KR20210132890A - Apparatus for processing substrate - Google Patents

Abstract

According to an embodiment of the present invention, an apparatus for processing a substrate comprises: a chamber providing a reaction space therein; a susceptor provided inside the chamber; and a gas injection unit having a plurality of injection holes opened in a polygonal shape on one surface of a plate facing the susceptor. The plate includes a first area in which each side of the polygonal shape abuts and a second area in which each edge of the polygonal shape faces each other. In the first area, a plurality of communication holes through which neighboring injection holes communicate may be formed.

Description

Substrate processing equipment {APPARATUS FOR PROCESSING SUBSTRATE}

The present invention relates to a substrate processing apparatus, and more particularly, to a substrate processing apparatus capable of improving the uniformity of a thin film of a substrate by forming a plurality of injection holes opened in a polygonal shape in a gas injection unit facing a susceptor. .

In general, in order to manufacture a semiconductor device or a flat panel display device, a deposition process for depositing a thin film of a specific material on a substrate, a photo process for exposing or hiding a selected region of these thin films using a photosensitive material, and removing the thin film from the selected region It undergoes an etching process for patterning as desired, and each of these processes is carried out inside a substrate processing apparatus designed in an optimal environment for the process.

1 is a schematic view of a general substrate processing apparatus, and FIG. 2 is a bottom view of the gas injection plate shown in FIG.

As shown in FIG. 1 , a general substrate processing apparatus 10 for depositing a thin film on a substrate includes a chamber 11 providing a reaction space S′ therein, and a gas supply means for supplying at least one gas. (13), a gas injection means 15 connected to the gas supply means 13 to inject gas to the upper portion of the substrate w, a substrate installed under the gas injection means 15 to place the substrate w It is composed of a mounting means (17), and a gas discharge means (19) for discharging gas to the outside. At this time, a plurality of injection holes 15b passing through one surface and the other surface of the plate 15a are formed in the gas injection means 15 .

As shown in Figure 2, the plurality of injection holes (15b) are formed concentrically opened on the other surface of the plate (15a) facing the substrate mounting means (17), the other surface of the plate (15a) includes a region (hereinafter, referred to as a “dead space 15c”) in which the injection hole 15b is not formed.

At this time, when the deposition process is performed using the general substrate processing apparatus 10 shown in FIGS. 1 to 2 , particles are generated as incomplete reactants by the precursor and the reaction gas remaining in the dead space 15c, and , the particles affect the substrate w to lower the operation rate of the chamber and lower the production yield.

In addition, the flow rate of the gas injected into at least one region of the substrate w corresponding to the dead space and other regions is not constant, so that the uniformity of the deposited thin film is reduced, which affects the quality of the product. act as a detrimental factor.

The embodiment is designed to solve the limitations of the prior art, and by opening the surface of the gas injection unit facing the susceptor in a honeycomb structure to minimize the area where the injection hole is not formed, the generation of particles is suppressed and the deposition of the thin film is formed. An object of the present invention is to provide a substrate processing apparatus capable of preventing a decrease in uniformity.

The technical problem to be solved in the embodiment is not limited to the technical problem mentioned above, and another technical problem not mentioned will be clearly understood by those of ordinary skill in the art to which the present invention belongs from the description below. will be able

One embodiment, a chamber providing a reaction space therein; a susceptor provided inside the chamber; and a gas injection unit having a plurality of injection holes opened in a polygonal shape on one surface of the plate facing the susceptor, wherein the plate includes a first region where each side of the polygonal shape abuts and each corner of the polygonal shape. may include a second region facing each other, and a plurality of communication holes through which adjacent injection holes communicate with each other are formed in the first region.

A partition wall may be formed in the second region of the plate to spatially separate the neighboring injection holes.

Each of the plurality of communication holes may be formed by being depressed in an inner direction of each of the plurality of injection holes from one surface of the plate.

The plurality of communication holes may communicate with the injection holes adjacent to each other with the partition wall interposed therebetween, and may be formed in contact with the bottom surface of the partition wall.

A first thickness of the partition wall may be different from a second thickness between the other surface of the plate and a bottom surface of the communication hole.

The first thickness may be greater than the second thickness.

The polygonal shape may include a hexagonal shape.

