JP2002100595A - Device and method for releasing wafer and wafer treatment device using the same - Google Patents

Device and method for releasing wafer and wafer treatment device using the same

Info

Publication number
JP2002100595A
JP2002100595A JP2001159872A JP2001159872A JP2002100595A JP 2002100595 A JP2002100595 A JP 2002100595A JP 2001159872 A JP2001159872 A JP 2001159872A JP 2001159872 A JP2001159872 A JP 2001159872A JP 2002100595 A JP2002100595 A JP 2002100595A
Authority
JP
Japan
Prior art keywords
wafer
sub
plate
adhesive
suction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2001159872A
Other languages
Japanese (ja)
Inventor
Michihisa Sato
道久 佐藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Enya Systems Ltd
Original Assignee
Enya Systems Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Enya Systems Ltd filed Critical Enya Systems Ltd
Priority to JP2001159872A priority Critical patent/JP2002100595A/en
Publication of JP2002100595A publication Critical patent/JP2002100595A/en
Pending legal-status Critical Current

Links

Abstract

PROBLEM TO BE SOLVED: To easily release a thinned wafer from the sub-plate with which the circuit pattern face is temporarily adhered to a sub-plate by an adhesive agent and the back is polished. SOLUTION: A sub-plate (1) with wafer (3) is held on a holder (7) and the adhesive agent is heated to a temperature capable of releasing and fused. Afterwards, a vacuum chuck (11) is lowered and the wafer is adsorbed. By forward and backward turning and laterally sliding this vacuum chuck (11), the wafer (3) is released from the sub-plate (1). The sub-plate (1) is taken out of the holder. Besides, the released wafer can be continuously washed, dried and stuck to a wafer sheet as well.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、薄型化したウエ−
ハをサブプレ−トから剥離するためのウエ−ハ剥離装置
及び方法及びこれを用いたウエ−ハ処理装置に関するも
のである。
The present invention relates to a thinned wafer.
The present invention relates to a wafer separating apparatus and method for separating wafers from a sub-plate and a wafer processing apparatus using the same.

【0002】[0002]

【従来の技術】近年ウエ−ハレベルCSP(Chip Size
Package )技術を発展させることによって高速、多機能
化を図った3次元積層構造の半導体装置を作ることが提
案されているが、そのためには回路パタ−ンを形成した
ウエ−ハの裏面を研削して約50μm程度に薄型化しな
ければならない。そのような裏面研削は、ウエ−ハに形
成した回路パタ−ン(デバイス)側に保持テ−プを貼り
付けて行うことが知られているが、そのような方法では
ウエ−ハの厚さを約100μm程度にしか薄型化するこ
とができない。またウエ−ハをサブプレ−トに接着剤で
仮接着した状態で研削を行うと薄型化を図ることができ
るが、背面研削されたウエ−ハは、上述のように極めて
薄いものであるから、取り扱いが面倒であり、サブプレ
−トから簡単に剥したり、搬送することがむずかしかっ
た。剥離するための方法として、アセトンやIPA(イ
ソプロピルアルコ−ル)の液中に全体を浸漬して剥離す
る方法が知られているが、剥離時間がかかり、口径の小
さいウエ−ハに適用できるだけで大きなサイズのウエ−
ハには適用することができなかった。また、約30〜1
50μm以上のウエ−ハ厚があれば、ウエ−ハの側面か
ら機械的に押したり、手作業でカミソリを用いて剥した
り、ウエ−ハを吸着して剥がすことができるが、上記の
ように薄型化したウエ−ハでは簡単に剥すことができな
い。
2. Description of the Related Art In recent years, wafer level CSP (Chip Size) has been developed.
Package) It has been proposed to develop a semiconductor device having a three-dimensional stacked structure which achieves high speed and multi-functionality by developing technology. For this purpose, the back surface of a wafer on which a circuit pattern is formed is ground. Then, the thickness must be reduced to about 50 μm. It is known that such backside grinding is performed by attaching a holding tape to a circuit pattern (device) side formed on the wafer, but in such a method, the thickness of the wafer is reduced. Can be reduced to only about 100 μm. Also, grinding can be achieved by grinding the wafer while it is temporarily bonded to the sub-plate with an adhesive. However, since the back-ground wafer is extremely thin as described above, Handling was troublesome, and it was difficult to easily peel off the subplate or transport it. As a method for peeling, a method is known in which the whole is immersed in a solution of acetone or IPA (isopropyl alcohol) to peel the film. However, it takes a long time to peel the film and can be applied only to a wafer having a small diameter. Large size way
Ha could not be applied. In addition, about 30-1
If the wafer has a thickness of 50 μm or more, it can be mechanically pushed from the side of the wafer, manually peeled off using a razor, or peeled off by absorbing the wafer as described above. A thin wafer cannot be easily peeled off.

【0003】[0003]

【発明が解決しようとする課題】本発明の解決課題は、
上記のようにサブプレ−トに貼り付けて背面を研削した
薄いウエ−ハを、短時間に該サブプレ−トから剥離で
き、その後の洗浄等も容易にできるようにしたウエ−ハ
剥離装置及び方法及びこれを用いたウエ−ハ処理装置を
提供することである。
The problem to be solved by the present invention is as follows.
A wafer peeling apparatus and method capable of peeling a thin wafer having a back surface ground by being attached to a sub-plate as described above from the sub-plate in a short time and facilitating subsequent cleaning. And a wafer processing apparatus using the same.

【0004】[0004]

【課題を解決するための手段】本発明によれば、回路パ
タ−ン面に接着剤を塗布したウエ−ハをサブプレ−トに
貼り付け、その背面を研削して薄型化したウエ−ハを該
サブプレ−トから剥離する装置であって、該装置は、ウ
エ−ハが貼り付けられたサブプレ−トを定位置に保持す
る保持手段と、ウエ−ハとサブプレ−ト間の接着剤の接
着力を弱める接着力消失手段と、上記ウエ−ハの背面を
吸着保持する吸着手段と、該吸着手段を上記ウエ−ハに
接する位置と上記サブプレ−トから離れる位置に移動さ
せる移動手段を含むことを特徴とするウエ−ハ剥離装置
及び方法が提供され、上記課題が解決される。また、こ
のようにして剥離されたウエ−ハを洗浄乾燥してウエ−
ハシ−ト(ダイシングテ−プ)に貼り付けできるように
したウエ−ハ処理装置が提供される。
According to the present invention, a wafer having an adhesive applied to a circuit pattern surface is attached to a sub-plate, and the back surface thereof is ground to reduce the thickness of the wafer. An apparatus for separating from a sub-plate, the apparatus comprising: holding means for holding a sub-plate to which a wafer is attached in a fixed position; and bonding of an adhesive between the wafer and the sub-plate. Means for eliminating the adhesive force for weakening the force, suction means for sucking and holding the back surface of the wafer, and moving means for moving the suction means to a position in contact with the wafer and a position away from the subplate. The above object is achieved by providing a wafer peeling apparatus and method characterized by the following. The wafer thus peeled off is washed and dried, and
There is provided a wafer processing apparatus which can be attached to a sheet (dicing tape).

【0005】[0005]

【発明の実施の形態】図1は、サブプレ−ト(1)上に
接着剤(2)を介してウエ−ハ(3)を貼り付けた状態
の説明図を示し、該ウエ−ハ(3)の回路パタ−ン(デ
バイス)(4)側に塗布する接着剤としてはウエ−ハの
パタ−ン面を損傷することなく、よく馴染む適宜の天然
物系接着剤や合成樹脂系接着剤等を用いることができ、
またこれらの接着剤のうち、その性質に応じて剥離可能
な温度まで加熱することにより溶融して接着力が弱めら
れるものや、紫外線を照射することによって接着力が消
失するもの等の接着剤が好適に使用される。また、上記
サブプレ−トは、セラミック、サファイヤ、石英、シリ
コン等で約2mm程度の厚さに構成されている。
FIG. 1 is an explanatory view showing a state in which a wafer (3) is adhered on a sub-plate (1) via an adhesive (2). The adhesive to be applied to the circuit pattern (device) (4) side is a natural adhesive or a synthetic resin adhesive that can be used well without damaging the wafer pattern surface. Can be used,
Among these adhesives, there are adhesives such as those which are melted by heating to a temperature at which the adhesive can be peeled according to their properties and whose adhesive strength is weakened, and those which lose their adhesive strength when irradiated with ultraviolet rays. It is preferably used. The sub-plate is made of ceramic, sapphire, quartz, silicon or the like and has a thickness of about 2 mm.

