JP5580806B2 - Peeling apparatus, peeling system, peeling method, program, and computer storage medium - Google Patents

Description

  The present invention relates to a peeling device that peels a superposed substrate from a substrate to be processed and a support substrate, a peeling system including the peeling device, a peeling method using the peeling device, a program, and a computer storage medium.

  In recent years, for example, in semiconductor device manufacturing processes, semiconductor wafers (hereinafter referred to as “wafers”) have become larger in diameter. Further, in a specific process such as mounting, it is required to make the wafer thinner. Here, for example, when a thin wafer having a large diameter is transported or polished as it is, the wafer may be warped or cracked. For this reason, in order to reinforce the wafer, for example, the wafer is attached to a wafer or a glass substrate which is a support substrate. Then, after a predetermined process such as a wafer polishing process is performed in a state where the wafer and the support substrate are bonded in this way, the wafer and the support substrate are peeled off.

  The wafer and the support substrate are peeled off using, for example, a peeling device. The peeling apparatus includes, for example, a first holder that holds a wafer, a second holder that holds a support substrate, and a nozzle that ejects liquid between the wafer and the support substrate. In this peeling apparatus, the liquid is applied between the wafer bonded from the nozzle and the support substrate with an injection pressure larger than the bonding strength between the wafer and the support substrate, preferably at least twice as large as the bonding strength. The wafer and the support substrate are peeled off by spraying (Patent Document 1).

JP-A-9-167724

  However, when the peeling apparatus described in Patent Document 1 is used, since the liquid is ejected with a large ejection pressure, the wafer or the support substrate may be damaged. In particular, since the wafer is thin, it is easily damaged.

  For example, when the wafer and the support substrate are bonded via an adhesive, the bonding strength between the wafer and the support substrate is high, and thus a liquid with a very large injection pressure is required. For this reason, a large amount of liquid is required, and a great deal of time is required to separate the wafer and the support substrate.

  Therefore, the inventors tried to soften the adhesive by performing a heat treatment on the bonded wafer and the support substrate in order to facilitate the separation of the wafer and the support substrate.

  However, if the wafer and the support substrate are simply heated, an oxide film is formed on a device such as an electronic circuit formed on the surface of the wafer. The oxide film may damage the product. Also, heating the wafer can damage the devices on the wafer.

  This invention is made | formed in view of this point, and it aims at performing the peeling process of a to-be-processed substrate and a support substrate appropriately and efficiently.

In order to achieve the above object, the present invention provides a peeling apparatus for peeling a polymerized substrate in which a substrate to be processed and a support substrate are bonded with an adhesive to the substrate to be processed and the support substrate. A temperature adjusting mechanism that adjusts the temperature of the substrate, a first holding unit that holds the substrate to be processed, a heating mechanism that heats the support substrate to a second temperature higher than the first temperature, and a second holding portion for holding the supporting substrate, possess a moving mechanism for relatively moving at least said first holding portion or the second holding portion, said first temperature is to be treated The temperature at which the adhesive between the substrate and the support substrate is not softened, and the second temperature is a temperature at which the adhesive between the substrate to be processed and the support substrate is softened . In addition, 2nd temperature is 200 to 250 degreeC, for example. The first temperature may be lower than the second temperature, but is preferably a temperature at which condensation does not occur on the substrate to be processed, for example, 17 ° C. or higher.

  According to the present invention, the substrate to be processed held by the first holding unit is adjusted to the first temperature, and the support substrate held by the second holding unit is set to the second temperature higher than the first temperature. While being heated, at least the first holding portion or the second holding portion can be relatively moved to peel off the substrate to be processed and the support substrate. Thus, by heating the support substrate to the second temperature by the second holding portion, the adhesive on the support substrate side can be heated to the second temperature and softened, and the substrate to be processed and the support substrate can be softened. It can be easily peeled off with a small load. For this reason, it can suppress that a to-be-processed substrate receives damage, and can peel a to-be-processed substrate and a support substrate appropriately and uniformly. Furthermore, the time required for the peeling treatment can be shortened as compared with the conventional case. Moreover, since the temperature of the substrate to be processed held by the first holding unit is adjusted to the first temperature lower than the second temperature, the temperature of the adhesive on the substrate to be processed is adjusted to the first temperature and softened. This prevents the surface of the substrate to be processed from being protected by the adhesive. For this reason, it can suppress that the device formed in the surface of the to-be-processed substrate oxidizes. In addition, since the substrate to be processed is adjusted to the first temperature and the surface of the substrate to be processed is protected by the adhesive, it is possible to suppress damage to the device formed on the surface of the substrate to be processed. can do. As mentioned above, according to this invention, the peeling process of a to-be-processed substrate and a support substrate can be performed appropriately and efficiently.

  The moving mechanism may relatively move at least the first holding unit or the second holding unit in the horizontal direction.

  The moving mechanism is configured so that the support substrate held by the second holding unit continuously peels from the substrate to be processed held by the first holding unit from the outer periphery toward the center. The outer peripheral portion of the second holding portion may be held and moved in the vertical direction.

  The peeling device has a diameter smaller than the thickness of the adhesive between the substrate to be processed and the support substrate, a wire that cuts the adhesive by inserting the adhesive in the surface direction of the substrate to be processed and the support substrate, You may have the sending-out part which sends out a wire, and the winding-up part which winds up the said wire which was sent out from the said sending part and penetrated the adhesive agent.

  The peeling apparatus may include a solvent supply unit that is provided between the feeding unit and the winding unit and supplies an adhesive solvent to the wire before the adhesive is inserted.

  The peeling device may include a heating unit that is provided between the feeding unit and the winding unit and that heats the wire before the adhesive is inserted.

  The heating unit may pass a current through the wire.

  The peeling device may include a cleaning unit that is provided between the feeding unit and the winding unit and that cleans the wire through which an adhesive is inserted.

  The said washing | cleaning part may supply the solvent of an adhesive agent to the said wire which penetrated the adhesive agent.

  The said washing | cleaning part may contact the said wire which penetrated the adhesive agent, and may remove an adhesive agent.

  The peeling apparatus is a laser that irradiates a laser beam having a diameter smaller than the thickness of the adhesive between the substrate to be processed and the support substrate and penetrating the adhesive in the surface direction of the substrate to be processed and the support substrate. You may have a light irradiation part.

  The present invention according to another aspect is a peeling system including the peeling device, wherein the peeling device, a first cleaning device for cleaning a substrate to be processed peeled by the peeling device, and peeling by the peeling device. A second cleaning device for cleaning the supported substrate, a loading / unloading station for loading / unloading a substrate to be processed, a supporting substrate or a superposed substrate with respect to the processing station, and the processing station And a transfer device for transferring a substrate to be processed, a support substrate, or a superposed substrate to and from the loading / unloading station.

According to another aspect of the present invention, there is provided a peeling method for peeling a superposed substrate in which a substrate to be processed and a support substrate are bonded with an adhesive, to the substrate to be processed and the support substrate, and held by the first holding unit. While adjusting the substrate to be processed to the first temperature and heating the support substrate held by the second holding unit to a second temperature higher than the first temperature, at least the first holding unit or the first holding unit The first holding temperature is a temperature at which the adhesive between the substrate to be processed and the support substrate is not softened, and the second holding portion is moved relatively . The temperature is characterized in that the adhesive between the substrate to be processed and the support substrate is softened.

  At least the first holding unit or the second holding unit may be moved relatively in the horizontal direction to peel off the substrate to be processed and the support substrate.

  The outer peripheral portion of the second holding portion is moved in the vertical direction, the support substrate is continuously peeled from the substrate to be processed from the outer peripheral portion toward the central portion, and then the entire second holding portion is moved in the vertical direction. The substrate to be processed and the support substrate may be peeled off.

  Bonding the wire in the surface direction of the substrate to be processed and the support substrate while moving the wire having a diameter smaller than the thickness of the adhesive between the substrate to be processed and the support substrate in one direction between the sending part and the winding part The adhesive may be cut by inserting the adhesive.

  You may supply the solvent of an adhesive agent to the said wire after it sends out from the said sending part and before inserting an adhesive agent.

  You may heat the said wire after it is sent out from the said sending part and before inserting an adhesive agent.

  The heating of the wire may be performed by passing an electric current through the wire.

  You may wash | clean the said wire after inserting an adhesive agent and before winding up by the said winding-up part.

  The wire may be cleaned by supplying an adhesive solvent to the wire.

  The wire may be cleaned by bringing a brush into contact with the wire.

  The adhesive may be cut by inserting a laser beam having a diameter smaller than the thickness of the adhesive between the substrate to be processed and the support substrate into the adhesive in the surface direction of the substrate to be processed and the support substrate.

  According to another aspect of the present invention, there is provided a program that operates on a computer of a control unit that controls the peeling device in order to cause the peeling device to execute the peeling method.

  According to another aspect of the present invention, a readable computer storage medium storing the program is provided.

  ADVANTAGE OF THE INVENTION According to this invention, the peeling process of a to-be-processed substrate and a support substrate can be performed appropriately and efficiently.

It is a top view which shows the outline of a structure of the peeling system concerning this Embodiment. It is a side view of a to-be-processed wafer and a support wafer. It is a longitudinal cross-sectional view which shows the outline of a structure of a peeling apparatus. It is a longitudinal cross-sectional view which shows the outline of a structure of a 1st washing | cleaning apparatus. It is a cross-sectional view which shows the outline of a structure of a 1st washing | cleaning apparatus. It is a longitudinal cross-sectional view which shows the outline of a structure of a 2nd washing | cleaning apparatus. It is a side view which shows the outline of a structure of a 2nd conveying apparatus. It is a longitudinal cross-sectional view which shows the outline of a structure of an inversion apparatus. It is a longitudinal cross-sectional view which shows the outline of a structure of an inspection apparatus. It is a cross-sectional view which shows the outline of a structure of a test | inspection apparatus. It is a flowchart which shows the main processes of peeling processing. It is explanatory drawing which shows a mode that the superposition | polymerization wafer was hold | maintained with the 1st holding | maintenance part and the 2nd holding | maintenance part. It is explanatory drawing which shows a mode that a 2nd holding | maintenance part is moved to a perpendicular direction and a horizontal direction. It is explanatory drawing which shows a mode that the to-be-processed wafer and the support wafer were peeled. It is explanatory drawing which shows a mode that a to-be-processed wafer is delivered from the 1st holding | maintenance part of a peeling apparatus to the Bernoulli chuck of a 2nd conveying apparatus. It is explanatory drawing which shows a mode that a to-be-processed wafer is delivered from the Bernoulli chuck of a 2nd conveying apparatus to the porous chuck | zipper of a 1st washing | cleaning apparatus. It is explanatory drawing which shows a mode that a to-be-processed wafer is delivered from the Bernoulli chuck of a 3rd conveying apparatus to the 2nd holding | maintenance part of an inversion apparatus. It is explanatory drawing which shows a mode that a to-be-processed wafer is delivered to the 1st holding | maintenance part from the 2nd holding | maintenance part of an inversion apparatus. It is explanatory drawing which shows the state by which the to-be-processed wafer was delivered from the 2nd holding | maintenance part of the inversion apparatus to the 1st holding | maintenance part. It is explanatory drawing which shows the state by which the to-be-processed wafer was delivered from the 1st holding | maintenance part of the inversion apparatus to the Bernoulli chuck of the 3rd conveying apparatus. It is a longitudinal cross-sectional view which shows the outline of a structure of the peeling apparatus concerning other embodiment. It is a top view of the 1st vertical movement part. It is explanatory drawing which shows a mode that the superposition | polymerization wafer was hold | maintained with the 1st holding | maintenance part and the 2nd holding | maintenance part. It is explanatory drawing which shows a mode that a 2nd holding | maintenance part outer peripheral part is moved vertically downward by a 1st vertical movement part. It is explanatory drawing which shows a mode that a 2nd holding | maintenance part is moved vertically downward by a 2nd vertical movement part. It is explanatory drawing which shows a mode that the to-be-processed wafer and the support wafer were peeled. It is a longitudinal cross-sectional view which shows the outline of a structure of the peeling apparatus concerning other embodiment. It is a cross-sectional view which shows the outline of a structure of the peeling apparatus concerning other embodiment. It is a cross-sectional view which shows the outline of a structure of the peeling apparatus concerning other embodiment. It is a longitudinal cross-sectional view which shows the outline of a structure of the peeling apparatus concerning other embodiment. It is a longitudinal cross-sectional view which shows the outline of a structure of the peeling apparatus concerning other embodiment. It is a longitudinal cross-sectional view which shows the outline of a structure of the peeling apparatus concerning other embodiment. It is a longitudinal cross-sectional view which shows the outline of a structure of the peeling apparatus concerning other embodiment. It is a longitudinal cross-sectional view which shows the outline of a structure of the peeling apparatus concerning other embodiment. It is a cross-sectional view which shows the outline of a structure of the peeling apparatus concerning other embodiment. It is a longitudinal cross-sectional view which shows the outline of a structure of the peeling apparatus concerning other embodiment. It is a cross-sectional view which shows the outline of a structure of the peeling apparatus concerning other embodiment. It is explanatory drawing which shows a mode that an adhesive agent is cut | disconnected with a wire. It is explanatory drawing which shows a mode that the to-be-processed wafer and the support wafer were peeled. It is a cross-sectional view which shows the outline of a structure of the peeling apparatus concerning other embodiment.

