JP5830440B2 - Peeling system, peeling method, program, and computer storage medium - Google Patents

Description

  The present invention relates to a peeling system for peeling a superposed substrate from a substrate to be processed and a support substrate, a peeling method using the peeling system, a program, and a computer storage medium.

  In recent years, for example, in semiconductor device manufacturing processes, semiconductor wafers (hereinafter referred to as “wafers”) have become larger in diameter. Further, in a specific process such as mounting, it is required to make the wafer thinner. For example, when a thin wafer having a large diameter is transported or polished as it is, there is a possibility that the wafer is warped or cracked. For this reason, in order to reinforce the wafer, for example, the wafer is attached to a wafer or a glass substrate which is a support substrate. Then, after a predetermined process such as a wafer polishing process is performed in a state where the wafer and the support substrate are bonded in this way, the wafer and the support substrate are peeled off.

  When the wafer and the support substrate are peeled in this way, the peeled wafer is transferred to a predetermined processing apparatus, and predetermined processing is performed on the wafer in the processing apparatus. In the transfer and processing of the wafer, it is preferable to hold the wafer in a non-contact state in order to avoid damage to a predetermined circuit formed on the wafer.

  Therefore, in order to hold the peeled wafer, for example, a non-contact transfer device using Bernoulli's theorem is used. This non-contact conveyance device has a substantially circular base portion in plan view, and the outer peripheral portion of the base portion projects radially from the center of the base portion. A swirl flow forming body for holding the wafer is provided at the tip of each protruding portion of the base. These swirl flow forming bodies are provided, for example, at equal intervals on a circumference concentric with the base. The swirl flow forming body swirls and holds the wafer in a non-contact state by swirling and ejecting the fluid. Thus, the non-contact transfer device can hold the wafer in a non-contact state (Patent Document 1 and Patent Document 2).

JP 2007-176737 A Japanese Patent No. 2007-176638

  However, since a device having a predetermined circuit is formed on the wafer and the wafer is thinned, the outer peripheral portion of the wafer may be warped. In such a case, in the non-contact conveyance device described in Patent Document 1 and Patent Document 2, the swirling flow forming body is provided only on the outer peripheral portion of the base portion, and the suction force of these swirling flow forming bodies is not sufficient, In some cases, a wafer with a curved outer periphery cannot be held horizontally. In such a case, it is not possible to appropriately carry the wafer and perform predetermined processing on the wafer.

  This invention is made | formed in view of this point, and it aims at hold | maintaining the to-be-processed substrate peeled from the superposition | polymerization board | substrate appropriately, and performing the conveyance or the process of the said to-be-processed substrate appropriately.

In order to achieve the above object, the present invention provides a peeling system for peeling a polymerized substrate in which a substrate to be processed and a support substrate are bonded with an adhesive to the substrate to be processed and the support substrate, and the substrate is peeled from the polymerized substrate. When the substrate to be processed is transported or processed, the substrate has a holding mechanism for holding the substrate to be processed in a non-contact state. The holding mechanism has a circular main body portion and an outer periphery on the main body portion. A holding portion provided in an annular shape on the circumference concentric with the main body portion, and provided on a plurality of different circumferences concentrically with the main body portion inside the holding portion, and the circle A plurality of other holding portions provided at equal intervals on the circumference, and a pair of jet holes for ejecting gas from the center of the holding portion to the radially outer side and the inner side of the main body portion. A plurality of pairs are formed. Note that the non-contact state refers to a state where the substrate to be processed and the holding mechanism are not in contact.

  According to the present invention, the holding part is provided in an annular shape on the outer peripheral part on the main body part, and the holding part is formed with a plurality of pairs of jet nozzles for jetting gas to the outer side and the inner side in the radial direction of the main body part. . In such a case, since a plurality of pairs of jet outlets can be densely arranged in the holding portion, the suction force of the holding mechanism with respect to the substrate to be processed is larger than in the case where a plurality of holding portions themselves are provided as in the prior art. it can. That is, the rigidity (floating rigidity) sufficient to hold the substrate to be processed in a floating state horizontally can be increased. For this reason, for example, even when the outer peripheral portion of the thinned substrate to be processed is warped, the substrate can be appropriately held by correcting the warpage of the substrate to be processed by the holding mechanism. Therefore, the substrate to be processed held in the holding mechanism in this way can be appropriately transferred or processed. Note that since the holding mechanism can hold the substrate to be processed in a non-contact state, the predetermined circuit formed on the substrate to be processed can be prevented from being damaged.

  The gas ejection port in the other holding unit may be formed so that gas is ejected in the radial direction from the center of the other holding unit.

  The gas outlets in the other holding part may be formed at equal intervals on the circumference concentric with the other holding part.

  The holding unit may hold the substrate to be processed with a larger suction force than the other holding units.

  A guide member for the substrate to be processed held by the holding mechanism may be provided on the outer periphery of the holding mechanism.

  A predetermined circuit may be formed on the surface of the substrate to be processed.

  The substrate to be processed may have a thickness of 35 μm to 100 μm.

  The peeling system may include a transport device that transports the substrate to be processed that has been peeled from the superposed substrate, and the transport device may include the holding mechanism.

  The peeling system may include a reversing device that reverses the front and back surfaces of the substrate to be processed that has been peeled from the superposed substrate, and the reversing device may include the holding mechanism.

According to another aspect of the present invention, there is provided a peeling method for peeling a polymerized substrate in which a substrate to be processed and a support substrate are bonded with an adhesive to the substrate to be processed and the support substrate, and a main body having a circular shape in plan view, The outer peripheral part on the main body part, the holding part provided in a ring shape on the circumference concentric with the main body part, and on the inner side of the holding part, on a plurality of different circumferences concentrically with the main body part When the substrate to be processed peeled off from the superposed substrate is transported or processed using a holding mechanism provided with a plurality of other holding units provided at equal intervals on the circumference , the holding unit Gas is ejected from the center to the radially outer side and the inner side of the main body, and gas is ejected from the other holding part to hold the substrate to be processed in a non-contact state.

  The gas from the other holding part may be ejected in the radial direction from the center of the other holding part.

  The gas from the other holding part may be ejected from a plurality of jet outlets formed at equal intervals on the circumference concentric with the holding part.

  The holding unit may hold the substrate to be processed with a larger suction force than the other holding units.

  A predetermined circuit may be formed on the surface of the substrate to be processed.

  The substrate to be processed may have a thickness of 35 μm to 100 μm.

  In the transfer device that transfers the substrate to be processed peeled from the superposed substrate, the substrate to be processed may be held by the holding mechanism.

  In a reversing device that reverses the front and back surfaces of the substrate to be processed peeled from the superposed substrate, the substrate to be processed may be held by the holding mechanism.

  According to another aspect of the present invention, there is provided a program that operates on a computer of a control unit that controls the peeling system in order to cause the peeling system to execute the peeling method.

  According to another aspect of the present invention, a readable computer storage medium storing the program is provided.

  ADVANTAGE OF THE INVENTION According to this invention, the to-be-processed substrate peeled from the superposition | polymerization board | substrate can be hold | maintained appropriately, and the said to-be-processed substrate can be conveyed or processed appropriately.

