板之矽烷偶合劑塗佈。 The coating of the decane coupling agent to the inorganic substrate was carried out under the following conditions using a vacuum chamber having a hot plate.

將矽烷偶合劑(信越化學工業股份有限公司製「KBM-903」:3-胺基丙基三甲氧基矽烷)100質量份填滿於培養皿,靜置於加熱板上。此時加熱板溫度為25℃。其次在距離矽烷偶合劑液面垂直方向300mm處,水平地保持300mm×350mm×0.7mmt之PYREX玻璃板,關閉真空腔室,於大氣壓導入氮氣直到氧氣濃度成為0.1%以下,其次停止氮氣,使腔室內減壓至3×10-4Pa,使加熱板溫度升溫至120℃,保持10分鐘以進行對矽烷偶合劑蒸氣之暴露,此後,降低加熱板溫度,同時靜靜地在真空腔室內導入純淨的氮氣直到回到大氣壓,取出玻璃板,於純淨環境下以矽烷偶合劑塗佈面朝上的方式載置於100℃的加熱板,進行約3分鐘的熱處理,得到形成矽烷偶合劑層之無機基板S1。 100 parts by mass of a decane coupling agent ("KBM-903": 3-aminopropyltrimethoxydecane manufactured by Shin-Etsu Chemical Co., Ltd.) was filled in a petri dish and placed on a hot plate. At this time, the temperature of the hot plate was 25 °C. Next, at a distance of 300 mm from the liquid surface perpendicular to the liquid surface of the decane coupling agent, the PYREX glass plate of 300 mm × 350 mm × 0.7 mmt was horizontally held, the vacuum chamber was closed, nitrogen gas was introduced at atmospheric pressure until the oxygen concentration became 0.1% or less, and then the nitrogen gas was stopped to make the cavity The pressure is reduced to 3×10 -4 Pa in the room, and the temperature of the heating plate is raised to 120 ° C for 10 minutes to expose the vapor of the decane coupling agent. Thereafter, the temperature of the heating plate is lowered while quietly introducing the purity into the vacuum chamber. Nitrogen gas is returned to atmospheric pressure, the glass plate is taken out, and placed in a clean environment with a decane coupling agent coated face up on a hot plate at 100 ° C for about 3 minutes to obtain an inorganic layer forming a decane coupling agent layer. Substrate S1.

<塗佈例2> <Coating Example 2>

在以下條件下進行對無機基板之矽烷偶合劑塗佈。將矽烷偶合劑(信越化學工業股份有限公司製「KBM-903」:3-胺基丙基三甲氧基矽烷)100質量份填滿於培養皿,在加蓋的狀態下靜置於設置在換氣實驗台內的加熱板上,加熱板加溫至160℃。其次在距離矽烷偶合劑液面垂直方向100mm處,水平地保持100mm×100mm×1.0mmt之鈉鈣玻璃板,打開培養皿的蓋子,保持15分鐘以進行對矽烷偶合劑蒸氣之暴露,此後,將玻璃板以矽烷偶合劑塗佈面朝上的方式載於100℃的加熱板,進行約3分鐘的熱處理,得到形成了矽烷偶合劑層之無機基板S2。 The coating of the decane coupling agent to the inorganic substrate was carried out under the following conditions. 100 parts by mass of a decane coupling agent ("KBM-903": 3-aminopropyltrimethoxydecane manufactured by Shin-Etsu Chemical Co., Ltd.) was filled in a petri dish, and placed in a capped state. On the hot plate in the gas test bench, the heating plate was heated to 160 °C. Next, hold a 100 mm × 100 mm × 1.0 mmt soda lime glass plate horizontally at a distance of 100 mm from the liquid surface of the decane coupling agent, and open the lid of the culture dish for 15 minutes to expose the vapor of the decane coupling agent. Thereafter, The glass plate was placed on a hot plate at 100 ° C with the decane coupling agent coated upward, and heat-treated for about 3 minutes to obtain an inorganic substrate S2 on which a decane coupling agent layer was formed.

<塗佈例3> <Coating Example 3>

將矽烷偶合劑(信越化學工業股份有限公司製「KBM-903」:3-胺基丙基三甲氧基矽烷)0.5質量份、異丙醇99.5質量份於清淨的玻璃容器內攪拌混合而作成矽烷偶合劑溶液。另一方面,將300mm×350mm×0.7mmt之PYREX玻璃板設置於Japan Create公司製旋塗機,首先將異丙醇50ml滴至玻璃中央,藉由以500rpm甩去而進行洗淨,其次,將事先準備之矽烷偶合劑溶液 約30ml滴至玻璃板中央,以500rpm旋轉10秒,其次將轉速提升至1500rpm旋轉20秒,甩去矽烷偶合劑溶液。其次從停止之旋塗機取出玻璃板,於純淨環境下以矽烷偶合劑塗佈面朝上的方式載置於100℃的加熱板,進行約3分鐘的熱處理,得到形成矽烷偶合劑層之無機基板S3。 0.5 parts by mass of "cyclohexane coupling agent" (KBM-903: 3-aminopropyltrimethoxydecane) and 99.5 parts by mass of isopropyl alcohol were stirred and mixed in a clean glass vessel to prepare decane. Coupler solution. On the other hand, a PYREX glass plate of 300 mm × 350 mm × 0.7 mmt was placed in a spin coater manufactured by Japan Create Co., Ltd., first, 50 ml of isopropyl alcohol was dropped to the center of the glass, and washed by pulverizing at 500 rpm, and secondly, Prepared decane coupling agent solution About 30 ml was dropped into the center of the glass plate, rotated at 500 rpm for 10 seconds, and then the rotation speed was increased to 1500 rpm for 20 seconds, and the decane coupling agent solution was removed. Next, the glass plate was taken out from the spin coater which was stopped, and placed on a hot plate at 100 ° C in a pure environment with the coating side of the decane coupling agent applied thereto, and heat treatment was performed for about 3 minutes to obtain an inorganic layer forming a decane coupling agent layer. Substrate S3.

