KR20170030728A - Substrate Processing Apparatus - Google Patents

Substrate Processing Apparatus Download PDF

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Publication number
KR20170030728A
KR20170030728A KR1020150127900A KR20150127900A KR20170030728A KR 20170030728 A KR20170030728 A KR 20170030728A KR 1020150127900 A KR1020150127900 A KR 1020150127900A KR 20150127900 A KR20150127900 A KR 20150127900A KR 20170030728 A KR20170030728 A KR 20170030728A
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KR
South Korea
Prior art keywords
substrate
chamber
opening
guide member
plate
Prior art date
Application number
KR1020150127900A
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Korean (ko)
Inventor
김태학
최대준
Original Assignee
주식회사 원익아이피에스
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Priority to KR1020150127900A priority Critical patent/KR20170030728A/en
Publication of KR20170030728A publication Critical patent/KR20170030728A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02046—Dry cleaning only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

The substrate processing apparatus according to an embodiment of the present invention includes a chamber in which a process space is formed, a gas supply device for supplying gas into the chamber, an exhaust port for exhausting gas to a lower portion of the chamber, And a guide member provided at a lower end of the substrate support unit to guide the flow of the cleaning gas to a lower portion of the substrate support unit.

Description

[0001] Substrate Processing Apparatus [0002]

The present invention relates to a substrate processing technique, and more particularly, to a substrate processing apparatus.

A manufacturing process of a semiconductor device can be said to be a process of forming an electronic circuit which performs a certain function by forming a material film of various properties on a substrate by combining the order of lamination and the shape of a pattern.

Accordingly, in the semiconductor device manufacturing process, the unit processes such as deposition, etching, polishing, and cleaning processes are repeatedly performed. In order to carry out such a unit process, the substrate is brought into a chamber that provides an optimum condition for the progress of the process, and is processed.

Therefore, a plurality of chambers for performing various processes are installed in the manufacturing facility of the semiconductor device.

The thin film of the semiconductor device may be formed on the semiconductor substrate by a sputtering method, a vapor deposition method, a chemical vapor deposition method, an atomic layer deposition method, or the like. The thin film deposition apparatus may include a chamber, a gas supply device for supplying various gases into the chamber, and a substrate holding device on which the substrate is placed.

When forming a thin film in a thin film deposition apparatus, the inside of the chamber should be maintained at a required temperature. However, due to the internal structure of the chamber, the lower space is wider than the upper space of the substrate supporting apparatus and the vacuum exhaust port is provided at the lower side of the chamber, so that the heat inside the chamber can be lost through the lower space. Further, the temperature in the chamber can be changed by the pressure change in the chamber during the process. To compensate for such heat loss and temperature variations, the interior of the chamber must be continuously heated to maintain the required temperature, resulting in increased energy waste and process costs.

Further, during formation of the thin film in the thin film deposition apparatus, reaction products can be attached to the structures inside the chamber and inside the chamber. If the thin film forming process is continued with the reaction product attached, the reaction product is peeled off to generate particles. If the particles adhere to the substrate during the process, the yield is lowered due to the defective process.

Therefore, the deposition chamber of the thin film deposition apparatus needs to be cleaned at regular intervals. However, in a region where the cleaning gas is difficult to reach during the cleaning of the deposition chamber, for example, the rear surface of the substrate supporting apparatus, the cleaning efficiency is lowered, and the influence due to the reaction products remaining after the cleaning can not be completely eliminated.

Embodiments of the present technology can provide a substrate processing apparatus capable of maintaining a constant temperature inside a chamber during a thin film deposition process.

Embodiments of the present technology can provide a substrate processing apparatus capable of improving the cleaning efficiency of a deposition chamber.

A substrate processing apparatus according to an embodiment of the present invention includes a chamber in which a processing space is formed; A gas supply device for supplying gas into the chamber; An exhaust port for exhausting gas to the lower portion of the chamber; A substrate support positioned within the chamber and having a substrate seating portion on which the substrate is mounted, and a support shaft for supporting the substrate seating portion; And a guide member provided at a lower end of the substrate supporting unit to guide the flow of the cleaning gas to the lower portion of the substrate supporting unit.

