TW200709294A - Compositions and methods for selective removal of metal or metal alloy after metal silicide formation - Google Patents

Compositions and methods for selective removal of metal or metal alloy after metal silicide formation

Info

Publication number
TW200709294A
TW200709294A TW095120894A TW95120894A TW200709294A TW 200709294 A TW200709294 A TW 200709294A TW 095120894 A TW095120894 A TW 095120894A TW 95120894 A TW95120894 A TW 95120894A TW 200709294 A TW200709294 A TW 200709294A
Authority
TW
Taiwan
Prior art keywords
metal
selective removal
composition
silicides
acid
Prior art date
Application number
TW095120894A
Other languages
Chinese (zh)
Inventor
David D Bernhard
wei-hua Wang
Thomas H Baum
Original Assignee
Advanced Tech Materials
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Tech Materials filed Critical Advanced Tech Materials
Publication of TW200709294A publication Critical patent/TW200709294A/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/30—Acidic compositions for etching other metallic material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/02—Local etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/26—Acidic compositions for etching refractory metals
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/28—Acidic compositions for etching iron group metals

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • ing And Chemical Polishing (AREA)
  • Weting (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

An aqueous metal etching composition useful for removal of metals such as nickel, cobalt, titanium, tungsten, and alloys thereof, after formation of metal silicides via rapid thermal annealing during complementary metal-oxide-semiconductor (CMOS) transistor fabrication. The aqueous metal etching composition is also useful for selective removal of metal silicides and/or metal mitrides for wafer re-work. In one formulation, the aqueous metal etching composition contains oxalic acid, and a chloride-containing compound, and in other formulations, the composition contains an oxidizer, such as hydrogen peroxide, and a fluoride source, e.g., borofluoric acid. The composition in another specific formulation contains borofluoric acid and boric acid for effective etching of nickel, cobalt, titanium, tungsten, metal alloys, metal silicides and metal nitrides, without attacking the dielectric and the substrate.
TW095120894A 2005-06-13 2006-06-13 Compositions and methods for selective removal of metal or metal alloy after metal silicide formation TW200709294A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US69011505P 2005-06-13 2005-06-13

Publications (1)

Publication Number Publication Date
TW200709294A true TW200709294A (en) 2007-03-01

Family

ID=37571015

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095120894A TW200709294A (en) 2005-06-13 2006-06-13 Compositions and methods for selective removal of metal or metal alloy after metal silicide formation

Country Status (8)

Country Link
US (1) US20090212021A1 (en)
EP (1) EP1894230A2 (en)
JP (1) JP2008547202A (en)
KR (1) KR20080015027A (en)
CN (1) CN101233601A (en)
IL (1) IL188082A0 (en)
TW (1) TW200709294A (en)
WO (1) WO2006138235A2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI654340B (en) 2013-12-16 2019-03-21 美商恩特葛瑞斯股份有限公司 Ni:NiGe:Ge SELECTIVE ETCH FORMULATIONS AND METHOD OF USING SAME
TWI674337B (en) * 2014-12-26 2019-10-11 日商富士軟片股份有限公司 Etching liquid, etching method using the same, and method for manufacturing semiconductor substrate product
TWI693305B (en) * 2017-09-29 2020-05-11 美商慧盛材料美國責任有限公司 Etching solution for simultaneously removing silicon and silicon-germanium alloy from a silicon-germanium/silicon stack during manufacture of a semiconductor device

