CN115537765A - Plasma chemical vapor deposition device and small-size groove filling method - Google Patents
Plasma chemical vapor deposition device and small-size groove filling method Download PDFInfo
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- CN115537765A CN115537765A CN202211185376.5A CN202211185376A CN115537765A CN 115537765 A CN115537765 A CN 115537765A CN 202211185376 A CN202211185376 A CN 202211185376A CN 115537765 A CN115537765 A CN 115537765A
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- 238000005229 chemical vapour deposition Methods 0.000 title claims abstract description 25
- 238000000034 method Methods 0.000 title claims abstract description 25
- 238000006243 chemical reaction Methods 0.000 claims abstract description 94
- 239000004065 semiconductor Substances 0.000 claims abstract description 54
- 238000009826 distribution Methods 0.000 claims abstract description 26
- 238000005530 etching Methods 0.000 claims abstract description 23
- 238000011065 in-situ storage Methods 0.000 claims abstract description 11
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 5
- 230000002093 peripheral effect Effects 0.000 claims 1
- 239000007789 gas Substances 0.000 description 114
- 210000002381 plasma Anatomy 0.000 description 29
- 238000007740 vapor deposition Methods 0.000 description 10
- 230000005672 electromagnetic field Effects 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000000151 deposition Methods 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 238000001020 plasma etching Methods 0.000 description 3
- 238000005019 vapor deposition process Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/04—Coating on selected surface areas, e.g. using masks
- C23C16/045—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/401—Oxides containing silicon
- C23C16/402—Silicon dioxide
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45561—Gas plumbing upstream of the reaction chamber
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45568—Porous nozzles
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45574—Nozzles for more than one gas
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/56—After-treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
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Abstract
The invention provides a plasma chemical vapor deposition device and a small-size groove filling method, wherein the device comprises: the device comprises a reaction cavity, a top cover, a carrying platform and a vacuumizing unit; the bearing platform is arranged in the reaction cavity and used for bearing the semiconductor structure placed in the reaction cavity; the top cover is covered on the top of the reaction cavity and is provided with a first gas supply channel and a second gas supply channel; one side of the top cover facing the reaction cavity is provided with an air guide unit, the middle part of the air guide unit is provided with an air guide channel, and the air guide channel is communicated with the second air supply channel; one side of the top cover facing the reaction cavity is provided with a gas distribution unit which is covered outside the gas guide unit; and the vacuumizing unit is communicated with the reaction cavity to extract gas in the reaction cavity. The invention solves the problems of semiconductor structure damage caused by in-situ etching, and dielectric layer thickness unevenness and different etching degrees caused by uneven gas distribution.
Description
Technical Field
The invention belongs to the technical field of semiconductor manufacturing, and particularly relates to a plasma chemical vapor deposition device and a small-size groove filling method.
Background
In the integrated circuit manufacturing process, a small-size deep groove exists in a semiconductor structure, and when a dielectric layer deposition process is carried out, the small-size deep groove generates pinch-off and voids when a dielectric layer is grown by adopting plasma enhanced chemical vapor deposition equipment. Under the normal condition, high-density plasma equipment is adopted to carry out vapor deposition and etch the dielectric layer, if NF3 in-situ etching is adopted, the semiconductor structure is easy to damage, and meanwhile, the conditions of different thicknesses and different etching degrees of dielectric layers of all parts in the semiconductor structure are caused due to the uneven distribution of gas in the reaction chamber.
Disclosure of Invention
The technical problem to be solved by the present invention is to provide a plasma chemical vapor deposition apparatus and a method for filling a small-sized trench, so as to solve the problems that the small-sized trench of a semiconductor structure has an increased aspect ratio due to a gradually decreased size in the deposition process, and the semiconductor structure is easily damaged by in-situ etching.
