SG10201708364XA - Compositions and methods for selectively etching titanium nitride - Google Patents

Compositions and methods for selectively etching titanium nitride

Info

Publication number
SG10201708364XA
SG10201708364XA SG10201708364XA SG10201708364XA SG10201708364XA SG 10201708364X A SG10201708364X A SG 10201708364XA SG 10201708364X A SG10201708364X A SG 10201708364XA SG 10201708364X A SG10201708364X A SG 10201708364XA SG 10201708364X A SG10201708364X A SG 10201708364XA
Authority
SG
Singapore
Prior art keywords
compositions
methods
titanium nitride
selectively etching
etching titanium
Prior art date
Application number
SG10201708364XA
Inventor
Li-Min Chen
Steven Lippy
Emanuel I Cooper
Lingyan Song
Original Assignee
Entegris Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Entegris Inc filed Critical Entegris Inc
Publication of SG10201708364XA publication Critical patent/SG10201708364XA/en

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/02—Etching, surface-brightening or pickling compositions containing an alkali metal hydroxide
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/0005—Other compounding ingredients characterised by their effect
    • C11D3/0073—Anticorrosion compositions
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/02—Inorganic compounds ; Elemental compounds
    • C11D3/04—Water-soluble compounds
    • C11D3/044—Hydroxides or bases
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/26—Organic compounds containing nitrogen
    • C11D3/30—Amines; Substituted amines ; Quaternized amines
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/39—Organic or inorganic per-compounds
    • C11D3/3942—Inorganic per-compounds
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/39—Organic or inorganic per-compounds
    • C11D3/3947—Liquid compositions
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/395—Bleaching agents
    • C11D3/3956—Liquid compositions
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/02—Inorganic compounds
    • C11D7/04—Water-soluble compounds
    • C11D7/06—Hydroxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
    • C23G1/00—Cleaning or pickling metallic material with solutions or molten salts
    • C23G1/14—Cleaning or pickling metallic material with solutions or molten salts with alkaline solutions
    • C23G1/20—Other heavy metals
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/423—Stripping or agents therefor using liquids only containing mineral acids or salts thereof, containing mineral oxidizing substances, e.g. peroxy compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052—Wet cleaning only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
    • H01L21/02063—Cleaning during device manufacture during, before or after processing of insulating layers the processing being the formation of vias or contact holes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
    • C11D2111/22—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31144—Etching the insulating layers by chemical or physical means using masks
SG10201708364XA 2013-06-06 2014-06-06 Compositions and methods for selectively etching titanium nitride SG10201708364XA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US201361831928P 2013-06-06 2013-06-06

Publications (1)

Publication Number Publication Date
SG10201708364XA true SG10201708364XA (en) 2017-11-29

Family

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Family Applications (2)

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SG11201509933QA SG11201509933QA (en) 2013-06-06 2014-06-06 Compositions and methods for selectively etching titanium nitride
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Country Status (8)

Country Link
US (1) US10920141B2 (en)
EP (1) EP3004287B1 (en)
JP (2) JP6723152B2 (en)
KR (1) KR102338550B1 (en)
CN (2) CN105683336A (en)
SG (2) SG11201509933QA (en)
TW (1) TWI651396B (en)
WO (1) WO2014197808A1 (en)

Families Citing this family (109)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9765288B2 (en) * 2012-12-05 2017-09-19 Entegris, Inc. Compositions for cleaning III-V semiconductor materials and methods of using same
CN105683336A (en) 2013-06-06 2016-06-15 高级技术材料公司 Compositions and methods for selectively etching titanium nitride
CN112442374A (en) 2013-07-31 2021-03-05 恩特格里斯公司 Aqueous formulations with Cu/W compatibility for removal of metal hardmask and post-etch residues
SG11201601158VA (en) 2013-08-30 2016-03-30 Advanced Tech Materials Compositions and methods for selectively etching titanium nitride
US9562211B2 (en) 2013-12-06 2017-02-07 Fujifilm Electronic Materials U.S.A., Inc. Cleaning formulation for removing residues on surfaces
TWI654340B (en) 2013-12-16 2019-03-21 美商恩特葛瑞斯股份有限公司 Ni:NiGe:Ge SELECTIVE ETCH FORMULATIONS AND METHOD OF USING SAME
