TW201135429A - Heat sink - Google Patents

Heat sink Download PDF

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Publication number
TW201135429A
TW201135429A TW099110812A TW99110812A TW201135429A TW 201135429 A TW201135429 A TW 201135429A TW 099110812 A TW099110812 A TW 099110812A TW 99110812 A TW99110812 A TW 99110812A TW 201135429 A TW201135429 A TW 201135429A
Authority
TW
Taiwan
Prior art keywords
heat
heat sink
base
conductor
main body
Prior art date
Application number
TW099110812A
Other languages
English (en)
Inventor
Zeu-Chia Tan
Original Assignee
Hon Hai Prec Ind Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hon Hai Prec Ind Co Ltd filed Critical Hon Hai Prec Ind Co Ltd
Priority to TW099110812A priority Critical patent/TW201135429A/zh
Priority to US12/843,076 priority patent/US20110247796A1/en
Publication of TW201135429A publication Critical patent/TW201135429A/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3736—Metallic materials
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F28—HEAT EXCHANGE IN GENERAL
    • F28F—DETAILS OF HEAT-EXCHANGE AND HEAT-TRANSFER APPARATUS, OF GENERAL APPLICATION
    • F28F13/00—Arrangements for modifying heat-transfer, e.g. increasing, decreasing
    • F28F13/14—Arrangements for modifying heat-transfer, e.g. increasing, decreasing by endowing the walls of conduits with zones of different degrees of conduction of heat
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F28—HEAT EXCHANGE IN GENERAL
    • F28F—DETAILS OF HEAT-EXCHANGE AND HEAT-TRANSFER APPARATUS, OF GENERAL APPLICATION
    • F28F21/00—Constructions of heat-exchange apparatus characterised by the selection of particular materials
    • F28F21/08—Constructions of heat-exchange apparatus characterised by the selection of particular materials of metal
    • F28F21/081—Heat exchange elements made from metals or metal alloys
    • F28F21/084—Heat exchange elements made from metals or metal alloys from aluminium or aluminium alloys
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F28—HEAT EXCHANGE IN GENERAL
    • F28F—DETAILS OF HEAT-EXCHANGE AND HEAT-TRANSFER APPARATUS, OF GENERAL APPLICATION
    • F28F21/00—Constructions of heat-exchange apparatus characterised by the selection of particular materials
    • F28F21/08—Constructions of heat-exchange apparatus characterised by the selection of particular materials of metal
    • F28F21/081—Heat exchange elements made from metals or metal alloys
    • F28F21/085—Heat exchange elements made from metals or metal alloys from copper or copper alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367—Cooling facilitated by shape of device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Thermal Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Cooling Or The Like Of Electrical Apparatus (AREA)

Description

201135429 六、發明說明： 【發明所屬之技術領域】 [0001] 本發明涉及一種散熱器。 【先前技術】 [0002] 習知電腦系統中，散熱器之材質通常為鋁或者銅。然， : 鋁材散熱器雖便宜，但散熱效果不佳，而銅製散熱器之 散熱效果雖好，卻價格昂貴。 【發明内容】 [0003] 鑒於以上，有必要提供一種價格低廉，且散熱效果佳之 Ο ^ 散熱器。 . [〇〇〇4] 一種散熱器，包括一主體及一設於該主體底部之基座， 該散熱器還包括一黏附於該基座底部之導熱體，該導熱 體之熱傳導係數大於該基座之熱傳導係數。 [0005] 相較習知技術，該散熱器透過黏附於該主體底部之基座 上之導熱體，可增進散熱器均熱及提高散熱效果，又可 節約成本。
G 【實施方式】 [0006] 請參照圖1，本發明散熱器1之較佳實施方式，包括一主 體20、一基座22及一導熱體10。本實施方式中，該導熱 體係一銅箔。 [0007] 該主體20由銅材製成，該基座22由鋁材製成。該基座22 設於該主體20之底部。基座22之底部設有一突出部220， 可用以接觸一發熱元件。該導熱體10中部對應該基座22 之突出部220形成一中空部12。 099110812 表單編號A0101 第3頁/共8頁 0992018985-0 201135429 [0008] [0009] [0010] [0011] [0012] [0013] [0014] [0015] [0016] 請參照圖2，將該導熱體1〇黏貼於該散熱器丨之基座。之 底部，使該基座22底部之突出部22〇穿過該導熱體的中 空部12。使用時’將該基座22之突出部22()緊貼於發熱元 件上，以給該發熱元件散熱。該導熱體1()緊貼該基座22 ，可增進散熱器1均熱並有效提高散熱效果。 於本實施m該突出㈣G亦可定㈣導熱體1〇之位 置，便於將該導熱體10黏貼於該基座22。 於其他實施方式中’該導熱體U)可為任何形狀，其材質 亦可替換成其他導熱體，如石墨等： 、 於其他實施方式中，該主體20可由鋁材製成。 在本實施方式中，該導熱體1Q厚度极3毫米在其他實 施方式中，該導熱體10之厚度可改變，導熱體越厚、，散貝 熱效果越佳。 综上所述，本發明確已符合發料利之要#，遂依法提 出專利中请。惟’ u上所述者僅為本發明之較佳實施方 式，自不能以此限制本案之_請專利範圍。舉凡熟悉本 案技藝之人士爰依本發明之精神所作之等效修飾或變化 ，皆應涵蓋於以下申請專利範圍内。 【圖式簡單說明】 圖1係本發明散熱器較佳實施方式之立體分解圖。 圖2係圖1之散熱器之立體級裝圖。 【主要元件符號^說明】 散熱器：1 099110812 表單編號A0101 第4頁/共 1 0992( 201135429 [0017] 導熱體 [0018] 中空部 [0019] 主體： [0020] 基座： [0021] 突出部 :10 ：12 20 22 ：220
099110812 表單編號A0101 第5頁/共8頁 0992018985-0