【0006】上記のようにサブプレ−ト(1)に貼り付
けられたウエ−ハ(3)の裏面は、図示を省いた研削装
置により削られ、ウエ−ハ自体の厚さが約30〜70μ
m程度、好ましくは約50μm程度に薄型化される。そ
の後、上記ウエ−ハ付サブプレ−トは、積層化のための
フォトリソ工程、メタル蒸着工程、不要メタル除去工
程、ハンダメッキ工程、その他の適宜の処理工程を経た
後、剥離工程に搬送される。このように、上記ウエ−ハ
の裏面は、研削面やバンプ面等の場合があり、また、後
記するようにウエ−ハの背面にウエ−ハシ−トを貼り付
けてから、剥離工程に搬入してもよい。
The back surface of the wafer (3) attached to the sub-plate (1) as described above is ground by a grinding device (not shown), and the thickness of the wafer itself is about 30 to 70 μm.
m, preferably about 50 μm. After that, the wafer-attached sub-plate undergoes a photolithography process for lamination, a metal deposition process, an unnecessary metal removal process, a solder plating process, and other appropriate processing processes, and is then conveyed to a peeling process. As described above, the back surface of the wafer may be a ground surface, a bump surface, or the like. Also, as described later, a wafer sheet is attached to the back surface of the wafer, and then the wafer is carried into a peeling step. May be.

【0007】剥離装置(5)は、図2に示すように、ウ
エ−ハ(3)が貼り付けられたサブプレ−ト(1)を定
位置に保持する保持手段と、ウエ−ハとサブプレ−ト間
の接着剤の接着力を弱める接着力消失手段と、上記ウエ
−ハの背面を吸着保持する吸着手段と、該吸着手段を上
記ウエ−ハに接する位置と上記サブプレ−トから離れる
位置に移動させる移動手段を含んでいる。
As shown in FIG. 2, the peeling device (5) comprises holding means for holding the sub-plate (1) to which the wafer (3) is attached in a fixed position, a wafer and a sub-plate. Means for reducing the adhesive force of the adhesive between the substrates, suction means for sucking and holding the rear surface of the wafer, and the suction means at a position in contact with the wafer and at a position away from the subplate. It includes moving means for moving.

【0008】図において、上記保持手段は、上記サブプ
レ−ト(1)が嵌着する凹部(6)を有するアルミニウ
ムその他の熱伝導性の良い金属材料で作られた保持体
(7)で構成され、該保持体(7)に設けた吸引孔
(8)…を真空吸引源(図示略)に連絡することによっ
て、上記凹部(6)に載置したサブプレ−ト(1)を吸
着保持する。なお、該凹部(6)は上記サブプレ−ト
(1)の外形に対応して形成されるが、該凹部をサブプ
レ−トよりも大きく形成しておき、該凹部の周壁に沿っ
て嵌合する調整リング(図示略)を形成し、該調整リン
グを適宜上記凹部に嵌着させることにより外形の異なる
複数のサブプレ−トに対応させることもでき、また、周
囲の適宜部位には搬送部の爪が入る挿入部(図示略)が
有る。
In the drawing, the holding means is constituted by a holding body (7) made of aluminum or another metal material having good heat conductivity having a concave portion (6) in which the subplate (1) is fitted. By connecting the suction holes (8) provided in the holder (7) to a vacuum suction source (not shown), the sub-plate (1) placed in the recess (6) is suction-held. The concave portion (6) is formed corresponding to the outer shape of the subplate (1). The concave portion is formed larger than the subplate, and is fitted along the peripheral wall of the concave portion. An adjusting ring (not shown) is formed, and the adjusting ring is appropriately fitted into the concave portion so as to correspond to a plurality of sub-plates having different outer shapes. There is an insertion portion (not shown) into which the light-emitting device enters.

【0009】上記接着力消失手段は、上記ウエ−ハをサ
ブプレ−トに仮接着するのに用いた接着剤と関連して適
宜に構成することができる。図においては、接着剤とし
て天然物系接着剤を用いており、この接着剤は剥離温度
まで昇温することにより溶融し、接着力が弱められ、剥
離可能となるので、接着力消失手段として、ヒ−タ−
(9)を埋設した加温プレ−ト(10)を用いている。な
お、このヒ−タ−による温度は、温度センサ−や設定時
間により管理され、上記ウエ−ハ(3)の回路パタ−ン
(デバイス)を破壊しない温度以下で加温しなければな
らず、例えば250℃以下、好ましくは約145℃程度
にしてある。なお、接着剤の性質に応じて接着力消失手
段として接着剤を冷却する冷却装置を用いたり、接着力
を弱める紫外線照射装置を用いることができる。
The above-mentioned adhesive force eliminating means can be appropriately constituted in association with the adhesive used for temporarily adhering the above-mentioned wafer to the subplate. In the figure, a natural adhesive is used as the adhesive, and the adhesive is melted by raising the temperature to the peeling temperature, the adhesive strength is weakened, and the peelable adhesive is used. Heater
The heating plate (10) embedded with (9) is used. The temperature of the heater is controlled by a temperature sensor and a set time, and the heater (3) must be heated to a temperature below the circuit pattern (device). For example, the temperature is set to 250 ° C. or less, preferably about 145 ° C. In addition, a cooling device that cools the adhesive or an ultraviolet irradiation device that weakens the adhesive force can be used as the adhesive force eliminating means depending on the properties of the adhesive.

【0010】上記ウエ−ハの背面を吸着保持する吸着手
段としては、真空チャック(11)が用いられている。真空
チャックはウエ−ハに対応する大きさに形成され、それ
によりそれぞれの大きさのウエ−ハを吸着保持すること
ができる。この場合、チャックのウエ−ハ吸着面の外径
を、ウエ−ハの外径よりも少し小さく、例えば約2〜2
0mm程度、好ましくは約4〜10mm程度小さく形成する
とよい。このようにすれば、後記するようにウエ−ハを
吸着保持して横方向にスライドさせる際、溶融した接着
剤がウエ−ハの周縁に押されてウエーハ上面にもり上る
ようなことがあっても、ウエ−ハとウエ−ハ吸着面間に
入り込まないようにすることができる。
A vacuum chuck (11) is used as suction means for sucking and holding the back surface of the wafer. The vacuum chuck is formed in a size corresponding to the wafer, so that a wafer of each size can be held by suction. In this case, the outer diameter of the wafer suction surface of the chuck is slightly smaller than the outer diameter of the wafer, for example, about 2 to 2 mm.
It may be formed to be smaller by about 0 mm, preferably about 4 to 10 mm. In this way, when the wafer is sucked and held and is slid in the horizontal direction as described later, the molten adhesive may be pushed by the peripheral edge of the wafer and may rise to the upper surface of the wafer. Can also be prevented from entering between the wafer and the wafer suction surface.

【0011】1つの真空チャックで大きさの異なる複数
のウエ−ハを選択可能に吸着できるようにするには、図
3に示すようにすればよい。すなわち、チャック本体(1
2)に複数の外径のウエ−ハに対応するよう個別流路 (13
a)…,(13b)…を形成し、これらの各流路を電磁バルブ
(図示略)を介して真空吸引源若しくは圧縮空気供給源
に接続する。そして、上記各個別流路(13a),(13b) 毎
に、例えば3インチウエ−ハ(3a)に対応する吸引孔(14
a) …、4インチウエ−ハ(3b)に対応するよ吸引孔(14b)
…を開口させてある。この構成により、3インチウエ
−ハ(3a)を吸着する際は、上記個別流路(13a) を介して
真空吸引作用を吸着面(15)に生じさせ、4インチウエ−
ハ(3b)の場合は上記個別流路(13b) を介して吸着面(15)
に真空吸引作用を生じさせるようにすればよい。
In order to be able to selectively suction a plurality of wafers having different sizes with one vacuum chuck, the arrangement shown in FIG. 3 may be used. That is, the chuck body (1
In (2), individual flow paths (13
a) ..., (13b) ... are formed, and these flow paths are connected to a vacuum suction source or a compressed air supply source via an electromagnetic valve (not shown). Then, for each of the individual flow paths (13a) and (13b), for example, a suction hole (14) corresponding to a 3-inch wafer (3a) is provided.
a) Suction hole (14b) corresponding to 4-inch wafer (3b)
... is opened. With this configuration, when suctioning a 3-inch wafer (3a), a vacuum suction action is generated on the suction surface (15) through the individual flow path (13a) to cause the 4-inch wafer (3a) to suction.
In the case of C (3b), the suction surface (15) is passed through the individual flow path (13b).
In this case, a vacuum suction effect may be generated.

