KR20090051984A - Apparatus for treating a substrate - Google Patents

Apparatus for treating a substrate Download PDF

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Publication number
KR20090051984A
KR20090051984A KR1020070118475A KR20070118475A KR20090051984A KR 20090051984 A KR20090051984 A KR 20090051984A KR 1020070118475 A KR1020070118475 A KR 1020070118475A KR 20070118475 A KR20070118475 A KR 20070118475A KR 20090051984 A KR20090051984 A KR 20090051984A
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KR
South Korea
Prior art keywords
gas
process chamber
substrate
chamber
top nozzle
Prior art date
Application number
KR1020070118475A
Other languages
Korean (ko)
Inventor
이상봉
Original Assignee
세메스 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 세메스 주식회사 filed Critical 세메스 주식회사
Priority to KR1020070118475A priority Critical patent/KR20090051984A/en
Publication of KR20090051984A publication Critical patent/KR20090051984A/en

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45574—Nozzles for more than one gas
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes

Abstract

The present invention relates to an apparatus for forming a thin film on a semiconductor substrate by generating a plasma. The substrate processing apparatus of the present invention includes a process chamber providing a space in which a plasma is generated; A support member installed in the process chamber to support a substrate; A gas supply member supplying a process gas to the process chamber; The gas supply member may include side nozzles installed at a side of the process chamber; It includes a top nozzle installed on the upper surface of the process chamber.

Description

Substrate Processing Unit {APPARATUS FOR TREATING A SUBSTRATE}

1 is a configuration diagram schematically showing a substrate processing apparatus according to an embodiment of the present invention.

2 is a view showing a gas supply member installed in the upper chamber shown in FIG.

3 is a view showing a top nozzle installed in the upper chamber.

4 is a view showing the injection holes formed in the top nozzle.

5 is a view for explaining the flow of the process gas during the process of the substrate processing apparatus according to the present invention.

* Explanation of symbols for the main parts of the drawings *

110: process chamber 120: support member

130 drive unit 140 exhaust unit

160: gas supply member 162,164: side nozzle

166: Top Nozzle

The present invention relates to a substrate processing apparatus, and more particularly, to an apparatus for generating a plasma to form a thin film on a semiconductor substrate.

The chemical vapor deposition process is a process of forming a thin film on a semiconductor substrate by a chemical reaction of a gas for manufacturing a semiconductor device. In recent years, among the apparatuses performing the chemical vapor deposition process, a high density plasma chemical vapor deposition (HDP-CVD) apparatus capable of effectively filling a space having a high aspect ratio has been mainly used.

The HDP-CVD apparatus forms plasma with high density by applying electric and magnetic fields to have higher ionization efficiency than conventional plasma CVD (PE CVD), and decomposes source gas and deposits an insulating film on the wafer. A bias power source for etching the interlayer insulating film deposited on the wafer together with the generated source power source is applied during the deposition of the interlayer insulating film, thereby simultaneously depositing the interlayer insulating film and sputter etching of the interlayer insulating film. In performing these processes, when the process gas supplied into the reaction chamber is uniformly distributed around the wafer, deposition of the surface of the semiconductor substrate is uniform, thereby obtaining an excellent film. In addition, even when performing the etching process, when the distribution of the process gas is uniform, the sputtering becomes uniform as a whole and thus the desired etching can be performed.

However, since this process is performed at a very low pressure of 3-10 mTorr, the distribution of the process gas inside the reaction chamber is very sensitive to change in dynamics. For this reason, the process gas is uniformly distributed around the wafer. The device for dispensing them also needs to be designed with great precision.

An object of the present invention is to provide a substrate processing apparatus capable of forming a uniform thin film in the center region of the substrate.

It is also an object of the present invention to provide a substrate processing apparatus capable of uniformly supplying a process gas to an upper portion of a substrate center.

According to a feature of the present invention for achieving the above object, the substrate processing apparatus includes a process chamber for providing a space in which a plasma is generated; A support member installed in the process chamber to support a substrate; A gas supply member supplying a process gas to the process chamber; The gas supply member may include side nozzles installed at a side of the process chamber; It includes a top nozzle installed on the upper surface of the process chamber.

According to an embodiment of the present invention, the top nozzle includes: a tubular first body having a gas flow path therein; And a second body formed in a disc shape at a lower end of the first body and having a plurality of injection holes connected to the gas flow paths in which process gas is injected.

According to an embodiment of the present invention, the injection holes are arranged at a predetermined interval and direction from the center to the second body.

According to an embodiment of the present invention, the top nozzle further includes a tubular third body for supplying a cleaning gas to the process chamber.

According to an embodiment of the present invention, the third body sprays the cleaning gas toward the rear surface of the second body so that the cleaning gas flows to the inner wall of the process chamber.