Families Citing this family (90)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8211844B2 (en) * 2005-10-21 2012-07-03 Freescale Semiconductor, Inc. Method for cleaning a semiconductor structure and chemistry thereof
CN101356629B (en) 2005-11-09 2012-06-06 高级技术材料公司 Composition and method for recycling semiconductor wafers having low-K dielectric materials thereon
JP5286664B2 (en) * 2006-11-29 2013-09-11 富士通セミコンダクター株式会社 Manufacturing method of semiconductor device
US20100163788A1 (en) * 2006-12-21 2010-07-01 Advanced Technology Materials, Inc. Liquid cleaner for the removal of post-etch residues
TWI516573B (en) * 2007-02-06 2016-01-11 安堤格里斯公司 Composition and process for the selective removal of tisin
JP5559956B2 (en) * 2007-03-15 2014-07-23 東進セミケム株式会社 Etching solution composition for thin film transistor liquid crystal display device
US20100112728A1 (en) * 2007-03-31 2010-05-06 Advanced Technology Materials, Inc. Methods for stripping material for wafer reclamation
SG166102A1 (en) * 2007-03-31 2010-11-29 Advanced Tech Materials Methods for stripping material for wafer reclamation
US7670497B2 (en) * 2007-07-06 2010-03-02 International Business Machines Corporation Oxidant and passivant composition and method for use in treating a microelectronic structure
WO2009047203A1 (en) * 2007-10-08 2009-04-16 Basf Se ETCHANT COMPOSITIONS AND ETCHING METHOD FOR METALS Cu/Mo
BRPI0908905A2 (en) * 2008-02-29 2015-09-22 Mallinckrodt Baker Inc microelectronic substrate cleaning compositions
JP5561914B2 (en) * 2008-05-16 2014-07-30 関東化学株式会社 Semiconductor substrate cleaning liquid composition
KR101004506B1 (en) * 2008-09-09 2010-12-31 주식회사 하이닉스반도체 Spin Transfer Torque memory device having common source line and method of the same
KR101507592B1 (en) 2008-09-12 2015-04-06 주식회사 동진쎄미켐 Etchant composition for organic light emitting diode display device
KR20110063845A (en) * 2008-10-02 2011-06-14 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 Use of surfactant/defoamer mixtures for enhanced metals loading and surface passivation of silicon substrates
JP4903242B2 (en) * 2008-10-28 2012-03-28 アバントール パフォーマンス マテリアルズ， インコーポレイテッド Gluconic acid-containing photoresist cleaning composition for multi-metal device processing
JP5321168B2 (en) * 2009-03-16 2013-10-23 東ソー株式会社 Cleaning method for polished quartz glass substrate
EP2256549A1 (en) 2009-05-29 2010-12-01 Obducat AB Fabrication of Metallic Stamps for Replication Technology
JP5528734B2 (en) * 2009-07-09 2014-06-25 富士フイルム株式会社 ELECTRONIC DEVICE AND ITS MANUFACTURING METHOD, DISPLAY DEVICE, AND SENSOR
KR101146099B1 (en) * 2009-09-07 2012-05-16 솔브레인 주식회사 Etchant for thin film transistor-liquid crystal display
US20110151671A1 (en) * 2009-12-17 2011-06-23 Rohm And Haas Electronic Materials Llc method of texturing semiconductor substrates
CN102234513A (en) * 2010-04-20 2011-11-09 深圳富泰宏精密工业有限公司 Stripping solution for titanium-containing film and using method for stripping solution
KR101825493B1 (en) 2010-04-20 2018-02-06 삼성디스플레이 주식회사 Etchant for electrode and method of fabricating thin film transistor array panel using the same
EP2593964A4 (en) 2010-07-16 2017-12-06 Entegris Inc. Aqueous cleaner for the removal of post-etch residues
KR101388937B1 (en) * 2010-08-05 2014-04-24 쇼와 덴코 가부시키가이샤 Composition for removal of nickel-platinum alloy metal
JP6101421B2 (en) 2010-08-16 2017-03-22 インテグリス・インコーポレーテッド Etching solution for copper or copper alloy
EP2606158A4 (en) 2010-08-20 2017-04-26 Entegris Inc. Sustainable process for reclaiming precious metals and base metals from e-waste
KR101868319B1 (en) 2010-10-06 2018-06-15 엔테그리스, 아이엔씨. Composition and process for selectively etching metal nitrides
KR101891363B1 (en) 2010-10-13 2018-08-24 엔테그리스, 아이엔씨. Composition for and method of suppressing titanium nitride corrosion
KR20120067198A (en) * 2010-12-15 2012-06-25 제일모직주식회사 Etching paste and method for preparing thereof, method of forming a pattern using the same