【0012】上記吸着手段のウエ−ハ吸着面には、合成
ゴム、有弾性合成樹脂材料、多孔質ゴム材料等の耐熱性
弾性材料により緩衝作用を奏する緩衝部材(16)が設けら
れている。該緩衝部材(16)には、上記吸引孔(14a),(14
b) が開口しており、上記ウエ−ハ(3)は該緩衝部材
(16)の表面の吸着面に接して吸着保持され、後記するよ
うに移送され、アンロ−ダコンベア部等において上記吸
引孔から空気を噴出することにより該緩衝部材の表面の
吸着面から離れる。この際、上記のように薄型化したウ
エ−ハを損傷することなく容易に離すことができるよう
該緩衝部材の表面は、上記ウエ−ハが接着しないよう非
接着面とすることが好ましい。そのような非接着表面と
しては、例えば表面に微細な凹凸形状を設けたり、非接
着処理を施したり、非接着性の材料で緩衝部材を構成し
たりすればよい。また、上記吸着面の表面全体を覆うよ
うに通気性が良く、ウエ−ハに非接着のガ−ゼ等の布体
(16a)を設けておくと、真空チャックの吸引孔から空気
を噴出した際に確実にウエ−ハを離脱させることができ
る。
The wafer suction surface of the suction means is provided with a buffer member (16) having a buffer action by a heat-resistant elastic material such as synthetic rubber, elastic synthetic resin material and porous rubber material. In the buffer member (16), the suction holes (14a), (14
b) is open and the wafer (3) is
The suction member is sucked and held in contact with the suction surface of the surface of (16), is transferred as described later, and is separated from the suction surface of the surface of the buffer member by ejecting air from the suction hole in an unloader conveyor section or the like. At this time, it is preferable that the surface of the buffer member be a non-adhesive surface so that the wafer can be easily separated from the thinned wafer as described above without damaging the wafer. As such a non-adhesive surface, for example, a fine uneven shape may be provided on the surface, a non-adhesive treatment may be performed, or the buffer member may be formed of a non-adhesive material. If a cloth (16a) such as a non-adhesive gauze is provided on the wafer with good air permeability so as to cover the entire surface of the suction surface, air is blown out from the suction hole of the vacuum chuck. In this case, the wafer can be reliably removed.

【0013】上記吸着手段を移動させる移動手段(17)
は、上記ウエ−ハに接する位置と上記サブプレ−トから
離れる位置に該吸着手段を移動させることができる機能
を有すればよいから、具体的には流体圧シリンダ、モ−
タ−シリンダ、 モ−タ−等を適宜組み合せて駆動源と
し、上記真空チャック(11)を、好ましくは移動速度を調
整できるようにして降下、上昇、水平移動等させるよう
適宜に構成してある。
Moving means (17) for moving the suction means
Since it is only necessary to have a function capable of moving the suction means to a position in contact with the wafer and a position away from the subplate, specifically, a fluid pressure cylinder, a motor,
The vacuum chuck (11) is suitably configured to be lowered, raised, moved horizontally, etc., preferably in such a manner as to be able to adjust the moving speed, by appropriately combining a cylinder, a motor and the like as a drive source. .

【0014】ウエ−ハを移動させる際、接着剤が加熱溶
融されているので、上記ウエ−ハを上記サブプレ−トに
対して垂直方向にそのまま引き上げると、面状に広がる
上記溶融状態の接着剤層によってウエ−ハが剥離しにく
いことがある。そこで、本発明においては、上記移動手
段は、真空チャックが上記ウエ−ハを吸着保持した後、
上記サブプレ−トに沿ってウエ−ハを横方向に移動させ
るようにしてある。さらに好ましくは、ウエ−ハをチャ
ック吸着保持した段階で、該真空チャックを時計方向、
反時計方向に数度の回転角で交互に正転、反転させ接着
剤を線状に寄せ集めて接着力を弱めた後、横方向にスラ
イドすることによりウエ−ハを剥離するようにしてい
る。したがって、そのような接着剤を使用する場合には
上記移動手段は、真空チャックを回動させる機能も有す
る。
When the wafer is moved, the adhesive is heated and melted. Therefore, if the wafer is directly lifted in the vertical direction with respect to the subplate, the adhesive in the molten state spreads in a plane. Depending on the layer, the wafer may not be easily peeled off. Therefore, in the present invention, after the vacuum chuck sucks and holds the wafer,
The wafer is moved in the lateral direction along the subplate. More preferably, when the wafer is chucked and held, the vacuum chuck is rotated clockwise.
The wafer is peeled by sliding in the horizontal direction after the adhesive is weakened by linearly rotating and reversing the adhesive in a counterclockwise direction at a rotation angle of several degrees to gather the adhesive in a line and weaken the adhesive force. . Therefore, when such an adhesive is used, the moving means also has a function of rotating the vacuum chuck.

【0015】上記剥離装置の剥離部の作用及び剥離方法
を図4を参照して説明すると、裏面を研削して薄型化さ
れたウエ−ハ(3)は、サブプレ−ト(1)に天然物系
接着剤で仮接着された状態で図4(A)に示すように、
適宜のロボットや搬送ア−ムにより保持体(7)の凹部
(6)に運ばれる。この際、後工程で移動手段によりウ
エ−ハをスライドさせるとき、移動方向に対してウエー
ハの強度が弱くならない方向にウエ−ハ方向を定めて搬
入する。その後、上記加熱プレ−ト(10)からの加温によ
り接着剤が剥離温度まで加熱され溶融されると、上面か
ら真空チャック(11)が降下してくる。
The operation of the peeling section of the peeling apparatus and the peeling method will be described with reference to FIG. 4. The wafer (3) whose back surface has been ground and reduced in thickness has a sub-plate (1) made of a natural material. As shown in FIG. 4A in a state of being temporarily bonded with a system adhesive,
It is carried to the concave portion (6) of the holder (7) by an appropriate robot or transport arm. At this time, when the wafer is slid by the moving means in a later step, the wafer is set in a direction in which the strength of the wafer does not become weaker with respect to the moving direction, and the wafer is loaded. Thereafter, when the adhesive is heated to the peeling temperature and melted by heating from the heating plate (10), the vacuum chuck (11) descends from the upper surface.

【0016】上記真空チャック(11)がウエ−ハ(3)を
吸着保持すると、該真空チャック(11)は正転、反転方向
に数度回動して接着剤を略線状に集めた後、横方向にス
ライドし、サブプレ−トからウエ−ハを剥離させてアン
ロ−ダ部(図示略)へ搬出する(図4(B))。その
際、真空チャック(11)を回転、スライド後に上昇させて
ウエ−ハのアンロ−ダ部へウエ−ハを運び出すようにし
てもよい(図4(C))。その後、サブプレ−ト(1)
を、適宜のロボットや搬送ア−ム等の搬送手段によりサ
ブプレ−トのアンロ−ダ部へ取り出す(図4(D))。
When the vacuum chuck (11) sucks and holds the wafer (3), the vacuum chuck (11) rotates several degrees in the forward and reverse directions to collect the adhesive in a substantially linear shape. Then, the wafer is slid in the lateral direction to separate the wafer from the sub-plate, and is carried out to an unloader (not shown) (FIG. 4B). At this time, the wafer may be lifted after rotating and sliding the vacuum chuck (11) to carry the wafer to the unloader portion of the wafer (FIG. 4C). After that, sub-plate (1)
Is taken out to the unloader section of the sub-plate by a suitable robot or a transfer means such as a transfer arm (FIG. 4D).