Each corner of the polygonal shape may form a gentle curve in which each vertex of the hexagon is curved toward an inscribed circle.

Each of the plurality of injection holes may include: a first injection hole penetrating vertically from the other surface of the plate and having a constant diameter; and a second injection hole tapered so as to gradually increase in diameter from the tip of the first injection hole toward one surface of the plate.

According to an embodiment of the present invention, the surface of the gas injection unit facing the susceptor is opened in a honeycomb structure and a communication hole is formed in an area where the neighboring injection holes overlap, thereby preventing the generation of a dead space inside the chamber. can be minimized Accordingly, generation of particles may be suppressed and the uniformity of the deposited thin film may be improved. In addition, since the purge gas is diffused through the communication hole to the neighboring injection hole, the cycle time of the process can be shortened.

In addition, by providing a partition wall that spatially separates the plurality of injection holes at the edge of the communication hole, the flow rate and pressure of the gas toward the substrate can be effectively controlled and the injection efficiency can be improved while achieving the minimization of the area where the injection holes are not formed. can be improved

Effects that can be obtained in this embodiment are not limited to the above-mentioned effects, and other effects not mentioned will be clearly understood by those of ordinary skill in the art from the following description. .

1 is a schematic diagram of a general substrate processing apparatus.
FIG. 2 is a bottom view of the gas injection plate shown in FIG. 1 .
3 is a schematic diagram of a substrate processing apparatus according to an embodiment.
4 is a perspective view of a gas injection unit provided in a substrate processing apparatus according to an exemplary embodiment.
5 is a bottom view of the gas injection unit shown in FIG.
6 is a longitudinal cross-sectional view taken along line AA' of FIG.
7 is a longitudinal cross-sectional view taken along line BB' of FIG.
8 is a schematic diagram of a substrate processing apparatus according to another embodiment.

Hereinafter, a preferred embodiment of the present invention that can specifically realize the above object will be described in detail with reference to the accompanying drawings. Since the embodiment may have various changes and may have various forms, specific embodiments will be illustrated in the drawings and described in detail in the text.

Terms such as “first” and “second” may be used to describe various elements, but these elements should not be limited by the terms. Further, as used hereinafter, relational terms such as "upper/upper/above" and "lower/lower/below" etc. do not necessarily require or imply any physical or logical relationship or order between such entities or elements, It may be used to distinguish one entity or element from another entity or element.

The terms used in the present application are only used to describe specific embodiments, and are not intended to limit the present invention. The singular expression includes the plural expression unless the context clearly dictates otherwise.

Hereinafter, the substrate processing apparatus 100 according to the embodiment will be described with reference to the accompanying drawings. The substrate processing apparatus 100 according to the embodiment is described using a Cartesian coordinate system, but the embodiment is not limited thereto. That is, according to the Cartesian coordinate system, the x-axis, the y-axis, and the z-axis are orthogonal to each other, but the embodiment is not limited thereto. That is, the x-axis, y-axis, and z-axis may intersect each other instead of being orthogonal.

3 is a schematic diagram of a substrate processing apparatus according to an embodiment.

Referring to FIG. 3 , the substrate processing apparatus 100 according to an embodiment may include a chamber 110 that is a space in which a substrate w is processed. A lid 111 (lid) is coupled to the chamber 110 , and an outlet 113 for discharging gas and a slot valve (not shown) for loading and unloading the substrate w may be provided.

The support unit 120 for supporting the substrate w may be installed in the lower inner side of the chamber 110 to be able to move up and down. The support unit 120 includes a susceptor 121 on which the substrate w is placed, a support shaft 123 having one side coupled to a lower surface of the susceptor 121 and the other side exposed to the outside of the chamber 110 , a support shaft A driving unit 125 for elevating and/or rotating the 123, and a bellows 127 installed in a form surrounding the support shaft 123 to seal between the support shaft 123 and the chamber 110, etc. can

The susceptor 121 may be provided as an electrostatic chuck to stably support the substrate w, and for this, direct current power providing an electrostatic attraction may be applied to the susceptor 121 .

A gas supply unit 130 for supplying a gas according to the characteristics of a thin film to be deposited on the substrate w may be installed on the outer upper side of the lead 111 , and the gas supply unit 130 includes the first gas supply unit 131 . ) and a second gas supply unit 133 .