EP3084809A4 (en) 2013-12-20 2017-08-23 Entegris, Inc. Use of non-oxidizing strong acids for the removal of ion-implanted resist
KR102290209B1 (en) 2013-12-31 2021-08-20 엔테그리스, 아이엔씨. Formulations to selectively etch silicon and germanium
US20160340620A1 (en) 2014-01-29 2016-11-24 Advanced Technology Materials, Inc. Post chemical mechanical polishing formulations and method of use
WO2015119925A1 (en) 2014-02-05 2015-08-13 Advanced Technology Materials, Inc. Non-amine post-cmp compositions and method of use
US9297081B2 (en) * 2014-02-21 2016-03-29 Ecolab Usa Inc. Use of neutralizing agent in olefin or styrene production
US9803162B2 (en) * 2014-04-10 2017-10-31 Mitsubishi Gas Chemical Company, Inc. Liquid composition for cleaning semiconductor device, and method for cleaning semiconductor device
US11978622B2 (en) * 2014-06-30 2024-05-07 Entegris, Inc. Aqueous and semi-aqueous cleaners for the removal of post-etch residues with tungsten and cobalt compatibility
KR102255577B1 (en) * 2014-08-25 2021-05-25 엘지디스플레이 주식회사 Etching composition
CN107078044B (en) * 2014-11-13 2020-06-19 三菱瓦斯化学株式会社 Cleaning liquid for semiconductor element with suppressed damage of cobalt, and method for cleaning semiconductor element using same
TWI639730B (en) * 2015-02-13 2018-11-01 關東鑫林科技股份有限公司 Etching liquid composition and etching method using the same
US9976111B2 (en) 2015-05-01 2018-05-22 Versum Materials Us, Llc TiN hard mask and etch residual removal
JP6761166B2 (en) * 2015-07-23 2020-09-23 セントラル硝子株式会社 Wet etching method and etching solution
WO2017019825A1 (en) 2015-07-29 2017-02-02 Ecolab Usa Inc. Heavy amine neutralizing agents for olefin or styrene production
TWI705132B (en) * 2015-10-08 2020-09-21 日商三菱瓦斯化學股份有限公司 Liquid composition for cleaning semiconductor element, cleaning method of semiconductor element, and manufacturing method of semiconductor element
TWI816635B (en) * 2015-10-15 2023-10-01 日商三菱瓦斯化學股份有限公司 Liquid composition for cleaning semiconductor components, cleaning method for semiconductor components, and manufacturing method for semiconductor components
EP3436621B1 (en) * 2016-03-29 2020-02-12 Technic France Solution and method for etching titanium based materials
US10982129B2 (en) * 2016-08-05 2021-04-20 NuGeneration Technologies, LLC Composition and method for making converter-dissolver composition for dissolving metal sulfate scales from surfaces
JP6860276B2 (en) * 2016-09-09 2021-04-14 花王株式会社 Cleaning agent composition for peeling resin mask
EP3299323B1 (en) 2016-09-23 2020-04-01 Otis Elevator Company Secondary car operating panel for elevator cars
KR102160019B1 (en) * 2016-09-29 2020-09-28 후지필름 가부시키가이샤 Treatment liquid and treatment method of laminated body
KR101966808B1 (en) 2016-09-30 2019-04-08 세메스 주식회사 Anhydrous substrate cleaning compositions, substrate cleaning method and substrate treating apparatus
WO2018067763A1 (en) 2016-10-06 2018-04-12 Fujifilm Electronic Materials U.S.A., Inc. Cleaning formulations for removing residues on semiconductor substrates
KR20180060489A (en) * 2016-11-29 2018-06-07 삼성전자주식회사 Etching composition and method for fabricating semiconductor device by using the same
KR20180068591A (en) * 2016-12-14 2018-06-22 삼성전자주식회사 Etching composition and method for fabricating semiconductor device by using the same
TWI735732B (en) * 2017-01-17 2021-08-11 美商恩特葛瑞斯股份有限公司 Post-etch residue removal for advanced node beol processing
JP2020508369A (en) * 2017-02-10 2020-03-19 フジフイルム エレクトロニック マテリアルズ ユー．エス．エー．， インコーポレイテッド Formulation for cleaning
WO2018175222A1 (en) * 2017-03-24 2018-09-27 Fujifilm Electronic Materials U.S.A., Inc. Cleaning compositions for removing residues on semiconductor substrates
TWI808965B (en) * 2017-03-31 2023-07-21 日商關東化學股份有限公司 Etching liquid composition and etching method for ti layer or ti-containing layer
TWI703210B (en) * 2017-04-11 2020-09-01 美商恩特葛瑞斯股份有限公司 Post chemical mechanical polishing formulations and method of use
EP3631045A4 (en) * 2017-05-25 2021-01-27 Fujifilm Electronic Materials U.S.A., Inc. Chemical mechanical polishing slurry for cobalt applications
CN107229193B (en) * 2017-07-25 2019-04-23 上海新阳半导体材料股份有限公司 A kind of cleaning agent, preparation method and application
TW201912775A (en) * 2017-08-22 2019-04-01 美商富士軟片電子材料美國股份有限公司 Cleaning compositions
KR102295991B1 (en) * 2017-08-31 2021-09-01 후지필름 가부시키가이샤 Treatment solution, kit, and substrate cleaning method
KR101967157B1 (en) 2017-11-06 2019-04-09 한국원자력연구원 Radiation sensor having schottky contact structure between metal-semiconductor
WO2019110681A1 (en) 2017-12-08 2019-06-13 Basf Se Cleaning composition for post-etch or post ash residue removal from a semiconductor substrate and corresponding manufacturing process
CN111566255A (en) 2017-12-18 2020-08-21 恩特格里斯公司 Chemically resistant multilayer coating applied by atomic layer deposition