Claims (1)

  1. 201135429 七、申請專利範圍： 1 · 一種散熱器，包括—主體及一設於該主體底部之基座，該 散熱器還包括一黏附於該基座底部之導熱體，導熱體之熱 傳導係數大於基座之熱傳導係數。 2 .如申s青專利範圍第1項所述之散熱器，其中該主體由銅材 製成。 3 .如申請專利範圍第丨項所述之散熱器，其中該主體由鋁材 製成。 4 ·如申請專利範圍第丨項所述之散熱器，其中該導熱體為銅 箱。 5 .如申请專利範.圍第1項所述之敷熱器，其.中該導熱體為石 墨。 6 .如申請專利範圍第1項所述之散熱器，其中該基座底部設 有一突出部’該突出部穿過該導熱體以接觸一發熱元件。 099110812 表單編號A0101 0992018985-0
TW099110812A 2010-04-07 2010-04-07 Heat sink TW201135429A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
TW099110812A TW201135429A (en) 2010-04-07 2010-04-07 Heat sink
US12/843,076 US20110247796A1 (en) 2010-04-07 2010-07-26 Heat sink

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW099110812A TW201135429A (en) 2010-04-07 2010-04-07 Heat sink

Publications (1)

Publication Number Publication Date
TW201135429A true TW201135429A (en) 2011-10-16

Family

ID=44760090

Family Applications (1)

Application Number Title Priority Date Filing Date
TW099110812A TW201135429A (en) 2010-04-07 2010-04-07 Heat sink

Country Status (2)

Country Link
US (1) US20110247796A1 (zh)
TW (1) TW201135429A (zh)

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4283464A (en) * 1979-05-08 1981-08-11 Norman Hascoe Prefabricated composite metallic heat-transmitting plate unit
JP3517831B2 (ja) * 1999-07-13 2004-04-12 宏巳 片岡 ヒートシンク並びにその製造方法
US20010030039A1 (en) * 2000-03-10 2001-10-18 Showa Aluminum Corporation Aluminum-copper clad member, method of manufacturing the same, and heat sink
US7219721B2 (en) * 2002-01-16 2007-05-22 Fujitsu Limited Heat sink having high efficiency cooling capacity and semiconductor device comprising it
US20030183379A1 (en) * 2002-03-29 2003-10-02 Krassowski Daniel W. Optimized heat sink using high thermal conducting base and low thermal conducting fins
US20050252649A1 (en) * 2004-05-11 2005-11-17 Ming-Chi Chiu Leadless lower temperature co-crystal phase transition metal heat conductive device
JP4299261B2 (ja) * 2005-03-31 2009-07-22 東洋炭素株式会社 伝熱シート、放熱構造体および伝熱シートの使用方法
US20090308584A1 (en) * 2008-06-12 2009-12-17 Tai-Her Yang Thermal conduction principle and device of the multi-layers structure with different thermal characteristics

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Publication number Publication date
US20110247796A1 (en) 2011-10-13

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