  Embodiments of the present invention will be described below. FIG. 1 is a plan view showing an outline of a configuration of a peeling system 1 according to the present embodiment.

In the peeling system 1, as shown in FIG. 2, a superposed wafer T as a superposed substrate in which a target wafer W as a target substrate and a support wafer S as a support substrate are bonded with an adhesive G is used as a target wafer W. And the support wafer S is peeled off. Hereinafter, in the processing target wafer W, a surface bonded to the support wafer S via the adhesive G is referred to as “bonding surface W _J ”, and a surface opposite to the bonding surface W _J is referred to as “non-bonding surface W _N ”. That's it. Similarly, in the support wafer S, a surface bonded to the processing target wafer W via the adhesive G is referred to as “bonding surface S _J ”, and a surface opposite to the bonding surface S _J is referred to as “non-bonding surface S _N”. " Note that wafer W is a wafer as a product, for example, a plurality of devices having a plurality of electronic circuits and the like on the bonding surface W _J is formed. The wafer W is, for example, non-bonding surface _{W N} is polished, has been thinned (e.g., thickness 50 .mu.m to 100 .mu.m) is. The support wafer S is a wafer having a disk shape having the same diameter as the diameter of the wafer W to be processed and supporting the wafer W to be processed. In this embodiment, the case where a wafer is used as the support substrate will be described, but another substrate such as a glass substrate may be used.

As shown in FIG. 1, the peeling system 1 includes cassettes C _W , C _S , and C _T that can accommodate, for example, a plurality of wafers W to be processed, a plurality of support wafers S, and a plurality of superposed wafers T, respectively. A loading / unloading station 2 for loading / unloading, a processing station 3 including various processing apparatuses for performing predetermined processing on the processing target wafer W, the supporting wafer S, and the overlapped wafer T, and a post-processing station 4 adjacent to the processing station 3 And the interface station 5 for transferring the wafer W to be processed between the two.

The carry-in / out station 2 and the processing station 3 are arranged side by side in the X direction (vertical direction in FIG. 1). A wafer transfer area 6 is formed between the carry-in / out station 2 and the processing station 3. The interface station 5 is disposed on the Y direction negative direction side (left direction side in FIG. 1) of the processing station 3. An inspection apparatus 7 for inspecting the wafer W to be processed before being transferred to the post-processing station 4 is disposed on the positive side in the X direction of the interface station 5 (upward in FIG. 1). Further, the opposite side of the inspection apparatus 7 across the interface station 5, i.e. the X-direction negative side of the interface station 5 (side downward direction in FIG. 1), the bonding surface W _J and wafer W after inspection A post-inspection cleaning station 8 that performs cleaning of the non-bonded surface W _N and inversion of the front and back surfaces of the wafer W to be processed is disposed.

The loading / unloading station 2 is provided with a cassette mounting table 10. A plurality of, for example, three cassette mounting plates 11 are provided on the cassette mounting table 10. The cassette mounting plates 11 are arranged in a line in the Y direction (left and right direction in FIG. 1). These cassette mounting plates 11, cassettes _C W to the outside of the peeling system _1, C S, when loading and unloading the _{C T,} a cassette _{C W,} C S, can be placed on _{C T} . Thus, the carry-in / out station 2 is configured to be capable of holding a plurality of wafers W to be processed, a plurality of support wafers S, and a plurality of superposed wafers T. The number of cassette mounting plates 11 is not limited to the present embodiment, and can be arbitrarily determined. Further, the plurality of superposed wafers T carried into the carry-in / out station 2 are inspected in advance, and a superposed wafer T including a normal target wafer W and a superposed wafer T including a defective target wafer W are obtained. And have been determined.

  A first transfer device 20 is disposed in the wafer transfer region 6. The first transfer device 20 includes a transfer arm that can move around, for example, a vertical direction, a horizontal direction (Y direction, X direction), and a vertical axis. The first transfer device 20 moves in the wafer transfer region 6 and can transfer the processing target wafer W, the support wafer S, and the overlapped wafer T between the transfer-in / out station 2 and the processing station 3.

  The processing station 3 includes a peeling device 30 that peels the superposed wafer T into the processing target wafer W and the supporting wafer S. A first cleaning device 31 that cleans the wafer to be processed W that has been peeled off is disposed on the negative side in the Y direction of the peeling device 30 (left side in FIG. 1). A second transfer device 32 is provided between the peeling device 30 and the first cleaning device 31. Further, a second cleaning device 33 for cleaning the peeled support wafer S is arranged on the positive side in the Y direction of the peeling device 30 (right side in FIG. 1). Thus, in the processing station 3, the first cleaning device 31, the second transfer device 32, the peeling device 30, and the second cleaning device 33 are arranged in this order from the interface station 5 side.

In the inspection apparatus 7, the presence or absence of the residue of the adhesive G on the processing target wafer W peeled by the peeling apparatus 30 is inspected. In the post-inspection cleaning station 8, the wafer W to be processed in which the residue of the adhesive G is confirmed by the inspection device 7 is cleaned. The inspection after cleaning station 8, the bonding surface cleaning device 40 for cleaning the joint surface W _J of wafer W, the non-bonding surface cleaning apparatus 41 for cleaning the non-bonding surface W _N of the wafer W, the wafer W Has a reversing device 42 for vertically reversing the front and back surfaces. The bonding surface cleaning device 40, the non-bonding surface cleaning device 41, and the reversing device 42 are arranged side by side in the Y direction from the post-processing station 4 side.

  The interface station 5 is provided with a third transport device 51 that is movable on a transport path 50 extending in the Y direction. The third transfer device 51 is also movable in the vertical direction and around the vertical axis (θ direction), and the wafer to be processed between the processing station 3, the post-processing station 4, the inspection device 7, and the post-inspection cleaning station 8. W can be conveyed.

  In the post-processing station 4, predetermined post-processing is performed on the processing target wafer W peeled off in the processing station 3. As predetermined post-processing, for example, processing for mounting the processing target wafer W, processing for inspecting electrical characteristics of devices on the processing target wafer W, processing for dicing the processing target wafer W for each chip, and the like are performed.

  Next, the structure of the peeling apparatus 30 mentioned above is demonstrated. As shown in FIG. 3, the peeling device 30 includes a processing container 100 that can seal the inside. A loading / unloading port (not shown) for the processing target wafer W, the support wafer S, and the overlapped wafer T is formed on the side surface of the processing container 100, and an opening / closing shutter (not shown) is provided at the loading / unloading port.

  An exhaust port 101 for exhausting the atmosphere inside the processing container 100 is formed on the bottom surface of the processing container 100. An exhaust pipe 103 communicating with an exhaust device 102 such as a vacuum pump is connected to the exhaust port 101.

  Inside the processing container 100, a first holding unit 110 that holds the wafer W to be processed by suction on the lower surface and a second holding unit 111 that places and holds the support wafer S on the upper surface are provided. . The first holding unit 110 is provided above the second holding unit 111 and is disposed so as to face the second holding unit 111. That is, in the inside of the processing container 100, the peeling process is performed on the superposed wafer T in a state where the processing target wafer W is arranged on the upper side and the supporting wafer S is arranged on the lower side.

For example, a porous chuck is used for the first holding unit 110. The first holding part 110 has a plate-like main body part 120. A porous 121 that is a porous body is provided on the lower surface side of the main body 120. Porous 121 has, for example, substantially the same diameter as the processed wafer W, and contact with the non-bonding surface W _N of the treated wafer W. For example, silicon carbide is used as the porous 121.

A suction space 122 is formed inside the main body 120 and above the porous 121. The suction space 122 is formed so as to cover the porous 121, for example. A suction tube 123 is connected to the suction space 122. The suction pipe 123 is connected to a negative pressure generator (not shown) such as a vacuum pump. Then, the non-joint surface W _{N of the} wafer to be processed is sucked from the suction pipe 123 through the suction space 122 and the porous 121, and the wafer to be processed W is sucked and held by the first holding unit 110.

  A temperature adjustment mechanism 124 that adjusts the temperature of the wafer W to be processed to the first temperature is provided inside the main body 120 and above the suction space 122. For the temperature adjusting mechanism 124, for example, a Peltier element is used. The first temperature is 23 ° C., for example, as will be described later.

  A support plate 130 that supports the first holding unit 110 is provided on the upper surface of the first holding unit 110. The support plate 130 is supported on the ceiling surface of the processing container 100. Note that the support plate 130 of the present embodiment may be omitted, and the first holding unit 110 may be supported in contact with the ceiling surface of the processing container 100.

  A suction tube 140 for sucking and holding the support wafer S is provided inside the second holding unit 111. The suction tube 140 is connected to a negative pressure generator (not shown) such as a vacuum pump.

  In addition, a heating mechanism 141 for heating the support wafer S to the second temperature is provided inside the second holding unit 111. For the heating mechanism 141, for example, a heater is used. In addition, 2nd temperature is temperature higher than 1st temperature so that it may mention later, Comprising: For example, it is 200 to 250 degreeC.

  Below the second holding unit 111, a moving mechanism 150 that moves the second holding unit 111 and the supporting wafer S in the vertical direction and the horizontal direction is provided. The moving mechanism 150 includes a vertical moving unit 151 that moves the second holding unit 111 in the vertical direction and a horizontal moving unit 152 that moves the second holding unit 111 in the horizontal direction.

  The vertical moving unit 151 moves up and down the support plate 160 that supports the lower surface of the second holding unit 111 and causes the first holding unit 110 and the second holding unit 111 to approach and separate in the vertical direction. The drive unit 161 and the support member 162 that supports the support plate 160 are provided. The drive unit 161 includes, for example, a ball screw (not shown) and a motor (not shown) that rotates the ball screw. The support member 162 is configured to be extendable in the vertical direction, and is provided at, for example, three locations between the support plate 160 and a support body 171 described later.