In order to solve or to improve the technical problem to some extent, according to an aspect of the present invention, there is provided a plasma chemical vapor deposition apparatus comprising: the device comprises a reaction cavity, a top cover, a carrying platform and a vacuumizing unit;
the carrying platform is arranged in the reaction cavity and is used for carrying the semiconductor structure placed in the reaction cavity;
the top cover is covered on the top of the reaction cavity, and a first gas supply channel and a second gas supply channel are arranged on the top cover;
one side of the top cover facing the reaction cavity is provided with an air guide unit, the middle part of the air guide unit is provided with an air guide channel, and the air guide channel is communicated with the second air supply channel;
one side of the top cover facing the reaction cavity is provided with a gas distribution unit, and the gas distribution unit is covered outside the gas guide unit;
and the vacuumizing unit is communicated with the reaction cavity to extract gas in the reaction cavity.
In some embodiments, the first air supply channel is provided in plurality, and the plurality of first air supply channels are arranged outside the second air supply channel;
from the top cap towards the direction of reaction cavity, the diameter of air guide unit increases gradually.
In some embodiments, the gas guide channel comprises a first channel and a plurality of second channels;
one end of the first channel is connected with the plurality of second air supply channels, one end of the plurality of second channels is connected with the other end of the first channel, and the other end of the plurality of second channels is communicated with the reaction cavity.
In some embodiments, the gas distribution unit is provided with a plurality of through holes, so that the gas introduced into the first gas supply channel and the second gas supply channel is uniformly dispersed into the reaction cavity.
In some embodiments, the periphery of one end of the gas guide unit facing the reaction cavity is connected to the gas distribution unit, so that the gas distribution unit is divided into a first part and a second part;
wherein the plurality of through holes of the first part of the air distribution unit are uniformly arranged, and the plurality of through holes of the second part are irregularly arranged.
According to another aspect of the present invention, there is provided a method for filling a small-sized trench, which is applied to the plasma chemical vapor deposition apparatus according to any of the above embodiments, and includes:
placing a semiconductor structure in a reaction cavity, wherein the semiconductor structure is provided with a small-size groove;
secondly, introducing first gas into the reaction cavity through the first gas supply channel so that the first gas forms a dielectric layer on the surfaces of the semiconductor structure and the small-size groove;
ionizing a second gas outside the reaction cavity, so that plasmas generated after ionization are introduced into the reaction cavity through the second gas supply channel, and etching the dielectric layer;
and step four, repeatedly executing the step two and the step three until the small-size groove is filled.
In some embodiments, the first gas comprises SiH 4 、O 2 And Ar by SiH 4 And O 2 Forming SiO on the surface of the semiconductor structure and the small-sized groove 2 And the dielectric layer is subjected to in-situ etching in the second step through Ar.
In some embodiments, the plasma in step three is F - Ions;
the third step further comprises: introducing a third gas into the reaction cavity through a second gas supply channel, wherein the third gas comprises F - Ions.
In some embodiments, the third gas further comprises: siO 2 2 And N 3+ To the SiO 2 SiF is formed by medium layer reaction 4 And NO X To accomplish a stand ofThe SiO 2 And etching the dielectric layer.
In some embodiments, the gas within the reaction chamber is extracted after step two is performed, and the gas within the reaction chamber is extracted after step three is performed.
According to another aspect of the present invention, there is provided a method for manufacturing a semiconductor device, including the method for filling a small-sized trench according to any one of the above embodiments.
According to another aspect of the present invention, there is provided a semiconductor device manufactured by the above-described method of manufacturing a semiconductor device.
Compared with the prior art, the invention has obvious advantages and beneficial effects. By means of the technical scheme, the plasma chemical vapor deposition device and the small-size groove filling method can achieve considerable technical progress and practicability, have wide industrial utilization value and at least have the following advantages:
(1) According to the plasma chemical vapor deposition device, the first gas supply channel and the second gas supply channel are arranged on the top cover, so that remote plasma etching can be realized in the vapor deposition process, and the damage of in-situ etching to a semiconductor structure is avoided.
(2) The invention ensures that the gas distribution is more uniform in the vapor deposition and remote plasma etching processes by arranging the gas distribution device, thereby ensuring the uniformity of the deposition and etching of the dielectric layer.