According to the present invention, the flow of the cleaning gas can be induced between the plate of the guide member and the rear surface of the substrate supporting apparatus during cleaning of the substrate processing apparatus. As a result, the cleaning efficiency of the substrate holding apparatus and further the substrate processing apparatus can be improved, and the reliability and yield of the subsequent deposition process can be secured.

In addition, by providing the guide member having the plate facing the rear surface of the substrate supporting apparatus, heat inside the substrate processing apparatus can be prevented from being lost through the substrate processing apparatus lower region. Therefore, it is possible to reduce the amount of temperature change inside the substrate processing apparatus, thereby reducing the cost required for the deposition process.

1 is a perspective view of a guide member according to an embodiment of the present technology.
2 is a view for explaining a substrate processing apparatus according to an embodiment of the present technology.
3A and 3B are views for explaining a substrate processing method through a substrate processing apparatus according to an embodiment of the present invention.
4 is a timing chart for explaining a substrate processing method according to an embodiment of the present technology.
5 is a view for explaining a substrate processing apparatus according to another embodiment of the present technology.
6 is a perspective view of a guide member according to another embodiment of the present technology.
7 is a view for explaining a substrate processing apparatus according to another embodiment of the present technology.

Hereinafter, embodiments of the present technology will be described in more detail with reference to the accompanying drawings.

1 is a perspective view of a guide member according to an embodiment of the present technology.

The guide member 10 according to one embodiment may include a body 110 and a plate 120. The main body 110 may include a lower support portion 111 and a plurality of vertical supports 113A, 113B, and 113C.

The plate 120 may have a first opening 121 at the center thereof.

Each of the plurality of vertical supports 113A, 113B and 113C may be configured to support the plate 120 vertically along the outer periphery of the first opening 121 provided in the plate 120. [ To this end, a plurality of vertical supports 113A, 113B, and 113C may be connected at one end to the first opening 121 and the other end may extend vertically downward from the first opening 121. [

The lower support portion 111 may have a second opening 117 at the center thereof. The second openings 117 may be arranged to face the first openings 121, preferably opposed to each other. Each of the plurality of vertical supports 113A, 113B, and 113C may be connected to the outer periphery of the second opening 117. That is, the other end of the plurality of vertical supports 113A, 113B, and 113C may be connected to the second opening 117.

Accordingly, the first opening 121 and the second opening 117 can be spaced apart and opposed at intervals corresponding to the lengths of the plurality of vertical supports 113A, 113B, and 113C.

The vertical supports 113A, 113B and 113C are connected between the first and second openings 121 and 117 and are arranged at equal intervals to open the vertical supports 113A, 113B and 113C And may have a shape in which a portion 115 is formed.

The first opening 121 and the second opening 117 may have the same diameter. And may have a diameter greater than the diameter of the support shaft of the substrate support apparatus.

The guide member 10 may be selected from materials having thermal insulation properties, and may be formed using ceramics, for example.

The guide member 10 may be disposed such that the support shaft of the substrate supporting apparatus passes through the first opening 121 and the second opening 117, and will be described with reference to FIG.

2 is a view for explaining a substrate processing apparatus according to an embodiment of the present technology.

The substrate processing apparatus 20 may include chambers 210 and 220, a gas supply apparatus 230, substrate supporting apparatuses 240 and 250, and a guide member 10.

The chambers 210 and 220 may include a main body 210 having an open upper part and a top lead 220 opening and closing the upper part of the main body 210. The inner space of the chambers 210 and 220 formed by closing the upper portion of the main body 210 with the top leads 220 may be a space for processing the substrate S such as a deposition process. A gate G, through which the substrate S is carried in and out, may be provided at a designated position on the side of the main body 210. A through hole through which the support shaft 250 of the substrate supporting apparatuses 240 and 250 is inserted may be formed on the bottom surface of the main body 210. Since the inside of the chambers 210 and 220 is generally formed in a vacuum atmosphere, the exhaust port 270 for discharging the gas existing in the inner space of the chambers 210 and 220 is provided at a designated position of the main body 210, Can be formed. The exhaust port 270 may be connected to an external pump 290.

The gas supply device 230 may be installed inside the top lead 220 so as to face the substrate supporting devices 240 and 250. The gas supply device 230 may supply various gases supplied from the outside through the gas line 232 and inject the gases into the chambers 210 and 220. The gas supply device 230 may be selected from various types of gas supply devices such as a shower head type, an injector type, and a nozzle type.

