TW201234444A - Peeling system, peeling method, and computer storage medium - Google Patents

Peeling system, peeling method, and computer storage medium Download PDF

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Publication number
TW201234444A
TW201234444A TW100129958A TW100129958A TW201234444A TW 201234444 A TW201234444 A TW 201234444A TW 100129958 A TW100129958 A TW 100129958A TW 100129958 A TW100129958 A TW 100129958A TW 201234444 A TW201234444 A TW 201234444A
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Taiwan
Prior art keywords
substrate
processed
peeling
wafer
cleaning
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TW100129958A
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Chinese (zh)
Inventor
Osamu Hirakawa
Naoto Yoshitaka
Masataka Matsunaga
Norihiko Okamoto
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Tokyo Electron Ltd
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Publication of TW201234444A publication Critical patent/TW201234444A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

A peeling station of a peeling system comprises: a peeling apparatus for peeling a superimposed substrate; a first washing apparatus for washing a substrate to be processed that was peeled off; a second conveying apparatus for conveying the substrate to be processed between the peeling apparatus and the first washing apparatus; and a second washing apparatus for washing a support substrate that was peeled off. The second conveying apparatus comprises: a support plate that supports a joining face of the substrate to be processed, and upon which is formed a supply opening for supplying washing liquid to the joining face of the substrate to be processed; a holding member for holding a non-joining face of the substrate to be processed; and a reversing mechanism for reversing the front/back faces of the support substrate, and the substrate to be processed supported by the holding member.

Description

201234444 六、發明說明： 【發明所屬之技術領域】 本發明係關於將重合基板剝離成被處理基板和支撐基 板之剝離系統、使用該剝離系統之剝離方法、程式及電腦 記憶媒體。 【先前技術】 近年來：在例如半導體裝置之製造過程中：朝向半導 體晶圓（以下：稱爲「晶圓」）之大口徑化發展。再者：在 安裝等之特定工程中：要求晶圓之薄型化：當直接地搬運 例如大口徑且薄的晶圓：或進行硏磨處理時：則有在晶圓 產生翹曲或破裂之虞。因此：例如爲了補強晶圓：進行將 晶圓貼在例如支撐基板的晶圓或玻璃基板。然後：在如此 地接合晶圓和支撐基板之狀態下進行晶圓之硏磨處理等之 特定處理之後：晶圓和支撐基板被剝離。 如此之晶圓和支撐基板係使用如剝離裝置而進行。剝 離裝置具有保持例如晶圓之第1保持器：和保持支撐基板 之第2保持器：和將液體噴射至晶圓和支撐基板之間的噴 嘴。然後：該剝離裝置係從噴嘴對被接合之晶圓和支撐基 板之間：以較該晶圓和支撐基板之間的接合強度大之噴射 壓：最佳爲較接合強度大兩倍以上之噴射壓：噴射液體： 依此進行晶圓和支撐基板之剝離（專利文獻1)。 [先行技術文獻] [專利文獻] -5- 201234444 [專利文獻1]日本特開平9- 1 67724號公報 【發明內容】 [發明所欲解決之課題] 然而：晶圓和支撐基板之剝離處理係如上述般剝離晶 圓和支撐基板之後：各洗淨該些晶圓之接合面和支撐基板 之接合面而結束。 但是：於使用專利文獻1所記載之剝離裝置之時：必 須以個別之裝置進行如此之晶圓和支撐基板之洗淨：但是 完全無考慮到效率佳地進行如此一連串之剝離處理。因此 :剝離處理全體之處理量有改善之餘地。 本發明係鑒於如此之點而硏究出：其目的爲效率佳地 進行被處理基板和支撐基板之剝離處理：提升該剝離處理 之處理量。 [用以解決課題之手段] 爲了達成上述目的：本發明係用以將以接著劑接合被 處理基板和支撐基板的重合基板剝離成被處理基板和支撐 基板的剝離裝置：其特徵爲：具有剝離處理台：其係用以 對被處理基板、支撐基板及重合基板進行特定處理；搬入 搬出台：其係對上述剝離處理台：搬入搬出被處理基板、 支撐基板或重合基板；和第1搬運裝置：其係在上述剝離 處理台和上述搬入搬出台之間：搬運被處理基板、支撐基 板或重合基板：上述剝離處理台具有：剝離裝置：其係用 -6 - 201234444 以將重合基板剝離成被處理基板和支撐基板；第1洗淨裝 置：其係用以洗淨在上述剝離裝置被剝離之被處理基板； 第2洗淨裝置：其係用以洗淨在上述剝離裝置被剝離之支 撐基板；第2搬運裝置：其係用以在上述剝離裝置和上述 第1洗淨裝置之間搬運被處理基板：上述第2搬運裝置具 有：支撐板：其係用以支撐在被處理基板附著有接著劑之 接合面：並且形成有對被處理基板之接合面供給洗淨液之 供給口；保持構件：其係用以保持在被處理基板中不附著 接著劑之非接合面；及反轉機構：其係使以上述支撐板和 上述保持構件中所支撐之被處理基板之表背面予以反轉》 若藉由本發明之剝離系統時：在剝離裝置將重合基板 剝離成被處理基板和支撐基板之後：可以在第1洗淨裝置 中：洗淨被剝離之被處理基板：並且在第2洗淨裝置中洗 淨被剝離之支撐基板。如此一來：若藉由本發明時：可以 在一個剝離系統內：有效地進行從被處理基板和支撐基板 之剝離至被處理基板之洗淨和支撐基板之洗淨爲止的一連 串剝離處理。再者：在第1洗淨裝置和第2洗淨裝置中： 各可以並行進行被處理基板之洗淨和支撐基板之洗淨。並 且：在剝離裝置中：於剝離被處理基板和支撐基板之期間 :亦可以在第1洗淨裝置和第2洗淨裝置之中處理另外之 被處理基板和支撐基板。因此可以效率佳地進行被處理基 板和支撐基板之剝離處理：提升該剝離處理之處理量。 再者：於將剝離裝置被剝離之被處理基板搬運至第1 洗淨裝置之時：使用上述第2搬運裝置。即是：藉由支撐 7- 201234444 板將被處理基板從剝離裝置搬出之後：以支撐板和保持構 件夾著被處理基板而予以支撐：使該被處理基板之表背面 予以反轉：將被處理基板搬運至第1洗淨裝置。然後：可 以在第1洗淨裝置中：從支撐板之供給口供給洗淨液：洗 淨被處理基板之接合面和支撐板。如此一來：因可以以第 2搬運裝置洗淨被處理基板：故可以縮短之後之第1洗淨 裝置中之被處理基板之洗淨時間：並且又可以以提升剝離 處理之處理量。而且：因也可以洗淨支撐板：故可以適當 搬運下一個被處理基板。 上述第2搬運裝置即使具有在上述剝離裝置和上述第 1洗淨裝置之間使上述支撐板移動之第1移動機構··和在 上述剝離裝置和上述第1洗淨裝置之間使上述保持構件移 動之第2移動機構亦可。 上述保持構件即使爲白努力吸盤亦可。 上述剝離系統即使在上述剝離處理台：和對在該剝離 處理台被剝離之被處理基板進行特定之後處理之後處理台 之間：具有搬運被處理基板之介面台亦可。 藉由另外之觀點的本發明：係使用剝離系統：將以接 著劑接合被處理基板和支撐基板之重合基板：剝離成被處 理基板和支撐基板的剝離方法：其特徵爲：上述剝離系統 具有：剝離處理台：其係用以對被處理基板、支撐基板及 重合基板進行特定處理；搬入搬出台：其係對上述剝離處 理台：搬入搬出被處理基板、支撐基板或重合基板；和第 1搬運裝置：其係在上述剝離處理台和上述搬入搬出台之 -8- 201234444 間：搬運被處理基板、支撐基板或重合基板：上述剝離處 理台具有：剝離裝置：其係用以將重合基板剝離成被處理 基板和支撐基板；第1洗淨裝置：其係用以洗淨在上述剝 離裝置被剝離之被處理基板；第2洗淨裝置：其係用以洗 淨在上述剝離裝置被剝離之支撐基板；第2搬運裝置：其 係用以在上述剝離裝置和上述第1洗淨裝置之間搬運被處 理基板：上述第2搬運裝置具有：支撐板：其係用以支撐 在被處理基板附著有接著劑之接合面：並且形成有對被處 理基板之接合面供給洗淨液之供給口；保持構件：其係用 以保持在被處理基板中不附著接著劑之非接合面；及反轉 機構：其係使以上述支撐板和上述保持構件中所支撐之被 處理基板之表背面予以反轉：上述剝離方法具有：剝離工 程：其係用以在上述剝離裝置中：將重合基板剝離成被處 理基板和支撐基板：搬運工程：：其係用以藉由上述第2搬 運裝置：將在上述剝離工程中被剝離之被處理基板從上述 剝離裝置搬運至上述第1洗淨裝置；第1洗淨工程：其係 用以在上述第1洗淨裝置中：洗淨在上述搬運工程中被搬 運之被處理基板；和第2洗淨工程：其係用以在上述第2 洗淨裝置中：洗淨在上述剝離工程中被剝離之支撐基板； 上述搬運工程係藉由上述支撐板：將在上述剝離工程中被 剝離之被處理基板從上述剝離裝置搬出：之後：以上述支 撐板和上述保持構件夾著被處理基板而予以支撐：使該被 處理基板之表背面予以反轉：之後：將被處理基板搬運至 上述第1洗淨裝置：並且在該第1洗淨裝置中：從上述支 9- 201234444 撐板之供給口供給洗淨液：並且洗淨被處理基板之接合面 和上述支撐板。 上述剝離系統即使在上述剝離處理台：和對在該剝離 處理台被剝離之被處理基板進行特定之後處理之後處理台 之間：具有搬運被處理基板之介面台：上述剝離方法於上 述第1洗淨工程後：具有在上述後處理台中對被處理基板 進行後處理之後處理工程亦可。 再者：若藉由另外觀點的本發明時··則提供爲了藉由 剝離系統實行上述剝離方法：在控制該剝離裝置之控制部 之電腦上進行動作的程式。 若藉由又一另外觀點的本發明時：則提供儲存上述程 式之電腦可讀取之記憶媒體。 作爲參考例之剝離系統係將以接著劑接合被處理基板 和支撐基板之重合基板：剝離成被處理基板和支撐基板的 剝離方法：其特徵爲具有；對被處理基板、支撐基板及重 合基板進行特定處理之剝離處理台；對上述剝離處理台： 搬入搬出被處理基板、支撐基板或重合基板之搬入搬出台 ;及在上述剝離處理台和上述搬入搬出台之間：搬運被處 理基板、支撐基板或重合基板之第1搬運裝置：上述剝離 處理台具有：將重合基板剝離成被處理基板和支撐基板之 剝離裝置；洗淨在上述剝離裝置被剝離之被處理基板之第 1洗淨裝置；洗淨在上述剝離裝置被剝離之支撐基板的第 2洗淨裝置；及在上述剝離裝置和上述第1洗淨裝置之間 搬運被處理基板之第2搬運裝置：上述第2搬運裝置具有 -10- 201234444 以非接觸狀態保持被處理基板之保持板；被設置在上述保 持板之外周：被上述保持板保持之被處理基板的導件；及 使被保持於上述保持板之被處理基板之表背面反轉之反轉 機構。 在上述參考例之剝離系統中：即使上述導件對上述保 持板接離自如亦可。再者：即使從上述保持板噴出被溫度 調整成特定溫度之氣體亦可。再者：即使從上述保持板噴 出含離子之氣體亦可。再者：即使從上述保持板噴出惰性 氣體亦可。 [發明效果] 若藉由本發明時：則可效率佳地進行被處理基板和支 撐基板之剝離處理：提升該剝離處理之處理量。 【實施方式】 以下：針對本發明之實施形態予以說明。第1圖爲表 示與本實施形態有關之剝離系統1之構成槪略的俯視圖。 在剝離系統1中：如第2圖所示般：將當作重合基板 之重合晶圓T剝離成被處理晶圓W和支撐晶圓s :且該重 合基板係以接著劑G接合當作被處理基板之被處理晶圓w 和當作支撐基板之支撐晶圓S。以下··在被處理晶圓w中 :將經接著劑G而與支撐晶圓S接合之面稱爲「接合面 Wj」：將與該接合面W】相反側之面稱爲「非接合面wN」 。同樣：在支撐晶圓S中：將經接著劑G而與被處理晶圓 11- 201234444 w接合之面稱爲「接合面心」：且將與該接合面L相反 側之面稱爲「非接合面SN」。並且：被處理晶圓W爲成 爲製品之晶圓：在例如接合面W;形成複數之電子電路。 再者：被處理晶圓W係例如非接合面WN被硏磨處理：且 被薄型化（例如：厚度爲50μιη)。支撐晶圓s具有與被處理 晶圓W之直徑相同之直徑：爲支撐該被處理晶圓w之晶 圓。並且：在本實施形態中：雖然係針對使用晶圓當作支 撐基板之情形予以說明：但是即使使用例如玻璃基板等之 其他基板亦可》 剝離系統1係如第1圖所示般：具有將下述構件連接 成一體之構成：例如在與外部之間搬入搬出各可收容複數 之被處理晶圓W、複數之支撐晶圓S、複數之重合晶圓Τ 之卡匣CW、CS、CT的搬入搬出台2;對被處理晶圓W、 支撐晶圓S、重合晶圓T施予特定處理之各種處理裝置的 剝離處理台3 ;和在與剝離處理台3鄰接之後處理台4之 間進行被處理晶圓W之收授的介面台5。 搬入搬出台2和剝離處理台3係排列配置在X方向（ 第1圖中之上下方向）。在該些搬入搬出台2和剝離處理 台3之間：形成有晶圓搬運區域6。再者：介面台5係被 配置在搬入搬出台2、剝離處理台3及晶圓搬運區域6之 Y方向負方向側（第1圖中之左方向側）。 在搬入搬出台2:設置有卡匣載置台10。在卡匣載置 台10設置有複數例如三個卡匣載置板11。卡匣載置板11 係在Y方向（第1圖中之左右方向）排列配置成一列。在該 -12- 201234444 些卡匣載置板1 1 :於對剝離系統1之外部搬入搬出卡匣 cw、Cs、CT之時：可以載置卡匣，cw、cs、CT。如此一來 搬入搬出台2係被構成能夠保有複數之被處理晶圓w、複 數之支撐晶圓S、複數之重合晶圓T：。並且：卡匣載置板 11之個數並不限定於本實施形態：可以任意決定。再者： 對被搬入至搬入搬出台2之複數之重合晶圓T事先進行檢 查：被判別成含正常之被處理晶圓W之重合晶圓T和包 含具有缺陷之被處理晶圓W之重合晶圓T。 在晶圓搬運區域6配置有第1搬運裝置20。第1搬運 裝置20具有在例如垂直方向、水平方向（γ方向、X方向） 及繞垂直軸移動自如之搬運臂。第1搬運裝置20係在晶 圓搬運區域6內移動：可以在搬入搬出台2和剝離處理台 3之間搬運被處理晶圓W、支撐晶圓S、重合晶圓T。 剝離處理台3具有將重合晶圓T剝離成被處理晶圓W 和支撐晶圓S之剝離裝置3 0。在剝離裝置3 0之Y方向負 方向側（第1圖中之左方向側）：配置有洗淨被剝離之被處 理晶圓W的第1洗淨裝置31。在剝離裝置30和第1洗淨 裝置31之間：設置有第2搬運裝置32。再者：在剝離裝 置30之Y方向正方向側（第〗圖中之右方向側）：配置有 洗淨被剝離之支撐晶圓S的第2洗淨裝置33。如此一來 :在剝離處理台3:第1洗淨裝置31、第2搬運裝置32、 剝離裝置3 0、第2洗淨裝置3 3係由介面台5側依此順序 被配置。 在介面台5:設置有在延伸於X方向之搬運路40上 13- 201234444 移動自如之第3搬運裝置41。第3搬運裝置41也在垂直 方向及繞垂直軸（Θ方向）移動自如：在剝離處理台3和後 處理台4之間可以搬運被處理晶圓W。 並且：在後處理台4中：對在剝離處理台3被剝離之 被處理晶圓W進行特定之後處理。就以特定之後處理而 言：進行例如安裝被處理晶圓W之處理或進行被處理晶 圓W上之電子電路之電性特性之檢查的處理、將被處理 晶圓W切割成每個晶片之處理等。 接著：針對上述剝離裝置3 0之構成予以說明。剝離 裝置3 0係如第3圖所示般：具有能夠密閉內部之處理容 器1〇〇。在處理容器1〇〇之側面：形成有被處理晶圓W、 支撐晶圓S、重合晶圓T之搬入搬出口（無圖示）：在該搬 入搬出口設置有開關快門（無圖示）》 在處理容器100之底面：形成有吸引該處理容器100 之內部之氛圍的吸氣口 101。在吸氣口 101:連接有與例 如真空泵等之負壓產生裝置102連通之吸氣管103。 在處理容器100之內部：設置有在下面吸附保持被處 理晶圓W之第1保持部110:和在上面載置支撐晶圓S之 第2保持部111»第1保持部110係被設置在第2保持部 111之上方：被配置成與第2保持部111相向。即是：在 處理容器1 〇〇之內部·_將被處理晶圓W配置在上側：並 且將支撐晶圓S配置在下側之狀態下：對重合晶圓T進行 剝離處理。 第1保持部110使用例如多孔性吸盤。第1保持部 -14- KJ 1 201234444 110具有平板狀之本體部120。在本體部120之下面側設 置有多孔質體121。多孔質體121具有例如與被處理晶圓 W幾乎相同之直徑：與該被處理晶圓W之非接合面WN抵 接。並且：就以多孔質體121而言：使用例如碳化矽。 再者：在本體部120之內部：於多孔質體121之上方 形成有吸引空間1 22。吸引空間1 22係被形成覆蓋例如多 孔質體121。在吸引空間122連接有吸引管123。吸引管 123連接於例如真空泵等之負壓產生裝置（無圖示）。然後 :從吸引管123經吸引空間122和多孔質體121而吸引被 處理晶圓之非接合面WN :該被處理晶圓W被吸附保持於 第1保持部1 10。 再者：在本體部120之內部：吸引空間122之上方： 設置有加熱被處理晶圓W之加熱機構124。加熱機構124 使用例如加熱器。 在第1保持部110之上面設置有支撐該第1保持部 110的支撐板130。支撐板130係被支撐於處理容器100 之頂棚面。並且：省略本實施形態之支撐板1 3 0 :第1保 持部Π0即使抵接於處理容器100之頂棚面而被支撐亦可 〇 在第2保持部111之內部：設置有用以吸附保持支撐 晶圓S之吸引管140。吸引管140連接於例如真空泵等之 負壓產生裝置（無圖示）。 再者：在第2保持部111之內部：設置有加熱支撐晶 圓S之加熱機構1 4 1。加熱機構1 4 1使用例如加熱器。 -15- 201234444 在第2保持部111之下方：設置有使第2保持部111 及支撐晶圓S在垂直方向及水平方向移動之移動機構150 。移動機構150具有使第2保持部111在垂直方向移動之 垂直移動部151:和使第2保持部111在水平方向移動之 水平移動部1 52。 垂直移動部151具有支撐第2保持部111之下面的撐 板160:和使支撐板160升降之驅動部161:和支撐支撐 板1 60之支撐構件1 62。驅動部1 6 1具有例如滾珠螺桿（無 圖示）和使該滾珠螺桿轉動之馬達（無圖示）。再者：支撐構 件162係被構成在垂直方向伸縮自如：在支撐板160和後 述支撐體1 7 1之間設置例如3處。 水平移動部152具有沿著X方向（第3圖中之左右方 向）而延伸之軌道170:和安裝於軌道170之支撐體171: 和使支撐體171沿著軌道170移動之驅動部172。驅動部 172具有例如滾珠螺桿（無圖示）和使該滾珠螺桿轉動之馬 達（無圖示）。 並且：在第2保持部111之下方：設置有從下方支撐 重合晶圓T或支撐晶圓S並使升降之升降銷（無圖示）。升 降銷係插通被形成在第2保持部111之貫通孔（無圖示）： 成爲能夠從第2保持部111之上面突出。 接著：針對上述第1洗淨裝置31之構成予以說明》 第1洗淨裝置31具有如第4圖所示般能夠密閉內部之處 理容器180。在處理容器180之側面：形成有被處理晶圓 W之搬入搬出口（無圖示）：在該搬入搬出口設置有開關快 -16- 201234444 門（無圖示）。 在處理容器180內之中央部：設置有保持被處理晶圓 W而旋轉之多孔性吸盤1 90。多孔性吸盤1 90具有平板狀 之本體部1 9 1 :和被設在本體部1 9 1之上面側的多孔質體 1 92。多孔質體1 92具有例如與被處理晶圓W幾乎相同之 直徑：與該被處理晶圓W之非接合面WN抵接。並且：就 以多孔質體1 92而言：使用例如碳化矽。在多孔質體1 92 連接吸引管（無圖示）：藉由從該吸引管經多孔質體192吸 引被處理晶圓W之非接合面WN :可以將該被處理晶圓W 吸附保持在多孔性吸盤1 90上。 在多孔性吸盤1 90之下方：設置有具備有例如馬達等 之吸盤驅動部1 93。多孔性吸盤1 90可以藉由吸盤驅動部 193以特定速度旋轉。再者：在吸盤驅動部193設置有例 如汽缸等之升降驅動源：多孔性吸盤1 90成爲升降自如。 在多孔性吸盤190之周圍：設置有接取、回收從被處 理晶圓W飛散或落下之液體的杯體194。在杯體194之下 面：連接有排出回收之液體的排出管1 95 :和對杯體1 94 內之氛圍抽真空而予以排氣之排氣管196。 如第5圖所示般：在杯體194之X方向負方向（第5 圖中之下方向）側：形成有沿著Y方向（第5圖中之左右方 向）而延伸之軌道200。軌道200係從例如杯體194之γ 方向負方向（第5圖中之左方向）側之外方形成至Y方向正 方向（第5圖中之右方向）側之外方。在軌道200安裝有機 械臂201。 -17- 201234444 在機械臂201如第4圖及第5圖所示般支撐有對被處 理晶圓W供給洗淨液：例如有機溶劑之洗淨液噴嘴203。 機械臂201係如第5圖所示：藉由噴嘴驅動部204在軌道 200上移動自如。依此：洗淨液噴嘴203係可以從被設置 在杯體194之Y方向正方向側之外方的待機部205移動至 杯體194內之被處理晶圓W之中心部上方：並且可以在 該被處理晶圓W上移動至被處理晶圓W之直徑方向。再 者：機械臂201係藉由噴嘴驅動部204升降自如：可以調 節洗淨液203之高度。 洗淨液噴嘴2 0 3使用例如2流體噴嘴。洗淨液噴嘴 203係如第4圖所示般：連接有對該洗淨液噴嘴203供給 洗淨液之供給管2 1 0。供給管2 1 0連通在內部貯留洗淨液 之洗淨液供給源2 1 1。供給管2 1 0 :設置有含有控制洗淨 液之流動的閥或流量調節部等之供給機器群212。再者： 在洗淨液噴嘴203連接有對該洗淨液噴嘴203供給惰性氣 體：例如氮氣之供給管2 1 3。供給管2 1 3連通在內部貯留 惰性氣體之氣體供給源2 1 4。供給管2 1 3 :設置有含有控 制惰性氣體之流動的閥或流量調節部等之供給機器群2 1 5 。然後：洗淨液和惰性氣體在洗淨液噴嘴203內混合：從 該洗淨液噴嘴2 03被供給至被處理晶圓w。