(3) In the invention, in the phase of semiconductor vapor deposition, the small-size groove is etched by introducing remote plasma, and the blocked opening is opened, so that better filling is realized, and meanwhile, the damage to the semiconductor structure caused by in-situ etching in the phase of vapor deposition is avoided.
The foregoing description is only an overview of the technical solutions of the present invention, and in order to make the technical means of the present invention more clearly understood, the present invention may be implemented in accordance with the content of the description, and in order to make the above and other objects, features, and advantages of the present invention more clearly understood, the following preferred embodiments are specifically described below with reference to the accompanying drawings.
Drawings
FIG. 1 is a schematic cross-sectional view of a plasma chemical vapor deposition apparatus according to an embodiment of the present invention;
FIG. 2 shows a cross-sectional structural view of a top cover of an embodiment of the present invention;
FIG. 3 is a schematic cross-sectional view of an air guide unit and an air distribution unit according to an embodiment of the present invention;
fig. 4 is a flowchart illustrating a method for filling a small-sized trench according to an embodiment of the present invention.
[ notation ] to show
1: reaction cavity
2: top cover
21: a first gas supply channel
22: a second gas supply channel
23: air guide unit
231: air guide channel
2311: first channel
2312: the second air guide channel
24: gas distribution unit
241: through-hole
242: the first part
243: the second part
3: carrying platform
4: antenna with a shield
5: vacuum pumping unit
Detailed Description
To further illustrate the technical means and effects of the present invention adopted to achieve the predetermined objects, the following detailed description will be given for the specific embodiments and effects of a plasma chemical vapor deposition apparatus and a method for filling a small-sized trench according to the present invention with reference to the accompanying drawings and preferred embodiments.
An embodiment of the present invention provides a plasma chemical vapor deposition apparatus, as shown in fig. 1, the apparatus includes a reaction chamber 1, a top cover 2, and a carrier 3.
The carrying platform 3 is disposed in the reaction chamber 1, and is used for carrying the semiconductor structure placed in the reaction chamber 1. The top cover 2 covers the top of the reaction cavity 1.
Further, the device is also provided with a vacuumizing unit 5, wherein the vacuumizing unit 5 is connected to the bottom of the reaction cavity 1 and communicated with the reaction cavity 1 so as to extract the gas in the reaction cavity 1.
As shown in fig. 2, the top cover 2 is provided with a first gas supply channel 21 and a second gas supply channel 22 for supplying gas for the vapor deposition and etching processes, respectively.
Specifically, the first gas supply channel 21 is used for introducing SiH into the reaction chamber 1 4 、O 2 And Ar to form SiO on the semiconductor structure by vapor deposition 2 A dielectric layer. The second gas supply channel 22 feeds SiO into the reaction chamber 1 2 、N 3+ And F - To pass through F - And etching the formed dielectric layer by ions, and particularly opening the blocked opening of the small-size deep groove on the semiconductor structure in the vapor deposition process, so as to improve the filling capacity of the small-size deep groove.
In an embodiment, an antenna 4 is disposed in the top cover 2, the antenna 4 generates an electromagnetic field in the reaction chamber 1, and the gas introduced from the first gas supply channel 21 generates plasma under the action of the electromagnetic field to form a dielectric layer on the surface of the semiconductor structure.
In one embodiment, as shown in fig. 2, there is one second air supply channel 22, there are a plurality of first air supply channels 21, and the plurality of first air supply channels 21 are dispersedly disposed outside the second air supply channel 22.
As shown in fig. 2 and 3, an air guide unit 23 is further provided on the top cover 2, an air guide channel 231 is provided in the middle of the air guide unit 23, and the air guide channel 231 is communicated with the second air supply channel 22.