KR102064487B1 (en) 2011-01-13 2020-01-10 엔테그리스, 아이엔씨. Formulations for the removal of particles generated by cerium-containing solutions
WO2012125401A1 (en) 2011-03-11 2012-09-20 Fujifilm Electronic Materials U.S.A., Inc. Novel etching composition
KR20120138290A (en) * 2011-06-14 2012-12-26 삼성디스플레이 주식회사 Etchant and fabrication method of metal wiring and thin film transistor substrate using the same
JP6051632B2 (en) * 2011-07-20 2016-12-27 日立化成株式会社 Abrasive and substrate polishing method
WO2013032047A1 (en) * 2011-08-31 2013-03-07 동우 화인켐 주식회사 Etchant liquid composition for a metal layer, including copper and titanium
JP5933950B2 (en) 2011-09-30 2016-06-15 アドバンスド テクノロジー マテリアルズ，インコーポレイテッド Etching solution for copper or copper alloy
TWI577834B (en) 2011-10-21 2017-04-11 富士軟片電子材料美國股份有限公司 Novel passivation composition and process
CN102496567B (en) * 2011-12-20 2013-10-16 中国科学院微电子研究所 III-V family semiconductor nickel metallization manufacture method
SG11201403556WA (en) 2011-12-28 2014-07-30 Advanced Tech Materials Compositions and methods for selectively etching titanium nitride
JP5798939B2 (en) * 2012-01-25 2015-10-21 富士フイルム株式会社 Etching method and etching solution used therefor
EP2626891A3 (en) * 2012-02-07 2018-01-24 Rohm and Haas Electronic Materials LLC Activation process to improve metal adhesion
US10176979B2 (en) 2012-02-15 2019-01-08 Entegris, Inc. Post-CMP removal using compositions and method of use
JP5935163B2 (en) * 2012-03-30 2016-06-15 ナガセケムテックス株式会社 Resist adhesion improver and copper wiring manufacturing method
SG10201610541UA (en) 2012-05-18 2017-01-27 Entegris Inc Composition and process for stripping photoresist from a surface including titanium nitride
KR101922625B1 (en) * 2012-07-03 2018-11-28 삼성디스플레이 주식회사 Etchant for metal wire and method for manufacturing metal wire using the same
US8603837B1 (en) * 2012-07-31 2013-12-10 Intermolecular, Inc. High productivity combinatorial workflow for post gate etch clean development
KR102002131B1 (en) * 2012-08-03 2019-07-22 삼성디스플레이 주식회사 Etchant composition and manufacturing method for thin film transistor using the same
US8709277B2 (en) 2012-09-10 2014-04-29 Fujifilm Corporation Etching composition
JP2014093407A (en) * 2012-11-02 2014-05-19 Fujifilm Corp Etchant, etching method using the same, and method of manufacturing semiconductor element
JP6017273B2 (en) * 2012-11-14 2016-10-26 富士フイルム株式会社 Semiconductor substrate etching method and semiconductor device manufacturing method
JP2014103179A (en) * 2012-11-16 2014-06-05 Fujifilm Corp Etchant for semiconductor substrate, etching method using the same, and method for manufacturing semiconductor element
JP6198384B2 (en) * 2012-11-28 2017-09-20 富士フイルム株式会社 Semiconductor substrate etching method and semiconductor device manufacturing method
US9765288B2 (en) * 2012-12-05 2017-09-19 Entegris, Inc. Compositions for cleaning III-V semiconductor materials and methods of using same
GB2508827A (en) * 2012-12-11 2014-06-18 Henkel Ag & Co Kgaa Aqueous compositions and processes for passivating and brightening stainless steel surfaces
JP6363116B2 (en) 2013-03-04 2018-07-25 インテグリス・インコーポレーテッド Compositions and methods for selectively etching titanium nitride
SG10201708364XA (en) 2013-06-06 2017-11-29 Entegris Inc Compositions and methods for selectively etching titanium nitride
CN103409753B (en) * 2013-07-23 2015-08-19 苏州羽帆新材料科技有限公司 Metal etchants and preparation method thereof
CN112442374A (en) 2013-07-31 2021-03-05 恩特格里斯公司 Aqueous formulations with Cu/W compatibility for removal of metal hardmask and post-etch residues
CN104425654B (en) * 2013-08-28 2017-08-25 上海晶玺电子科技有限公司 Engraving method
WO2015031620A1 (en) 2013-08-30 2015-03-05 Advanced Technology Materials, Inc. Compositions and methods for selectively etching titanium nitride
US20150087144A1 (en) * 2013-09-26 2015-03-26 Taiwan Semiconductor Manufacturing Company Ltd. Apparatus and method of manufacturing metal gate semiconductor device