並且：在以下 中：有將混合洗淨液和惰性氣體單稱爲「洗淨液」之情形 〇 並且：在多孔性吸盤1 90之下方：即使設置用以從下 方支撐被處理晶圓W:並予以升降之升降銷（無圖示）亦可201234444 SUMMARY OF THE INVENTION [Technical Field] The present invention relates to a peeling system for peeling a superposed substrate into a substrate to be processed and a supporting substrate, a peeling method using the peeling system, a program, and a computer memory medium. [Prior Art] In recent years, for example, in the manufacturing process of a semiconductor device, a large diameter has progressed toward a semiconductor wafer (hereinafter referred to as "wafer"). Furthermore: in a specific project such as installation: thinning of the wafer is required: when directly transporting, for example, a large-diameter and thin wafer: or performing honing: there is warpage or cracking in the wafer. . Therefore, for example, in order to reinforce the wafer: a wafer or a glass substrate on which the wafer is attached, for example, to a support substrate. Then, after the specific processing such as honing of the wafer is performed in a state where the wafer and the supporting substrate are bonded in this manner, the wafer and the supporting substrate are peeled off. Such a wafer and a supporting substrate are used using, for example, a peeling device. The stripping device has a first holder that holds, for example, a wafer: and a second holder that holds the support substrate: and a nozzle that ejects liquid between the wafer and the support substrate. Then: the stripping device is from the nozzle pair between the bonded wafer and the supporting substrate: a jetting pressure greater than the bonding strength between the wafer and the supporting substrate: preferably a jet that is more than twice the joint strength Pressure: Spraying liquid: Peeling of the wafer and the supporting substrate is carried out in accordance therewith (Patent Document 1). [Patent Document] - 5 - 201234444 [Patent Document 1] Japanese Laid-Open Patent Publication No. Hei 9- 1 67724 [Disclosed] [Problems to be Solved by the Invention] However, the peeling treatment of the wafer and the supporting substrate is After the wafer and the support substrate are peeled off as described above, the joint faces of the bonding surfaces of the wafers and the support substrate are washed and finished. However, when the peeling device described in Patent Document 1 is used, it is necessary to perform cleaning of such a wafer and a supporting substrate by an individual device: but such a series of peeling treatments are performed without considering efficiency. Therefore, there is room for improvement in the throughput of the entire stripping process. The present invention has been made in view of the point that the purpose of the present invention is to efficiently perform a peeling treatment of a substrate to be processed and a supporting substrate: to increase the amount of processing of the peeling treatment. [Means for Solving the Problem] In order to achieve the above object, the present invention is a peeling device for peeling a superposed substrate on which a substrate to be processed and a support substrate are bonded by an adhesive to a substrate to be processed and a support substrate: characterized in that it has peeling a processing table for performing specific processing on a substrate to be processed, a supporting substrate, and a superposed substrate; and a loading/unloading station for loading and unloading the substrate to be processed, a supporting substrate or a superposed substrate; and a first conveying device Between the peeling processing station and the loading/unloading stage: transporting the substrate to be processed, the supporting substrate, or the superposed substrate: the peeling processing station has a peeling device: -6 - 201234444 is used to peel the superposed substrate into Processing the substrate and the support substrate; the first cleaning device for cleaning the substrate to be processed which is peeled off by the peeling device; and the second cleaning device for cleaning the support substrate on which the peeling device is peeled off a second conveying device for conveying a substrate to be processed between the peeling device and the first cleaning device: the second The transport device has: a support plate for supporting a joint surface to which an adhesive is adhered to the substrate to be processed: and a supply port for supplying a cleaning liquid to the joint surface of the substrate to be processed; and a holding member for holding a non-joining surface in which an adhesive is not adhered to the substrate to be processed; and a reversing mechanism for reversing the front and back surfaces of the substrate to be processed supported by the support plate and the holding member, if peeled off by the present invention In the system: after the peeling device peels the superposed substrate into the substrate to be processed and the supporting substrate: in the first cleaning device, the peeled substrate to be processed may be washed: and the second cleaning device is washed and peeled off. Support the substrate. As a result, according to the present invention, it is possible to efficiently carry out a series of peeling treatment from the peeling of the substrate to be processed and the supporting substrate to the cleaning of the substrate to be processed and the cleaning of the supporting substrate in one peeling system. Further, in the first cleaning device and the second cleaning device: the substrate to be processed can be washed and the support substrate can be washed in parallel. Further, in the peeling apparatus, during the process of peeling off the substrate to be processed and the supporting substrate: the other processed substrate and the supporting substrate may be processed in the first cleaning device and the second cleaning device. Therefore, the peeling treatment of the substrate to be processed and the supporting substrate can be performed efficiently: the processing amount of the peeling treatment is increased. Further, when the substrate to be processed from which the peeling device is peeled off is transported to the first cleaning device, the second transport device is used. That is, after the substrate to be processed is carried out from the peeling device by supporting the 7-201234444 plate: the support plate and the holding member are supported by sandwiching the substrate to be processed: the front and back surfaces of the substrate to be processed are reversed: will be processed The substrate is transported to the first cleaning device. Then, in the first cleaning device, the cleaning liquid may be supplied from the supply port of the support plate: the bonding surface of the substrate to be processed and the support plate may be cleaned. In this way, since the substrate to be processed can be cleaned by the second transporting device, the cleaning time of the substrate to be processed in the first cleaning device can be shortened: and the processing amount of the peeling treatment can be increased. Moreover: since the support plate can also be cleaned: the next substrate to be processed can be handled appropriately. The second conveying device has a first moving mechanism that moves the support plate between the peeling device and the first cleaning device, and a holding member between the peeling device and the first cleaning device. The second mobile mechanism that moves can also be used. The above holding member may be a suction cup even if it is white. The peeling system may have a interface table for transporting the substrate to be processed between the processing stations after the peeling processing table and the substrate to be processed which is peeled off from the peeling processing table. According to another aspect of the present invention, a peeling system is used: a superposed substrate in which a substrate to be processed and a supporting substrate are bonded by an adhesive: a peeling method of peeling off into a substrate to be processed and a supporting substrate: the peeling system has: a peeling treatment table for performing a specific treatment on a substrate to be processed, a support substrate, and a superposed substrate; and a loading/unloading station for loading and unloading the substrate to be processed, a supporting substrate or a superposed substrate; and the first conveying The device is disposed between the peeling processing station and the loading/unloading station -8-201234444: transporting the substrate to be processed, the supporting substrate, or the superposed substrate: the peeling processing station has a peeling device for peeling off the superposed substrate into a substrate to be processed and a support substrate; a first cleaning device for cleaning the substrate to be processed which is peeled off by the peeling device; and a second cleaning device for cleaning the support for peeling off the peeling device a substrate; a second conveying device for conveying the substrate to be processed between the peeling device and the first cleaning device: The second conveying device includes a support plate for supporting a bonding surface to which an adhesive is adhered to a substrate to be processed, and a supply port for supplying a cleaning liquid to a bonding surface of the substrate to be processed, and a holding member: a non-joining surface for holding the adhesive agent on the substrate to be processed; and a reversing mechanism for reversing the front and back surfaces of the substrate to be processed supported by the support plate and the holding member: the peeling method Having a peeling process: in the above-mentioned peeling apparatus: peeling a superposed substrate into a to-be-processed board|substrate and a support board: handling|transportation: It is used by the said 2nd conveyance apparatus: It is the The peeled substrate to be processed is transported from the peeling device to the first cleaning device, and the first cleaning device is used to wash the substrate to be processed that is transported in the transporting project in the first cleaning device. And a second cleaning process for cleaning the support substrate that was peeled off in the peeling process in the second cleaning device; a plate: the substrate to be processed which has been peeled off in the peeling process is carried out from the peeling device: after the support plate and the holding member are supported by the substrate to be processed: the front and back surfaces of the substrate to be processed are reversed After that: the substrate to be processed is transported to the first cleaning device: and in the first cleaning device, the cleaning liquid is supplied from the supply port of the support 9-201234444, and the bonding of the substrate to be processed is washed. Face and the above support plate. The peeling system has a mesa table for transporting a substrate to be processed between the processing station and the processing table after the processing of the substrate to be processed which is peeled off at the peeling processing table: the peeling method is the first washing After the net engineering: the processing may be performed after the post-processing of the substrate to be processed in the post-processing station. Further, according to another aspect of the present invention, there is provided a program for performing the above-described peeling method by a peeling system: a computer operating on a computer that controls the control unit of the peeling device. In the case of the present invention by still another aspect, a computer readable memory medium storing the above method is provided. A peeling system as a reference example is a method in which a superposed substrate on which a substrate to be processed and a supporting substrate are bonded by an adhesive is peeled off into a substrate to be processed and a supporting substrate: it is characterized in that it has a substrate to be processed, a supporting substrate, and a superposed substrate. a peeling treatment station for a specific