<塗佈例4> <Coating Example 4>

與塗佈例3同樣地,利用旋塗機在100mm×100mm×1.0mmt之鈉鈣玻璃板形成矽烷偶合劑層,得到無機基板S4。 In the same manner as in Coating Example 3, a decane coupling agent layer was formed on a soda lime glass plate of 100 mm × 100 mm × 1.0 mmt by a spin coater to obtain an inorganic substrate S4.

<塗佈例5>圖案化 <Coating Example 5> Patterning

在塗佈例1所得之無機基板S1重疊1mm厚之不鏽鋼板製的規定之遮罩,利用LAN TECHNICAL SERVICE公司製的UV/臭氧照射裝置,進行120秒的UV/臭氧照射,得到圖案化無機基板SP1。 A predetermined mask made of a stainless steel plate having a thickness of 1 mm was placed on the inorganic substrate S1 obtained in the coating example 1 and subjected to UV/ozone irradiation for 120 seconds using a UV/ozone irradiation apparatus manufactured by LAN TECHNICAL SERVICE to obtain a patterned inorganic substrate. SP1.

將所得之無機基板示於表3。 The obtained inorganic substrate is shown in Table 3.

<實施例1> <Example 1>

將修整為280mm×330mm的長方形之電漿處理薄膜P1的電漿處理面,以無機基板面露出10mm的方式重疊在所得之無機基板S1的矽烷偶合劑層側,利用Climb Products公司製的層合機,以無機基板側溫度100℃、層合時之輥壓力5kg/cm2、輥速度5mm/秒進行暫時層合。暫時層合後的高分子薄膜係不會因薄膜本身的重量剝離,但若輕刮薄膜邊緣則會輕易剝離之程度的接著性。此後,將所得之暫時層合基板放入潔淨烘箱,於200℃加熱30分鐘後,放置冷卻至室溫,得到本發明之疊層體L1。將所得之疊層體的 特性示於表4。 The plasma-treated surface of the rectangular plasma-treated film P1 which was trimmed to 280 mm × 330 mm was superposed on the decane coupling agent layer side of the obtained inorganic substrate S1 so as to expose the inorganic substrate surface by 10 mm, and laminated by Climb Products Co., Ltd. The machine was temporarily laminated at a temperature of 100 ° C on the inorganic substrate side, a roll pressure of 5 kg/cm 2 at the time of lamination, and a roll speed of 5 mm/sec. The polymer film which is temporarily laminated is not peeled off by the weight of the film itself, but if it is lightly scraped, the edge of the film is easily peeled off. Thereafter, the obtained temporarily laminated substrate was placed in a clean oven, heated at 200 ° C for 30 minutes, and then left to cool to room temperature to obtain a laminate L1 of the present invention. The properties of the obtained laminate are shown in Table 4.

<實施例2~5> <Examples 2 to 5>

以下,使用無機基板S1與表中所示之電漿處理薄膜來製作疊層體。此外,電漿處理薄膜P4之情形係將潔淨烘箱的加熱溫度設為140℃,電漿處理薄膜P5之情形係設為175℃。將所得之疊層體的特性示於表4。 Hereinafter, a laminate is produced using the inorganic substrate S1 and the plasma-treated film shown in the table. Further, in the case of the plasma treatment film P4, the heating temperature of the clean oven was set to 140 ° C, and the case of the plasma treatment film P5 was set to 175 °C. The properties of the obtained laminate are shown in Table 4.

<實施例6> <Example 6>

使用所得之無機基板S1與圖案化電漿處理薄膜PP2,同樣地進行操作,得到疊層體L6。關於疊層體L6,係將圖案化電漿處理薄膜未進行UV/臭氧照射之部分作為通常部、照射之部分作為易剝離部來評價。 The obtained inorganic substrate S1 and the patterned plasma-treated film PP2 were used in the same manner to obtain a laminate L6. In the laminate L6, a portion where the patterned plasma-treated film was not subjected to UV/ozone irradiation was used as a normal portion, and a portion to be irradiated was evaluated as an easily peelable portion.

(比較例1) (Comparative Example 1)

將切齊為280mm×330mm的長方形之電漿處理薄膜P1的電漿處理面,以無機基板面露出10mm露出的方式重疊在所得之無機基板S1C的矽烷偶合劑層,利用Climb Products公司製的層合機,以無機基板側溫度100℃、疊層時的輥壓力5kg/cm2、輥速度5mm/秒進行暫時層合。暫時層合後的高分子薄膜係不會因薄膜本身的重量剝離,但若輕刮薄膜邊緣則會輕易剝離之程度的接著性。此後,將所得之暫時層合基板放入潔淨烘箱,於200℃加熱30分鐘後,放置冷卻至室溫,得到本發明之疊層體C1。將所得之疊層體的特性示於表4。 The plasma-treated surface of the rectangular plasma-treated film P1 having a thickness of 280 mm × 330 mm was superimposed on the decane coupling agent layer of the obtained inorganic substrate S1C so that the inorganic substrate surface was exposed by 10 mm, and a layer made of Climb Products Co., Ltd. was used. The machine was temporarily laminated at a temperature of 100 ° C on the inorganic substrate side, a roll pressure of 5 kg/cm 2 at the time of lamination, and a roll speed of 5 mm/sec. The polymer film which is temporarily laminated is not peeled off by the weight of the film itself, but if it is lightly scraped, the edge of the film is easily peeled off. Thereafter, the obtained temporarily laminated substrate was placed in a clean oven, heated at 200 ° C for 30 minutes, and then left to cool to room temperature to obtain a laminate C1 of the present invention. The properties of the obtained laminate are shown in Table 4.