【0017】上記ウエ−ハは、アンロ−ダ部へ移送され
た後、上記チャックの吸引孔に空気を供給することによ
り吸着面から離れて落下する。この際、チャックのウエ
−ハ吸着面と該ウエ−ハの間に溶融した接着剤が入り込
んでいるとウエーハの一部が接着して簡単に落下しない
おそれもあるが、上記のようにウエ−ハの外径に対して
ウエ−ハ吸着面の外径を小さく形成しておくと、溶融し
た接着剤がウエ−ハと吸着面間に入り込まず、そのよう
なおそれがない。また、上記のようにウエ−ハ吸着面に
通気性のある非接着性の布体(16a)を設けておくと、吸
引孔から空気を供給した際、一層確実にウエ−ハを落下
させることができる。
After the wafer is transferred to the unloader, the wafer is separated from the suction surface by supplying air to the suction hole of the chuck. At this time, if a molten adhesive enters between the wafer suction surface of the chuck and the wafer, a part of the wafer may adhere and may not easily drop. If the outer diameter of the wafer suction surface is formed smaller than the outer diameter of the wafer, the molten adhesive does not enter between the wafer and the suction surface, and there is no such a possibility. In addition, if the air-absorbing non-adhesive cloth body (16a) is provided on the wafer suction surface as described above, the wafer can be dropped more reliably when air is supplied from the suction hole. Can be.

【0018】上記接着剤として紫外線照射により接着力
が消失し若しくは弱められるような合成樹脂系接着剤を
用いた場合には、上記真空チャック(11)は、ウエ−ハを
吸着した後に上昇してアンロ−ダ部へ該ウエ−ハを移送
する。搬送ア−ムが上記サブプレ−ト(1)をそのアン
ロ−ダ部へ移送し保持体の上面が開放されている間に、
次のウエ−ハ付サブプレ−トを保持体に搬入すると共に
紫外線照射装置(図示略)をその上面に移動させて紫外
線を上面から照射し、上記チャックが戻るまでの間に該
紫外線照射装置を退避させるようにすれば操作に支障が
ない。なお、紫外線照射装置を上記真空チャックと連動
させることもでき、また保持体や加熱プレ−トを石英等
の透明材料で作れば、下面側からも紫外線を照射するこ
とができる(図示略)。
When a synthetic resin adhesive whose adhesive strength is lost or weakened by ultraviolet irradiation is used as the adhesive, the vacuum chuck (11) rises after adsorbing the wafer. The wafer is transferred to an unloader. While the transfer arm transfers the subplate (1) to its unloader section and the upper surface of the holder is open,
The next sub-plate with a wafer is carried into the holder, and the ultraviolet irradiation device (not shown) is moved to the upper surface to irradiate the ultraviolet light from the upper surface. If the evacuation is performed, there is no problem in operation. The ultraviolet irradiation device can be linked with the vacuum chuck, and if the holder and the heating plate are made of a transparent material such as quartz, the ultraviolet light can be irradiated from the lower surface side (not shown).

【0019】図5は、剥離装置の剥離部を組み込み自動
的にウエ−ハを剥離できるようにした工程を示す説明図
である。図において、装置はフレ−ム(18)内に設けら
れ、カセットを搬入する開閉式の投入部の内側には剥離
前のウエ−ハ(3)付サブプレ−ト(1)を収納したカ
セットを保持するカセットエレベ−タ部(19)が設けら
れ、ウエ−ハ付サブプレ−トを1枚づつロ−ダコンベア
部(20)に送り出し、この位置で位置決め機構により定位
置に保持するようにしてある。該ロ−ダコンベア部(20)
に隣接して上記剥離部(21)が設けられており、上記ウエ
−ハ(3)付サブプレ−ト(1)は搬送ア−ム(22)を有
するプレ−ト搬送部(23)により上記剥離部(21)へ送られ
る。
FIG. 5 is an explanatory view showing a process in which a peeling section of a peeling device is incorporated and a wafer can be peeled automatically. In the figure, the apparatus is provided in a frame (18), and a cassette accommodating a sub-plate (1) with a wafer (3) before peeling is provided inside an opening / closing slot for carrying the cassette. A cassette elevator section (19) for holding is provided, and the sub-plates with wafers are sent out one by one to a loader conveyor section (20), and are held at a fixed position by a positioning mechanism at this position. . The loader conveyor section (20)
The sub-plate (1) with the wafer (3) is provided by a plate transport section (23) having a transport arm (22). It is sent to the peeling section (21).

【0020】上記剥離部(21)においては、上述したよう
にウエ−ハ(3)がサブプレ−ト(1)から剥離され、
図5においては図示を省いた上記真空チャック(11)や移
動手段(17)によりウエ−ハ(3)はアンロ−ダコンベア
部(24)へ送られる。該アンロ−ダコンベア部(24)に設け
られたアンロ−ダコンベアが回転するとウエ−ハはカセ
ットエレベ−タ部(25)のカセット内に1枚づつ収納され
る。
In the stripping section (21), the wafer (3) is stripped from the sub-plate (1) as described above,
In FIG. 5, the wafer (3) is sent to the unloader conveyor (24) by the vacuum chuck (11) and the moving means (17) not shown. When the unloader conveyor provided in the unloader conveyor section (24) rotates, the wafers are stored one by one in the cassette of the cassette elevator section (25).

【0021】また、ウエ−ハが剥離されたサブプレ−ト
(1)は、上記プレ−ト搬送部(23)によってアンロ−ダ
コンベア部(26)に送られ、該アンロ−ダコンベア部(26)
のアンロ−ダコンベアによりカセットエレベ−タ部(27)
のカセット内に1枚づつ収納される。
The sub-plate (1) from which the wafer has been peeled is sent to the unloader conveyor section (26) by the plate transport section (23), and the unloader conveyor section (26).
Cassette elevator section by unloader conveyor (27)
Are stored one by one in the cassette.

【0022】なお、上記アンロ−ダコンベア部(24),(2
6) のアンロ−ダコンベアは、接着剤が付着しないよう
テフロン(登録商標)ロ−ラ等を対向状態に並列したコ
ンベアで構成することが好ましい。また、ウエ−ハを収
納するカセットに代えて、適宜の保護シ−トを介在させ
てウエ−ハを積層するようにしてもよい(図示略)。
The unloader conveyors (24), (2)
The unloader conveyor of 6) is preferably constituted by a conveyor in which Teflon (registered trademark) rollers and the like are arranged in parallel so as to prevent the adhesive from adhering. Further, instead of the cassette for accommodating the wafers, the wafers may be laminated with an appropriate protective sheet interposed (not shown).

【0023】ウエ−ハ付サブプレ−トを手動で剥離工程
へ供給するようにするには、図6に示すようにすればよ
い。この場合、フレ−ム(18)に形成した開閉式の投入
部の内側のロ−ダ部(28)に直接ウエ−ハ(3)付サブプ
レ−ト(1)を載置し、またウエ−ハを剥離した後、サ
ブプレ−ト(1)をプレ−ト搬送部(23)によって上記ロ
−ダ部(28)に搬出し、該ロ−ダ部から取り出す点が相違
するが、基本的には上記図5に示す構成とほぼ同一であ
る。
In order to supply the wafer-attached sub-plate to the peeling step manually, the arrangement shown in FIG. 6 may be used. In this case, the sub-plate (1) with the wafer (3) is directly placed on the loader (28) inside the opening / closing type charging section formed on the frame (18). After peeling the c, the sub-plate (1) is carried out to the above-mentioned loading section (28) by the plate transport section (23), and is taken out from the loading section. Is almost the same as the configuration shown in FIG.

【0024】上記図5に示す剥離工程に引き続いてウエ
−ハやサブプレ−トを洗浄する工程を連結することもで
きる。例えば、図7に示すように上記サブプレ−トから
剥離したウエ−ハ(3)を連通して受け入れるようウエ
−ハの洗浄乾燥部(29)を接続し、また上記ウエ−ハ
(3)が剥離されたサブプレ−ト(1)を連通して受け
入れるようサブプレ−トの洗浄乾燥部(30)を接続し、そ
れぞれの洗浄乾燥部(29),(30) の最後にカセットを設け
て清浄化されたウエ−ハ及びサブプレ−トをカセット等
に収納するようにしてもよい。なお、これらの洗浄乾燥
は、接着剤除去洗浄液シャワ−、エアナイフ乾燥、純水
リンスシャワ−、エア若しくは窒素ガスナイフ乾燥等の
工程で行うことができる。
After the peeling step shown in FIG. 5, a step of cleaning the wafer or the sub-plate may be connected. For example, as shown in FIG. 7, a washing / drying section (29) of the wafer is connected so as to receive the wafer (3) peeled off from the sub-plate in a communicating manner. A cleaning and drying section (30) of the sub-plate is connected so that the separated sub-plate (1) can be communicated and received, and a cassette is provided at the end of each of the cleaning and drying sections (29) and (30) for cleaning. The wafers and sub-plates may be stored in a cassette or the like. The washing and drying can be performed by a process such as showering with an adhesive removing washing solution, drying with an air knife, rinsing with pure water, drying with an air or nitrogen gas knife, or the like.