JP6798045B2 (en) * 2018-01-16 2020-12-09 株式会社トクヤマ Processing liquid for semiconductor wafers containing hypochlorite ions
KR102448220B1 (en) * 2018-01-25 2022-09-27 메르크 파텐트 게엠베하 Photoresist Remover Composition
WO2019146414A1 (en) * 2018-01-26 2019-08-01 日清エンジニアリング株式会社 Copper microparticles
US10934484B2 (en) * 2018-03-09 2021-03-02 Versum Materials Us, Llc Etching solution for selectively removing silicon-germanium alloy from a silicon-germanium/ germanium stack during manufacture of a semiconductor device
US11499236B2 (en) * 2018-03-16 2022-11-15 Versum Materials Us, Llc Etching solution for tungsten word line recess
KR102487940B1 (en) * 2018-03-19 2023-01-16 삼성디스플레이 주식회사 Etchant composition, and method for manufacturing metal pattern and array substrate using the same
KR102524745B1 (en) * 2018-03-23 2023-04-25 가부시끼가이샤 도시바 Treatment solution and treatment method
US10752867B2 (en) 2018-03-28 2020-08-25 Fujifilm Electronic Materials U.S.A., Inc. Cleaning compositions
JP7105084B2 (en) * 2018-03-30 2022-07-22 ナガセケムテックス株式会社 Etchant composition
US20210189298A1 (en) * 2018-04-04 2021-06-24 Basf Se IMIDAZOLIDINETHIONE-CONTAINING COMPOSITIONS FOR POST-ASH RESIDUE REMOVAL AND/OR FOR OXIDATIVE ETCHING OF A LAYER OR MASK COMPRISING TiN
TWI808161B (en) 2018-04-27 2023-07-11 日商三菱瓦斯化學股份有限公司 Aqueous composition and cleaning method using the composition
US11613720B2 (en) 2018-04-27 2023-03-28 Mitsubishi Gas Chemical Company, Inc. Aqueous composition and cleaning method using same
WO2019208686A1 (en) * 2018-04-27 2019-10-31 三菱瓦斯化学株式会社 Aqueous composition and cleaning method using same
JP7144532B2 (en) * 2018-05-01 2022-09-29 アプライド マテリアルズ インコーポレイテッド Method for increasing the selectivity of a selective etching process
CN110484919A (en) * 2018-05-14 2019-11-22 深圳市裕展精密科技有限公司 The method and surface of decoating liquid and its stripping titanium-containing film are formed with the strip method of the substrate of titanium-containing film
KR102346832B1 (en) * 2018-05-23 2022-01-03 삼성에스디아이 주식회사 Etching composition for silicon nitride layer and etching process using the same
JP7128948B2 (en) * 2018-07-06 2022-08-31 インテグリス・インコーポレーテッド Improvements for selective etching of materials
WO2020018804A1 (en) 2018-07-20 2020-01-23 Entegris, Inc. Cleaning composition with corrosion inhibitor
CN109161358A (en) * 2018-07-25 2019-01-08 佛山腾鲤新能源科技有限公司 A kind of preparation method of conducting resinl
US11017995B2 (en) * 2018-07-26 2021-05-25 Versum Materials Us, Llc Composition for TiN hard mask removal and etch residue cleaning
US11085011B2 (en) * 2018-08-28 2021-08-10 Entegris, Inc. Post CMP cleaning compositions for ceria particles
US10896824B2 (en) * 2018-12-14 2021-01-19 Tokyo Electron Limited Roughness reduction methods for materials using illuminated etch solutions
WO2020123126A1 (en) * 2018-12-14 2020-06-18 Entegris, Inc. Ruthenium etching composition and method
KR20210092834A (en) * 2018-12-14 2021-07-26 도쿄엘렉트론가부시키가이샤 Process Systems and Platforms for Reducing Roughness of Materials Using Illuminated Etching Solutions
CN109594088A (en) * 2018-12-29 2019-04-09 陕西宝成航空仪表有限责任公司 The stripping liquid and preparation method and obstacles in quit of titanium nitride or TiAlN film layer
KR20210111289A (en) * 2019-01-11 2021-09-10 버슘머트리얼즈 유에스, 엘엘씨 Hafnium oxide corrosion inhibitor
US20200248075A1 (en) * 2019-01-31 2020-08-06 Fujifilm Electronic Materials U.S.A., Inc. Etching compositions
CN113439326A (en) * 2019-02-13 2021-09-24 株式会社德山 Semiconductor wafer processing solution containing hypochlorite ions and pH buffer
US11955341B2 (en) 2019-03-11 2024-04-09 Versum Materials Us, Llc Etching solution and method for selectively removing silicon nitride during manufacture of a semiconductor device
WO2020185745A1 (en) * 2019-03-11 2020-09-17 Versum Materials Us, Llc Etching solution and method for aluminum nitride
US20220135914A1 (en) * 2019-03-14 2022-05-05 Nissan Chemical Corporation Cleaning agent composition and cleaning method
US11312922B2 (en) 2019-04-12 2022-04-26 Ecolab Usa Inc. Antimicrobial multi-purpose cleaner comprising a sulfonic acid-containing surfactant and methods of making and using the same
US20220220421A1 (en) 2019-05-23 2022-07-14 Basf Se Composition and process for electively etching a hard mask and/or an etch-stop layer in the presence of layers of low-k materials, copper, cobalt and/or tungsten
TWI795572B (en) * 2019-06-12 2023-03-11 關東鑫林科技股份有限公司 Etching composition
JPWO2021005980A1 (en) * 2019-07-05 2021-01-14
KR20210028447A (en) * 2019-09-04 2021-03-12 에스케이이노베이션 주식회사 Etching composition, method for etching insulating layer of semiconductor devices using the same and method for preparing semiconductor devices
JP2022547312A (en) * 2019-09-10 2022-11-11 フジフイルム エレクトロニック マテリアルズ ユー．エス．エー．， インコーポレイテッド etching composition