<實施例7~11> <Examples 7 to 11>

將切齊為90mm×90mm的長方形之電漿處理薄膜P1的電漿處理面,以無機基板面的邊緣露出5mm的方式重疊在無機基板S2的矽烷偶合劑層側,在井元製作所製真空加壓機中,於上下以由碳片所構成的緩衝材夾住,在真空下將熱板溫度設為300℃加壓20分鐘,冷卻至室溫,得到疊層體L7。又,同樣地使用電漿處理薄膜P2~P5,同樣地得到疊層體。此外,電漿處理薄膜P4之情形係將真空加壓溫度設為140℃,電漿處理薄膜P5之情形係設為175℃。將所得之疊層體的特性示於表4。 The plasma-treated surface of the rectangular plasma-treated film P1 having a thickness of 90 mm × 90 mm was superimposed on the side of the arsenal coupling agent layer of the inorganic substrate S2 so that the edge of the inorganic substrate surface was exposed by 5 mm, and was vacuum-pressed at the well manufacturing facility. In the machine, the cushioning material consisting of a carbon sheet was sandwiched between the upper and lower sides, and the temperature of the hot plate was set to 300 ° C under vacuum for 20 minutes, and the mixture was cooled to room temperature to obtain a laminate L7. Further, the plasma-treated films P2 to P5 were similarly used, and a laminate was obtained in the same manner. Further, in the case of the plasma-treated film P4, the vacuum pressure temperature was set to 140 ° C, and the plasma treatment film P5 was set to 175 °C. The properties of the obtained laminate are shown in Table 4.

<比較例2> <Comparative Example 2>

除了使用無機基板S4以外,與實施例7同樣地操作而得到疊層體C2。將所得之疊層體的特性示於表4。 The laminate C2 was obtained in the same manner as in Example 7 except that the inorganic substrate S4 was used. The properties of the obtained laminate are shown in Table 4.

<實施例12> <Example 12>

使用圖案化無機基板SP1與電漿處理薄膜P2,以下與實施例1同樣地操作而得到疊層體L12。關於疊層體L6,係將圖案化無機板未進行UV/臭氧照射之部分作為通常部、照射之部分作為易剝離部來評價。 Using the patterned inorganic substrate SP1 and the plasma-treated film P2, the laminate L12 was obtained in the same manner as in Example 1 below. In the laminate L6, a portion where the patterned inorganic plate was not subjected to UV/ozone irradiation was used as a normal portion, and a portion to be irradiated was evaluated as an easily peelable portion.

<實施例13> <Example 13>

使用圖案化無機基板SP1與圖案化電漿處理薄膜PP2,以下與實施例1同樣地操作而得到疊層體L13。此外,用於無機板側之圖案化處理的遮罩、與用於電漿處理薄膜側之圖案化處理的遮罩之形狀相同,而以一起進行處理之部分彼此重疊的方式配置。關於疊層體L13,係將未進行UV/臭氧照射之部分作為通常部、照射之部分作為易剝離部來評價。將結果示於表4。 The patterned inorganic substrate SP1 and the patterned plasma-treated film PP2 were used in the same manner as in Example 1 to obtain a laminate L13. Further, the mask for the patterning treatment on the inorganic sheet side has the same shape as the mask used for the patterning treatment on the side of the plasma processing film, and is disposed such that the portions processed together are overlapped with each other. In the laminate L13, a portion where no UV/ozone irradiation was performed was used as a normal portion, and a portion to be irradiated was evaluated as an easily peelable portion. The results are shown in Table 4.

<實施例14> <Example 14>

在圖案化無機基板SP1,利用鑄模塗佈機,以最終膜厚成為25μm的方式塗佈製造例2所得之聚醯胺酸溶液,放入防爆型烘箱而於80℃乾燥100分鐘後,以5℃/分升溫至200℃,於200℃保持60分鐘,其次以10℃/分升溫至480℃而在480℃保持5分後,以30℃/分冷卻至100℃,打開烘箱門冷卻至室溫附近而得到高分子薄膜層直接形成於無機基板面上之疊層體L14。將結果示於表4。 In the patterned inorganic substrate SP1, the polyamic acid solution obtained in Production Example 2 was applied by a mold coater so that the final film thickness became 25 μm, and placed in an explosion-proof oven and dried at 80 ° C for 100 minutes, and then dried at 5 ° C for 5 minutes. °C / min to 200 ° C, hold at 200 ° C for 60 minutes, followed by 10 ° C / min to 480 ° C and 480 ° C for 5 minutes, then cooled to 100 ° C at 30 ° C / min, open the oven door to cool to the chamber A laminate L14 in which a polymer film layer is directly formed on the surface of the inorganic substrate is obtained in the vicinity of the temperature. The results are shown in Table 4.

(應用例1) (Application example 1)

使用根據實施例1~6、實施例12、實施例13、實施例14、比較例1所得之疊層體,根據以下步驟,試作底閘(bottom gate)型的薄膜電晶體陣列。 Using the laminates obtained in Examples 1 to 6, Example 12, Example 13, Example 14, and Comparative Example 1, a bottom gate type thin film transistor array was tried in accordance with the following procedure.