The first gas supply unit 131 supplies gas to the first diffusion space 140a formed between the lid 111 and the gas injection unit 140 , and the second gas supply unit 133 is the gas injection unit 140 . A gas may be supplied to the second diffusion space 140b formed inside the .

The first gas supply unit 131 may supply a first process gas, and the second gas supply unit 133 may supply a second process gas having a different composition from the first process gas. Here, the first process gas may include a source material (precursor) required for deposition of the substrate. In addition, the first process gas may include a purge gas for purging the inside of the chamber 110 . Meanwhile, the second process gas may include a reactant capable of reacting with the source material.

The gas supply unit 130 simultaneously or alternately supplies a first process gas including a source material and a second process gas including a reactant into the chamber 110 to form a thin film having a desired thickness on the substrate w. can be deposited.

For example, according to an embodiment, the first process gas including the source material and the second process gas including the reactant are simultaneously injected into the chamber 110, and then the first process gas including the purge gas can be sprayed. This process constitutes one cycle, and the cycle is repeated a plurality of times to complete the CVD (Chemical Vapor Deposition) deposition process.

Alternatively, according to another embodiment, the first process gas containing the source material is injected into the chamber 110, and then the first process gas containing the purge gas is injected, and then the reaction material containing the first process gas is injected. A second process gas may be injected. This process constitutes one cycle, and the cycle is repeated a plurality of times to complete the ALD (Atomic Layer Deposition) deposition process.

The first gas supply unit 131 may be connected to the first flow path 132 , and may supply a first process gas to the first diffusion space 140a through the first flow path 132 . The first process gas introduced into the first diffusion space 140a may be sprayed onto the substrate w through the gas injection unit 140 .

The second gas supply unit 133 may be connected to the second flow path 134 , and may supply a second process gas to the second diffusion space 140b through the second flow path 134 . The second process gas introduced into the second diffusion space 140b is injected to the substrate w through the gas injection unit 140, and in this case, the flow paths of the first process gas and the second process gas may be separated from each other. .

Although not shown, the above-described gas supply unit 130 includes a first diffusion space 140a and/or a second diffusion space 140b through a diffusion hole (not shown) formed in one sidewall of the chamber 110 . may communicate with For example, a diffusion hole (not shown) is formed to penetrate the outer and inner surfaces of the chamber 110 , and the first gas supply part 131 and the second gas supply part 133 are formed through the diffusion hole (not shown). The first process gas and the second process gas may be supplied in a lateral direction (x-axis direction) of the chamber 110 .

The gas injection unit 140 is disposed to face the susceptor 121 , the first plate 141 and the first plate in which a plurality of injection holes 142 for injecting the process gas on the substrate w are formed. Located on the upper portion of the 141, a plurality of first injection nozzles 145 for communicating with the first diffusion space 140a and a second injection nozzle 147 for communicating with the second diffusion space 140b are provided. A second plate 143 may be included. In this case, the first plate 141 and the second plate 143 may be spaced apart from each other at regular intervals to form a second diffusion space 140b therebetween.

The plurality of injection holes 142 are perforated perpendicular to the first plate 141 to have an inverted funnel-shaped cross section, and at this time, the lower surface of the first plate 141 facing the susceptor 121 ( 141a) may be opened in a polygonal pattern such that the surface area exposed to the reaction space S by the plurality of injection holes 142 is minimized. This will be described later with reference to FIGS. 4 to 7 .

Each of the plurality of injection holes 142 penetrates vertically from the upper surface 141b of the first plate 141 and is a susceptor ( It may include a second injection hole 1423 that is tapered so as to gradually increase in diameter toward the 121 .

The first injection nozzle 145 may be accommodated in the first injection hole 1421 . To this end, the diameter of the inner peripheral surface of the first injection hole 1421 is formed to be larger than the diameter of the outer peripheral surface of the first injection nozzle 145 , and the tip of the first injection hole 1421 is the first injection nozzle 145 . It may be located on the same plane as the lower end of However, the scope of the present invention is not limited thereto, and the lower end of the first spray nozzle 145 may be longer or shorter than the front end of the first spray hole 1421 .

The second injection hole 1423 may be formed to be inclined at a predetermined angle with respect to the surface opposite to the susceptor 121 so that the first process gas or the second process gas is uniformly sprayed onto the substrate w.