It is a top view which shows the outline of a structure of the peeling system concerning this Embodiment. It is a side view of a to-be-processed wafer and a support wafer. It is a top view which shows the outline of a structure of a holding mechanism. It is a perspective view containing the longitudinal section which shows the outline of a structure of a 1st holding | maintenance part. It is a longitudinal cross-sectional view which shows the outline of a structure of a 1st holding | maintenance part. It is a top view which shows the outline of a structure of a 1st holding | maintenance part. It is a perspective view which shows the outline of a structure of a 2nd holding | maintenance part. It is a longitudinal cross-sectional view which shows the outline of a structure of a 2nd holding | maintenance part. It is a top view which shows the outline of a structure of a 2nd holding | maintenance part. It is a longitudinal cross-sectional view which shows the outline of a structure of a peeling apparatus. It is a longitudinal cross-sectional view which shows the outline of a structure of a 1st washing | cleaning apparatus. It is a cross-sectional view which shows the outline of a structure of a 1st washing | cleaning apparatus. It is a longitudinal cross-sectional view which shows the outline of a structure of a 2nd washing | cleaning apparatus. It is a side view which shows the outline of a structure of a 2nd conveying apparatus. It is a longitudinal cross-sectional view which shows the outline of a structure of an inversion apparatus. It is a longitudinal cross-sectional view which shows the outline of a structure of an inspection apparatus. It is a cross-sectional view which shows the outline of a structure of a test | inspection apparatus. It is a flowchart which shows the main processes of peeling processing. It is explanatory drawing which shows a mode that the superposition | polymerization wafer was hold | maintained with the upper chuck | zipper and the lower chuck | zipper in the peeling apparatus. It is explanatory drawing which shows a mode that the lower chuck | zipper of a peeling apparatus is moved to a perpendicular direction and a horizontal direction. It is explanatory drawing which shows a mode that the to-be-processed wafer and the support wafer were peeled in the peeling apparatus. It is explanatory drawing which shows a mode that a to-be-processed wafer is delivered to the holding mechanism of a 2nd conveying apparatus from the upper chuck | zipper of a peeling apparatus. It is explanatory drawing which shows a mode that a to-be-processed wafer is delivered from the holding mechanism of a 2nd conveying apparatus to the porous chuck | zipper of a 1st cleaning apparatus. It is explanatory drawing which shows a mode that a to-be-processed wafer is delivered from the holding mechanism of a 3rd conveying apparatus to the lower chuck | zipper of the inversion apparatus. It is explanatory drawing which shows a mode that a to-be-processed wafer is delivered to the upper chuck | zipper from the lower chuck | zipper of an inversion apparatus. It is explanatory drawing which shows the state by which the to-be-processed wafer was delivered from the lower chuck | zipper of the inversion apparatus to the upper chuck | zipper. It is explanatory drawing which shows the state by which the to-be-processed wafer was delivered from the upper chuck | zipper of the inversion apparatus to the holding mechanism of the 3rd conveying apparatus. It is a top view which shows the outline of a structure of the holding mechanism concerning other embodiment. It is a longitudinal cross-section which shows the outline of a structure of the holding mechanism concerning other embodiment. It is a side view which shows the outline of a structure of the holding mechanism concerning other embodiment. It is a top view which shows the outline of a structure of the holding mechanism concerning other embodiment.

  Embodiments of the present invention will be described below. FIG. 1 is a plan view showing an outline of a configuration of a peeling system 1 according to the present embodiment.

In the peeling system 1, as shown in FIG. 2, a superposed wafer T as a superposed substrate in which a target wafer W as a target substrate and a support wafer S as a support substrate are bonded with an adhesive G is used as a target wafer W. And the support wafer S is peeled off. Hereinafter, in the processing target wafer W, a surface bonded to the support wafer S via the adhesive G is referred to as “bonding surface W _J ”, and a surface opposite to the bonding surface W _J is referred to as “non-bonding surface W _N ”. That's it. Similarly, in the support wafer S, a surface bonded to the processing target wafer W via the adhesive G is referred to as “bonding surface S _J ”, and a surface opposite to the bonding surface S _J is referred to as “non-bonding surface S _N”. " Note that wafer W is a wafer as a product, for example, a plurality of devices with a predetermined circuit on the bonding surface W _J and a non-bonding surface W _N are respectively formed. In addition, for example, the non-bonding surface W _N is polished and thinned (for example, the thickness is 35 μm to 100 μm). The support wafer S is a wafer having a disk shape having the same diameter as the diameter of the wafer W to be processed and supporting the wafer W to be processed. In this embodiment, the case where a wafer is used as the support substrate will be described, but another substrate such as a glass substrate may be used.

As shown in FIG. 1, the peeling system 1 includes cassettes C _W , C _S , and C _T that can accommodate, for example, a plurality of wafers W to be processed, a plurality of support wafers S, and a plurality of superposed wafers T, respectively. A loading / unloading station 2 for loading / unloading, a peeling processing station 3 including various processing apparatuses for performing predetermined processing on the wafer W to be processed, the support wafer S, and the overlapped wafer T, and a post-processing adjacent to the peeling processing station 3 The interface station 5 that transfers the wafer W to be processed to and from the station 4 is integrally connected.

The carry-in / out station 2 and the peeling processing station 3 are arranged side by side in the X direction (vertical direction in FIG. 1). A wafer transfer region 6 is formed between the carry-in / out station 2 and the peeling processing station 3. The interface station 5 is disposed on the Y direction negative direction side (left direction side in FIG. 1) of the peeling processing station 3. An inspection apparatus 7 for inspecting the wafer W to be processed before being transferred to the post-processing station 4 is disposed on the positive side in the X direction of the interface station 5 (upward in FIG. 1). Further, the opposite side of the inspection apparatus 7 across the interface station 5, i.e. the X-direction negative side of the interface station 5 (side downward direction in FIG. 1), the bonding surface W _J and wafer W after inspection A post-inspection cleaning station 8 that performs cleaning of the non-bonded surface W _N and inversion of the front and back surfaces of the wafer W to be processed is disposed.

The loading / unloading station 2 is provided with a cassette mounting table 10. The cassette mounting table 10 is provided with a plurality of, for example, four cassette mounting plates 11. The cassette mounting plates 11 are arranged in a line in the Y direction (left and right direction in FIG. 1). These cassette mounting plates 11, cassettes _C W to the outside of the peeling system _1, C S, when loading and unloading the _{C T,} a cassette _{C W,} C S, can be placed on _{C T} . Thus, the carry-in / out station 2 is configured to be capable of holding a plurality of wafers W to be processed, a plurality of support wafers S, and a plurality of superposed wafers T. The number of cassette mounting plates 11 is not limited to the present embodiment, and can be arbitrarily determined. For example, one of the cassettes may be used for collecting defective wafers. In the present embodiment, among the plurality of cassettes C _T, using a one cassette C _T for the recovery of the fault wafer, and using the other cassette C _T for the accommodation of a normal bonded wafer T. The plurality of superposed wafers T carried into the carry-in / out station 2 are inspected in advance, and a superposed wafer T including a normal target wafer W and a superposed wafer T including a defective target wafer W are obtained. And have been determined.

  A first transfer device 20 is disposed in the wafer transfer region 6. The first transfer device 20 includes a transfer arm that can move around, for example, a vertical direction, a horizontal direction (Y direction, X direction), and a vertical axis. The first transfer device 20 moves in the wafer transfer region 6 and can transfer the wafer W to be processed, the support wafer S, and the overlapped wafer T between the carry-in / out station 2 and the separation processing station 3.

  The peeling processing station 3 includes a peeling device 30 that peels the superposed wafer T into the processing target wafer W and the supporting wafer S. A first cleaning device 31 that cleans the wafer to be processed W that has been peeled off is disposed on the negative side in the Y direction of the peeling device 30 (left side in FIG. 1). A second transfer device 32 is provided between the peeling device 30 and the first cleaning device 31. Further, a second cleaning device 33 for cleaning the peeled support wafer S is arranged on the positive side in the Y direction of the peeling device 30 (right side in FIG. 1). As described above, the first cleaning device 31, the second transport device 32, the peeling device 30, and the second cleaning device 33 are arranged in this order from the interface station 5 side in the peeling processing station 3.

In the inspection device 7, the presence or absence of a residue of the adhesive G on the processing target wafer W peeled by the peeling device 30 is inspected. In the post-inspection cleaning station 8, the wafer W to be processed in which the residue of the adhesive G is confirmed by the inspection device 7 is cleaned. The inspection after cleaning station 8, the bonding surface cleaning device 40 for cleaning the joint surface W _J of wafer W, the non-bonding surface cleaning apparatus 41 for cleaning the non-bonding surface W _N of the wafer W, the wafer W Has a reversing device 42 for vertically reversing the front and back surfaces. The bonding surface cleaning device 40, the reversing device 42, and the non-bonding surface cleaning device 41 are arranged side by side in the Y direction from the post-processing station 4 side.

  The interface station 5 is provided with a third transport device 51 that is movable on a transport path 50 extending in the Y direction. The third transport device 51 is also movable in the vertical direction and the vertical axis (θ direction), and is processed between the peeling processing station 3, the post-processing station 4, the inspection device 7, and the post-inspection cleaning station 8. The wafer W can be transferred.

  In the post-processing station 4, predetermined post-processing is performed on the processing target wafer W peeled off at the peeling processing station 3. As predetermined post-processing, for example, processing for mounting the processing target wafer W, processing for inspecting electrical characteristics of devices on the processing target wafer W, processing for dicing the processing target wafer W for each chip, and the like are performed.

  Here, the holding mechanism 60 that holds the wafer W to be processed peeled from the overlapped wafer T in the peeling system 1 described above will be described. The holding mechanism 60 is used to hold the wafer to be processed W in a non-contact state when the wafer to be processed W is transferred or a predetermined process is performed on the wafer to be processed W as described later.

  As shown in FIG. 3, the holding mechanism 60 includes a main body 61 having a circular shape in a plan view and having a diameter equal to or longer than the diameter of the wafer W to be processed. On the surface of the main body 61, that is, the holding surface that holds the processing target wafer W, holding units 62 and 63 that hold the processing target wafer W by ejecting gas, for example, air, are provided. Hereinafter, the holding unit 62 may be referred to as a “first holding unit 62”, and the holding unit 63 as another holding unit may be referred to as a “second holding unit 63”.