The substrate support apparatus 240, 250 may include a substrate seating portion 240 and a support shaft 250. The substrate seating part 240 has a generally flat plate shape so that at least one substrate is placed on the upper surface thereof, and may be installed horizontally inside the chambers 210 and 220. The supporting shaft 250 is vertically coupled to the rear surface of the substrate seating part 240 and connected to an external driving part 280 through a through hole at the bottom of the chambers 210 and 220 to move the substrate seating part 240 up and down and / Or rotate the rotor.

As the guide member 10, for example, the guide member 10 shown in Fig. 1 can be used.

The plate 120 of the guide member 10 is installed to face the rear surface of the substrate seating portion 240. Also, the support shaft 250 may be installed so as to pass through the first opening 121 and the second opening 117 described in FIG. Accordingly, the vertical support portions 113 (113A, 113B, and 113C) of the guide member 10 can be disposed on the outer periphery of the support shaft 250. The lower end support portion 111 of the guide member 10 can be fixedly coupled to the bottom surface of the main body 210.

In one embodiment, the plate 120 may be fabricated to have a diameter substantially equal to or greater than the size of the substrate seating portion 240. However, the size of the plate 120 may be variously adopted depending on the internal environment of the chamber, the process atmosphere, and the like.

The distance between the plate 120 and the substrate seating part 240 can be varied according to the process purpose by the lifting and lowering of the support shaft 250.

For example, a thin film can be deposited while adjusting the distance between the gas supply device 230 and the substrate S by lifting and lowering the support shaft 250 by the driving unit 280 during the deposition process. The support shaft 250 is moved upward or downward by the driving unit 280 so that the interval between the gas supply unit 230 and the substrate seating unit 240 or the interval between the substrate seating unit 240 and the plate 120 The cleaning process can be performed.

During the thin film deposition process through the substrate processing apparatus 20, the process temperatures of the chambers 210 and 220, that is, the temperature of the substrate mount 240, may be controlled, for example, as shown in FIG.

4 is a timing chart for explaining a substrate processing method according to an embodiment of the present technology.

Referring to FIG. 4, the temperature in the chambers 210 and 220 in the first heating period D1 is raised to a first target temperature. When the temperature inside the chamber 210, 220 reaches the first temperature, thin film deposition is performed on the substrate S during the process section D2.

For example, in the case of depositing a titanium nitride (TiN) thin film, the process temperature at which substantial deposition occurs, i.e., the first temperature may be 300 to 700 ° C. Meanwhile, in the case of depositing a titanium (Ti) thin film, the process temperature, that is, the first temperature may be 300 to 650 ° C.

In process section D2, the temperature inside the chambers 210 and 220 must be kept constant. In the substrate processing apparatus 20 according to the present embodiment, the guide member 10 is provided. The guide member 10 can prevent the heat in the space above the chambers 210 and 220 from being moved to the lower space and being lost as shown in FIG. Further, even when the pressure in the chamber changes during the process, the temperature in the chamber can be kept constant.

Therefore, in the process section D2, the amount of temperature change inside the chambers 210 and 220 can be reduced to reduce power consumption, thereby reducing the cost required for the process.

In the process section D2, the thin film can be deposited while adjusting the distance between the gas supply device 230 and the substrate S through the lifting and lowering of the support shaft 250.

After the thin film deposition is completed, the inside of the chambers 210 and 220 is cooled to a target second temperature during the purge section D3, the substrate S is taken out, and the chambers 210 and 220 are cleaned during the cleaning section D4. The inside is cleaned.

In the case of depositing the titanium nitride thin film, the second temperature which is the cleaning temperature of the chambers 210 and 220 may be 200 to 500 ° C. As the cleaning gas, at least one cleaning gas selected from the group including TiCl 4 , NH 3 , and Ar CF 3 may be used.

In the case of the titanium thin film, the second temperature as the cleaning temperature may be 200 to 500 ° C. As the cleaning gas, at least one cleaning gas selected from the group including TiCl 4 , NH 3 , Ar CF 3 , and H 2 may be used.

When cleaning gas is supplied through the gas supply unit 230 to clean the inside of the chambers 210 and 220, the cleaning gas is supplied not only to the inner wall of the chamber but also to the inside of the chamber such as the substrate supporting apparatuses 240 and 250 Be cleanable.