treatment; the peeling processing station: a loading/unloading table for loading and unloading a substrate to be processed, a supporting substrate, or a superposed substrate; and transferring the substrate to be processed and the supporting substrate between the peeling processing table and the loading/unloading table Or a first conveying device for superimposing a substrate: the peeling processing station includes: a peeling device that peels the laminated substrate into a substrate to be processed and a supporting substrate; and a first cleaning device that washes the substrate to be processed in which the peeling device is peeled off; a second cleaning device that cleans the support substrate from which the peeling device is peeled off; and a second transport device that transports the substrate to be processed between the peeling device and the first cleaning device: the second transport device has a -10- 201234444 Holding the holding plate of the substrate to be processed in a non-contact state; being disposed outside the above holding plate The holding plate is holding the guide member to be processed of the substrate; and a reversing mechanism so that the holding plate front and rear surfaces of the substrate to be processed is held at the reverse of. In the peeling system of the above reference example, even if the above-mentioned guide member is free from the above-mentioned holding plate. Further, even if a gas whose temperature is adjusted to a specific temperature is ejected from the above holding plate. Furthermore, even if a gas containing ions is ejected from the above holding plate. Furthermore, even if an inert gas is ejected from the above holding plate. [Effect of the Invention] According to the present invention, the peeling treatment of the substrate to be processed and the supporting substrate can be performed efficiently: the amount of processing of the peeling treatment can be improved. [Embodiment] Hereinafter, embodiments of the present invention will be described. Fig. 1 is a plan view showing a schematic configuration of a peeling system 1 according to the present embodiment. In the peeling system 1, as shown in Fig. 2, the superposed wafer T as a superposed substrate is peeled off into a processed wafer W and a supporting wafer s: and the superposed substrate is bonded by an adhesive G The processed wafer w of the substrate and the supporting wafer S serving as a supporting substrate are processed. Hereinafter, in the wafer to be processed w, a surface to be bonded to the support wafer S via the adhesive G is referred to as a "joining surface Wj": a surface opposite to the bonding surface W is referred to as a "non-joining surface" wN". Similarly, in the support wafer S, a surface joined to the wafer to be processed 11-201234444 by the adhesive G is referred to as a "joining surface": and a surface opposite to the bonding surface L is referred to as "non- Joint surface SN". Further, the processed wafer W is a wafer which is a product: for example, a bonding surface W; and a plurality of electronic circuits are formed. Further, the wafer W to be processed, for example, the non-joining surface WN is honed and thinned (for example, the thickness is 50 μm). The support wafer s has the same diameter as the diameter of the wafer W to be processed: a crystal circle supporting the wafer w to be processed. Further, in the present embodiment, the case where the wafer is used as the supporting substrate will be described. However, even if another substrate such as a glass substrate is used, the peeling system 1 is as shown in Fig. 1 The following members are integrally connected to each other: for example, loading and unloading a plurality of processed wafers W, a plurality of supporting wafers S, and a plurality of overlapping wafers CW, CS, and CT are carried out between the outside and the outside. The loading/unloading station 2; the peeling processing station 3 that applies various processing devices for the specific processing of the processed wafer W, the supporting wafer S, and the superposed wafer T; and the processing table 4 after being adjacent to the peeling processing station 3 The interface table 5 of the wafer W to be processed. The loading/unloading table 2 and the peeling processing table 3 are arranged in the X direction (upward and downward directions in the first drawing). Between the loading/unloading stage 2 and the peeling processing stage 3, a wafer carrying area 6 is formed. Further, the interface table 5 is disposed on the negative direction side (the left direction side in the first drawing) of the loading/unloading table 2, the peeling processing table 3, and the wafer conveyance region 6 in the Y direction. The loading/unloading station 2 is provided with a cassette mounting table 10. A plurality of, for example, three cassette mounting plates 11 are provided on the cassette mounting table 10. The cassette mounting plates 11 are arranged in a line in the Y direction (the horizontal direction in the first drawing). In the -12-201234444, some of the cassette mounting plates 1 1 are placed on the outside of the peeling system 1 to carry in and out of the cassettes cw, Cs, and CT: cassettes, cw, cs, and CT can be placed. In this way, the loading/unloading station 2 is configured to hold a plurality of processed wafers w, a plurality of supporting wafers S, and a plurality of superposed wafers T:. Further, the number of the cassette mounting plates 11 is not limited to this embodiment: it can be arbitrarily determined. Further, the plurality of superposed wafers T that have been carried into the loading/unloading station 2 are inspected in advance: a coincidence of the coincident wafer T containing the normal processed wafer W and the wafer W containing the defective processed wafer W Wafer T. The first conveyance device 20 is disposed in the wafer conveyance region 6. The first conveyance device 20 has, for example, a conveyance arm that is movable in the vertical direction, the horizontal direction (γ direction, the X direction), and the vertical axis. The first conveying device 20 moves in the wafer transporting region 6 so that the processed wafer W, the supporting wafer S, and the superposed wafer T can be transported between the loading/unloading table 2 and the peeling processing table 3. The peeling processing station 3 has a peeling device 30 that peels the superposed wafer T into a processed wafer W and a supporting wafer S. On the negative side in the Y direction of the peeling device 30 (the left side in the first drawing): a first cleaning device 31 that cleans the peeled processed wafer W is disposed. Between the peeling device 30 and the first cleaning device 31, a second conveying device 32 is provided. Further, in the positive direction side of the Y-direction of the peeling device 30 (on the right side in the drawing): a second cleaning device 33 for washing the peeled supporting wafer S is disposed. In this manner, the peeling processing station 3: the first cleaning device 31, the second transport device 32, the peeling device 30, and the second cleaning device 3 are arranged in this order from the interface table 5 side. The interface table 5 is provided with a third transport device 41 that is freely movable on the transport path 40 extending in the X direction 13-201234444. The third conveying device 41 is also movable in the vertical direction and around the vertical axis (Θ direction): the processed wafer W can be conveyed between the peeling processing table 3 and the post-processing table 4. Further, in the post-processing station 4, the processed wafer W which has been peeled off at the peeling processing station 3 is subjected to a specific post-processing. For the specific post-processing, for example, a process of mounting the processed wafer W or performing an inspection of the electrical characteristics of the electronic circuit on the processed wafer W, and cutting the processed wafer W into each wafer Processing and so on. Next, the configuration of the above-described peeling device 30 will be described. The peeling device 30 is a processing container 1 that can seal the inside as shown in Fig. 3 . On the side of the processing container 1 : a processing wafer W, a supporting wafer S, and a loading/unloading port of the superposed wafer T (not shown) are formed: a switching shutter is provided at the loading/unloading port (not shown) The bottom surface of the processing container 100 is formed with an air inlet 101 that attracts the atmosphere inside the processing container 100. In the intake port 101: an intake pipe 103 connected to a negative pressure generating device 102 such as a vacuum pump is connected. Inside the processing container 100, a first holding portion 110 that adsorbs and holds the wafer W to be processed is placed: and a second holding portion 111 on which the supporting wafer S is placed is placed on the first holding portion 110. The upper side of the second holding portion 111 is disposed to face the second holding portion 111. That is, in the inside of the processing container 1, the wafer W to be processed is placed on the upper side: and the supporting wafer S is placed on the lower side: the superposed wafer T is subjected to a peeling treatment. For example, a porous chuck is used for the first holding portion 110. The first holding portion -14- KJ 1 201234444 110 has a flat body portion 120. A porous body 121 is provided on the lower surface side of the body portion 120. The porous body 121 has, for example, a diameter almost the same as that of the wafer W to be processed: it abuts against the non-joining surface WN of the wafer W to be processed. Further, in the case of the porous body 121, for example, tantalum carbide is used. Further, inside the main body portion 120, a suction space 1 22 is formed above the porous body 121. The attraction space 1 22 is formed to cover, for example, the porous body 121. A suction pipe 123 is connected to the suction space 122. The suction pipe 123 is connected to a negative pressure generating device (not shown) such as a vacuum pump. Then, the non-joining surface WN of the wafer to be processed is sucked from the suction pipe 123 through the suction space 122 and the porous body 121: the processed wafer W is adsorbed and held by the first holding portion 110. Further, inside the main body portion 120: above the suction space 122: a heating mechanism 124 for heating the processed wafer W is provided. The heating mechanism 124 uses, for example, a heater. A support plate 130 that supports the first holding portion 110 is provided on the upper surface of the first holding portion 110. The support plate 130 is supported on the ceiling surface of the processing container 100. Further, the support plate 1 3 0 of the present embodiment is omitted: the first holding portion Π0 is supported by the ceiling surface of the processing container 100 and can be supported inside the second holding portion 111: it is provided to adsorb and hold the supporting