  The horizontal moving unit 152 includes a rail 170 extending along the X direction (left and right direction in FIG. 3), a support 171 attached to the rail 170, and a drive unit 172 that moves the support 171 along the rail 170. have. The drive unit 172 includes, for example, a ball screw (not shown) and a motor (not shown) that rotates the ball screw.

  In addition, below the 2nd holding | maintenance part 111, the raising / lowering pin (not shown) for supporting and raising / lowering the superposition | polymerization wafer T or the support wafer S from the downward direction is provided. The elevating pin is inserted through a through hole (not shown) formed in the second holding part 111 and can protrude from the upper surface of the second holding part 111.

  Next, the configuration of the first cleaning device 31 described above will be described. As shown in FIG. 4, the first cleaning device 31 has a processing container 180 that can be sealed inside. A loading / unloading port (not shown) for the processing target wafer W is formed on the side surface of the processing container 180, and an opening / closing shutter (not shown) is provided at the loading / unloading port.

A porous chuck 190 that holds and rotates the wafer W to be processed is provided at the center of the processing container 180. The porous chuck 190 includes a plate-shaped main body 191 and a porous 192 that is a porous body provided on the upper surface side of the main body 191. The porous 192 has, for example, substantially the same diameter as the wafer to be processed W, and is in contact with the non-joint surface W _{N of the} wafer to be processed W. As the porous 192, for example, silicon carbide is used. A suction pipe (not shown) is connected to the porous 192, and the non-bonded surface W _N of the wafer to be processed W is sucked from the suction pipe through the porous 192, so that the wafer to be processed W is placed on the porous chuck 190. Can be adsorbed and retained.

  Below the porous chuck 190, for example, a chuck driving unit 193 provided with a motor or the like is provided. The porous chuck 190 can be rotated at a predetermined speed by the chuck driving unit 193. Further, the chuck driving unit 193 is provided with an elevating drive source such as a cylinder, for example, and the porous chuck 190 is movable up and down.

  Around the porous chuck 190, there is provided a cup 194 that receives and collects the liquid scattered or dropped from the wafer W to be processed. Connected to the lower surface of the cup 194 are a discharge pipe 195 for discharging the collected liquid and an exhaust pipe 196 for evacuating and exhausting the atmosphere in the cup 194.

  As shown in FIG. 5, a rail 200 extending along the Y direction (left and right direction in FIG. 5) is formed on the negative side of the cup 194 in the X direction (downward direction in FIG. 5). The rail 200 is formed, for example, from the outside of the cup 194 on the Y direction negative direction (left direction in FIG. 5) side to the outside of the Y direction positive direction (right direction in FIG. 5) side. An arm 201 is attached to the rail 200.

  As shown in FIGS. 4 and 5, the arm 201 supports a cleaning liquid nozzle 202 that supplies a cleaning liquid, for example, an organic solvent that is a solvent for the adhesive G, to the wafer W to be processed. The arm 201 is movable on the rail 200 by a nozzle driving unit 203 shown in FIG. As a result, the cleaning liquid nozzle 202 can move from the standby unit 204 installed on the outer side of the cup 194 on the positive side in the Y direction to above the center of the wafer W to be processed in the cup 194, and further on the wafer W to be processed. Can be moved in the radial direction of the wafer W to be processed. The arm 201 can be moved up and down by a nozzle driving unit 203 and the height of the cleaning liquid nozzle 202 can be adjusted.

  For example, a two-fluid nozzle is used as the cleaning liquid nozzle 202. As shown in FIG. 4, a supply pipe 210 that supplies the cleaning liquid to the cleaning liquid nozzle 202 is connected to the cleaning liquid nozzle 202. The supply pipe 210 communicates with a cleaning liquid supply source 211 that stores the cleaning liquid therein. The supply pipe 210 is provided with a supply device group 212 including a valve for controlling the flow of the cleaning liquid, a flow rate adjusting unit, and the like. The cleaning liquid nozzle 202 is connected to a supply pipe 213 that supplies an inert gas such as nitrogen gas to the cleaning liquid nozzle 202. The supply pipe 213 communicates with a gas supply source 214 that stores an inert gas therein. The supply pipe 213 is provided with a supply device group 215 including a valve for controlling the flow of the inert gas, a flow rate adjusting unit, and the like. Then, the cleaning liquid and the inert gas are mixed in the cleaning liquid nozzle 202 and supplied from the cleaning liquid nozzle 202 to the wafer W to be processed. In the following, a mixture of a cleaning liquid and an inert gas may be simply referred to as “cleaning liquid”.

  In addition, below the porous chuck 190, lifting pins (not shown) for supporting and lifting the wafer to be processed W from below may be provided. In such a case, the elevating pins can pass through a through hole (not shown) formed in the porous chuck 190 and protrude from the upper surface of the porous chuck 190. Then, instead of raising and lowering the porous chuck 190, the raising and lowering pins are raised and lowered, and the wafer W to be processed is transferred to and from the porous chuck 190.

  The configuration of the second cleaning device 33 is substantially the same as the configuration of the first cleaning device 31 described above. As shown in FIG. 6, the second cleaning device 33 is provided with a spin chuck 220 instead of the porous chuck 190 of the first cleaning device 31. The spin chuck 220 has a horizontal upper surface, and a suction port (not shown) for sucking, for example, the support wafer S is provided on the upper surface. The support wafer S can be sucked and held on the spin chuck 220 by suction from the suction port. Since the other structure of the 2nd washing | cleaning apparatus 33 is the same as that of the structure of the 1st washing | cleaning apparatus 31 mentioned above, description is abbreviate | omitted.

In the second cleaning device 33, below the spin chuck 220, it has a back rinse nozzle for injecting a cleaning liquid toward a back surface of the processing the wafer W, i.e. the non-bonding surface W _N (not shown) is provided May be. The non-bonded surface W _N of the wafer to be processed W and the outer peripheral portion of the wafer to be processed W are cleaned by the cleaning liquid sprayed from the back rinse nozzle.

  Next, the configuration of the second transport device 32 described above will be described. The second transfer device 32 has a Bernoulli chuck 230 that holds the wafer W to be processed as shown in FIG. Bernoulli chuck 230 is supported by support arm 231. The support arm 231 is supported by the first drive unit 232. The first drive unit 232 allows the support arm 231 to rotate around the horizontal axis and extend and contract in the horizontal direction. A second driving unit 233 is provided below the first driving unit 232. By the second drive unit 233, the first drive unit 232 can rotate around the vertical axis and can move up and down in the vertical direction.

  In addition, since the 3rd conveying apparatus 51 has the structure similar to the 2nd conveying apparatus 32 mentioned above, description is abbreviate | omitted. However, the second drive unit 232 of the third transport device 51 is attached to the transport path 50 shown in FIG. 1, and the third transport device 51 is movable on the transport path 50.

  Next, the configuration of the reversing device 42 described above will be described. As shown in FIG. 8, the reversing device 42 includes a processing container 240 that houses a plurality of devices therein. A loading / unloading port (not shown) for loading / unloading the wafer W to be processed by the third transfer device 51 is formed on the side surface of the processing container 240. (Not shown) is provided.

  An exhaust port 250 for exhausting the atmosphere inside the processing container 240 is formed on the bottom surface of the processing container 240. An exhaust pipe 252 communicating with an exhaust device 251 such as a vacuum pump is connected to the exhaust port 250.

  Inside the processing container 240, a first holding unit 260 that holds the wafer W to be processed on the lower surface and a second holding unit 261 that holds the wafer W to be processed on the upper surface are provided. The first holding unit 260 is provided above the second holding unit 261 and is disposed to face the second holding unit 261. For example, the first holding unit 260 and the second holding unit 261 have substantially the same diameter as the wafer W to be processed. Further, Bernoulli chucks are used for the first holding unit 260 and the second holding unit 261. Thereby, the 1st holding | maintenance part 260 and the 2nd holding | maintenance part 261 can hold | maintain the whole surface of the single side | surface of the to-be-processed wafer W, respectively, non-contactingly.

  A support plate 262 that supports the first holding unit 260 is provided on the upper surface of the first holding unit 260. Note that the support plate 262 of the present embodiment may be omitted, and the first holding unit 260 may be supported in contact with the ceiling surface of the processing container 240.

  Below the second holding part 261, a moving mechanism 270 for moving the second holding part 261 in the vertical direction is provided. The moving mechanism 270 drives the support plate 271 that supports the lower surface of the second holding unit 261, and moves the support plate 271 up and down so that the first holding unit 260 and the second holding unit 261 approach and separate in the vertical direction. Part 272. The driving unit 272 is supported by a support body 273 provided on the bottom surface of the processing container 240. A support member 274 that supports the support plate 271 is provided on the upper surface of the support body 273. The support member 274 is configured to be extendable and contractible in the vertical direction, and can freely expand and contract when the support plate 271 is moved up and down by the drive unit 272.

  Next, the configuration of the above-described inspection apparatus 7 will be described. The inspection apparatus 7 has a processing container 280 as shown in FIGS. 9 and 10. A loading / unloading port (not shown) for the wafer W to be processed is formed on the side surface of the processing container 280, and an opening / closing shutter (not shown) is provided at the loading / unloading port.

In the processing container 280, a porous chuck 290 that holds the processing target wafer W is provided. The porous chuck 290 includes a plate-shaped main body 291 and a porous 292 that is a porous body provided on the upper surface side of the main body 291. The porous 292 has, for example, substantially the same diameter as the wafer to be processed W, and is in contact with the non-joint surface W _{N of the} wafer to be processed W. As the porous 292, for example, silicon carbide is used. A suction pipe (not shown) is connected to the porous 292, and the non-bonding surface W _N of the wafer to be processed W is sucked from the suction pipe through the porous 292, so that the wafer to be processed W is placed on the porous chuck 290. Can be adsorbed and retained.

  A chuck driving unit 293 is provided below the porous chuck 290. By this chuck drive unit 293, the porous chuck 290 is rotatable. Further, the chuck driving unit 293 is provided on the bottom surface in the processing container 280 and is attached on a rail 294 extending along the Y direction. The porous chuck 290 can be moved along the rail 294 by the chuck driving unit 293. That is, the porous chuck 290 is between the delivery position P1 for loading / unloading the processing target wafer W from / to the outside of the processing container 280 and the alignment position P2 for adjusting the position of the notch portion of the processing target wafer W. I can move.

  A sensor 295 that detects the position of the notch portion of the wafer W to be processed held by the porous chuck 290 is provided at the alignment position P2. The position of the notch portion of the wafer W to be processed can be adjusted by rotating the porous chuck 290 by the chuck driving portion 293 while detecting the position of the notch portion by the sensor 295.

  An imaging device 300 is provided on the side surface of the processing container 280 on the alignment position P2 side. For the imaging device 300, for example, a wide-angle CCD camera is used. A half mirror 301 is provided near the upper center of the processing container 280. The half mirror 301 is provided at a position facing the imaging device 300 and is inclined by 45 degrees from the vertical direction. An illumination device 302 that can change the illuminance is provided above the half mirror 301, and the half mirror 301 and the illumination device 302 are fixed to the upper surface of the processing container 280. In addition, the imaging device 300, the half mirror 301, and the illumination device 302 are respectively provided above the processing target wafer W held by the porous chuck 290. The illumination from the illumination device 302 passes through the half mirror 301 and is illuminated downward. Therefore, the reflected light of the object in this irradiation region is reflected by the half mirror 301 and taken into the imaging device 300. That is, the imaging device 300 can capture an object in the irradiation area. Then, the captured image of the processing target wafer W is output to the control unit 350 described later, and the control unit 350 inspects whether or not the adhesive G remains on the processing target wafer W.