阻氣層之形成 Gas barrier formation

利用反應性噴鍍法在高分子薄膜側全面形成由SiON所構成之100nm的阻氣膜。其次,以噴鍍法形成厚度80nm的鋁層,藉由光蝕刻法形成閘極配線與閘極電極。其次,利用狹縫鑄模塗佈機形成環氧樹脂系之閘極絶緣膜(厚度80nm)。進一步以噴鍍法形成5nm的鉻層、40nm的金層,以光蝕刻法形成源極電極與汲極電極。其次利用狹縫鑄模塗佈機,塗佈絕緣層兼壩(dam)層之環氧樹脂,利用藉由UV-YAG雷射之燒蝕(ablation)以成為直徑100μm的圓形的方式形成包含源極電極與汲極電極之半導體層用之厚度250nm的壩層,此外亦同時進行與上部電極之連接點的通孔之形成。其次,藉由噴墨印刷法將有機半導體之聚噻吩吐出至壩內,於通孔部埋入銀糊,進一步形成鋁配線作為上部電極而形成具有640×480像素之薄膜電晶體陣列。 A 100 nm gas barrier film made of SiON was formed on the polymer film side by a reactive sputtering method. Next, an aluminum layer having a thickness of 80 nm was formed by a sputtering method, and a gate wiring and a gate electrode were formed by photolithography. Next, an epoxy-based gate insulating film (thickness: 80 nm) was formed by a slit die coater. Further, a 5 nm chromium layer and a 40 nm gold layer were formed by a sputtering method, and a source electrode and a drain electrode were formed by photolithography. Next, an epoxy resin of an insulating layer and a dam layer was applied by a slit die coater, and an inclusion source was formed by ablation by a UV-YAG laser to form a circular shape having a diameter of 100 μm. The dam layer having a thickness of 250 nm for the semiconductor layer of the pole electrode and the drain electrode is also formed by the through hole at the connection point with the upper electrode. Next, the polythiophene of the organic semiconductor was discharged into the dam by an inkjet printing method, a silver paste was buried in the via hole portion, and an aluminum wiring was further formed as an upper electrode to form a thin film transistor array having 640 × 480 pixels.

將所得之薄膜電晶體陣列作為底板,藉由在前板重疊電泳顯示媒體,作成顯示器元件,將電晶體的產率與顯示性能以各像素之ON/OFF來判定。結果,在實施例所得之薄膜電晶體陣列,其顯示性能均為良好。另一方面,在比較例之疊層體C1中,縱向12條、橫向5條線的顯示成為缺陷。 Using the obtained thin film transistor array as a substrate, a display element was formed by superposing an electrophoretic display medium on a front plate, and the yield and display performance of the transistor were determined by ON/OFF of each pixel. As a result, the thin film transistor array obtained in the examples exhibited good display properties. On the other hand, in the laminate C1 of the comparative example, the display of 12 lines in the longitudinal direction and 5 lines in the horizontal direction became defects.

此外,在比較例C1中成為缺陷之像素,均為發生閘極配線之斷線、或上部電極之斷線。在相當於斷線部分之高分子薄膜的底面,即與玻璃板之接著面觀察到長徑10μm以上的異物,暗示斷線係由於異物而阻礙光蝕刻步驟之曝光。進行斷線原因之異物的組成分析,結果為Si元素佔異物的25%以上,判斷為矽烷偶合劑凝集物。 Further, in the pixel which was defective in Comparative Example C1, the disconnection of the gate wiring or the disconnection of the upper electrode occurred. A foreign matter having a long diameter of 10 μm or more is observed on the bottom surface of the polymer film corresponding to the broken portion, that is, on the surface of the glass plate, suggesting that the disconnection is inhibited from exposure by the photo-etching step due to foreign matter. The composition analysis of the foreign matter caused by the disconnection was carried out, and as a result, Si element accounted for 25% or more of the foreign matter, and it was judged to be a decane coupling agent agglomerate.

關於進行圖案化之L6、L12、L13、L14,在重疊前板後,沿著圖案化處理部的外圍以UV-YAG雷射燒斷高分子薄膜部,以利用很薄的剃刀上之刀刃撈起的方式自斷開處的邊緣進行剝離時,均可輕易地剝離,而可得到可撓性電泳顯示器元件。 Regarding the patterning of L6, L12, L13, and L14, after the front plate is overlapped, the polymer film portion is burned by a UV-YAG laser along the periphery of the patterning portion to take advantage of the blade on the thin razor. The method of peeling off can be easily peeled off from the edge of the break, and a flexible electrophoretic display element can be obtained.

關於未進行圖案化處理的其它疊層體,一邊自玻璃基板側掃描YAG雷 射一邊照射全面,在高分子薄膜與玻璃板之接著性弱化之狀態下,同樣以利用薄刃撈起的方式進行剝離操作,同樣地得到可撓性電泳顯示器元件。 Regarding other laminates which are not subjected to patterning, YAG Ray is scanned from the side of the glass substrate In the state where the radiation of the polymer film and the glass plate is weakened, the peeling operation is performed in the same manner as the thin blade is lifted, and the flexible electrophoretic display element is obtained in the same manner.

所得之可撓性電泳顯示器元件,除了自L14所得者以外,即使捲繞於直徑3mm的圓柱,顯示性能亦不會劣化,確認具有充分實用的可撓性。關於自L14所得之可撓性電泳顯示器元件,雖然捲繞於直徑5mm圓柱時沒有問題,然而當捲繞於直徑3mm的圓柱時,高分子薄膜的邊緣產生裂痕。這是因為高分子薄膜本身相當脆弱。 The obtained flexible electrophoretic display element was found to have a display performance which was not deteriorated even when it was obtained by a cylinder having a diameter of 3 mm, and it was confirmed that the flexible electrophoretic display element had sufficient practical flexibility. The flexible electrophoretic display element obtained from L14 has no problem when wound around a cylinder having a diameter of 5 mm, but when wound around a cylinder having a diameter of 3 mm, cracks occur at the edges of the polymer film. This is because the polymer film itself is quite fragile.