According to an embodiment of the present invention, the side nozzles include: two first nozzles for injecting a first process gas; Nozzles comprising one second nozzle for injecting a second process gas are arranged at equal angles with respect to the substrate.

For example, embodiments of the present invention may be modified in various forms, and the scope of the present invention should not be construed as being limited by the embodiments described below. This embodiment is provided to more completely explain the present invention to those skilled in the art. Accordingly, the shape of the elements in the drawings and the like are exaggerated to emphasize a clearer description.

In addition, embodiments to be described later will be described using high density plasma chemical vapor deposition (HDP-CVD) as an example of a semiconductor manufacturing apparatus. However, the present invention is applicable to any semiconductor substrate processing apparatus having a gas supply member for injecting a process gas into a process chamber in which a substrate processing process is performed.

Hereinafter, an embodiment of the present invention will be described in more detail with reference to FIGS. 1 to 5. In the drawings, the same reference numerals are given to components that perform the same function.

(Example)

1 is a configuration diagram schematically showing a substrate processing apparatus according to an embodiment of the present invention. And, Figure 2 is a view showing a gas supply member installed in the upper chamber shown in FIG.

1 and 2, a substrate device 100 according to an embodiment of the present invention may include a process chamber 110, a support member 120, and a driven member 130. , An exhaust member 140, and a gas supply member 160.

Process chamber 110 includes upper and below chambers 112 and 114. The upper chamber 112 has sides on which side nozzles are mounted and an upper surface on which the top nozzle is mounted. An upper electrode is installed on the upper surface of the upper chamber 112. The upper electrode is disposed to surround the upper chamber 112 on the outer surface of the upper chamber 112 in a coil shape, and source power of about 100 KHz to 13.56 Mh and 3,000 to 10,000 Watts may be applied to the upper electrode 118. The upper electrode 118 functions as an energy source for providing energy for exciting the source gases injected into the upper chamber 112 to the plasma state.

The lower chamber 114 is disposed below the upper chamber 112. The lower chamber 114 and the upper chamber 112 are manufactured to be separated and combined with each other. One side of the lower chamber 114 is provided with an entrance 114a. The entrance and exit 114a enters and exits the substrate W during the process. In addition, an outlet 114b is provided on the other side of the lower chamber 114. The discharge port 114b is an opening through which the process gas used during the process is discharged.

The support member 120 supports the substrate (W). As the support member 120, an electrostatic chuck for fixing and supporting the substrate by an electric force may be used. The support member 120 is provided with a lower electrode (not shown) for guiding the plasma formed in the process chamber onto the wafer. A bias power of about 100 KHz to 13.56 Mhz and 1,500 to 5,000 Watts may be applied to the lower electrode.

In addition, the support member 120 may be provided with at least a plurality of lift pins (not shown) for raising and lowering the substrate (W). The lift pin lifts and lowers the substrate W to separate the substrate W from the upper surface of the support member 120 or to seat the substrate W on the upper surface. In addition, the support member 120 may be provided with a heater (not shown) for heating the seated substrate (W). The heater heats the temperature of the substrate W to the process temperature.

The driving unit 130 raises and lowers the support member 120. The driving unit 130 lifts and lowers the support member 120 so that the height of the substrate W is adjusted to a predetermined height during the process.

The exhaust unit 140 discharges the gas in the process chamber 110 to the outside. In addition, the exhaust unit 140 reduces the pressure inside the process chamber 110 to the process pressure. The exhaust unit 140 includes an exhaust line 142, an opne / close member 144, and a suction member 146. The exhaust line 142 is connected to the outlet 114b. The opening and closing member 144 is installed on the exhaust line 142. The opening and closing member 142 opens and closes the gas movement passage in the exhaust line 142. As the opening and closing member 144, a gate valve may be used to open and close the gas movement passage by operating in a direction perpendicular to the gas movement direction.

The suction member 146 is installed on the exhaust line 142 at the rear end of the opening and closing member 144. The suction member 146 forcibly sucks gas in the process chamber 110. As the suction member 146, a turbo-molecular pump may be used to force the gas in the process chamber 110 by vacuum. In addition, the suction member 146 forcibly discharges the gas in the process chamber 110, thereby adjusting the pressure in the process chamber 110. For example, the suction member 146 vacuum suctions the pressure inside the vacuum chamber 110 to a pressure of 0.1 mTorr or less.

The exhaust unit 140 having the above-described configuration discharges air into the process chamber 110 to reduce the internal pressure of the process chamber 110 to the process pressure. In addition, the exhaust unit 140 discharges process by-products such as polymer or powder generated in the process chamber 110 to the outside.