  The peeling system 1 is provided with a control unit 350 as shown in FIG. The control unit 350 is a computer, for example, and has a program storage unit (not shown). The program storage unit stores a program for controlling processing of the processing target wafer W, the supporting wafer S, and the overlapped wafer T in the peeling system 1. The program storage unit also stores a program for controlling the operation of drive systems such as the above-described various processing apparatuses and transport apparatuses to realize a peeling process described later in the peeling system 1. The program is recorded on a computer-readable storage medium H such as a computer-readable hard disk (HD), a flexible disk (FD), a compact disk (CD), a magnetic optical desk (MO), or a memory card. May have been installed in the control unit 350 from the storage medium H.

  Next, the peeling process method of the to-be-processed wafer W and the support wafer S performed using the peeling system 1 comprised as mentioned above is demonstrated. FIG. 11 is a flowchart showing an example of main steps of the peeling process.

First, a cassette C _T accommodating a plurality of bonded wafer _T, an empty cassette C _W, and an empty cassette C _S is placed on the predetermined cassette mounting plate 11 of the carry-out station 2. The superposed wafer _T in the cassette CT is taken out by the first transfer device 20 and transferred to the peeling device 30 of the processing station 3. At this time, the superposed wafer T is transported in a state where the processing target wafer W is disposed on the upper side and the support wafer S is disposed on the lower side.

The overlapped wafer T carried into the peeling apparatus 30 is sucked and held by the second holding unit 111. Thereafter, the second holding unit 111 is raised by the moving mechanism 150, and the overlapped wafer T is sandwiched and held between the first holding unit 110 and the second holding unit 111 as shown in FIG. At this time, the non-bonding surface W _N of the wafer W is held by suction on the first holding portion 110, the non-bonding surface S _N of the support wafer S is held by suction to the second holding portion 111.

  Thereafter, the support wafer S held by the second holding unit 111 is heated to a second temperature, for example, 200 ° C. to 250 ° C. by the heating mechanism 141. This second temperature is a temperature at which the adhesive G softens. And in the adhesive G between the to-be-processed wafer W and the support wafer S, the adhesive G by the side of the support wafer S softens.

On the other hand, while the supporting wafer S held on the second holding unit 111 is heated to the second temperature, the wafer W to be processed held on the first holding unit 110 is heated to the first temperature by the temperature adjustment mechanism 124. For example, the temperature is adjusted to 23 ° C. This first temperature is lower than at least the second temperature and is a temperature at which the adhesive G does not soften. In the adhesive G between the processing target wafer W and the support wafer S, the adhesive G on the processing target wafer W side is not softened. In other words, a state where the bonding surface W _J of wafer W is protected to the adhesive G. Therefore, it is possible to devices formed on the bonding surface W _J of wafer W can be inhibited from oxidation. Further, the temperature control in the first temperature wafer W is low temperature, and since a state where the bonding surface W _J of wafer W is protected to the adhesive G, formed on the bonding surface W _J The damaged device can be prevented from being damaged. The first temperature is preferably as low as possible from the viewpoint of suppressing the oxidation and damage of the device, but the first temperature is 17 ° C. or higher in order to prevent the wafer W to be processed from condensing. Is preferred.

  Subsequently, while maintaining the softened state of the adhesive G on the support wafer S side by the heating mechanism 141, the second holding unit 111 and the support wafer S are moved vertically and horizontally by the moving mechanism 150 as shown in FIG. That is, it is moved diagonally downward. At this time, since the adhesive G on the support wafer S side is softened, the second holding part 111 can be easily moved with a small load. And as shown in FIG. 14, the to-be-processed wafer W hold | maintained at the 1st holding | maintenance part 110 and the support wafer S hold | maintained at the 2nd holding | maintenance part 111 are peeled (process A1 of FIG. 11).

At this time, the second holding unit 111 moves 100 μm in the vertical direction and moves 300 mm in the horizontal direction. In the present embodiment, the thickness of the adhesive G in bonded wafer T is a 30μm~40μm example, the height of the devices formed on the bonding surface W _J of the processing target wafer W (bump), for example 20 μm. Therefore, the distance between the device on the processing target wafer W and the support wafer S is very small. Therefore, for example, when the second holding unit 111 is moved only in the horizontal direction, the device and the support wafer S may come into contact with each other and the device may be damaged. In this regard, by moving the second holding unit 111 in the horizontal direction and also in the vertical direction as in the present embodiment, contact between the device and the support wafer S is avoided, and damage to the device is suppressed. be able to. The ratio of the vertical movement distance and the horizontal movement distance of the second holding unit 111 is set based on the height of the device (bump) on the wafer W to be processed.

  Thereafter, the wafer W to be processed peeled off by the peeling device 30 is transferred to the first cleaning device 31 by the second transfer device 32. Here, a transfer method of the wafer W to be processed by the second transfer device 32 will be described.

As shown in FIG. 15, the support arm 231 of the second transfer device 32 is extended, and the Bernoulli chuck 230 is disposed below the processing target wafer W held by the first holding unit 110. Thereafter, the Bernoulli chuck 230 is raised, and the suction of the wafer W to be processed from the suction tube 123 in the first holding unit 110 is stopped. Then, the processing target wafer W is delivered from the first holding unit 110 to the Bernoulli chuck 230. Thereafter, the Bernoulli chuck 230 is lowered to a predetermined position. Note that the wafer W to be processed is held in a non-contact state by the Bernoulli chuck 230. Therefore, wafer W is held without device on the bonding surface W _J of wafer W suffers damage. At this time, the second holding unit 111 moves to a position facing the first holding unit 110.

  Next, as shown in FIG. 16, the support arm 231 of the second transport device 32 is rotated to move the Bernoulli chuck 230 above the porous chuck 190 of the first cleaning device 31, and the Bernoulli chuck 230 is reversed. Then, the processing target wafer W is directed downward. At this time, the porous chuck 190 is raised above the cup 194 and kept waiting. Thereafter, the wafer W to be processed is delivered from the Bernoulli chuck 230 to the porous chuck 190 and held by suction.

When the wafer to be processed W is sucked and held on the porous chuck 190 in this way, the porous chuck 190 is lowered to a predetermined position. Subsequently, the arm 201 moves the cleaning liquid nozzle 202 of the standby unit 204 to above the center of the wafer W to be processed. Thereafter, while rotating the wafer W by the porous chuck 190, and supplies the cleaning liquid from the cleaning liquid nozzle 202 to the bonding surface W _J of wafer W. Supplied cleaning liquid is diffused over the entire surface of the bonding surface W _J of wafer W by the centrifugal force, the bonding surface W _J of the wafer W is cleaned (step A2 in FIG. 11).

  Here, as described above, the plurality of superposed wafers T carried into the carry-in / out station 2 have been inspected in advance, and the superposed wafer T including the normal target wafer W and the defective target wafer W are arranged. The superposed wafer T is discriminated.

The normal processing wafer W peeled from the normal superposed wafer T is inspected by the third transfer device 51 with the non-bonding surface W _N facing downward after the bonding surface W _J is cleaned in step A2. It is conveyed to the device 7. Note that the transfer of the wafer W to be processed by the third transfer device 51 is substantially the same as the transfer of the wafer W to be processed by the second transfer device 32 described above, and a description thereof will be omitted.

  The wafer to be processed W transferred to the inspection apparatus 7 is held on the porous chuck 290 at the delivery position P1. Subsequently, the porous chuck 290 is moved to the alignment position P2 by the chuck driving unit 293. Next, the porous chuck 290 is rotated by the chuck driving unit 293 while detecting the position of the notch portion of the wafer W to be processed by the sensor 295. And the position of the notch part of the to-be-processed wafer W is adjusted, and the said to-be-processed wafer W is arrange | positioned in a predetermined direction.

After that, the chuck driving unit 293 moves the porous chuck 290 from the alignment position P2 to the delivery position P1. Then, when the wafer W to be processed passes under the half mirror 301, the illumination apparatus 302 illuminates the wafer W to be processed. The reflected light on wafer W by the illumination is taken into the imaging apparatus 300, an image of the bonding surface W _J of wafer W is captured by the image capturing device 300. Image of the bonding surface W _J of wafer W captured is outputted to the control unit 350, the control unit 350, the presence or absence of adhesive residue G at the joint surface W _J of wafer W is inspected (FIG. 11 step A3).

When the residue of the adhesive G is confirmed in the inspection apparatus 7, the wafer W to be processed is transferred to the bonding surface cleaning device 40 of the post-inspection cleaning station 8 by the third transfer device 51. adhesive G on W _J is removed (step A4 in FIG. 11). Note that step A4 is the same as step A2 described above, and a description thereof will be omitted. Further, for example, when it is confirmed by the inspection device 7 that there is no residue of the adhesive G, the step A4 may be omitted.

When bonding surface W _J is cleaned wafer W is transferred to the reversing device 42 by the third transporting device 51, reverses the front and back surfaces by the reversing device 42, that is, reversed in the vertical direction (step of FIG. 11 A5). Here, a method for reversing the wafer W to be processed by the reversing device 42 will be described.

The bonding surface W _J is cleaned by the bonding surface cleaning device 40, and the wafer W to be processed has a reversing device 42 in a state where the bonding surface W _J is held by the Bernoulli chuck 230 of the third transfer device 51 as shown in FIG. To be transported. The wafer W is, the bonding surface W _J passed in a state where upward to the second holding portion 261 of the reversing device 42, the non-bonding surface W of the wafer W by the second holding portion 261 The entire surface of _N is held.

Next, the Bernoulli chuck 230 of the third transport device 51 is retracted from above the second holding unit 261, and then the second holding unit 261 is raised by the driving unit 283, in other words, as shown in FIG. The first holding unit 260 is brought closer. Then, while holding the joint surface W _J of wafer W by the first holding portion 260, stop the holding of the wafer W by the second holding portion 261, a first holding a wafer W Delivered to the unit 260. As a result, as shown in FIG. 19, the wafer W to be processed is held by the first holding unit 260 with the non-bonding surface W _N facing downward.

Thereafter, the second holding unit 261 is lowered to separate the first holding unit 260 and the second holding unit 261, and then the retracted Bernoulli chuck 230 of the third transport device 51 is rotated about the horizontal axis. Move. Then, with the Bernoulli chuck 230 facing upward, the Bernoulli chuck 230 is disposed below the first holding unit 260. Next, the Bernoulli chuck 230 is raised, and at the same time, the holding of the wafer W to be processed by the first holding unit 260 is stopped. Thereby, wafer W which has been held the joint surface W _J by Bernoulli chuck 230 when it is carried into the joint surface cleaning apparatus 40, as shown in FIG. 20, the non-bonding surface W _N by Bernoulli chuck 230 It will be held. That is, the front and back surfaces of the wafer to be processed held by the Bernoulli chuck 230 are reversed. Thereafter, the Bernoulli chuck 230 is retracted from the reversing device 42 while the non-bonding surface W _N of the wafer W to be processed is held.

  If the residue of the adhesive G is not confirmed in the inspection device 7, the wafer W to be processed is reversed by the reversing device 42 without being transferred to the bonding surface cleaning device 40. However, the inversion method is the same as that described above.