  The first holding portion 62 is provided in an annular shape concentrically with the main body portion 61 at the outer peripheral portion on the main body portion 61. Further, the first holding unit 62 is arranged at a position for holding the outer peripheral portion of the wafer W to be processed. The second holding part 63 is provided inside the first holding part 62 on the main body part 61 and is concentrically with the main body part 61, for example, two different circumferences at equal intervals. . Note that the arrangement and number of the second holding parts 63 are not limited to the present embodiment, and various arrangements and numbers of the second holding parts 63 can be provided. For example, the plurality of second holding parts 63 may be provided on three or more different circumferences, and the number of the second holding parts 63 provided on each circumference can be arbitrarily set. .

  A supply pipe 65 communicating with a gas supply source 64 that supplies gas is connected to each of the holding portions 62 and 63. In the example shown in the drawing, the supply pipes 65 are combined into one, but actually, the supply pipes 65 are branched in the middle and connected to the holding units 62 and 63.

  In the holding mechanism 60, the wafer W to be processed can be held on the wafer surface by the holding portions 62 and 63, so that the holding mechanism 60 generates a large suction force to hold the wafer W to be processed in a non-contact state. be able to. That is, it is possible to increase rigidity (floating rigidity) sufficient to hold the wafer W to be processed in a floating state horizontally. For this reason, for example, even when the outer peripheral portion of the thinned wafer W to be processed is warped, the warpage of the wafer W to be processed can be corrected by the holding mechanism 60 and the wafer W to be processed can be appropriately held.

  As shown in FIG. 4, the first holding portion 62 is provided in an annular shape, and is provided in the first base portion 70 having a groove-like concave portion formed in the center, and in the annular shape, and provided in the concave portion of the first base portion 70. The first gas supply unit 71 is provided. As shown in FIGS. 4 and 5, the side surface of the concave portion of the first base portion 70 is inclined upward from the first gas supply portion 71 toward the outside.

  As shown in FIGS. 4 to 6, a plurality of a pair of first outlets 72 and 72 for jetting gas to the outside and the inside of the first gas supply unit 71 are provided at the bottom of the side surface of the first gas supply unit 71. Paired. The supply pipe 65 described above is connected to each first jet port 72. The supply pipe 65 extends in the horizontal direction from the first jet outlet 72 to the center of the first gas supply part 71 at the bottom of the first gas supply part 71, and further penetrates the first base part 70 in the thickness direction. doing. And in the 1st holding | maintenance part 62, the radial direction outer side and inner side of the main-body part 61 from the center of the 1st holding | maintenance part 62 from each 1st jet nozzle 72 to the outer side and inner side of the main-body part 61 Gas is ejected to The gas ejected from each first ejection port 72 flows along the side surface of the concave portion of the first base portion 70, and further flows between the upper surface of the first base portion 70 and the wafer W to be processed. By this air flow, the atmosphere in the vicinity of the space between the first gas supply unit 71 and the processing target wafer W becomes negative pressure, and the first holding unit 62 can hold the processing target wafer W in a non-contact state. it can.

  In addition, since the gas ejected from the adjacent first ejection ports 72 in the first holding unit 62 does not interfere, the suction force of the holding mechanism 60 with respect to the processing target wafer W can be maintained at a desired value. In addition, since the first holding part 62 can be formed by arranging a plurality of pairs of the first jet nozzles 72 densely, as compared with the case where a plurality of holding parts themselves are provided as in the prior art, the wafer W to be processed Thus, the suction force of the holding mechanism 60 can be increased. That is, it is possible to increase rigidity (floating rigidity) sufficient to hold the wafer W to be processed in a floating state horizontally. For this reason, for example, even when the outer peripheral portion of the thinned wafer W to be processed is warped, the warpage of the wafer W to be processed can be corrected by the holding mechanism 60 and the wafer W to be processed can be appropriately held.

  Here, conventionally, gas is swirled in the holding portion (swirl flow forming body) that holds the wafer to be processed. In such a case, since the airflow swirls, the airflow is not uniform in plan view, and the wafer to be processed to be held may vibrate. In this respect, since the first holding unit 62 of the present embodiment can uniformly eject gas to the outside and the inside of the first gas supply unit 71, the first gas supply unit 71 and the wafer to be processed The atmosphere in the vicinity of the space with W can be appropriately set to a negative pressure, and vibration of the wafer W to be processed can be suppressed.

  As shown in FIG. 7, the second holding portion 63 has a substantially cylindrical shape, a second base portion 80 having a recess formed in the center, and a substantially cylindrical shape. The second holding portion 63 has a recess in the second base portion 80. And a second gas supply unit 81 provided. The side surface of the concave portion of the second base portion 80 is inclined upward from the second gas supply portion 81 toward the outside as shown in FIGS. 7 and 8.

  As shown in FIGS. 8 and 9, a plurality of, for example, four second ejection ports 82 for ejecting gas are formed at the bottom of the side surface of the second gas supply unit 81. The supply pipe 65 described above is connected to each second ejection port 82. The supply pipe 65 extends in the horizontal direction from the second jet outlet 82 to the center of the second gas supply part 81 at the bottom of the second gas supply part 81 and further penetrates the second base part 80 in the thickness direction. doing. The second ejection ports 82 are formed at equal intervals on the circumference concentric with the second gas supply unit 81 of the second holding unit 63. In the second holding part 63, gas is ejected from each second ejection port 82 in the radial direction of the second holding part 63, that is, in the radial direction from the center of the second holding part 63. The gas ejected from each second ejection port 82 flows along the side surface of the concave portion of the second base 80, and further flows between the upper surface of the second base 80 and the wafer W to be processed. By this air flow, the atmosphere near the space between the second gas supply unit 81 and the processing target wafer W becomes negative pressure, and the second holding unit 63 can hold the processing target wafer W in a non-contact state. it can.

  In the second holding unit 63 as well, the gas can be uniformly ejected in four directions, so that the atmosphere in the vicinity of the space between the second gas supply unit 81 and the wafer W to be processed is appropriately negatively pressured. The vibration of the wafer W to be processed can be suppressed.

  Note that the arrangement and the number of the second ejection ports 82 are not limited to the present embodiment, and various arrangements and numbers of the second ejection ports 82 can be formed. However, from the viewpoint of suppressing the vibration of the wafer W to be processed, it is preferable that the plurality of second ejection ports 82 are formed at equal intervals on the concentric circumference with the second holding portion 63.

  In the following description, the holding mechanism 60 is shown as holding mechanisms 60a to 60c depending on the devices provided, but these holding mechanisms 60a to 60c have the same configuration as the holding mechanism 60 described above.

  Next, the structure of the peeling apparatus 30 mentioned above is demonstrated. As shown in FIG. 10, the peeling device 30 includes a processing container 100 that can seal the inside. A loading / unloading port (not shown) for the processing target wafer W, the support wafer S, and the overlapped wafer T is formed on the side surface of the processing container 100, and an opening / closing shutter (not shown) is provided at the loading / unloading port.

  An exhaust port 101 for exhausting the atmosphere inside the processing container 100 is formed on the bottom surface of the processing container 100. An exhaust pipe 103 communicating with an exhaust device 102 such as a vacuum pump is connected to the exhaust port 101.

  Inside the processing container 100, an upper chuck 110 for sucking and holding the wafer W to be processed on the lower surface and a lower chuck 111 for mounting and holding the support wafer S on the upper surface are provided. The upper chuck 110 is provided above the lower chuck 111 and is disposed so as to face the lower chuck 111. That is, in the inside of the processing container 100, the peeling process is performed on the superposed wafer T in a state where the processing target wafer W is arranged on the upper side and the supporting wafer S is arranged on the lower side.

For example, a porous chuck is used as the upper chuck 110. The upper chuck 110 has a flat plate-shaped main body 120. A porous 121 that is a porous body is provided on the lower surface side of the main body 120. Porous 121 has, for example, substantially the same diameter as the processed wafer W, and contact with the non-bonding surface W _N of the treated wafer W. For example, silicon carbide is used as the porous 121.

A suction space 122 is formed inside the main body 120 and above the porous 121. The suction space 122 is formed so as to cover the porous 121, for example. A suction tube 123 is connected to the suction space 122. The suction pipe 123 is connected to a negative pressure generator (not shown) such as a vacuum pump. Then, the non-joint surface W _{N of the} wafer to be processed is sucked from the suction pipe 123 through the suction space 122 and the porous 121, and the wafer to be processed W is sucked and held by the upper chuck 110.

  A heating mechanism 124 that heats the wafer W to be processed is provided inside the main body 120 and above the suction space 122. For the heating mechanism 124, for example, a heater is used.