When the deposition process is performed using the substrate processing apparatus, the semiconductor substrate W is fixed to the support member 120 inside the process chamber 110, and a process gas for performing deposition is provided through the gas supply member 160. Supply to the interior of the process chamber 110. In addition, the inside of the process chamber 110 is maintained in a vacuum state by the operation of the suction member 146, and power is applied to the upper electrode 118 so that the process gas is in a plasma state. This dissociates the process gas and generates a chemical reaction, thereby forming a thin film by deposition on the surface of the semiconductor substrate (W).

When the processing process is performed, the process gas is uniformly distributed around the semiconductor substrate W, and when the density of the process gas is high, the desired process can be uniformly performed. To this end, the gas supply member 160 of the present invention and the side nozzles (162, 164) are installed on the side of the process chamber 110 so that the process gas is evenly supplied to the reaction region on the substrate (W), the process A top nozzle 166 is installed on the upper surface of the chamber 110. Here, the process gas may include a reaction gas, a cleaning gas, and an inert gas. The reaction gases are gases for forming a predetermined thin film on the substrate W, and the cleaning gases are gases for removing reaction by-products adsorbed on the inner wall of the process chamber 110. The inert gas is a gas for purging the inside of the process chamber 110.

First, the side nozzles 162 have three nozzles in one group. The side nozzles 162 and 164 are arranged at regular intervals, such that nine of these groups are located on the side of the upper chamber 112. The first nozzle 162 located at both sides of the three nozzles injects the first process gas, and the second nozzle 164 located in the middle of the three nozzles injects the second process gas.

In this embodiment, a method of forming a SiO 2 thin film on a substrate using SiH₄ gas (silane gas) and O 2 gas as the first process gas and the second process gas, respectively, will be described.

3 is a view showing a top nozzle installed in the upper chamber. 4 is a view showing the injection holes formed in the top nozzle.

3 and 4, the top nozzle 166 is formed in a disc shape at a lower end of the tubular first body 168 and the first body 168 having a gas flow path 168a therein, and the gas A second body 169 having a plurality of injection holes 169a in which the first process gas is injected and connected to the flow path, and a tubular third body 170 for supplying the cleaning gas to the process chamber. Include.

The injection holes 169a formed in the second body 169 are arranged at regular intervals and directions from the center of the second body 169 to provide a uniform shape as shown in FIG. 4. The top nozzle 160 in which the injection holes 169a are formed may be easily set on the upper surface of the upper chamber 112.

5 is a view for explaining the flow of gas during the process of the substrate processing apparatus according to the present invention.

When the process is started, the substrate W is introduced into the process chamber 110 through the entrance 114a and then loaded on the upper surface of the support member 120. The support member 120 fixes the substrate W so as not to be separated from the support member 120. The driver 130 drives the support member 120 to adjust the height of the substrate W to a predetermined process height. When the substrate W is positioned at the process height, a process of forming a thin film SiO 2 on the substrate W is performed. The thin film formation process is as follows. The exhaust unit 140 sucks gas in the process chamber 110 to reduce the pressure inside the process chamber 110 to the process pressure. When the inside of the process chamber 110 is depressurized to a process pressure, high frequency power is applied to the upper electrode and the lower electrode. At this time, the inside of the process chamber 110 is heated to a process temperature.

The gas supply member 160 injects the process gas into the process chamber 110. That is, the side nozzles 162 and 164 horizontally inject the first process gas and the second process gas to the upper region of the substrate, and the top nozzle 166 vertically injects the first process gas onto the substrate. The first process gas and the second process gas injected from the side nozzles 162 and 164 and the top nozzle 166 are chemically reacted in the upper region of the substrate to generate a thin film gas. That is, the first process gas (SiH₄) and the second process gas (O₂) are chemically reacted with each other to generate a reaction gas (SiO₂). The chemically reacted gas (SiO 2) is moved downward toward the substrate (W) to form a thin film on the substrate (W). In more detail, the first process gas and the second process gas injected from the side nozzles 162 and 164 are uniformly distributed throughout the substrate after intensive chemical reaction in the upper region of the substrate. Since the first process gas additionally supplied at 166 is provided in the vertical direction, the chemically reacted gas (SiO 2) is moved downward toward the substrate (W) to form a uniform thin film on the substrate (W).

When a thin film is formed on the substrate W, the process gas supply of the gas supply member 160 is stopped, and the purge gas injection nozzle (not shown) of the gas supply member 160 is inert into the process chamber 110. The gas is supplied to raise the pressure in the process chamber 110 to atmospheric pressure. In addition, the exhaust unit 160 discharges the reaction by-products in the process chamber 110 to the outside. When the pressure of the process chamber 110 rises to the normal pressure, the substrate W is unloaded from the support member 120 and then drawn out of the substrate processing apparatus 100 through the entrance and exit 112a.