3B, the cleaning gas is supplied from the upper part of the chambers 210 and 220 through the gas supply device 230, and the substrate seating part 240 is then heated by the plate 120 of the guide member 10, The flow of cleaning gas into the space between the plate 120 and the plate 120 can be induced.

Further, the cleaning gas smoothly flows through the openings 115 between the vertical supports 113 (113A, 113B, and 113C), and the discharge of the cleaning gas through the exhaust ports 270 at the bottoms of the chambers 210 and 220 is smooth .

As a result, the reaction by-products adhered to the rear surface of the substrate seating part 240 can be easily removed by the cleaning gas flowing over the plate 120, and reliability and yield of the subsequent deposition process can be ensured.

In one embodiment, the cleaning section D4 may be divided into a first cleaning section D41 and a second cleaning section D42. The first cleaning section D41 may be a soft cleaning section and the second cleaning section D42 may be a hard cleaning section.

The processing conditions of the chamber cleaning process after the deposition of the titanium nitride film may be as shown in [Table 1], but the present invention is not limited thereto.

division First rinse Second cleaning Stage 1 Step 2 Step 3 Step 4 Spacing (mm) 80 ~ 90 80 ~ 90 80 ~ 90 40 to 50 The first cleaning gas flow rate (sccm) 75 ~ 85 75 ~ 85 350 to 450 350 to 450 The second cleaning gas flow rate (sccm) 1800-2200 1800-2200 1800-2200 1800-2200 Pressure (T) 1.5 to 2.5 1.5 to 2.5 2.5 to 3.5 2.5 to 3.5

In the chamber cleaning process after the titanium film deposition, the processing conditions may be as shown in [Table 2], but the present invention is not limited thereto.

division First rinse Second cleaning Stage 1 Step 2 Step 3 Step 4 Spacing (mm) 8-14 10-16 10-16 55 ~ 65 The first cleaning gas flow rate (sccm) 75 ~ 85 75 ~ 85 500 to 600 500 to 600 The second cleaning gas flow rate (sccm) 1800-2200 1800-2200 2200-2600 2200-2600 Pressure (T) 1.5 to 2.5 1.5 to 2.5 3.5 to 4.5 3.5 to 4.5

In Table 1 and Table 2, "gap" means the distance between the gas supply device 230 and the substrate seating portion 240.

That is, during the cleaning process, the support shaft 250 is moved upward or downward by the driving unit 280 so that the distance between the gas supply unit 230 and the substrate seating unit 240 or the distance between the substrate seating unit 240 and the plate 120 The spacing can be adjusted. When the cleaning process is performed while the distance between the gas supply device 230 and the substrate mount 240 is narrowed, the removal efficiency of reaction by-products adhered to the gas supply device 230 side is improved. On the other hand, when the cleaning process is performed while the space between the substrate seating part 240 and the plate 120 is narrowed, the removal efficiency of the reaction by-products attached to the rear surface of the substrate seating part 240 is improved.

Referring to FIG. 4 again, after the inside of the chambers 210 and 220 has been cleaned, the next substrate S is taken in and the temperature in the chambers 210 and 220 during the second heating period D5 is increased to a target third temperature The pre-deposition process can be performed during the seasoning period D6.

In one embodiment, the third temperature at which the seasoning occurs in the case of the titanium nitride film may be 300 to 700 占 폚. In the case of the titanium film, the third temperature at which the seasoning is performed may be 300 to 650 ° C.

Then, during the third heating period D7, the temperature in the chambers 210 and 220 is raised to the first temperature to perform a thin film deposition process for the next substrate.

2, the exhaust port 270 is formed at the center of the bottom of the chambers 210 and 220, so that the exhaust gas from the gas supply device 230 at the upper end of the chambers 210 and 220 to the exhaust port 270 The cleaning gas is isotropic and can flow at the same flow rate.

Therefore, the cleaning gas uniformly flows along the upper surface and the lower surface of the substrate seating part 240 and the supporting shaft 250 on the inner surfaces of the chambers 210 and 220, thereby achieving a uniform cleaning result as a whole.

5 is a view for explaining a substrate processing apparatus according to another embodiment of the present technology.