Thereafter, the Bernoulli chuck 230 of the third transfer device 51 is rotated around the horizontal axis while holding the wafer to be processed W, and the wafer to be processed W is inverted in the vertical direction. Then, wafer W is non-bonding surface W _N is transported to the inspection apparatus 7 again by the Bernoulli chuck 230 in a state facing upward, inspection of the non-bonding surface W _N is performed (step A6 in FIG. 11). When contamination of particles is confirmed on the non-bonding surface W _N , the wafer W to be processed is transferred to the non-bonding surface cleaning device 41 by the third transfer device 51, and the non-bonding surface W in the non-bonding surface cleaning device 41. _N is washed (step A7 in FIG. 11). Note that step A7 is the same as step A2 described above, and a description thereof will be omitted. For example, when it is confirmed that there is no residue of the adhesive G in the inspection device 7, the process A7 may be omitted.

  Next, the cleaned wafer W to be processed is transferred to the post-processing station 4 by the third transfer device 51. If no residue of the adhesive G is confirmed by the inspection apparatus 7, the wafer W to be processed is transferred to the post-processing station 4 without being transferred to the non-bonding surface cleaning apparatus 41.

  Thereafter, predetermined post-processing is performed on the wafer W to be processed in the post-processing station 4 (step A8 in FIG. 11). Thus, the processing target wafer W is commercialized.

On the other hand, wafer W with a peel defects from bonded wafer T including a defect, after bonding surface W _J is washed with step A2 and A3, it is conveyed to station 2 loading and unloading by the first transfer device 20 The Thereafter, the defective wafer W to be processed is unloaded from the loading / unloading station 2 and collected (step A9 in FIG. 11).

While the above-described steps A <b> 1 to A <b> 9 are performed on the wafer W to be processed, the support wafer S peeled by the peeling device 30 is transferred to the second cleaning device 33 by the first transfer device 20. Then, in the second cleaning device 33, the adhesive on the joint surface S _J of the support wafer S is removed, the bonding surfaces S _J is cleaned (step A10 in FIG. 11). The cleaning of the support wafer S in the step A10 is the same as the removal of the adhesive G on the processing target wafer W in the above-described step A2, and thus the description thereof is omitted.

Thereafter, the support wafer S which joint surface S _J is cleaned is conveyed to station 2 loading and unloading by the first transfer device 20. Thereafter, the support wafer S is unloaded from the loading / unloading station 2 and collected (step A11 in FIG. 11). In this way, a series of separation processing of the processing target wafer W and the supporting wafer S is completed.

According to the above embodiment, the wafer W to be processed held by the first holding unit 110 is adjusted to the first temperature, and the support wafer S held by the second holding unit 111 is adjusted to the first temperature. While being heated to a higher second temperature, the second holding unit 111 can be moved in the horizontal direction relative to the first holding unit 110 to separate the processing target wafer W and the supporting wafer S. . In this way, by heating the support wafer S to the second temperature by the second holding unit 111, the adhesive G on the support wafer S side can be heated to the second temperature and softened, and the wafer to be processed W and the support wafer S can be easily separated with a small load. For this reason, it can suppress that the to-be-processed wafer W receives damage, and can peel the to-be-processed wafer W and the support wafer S appropriately and uniformly. Furthermore, the time required for the peeling treatment can be shortened as compared with the conventional case. In addition, since the temperature of the wafer W to be processed held by the first holding unit 110 is adjusted to the first temperature lower than the second temperature, the adhesive G on the wafer W to be processed is heated to the first temperature. to soften been adjusted is suppressed, a state where the bonding surface W _J of wafer W is protected to the adhesive G. Therefore, it is possible to devices formed on the bonding surface W _J of wafer W can be inhibited from oxidation. The processed wafer W is adjusted to a first temperature, and since a state where the bonding surface W _J of wafer W is protected to the adhesive G, formed on the bonding surface W _J of the wafer W The damaged device can be prevented from being damaged. As described above, according to the present embodiment, it is possible to appropriately and efficiently perform the separation process between the processing target wafer W and the supporting wafer S.

  According to the peeling system 1 of the above embodiment, after the superposed wafer T is peeled off from the processing target wafer W and the support wafer S in the peeling device 30, the peeled processing target wafer W is peeled off in the first cleaning device 31. In addition to cleaning, the second cleaning device 33 can clean the peeled support wafer S. As described above, according to the present embodiment, a series of stripping processes from the stripping of the processing target wafer W and the supporting wafer S to the cleaning of the processing target wafer W and the cleaning of the supporting wafer S can be efficiently performed in one stripping system 1. Can be done well. Further, in the first cleaning device 31 and the second cleaning device 33, the cleaning of the processing target wafer W and the cleaning of the support wafer S can be performed in parallel. Furthermore, while the wafer to be processed W and the support wafer S are peeled by the peeling apparatus 30, the other wafer to be processed W and the support wafer S can be processed by the first cleaning device 31 and the second cleaning device 33. . Therefore, the wafer W to be processed and the support wafer S can be efficiently peeled, and the throughput of the peeling process can be improved.

  Further, in this series of processes, the process from the separation of the wafer to be processed W and the support wafer S to the post-processing of the wafer to be processed W can be performed, so that the throughput of the wafer processing can be further improved.

  In the above embodiment, the second holding unit 111 is moved in the vertical direction and the horizontal direction in the peeling device 30, but the first holding unit 110 may be moved in the vertical direction and the horizontal direction. Alternatively, both the first holding unit 110 and the second holding unit 111 may be moved in the vertical direction and the horizontal direction.

  In the peeling apparatus 30 described above, the second holding unit 111 is moved in the vertical direction and the horizontal direction. However, the second holding unit 111 is moved only in the horizontal direction, and the moving speed of the second holding unit 111 is increased. It may be changed. Specifically, the moving speed at the start of moving the second holding unit 111 may be reduced, and then the moving speed may be gradually accelerated. That is, when the second holding unit 111 starts to move, the bonding area between the processing target wafer W and the support wafer S is large, and the device on the processing target wafer W is easily affected by the adhesive G. The moving speed of the second holding unit 111 is lowered. Thereafter, as the bonding area between the wafer to be processed W and the support wafer S becomes smaller, the device on the wafer to be processed W becomes less susceptible to the adhesive G, so that the moving speed of the second holding unit 111 is gradually increased. To accelerate. Even in such a case, contact between the device and the support wafer S can be avoided, and damage to the device can be suppressed.

  Further, in the above embodiment, the second holding unit 111 is moved in the vertical direction and the horizontal direction in the peeling apparatus 30. For example, the distance between the device on the processing target wafer W and the support wafer S is as follows. If it is sufficiently large, the second holding part 111 may be moved only in the horizontal direction. In such a case, contact between the device and the support wafer S can be avoided, and movement of the second holding unit 111 can be easily controlled. Furthermore, the second holding unit 111 may be moved only in the vertical direction to peel off the processing target wafer W and the supporting wafer S.

In the peeling apparatus 30 of the above embodiment, a cover (not shown) that covers the processing space between the first holding unit 110 and the second holding unit 111 may be provided. In such a case, by the processing space an atmosphere of inert gas, suppress the wafer W even if heat treated, devices oxide film on the bonding surface W _J of the wafer W is formed can do.

Moreover, in the peeling apparatus 30 of the above embodiment, a porous plate (not shown) that can move in the horizontal direction following the second holding part 111 and supplies an inert gas from a plurality of holes. It may be provided. In such a case, when the second holding unit 111 is moved in order to peel the overlapped wafer T, the bonded surface of the wafer W to be processed exposed by peeling while moving the porous plate following the second holding unit 111. supplying an inert gas to W _J. Then, it is possible to prevent the wafer W even if heat treated, devices oxide film on the bonding surface W _J of wafer W is formed.

  In the peeling apparatus 30 of the above embodiment, the wafer to be processed W and the support wafer S are peeled in a state where the wafer to be processed W is disposed on the upper side and the support wafer S is disposed on the lower side. However, the vertical arrangement of the wafer W to be processed and the support wafer S may be reversed.

  In the above embodiment, when peeling the wafer to be processed W and the support wafer S, at least the first holding unit 110 or the second holding unit 111 is relatively moved in the horizontal direction. The method of moving the holding unit 110 and the second holding unit 111 is not limited to this. For example, the support wafer S held by the second holding unit 111 is peeled off continuously from the wafer W to be processed held by the first holding unit 110 from the outer periphery toward the center. You may move the outer peripheral part 111 of this holding | maintenance part to a perpendicular direction.

  In such a case, the peeling device 30 is provided with a moving mechanism 400 below the second holding portion 111 as shown in FIG. 21 instead of the moving mechanism 150 that moves the second holding portion 111 in the above embodiment. It is done. The moving mechanism 400 holds the second holding unit 111 and holds the first vertical moving unit 401 and the first vertical moving unit 401 that moves only the outer peripheral portion of the second holding unit 111 in the vertical direction. In addition, the second vertical movement unit 402 that moves the first vertical movement unit 401 and the second holding unit 111 in the vertical direction, the first vertical movement unit 401, the second vertical movement unit 402, and the second And a horizontal movement unit 403 that moves the holding unit 111 in the horizontal direction. The first vertical movement unit 401, the second vertical movement unit 402, and the horizontal movement unit 403 are arranged in this order from the top in the vertical direction.

  The first vertical movement unit 401 includes a plurality of, for example, six cylinders 410 that move the outer periphery of the second holding unit 111 in an annular shape in the vertical direction, and a support column that supports the central part of the second holding unit 111. 411, a cylinder 410, and a support plate 412 that supports the support column 411. As shown in FIG. 22, the six cylinders 410 are arranged at equal intervals on the same circumference as the support plate 412. Further, the cylinders 410 are arranged at positions corresponding to the outer peripheral portion of the second holding unit 111. The support column 411 is arranged at a center portion of the support plate 412 and at a position corresponding to the center portion of the second holding portion 111. That is, when the outer periphery of the second holding unit 111 moves vertically downward by the cylinder 410, the support column 411 is arranged so that the vertical position of the central portion of the second holding unit 111 does not change. Yes.

  As shown in FIG. 21, the second vertical movement unit 402 includes a drive unit 420 that moves the support plate 412 up and down, and a support member 421 that supports the support plate 412. The drive unit 420 includes, for example, a ball screw (not shown) and a motor (not shown) that rotates the ball screw. Further, the support member 421 is configured to be extendable in the vertical direction, and is provided, for example, at three locations between the support plate 412 and the horizontal moving unit 403.

  The horizontal movement unit 403 includes, for example, a ball screw (not shown) and a motor (not shown) that rotates the ball screw, and includes a first vertical movement unit 401, a second vertical movement unit 402, and a second vertical movement unit. The holding part 111 can be moved in the horizontal direction.

  In addition, since the other structure of the peeling apparatus 30 is the same as that of the structure of the peeling apparatus 30 of the said embodiment, description is abbreviate | omitted. However, for example, aluminum which is an elastic body is used for the second holding unit 111 and the heating mechanism 141 of the second holding unit 111 of the present embodiment.

In the peeling device 30, the superposed wafer T carried into the peeling device 30 is suction-held by the second holding unit 111. Thereafter, as shown in FIG. 23, the second holding unit 111 is raised by the second vertical moving unit 402 of the moving mechanism 400, and the overlapped wafer T is sandwiched between the first holding unit 110 and the second holding unit 111. Hold on. At this time, the non-bonding surface W _N of the wafer W is held by suction on the first holding portion 110, the non-bonding surface S _N of the support wafer S is held by suction to the second holding portion 111.