【0025】上記実施例においては、ウエ−ハをサブプ
レ−トから剥離した後ダイシング工程等にウエ−ハを運
んで処理するが、上記ウエ−ハをサブプレ−トから剥離
する前にダイシング工程で使用するウエ−ハシ−ト(ダ
イシングテ−プ)をウエ−ハに貼り付けておいてもよ
い。図8はそのような一実施例を示してあり、薄型化さ
れたウエ−ハ(3)の背面には、ウエ−ハフレ−ム(31)
に支持されたUVテ−プ等のウエ−ハシ−ト(32)が貼り
付けられて保持体(7)の凹部(6)に運ばれる。そし
て、上記図4で示す剥離工程とほぼ同様の工程でウエ−
ハ(3)の背面に貼り付けたウエ−ハシ−ト(32)側を真
空チャック(11)で吸着してウエ−ハ(3)をサブプレ−
ト(1)から剥離する。なお、この際、上記ウエ−ハシ
−ト(32)の接着剤は、剥離温度が上記ウエ−ハ(3)を
サブプレ−ト(1)に仮接着する際に用いた接着剤
(2)の剥離温度よりも高い温度のものを用いており、
それにより上記加熱プレ−トで加熱した際には上記ウエ
−ハシ−ト(32)がウエ−ハ(3)から剥離しないように
してある。剥離されたウエ−ハ(3)には、ウエ−ハシ
−ト(32)が貼られているので、ダイシング工程で図8
(D)に示すようにダイシング・ソ−(33)ですぐにカッ
トでき、処理を簡略化することができる。
In the above embodiment, the wafer is transported to a dicing step or the like after the wafer is peeled off from the sub-plate, and the wafer is processed in the dicing step. The wafer sheet (dicing tape) to be used may be pasted on the wafer. FIG. 8 shows such an embodiment, in which a wafer frame (31) is provided on the back surface of the thinned wafer (3).
A wafer sheet (32), such as a UV tape, supported on the carrier is adhered and carried to the concave portion (6) of the holder (7). Then, the wafer is subjected to a process substantially similar to the peeling process shown in FIG.
The wafer sheet (32) attached to the back of the wafer (3) is sucked by the vacuum chuck (11) and the wafer (3) is sub-plated.
(1). At this time, the adhesive of the wafer sheet (32) is the same as the adhesive (2) used when the wafer (3) was temporarily bonded to the sub-plate (1) at a peeling temperature. Using a temperature higher than the peeling temperature,
This prevents the wafer sheet (32) from peeling off from the wafer (3) when heated by the heating plate. Since a wafer sheet (32) is adhered to the peeled wafer (3), the wafer (3) is subjected to a dicing process as shown in FIG.
As shown in (D), the dicing saw (33) can be used for immediate cutting, and the processing can be simplified.

【0026】図9は、さらに他の実施例を示し、サブプ
レ−トからウエ−ハを剥離し、洗浄乾燥し、ダイシング
のためのウエ−ハシ−ト貼付までの工程を連続的に行え
るようウエ−ハ剥離装置部(34)、ウエ−ハ洗浄装置部(3
5)及びウエ−ハシ−ト貼付装置部(36)を順次連設したも
のである。
FIG. 9 shows still another embodiment, in which wafers are peeled off from the sub-plate, washed and dried, and the steps up to attaching the wafer sheet for dicing can be performed continuously. -Wafer removal unit (34), wafer cleaning unit (3
5) and a wafer attaching device section (36) are sequentially connected.

【0027】上記ウエ−ハ剥離装置部(34)は、基本的に
は上記図5に示す装置とほぼ同じように構成され、ウエ
−ハ付サブプレ−ト(1)は、カセットエレベ−タ部(1
9),(19) 内のカセットに収納され、順次ロ−ダ−コンベ
ア部(20),(20) を経て授受ステ−ション(37)へ送られ、
センタリングされる。該授受ステ−ション(37)に隣接し
て設けたプレ−ト搬送部(23)の搬送ア−ム(22)により、
該ステ−ション(37)からウエ−ハ付サブプレ−ト(1)
は加熱プレ−トや真空チャック等を含む上記剥離部(21)
へ搬送され、上述のようにしてウエ−ハ(3)がサブプ
レ−ト(1)から剥離される。剥離されたウエ−ハ
(3)は、アンロ−ダコンベア部(剥離後ウエ−ハステ
−ション)(24)へ上述したようなチャック(11)を含む移
動手段(17)により移送される。また、サブプレ−ト
(1)は上記プレ−ト搬送部(23)により上記授受ステ−
ション(37)に戻され、適宜のロボットやベルトコンベア
等の移送手段によりサブプレ−ト収納カセットを有する
カセットエレベ−タ部(27),(27) へ運ばれる。なお、上
記カセットエレベ−タ部(19),(27) 等は、それぞれ複数
設けて次々と処理できるようにしてあるが、1つ若しく
は適宜数設けたり、該カセットエレベ−タ部を省略し
て、手動的に供給するようにしてもよい。なお、上記ウ
エ−ハのアンロ−ダコンベア部(24)には、溶融した接着
剤がベルトに付着しないようウエ−ハを浮上させて支持
する複数の突起を設けてあり接着剤が冷却した後該突起
を降下させて搬送ベルト上にウエ−ハを載置するように
してある。
The wafer peeling device section (34) is basically constructed in substantially the same manner as the apparatus shown in FIG. 5, and the wafer-attached sub-plate (1) comprises a cassette elevator section. (1
It is stored in the cassettes in (9) and (19) and sent to the transfer station (37) through the loader conveyor sections (20) and (20) sequentially.
Centered. By a transfer arm (22) of a plate transfer section (23) provided adjacent to the transfer station (37),
Substrate with wafer (1) from the station (37)
Is the peeling part (21) including a heating plate and a vacuum chuck, etc.
The wafer (3) is peeled from the sub-plate (1) as described above. The peeled wafer (3) is transferred to an unloader conveyor section (wafer station after peeling) (24) by the moving means (17) including the chuck (11) as described above. The sub-plate (1) is transmitted and received by the plate transport section (23).
It is returned to the cassette (37) and transported to the cassette elevator units (27), (27) having the sub-plate storage cassettes by a suitable robot or a transfer means such as a belt conveyor. A plurality of cassette elevator units (19), (27), etc. are provided so that they can be processed one after another. However, one or an appropriate number of cassette elevator units may be provided, or the cassette elevator units may be omitted. , May be supplied manually. The unloader conveyor (24) of the wafer is provided with a plurality of projections for supporting the wafer by floating so that the molten adhesive does not adhere to the belt. The projection is lowered so that the wafer is placed on the conveyor belt.