  A support plate 130 that supports the upper chuck 110 is provided on the upper surface of the upper chuck 110. The support plate 130 is supported on the ceiling surface of the processing container 100. Note that the support plate 130 of the present embodiment may be omitted, and the upper chuck 110 may be supported in contact with the ceiling surface of the processing container 100.

  Inside the lower chuck 111, a suction tube 140 for sucking and holding the support wafer S is provided. The suction tube 140 is connected to a negative pressure generator (not shown) such as a vacuum pump.

  A heating mechanism 141 for heating the support wafer S is provided inside the lower chuck 111. For the heating mechanism 141, for example, a heater is used.

  Below the lower chuck 111, a moving mechanism 150 that moves the lower chuck 111 and the support wafer S in the vertical direction and the horizontal direction is provided. The moving mechanism 150 includes a vertical moving unit 151 that moves the lower chuck 111 in the vertical direction and a horizontal moving unit 152 that moves the lower chuck 111 in the horizontal direction.

  The vertical moving unit 151 includes a support plate 160 that supports the lower surface of the lower chuck 111, a drive unit 161 that moves the support plate 160 up and down to move the upper chuck 110 and the lower chuck 111 in the vertical direction, and a support plate 160. And a supporting member 162 for supporting. The drive unit 161 includes, for example, a ball screw (not shown) and a motor (not shown) that rotates the ball screw. The support member 162 is configured to be extendable in the vertical direction, and is provided at, for example, three locations between the support plate 160 and a support body 171 described later.

  The horizontal moving unit 152 includes a rail 170 extending along the X direction (left and right direction in FIG. 10), a support 171 attached to the rail 170, and a drive unit 172 that moves the support 171 along the rail 170. have. The drive unit 172 includes, for example, a ball screw (not shown) and a motor (not shown) that rotates the ball screw.

  In addition, below the lower chuck | zipper 111, the raising / lowering pin (not shown) for supporting and raising / lowering the superposition | polymerization wafer T or the support wafer S from the downward direction is provided. The elevating pins are inserted into through holes (not shown) formed in the lower chuck 111 and can protrude from the upper surface of the lower chuck 111.

  Next, the configuration of the first cleaning device 31 described above will be described. As shown in FIG. 11, the first cleaning device 31 has a processing container 180 that can be sealed inside. A loading / unloading port (not shown) for the processing target wafer W is formed on the side surface of the processing container 180, and an opening / closing shutter (not shown) is provided at the loading / unloading port.

A porous chuck 190 that holds and rotates the wafer W to be processed is provided at the center of the processing container 180. The porous chuck 190 includes a plate-shaped main body 191 and a porous 192 that is a porous body provided on the upper surface side of the main body 191. The porous 192 has, for example, substantially the same diameter as the wafer to be processed W, and is in contact with the non-joint surface W _{N of the} wafer to be processed W. As the porous 192, for example, silicon carbide is used. A suction pipe (not shown) is connected to the porous 192, and the non-bonded surface W _N of the wafer to be processed W is sucked from the suction pipe through the porous 192, so that the wafer to be processed W is placed on the porous chuck 190. Can be adsorbed and retained.

  Below the porous chuck 190, for example, a chuck driving unit 193 provided with a motor or the like is provided. The porous chuck 190 can be rotated at a predetermined speed by the chuck driving unit 193. Further, the chuck driving unit 193 is provided with an elevating drive source such as a cylinder, for example, and the porous chuck 190 is movable up and down.

  Around the porous chuck 190, there is provided a cup 194 that receives and collects the liquid scattered or dropped from the wafer W to be processed. Connected to the lower surface of the cup 194 are a discharge pipe 195 for discharging the collected liquid and an exhaust pipe 196 for evacuating and exhausting the atmosphere in the cup 194.

  As shown in FIG. 12, a rail 200 extending along the Y direction (left-right direction in FIG. 12) is formed on the side of the cup 194 in the negative X direction (downward direction in FIG. 12). The rail 200 is formed, for example, from the outside of the cup 194 on the Y direction negative direction (left direction in FIG. 12) side to the outside of the Y direction positive direction (right direction in FIG. 12) side. An arm 201 is attached to the rail 200.

  As shown in FIGS. 11 and 12, the arm 201 supports a cleaning liquid nozzle 202 that supplies a cleaning liquid, for example, an organic solvent that is a solvent for the adhesive G, to the wafer W to be processed. The arm 201 is movable on the rail 200 by a nozzle driving unit 203 shown in FIG. As a result, the cleaning liquid nozzle 202 can move from the standby unit 204 installed on the outer side of the cup 194 on the positive side in the Y direction to above the center of the wafer W to be processed in the cup 194, and further on the wafer W to be processed. Can be moved in the radial direction of the wafer W to be processed. The arm 201 can be moved up and down by a nozzle driving unit 203 and the height of the cleaning liquid nozzle 202 can be adjusted.

  For example, a two-fluid nozzle is used as the cleaning liquid nozzle 202. As shown in FIG. 11, a supply pipe 210 that supplies the cleaning liquid to the cleaning liquid nozzle 202 is connected to the cleaning liquid nozzle 202. The supply pipe 210 communicates with a cleaning liquid supply source 211 that stores the cleaning liquid therein. The supply pipe 210 is provided with a supply device group 212 including a valve for controlling the flow of the cleaning liquid, a flow rate adjusting unit, and the like. The cleaning liquid nozzle 202 is connected to a supply pipe 213 that supplies an inert gas such as nitrogen gas to the cleaning liquid nozzle 202. The supply pipe 213 communicates with a gas supply source 214 that stores an inert gas therein. The supply pipe 213 is provided with a supply device group 215 including a valve for controlling the flow of the inert gas, a flow rate adjusting unit, and the like. Then, the cleaning liquid and the inert gas are mixed in the cleaning liquid nozzle 202 and supplied from the cleaning liquid nozzle 202 to the wafer W to be processed. In the following, a mixture of a cleaning liquid and an inert gas may be simply referred to as “cleaning liquid”.

  In addition, below the porous chuck 190, lifting pins (not shown) for supporting and lifting the wafer to be processed W from below may be provided. In such a case, the elevating pins can pass through a through hole (not shown) formed in the porous chuck 190 and protrude from the upper surface of the porous chuck 190. Then, instead of raising and lowering the porous chuck 190, the raising and lowering pins are raised and lowered, and the wafer W to be processed is transferred to and from the porous chuck 190.

  The configuration of the bonded surface cleaning device 40 and the non-bonded surface cleaning device 41 of the post-inspection cleaning station 8 is the same as the configuration of the first cleaning device 31 described above, and thus the description thereof is omitted.

  The configuration of the second cleaning device 33 is substantially the same as the configuration of the first cleaning device 31 described above. As shown in FIG. 13, the second cleaning device 33 is provided with a spin chuck 220 instead of the porous chuck 190 of the first cleaning device 31. The spin chuck 220 has a horizontal upper surface, and a suction port (not shown) for sucking, for example, the support wafer S is provided on the upper surface. The support wafer S can be sucked and held on the spin chuck 220 by suction from the suction port. Since the other structure of the 2nd washing | cleaning apparatus 33 is the same as that of the structure of the 1st washing | cleaning apparatus 31 mentioned above, description is abbreviate | omitted.

In the second cleaning device 33, below the spin chuck 220, it has a back rinse nozzle for injecting a cleaning liquid toward a back surface of the processing the wafer W, i.e. the non-bonding surface W _N (not shown) is provided May be. The non-bonded surface W _N of the wafer to be processed W and the outer peripheral portion of the wafer to be processed W are cleaned by the cleaning liquid sprayed from the back rinse nozzle.

Next, the configuration of the second transport device 32 described above will be described. The second transport device 32 has the holding mechanism 60a described above as shown in FIG. Holding mechanism 60a, to the bonding surface _{W J} of the processing the wafer W, for ejecting a gas from the ejection port 72, 82. The holding mechanism 60a holds the wafer W to be processed in a non-contact state.

  The holding mechanism 60 a is supported by the support arm 230. The support arm 230 is supported by a first drive unit 231 as a rotation mechanism. By this first drive unit 231, the support arm 230 is rotatable about a horizontal axis and can be expanded and contracted in the horizontal direction. A second drive unit 232 is provided below the first drive unit 231. By this second drive unit 232, the first drive unit 231 can rotate about the vertical axis and can be moved up and down in the vertical direction.

  In addition, since the 3rd conveying apparatus 51 has the structure similar to the 2nd conveying apparatus 32 mentioned above, description is abbreviate | omitted. However, the second drive unit 232 of the third transport device 51 is attached to the transport path 50 shown in FIG. 1, and the third transport device 51 is movable on the transport path 50.