Each of the plurality of first injection nozzles 145 has a pipe shape of an annular shape, and a second plate ( A through hole 145a may be formed in the thickness direction (z-axis direction) of 143 .

A portion of the first injection nozzle 145 is coupled to the second plate 143 , the other portion is accommodated in the first injection hole 1421 , and the first process gas introduced into the first diffusion space 140a is After being ejected through the through hole 145a of the first injection nozzle 145 , it is injected to the substrate w via the second injection hole 1423 .

The second injection nozzle 147 is installed through the second plate 143 , and one end thereof may be connected to the second flow path 134 , and the other end may communicate with the second diffusion space 140b. At this time, the second process gas introduced into the second diffusion space 140b through the second injection nozzle 147 is ejected into the space between the inner peripheral surface of the first injection hole 1421 and the outer peripheral surface of the first injection nozzle 124 . Then, it is injected to the substrate w via the second injection hole 1423 .

Meanwhile, in order for the ALD deposition process to be stably completed in the chamber 110 , the first process gas and the second process gas must be separated from each other so as not to be mixed in the gas phase and supplied into the chamber 110 . Accordingly, the second plate 143 according to an embodiment spatially separates the plurality of first injection nozzles 145 and the second injection nozzles 147 from each other, but the first process gas and the second process gas are mixed. By shortening the section as much as possible, it is possible to minimize the generation of particles.

On the other hand, the first plate 141 may be electrically connected to the first high frequency power source 150 for generating high frequency power for plasma generation (eg, 27 MHz or higher) through a matching unit (not shown), and the function of the upper electrode can be performed.

The second plate 143 may be installed on top of the first plate 141 to have a constant distance from the first plate 141 and grounded to the lead 111 , and for this purpose, it is connected to the grounding line 160 to be grounded. It can perform the function of an electrode.

However, the scope of the present invention is not necessarily limited thereto. For example, according to another embodiment, the first plate 141 is connected to the ground line 160 to perform a function of the ground electrode, and the second plate 143 is electrically connected to the first high frequency power supply 150 and the upper portion thereof. It can also perform the function of an electrode.

The susceptor 121 may be electrically connected to the second high-frequency power source 170 that generates high-frequency power (eg, 400 KHz to 27 MHz) for ion pull-in through a matching unit (not shown), and functions as a lower electrode. can do.

When high frequency power of different frequencies is applied to the first plate 141 and the susceptor 121 by the first high frequency power supply 150 and the second high frequency power supply 170 , respectively, the first plate 141 and the susceptor 121 . An electric field is formed in the reaction space S between 121, and electrons accelerated by this electric field collide with neutral gas to generate plasma, which is a mixture of ions and active species.

In addition, an insulating part 180 is further provided between the first plate 141 , the second plate 143 , and the lead 111 , and the insulating part 180 electrically insulates the first plate 141 . plays a role

The insulating part 180 includes a first insulating part 180a installed between the first plate 141 and the lead 111 and a second insulating part 180a installed between the first plate 141 and the second plate 143 . The insulating part 180b is included, and the first insulating part 180a and the second insulating part 180b may be formed of a material having high electrical insulation properties, for example, ceramic.

Hereinafter, a gas injection unit according to an embodiment will be described in more detail with reference to FIGS. 4 to 5 .

4 is a perspective view of the gas injection unit 140 provided in the substrate processing apparatus 100 according to an embodiment. Here, FIG. 2 shows only a portion of the first plate 141 in which the plurality of injection holes 142 are formed and the second plate 143 in which the plurality of first injection nozzles 145 are provided for more clear explanation. .

5 is a bottom view of the gas injection unit 140 shown in FIG.

4 to 5 , second plates 143 spaced apart at regular intervals are disposed on the upper portion of the first plate 141 , and a plurality of second plates 143 are disposed in the through holes 143a of the second plate 143 . One injection nozzle 145 may be coupled.

Each of the plurality of first injection nozzles 145 is provided in the form of an annular pipe, and a through hole 145a may be formed therein in the thickness direction of the second plate 143 .

A plurality of injection holes 142 for injecting at least one or more process gases may be formed in the first plate 141 . Each of the plurality of injection holes 142 is located in a region corresponding to each of the plurality of first injection nozzles 145 , and the minimum diameter of the inner peripheral surface of the injection hole 142 is greater than the diameter of the outer peripheral surface of the first injection nozzle 145 . can be formed.