CN114514598A (en) 2019-09-27 2022-05-17 株式会社德山 RuO4Gas generation inhibitor and RuO4Method for suppressing gas generation
WO2021059666A1 (en) 2019-09-27 2021-04-01 株式会社トクヤマ Semiconductor treatment liquid for ruthenium and method for producing same
KR20210092472A (en) 2020-01-16 2021-07-26 동우 화인켐 주식회사 A molybdenum etchant composition and a pattern formation method using the same
KR20210100923A (en) 2020-02-07 2021-08-18 동우 화인켐 주식회사 A metal layer etchant composition and a pattern formation method using the same
JPWO2021176913A1 (en) * 2020-03-04 2021-09-10
TW202134477A (en) * 2020-03-04 2021-09-16 美商慧盛材料美國責任有限公司 Etching solution for titanium nitride and molybdenum conductive metal lines
CN113430066B (en) * 2020-03-23 2024-04-19 上海新阳半导体材料股份有限公司 Cleaning composition for selectively removing hard mask, preparation method and application thereof
CN113430072B (en) * 2020-03-23 2024-05-07 上海新阳半导体材料股份有限公司 Cobalt-compatible semi-aqueous cleaning solution for removing hard mask, preparation method and application thereof
KR102339685B1 (en) * 2020-03-25 2021-12-16 주식회사 이엔에프테크놀로지 Silicon nitride layer etching composition
CN115428129A (en) * 2020-04-14 2022-12-02 三菱瓦斯化学株式会社 Etching solution for titanium and/or titanium alloy, method for etching titanium and/or titanium alloy using same, and method for producing substrate using same
CN111430799B (en) * 2020-04-22 2023-02-14 上海纳米技术及应用国家工程研究中心有限公司 High-voltage electrolyte for lithium nickel manganese oxide positive electrode material
CN111850564A (en) * 2020-07-16 2020-10-30 桂林理工大学 Titanium compound film deplating solution and deplating method
US20220298416A1 (en) * 2020-08-07 2022-09-22 Tokuyama Corporation Treatment liquid for semiconductor wafers
EP4196546A1 (en) * 2020-08-13 2023-06-21 Entegris, Inc. Nitride etchant composition and method
TWI824299B (en) * 2020-09-22 2023-12-01 美商恩特葛瑞斯股份有限公司 Etchant compositions
JPWO2022071069A1 (en) * 2020-09-29 2022-04-07
CN112540515B (en) * 2020-12-16 2023-11-21 江苏艾森半导体材料股份有限公司 Photoresist photoresist stripping solution and preparation method and application thereof
CN113161234B (en) * 2021-04-27 2023-02-17 上海新阳半导体材料股份有限公司 Application of fluorine-containing cleaning liquid composition
CN113186043B (en) * 2021-04-27 2023-05-30 上海新阳半导体材料股份有限公司 Fluorine-containing cleaning fluid composition and application thereof
CN113150884B (en) * 2021-04-27 2022-12-30 上海新阳半导体材料股份有限公司 Preparation method of fluorine-containing cleaning liquid composition
EP4337744A1 (en) * 2021-05-12 2024-03-20 Entegris, Inc. Selective etchant compositions and methods
CN113549462A (en) * 2021-06-16 2021-10-26 江阴润玛电子材料股份有限公司 Ultrapure ammonium fluoride etching solution for microelectronics and preparation method thereof
JP2023043419A (en) * 2021-09-16 2023-03-29 株式会社Ｓｃｒｅｅｎホールディングス Substrate processing method and substrate processing apparatus
CN114369462A (en) * 2021-12-16 2022-04-19 湖北兴福电子材料有限公司 Etching solution for selectively etching titanium nitride and tungsten
TW202342700A (en) * 2022-04-20 2023-11-01 日商東京應化工業股份有限公司 Etching composition, etching method using the same and method for manufacturing electronic parts containing at least one of alkali compounds, organic solvents, water, chelating agents and surfactants
CN115011347B (en) * 2022-06-30 2023-12-29 湖北兴福电子材料股份有限公司 Selective etching solution for aluminum nitride and tungsten
CN114989825B (en) * 2022-06-30 2023-07-11 湖北兴福电子材料股份有限公司 Scandium-doped aluminum nitride and tungsten selective etching solution
CN115044376B (en) * 2022-06-30 2023-12-29 湖北兴福电子材料股份有限公司 Scandium-doped aluminum nitride etching solution and application thereof
WO2024004980A1 (en) * 2022-07-01 2024-01-04 三菱瓦斯化学株式会社 Semiconductor substrate cleaning composition, method for cleaning semiconductor substrates, and method for producing semiconductor substrates
CN115710536B (en) * 2022-11-11 2024-03-08 上海新阳半导体材料股份有限公司 Preparation method of cleaning liquid

Family Cites Families (162)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SE457647B (en) 1987-06-24 1989-01-16 Eka Nobel Ab SEATED WHITE MATERIAL WITH DITIONITE SOLUTION
US5209858A (en) 1991-02-06 1993-05-11 E. I. Du Pont De Nemours And Company Stabilization of choline and its derivatives against discoloration
US5320709A (en) 1993-02-24 1994-06-14 Advanced Chemical Systems International Incorporated Method for selective removal of organometallic and organosilicon residues and damaged oxides using anhydrous ammonium fluoride solution
EP0811083B1 (en) 1995-12-19 2000-05-31 FSI International Electroless deposition of metal films with spray processor
US5702075A (en) 1996-01-31 1997-12-30 David Lehrman Automatically collapsible support for an electrical cord for use with an ironing board
ES2160892T3 (en) * 1996-05-30 2001-11-16 Nalco Chemical Co USE OF A TENSIOACTIVE MIX TO INHIBIT CORROSION.