Further, as shown in fig. 3, the diameter of the gas guide unit 23 is gradually increased from the top cover 2 to the reaction chamber 1, so that when the gas introduced into the first gas supply channel 21 flows along the outer side of the gas guide unit 23, the gas can dispersedly flow through the structure that the diameter of the gas guide unit 23 is gradually increased toward one end, and the uniformity of the gas introduced into the reaction chamber 1 through the first gas supply channel 21 is further ensured.
Preferably, as shown in fig. 3, the air guide unit 23 has a horn-shaped structure.
In one embodiment, as shown in FIG. 3, the air guide passage 231 provided in the middle of the air guide unit 23 includes a first passage 2311 and a plurality of second passages 2312. One end of the first passage 2311 is connected to the second gas supply passage 22, the other end of the first passage 2311 is connected to one end of the plurality of second passages 2312, and the other end of the plurality of second passages 2312 is communicated with the reaction chamber 1.
In this embodiment, the gas supplied from the second gas supply passage 22 is finally introduced into the reaction chamber 1 through the plurality of second passages 2312, so that the introduction of the gas is more dispersed, and the uniformity of the dispersion of the gas in the reaction chamber 1 is further ensured.
Preferably, as shown in fig. 3, the second channels 2312 are communicated with the other ends of the reaction chamber 1 and extend in a direction away from each other, so as to ensure that the gas is more dispersed when being introduced into the reaction chamber 1.
As shown in fig. 2, a gas distribution unit 24 is disposed on one side of the top cover 2 facing the reaction chamber 1, the gas distribution unit 24 is covered on the outer side of the gas guide unit 23, and the first gas supply channel 21 is covered therein, so as to disperse the gas introduced into the first gas supply channel 21 and the second gas supply channel 22, and ensure the uniformity of the dispersion of the gas in the reaction chamber 1.
As shown in fig. 2 and 3, the gas distribution unit 24 is a bowl-shaped structure, and a plurality of through holes 241 are provided on the gas distribution unit 24 to uniformly disperse the gas supplied from the first gas supply channel 21 and the second gas supply channel 22 into the reaction chamber 1.
Of course, the air distributing unit 24 may be configured as a honeycomb structure, and the present invention does not limit the specific shape of the air distributing unit 24.
In one embodiment, as shown in fig. 3, the gas guide unit 23 is connected to the gas distribution unit 24 at a periphery of an end thereof facing the reaction chamber 1, and the gas distribution unit 24 is divided into a first portion 242 and a second portion 243 by the connection thereof. The through holes 241 of the first portion 242 are uniformly arranged, and the through holes 241 of the second portion 243 are irregularly arranged.
As can be seen from fig. 3, most of the gas introduced into the first gas supply channel 21 flows into the reaction chamber 1 through the through holes 241 of the first part 242, and in order to make the gas more uniformly dispersed in the reaction chamber 1 and ensure that more plasma is generated under the action of the electromagnetic field, the through holes 241 of the first part 242 are uniformly arranged. Most of the gas introduced into the second gas supply channel 22 flows into the reaction chamber 1 through the through holes 241 of the second portion 243, and the gas can directly act on the surface of the semiconductor structure to complete etching without electromagnetic field action, and the through holes 241 of the second portion 243 are irregularly distributed based on the distribution of the small-sized deep grooves of the semiconductor structure.
Referring to fig. 4 in combination, according to an embodiment of the present invention, there is provided a method for filling a small-sized trench, which is applied to the plasma chemical vapor deposition apparatus of any one of the above embodiments, the method including:
step one, a semiconductor structure is placed in a reaction cavity, and the semiconductor structure is provided with a small-size groove.
Specifically, in the chemical vapor deposition process of the semiconductor structure, the semiconductor structure is placed on a carrying table in a reaction cavity of a plasma chemical vapor deposition device, wherein the semiconductor structure is provided with a small-size groove.
And step two, introducing first gas into the reaction cavity through the first gas supply channel so that the first gas forms a dielectric layer on the surfaces of the semiconductor structure and the small-size groove.