In each of the plurality of injection holes 142 , the first pattern P1 is opened in a polygonal shape on the lower surface 141a of the first plate 141 and the first pattern P1 is opened in a circular shape on the upper surface 141b of the first plate 141 . A second pattern P2 is provided, and the injection hole 142 may be formed by penetrating the first and second patterns P1 and P2 in the thickness direction of the first plate 141 . Here, the polygonal shape may include a hexagonal shape or an octagonal shape, but more preferably a hexagonal shape as illustrated.

The plurality of injection holes 142 may form a honeycomb structure on the lower surface 141a of the first plate 141 by closely arranging the first pattern P1 having a hexagonal shape. Such a honeycomb structure serves to minimize the generation of a dead space in the chamber 110 to suppress the generation of particles, and to improve the uniformity of the thin film deposited on the substrate w. Here, the dead space may be understood to refer to an area in which the injection hole 142 is not formed on the lower surface 141a of the first plate 141 .

The first plate 141 has a first region R1 and a first region R1 in which adjacent injection holes 142a, 142b, and 142c overlap each other, and each side of the first pattern P1 contacts each other. ) and may include a second region R2 in which each corner of the first pattern P1 faces each other.

In the first region R1 of the first plate 141, a space (hereinafter, referred to as a 'communication hole (C)') in which the neighboring injection holes 142a, 142b, and 142c communicate with each other may be formed. The communication hole (C) serves as a passage for diffusing the process gas introduced into each injection hole (142) to the injection holes (142a, 142b, 142c) adjacent to each other, thereby being injected per unit area of the substrate (w). The amount of the process gas may be kept constant.

In addition, the communication hole (C) is formed by being merged in the inner direction of the injection hole 142 in the lower surface 141a of the first plate 141, the lower surface 141a of the first plate 141 is the communication The surface area exposed to the reaction space S by the ball C can be minimized.

Referring to the conventional gas injection means 15 shown in FIG. 2 , a dead space 15c is generated between the plurality of injection holes 15b on the other surface of the plate 15a, and when a predetermined deposition process is performed, the Particles are generated as incomplete reactants by the precursor and reaction gas remaining in the dead space 15c. These particles affect the substrate w to decrease the operation rate of the chamber and act as a factor for lowering the production yield.

On the other hand, in the gas injection unit 140 of an embodiment shown in FIG. 4 , as a plurality of communication holes C are formed in a region where a plurality of injection holes 142 opened in a hexagonal shape overlap each other, the susceptor ( Generation of a dead space on the lower surface 141a of the first plate 141 opposite to the 121 may be minimized. Here, the plurality of communication holes (C) may be formed in contact with the bottom surface of the partition wall 1415 to communicate the adjacent injection holes with a partition wall 1415 interposed therebetween.

In the second region R2 of the first plate 141, the neighboring injection holes 142a, 142b, and 142c are spatially formed in order to control the pressure of the process gas injected into the reaction space S of the chamber 110. A partition wall 1415 that separates (or isolates) may be formed.

The partition wall 1415 may be formed to surround at least three injection holes 142a, 142b, and 142c adjacent to each other. The bottom surface of the partition wall 1415 may form a closed curve shape by connecting edges of the first patterns P1 facing each other on the lower surface 141a of the first plate 141 . In this case, each corner of the first pattern P1 may be formed in a rounded shape such that each vertex of the hexagon is curved toward an inscribed circle to form a gentle curve.

The barrier rib 1415 serves to effectively control the flow rate and pressure of the process gas toward the substrate w, thereby improving the injection efficiency.

6 is a longitudinal cross-sectional view taken along line A-A' of FIG. 5 .

Referring to FIG. 6 , each of the plurality of injection holes 142 penetrates vertically from the upper surface 141b of the first plate 141 in the z-axis direction, and includes a first injection hole 1421 having a constant diameter and the first It may include a second injection hole 1423 that is tapered so as to gradually increase in diameter from the front end of the injection hole 1421 toward the lower surface 141a of the first plate 141 .

Here, the second injection hole 1423 is formed on a surface opposite to the susceptor 121 to prevent the first process gas and/or the second process gas from being locally and concentratedly injected into a portion of the substrate w. It may be formed to be inclined at a predetermined angle with respect to the .