<應用例2> <Application Example 2>

在實施例1所得之疊層體L1中,於應用例1剝離可撓性電泳顯示器元件後,將原基板之PYREX玻璃板在室溫下浸漬於10%的氫氧化鈉水溶液20小時,其次在水洗之後,以液晶基板用玻璃洗淨裝置進行清潔洗淨。使用洗淨後之玻璃板,再與實施例1同樣地進行,在與實施例1所用之側同一面形成矽烷偶合劑層,以下同樣地操作而得到疊層體。所得之疊層體的外觀品質良好,異物密度為0.5個/cm2,充分地顯示可再生使用。 In the laminate L1 obtained in Example 1, after peeling off the flexible electrophoretic display device in Application Example 1, the PYREX glass plate of the original substrate was immersed in a 10% aqueous sodium hydroxide solution at room temperature for 20 hours, followed by After washing with water, the liquid crystal substrate was cleaned and washed with a glass cleaning device. The glass plate after washing was used in the same manner as in Example 1, and a decane coupling agent layer was formed on the same surface as that used in Example 1, and a laminate was obtained in the same manner as below. The obtained laminate was excellent in appearance quality, and had a foreign matter density of 0.5 / cm 2 , and was sufficiently reproducibly used.

<比較應用例> <Comparative application example>

在比較例所得之疊層體C1中,在與應用例2同樣地剝離可撓性電泳顯示器元件後,同樣地進行洗淨操作,再以同樣的操作形成疊層體,惟異物密度增加至46個/cm2,確認外觀品質顯著降低。 In the laminate C1 obtained in the comparative example, after the flexible electrophoretic display element was peeled off in the same manner as in Application Example 2, the cleaning operation was performed in the same manner, and the laminate was formed in the same manner, and the foreign matter density was increased to 46. /cm 2 , confirming that the appearance quality is significantly reduced.

(應用例3) (Application Example 3)

將實施例7~11、比較例2所得之疊層體覆蓋具有開口部的不鏽鋼製邊框而固定於噴鍍裝置內的基板架。以基板架與疊層體之支撐體密合的方式固定,藉由在基板架內流動冷媒,而可設定疊層體之溫度,並將疊層體之溫度設定為2℃。首先,在疊層體之高分子薄膜表面施加電漿處理。電漿處理條件係在氬氣中,設為頻率13.56MHz、輸出200W、氣壓1×10-3Torr之條件,處理時之溫度設為2℃,處理時間設為2分鐘。其次,在頻率13.56MHz、輸出450W、氣壓3×10-3Torr之條件下,使用鎳-鉻(鉻10質量%)合金的靶材,在氬氣環境下藉由DC磁控噴鍍法,以1nm/秒之速率形成厚度11nm的鎳-鉻合金被膜(基底層)。其次,將疊層體的溫度設定為2℃,進行噴鍍。然後,以10nm/秒之速率蒸鍍銅,形成厚度0.22μm的銅薄膜。 如此,從各疊層體得到附有形成基底金屬薄膜之薄膜的積層板。此外,銅及NiCr層之厚度係藉由螢光X射線法來確認。 The laminates obtained in Examples 7 to 11 and Comparative Example 2 were covered with a stainless steel frame having an opening and fixed to a substrate holder in the thermal spraying apparatus. The substrate holder was fixed to the support of the laminate, and the temperature of the laminate was set by flowing a refrigerant into the substrate holder, and the temperature of the laminate was set to 2 °C. First, a plasma treatment is applied to the surface of the polymer film of the laminate. The plasma treatment conditions were set to argon gas at a frequency of 13.56 MHz, an output of 200 W, and a gas pressure of 1 × 10 -3 Torr. The temperature at the time of the treatment was 2 ° C, and the treatment time was 2 minutes. Next, using a target of nickel-chromium (chromium 10% by mass) alloy at a frequency of 13.56 MHz, an output of 450 W, and a pressure of 3 × 10 -3 Torr, by DC magnetron sputtering in an argon atmosphere, A nickel-chromium alloy film (base layer) having a thickness of 11 nm was formed at a rate of 1 nm/second. Next, the temperature of the laminate was set to 2 ° C, and thermal spraying was performed. Then, copper was vapor-deposited at a rate of 10 nm/sec to form a copper thin film having a thickness of 0.22 μm. Thus, a laminate having a film forming the underlying metal thin film was obtained from each of the laminates. Further, the thicknesses of the copper and NiCr layers were confirmed by a fluorescent X-ray method.

其次,將來自各薄膜之附有形成基底金屬薄膜之薄膜的積層板固定於Cu製的邊框,利用硫酸銅電鍍浴,浸漬於電解電鍍液(硫酸銅80g/l、硫酸210g/l、HCl、光澤劑少量)、藉由流過電氣1.5A/dm2,形成厚度4μm的加厚銅鍍敷層(加厚鍍敷層)。接著於120℃進行10分鐘的熱處理並乾燥,在疊層體的高分子薄膜面形成銅箔層。 Next, a laminate from each film on which a film forming the underlying metal thin film is attached is fixed to a frame made of Cu, and immersed in an electrolytic plating solution (copper sulfate 80 g/liter, sulfuric acid 210 g/liter, HCl, using a copper sulfate plating bath). A small amount of the gloss agent) was formed by flowing an electric 1.5 A/dm 2 to form a thick copper plating layer (thickness plating layer) having a thickness of 4 μm. Subsequently, heat treatment was performed at 120 ° C for 10 minutes and dried to form a copper foil layer on the surface of the polymer film of the laminate.