  Next, the configuration of the reversing device 42 described above will be described. As shown in FIG. 15, the reversing device 42 includes a processing container 240 that houses a plurality of devices. A loading / unloading port (not shown) for loading / unloading the wafer W to be processed by the third transfer device 51 is formed on the side surface of the processing container 240, and an opening / closing shutter (not shown) is provided at the loading / unloading port (not shown). (Not shown) is provided.

  An exhaust port 250 for exhausting the atmosphere inside the processing container 240 is formed on the bottom surface of the processing container 240. An exhaust pipe 252 communicating with an exhaust device 251 such as a vacuum pump is connected to the exhaust port 250.

  Inside the processing container 240, an upper chuck 260 for holding the wafer W to be processed on the lower surface and a lower chuck 261 for mounting and holding the wafer W to be processed on the upper surface are provided. The upper chuck 260 is provided above the lower chuck 261 and is disposed so as to face the lower chuck 261.

  The upper chuck 260 has a flat main body 270. The holding mechanism 60b described above is disposed on the lower surface side of the main body 270. The holding mechanism 60 b ejects gas from the ejection ports 72 and 82 with respect to the wafer W to be processed. The holding mechanism 60b holds the wafer W to be processed in a non-contact state.

  A support plate 271 that supports the upper chuck 260 is provided on the upper surface of the upper chuck 260. The support plate 271 is supported on the ceiling surface of the processing container 240. Note that the support plate 271 of the present embodiment may be omitted, and the upper chuck 260 may be supported in contact with the ceiling surface of the processing container 240.

  The lower chuck 261 has a plate-shaped main body 280. On the upper surface side of the main body 280, the above-described holding mechanism 60c is arranged. The holding mechanism 60 c ejects gas from the ejection ports 72 and 82 with respect to the processing target wafer W. The holding mechanism 60c holds the wafer W to be processed in a non-contact state.

  A moving mechanism 281 that moves the lower chuck 261 in the vertical direction is provided below the lower chuck 261. The moving mechanism 281 includes a support plate 282 that supports the lower surface of the lower chuck 261, and a drive unit 283 that moves the support plate 282 up and down to bring the upper chuck 260 and the lower chuck 261 closer to and away from each other in the vertical direction. The driving unit 283 is supported by a support body 284 provided on the bottom surface of the processing container 240. A support member 285 that supports the support plate 282 is provided on the upper surface of the support 284. The support member 285 is configured to be extendable and contractible in the vertical direction, and can be freely expanded and contracted when the support plate 282 is moved up and down by the drive unit 283.

  Next, the configuration of the above-described inspection apparatus 7 will be described. The inspection apparatus 7 has a processing container 290 as shown in FIGS. 16 and 17. A loading / unloading port (not shown) for the processing target wafer W is formed on the side surface of the processing container 290, and an opening / closing shutter (not shown) is provided at the loading / unloading port.

In the processing container 290, a porous chuck 300 for holding the processing target wafer W is provided. The porous chuck 300 includes a flat main body 301 and a porous 302 which is a porous body provided on the upper surface side of the main body 301. Porous 302 has, for example, substantially the same diameter as the processed wafer W, and contact with the non-bonding surface W _N of the treated wafer W. As the porous 302, for example, silicon carbide is used. A suction tube (not shown) is connected to the porous 302, and the non-bonded surface W _N of the wafer to be processed W is sucked from the suction tube through the porous 302, so that the wafer to be processed W is placed on the porous chuck 300. Can be adsorbed and retained.

  A chuck driving unit 303 is provided below the porous chuck 300. The porous chuck 300 is rotatable by the chuck driving unit 303. Further, the chuck driving unit 303 is provided on the bottom surface in the processing container 290 and is attached on a rail 304 extending along the Y direction. The porous chuck 300 can be moved along the rail 304 by the chuck driving unit 303. That is, the porous chuck 300 is between the delivery position P1 for loading / unloading the processing target wafer W from / to the outside of the processing container 290 and the alignment position P2 for adjusting the position of the notch portion of the processing target wafer W. I can move.

  A sensor 305 that detects the position of the notch portion of the wafer W to be processed held by the porous chuck 300 is provided at the alignment position P2. While the position of the notch portion is detected by the sensor 305, the position of the notch portion of the wafer W to be processed can be adjusted by rotating the porous chuck 300 by the chuck driving portion 303.

  An imaging device 310 is provided on the side surface of the processing container 290 on the alignment position P2 side. For the imaging device 310, for example, a wide-angle CCD camera is used. A half mirror 311 is provided near the upper center of the processing container 290. The half mirror 311 is provided at a position facing the imaging device 310 and is inclined by 45 degrees from the vertical direction. An illumination device 312 capable of changing the illuminance is provided above the half mirror 311, and the half mirror 311 and the illumination device 312 are fixed to the upper surface of the processing container 290. Further, the imaging device 310, the half mirror 311, and the illumination device 312 are respectively provided above the processing target wafer W held by the porous chuck 300. The illumination from the illumination device 312 passes through the half mirror 311 and is illuminated downward. Therefore, the reflected light of the object in the irradiation region is reflected by the half mirror 311 and is taken into the imaging device 310. That is, the imaging device 310 can image an object in the irradiation area. Then, the captured image of the processing target wafer W is output to the control unit 350 described later, and the control unit 350 inspects whether or not the adhesive G remains on the processing target wafer W.

  The peeling system 1 is provided with a control unit 350 as shown in FIG. The control unit 350 is a computer, for example, and has a program storage unit (not shown). The program storage unit stores a program for controlling processing of the processing target wafer W, the supporting wafer S, and the overlapped wafer T in the peeling system 1. The program storage unit also stores a program for controlling the operation of drive systems such as the above-described various processing apparatuses and transport apparatuses to realize a peeling process described later in the peeling system 1. The program is recorded on a computer-readable storage medium H such as a computer-readable hard disk (HD), a flexible disk (FD), a compact disk (CD), a magnetic optical desk (MO), or a memory card. May have been installed in the control unit 350 from the storage medium H.

  Next, the peeling process method of the to-be-processed wafer W and the support wafer S performed using the peeling system 1 comprised as mentioned above is demonstrated. FIG. 18 is a flowchart showing an example of main steps of the peeling process.

First, a cassette C _T accommodating a plurality of bonded wafer _T, an empty cassette C _W, and an empty cassette C _S is placed on the predetermined cassette mounting plate 11 of the carry-out station 2. The superposed wafer _T in the cassette CT is taken out by the first transfer device 20 and transferred to the peeling device 30 of the peeling processing station 3. At this time, the superposed wafer T is transported in a state where the processing target wafer W is disposed on the upper side and the support wafer S is disposed on the lower side.

The overlapped wafer T carried into the peeling device 30 is sucked and held by the lower chuck 111. Thereafter, the lower chuck 111 is raised by the moving mechanism 150, and the overlapped wafer T is sandwiched and held by the upper chuck 110 and the lower chuck 111 as shown in FIG. At this time, the non-bonding surface W _N of the wafer W is held by suction to the upper chuck 110, the non-bonding surface S _N of the support wafer S is held by suction to the lower chuck 111.

  Thereafter, the superposed wafer T is heated to a predetermined temperature, for example, 200 ° C. by the heating mechanisms 124 and 141. As a result, the adhesive G in the superposed wafer T is softened.

  Subsequently, while the superposed wafer T is heated by the heating mechanisms 124 and 141 and the softened state of the adhesive G is maintained, the lower chuck 111 and the support wafer S are moved vertically and horizontally by the moving mechanism 150 as shown in FIG. That is, it is moved diagonally downward. Then, as shown in FIG. 21, the wafer W to be processed held by the upper chuck 110 and the support wafer S held by the lower chuck 111 are separated (step A1 in FIG. 18).

At this time, the lower chuck 111 moves 100 μm in the vertical direction and 300 mm in the horizontal direction. In the present embodiment, the thickness of the adhesive G in bonded wafer T is a 30μm~40μm example, the height of the bumps formed on the bonding surface W _J of wafer W is the 20μm e.g. . Therefore, the distance between the device (predetermined circuit) on the processing target wafer W and the support wafer S is very small. Therefore, for example, when the lower chuck 111 is moved only in the horizontal direction, the device and the support wafer S may come into contact with each other and the device may be damaged. In this regard, by moving the lower chuck 111 in the horizontal direction as well as in the vertical direction as in the present embodiment, contact between the device and the support wafer S can be avoided and damage to the device can be suppressed. . The ratio of the vertical movement distance and the horizontal movement distance of the lower chuck 111 is set based on the bump height on the wafer W to be processed.

  Thereafter, the wafer W to be processed peeled off by the peeling device 30 is transferred to the first cleaning device 31 by the second transfer device 32. Here, a transfer method of the wafer W to be processed by the second transfer device 32 will be described.