crystal The suction tube 140 of the circle S. The suction pipe 140 is connected to a negative pressure generating device (not shown) such as a vacuum pump. Further, inside the second holding portion 111: a heating mechanism 141 for heating the support wafer S is provided. The heating mechanism 141 uses, for example, a heater. -15- 201234444 Below the second holding portion 111: a moving mechanism 150 that moves the second holding portion 111 and the supporting wafer S in the vertical direction and the horizontal direction is provided. The moving mechanism 150 has a vertical moving portion 151 that moves the second holding portion 111 in the vertical direction and a horizontal moving portion 152 that moves the second holding portion 111 in the horizontal direction. The vertical moving portion 151 has a stay 160 that supports the lower surface of the second holding portion 111: a driving portion 161 that lifts and lowers the support plate 160: and a supporting member 162 that supports the support plate 160. The drive unit 161 has, for example, a ball screw (not shown) and a motor (not shown) that rotates the ball screw. Further, the support member 162 is configured to be stretchable in the vertical direction: for example, three places are provided between the support plate 160 and the support body 171 described later. The horizontal moving portion 152 has a rail 170 extending in the X direction (the right and left direction in Fig. 3): and a supporting body 171 attached to the rail 170: and a driving portion 172 for moving the supporting body 171 along the rail 170. The drive unit 172 has, for example, a ball screw (not shown) and a motor (not shown) that rotates the ball screw. Further, below the second holding portion 111, a lift pin (not shown) for supporting the wafer T or supporting the wafer S from below is provided. The lift pin is inserted through the through hole (not shown) formed in the second holding portion 111: it can protrude from the upper surface of the second holding portion 111. Next, the configuration of the first cleaning device 31 will be described. The first cleaning device 31 has the internal processing container 180 as shown in Fig. 4. On the side of the processing container 180: a loading/unloading port (not shown) of the processed wafer W is formed: a switch is provided at the loading/unloading port (not shown). In the central portion of the processing container 180, a porous chuck 1 90 that holds the wafer W to be processed is provided. The porous chuck 1 90 has a flat body portion 191 and a porous body 192 provided on the upper surface side of the body portion 191. The porous body 192 has, for example, a diameter almost the same as that of the wafer W to be processed: it abuts against the non-joining surface WN of the wafer W to be processed. Further, in the case of the porous body 192, for example, ruthenium carbide is used. A suction tube (not shown) is connected to the porous body 1 92: the non-joining surface WN of the wafer W to be processed is attracted from the suction tube through the porous body 192: the processed wafer W can be adsorbed and held in the porous state Sucking cup 1 90. Below the porous chuck 1 90: a chuck driving unit 193 provided with, for example, a motor or the like is provided. The porous chuck 1 90 can be rotated by the chuck driving portion 193 at a specific speed. Further, the suction cup driving unit 193 is provided with a lifting drive source such as a cylinder or the like: the porous suction cup 1 90 is freely movable. Around the porous chuck 190: a cup 194 that picks up and collects the liquid that has been scattered or dropped from the processed wafer W is provided. Below the cup 194, a discharge pipe 1 95 for discharging the recovered liquid is connected, and an exhaust pipe 196 for evacuating the atmosphere in the cup body 94 is exhausted. As shown in Fig. 5, in the negative direction (the lower direction in the fifth drawing) of the cup body 194 in the X direction: a rail 200 extending in the Y direction (the left and right directions in Fig. 5) is formed. The rail 200 is formed, for example, from the outside of the γ direction in the negative direction (the left direction in Fig. 5) of the cup body 194 to the outside in the Y direction (the right direction in Fig. 5). The arm 201 is mounted on the rail 200. -17-201234444 The robot arm 201 supports a cleaning liquid nozzle 203 for supplying a cleaning liquid such as an organic solvent to the processed wafer W as shown in Figs. 4 and 5 . The robot arm 201 is as shown in Fig. 5: the nozzle driving unit 204 is freely movable on the rail 200. According to this, the cleaning liquid nozzle 203 can be moved from the standby portion 205 provided outside the positive direction side of the cup body 194 in the Y direction to the upper portion of the processed wafer W in the cup body 194: The processed wafer W is moved to the diameter direction of the wafer W to be processed. Further, the robot arm 201 is lifted and lowered by the nozzle driving unit 204: the height of the cleaning liquid 203 can be adjusted. The cleaning liquid nozzle 203 uses, for example, a two-fluid nozzle. The cleaning liquid nozzle 203 is connected to a supply pipe 2 1 0 for supplying a cleaning liquid to the cleaning liquid nozzle 203 as shown in Fig. 4 . The supply pipe 210 is connected to the cleaning liquid supply source 21 1 which stores the cleaning liquid therein. Supply pipe 2 1 0 : A supply machine group 212 including a valve for controlling the flow of the cleaning liquid, a flow rate adjusting unit, and the like is provided. Further, a supply pipe 2 1 3 for supplying an inert gas such as nitrogen to the cleaning liquid nozzle 203 is connected to the cleaning liquid nozzle 203. The supply pipe 2 1 3 communicates with a gas supply source 2 1 4 in which an inert gas is stored. The supply pipe 2 1 3 is provided with a supply machine group 2 1 5 including a valve for controlling the flow of the inert gas or a flow rate adjusting unit. Then, the cleaning liquid and the inert gas are mixed in the cleaning liquid nozzle 203: supplied from the cleaning liquid nozzle 203 to the wafer w to be processed. Further, in the following, there is a case where the mixed cleaning liquid and the inert gas are referred to as "washing liquid" 〇 and: below the porous suction cup 1 90: even if it is provided to support the processed wafer W from below: Lifting pin (not shown)

-18- 201234444 。此時：升降銷係插通被形成在多孔性吸盤190之貫通孔 (無圖示）：成爲能夠從多孔性吸盤190之上面突出。然後 :使升降銷升降：以代替使多孔性吸盤190升降：在與多 孔性吸盤1 90之間進行被處理晶圓w之收授。 再者：第2洗淨裝置33之構成係與上述第1洗淨裝 置31之構成幾乎相同。在第2洗淨裝置33如第6圖所示 般設置有旋轉吸盤220 :以取代第1洗淨裝置3 1之多孔性 吸盤190。旋轉吸盤220具有水平之上面：在該上面設置 有吸引例如支撐晶圓S之吸引口（無圖式）。藉由來自該吸 引口之吸引：可以在旋轉吸盤220上吸附支撐晶圓S。再 者：第2洗淨裝置33之其他構成因與上述第1洗淨裝置 31之構成幾乎相同：故省略說明。 並且：在第2洗淨裝置3 :i中：於旋轉吸盤220之下 方：即使設置朝向支撐晶圓S之背面：即是非接合面SN 噴射洗淨液之背面沖洗噴嘴（無圖示）亦可。藉由從該背面 沖洗噴嘴噴射之洗淨液：支撐晶圓S之非接合面SN和支 撐晶圓S之外周部被洗淨。 接著：針對上述第2搬運裝置32之構成予以說明。 第2搬運裝置32係如第7圖所示般：具有支撐被處理晶 圓W之接合面W;的支撐板2 30 :和當作保持被處理晶圓 W之非接合面WN之保持構件的白努力吸盤231。 支撐板230之表面：係如第8圖所示般：在水平面內 均勻形成有用以供給洗淨液例如有機溶劑之複數之供給口 240。在複數之供給口 240 :設連接有如第9圖所示般被設 -19- 201234444 置在支撐板23 0之內部：對複數之供給口 240供給洗淨液 之供給管241。供給管241連通在內部貯留洗淨液之洗淨 液供給源242。藉由如此之構成：洗淨液從複數之供給口 240被供給至被處理晶圓W之接合面Wj。 支撐板230係如第7圖所示般被支撐臂243支撐。支 撐臂243係被支撐於第1驅動部244。藉由該第1驅動部 244 :支撐臂243係繞水平軸轉動自如：並且可以在水平 方向伸縮。在第1驅動部244之下方：設置有第2驅動部 245。藉由該第2驅動部245 :第1驅動部244繞垂直軸旋 轉自如：並且可以在垂直方向升降》 第2驅動部245係被安裝於軌道246。軌道246係如 第1圖所示般：被設置在剝離裝置30和第1洗淨裝置31 之X方向正方向側（第1圖中之上方向側）：在該剝離裝置 3 0和第1洗淨裝置3 1之間沿伸於Y方向（第1圖中之左 右方向）。然後：第2驅動部245係可在軌道246上移動 :支撐板230可在搬運裝置30和第1洗淨裝置31之間移 動。並且：支撐臂243、第1驅動部244、第2驅動部245 及軌道246構成本發明中之第1移動機構。 白努力吸盤231係如第10圖所示般：具有大於被處 理晶圓W之直徑：被構成大直徑之略3/4圓環狀。然後： 白努力吸盤23 1係藉由噴出空氣使被處理晶圓W之外周 部浮起：在非接觸之狀態下：可以使被處理晶圓W吸引 懸垂地予以保持。再者：白努力吸盤231具有大於第1洗 淨裝置3 1之多孔性吸盤19 0之直徑：如後述般：於從支-18- 201234444. At this time, the lift pin is inserted through the through hole (not shown) of the porous chuck 190: it can protrude from the upper surface of the porous chuck 190. Then: the lift pins are raised and lowered: instead of lifting the porous chuck 190: the processed wafer w is transferred between the porous chucks 190 and the porous chucks 190. Further, the configuration of the second cleaning device 33 is almost the same as the configuration of the first cleaning device 31 described above. As shown in Fig. 6, the second cleaning device 33 is provided with a rotary chuck 220 in place of the porous suction cup 190 of the first cleaning device 31. The spin chuck 220 has a horizontal upper surface on which a suction port (not shown) for attracting, for example, the support wafer S is disposed. By attracting from the suction port: the support wafer S can be adsorbed on the spin chuck 220. Further, the other configuration of the second cleaning device 33 is almost the same as that of the first cleaning device 31 described above: description thereof will be omitted. Further, in the second cleaning device 3: i: below the spin chuck 220: even if the back surface of the support wafer S is provided: that is, the back surface rinse nozzle of the non-joining surface SN spray cleaning liquid (not shown) . The cleaning liquid sprayed from the backside rinsing nozzle: the non-joining surface SN of the supporting wafer S and the outer peripheral portion of the supporting wafer S are washed. Next, the configuration of the second conveying device 32 will be described. The second transfer device 32 has a support plate 2 30 that supports the bonding surface W of the wafer W to be processed, and a holding member that serves as a non-joining surface WN for holding the wafer W to be processed, as shown in FIG. White hard sucker 231. The surface of the support plate 230 is as shown in Fig. 8: a plurality of supply ports 240 for supplying a cleaning liquid such as an organic solvent are uniformly formed in a horizontal plane. The plurality of supply ports 240 are connected to the inside of the support plate 23 0 as shown in Fig. 9 and are supplied to the supply port 240 of the plurality of supply ports 240. The supply pipe 241 communicates with the cleaning liquid supply source 242 that stores the cleaning liquid therein. With such a configuration, the cleaning liquid is supplied from the plurality of supply ports 240 to the joint surface Wj of the wafer W to be processed. The support plate 230 is supported by the support arm 243 as shown in Fig. 7. The support arm 243 is supported by the first drive unit 244. The first driving portion 244: the support arm 243 is rotatable about the horizontal axis: and can be expanded and contracted in the horizontal direction. Below the first drive unit 244: a second drive unit 245 is provided. The second driving unit 245: the first driving unit 244 is rotatable about a vertical axis: and can be vertically moved up and down. The second driving unit 245 is attached to the rail 246. As shown in Fig. 1, the rail 246 is provided on the positive side of the X direction of the peeling device 30 and the first cleaning device 31 (the upper direction side in the first drawing): at the peeling device 30 and the first The cleaning device 3 1 extends in the Y direction (the left and right direction in Fig. 1). Then, the second driving unit 245 is movable on the rail 246: the support plate 230 is movable between the conveying device 30 and the first cleaning device 31. Further, the support arm 243, the first drive unit 244, the second drive unit 245, and the rail 246 constitute the first moving mechanism in the present invention. The white-strength suction cup 231 is as shown in Fig. 10: has a diameter larger than that of the wafer W to be processed: a slightly 3/4 annular shape which is formed into a large diameter. Then, the white suction cup 23 1 floats the outer periphery of the processed wafer W by ejecting air: in the non-contact state, the wafer W to be processed can be held by the suspension. Further, the white working suction cup 231 has a larger diameter than the porous suction cup 19 of the first cleaning device 31: as will be described later:

-20- 201234444 撐板230和白努力吸盤231將被處理晶圓W收授於多孔 性吸盤1 90之時：白努力吸盤23 1和多孔性吸盤1 90不千 擾。 白努力吸盤231係如第7圖所示般被支撐臂2 5 0支撐 。支撐臂25 0係被支撐於第1驅動部251。藉由該第1驅 動部251 :支撐臂2 5 0係繞水平軸轉動自如：並且可以在 水平方向伸縮。在第1驅動部251之下方：設置有第2驅 動部252。藉由該第2驅動部252 :第1驅動部25 1繞垂 直軸旋轉自如：並且可以在垂茴方向升降。 第2驅動部252係被安裝於軌道25 3。軌道25 3係如 第1圖所示般：被設置在剝離裝置30和第1洗淨裝置31 之X方向負方向側（第1圖中之下方向側）：在該剝離裝置 3 0和第1洗淨裝置3 1之間沿伸於Y方向（第1圖中之左 右方向）。然後__第2驅動部25 2係可在軌道253上移動 :白努力吸盤23 1可在搬運裝置30和第1洗淨裝置31之 間移動。並且：支撐臂2 5 0、第1驅動部2 5 1、第2驅動 部252及軌道253構成本發明中之第2移動機構。 並且：在以上之第2搬運裝置32中：支撐臂243、 250及第1驅動部244、251構成本發明中之反轉機構。 並且：第3搬運裝置41因具有上述第2搬運裝置32 中之白努力吸盤231、支撐臂250、第1驅動部251及第2 驅動部252相同之構成：故省略說明。但是：第3搬運裝 置41之第2驅動部2 52係被安裝於第1圖所示之搬運路 40:第3搬運裝置41成爲能夠在搬運路40上移動。 -21 - 201234444 在以上之剝離系統1如第1圖所示般設置有控制部 3 00。控制部3 00例如爲電腦：具有程式儲存部（無圖示）。 程式儲存部儲存有剝離系統1中控制被處理晶圓W、支撐 晶圓S、重合晶圓T之處理之程式。再者··在程式儲存部 :也儲存有用以控制上述各種處理裝置或搬運裝置等之驅 動系統之動作：而實現剝離系統1中之後述的剝離處理的 程式。並且：上述程式爲記錄於例如電腦可讀取之硬碟 (HD)、軟碟（FD)、光碟（CD)、磁光碟（MO)、記憶卡等之電 腦可讀取之記憶媒體Η :即使爲從其記憶媒體Η被安裝至 控制部3 00者亦可。 接著：針對使用如上述般構成之剝離系統1而進行之 被處理晶圓W和支撐晶圓S之剝離處理方法予以說明。 第1 1圖爲表示如此剝離處理之主要工程之例的流程圖。 首先：收容有複數片之重合晶圓Τ之卡匣CT、空的 卡匣Cw及空的卡匣Cs被載置至搬入搬出台2之特定卡匣 載置板11。藉由第1搬運裝置20取出卡匣CT內之重合晶 圓T:被搬運至剝離處理台3之剝離裝置30。此時：重合 晶圓T係在將被處理晶圓W配置在上側··並且將支撐晶 圓S配置在下側之狀態被搬運。 被搬入至剝離裝置30之重合晶圓T係被吸附保持在 第2保持部111。之後：藉由移動機構150:使第2保持 部1 1 1上升：如第1 2圖所示般：以第1保持部1 1 0和第2 保持部111夾著重合晶圓T而予以保持。此時：在第1保 持部1 1 〇吸附保持被處理晶圓W之非接合面WN :在第2 -22- 201234444 保持部1 1 1吸附保持支撐晶圓s之非接合面sN » 之後：藉由加熱機構124、141，重合晶圓T被加熱 至特定溫度例如2 0 0 °C。如此一來：重合晶圓T中之接著 劑G軟化。 接著：一面藉由加熱機構124、141:加熱重合晶圓T 而維持接著劑G之軟化狀態：一面如第1 3圖所示般藉由 移動機構150使第2保持部111和支撐晶圓S在垂直方向 及水平方向：即是朝斜下方移動。然後：如第14圖所示 般：被保持於第1保持部110之被處理晶圓W:和被保持 於第2保持部1 1 1之支撐晶圓S被剝離（第1 1圖之工程 A1)。 此時：第2保持部1 1 1係在垂直方向移動1 ΟΟμηι :並 且在水平方向移動300mm。在此：在本實施形態中：重合 晶圓T中之接著劑G之厚度爲例如30μπι〜40μηι :形成在 被處理晶圓W之接合面W;之電子電路（凸塊）之高度爲例 如2 0 μιη。因此：被處理晶圓W上之電子電路和支撐晶圓 S之間的距離成爲微小。在此：於使例如第2保持部111 僅在水平方向移動之時：電子電路和支撐晶圓S接觸：有 電子電路受損之虞。此點。如本實施形態般：藉由使第2 保持部111在水平方向移動：並且也在垂直方向移動：可 以迴避電子電路和支撐晶圓S之接觸：並可以抑制電子電 路之損傷。並且：該第2保持部111之垂直方向之移動距 離和水平方向之移動距離之比率：係根據被處理晶圓W 上之電子電路（凸塊）之高度而設定。 •23- 201234444 之後：在剝離裝置3 0被剝離之被處理晶圓W :藉由 第2搬運裝置32被搬運至第1洗淨裝置31»在此：針對 ΪΙ由第2搬運裝置32的被處理晶圓W之搬運方法予以說 明。 首先：使支撐板230在剝離裝置30內移動：如第15 圖所示般：將支撐板230配置在被保持在第1保持部Π0 之被處理晶圓W之下方。之後：使支撐板23 0上升：停 止自第1保持部110中之吸引管123吸引被處理晶圓W。 然後：被處理晶圓W從第1保持部110被收授至支撐板 230。之後：如第16圖所示般：使支撐板23 0下降：並使 該支撐板2 3 0移動至剝離裝置3 0之外部。 之後：如第17圖所示般：使白努力吸盤23 1在支撐 板230之上方移動。接著：如第18圖所示般：使白努力 231下降：以支撐板230和白努力吸盤231夾著被處理晶 圓W而予以支撐。此時：藉由白努力吸盤231吸附保持 被處理晶圓W。 接著：如第19圖所示般：使支撐臂243、250轉動： 使以支撐板230和白努力吸盤231所支撐之被處理晶圓W 之表背面予以反轉。即是：將支撐板230配置在白努力吸 盤23 1之上方》 之後：使以支撐板230和白努力吸盤231所支撐之被 處理晶圓W在第1洗淨裝置31內移動：如第20圖所示 般：將被處理晶圓W配置在多孔性吸盤190之上方。此 時：使多孔性吸盤1 90上升至較杯體1 94上方而使待機。 -24- 201234444 之後：使被處理晶圓w下降：如第21圖所示般：從支撐 板2 3 0和白努力吸盤2 3 1收授被處理晶圓W至多孔性吸 盤190並予以吸附保持。之後：又使白努力吸盤231下降 :使移動至第1洗淨裝置31之外部。 之後：如第22圖所示般：使支撐板23 0些微程度上 升：從該支撐板230之供給口 240供給洗淨液至被處理晶 圓 w之接合面w广如此一來：被處理晶圓w之接合面 Wj被暫時洗淨：並且支撐板2 3 0本體也被洗淨。 當洗淨被處理晶圓W之接合面W;時：使多孔性吸盤 190下降至特定位置。接著：藉由機械臂201:使待機部 205之洗淨液噴嘴203移動至被處理晶圓W之中心部之上 方。之後：一面藉由多孔性吸盤1 90使被處理晶圓W予 以旋轉：一面從洗淨液噴嘴203供給洗淨液至被處理晶圓 W之接合面W』。被供給之洗淨液係藉由離心力而被擴散 至被處理晶圓W之接合面W:之全面：洗淨該處理晶圓W 之接合面W〆第1 1圖之工程A2)。 在此：對如上述般被搬入至搬入搬出台2之複數之重 合晶圓T事先進行檢查：被判別成含正常之被處理晶圓W 之重合晶圓T和包含具有缺陷之被處理晶圓W之重合晶 圓T。 從正常之重合晶圓T剝離之正常的被處理晶圓W在 工程A2接合面Wj被洗淨之後：藉由第3搬運裝置41被 搬運至後處理台4。並且：藉由該第3搬運裝置41之被處 理晶圓W之搬運：因與藉由上述第2搬運裝置32之被處 -25- 201234444 理晶圓W之搬運幾乎相同：故省略說明。之後：在後處 理台4中：對被處理晶圓W進行特定之後處理（第11圖之 工程A3)。如此一來：被處理晶圓W被製品化。 另外：從具有缺陷之重合晶圓T被剝離之具有缺陷的 被處理晶圓W在工程A2接合面被洗淨之後：藉由第1 搬運裝置20被搬運至搬入搬出台2。之後：具有缺陷之被 處理晶圓W係從搬入搬出台2被搬出至外部且被回收（第 1 1圖之工程A 4)。 於對被處理晶圓W進行上述工程A2〜A4之期間：在 剝離裝置30被剝離之支撐晶圓S係藉由第1搬運裝置20 被搬運至第2洗淨裝置33。然後：在第2洗淨裝置33中 :洗淨支撐晶圓S之接合面S』（第1 1圖之工程A5)。並且 :第2洗淨裝置33中之支撐晶圓S之洗淨因與上述第1 洗淨裝置31中之被處理晶圓W之洗淨相同：故省略說明 〇 之後：接合面Sj被洗淨之支撐晶圓S :係藉由第1搬 運裝置20而被搬運至搬入搬出台2。之後：支撐晶圓S 係從搬入搬出台2被搬出至外部且被回收（第11圖之工程 A6)。如此一來：結束一連串之被處理晶圓W和支撐晶圓 S之剝離處理。 若藉由以上之實施形態時：在剝離裝置3 0中將重合 晶圓T剝離成被處理晶圓W和支撐晶圓S之後：可以在 第1洗淨裝置31中：洗淨被剝離之被處理晶圓W :並且 在第2洗淨裝置3 2中：洗淨被剝離之支撐晶圓S。如此 -26- 201234444 一來：若藉由本實施形態時：可以在一個剝離系統1內 效率佳地進行從被處理晶圓W和支撐晶圓S之剝離至 處理晶圓w之洗淨和支撐晶匱S之洗淨爲止的一連串 離處理。再者：在第1洗淨裝置31和第2洗淨裝置33 :各可以並行進行被處理晶圓W之洗淨和支撐晶圓S 洗淨。並且：在剝離裝置3 0中：於剝離被處理晶圓W 支撐晶圓S之期間：亦可以在第1洗淨裝置31和第2 淨裝置3 3之中處理另外之被處理晶圓W和支撐晶圓S 因此：可以效率佳地進行被處理晶圓W和支撐晶圓S 剝離：並可以提升剝離處理之處理量。 再者：在如此一連串之製程中：因可以從被處理晶 W和支撐晶圓S之剝離進行至被處理晶圓W之後處理 故可以更提升晶圓處理之處理量。 再者：於將剝離裝置30被剝離之被處理晶圓W搬 至第1洗淨裝置31之時：使用上述第2搬運裝置32。 是：藉由支撐板230將被處理晶圓W從剝離裝置30搬 之後：以支撐板23 0和白努力吸盤231夾著被處理晶圓 而予以支撐：使該被處理晶圓W之表背面予以反轉： 被處理晶圓W搬運至第1洗淨裝置31。然後：可以在 1洗淨裝置31中：從支撐板23 0之供給口 240供給洗淨 :洗淨被處理晶圓W之接合面W;和支撐板23 0本身。 此一來：因可以以第2搬運裝置32洗淨被處理晶圓W 故可以縮短之後之第1洗淨裝置31中之被處理晶圓W 洗淨時間：並且又可以以提升剝離處理之處理量。而且 被 剝 中 之 和 洗 〇 之 圓 運 即 出 W 將 第 液 如 之 -27- 201234444 因也可以洗淨支撐板230:故可以適當搬運下一個被處理 晶圓W » 再者：第2搬運裝置32因具有保持被處理晶圓W之 白努力吸盤231:故可以適當吸附保持被處理晶圓W。並 且：因白努力吸盤23 1具有大於多孔性吸盤190之直徑： 故可以於將被處理晶圓W從白努力吸盤231收授至多孔 性吸盤190之時：可以迴避白努力吸盤231與多孔性吸盤 1 90干擾。 在以上之實施形態中：雖然在剝離裝置3 0中：使第2 保持部111在垂直方向及水平方向移動：但是即使使第1 保持部110在垂直方向及水平方向移動亦可。或是：即使 使第1保持部110和第2保持部111之雙方在垂直方向及 水平方向移動亦可。 在以上之剝離裝置30中：雖然使第2保持部111在 垂直方向及水平方向移動：但是即使使第2保持部111僅 在水平方向移動：使該第2保持部111之移動速度變化亦 可。具體而言：即使將第2保持部111開始移動之時的移 動速度設爲低速：之後漸漸使移動速度加速亦可。即是： 於開始使第2保持部111移動之時：被處理晶圓W和支 撐晶圓S之接著面積大：被處理晶圓W上之電子電路因 容易受到接著劑G之影響：故將第2保持部111之移動速 度設爲低速。之後：隨著被處理晶圓W和支撐晶圓S之 接著面積變小：因被處理晶圓W上之電子電路難以受到 接著劑G之影響：故漸漸地加速地2保持部111之移動速-20- 201234444 The struts 230 and the white working suction cups 231 are to receive the processed wafers W at the porous chuck 1 90: the white working suction cups 23 1 and the porous suction cups 1 90 are not disturbed. The white effort cup 231 is supported by the support arm 250 as shown in Fig. 7. The support arm 25 0 is supported by the first drive unit 251 . By the first driving portion 251, the support arm 250 is freely rotatable about the horizontal axis: and can be expanded and contracted in the horizontal direction. Below the first drive unit 251: a second drive unit 252 is provided. The second driving portion 252: the first driving portion 25 1 is rotatable about the vertical axis: and can be moved up and down in the sag direction. The second drive unit 252 is attached to the rail 25 3 . As shown in Fig. 1, the rails 25 3 are provided on the negative side in the X direction of the peeling device 30 and the first cleaning device 31 (the lower side in the first drawing): in the peeling device 30 and the 1 The cleaning device 3 1 extends in the Y direction (the left and right direction in Fig. 1). Then, the second driving unit 25 2 is movable on the rail 253: the white working suction cup 23 1 is movable between the conveying device 30 and the first cleaning device 31. Further, the support arm 250, the first drive unit 251, the second drive unit 252, and the track 253 constitute a second moving mechanism in the present invention. Further, in the second transport device 32 described above, the support arms 243 and 250 and the first drive units 244 and 251 constitute the reversing mechanism in the present invention. Further, since the third transporting device 41 has the same configuration as the white working chuck 231, the support arm 250, the first driving unit 251, and the second driving unit 252 in the second transporting device 32, the description thereof will be omitted. However, the second drive unit 52 of the third transport unit 41 is attached to the transport path 40 shown in Fig. 1 : the third transport unit 41 is movable on the transport path 40. -21 - 201234444 In the above peeling system 1, as shown in Fig. 1, a control unit 300 is provided. The control unit 300 is, for example, a computer: has a program storage unit (not shown). The program storage unit stores a program for controlling the processed wafer W, the supporting wafer S, and the superposed wafer T in the peeling system 1. Further, the program storage unit stores a program for controlling the peeling process described later in the peeling system 1 by controlling the operation of the drive system such as the above-described various processing devices or transport devices. And: the above program is a computer readable memory medium recorded on, for example, a computer readable hard disk (HD), a floppy disk (FD), a compact disk (CD), a magneto-optical disk (MO), a memory card, etc. 即使 even It is also possible to be installed from the memory medium 至 to the control unit 00. Next, a method of peeling off the processed wafer W and the supporting wafer S by using the peeling system 1 configured as described above will be described. Fig. 1 is a flow chart showing an example of the main work of the peeling process. First, the cassette CT, the empty cassette Cw, and the empty cassette Cs in which a plurality of wafer wafers are accommodated are placed on the specific cassette mounting plate 11 of the loading/unloading station 2. The superposed wafer T in the cassette CT is taken out by the first conveying device 20: the peeling device 30 is conveyed to the peeling processing table 3. At this time, the superposed wafer T is transported while the wafer W to be processed is placed on the upper side and the support wafer S is placed on the lower side. The superposed wafer T carried into the peeling device 30 is adsorbed and held by the second holding portion 111. Thereafter, the second holding portion 1 1 1 is raised by the moving mechanism 150: as shown in FIG. 2, the first holding portion 1 10 and the second holding portion 111 are held together to hold the wafer T . At this time, the non-joining surface WN of the wafer W to be processed is adsorbed and held by the first holding portion 1 1 : after the non-joining surface sN » of the supporting wafer s is adsorbed and held by the holding portion 1 1 1 of the second -22-2012344: The superposed wafer T is heated to a specific temperature, for example, 200 ° C by the heating mechanisms 124, 141. As a result, the adhesive G in the wafer T is softened. Next, the softening state of the adhesive G is maintained by the heating means 124, 141: heating the superposed wafer T: the second holding portion 111 and the supporting wafer S are moved by the moving mechanism 150 as shown in FIG. In the vertical direction and horizontal direction: that is, moving obliquely downward. Then, as shown in Fig. 14, the wafer W to be processed held in the first holding portion 110 and the supporting wafer S held in the second holding portion 1 1 1 are peeled off (the construction of Fig. 1) A1). At this time, the second holding portion 1 1 1 is moved by 1 ΟΟμηι in the vertical direction and moved by 300 mm in the horizontal direction. Here, in the present embodiment, the thickness of the adhesive G in the superposed wafer T is, for example, 30 μm to 40 μm: the bonding surface W formed on the wafer W to be processed; the height of the electronic circuit (bump) is, for example, 2 0 μιη. Therefore, the distance between the electronic circuit on the processed wafer W and the supporting wafer S becomes minute. Here, when, for example, the second holding portion 111 is moved only in the horizontal direction: the electronic circuit is in contact with the supporting wafer S: the electronic circuit is damaged. This point. As in the present embodiment, by moving the second holding portion 111 in the horizontal direction: and also moving in the vertical direction: the contact between the electronic circuit and the supporting wafer S can be avoided: the damage of the electronic circuit can be suppressed. Further, the ratio of the moving distance in the vertical direction of the second holding portion 111 to the moving distance in the horizontal direction is set in accordance with the height of the electronic circuit (bump) on the wafer W to be processed. 