The substrate processing apparatus 30 according to the present embodiment may include chambers 310 and 320, a gas supply apparatus 330, substrate supporting apparatuses 340 and 350 and a guide member 10.

The chambers 310 and 320 may include a main body 310 having an open upper portion and a top lead 320 opened and closed at an upper portion of the main body 310. A gate G, through which the substrate S is carried in and out, may be provided at a designated position on the side surface of the main body 310. A through hole through which the support shaft 350 of the substrate supporting apparatuses 340 and 350 is inserted may be formed on the bottom surface of the main body 310. At the designated position of the main body 310, for example, the bottom side, an exhaust port 370 for exhausting the gas present in the inner space of the chamber 310, 320 may be formed. The exhaust port 370 may be connected to an external pump 390.

The gas supply device 330 may be installed to face the substrate supporting devices 340 and 350 inside the top lead 320. The gas supply unit 330 may supply various gases supplied from the outside through the gas line 332 and inject it into the chambers 310 and 320. The gas supply device 330 may be selected from various types of gas supply devices such as a shower head type, an injector type, and a nozzle type.

The substrate support devices 340 and 350 may include a substrate seating portion 340 and a support shaft 350. The substrate seating part 340 has a generally flat shape so that at least one substrate is seated on the upper surface thereof, and may be installed horizontally inside the chambers 310 and 320. The supporting shaft 350 is vertically coupled to the rear surface of the substrate seating part 340 and connected to an external driving part 380 through a through hole at the bottom of the chambers 310 and 320 to move the substrate seating part 340 up and down and / Or rotate the rotor.

As the guide member 10A, for example, a shape in which the guide member 10 shown in Fig. 1 is deformed can be used.

In this embodiment, the guide member 10A includes a flow control portion 119 that gradually protrudes from the plate 120A in the horizontal direction at one side of the plate 120A, and the other configuration includes the guide member 10 Substantially the same.

That is, in the guide member 10A according to the present embodiment, the first interval which is the interval between the side wall of the chamber 310, 320 on the side where the exhaust port 370 is formed and the plate 120A is smaller than the first interval on the side where the exhaust port 370 is not formed And a flow control unit 119 protruded to be narrower than a second gap that is a distance between the side wall of the chamber 310, 320 and the plate 120A.

The plate 120A of the guide member 10A is installed so as to face the rear surface of the substrate seating portion 340. [ Also, the support shaft 350 may be installed to pass through the first opening 121 and the second opening 117 described in FIG. Accordingly, the vertical supports 113 (113A, 113B, 113C) of the guide member 10A can be disposed on the outer periphery of the support shaft 350. [ The lower end support portion 111 of the guide member 10A can be fixedly coupled to the bottom surface of the main body 310. [

5, the exhaust port 370 is formed on the bottom side of the chambers 310 and 320. In this case, the uniform flow rate and isotropy of the cleaning gas may not be guaranteed.

That is, the flow rate of the cleaning gas may be relatively large on the side where the exhaust port 370 is formed, and the flow rate may be relatively small on the opposite side. The plate 120A of the guide member 10A according to the present embodiment is formed in an asymmetrical structure so as to include the flow rate control unit 119 and the flow rate control unit 119 is disposed in the exhaust port 370 when installed in the chambers 310, As shown in Fig.

During the cleaning process inside the chambers 310 and 320, the cleaning gas is supplied from the gas supply device 330. A larger amount of gas can be flowed by the suction force of the pump 390 through the side where the exhaust port 370 is formed as compared with the side where the exhaust port 370 is not formed. However, in the present embodiment, the flow rate control unit 119 provided in the guide member 10A can reduce the flow rate of the cleaning gas through the side where the exhaust port 370 is formed. Therefore, the flow rate of the cleaning gas flowing along the side where the exhaust port 370 is not formed and the flow rate of the cleaning gas flowing along the side where the exhaust port 370 is formed can be controlled to be substantially the same.

6 is a perspective view of a guide member according to another embodiment of the present technology.

The guide member 10B according to the present embodiment may include a plurality of support pins 122 in addition to the guide member 10 shown in Fig.

The plurality of support pins 122 may be formed on the upper surface of the plate 120, that is, at predetermined positions of the surface facing the substrate seating portion, at predetermined intervals, diameters, and heights.

The support pin 122 may be a portion where the lift pin, which may be provided in the substrate supporting apparatus, is seated.