As shown in FIG. 22, the support arm 230 of the second transfer device 32 is extended, and the holding mechanism 60 a is disposed below the processing target wafer W held by the upper chuck 110. Thereafter, the holding mechanism 60a is raised, and the ejection of gas from the outlets 72 and 82 in the holding mechanism 60a of the upper chuck 110 is stopped. Then, the processing target wafer W is delivered from the upper chuck 110 to the holding mechanism 60a. Then, by the holding mechanism 60a, the bonding surface W _J of wafer W is held in a non-contact state. Therefore, wafer W is held without a predetermined circuit on the joint surface W _J of wafer W suffers damage.

  Next, as shown in FIG. 23, the support arm 230 of the second transport device 32 is rotated to move the holding mechanism 60a above the porous chuck 190 of the first cleaning device 31, and the holding mechanism 60a is reversed. Then, the processing target wafer W is directed downward. At this time, the porous chuck 190 is raised above the cup 194 and kept waiting. Thereafter, the wafer W to be processed is delivered from the holding mechanism 60a to the porous chuck 190 and held by suction.

When the wafer to be processed W is sucked and held on the porous chuck 190 in this way, the porous chuck 190 is lowered to a predetermined position. Subsequently, the arm 201 moves the cleaning liquid nozzle 202 of the standby unit 204 to above the center of the wafer W to be processed. Thereafter, while rotating the wafer W by the porous chuck 190, and supplies the cleaning liquid from the cleaning liquid nozzle 202 to the bonding surface W _J of wafer W. Supplied cleaning liquid is diffused over the entire surface of the bonding surface W _J of wafer W by the centrifugal force, the bonding surface W _J of the wafer W is cleaned (step A2 in FIG. 18).

  Here, as described above, the plurality of superposed wafers T carried into the carry-in / out station 2 have been inspected in advance, and the superposed wafer T including the normal target wafer W and the defective target wafer W are arranged. The superposed wafer T is discriminated.

The normal processing wafer W peeled from the normal superposed wafer T is inspected by the third transfer device 51 with the non-bonding surface W _N facing downward after the bonding surface W _J is cleaned in step A2. It is conveyed to the device 7. Note that the transfer of the wafer W to be processed by the third transfer device 51 is substantially the same as the transfer of the wafer W to be processed by the second transfer device 32 described above, and a description thereof will be omitted.

  The wafer W to be processed transferred to the inspection apparatus 7 is held on the porous chuck 300 at the delivery position P1. Subsequently, the porous chuck 300 is moved to the alignment position P2 by the chuck driving unit 303. Next, the porous chuck 300 is rotated by the chuck driving unit 303 while the position of the notch portion of the processing target wafer W is detected by the sensor 305. And the position of the notch part of the to-be-processed wafer W is adjusted, and the said to-be-processed wafer W is arrange | positioned in a predetermined direction.

Thereafter, the chuck chuck 303 moves the porous chuck 300 from the alignment position P2 to the delivery position P1. Then, when the wafer W to be processed passes under the half mirror 311, the illumination apparatus 312 illuminates the wafer W to be processed. The reflected light on wafer W by the illumination is taken into the imaging apparatus 310, an image of the bonding surface W _J of wafer W is captured by the image capturing device 310. Image of the bonding surface W _J of wafer W captured is outputted to the control unit 350, the control unit 350, the presence or absence of adhesive residue G at the joint surface W _J of wafer W is inspected (FIG. 18 step A3).

When the residue of the adhesive G is confirmed in the inspection device 7, the wafer W to be processed is transferred to the bonding surface cleaning device 40 of the post-inspection cleaning station 8 by the third transfer device 51, and the bonding surface is cleaned by the bonding surface cleaning device 40. W _J is cleaned (step A4 in FIG. 18). Note that step A4 is the same as step A2 described above, and a description thereof will be omitted. Further, for example, when it is confirmed by the inspection device 7 that there is no residue of the adhesive G, the step A4 may be omitted.

When bonding surface W _J is cleaned wafer W is transferred to the reversing device 42 by the third transporting device 51, reverses the front and back surfaces by the reversing device 42, that is, reversed in the vertical direction (step of FIG. 18 A5). Here, a method for reversing the wafer W to be processed by the reversing device 42 will be described.

The bonding surface W _J is cleaned by the bonding surface cleaning device 40, and the wafer W to be processed has the reversing device 42 in a state where the bonding surface W _J is held by the holding mechanism 60a of the third transfer device 51 as shown in FIG. To be transported. The wafer W is delivered in a state where the bonding surface W _J toward the upper to the lower chuck 261 of the inverter 42. Then, the non-bonding surface W _N of the processing target wafer W is held in a non-contact state by the holding mechanism 60 c of the lower chuck 261.

Next, the holding mechanism 60a of the third transport device 51 is retracted from above the lower chuck 261, and then the lower chuck 261 is raised by the drive unit 283, in other words, brought closer to the upper chuck 260 as shown in FIG. . Then, while holding the joint surface W _J of wafer W in a non-contact state by the holding mechanism 60b of the upper chuck 260, stop the holding of the wafer W by the lower chuck 261, the upper chuck the wafer W Deliver to 260. As a result, as shown in FIG. 26, the wafer W to be processed is held by the upper chuck 260 with the non-bonding surface W _N facing downward.

Thereafter, the lower chuck 261 is lowered to separate the lower chuck 261 and the upper chuck 260, and then the holding mechanism 60a of the third transfer device 51 that has been retracted is rotated about the horizontal axis. Then, with the holding mechanism 60a facing upward, the holding mechanism 60a is disposed below the upper chuck 260. Next, the holding mechanism 60a is raised, and at the same time, the holding of the processing target wafer W by the upper chuck 260 is stopped. Thereby, wafer W which has been held the joint surface W _J by the holding mechanism 60a when it is carried into the joint surface cleaning apparatus 40, as shown in FIG. 27, the non-bonding surface W _N by the holding mechanism 60a is It will be held. That is, the front and back surfaces of the wafer to be processed held by the holding mechanism 60a are reversed. Thereafter, the holding mechanism 60 a is retracted from the reversing device 42 in a state where the non-bonding surface W _N of the wafer W to be processed is held.

  If the residue of the adhesive G is not confirmed in the inspection device 7, the wafer W to be processed is reversed by the reversing device 42 without being transferred to the bonding surface cleaning device 40. However, the inversion method is the same as that described above.

Thereafter, the holding mechanism 60a of the third transfer device 51 is rotated around the horizontal axis while holding the wafer to be processed W, and the wafer to be processed W is inverted in the vertical direction. Then, wafer W is non-bonding surface W _N is transported to the inspection apparatus 7 again by the holding mechanism 60a in a state facing upward, inspection of the non-bonding surface W _N is performed (step A6 in FIG. 18). When the residue of the adhesive G is confirmed in the non-bonding surface W _N, wafer W is transferred to the non-bonding surface cleaning device 41 by the third transporting device 51, the cleaning of the non-bonding surface W _N rows (Step A7 in FIG. 18). Note that step A7 is the same as step A2 described above, and a description thereof will be omitted. For example, when it is confirmed that there is no residue of the adhesive G in the inspection device 7, the process A7 may be omitted.

  Next, the cleaned wafer W to be processed is transferred to the post-processing station 4 by the third transfer device 51. If no residue of the adhesive G is confirmed by the inspection apparatus 7, the wafer W to be processed is transferred to the post-processing station 4 without being transferred to the non-bonding surface cleaning apparatus 41.

  Thereafter, predetermined post-processing is performed on the wafer W to be processed in the post-processing station 4 (step A8 in FIG. 18). Thus, the processing target wafer W is commercialized.

On the other hand, wafer W with a peel defects from bonded wafer T including a defect, after bonding surface W _J is washed in step A2, is conveyed to the station 2 loading and unloading by the first transfer device 20. Thereafter, the wafer to be processed W having a defect is unloaded from the loading / unloading station 2 and collected (step A9 in FIG. 18).

While the above-described steps A2 to A9 are performed on the processing target wafer W, the support wafer S peeled by the peeling device 30 is transferred to the second cleaning device 33 by the first transfer device 20. Then, in the second cleaning device 33, bonding surface _{S J} of the support wafer S is cleaned (step A10 in FIG. 18). Note that the cleaning of the support wafer S in the second cleaning device 33 is the same as the cleaning of the wafer W to be processed in the first cleaning device 31 described above, and thus the description thereof is omitted.

Thereafter, the support wafer S which joint surface S _J is cleaned is conveyed to station 2 loading and unloading by the first transfer device 20. Thereafter, the support wafer S is unloaded from the loading / unloading station 2 and collected (step A11 in FIG. 18). In this way, a series of separation processing of the processing target wafer W and the supporting wafer S is completed.