23-201234444 After: the processed wafer W to be peeled off by the peeling device 30 is transported to the first cleaning device 31 by the second transport device 32. Here, the target of the second transport device 32 is A method of handling the wafer W will be described. First, the support plate 230 is moved in the peeling device 30: as shown in Fig. 15, the support plate 230 is disposed below the processed wafer W held by the first holding portion Π0. Thereafter, the support plate 23 0 is raised: the suction of the wafer W to be processed from the suction pipe 123 in the first holding portion 110 is stopped. Then, the processed wafer W is taken up from the first holding portion 110 to the support plate 230. Thereafter: as shown in Fig. 16, the support plate 23 0 is lowered: the support plate 203 is moved to the outside of the peeling device 30. Thereafter: as shown in Fig. 17, the white working suction cup 23 1 is moved over the support plate 230. Next, as shown in Fig. 18, the white effort 231 is lowered: the support plate 230 and the white working suction cup 231 are supported by sandwiching the processed crystal W. At this time, the wafer W to be processed is adsorbed and held by the white suction cup 231. Next, as shown in Fig. 19, the support arms 243, 250 are rotated: the front and back surfaces of the wafer W to be processed supported by the support plate 230 and the white working chuck 231 are reversed. That is, after the support plate 230 is placed above the white-powered suction cup 23 1 , the processed wafer W supported by the support plate 230 and the white-powered suction cup 231 is moved in the first cleaning device 31: as in the 20th As shown in the figure, the processed wafer W is placed above the porous chuck 190. At this time, the porous chuck 1 90 is raised above the cup 1 94 to stand by. -24- 201234444 After: lowering the processed wafer w: as shown in Fig. 21: the processed wafer W is transferred from the support plate 203 and the white working chuck 2 3 1 to the porous chuck 190 and adsorbed maintain. Thereafter: the white effort suction cup 231 is lowered again: to move to the outside of the first cleaning device 31. Thereafter, as shown in Fig. 22, the support plate 23 is slightly raised: the supply surface from the supply port 240 of the support plate 230 is supplied to the bonding surface w of the processed wafer w. The joint surface Wj of the circle w is temporarily washed: and the support plate 203 body is also washed. When the bonding surface W of the wafer W to be processed is cleaned; the porous chuck 190 is lowered to a specific position. Next, the robot arm 201 moves the cleaning liquid nozzle 203 of the standby unit 205 above the center portion of the wafer W to be processed. Thereafter, the wafer W to be processed is rotated by the porous chuck 1 90 while supplying the cleaning liquid from the cleaning liquid nozzle 203 to the bonding surface W of the wafer W to be processed. The supplied cleaning liquid is diffused by the centrifugal force to the bonding surface W of the processed wafer W: the entire surface of the wafer W to be cleaned: the bonding surface W of the processed wafer W is cleaned (Project A2) of Fig. 1). Here, the plurality of coincident wafers T that have been carried into the loading/unloading station 2 as described above are inspected in advance: the coincident wafer T that is determined to contain the normal processed wafer W and the processed wafer containing the defective wafer W coincides with wafer T. The normal processed wafer W peeled off from the normal overlap wafer T is transported to the post-processing station 4 by the third transport device 41 after the project A2 joint surface Wj is cleaned. Further, the conveyance of the wafer W to be processed by the third conveyance device 41 is almost the same as the conveyance of the wafer W by the second conveyance device 32. Therefore, the description thereof is omitted. Thereafter: in the post-processing station 4: the processed wafer W is subjected to a specific post-processing (Project A3 in Fig. 11). In this way, the processed wafer W is processed. Further, after the defective processed wafer W which has been peeled off from the defective wafer T is cleaned on the surface of the project A2, it is transported to the loading/unloading station 2 by the first conveying device 20. After that, the processed wafer W having the defect is carried out from the loading/unloading station 2 to the outside and is collected (Project A 4 in Fig. 1). While the above-described processes A2 to A4 are being performed on the wafer W to be processed, the support wafer S that has been peeled off by the peeling device 30 is transported to the second cleaning device 33 by the first transport device 20. Then, in the second cleaning device 33, the bonding surface S of the supporting wafer S is cleaned (the project A5 in Fig. 1). Further, since the cleaning of the support wafer S in the second cleaning device 33 is the same as the cleaning of the wafer W to be processed in the first cleaning device 31, the description is omitted: the bonding surface Sj is cleaned. The support wafer S is transported to the loading/unloading stage 2 by the first conveying device 20. Thereafter, the support wafer S is carried out from the loading/unloading stage 2 to the outside and is collected (Project A6 in Fig. 11). In this way, the stripping process of a series of processed wafers W and supporting wafers S is ended. According to the above embodiment, after the superposed wafer T is peeled off into the processed wafer W and the supporting wafer S in the peeling device 30: in the first cleaning device 31: the peeled off can be washed The wafer W is processed: and in the second cleaning device 3 2: the peeled supporting wafer S is washed. Thus -26-201234444: When using this embodiment, it is possible to efficiently perform the cleaning from the processed wafer W and the supporting wafer S to the processing wafer w in a stripping system 1 A series of separation treatments until 洗S is washed. Further, in the first cleaning device 31 and the second cleaning device 33, the cleaning of the processed wafer W and the cleaning of the supporting wafer S can be performed in parallel. Further, in the peeling device 30, during the process of peeling off the wafer W to be supported by the wafer S, another processed wafer W may be processed in the first cleaning device 31 and the second cleaning device 3 Supporting the wafer S Therefore, the peeling of the processed wafer W and the supporting wafer S can be performed efficiently: and the processing amount of the peeling treatment can be improved. Furthermore, in such a series of processes, the throughput of the wafer processing can be further improved because the process can be processed from the peeling of the processed wafer W and the supporting wafer S to the processed wafer W. Further, when the wafer W to be processed from which the peeling device 30 is peeled off is transported to the first cleaning device 31, the second transport device 32 is used. After the processed wafer W is removed from the stripping device 30 by the support plate 230: the support wafer 30 0 and the white working chuck 231 are supported by sandwiching the processed wafer: the front surface of the processed wafer W is Reversed: The processed wafer W is transported to the first cleaning device 31. Then, in the cleaning device 31, the cleaning can be supplied from the supply port 240 of the support plate 23 0: the bonding surface W of the processed wafer W is cleaned; and the support plate 23 itself. In this case, since the wafer W to be processed can be cleaned by the second transport device 32, the cleaning time of the wafer W to be processed in the first cleaning device 31 can be shortened: and the processing of the lift-off processing can be performed. the amount. Moreover, it can be washed out by the peeling and washing. The liquid can be washed as the -27-201234444. Therefore, the support plate 230 can be washed: Therefore, the next processed wafer W can be properly transported. Since the device 32 has the white working chuck 231 for holding the wafer W to be processed, the wafer W to be processed can be appropriately adsorbed and held. Further, since the white suction cup 23 1 has a larger diameter than the porous suction cup 190: when the processed wafer W is received from the white working suction cup 231 to the porous suction cup 190: the white suction cup 231 and the porosity can be avoided. Suction cup 1 90 interference. In the above embodiment, in the peeling device 30, the second holding portion 111 is moved in the vertical direction and the horizontal direction: the first holding portion 110 may be moved in the vertical direction and the horizontal direction. Alternatively, both the first holding portion 110 and the second holding portion 111 may be moved in the vertical direction and the horizontal direction. In the above-described peeling device 30, the second holding portion 111 is moved in the vertical direction and the horizontal direction. However, even if the second holding portion 111 is moved only in the horizontal direction, the moving speed of the second holding portion 111 can be changed. . Specifically, the moving speed at the time of starting the movement of the second holding portion 111 is set to a low speed: the moving speed may be gradually increased. That is, when the second holding portion 111 is started to move: the bonding area between the processed wafer W and the supporting wafer S is large: the electronic circuit on the processed wafer W is easily affected by the adhesive G: The moving speed of the second holding unit 111 is set to be low. Thereafter, the area after the wafer W to be processed and the supporting wafer S become smaller: since the electronic circuit on the wafer W to be processed is hardly affected by the subsequent agent G, the moving speed of the holding portion 111 is gradually accelerated.