In the first plate 141 , a communication hole C may be formed in a region where adjacent injection holes 142 overlap each other in the x-axis direction.

The communication hole C is formed by being merged in the inner direction (-z-axis direction) of the injection hole 142 from the lower surface 141a of the first plate 141, and the bottom surface CS of the communication hole C is It is spaced apart from the lower surface 141a of the first plate 141 by a predetermined interval Δd.

The communication hole C serves as a passage for diffusing the process gas into the injection holes 142 adjacent to each other, thereby improving the uniformity of the thin film deposited on the substrate w, and the cycle time of the process. ) can be shortened.

7 is a longitudinal cross-sectional view taken along the line B-B' of FIG. 5 . Here, in FIG. 7 , each of the x and y axes shown in FIG. 5 is replaced with each of the x′ axis and the y′ axis rotated by 60° clockwise with respect to the center of the first plate 141 .

Referring to FIG. 7 , in the first plate 141 , a communication hole C is formed in a region where adjacent injection holes 142 overlap each other in the y'-axis direction, and an edge region of the communication hole C is formed in the first plate 141 . A partition wall 1415 may be provided.

The communication hole C may be formed by being joined in the inner direction of the injection hole 142 in the lower surface 141a of the first plate 141 . The communication hole (C) may have an arc-shaped cross-section, but the scope of the present invention is not necessarily limited thereto.

The communication hole (C) serves as a passage for diffusing the plurality of first injection nozzles and/or the process gas introduced through the first injection nozzles to the injection holes 142 adjacent to each other, whereby the unit of the substrate w Since the amount of the process gas injected per area is kept constant and the uniformity of the deposited thin film is improved, the quality of the product can be improved.

In addition, since mutual exchange between precursors and reactive gases having different compositions is facilitated inside the communication hole (C), a chemical reaction may be smoothly performed. In addition, when the precursor and the reaction gas are purged, since the purge gas is actively diffused through the communication hole C, the cycle time of the process may be shortened.

The communication hole C is positioned between both ends of the partition wall 1415 that spatially separates the plurality of injection holes 142 , and may be formed in contact with the bottom surface of the partition wall 1415 . In this case, the thickness d1 of the partition wall 1415 may be the same as the thickness d2 of the first plate 141 .

In addition, the thickness d1 of the partition wall 1415 may be greater than the thickness d3 between the upper surface 141b of the first plate 141 and the bottom surface CS of the communication hole C. Accordingly, the flow rate and pressure of the process gas toward the substrate w can be effectively controlled, and the injection efficiency can be improved.

If the thickness d1 of the partition wall 1415 is less than or equal to the thickness d3 between the top surface 141b of the first plate 141 and the bottom surface CS of the communication hole C, the chamber As the process gas spreads widely in the reaction space (S) of

On the other hand, the above-described gas injection unit 140 may be applied to an apparatus for processing a multi wafer, in addition to the apparatus for processing a single wafer (single wafer). This will be described below with reference to FIG. 8 .

8 is a schematic diagram of a substrate processing apparatus according to another embodiment.

Referring to FIG. 8 , the substrate processing apparatus 200 according to another embodiment includes a chamber 210 that provides a reaction space, and a support unit 220 that is installed in the lower side of the chamber 210 to support the substrate w. , a gas supply passage 230 provided on the outer upper side of the chamber 210 to supply gas to the inside of the chamber 210 , and disposed to face the upper surface of the support unit 220 and supply gas toward the substrate w It may include a gas injection unit 240 for spraying.

A lid 211 is coupled to the chamber 210 , and an outlet 213 for discharging the process gas to the outside and a slot valve 215 for loading and unloading the substrate w may be provided. A plurality of inlets 211a and 211b for communicating with the gas supply passage 230 outside the chamber 210 are formed in the lid 211 , and the plurality of inlets 211a and 211b are based on the central point of the lid 211 . may be disposed along the circumferential direction.