  According to the above embodiment, in the holding mechanism 60, the first holding portion 62 is provided in an annular shape on the outer peripheral portion on the main body portion 61, and the first holding portion 62 has a radially outer side of the main body portion 61. A plurality of pairs of first jet nozzles 72 for jetting gas are formed inside. In such a case, the gas ejected from the first ejection ports 72 adjacent to each other in the first holding unit 62 does not interfere with each other, so that the suction force of the holding mechanism 60 with respect to the processing target wafer W can be maintained at a desired value. In addition, since a plurality of pairs of first jet nozzles 72 can be formed densely in the first holding unit 62, the wafer W to be processed is compared with a case where a plurality of holding units are provided as in the prior art. Thus, the suction force of the holding mechanism 60 can be increased. That is, it is possible to increase rigidity (floating rigidity) sufficient to hold the wafer W to be processed in a floating state horizontally. For this reason, for example, even when the outer peripheral portion of the wafer W to be processed thinned to a thickness of 35 μm to 100 μm is warped, the holding mechanism 60 corrects the warpage of the wafer W to be processed, so that the wafer W to be processed appropriately Can be held.

  In the holding mechanism 60, the wafer W to be processed can be held on the wafer surface by the holding portions 62 and 63. Therefore, the holding mechanism 60 generates a large suction force to hold the wafer W to be processed in a non-contact state. be able to. That is, it is possible to increase rigidity (floating rigidity) sufficient to hold the wafer W to be processed in a floating state horizontally. For this reason, the warp of the wafer W to be processed can be more reliably corrected by the holding mechanism 60 and the wafer W to be processed can be held more appropriately.

  Moreover, since the holding mechanism 60 can hold the wafer W to be processed in a non-contact state, it is possible to avoid damage to a predetermined circuit formed on the wafer W to be processed. Further, for example, even when particles are attached to the holding mechanism 60, the particles do not adhere to the wafer W to be processed.

  The holding mechanisms 60 a to 60 c are provided in the second transport device 32 (third transport device 51) and the reversing device 42, respectively. Therefore, in each apparatus, since the wafer W to be processed can be appropriately held in the non-contact state by the holding mechanism 60, the wafer W to be processed and various processes can be appropriately performed.

  Moreover, since the 1st gas outlet 72 of the gas in the 1st holding | maintenance part 62 can be ejected uniformly to the outer side and the inner side of the 1st gas supply part 71, the 1st gas supply part 71 and to-be-processed The atmosphere in the vicinity of the space between the wafer W can be appropriately set to a negative pressure, and the vibration of the processing target wafer W that has been generated conventionally can be suppressed. Similarly, the second gas ejection port 82 in the second holding part 63 is also formed so that gas is ejected in the radial direction from the center of the second holding part 63, and the second Since four are formed at equal intervals on the circumference concentric with the holding portion 63, gas can be uniformly ejected in four directions. For this reason, the atmosphere near the space between the second gas supply unit 81 and the wafer to be processed W can be appropriately set to a negative pressure, and the vibration of the wafer to be processed W can be suppressed.

  In the holding mechanism 60 of the above embodiment, the second holding part 63 may have the same structure as the first holding part 62 as shown in FIGS. That is, the second holding portion 63 is provided in an annular shape, and the first base portion 70 having a groove-like recess formed in the center thereof, and the first base portion 70 provided in an annular shape and provided in the recess portion of the first base portion 70. A plurality of pairs of first jet nozzles 72, 72 for jetting gas to the outside and the inside of the first gas supply unit 71 may be formed. And between the 1st holding | maintenance part 62 and the 2nd holding | maintenance part 63 and between the 2nd holding | maintenance part 63 and the 2nd holding | maintenance part 63, the ventilation hole which penetrates the main-body part 61 in the thickness direction, respectively. 400 may be formed. The vent holes 400 are formed at equal intervals in a concentric manner with the main body 61 in a plan view. In such a case, the gas injected between the first holding part 62 and the second holding part 63 and between the second holding part 63 and the second holding part 63 flows out from the vent hole 400 to the outside. To do.

  The present embodiment can also be enjoyed in this embodiment. That is, since the suction force of the holding mechanism 60 with respect to the processing target wafer W can be increased, the warping of the processing target wafer W can be corrected by the holding mechanism 60 and the processing target wafer W can be appropriately held. Moreover, since the holding mechanism 60 can hold the wafer W to be processed in a non-contact state, it is possible to avoid damage to a predetermined circuit formed on the wafer W to be processed. Further, for example, even when particles are attached to the holding mechanism 60, the particles do not adhere to the wafer W to be processed. Further, since the first gas outlets 72 in the first holding part 62 and the second holding part 63 can be uniformly jetted to the outside and the inside of the first gas supply part 71, The vibration of the wafer W to be processed can be suppressed.

  In the embodiment described above, in the holding mechanism 60, the holding units 62 and 63 suck the wafer W to be processed with a uniform suction force, but the first holding unit 62 has a larger suction than the second holding unit 63. The processing target wafer W may be held by force. As described above, for example, the outer periphery of the wafer W to be processed thinned to a thickness of 35 μm to 100 μm is easily warped. In this respect, since the suction force of the first holding unit 62 corresponding to the outer peripheral portion of the wafer W to be processed is increased, the warpage of the wafer W to be processed can be corrected more reliably. Further, since the suction force of the second holding part 63 provided inside the first holding part 62 can be smaller than the suction force of the first holding part 62, the wafer W to be processed can be efficiently held. it can.

  The guide member 410 of the wafer W to be processed held by the holding mechanism 60 as shown in FIGS. 30 and 31 may be provided on the outer periphery of the holding mechanism 60 of the above embodiment. The guide members 410 are arranged at a plurality of positions, for example, eight positions at equal intervals on the outer periphery of the holding mechanism 60. Further, the guide member 410 may be configured to be movable in the radial direction of the holding mechanism 60. When the wafer W to be processed is delivered between the holding mechanism 60 and the outside, the guide member 410 is disposed at a position away from the holding mechanism 60 (solid line in FIG. 30). Further, when the processing target wafer W is held by the holding mechanism 60, the guide member 410 is disposed at a position for guiding the processing target wafer W (dotted line in FIG. 30). In such a case, for example, even if the processing target wafer W slides on the holding mechanism 60, the guide member 410 can prevent the processing target wafer W from jumping out or sliding down. The number of guide members 410 is not limited to this embodiment, and can be set arbitrarily.

  In the above embodiment, the holding mechanism 60 is provided in each of the second transport device 32 (third transport device 51) and the reversing device 42. However, the peeling device 30 and the first cleaning device 31 (joint surface) are provided. The cleaning device 40, the non-bonding surface cleaning device 41), and the inspection device 7 may be provided respectively. In such a case, in each apparatus, since the wafer W to be processed can be appropriately held in a non-contact state by the holding mechanism 60 in each apparatus, various processes of the wafer W to be processed can be appropriately performed.

  In the above embodiment, the lower chuck 111 is moved in the vertical direction and the horizontal direction in the peeling device 30, but the upper chuck 110 may be moved in the vertical direction and the horizontal direction. Alternatively, both the upper chuck 110 and the lower chuck 111 may be moved in the vertical direction and the horizontal direction.

  In the peeling apparatus 30 described above, the lower chuck 111 is moved in the vertical direction and the horizontal direction. However, the lower chuck 111 may be moved only in the horizontal direction, and the moving speed of the lower chuck 111 may be changed. Specifically, the moving speed at the time of starting to move the lower chuck 111 may be lowered, and then the moving speed may be gradually accelerated. That is, when starting to move the lower chuck 111, the bonding area between the wafer W to be processed and the support wafer S is large, and a predetermined circuit on the wafer W to be processed is easily affected by the adhesive G. The moving speed of 111 is lowered. Thereafter, as the bonding area between the wafer to be processed W and the support wafer S becomes smaller, a predetermined circuit on the wafer to be processed W becomes less susceptible to the adhesive G, so the moving speed of the lower chuck 111 is gradually accelerated. To do. Even in such a case, contact between the predetermined circuit and the support wafer S can be avoided, and damage to the predetermined circuit can be suppressed.

  In the above embodiment, the lower chuck 111 is moved in the vertical direction and the horizontal direction in the peeling apparatus 30. However, for example, the distance between a predetermined circuit on the processing target wafer W and the support wafer S is sufficient. If it is larger, the lower chuck 111 may be moved only in the horizontal direction. In such a case, contact between the predetermined circuit and the support wafer S can be avoided, and the movement of the lower chuck 111 can be easily controlled. Further, the lower wafer 111 may be moved only in the vertical direction to peel off the processing target wafer W and the supporting wafer S.