對於所得之各金屬化聚醯亞胺薄膜‧支撐體疊層體,塗佈乾燥光阻(Shipley公司製「FR-200」)後,以玻璃光罩進行非接觸曝光,進一步以1.2質量%KOH水溶液顯影。其次,在包含HCl及過氧化氫之氯化銅(II)的蝕刻線,以40℃、2kgf/cm2之噴灑壓力進行蝕刻,形成線/空間=20μm/20μm之線列作為測試圖案。其次,在施加0.5μm厚的無電解錫鍍敷後,於125℃進行1小時的退火處理,得到配線圖案。 Each of the obtained metalized polyimide film ‧ support laminates was coated with a dry photoresist ("FR-200" manufactured by Shipley Co., Ltd.), and then subjected to non-contact exposure with a glass mask to further 1.2% by mass of KOH. Aqueous solution development. Next, etching was performed at an etching line of 40 ° C and 2 kgf / cm 2 on an etching line containing copper chloride (II) of HCl and hydrogen peroxide to form a line array of line/space = 20 μm / 20 μm as a test pattern. Next, after applying a 0.5 μm thick electroless tin plating, annealing treatment was performed at 125 ° C for 1 hour to obtain a wiring pattern.

將所得之配線圖案以光學顯微鏡觀察,並且利用測試圖案來確認有無斷線/短路。結果由實施例7~11之疊層體所得之配線圖案沒有斷線、短路,圖案形狀亦為良好。另一方面,由比較例2之疊層體所得之配線圖案在一部分觀察到斷線。斷線部的配線形狀變成配線變瘦且斷斷續續的形狀,推論係在光阻步驟之曝光受到阻礙之結果。又,斷線部位之高分子薄膜部分變成凸出狀態,判明高分子薄膜與玻璃基板間存在異物。異物係組成分析的結果為Si元素佔25%以上,推論是矽烷偶合劑之凝集物。 The obtained wiring pattern was observed with an optical microscope, and the test pattern was used to confirm the presence or absence of disconnection/short circuit. As a result, the wiring pattern obtained from the laminates of Examples 7 to 11 was not broken or short-circuited, and the pattern shape was also good. On the other hand, the wiring pattern obtained from the laminate of Comparative Example 2 was observed to be broken at a part. The wiring shape of the disconnection portion becomes a shape in which the wiring is thin and intermittent, and it is inferred that the exposure in the photoresist step is hindered. Further, the polymer film portion of the broken portion was in a convex state, and it was found that foreign matter was present between the polymer film and the glass substrate. As a result of analysis of the composition of the foreign body system, Si element accounts for 25% or more, and it is inferred that it is an agglomerate of a decane coupling agent.

其次,以與應用例1同樣的手法自玻璃板剝離高分子薄膜,作成可撓性配線基板。所得之可撓性配線板的彎曲性為良好。 Then, the polymer film was peeled from the glass plate in the same manner as in Application Example 1 to form a flexible wiring board. The flexibility of the obtained flexible wiring board was good.

根據以上結果,本發明之疊層體適用於製造可撓性電子元件,並且在基板的再生性方面亦顯示優異特性。 According to the above results, the laminate of the present invention is suitable for producing a flexible electronic component and exhibits excellent characteristics in terms of reproducibility of the substrate.

[產業上之可利用性] [Industrial availability]

本發明之疊層體不僅可在作成電子元件後,輕易地從無機基板剝離附有電子元件之高分子薄膜,同時為可提供防止用於接著疊層體之矽烷偶合 劑之凝集體附著於無機基板、外觀品質優異、使高分子薄膜/無機基板間之接著力均質化的疊層體者,對產業界的貢獻極大。 The laminate of the present invention can easily peel off the polymer film with the electronic component from the inorganic substrate after the electronic component is formed, and at the same time, can provide decane coupling for preventing the subsequent laminate. A laminate in which the aggregate of the agent adheres to the inorganic substrate and has excellent appearance quality and homogenizes the adhesion between the polymer film and the inorganic substrate contributes greatly to the industry.

再者,根據本發明,可減少高分子薄膜剝離後之無機基板表面粗糙度,可在簡單的洗淨操作後再塗佈矽烷偶合劑而作為基板活用,顯著地提高無機基板的再生性。 Further, according to the present invention, the surface roughness of the inorganic substrate after the peeling of the polymer film can be reduced, and the decane coupling agent can be applied as a substrate after a simple cleaning operation, and the reproducibility of the inorganic substrate can be remarkably improved.

Claims (15)