-28- 201234444 度。如此一來：可以迴避電子電路和支撐晶圓S之接觸： 並可抑制電子電路之損傷。 再者：在以上之實施形態中：雖然在剝離裝置30使 第2保持部111在垂直方向及水平方向移動：但是例如被 處理晶圓W上之電子電路和支撐晶圓S之間的距離充分 大時：僅使第2保持部111在水平方向移動亦可。如此一 來：可以迴避電子電路和支撐晶圓S之接觸：並且可以容 易控制第2保持部111之移動。並且：即使使第2保持部 1 1 1僅在垂直方向移動而剝離被處理晶圓W和支撐晶圓S 亦可：即使使第2保持部111之外周部端部僅在垂直方向 移動而剝離被處理晶圓W和支撐晶圓S亦可。 並且：在以上之實施形態中：雖然在將被處理晶圓W 配置在上側：並且將支撐晶圓S配置在下側之狀態下：剝 離該些被處理晶圓W和支撐晶圓S :但是即使將被處理晶 圓W和支撐晶圓S之上下配置設成相反亦可。 在以上之實施形態中：第3搬運裝置41雖然具有白 努力吸盤23 1 :但是即使具有多孔性吸盤（無圖式）：以取 代該白努力吸盤23 1亦可。即使此時：亦可以藉由多孔性 吸盤：適當吸附保持薄型化之被處理晶圓W。 在以上之實施形態中：雖然第1洗淨裝置3 1和第2 洗淨裝置33之洗淨液噴嘴203 :使用二流體噴嘴：但是洗 淨液噴嘴203之形態並不限定於本實施形態：亦可以使用 各種噴嘴。例如：就以洗淨液203而言：即使使用使供給 洗淨液體之噴嘴和供給惰性氣體之噴嘴一體化之噴嘴體： -29- 201234444 或噴霧噴嘴、噴射噴嘴、超音波噴嘴等。再者：因提升洗 淨處理之處理量：故即使供給被加熱至例如80°C之洗淨液 亦可。 再者：在第1洗淨裝置31和第2洗淨裝置33中：除 了洗淨液噴嘴203之外：即使設置供給IPA(異丙醇）之噴 嘴亦可。此時：藉由來自洗淨液噴嘴2 03之洗淨液：洗淨 被處理晶圓W或支撐晶圓S之後：將被處理晶圓W或支 撐晶圓S上之洗淨液置換成IPA。如此一來：被處理晶圓 W或支撐晶圓S之接合面W厂S:更確實地被洗淨。 在以上之實施形態之剝離系統1中：即使設置將在剝 離裝置3 0被加熱之被處理晶圓W冷卻至特定溫度之溫度 調節裝置（無圖示）亦可。此時：因被處理晶圓W之溫度被 調節至適當之溫度：故可以更圓滑地進行後續之處理。 接著：針對第2搬運裝置32之其他實施形態予以說 明。針對與先前所述相同之部分：省略說明。將本實施形 態中之第2搬運裝置32表示於第23圖。第23圖爲在剝 離系統1中：抽出剝離裝置30、第1洗淨裝置31及第2 搬運裝置32之部分的俯視圖。 第2搬運裝置32具有保持被處理晶圓W之保持部 3 5 0。保持部3 5 0係經支撐構件3 5 1被支撐於構成多關節 狀之複數例如兩個的機械臂部3 52。並且：機械臂部352 係被支撐於驅動部353。藉由該驅動部353:兩個機械臂 352被構成在水平方向伸縮自如：並且在繞垂直軸旋轉自 如。再者：藉由驅動部353:機械臂部352可以在垂直方 -30- 201234444 向升降。藉由如此之構成：保持部350可在水平面內移動 :再者也成爲能夠升降。 第24圖表示保持部350之俯視圖。保持部350具有 由白努力吸盤所構成之保持板3 60。然後：保持板360可 以在使被處理晶圓W從被處理晶圓W之下方浮起之狀態 下予以保持。再者：在保持板360之外周：設置有複數例 如四個用以引導被處理晶圓W之周緣的導件361。藉由導 件361:可以防止被處理晶圓W之位置對保持板360偏移 的情形。再者：保持板3 60可繞水平之中心軸（繞支撐構 件351之中心軸）轉動：成爲可以使該保持板3 60之上下 面反轉之構成。即是：保持板3 60係可以從被處理晶圓W 之下方反轉從在保持板3 60之上面保持被處理晶圓W之 狀態姿勢：變換成在保持板360之下面保持被處理晶圓W 之狀態。並且：在本實施形態中：支撐構件3 5 1、機械臂 部3 5 2及驅動部3 5 3構成使被處理晶圓W之表背面反轉 之反轉機構。 接著：針對本實施形態中之第2搬運裝置3 2之動作 予以說明。首先：使保持板3 60移動至剝離裝置30內： 被處理晶圓W從第1保持部110被收授至保持板3 60。被 處理晶圓W係在從保持板3 60浮起之狀態：並且藉由導 件361保持成不會偏移水平方向。之後：使保持板3 60移 動至剝離裝置30之外部。 之後：使保持板3 60之上下面反轉：姿勢變換成在保 持板360之下面保持被處理晶圓W之狀態。 201234444 之後：使保持板3 60移動至第1洗淨裝置31內：將 被處理晶圓.W收授至多孔性吸盤1 90。若藉由本實施形態 之構成時：能夠使第2搬運裝置32更爲單純化：提升裝 置之信賴性。再者：保持板360因係白努力吸盤：故可以 在使被處理晶圓W浮起之狀態下保持。因此：即使被處 理晶圓W中之保持板3 60側之面有髒污之情形時：其髒 污也不會移到保持板3 6 0。再者：因可以在使被處理晶圓 W浮起之狀態下保持：故即使在被處理晶圓形成製品（電 子電路等之裝置）。也不會有其製品破損之情形。 在以上之實施形態中：即使將導件3 6 1設爲對保持板 3 60接離自如之構成亦可。此時：保持板360接取被處理 晶圓W之時：在導件361對保持板3 60離開之狀態下接 取被處理晶圓W:之後使導件361靠近保持板3 60。或是 :此時即使藉由導件361:保持被處理晶圓W之周緣亦可 。然後：於被處理晶圓W成爲不會在水平方向偏移之狀 態後：開始移動保持板360。並且：保持板360在其他部 分收授被處理晶圓W之時：若以與該動作相反之順序使 導件361動作即可。藉由設成如此之構成：更提升裝置之 信賴性。再者：在保持被處理晶圓W之狀態下：能夠以 更快之速度使保持板360移動。 再者：從白努力吸盤之保持板360:使溫度調整至特 定溫度之氣體噴出：即使積極性調整被保持於保持板360 被處理晶圓W之溫度亦可。 再者：即使使含有離子之氣體自保持板360噴出：防 -32- 201234444 止被保持於保持板360之被處理晶圓W之帶電亦可。 再者：即使使惰性氣體自保持板360噴出亦可：如此 一來：可以防止例如被形成在被處理晶圓W之裝置的銅 氧化。 並且：即使部分性地組合實施上述之實施形態當然亦 可。 再者：在以上之實施形態中：雖然針對在後處理台4 中：對被處理晶圓W進行後處理且予以製品化之情形予 以說明：但是本發明亦可以適用於例如從支撐晶圓剝離例 如在三次元積體技術中所使用之被處理晶圓之時。並且： 三次元積體技術係因應著近年來半導體裝置之高積體化之 要求的技術：將該複數之半導體裝置予以三次元疊層：以 取代在水平面內配置高積體化之複數之半導體裝置的技術 。即使在該三次元積體技術中：也被要求疊層之被處理晶 圓之薄型化：將該被處理晶圓接合於支撐晶圓而進行特定 處理》 以上：雖然一面參照附件圖面一面針對本發明之較佳 實施形態予以說明：但是本發明並不限定於如此之例。熟 悉此項技術之人士當然可在申請專利範圍所記載之思想之 範疇內進行各種變更例或修正例：而該等變更與修正當然 也屬於本發明之技術範圍。本發明並不限定於該例：可採 用各種態樣。本發明亦可以適用於基板以外之FPD(平面 顯示器）、光罩用之光柵等之其他基板之時。 -33- 201234444 【圖式簡單說明】 第1圖爲表示與本實施形態有關之剝離系統之構成槪 略的俯視圖。 第2圖爲被處理晶圓和支撐晶圓之側面圖。 第3圖爲表示剝離裝置之構成的槪略之縱斷剖面圖。 第4圖爲表示第1洗淨裝置之構成的槪略之縱斷剖面 圖。 第5圖爲表示第1洗淨裝置之構成的槪略之橫剖面圖 〇 第6圖爲表示第2洗淨裝置之構成的槪略之縱剖面圖 〇 第7圖爲表示第2搬運裝置之構成之槪略的側面圖。 第8圖爲表示支擦.板之構成之槪略的俯視圖。 第9圖爲表示支撐板之構成的槪略之縱剖面圖。 第10圖爲表示白努力吸盤之構成的槪略之俯視圖。 第11圖爲表示剝離處理之主要工程的流程圖。 第12圖爲表示以第1保持部和第2保持部保持重合 晶圓之樣子的說明圖。 第13圖爲表示使第2保持部在垂直方向及水平方向 移動之樣子的說明圖。 第1 4圖爲表示剝離被處理晶圓和支撐晶圓之樣子的 說明圖。 第15圖爲表示將支撐板配置在第1保持部之下方的 說明圖。 -34- 201234444 第16圖爲表示被處理晶圓從第1保持部被收授於支 撐板之樣子的說明圖。 第17圖爲表示將白努力吸盤配置在支撐板之上方的 說明圖。 第18圖爲表示以支撐板和白努力吸盤支撐被處理晶 圓之樣子的說明圖。 第19圖爲表示使被支撐板和白努力吸盤支撐之被處 理晶圓之表背面反轉之樣子的說明圖。 第20圖爲表示將被支撐板和白努力吸盤支撐之被處 理晶圓配置在多孔性吸盤之上方的說明圖。 第21圖爲表示從支撐板和白努力吸盤收授被處理晶 圓至多孔性吸盤之樣子的說明圖。 第22圖爲表示洗淨被處理晶圓和支撐板之樣子的說 明圖。 第23圖爲表示與其他實施形態有關之第2搬運裝置 之構成之槪略的俯視圖。 第24圖爲表示與其他實施形態有關之第2搬運裝置 之構成之槪略的俯視圖。 【主要元件符號說明】 1 :剝離系統 2 :搬入搬出台 3 :剝離處理台 4 :後處理台 -35- 201234444 5 :介面台 6 :晶圓搬運區域 20 :第1搬運裝置 3 0 :剝離裝置 3 1 :第1洗淨裝置 32 :第2搬運裝置 3 3 :第2洗淨裝置 41 :第3搬運裝置 23 0 :支撐板 23 1 :白努力吸盤 240 :供給口 243 :支撐臂 2 4 4 :第1驅動部 2 4 5 :第2驅動部 246 :軌道 250 :支撐臂 2 5 1 :第1驅動部 2 5 2 :第2驅動部 25 3 :軌道 3 0 0 :控制部 G :接著劑 S :支撐晶圓 S j ·接合面 S N ·非接合面 -36 201234444 τ :重合晶圓 W :被處理晶圓 W j ·接合面 W Ν ·非接合面-28- 201234444 degrees. In this way, the contact between the electronic circuit and the supporting wafer S can be avoided: the damage of the electronic circuit can be suppressed. Further, in the above embodiment, the second holding portion 111 is moved in the vertical direction and the horizontal direction in the peeling device 30: for example, the distance between the electronic circuit on the processed wafer W and the supporting wafer S is sufficient. Large time: only the second holding portion 111 may be moved in the horizontal direction. In this way, the contact between the electronic circuit and the supporting wafer S can be avoided: and the movement of the second holding portion 111 can be easily controlled. Further, even if the second holding portion 1 1 1 is moved only in the vertical direction and the wafer W to be processed and the supporting wafer S are peeled off, the peripheral end portion of the second holding portion 111 can be peeled off only in the vertical direction. The processed wafer W and the supporting wafer S may also be used. Further, in the above embodiment, in the state where the wafer W to be processed is disposed on the upper side and the supporting wafer S is disposed on the lower side: the processed wafer W and the supporting wafer S are peeled off: The arrangement of the wafer W to be processed and the support wafer S may be reversed. In the above embodiment, the third conveying device 41 has a white suction cup 23 1 : but it may have a porous suction cup (not shown) to replace the white working suction cup 23 1 . Even at this time, it is also possible to maintain the thinned processed wafer W by appropriate adsorption by a porous chuck. In the above embodiment, the first cleaning device 31 and the cleaning liquid nozzle 203 of the second cleaning device 33 use a two-fluid nozzle: the form of the cleaning liquid nozzle 203 is not limited to the embodiment: Various nozzles can also be used. For example, in the case of the cleaning liquid 203, a nozzle body that integrates a nozzle for supplying a cleaning liquid and a nozzle for supplying an inert gas is used: -29-201234444 or a spray nozzle, a spray nozzle, an ultrasonic nozzle, or the like. Further, since the amount of treatment for the washing treatment is increased, it is possible to supply the washing liquid heated to, for example, 80 °C. Further, in the first cleaning device 31 and the second cleaning device 33, in addition to the cleaning liquid nozzle 203, a nozzle for supplying IPA (isopropyl alcohol) may be provided. At this time, after the cleaning liquid from the cleaning liquid nozzle 203: washing the processed wafer W or supporting the wafer S: replacing the cleaning liquid on the processed wafer W or the supporting wafer S with IPA . In this way, the joint surface W of the processed wafer W or the supporting wafer S is more reliably washed. In the peeling system 1 of the above embodiment, a temperature adjusting device (not shown) for cooling the processed wafer W heated by the peeling device 30 to a specific temperature may be provided. At this time, since the temperature of the wafer W to be processed is adjusted to an appropriate temperature, subsequent processing can be performed more smoothly. Next, another embodiment of the second conveying device 32 will be described. For the same parts as previously described: the description is omitted. The second conveying device 32 in the present embodiment is shown in Fig. 23. Fig. 23 is a plan view showing a portion of the peeling system 1 in which the peeling device 30, the first washing device 31, and the second conveying device 32 are taken out. The second conveying device 32 has a holding portion 350 that holds the wafer W to be processed. The holding portion 350 is supported by a plurality of mechanical arm portions 3 52 that constitute a multi-joint shape, for example, two. Further, the mechanical arm portion 352 is supported by the driving portion 353. The drive unit 353: the two robot arms 352 are configured to be expandable and contractible in the horizontal direction: and are rotatable about the vertical axis. Furthermore, by the driving portion 353: the mechanical arm portion 352 can be moved up and down in the vertical direction -30-201234444. With such a configuration, the holding portion 350 can be moved in the horizontal plane: it is also possible to move up and down. Fig. 24 is a plan view showing the holding portion 350. The holding portion 350 has a holding plate 3 60 composed of a white hard suction cup. Then, the holding plate 360 can be held in a state where the wafer W to be processed is floated from below the wafer W to be processed. Further, on the outer circumference of the holding plate 360: a plurality of guides 361 for guiding the periphery of the wafer W to be processed are provided, for example. By the guide 361: it is possible to prevent the position of the wafer W to be processed from being shifted to the holding plate 360. Further, the holding plate 3 60 is rotatable about a horizontal central axis (around the central axis of the supporting member 351): a configuration in which the lower surface of the holding plate 366 can be reversed. That is, the holding plate 3 60 can be inverted from the lower side of the processed wafer W from the state in which the processed wafer W is held on the holding plate 3 60: converted to hold the processed wafer under the holding plate 360 The state of W. Further, in the present embodiment, the support member 351, the mechanical arm portion 325, and the drive portion 353 constitute an inversion mechanism that reverses the front and back surfaces of the wafer W to be processed. Next, the operation of the second conveying device 3 2 in the present embodiment will be described. First, the holding plate 3 60 is moved into the peeling device 30: The processed wafer W is taken up from the first holding portion 110 to the holding plate 3 60. The wafer W to be processed is in a state of being floated from the holding plate 3 60: and is held by the guide 361 so as not to be displaced in the horizontal direction. Thereafter: the holding plate 3 60 is moved to the outside of the peeling device 30. Thereafter: the upper and lower sides of the holding plate 3 60 are reversed: the posture is changed to a state in which the wafer W to be processed is held under the holding plate 360. After 201234444: The holding plate 3 60 is moved into the first cleaning device 31: the processed wafer.W is transferred to the porous chuck 1 90. According to the configuration of the present embodiment, the second transporting device 32 can be made more simplistic: the reliability of the lifting device can be improved. Further, the holding plate 360 is required to suck the disk by whitening: it can be held in a state where the wafer W to be processed is floated. Therefore, even if the surface on the side of the holding plate 3 60 in the wafer W is contaminated, its dirt does not move to the holding plate 360. Further, since it can be held in a state where the wafer W to be processed is floated, a product (an apparatus such as an electronic circuit) is formed even on the wafer to be processed. There will be no damage to its products. In the above embodiment, the guide member 361 may be configured to be detachable from the holding plate 3 60. At this time, when the holding plate 360 picks up the wafer W to be processed: the processed wafer W is picked up while the guiding member 361 is away from the holding plate 3 60: the guiding member 361 is brought close to the holding plate 3 60. Or: At this time, even by the guide 361: the periphery of the wafer W to be processed may be maintained. Then, after the processed wafer W is not displaced in the horizontal direction: the movement holding plate 360 is started. Further, when the holding plate 360 receives the wafer W to be processed in another portion: the guide 361 may be operated in the reverse order of the operation. By setting it up as such: it improves the reliability of the device. Further, in a state in which the wafer W to be processed is held: the holding plate 360 can be moved at a faster speed. Further, a holding plate 360 for sucking the disk from white is used: gas ejection for adjusting the temperature to a specific temperature: even if the enthusiasm adjustment is maintained at the temperature of the wafer W to be processed by the holding plate 360. Further, even if the ion-containing gas is ejected from the holding plate 360, the anti-32-201234444 may be charged by the wafer W to be processed held on the holding plate 360. Further, even if the inert gas is ejected from the holding plate 360, it is possible to prevent, for example, copper oxidation of the device formed on the wafer W to be processed. Further, it is a matter of course that the above-described embodiments may be partially combined. Furthermore, in the above embodiment, the case where the processed wafer W is post-processed and productized is described in the post-processing station 4: However, the present invention can also be applied