US6323168B1 (en) 1996-07-03 2001-11-27 Advanced Technology Materials, Inc. Post plasma ashing wafer cleaning formulation
US7534752B2 (en) 1996-07-03 2009-05-19 Advanced Technology Materials, Inc. Post plasma ashing wafer cleaning formulation
US6896826B2 (en) 1997-01-09 2005-05-24 Advanced Technology Materials, Inc. Aqueous cleaning composition containing copper-specific corrosion inhibitor for cleaning inorganic residues on semiconductor substrate
US6755989B2 (en) 1997-01-09 2004-06-29 Advanced Technology Materials, Inc. Aqueous cleaning composition containing copper-specific corrosion inhibitor for cleaning inorganic residues on semiconductor substrate
US6224785B1 (en) 1997-08-29 2001-05-01 Advanced Technology Materials, Inc. Aqueous ammonium fluoride and amine containing compositions for cleaning inorganic residues on semiconductor substrates
US5993685A (en) 1997-04-02 1999-11-30 Advanced Technology Materials Planarization composition for removing metal films
WO1998048453A1 (en) 1997-04-23 1998-10-29 Advanced Chemical Systems International, Inc. Planarization compositions for cmp of interlayer dielectrics
US5976928A (en) 1997-11-20 1999-11-02 Advanced Technology Materials, Inc. Chemical mechanical polishing of FeRAM capacitors
US6346741B1 (en) 1997-11-20 2002-02-12 Advanced Technology Materials, Inc. Compositions and structures for chemical mechanical polishing of FeRAM capacitors and method of fabricating FeRAM capacitors using same
US6280651B1 (en) 1998-12-16 2001-08-28 Advanced Technology Materials, Inc. Selective silicon oxide etchant formulation including fluoride salt, chelating agent, and glycol solvent
US6211126B1 (en) 1997-12-23 2001-04-03 Advanced Technology Materials, Inc. Formulations including a 1, 3-dicarbonyl compound chelating agent for stripping residues from semiconductor substrates
JP4226216B2 (en) 1998-05-18 2009-02-18 アドバンスド テクノロジー マテリアルズ，インコーポレイテッド Stripping composition for semiconductor substrate
US6875733B1 (en) 1998-10-14 2005-04-05 Advanced Technology Materials, Inc. Ammonium borate containing compositions for stripping residues from semiconductor substrates
US6395194B1 (en) 1998-12-18 2002-05-28 Intersurface Dynamics Inc. Chemical mechanical polishing compositions, and process for the CMP removal of iridium thin using same
US6419554B2 (en) 1999-06-24 2002-07-16 Micron Technology, Inc. Fixed abrasive chemical-mechanical planarization of titanium nitride
US6344432B1 (en) 1999-08-20 2002-02-05 Advanced Technology Materials, Inc. Formulations including a 1,3-dicarbonyl compound chelating agent and copper corrosion inhibiting agents for stripping residues from semiconductor substrates containing copper structures
US6439986B1 (en) 1999-10-12 2002-08-27 Hunatech Co., Ltd. Conditioner for polishing pad and method for manufacturing the same
JP2001135601A (en) 1999-11-09 2001-05-18 Speedfam Co Ltd Polishing method for planalizing semiconductor device
US6492308B1 (en) 1999-11-16 2002-12-10 Esc, Inc. Post chemical-mechanical planarization (CMP) cleaning composition
US6723691B2 (en) 1999-11-16 2004-04-20 Advanced Technology Materials, Inc. Post chemical-mechanical planarization (CMP) cleaning composition
US6194366B1 (en) 1999-11-16 2001-02-27 Esc, Inc. Post chemical-mechanical planarization (CMP) cleaning composition
JP3515041B2 (en) * 2000-03-13 2004-04-05 沖電気工業株式会社 Method for manufacturing semiconductor device
US6409781B1 (en) 2000-05-01 2002-06-25 Advanced Technology Materials, Inc. Polishing slurries for copper and associated materials
US6566315B2 (en) 2000-12-08 2003-05-20 Advanced Technology Materials, Inc. Formulations including a 1,3-dicarbonyl compound chelating agent and copper corrosion inhibiting agents for stripping residues from semiconductor substrates containing copper structures
JP2002231666A (en) 2001-01-31 2002-08-16 Fujimi Inc Composition for polishing, and polishing method using the composition
US6627587B2 (en) 2001-04-19 2003-09-30 Esc Inc. Cleaning compositions
US7029373B2 (en) 2001-08-14 2006-04-18 Advanced Technology Materials, Inc. Chemical mechanical polishing compositions for metal and associated materials and method of using same
US6800218B2 (en) 2001-08-23 2004-10-05 Advanced Technology Materials, Inc. Abrasive free formulations for chemical mechanical polishing of copper and associated materials and method of using same
US6802983B2 (en) 2001-09-17 2004-10-12 Advanced Technology Materials, Inc. Preparation of high performance silica slurry using a centrifuge
US7119418B2 (en) 2001-12-31 2006-10-10 Advanced Technology Materials, Inc. Supercritical fluid-assisted deposition of materials on semiconductor substrates
US7030168B2 (en) 2001-12-31 2006-04-18 Advanced Technology Materials, Inc. Supercritical fluid-assisted deposition of materials on semiconductor substrates
US7326673B2 (en) 2001-12-31 2008-02-05 Advanced Technology Materials, Inc. Treatment of semiconductor substrates using long-chain organothiols or long-chain acetates
US7557073B2 (en) 2001-12-31 2009-07-07 Advanced Technology Materials, Inc. Non-fluoride containing supercritical fluid composition for removal of ion-implant photoresist
US6773873B2 (en) 2002-03-25 2004-08-10 Advanced Technology Materials, Inc. pH buffered compositions useful for cleaning residue from semiconductor substrates
US7188644B2 (en) 2002-05-03 2007-03-13 Advanced Technology Materials, Inc. Apparatus and method for minimizing the generation of particles in ultrapure liquids
US6698619B2 (en) 2002-05-03 2004-03-02 Advanced Technology Materials, Inc. Returnable and reusable, bag-in-drum fluid storage and dispensing container system