EP3080240A4 (en) * 2013-12-11 2017-07-19 FujiFilm Electronic Materials USA, Inc. Cleaning formulation for removing residues on surfaces
SG10201805234YA (en) 2013-12-20 2018-08-30 Entegris Inc Use of non-oxidizing strong acids for the removal of ion-implanted resist
US9472420B2 (en) * 2013-12-20 2016-10-18 Air Products And Chemicals, Inc. Composition for titanium nitride hard mask and etch residue removal
CN103645187B (en) * 2013-12-31 2015-12-30 广州天至环保科技有限公司 A kind of test agent of online Fast nondestructive evaluation gold plate quality and using method
WO2015103146A1 (en) 2013-12-31 2015-07-09 Advanced Technology Materials, Inc. Formulations to selectively etch silicon and germanium
US20160340620A1 (en) 2014-01-29 2016-11-24 Advanced Technology Materials, Inc. Post chemical mechanical polishing formulations and method of use
WO2015119925A1 (en) 2014-02-05 2015-08-13 Advanced Technology Materials, Inc. Non-amine post-cmp compositions and method of use
US20150368557A1 (en) * 2014-06-23 2015-12-24 Hyosan Lee Metal etchant compositions and methods of fabricating a semiconductor device using the same
KR102218669B1 (en) * 2014-06-27 2021-02-22 동우 화인켐 주식회사 Etching solution composition for metal layer and manufacturing method of an array substrate for Liquid crystal display using the same
US9222018B1 (en) * 2014-07-24 2015-12-29 Air Products And Chemicals, Inc. Titanium nitride hard mask and etch residue removal
JP6121959B2 (en) * 2014-09-11 2017-04-26 株式会社東芝 Etching method, article and semiconductor device manufacturing method, and etching solution
US20160163551A1 (en) * 2014-12-04 2016-06-09 Globalfoundries Inc. Methods of forming metal silicide regions on semiconductor devices using an organic chelating material during a metal etch process
KR102247235B1 (en) * 2015-01-26 2021-05-03 동우 화인켐 주식회사 Etching composition for a titanium layer
KR102360224B1 (en) * 2015-02-16 2022-03-14 삼성디스플레이 주식회사 Cleaning composition
JP6369989B2 (en) * 2015-02-23 2018-08-08 富士フイルム株式会社 Etching solution, etching method, and method for manufacturing semiconductor substrate product
KR102397090B1 (en) 2017-07-13 2022-05-12 동우 화인켐 주식회사 Composition for removal of Ni and TiN
US10879076B2 (en) * 2017-08-25 2020-12-29 Versum Materials Us, Llc Etching solution for selectively removing silicon-germanium alloy from a silicon-germanium/silicon stack during manufacture of a semiconductor device
CN108193206B (en) * 2017-12-28 2019-09-27 北京钢研新冶工程设计有限公司 A kind of nickel stripper, preparation method and application method
SG11202006176YA (en) * 2018-01-12 2020-07-29 Fujifilm Corp Chemical solution and method for treating substrate
JP7301055B2 (en) 2018-09-06 2023-06-30 富士フイルム株式会社 Chemical solution, substrate processing method
CN109111925A (en) * 2018-09-20 2019-01-01 绵阳致知高新科技有限责任公司 A kind of wet etching method of etchant and its tantalum nitride membrane
CN115651656A (en) * 2018-12-03 2023-01-31 富士胶片电子材料美国有限公司 Etching composition
CN113439326A (en) * 2019-02-13 2021-09-24 株式会社德山 Semiconductor wafer processing solution containing hypochlorite ions and pH buffer
SG11202111994PA (en) * 2019-05-01 2021-11-29 Fujifilm Electronic Materials U S A Inc Etching compositions
EP3983500A4 (en) * 2019-06-13 2022-11-02 FUJIFILM Electronic Materials U.S.A, Inc. Etching compositions
EP3825441A1 (en) * 2019-11-21 2021-05-26 COVENTYA S.p.A. An electrolytic treatment device for preparing plastic parts to be metallized and a method for etching plastic parts
KR20210100258A (en) 2020-02-05 2021-08-17 삼성전자주식회사 Etching composition and method for manufacturing semiconductor device using the same
CN115110139A (en) * 2021-03-19 2022-09-27 富联裕展科技(深圳)有限公司 Titanium alloy workpiece, shell, preparation method of titanium alloy workpiece and etching solution
CN114293056B (en) * 2021-12-20 2022-12-23 富联裕展科技(深圳)有限公司 Metal workpiece, metal product, etching solution and method for manufacturing metal workpiece