一種疊層體,其係高分子薄膜與無機基板隔著矽烷偶合劑層接合而獲得,其中存在於該高分子薄膜與該無機基板之間的長徑10μm以上之異物個數為3個/cm2以下,且該高分子薄膜與該無機基板之接著強度為高分子薄膜之破裂強度的1/2以下。 A laminate obtained by bonding a polymer film and an inorganic substrate via a decane coupling agent layer, wherein the number of foreign matters having a long diameter of 10 μm or more between the polymer film and the inorganic substrate is 3/cm 2 or less, and the adhesive strength of the polymer film and the inorganic substrate is 1/2 or less of the breaking strength of the polymer film. 如申請專利範圍第1項之疊層體,其中該異物為包含矽原子之異物。 The laminate according to claim 1, wherein the foreign matter is a foreign matter containing a ruthenium atom. 如申請專利範圍第1或2項之疊層體,其中該高分子薄膜為厚度3μm以上之聚醯亞胺薄膜。 The laminate according to claim 1 or 2, wherein the polymer film is a polyimide film having a thickness of 3 μm or more. 如申請專利範圍第1或2項中任一項之疊層體,其中該無機基板為面積1000cm2以上之玻璃板。 The laminate according to any one of claims 1 to 2, wherein the inorganic substrate is a glass plate having an area of 1000 cm 2 or more. 如申請專利範圍第1或2項中任一項之疊層體,其中該矽烷偶合劑為每一分子具有1個矽原子之化學結構。 The laminate according to any one of claims 1 to 2, wherein the decane coupling agent is a chemical structure having one fluorene atom per molecule. 如申請專利範圍第1或2項中任一項之疊層體,其係高分子薄膜與無機基板隔著矽烷偶合劑層接合而獲得,具有該高分子薄膜與該無機基板之間的接著強度相異的良好接著部分與易剝離部分,且該良好接著部分與該易剝離部分形成規定的圖案。 The laminate according to any one of claims 1 to 2, wherein the polymer film is bonded to the inorganic substrate via a layer of a decane coupling agent, and has a bonding strength between the polymer film and the inorganic substrate. A distinct good subsequent portion and an easily peelable portion, and the good succeeding portion and the easily peelable portion form a prescribed pattern. 一種疊層體之製造方法,其特徵為具有下述(1)~(3)之步驟:(1)藉由使無機基板暴露於汽化之矽烷偶合劑,在無機基板上形成矽烷偶合劑層;(2)在該矽烷偶合劑層重疊表面經活性化處理之高分子薄膜;(3)藉由加熱加壓而接著兩者。 A method for producing a laminate, characterized by having the following steps (1) to (3): (1) forming a decane coupling agent layer on an inorganic substrate by exposing the inorganic substrate to a vaporized decane coupling agent; (2) a polymer film which is activated on the surface of the decane coupling agent layer to be activated; (3) both are heated and pressurized to follow the two. 一種疊層體之製造方法,其特徵為具有下述(1)~(3)之步驟:(1)藉由使無機基板暴露於汽化之矽烷偶合劑,在無機基板上形成矽烷偶合劑層;(2)在該矽烷偶合劑層上塗佈高分子之溶液或高分子前驅物溶液;(3)乾燥‧加熱該高分子溶液或該高分子前驅物溶液以作成高分子薄膜而得到疊層體。 A method for producing a laminate, characterized by having the following steps (1) to (3): (1) forming a decane coupling agent layer on an inorganic substrate by exposing the inorganic substrate to a vaporized decane coupling agent; (2) coating a polymer solution or a polymer precursor solution on the decane coupling agent layer; (3) drying ‧ heating the polymer solution or the polymer precursor solution to form a polymer film to obtain a laminate . 如申請專利範圍第7或8項中任一項之疊層體之製造方法,其中該(1)之步驟係在約略大氣壓下進行。 The method for producing a laminate according to any one of claims 7 to 8, wherein the step (1) is carried out at about atmospheric pressure. 如申請專利範圍第7或8項中任一項之疊層體之製造方法,其中該(1)之步驟係在減壓下進行。 The method for producing a laminate according to any one of claims 7 to 8, wherein the step (1) is carried out under reduced pressure. 如申請專利範圍第7或8項中任一項之疊層體之製造方法,其中該疊層體具有該高分子薄膜與該無機基板之間的接著強度相異的良好接著部分與易剝離部分,且該良好接著部分與該易剝離部分形成規定的圖案。 The method for producing a laminate according to any one of claims 7 to 8, wherein the laminate has a good adhesion portion and an easily peelable portion having different bonding strength between the polymer film and the inorganic substrate. And the good subsequent portion forms a prescribed pattern with the easily peelable portion. 如申請專利範圍第11項之疊層體之製造方法,其中藉由在形成該矽烷偶合劑層時,遮蔽該無機基板的一部分,以使該良好接著部分與該易剝離部分形成規定的圖案。 The method for producing a laminate according to claim 11, wherein a part of the inorganic substrate is shielded by forming the decane coupling agent layer so that the good adhesion portion and the easily peelable portion form a predetermined pattern. 如申請專利範圍第11項之疊層體之製造方法,其中藉由在該矽烷偶合劑層形成後,對於矽烷偶合劑層的一部分照射活性能量射線,使該良好接著部分與該易剝離部分形成規定的圖案。 The method for producing a laminate according to claim 11, wherein after the decane coupling agent layer is formed, a part of the decane coupling agent layer is irradiated with an active energy ray to form the good adhesion portion and the easily peelable portion. The prescribed pattern. 一種可撓性電子元件之製造方法,其特徵為:使用以如申請專利範圍第7至10項中任一項之疊層體之製造方法所得之疊層體,在該疊層體之高分子薄膜上形成電子元件,其次,將該高分子薄膜連同該電子元件從無機基板剝離。 A method of producing a flexible electronic component, comprising: using the laminate obtained by the method for producing a laminate according to any one of claims 7 to 10, the polymer in the laminate An electronic component is formed on the film, and second, the polymer film is peeled off from the inorganic substrate together with the electronic component. 一種可撓性電子元件之製造方法,其特徵為:使用如申請專利範圍第11至13項中任一項之疊層體之製造方法所得之疊層體,在該疊層體之高分子薄膜中相當於該易剝離部分的部分之上形成電子元件,其次,沿著該疊層體之該易剝離部分的外圍,在該高分子薄膜作出切口,將該高分子薄膜連同電子元件從無機基板剝離。 A method of producing a flexible electronic component, comprising: a laminate obtained by the method for producing a laminate according to any one of claims 11 to 13; a polymer film in the laminate Forming an electronic component on a portion corresponding to the easily peelable portion, and second, making a slit in the polymer film along the periphery of the easily peelable portion of the laminate, and the polymer film together with the electronic component from the inorganic substrate Stripped.
TW103103257A 2013-02-04 2014-01-28 A laminated body, a method for producing a laminated body, and a method for manufacturing the flexible electronic device TWI524991B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013019565 2013-02-04

Publications (2)

Publication Number Publication Date
TW201434629A TW201434629A (en) 2014-09-16
TWI524991B true TWI524991B (en) 2016-03-11

Family

ID=51262359

Family Applications (1)

Application Number Title Priority Date Filing Date
TW103103257A TWI524991B (en) 2013-02-04 2014-01-28 A laminated body, a method for producing a laminated body, and a method for manufacturing the flexible electronic device

Country Status (3)

Country Link
JP (1) JP6447135B2 (en)
TW (1) TWI524991B (en)
WO (1) WO2014119648A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI754340B (en) * 2019-12-12 2022-02-01 友達光電股份有限公司 Chip