On the other hand, the third body 170 of the top nozzle 166 is provided to supply a cleaning gas for removing the reaction by-products adsorbed on the inner wall of the process chamber 110. The process chamber 110 is contaminated with inner walls by reaction by-products generated as the process proceeds. The reaction by-products are adsorbed on the inner wall of the process chamber 110 and then fall off onto the substrate W to contaminate the substrate W. Therefore, the top nozzle 166 periodically sprays cleaning gas into the process chamber 110 through the third body 170 to etch reaction by-products adsorbed on the inner wall of the process chamber 110. As the cleaning gas used here, nitrogen trifluoride (NF 3) is used.

The cleaning process for removing the reaction by-products deposited on the inner wall of the process chamber 110 may include a third body 170 of the top nozzle 166 inside the process chamber 110 without the substrate W first being introduced. The cleaning gas is supplied to the cleaning gas, and the cleaning gas is spread from the center of the process chamber 110 to the edge (wall surface) while colliding with the rear surface of the second body 169 (illustrated by arrows in FIG. 3). When power is applied to the upper electrode 118 and the lower electrode with respect to the supplied cleaning gas, the cleaning gas is excited in a plasma state and cations are collected on the wall of the process chamber 110 while a speed difference between electrons and ions occurs. As a result, DC voltage is formed on the wall. The cleaning gas forming the DC voltage is removed by reacting with the reaction by-products deposited on the wall.

In the above, the configuration and operation of the substrate processing apparatus according to the present invention have been shown in accordance with the above description and drawings, but this is merely an example, and various changes and modifications can be made without departing from the technical spirit of the present invention. Of course.

As described above, the present invention can uniformly supply the process gas to the center of the substrate.

In addition, the present invention can form a thin film uniformly on a substrate.

Claims (6)

In the substrate processing apparatus: A process chamber providing a space in which a plasma is generated; A support member installed in the process chamber to support a substrate; A gas supply member supplying a process gas to the process chamber; The gas supply member Side nozzles disposed on side surfaces of the process chamber; And a top nozzle installed on an upper surface of the process chamber. The method of claim 1, The top nozzle is A tubular first body having a gas flow path therein; And a second body formed at a lower end of the first body in a disk shape and having a plurality of injection holes connected to the gas flow paths in which process gas is injected. The method of claim 2, The injection hole is a substrate processing apparatus, characterized in that arranged in a predetermined interval and direction from the center to the second body. The method of claim 2, The top nozzle further comprises a tubular third body for supplying a cleaning gas to the process chamber. The method of claim 4, wherein And the third body sprays the cleaning gas toward the rear surface of the second body so that the cleaning gas flows to the inner wall of the process chamber. The method of claim 1, The side nozzles Two first nozzles for injecting the first process gas; And a nozzle comprising one second nozzle for injecting a second process gas at an equal angle with respect to the substrate.
KR1020070118475A 2007-11-20 2007-11-20 Apparatus for treating a substrate KR20090051984A (en)

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011043961A2 (en) * 2009-10-05 2011-04-14 Applied Materials, Inc. Epitaxial chamber with cross flow
CN103597580A (en) * 2011-04-22 2014-02-19 应用材料公司 Apparatus for deposition of materials on a substrate
CN106206225A (en) * 2016-07-29 2016-12-07 上海华力微电子有限公司 Prevent method and high-density plasma machine that tip nozzles ftractures
WO2023239081A1 (en) * 2022-06-09 2023-12-14 주식회사 나이스플라즈마 Plasma chamber having side gas feed for forming swirl motion

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011043961A2 (en) * 2009-10-05 2011-04-14 Applied Materials, Inc. Epitaxial chamber with cross flow
WO2011043961A3 (en) * 2009-10-05 2011-07-14 Applied Materials, Inc. Epitaxial chamber with cross flow
CN102549718A (en) * 2009-10-05 2012-07-04 应用材料公司 Epitaxial chamber with cross flow
US9127360B2 (en) 2009-10-05 2015-09-08 Applied Materials, Inc. Epitaxial chamber with cross flow
CN103597580A (en) * 2011-04-22 2014-02-19 应用材料公司 Apparatus for deposition of materials on a substrate
TWI553150B (en) * 2011-04-22 2016-10-11 應用材料股份有限公司 Apparatus for deposition of materials on a substrate
CN106206225A (en) * 2016-07-29 2016-12-07 上海华力微电子有限公司 Prevent method and high-density plasma machine that tip nozzles ftractures
CN106206225B (en) * 2016-07-29 2018-01-26 上海华力微电子有限公司 Prevent the method and high-density plasma machine that tip nozzles ftracture
WO2023239081A1 (en) * 2022-06-09 2023-12-14 주식회사 나이스플라즈마 Plasma chamber having side gas feed for forming swirl motion

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