  Thereafter, the support wafer S held by the second holding unit 111 is heated to a second temperature, for example, 200 ° C. to 250 ° C. by the heating mechanism 141. This second temperature is a temperature at which the adhesive G softens. And in the adhesive G between the to-be-processed wafer W and the support wafer S, the adhesive G by the side of the support wafer S softens.

On the other hand, while the supporting wafer S held on the second holding unit 111 is heated to the second temperature, the wafer W to be processed held on the first holding unit 110 is heated to the first temperature by the temperature adjustment mechanism 124. For example, the temperature is adjusted to 23 ° C. This first temperature is lower than at least the second temperature and is a temperature at which the adhesive G does not soften. In the adhesive G between the processing target wafer W and the support wafer S, the adhesive G on the processing target wafer W side is not softened. In other words, a state where the bonding surface W _J of wafer W is protected to the adhesive G. Therefore, it is possible to devices formed on the bonding surface W _J of wafer W can be inhibited from oxidation. Further, the temperature control in the first temperature wafer W is low temperature, and since a state where the bonding surface W _J of wafer W is protected to the adhesive G, formed on the bonding surface W _J The damaged device can be prevented from being damaged. The first temperature is preferably as low as possible from the viewpoint of suppressing the oxidation and damage of the device, but the first temperature is 17 ° C. or higher in order to prevent the wafer W to be processed from condensing. Is preferred.

  Subsequently, while maintaining the softened state of the adhesive G on the support wafer S side by the heating mechanism 141, the outer peripheral portion of the second holding unit 111 is moved by the first vertical moving unit 401 of the moving mechanism 400 as shown in FIG. 24. Only move vertically downward in an annular shape. That is, when the outer peripheral portion of the second holding portion 111 moves vertically downward by the cylinder 410, the central portion of the second holding portion 111 is supported by the support pillar 411, and the central portion of the second holding portion 111 is The vertical position does not change.

In such a case, in step A1, the support wafer S held by the second holding unit 111 is continuously peeled from the processing target wafer W held by the first holding unit 110 from the outer periphery toward the center. Is done. Here, since the bonding surface W _J of wafer W are formed an electronic circuit, an attempt to peel the support wafer S and wafer W at a time, joint surface W _J, great load to S _J consuming devices on the bonding surface W _J may be damaged. In this respect, in this embodiment, since the support wafer S is continuously peeled from the processing target wafer W from the outer peripheral portion toward the central portion, a large load is not applied to the bonding surfaces W _J and S _J. Therefore, damage to the device can be suppressed.

  Thereafter, with only the center portion of the wafer W to be processed and the center portion of the support wafer S adhered, the second holding portion 111 is moved vertically downward by the second vertical moving portion 402 as shown in FIG. . Then, the support wafer S is peeled from the wafer W to be processed in a state where the outer peripheral portion of the support wafer S is bent vertically downward. Thereafter, as shown in FIG. 26, the first holding unit 111 and the outer periphery of the supporting wafer S are moved vertically upward by the first vertical moving unit 401, and the second holding unit 111 and the supporting wafer S are flattened. Is done. In this way, the wafer W to be processed held by the first holding unit 110 and the support wafer S held by the second holding unit 111 are peeled off.

Also in this embodiment, the wafer W to be processed held by the first holding unit 110 is adjusted to the first temperature, and the support wafer S held by the second holding unit 111 is higher than the first temperature. While being heated to the second temperature, the wafer W to be processed and the support wafer S can be peeled off. In this way, the adhesive G on the support wafer S side can be heated and softened to the second temperature, and the wafer to be processed W and the support wafer S can be easily separated with a small load. W and the support wafer S can be separated appropriately and uniformly. Moreover, it is suppressed to soften the adhesive G of wafer W side is thermostated at a first temperature, a state where the bonding surface W _J of wafer W is protected to the adhesive G. Therefore, it is possible to prevent the can devices formed on the bonding surface W _J of wafer W can be inhibited from oxidation, further the device is damaged.

  The peeling device 30 of the above embodiment may be provided with a wire 430 for cutting the adhesive G between the wafer W to be processed and the support wafer S as shown in FIGS. The wire 430 has a thickness of the adhesive G, for example, a diameter smaller than 1000 μm, for example, 300 μm. The wire 430 is a metal wire, such as a piano wire. The wire 430 can cut the adhesive G by inserting the adhesive G in the surface direction of the processing target wafer W and the support wafer S.

  On the outside of the first holding unit 110 and the second holding unit 111, a feeding roll 431 serving as a feeding unit for feeding the wire 430 and a winding roll serving as a winding unit for winding the wire 430 through which the adhesive G has been inserted. 432 is provided. The extending direction of the wire 430 extending between the delivery roll 431 and the take-up roll 432 is, for example, the same as the traveling direction of the second holding unit 111 (thick arrow direction in FIG. 28). Further, the delivery roll 431 and the take-up roll 432 are configured to be movable in a direction perpendicular to the traveling direction of the second holding unit 111 by a moving mechanism (not shown).

  In such a case, when the first holding unit 110 and the second holding unit 111 hold the wafer to be processed W and the support wafer S in step A1, the wire 430, the sending roll 431, and the take-up roll 432 are each processed. Waiting outside the wafer W and the support wafer S. Thereafter, the support wafer S held by the second holding unit 111 is heated to a second temperature, for example, 200 ° C. to 250 ° C. by the heating mechanism 141, and the object to be processed held by the first holding unit 110. The temperature of the wafer W is adjusted to a first temperature, for example, 23 ° C. by the temperature adjustment mechanism 124. If it does so, the adhesive agent G by the side of the support wafer S will soften, and the adhesive agent G by the side of the to-be-processed wafer W will not soften.

  Thereafter, while moving the wire 430 in one direction between the delivery roll 431 and the take-up roll 432, the delivery roll 431 and the take-up roll 432 are moved to the processed wafer W and the support wafer S side, and the wire 430 is bonded. The agent G is inserted. Then, the adhesive G is cut by the wire 430.

  Further, when the adhesive G is cut with the wire 430 as described above, the second holding unit 111 and the support wafer S are moved in the vertical direction and the horizontal direction, that is, obliquely downward by the moving mechanism 150. Then, the wafer W to be processed held by the first holding unit 110 and the support wafer S held by the second holding unit 111 are peeled off.

According to the present embodiment, when the wafer to be processed W and the support wafer S are peeled off, the adhesive G on the support wafer S side is softened and the adhesive G is cut by the wire 430, so that the second holding The part 111 can be easily moved with a smaller load. Therefore, the wafer W to be processed and the support wafer S can be more appropriately and uniformly separated, and the time required for the separation process can be further shortened. Moreover, since to soften the adhesive G of wafer W side is thermostated at the first temperature is suppressed, suppressing the devices formed on the bonding surface W _J of wafer W is oxidized In addition, the device can be prevented from being damaged.

  In the above embodiment, the wire 430 is stretched in the same direction as the traveling direction of the second holding part 111, and the adhesive G is cut by the wire 430. The method of cutting the adhesive G by the wire 430 is this. It is not limited to.

  For example, as shown in FIG. 29, the wire 430 may extend in a direction orthogonal to the traveling direction of the second holding unit 111 (the direction of the thick arrow in FIG. 29). In this case, the delivery roll 431 and the take-up roll 432 are configured to be movable in the same direction as the traveling direction of the second holding unit 111 by a moving mechanism (not shown).

  Then, in step A1, while moving the wire 430 in one direction between the delivery roll 431 and the take-up roll 432, the send roll 431 and the take-up roll 432 are moved to the processing target wafer W and the support wafer S side, The wire 430 is inserted through the adhesive G. Then, the adhesive G is cut by the wire 430. Further, when the adhesive G is cut with the wire 430 as described above, the second holding unit 111 and the support wafer S are moved in the vertical direction and the horizontal direction, that is, obliquely downward by the moving mechanism 150. Then, the wafer W to be processed held by the first holding unit 110 and the support wafer S held by the second holding unit 111 are peeled off. In the present embodiment, the adhesive G is cut by the wire 430, but a cut may be formed in the adhesive G by the wire 430.

Even in such a case, when the wafer to be processed W and the support wafer S are peeled off, the adhesive G on the support wafer S side is softened and the adhesive G is cut by the wire 430. It can be easily moved with a smaller load. Therefore, the wafer W to be processed and the support wafer S can be more appropriately and uniformly separated, and the time required for the separation process can be further shortened. Moreover, since to soften the adhesive G of wafer W side is thermostated at the first temperature is suppressed, suppressing the devices formed on the bonding surface W _J of wafer W is oxidized In addition, the device can be prevented from being damaged.

  In the peeling apparatus 30 of the above embodiment, the solvent nozzle 440 as a solvent supply part may be provided between the delivery roll 431 and the superposed wafer T as shown in FIG. The solvent nozzle 440 supplies a solvent (organic solvent) of the adhesive G to the wire 430 before the adhesive G is inserted. In such a case, since the solvent of the adhesive G is attached to the wire 430, the adhesive G can be more easily cut by the wire 430. Therefore, since the second holding part 111 can be easily moved with a smaller load, the wafer W to be processed and the support wafer S can be more appropriately and uniformly separated, and the time required for the separation process can be further reduced. You can also

In the peeling apparatus 30 of the above embodiment, the heating part 450 may be provided between the delivery roll 431 and the superposed wafer T as shown in FIG. The heating unit 450 can pass a current through the wire 430, and the wire 430 becomes a heat ray by this current. The wire 430 delivered from the delivery roll 431 is heated to a predetermined temperature by the heating unit 450. If it does so, the cutting | disconnection of the adhesive agent G by the wire 430 can be performed more easily. Therefore, since the second holding part 111 can be easily moved with a smaller load, the wafer W to be processed and the support wafer S can be more appropriately and uniformly separated, and the time required for the separation process can be further reduced. You can also Even while the wire 430 is heated in this manner, the temperature of the wafer W to be processed held by the first holding unit 110 is adjusted to the first temperature by the temperature adjusting mechanism 124. Thus, heat is no being transmitted to the wafer W from the wire 430, to prevent the device formed on the joint surface W _J of wafer W is oxidized and suppressing the device from damage be able to.

  In the above embodiment, the heating unit 450 supplies a current to the wire 430, but various heating means are used for the heating unit 450. For example, a heater may be used for the heating unit 450.

  The peeling device 30 may be provided with both the solvent nozzle 440 and the heating unit 450 described above.

  In the peeling apparatus 30 of the above embodiment, the wire 430 after the adhesive G is inserted and before being wound around the winding roll 432 may be washed.

  For example, as illustrated in FIG. 32, a solvent nozzle 460 serving as a cleaning unit that supplies a solvent of the adhesive G to the wire 430 may be provided between the superposed wafer T and the take-up roll 432. In such a case, the solvent of the adhesive G is supplied from the solvent nozzle 460 to the wire 430 after being inserted through the adhesive G and before being wound around the take-up roll 432. If it does so, the adhesive agent G adhering to the wire 430 will be removed, and the wire 430 will be wash | cleaned. Instead of the solvent nozzle 460, a solvent tank (not shown) for storing the solvent of the adhesive G and immersing the wire 430 to remove the adhesive G may be provided.

  For example, as illustrated in FIG. 33, a brush 470 as a cleaning unit that contacts the wire 430 may be provided between the overlapped wafer T and the winding roll 432. In such a case, the brush 470 comes into contact with the wire 430 after being inserted through the adhesive G and before being wound around the winding roll 432. If it does so, the adhesive agent G adhering to the wire 430 will be removed, and the wire 430 will be wash | cleaned.