In the peeling apparatus 30 of the above embodiment, a cover (not shown) that covers the processing space between the upper chuck 110 and the lower chuck 111 may be provided. In such a case, by the processing space an atmosphere of inert gas, the wafer W is also heat treated, oxide film to a predetermined circuit on the joint surface W _J of the wafer W is formed Can be suppressed.

In the peeling device 30 of the above embodiment, a porous plate (not shown) that can move in the horizontal direction following the lower chuck 111 and supplies an inert gas from a plurality of holes may be provided. Good. In this case, when moving the lower chuck 111 to peel the bonded wafer T, while moving the porous plate so as to follow the lower chuck 111, an inert gas to the bonding surface W _J of wafer W exposed by peeling Supply. Then, it is possible to prevent the wafer W even if heat treated, oxide film to a predetermined circuit on the joint surface W _J of wafer W is formed.

  In the peeling apparatus 30 of the above embodiment, the wafer to be processed W and the support wafer S are peeled in a state where the wafer to be processed W is disposed on the upper side and the support wafer S is disposed on the lower side. However, the vertical arrangement of the wafer W to be processed and the support wafer S may be reversed.

  In the above embodiment, the two-fluid nozzle is used as the cleaning liquid nozzle 202 of the first cleaning device 31, the second cleaning device 32, the bonding surface cleaning device 40, and the non-bonding surface cleaning device 41. The form of the nozzle 202 is not limited to this embodiment, and various nozzles can be used. For example, as the cleaning liquid nozzle 202, a nozzle body in which a nozzle for supplying an organic solvent and a nozzle for supplying an inert gas are integrated, a spray nozzle, a jet nozzle, a megasonic nozzle, or the like may be used. In order to improve the throughput of the cleaning process, for example, a cleaning liquid heated to 80 ° C. may be supplied.

Further, in the first cleaning device 31, the second cleaning device 32, the bonding surface cleaning device 40, and the non-bonding surface cleaning device 41, a nozzle for supplying IPA (isopropyl alcohol) may be provided in addition to the cleaning liquid nozzle 202. Good. In this case, after cleaning the wafer W or the support wafer S with the cleaning liquid from the cleaning liquid nozzle 202, the cleaning liquid on the wafer W or the support wafer S is replaced with IPA. Then, the bonding surfaces W _J and S _{J of the} processing target wafer W or the support wafer S are more reliably cleaned.

  Further, the configuration of the inspection apparatus 7 is not limited to the configuration of the above embodiment. The inspection apparatus 7 can take various configurations as long as it can capture an image of the wafer W to be processed and inspect the presence or absence of the residue of the adhesive G and the residue of the oxide film on the wafer W to be processed.

  In the peeling system 1 of the above embodiment, a temperature adjusting device (not shown) for cooling the processing target wafer W heated by the peeling device 30 to a predetermined temperature may be provided. In such a case, the temperature of the wafer W to be processed is adjusted to an appropriate temperature, so that subsequent processing can be performed more smoothly.

  The superposed wafer T of the above embodiment may be provided with a protective member for suppressing damage to the superposed wafer T, for example, a dicing frame (not shown). The dicing frame is provided on the processing target wafer W side. Even after the wafer to be processed W is peeled from the support wafer S, the thinned wafer W to be processed is subjected to predetermined processing and conveyance while being protected by the dicing frame. Therefore, damage to the processing target wafer W after peeling can be suppressed.

  In the above embodiment, the case where the post-processing station 4 performs post-processing on the wafer to be processed W to produce a product has been described. It can also be applied to. The three-dimensional integration technology is a technology that meets the recent demand for higher integration of semiconductor devices. Instead of arranging a plurality of highly integrated semiconductor devices in a horizontal plane, This is a technique of three-dimensional lamination. Also in this three-dimensional integration technique, it is required to reduce the thickness of wafers to be processed, and the wafers to be processed are bonded to a support wafer to perform a predetermined process.

  The preferred embodiments of the present invention have been described above with reference to the accompanying drawings, but the present invention is not limited to such examples. It is obvious for those skilled in the art that various modifications or modifications can be conceived within the scope of the idea described in the claims, and these naturally belong to the technical scope of the present invention. It is understood. The present invention is not limited to this example and can take various forms. The present invention can also be applied to a case where the substrate is another substrate such as an FPD (flat panel display) other than a wafer or a mask reticle for a photomask.

DESCRIPTION OF SYMBOLS 1 Peeling system 32 2nd conveying apparatus 42 Inversion apparatus 51 3rd conveying apparatus 60 (60a-60c) Holding mechanism 61 Main-body part 62 1st holding | maintenance part 63 2nd holding | maintenance part 70 1st base 71 1st Gas supply part 72 First jet outlet 80 Second base 81 Second gas supply part 82 Second jet outlet 350 Control part 400 Vent hole 410 Guide member G Adhesive S Support wafer T Superposition wafer W Processed wafer

Claims (19)

A peeling system for peeling a polymerized substrate in which a substrate to be processed and a support substrate are bonded with an adhesive, to the substrate to be processed and the support substrate,
A holding mechanism for holding the substrate to be processed in a non-contact state when transporting or processing the substrate to be processed peeled from the polymerization substrate;
The holding mechanism is
A main body having a circular shape in plan view;
In the outer peripheral part on the main body part, a holding part provided annularly on the concentric circumference with the main body part ,
The inside of the holding portion, provided on a plurality of different circumferences concentrically with the main body portion, and other holding portions provided at a plurality of equal intervals on the circumference ,
The peeling system according to claim 1, wherein a plurality of pairs of jetting ports for jetting gas from the center of the holding part to the radially outer side and the inner side of the main body part are formed in the holding part. The ejection port of the gas in the other holding portion, characterized in that the gas from the center of the other holding portion in the radial direction is formed so as to be ejected, peeling system according to claim 1. 3. The peeling system according to claim 2 , wherein gas outlets in the other holding part are formed at equal intervals on a concentric circumference with the other holding part. The holding portion is characterized by holding a substrate to be processed at a greater attraction than the other holding portion, peeling system according to any one of claims 1 to 3. The peeling system according to any one of claims 1 to 4 , wherein a guide member for a substrate to be processed held by the holding mechanism is provided on an outer periphery of the holding mechanism. Characterized in that the surface of the substrate is predetermined circuit is formed, peeling system according to any of claims 1-5. The peeling system according to claim 6 , wherein the substrate to be processed has a thickness of 35 μm to 100 μm. It has a transport device that transports the substrate to be processed peeled from the polymerization substrate,
It said conveying device, comprising the retention mechanism, the peeling system according to any of claims 1-7. Having a reversing device for reversing the front and back surfaces of the substrate to be processed peeled off from the polymerization substrate;
The reversing device is characterized by having the holding mechanism, peel system according to any of claims 1-8. A peeling method for peeling a polymerization substrate in which a substrate to be processed and a support substrate are bonded with an adhesive, to the substrate to be processed and the support substrate
A main body having a circular shape in plan view, a holding portion provided in an annular shape on a circumference concentric with the main body at the outer peripheral portion on the main body , the inner side of the holding portion, and the main body A substrate to be processed peeled off from a superposed substrate using a holding mechanism provided on a plurality of different concentric circumferences and provided with a plurality of other holding portions provided at equal intervals on the circumference. When transporting or processing, gas is ejected from the center of the holding part to the outer side and the inner side of the main body part in the radial direction, and gas is jetted from the other holding part to hold the substrate to be processed in a non-contact state. The peeling method characterized by performing. The peeling method according to claim 10 , wherein the gas from the other holding part is ejected in the radial direction from the center of the other holding part. The gas from said other holding | maintenance part is ejected from the jet nozzle formed in multiple equal intervals on the concentric circumference with the said holding | maintenance part, The peeling method of Claim 11 characterized by the above-mentioned. The holding portion is characterized by holding a substrate to be processed at a greater attraction than the other holding portion, peeling method according to any one of claims 10-12. The peeling method according to any one of claims 10 to 13 , wherein a predetermined circuit is formed on a surface of the substrate to be processed. The peeling method according to claim 14 , wherein the substrate to be processed has a thickness of 35 μm to 100 μm. In conveying apparatus for conveying a substrate to be processed is separated from the polymerization substrate, characterized in that for holding a substrate to be processed by the holding mechanism, peel method according to any one of claims 10-15. The peeling method according to any one of claims 10 to 16 , wherein the substrate to be processed is held by the holding mechanism in a reversing device that reverses the front and back surfaces of the substrate to be processed peeled from the superposed substrate. A program that operates on a computer of a control unit that controls the peeling system in order to cause the peeling system to execute the peeling method according to any one of claims 10 to 17 . A readable computer storage medium storing the program according to claim 18 .

Images