【0028】上記ウエ−ハ洗浄装置部(35)は、ウエ−ハ
を順次洗浄するよう各種の洗浄部をシャッタ−(38)を介
して連続的に設けてある。図10に示すように、各洗浄
部は、ウエ−ハを載置するよう間隔をあけて並行して走
行する複数本のベルトコンベア(39)を有し、該ウエ−ハ
の両面に各種の洗浄液等を同時にシャワ−するよう該ベ
ルト間の上下にノズル(40),(40) を対設し、該コンベア
を左右動させて両面から同時にシャワ−洗浄する。洗浄
液は、酸、アルカリ等各種の洗浄液を用いることがで
き、図においては、第1洗浄部(41)でアセトン洗浄、第
2洗浄部(42)、第3洗浄部(43)でIPA洗浄している。
そして、第4洗浄部(44)で純水洗浄し、最後に乾燥部
(44a)で乾燥して受渡ステ−ション(45)へウエ−ハを
送る。なお、上記シャワ−等は、ウエ−ハを損傷しない
程度の弱いシャワ−圧で行い、各洗浄部から次の洗浄部
へ入る前にはエアナイフ(46)で乾燥するようにしてあ
る。また、最後の乾燥部(44a)ではウエ−ハ両面の凹
凸面内に入り込んでいる水分を充分乾燥できるよう例え
ば約30〜150℃可変の温風装置により約80℃程度
で乾燥できるようにしてある。
The wafer cleaning device section (35) is provided with various cleaning sections continuously through a shutter (38) so as to sequentially clean the wafer. As shown in FIG. 10, each washing section has a plurality of belt conveyors (39) running in parallel at intervals so as to place a wafer, and various types of belt conveyors are provided on both sides of the wafer. Nozzles (40) and (40) are provided above and below between the belts so as to simultaneously wash the cleaning liquid and the like, and the conveyor is moved left and right to simultaneously wash both surfaces. Various cleaning liquids such as acid and alkali can be used as the cleaning liquid. In the figure, acetone cleaning is performed in the first cleaning section (41), and IPA cleaning is performed in the second cleaning section (42) and the third cleaning section (43). ing.
Then, the wafer is washed with pure water in the fourth washing section (44), and finally dried in the drying section (44a), and the wafer is sent to the delivery station (45). The shower and the like are performed with a weak shower pressure that does not damage the wafer, and are dried with an air knife (46) before entering the next washing section from each washing section. Further, in the last drying section (44a), for example, it is possible to dry at about 80 ° C. by using a hot air device capable of varying from about 30 to 150 ° C. so that moisture entering the uneven surface of both surfaces of the wafer can be sufficiently dried. is there.

【0029】上記受渡ステ−ション(45)とウエ−ハシ−
ト貼付装置部(36)の間には、ウエ−ハを吸着保持してウ
エ−ハシ−ト貼付装置部(36)のウエ−ハマウント部(47)
へ送るためのマウンティングチャック(48)が移動可能に
設けられ、また該マウンティングチャック(48)が位置す
る部位の下方のベルトコンベア間には補佐チャック(49)
が上下可動に設けられている(図11)。該補佐チャッ
ク(49)は、マウンティングチャック(48)が降下したとき
上昇してウエ−ハを該マウンティングチャック(48)に吸
着させる。なお、このマウンティングチャック(48)の吸
着面には好ましくはウエ−ハに非接着性の布体を設ける
とよい。
The delivery station (45) and the wafer
The wafer is adsorbed and held between the wafer sticking units (36), and the wafer mount (47) of the wafer sheet sticking unit (36) is held.
A mounting chuck (48) for moving the mounting chuck (48) is provided movably, and an auxiliary chuck (49) is provided between the belt conveyors below the portion where the mounting chuck (48) is located.
Are vertically movable (FIG. 11). The assisting chuck (49) rises when the mounting chuck (48) descends to attract the wafer to the mounting chuck (48). Preferably, a non-adhesive cloth is provided on the wafer on the suction surface of the mounting chuck (48).

【0030】上記受渡ステ−ション(45)には、ウエ−ハ
(3)に形成されているデバイス面及びバンプ面の状態
に応じて、該受渡ステ−ション上でウエ−ハを反転させ
るための反転装置(50)が設けられている。例えば、該受
渡ステ−ション(45)に送られてきた洗浄後のウエ−ハ
(3)が、上面にバンプ面があり、裏面側にデバイス面
があるウエ−ハのときは、該反転装置は作動せずにその
まま上記マウンティングチャック(48)がウエ−ハを吸着
する。また、ウエ−ハの上面がミラ−面で裏面側にデバ
イス面とバンプ面が形成されているときは、上記反転装
置(50)が作動し、ウエ−ハを該ステ−ション(45)上で反
転させて待機し、上記マウンティングチャック(48)で吸
着する。上記のような操作をするため、反転装置のウエ
ーハ吸着チャックは、ウエーハ反転、上下動、前後移動
の機能を有する。
The delivery station (45) is used to reverse the wafer on the delivery station according to the state of the device surface and the bump surface formed on the wafer (3). Are provided. For example, when the washed wafer (3) sent to the delivery station (45) is a wafer having a bump surface on the upper surface and a device surface on the rear surface, the reversing device is used. Does not operate, and the mounting chuck (48) sucks the wafer as it is. When the upper surface of the wafer is a mirror surface and the device surface and the bump surface are formed on the back surface side, the reversing device (50) is operated to place the wafer on the station (45). And stand by, and suck by the mounting chuck (48). In order to perform the above operation, the wafer suction chuck of the reversing device has functions of reversing the wafer, moving up and down, and moving back and forth.

【0031】上記ウエ−ハシ−ト貼付装置部(36)では、
ウエ−ハフレ−ム(31)を周辺に取り付けたウエ−ハシ−
ト(32)がウエ−ハマウント前カセット(51),(51) 内に収
納され、一枚づつロ−ダ−コンベア部(52),(52) を経て
ウエ−ハマウント部(47)へ送られてくる。該ウエ−ハマ
ウント部(47)の下面には、図12に示すようにエアスタ
ンプ(53)が設けられている。上記マウンティングチャッ
ク(48)によってウエ−ハ(3)がウエ−ハシ−ト(32)上
に送られてくると、センタリングした後、該ウエ−ハが
シ−トに接触した時点でエアスタンプが上昇し、シ−ト
にウエ−ハを貼り付ける。その後、ウエ−ハを貼り付け
たウエ−ハシ−トは、アンロ−ダコンベア部(54),(54)
へ送られ、ウエ−ハマウント後カセット(55),(55) 内に
収納される。なお、上記エアスタンプには、ウエ−ハシ
−トに付着しないよう非接着性の布体を設けることが好
ましい。
In the wafer sheet sticking device section (36),
Wafer frame with wafer frame (31) mounted around
The wafer (32) is stored in the cassettes (51), (51) before wafer mounting, and sent one by one to the wafer mounting part (47) via the loader conveyor parts (52), (52). Come. An air stamp (53) is provided on the lower surface of the wafer mount (47) as shown in FIG. When the wafer (3) is sent onto the wafer sheet (32) by the mounting chuck (48), after the centering, the air stamp is released when the wafer comes into contact with the sheet. Ascend and attach the wafer to the sheet. Thereafter, the wafer sheet with the wafer attached thereto is unloaded from the unloader conveyor (54), (54).
After the wafer is mounted, it is stored in cassettes (55) and (55). The air stamp is preferably provided with a non-adhesive cloth so as not to adhere to the wafer sheet.

【0032】図に示すように、上記サブプレ−トから剥
離したウエ−ハを受け取るウエ−ハ剥離装置部(34)の剥
離後ウエ−ハステ−ション(アンロ−ダコンベア部)(2
4)と、洗浄乾燥した後にウエ−ハを受け取るウエ−ハ洗
浄装置部(35)の受渡ステ−ション(45)と、ウエ−ハシ−
トと受渡ステ−ションからのウエ−ハを受け取る上記ウ
エ−ハシ−ト貼付装置部(36)のウエ−ハマウント部(47)
は、上記ウエ−ハ(3)の中心が移動する移動軌跡が一
直線となるよう配置されている。したがって、上記薄型
化したウエ−ハは、常に安定した状態で移送されつつ洗
浄乾燥されてウエ−ハシ−ト(ダイシングテ−プ)に貼
り付けられ、破損するおそれを少なくすることができ
る。
As shown in the drawing, the wafer peeling device (34) for receiving the wafer peeled from the sub-plate has a wafer station (unloader conveyor) (2) after peeling.
4), a delivery station (45) of a wafer cleaning unit (35) for receiving a wafer after cleaning and drying, and
The wafer mount unit (47) of the wafer sheet sticking unit (36) for receiving the wafer from the transfer station and the delivery station.
Are arranged so that the movement locus of the center of the wafer (3) moves in a straight line. Therefore, the thinned wafer is always transported in a stable state, washed and dried, and attached to a wafer sheet (dicing tape), so that the risk of breakage can be reduced.