  In any case where the solvent nozzle 460 or the brush 470 is provided, the wire 430 before being taken up by the take-up roll 432 can be washed, so that the wire 430 of the take-up roll 432 can be reused. Therefore, it is possible to reduce the cost for the separation process between the wafer W to be processed and the support wafer S. The peeling device 30 may be provided with both the solvent nozzle 460 and the brush 470 described above.

  In the above embodiment, the wire 430 is used when cutting the adhesive G between the processing target wafer W and the support wafer S. However, for example, laser light may be used instead of the wire 430.

  As shown in FIGS. 34 and 35, the peeling device 30 is provided with a laser beam irradiation unit 480. The laser beam irradiation unit 480 includes a lens and a mirror inside, and can irradiate the laser beam 481 collected using these. The laser beam 481 has a thickness of the adhesive G, for example, a diameter smaller than 1000 μm, for example, 300 μm. The laser beam irradiation unit 480 is configured to be movable in a direction orthogonal to the traveling direction of the second holding unit 111 by a moving mechanism (not shown). Then, the laser beam 481 irradiated from the laser beam irradiation unit 480 to the adhesive G between the processed wafer W and the support wafer S passes through the adhesive G in the surface direction of the processed wafer W and the support wafer S. The adhesive G can be cut.

  In such a case, the laser beam 481 is irradiated from the laser beam irradiation unit 480 to the adhesive G while the laser beam irradiation unit 480 is moved in the direction orthogonal to the traveling direction of the second holding unit 111 and is inserted therethrough. Then, the adhesive G is cut by the laser beam 481. Further, when the adhesive G is cut by the laser beam 481 in this way, the second holding unit 111 and the support wafer S are moved in the vertical and horizontal directions, that is, obliquely downward by the moving mechanism 150. Then, the wafer W to be processed held by the first holding unit 110 and the support wafer S held by the second holding unit 111 are peeled off.

  Also in the present embodiment, as in the case where the wire 430 is provided, when the wafer W to be processed and the support wafer S are peeled off, the adhesive G on the support wafer S side is softened and the adhesive G is applied by the laser light 481. Therefore, the second holding part 111 can be easily moved with a smaller load. Therefore, the processing target wafer W and the supporting wafer S can be more appropriately and uniformly separated, and the time required for the separation process can be further shortened.

  Next, another embodiment of the peeling apparatus 30 will be described. As shown in FIG. 36, the peeling apparatus 30 has a processing container 500 capable of sealing the inside. A loading / unloading port (not shown) for the processing target wafer W, the support wafer S, and the overlapped wafer T is formed on the side surface of the processing container 500, and an opening / closing shutter (not shown) is provided at the loading / unloading port.

  An exhaust port 501 for exhausting the atmosphere inside the processing container 500 is formed on the bottom surface of the processing container 500. An exhaust pipe 503 communicating with an exhaust device 502 such as a vacuum pump is connected to the exhaust port 501.

  Inside the processing container 500, there are provided a first holding unit 510 for sucking and holding the wafer W to be processed on the lower surface and a second holding unit 511 for mounting and holding the support wafer S on the upper surface. . The first holding unit 510 is provided above the second holding unit 511 and is disposed so as to face the second holding unit 511. That is, in the inside of the processing container 100, the peeling process is performed on the superposed wafer T in a state where the processing target wafer W is arranged on the upper side and the supporting wafer S is arranged on the lower side.

For the first holding unit 510, for example, a porous chuck is used. The first holding part 510 has a flat body part 520. A porous body 521 that is a porous body is provided on the lower surface side of the main body 520. The porous 521 has, for example, substantially the same diameter as the wafer W to be processed, and is in contact with the non-joint surface W _{N of the} wafer W to be processed. For example, silicon carbide is used as the porous 521.

A suction space 522 is formed in the main body 520 and above the porous 521. The suction space 522 is formed so as to cover the porous 521, for example. A suction tube 523 is connected to the suction space 522. The suction pipe 523 is connected to a negative pressure generator (not shown) such as a vacuum pump. Then, the non-joint surface W _{N of the} wafer to be processed is sucked from the suction pipe 523 through the suction space 522 and the porous 521, and the wafer to be processed W is sucked and held by the first holding unit 510.

  A support plate 530 that supports the first holding unit 510 is provided on the upper surface of the first holding unit 510. The support plate 530 is supported on the ceiling surface of the processing container 100. Note that the support plate 530 of this embodiment may be omitted, and the first holding unit 510 may be supported in contact with the ceiling surface of the processing container 500.

  A suction tube 540 for sucking and holding the support wafer S is provided inside the second holding unit 511. The suction pipe 540 is connected to a negative pressure generator (not shown) such as a vacuum pump.

  A movement mechanism 550 that moves the second holding unit 511 and the support wafer S in the vertical direction and the horizontal direction is provided below the second holding unit 511. The moving mechanism 550 includes a vertical moving unit 551 that moves the second holding unit 511 in the vertical direction and a horizontal moving unit 552 that moves the second holding unit 511 in the horizontal direction. The horizontal moving unit 552 is configured to be movable in the horizontal direction by a driving unit (not shown).

  The vertical movement unit 551 moves the support plate 560 up and down to support the lower surface of the second holding unit 511 and moves the first holding unit 510 and the second holding unit 511 closer to and away from each other in the vertical direction. The driving unit 561 and a support member 562 that supports the support plate 560 are provided. The drive unit 561 has, for example, a ball screw (not shown) and a motor (not shown) that rotates the ball screw. In addition, the support member 562 is configured to be extendable in the vertical direction, and is provided at, for example, three locations between the support plate 160 and the horizontal movement unit 552.

  A wire 570 for cutting the adhesive G between the processing target wafer W and the support wafer S may be provided inside the processing container 500. The wire 570 has a thickness of the adhesive G, for example, a diameter smaller than 1000 μm, for example, 300 μm. The wire 570 is a metal wire, for example, a piano wire. Then, the wire 570 can cut the adhesive G by inserting the adhesive G in the surface direction of the processing target wafer W and the support wafer S.

  On the outside of the first holding unit 510 and the second holding unit 511, a feeding roll 571 serving as a feeding unit for feeding the wire 570 and a winding unit serving as a winding unit for winding the wire 570 through which the adhesive G has been inserted. 572. As shown in FIG. 37, the delivery roll 571 and the take-up roll 572 are configured to be movable in a direction orthogonal to the extending direction of the wire 570 by a moving mechanism (not shown).

  In addition, below the 2nd holding | maintenance part 511, the raising / lowering pin (not shown) for supporting and raising / lowering the superposition | polymerization wafer T or the support wafer S from the downward direction is provided. The elevating pin is inserted through a through hole (not shown) formed in the second holding part 511 and can protrude from the upper surface of the second holding part 511.

In such a case, in the process A1, the superposed wafer T carried into the peeling device 30 is suction-held by the second holding unit 511. Thereafter, the second holding unit 511 is raised by the moving mechanism 550, and the overlapped wafer T is sandwiched and held between the first holding unit 510 and the second holding unit 511. At this time, the non-bonding surface W _N of the wafer W is held by suction on the first holding portion 510, the non-bonding surface S _N of the support wafer S is held by suction to the second holding portion 511. At this time, the wire 570, the delivery roll 571, and the take-up roll 572 are on the outside of the wafer W to be processed and the support wafer S, respectively.

  Thereafter, as shown in FIG. 38, while moving the wire 570 in one direction between the delivery roll 571 and the take-up roll 572, the delivery roll 571 and the take-up roll 572 are moved to the processing target wafer W and the support wafer S side. And the wire 570 is inserted through the adhesive G. Then, the adhesive G is cut by the wire 570.

  Thereafter, when the adhesive G is cut by the wire 570, the second holding unit 511 and the support wafer S are moved vertically downward by the moving mechanism 550 as shown in FIG. Then, the wafer W to be processed held by the first holding unit 510 and the support wafer S held by the second holding unit 511 are peeled off.

  Since the other steps A2 to A11 are the same as the steps A2 to A11 in the above embodiment, the description thereof is omitted.

According to the present embodiment, after cutting the adhesive G with the wire 570, the second holding unit 511 can be moved vertically downward, and the wafer W to be processed and the support wafer S can be peeled off. For this reason, the to-be-processed wafer W and the support wafer S can be easily peeled with an extremely small load. Therefore, it is possible to suppress the wafer to be processed W from being damaged and to separate the wafer to be processed W and the support wafer S appropriately and uniformly. Furthermore, the time required for the peeling treatment can be shortened as compared with the conventional case. Moreover, since no heating the wafer W, can be devices that are formed on the bonding surface W _J of wafer W is prevented from oxidation. It is also possible to devices formed on the bonding surface W _J of the wafer W is prevented from being damaged. As described above, according to the present embodiment, it is possible to appropriately and efficiently perform the separation process between the processing target wafer W and the supporting wafer S.

  In the above embodiment, after the adhesive G is cut by the wire 570, the second holding portion 511 is moved vertically downward. However, the second holding is performed while cutting the adhesive G by the wire 570. The part 511 may be moved vertically downward. Even in such a case, the wafer W to be processed and the support wafer S can be easily separated with a small load.

  In the above embodiment, one wire 570, one delivery roll 571, and one take-up roll 572 are provided, but a plurality of wires 570, a delivery roll 571, and a take-up roll 572 may be provided. For example, as shown in FIG. 40, two wires 570, delivery rolls 571, and take-up rolls 572 may be provided. In such a case, the adhesive G can be cut more quickly with the wire 570, and the time required for the separation process of the wafer to be processed W and the support wafer S can be further shortened.

  In the above embodiment, the adhesive G is cut by the wire 570. However, the adhesive G may be cut by the wire 570. And the 2nd holding | maintenance part 511 is moved vertically downward in the state in which the cut | interruption was formed in the adhesive agent G. FIG. Even in such a case, the wafer W to be processed and the support wafer S can be easily separated with a small load.

  The solvent nozzle 440 shown in FIG. 30 may be provided for the wire 570 of the above embodiment. In such a case, the solvent of the adhesive G is supplied from the solvent nozzle 440 to the wire 570 that has been sent from the delivery roll 571 and before the adhesive G is inserted. And since the solvent of the adhesive agent G has adhered to the wire 570, the cutting | disconnection of the adhesive agent G by the wire 430 can be performed more easily.

  Moreover, you may provide the heating part 450 shown in FIG. 31 with respect to the wire 570 of the above embodiment. As the heating unit 450, for example, a device that heats the wire 570 by passing a current through the wire 570 may be used, or a heater may be used, for example. The wire 570 delivered from the delivery roll 571 is heated to a predetermined temperature by the heating unit 450. If it does so, the cutting | disconnection of the adhesive agent G by the wire 570 can be performed more easily. In order to prevent the wafer W to be processed from being heated by the heat of the heating unit 450, a temperature adjustment mechanism (not shown) may be provided in the first holding unit 110 that holds the wafer W to be processed. As this temperature adjustment mechanism, the same one as the temperature adjustment mechanism 124 in the above embodiment may be used.

  The peeling device 30 may be provided with both the solvent nozzle 440 and the heating unit 450 described above.

  Further, the solvent nozzle 460 shown in FIG. 32 may be provided for the wire 570 of the above embodiment. In such a case, the solvent of the adhesive G is supplied from the solvent nozzle 460 to the wire 570 after the adhesive G is inserted and before being wound around the winding roll 572. If it does so, the adhesive agent G adhering to the wire 570 will be removed, and the wire 570 will be wash | cleaned.