The support unit 220 may be installed so as to be lifted from the inside of the chamber 210 . The support unit 220 includes a susceptor 221 for supporting the substrate w, a support shaft 223 having one end coupled to a lower surface of the susceptor 221 and the other end penetrating the chamber 210 and exposed to the outside. , a driving unit 125 for elevating and/or rotating the support shaft 223 , and a bellows 227 installed in a form surrounding the support shaft 223 to seal between the support shaft 223 and the chamber 210 . may include

The susceptor 221 may be rotatably disposed inside the chamber 210 in the shape of a disk. A plurality of substrate seating portions 221a and 221b concavely formed to seat the substrate w may be provided on the upper surface of the susceptor 221 . The plurality of substrate seating units 221a and 221b may be disposed to be spaced apart from each other in a horizontal direction (x-axis direction) and may be provided to be raised/lowered and/or rotated by the driving unit 225 .

The gas injection unit 240 may be coupled to the lower portion of the lead 211 to inject gas toward the support unit 220 . The gas injection unit 240 may include a plurality of injection plates 240 - 1 and 240 - 2 coupled to the lead 211 at positions spaced apart from each other in the horizontal direction (x-axis direction). At this time, the number of the plurality of injection plates 240-1 and 240-2 is formed to correspond to the number of the plurality of inlets 221a and 221b, and the plurality of injection plates 240-1 and 240-2 are formed to The substrate seating portions 221a and 221b may be disposed to face each other in a vertical direction (z-axis direction), respectively.

A concave groove may be formed on an upper side of each of the injection plates 240 - 1 and 240 - 2 , and the groove may be elongated along the radial direction of the susceptor 221 . And when each injection plate (240-1, 240-2) is closely coupled to the lead 211, surrounded by the lower surface of the lead 211 and the groove of each injection plate (240-1, 240-2) (240-1, 240-2) Diffusion spaces 240a and 240b may be formed.

In addition, a plurality of injection holes 242 are formed to pass through each of the injection plates 240 - 1 and 240 - 2 at the lower side of the groove, and the plurality of injection holes 242 is a diffusion space of the gas injection unit 240 . (240a, 240b) and the reaction space (S) of the chamber 210 to communicate with each other. The process gas introduced into each of the diffusion spaces 240a and 240b from the gas supply passage 230 may be sprayed onto the substrate w through the plurality of injection holes 242 .

At least one of the plurality of injection plates 240-1 and 240-2 injects a first process gas, and at least one of the plurality of injection plates 240-1 and 240-2 has a composition different from that of the first process gas. A second process gas may be injected. Here, the first process gas includes a source gas (precursor) required for deposition of the substrate and/or a purge gas for purging the inside of the chamber 210, and the second process gas includes a reactive gas capable of reacting with the precursor. can do. In the substrate processing apparatus 200 having the above configuration, as the susceptor 221 rotates while the source gas, the purge gas, and the reaction gas are continuously sprayed, the substrate seating portions 221a and 221b of the susceptor 221 are A source gas, a purge gas, and a reaction gas may be sequentially supplied to deposit a thin film on the substrate w.

Alternatively, at least one of the plurality of injection plates 240 - 1 and 240 - 2 may inject both the first process gas and the second process gas. In the substrate processing apparatus 200 having the above configuration, a source gas and a reaction gas are simultaneously sprayed to each of the plurality of substrate seating units 221a and 221b, and then a purge gas is supplied to deposit a thin film on the substrate w. can be

On the other hand, the plurality of injection holes 242 are perforated perpendicular to each injection plate 240-1 and 240-2 to have an inverted funnel-shaped cross section, and the plurality of injection holes 242 described above in FIGS. It may have substantially the same shape, structure, and function as the injection hole 141 .

In the plurality of injection holes 242, the first pattern P1 opened in a polygonal shape on the lower surface 241a of the injection plates 240-1 and 240-2 and the upper surfaces of the injection plates 240-1 and 240-2. A second pattern P2 opened in a circular shape is provided in 241b, and the plurality of spray holes 242 are formed in first and second patterns in the thickness direction of the spray plates 240 - 1 and 240 - 2 . (P1, P2) may be formed through the penetration. Here, the polygonal shape may include a hexagonal shape or an octagonal shape, but more preferably a hexagonal shape as shown.

That is, in the plurality of injection holes 242 , the hexagonal first pattern P1 is densely arranged to form a honeycomb structure on the lower surface 241a of the injection plates 240 - 1 and 240 - 2 . can do. Such a honeycomb structure serves to minimize the generation of a dead space in the chamber 210 to suppress the generation of particles and to improve the uniformity of the thin film deposited on the substrate w.