After the semiconductor structure is placed on the carrier, first gas is introduced into the reaction cavity through the first gas supply channel of the plasma chemical vapor deposition device, and an electromagnetic field is formed in the reaction cavity through the antenna of the plasma chemical vapor deposition device, so that the first gas generates plasma, and a dielectric layer is formed on the surface of the semiconductor structure and in the small-size groove.
It can be known that, in the process of depositing the dielectric layer on the semiconductor structure, when the structure of the hole or the groove is encountered, the deposition of the dielectric layer may cause pinch-off and voids at the opening of the hole or the groove, resulting in that the dielectric layer cannot be filled in the hole or the groove.
Based on this, in an embodiment, the first gas includes Ar (argon), and the first gas is used to perform preliminary in-situ etching during the vapor deposition process of the semiconductor structure, so as to remove the dielectric layer deposited at the opening of the small-sized trench and prevent the opening from being blocked by the dielectric layer.
Further, the first gas may also include SiH 4 (silane) and O 2 (oxygen), the SiH 4 And O 2 Under the action of electromagnetic field, siO is generated by reaction 2 SiO of the 2 And depositing to form a dielectric layer on the surfaces of the semiconductor structure and the small-size groove.
And step three, ionizing the second gas outside the reaction cavity, so that the plasma generated after ionization is introduced into the reaction cavity through the second gas supply channel, and etching the dielectric layer.
It can be known that, although can carry out preliminary in situ etching to the dielectric layer in step two, along with vapor deposition's the progress, the size of the last hole of semiconductor structure or groove can diminish, the aspect ratio of hole or groove can increase, still through the mode of in situ etching, can lead to the condition that semiconductor structure appears damaging, based on this kind of condition, through the mode of long-range plasma etching, carry out the ionization to the second gas outside plasma chemical vapor deposition device's reaction cavity, make it produce plasma, and then carry out the sculpture to semiconductor structure's dielectric layer in leading into the reaction cavity with plasma.
After the second gas is ionized, the second gas contains unionized second gas, charged ions, electrons and various radicals. In order to avoid the bombardment of the charged ions on the semiconductor structure, the plasma generated after the second gas is ionized is filtered before being introduced into the reaction cavity, so that the charged ions are prevented from entering the reaction cavity.
In one embodiment, the plasma generated by the second gas is F - Ions.
Further, the third step also includes the second step of passing through the plasma chemical vapor deposition deviceTwo gas supply channels introduce a third gas into the reaction chamber, wherein the third gas comprises the F - Ions.
Further, the third gas further comprises SiO 2 And N 3+ SiO through channel reaction chamber 2 、N 3+ And F - Ions with SiO formed on the semiconductor structure 2 The dielectric layer reacts to generate SiF 4 And NO X And further completing the etching of the dielectric layer of the semiconductor structure to open the opening of the small-size groove blocked by the dielectric layer, so that the small-size groove can be continuously filled with the dielectric layer.
And step four, repeatedly executing the step two and the step three until the small-size groove is filled.
Specifically, the second step and the third step are repeatedly executed until the dielectric layer of the small-size groove of the semiconductor structure is filled completely.
In the invention, when the first gas and the third gas are introduced into the reaction cavity, gas supply is completed through different gas supply channels, specifically, the first gas is introduced into the reaction cavity through the first gas supply channel, and the third gas is introduced into the reaction cavity through the second gas supply channel. So as to prevent the first gas and the third gas from generating chemical reaction in the gas supply channel, which results in that the vapor deposition procedure of the semiconductor structure can not be completed smoothly.
Further, in order to prevent the first gas from remaining in the second step, after the second step is completed, the gas in the reaction chamber is extracted by the vacuum unit. Similarly, after the third step is completed, the gas in the reaction chamber is extracted through the vacuumizing unit so as to prevent the third gas from remaining in the reaction chamber.
According to an embodiment of the present invention, a method for manufacturing a semiconductor device is provided, which includes the method for filling the small-sized trench described in any of the above embodiments.
According to an embodiment of the present invention, there is provided a semiconductor device manufactured by the manufacturing method of the semiconductor device of the above-described embodiment.