to, for example, peeling off from the supporting wafer. For example, when the wafer to be processed is used in the ternary integrated technology. And: The ternary integrated technology is a technique for accommodating the high integration of semiconductor devices in recent years: three-dimensional lamination of the plurality of semiconductor devices: instead of arranging a high-complexity semiconductor in a horizontal plane The technology of the device. Even in the three-dimensional integrated technology, it is required to reduce the thickness of the processed wafer to be laminated: the processed wafer is bonded to the supporting wafer and subjected to specific processing. Preferred embodiments of the present invention are described: however, the present invention is not limited to such an example. It is a matter of course that those skilled in the art can make various modifications or alterations within the scope of the invention as set forth in the claims. The present invention is not limited to this example: various aspects can be employed. The present invention is also applicable to other substrates such as an FPD (flat display) other than a substrate and a grating for a photomask. -33-201234444 BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a plan view showing a configuration of a peeling system according to the present embodiment. Figure 2 is a side view of the wafer being processed and the supporting wafer. Fig. 3 is a schematic longitudinal sectional view showing the configuration of the peeling device. Fig. 4 is a schematic longitudinal sectional view showing the configuration of the first cleaning device. Fig. 5 is a schematic cross-sectional view showing a configuration of a first cleaning device, Fig. 6 is a schematic longitudinal sectional view showing a configuration of a second cleaning device, and Fig. 7 is a view showing a second conveying device A side view of the outline of the composition. Fig. 8 is a plan view showing the configuration of the squeegee plate. Fig. 9 is a schematic longitudinal sectional view showing the configuration of a support plate. Fig. 10 is a plan view showing a schematic configuration of a white working suction cup. Fig. 11 is a flow chart showing the main construction of the peeling process. Fig. 12 is an explanatory view showing a state in which the wafer is superposed on each other by the first holding portion and the second holding portion. Fig. 13 is an explanatory view showing a state in which the second holding portion is moved in the vertical direction and the horizontal direction. Fig. 14 is an explanatory view showing how the wafer to be processed and the supporting wafer are peeled off. Fig. 15 is an explanatory view showing the arrangement of the support plate below the first holding portion. -34- 201234444 Fig. 16 is an explanatory view showing how the wafer to be processed is received from the first holding portion to the support plate. Fig. 17 is an explanatory view showing the arrangement of the white working suction cup above the support plate. Fig. 18 is an explanatory view showing a state in which the treated crystal is supported by the support plate and the white working suction cup. Fig. 19 is an explanatory view showing a state in which the front and back surfaces of the wafer to be processed supported by the support plate and the white-powered suction cup are reversed. Fig. 20 is an explanatory view showing that the processed wafer supported by the support plate and the white-powered suction cup is disposed above the porous chuck. Fig. 21 is an explanatory view showing the state in which the treated crystal is received from the support plate and the white suction cup to the porous chuck. Fig. 22 is an explanatory view showing a state in which the wafer to be processed and the support plate are washed. Fig. 23 is a schematic plan view showing the configuration of a second conveying device according to another embodiment. Fig. 24 is a schematic plan view showing the configuration of a second conveying device according to another embodiment. [Description of main component symbols] 1 : Peeling system 2 : Loading and unloading station 3 : Peeling processing station 4 : Post-processing station - 35 - 201234444 5 : Interface table 6 : Wafer transfer area 20 : First transfer device 3 0 : Peeling device 3 1 : First cleaning device 32 : Second conveying device 3 3 : Second cleaning device 41 : Third conveying device 23 0 : Support plate 23 1 : White working suction cup 240 : Supply port 243 : Support arm 2 4 4 : first drive unit 2 4 5 : second drive unit 246 : rail 250 : support arm 2 5 1 : first drive unit 2 5 2 : second drive unit 25 3 : track 3 0 0 : control unit G: adhesive S: support wafer S j · joint surface SN · non-join surface - 36 201234444 τ : coincident wafer W : processed wafer W j · joint surface W Ν · non-joined surface

Claims (1)

201234444 七、申請專利範圍： 1. 一種剝離系統：用以將以接著劑接合被處理基板和 支撐基板的重合基板剝離成被處理基板和支撐基板：該剝 離系統之特徵爲具有： 剝離處理台：其係用以對被處理基板、支撐基板及重 合基板進行特定處理； 搬入搬出台：其係對上述剝離處理台：搬入搬出被處 理基板、支撐基板或重合基板：和 第1搬運裝置：其係在上述剝離處理台和上述搬入搬 出台之間：搬運被處理基板、支撐基板或重合基板： 上述剝離處理台具有： 剝離裝置：其係用以將重合基板剝離成被處理基板和 支撐基板； 第1洗淨裝置：其係用以洗淨在上述剝離裝置被剝離 之被處理基板； 第2洗淨裝置：其係用以洗淨在上述剝離裝置被剝離 之支撐基板； 第2搬運裝置：其係用以在上述剝離裝置和上述第1 洗淨裝置之間搬運被處理基板： 上述第2搬運裝置具有·’ 支撐板：其係用以支撐在被處理基板附著有接著劑之 接合面：並且形成有對被處理基板之接合面供給洗淨液之 供給口； 保持構件：其係用以保持在被處理基板中不附著接著 -38- 201234444 劑之非接合面；及 反轉機構：其係使以上述支撐板和上述保持構件中所 支撐之被處理基板之表背面予以反轉。 2.如申請專利範圍第1項所記載之剝離系統：其中 上述第2搬運裝置具有： 第1移動機構：其係在上述剝離裝置和上述第1洗淨 裝置之間：使上述支撐板移動；和 第2移動機構：其係在上述剝離裝置和上述第1洗淨 裝置之間：使上述保持構件移動。 3 .如申請專利範圍第1或2項所記載之剝離系統：其 中 上述保持構件爲白努力吸盤。 4.如申請專利範圍第1至3項中之任一項所記載之剝 離裝置：其中 在上述剝離處理台：和對在該剝離處理台被剝離之被 處理基板進行特定之後處理之後處理台之間：具有搬運被 處理基板之介面台。 5·—種剝離方法：使用剝離系統：將以接著劑接合被 處理基板和支撐基板之重合基板：剝離成被處理基板和支 撐基板：該剝離方法之特徵爲： 上述剝離系統具有： 剝離處理台：其係用以對被處理基板、支撐基板及重 合基板進行特定處理； 搬入搬出台：其係對上述剝離處理台：搬入搬出被處 _· 39 201234444 理基板、支撐基板或重合基板；和 第1搬運裝置：其係在上述剝離處理台和上述搬入搬 出台之間：搬運被處理基板、支撐基板或重合基板： 上述剝離處理台具有： 剝離裝置：其係用以將重合基板剝離成被處理基板和 支撐基板； 第1洗淨裝置：其係用以洗淨在上述剝離裝置被剝離 之被處理基板； 第2洗淨裝置：其係用以洗淨在上述剝離裝置被剝離 之支撐基板： 第2搬運裝置：其係用以在上述剝離裝置和上述第1 洗淨裝置之間搬運被處理基板： 上述第2搬運裝置具有： ' 支撐板：其係用以支撐在被處理基板附著有接著劑之 接合面：並且形成有對被處理基板之接合面供給洗淨液之 供給口； 保持構件：其係用以保持在被處理基板中不附著接著 劑之非接合面；及 反轉機構：其係使以上述支撐板和上述保持構件中所 支撐之被處理基板之表背面予以反轉； 上述剝離方法具有： 剝離工程：其係用以在上述剝離裝置中：將重合基板 剝離成被處理基板和支撐基板； 搬運工程：其係用以藉由上述第2搬運裝置：將在上 -40- 201234444 述剝離工程中被剝離之被處理基板從上述剝離裝置搬運至 上述第1洗淨裝置； 第1洗淨工程：其係用以在上述第1洗淨裝置中：洗 淨在上述搬運工程中被搬運之被處理基板；和 第2洗淨工程：其係用以在上述第2洗淨裝置中··洗 淨在上述剝離工程中被剝離之支撐基板； 上述搬運工程係 藉由上述支撐板：將在上述剝離工程中被剝離之被處 理基板從上述剝離裝置搬出：之後：以上述支撐板和上述 保持構件夾著被處理基板而予以支撐：使該被處理基板之 表背面予以反轉： 之後：將被處理基板搬運至上述第1洗淨裝置：並且 在該第1洗淨裝置中：從上述支撐板之供給口供給洗淨液 :並且洗淨被處理基板之接合面和上述支撐板。 6·如申請專利範圍第5項所記載之剝離方法：其中 上述剝離系統即使在上述剝離處理台：和對在該剝離 處理台被剝離之被處理基板進行特定之後處理之後處理台 之間：具有搬運被處理基板之介面台 上述第1洗淨工程後：具有在上述後處理台對被處理 基板進行後處理之後處理工程。 7.—種程式：其特徵爲： 爲了藉由剝離系統實行如申請專利範圍第5或6所記 載之剝離方法：在控制該剝離系統之控制部之電腦上進行 動作。 •41 - 201234444 8 . —種電腦可讀取之記憶媒體：其特徵爲： 儲存有申請專利範圍第7項所記載之程式。 -42-201234444 VII. Patent Application Range: 1. A peeling system for peeling a superposed substrate bonded to a substrate to be processed and a supporting substrate by an adhesive into a substrate to be processed and a supporting substrate: the peeling system is characterized by: a peeling treatment station: It is used to perform specific processing on the substrate to be processed, the support substrate, and the superposed substrate. The loading/unloading station is for the peeling processing station: loading and unloading the substrate to be processed, the supporting substrate or the overlapping substrate: and the first conveying device: Between the peeling processing stage and the loading/unloading stage: transporting a substrate to be processed, a supporting substrate, or a superposed substrate: the peeling processing station includes: a peeling device for peeling the superposed substrate into a substrate to be processed and a supporting substrate; a cleaning device for cleaning a substrate to be processed which is peeled off by the peeling device, a second cleaning device for cleaning a support substrate on which the peeling device is peeled off, and a second conveying device: The substrate to be processed is transported between the peeling device and the first cleaning device: the second transport The device has a 'support plate: a support surface for supporting an adhesive attached to the substrate to be processed: and a supply port for supplying a cleaning liquid to the joint surface of the substrate to be processed; and a holding member for holding The non-joining surface of the -38-201234444 agent is not adhered to the substrate to be processed; and the reversing mechanism is configured to invert the front and back surfaces of the substrate to be processed supported by the support plate and the holding member. 2. The peeling system according to claim 1, wherein the second conveying device has: a first moving mechanism between the peeling device and the first cleaning device: moving the support plate; And a second moving mechanism between the peeling device and the first cleaning device: moving the holding member. 3. The peeling system of claim 1 or 2, wherein the holding member is a white hard sucker. 4. The peeling device according to any one of claims 1 to 3, wherein the peeling treatment station: and the processing table after the processing of the substrate to be processed which is peeled off at the peeling processing table is processed Between: It has a interface table for transporting substrates to be processed. 5. A peeling method: using a peeling system: joining a substrate to be processed and a supporting substrate by an adhesive to: a substrate to be processed and a supporting substrate: the peeling method is characterized in that: the peeling system has: a peeling treatment station : It is used to perform specific processing on the substrate to be processed, the support substrate, and the superposed substrate; and the loading and unloading station: the pair of peeling processing stations: loading and unloading the _· 39 201234444, the substrate, the supporting substrate, or the overlapping substrate; A conveying device that is disposed between the peeling processing table and the loading/unloading table: transporting a substrate to be processed, a supporting substrate, or a superposed substrate: the peeling processing station has: a peeling device for peeling off the bonded substrate into a processed a substrate and a support substrate; a first cleaning device for cleaning the substrate to be processed which is peeled off by the peeling device; and a second cleaning device for cleaning the support substrate on which the peeling device is peeled off: a second conveying device for conveying a substrate to be processed between the peeling device and the first cleaning device The second conveying device includes: a support plate for supporting a bonding surface to which an adhesive is adhered to a substrate to be processed: and a supply port for supplying a cleaning liquid to a bonding surface of the substrate to be processed; and a holding member: And a reversing mechanism for reversing the front and back surfaces of the substrate to be processed supported by the support plate and the holding member; The peeling method has: a peeling process: in the above peeling device: peeling the superposed substrate into a substrate to be processed and a supporting substrate; and carrying the project: it is used for the second carrying device: 201234444 The substrate to be processed which has been peeled off in the peeling process is transported from the peeling device to the first cleaning device, and the first cleaning device is used in the first cleaning device: washing in the transporting project a substrate to be processed to be transported; and a second cleaning process for cleaning the support substrate that is peeled off in the peeling process in the second cleaning device; In the above-described conveyance process, the substrate to be processed which has been peeled off in the peeling process is carried out from the peeling device: after the support plate and the holding member are supported by the substrate to be processed: The back surface of the substrate is reversed: Thereafter: the substrate to be processed is transported to the first cleaning device: and in the first cleaning device, the cleaning liquid is supplied from the supply port of the support plate: The bonding surface of the substrate and the support plate are processed. 6. The peeling method according to claim 5, wherein the peeling system has between the processing table after the peeling treatment table: and the processing of the substrate to be processed which is peeled off at the peeling processing table: After the first cleaning process of the interface table for transporting the substrate to be processed: after the post-processing of the substrate to be processed by the post-processing station, the process is performed. 7. A program characterized in that: in order to carry out the peeling method as recited in claim 5 or 6 by the peeling system: the operation is performed on a computer that controls the control unit of the peeling system. • 41 - 201234444 8. A computer readable memory medium characterized by: The program described in item 7 of the patent application scope is stored. -42-
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