Family Cites Families (51)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57164984A (en) * 1981-04-06 1982-10-09 Metsuku Kk Exfoliating solution for tin or tin alloy
US5320709A (en) * 1993-02-24 1994-06-14 Advanced Chemical Systems International Incorporated Method for selective removal of organometallic and organosilicon residues and damaged oxides using anhydrous ammonium fluoride solution
US5800726A (en) * 1995-07-26 1998-09-01 International Business Machines Corporation Selective chemical etching in microelectronics fabrication
US7534752B2 (en) * 1996-07-03 2009-05-19 Advanced Technology Materials, Inc. Post plasma ashing wafer cleaning formulation
US5698503A (en) * 1996-11-08 1997-12-16 Ashland Inc. Stripping and cleaning composition
US6896826B2 (en) * 1997-01-09 2005-05-24 Advanced Technology Materials, Inc. Aqueous cleaning composition containing copper-specific corrosion inhibitor for cleaning inorganic residues on semiconductor substrate
US6194317B1 (en) * 1998-04-30 2001-02-27 3M Innovative Properties Company Method of planarizing the upper surface of a semiconductor wafer
DE19880534C2 (en) * 1997-06-16 2002-10-10 Mitsubishi Materials Corp Process for cleaning precious metals
US6033993A (en) * 1997-09-23 2000-03-07 Olin Microelectronic Chemicals, Inc. Process for removing residues from a semiconductor substrate
US6331490B1 (en) * 1998-03-13 2001-12-18 Semitool, Inc. Process for etching thin-film layers of a workpiece used to form microelectric circuits or components
EP1125168A1 (en) * 1998-05-18 2001-08-22 Advanced Technology Materials, Inc. Stripping compositions for semiconductor substrates
JP2002528903A (en) * 1998-10-23 2002-09-03 アーチ・スペシャルティ・ケミカルズ・インコーポレイテッド Slurry system containing activator solution for chemical mechanical polishing
KR100472882B1 (en) * 1999-01-18 2005-03-07 가부시끼가이샤 도시바 Aqueous Dispersion, Chemical Mechanical Polishing Aqueous Dispersion Composition, Wafer Surface Polishing Process and Manufacturing Process of a Semiconductor Apparatus
KR100447552B1 (en) * 1999-03-18 2004-09-08 가부시끼가이샤 도시바 Aqueous Dispersion, Aqueous Dispersion for Chemical Mechanical Polishing Used for Manufacture of Semiconductor Devices, Method for Manufacture of Semiconductor Devices, and Method for Formation of Embedded Wiring
JP3974305B2 (en) * 1999-06-18 2007-09-12 エルジー フィリップス エルシーディー カンパニー リミテッド Etching agent, method for manufacturing electronic device substrate using the same, and electronic device
DE19937503C1 (en) * 1999-08-09 2001-01-04 Siemens Ag Etching oxide films of a ferroelectric bismuth-containing mixed oxide comprises applying an oxide film to a substrate, contacting with an etching solution, and removing the etching solution
US6361712B1 (en) * 1999-10-15 2002-03-26 Arch Specialty Chemicals, Inc. Composition for selective etching of oxides over metals
US6413923B2 (en) * 1999-11-15 2002-07-02 Arch Specialty Chemicals, Inc. Non-corrosive cleaning composition for removing plasma etching residues
US6194366B1 (en) * 1999-11-16 2001-02-27 Esc, Inc. Post chemical-mechanical planarization (CMP) cleaning composition
US6492308B1 (en) * 1999-11-16 2002-12-10 Esc, Inc. Post chemical-mechanical planarization (CMP) cleaning composition
US6723691B2 (en) * 1999-11-16 2004-04-20 Advanced Technology Materials, Inc. Post chemical-mechanical planarization (CMP) cleaning composition
US6465404B2 (en) * 2000-03-21 2002-10-15 Bbj Environmental Solutions, Inc. Aqueous cleaning composition with controlled PH
US6486108B1 (en) * 2000-05-31 2002-11-26 Micron Technology, Inc. Cleaning composition useful in semiconductor integrated circuit fabrication
US7001252B2 (en) * 2000-05-31 2006-02-21 Jsr Corporation Abrasive material
JP3837277B2 (en) * 2000-06-30 2006-10-25 株式会社東芝 Chemical mechanical polishing aqueous dispersion for use in polishing copper and chemical mechanical polishing method
US6936541B2 (en) * 2000-09-20 2005-08-30 Rohn And Haas Electronic Materials Cmp Holdings, Inc. Method for planarizing metal interconnects