  Further, the brush 470 shown in FIG. 33 may be provided for the wire 570 of the above embodiment. In such a case, the brush 470 comes into contact with the wire 570 after being inserted through the adhesive G and before being wound around the winding roll 572. If it does so, the adhesive agent G adhering to the wire 570 will be removed, and the wire 570 will be wash | cleaned.

  In any case, since the wire 570 before being wound around the winding roll 572 can be cleaned, the wire 570 of the winding roll 572 can be reused. Therefore, it is possible to reduce the cost for the separation process between the wafer W to be processed and the support wafer S. The peeling device 30 may be provided with both the solvent nozzle 460 and the brush 470 described above.

  Instead of the wire 570 in the above embodiment, the laser beam irradiation unit 480 shown in FIGS. 34 and 35 may be used. The laser beam 481 irradiated from the laser beam irradiation unit 480 has a thickness of the adhesive G, for example, a diameter smaller than 1000 μm, for example, 300 μm. Further, the laser beam irradiation unit 480 is configured to be movable in a direction orthogonal to the traveling direction of the second holding unit 511 by a moving mechanism (not shown). Then, the laser beam 481 irradiated from the laser beam irradiation unit 480 to the adhesive G between the processed wafer W and the support wafer S passes through the adhesive G in the surface direction of the processed wafer W and the support wafer S. The adhesive G can be cut.

  Even in such a case, similarly to the case where the wire 570 is provided, after the adhesive G is cut by the laser light 481 emitted from the laser light irradiation unit 480, the second holding unit 511 is moved vertically downward to The processing wafer W and the support wafer S can be peeled off. For this reason, the to-be-processed wafer W and the support wafer S can be easily peeled with an extremely small load. Therefore, it is possible to suppress the wafer to be processed W from being damaged and to separate the wafer to be processed W and the support wafer S appropriately and uniformly. Furthermore, the time required for the peeling treatment can be shortened as compared with the conventional case.

  In the above embodiment, the two-fluid nozzle is used as the cleaning liquid nozzle 202 of the first cleaning device 31, the second cleaning device 32, the bonding surface cleaning device 40, and the non-bonding surface cleaning device 41. The form of the nozzle 202 is not limited to this embodiment, and various nozzles can be used. For example, as the cleaning liquid nozzle 202, a nozzle body in which a nozzle for supplying an organic solvent and a nozzle for supplying an inert gas are integrated, a spray nozzle, a jet nozzle, a megasonic nozzle, or the like may be used. In order to improve the throughput of the cleaning process, for example, a cleaning liquid heated to 80 ° C. may be supplied.

Further, in the first cleaning device 31, the second cleaning device 32, the bonding surface cleaning device 40, and the non-bonding surface cleaning device 413, a nozzle for supplying IPA (isopropyl alcohol) may be provided in addition to the cleaning liquid nozzle 202. Good. In this case, after cleaning the wafer W or the support wafer S with the cleaning liquid from the cleaning liquid nozzle 202, the cleaning liquid on the wafer W or the support wafer S is replaced with IPA. Then, the bonding surfaces W _J and S _{J of the} processing target wafer W or the support wafer S are more reliably cleaned.

  Further, the configuration of the inspection apparatus 7 is not limited to the configuration of the above embodiment. The inspection apparatus 7 can take various configurations as long as it can capture an image of the wafer W to be processed and inspect the presence or absence of the adhesive G residue on the wafer W to be processed.

  The superposed wafer T of the above embodiment may be provided with a protective member for suppressing damage to the superposed wafer T, for example, a dicing frame (not shown). The dicing frame is provided on the processing target wafer W side. Even after the wafer to be processed W is peeled from the support wafer S, the thinned wafer W to be processed is subjected to predetermined processing and conveyance while being protected by the dicing frame. Therefore, damage to the processing target wafer W after peeling can be suppressed.

  In the above-described embodiment, the case where the post-processing station 4 performs post-processing on the wafer to be processed W to produce a product has been described. However, in the present invention, for example, the wafer to be processed used in the three-dimensional integration technology is peeled from the support wafer. It can also be applied to. The three-dimensional integration technology is a technology that meets the recent demand for higher integration of semiconductor devices. Instead of arranging a plurality of highly integrated semiconductor devices in a horizontal plane, This is a technique of three-dimensional lamination. Also in this three-dimensional integration technique, it is required to reduce the thickness of wafers to be processed, and the wafers to be processed are bonded to a support wafer to perform a predetermined process.

  The preferred embodiments of the present invention have been described above with reference to the accompanying drawings, but the present invention is not limited to such examples. It is obvious for those skilled in the art that various modifications or modifications can be conceived within the scope of the idea described in the claims, and these naturally belong to the technical scope of the present invention. It is understood. The present invention is not limited to this example and can take various forms. The present invention can also be applied to a case where the substrate is another substrate such as an FPD (flat panel display) other than a wafer or a mask reticle for a photomask.

DESCRIPTION OF SYMBOLS 1 Peeling system 2 Carry-in / out station 3 Processing station 20 1st conveying apparatus 30 Peeling apparatus 31 1st washing | cleaning apparatus 32 2nd conveying apparatus 110 1st holding | maintenance part 111 2nd holding | maintenance part 124 Temperature control mechanism 141 Heating mechanism DESCRIPTION OF SYMBOLS 150 Moving mechanism 151 Vertical moving part 152 Horizontal moving part 350 Control part 400 Moving mechanism 401 1st vertical moving part 402 2nd vertical moving part 403 Horizontal moving part 430 Wire 431 Sending roll 432 Winding roll 440 Solvent nozzle 450 Heating part 460 Solvent nozzle 470 Brush 480 Laser light irradiation part 481 Laser light G Adhesive S Support wafer T Superposition wafer W Processed wafer

Claims (25)

A peeling apparatus for peeling a polymerization substrate in which a substrate to be processed and a support substrate are bonded with an adhesive, to the substrate to be processed and the support substrate,
A first holding unit that includes a temperature adjustment mechanism that adjusts the substrate to be processed to a first temperature, and that holds the substrate to be processed;
A second holding unit that includes a heating mechanism that heats the support substrate to a second temperature higher than the first temperature, and that holds the support substrate;
It possesses a moving mechanism for relatively moving at least said first holding portion or the second holding portion,
The first temperature is a temperature at which the adhesive between the substrate to be processed and the support substrate does not soften,
The peeling apparatus according to claim 2, wherein the second temperature is a temperature at which the adhesive between the substrate to be processed and the support substrate is softened . The peeling apparatus according to claim 1 , wherein the moving mechanism moves at least the first holding unit or the second holding unit in a relatively horizontal direction. The moving mechanism is configured so that the support substrate held by the second holding unit continuously peels from the substrate to be processed held by the first holding unit from the outer periphery toward the center. The peeling apparatus according to claim 1 , wherein the outer peripheral portion of the second holding portion is held and moved in the vertical direction. A wire having a diameter smaller than the thickness of the adhesive between the substrate to be processed and the support substrate, and cutting the adhesive by inserting the adhesive in the surface direction of the substrate to be processed and the support substrate;
A delivery section for delivering the wire;
The peeling apparatus according to any one of claims 1 to 3 , further comprising: a winding unit that winds the wire that has been fed from the feeding unit and through which the adhesive has been inserted. The peeling apparatus according to claim 4 , further comprising a solvent supply unit that is provided between the feeding unit and the winding unit and supplies an adhesive solvent to the wire before the adhesive is inserted. . Provided between the winding unit and the sending unit, and having a heating section for heating the wire before inserting the adhesive, the peeling device according to claim 4 or 5. The peeling apparatus according to claim 6 , wherein the heating unit passes a current through the wire. The peeling apparatus according to any one of claims 4 to 7 , further comprising a cleaning unit that is provided between the feeding unit and the winding unit and that cleans the wire through which an adhesive has been inserted. The peeling device according to claim 8 , wherein the cleaning unit supplies an adhesive solvent to the wire through which the adhesive has been inserted. The peeling device according to claim 8 or 9 , wherein the cleaning unit contacts the wire through which the adhesive is inserted to remove the adhesive. A laser beam irradiation unit that irradiates a laser beam having a diameter smaller than the thickness of the adhesive between the substrate to be processed and the support substrate and that irradiates the laser in the surface direction of the substrate to be processed and the support substrate. The peeling apparatus according to any one of claims 1 to 3 , wherein the peeling apparatus is characterized. A peeling system comprising a peeling device according to any one of claims 1 to 11
A processing station comprising: the peeling device; a first cleaning device that cleans the substrate to be processed peeled by the peeling device; and a second cleaning device that cleans the support substrate peeled by the peeling device. ,
A loading / unloading station for loading / unloading a substrate to be processed, a support substrate or a superposed substrate with respect to the processing station;
A peeling system comprising: a transfer device that transfers a substrate to be processed, a support substrate, or a superposed substrate between the processing station and the carry-in / out station. A peeling method for peeling a polymerization substrate in which a substrate to be processed and a support substrate are bonded with an adhesive, to the substrate to be processed and the support substrate,
While adjusting the substrate to be processed held by the first holding unit to the first temperature and heating the support substrate held by the second holding unit to a second temperature higher than the first temperature, at least Relatively moving the first holding unit or the second holding unit, peeling the substrate to be processed and the support substrate ;
The first temperature is a temperature at which the adhesive between the substrate to be processed and the support substrate does not soften,
The peeling method according to claim 2, wherein the second temperature is a temperature at which the adhesive between the substrate to be processed and the support substrate is softened . The peeling method according to claim 13 , wherein at least the first holding part or the second holding part is moved relatively in the horizontal direction to peel off the substrate to be processed and the support substrate. The outer peripheral portion of the second holding portion is moved in the vertical direction, and the support substrate is continuously peeled from the substrate to be processed from the outer peripheral portion toward the central portion,
Then, by moving the entire second holding portion in the vertical direction, and then exfoliating the supporting substrate and the target substrate, peeling method according to claim 13. Bonding the wire in the surface direction of the substrate to be processed and the support substrate while moving the wire having a diameter smaller than the thickness of the adhesive between the substrate to be processed and the support substrate in one direction between the sending part and the winding part The peeling method according to any one of claims 13 to 15 , wherein the adhesive is cut by being inserted into an agent. The peeling method according to claim 16 , wherein an adhesive solvent is supplied to the wire after being sent out from the delivery section and before the adhesive is inserted. Characterized by heating the wire before inserting the adhesive even after fed from the delivery portion, the peeling method according to claim 16 or 17. The peeling method according to claim 18 , wherein the heating of the wire is performed by passing a current through the wire. The peeling method according to any one of claims 16 to 19 , wherein the wire is washed after being inserted through the adhesive and before being wound around the winding portion. 21. The peeling method according to claim 20 , wherein the cleaning of the wire is performed by supplying an adhesive solvent to the wire. The peeling method according to claim 20 or 21 , wherein the cleaning of the wire is performed by bringing a brush into contact with the wire. A laser beam having a diameter smaller than the thickness of the adhesive between the substrate to be processed supported substrate, characterized in that it is inserted into the adhesive in the surface direction of the substrate and the supporting substrate off the adhesive, wherein Item 16. The peeling method according to any one of Items 13 to 15 . A program that operates on a computer of a control unit that controls the peeling device in order to cause the peeling device to execute the peeling method according to any one of claims 13 to 23 . A readable computer storage medium storing the program according to claim 24 .

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