US6849200B2 (en) 2002-07-23 2005-02-01 Advanced Technology Materials, Inc. Composition and process for wet stripping removal of sacrificial anti-reflective material
US7011716B2 (en) 2003-04-29 2006-03-14 Advanced Technology Materials, Inc. Compositions and methods for drying patterned wafers during manufacture of integrated circuitry products
US7485611B2 (en) 2002-10-31 2009-02-03 Advanced Technology Materials, Inc. Supercritical fluid-based cleaning compositions and methods
US6989358B2 (en) 2002-10-31 2006-01-24 Advanced Technology Materials, Inc. Supercritical carbon dioxide/chemical formulation for removal of photoresists
US6943139B2 (en) 2002-10-31 2005-09-13 Advanced Technology Materials, Inc. Removal of particle contamination on patterned silicon/silicon dioxide using supercritical carbon dioxide/chemical formulations
US20060019850A1 (en) 2002-10-31 2006-01-26 Korzenski Michael B Removal of particle contamination on a patterned silicon/silicon dioxide using dense fluid/chemical formulations
US7223352B2 (en) 2002-10-31 2007-05-29 Advanced Technology Materials, Inc. Supercritical carbon dioxide/chemical formulation for ashed and unashed aluminum post-etch residue removal
US7300601B2 (en) 2002-12-10 2007-11-27 Advanced Technology Materials, Inc. Passivative chemical mechanical polishing composition for copper film planarization
US8236485B2 (en) * 2002-12-20 2012-08-07 Advanced Technology Materials, Inc. Photoresist removal
US6735978B1 (en) 2003-02-11 2004-05-18 Advanced Technology Materials, Inc. Treatment of supercritical fluid utilized in semiconductor manufacturing applications
US7736405B2 (en) 2003-05-12 2010-06-15 Advanced Technology Materials, Inc. Chemical mechanical polishing compositions for copper and associated materials and method of using same
WO2004101222A2 (en) * 2003-05-12 2004-11-25 Advanced Technology Materials, Inc. Chemical mechanical polishing compositions for step-ii copper liner and other associated materials and method of using same
US7119052B2 (en) 2003-06-24 2006-10-10 Advanced Technology Materials, Inc. Compositions and methods for high-efficiency cleaning/polishing of semiconductor wafers
US20050025973A1 (en) 2003-07-25 2005-02-03 Slutz David E. CVD diamond-coated composite substrate containing a carbide-forming material and ceramic phases and method for making same
US7335239B2 (en) 2003-11-17 2008-02-26 Advanced Technology Materials, Inc. Chemical mechanical planarization pad
US20050118832A1 (en) 2003-12-01 2005-06-02 Korzenski Michael B. Removal of MEMS sacrificial layers using supercritical fluid/chemical formulations
JP2007519942A (en) 2003-12-02 2007-07-19 アドバンスド テクノロジー マテリアルズ，インコーポレイテッド Chemicals and methods for stripping resist, BARC, and gap fill materials
US20050145311A1 (en) 2003-12-30 2005-07-07 Walker Elizabeth L. Method for monitoring surface treatment of copper containing devices
CN101833251B (en) * 2004-02-11 2013-11-13 安万托特性材料股份有限公司 Microelectronic cleaning composition containing halogen oxygen acids, salts and derivatives thereof
US7553803B2 (en) 2004-03-01 2009-06-30 Advanced Technology Materials, Inc. Enhancement of silicon-containing particulate material removal using supercritical fluid-based compositions
US8338087B2 (en) 2004-03-03 2012-12-25 Advanced Technology Materials, Inc Composition and process for post-etch removal of photoresist and/or sacrificial anti-reflective material deposited on a substrate
US20050227482A1 (en) 2004-03-24 2005-10-13 Korzenski Michael B Composition useful for removal of bottom anti-reflection coatings from patterned ion-implanted photoresist wafers
CA2573213A1 (en) 2004-07-09 2006-01-19 Akzo Nobel N.V. Composition comprising choline hydroxide and process for preparing the same
JP4145273B2 (en) 2004-07-14 2008-09-03 株式会社ノリタケスーパーアブレーシブ CMP pad conditioner
US20060063687A1 (en) 2004-09-17 2006-03-23 Minsek David W Composition and process for ashless removal of post-etch photoresist and/or bottom anti-reflective material on a substrate
US20060148666A1 (en) 2004-12-30 2006-07-06 Advanced Technology Materials Inc. Aqueous cleaner with low metal etch rate
US20060154186A1 (en) 2005-01-07 2006-07-13 Advanced Technology Materials, Inc. Composition useful for removal of post-etch photoresist and bottom anti-reflection coatings
US7923423B2 (en) 2005-01-27 2011-04-12 Advanced Technology Materials, Inc. Compositions for processing of semiconductor substrates
US7365045B2 (en) 2005-03-30 2008-04-29 Advanced Tehnology Materials, Inc. Aqueous cleaner with low metal etch rate comprising alkanolamine and tetraalkylammonium hydroxide
KR20080023214A (en) * 2005-04-08 2008-03-12 사켐,인코포레이티드 Selective wet etching of metal nitrides
WO2006110645A2 (en) 2005-04-11 2006-10-19 Advanced Technology Materials, Inc. Fluoride liquid cleaners with polar and non-polar solvent mixtures for cleaning low-k-containing microelectronic devices
CN101198416A (en) 2005-04-15 2008-06-11 高级技术材料公司 Formulations for cleaning ion-implanted photoresist layers from microelectronic devices
US20070251551A1 (en) 2005-04-15 2007-11-01 Korzenski Michael B Removal of high-dose ion-implanted photoresist using self-assembled monolayers in solvent systems
TW200726858A (en) 2005-04-15 2007-07-16 Advanced Tech Materials Apparatus and method for supercritical fluid removal or deposition processes
WO2006127885A1 (en) 2005-05-26 2006-11-30 Advanced Technology Materials, Inc. Copper passivating post-chemical mechanical polishing cleaning composition and method of use
US20090215269A1 (en) 2005-06-06 2009-08-27 Advanced Technology Materials Inc. Integrated chemical mechanical polishing composition and process for single platen processing
CN101233456B (en) 2005-06-07 2013-01-02 高级技术材料公司 Metal and dielectric compatible sacrificial anti-reflective coating cleaning and removal composition