US6362095B1 (en) * 2000-10-05 2002-03-26 Advanced Micro Devices, Inc. Nickel silicide stripping after nickel silicide formation
US6461227B1 (en) * 2000-10-17 2002-10-08 Cabot Microelectronics Corporation Method of polishing a memory or rigid disk with an ammonia-and/or halide-containing composition
JP2002226974A (en) * 2000-11-28 2002-08-14 Ebara Corp ELECTROLESS Ni-B PLATING SOLUTION, ELECTRONIC DEVICE, AND MANUFACTURING METHOD THEREOF
KR100798437B1 (en) * 2000-12-04 2008-01-28 가부시키가이샤 에바라 세이사꾸쇼 Substrate processing method
US6566315B2 (en) * 2000-12-08 2003-05-20 Advanced Technology Materials, Inc. Formulations including a 1,3-dicarbonyl compound chelating agent and copper corrosion inhibiting agents for stripping residues from semiconductor substrates containing copper structures
US20020119245A1 (en) * 2001-02-23 2002-08-29 Steven Verhaverbeke Method for etching electronic components containing tantalum
US6627587B2 (en) * 2001-04-19 2003-09-30 Esc Inc. Cleaning compositions
US6642199B2 (en) * 2001-04-19 2003-11-04 Hubbard-Hall, Inc. Composition for stripping nickel from substrates and process
WO2002094462A1 (en) * 2001-05-22 2002-11-28 Mitsubishi Chemical Corporation Method for cleaning surface of substrate
JP2003188254A (en) * 2001-12-18 2003-07-04 Hitachi Ltd Semiconductor device and manufacturing method therefor
US6773873B2 (en) * 2002-03-25 2004-08-10 Advanced Technology Materials, Inc. pH buffered compositions useful for cleaning residue from semiconductor substrates
JP2003332426A (en) * 2002-05-17 2003-11-21 Renesas Technology Corp Method for manufacturing semiconductor device and semiconductor device
US6849200B2 (en) * 2002-07-23 2005-02-01 Advanced Technology Materials, Inc. Composition and process for wet stripping removal of sacrificial anti-reflective material
GB2395486B (en) * 2002-10-30 2006-08-16 Kao Corp Polishing composition
US8236485B2 (en) * 2002-12-20 2012-08-07 Advanced Technology Materials, Inc. Photoresist removal
JP4267331B2 (en) * 2003-01-14 2009-05-27 株式会社荏原製作所 Substrate processing method and etching solution
US6916742B2 (en) * 2003-02-27 2005-07-12 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Modular barrier removal polishing slurry
US6953532B2 (en) * 2003-03-06 2005-10-11 Cabot Microelectronics Corporation Method of polishing a lanthanide substrate
GB2402941B (en) * 2003-06-09 2007-06-27 Kao Corp Method for manufacturing substrate
US20050056810A1 (en) * 2003-09-17 2005-03-17 Jinru Bian Polishing composition for semiconductor wafers
US6971945B2 (en) * 2004-02-23 2005-12-06 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Multi-step polishing solution for chemical mechanical planarization
US8338087B2 (en) * 2004-03-03 2012-12-25 Advanced Technology Materials, Inc Composition and process for post-etch removal of photoresist and/or sacrificial anti-reflective material deposited on a substrate
US20060154186A1 (en) * 2005-01-07 2006-07-13 Advanced Technology Materials, Inc. Composition useful for removal of post-etch photoresist and bottom anti-reflection coatings
US7923423B2 (en) * 2005-01-27 2011-04-12 Advanced Technology Materials, Inc. Compositions for processing of semiconductor substrates
CN102981377B (en) * 2005-06-07 2014-11-12 高级技术材料公司 Metal and dielectric compatible sacrificial anti-reflective coating cleaning and removal composition

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI654340B (en) 2013-12-16 2019-03-21 美商恩特葛瑞斯股份有限公司 Ni:NiGe:Ge SELECTIVE ETCH FORMULATIONS AND METHOD OF USING SAME
TWI674337B (en) * 2014-12-26 2019-10-11 日商富士軟片股份有限公司 Etching liquid, etching method using the same, and method for manufacturing semiconductor substrate product
TWI693305B (en) * 2017-09-29 2020-05-11 美商慧盛材料美國責任有限公司 Etching solution for simultaneously removing silicon and silicon-germanium alloy from a silicon-germanium/silicon stack during manufacture of a semiconductor device

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