Each of the injection plates 240-1 and 240-2 communicates with a partition wall 2415 separating the plurality of injection holes 242 and the injection holes adjacent to each other with the partition wall 2415 interposed therebetween, and the partition wall 2415 ) may include a plurality of communication holes (C) formed in contact with the bottom surface.

A plurality of communication holes (C) are located in the first region (R1) where each side of the first pattern (P1) is in contact, and the injection hole (142) in the lower surface (241a) of each injection plate (240-1, 240-2) may be formed by being joined in the inward direction of

The partition wall 2415 may be positioned in the second region R2 in which each edge of the first pattern P1 faces each other, and may be formed in a shape to surround at least three neighboring injection holes 242 . The bottom surface of the partition wall 2415 has the shape of a closed curve in which each edge of the first pattern P1 facing each other is connected, and in this case, each edge of the first pattern P1 has each vertex of the hexagon curved toward the inscribed circle to make a round It may be formed in a round shape.

The plurality of communication holes (C) described above serve as passages for diffusing the first and/or second process gases introduced into the diffusion spaces 240a and 240b into the injection holes 242 adjacent to each other, and thereby the substrate ( Since the amount of the process gas injected per unit area of w) is kept constant and the uniformity of the deposited thin film is improved, the quality of the product can be improved. In addition, the aforementioned partition wall 2415 serves to effectively control the flow rate and pressure of the process gas directed to the substrate w, thereby improving the injection efficiency.

Although only a few have been described as described above in relation to the embodiments, various other forms of implementation are possible. The technical contents of the above-described embodiments may be combined in various forms unless they are incompatible with each other, and may be implemented in a new embodiment through this.

On the other hand, in the substrate processing apparatus 100 according to the above-described embodiment, thin film deposition such as Atomic Layer Deposition (ALD), Chemical Vapor Deposition (CVD), Thermal Chemical Vapor Deposition (TCVD), and Plasma Enhanced Chemical Vapor Deposition (PECVD) In addition to the process, it may also be used in a process for manufacturing a flat display device or a solar cell.

It is apparent to those skilled in the art that the present invention may be embodied in other specific forms without departing from the spirit and essential characteristics of the present invention. Accordingly, the above detailed description should not be construed as restrictive in all respects but as exemplary. The scope of the present invention should be determined by a reasonable interpretation of the appended claims, and all modifications within the equivalent scope of the present invention are included in the scope of the present invention.

Claims (9)

a chamber providing a reaction space therein;
a susceptor provided inside the chamber; and
a gas injection unit having a plurality of injection holes opened in a polygonal shape on one surface of the plate facing the susceptor; and
The plate is
A first area in which each side of the polygonal shape abuts and a second area in which each edge of the polygonal shape faces each other, wherein a plurality of communication holes through which neighboring injection holes communicate with each other are formed in the first area which is a substrate processing apparatus. The method of claim 1,
In the second region of the plate, a barrier rib for spatially separating the neighboring injection holes is formed. 3. The method of claim 2,
Each of the plurality of communication holes, the substrate processing apparatus, characterized in that formed by being depressed in the inner direction of each of the plurality of injection holes from one surface of the plate. 4. The method of claim 3,
The plurality of communication holes communicate with the injection holes adjacent to each other with the partition wall interposed therebetween, and are formed in contact with a bottom surface of the partition wall. 4. The method of claim 3,
The first thickness of the barrier rib is different from a second thickness between the other surface of the plate and the bottom surface of the communication hole, the substrate processing apparatus. 6. The method of claim 5,
The first thickness is a substrate processing apparatus, characterized in that formed larger than the second thickness. The method of claim 1,
The polygonal shape is a substrate processing apparatus, characterized in that it includes a hexagonal shape. 8. The method of claim 7,
Each corner of the polygonal shape,
A substrate processing apparatus, characterized in that each vertex of the hexagon is curved toward an inscribed circle to form a gentle curve. The method of claim 1,
Each of the plurality of injection holes,
a first injection hole penetrating vertically from the other surface of the plate and having a constant diameter; and
and a second injection hole tapered so as to gradually increase in diameter from a tip of the first injection hole toward one surface of the plate.

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