【0033】[0033]

【発明の効果】本発明は上記のように構成され、サブプ
レ−トに接着剤で回路パタ−ン面を仮接着したウエ−ハ
の背面を研削し薄型化されたウエ−ハを、簡単にかつ破
壊することなくサブプレ−トから剥離することができ、
また洗浄やウエ−ハシ−トへの貼付等の工程まで連続化
するこができる。
According to the present invention, a wafer having the above-mentioned structure, in which the circuit pattern surface is temporarily bonded to the sub-plate with an adhesive, is thinned by grinding the back surface of the wafer. And can be peeled from the sub-plate without breaking,
Further, it is possible to continuously perform processes such as washing and sticking to a wafer sheet.

【図面の簡単な説明】[Brief description of the drawings]

【図1】ウエ−ハの回路パタ−ン面を接着剤でサブプレ
−トに仮接着した状態のウエ−ハ及びサブプレ−トの一
部省略説明図。
FIG. 1 is a partially omitted explanatory view of a wafer and a subplate in a state where a circuit pattern surface of the wafer is temporarily bonded to a subplate with an adhesive.

【図2】剥離装置の一実施例を示す断面図。FIG. 2 is a sectional view showing one embodiment of a peeling device.

【図3】真空チャックを示し、(A)は底面からみた説
明図、(B)は断面図。
FIGS. 3A and 3B show a vacuum chuck, wherein FIG. 3A is an explanatory diagram viewed from the bottom, and FIG.

【図4】(A)〜(D)はウエ−ハをサブプレ−トから
剥離する工程を示す説明図。
FIGS. 4A to 4D are explanatory views showing a step of peeling a wafer from a sub-plate.

【図5】剥離部を組み込んだ自動処理による一実施例の
構成図。
FIG. 5 is a configuration diagram of one embodiment by automatic processing incorporating a peeling unit.

【図6】手動的に行う場合の一実施例を示す全体の構成
図。
FIG. 6 is an overall configuration diagram showing an embodiment in the case of performing manually.

【図7】洗浄乾燥工程を接続した一実施例を示す構成
図。
FIG. 7 is a configuration diagram showing one embodiment in which a washing and drying step is connected.

【図8】(A)〜(D)はウエ−ハ剥離工程の他の実施
例を示す説明図。
FIGS. 8A to 8D are explanatory views showing another embodiment of the wafer peeling step.

【図9】ウエ−ハシ−トへの貼付工程まで連続化した処
理装置の実施例を示す構成図。
FIG. 9 is a configuration diagram showing an embodiment of a processing apparatus that is continuous up to a step of attaching to a wafer sheet.

【図10】図9に示す装置の洗浄装置部の説明図。FIG. 10 is an explanatory view of a cleaning unit of the apparatus shown in FIG. 9;

【図11】図9に示す装置の受渡ステ−ション部の説明
図。
11 is an explanatory diagram of a delivery station unit of the device shown in FIG.

【図12】図9に示す装置のウエ−ハマウント部の説明
図。
12 is an explanatory diagram of a wafer mount section of the device shown in FIG.

【符号の説明】[Explanation of symbols]

1 サブプレ−ト 3 ウエ−ハ 5 剥離装置 7 保持体 10 加温プレ−ト 11 真空チャック 16 緩衝部材 DESCRIPTION OF SYMBOLS 1 Subplate 3 Wafer 5 Peeling device 7 Holder 10 Heating plate 11 Vacuum chuck 16 Buffer member

─────────────────────────────────────────────────────
────────────────────────────────────────────────── ───

【手続補正書】[Procedure amendment]

【提出日】平成13年11月1日(2001.11.
1)
[Submission date] November 1, 2001 (2001.11.
1)

【手続補正1】[Procedure amendment 1]

【補正対象書類名】明細書[Document name to be amended] Statement

【補正対象項目名】請求項4[Correction target item name] Claim 4

【補正方法】変更[Correction method] Change

【補正内容】[Correction contents]

【手続補正2】[Procedure amendment 2]

【補正対象書類名】明細書[Document name to be amended] Statement

【補正対象項目名】請求項12[Correction target item name] Claim 12

【補正方法】変更[Correction method] Change

【補正内容】[Correction contents]

【手続補正3】[Procedure amendment 3]

【補正対象書類名】明細書[Document name to be amended] Statement

【補正対象項目名】0014[Correction target item name] 0014

【補正方法】変更[Correction method] Change

【補正内容】[Correction contents]

【0014】ウエ−ハを移動させる際、接着剤が加熱溶
融されているので、上記ウエ−ハを上記サブプレ−トに
対して垂直方向にそのまま引き上げると、面状に広がる
上記溶融状態の接着剤層によってウエ−ハが剥離しにく
いことがある。そこで、本発明においては、上記移動手
段は、真空チャックが上記ウエ−ハを吸着保持した後、
上記サブプレ−トに沿ってウエ−ハを横方向に移動させ
るようにしてある。さらに好ましくは、ウエ−ハをチャ
ック吸着保持した段階で、該真空チャックを時計方向、
反時計方向に数度の回転角で交互に転させ接着剤を線
状に寄せ集めて接着力を弱めた後、横方向にスライドす
ることによりウエ−ハを剥離するようにしている。した
がって、そのような接着剤を使用する場合には上記移動
手段は、真空チャックを回動させる機能も有する。
When the wafer is moved, the adhesive is heated and melted. Therefore, if the wafer is directly lifted in the vertical direction with respect to the subplate, the adhesive in the molten state spreads in a plane. Depending on the layer, the wafer may not be easily peeled off. Therefore, in the present invention, after the vacuum chuck sucks and holds the wafer,
The wafer is moved in the lateral direction along the subplate. More preferably, when the wafer is chucked and held, the vacuum chuck is rotated clockwise.
After weakening the adhesive force gathered the adhesive is rotating alternately linearized with the rotation angle of a few degrees counterclockwise, weather by sliding laterally - so that stripping the wafer. Therefore, when such an adhesive is used, the moving means also has a function of rotating the vacuum chuck.

【手続補正4】[Procedure amendment 4]

【補正対象書類名】明細書[Document name to be amended] Statement

【補正対象項目名】0016[Correction target item name] 0016

【補正方法】変更[Correction method] Change

【補正内容】[Correction contents]

【0016】上記真空チャック(11)がウエ−ハ(3)を
吸着保持すると、該真空チャック(11)は時計方向、反時
方向に数度回動して接着剤を略線状に集めた後、横方
向にスライドし、サブプレ−トからウエ−ハを剥離させ
てアンロ−ダ部(図示略)へ搬出する(図4(B))。
その際、真空チャック(11)を回転、スライド後に上昇さ
せてウエ−ハのアンロ−ダ部へウエ−ハを運び出すよう
にしてもよい(図4(C))。その後、サブプレ−ト
(1)を、適宜のロボットや搬送ア−ム等の搬送手段に
よりサブプレ−トのアンロ−ダ部へ取り出す(図4
(D))。
When the vacuum chuck (11) holds the wafer (3) by suction, the vacuum chuck (11) is rotated clockwise and counterclockwise.
The adhesive is rotated several degrees in the measuring direction to collect the adhesive in a substantially linear shape, and then slid laterally to separate the wafer from the subplate and to carry it out to an unloader (not shown) (see FIG. 4 (B)).
At this time, the wafer may be lifted after rotating and sliding the vacuum chuck (11) to carry the wafer to the unloader portion of the wafer (FIG. 4C). Thereafter, the sub-plate (1) is taken out to the unloader section of the sub-plate by a suitable robot or a transfer means such as a transfer arm (FIG. 4).
(D)).