TW200709294A (en) 2005-06-13 2007-03-01 Advanced Tech Materials Compositions and methods for selective removal of metal or metal alloy after metal silicide formation
KR20080023346A (en) 2005-06-16 2008-03-13 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 Dense fluid compositions for removal of hardened photoresist, post-etch residue and/or bottom anti-reflective coating layers
CN101356628B (en) 2005-08-05 2012-01-04 高级技术材料公司 High throughput chemical mechanical polishing composition for metal film planarization
KR100685738B1 (en) * 2005-08-08 2007-02-26 삼성전자주식회사 Removing composition for an insulation material, method of removing an insulation layer and method of recycling a substrate using the same
WO2007027522A2 (en) 2005-08-29 2007-03-08 Advanced Technology Materials, Inc. Composition and method for removing thick film photoresist
KR20080059429A (en) 2005-10-05 2008-06-27 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 Composition and method for selectively etching gate spacer oxide material
KR101444468B1 (en) 2005-10-05 2014-10-30 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 Oxidizing aqueous cleaner for the removal of post-etch residues
WO2007047365A2 (en) 2005-10-13 2007-04-26 Advanced Technology Materials, Inc. Metals compatible photoresist and/or sacrificial antireflective coating removal composition
WO2007120259A2 (en) 2005-11-08 2007-10-25 Advanced Technology Materials, Inc. Formulations for removing copper-containing post-etch residue from microelectronic devices
CN101356629B (en) 2005-11-09 2012-06-06 高级技术材料公司 Composition and method for recycling semiconductor wafers having low-K dielectric materials thereon
TW200734448A (en) 2006-02-03 2007-09-16 Advanced Tech Materials Low pH post-CMP residue removal composition and method of use
US20070225186A1 (en) * 2006-03-27 2007-09-27 Matthew Fisher Alkaline solutions for post CMP cleaning processes
WO2008036823A2 (en) 2006-09-21 2008-03-27 Advanced Technology Materials, Inc. Uric acid additive for cleaning formulations
US8685909B2 (en) 2006-09-21 2014-04-01 Advanced Technology Materials, Inc. Antioxidants for post-CMP cleaning formulations
US20080076688A1 (en) 2006-09-21 2008-03-27 Barnes Jeffrey A Copper passivating post-chemical mechanical polishing cleaning composition and method of use
SG175559A1 (en) 2006-09-25 2011-11-28 Advanced Tech Materials Compositions and methods for the removal of photoresist for a wafer rework application
US20080125342A1 (en) * 2006-11-07 2008-05-29 Advanced Technology Materials, Inc. Formulations for cleaning memory device structures
US8778210B2 (en) 2006-12-21 2014-07-15 Advanced Technology Materials, Inc. Compositions and methods for the selective removal of silicon nitride
WO2008080097A2 (en) * 2006-12-21 2008-07-03 Advanced Technology Materials, Inc. Liquid cleaner for the removal of post-etch residues
JP2008177180A (en) * 2007-01-16 2008-07-31 Ebara Corp Preprocessing solution for polishing wiring substrate, polishing method, process and apparatus for manufacturing wiring substrate
TW200916564A (en) 2007-01-31 2009-04-16 Advanced Tech Materials Stabilization of polymer-silica dispersions for chemical mechanical polishing slurry applications
KR101344541B1 (en) 2007-02-02 2013-12-26 동우 화인켐 주식회사 Composition of Selective Etching solutions For Silicon Oxide Film
TWI516573B (en) 2007-02-06 2016-01-11 安堤格里斯公司 Composition and process for the selective removal of tisin
US20100112728A1 (en) * 2007-03-31 2010-05-06 Advanced Technology Materials, Inc. Methods for stripping material for wafer reclamation
EP2155373A4 (en) 2007-05-09 2014-10-22 Foresight Proc Llc Systems and methods for material blending and distribution
TW200918664A (en) * 2007-06-13 2009-05-01 Advanced Tech Materials Wafer reclamation compositions and methods
US20100261632A1 (en) 2007-08-02 2010-10-14 Advanced Technology Materials, Inc. Non-fluoride containing composition for the removal of residue from a microelectronic device
JP2010541192A (en) 2007-08-20 2010-12-24 アドバンスド テクノロジー マテリアルズ，インコーポレイテッド Compositions and methods for removing ion-implanted photoresist
JP2009075285A (en) * 2007-09-20 2009-04-09 Fujifilm Corp Stripper for semiconductor device and stripping method
EP2227319A2 (en) 2007-11-14 2010-09-15 Advanced Technology Materials, Inc. Solvent-free synthesis of soluble nanocrystals
TW200934865A (en) 2007-11-30 2009-08-16 Advanced Tech Materials Formulations for cleaning memory device structures
SG188848A1 (en) 2008-03-07 2013-04-30 Advanced Tech Materials Non-selective oxide etch wet clean composition and method of use
US20090253072A1 (en) 2008-04-01 2009-10-08 Petruska Melissa A Nanoparticle reversible contrast enhancement material and method
EP2288965A4 (en) 2008-05-01 2011-08-10 Advanced Tech Materials Low ph mixtures for the removal of high density implanted resist
CN102216854A (en) 2008-08-04 2011-10-12 高级技术材料公司 Environmentally friendly polymer stripping compositions
KR20110063845A (en) 2008-10-02 2011-06-14 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 Use of surfactant/defoamer mixtures for enhanced metals loading and surface passivation of silicon substrates
KR101752684B1 (en) * 2008-10-21 2017-07-04 엔테그리스, 아이엔씨. Copper cleaning and protection formulations
WO2010088194A2 (en) 2009-01-28 2010-08-05 Advanced Technology Materials, Inc. Lithographic tool in situ clean formulations
WO2010086745A1 (en) 2009-02-02 2010-08-05 Atmi Taiwan Co., Ltd. Method of etching lanthanum-containing oxide layers
WO2010091045A2 (en) 2009-02-05 2010-08-12 Advanced Technology Materials, Inc. Non-fluoride containing composition for the removal of polymers and other organic material from a surface