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI709481B (en) 2014-08-25 2020-11-11 日商東洋紡股份有限公司 Silane coupling agent laminated layer polymer film and its manufacturing method, laminated body and its manufacturing method, and flexible electronic device manufacturing method
KR20170056543A (en) * 2014-09-19 2017-05-23 유니티카 가부시끼가이샤 Laminate and method for manufacturing flexible device
JP2017149041A (en) * 2016-02-25 2017-08-31 東洋紡株式会社 Layered body and method for producing the same
JP2017149040A (en) * 2016-02-25 2017-08-31 東洋紡株式会社 Layered body and method for producing the same
JP6766428B2 (en) * 2016-04-25 2020-10-14 東洋紡株式会社 Method of manufacturing a laminate
JP6766436B2 (en) * 2016-05-09 2020-10-14 東洋紡株式会社 Laminated body and manufacturing method of laminated body
TWI608639B (en) 2016-12-06 2017-12-11 財團法人工業技術研究院 Flexible thermoelectric structure and method for manufacturing the same
US11267216B2 (en) * 2017-01-25 2022-03-08 Toyobo Co., Ltd. Polymer film laminated substrate and method for producing flexible electronic device
JP6969111B2 (en) * 2017-03-02 2021-11-24 東洋紡株式会社 Polyimide / inorganic substrate laminate with gas barrier layer and its manufacturing method
CN108448139A (en) * 2018-05-16 2018-08-24 深圳市善营自动化股份有限公司 A kind of production method and equipment of fuel cell membrane electrode
TWI685518B (en) * 2018-07-31 2020-02-21 國立中興大學 Circuit board and preparation method thereof
US20210308987A1 (en) * 2018-08-20 2021-10-07 Toyobo Co., Ltd. Laminate, and method for producing laminate
US20210040608A1 (en) * 2019-08-05 2021-02-11 GM Global Technology Operations LLC Method for bonding a polymeric material to a substrate
CN115668460A (en) 2020-07-29 2023-01-31 东洋纺株式会社 Method for manufacturing flexible electronic device
EP4371766A1 (en) * 2021-07-16 2024-05-22 Toyobo Co., Ltd. Laminate of inorganic substrate and heat-resistant polymer film
WO2023286686A1 (en) * 2021-07-16 2023-01-19 東洋紡株式会社 Multilayer body of inorganic substrate and transparent heat-resistant polymer film
TW202336276A (en) * 2021-12-28 2023-09-16 日商四國化成工業股份有限公司 Organic coating and method for producing same
WO2023127679A1 (en) * 2021-12-28 2023-07-06 四国化成工業株式会社 Surface treatment liquid for metal

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004307579A (en) * 2003-04-03 2004-11-04 Mitsubishi Chemicals Corp Active energy ray-curable coating composition and molded article having cured coating film obtained from the composition
JP4548828B2 (en) * 2004-10-29 2010-09-22 Dowaホールディングス株式会社 Method for manufacturing metal-coated substrate
JP5267261B2 (en) * 2009-03-25 2013-08-21 東レ株式会社 Polyester film for magnetic recording tape
KR20120059512A (en) * 2009-08-27 2012-06-08 아사히 가라스 가부시키가이샤 Multilayer structure with flexible base material and support, panel for use in electronic device provided with support and production method for panel for use in electronic device
US8980409B2 (en) * 2011-04-15 2015-03-17 Toyobo Co., Ltd. Laminate, method for producing same, and method for producing device structure using same
US9604391B2 (en) * 2011-04-15 2017-03-28 Toyobo Co., Ltd. Laminate, production method for same, and method of creating device structure using laminate
WO2013114685A1 (en) * 2012-02-01 2013-08-08 東洋紡株式会社 Laminate, method for producing same, and method for producing device structure using same
KR102034762B1 (en) * 2012-06-20 2019-10-21 도요보 가부시키가이샤 Process for producing layered product, layered product, process for producing layered product with device using said layered product, and layered product with device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI754340B (en) * 2019-12-12 2022-02-01 友達光電股份有限公司 Chip

Also Published As

Publication number Publication date
TW201434629A (en) 2014-09-16
WO2014119648A1 (en) 2014-08-07
JP6447135B2 (en) 2019-01-09
JPWO2014119648A1 (en) 2017-01-26

Similar Documents

Publication Publication Date Title
TWI524991B (en) A laminated body, a method for producing a laminated body, and a method for manufacturing the flexible electronic device
CN107073891B (en) Laminated polymer film of silane coupling agent layer
TWI577552B (en) Laminate and method for manufacturing the same and method for manufacturing device structure using the same
TWI574843B (en) Laminate and method for manufacturing the same, and method for manufacturing device structure using the same
TWI629175B (en) Rigid composite laminated board and manufacturing method thereof, laminated body and manufacturing method of element using the laminated body
JPWO2016031746A6 (en) Silane coupling agent layer laminated polymer film
JP6181984B2 (en) Polymer film laminated substrate
JP2015178237A (en) Laminated inorganic substrate, laminate, method of producing laminate and method of producing flexible electronic device
JP6332617B2 (en) Polyimide precursor film layer / inorganic substrate laminate, and method for producing the same, polyimide film layer / inorganic substrate laminate, and flexible electronic device
JP6848496B2 (en) Laminate
KR102476038B1 (en) Manufacturing method of polymer film laminated substrate and flexible electronic device
EP4039447A1 (en) Apparatus for manufacturing laminate and method for manufacturing laminate
TW201517220A (en) Method for producing flexible electronic device
JP6955681B2 (en) Laminated body and method for manufacturing the laminated body
WO2022034809A1 (en) Laminate, method for manufacturing laminate, and method for manufacturing flexible electronic device
WO2022113415A1 (en) Laminate