Claims (17)

【特許請求の範囲】[Claims] 【請求項1】 回路パタ−ン面に接着剤を塗布したウエ
−ハをサブプレ−トに貼り付け、その背面を研削して薄
型化したウエ−ハを該サブプレ−トから剥離する装置で
あって、該装置は、ウエ−ハが貼り付けられたサブプレ
−トを定位置に保持する保持手段と、ウエ−ハとサブプ
レ−ト間の接着剤の接着力を弱める接着力消失手段と、
上記ウエ−ハの背面を吸着保持する吸着手段と、該吸着
手段を上記ウエ−ハに接する位置と上記サブプレ−トか
ら離れる位置に移動させる移動手段を含むことを特徴と
するウエ−ハ剥離装置。
1. An apparatus for attaching a wafer having an adhesive applied to a circuit pattern surface to a sub-plate and grinding the back surface of the thinned wafer from the sub-plate. The apparatus comprises: holding means for holding the sub-plate on which the wafer is attached in a fixed position; adhesive-loss means for reducing the adhesive strength of the adhesive between the wafer and the sub-plate;
A wafer peeling device comprising: suction means for sucking and holding the back surface of the wafer; and moving means for moving the suction means to a position in contact with the wafer and a position away from the subplate. .
【請求項2】 上記接着力消失手段は、接着剤を溶融さ
せる加熱手段である請求項1に記載のウエ−ハ剥離装
置。
2. The wafer peeling device according to claim 1, wherein said adhesive force eliminating means is a heating means for melting the adhesive.
【請求項3】 上記移動手段は、ウエ−ハを上記吸着手
段が吸着した際、該吸着手段を上記サブプレ−トに沿っ
て横方向にスライドさせる請求項1に記載のウエ−ハ剥
離装置。
3. The wafer peeling device according to claim 1, wherein the moving means slides the suction means in a lateral direction along the sub-plate when the suction means sucks the wafer.
【請求項4】 上記移動手段は、吸着手段をスライドさ
せる前に該吸着手段を正転、反転させる請求項3に記載
のウエ−ハ剥離装置。
4. The wafer peeling device according to claim 3, wherein the moving means rotates the suction means forward and reverse before sliding the suction means.
【請求項5】 上記接着力消失手段は、接着剤に紫外線
を照射する紫外線照射手段である請求項1に記載のウエ
−ハ剥離装置。
5. The wafer peeling device according to claim 1, wherein said adhesive force eliminating means is an ultraviolet irradiation means for irradiating the adhesive with ultraviolet light.
【請求項6】 上記吸着手段は、ウエ−ハの大きさに応
じて吸着部を選択可能に設けられている請求項1ないし
5のいずれかに記載のウエ−ハ剥離装置。
6. The wafer peeling apparatus according to claim 1, wherein said suction means is provided so that a suction part can be selected according to a size of the wafer.
【請求項7】 上記吸着手段のウエ−ハ貼着面の外径
は、ウエ−ハの外径よりも小さく形成されている請求項
1に記載のウエ−ハ剥離装置。
7. The wafer peeling device according to claim 1, wherein an outer diameter of the wafer attaching surface of the suction means is smaller than an outer diameter of the wafer.
【請求項8】 上記吸着手段のウエ−ハ貼着面の外径
は、ウエ−ハの外径よりも2〜20mm小さい請求項7に
記載のウエ−ハ剥離装置。
8. The wafer peeling device according to claim 7, wherein the outer diameter of the wafer attaching surface of the suction means is smaller than the outer diameter of the wafer by 2 to 20 mm.
【請求項9】 上記吸着手段のウエ−ハ吸着面には、ウ
エ−ハに非接着の表面を有する緩衝部材が設けられてい
る請求項1に記載のウエ−ハ剥離装置。
9. The wafer peeling device according to claim 1, wherein a buffer member having a surface that is not adhered to the wafer is provided on the wafer suction surface of the suction means.
【請求項10】 上記吸着手段のウエ−ハ吸着面には、通
気性を有するウエ−ハに非接着の布体が設けられている
請求項1または7に記載のウエ−ハ剥離装置。
10. The wafer peeling device according to claim 1, wherein a wafer body that is not bonded to a gas permeable wafer is provided on a wafer suction surface of the suction means.
【請求項11】 上記ウエ−ハの背面にはウエ−ハシ−ト
が貼り付けられている請求項1に記載のウエ−ハ剥離装
置。
11. The wafer peeling device according to claim 1, wherein a wafer sheet is attached to a back surface of the wafer.
【請求項12】 接着剤でサブプレ−トに貼り付けられ背
面を研削して薄型化されたウエ−ハを有するウエ−ハ付
サブプレ−トを加熱し、上記ウエ−ハを貼り付けている
接着剤を剥離可能な状態に溶融し、該ウエ−ハの背面に
チャックを降下させて該チャックで吸着保持し、該チャ
ックを正転、反転させた後横移動させてウエ−ハをサブ
プレ−トから剥離するウエ−ハ剥離方法。
12. A wafer-attached sub-plate having a wafer which has been thinned by polishing the back surface of the sub-plate which has been adhered to the sub-plate with an adhesive, and the above-mentioned wafer has been adhered. The agent is melted so that it can be peeled off, the chuck is lowered to the back of the wafer, suction-held by the chuck, the chuck is rotated forward and inverted, and then laterally moved to sub-plate the wafer. Wafer peeling method for peeling from wafers.
【請求項13】 上記チャックのウエ−ハ吸着面の外径
は、ウエ−ハの外径よりも小さい請求項12に記載のウ
エ−ハ剥離方法。
13. The wafer peeling method according to claim 12, wherein an outer diameter of a wafer suction surface of the chuck is smaller than an outer diameter of the wafer.
【請求項14】 上記チャックによる吸着保持は通気性を
有するウエ−ハに非接着の布体を介して行われる請求項
12または13に記載のウエ−ハ剥離方法。
14. The wafer peeling method according to claim 12, wherein the suction holding by the chuck is performed via a non-adhesive cloth body to a gas permeable wafer.
【請求項15】 上記ウエ−ハの背面にはウエ−ハシ−ト
が貼り付けられている請求項12に記載のウエ−ハ剥離
方法。
15. The wafer peeling method according to claim 12, wherein a wafer sheet is attached to a back surface of the wafer.
【請求項16】 上記請求項1に記載の剥離装置を含むウ
エ−ハ剥離装置部と、該ウエ−ハ剥離装置部でサブプレ
−トから剥離されたウエ−ハを受け取りベルト搬送しな
がら洗浄乾燥するウエ−ハ洗浄装置部と、ウエ−ハフレ
−ムを周縁に取り付けたウエ−ハシ−トに上記ウエ−ハ
洗浄装置部で洗浄乾燥されたウエ−ハを貼り付けるウエ
−ハシ−ト貼付装置を連設し、サブプレ−トから剥離さ
れた薄型化ウエ−ハを洗浄乾燥してウエ−ハシ−トに連
続的に貼り付けるようにしたウエ−ハ処理装置。
16. A wafer peeling device including the peeling device according to claim 1, and a wafer peeled from the sub-plate by the wafer peeling device, and is washed and dried while being conveyed by a belt. A wafer cleaning device, and a wafer sheet attaching device for attaching a wafer washed and dried by the wafer cleaning device to a wafer having a wafer frame attached to a periphery thereof. A wafer processing apparatus in which thinned wafers separated from a sub-plate are washed, dried, and continuously attached to a wafer sheet.
【請求項17】 上記サブプレ−トから剥離したウエ−ハ
を受け取るウエ−ハ剥離装置部の剥離後ウエ−ハステ−
ションと、洗浄乾燥した後にウエ−ハを受け取るウエ−
ハ洗浄装置部の受渡ステ−ションと、ウエ−ハシ−トと
受渡ステ−ションからのウエ−ハを受け取る上記ウエ−
ハシ−ト貼付装置部のウエ−ハマウント部は上記ウエ−
ハの中心が移動する移動軌跡が一直線となるように配置
されていることを特徴とする請求項16に記載のウエ−
ハ処理装置。
17. A post-peeling wafer stay of a wafer peeling device for receiving a wafer peeled from the subplate.
And a wafer to receive the wafer after washing and drying
A delivery station of the cleaning unit, and a wafer sheet and the wafer for receiving the wafer from the delivery station.
The wafer mount part of the sheet sticking device is
17. The wafer according to claim 16, wherein the trajectory along which the center of the c moves moves is arranged in a straight line.
C processing equipment.
JP2001159872A 2000-07-21 2001-05-29 Device and method for releasing wafer and wafer treatment device using the same Pending JP2002100595A (en)

Priority Applications (1)

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Application Number Priority Date Filing Date Title
JP2000-220089 2000-07-21
JP2000220089 2000-07-21
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Publication Number Publication Date
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WO2008007454A1 (en) * 2006-07-14 2008-01-17 Tokyo Ohka Kogyo Co., Ltd. Support plate, transfer apparatus, peeling apparatus and peeling method
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