7 shows a substrate processing apparatus according to another embodiment of the present technology.

The chambers 410 and 420 may be composed of a body 410 and a top lead 420 and may include a gate G. [

The substrate support devices 440 and 450 may include a substrate seating portion 440 and a support shaft 450. In particular, a plurality of through holes through which the lift pins 442 are installed may be formed at specified positions of the substrate seating portion 440.

The plate 120 of the guide member 10B is installed to face the rear surface of the substrate seating portion 440. [ Also, the support shaft 450 may be installed so as to pass through the first opening 121 and the second opening 117. Accordingly, the vertical supports 113 (113A, 113B, and 113C) of the guide member 10B can be disposed on the outer periphery of the support shaft 450. The lower end support portion 111 of the guide member 10B can be fixedly coupled to the bottom surface of the main body 410. [

Reference numeral 430 denotes a gas supply unit, reference numeral 470 denotes an exhaust port, reference numeral 480 denotes a driving unit, and reference numeral 490 denotes a pump. The functions of the respective components are similar or substantially the same as those of the substrate processing apparatuses 20 and 30 shown in FIG. 2 or 5, and thus a detailed description thereof will be omitted.

In this embodiment, the substrate seating portion 440 includes a lift pin 442. When the substrate seating portion 440 is lowered by the support shaft 450, the lift pins 442 can be seated on the support pins 122.

The lift pin 442 may protrude above the substrate seating portion 440 when the lift pin 442 is seated on the support pin 122. Thereby allowing the distance between the substrate S on the lift pin 442 and the substrate seating portion 440 to be spaced apart.

7 shows an example in which the exhaust port 470 is formed at the bottom of the chambers 410 and 420. However, the exhaust port 470 may be formed at the sides of the chambers 410 and 420.

Thus, those skilled in the art will appreciate that the present invention may be embodied in other specific forms without departing from the spirit or essential characteristics thereof. It is therefore to be understood that the embodiments described above are to be considered in all respects only as illustrative and not restrictive. The scope of the present invention is defined by the appended claims rather than the detailed description and all changes or modifications derived from the meaning and scope of the claims and their equivalents are to be construed as being included within the scope of the present invention do.

10, 10A, 10B: guide member
110:
111: lower support
113A, 113B, and 113C:
120: Plate
20, 30, 40: substrate processing apparatus

Claims (10)

A chamber in which a processing space is formed;
A gas supply device for supplying gas into the chamber;
An exhaust port for exhausting gas to the lower portion of the chamber;
A substrate support positioned within the chamber and having a substrate seating portion on which the substrate is mounted, and a support shaft for supporting the substrate seating portion; And
A guide member provided at a lower end portion of the substrate supporting portion so that a flow of cleaning gas is guided to a lower portion of the substrate supporting portion;
The substrate processing apparatus comprising: The method according to claim 1,
Wherein the guide member includes: a plate formed in a direction parallel to the substrate supporting apparatus and having a first opening formed at a center thereof;
A plurality of vertical supports each having one end connected to the outer periphery of the first opening and the other end extending vertically downward from the first opening to support the plate; And
A lower end supporting part connected to the other end of the plurality of supporting parts and coupled to a lower end of the chamber;
The substrate processing apparatus comprising: 3. The method of claim 2,
The lower support portion includes a second opening at the center,
And the support shaft is provided so as to pass through the first opening and the second opening. 3. The method of claim 2,
And an opening formed between the plurality of vertical supports. The method according to claim 1,
Wherein the guide member is made of a ceramic material. The method according to claim 1,
Wherein the substrate seating portion further includes a plurality of through holes and lift pins that are raised and lowered through the through holes,
Wherein the plate further comprises a support pin on which the lift pin is supported. The method according to claim 1,
Wherein the exhaust port is formed at a lower central portion of the chamber. The method according to claim 1,
And the exhaust port is formed at a lower side portion of the chamber. 9. The method of claim 8,
Wherein the plate has a larger radius at a side extending toward the inner wall of the chamber on the side where the exhaust port is formed with respect to the center. The method according to claim 1,
Wherein the plate has a symmetrical or asymmetrical shape.
KR1020150127900A 2015-09-09 2015-09-09 Substrate Processing Apparatus KR20170030728A (en)

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