In the invention, in the phase of semiconductor vapor deposition, the small-size groove is etched by introducing remote plasma, and the blocked opening is opened, so that better filling is realized, and meanwhile, the damage to the semiconductor structure caused by in-situ etching in the phase of vapor deposition is avoided.
Although the present invention has been described with reference to a preferred embodiment, it should be understood that various changes, substitutions and alterations can be made herein without departing from the spirit and scope of the invention as defined by the appended claims.
Claims (10)
1. A plasma chemical vapor deposition device is characterized by comprising a reaction cavity, a top cover, a carrying platform and a vacuumizing unit;
the carrying platform is arranged in the reaction cavity and is used for carrying the semiconductor structure placed in the reaction cavity;
the top cover is covered on the top of the reaction cavity, and a first gas supply channel and a second gas supply channel are arranged on the top cover;
one side of the top cover facing the reaction cavity is provided with an air guide unit, the middle part of the air guide unit is provided with an air guide channel, and the air guide channel is communicated with the second air supply channel;
one side of the top cover facing the reaction cavity is provided with a gas distribution unit, and the gas distribution unit is covered outside the gas guide unit;
and the vacuumizing unit is communicated with the reaction cavity to extract gas in the reaction cavity.
2. The plasma chemical vapor deposition apparatus according to claim 1, wherein the first gas supply channel is plural, and the plural first gas supply channels are provided outside the second gas supply channel;
and the diameter of the air guide unit is gradually increased from the top cover to the reaction cavity.
3. A plasma chemical vapor deposition apparatus according to claim 2, wherein the gas guide channel comprises a first channel and a plurality of second channels;
one end of the first channel is connected with the plurality of second air supply channels, one end of the plurality of second channels is connected with the other end of the first channel, and the other end of the plurality of second channels is communicated with the reaction cavity.
4. A plasma chemical vapor deposition apparatus according to any one of claims 1 to 3, wherein the gas distribution unit is provided with a plurality of through holes, so that the gas introduced into the first gas supply channel and the second gas supply channel is uniformly dispersed into the reaction chamber.
5. The plasma chemical vapor deposition apparatus according to claim 4, wherein a peripheral edge of one end of the gas guide unit facing the reaction chamber is connected to the gas distribution unit, dividing the gas distribution unit into a first portion and a second portion;
wherein the plurality of through holes of the first part of the air distribution unit are uniformly arranged, and the plurality of through holes of the second part are irregularly arranged.
6. A method for filling a small-size groove, which is applied to the plasma chemical vapor deposition device of any one of claims 1 to 5, and comprises the following steps:
placing a semiconductor structure in a reaction cavity, wherein the semiconductor structure is provided with a small-size groove;
secondly, introducing first gas into the reaction cavity through the first gas supply channel so that the first gas forms a dielectric layer on the surfaces of the semiconductor structure and the small-size groove;
ionizing a second gas outside the reaction cavity, so that a plasma generated after ionization is introduced into the reaction cavity through the second gas supply channel, and etching the dielectric layer;
and step four, repeatedly executing the step two and the step three until the small-size groove is filled.
7. The method as claimed in claim 6, wherein the first gas comprises SiH 4 、O 2 And Ar by SiH 4 And O 2 Forming SiO on the surface of the semiconductor structure and the small-sized groove 2 And the dielectric layer is subjected to in-situ etching in the second step through Ar.
8. The method of claim 6, wherein the plasma in step three is F - Ions;
the third step further comprises: introducing a third gas into the reaction cavity through a second gas supply channel, wherein the third gas comprises F - Ions.
9. The small-sized trench filling method according to claim 8, wherein the third gas further comprises: siO 2 2 And N 3+ To the SiO 2 The dielectric layer reacts to form SiF 4 And NO X Completion of the alignment of the SiO 2 And etching the dielectric layer.
10. The method as claimed in claim 1, wherein the gas in the reaction chamber is extracted after the step two is performed, and the gas in the reaction chamber is extracted after the step three is performed.
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