US8754021B2 (en) 2009-02-27 2014-06-17 Advanced Technology Materials, Inc. Non-amine post-CMP composition and method of use
US8367555B2 (en) 2009-12-11 2013-02-05 International Business Machines Corporation Removal of masking material
JP5858597B2 (en) 2010-01-29 2016-02-10 アドバンスド テクノロジー マテリアルズ，インコーポレイテッド Cleaning agent for tungsten wiring semiconductor
SG10201500387RA (en) 2010-01-29 2015-04-29 Entegris Inc Cleaning agent for semiconductor provided with metal wiring
JP5792284B2 (en) 2010-04-15 2015-10-07 アドバンスド テクノロジー マテリアルズ，インコーポレイテッド How to recycle an aged printed circuit board
JP2012021151A (en) 2010-06-16 2012-02-02 Sanyo Chem Ind Ltd Cleaning agent for copper wiring semiconductor
SG10201505535VA (en) * 2010-07-16 2015-09-29 Entegris Inc Aqueous cleaner for the removal of post-etch residues
JP6101421B2 (en) 2010-08-16 2017-03-22 インテグリス・インコーポレーテッド Etching solution for copper or copper alloy
TWI558818B (en) 2010-08-20 2016-11-21 恩特葛瑞斯股份有限公司 Sustainable process for reclaiming precious metals and base metals from e-waste
US20130280123A1 (en) 2010-08-27 2013-10-24 Advanced Technology Materials, Inc. Method for preventing the collapse of high aspect ratio structures during drying
SG10201508015RA (en) * 2010-10-06 2015-10-29 Entegris Inc Composition and process for selectively etching metal nitrides
KR101891363B1 (en) 2010-10-13 2018-08-24 엔테그리스, 아이엔씨. Composition for and method of suppressing titanium nitride corrosion
KR102064487B1 (en) 2011-01-13 2020-01-10 엔테그리스, 아이엔씨. Formulations for the removal of particles generated by cerium-containing solutions
JP2012186470A (en) 2011-02-18 2012-09-27 Sanyo Chem Ind Ltd Cleaner for copper wiring semiconductor
WO2012154498A2 (en) 2011-05-06 2012-11-15 Advanced Technology Materials, Inc. Removal of metal impurities from silicon surfaces for solar cell and semiconductor applications
JP2012251026A (en) 2011-05-31 2012-12-20 Sanyo Chem Ind Ltd Cleaning agent for semiconductor
WO2012174518A2 (en) 2011-06-16 2012-12-20 Advanced Technology Materials, Inc. Compositions and methods for selectively etching silicon nitride
SG10201605021PA (en) 2011-06-21 2016-08-30 Entegris Inc Method for the recovery of lithium cobalt oxide from lithium ion batteries
KR101776923B1 (en) 2011-08-05 2017-09-11 삼성디스플레이 주식회사 Etchant composition, method of forming a metal pattern using the etchant and method of manufacturing a display substrate
JP5933950B2 (en) 2011-09-30 2016-06-15 アドバンスド テクノロジー マテリアルズ，インコーポレイテッド Etching solution for copper or copper alloy
EP2768920A4 (en) 2011-10-21 2015-06-03 Advanced Tech Materials Non-amine post-cmp composition and method of use
US8618036B2 (en) 2011-11-14 2013-12-31 International Business Machines Corporation Aqueous cerium-containing solution having an extended bath lifetime for removing mask material
CA2855935A1 (en) 2011-11-22 2013-05-30 Taminco N.V. Stabilized choline solutions and methods for preparing the same
AP2014007781A0 (en) 2011-12-15 2014-07-31 Advanced Tech Materials Apparatus and method for stripping solder metals during the recycling of waste electrical and electronic equipment
US9546321B2 (en) * 2011-12-28 2017-01-17 Advanced Technology Materials, Inc. Compositions and methods for selectively etching titanium nitride
JP2015512971A (en) 2012-02-15 2015-04-30 インテグリス，インコーポレイテッド Post-CMP removal using composition and method of use
WO2013138278A1 (en) 2012-03-12 2013-09-19 Advanced Technology Materials, Inc. Copper cleaning and protection formulations
EP2826062A4 (en) 2012-03-12 2016-06-22 Entegris Inc Methods for the selective removal of ashed spin-on glass
WO2013142250A1 (en) 2012-03-18 2013-09-26 Advanced Technology Materials, Inc. Post-cmp formulation having improved barrier layer compatibility and cleaning performance
WO2013152260A1 (en) 2012-04-06 2013-10-10 Advanced Technology Materials, Inc. Removal of lead from solid materials
AU2013246183B2 (en) 2012-04-13 2017-03-16 Huntsman Petrochemical Llc Using novel amines to stabilize quaternary trialkylalkanolamines
US20130295712A1 (en) 2012-05-03 2013-11-07 Advanced Technology Materials, Inc. Methods of texturing surfaces for controlled reflection
WO2013170130A1 (en) 2012-05-11 2013-11-14 Advanced Technology Materials, Inc. Formulations for wet etching nipt during silicide fabrication
SG10201610541UA (en) 2012-05-18 2017-01-27 Entegris Inc Composition and process for stripping photoresist from a surface including titanium nitride
CN104395989A (en) 2012-05-18 2015-03-04 高级技术材料公司 Aqueous clean solution with low copper etch rate for organic residue removal improvement
JP6063206B2 (en) * 2012-10-22 2017-01-18 富士フイルム株式会社 Etching solution, etching method using the same, and semiconductor device manufacturing method
US9765288B2 (en) 2012-12-05 2017-09-19 Entegris, Inc. Compositions for cleaning III-V semiconductor materials and methods of using same
SG11201507014RA (en) 2013-03-04 2015-10-29 Advanced Tech Materials Compositions and methods for selectively etching titanium nitride
US9520617B2 (en) 2013-03-14 2016-12-13 Advanced Technology Materials, Inc. Sulfolane mixtures as ambient aprotic polar solvents
US20160075971A1 (en) 2013-04-22 2016-03-17 Advanced Technology Materials, Inc. Copper cleaning and protection formulations
US20160122696A1 (en) 2013-05-17 2016-05-05 Advanced Technology Materials, Inc. Compositions and methods for removing ceria particles from a surface
CN105683336A (en) 2013-06-06 2016-06-15 高级技术材料公司 Compositions and methods for selectively etching titanium nitride
EP3110982A4 (en) 2014-02-25 2017-11-22 Entegris, Inc. Wet based formulations for the selective removal of noble metals

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